Semiconductor packaging structure

Abstract

Provided in the present disclosure is a semiconductor packaging structure. The semiconductor packaging structure comprises: a semiconductor substrate, which comprises a printed circuit board and a molded package, wherein the printed circuit board is located on a part of the surface of the molded package, and the molded package has a first accommodating access which the printed circuit board covers; a semiconductor laser chip, which is located on one side of an exposed surface of the printed circuit board or on one side of an exposed surface of the molded package, and is electrically connected to the printed circuit board; and a driving chip, which is located in the first accommodating access and is electrically connected to the printed circuit board, wherein the driving chip completely fills the first accommodating access. According to the present disclosure, since the driving chip is located in the first accommodating access of the molded package, the driving chip and the molded package have a common occupied area in the semiconductor packaging structure, thereby achieving the purpose of reducing the size of the semiconductor packaging structure.

Description

Semiconductor packaging structure Technical Field

[0001] The present disclosure relates to the technical field of integrated circuits, and in particular to a semiconductor packaging structure. Background Art

[0002] In classic time-of-flight measurements, the principle of direct time-of-flight (D-ToF) is relatively straightforward. A light pulse is emitted directly, and then the time interval between the reflected light pulse and the emitted light pulse is measured to obtain the light's flight time. This is typically used in single-point ranging systems.

[0003] Among them, in traditional packaging methods, the D-ToF structure is usually packaged using a ceramic substrate due to its high heat dissipation requirements, and the chips and circuit devices in this D-ToF structure are exposed in space, resulting in a loose package and a large size of the package structure.

[0004] Therefore, there is an urgent need for a semiconductor packaging structure that can at least reduce the chip packaging size.

[0005] Summary of the Invention

[0006] The main purpose of the present disclosure is to provide a semiconductor packaging structure to solve the problem of large size of the packaging structure in the prior art.

[0007] To achieve the above-mentioned objectives, according to one aspect of the present disclosure, a semiconductor packaging structure is provided, comprising: a semiconductor substrate, comprising a printed circuit board and a molded package body, the printed circuit board being located on a portion of the surface of the molded package body, and the molded package body having a first receiving groove, the printed circuit board covering the first receiving groove; a semiconductor laser chip being located on one side of the exposed surface of the printed circuit board or on one side of the exposed surface of the molded package body, and the semiconductor laser chip being electrically connected to the printed circuit board; a driver chip being located in the first receiving groove and electrically connected to the printed circuit board, wherein the driver chip completely fills the first receiving groove.

[0008] Furthermore, the semiconductor laser chip has a first projection on the molded package, and the driver chip has a second projection on the molded package, and the first projection and the second projection do not overlap.

[0009] Furthermore, it also includes: a metal substrate, located between the semiconductor laser chip and the printed circuit board or between the semiconductor laser chip and the molded package, wherein, when the semiconductor laser chip is located on one side of the exposed surface of the printed circuit board, the metal substrate is located between the semiconductor laser chip and the printed circuit board; when the semiconductor laser chip is located on one side of the exposed surface of the molded package, the metal substrate is located between the semiconductor laser chip and the molded package.

[0010] Furthermore, the molded package body has a plurality of second accommodating grooves, and the printed circuit board covers the plurality of second accommodating grooves. The semiconductor packaging structure also includes: a plurality of first electronic components, which are located in the plurality of second accommodating grooves, each first electronic component is electrically connected to the printed circuit board, the plurality of first electronic components correspond one-to-one to the plurality of second accommodating grooves, each first electronic component completely fills each second accommodating groove, and the semiconductor laser chip has a first projection on the molded package body, each first electronic component has a third projection on the molded package body, and the first projection and the third projection do not overlap.

[0011] Furthermore, it also includes: a first support portion, located on the exposed surface of the printed circuit board and surrounding the semiconductor laser chip; a first metal lens head, located on the side of the first support portion away from the printed circuit board, and a first sealed cavity is provided between the first metal lens head, the first support portion and the semiconductor substrate, and the semiconductor laser chip is located in the first sealed cavity.

[0012] Furthermore, it also includes: a photodetector chip, which is located on the exposed surface of the printed circuit board and is spaced apart from the semiconductor laser chip. Wherein, when the semiconductor packaging structure includes a first supporting portion, the first supporting portion is spaced apart from the photodetector chip.

[0013] Furthermore, a straight line passing through the center of the photodetector chip and parallel to the exposed surface of the printed circuit board is a first center line, a straight line passing through the center of the semiconductor laser chip and parallel to the exposed surface of the printed circuit board is a second center line, and the first center line and the second center line are collinear.

[0014] Furthermore, it also includes: a second support part, located on the printed circuit board and surrounding the photodetector chip; a second super lens head, located on the side of the second support part away from the printed circuit board, and a second sealed cavity is provided between the second support part, the second super lens head and the semiconductor substrate, and the photodetector chip is located in the second sealed cavity.

[0015] Furthermore, the molded package body has multiple third accommodating grooves, and the printed circuit board covers the multiple third accommodating grooves. The semiconductor packaging structure also includes: multiple second electronic components, located in the multiple third accommodating grooves, each second electronic component is electrically connected to the printed circuit board, the multiple second electronic components correspond one-to-one to the multiple third accommodating grooves, each second electronic component completely fills each third accommodating groove, and the photodetector chip has a fourth projection on the molded package body, and each second electronic component has a fifth projection on the molded package body, and the fourth projection and the fifth projection do not overlap.

[0016] Furthermore, the semiconductor laser chip includes a vertical cavity surface emitting laser, and the photodetector chip includes a single electron avalanche diode.

[0017] The technical solution disclosed herein is applied to a semiconductor packaging structure, in order to more quickly dissipate the heat generated by the semiconductor device in the semiconductor packaging structure while improving the packaging stability of the driver chip in the semiconductor packaging structure. A semiconductor packaging structure is provided, wherein the semiconductor packaging structure includes a semiconductor substrate, a semiconductor laser chip, and a driver chip. A molded package body is used as a heat dissipation substrate in the semiconductor packaging structure, so that a printed circuit board is located on a portion of the surface of the molded package body. Since the heat dissipation coefficient of the molded package body is greater than the heat dissipation coefficient of the printed circuit board, the heat generated by the semiconductor device on the printed circuit board can be dissipated to prevent the heat from damaging the semiconductor device. A semiconductor laser chip electrically connected to the printed circuit board is provided on a side of the printed circuit board away from the molded package body. On the exposed surface and / or the exposed surface of the molded package, the driver chip is located in the first receiving groove in the molded package, and the driver chip is in contact with the printed circuit board. Therefore, the above-mentioned molded package formed for packaging semiconductor devices can cover the driver chip, thereby improving the stability of the driver chip in the semiconductor packaging structure and the packaging strength of the driver chip. Moreover, since the driver chip is completely filled in the first receiving groove in the above-mentioned molded package, the driver chip and the molded package are integrated, which avoids the driver chip and the heat dissipation substrate of the semiconductor packaging structure occupying different packaging areas in the semiconductor packaging structure respectively, so that the driver chip and the molded package have a common occupied area in the semiconductor packaging structure, thereby achieving the purpose of reducing the size of the semiconductor packaging structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings, which constitute part of the present disclosure, are intended to provide a further understanding of the present disclosure. The exemplary embodiments of the present disclosure and their descriptions are intended to explain the present disclosure and do not constitute an improper limitation of the present disclosure. In the accompanying drawings:

[0019] FIG1 is a schematic cross-sectional view of a semiconductor package structure according to an embodiment of the present disclosure;

[0020] FIG2 is a schematic cross-sectional view of another embodiment of a semiconductor package structure according to the present disclosure;

[0021] FIG3 shows a cross-sectional structural diagram of another embodiment of a semiconductor package structure according to the present disclosure;

[0022] FIG4 is a schematic diagram showing the projection of a semiconductor laser chip and a photodetector chip on a molded package body in another embodiment of a semiconductor package structure;

[0023] FIG5 is a schematic diagram showing projections of the driver chip and the first and second electronic components in the semiconductor package structure shown in FIG3 on the molded package body;

[0024] FIG6 shows a schematic cross-sectional view of another embodiment of a semiconductor package structure according to the present disclosure;

[0025] FIG. 7 is a schematic projection diagram of the driver chip, the first electronic component, and the second electronic component in the semiconductor package structure shown in FIG. 6 on the molded package body.

[0026] Among them, the above-mentioned drawings include the following figure marks: 10, molded package; 20, printed circuit board; 30, semiconductor laser chip; 40, driver chip; 50, photodetector chip; 60, metal base; 70, first electronic component; 80, first support part; 90, first metal lens; 100, second electronic component; 110, fixing glue; 120, second support part; 130, second metal lens; 140, first center line; 150, second center line. DETAILED DESCRIPTION

[0027] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments in the present disclosure may be combined with each other. The present disclosure will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0028] In order to enable those skilled in the art to better understand the solutions of the present disclosure, the technical solutions in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the embodiments described are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present disclosure.

[0029] It should be noted that the terms "first," "second," and the like in the specification and claims of the present disclosure and the accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate for the embodiments of the present disclosure described herein. In addition, the terms "including" and "having," and any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units that are not explicitly listed or inherent to these processes, methods, products, or apparatus.

[0030] As mentioned in the background, traditional chip packaging structures typically utilize ceramic substrates to achieve better heat dissipation. However, since the chips and circuit components in such packaging structures are exposed, the packaging structure is unstable and relatively large. To address the aforementioned technical issues, the inventors of the present disclosure provide a semiconductor packaging structure.

[0031] In some optional embodiments, the inventors of the present disclosure provide a semiconductor packaging structure, as shown in Figure 1, the semiconductor packaging structure includes a semiconductor substrate, a semiconductor laser chip 30 and a driver chip 40, wherein the above-mentioned semiconductor substrate includes a printed circuit board 20 and a molded package body 10, the above-mentioned printed circuit board 20 is located on a portion of the surface of the above-mentioned molded package body 10, and the molded package body 10 has a first receiving groove, the above-mentioned printed circuit board 20 covers the above-mentioned first receiving groove, the above-mentioned semiconductor laser chip 30 is located on one side of the exposed surface of the above-mentioned printed circuit board 20 or the above-mentioned semiconductor laser chip 30 is located on one side of the exposed surface of the above-mentioned molded package body 10, the above-mentioned driver chip 40 is located in the above-mentioned first receiving groove and is electrically connected to the printed circuit board 20, wherein the driver chip 40 completely fills the first receiving groove.

[0032] Specifically, the printed circuit board 20 may be a flexible printed circuit board, and the molded package 10 may be an epoxy molded package.

[0033] Specifically, since the printed circuit board 20 is located on a partial surface of the molded package 10, the above-mentioned semiconductor substrate may include the printed circuit board 20 and the molded package 10 stacked in sequence; or the above-mentioned semiconductor substrate may include a first portion in which the printed circuit board 20 and the molded package 10 are stacked in sequence and a second portion that only includes the molded package 10. It can be understood that the above-mentioned first portion and second portion are connected to each other. Thus, when the semiconductor substrate includes a printed circuit board 20 and a molded package 10 stacked in sequence, the exposed surface is the exposed surface of the printed circuit board 20 on the side away from the molded package 10, and the semiconductor laser chip 30 is located on the exposed surface of the printed circuit board 20 on the side away from the molded package 10. When the semiconductor substrate includes a first portion in which the printed circuit board 20 and the molded package 10 are stacked in sequence and a second portion that includes only the molded package 10, the semiconductor laser chip 30 can be located on the exposed surface of the printed circuit board 20 on the side away from the molded package 10 in the first portion, as shown in FIG1 , and / or the semiconductor laser chip 30 can be located on the exposed surface of the molded package 10 in the second portion that is not covered by the printed circuit board 20, as shown in FIG2 . Furthermore, the semiconductor laser chip 30 is electrically connected to the printed circuit board 20. Illustratively, the semiconductor laser chip 30 can be connected to the printed circuit board 20 via bonding wires. When the semiconductor laser chip 30 is located on the exposed surface of the molded package 10, a fixing glue 110 can be used around the semiconductor laser chip 30 to achieve the purpose of fixing the package. Optionally, the fixing glue 110 can be an insulating glue.

[0034] Specifically, as shown in Figure 2, the above-mentioned driver chip 40 is arranged in contact with the printed circuit board 20, thereby realizing electrical connection between the driver chip 40 and the printed circuit board 20, so that the driver chip 40 is used to drive the semiconductor laser chip 30 located on the printed circuit board 20 to emit light. Furthermore, in order to enhance the stability of the driver chip 40 in the semiconductor packaging structure, the above-mentioned driver chip 40 can be encapsulated in the molded package body 10 to realize the integration of the driver chip 40 and the molded package body 10. Therefore, the above-mentioned molded package body 10 has a first receiving groove corresponding to the driver chip 40, that is, when the above-mentioned driver chip 40 is located in the above-mentioned first receiving groove, the driver chip 40 completely fills the above-mentioned first receiving groove, thereby not only reducing the size of the semiconductor packaging structure, but also further enhancing the stability of the semiconductor packaging structure. In addition, due to the good heat dissipation effect of the molded package body 10 itself, the semiconductor packaging structure will also have a higher efficiency.

[0035] Since semiconductor devices generate heat during operation, existing semiconductor packaging methods generally adopt a thermal and electrical separation packaging structure. In the above-mentioned embodiment of the present disclosure, in order to more quickly conduct the heat generated by the semiconductor device in the semiconductor packaging structure while improving the packaging stability of the driver chip 40 in the semiconductor packaging structure, a molded package body 10 is used as a heat dissipation substrate in the semiconductor packaging structure, so that the printed circuit board 20 is located on a portion of the surface of the molded package body 10. Optionally, the thermal conductivity of the above-mentioned molded plastic package body can be 2W / (m·K), and the thermal conductivity of the above-mentioned printed circuit board can be 0.3W / (m·K). As can be seen from the above, the molded plastic package has good thermal conductivity, thus achieving the purpose of dissipating heat generated by the semiconductor devices located on the printed circuit board 20, preventing the heat from damaging the semiconductor devices. Furthermore, since the molded package 10 formed for encapsulating the semiconductor devices can cover the driver chip 40, the stability of the driver chip 40 in the semiconductor package structure is improved. Furthermore, since the driver chip 40 completely fills the first receiving groove in the molded package 10, the driver chip 40 and the molded package 10 are integrated, and the driver chip 40 does not occupy additional surface area of ​​the printed circuit board 20, thereby reducing the size of the semiconductor package structure. Furthermore, since the molded package 10 also has advantages such as excellent tensile strength, impact strength, heat resistance, dimensional stability, and processability, the molded package 10 can increase the flatness and strength of the printed circuit board 20.

[0036] In some optional embodiments, the semiconductor laser chip 30 has a first projection on the molded package 10, and the driver chip 40 has a second projection on the molded package 10, wherein the molded package 10 corresponding to the above-mentioned first projection is a heat area of ​​the semiconductor packaging structure. When the driver chip is located in the molded package corresponding to the heat area, the heat area will affect the performance of the semiconductor device, that is, the driver chip is easily heated and thermal drift occurs, causing electronic signal interference. Therefore, in order to avoid thermal drift of the driver chip and reduce electronic signal interference, when determining the above-mentioned first projection and second projection, the first projection and the second projection are made not to overlap.

[0037] Specifically, in an optional embodiment, the semiconductor package structure includes a semiconductor substrate, a semiconductor laser chip 30, and a driver chip 40, wherein the semiconductor substrate includes a stacked molded package body 10 and a printed circuit board 20, wherein the semiconductor laser chip is located on a surface of the printed circuit board 20 away from the molded package body 10, and the driver chip 40 is located in the molded package body 10, and the molded package body 10 has a first receiving groove, so that the driver chip 40 is located in the first receiving groove, the driver chip 40 completely fills the first receiving groove, and the driver chip 40 is electrically connected to the printed circuit board 20. Furthermore, the projection of the semiconductor laser chip 30 on the printed circuit board 20 and the projection on the molded package body 10 correspond to a first projection, and the projection of the driver chip 40 on the molded package body 10 corresponds to a second projection, and the first projection and the second projection do not overlap.

[0038] Specifically, in another optional embodiment, the semiconductor substrate includes a first portion in which a printed circuit board 20 and a molded package 10 are stacked, and a second portion including only a single-layer molded package 10 not covered by the printed circuit board 20. The first portion and the second portion are connected to each other, and the semiconductor laser chip 30 is located on the exposed surface of the single-layer molded package 10 not covered by the printed circuit board 20. The driver chip 40 is located in the molded package 10, and the molded package 10 has a first receiving groove. The driver chip 40 completely fills the first receiving groove and is electrically connected to the printed circuit board 20. Furthermore, the projection of the semiconductor laser chip 30 on the molded package 10 corresponds to the first projection, and the projection of the driver chip 40 on the molded package 10 corresponds to the second projection. The first projection and the second projection do not overlap.

[0039] Furthermore, in the case where the semiconductor substrate includes a first portion in which the printed circuit board 20 and the molded package 10 are stacked, and a second portion including only the single-layer molded package 10 that is not covered by the printed circuit board 20, and the first portion and the second portion are connected to each other, if the semiconductor laser chip 30 includes multiple semiconductor laser chips, some of the semiconductor laser chips 30 can be located on a side surface of the printed circuit board 20 away from the molded package 10, and another part of the semiconductor laser chips 30 can be located on an exposed surface of the single-layer molded package 10 that is not covered by the printed circuit board 20.

[0040] In some optional embodiments, in order to electrically connect the semiconductor laser chip 30 and the printed circuit board 20, or to better transfer heat from the semiconductor laser chip 30 to the molded package 10 and remove it from the molded package 10, the semiconductor package structure may further include a metal substrate 60. Specifically, the metal substrate 60 may be located between the semiconductor laser chip 30 and the printed circuit board 20, or between the semiconductor laser chip 30 and the molded package 10. When the semiconductor laser chip 30 is located on one side of the exposed surface of the printed circuit board 20, the metal substrate 60 is located between the semiconductor laser chip 30 and the printed circuit board 20, as shown in FIG1 . When the semiconductor laser chip 30 is located on one side of the exposed surface of the molded package 10, the metal substrate 60 is located between the semiconductor laser chip 30 and the molded package 10, as shown in FIG2 .

[0041] The material of the metal substrate 60 may include, but is not limited to, copper, gold, and silver. The metal substrate 60 is also used to connect the cathode of the semiconductor laser chip 30 to the printed circuit board 20. Optionally, the thermal conductivity of the semiconductor laser chip 30 may be 120 W / m·K, and the thermal conductivity of the metal substrate 60 may be 200 W / m·K or above. The metal substrate 60 is connected to the printed circuit board 20 or the molded package 10 as a whole piece of metal material, so that the heat of the semiconductor laser chip 30 can be directly transferred to the printed circuit board 20 or the molded package 10, thereby improving the heat dissipation efficiency of the semiconductor laser chip 30 and the heat dissipation efficiency of the semiconductor package structure. Optionally, to further enhance the heat dissipation efficiency of the semiconductor package structure, the vertical projection area of ​​the metal substrate 60 on the molded package 10 is larger than the vertical projection area of ​​the semiconductor laser chip 30 on the molded package 10.

[0042] More specifically, in the case where the semiconductor substrate in the above-mentioned semiconductor package structure includes a stacked printed circuit board 20 and a molded package body 10, since the semiconductor laser chip 30 is located on the side of the printed circuit board 20 away from the exposed surface of the molded package body 10, the metal substrate 60 is located between the semiconductor laser chip 30 and the above-mentioned printed circuit board 20; in the case where the semiconductor substrate in the above-mentioned semiconductor package structure includes a first portion in which the printed circuit board 20 and the molded package body 10 are stacked and a second portion including only the molded package body 10, the first portion and the second portion are connected to each other, and the semiconductor laser chip 30 is located on the side of the exposed surface of the molded package body 10, the above-mentioned metal substrate 60 can be located between the semiconductor laser chip 30 and the above-mentioned printed circuit board 20. and the molded package 10; in the above-mentioned semiconductor package structure, the semiconductor substrate includes a first portion in which the printed circuit board 20 and the molded package 10 are stacked and a second portion including only the molded package 10, the first portion and the second portion are connected to each other, and the semiconductor laser chip 30 includes a plurality of semiconductor laser chips. When some semiconductor laser chips 30 are located on the side of the printed circuit board 20 away from the exposed surface of the molded package 10, the metal substrate 60 is provided between the part of the semiconductor laser chip 30 and the printed circuit board 20, and when another part of the semiconductor laser chip 30 is located on the side of the exposed surface of the molded package 10, the metal substrate 60 is provided between the another part of the semiconductor laser chip 30 and the molded package 10.

[0043] In order to reduce the packaging size of the semiconductor packaging structure, as shown in Figure 1, in some optional embodiments, the molded package body 10 has a plurality of second receiving grooves, and the printed circuit board 20 covers the plurality of second receiving grooves. The semiconductor packaging structure also includes a plurality of first electronic components 70, which are located in the plurality of second receiving grooves, and each first electronic component 70 is electrically connected to the printed circuit board 20. The plurality of first electronic components 70 correspond one-to-one to the plurality of second receiving grooves, and each first electronic component 70 completely fills each second receiving groove, and the semiconductor laser chip 30 has a first projection on the molded package body 10, and each first electronic component 70 has a third projection on the molded package body 10, and the first projection and the third projection do not overlap.

[0044] In the above embodiment, the projection of the semiconductor laser chip 30 on the molded package 10 is the first projection. Since the semiconductor laser chip 30 generates heat during operation, the area in the molded package 10 corresponding to the first projection of the semiconductor laser chip 30 is the heat area. When the electronic component is located in the heat area, the performance of the electronic component will be affected, that is, it is easy to be heated and cause thermal drift, resulting in electronic signal interference and other phenomena. Therefore, the above-mentioned electronic component is arranged in the molded package 10 outside the first projection, that is, a plurality of second accommodating grooves are provided in the molded package 10, and each second accommodating groove is completely filled with each electronic component, so that when the projection of each electronic component in the molded package 10 is the third projection, the above-mentioned first projection and the third projection do not overlap.

[0045] Specifically, the first electronic component 70 may include an electronic component such as a resistor, capacitor or inductor in the same circuit structure as the semiconductor laser chip 30. Optionally, the first electronic component 70 may be a packaged electronic component with a certain elasticity. For example, the resistor may be a mixture of metal powder and glass glaze powder and screen-printed on the surface of the printed circuit board 20, and the resistor may completely fill the second receiving groove in the molded package 10. For example, the capacitor may be a chip capacitor, i.e., a multilayer (laminated or stacked) chip ceramic capacitor, also known as a chip capacitor, a chip capacitor, etc., which is formed by stacking a ceramic dielectric film with electrodes in a staggered manner, and then undergoing a one-time high-temperature sintering to form a ceramic chip, and then forming a metal layer as an external electrode at both ends of the ceramic chip, thereby forming a structure similar to a monolith, which has a stronger elasticity than the molded package 10, so that the first electronic component 70 with stronger elasticity is encapsulated in the molded package 10. It can also further increase the elasticity of the molded package 10, thereby improving the packaging elasticity of the semiconductor packaging structure and improving the reliability of the semiconductor packaging structure.

[0046] Furthermore, as shown in FIG1 , the size of the driver chip 40 is larger than the size of the first electronic component 70 , the multiple first electronic components 70 and the driver chip 40 are spaced apart, and the multiple first electronic components 70 can be spaced apart and distributed around the semiconductor laser chip 30 , or the multiple first electronic components 70 and the driver chip 40 can be spaced apart and distributed on any side of the semiconductor laser chip 30 .

[0047] In order to provide a good working environment for the semiconductor laser chip 30, so as to protect the semiconductor laser chip 30 from the influence of the external environment (wherein the environmental influence may be corrosion by substances such as water and air), as shown in FIG1 , in some optional embodiments, the semiconductor package structure may further include a first support portion 80 and a first metal lens 90, wherein the first support portion 80 is located on the exposed surface of the printed circuit board 20 and surrounds the semiconductor laser chip 30, and the first metal lens 90 is located on the side of the first support portion 80 away from the printed circuit board 20, and a first sealed cavity is defined between the first metal lens 90, the first support portion 80, and the semiconductor substrate, and the semiconductor laser chip 30 is located in the first sealed cavity, thereby isolating the semiconductor laser chip 30 from external water and air. Furthermore, since the semiconductor laser chip 30 also includes the first metal lens 90, and since the metal lens itself has a strong focusing ability, after the light passes through the first metal lens 90, the relative intensity of the light received by the semiconductor laser chip 30 is also relatively high. In addition, since the distance between the super lens and the semiconductor laser chip 30 can be closer, the size of the semiconductor package structure can be made smaller.

[0048] Optionally, the first metalens 90 may employ a multivariate optical element (MOE), wherein, since the unit structure of the first metalens 90 is typically on the order of half a wavelength, the first metalens 90 may, for example, have a microstructure, which may be configured in a cylindrical, square, or diamond-shaped column, and further, by adjusting the microstructures to different shapes and sizes (including height), the first metalens 90 may achieve the purpose of achieving different phase modulation for light in different regions. For example, the height of each microstructure in the first metalens 90 may be consistent, and the gaps between adjacent microstructures may be inconsistent. Furthermore, the gaps between adjacent microstructures may be set to be smaller than the gaps on the order of a wavelength, thereby achieving diffraction of light. Through diffraction, light adjustment may be achieved, including adjusting the phase of the light and / or adjusting the angle of the light.

[0049] Furthermore, in order to measure and receive the laser light emitted by the semiconductor laser chip 30, as shown in FIG3, in some optional embodiments, the semiconductor packaging structure may include, in addition to the semiconductor substrate, the semiconductor laser chip 30 and the driver chip 40, a photodetector chip 50, wherein the photodetector chip 50 is located on the exposed surface of the printed circuit board 20 and is spaced apart from the semiconductor laser chip 30.

[0050] Furthermore, as shown in FIG3 , the semiconductor package structure in this embodiment may further include a metal substrate 60, which is located between the semiconductor laser chip 30 and the printed circuit board 20 or between the semiconductor laser chip 30 and the molded package body 10. Optionally, the metal substrate 60 may also be located between the photodetector chip 50 and the printed circuit board 20 or between the photodetector chip 50 and the molded package body 10. Further, as shown in FIG3 , the semiconductor package structure in this embodiment may further include a plurality of first electronic components 70, each of which corresponds one-to-one to the plurality of second receiving grooves in the molded package body 10, and each first electronic component 70 completely fills each corresponding second receiving groove. Further, as shown in FIG3 , the semiconductor package structure may further include the first support portion 80 and the first metalens lens 90, wherein, when the semiconductor package structure includes the first support portion 80, the first support portion 80 is spaced apart from the photodetector chip 50.

[0051] Optionally, in the case where the semiconductor substrate includes a stacked printed circuit board 20 and a molded package 10, the photodetector chip 50 may be located on a side of the printed circuit board 20 away from the exposed surface of the molded package 10 and electrically connected to the printed circuit board 20; or optionally, in the case where the semiconductor substrate includes a molded package 10 and a printed circuit board 20 located on a partial surface of the molded package 10, the photodetector chip 50 may be located on a side of the exposed surface of the molded package 10 and electrically connected to the printed circuit board 20.

[0052] In some optional embodiments, as shown in FIG4 , to make it easier for the photodetector chip 50 to receive the laser light emitted by the semiconductor laser chip 30 in a fixed pattern, a straight line passing through the center of the photodetector chip 50 and parallel to the exposed surface of the printed circuit board 20 is defined as a first centerline 140, and a straight line passing through the center of the semiconductor laser chip 30 and parallel to the exposed surface of the printed circuit board 20 is defined as a second centerline 150. In this case, the first centerline 140 and the second centerline 150 are collinear. Optionally, according to this embodiment, the depth perception efficiency of the system including the semiconductor laser chip 30 and the photodetector chip 50 can be improved. Furthermore, because the semiconductor laser chip 30 and the photodetector chip 50 are collinearly arranged, the window of the projection device corresponding to the semiconductor laser chip 30 can be reduced, thereby reducing the opening of the projection device corresponding to the semiconductor laser chip 30.

[0053] Similarly, in some optional embodiments, as shown in Figure 3, in order to make the photodetector have a better working range, the above-mentioned semiconductor packaging structure may further include a second supporting portion 120 and a second super lens head 130, wherein the above-mentioned second supporting portion 120 is located on the printed circuit board 20 and surrounds the photodetector chip 50; the above-mentioned second super lens head 130 is located on the side of the second supporting portion 120 away from the printed circuit board 20, and a second sealed cavity is provided between the second supporting portion 120, the second super lens head 130 and the semiconductor substrate, and the photodetector chip 50 is located in the second sealed cavity.

[0054] In the above embodiment, the first sealed cavity and the second sealed cavity are separated from each other. Optionally, the material of the first support portion 80 and the second support portion 120 can be a molding material. Optionally, the second metalens head 130 can adopt a multivariate optical element (MOE), wherein, since the unit structure of the second metalens head 130 is usually on the order of half a wavelength, illustratively, the second metalens head 130 can have a microstructure, which can be set to a shape such as a cylinder, a square, and a diamond column, and further, by adjusting different shapes and different sizes (including height), the second metalens head 130 can achieve the purpose of achieving different phase modulation for light in different regions. illustratively, the height of each microstructure in the second metalens head 130 can be consistent, and the gaps between adjacent microstructures are inconsistent. Further, the gaps between adjacent microstructures can be set to be smaller than the gaps on the order of a wavelength, thereby achieving diffraction of light. Through diffraction, light can be adjusted, including adjusting the phase of the light and / or adjusting the angle of the light.

[0055] Similarly, in some optional embodiments, as shown in FIG3 , the semiconductor package structure further includes a plurality of second electronic components 100. To reduce the package size of the semiconductor package structure, the molded package body 10 includes a plurality of third receiving slots. The printed circuit board 20 covers the plurality of third receiving slots, and the plurality of electronic components are positioned within the plurality of third receiving slots. Each second electronic component 100 contacts the printed circuit board 20. The plurality of second electronic components 100 correspond one-to-one to the plurality of third receiving slots. Each second electronic component 100 completely fills each third receiving slot. The photodetector chip 50 has a fourth projection on the molded package body 10, and each second electronic component 100 has a fifth projection on the molded package body 10. The fourth and fifth projections do not overlap. Alternatively, as shown in FIG3 , the driver chip 40 may be positioned within the molded package body 10 between the semiconductor laser chip 30 and the photodetector chip 50. Alternatively, the driver chip 40 may be positioned within the molded package body 10 on the side of the semiconductor laser chip 30 away from the photodetector chip 50, as shown in FIG6 .

[0056] Furthermore, in the D-ToF solution, due to the fast speed of light, the daily reception time is generally in the sub-nanosecond level, and the detector needs to respond immediately when the photon arrives. Therefore, the D-ToF solution usually selects a single-photon avalanche diode (SPAD) or an avalanche photodiode (APD). Among them, the SPAD chip is a device that can generate a response current in the sub-nanosecond time. Its working principle is to use a reverse-biased photodiode to operate in a very small voltage range that exceeds the breakdown voltage but has not yet broken down. At this time, the diode is in a very sensitive working range, so as long as there is a weak light signal, it can trigger it to generate an avalanche current, and the response speed is extremely fast. Therefore, it is easy for a single free electron to appear in the avalanche region of the SPAD chip to trigger counting, resulting in erroneous counting. The SPAD chip is greatly affected by dark noise. The inventors also found that the factors causing dark counts include free electrons generated by heat inside the detector. This phenomenon occurs in SPAD chips manufactured through manufacturing and doping processes because of the shockley-read-hall (SRH) defect inside the device, which has a stronger ability to release and capture carriers. Therefore, in deep submicron (Deep Sub-micron (DSM) CMOS has a common voltage drop requirement of higher doping concentration and smaller PN junction size, which may lead to higher defect density and stronger acceleration electric field, making the dark count effect more obvious. Therefore, in the above embodiment, the projection area of ​​the photodetector chip 50 on the printed circuit board 20 or the molded package 10 corresponds to the heat-sensitive area of ​​the photodetector chip 50. Therefore, when multiple second electronic components 100 are located in the heat-sensitive area of ​​the photodetector chip 50, the multiple second electronic components 100 will affect the photodetector chip 50, making the dark count effect of the photodetector chip 50 more obvious. Therefore, when the projection of the photodetector chip 50 on the molded package 10 is the fourth projection and the projection of each second electronic component 100 on the molded package 10 is the fifth projection, the fourth and fifth projections are not overlapped, as shown in Figures 5 and 7, thereby avoiding the second electronic components 100 being located in the heat-sensitive area of ​​the photodetector chip 50.

[0057] Optionally, when the projection of the semiconductor laser chip 30 on the molded package 10 is the first projection, the projection of the photodetector chip 50 on the molded package 10 is the fourth projection, and the projection of the driver chip 40 on the molded package 10 is the second projection, the second projection is located between the first projection (located in the dotted box between the driver chip 40 and the first electronic component 70) and the fourth projection (located in the dotted box between the driver chip 40 and the second electronic component 100), as shown in FIG5 , or the second projection is located on the side of the first projection (located in the dotted box between the driver chip 40 and the first electronic component 70) away from the fourth projection, as shown in FIG7 . Optionally, the distance between the second projection and the first projection is smaller than the distance between the second projection and the fourth projection. That is, the first electronic component 70 serves as the electronic component of the projection end in the semiconductor package structure, and the second electronic component 100 serves as the electronic component of the receiving end in the semiconductor package structure. Through the above-mentioned setting method, the first electronic component 70 and the second electronic component 100 can be set according to the principle of proximity, so that the line of the first electronic component 70 belonging to the projection end is shorter, and the line of the second electronic component 100 belonging to the receiving end is shorter, so that the impedance generated in the line is less, thereby improving the signal accuracy.

[0058] Optionally, the third projection of each first electronic component 70 on the molded package 10 may be located on a side of the first projection away from the fourth projection, and the fifth projection of each second electronic component 100 on the molded package 10 may be located on a side of the fourth projection away from the first projection. Optionally, the distance between the first and third projections is smaller than the distance between the first and fifth projections, and the distance between the fourth and fifth projections is smaller than the distance between the fourth and third projections.

[0059] The semiconductor laser chip 30 may include, but is not limited to, a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL), and a laser diode (LD), and the photodetector chip 50 may include, but is not limited to, a photodiode (PD), an avalanche photodiode (APD), and a single photon avalanche photodiode (SPAD). In some optional embodiments, since the VCSEL has advantages such as high modulation rate, good coupling characteristics with the optical front, low energy consumption, and low production cost, and the single electron avalanche diode has advantages such as high sensitivity, high resolution, and low noise, the semiconductor laser chip 30 may be a VCSEL, and the photodetector chip 50 may be a single electron avalanche diode.

[0060] From the above description, it can be seen that the above embodiments of the present disclosure achieve the following technical effects:

[0061] A molded package is used as a heat dissipation substrate in a semiconductor package structure, with a printed circuit board positioned on a portion of the surface of the molded package. This dissipates heat generated by semiconductor devices on the printed circuit board and prevents the heat from damaging the semiconductor devices. A semiconductor laser chip electrically connected to the printed circuit board is positioned on an exposed surface of the printed circuit board on a side remote from the molded package and / or on an exposed surface of the molded package. A driver chip is positioned within a first receiving groove within the molded package, contacting the printed circuit board. As the molded package, which is formed to encapsulate the semiconductor device, covers the driver chip, the stability of the driver chip within the semiconductor package structure is enhanced, improving the packaging strength of the driver chip. Furthermore, since the driver chip is completely positioned within the first receiving groove within the molded package, the driver chip and the molded package are integrated. This prevents the driver chip and the heat dissipation substrate of the semiconductor package structure from occupying different packaging areas within the semiconductor package structure, allowing the driver chip and the molded package to share a common area within the semiconductor package structure, thereby reducing the size of the semiconductor package structure.

[0062] The foregoing description is merely a preferred embodiment of the present disclosure and is not intended to limit the present disclosure. Those skilled in the art will readily appreciate that various modifications and variations are possible. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present disclosure shall be included within the scope of protection of the present disclosure.

Claims

1. A semiconductor packaging structure, comprising: A semiconductor substrate, comprising a printed circuit board and a molded package, wherein the printed circuit board is located on a portion of the surface of the molded package, and the molded package has a first receiving groove, and the printed circuit board covers the first receiving groove; a semiconductor laser chip, located on one side of the exposed surface of the printed circuit board or on one side of the exposed surface of the molded package, and the semiconductor laser chip is electrically connected to the printed circuit board; A driving chip is located in the first receiving groove and is electrically connected to the printed circuit board, wherein the driving chip completely fills the first receiving groove.

2. The semiconductor package structure according to claim 1, wherein: The semiconductor laser chip has a first projection on the molded package, and the driving chip has a second projection on the molded package, and the first projection does not overlap with the second projection.

3. The semiconductor package structure according to claim 1, wherein: Also includes: A metal substrate is located between the semiconductor laser chip and the printed circuit board or between the semiconductor laser chip and the molded package, wherein when the semiconductor laser chip is located on one side of the exposed surface of the printed circuit board, the metal substrate is located between the semiconductor laser chip and the printed circuit board, and when the semiconductor laser chip is located on one side of the exposed surface of the molded package, the metal substrate is located between the semiconductor laser chip and the molded package.

4. The semiconductor package structure according to claim 1, wherein: The molded package body has a plurality of second receiving grooves, the printed circuit board covers the plurality of second receiving grooves, and the semiconductor package structure further includes: A plurality of first electronic components are located in the plurality of second containing grooves, each of the first electronic components is electrically connected to the printed circuit board, the plurality of first electronic components correspond to the plurality of second containing grooves one by one, each of the first electronic components completely fills each of the second containing grooves, and the semiconductor excitation The optical device chip has a first projection on the molded package, and each of the first electronic components has a third projection on the molded package, and the first projection and the third projection do not overlap.

5. The semiconductor package structure according to claim 1, wherein: Also includes: A first supporting portion is located on the exposed surface of the printed circuit board and surrounds the semiconductor laser chip; The first metal lens is located on a side of the first support portion away from the printed circuit board, and a first sealed cavity is provided between the first metal lens, the first support portion and the semiconductor substrate, and the semiconductor laser chip is located in the first sealed cavity.

6. The semiconductor package structure according to any one of claims 1 to 5, wherein: Also includes: The photodetector chip is located on the exposed surface of the printed circuit board and is spaced apart from the semiconductor laser chip. When the semiconductor packaging structure includes a first supporting portion, the first supporting portion is spaced apart from the photodetector chip.

7. The semiconductor package structure according to claim 6, wherein: A straight line passing through the center of the photodetector chip and parallel to the exposed surface of the printed circuit board is a first center line, a straight line passing through the center of the semiconductor laser chip and parallel to the exposed surface of the printed circuit board is a second center line, and the first center line and the second center line are collinear.

8. The semiconductor package structure according to claim 6, wherein: Also includes: A second supporting portion is located on the printed circuit board and surrounds the photodetector chip; The second super lens is located on the side of the second support portion away from the printed circuit board, and a second sealed cavity is provided between the second support portion, the second super lens and the semiconductor substrate, and the photodetector chip is located in the second sealed cavity.

9. The semiconductor package structure according to claim 6, wherein: The molded package body has a plurality of third receiving grooves, the printed circuit board covers the plurality of third receiving grooves, and the semiconductor package structure further includes: A plurality of second electronic components are located in the plurality of third receiving grooves, each of the second electronic components is in contact with the printed circuit board, the plurality of second electronic components correspond one-to-one to the plurality of third receiving grooves, each of the second electronic components completely fills each of the third receiving grooves, and the photodetector chip has a fourth projection on the molded package body, each of the second electronic components has a fifth projection on the molded package body, and the fourth projection and the fifth projection do not overlap.

10. The semiconductor package structure according to claim 6, wherein: The semiconductor laser chip includes a vertical cavity surface emitting laser, and the photodetector chip includes a single electron avalanche diode.

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