Display panel and display device

Abstract

The present application provides a display panel and a display device. Film layer stacking mechanisms with different refractive indexes are arranged to improve the light transmittance, thereby improving the imaging effect of the display panel.

Description

Display panel and display device Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a display panel and a display device. Background Art

[0002] As people pursue a higher visual experience in displays, the screen-to-body ratio of the display area needs to be increased as much as possible. This requires hiding the front-facing camera above the screen under the screen. For the front-facing camera, sufficient light intake is required to ensure good imaging. Therefore, the display panel's camera area must have a sufficiently high transmittance.

[0003] For the area corresponding to the display panel camera, light is prone to interference and reflection at different film layers, causing reflection and interference at the interface when light passes through, resulting in low screen transmittance and affecting the camera's imaging effect. SUMMARY OF THE INVENTION

[0004] Embodiments of the present invention provide a display panel and a display device, aiming to solve the problem of low light transmittance in the display panel area corresponding to the camera in the prior art.

[0005] To solve the above problems, in a first aspect, the present application provides a display panel, comprising:

[0006] The display panel includes a first display area and a second display area, wherein the light transmittance of the first display area is greater than the light transmittance of the second display area;

[0007] The display panel further includes:

[0008] substrate;

[0009] an inorganic insulating layer, disposed on one side of the substrate;

[0010] a pixel driving circuit, disposed in the inorganic insulating layer, the pixel driving circuit comprising a plurality of first pixel driving circuits disposed in the first display area or the second display area, and a plurality of second pixel driving circuits disposed in the second display area;

[0011] an organic insulating layer, disposed on a side of the inorganic insulating layer away from the substrate;

[0012] a light-emitting layer disposed on a side of the organic insulating layer away from the substrate, the light-emitting layer comprising: a plurality of first light-emitting pixels disposed in the first display area, and a plurality of second light-emitting pixels disposed in the second display area, the first pixel driving circuit being electrically connected to the first light-emitting pixels, and the second pixel driving circuit being electrically connected to the second light-emitting pixels;

[0013] The inorganic insulating layer includes a first inorganic insulating sublayer, and the refractive index of the first inorganic insulating sublayer is smaller than the refractive index of the substrate and smaller than the refractive index of the organic insulating layer.

[0014] In some possible embodiments, the inorganic insulating layer further includes:

[0015] The second inorganic insulating sublayer is disposed between the first inorganic insulating sublayer and the organic insulating layer, and the refractive index of the second inorganic insulating sublayer is greater than the refractive index of the first inorganic insulating sublayer.

[0016] In some possible embodiments, the refractive index of the second inorganic insulating sublayer is greater than the refractive index of the substrate and greater than the refractive index of the organic insulating layer.

[0017] In some possible embodiments, the inorganic insulating layer further includes:

[0018] A third inorganic insulating sublayer is provided between the second inorganic insulating sublayer and the organic insulating layer, and a refractive index of the third inorganic insulating sublayer is smaller than the refractive index of the substrate, the refractive index of the second inorganic insulating sublayer, and the refractive index of the organic insulating layer.

[0019] In some possible embodiments, the thickness of the third inorganic insulating sublayer is smaller than the thickness of the first inorganic insulating sublayer.

[0020] In some possible embodiments, the inorganic insulating layer further includes:

[0021] A fourth inorganic insulating sublayer is disposed between the third inorganic insulating sublayer and the organic insulating layer, and a refractive index of the fourth inorganic insulating sublayer is greater than a refractive index of the first inorganic insulating sublayer and a refractive index of the third inorganic insulating sublayer.

[0022] In some possible embodiments, the refractive index of the fourth inorganic insulating sublayer is greater than the refractive index of the substrate and greater than the refractive index of the organic insulating layer.

[0023] In some possible embodiments, the first inorganic insulating sublayer has the same refractive index as the third inorganic insulating sublayer, and the second inorganic insulating sublayer has the same refractive index as the fourth inorganic insulating sublayer.

[0024] In some possible embodiments, the inorganic insulating sublayer further includes a fifth inorganic insulating sublayer, and the fifth inorganic insulating sublayer is disposed between the fourth inorganic insulating sublayer and the organic insulating layer.

[0025] In some possible embodiments, the inorganic insulating sublayer includes: a plurality of alternatingly stacked low-refractive-index inorganic insulating sublayers and high-refractive-index inorganic insulating sublayers, wherein the low-refractive-index inorganic insulating sublayer is disposed close to the substrate, and the refractive index of the high-refractive-index inorganic insulating sublayer is greater than that of the adjacent low-refractive-index inorganic insulating sublayer.

[0026] The thickness of the low-refractive-index inorganic insulating sublayer satisfies the following formula: d=(2k-1)λ / (4n),

[0027] Wherein, k is a positive integer, and the k value is determined according to the number of low-refractive-index inorganic insulating sublayers along the direction from the organic insulating layer to the substrate; λ is the wavelength of light, and n is the refractive index.

[0028] In a second aspect, an embodiment of the present application further provides a device, wherein the display device includes the display device including a sensor and a display panel, wherein the display panel includes a first display area and a second display area, and the transmittance of the first display area is greater than the transmittance of the second display area;

[0029] The display panel further includes:

[0030] substrate;

[0031] an inorganic insulating layer, disposed on one side of the substrate;

[0032] a pixel driving circuit, disposed in the inorganic insulating layer, the pixel driving circuit comprising a plurality of first pixel driving circuits disposed in the first display area or the second display area, and a plurality of second pixel driving circuits disposed in the second display area;

[0033] an organic insulating layer, disposed on a side of the inorganic insulating layer away from the substrate;

[0034] a light-emitting layer disposed on a side of the organic insulating layer away from the substrate, the light-emitting layer comprising: a plurality of first light-emitting pixels disposed in the first display area, and a plurality of second light-emitting pixels disposed in the second display area, the first pixel driving circuit being electrically connected to the first light-emitting pixels, and the second pixel driving circuit being electrically connected to the second light-emitting pixels;

[0035] The inorganic insulating layer includes a first inorganic insulating sublayer, and the refractive index of the first inorganic insulating sublayer is smaller than the refractive index of the substrate and smaller than the refractive index of the organic insulating layer;

[0036] The sensor is arranged corresponding to the first display area of ​​the display panel.

[0037] In some possible embodiments, the inorganic insulating layer further includes:

[0038] The second inorganic insulating sublayer is disposed between the first inorganic insulating sublayer and the organic insulating layer, and the refractive index of the second inorganic insulating sublayer is greater than the refractive index of the first inorganic insulating sublayer.

[0039] In some possible embodiments, the refractive index of the second inorganic insulating sublayer is greater than the refractive index of the substrate and greater than the refractive index of the organic insulating layer.

[0040] In some possible embodiments, the inorganic insulating layer further includes:

[0041] A third inorganic insulating sublayer is provided between the second inorganic insulating sublayer and the organic insulating layer, and a refractive index of the third inorganic insulating sublayer is smaller than the refractive index of the substrate, the refractive index of the second inorganic insulating sublayer, and the refractive index of the organic insulating layer.

[0042] In some possible embodiments, the thickness of the third inorganic insulating sublayer is smaller than the thickness of the first inorganic insulating sublayer.

[0043] In some possible embodiments, the inorganic insulating layer further includes:

[0044] A fourth inorganic insulating sublayer is disposed between the third inorganic insulating sublayer and the organic insulating layer, and a refractive index of the fourth inorganic insulating sublayer is greater than a refractive index of the first inorganic insulating sublayer and a refractive index of the third inorganic insulating sublayer.

[0045] In some possible embodiments, the refractive index of the fourth inorganic insulating sublayer is greater than the refractive index of the substrate and greater than the refractive index of the organic insulating layer.

[0046] In some possible embodiments, the first inorganic insulating sublayer has the same refractive index as the third inorganic insulating sublayer, and the second inorganic insulating sublayer has the same refractive index as the fourth inorganic insulating sublayer.

[0047] In some possible embodiments, the inorganic insulating sublayer further includes a fifth inorganic insulating sublayer, and the fifth inorganic insulating sublayer is disposed between the fourth inorganic insulating sublayer and the organic insulating layer.

[0048] In some possible embodiments, the inorganic insulating sublayer includes: a plurality of alternatingly stacked low-refractive-index inorganic insulating sublayers and high-refractive-index inorganic insulating sublayers, wherein the low-refractive-index inorganic insulating sublayer is disposed close to the substrate, and the refractive index of the high-refractive-index inorganic insulating sublayer is greater than that of the adjacent low-refractive-index inorganic insulating sublayer.

[0049] The thickness of the low-refractive-index inorganic insulating sublayer satisfies the following formula: d=(2k-1)λ / (4n),

[0050] Wherein, k is a positive integer, and the k value is determined according to the number of low-refractive-index inorganic insulating sublayers along the direction from the organic insulating layer to the substrate; λ is the wavelength of light, and n is the refractive index.

[0051] The present application provides a display panel and a display device. The display panel includes a first display area and a second display area, wherein the first display area has a greater light transmittance than the second display area. The display panel also includes a stacked substrate, an inorganic insulating layer, an organic insulating layer, and a light-emitting layer. The inorganic insulating layer includes a first inorganic insulating sublayer, wherein the refractive index of the first inorganic insulating sublayer is less than that of the substrate and less than that of the organic insulating layer. The present application improves light transmittance and, thereby, the imaging effect of the display panel by providing a stacked structure of film layers with different refractive indices. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0053] FIG1 is a cross-sectional view of a display panel according to an embodiment of the present application;

[0054] FIG2 is a schematic structural diagram of another embodiment of a display panel provided in an embodiment of the present application;

[0055] FIG3 is a schematic structural diagram of another embodiment of a display panel provided in an embodiment of the present application;

[0056] FIG4 is a schematic structural diagram of another embodiment of a display panel provided in an embodiment of the present application;

[0057] FIG5 is a schematic structural diagram of another embodiment of a display panel provided in an embodiment of the present application;

[0058] FIG6 is a schematic structural diagram of another embodiment of a display panel provided in an embodiment of the present application;

[0059] FIG7 is a schematic structural diagram of another embodiment of a display panel provided in an embodiment of the present application;

[0060] FIG8 is a cross-sectional view of another embodiment of a display panel provided in an embodiment of the present application;

[0061] FIG9 is a schematic structural diagram of another embodiment of a display panel provided in an embodiment of the present application;

[0062] FIG10 is a cross-sectional view of another embodiment of a display panel provided in an embodiment of the present application;

[0063] FIG11 is a schematic structural diagram of another embodiment of a display panel provided in an embodiment of the present application;

[0064] FIG12 is a cross-sectional view of another embodiment of a display panel provided in an embodiment of the present application. Modes for Carrying Out the Invention

[0065] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making any creative efforts shall fall within the scope of protection of the present invention.

[0066] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the said features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0067] In this application, the word "exemplary" is used to mean "serving as an example, illustration, or illustration." Any embodiment described in this application as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is given to enable any person skilled in the art to make and use the invention. In the following description, details are listed for the purpose of explanation. It should be understood that one of ordinary skill in the art will recognize that the invention can be practiced without these specific details. In other instances, well-known structures and processes are not described in detail to avoid obscuring the description of the invention with unnecessary detail. Therefore, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.

[0068] Embodiments of the present invention provide a display panel and a display device, which are described in detail below.

[0069] As shown in Figure 1, it is a cross-sectional view of an embodiment of a display panel provided in an embodiment of the present application. In Figure 1, the display panel includes a first display area and a second display area, and the transmittance of the first display area is greater than that of the second display area. In a specific embodiment, the first display area and the second display area can correspond to the under-screen camera area in the display panel, and the under-screen camera area is the area corresponding to the under-screen camera, and the under-screen camera area is divided into a light-transmitting area and a light-shielding area. Among them, the light-shielding area is mainly the area corresponding to the thin-film transistor in the display panel, which is the second display area, and the light-transmitting area has no thin-film transistor, which is the first display area; light mainly passes through the light-transmitting area to enter the under-screen camera. The present application is mainly to increase the light transmittance of the light-transmitting area, that is, the first display area.

[0070] In Figure 1, the display panel further includes: a substrate 10, an inorganic insulating layer 20, a pixel driving circuit, an organic insulating layer 30, and a light-emitting layer 40. The inorganic insulating layer 20 is disposed on one side of the substrate 10; the pixel driving circuit is disposed in the inorganic insulating layer 20, and the pixel driving circuit includes a plurality of first pixel driving circuits disposed in the first display area or the second display area, and a plurality of second pixel driving circuits disposed in the second display area. The organic insulating layer 30 is disposed on the side of the inorganic insulating layer 20 away from the substrate 10; the light-emitting layer 40 is disposed on the side of the organic insulating layer 30 away from the substrate 10, and the light-emitting layer 40 includes a plurality of first light-emitting pixels disposed in the first display area, and a plurality of second light-emitting pixels disposed in the second display area. The first pixel driving circuit is electrically connected to the first light-emitting pixels, and the second pixel driving circuit is electrically connected to the second light-emitting pixels.

[0071] In the above embodiment, the inorganic insulating layer 20 includes a first inorganic insulating sublayer 201, whose refractive index is lower than that of the substrate and lower than that of the organic insulating layer. This results in a structure where the substrate 10, inorganic insulating layer 20, and organic insulating layer 30, stacked together in the display panel, each have a different refractive index. By designing adjacent low-refractive index and high-refractive index film layers, the low-refractive index film layer acts as an antireflection film for the high-refractive index film layer, thereby improving light transmittance and effectively increasing the screen transmittance in the under-screen camera area.

[0072] In other embodiments, the inorganic insulating layer 20 may further include a second inorganic insulating sublayer 202. FIG. 2 shows a schematic structural diagram of another embodiment of a display panel provided by an embodiment of the present application. In FIG. 2 , the second inorganic insulating sublayer 202 is disposed between the first inorganic insulating sublayer 201 and the organic insulating layer 30, and the refractive index of the second inorganic insulating sublayer 202 is greater than that of the first inorganic insulating sublayer 201. Furthermore, the refractive index of the second inorganic insulating sublayer 202 is greater than that of the substrate 10 and also greater than that of the organic insulating layer 30.

[0073] 2 , the inorganic insulating layer 20 may further include a third inorganic insulating sublayer 203, which is disposed between the second inorganic insulating sublayer 202 and the organic insulating layer 30. The refractive index of the third inorganic insulating sublayer 203 is lower than that of the substrate 10, lower than that of the second inorganic insulating sublayer 202, and lower than that of the organic insulating layer 30.

[0074] FIG3 is a schematic diagram of the structure of another embodiment of a display panel provided by an embodiment of the present application. In the embodiment shown in FIG3 , the inorganic insulating layer 20 further includes a fourth inorganic insulating sublayer 204 disposed between the third inorganic insulating sublayer 203 and the organic insulating layer 30. The refractive index of the fourth inorganic insulating sublayer 204 is greater than the refractive index of the first inorganic insulating sublayer 201 and the refractive index of the third inorganic insulating sublayer 203. Furthermore, the refractive index of the fourth inorganic insulating sublayer 204 is greater than the refractive index of the substrate 10 and also greater than the refractive index of the organic insulating layer 30.

[0075] Continuing with FIG3 , the inorganic insulating layer 20 further includes a fifth inorganic insulating sublayer 205 disposed between the fourth inorganic insulating sublayer 204 and the organic insulating layer 30. The refractive index of the fifth inorganic insulating sublayer 205 is lower than that of the substrate 10 and the organic insulating layer 30. The refractive index of the fifth inorganic insulating sublayer 205 is also lower than that of the fourth insulating sublayer 204.

[0076] FIG4 is a schematic diagram of another embodiment of the display panel according to an embodiment of the present application. In FIG4 , the inorganic insulating sublayer may further include a sixth inorganic insulating layer 206 disposed between the fifth inorganic insulating sublayer 205 and the organic insulating layer 30 .

[0077] In the above embodiment, the refractive index of the first inorganic insulating sublayer 201, the third inorganic insulating sublayer 203, and the fifth inorganic insulating sublayer can be within the same refractive index range; in a specific embodiment, the refractive index of the three can be the same. The refractive index of the second inorganic insulating sublayer 202, the fourth inorganic insulating sublayer 204, and the sixth inorganic insulating sublayer 206 can also be within the same refractive index range; in a specific embodiment, the refractive index of the three can be the same. In the present application, the first inorganic insulating sublayer 201, the third inorganic insulating sublayer 203, and the fifth inorganic insulating sublayer can be made of the same material, for example, silicon oxide. The refractive index of the second inorganic insulating sublayer 202, the fourth inorganic insulating sublayer 204, and the sixth inorganic insulating sublayer 206 can be made of the same material, for example, silicon oxide.

[0078] In the above embodiment, although the materials used to prepare the different inorganic insulating sublayers may be the same, the thicknesses of the different inorganic insulating sublayers are usually different. Specifically, the thickness of the third inorganic insulating sublayer is usually less than that of the first inorganic insulating sublayer.

[0079] It should be noted that in the embodiment of the present application, the process of preparing the multiple inorganic insulating sub-layers in the inorganic insulating layer 20 is actually to utilize the existing functional film layers in the display panel, and no additional processes are required. For example, the inorganic insulating layer is the gate insulating layer, planarization layer, and other structures in the display panel. The actual structure of the display panel is described below:

[0080] FIG5 is a schematic diagram of the structure of a display panel according to an embodiment of the present application. In FIG5 , the display panel further comprises a stacked base layer 101, multiple barrier layers 102, and a buffer layer 103; an active layer 104 disposed above the buffer layer 103; a first insulating layer 105 disposed above and completely covering the active layer 104; a first gate layer 106 disposed above the first insulating layer 105; a second insulating layer 107 disposed above and completely covering the first gate layer 106; and a second gate layer 108 disposed above the second insulating layer 107. The display panel further comprises a first interlayer dielectric layer 109 disposed above the second gate layer 108; an oxide semiconductor layer 100 is further disposed above the first interlayer dielectric layer 109; and a third insulating layer 110 is further formed above the oxide semiconductor layer 100, completely covering the oxide semiconductor layer 100. A third gate layer 120 is also formed above the third insulating layer 110 at a position corresponding to the oxide semiconductor layer 100; a second interlayer dielectric layer 130 is formed above the third gate layer 120, completely covering the third gate layer 120. In Figure 5 , vias are also formed to form the source and drain layers of the two thin-film transistors, respectively; and a planarization layer 140 is also formed above the two source and drain layers, completely covering the source and drain layers and the second interlayer dielectric layer 130, to planarize the top surface of the display panel.

[0081] FIG6 is a schematic diagram of another embodiment of the display panel structure provided by an embodiment of the present application. In the embodiment shown in FIG6 , the display panel includes a stacked base layer 101, an inorganic insulating layer, and a planarization layer 140. The embodiment shown in FIG6 is a simplified schematic diagram of the display panel structure. The technical solution of the present application will be described below in conjunction with FIG5 and FIG6 .

[0082] Figure 5 simplifies the display panel structure shown in Figure 6, resulting in a display panel comprising a stacked base layer 101, an inorganic insulating layer, and a planarization layer 140. Base layer 101 is equivalent to substrate 10 in Figures 1-4, and planarization layer 140 is similar to the organic insulating layer in Figures 1-4. Between the base layer 101 and the planarization layer 140 is the inorganic insulating layer and the pixel driving circuit disposed therebetween. Therefore, the inorganic insulating layer in this application includes the multilayer structure of the multilayer barrier layer 20, buffer layer 103, first gate layer 40, etc. in Figure 1. The details are as follows:

[0083] In some embodiments of the present application, the inorganic insulating layer may be a multi-layer structure, and the inorganic insulating layer may specifically include a cross-stacked silicon nitride layer and a silicon oxide layer. Taking the embodiment shown in FIG6 as an example, the inorganic insulating layer may include: a first silicon oxide layer 301, a first silicon nitride layer 302, a second silicon oxide layer 303, a second silicon nitride layer 304, a third silicon oxide layer 305, and a third silicon nitride layer 306 stacked from bottom to top; the first silicon oxide layer is disposed above the base layer 101 and in direct contact with the base layer 101, and the planarization layer is disposed above the third silicon nitride layer 306. The multiple silicon oxide layers and silicon nitride layers stacked here are similar to the multiple inorganic insulating sub-layers in FIG1-4.

[0084] In the embodiment shown in Figure 6, the multiple film layers between the base layer 101 and the first planarization layer in Figure 5 are divided into multiple cross-stacked silicon nitride layers and multiple silicon oxide layers, depending on the different preparation materials. Specifically, taking the multiple barrier layers 102 located above and in direct contact with the base layer 101 as an example, the materials for preparing the multiple barrier layers 102 are typically silicon dioxide (SiO2) and silicon nitride (SiNx), while the materials for preparing the buffer layer 103 located above the multiple barrier layers 102 also include silicon dioxide and silicon nitride. Furthermore, when preparing the multiple barrier layers 102, the silicon nitride is formed on top of the silicon dioxide; when preparing the buffer layer 103, the silicon dioxide is formed on top of the silicon nitride. At this time, the silicon nitride in the multiple barrier layer 102 and the silicon nitride in the buffer layer 103 are in direct contact, so the silicon nitride in the multiple barrier layer 102 and the silicon nitride in the buffer layer 103 can be regarded as the same layer structure to obtain the first silicon nitride layer 302; at this time, the film layer is re-divided according to the preparation material of the film layer.

[0085] Since the insulating layer, interlayer dielectric layer, etc. in this application are all made of silicon oxide and silicon nitride materials, the other film layers except the active layer, gate layer, and oxide semiconductor layer can be divided twice to obtain the aforementioned first silicon oxide layer 301, first silicon nitride layer 302, second silicon oxide layer 303, second silicon nitride layer 304, third silicon oxide layer 305 and third silicon nitride layer 306.

[0086] In the embodiments shown in Figures 5 and 6, the first silicon oxide layer 301 is actually only a portion of the multiple barrier layers 102, while the first silicon nitride layer includes a portion of the multiple barrier layers 102 and a portion of the buffer layer 103. That is, in the embodiments of the present application, both the silicon oxide layer and the silicon nitride layer can include only a portion of the aforementioned film structure, such as the multiple barrier layers 102, the buffer layer 103, the insulating layer, and the interlayer dielectric layer, or portions of each of the two film layers can be reconstituted into a silicon nitride layer or a silicon oxide layer. The present application primarily adjusts the light transmittance of the light-transmitting region by varying the refractive index and thickness of the silicon nitride layer and the silicon oxide layer.

[0087] Specifically, in this application, the refractive index of the silicon nitride layer is greater than that of the silicon oxide layer, and the silicon oxide layer with a lower refractive index is disposed above the silicon nitride layer with a higher refractive index. The silicon oxide layer with a lower refractive index can act as an antireflection film, reducing the reflection of light when passing through different media while also enhancing the transmittance of light through interference. In the embodiment shown in Figure 5, the first silicon oxide layer is disposed above the substrate layer, and the refractive index of the silicon oxide layer (including the first silicon oxide layer) is less than that of the substrate layer. This arrangement means that the film layer with a lower refractive index is located above the film layer with a higher refractive index, which can enhance the transmittance of light.

[0088] For the first silicon nitride layer 302, the second silicon oxide layer 303, the second silicon nitride layer 304, and the third silicon oxide layer 305, in Figure 5, the silicon oxide layer with a lower refractive index is located above the silicon nitride layer with a higher refractive index. Different silicon oxide layers can also increase the transmittance of light. For the third silicon nitride layer, the refractive index of the third silicon nitride layer is greater than that of the planarization layer, which can also improve the transmittance of light. The following table shows the refractive index range of the film layer in the embodiment shown in Figure 5:

[0089] Refractive index of film layer: base layer 1.45-1.65, first silicon oxide layer 1.38-1.48, first silicon nitride layer 1.70-1.97, second silicon oxide layer 1.38-1.48, second silicon nitride layer 1.70-1.97, third silicon oxide layer 1.38-1.48, third silicon nitride layer 1.70-1.97, planarization layer 1.50-1.70

[0090] As can be seen from the table above, in the present application, the refractive index of the silicon oxide layer is less than that of the base layer, and even if the silicon oxide layer includes multiple different silicon oxide layers such as a first silicon oxide layer, a second silicon oxide layer, and a third silicon oxide layer, the refractive index range of these silicon oxide layers is the same. Similarly, for the silicon nitride layer, even if the silicon nitride layer includes multiple different silicon nitride layers such as a first silicon nitride layer, a second silicon nitride layer, and a third silicon nitride layer, the refractive index range of these silicon nitride layers is the same.

[0091] It should be noted that while the refractive index ranges for the base layer and the silicon oxide layer overlap to some extent, in actual display panel manufacturing, the base layer's refractive index is typically set to be greater than that of the silicon oxide layer; that is, the refractive indices of the first, third, and fifth inorganic insulator sublayers are greater than or less than that of the substrate. For example, when the refractive index of the silicon oxide layer (including the first, third, and fifth inorganic insulator sublayers) is set to 1.48, the refractive index of the substrate (i.e., the base layer) needs to be within the range of 1.48-1.65, rather than 1.45-1.65. In the table above, the silicon nitride layer, which has a greater refractive index than the silicon oxide layer, can include: a second inorganic insulator sublayer, a fourth inorganic insulator layer, and a sixth insulator layer, with the silicon oxide and silicon nitride layers alternately stacked, with the silicon oxide layer positioned closer to the base layer.

[0092] While adjusting the refractive index of different film layers, it's also necessary to adjust their thickness accordingly. This combination of refractive index and thickness is crucial for increasing light transmittance. Specifically, the inorganic insulator layer comprises a plurality of alternating low-refractive-index inorganic insulator layers (i.e., silicon oxide layers) and high-refractive-index inorganic insulator layers (i.e., silicon nitride layers). The low-refractive-index inorganic insulator layers are positioned closer to the substrate, and the high-refractive-index inorganic insulator layers have a greater refractive index than the adjacent low-refractive-index inorganic insulator layers. The film thickness of the low-refractive-index inorganic insulating sublayer (i.e., silicon oxide layer) in the present application satisfies: d=(2k-1)λ / (4n); wherein, k is a positive integer, and the k value is determined according to the number of low-refractive-index inorganic insulating sublayers along the direction from the organic insulating layer to the substrate (for example, in the above table of the present application, the silicon oxide layer includes a first inorganic insulating sublayer, a third inorganic insulating sublayer, and a fifth insulating sublayer, then the k value of the fifth insulating sublayer is 1, the k value of the third inorganic sublayer is 2, and the k value of the first inorganic sublayer is 3); λ is the wavelength of light, which can be 380~780nm, and n is the refractive index of each inorganic insulating sublayer.

[0093] In a specific embodiment, the value of λ may be 550 nm. In this case, the thickness of the silicon oxide layer (including the first inorganic insulating sublayer, the third inorganic insulating sublayer, and the fifth insulating sublayer) satisfies:

[0094] 929(2k-1)Å-955(2k-1)Å, k is a positive integer, and Å is a unit of length, 1 Å is 0.1nm.

[0095] However, since the silicon oxide layer and silicon nitride layer in this application can actually be part of the functional layer in Figure 1, or a combination of parts of both functional layers, the thicknesses of the different silicon oxide layers in Figure 5 vary, as do the thicknesses of the different silicon nitride layers. Although the thicknesses of the different silicon oxide layers all fall within the range of 929(2k-1)Å to 955(2k-1)Å, the actual thicknesses of the different silicon oxide layers vary.

[0096] Taking the display panel shown in FIG5 as an example, the first silicon oxide layer comprises a portion of the multi-barrier layer 102, and the thickness of the first silicon oxide layer may be 650-695 nm. The second silicon oxide layer may comprise a portion of the buffer layer and a portion of the first insulating layer, and the thickness of the second silicon oxide layer may be 465-495 nm. The third silicon oxide layer may comprise a portion of the first interlayer dielectric layer, the third insulating layer, and a portion of the second interlayer dielectric layer, and the thickness of the third silicon oxide layer may be 275-295 nm.

[0097] For the silicon nitride layer, the first silicon nitride layer includes a portion of the multiple barrier layer 102 and a portion of the buffer layer 103; the thickness of the first silicon nitride layer can specifically be in the range of 0-100 nm. The second silicon nitride layer can include a portion of the second insulating layer and a portion of the first interlayer dielectric layer; the thickness of the second silicon nitride layer can be in the range of 0-280 nm. The third silicon nitride layer can include a portion of the second interlayer dielectric layer, and the thickness of the third silicon nitride layer can be in the range of 0-200 nm. The overall thickness of the planarization layer or organic insulating layer can be in the range of 7-8 μm; and the overall thickness of the base layer or substrate can be in the range of 12-16 μm.

[0098] As shown in Figure 7, a schematic diagram of the structure of another embodiment of the display panel provided in an embodiment of the present application is shown; and Figure 8 is a cross-sectional view of another embodiment of the display panel provided in an embodiment of the present application. Referring to Figures 7 and 8, the display panel at this time also includes a base layer 101 and a planarization layer, and the inorganic insulating layer at this time is also a multi-layer structure including multiple silicon oxide layers and multiple silicon nitride layers. However, unlike the embodiment shown in Figure 5, the inorganic insulating layer at this time includes a first silicon oxide layer, a first silicon nitride layer, a second silicon oxide layer, a second silicon nitride layer, and a third silicon oxide layer stacked from bottom to top; the first silicon oxide layer is also arranged above the base layer and in direct contact with the base layer 101.

[0099] In the embodiments shown in Figures 7 and 8, there is no third silicon nitride layer. Instead, based on the embodiments shown in Figures 5 and 6, a hole-digging operation is performed to remove the third silicon nitride layer and part of the third silicon oxide layer, forming a via in the light-transmitting area; and the bottom of the via is located above the third silicon oxide layer and is in contact with the upper surface of the third silicon oxide layer. For the structures shown in Figures 7 and 8, the second interlayer dielectric layer and part of the third insulating layer located in the light-transmitting area are removed. At this time, the bottom of the via is located inside the third insulating layer. After the via is formed, it is necessary to fill the via to ensure the safety and flatness of the entire display panel. In the present application, the material of the planarization layer (i.e., the organic insulating layer) can be filled in the via. In this case, the planarization layer located above the third silicon oxide layer includes the portion in the filled via.

[0100] At this point, the planarization layer fills the vias. Because the third silicon oxide layer and a portion of it have been removed, the thickness of the third silicon oxide layer in Figure 8 is reduced. Specifically, the thickness of the third silicon oxide layer in Figure 8 remains within the range of 929(2k-1)Å to 955(2k-1)Å, but can be 275nm to 295nm.

[0101] In the above embodiment, although the third silicon nitride layer and part of the third silicon oxide layer are removed, the first silicon oxide layer, the first silicon nitride layer, the second silicon oxide layer, the second silicon nitride layer and part of the third silicon oxide layer still exist; therefore, the light transmittance of the light-transmitting area can still be increased by changing the refractive index and thickness of the film layer. It should be noted that the third oxide layer in the embodiments of Figures 7 and 8 is removed by a certain thickness, so the thickness is less than the thickness of the third oxide layer in the embodiments of Figures 5 and 6; in this embodiment, the thickness of the third oxide layer can be 275-295nm. The overall thickness of the planarization layer or the organic insulating layer can be in the range of 7-8um; and the overall thickness of the base layer or the substrate can be in the range of 12-16um.

[0102] Figure 9 shows a schematic diagram of the structure of another embodiment of a display panel provided by an embodiment of the present application. Figure 10 shows a cross-sectional view of another embodiment of a display panel provided by an embodiment of the present application. In the embodiments shown in Figures 9 and 10, the inorganic insulating layer also has a multi-layer structure; the silicon oxide layer in this case includes a first silicon oxide layer and a second silicon oxide layer, and the silicon nitride layer includes a first silicon nitride layer. The inorganic insulating layer in this case includes a first silicon oxide layer, a first silicon nitride layer, and a second silicon oxide layer stacked from bottom to top.

[0103] In the embodiments shown in Figures 9 and 10 , a via is also formed in the light-transmitting area of ​​the display panel. In this case, the bottom of the via is located above the second silicon oxide layer and aligns with the upper surface of the second silicon oxide layer. The planarization layer also includes a portion that fills the via. In the structures shown in Figures 9 and 10 , the second interlayer dielectric layer, the third insulating layer, the first interlayer dielectric layer, the second insulating layer, and a portion of the first insulating layer located in the light-transmitting area have been removed. The bottom of the via is now located within the first insulating layer.

[0104] Unlike the embodiments of Figures 7 and 8 , the via depth in Figures 9 and 10 is greater than the via depth in the embodiments of Figures 7 and 8 ; in the embodiments of Figures 7 and 8 , not only the entire third silicon nitride layer and the entire third silicon oxide layer are removed, but also the entire second silicon nitride layer and a portion of the second silicon oxide layer are removed. Therefore, the thickness of the second silicon oxide layer in Figures 9 and 10 is less than the thickness of the second silicon oxide layer in the embodiments of Figures 7 and 8 . In the structure shown in Figure 9 , the second interlayer dielectric layer, the third insulating layer, the first interlayer dielectric layer, the second insulating layer, and a portion of the first insulating layer located in the light-transmitting area are removed. Specifically, the thickness of the second silicon oxide layer in the embodiments of Figures 9 and 10 ranges from 275 to 295 nm.

[0105] As shown in Figure 11, it is a schematic structural diagram of another embodiment of the display panel provided by the embodiment of the present application. Figure 12 is a cross-sectional view of another embodiment of the display panel provided by the embodiment of the present application. In the embodiments shown in Figures 11 and 12, the inorganic insulating layer is a single-layer structure, that is, the inorganic insulating layer includes only one layer, which is a first silicon oxide layer. At this time, the refractive index of the inorganic insulating layer is less than the refractive index of the base layer 101. When the inorganic insulating layer includes an overlapping silicon oxide layer and a silicon nitride layer, the refractive index of the inorganic insulating layer as a whole has nothing to do with the refractive index of the base layer; rather, the refractive index of the silicon oxide layer in the inorganic insulating layer is less than the refractive index of the silicon nitride layer.

[0106] In the embodiment shown in Figures 11 and 12, the inorganic insulating layer includes a first silicon oxide layer, and a via is also formed in the light-transmitting area of ​​the display panel, and the bottom of the via is located on the upper surface of the first silicon oxide layer; and the planarization layer is filled in the via. In the structure shown in Figure 11, the bottom of the via is located inside the multiple barrier layer 102. Unlike the aforementioned embodiment, the embodiment of Figures 11 and 12 removes the first silicon nitride layer, the second silicon oxide layer, the second silicon nitride layer, the third silicon oxide, the third silicon nitride layer and part of the first silicon oxide layer. In the embodiment shown in Figures 11 and 12, the thickness of the first silicon oxide layer is less than the thickness of the first silicon oxide layer in the aforementioned embodiment. Specifically, the film thickness of the first silicon oxide layer is in the range of 280-295nm.

[0107] In the above embodiment, regardless of whether the inorganic insulating layer is a single-layer or multi-layer structure, the thickness of the silicon oxide layer within the inorganic insulating layer satisfies the following conditions: 929(2k-1)Å to 955(2k-1)Å. However, during the hole-digging operation, the portion of the silicon oxide layer located in the light-transmitting area is removed, so the actual thickness of the different silicon oxide layers may vary. The thickness of the silicon nitride layer varies and can be set based on actual conditions.

[0108] In terms of refractive index, the refractive index of the silicon nitride layer is greater than that of the silicon oxide layer. When the inorganic insulating layer only includes the first silicon oxide layer, the refractive index of the inorganic insulating layer (i.e., the first silicon oxide layer) is less than the refractive index of the base layer 101. The refractive index of the planarization layer can be in the range of 1.45-1.65; the refractive index of the base layer can be in the range of 1.50-1.70. When actually preparing a display panel, the refractive index of the planarization layer and the base layer is usually controlled to be greater than 1.6. In this application, the base layer 101 and the planarization layer are both transparent film layers made of organic materials to improve the transmittance of light.

[0109] It should be noted that the division of silicon oxide layers and silicon nitride layers in this application is mainly based on the preparation materials, while the gate insulation layer, planarization layer, etc. are divided according to their actual functions. There is a certain overlap between the silicon oxide layer, silicon nitride layer, insulation layer, interlayer dielectric layer and other functional layers in this application. In addition, the openings in this application are all for the light-transmitting area in the under-screen camera area, and no openings are made in the image display area of ​​the display panel.

[0110] It should be noted that the above display panel embodiment only describes the above structure. It can be understood that, in addition to the above structure, the display panel of the embodiment of the present invention may also include any other necessary structures as needed, such as a cathode layer, a pixel definition layer, etc., which are not specifically limited here.

[0111] The present application also provides a display device, which includes a display panel as described in any one of the above items; the specific structure of the display panel can refer to the above content and will not be repeated here.

[0112] In the above embodiments, the description of each embodiment has its own focus. For parts that are not described in detail in a certain embodiment, please refer to the detailed description of other embodiments above and will not be repeated here.

[0113] In specific implementation, the above units or structures can be implemented as independent entities, or can be arbitrarily combined to implement as the same or several entities. The specific implementation of the above units or structures can refer to the previous method embodiments and will not be repeated here.

[0114] The above is a detailed introduction to a display panel and a display device provided by an embodiment of the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there may be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A display panel, wherein: The display panel comprises a first display area and a second display area, and the light transmittance of the first display area is greater than the light transmittance of the second display area; The display panel further includes: substrate; An inorganic insulating layer, disposed on one side of the substrate; A pixel driving circuit is arranged in the inorganic insulating layer, wherein the pixel driving circuit includes a plurality of first pixel driving circuits arranged in the first display area or the second display area, and a plurality of second pixel driving circuits arranged in the second display area; An organic insulating layer, disposed on a side of the inorganic insulating layer away from the substrate; a light-emitting layer, arranged on a side of the organic insulating layer away from the substrate, the light-emitting layer comprising: a plurality of first light-emitting pixels arranged in the first display area, and a plurality of second light-emitting pixels arranged in the second display area, the first pixel driving circuit being electrically connected to the first light-emitting pixels, and the second pixel driving circuit being electrically connected to the second light-emitting pixels; The inorganic insulating layer includes a first inorganic insulating sublayer, and the refractive index of the first inorganic insulating sublayer is smaller than the refractive index of the substrate and smaller than the refractive index of the organic insulating layer.

2. The display panel according to claim 1, wherein: The inorganic insulating layer further comprises: The second inorganic insulating sublayer is disposed between the first inorganic insulating sublayer and the organic insulating layer, and the refractive index of the second inorganic insulating sublayer is greater than the refractive index of the first inorganic insulating sublayer.

3. The display panel according to claim 2, wherein: The refractive index of the second inorganic insulating sublayer is greater than the refractive index of the substrate and greater than the refractive index of the organic insulating layer.

4. The display panel according to claim 2, wherein: The inorganic insulating layer further comprises: The third inorganic insulating sublayer is disposed between the second inorganic insulating sublayer and the organic insulating layer, and the refractive index of the third inorganic insulating sublayer is smaller than the refractive index of the substrate, the refractive index of the second inorganic insulating sublayer, and the refractive index of the organic insulating layer.

5. The display panel according to claim 4, wherein: The thickness of the third inorganic insulating sublayer is smaller than the thickness of the first inorganic insulating sublayer.

6. The display panel according to claim 4, wherein: The inorganic insulating layer further comprises: The fourth inorganic insulating sublayer is disposed between the third inorganic insulating sublayer and the organic insulating layer, and the refractive index of the fourth inorganic insulating sublayer is greater than the refractive index of the first inorganic insulating sublayer and the refractive index of the third inorganic insulating sublayer.

7. The display panel according to claim 6, wherein: The refractive index of the fourth inorganic insulating sublayer is greater than the refractive index of the substrate and greater than the refractive index of the organic insulating layer.

8. The display panel according to claim 6, wherein: The first inorganic insulating sublayer has the same refractive index as the third inorganic insulating sublayer, and the second inorganic insulating sublayer has the same refractive index as the fourth inorganic insulating sublayer.

9. The display panel according to claim 1, wherein: The inorganic insulating sublayer further includes a fifth inorganic insulating sublayer, and the fifth inorganic insulating sublayer is disposed between the fourth inorganic insulating sublayer and the organic insulating layer.

10. The display panel according to claim 1, wherein: The inorganic insulating sublayer comprises: a plurality of alternately stacked low-refractive-index inorganic insulating sublayers and high-refractive-index inorganic insulating sublayers, wherein the low-refractive-index inorganic insulating sublayer is arranged close to the substrate, and the refractive index of the high-refractive-index inorganic insulating sublayer is greater than that of the adjacent low-refractive-index inorganic insulating sublayer. The thickness of the low-refractive-index inorganic insulating sublayer satisfies the following formula: d=(2k-1)λ / (4n), Wherein, k is a positive integer, and the k value is determined according to the number of low-refractive-index inorganic insulating sublayers along the direction from the organic insulating layer to the substrate; λ is the wavelength of light, and n is the refractive index.

11. A display device, wherein: The display device comprises a sensor and a display panel, the display panel comprises a first display area and a second display area, the light transmittance of the first display area is greater than the light transmittance of the second display area; The display panel further includes: substrate; An inorganic insulating layer, disposed on one side of the substrate; A pixel driving circuit is arranged in the inorganic insulating layer, wherein the pixel driving circuit includes a plurality of first pixel driving circuits arranged in the first display area or the second display area, and a plurality of second pixel driving circuits arranged in the second display area; An organic insulating layer, disposed on a side of the inorganic insulating layer away from the substrate; a light-emitting layer, arranged on a side of the organic insulating layer away from the substrate, the light-emitting layer comprising: a plurality of first light-emitting pixels arranged in the first display area, and a plurality of second light-emitting pixels arranged in the second display area, the first pixel driving circuit being electrically connected to the first light-emitting pixels, and the second pixel driving circuit being electrically connected to the second light-emitting pixels; The inorganic insulating layer includes a first inorganic insulating sublayer, and the refractive index of the first inorganic insulating sublayer is smaller than the refractive index of the substrate and smaller than the refractive index of the organic insulating layer; The sensor is arranged corresponding to the first display area in the display panel.

12. The display panel according to claim 11, wherein: The inorganic insulating layer further comprises: The second inorganic insulating sublayer is disposed between the first inorganic insulating sublayer and the organic insulating layer, and the refractive index of the second inorganic insulating sublayer is greater than the refractive index of the first inorganic insulating sublayer.

13. The display panel according to claim 12, wherein: The refractive index of the second inorganic insulating sublayer is greater than the refractive index of the substrate and greater than the refractive index of the organic insulating layer.

14. The display panel according to claim 12, wherein: The inorganic insulating layer further comprises: The third inorganic insulating sublayer is disposed between the second inorganic insulating sublayer and the organic insulating layer, and the refractive index of the third inorganic insulating sublayer is smaller than the refractive index of the substrate, the refractive index of the second inorganic insulating sublayer, and the refractive index of the organic insulating layer.

15. The display panel according to claim 14, wherein: The thickness of the third inorganic insulating sublayer is smaller than the thickness of the first inorganic insulating sublayer.

16. The display panel according to claim 14, wherein: The inorganic insulating layer further comprises: The fourth inorganic insulating sublayer is disposed between the third inorganic insulating sublayer and the organic insulating layer, and the refractive index of the fourth inorganic insulating sublayer is greater than the refractive index of the first inorganic insulating sublayer and the refractive index of the third inorganic insulating sublayer.

17. The display panel according to claim 16, wherein: The refractive index of the fourth inorganic insulating sublayer is greater than the refractive index of the substrate and greater than the refractive index of the organic insulating layer.

18. The display panel according to claim 16, wherein: The first inorganic insulating sublayer has the same refractive index as the third inorganic insulating sublayer, and the second inorganic insulating sublayer has the same refractive index as the fourth inorganic insulating sublayer.

19. The display panel according to claim 11, wherein: The inorganic insulating sublayer further includes a fifth inorganic insulating sublayer, and the fifth inorganic insulating sublayer is disposed between the fourth inorganic insulating sublayer and the organic insulating layer.

20. The display panel according to claim 11, wherein: The inorganic insulating sublayer comprises: a plurality of alternately stacked low-refractive-index inorganic insulating sublayers and high-refractive-index inorganic insulating sublayers, wherein the low-refractive-index inorganic insulating sublayer is arranged close to the substrate, and the refractive index of the high-refractive-index inorganic insulating sublayer is greater than that of the adjacent low-refractive-index inorganic insulating sublayer. The thickness of the low-refractive-index inorganic insulating sublayer satisfies the following formula: d=(2k-1)λ / (4n), Wherein, k is a positive integer, and the k value is determined according to the number of low-refractive-index inorganic insulating sublayers along the direction from the organic insulating layer to the substrate; λ is the wavelength of light, and n is the refractive index.

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