Photosensitive developing resin having imide structure, preparation method therefor, and use thereof

Abstract

The present invention belongs to the technical field of high polymer materials, and particularly relates to a photosensitive developing resin having an imide structure, a preparation method therefor and the use thereof. Said photosensitive developing resin comprises the following raw materials in parts by weight: 2-6 parts of a polyamine, 6-20 parts of a dicarboxylic anhydride, 1-6 parts of an unsaturated monobasic acid, 0.02-0.08 part of a polymerization inhibitor, 0.02-0.08 part of a catalyst, 2-10 parts of hydrogen peroxide, 2-6 parts of a saturated sodium bicarbonate solution, 1-5 parts of diethyl ether, 3-10 parts of formic acid, 50-70 parts of N-methyl pyrrolidone and 2-8 parts of anhydrous zinc acetate. The present invention comprises first reacting the polyamine with an alicyclic anhydride having a double bond to generate a polyimide structure of which a terminal group has a double bond, then performing epoxidation transformation on the double bond, performing ring-opening esterification using the unsaturated monobasic acid, and then performing modification with an anhydride to introduce carboxyl, so as to finally obtain the photosensitive developing resin having the imide structure. The resin has the advantages of excellent electrical properties, heat resistance, good dimensional stability, excellent adhesion property and a low dielectric constant, and is suitable for preparing IC carrier inks, solder resist inks for printed circuit boards, or chip photoresists.

Description

Imide structure photosensitive developing resin and its preparation method and application Technical Field

[0001] The present invention belongs to the technical field of polymer materials, and in particular relates to an imide structure photosensitive developing resin and a preparation method and application thereof. Background Art

[0002] IC substrate technology originated in Japan in the 1980s and has a history of over 30 years. Early on, it coexisted with integrated IC packaging technology. Currently, nearly all high-end ICs utilize substrate packaging technology, serving as the precise connection between the core chip and conventional printed circuit boards (PCBs). IC substrates are manufactured from copper-clad laminates through processes such as photolithography, solder mask development, and gold plating. They differ from traditional copper clad laminates in several ways. First, the substrate used for IC substrates differs from the epoxy / glass fiber composites used in traditional copper-clad laminates. Instead, they primarily utilize BT resin, ABF insulation film (Ajinomoto Build-up Film), and MIS polymers. These three types of substrate materials are monopolized by foreign companies and often become bottlenecks in chip manufacturing. Second, IC substrate production begins with specialized copper-clad laminates (films), and the circuit etching and solder mask development processes required require more sophisticated techniques than those used in conventional PCB production. This means higher resolution in etching and solder mask development, with line widths typically controlled within tens of microns. Third, as a permanent, fine, protective thin layer material, solder mask photodevelopable inks are required to have stringent heat resistance, thermal expansion resistance, hardness, scratch resistance, and impact resistance on IC substrates. Some applications even require the solder mask layer to have a low dielectric constant to meet high-frequency communication requirements. Fourth, IC substrate back-end processing mostly uses chemical gold plating (industrially referred to as chemical gold plating) rather than electroplating. Chemical gold plating solutions are generally highly acidic or alkaline, which requires the IC substrate solder mask layer to have high chemical gold resistance (i.e., corrosion resistance) to avoid defects such as discoloration, denaturation, and easy peeling of the solder mask layer. Therefore, compared to traditional PCB solder mask inks, IC substrate solder mask inks have more stringent requirements for development resolution, development quality, thermal expansion resistance, and chemical gold resistance. The technical key to IC substrate solder mask inks lies in the photosensitive developer main resin and the photoinitiator system. Therefore, it is necessary to improve the relevant performance indicators of the photosensitive developer main resin to meet the requirements of IC substrates.

[0003] Summary of the Invention

[0004] The first object of the present invention is to provide an imide structure photosensitive developing resin, the second object of the present invention is to provide a method for preparing the photosensitive developing resin, and the third object of the present invention is to provide applications of the photosensitive developing resin.

[0005] According to a first aspect of the present invention, an imide structure photosensitive developing resin is provided. The raw material composition of the imide structure photosensitive developing resin comprises, in parts by weight, 2-6 parts of a polyamine, 6-20 parts of a dicarboxylic acid anhydride, 1-6 parts of an unsaturated monocarboxylic acid, 0.02-0.08 parts of a polymerization inhibitor, 0.02-0.08 parts of a catalyst, 2-10 parts of hydrogen peroxide, 2-6 parts of a saturated sodium bicarbonate solution, 1-5 parts of diethyl ether, 3-10 parts of formic acid, 50-70 parts of N-methylpyrrolidone, and 2-8 parts of anhydrous zinc acetate.

[0006] In some embodiments, the polyamine is selected from one or more of 4,4'-diaminodicyclohexylmethane, 1,4-cyclohexanedimethylamine, 1,3-cyclohexanedimethylamine, 4,4'-(p-dimethylamino)diphenylmethane, isophorone diamine, 1,8-octanediamine, polyethylene glycol diamine, and 2,4,6-triaminopyrimidine. Imide-structured photosensitive developing resins derived from chain polyamines can improve toughness and film-forming properties; imide-structured photosensitive developing resins derived from alicyclic polyamines tend to be tougher and more balanced in properties; imide-structured photosensitive developing resins derived from aromatic polyamines tend to be more rigid and brittle, with unsatisfactory solubility and film-forming properties. Therefore, a combination of the three is generally required to balance performance.

[0007] In some embodiments, the dicarboxylic acid anhydride is selected from one or more of tetrahydrophthalic anhydride, hexahydrophthalic anhydride, and methyltetrahydrophthalic anhydride.

[0008] In some embodiments, the unsaturated monoacid is selected from one or more of acrylic acid, methacrylic acid, and crotonic acid.

[0009] In some embodiments, the polymerization inhibitor is selected from at least one of hydroquinone, p-tert-butylcatechol, and catechol.

[0010] In some embodiments, the catalyst is selected from one or more of benzyltriethylammonium chloride, benzyldiamine, triethylamine, diethylamine, and triphenylphosphine.

[0011] According to a second aspect of the present invention, there is provided a method for preparing the above-mentioned imide structure photosensitive developing resin, comprising the following steps:

[0012] S1. Mixing 40-60% of the total amount of dicarboxylic acid anhydride, polyamine, anhydrous zinc acetate, 20-30% of the total amount of polymerization inhibitor, and N-methylpyrrolidone, heating to 70-80° C. and stirring for 0.5-2 h in a nitrogen atmosphere, then heating to 140-160° C. and stirring continuously for 15-18 hours. After the reaction is completed, the reaction solution is cooled to 20-35° C., filtered, washed with anhydrous ethanol, and the product is dried and ground to obtain a bismaleimide solid powder;

[0013] S2. Mixing the bismaleimide solid powder obtained in step S1 with formic acid, stirring at 50-60° C. for 1-3 hours, then adding hydrogen peroxide, and continuing the reaction for 3-5 hours. After the reaction is completed, adding saturated sodium bicarbonate solution and diethyl ether to the reaction product, shaking evenly, and then standing to separate, separating the organic layer, washing the organic layer with water 2-3 times, and then removing the diethyl ether by rotary evaporation, adding anhydrous magnesium sulfate, drying overnight, and then filtering to remove the magnesium sulfate to obtain the product;

[0014] S3. Mix the product obtained in step S2 with the remaining polymerization inhibitor and catalyst, heat the system to 90-100° C., then add the unsaturated monocarboxylic acid, heat it to 110-120° C. after the addition, and continue to react for 2-3 hours. After the reaction is completed, lower the temperature of the reaction system to 70-90° C., add the remaining dicarboxylic anhydride, and react for 6-8 hours to obtain the product.

[0015] In step S1, anhydrous zinc acetate is used to adsorb water generated in the reaction, and N-methylpyrrolidone is used as a solvent.

[0016] In step S1, a staged heating method is adopted to allow all reaction materials to be mixed uniformly at a lower temperature (70-80°C) first, so as to avoid local implosion during the subsequent high temperature (140-160°C) reaction.

[0017] In step S2, the role of formic acid is mainly to provide a weak acid environment to enhance the oxidizing property of hydrogen peroxide.

[0018] In step S2, the role of diethyl ether is to provide an organic phase in the extraction.

[0019] In step S3, the main reaction raw materials are mixed with the polymerization inhibitor and the catalyst, and then the temperature is raised to 90-100°C. At this time, the unsaturated monocarboxylic acid is added, which is not easy to self-polymerize. After stirring evenly, the temperature is raised to 110-120°C, which can further prevent the unsaturated monocarboxylic acid from exploding.

[0020] This invention introduces an imide structure into a photosensitive developer resin, then grafts the resulting polyimide onto it to enhance the resin's functionality. This method first reacts a polyamine with an alicyclic anhydride containing double bonds to produce a polyimide structure with terminal double bonds. The double bonds are then epoxidized, followed by ring-opening esterification with an unsaturated monobasic acid. The resulting resin is then modified with an anhydride to introduce carboxyl groups, ultimately yielding a photosensitive developer resin with an imide structure. This resin exhibits excellent electrical properties, including heat resistance, good dimensional stability, excellent adhesion, and a relatively low dielectric constant.

[0021] When the dicarboxylic acid anhydride is tetrahydrophthalic anhydride, the polyamine is 1,3-cyclohexanedimethylamine, and the unsaturated monocarboxylic acid is acrylic acid, the schematic diagram of the synthesis route of the present invention is shown in FIG1 .

[0022] In some embodiments, in step S1, the product is dried in a vacuum oven at 50° C. for 4-6 hours and ground to obtain a bismaleimide solid powder.

[0023] In some embodiments, in step S2, hydrogen peroxide needs to be slowly added dropwise, and the addition time is controlled within 2-4 hours.

[0024] In some embodiments, the stirring speed is 600-800 rpm.

[0025] According to a third aspect of the present invention, there is provided a use of the above-mentioned imide structure photosensitive developing resin in the preparation of an IC substrate solder resist ink, a printed circuit board solder resist ink or a chip photoresist.

[0026] According to a fourth aspect of the present invention, a dry film is provided, which is obtained by photocuring or thermally curing the above-mentioned imide structure photosensitive developing resin.

[0027] In some embodiments, the imide structure photosensitive developable resin is printed on a carrier and baked at 70-80° C. for 20-30 minutes to obtain a dry film.

[0028] According to a fifth aspect of the present invention, there is provided a use of the dry film in preparing an IC substrate or a printed circuit board.

[0029] The beneficial effects of the present invention include:

[0030] The photosensitive developing resin of the present invention has a low molecular weight. The low molecular weight polyimide structure oligomer can make the cured film obtained after the resin is cured have a higher glass transition temperature and lower thermal expansion performance. At the same time, due to the large amount of imide structures present, a polyimide cured film is formed after double bond cross-linking and curing. Therefore, the cured film has excellent heat resistance, thermal expansion resistance, and dimensional stability, and can meet the stringent requirements of IC substrate solder mask ink for line width accuracy and thermal deformation resistance. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] FIG1 is a schematic diagram of the synthetic route of Example 1 of the present invention. DETAILED DESCRIPTION

[0032] The present invention will be further described in detail below. It is worth noting that the following examples are only for better explanation of the present invention and are not intended to limit the scope of protection of the present invention. The undisclosed process steps in the examples are prior art. Unless otherwise specified, the following raw materials are commercially available.

[0033] In the following examples, the stirring speed is 600 rpm.

[0034] Example 1

[0035] The method for preparing the imide structure photosensitive developing resin of this embodiment includes the following steps:

[0036] (1) 50.00 g of tetrahydrophthalic anhydride, 46.74 g of 1,3-cyclohexanedimethylamine, 60.30 g of anhydrous zinc acetate, 0.16 g of hydroquinone, and 1.00 L of N-methylpyrrolidone were placed in a 3 L round-bottom four-necked flask equipped with a nitrogen inlet and a thermometer. The mixture was heated to 80°C under a nitrogen atmosphere and stirred for half an hour, then heated to 150°C and stirred for 16 hours. After the reaction was completed, the reaction solution was cooled to room temperature, filtered, and washed three times with anhydrous ethanol. The product was dried in a vacuum oven at 50°C for 4 hours and ground to obtain a solid powder of bismaleimide.

[0037] (2) Add 29.35 g of the bismaleimide solid powder obtained in step (1) and 75.85 g of formic acid into a three-necked flask, stir at 50 ° C for 2 h, then slowly add 48.89 g of hydrogen peroxide dropwise for about 3 h. After the addition is completed, continue the reaction for 5 h. After the reaction is completed, pour the reaction product into a separatory funnel, then add 50 g of saturated sodium bicarbonate solution and 25 g of ether, shake evenly and let it stand for stratification. After separating the organic layer, wash the organic layer 3 times with distilled water, then pour the washed product into a beaker, remove the ether by rotary evaporation, then add 30 g of anhydrous magnesium sulfate and dry overnight, then filter to remove the magnesium sulfate to obtain a dry product.

[0038] (3) 31.32 g of the dried product obtained in step (2) was added to another three-necked flask, and then 0.48 g of hydroquinone and 0.32 g of benzyltriethylammonium chloride were added. The system was heated to 90° C., and then 28.53 g of acrylic acid was added dropwise to the three-necked flask. After the addition was completed, the temperature was raised to 110° C. and the reaction was continued for 2.5 hours. After the reaction was completed, the temperature of the reaction system was lowered to 80° C., and 60.23 g of tetrahydrophthalic anhydride was added and the reaction was continued for 6 hours to obtain the product.

[0039] Example 2

[0040] The method for preparing the imide structure photosensitive developing resin of this embodiment includes the following steps:

[0041] (1) 50.00 g of tetrahydrophthalic anhydride, 46.23 g of 1,8-octanediamine, 60.30 g of anhydrous zinc acetate, 0.16 g of hydroquinone, and 1.00 L of N-methylpyrrolidone were placed in a 3 L round-bottom four-necked flask equipped with a nitrogen inlet and a thermometer. The mixture was heated to 80°C under a nitrogen atmosphere and stirred for half an hour, then heated to 150°C and stirred for 16 hours. After the reaction was completed, the reaction solution was cooled to room temperature, filtered, and washed three times with anhydrous ethanol. The product was dried in a vacuum oven at 50°C for 4 hours and ground to obtain a solid powder of bismaleimide.

[0042] (2) Add 29.35 g of the bismaleimide solid powder obtained in step (1) and 75.85 g of formic acid into a three-necked flask, stir at 50 ° C for 2 h, then slowly add 48.89 g of hydrogen peroxide dropwise for about 3 h. After the addition is completed, continue the reaction for 5 h. After the reaction is completed, pour the reaction product into a separatory funnel, then add 50 g of saturated sodium bicarbonate solution and 25 g of ether, shake evenly and let it stand for stratification. After separating the organic layer, wash the organic layer 3 times with distilled water, then pour the washed product into a beaker, remove the ether by rotary evaporation, then add 30 g of anhydrous magnesium sulfate and dry overnight, then filter to remove the magnesium sulfate to obtain a dry product.

[0043] (3) 31.32 g of the dried product obtained in step (2) was added to another three-necked flask, and then 0.48 g of hydroquinone and 0.32 g of benzyltriethylammonium chloride were added. The system was heated to 90° C., and then 28.53 g of acrylic acid was added dropwise to the three-necked flask. After the addition was completed, the temperature was raised to 110° C. and the reaction was continued for 2.5 hours. After the reaction was completed, the temperature of the reaction system was lowered to 80° C., and 60.23 g of tetrahydrophthalic anhydride was added and the reaction was continued for 6 hours to obtain the product.

[0044] Example 3

[0045] The method for preparing the imide structure photosensitive developing resin of this embodiment includes the following steps:

[0046] (1) 50.00 g of tetrahydrophthalic anhydride, 41.23 g of polyoxyethylene diamine, 60.30 g of anhydrous zinc acetate, 0.16 g of hydroquinone, and 1.00 L of N-methylpyrrolidone were placed in a 3 L round-bottom four-necked flask equipped with a nitrogen inlet and a thermometer. The mixture was heated to 80° C. and stirred for half an hour under a nitrogen atmosphere, then heated to 150° C. and stirred for 16 hours. After the reaction was completed, the reaction solution was cooled to room temperature, filtered, and washed twice with anhydrous ethanol. The product was dried in a vacuum oven at 50° C. for 4 hours and ground to obtain a solid powder of bismaleimide.

[0047] (2) Add 27.74 g of the bismaleimide solid powder obtained in step (1) and 75.85 g of formic acid into a three-necked flask, stir at 50 ° C for 2 h, then slowly add 48.89 g of hydrogen peroxide dropwise for about 3 h. After the addition is completed, continue the reaction for 5 h. After the reaction is completed, pour the reaction product into a separatory funnel, then add 50 g of saturated sodium bicarbonate solution and 25 g of ether, shake evenly and let it stand for stratification. After separating the organic layer, wash the organic layer 3 times with distilled water, then pour the washed product into a beaker, remove the ether by rotary evaporation, then add 30 g of anhydrous magnesium sulfate and dry overnight, then filter to remove the magnesium sulfate to obtain a dry product.

[0048] (3) 31.32 g of the dried product obtained in step (2) was added to another three-necked flask, and then 0.48 g of hydroquinone and 0.32 g of benzyltriethylammonium chloride were added. The system was heated to 90° C., and then 28.53 g of acrylic acid was added dropwise to the three-necked flask. After the addition was completed, the temperature was raised to 110° C. and the reaction was continued for 2.5 hours. After the reaction was completed, the temperature of the reaction system was lowered to 80° C., and 60.23 g of tetrahydrophthalic anhydride was added and the reaction was continued for 6 hours to obtain the product.

[0049] Example 4

[0050] The method for preparing the imide structure photosensitive developing resin of this embodiment includes the following steps:

[0051] (1) 50.00 g of tetrahydrophthalic anhydride, 23.37 g of 1,3-cyclohexanedimethylamine, 20.62 g of polyoxyethylene diamine, 60.30 g of anhydrous zinc acetate, 0.16 g of hydroquinone, and 1.00 L of N-methylpyrrolidone were placed in a 3 L round-bottom four-necked flask equipped with a nitrogen inlet and a thermometer. The mixture was heated to 80°C in a nitrogen atmosphere and stirred for half an hour, then heated to 150°C and stirred for 16 hours. After the reaction was completed, the reaction solution was cooled to room temperature, filtered, and washed twice with anhydrous ethanol. The product was dried in a vacuum oven at 50°C for 4 hours and ground to obtain a solid powder of bismaleimide.

[0052] (2) Add 28.79 g of the bismaleimide solid powder obtained in step (1) and 75.85 g of formic acid into a three-necked flask, stir at 50 ° C for 2 h, then slowly add 48.89 g of hydrogen peroxide dropwise for about 3 h. After the addition is completed, continue the reaction for 5 h. After the reaction is completed, pour the reaction product into a separatory funnel, then add 50 g of saturated sodium bicarbonate solution and 25 g of ether, shake evenly and let it stand for stratification. After separating the organic layer, wash the organic layer 3 times with distilled water, then pour the washed product into a beaker, remove the ether by rotary evaporation, then add 30 g of anhydrous magnesium sulfate and dry overnight, then filter to remove the magnesium sulfate to obtain a dry product.

[0053] (3) 31.32 g of the dried product obtained in step (2) was added to another three-necked flask, and then 0.48 g of hydroquinone and 0.32 g of benzyltriethylammonium chloride were added. The system was heated to 90° C., and then 28.53 g of acrylic acid was added dropwise to the three-necked flask. After the addition was completed, the temperature was raised to 110° C. and the reaction was continued for 2.5 hours. After the reaction was completed, the temperature of the reaction system was lowered to 80° C., and 60.23 g of tetrahydrophthalic anhydride was added and the reaction was continued for 6 hours to obtain the product.

[0054] Example 5

[0055] The method for preparing the imide structure photosensitive developing resin of this embodiment includes the following steps:

[0056] (1) 50.00 g of tetrahydrophthalic anhydride, 23.37 g of 1,3-cyclohexanedimethylamine, 23.12 g of 1,8-octanediamine, 60.30 g of anhydrous zinc acetate, 0.16 g of hydroquinone, and 1.00 L of N-methylpyrrolidone were placed in a 3 L round-bottom four-necked flask equipped with a nitrogen inlet and a thermometer. The mixture was heated to 80°C in a nitrogen atmosphere and stirred for half an hour, then heated to 150°C and stirred for 16 hours. After the reaction was completed, the reaction solution was cooled to room temperature, filtered, and washed twice with anhydrous ethanol. The product was dried in a vacuum oven at 50°C for 4 hours and ground to obtain a solid powder of bismaleimide.

[0057] (2) Add 29.78 g of the bismaleimide solid powder obtained in step (1) and 75.85 g of formic acid into a three-necked flask, stir at 50 ° C for 2 h, then slowly add 48.89 g of hydrogen peroxide dropwise for about 3 h. After the addition is completed, continue the reaction for 5 h. After the reaction is completed, pour the reaction product into a separatory funnel, then add 50 g of saturated sodium bicarbonate solution and 25 g of ether, shake evenly and let it stand for stratification. After separating the organic layer, wash the organic layer three times with distilled water, then pour the washed product into a beaker, remove the ether by rotary evaporation, then add 30 g of anhydrous magnesium sulfate and dry overnight, then filter to remove the magnesium sulfate to obtain a dry product.

[0058] (3) 31.32 g of the dried product obtained in step (2) was added to another three-necked flask, and then 0.48 g of hydroquinone and 0.32 g of benzyltriethylammonium chloride were added. The system was heated to 90° C., and then 28.53 g of acrylic acid was added dropwise to the three-necked flask. After the addition was completed, the temperature was raised to 110° C. and the reaction was continued for 2.5 hours. After the reaction was completed, the temperature of the reaction system was lowered to 80° C., and 60.23 g of tetrahydrophthalic anhydride was added and the reaction was continued for 6 hours to obtain the product.

[0059] Next, the performance of the imide structure photosensitive developing resins prepared in Examples 1-5 was tested using the following method:

[0060] (1) Photosensitivity: Print the imide structure photosensitive developing resin on the copper clad laminate, bake it at 75℃ for 20 minutes, place a 21-level light gradient ruler on the film layer, and expose and develop it under an exposure machine with an LED light source. The time when 7 grids remain on the film layer is used as the standard.

[0061] (2) Minimum line spacing and line width: Tested in accordance with the method of GB / T 29846-2013 Photoimaging resistant electroplating resist for printed circuit boards.

[0062] (3) Etching resistance: The etching resistance is tested according to the method of GB / T 29846-2013 for photo-imaging electroplating resists for printed circuit boards. After etching, the pattern is visually intact, the line edges are neat, and there is no wrinkling, shedding or dog-tooth shape. The wrinkling without shedding is good, and shedding is poor.

[0063] (4) Electroplating resistance: Electroplating resistance was tested according to the method of GB / T 29846-2013 for photo-imaging electroplating resists for printed circuit boards. After electroplating, the pattern was visually inspected to be free of plating, bubbles, or shedding, which was considered excellent. The pattern with plating but no shedding was considered good, and the pattern with shedding was considered poor.

[0064] (5) Film removal: The test sample was placed in a 3 wt% NaOH aqueous solution at 50°C and the film removal performance was observed. The film removal performance was excellent if it was completely removed within 60 seconds without any residue, good if it was completely removed within 60-120 seconds, and poor if it was removed after 120 seconds.

[0065] The test results are shown in Table 1.

[0066] Table 1 Performance test results of imide structure photosensitive developing resins of Examples 1-5

[0067] As can be seen from Table 1, the imide structure photosensitive developing resin of the present invention has excellent properties such as photosensitivity, etching resistance, electroplating resistance, and film stripping resistance, and is suitable for use in preparing IC substrates.

[0068] The above embodiments are preferred implementation modes of the present invention, but the implementation modes of the present invention are not limited to the above embodiments. Any other changes, modifications, substitutions, combinations, and simplifications that do not deviate from the spirit and principles of the present invention should be considered as equivalent replacement methods and are included in the scope of protection of the present invention.

Claims

1. An imide structure photosensitive developing resin, characterized in that: The raw material composition includes, by weight: 2-6 parts of polyamine, 6-20 parts of dicarboxylic acid anhydride, 1-6 parts of unsaturated monoacid, 0.02-0.08 parts of polymerization inhibitor, 0.02-0.08 parts of catalyst, 2-10 parts of hydrogen peroxide, 2-6 parts of saturated sodium bicarbonate solution, 1-5 parts of ether, 3-10 parts of formic acid, 50-70 parts of N-methylpyrrolidone and 2-8 parts of anhydrous zinc acetate.

2. The imide structure photosensitive developing resin according to claim 1, characterized in that: The polyamine is selected from one or more of 4,4'-diaminodicyclohexylmethane, 1,4-cyclohexanedimethylamine, 1,3-cyclohexanedimethylamine, 4,4'-(p-dimethylamino)diphenylmethane, isophoronediamine, 1,8-octanediamine, polyoxyethylenediamine, and 2,4,6-triaminopyrimidine.

3. The imide structure photosensitive developing resin according to claim 1 or 2, characterized in that: The dicarboxylic acid anhydride is selected from one or more of tetrahydrophthalic anhydride, hexahydrophthalic anhydride, and methyltetrahydrophthalic anhydride; the unsaturated monobasic acid is selected from one or more of acrylic acid, methacrylic acid, and crotonic acid.

4. The imide structure photosensitive developing resin according to claim 1 or 2, characterized in that: The inhibitor is selected from at least one of hydroquinone, p-tert-butylcatechol and catechol; the catalyst is selected from one or more of benzyltriethylammonium chloride, benzyldiamine, triethylamine, diethylamine and triphenylphosphine.

5. The method for preparing the imide structure photosensitive developing resin according to any one of claims 1 to 4, characterized in that: The following steps are involved: S1. Mix 40-60% of the total amount of dicarboxylic acid anhydride, polyamine, anhydrous zinc acetate, 20-30% of the total amount of polymerization inhibitor and N-methylpyrrolidone, heat to 70-80° C. and stir for 0.5-2h in a nitrogen atmosphere, then heat to 140-160° C. and continue stirring for 15-18 hours. After the reaction is completed, cool the reaction solution to 20-35° C., filter and wash with anhydrous ethanol, dry and grind the product to obtain a bismaleimide solid powder; S2, mixing the bismaleimide solid powder obtained in step S1 with formic acid, stirring at 50-60° C. for 1-3 h, then adding hydrogen peroxide, and continuing the reaction for 3-5 h. After the reaction is completed, adding saturated sodium bicarbonate solution and diethyl ether to the reaction product, shaking evenly and standing to separate, separating the organic layer, washing the organic layer with water for 2-3 times, then removing the diethyl ether by rotary evaporation, adding anhydrous magnesium sulfate to dry overnight, and then filtering to remove the magnesium sulfate to obtain the product; S3, the product obtained in step S2 is mixed with the remaining inhibitor and catalyst, the system is heated to 90-100°C, and then the unsaturated monobasic acid is added, and the temperature is raised to 110-120°C after the addition, and the reaction is continued for 2-3 hours, After the reaction is completed, the temperature of the reaction system is lowered to 70-90°C, and the remaining dicarboxylic acid anhydride is added and reacted for 6-8 hours to obtain the product.

6. The method for preparing the imide structure photosensitive developing resin according to claim 5, characterized in that: In step S2, hydrogen peroxide needs to be slowly added dropwise, and the adding time is controlled within 2-4 hours.

7. The method for preparing the imide structure photosensitive developing resin according to claim 5 or 6, characterized in that: The stirring speed is 600-800 rpm.

8. Use of the imide structure photosensitive developing resin according to any one of claims 1 to 4 in the preparation of solder resist ink for IC substrates, solder resist ink for printed circuit boards or chip photoresist.

9. A dry film, characterized in that: The resin is obtained by photocuring or thermally curing the imide structure photosensitive developing resin as described in any one of claims 1 to 4.

10. Use of the dry film according to claim 9 in preparing an IC substrate or a printed circuit board.

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