Light device

Abstract

A light device according to an embodiment of the present disclosure comprises: a light element array layer having a plurality of light elements; and a light control array layer having a plurality of light control units. A laminate constituted by the light element array layer and the light control array layer has a metal layer at a boundary portion of two adjacent pixels when the light elements and the light control units facing one another are pixels. The metal layer is provided within the layer between the light elements and the light control units, the layer including a bonding surface of the element array layer and the light control array layer.

Description

optical device

[0001] The present disclosure relates to optical devices.

[0002] Various micro light-emitting devices have been proposed so far (see, for example, Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2020-181980

[0004] However, in a light-emitting device that incorporates a large number of the above-mentioned micro light-emitting elements, it is required to suppress leakage of emitted light into adjacent pixels. Similarly, in a light-receiving device that incorporates a large number of micro light-receiving elements, it is also required to suppress leakage of external light into adjacent pixels. It is desirable to provide an optical device that can suppress light leakage into adjacent pixels.

[0005] An optical device according to a first aspect of the present disclosure includes an optical element array layer in which a plurality of light-emitting elements or light-receiving elements are arranged as optical elements, and a drive substrate including a drive circuit for driving the optical elements. The optical device further includes a light control array layer in which a plurality of light control units are arranged, each capable of controlling light emitted from the light-emitting elements and outputting it to the outside, or controlling light incident from the outside and outputting it to the light-receiving elements. The optical elements and light control units are arranged in positions facing each other. The optical element array layer and the light control array layer are bonded to each other. A laminate formed by the optical element array layer and the light control array layer has a metal layer at the boundary between two adjacent pixels when the opposing optical elements and light control units are pixels. The metal layer is provided in a layer between the optical elements and the light control units, including the bonding surface of the element array layer and the light control array layer.

[0006] In the optical device according to the first aspect of the present disclosure, a metal layer is provided in a layer between the optical element and the light control unit, at a boundary between two adjacent pixels and including a bonding surface between the optical element array layer and the light control array layer. For example, a portion of light emitted from the light-emitting element is reflected by the metal layer, thereby suppressing leakage of the light emitted from the light-emitting element to an adjacent pixel. Furthermore, for example, a portion of light incident from the outside is reflected by the metal layer, thereby suppressing leakage of the light incident from the outside to an adjacent pixel.

[0007] The method for manufacturing an optical device according to the second aspect of the present disclosure includes the following three steps: (1) preparing an optical element array layer in which a plurality of light-emitting elements or light-receiving elements are arranged as optical elements, and a first metal layer is provided at the boundary between two adjacent optical elements; (2) preparing a light-controlling array layer in which a plurality of light control units are arranged, each capable of controlling light emitted from a light-emitting element and outputting it to the outside, or controlling light incident from the outside and outputting it to a light-receiving element, and a second metal layer is provided at the boundary between two adjacent optical elements; and (3) bonding the optical element array layer and the light-controlling array layer to each other in a state in which the optical element array layer and the light-controlling array layer are opposed to each other, so that the optical elements and light control units face each other and the first metal layer and the second metal layer face each other.

[0008] In a manufacturing method of an optical device according to a second aspect of the present disclosure, the optical element array layer and the light control array layer are bonded to each other so that a first metal layer provided at the boundary between two adjacent optical elements faces a second metal layer provided at the boundary between two adjacent optical elements. As a result, for example, a portion of light emitted from the light-emitting element is reflected by the metal layer, thereby suppressing leakage of light emitted from the light-emitting element to adjacent pixels. Furthermore, for example, a portion of light incident from the outside is reflected by the metal layer, thereby suppressing leakage of light incident from the outside to adjacent pixels.

[0009] FIG. 1 is a diagram illustrating an example cross-sectional configuration of a light-emitting device according to a first embodiment of the present disclosure. FIG. 2 is a diagram illustrating an example cross-sectional configuration of the light-emitting element of FIG. 1 and its vicinity. FIG. 3 is a diagram illustrating an example cross-sectional configuration as viewed from the direction of arrows A-A in FIG. 2. FIG. 4 is a diagram illustrating an example cross-sectional configuration when the electrode layer and the insulating layer are omitted from FIG. 3. FIG. 5 is a diagram illustrating an example cross-sectional configuration as viewed from the direction of arrows B-B in FIG. 2. FIG. 6 is a diagram illustrating an example cross-sectional configuration when the insulating layer is omitted from FIG. 5. FIG. 7A is a diagram illustrating an example cross-sectional configuration for explaining an example of a manufacturing process for the light-emitting device of FIG. 1. FIG. 7B is a diagram illustrating an example cross-sectional configuration at a step subsequent to FIG. 7A. FIG. 7C is a diagram illustrating an example cross-sectional configuration at a step subsequent to FIG. 7B. FIG. 7D is a diagram illustrating an example cross-sectional configuration at a step subsequent to FIG. 7C. FIG. 7E is a diagram illustrating an example cross-sectional configuration at a step subsequent to FIG. 7D. FIG. 7F is a diagram illustrating an example cross-sectional configuration at a step subsequent to FIG. 7E. FIG. 7G is a diagram illustrating an example cross-sectional configuration at a step subsequent to FIG. 7F. 7H is a diagram illustrating an example of a cross-sectional configuration at a step subsequent to FIG. 7G. FIG. 7I is a diagram illustrating an example of a cross-sectional configuration at a step subsequent to FIG. 7H. FIG. 7J is a diagram illustrating an example of a cross-sectional configuration at a step subsequent to FIG. 7I. FIG. 7K is a diagram illustrating an example of a cross-sectional configuration at a step subsequent to FIG. 7J. FIG. 7L is a diagram illustrating an example of a cross-sectional configuration at a step subsequent to FIG. 7K. FIG. 7M is a diagram illustrating an example of a cross-sectional configuration at a step subsequent to FIG. 7L. FIG. 7N is a diagram illustrating an example of a cross-sectional configuration at a step subsequent to FIG. 7M. FIG. 7O is a diagram illustrating an example of a cross-sectional configuration at a step subsequent to FIG. 7N. FIG. 7P is a diagram illustrating an example of a cross-sectional configuration at a step subsequent to FIG. 7O. FIG. 7Q is a diagram illustrating an example of a cross-sectional configuration at a step subsequent to FIG. 7P. FIG. 7R is a diagram illustrating an example of a cross-sectional configuration at a step subsequent to FIG. 7Q. FIG. 7S is a diagram illustrating an example of a cross-sectional configuration at a step subsequent to FIG. 7R. FIG. 7T is a diagram illustrating an example of a cross-sectional configuration at a step subsequent to FIG. 7T. FIG. 7U is a diagram illustrating an example of a cross-sectional configuration at a step subsequent to FIG. 7U. Fig. 8 is a diagram showing an example of a planar layout of a plurality of pixels in the light-emitting device of Fig. 1. Fig. 9 is a diagram showing a modified cross-sectional configuration of the light-emitting device of Fig. 1. Fig. 10 is a diagram showing a modified cross-sectional configuration of the light-emitting device of Fig. 1. Fig. 11 is a diagram showing a modified cross-sectional configuration of the light-emitting element of Fig. 2 and its vicinity. Fig. 12 is a diagram showing a modified cross-sectional configuration of the light-emitting element of Fig. 2 and its vicinity.FIG. 13 is a diagram illustrating a modified cross-sectional configuration of the light-emitting device of FIG. 1 . FIG. 14 is a diagram illustrating a modified cross-sectional configuration in the direction of arrows A-A in FIG. 2 . FIG. 15 is a diagram illustrating an example cross-sectional configuration when the electrode layer and the insulating layer are omitted from FIG. 14 . FIG. 16 is a diagram illustrating a modified cross-sectional configuration in the direction of arrows B-B in FIG. 2 . FIG. 17 is a diagram illustrating an example cross-sectional configuration when the insulating layer is omitted from FIG. 16 . FIG. 18 is a diagram illustrating a modified cross-sectional configuration of the light-emitting device of FIG. 1 . FIG. 19 is a diagram illustrating a modified planar layout of a plurality of pixels in the light-emitting device of FIG. 1 . FIG. 20 is a diagram illustrating an example cross-sectional configuration of a light-receiving device according to a second embodiment of the present disclosure.

[0010] Preferred embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. In this specification and drawings, components having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0011] Furthermore, in this specification and drawings, multiple components having substantially the same or similar functional configurations may be distinguished by adding different numbers after the same reference numeral. However, if there is no need to particularly distinguish between multiple components having substantially the same or similar functional configurations, only the same reference numeral will be used. Furthermore, similar components in different embodiments may be distinguished by adding different letters after the same reference numeral. However, if there is no need to particularly distinguish between similar components, only the same reference numeral will be used.

[0012] In addition, the drawings referred to in the following description are intended to facilitate the description and understanding of one embodiment of the present disclosure, and for clarity, the shapes, dimensions, ratios, etc. shown in the drawings may differ from the actual shapes, dimensions, ratios, etc. Furthermore, the light-emitting devices shown in the drawings may be appropriately modified in design taking into account the following description and known technologies. In addition, in descriptions using cross-sectional views of the light-emitting device, the vertical direction of the stacked structure of the light-emitting device corresponds to the relative direction when the incident surface on which light is incident on the light-emitting device is set as the top, and may differ from the vertical direction according to the actual gravitational acceleration.

[0013] Furthermore, in the following explanation, expressions relating to size and shape do not only mean values ​​identical to mathematically defined numerical values ​​or geometrically defined shapes, but also include shapes that have industrially acceptable differences in the manufacturing process of the light-emitting device or shapes similar to those shapes.

[0014] Furthermore, in the following description of the circuit configuration, unless otherwise specified, "connection" means electrical connection between multiple elements. In addition, in the following description, "connection" includes not only direct and electrical connection between multiple elements, but also indirect and electrical connection via other elements.

[0015] The description will be given in the following order: 1. First embodiment (light-emitting device) 1-1. Configuration of light-emitting device 1-2. Method of manufacturing light-emitting device 1-3. Actions and effects 2. Modifications of first embodiment (light-emitting device) 2-1. Modification A 2-2. Modification B 2-3. Modification C 2-4. Modification D 2-5. Modification E 2-6. Modification F 2-7. Modification G 2-8. Modification H 2-9. Modification I 3. Second embodiment (light-receiving device) 3-1. Configuration of light-receiving device 3-2. Actions and effects 4. Modifications of second embodiment (light-receiving device)

[0016] 1. First embodiment [Configuration] A light emitting device 1 according to a first embodiment of the present disclosure will be described. Fig. 1 shows an example of a cross-sectional configuration of the light emitting device 1 according to the first embodiment of the present disclosure. Fig. 2 shows an enlarged cross-sectional configuration example of a portion (a light emitting element 11 described below and its vicinity) of the light emitting device 1 shown in Fig. 1.

[0017] (1-1. Configuration of the Light-Emitting Device) The light-emitting device 1 includes a display section 100A in which a plurality of pixels (for example, red pixels Pr, green pixels Pg, and blue pixels Pb) are arranged in a two-dimensional array, and a frame section 100B provided around the display section 100A. The light-emitting device 1 includes, for example, a light-emitting section 10 and a wavelength conversion section 20 laminated in this order on a drive substrate 30. The area where the light-emitting section 10 and the wavelength conversion section 20 are bonded to each other is a bonding surface BI1, and the area where the light-emitting section 10 and the drive substrate 30 are bonded to each other is a bonding surface BI2. The outermost surface of the wavelength conversion section 20 is a light-emitting surface S1. The plurality of pixels are arranged in a two-dimensional array in a planar view, for example, in a matrix or honeycomb pattern.

[0018] In this specification, "planar view" refers to viewing a plane having a normal to the stacking direction of the light-emitting device 1 from the stacking direction of the light-emitting device 1. The light-emitting section 10 corresponds to a specific example of an "optical element array layer" according to an embodiment of the present disclosure. The wavelength conversion section 20 corresponds to a specific example of a "light control array layer" according to an embodiment of the present disclosure. The driving substrate 30 corresponds to a specific example of a "driving substrate" according to an embodiment of the present disclosure. The bonding surface BI2 corresponds to a specific example of a "bonding surface" according to an embodiment of the present disclosure. The laminate formed by the light-emitting section 10 and the wavelength conversion section 20 corresponds to a specific example of a "laminate" according to an embodiment of the present disclosure.

[0019] First, the light emitting unit 10 will be described.

[0020] The light-emitting unit 10 has a plurality of light-emitting elements 11. The light-emitting elements 11 correspond to a specific example of an "optical element" or "light-emitting element" according to an embodiment of the present disclosure. The plurality of light-emitting elements 11 are provided one for each pixel. The light-emitting elements 11 are solid-state light-emitting elements that emit light in a predetermined wavelength band toward the light-emitting surface S1, such as LEDs (light-emitting diodes). The light-emitting elements 11 refer to elements cut from a wafer used for crystal growth, and are not packaged elements covered with molded resin or the like. The light-emitting elements 11 are, for example, 5 μm or more and 100 μm or less in size, and are so-called micro-LEDs.

[0021] As shown in FIG. 2 , the light-emitting element 11 includes an active layer 112 and an n-type compound semiconductor layer 111 and a p-type compound semiconductor layer 113 sandwiching the active layer 112. The light-emitting element 11 is a mesa-shaped light-emitting element having the compound semiconductor layer 113 at its top. Hereinafter, the mesa-shaped portion of the light-emitting element 11 will be referred to as a mesa portion. The light-emitting element 11 is configured to emit emitted light in the upward direction of the drawing (i.e., toward the wavelength conversion unit 20) by light reflection by the adjacent reflective layer 115. The top of the mesa portion faces downward of the drawing (i.e., toward the drive substrate 30), as shown in FIGS. 1 and 2 . The mesa portion has, for example, a forward-tapered side surface with respect to the electrode layer 13 described below. The angle of the side surface of the mesa portion is, for example, 45° or more and less than 90°. Note that the side surface of the mesa portion may be perpendicular to the electrode layer 13 described below.

[0022] The light emitting element 11 (active layer 112, compound semiconductor layer 111, and compound semiconductor layer 113) is, for example, a GaN-based compound semiconductor. Examples of GaN-based compound semiconductors include GaN, AlGaN, InGaN, and AlInGaN. The active layer 112 is capable of emitting light in the blue region with an emission wavelength of 430 nm or more and 500 nm or less. The active layer 112 may be capable of emitting light in the ultraviolet region with an emission wavelength of 350 nm or more and 430 nm or less. The active layer 112 has, for example, a bulk structure, a single quantum well structure, or a quantum well structure.

[0023] The light-emitting unit 10 has an electrode layer 114 and a plug 12a for each pixel. The electrode layer 114 is disposed on the top of the mesa portion (compound semiconductor layer 113). The electrode layer 114 is in contact with and electrically connected to the top of the mesa portion (compound semiconductor layer 113). The plug 12a is a contact plug disposed opposite the electrode layer 114. One end of the plug 12a is in contact with the electrode layer 114. The plug 12a is electrically connected to the electrode layer 114 and electrically connected to the compound semiconductor layer 113 via the electrode layer 114. The other end of the plug 12a is in contact with an extraction electrode 16 (described below). The plug 12a is electrically connected to the extraction electrode 16 and electrically connected to the drive substrate 30 via the extraction electrode 16. The electrode layer 114 is a transparent conductive layer that is transparent to the light emitted from the light-emitting element 11.

[0024] The light-emitting unit 10 further includes an electrode layer 13 shared by multiple pixels. The electrode layer 13 is disposed on the bottom of the mesa portion (compound semiconductor layer 111). The electrode layer 13 is in contact with the bottom of the mesa portion (compound semiconductor layer 111) and is electrically connected to the bottom of the mesa portion (compound semiconductor layer 111). The electrode layer 13 is a transparent conductive layer that is transparent to the light emitted from the light-emitting element 11. The electrode layer 13 extends to the frame portion 100B.

[0025] The electrode layers 114 and 13 are made of, for example, an indium-based transparent conductive material, a tin-based transparent conductive material, or a zinc-based transparent conductive material. Examples of the indium-based transparent conductive material include indium-tin oxide (ITO, Indium Tin Oxide, Sn-doped In ２ O ３ , including crystalline ITO and amorphous ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium-doped gallium zinc oxide (IGZO, In-GaZnO ４ ), IFO (F-doped In ２ O ３ ), ITiO (Ti-doped In２ O ３ ), InSn, or InSnZnO. Examples of tin-based transparent conductive materials include tin oxide (SnO ２ ), ATO (Sb-doped SnO ２ ), FTO (F-doped SnO ２ Examples of zinc-based transparent conductive materials include zinc oxide (including ZnO, Al-doped ZnO (AZO), and B-doped ZnO), gallium-doped zinc oxide (GZO), and AlMgZnO (aluminum oxide and magnesium oxide-doped zinc oxide). The electrode layers 114 and 13 may be, for example, a single layer made of the above-mentioned material, or may be a laminated film made of materials selected from the above-mentioned materials.

[0026] The plug 12a is embedded in the insulating layer 12 together with the light-emitting element 11. The plug 12a is composed of, for example, a columnar metal member formed to fill a trench formed in the insulating layer 12. The insulating layer 12 is formed of, for example, silicon oxide (SiO) or silicon nitride (SiN). The plug 12a is composed of, for example, a metal or metal compound mainly composed of Ti, W, Al, Ni, Ta, Cu, Ag, or Au. The plug 12a is formed by, for example, chemical vapor deposition (CVD) or atomic layer deposition (ALD). The plug 12a may be, for example, a single layer composed of the above-mentioned materials, or a laminated film selected from the above-mentioned materials.

[0027] The light-emitting section 10 further has a reflective layer 115 at a location facing the plurality of light-emitting elements 11. The reflective layer 115 is disposed on the upper surface of the mesa section at a location not in contact with the plug 12a and at a location facing the side surface of the mesa section. The reflective layer 115 is formed to cover the light-emitting elements 11 from the location at the top of the light-emitting element 11 (mesa section) not in contact with the plug 12a to the side surface of the light-emitting element 11 (mesa section). The reflective layer 115 is, for example, an electrically floating layer that is not in contact with the electrode layers 114 and 13.

[0028] The reflective layer 115 is made of a material having a reflectance higher than that of the electrode layer 114 (reflectance for the wavelength of light emitted from the light emitting element 11). The reflective layer 115 is made of a metal or metal compound containing, for example, Ag, Al, Ti, W, Ni, Ta, Cu, or Au as a main component. An insulating layer 116 is provided between the reflective layer 115 and the electrode layer 114. The insulating layer 116 is a layer for electrically isolating the reflective layer 115 and the electrode layer 114 from each other. The insulating layer 116 is made of, for example, silicon oxide (SiO), silicon nitride (SiN), or the like.

[0029] The light-emitting unit 10 further includes an insulating layer 14a and a light-shielding layer 14b in contact with the surface of the electrode layer 13 facing the wavelength conversion unit 20. The insulating layer 14a corresponds to a specific example of a "metal layer" or "first insulating layer" according to an embodiment of the present disclosure. The light-shielding layer 14b corresponds to a specific example of a "metal layer" or "first metal layer" according to an embodiment of the present disclosure. As shown in FIGS. 1 and 2, for example, the light-shielding layer 14b is provided in a layer between the light-emitting element 11 and the wavelength conversion layer 21 (described later), at the boundary between two adjacent pixels and including the bonding surface BI1 between the light-emitting unit 10 and the wavelength conversion unit 20. The light-shielding layer 14b is composed of a metal or alloy containing, for example, Cu, Au, Al, or In. As shown in FIGS. 1 and 2, for example, the insulating layer 14a is provided at a position on the bonding surface BI1 that does not face the light-shielding layer 14b. The insulating layer 14a is composed of, for example, an oxide layer (e.g., a silicon oxide (SiO) layer), a nitride layer (e.g., a silicon nitride (SiN) layer), or a stack of an oxide layer and a nitride layer (e.g., a stack of a silicon oxide (SiO) layer and a silicon nitride (SiN) layer). In the light-emitting unit 10, the surfaces of the insulating layer 14a and the light-shielding layer 14b are arranged in the same plane. The surfaces of the insulating layer 14a and the light-shielding layer 14b form a bonding surface BI1, which is flat.

[0030] The light-shielding layer 14b is provided so as to completely (i.e., continuously and without breaks) surround one pixel in plan view, as shown in, for example, Figures 3 and 4. Figure 3 shows an example of a cross-sectional configuration as viewed from the direction of the arrows A-A in Figure 2. Figure 4 shows an example of a cross-sectional configuration when the electrode layer 13 and the insulating layer 14a are omitted from Figure 3. The light-shielding layer 14b is shared by multiple pixels, and is provided so as to completely surround the insulating layer 14a in each pixel in plan view.

[0031] The light-emitting section 10 further includes a wiring layer 15. The wiring layer 15 is disposed between the plurality of light-emitting elements 11 and the drive substrate 30. The wiring layer 15 includes an interlayer insulating film 15a and wiring 15b provided within the interlayer insulating film 15a. The wiring layer 15 further includes, for each pixel, an extraction electrode 16 that is exposed on the surface of the interlayer insulating film 15a that faces the light-emitting elements 11. The extraction electrode 16 is connected to the plug 12a.

[0032] The wiring layer 15 further includes pad electrodes 18 and 19 exposed on the surface of the interlayer insulating film 15a facing the drive substrate 30, and a wiring layer 17 exposed on the surface of the interlayer insulating film 15a facing the light-emitting element 11. The wiring layer 15 includes a pad electrode 18 for each pixel. The wiring 15b includes, for example, a wiring that connects the lead electrode 16 and the pad electrode 18 for each pixel. The wiring 15b further includes, for example, a wiring that connects the wiring layer 17 and the pad electrode 19. The wiring 15b, the lead electrode 16, and the wiring layer 17 are made of, for example, a metal or metal compound mainly composed of Ti, W, Al, Ni, Ta, Cu, Ag, or Au. The pad electrodes 18 and 19 are made of, for example, Cu.

[0033] Next, the wavelength conversion section 20 will be described.

[0034] The wavelength conversion unit 20 is stacked on the light-emitting side of the light-emitting unit 10. The wavelength conversion unit 20 has multiple wavelength conversion layers 21R, 21G, and 21B arranged two-dimensionally. Each of the multiple wavelength conversion layers 21R, 21G, and 21B is provided for each pixel, one at a location facing each light-emitting element 11. The wavelength conversion unit 20 has an insulating layer 22 with openings (openings H4, described below) provided at locations facing each light-emitting element 11, and multiple wavelength conversion layers 21R, 21G, and 21B are provided in each opening (opening H4) of the insulating layer 22. The inner walls of each opening (opening H4) of the insulating layer 22 are in contact with the wavelength conversion layers 21R, 21G, and 21B. A protective layer 25 is provided on the light-emitting surface S1 side of the insulating layer 22, and an on-chip lens layer 26 is provided on the protective layer 25. The insulating layer 22 and the protective layer 25 are formed of, for example, SiO, SiN, SiON, TiO, AlO, TaO, SiOC, or SiOCN.

[0035] In the display unit 100A, a region including the wavelength conversion layer 21R and the light-emitting element 11 facing each other in a planar view is a red pixel Pr. Similarly, a region including the wavelength conversion layer 21G and the light-emitting element 11 facing each other in a planar view is a green pixel Pg, and a region including the wavelength conversion layer 21B and the light-emitting element 11 facing each other in a planar view is a blue pixel Pb.

[0036] The wavelength conversion unit 20 has a reflective layer 23. The reflective layer 23 is provided, for example, at the boundary between adjacent pixels, as shown in FIGS. 1 and 2 . The reflective layer 23 is provided in a position contacting the side surface within each opening (opening H4) of the insulating layer 22. The reflective layer 23 is intended to suppress color mixing due to light leakage between pixels (red pixel Pr, green pixel Pg, and blue pixel Pb). The reflective layer 23 has, for example, a honeycomb structure (see FIG. 6 described below). The lower end of the reflective layer 23 is in contact with, for example, the insulating layer 24a described below. The upper end (top) of the reflective layer 23 is in contact with, for example, the protective layer 25 and is wider than the lower end of the reflective layer 23. The reflective layer 23 may have, for example, a lattice structure.

[0037] The reflective layer 23 is intended to efficiently extract, from the light emitting surface S1, the colored light emitted from the light emitting element 11 and converted in the wavelength conversion layers 21R, 21G, and 21B. The reflective layer 23 is provided in contact with the side surfaces of the wavelength conversion layers 21R, 21G, and 21B. The reflective layer 23 is configured to reflect the light emitted from the light emitting element 11 and the light generated by wavelength conversion in the wavelength conversion layers 21R, 21G, and 21B. The reflective layer 23 is made of a metal material having optical reflectivity. Examples of metal materials that form the reflective layer 23 include metals with high reflectivity in the visible light range. Specific examples of such materials include metals or alloys containing Ag, Al, Cu, Au, Pt, or Rh.

[0038] The wavelength conversion layer 21 is capable of converting light emitted from the plurality of light-emitting elements 11 into a desired wavelength (for example, red (R), green (G), or blue (B)) and emitting the converted light. Specifically, the red pixel Pr is provided with a red wavelength conversion layer 21R that converts light emitted from the light-emitting elements 11 into light in a red wavelength band (red light), the green pixel Pg is provided with a green wavelength conversion layer 21G that converts light emitted from the light-emitting elements 11 into light in a green wavelength band (green light), and the blue pixel Pb is provided with a blue wavelength conversion layer 21B that converts light emitted from the light-emitting elements 11 into light in a blue wavelength band (blue light).

[0039] Each wavelength conversion layer 21R, 21G, 21B can be formed using quantum dots corresponding to each color. Specifically, when red light is obtained, the quantum dots can be selected from, for example, InP, GaInP, InAsP, CdSe, CdZnSe, CdTeSe, or CdTe. When green light is obtained, the quantum dots can be selected from, for example, InP, GaInP, ZnSeTe, ZnTe, CdSe, CdZnSe, CdS, or CdSeS. When blue light is obtained, the quantum dots can be selected from, for example, ZnSe, ZnTe, ZnSeTe, CdSe, CdZnSe, CdS, CdZnS, and CdSeS. Note that when blue light is emitted from the light-emitting element 11 as described above, the blue wavelength conversion layer 23B may be formed from a light-transmitting resin layer.

[0040] The protective layer 25 is for protecting the surface of the light-emitting device 1 and is formed of, for example, silicon oxide (SiO) or silicon nitride (SiN). A wavelength selection layer may be provided within the protective layer 25, spanning the red pixel Pr and the green pixel Pg. The wavelength selection layer selectively reflects, for example, light in the blue band (blue light), thereby improving the color purity of the red light and green light extracted from the red pixel Pr and the green pixel Pg, respectively.

[0041] The on-chip lens layer 26 is provided so as to cover the entire surfaces of the display unit 100A and the frame unit 100B. The on-chip lens layer 26 is made of a light-transmitting material, and is made of, for example, a single-layer film made of any of silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiCN), etc., or a stacked film made of two or more of these materials.

[0042] The wavelength conversion unit 20 further includes an insulating layer 24a and a light-shielding layer 24b in contact with the surfaces of the wavelength conversion layer 21, the insulating layer 22, and the reflective layer 23 facing the light-emitting unit 10. The insulating layer 24a corresponds to a specific example of a "metal layer" or "second insulating layer" according to an embodiment of the present disclosure. The light-shielding layer 24b corresponds to a specific example of a "metal layer" or "second metal layer" according to an embodiment of the present disclosure. As shown in FIGS. 1 and 2 , the light-shielding layer 24b is provided in a layer between the light-emitting element 11 and the wavelength conversion layer 21, at the boundary between two adjacent pixels, including the bonding surface BI1 between the light-emitting unit 10 and the wavelength conversion unit 20. The light-shielding layer 24b is in contact with the surfaces of the insulating layer 22 and the reflective layer 23 facing the light-emitting unit 10, and is also in contact with the surface of the light-shielding layer 14b of the light-emitting unit 10. The light-shielding layer 24b is made of a metal or alloy containing, for example, Cu, Au, Al, or In.

[0043] As shown in FIGS. 1 and 2 , the insulating layer 24a is provided at a position on the bonding surface BI1 that does not face the light-shielding layer 24b. The insulating layer 24a is in contact with the surface of the wavelength conversion layer 21 on the light-emitting section 10 side and is also in contact with the surface of the insulating layer 14a of the light-emitting section 10. The insulating layer 24a is composed of, for example, an oxide layer (e.g., a silicon oxide (SiO) layer), a nitride layer (e.g., a silicon nitride (SiN) layer), or a stack of an oxide layer and a nitride layer (e.g., a stack of a silicon oxide (SiO) layer and a silicon nitride (SiN) layer). The materials of the insulating layer 14a and the insulating layer 24a may be the same or different from each other. The materials of the light-shielding layer 14b and the light-shielding layer 24b may be the same or different from each other.

[0044] In the wavelength conversion unit 20, the surfaces of the insulating layer 24a and the light-shielding layer 24b are arranged in the same plane. The surfaces including the insulating layer 24a and the light-shielding layer 24b form a bonding surface BI1, which is a flat surface. In other words, the light-shielding layer 14b of the light-emitting unit 10 and the light-shielding layer 24b of the wavelength conversion unit 20 are bonded to each other at the bonding surface BI1. Furthermore, the insulating layer 14a of the light-emitting unit 10 and the insulating layer 24a of the wavelength conversion unit 20 are bonded to each other at the bonding surface BI1.

[0045] The light-shielding layer 24b is provided so as to completely (i.e., continuously and without breaks) surround one pixel in plan view, as shown in, for example, Figures 5 and 6. Figure 5 shows an example of a cross-sectional configuration as viewed from the direction of arrows B-B in Figure 2. Figure 6 shows an example of a cross-sectional configuration when the insulating layer 24a is omitted from Figure 5. The light-shielding layer 24b is shared by multiple pixels, and is provided so as to completely surround the insulating layer 24a in each pixel in plan view.

[0046] The frame portion 100B is provided with an opening H1 that penetrates the insulating layer 12 and reaches the wiring layer 17, and an opening H2 that penetrates the on-chip lens layer 26, the protective layer 25, and the insulating layer 22 and reaches the wiring layer 17. The wiring layer 17 exposed at the bottom of the opening H1 is used as a connection electrode with the drive circuit 32 in the drive substrate 30. The wiring layer 17 exposed at the bottom of the opening H2 is used as a connection electrode connected to the outside. A portion of the light-shielding layer 14b is embedded in the opening H1 and is in contact with the wiring layer 17 exposed at the bottom of the opening H1. In other words, the opening H1 and a portion of the light-shielding layer 14b form a through via. A portion of the wiring layer 17 is embedded in the opening H2 and is in contact with the wiring layer 17 exposed at the bottom of the opening H2. In other words, the opening H2 and a portion of the wiring layer 17 form a through via.

[0047] Next, the drive substrate 30 will be described.

[0048] The drive substrate 30 includes a drive circuit 32 that drives the light-emitting elements 11 arranged in the display unit 100A. The drive substrate 30 is positioned opposite the wavelength conversion layers 21R, 21G, and 21B across the light-emitting elements 11. The drive substrate 30 includes a support substrate 31 made of, for example, silicon (Si) and a wiring layer 33 provided on the support substrate 31. The wiring layer 33 includes an interlayer insulating film 34 and vertical wirings 35 and 37 embedded in the interlayer insulating film 34. The vertical wiring 35 electrically connects the extraction electrode 16 to the drive circuit 32. The vertical wiring 37 electrically connects a pad electrode 38 to the drive circuit 32. The vertical wirings 35 and 37 include, for example, vias. The interlayer insulating film 34 includes pad electrodes 36 and 38 exposed on the surface of the wiring layer 15. The pad electrode 36 is in contact with the vertical wiring 35 and is bonded to the pad electrode 18. The pad electrode 38 is joined to the pad electrode 19 .

[0049] The interlayer insulating film 34 is made of, for example, silicon oxide (SiO) or silicon nitride (SiN). The vertical wirings 35 and 37 are made of, for example, a metal or alloy containing Cu, Al, W, or Ag. The pad electrodes 36 and 38 are made of, for example, Cu.

[0050] (1-2. Manufacturing Method of Light-Emitting Device) Next, a manufacturing method of the light-emitting device 1 will be described. Fig. 7A shows an example of a cross-sectional structure for explaining an example of a manufacturing process of the light-emitting device 1. Figs. 7B to 7U show examples of cross-sectional structures in steps subsequent to Fig. 7A.

[0051] First, using the substrate 210 as a growth substrate, the compound semiconductor layer 111, active layer 112, and compound semiconductor layer 113 are formed by epitaxial crystal growth using, for example, metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). Subsequently, the electrode layer 114 is formed on the compound semiconductor layer 113 by, for example, chemical vapor deposition (CVD). Next, the electrode layer 114, compound semiconductor layer 113, active layer 112, and compound semiconductor layer 111 are selectively etched by, for example, dry etching using the insulating layer as a mask, thereby removing the insulating layer. This results in multiple mesa-shaped light-emitting elements 11 on the substrate 210 ( FIG. 7A ). Next, the insulating layer 114 and the reflective layer 115 are formed along the top, side, and base of the mesa portion 12A by, for example, CVD ( FIG. 7A ).

[0052] Next, an insulating layer 12 is formed by, for example, CVD to embed the multiple light-emitting elements 11 (FIG. 7B), and then trenches H3 are formed in predetermined locations by, for example, dry etching (FIG. 7C). Next, plugs 12a are formed by, for example, CVD to fill the trenches H3 (FIG. 7D). Next, a wiring layer 15 is formed on the insulating layer 12 through various processes (FIG. 7E). The light-emitting section 200 thus formed is bonded to the drive substrate 30 with the surface S2 of the light-emitting section 200 facing the wiring layer 15 and the surface S3 of the drive substrate 30 facing each other (FIGS. 7F and 7G). The substrate 210 is then removed by, for example, CMP (FIG. 7H).

[0053] Next, an opening H1 is formed in a predetermined location of the insulating layer 12 by, for example, dry etching, exposing the wiring layer 17 at its bottom ( FIG. 7I ). Next, an insulating layer 22 is formed in contact with the side surface of the opening H1 by, for example, CVD, and an electrode layer 13 is formed in contact with the surface of each light-emitting element 11 (compound semiconductor layer 111) ( FIG. 7J ). Next, an insulating layer 14a is formed in a predetermined location by, for example, CVD ( FIG. 7K ). Subsequently, a light-shielding layer 14b is formed in a location not facing the insulating layer 14a by, for example, CVD ( FIG. 7L ). By forming the light-shielding layer 14b in the opening H1 as well, the light-shielding layer 14b contacts the wiring layer 17 exposed at the bottom of the opening H1. In this manner, the light-emitting unit 10 is formed on the drive substrate 30. The surface S4 of the light-emitting unit 10 includes the surfaces of the insulating layer 14a and the light-shielding layer 14b. Surface S4 is generally flat.

[0054] Next, multiple recesses are formed on the surface of the substrate 110 by, for example, dry etching, and then filled with a light-transmitting material by, for example, CVD. This results in the on-chip lens layer 26 (FIG. 7M). Next, the entire surface including the on-chip lens layer 26 is planarized by, for example, CMP, and then the protective layer 25 and the insulating layer 22 are stacked in this order by, for example, CVD (FIG. 7N). Next, multiple openings H4 are formed in the insulating layer 22 by, for example, dry etching, exposing the protective layer 25 at the bottom (FIG. 7O). Next, wavelength conversion layers 21 (21R, 21G, 21G) are formed by, for example, CVD, so as to fill the multiple openings H4 (FIG. 7P). Next, insulating layers 24a are formed in predetermined locations on the surface including the wavelength conversion layers 21 (21R, 21G, 21G) (FIG. 7Q). Next, light-shielding layers 24b are formed in locations not facing the insulating layers 24a (FIG. 7R). In this manner, the wavelength conversion unit 100 is formed. In this case, a surface including the surfaces of the insulating layer 24a and the light-shielding layer 24b constitutes a surface S5 of the wavelength converting portion 100. The surface S5 is a generally flat surface.

[0055] The wavelength conversion unit 100 thus formed is bonded to the light-emitting unit 10 with the surface S4 of the light-emitting unit 10 and the surface S5 of the wavelength conversion unit 100 facing each other (FIGS. 7S and 7T). The wavelength conversion unit 100 and the light-emitting unit 10 are bonded together with the surface S4 of the light-emitting unit 10 and the surface S5 of the wavelength conversion unit 100 facing each other so that the light-shielding layer 14b and the light-shielding layer 24b face each other. The wavelength conversion unit 100 and the light-emitting unit 10 are bonded together by bonding the light-shielding layer 14b and the light-shielding layer 24b together and also bonding the insulating layer 24a and the light-shielding layer 24b together. The substrate 110 is then removed, for example, by wet etching (FIG. 7U).

[0056] Next, an opening H2, the bottom surface of which exposes the wiring layer 17, is formed at a predetermined location in the insulating layer 22. Next, an insulating film 19 is formed by, for example, CVD so as to contact the side surface of the opening H2, and a wiring layer 27 is formed in the opening H1, so that the wiring layer 27 comes into contact with the wiring layer 17 exposed at the bottom surface of the opening H1. In this manner, the light-emitting device 1 is manufactured.

[0057] (1-3. Actions and Effects) Next, the effects of the light emitting device 1 will be described.

[0058] In the present embodiment, light-shielding layers 14b, 24b are provided in a layer between the light-emitting element 11 and the wavelength conversion layer 21, which is a boundary between two adjacent pixels and includes the bonding surface BI1 of the light-emitting unit 10 and the wavelength conversion unit 20. As a result, for example, part of the light emitted from the light-emitting element 11 is reflected by the light-shielding layers 14b, 24b, and therefore, leakage of the light emitted from the light-emitting element 11 to an adjacent pixel can be suppressed by the light-shielding layers 14b, 24b.

[0059] In the present embodiment, the light-shielding layers 14b and 24b are bonded to each other at the bonding surface BI1, which allows the light-shielding layers 14b and 24b to not only suppress leakage of light emitted from the light-emitting element 11 into adjacent pixels, but also bond the light-emitting unit 10 and the wavelength conversion unit 20 together.

[0060] In this embodiment, the insulating layer 24 a and the light-shielding layer 24 b are bonded to each other at the bonding surface BI1, which allows the insulating layer 24 a and the light-shielding layer 24 b to serve as bonding the light-emitting unit 10 and the wavelength conversion unit 20 to each other.

[0061] In this embodiment, the surfaces of the light-shielding layer 14b and the insulating layer 14a are arranged in the same plane in the light-emitting unit 10, and the surfaces of the light-shielding layer 24b and the insulating layer 24a are arranged in the same plane in the wavelength conversion unit 20. This makes it possible to improve the adhesion between the light-shielding layer 14b and the light-shielding layer 24b at the bonding surface BI1, and to improve the adhesion between the insulating layer 14a and the insulating layer 24a.

[0062] In the present embodiment, the light-shielding layers 14b and 24b are provided so as to completely (i.e., continuously and seamlessly) surround the pixel in plan view, so that, for example, part of the light emitted from the light-emitting element 11 is reflected by the light-shielding layers 14b and 24b, and therefore, the light-shielding layers 14b and 24b can suppress leakage of the light emitted from the light-emitting element 11 to adjacent pixels.

[0063] In the present embodiment, when the light-shielding layers 14b, 24b are made of a metal or an alloy containing Cu, Au, Al, or In, the light-shielding layers 14b, 24b can efficiently reflect the light emitted from the light-emitting element 11. Therefore, the light-shielding layers 14b, 24b can suppress leakage of the light emitted from the light-emitting element 11 to adjacent pixels.

[0064] In this embodiment, when the insulating layer 24a and the light-shielding layer 24b are composed of an oxide layer, a nitride layer, or a laminate of an oxide layer and a nitride layer, the adhesion between the insulating layer 14a and the insulating layer 24a can be improved at the bonding surface BI1.

[0065] In the present embodiment, the light-shielding layer 14b is electrically connected to each light-emitting element 11 (compound semiconductor layer 111) via the electrode layer 13 provided in the light-emitting section 10. The light-shielding layer 14b is further electrically connected to the drive circuit 32 via a through via (a through via formed by the opening H1 and a part of the light-shielding layer 14b) provided in the light-emitting section 10. This allows the resistance of the wiring extending from each light-emitting element 11 (compound semiconductor layer 111) to the drive circuit 32 to be reduced by the light-shielding layer 14b.

[0066] In this embodiment, each pixel is provided with a wavelength conversion layer 21R, a wavelength conversion layer 21G, or a wavelength conversion layer 21B. As a result, light emitted from the light emitting element 11 is converted into red light by the wavelength conversion layer 21R, light emitted from the light emitting element 11 is converted into green light by the wavelength conversion layer 21G, and light emitted from the light emitting element 11 is converted into blue light by the wavelength conversion layer 21B. As a result, a full-color image can be displayed.

[0067] In this embodiment, a reflective layer 23 is provided that can reflect the light emitted from the light-emitting element 11 and the light generated by wavelength conversion in each of the wavelength conversion layers 21R, 21G, and 21B. This allows the color light emitted from the light-emitting element 11 and converted in each of the wavelength conversion layers 21R, 21G, and 21B to be efficiently extracted from the light exit surface S1.

[0068] In this embodiment, an on-chip lens layer 26 is provided, which allows image light to be formed by the light of each color emitted from the light emission surface S1.

[0069] 2. Modifications of the First Embodiment Modifications of the light emitting device 1 according to the first embodiment will be described below.

[0070] <2-1. Modification A> Fig. 8 shows an example of a planar layout of a plurality of pixels in the light emitting device 1 of Fig. 1. In the above embodiment, a plurality of pixels (e.g., red pixel Pr, green pixel Pg, and blue pixel Pb) may be arranged two-dimensionally in a honeycomb shape in plan view, for example, as shown in Fig. 8.

[0071] <2-2. Modification B> Fig. 9 shows a modification of the cross-sectional configuration of the light emitting device 1 of Fig. 1. In the above embodiment and its modifications, each pixel may be configured to emit light of a common color. In the above embodiment and its modifications, each pixel may be configured as a red pixel Pr, for example, as shown in Fig. 9.

[0072] <2-3. Variation C> FIG. 10 illustrates a variation of the cross-sectional configuration of the light-emitting device 1 of FIG. 1 . In the above embodiment and its variations, the wavelength conversion unit 20 may have a wavelength conversion layer 21Bx instead of the wavelength conversion layer 21B in some pixels (blue pixels Pb) among the plurality of pixels, as shown in FIG. 10 . The wavelength conversion layer 21Bx is formed of a resin portion capable of transmitting light emitted from the light-emitting element 11. In this case, the wavelength conversion unit 20 may have a dielectric multilayer film (DBR layer 28) capable of reflecting light (e.g., blue light or ultraviolet light) emitted from the light-emitting element 11 in the plurality of pixels (red pixels Pr and green pixels Pg) having wavelength conversion layers 21R and 21G, as shown in FIG. 10 . In this case, the color purity of the light emitted from each pixel can be improved.

[0073] <2-4. Modification D> Fig. 11 shows a modification of the cross-sectional configuration of the light-emitting element 11 and its vicinity. In the above embodiment and its modifications, the light-emitting unit 10 may have a reflective film 14c covering the surfaces (side and bottom surfaces) of the light-shielding layer 14b, for example, as shown in Fig. 11. In the above embodiment and its modifications, the wavelength conversion unit 20 may have a reflective film 24c covering the surfaces (side and top surfaces) of the light-shielding layer 24b, for example, as shown in Fig. 11.

[0074] The reflective films 14c, 24c are configured to be able to reflect light emitted from the light-emitting element 11 and light generated by wavelength conversion in the wavelength conversion unit 20. The reflective films 14c, 24c are made of a material having a reflectance higher than the reflectance of the light-shielding layers 14b, 24b (reflectance for the wavelength region (visible region) of light emitted from the light-emitting element 11 and light generated by wavelength conversion in the wavelength conversion unit 20). The reflective films 14c, 24c are made of, for example, a metal or alloy containing Al, Ag, or Rh. As a result, for example, the light emitted from the light-emitting element 11 and the light generated by wavelength conversion in the wavelength conversion unit 20 are reflected by the reflective films 14c, 24c, and therefore, leakage of light emitted from the light-emitting element 11 to adjacent pixels can be suppressed by the reflective films 14c, 24c.

[0075] In this modification, the reflective films 14c and 24c may be made of a dielectric multilayer film. Even in this case, for example, light emitted from the light emitting element 11 and light generated by wavelength conversion in the wavelength conversion unit 20 are reflected by the reflective films 14c and 24c, so that leakage of light emitted from the light emitting element 11 to adjacent pixels can be suppressed by the reflective films 14c and 24c.

[0076] <2-5. Modification E> Fig. 12 shows a modification of the cross-sectional configuration of the light-emitting element 11 and its vicinity. Fig. 13 shows a modification of the cross-sectional configuration of the light-emitting device 1 of Fig. 1. In the above-described embodiment and its modifications, for example, as shown in Figs. 12 and 13, the light-shielding layers 14b, 24b may not be in contact with the electrode layer 13 and may be electrically isolated from the electrode layer 13. Even in this case, the resistance of the wiring extending from each light-emitting element 11 (compound semiconductor layer 111) to the drive circuit 32 can be constituted by the electrode layer 13.

[0077] <2-6. Modification F> Fig. 14 shows a modification of the cross-sectional configuration as viewed in the direction of the arrows A-A in Fig. 2. Fig. 15 shows an example of the cross-sectional configuration when the electrode layer 13 and the insulating layer 14a are omitted from Fig. 14. Fig. 16 shows a modification of the cross-sectional configuration as viewed in the direction of the arrows B-B in Fig. 2. Fig. 17 shows an example of the cross-sectional configuration when the insulating layer 24a is omitted from Fig. 16.

[0078] In the above-described embodiment and its modified examples, the light-shielding layer 14b may be provided so as to partially surround one pixel in plan view (i.e., so as to have a gap in one portion), as shown in Figures 14 and 15, for example. Furthermore, in the above-described embodiment and its modified examples, the light-shielding layer 24b may be provided so as to partially surround one pixel in plan view (i.e., so as to have a gap in one portion), as shown in Figures 16 and 17, for example. Even in this case, for example, a portion of the light emitted from the light-emitting element 11 is reflected by the light-shielding layers 14b and 24b, and therefore, leakage of light emitted from the light-emitting element 11 to adjacent pixels can be suppressed by the light-shielding layers 14b and 24b.

[0079] <2-7. Modification G> Figure 18 shows a modification of the cross-sectional configuration as viewed in the direction of the arrows A-A in Figure 2. In the above embodiment and its modifications, the wavelength conversion unit 20 may have, for example, a pinhole layer 29 (light-shielding layer) with a through-hole H6 formed on the light exit surface S1 side, as shown in Figure 18. In this case, image light can be formed by the light of each color emitted from the pinhole layer 29.

[0080] <2-8. Modification H> Fig. 19 shows a modification of the planar layout of a plurality of pixels in the light-emitting device 1 of Fig. 1. In the above-described embodiment and its modifications, when it is not necessary to provide light-shielding layers 14b, 24b between pixels of the same color, the light-shielding layers 14b, 24b may be provided so as to completely surround a group of pixels emitting light of the same color (e.g., red pixels Pr) in a planar view, as shown in Fig. 19, for example.

[0081] <2-9. Modification I> In the above embodiment and its modifications, either the light-shielding layer 14b or the light-shielding layer 24b may be omitted. In this case, if the light-shielding layer 14b is omitted, an insulating layer 14a may be provided in place of the light-shielding layer 14b, and the insulating layer 14a provided in place of the light-shielding layer 14b may be bonded to the light-shielding layer 24b. Furthermore, if the light-shielding layer 24b is omitted, an insulating layer 24a may be provided in place of the light-shielding layer 24b, and the insulating layer 24a provided in place of the light-shielding layer 24b may be bonded to the light-shielding layer 14b.

[0082] Furthermore, in the above-described embodiment and its modified examples, natural oxide films may be present on the surfaces of the light-shielding layers 14b and 24b prior to the manufacturing process in which the light-shielding layers 14b and 24b are bonded to each other. Even in such cases, the natural oxide films themselves are very thin, so it is possible to bond the light-shielding layers 14b and 24b to each other even if natural oxide films are present on the surfaces of the light-shielding layers 14b and 24b. However, in this case, although the natural oxide films may remain on the bonding surfaces of the light-shielding layers 14b and 24b, it is possible to electrically connect the light-shielding layers 14b and 24b to each other.

[0083] 3. Second Embodiment (3-1. Configuration of Light-Receiving Device) A light-receiving device 2 according to a second embodiment of the present disclosure will be described. Fig. 20 illustrates an example cross-sectional configuration of the light-receiving device 2 according to the second embodiment of the present disclosure.

[0084] The light-receiving device 2 includes a light-receiving unit 200A in which a plurality of pixels (e.g., red pixels Pr, green pixels Pg, and blue pixels Pb) are arranged in a two-dimensional array, and a frame unit 200B provided around the light-receiving unit 200A. The light-receiving unit 200A is formed by stacking a light-receiving unit 50 and a color filter unit 60 in this order on a drive substrate 70, for example. The area where the light-receiving unit 50 and the color filter unit 60 are bonded to each other is a bonding surface BI1, and the area where the light-receiving unit 50 and the drive substrate 70 are bonded to each other is a bonding surface BI2. The outermost surface of the color filter unit 60 is a light-emitting surface S1. The plurality of pixels are arranged in a two-dimensional array in a planar view, for example, in a matrix or honeycomb pattern.

[0085] In this specification, "planar view" refers to viewing a plane having a normal to the stacking direction of the light receiving device 2 from the stacking direction of the light receiving device 2. The light receiving section 50 corresponds to a specific example of an "optical element array layer" according to an embodiment of the present disclosure. The color filter section 60 corresponds to a specific example of a "light control array layer" according to an embodiment of the present disclosure. The drive substrate 70 corresponds to a specific example of a "drive substrate" according to an embodiment of the present disclosure. The bonding surface BI2 corresponds to a specific example of a "bonding surface" according to an embodiment of the present disclosure. The laminate formed by the light receiving section 50 and the color filter section 60 corresponds to a specific example of a "laminate" according to an embodiment of the present disclosure.

[0086] The light receiving unit 50 corresponds to the light emitting unit 10 according to the above embodiment and its modified examples, in which a light receiving element 51 is provided instead of the light emitting element 11. The multiple light receiving elements 51 are arranged two-dimensionally in the light receiving unit 200A. The light receiving element 51 corresponds to a specific example of an "optical element" or "light receiving element" according to an embodiment of the present disclosure. The multiple light receiving elements 51 are provided one for each pixel. The light receiving element 51 is a solid-state light receiving element, such as a photodiode, that receives light incident from the outside through the light emitting surface S1. The light receiving element 51 refers to a state cut from a wafer used for crystal growth, and is not a packaged type covered with molded resin or the like. The light receiving element 51 has a size of, for example, 5 μm to 100 μm.

[0087] The color filter section 60 corresponds to the wavelength conversion section 20 according to the above embodiment and its modified examples, in which a color filter layer 61 is provided instead of the wavelength conversion layer 21. The color filter layer 61 is composed of a plurality of color filter layers 61R, 61G, and 61B arranged two-dimensionally, as shown in, for example, FIG. 20 . The color filter layer 61R is provided instead of the wavelength conversion layer 21R according to the above embodiment and its modified examples. The color filter layer 61G is provided instead of the wavelength conversion layer 21G according to the above embodiment and its modified examples. The color filter layer 61B is provided instead of the wavelength conversion layer 21B according to the above embodiment and its modified examples.

[0088] The color filter layer 61R is made of a material that can selectively transmit light in the red wavelength range (red light) of light that is incident from the outside through the light exit surface S1. The color filter layer 61G is made of a material that can selectively transmit light in the green wavelength range (green light) of light that is incident from the outside through the light exit surface S1. The color filter layer 61B is made of a material that can selectively transmit light in the blue wavelength range (blue light) of light that is incident from the outside through the light exit surface S1.

[0089] The drive board 70 corresponds to the drive board 30 according to the above embodiment and its modified example, except that a drive circuit 72 is provided instead of the drive circuit 32. The drive circuit 72 is a circuit capable of driving the plurality of light-receiving elements 51 arranged in the light-receiving section 200A.

[0090] (3-2. Actions and Effects) Next, the effects of the light receiving device 2 will be described.

[0091] In this embodiment, light-shielding layers 14b, 24b are provided in the layer between the light-receiving element 51 and the color filter section 60, which is the boundary between two adjacent pixels and includes the bonding surface BI1 of the light-receiving section 50 and the color filter section 60. As a result, for example, part of the light incident from the outside is reflected by the light-shielding layers 14b, 24b, and therefore, leakage of the light incident from the outside to adjacent pixels can be suppressed by the light-shielding layers 14b, 24b.

[0092] In this embodiment, the light-shielding layers 14b and 24b are bonded to each other at the bonding surface BI1, which allows the light-shielding layers 14b and 24b to not only suppress leakage of externally incident light into adjacent pixels but also bond the light-receiving section 50 and the color filter section 60 to each other.

[0093] In this embodiment, the insulating layer 24 a and the light-shielding layer 24 b are bonded to each other at the bonding surface BI1, which allows the insulating layer 24 a and the light-shielding layer 24 b to serve as bonding the light-receiving section 50 and the color filter section 60 to each other.

[0094] In this embodiment, the surfaces of the light-shielding layer 14b and the insulating layer 14a are arranged in the same plane in the light-receiving section 50, and the surfaces of the light-shielding layer 24b and the insulating layer 24a are arranged in the same plane in the color filter section 60. This makes it possible to improve the adhesion between the light-shielding layer 14b and the light-shielding layer 24b at the bonding surface BI1, and to improve the adhesion between the insulating layer 14a and the insulating layer 24a.

[0095] In the present embodiment, the light-shielding layers 14b and 24b are provided so as to completely (i.e., continuously and seamlessly) surround the pixel in plan view, whereby, for example, a portion of light incident from the outside is reflected by the light-shielding layers 14b and 24b, and thus the light-shielding layers 14b and 24b can suppress leakage of the light incident from the outside to adjacent pixels.

[0096] In the present embodiment, when the light-shielding layers 14b and 24b are made of a metal or alloy containing Cu, Au, Al, or In, the light-shielding layers 14b and 24b can efficiently reflect externally incident light, thereby preventing externally incident light from leaking into adjacent pixels.

[0097] In this embodiment, when the insulating layer 24a and the light-shielding layer 24b are composed of an oxide layer, a nitride layer, or a laminate of an oxide layer and a nitride layer, the adhesion between the insulating layer 14a and the insulating layer 24a can be improved at the bonding surface BI1.

[0098] In this embodiment, the light-shielding layer 14b is electrically connected to each light-receiving element 51 via the electrode layer 13 provided in the light-receiving unit 50. The light-shielding layer 14b is further electrically connected to the drive circuit 72 via a through via (a through via formed by the opening H1 and a part of the light-shielding layer 14b) provided in the light-receiving unit 50. This allows the resistance of the wiring extending from each light-receiving element 51 to the drive circuit 72 to be reduced by the light-shielding layer 14b.

[0099] In this embodiment, each pixel is provided with a color filter layer 61R, a color filter layer 61G, or a color filter layer 61B. As a result, red light contained in light incident from the outside is selectively transmitted by the color filter layer 61R, green light contained in light incident from the outside is selectively transmitted by the color filter layer 61G, and blue light contained in light incident from the outside is selectively transmitted by the color filter layer 61B. As a result, a full-color image can be obtained.

[0100] In this embodiment, a reflective layer 23 is provided that can reflect light incident from the outside and light obtained by wavelength selective transmission through each of the color filter layers 61R, 61G, and 61B, thereby allowing each light receiving element 51 to efficiently detect the light incident from the outside and the light obtained by wavelength selective transmission through each of the color filter layers 61R, 61G, and 61B.

[0101] In this embodiment, an on-chip lens layer 26 is provided, which allows light incident from the outside to be efficiently incident on each of the color filter layers 61R, 61G, and 61B, thereby making it possible to acquire a clear image.

[0102] 4. Modifications of the Second Embodiment Various modifications of the light emitting device 1 according to the first embodiment can be applied to the light receiving device 2.

[0103] In the light-receiving device 2, the light-receiving section 50 may have, for example, a reflective film 14c covering the surfaces (side and bottom surfaces) of the light-shielding layer 14b. In the light-receiving device 2, the color filter section 60 may have, for example, a reflective film 24c covering the surfaces (side and top surfaces) of the light-shielding layer 24b. This allows the reflective films 14c, 24c to suppress leakage of externally incident light into adjacent pixels.

[0104] Furthermore, in the light-receiving device 2, the light-shielding layers 14b and 24b may not be in contact with the electrode layer 13 and may be electrically isolated from the electrode layer 13. Even in this case, the resistance of the wiring extending from each light-receiving element 51 to the drive circuit 72 can be reduced by the light-shielding layer 14b.

[0105] Furthermore, in the light-receiving device 2, the light-shielding layer 14b may be provided, for example, so as to partially surround one pixel in a planar view (i.e., so as to have a partial gap). Furthermore, in the light-receiving device 2, the light-shielding layer 24b may be provided, for example, so as to partially surround one pixel in a planar view (i.e., so as to have a partial gap). Even in this case, for example, a portion of light incident from outside is reflected by the light-shielding layers 14b, 24b, and therefore leakage of light incident from outside to adjacent pixels can be suppressed by the light-shielding layers 14b, 24b.

[0106] The present disclosure has been described above by way of embodiments, their modifications, application examples, and applied examples. However, the present disclosure is not limited to the above-described embodiments, etc., and various modifications are possible. Note that the effects described in this specification are merely examples. The effects of the present disclosure are not limited to the effects described in this specification. The present disclosure may have effects other than those described in this specification.

[0107] The present disclosure may also be configured as follows: (1) An optical device comprising: an optical element array layer in which a plurality of light-emitting elements or light-receiving elements are arranged as optical elements; a drive substrate including a drive circuit for driving the optical elements; and a light control array layer in which a plurality of light control units are arranged, the light elements and the light control units being capable of controlling light emitted from the light-emitting elements and outputting it to the outside or controlling light incident from the outside and outputting it to the light-receiving elements, wherein the optical elements and the light control units are arranged in positions facing each other, the optical element array layer and the light control array layer are bonded to each other, and a laminate formed by the optical element array layer and the light control array layer has a metal layer in a layer between the optical elements and the light control units, which is a boundary between two adjacent pixels when the opposing optical elements and the light control units are pixels and includes a bonding surface between the optical element array layer and the light control array layer. (2) The optical device according to (1), wherein the optical element array layer has a first metal layer as the metal layer, the light control array layer has a second metal layer as the metal layer, and the first metal layer and the second metal layer are bonded to each other at the bonding surface. (3) The optical device according to (2), wherein the optical element array layer has a first insulating layer at a position not facing the first metal layer at the bonding surface, the light control array layer has a second insulating layer at a position not facing the second metal layer at the bonding surface, and the first insulating layer and the second insulating layer are bonded to each other at the bonding surface. (4) The optical device according to (3), wherein, in the optical element array layer, the respective surfaces of the first metal layer and the first insulating layer are arranged in the same plane, and, in the light control array layer, the respective surfaces of the second metal layer and the second insulating layer are arranged in the same plane. (5) The optical device according to any one of (2) to (4), wherein the first metal layer and the second metal layer are provided so as to completely or at least partially surround the pixel in a plan view. (6) The optical device according to any one of (1) to (4), wherein the metal layer is made of a metal or an alloy containing Cu, Au, Al, or In.(7) The optical device according to (3) or (4), wherein the first insulating layer and the second insulating layer are each composed of an oxide layer, a nitride layer, or a stack of an oxide layer and a nitride layer. (8) The optical device according to any one of (1) to (7), wherein the metal layer has a reflective film on a surface of the metal layer composed of a material having a higher reflectance in the visible region than a material inside the metal layer. (9) The optical device according to (8), wherein the reflective film is composed of a metal or an alloy containing, for example, Al, Ag, or Rh. (10) The optical device according to (8), wherein the reflective film is composed of a dielectric multilayer film. (11) The optical device according to any one of (1) to (10), wherein the metal layer is electrically connected to each of the optical elements via wiring provided in the optical element array layer and is electrically connected to the drive circuit via a through via provided in the optical element array layer. (12) The optical device according to any one of (1) to (11), wherein the light control unit has a wavelength conversion layer capable of converting the wavelength of light emitted from the light-emitting element in at least one of the plurality of pixels. (13) The optical device according to (12), wherein the optical element array layer has a reflective layer in contact with a side surface of the wavelength conversion layer, the reflective layer being capable of reflecting light emitted from the light-emitting element and light generated by wavelength conversion in the wavelength conversion layer. (14) The optical device according to (13), wherein the light control unit has a dielectric multilayer film capable of reflecting light emitted from the light-emitting element in the plurality of pixels having the wavelength conversion layer. (15) The optical device according to any one of (12) to (14), wherein the light control unit has a light emission surface from which light generated by wavelength conversion in the wavelength conversion layer is emitted, and a light-shielding layer having through holes formed on the light emission surface side. (16) The optical device according to any one of (12) to (15), wherein the light control unit has a lens on the light exit surface side.(17) A method for manufacturing an optical device, comprising: preparing an optical element array layer in which a plurality of light-emitting elements or light-receiving elements are arranged as optical elements, and a first metal layer is provided at a boundary between two adjacent optical elements; preparing a light-controlling array layer in which a plurality of light control units are arranged that can control light emitted from the light-emitting elements and output it to the outside or control light incident from the outside and output it to the light-receiving elements, and a second metal layer is provided at the boundary between two adjacent optical elements; and bonding the optical element array layer and the light-controlling array layer to each other in a state in which the optical element array layer and the light-controlling array layer face each other so that the optical elements and the light control units face each other and the first metal layer and the second metal layer face each other. (18) The method for manufacturing an optical device according to (17), which includes bonding the optical element array layer and the light-controlling array layer to each other by joining the first metal layer and the second metal layer to each other. (19) The method for manufacturing an optical device according to (18), wherein the optical element array layer has a first insulating layer in the same plane as the first metal layer, and the light control array layer has a second insulating layer in the same plane as the second metal layer, and the first insulating layer and the second insulating layer are joined together to bond the optical element array layer and the light control array layer to each other.

[0108] This application claims priority based on Japanese Patent Application No. 2023-115478, filed on July 13, 2023, in the Japan Patent Office, the entire contents of which are incorporated herein by reference.

[0109] Those skilled in the art will recognize that various modifications, combinations, subcombinations, and variations may occur depending on design requirements and other factors, and are intended to be within the scope of the appended claims and their equivalents.

Claims

1. An optical device comprising: an optical element array layer in which a plurality of light-emitting elements or light-receiving elements are arranged as optical elements; a drive substrate including a drive circuit for driving the optical elements; and a light control array layer in which a plurality of light control units are arranged that can control light emitted from the light-emitting elements and output it to the outside, or control light incident from the outside and output it to the light-receiving elements, wherein the optical elements and the light control units are arranged in positions facing each other, the optical element array layer and the light control array layer are bonded to each other, and a laminate formed by the optical element array layer and the light control array layer has a metal layer in a layer between the optical elements and the light control units, which is the boundary portion between two adjacent pixels when the opposing optical elements and the light control units are pixels, and which includes the bonding surface of the optical element array layer and the light control array layer.

2. The optical device according to claim 1, wherein the optical element array layer has a first metal layer as the metal layer, the optical control array layer has a second metal layer as the metal layer, and the first metal layer and the second metal layer are bonded to each other at the bonding surface.

3. The optical device described in claim 2, wherein the optical element array layer has a first insulating layer at a position not facing the first metal layer on the bonding surface, the optical control array layer has a second insulating layer at a position not facing the second metal layer on the bonding surface, and the first insulating layer and the second insulating layer are bonded to each other at the bonding surface.

4. The optical device according to claim 3, wherein in the optical element array layer, the respective surfaces of the first metal layer and the first insulating layer are arranged in the same plane, and in the light control array layer, the respective surfaces of the second metal layer and the second insulating layer are arranged in the same plane.

5. The optical device according to claim 2, wherein the first metal layer and the second metal layer are provided so as to completely or at least partially surround the pixel in a plan view.

6. The optical device according to claim 1, wherein the metal layer is made of a metal or an alloy containing Cu, Au, Al or In.

7. The optical device according to claim 3, wherein the first insulating layer and the second insulating layer are each composed of an oxide layer, a nitride layer, or a laminate of an oxide layer and a nitride layer.

8. The optical device according to claim 1, wherein the metal layer has a reflective film on the surface of the metal layer, the reflective film being made of a material having a higher reflectance in the visible region than the material inside the metal layer.

9. The optical device according to claim 8, wherein the reflective film is made of a metal or an alloy containing, for example, Al, Ag or Rh.

10. The optical device according to claim 8, wherein the reflective film is made of a dielectric multilayer film.

11. The optical device according to claim 1, wherein the metal layer is electrically connected to each of the optical elements via wiring provided in the optical element array layer, and is electrically connected to the driving circuit via a through via provided in the optical element array layer.

12. The optical device according to claim 1, wherein the optical control unit has a wavelength conversion layer capable of converting the wavelength of light emitted from the light-emitting element in at least one of the plurality of pixels.

13. The optical device according to claim 12, wherein the optical element array layer has a reflective layer in a position adjacent to a side surface of the wavelength conversion layer, the reflective layer being capable of reflecting light emitted from the light emitting element and light generated by wavelength conversion in the wavelength conversion layer.

14. The optical device according to claim 13, wherein the optical control section has a dielectric multilayer film capable of reflecting light emitted from the light-emitting element in a plurality of the pixels having the wavelength conversion layer.

15. The optical device according to claim 12, wherein the light control unit has a light exit surface from which light generated by wavelength conversion in the wavelength conversion layer is emitted, and has a light-shielding layer having a through hole formed on the light exit surface side.

16. The optical device according to claim 12, wherein the light control unit has a lens on the light exit surface side.

17. A method for manufacturing an optical device, comprising: preparing an optical element array layer in which a plurality of light-emitting elements or light-receiving elements are arranged as optical elements, and a first metal layer is provided at the boundary between two adjacent optical elements; preparing a light control array layer in which a plurality of light control units capable of controlling light emitted from the light-emitting elements and outputting it to the outside, or controlling light incident from the outside and outputting it to the light-receiving elements, are arranged, and a second metal layer is provided at the boundary between two adjacent optical elements; and bonding the optical element array layer and the light control array layer to each other in a state in which the optical element array layer and the light control array layer are opposed to each other so that the optical elements and the light control units are opposed to each other and the first metal layer and the second metal layer are opposed to each other.

18. The method for manufacturing an optical device according to claim 17, further comprising bonding the first metal layer and the second metal layer together, thereby bonding the optical element array layer and the light control array layer together.

19. A method for manufacturing an optical device as described in claim 18, comprising: the optical element array layer having a first insulating layer in the same plane as the first metal layer; the optical control array layer having a second insulating layer in the same plane as the second metal layer; and bonding the first insulating layer and the second insulating layer to each other, thereby bonding the optical element array layer and the optical control array layer to each other.

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