TSV interposer and manufacturing method therefor, and three-dimensional chip

Abstract

The present disclosure provides a TSV interposer and a manufacturing method therefor, and a three-dimensional chip. The TSV interposer comprises: a substrate provided therein with a cavity and a first structure layer covering part of the inner wall of the cavity, wherein the material type of the first structure layer is different from that of the substrate; a through via structure running through the substrate and located on one side of the cavity; and liquid metal located in the cavity, wherein the liquid metal and the first structure layer comprise the same material element. According to the present disclosure, the problem in the prior art of poor heat dissipation capability of TSV interposers is solved.

Description

TSV adapter plate, manufacturing method thereof and three-dimensional chip

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This disclosure claims priority to a Chinese patent application filed with the Patent Office of China on July 20, 2023, with application number 2023109002247 and entitled “TSV adapter board, its manufacturing method and three-dimensional chip,” the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present disclosure relates to the field of semiconductor technology, and in particular to a TSV adapter board, a manufacturing method thereof, and a three-dimensional chip. Background Art

[0004] In recent years, with the in-depth research and rapid advancements in integrated circuit packaging design, chip integration has significantly increased. Three-dimensional chip integration technology based on TSV (Through-Silicon Via) has also been widely explored and researched, placing higher technical standards and requirements on chip packaging technology. Currently, some existing packaging technologies suffer from significant signal loss during chip stacking. Chip stacking increases heat generation without a corresponding increase in heat dissipation area, leading to a sharp increase in heat density. Furthermore, while multi-chip packaging can maintain the original heat dissipation area, the interconnected heat sources between different chips lead to increased thermal coupling, further exacerbating thermal issues. For RF chips, the most commonly used frequency bands for satellite services are the C (4-8 GHz) and Ku (12-18 GHz) bands. While the Ka band offers greater available bandwidth, it suffers from more severe rain attenuation, places higher demands on components and processes, and has been slow to develop. Furthermore, with the continuous increase in computing power and power consumption of central processing units (CPUs), efficient heat dissipation has become a pressing issue. In actual application scenarios, there are higher requirements for the stress and strain conditions, signal stability and radiation resistance of chips under extreme working conditions, and related low-loss and heat dissipation technologies urgently need to be improved.

[0005] Summary of the Invention

[0006] The main purpose of the present disclosure is to provide a TSV adapter board, a manufacturing method thereof, and a three-dimensional chip, so as to at least solve the problem of poor heat dissipation capability of the TSV adapter board in the prior art.

[0007] To achieve the objective, according to one aspect of the present disclosure, a TSV adapter board is provided, comprising: a substrate having a chamber therein and a first structural layer covering a portion of the inner wall of the chamber, wherein the material type of the first structural layer is different from the material type of the substrate; a through-hole structure passing through the substrate and located on one side of the chamber; and liquid metal located in the chamber, wherein the liquid metal and the first structural layer include the same material elements.

[0008] Optionally, the TSV adapter plate further includes: a first groove penetrating a portion of the surface of the substrate and a portion of the surface of the first structural layer and communicating with the chamber; and a second structural layer located in the first groove.

[0009] Optionally, the substrate includes: a first sub-substrate; a second groove extending from the surface of the first sub-substrate into the first sub-substrate; a first sub-structure layer located at the bottom of the second groove; a second sub-substrate, the surface of the second sub-substrate being bonded to the surface of the first sub-substrate; a third groove extending from the surface of the second sub-substrate into the second sub-substrate, the second groove corresponding to the third groove constituting the chamber; a second sub-structure layer located at the bottom of the third groove, the first sub-structure layer and the second sub-structure layer constituting the first structure layer.

[0010] Optionally, the through-hole structure includes: a through-hole, which passes through the substrate and is located on one side of the chamber; an insulating layer, which covers the hole wall of the through-hole; a barrier layer, which is located on the surface of the insulating layer away from the hole wall of the through-hole; and a conductive layer, which is located on the surface of the barrier layer away from the insulating layer.

[0011] Optionally, the TSV adapter plate further includes: a first metal connection structure located on the surface of the substrate, the first metal connection structure being in contact with the through-hole structure; and a second metal connection structure located on a surface of the first metal connection structure away from the substrate.

[0012] Optionally, the material of the first structural layer includes a gallium-containing compound, and the liquid metal includes gallium.

[0013] Optionally, the liquid metal further includes at least one of the following: silver, indium, tin, graphene, diamond nanoparticles, and boron nitride.

[0014] According to another aspect of the present disclosure, a method for manufacturing the TSV adapter board is provided, comprising: providing a substrate, wherein the interior of the substrate has a cavity and a first structural layer covering a portion of the inner wall of the cavity, wherein the material type of the first structural layer is different from the material type of the substrate; forming a through-hole structure penetrating the substrate on one side of the cavity; and injecting liquid metal into the cavity to obtain the TSV adapter board, wherein the liquid metal and the first structural layer include the same material elements.

[0015] Optionally, liquid metal is injected into the chamber to obtain the TSV adapter plate, including: forming a first groove that sequentially penetrates the substrate and the first structural layer to the chamber; injecting the liquid metal into the chamber through the first groove; filling the second structural layer in the first groove, and solidifying the second structural layer.

[0016] Optionally, injecting the liquid metal into the chamber through the first groove includes: placing the substrate formed with the first groove on a heating platform, the temperature of the heating platform being greater than or equal to the melting point of the liquid metal; injecting the liquid metal into the chamber through the first groove in a protective gas atmosphere; during the injection of the liquid metal, collecting image information of the chamber; and adjusting the local temperature of the heating platform during the injection process according to the image information to eliminate some bubbles in the liquid metal material.

[0017] Optionally, the heating platform is located in a perfusion chamber, the heating platform includes a plurality of heating arrays, the perfusion chamber also includes a perfusion structure filled with the liquid metal, an image acquisition device and a light source, the perfusion structure is located above the heating platform, the light source is located on the side of the heating platform, and the image acquisition device is located at least one of the following: a side of the perfusion structure away from the heating platform, a side of the heating platform away from the light source, and the liquid metal is injected into the chamber through the first groove in a protective gas atmosphere, comprising: introducing nitrogen into the perfusion chamber; opening the perfusion structure in the nitrogen atmosphere to pass the The first groove injects the liquid metal into the chamber, and during the injection process of the liquid metal, image information of the chamber is collected, including: during the injection process of the liquid metal, the light source is turned on; the image information of the chamber is collected by the image acquisition device and sent to the display so that the display displays the image information, and according to the image information, the local temperature of the heating platform during the injection process is adjusted, including: according to the image information, determining whether there are bubbles larger than a preset diameter; in the case of bubbles larger than the preset diameter, adjusting the corresponding heating temperature of the heating array according to the position of the bubbles.

[0018] Optionally, a substrate is provided, including: providing a first sub-substrate and removing a portion of the first sub-substrate to form a second groove extending from the surface of the first sub-substrate into the first sub-substrate; forming a first sub-structure layer at the bottom of the second groove; providing a second sub-substrate and removing a portion of the second sub-substrate to form a third groove extending from the surface of the second sub-substrate into the second sub-substrate; forming a second sub-structure layer at the bottom of the third groove, the first sub-structure layer and the second sub-structure layer constituting the first structure layer; using the surface of the first sub-substrate and the surface of the second sub-substrate as the bonding interface, bonding the first sub-substrate formed with the first sub-structure layer and the second sub-substrate formed with the second sub-structure layer to obtain the substrate, wherein the second groove and the third groove constitute the chamber.

[0019] Optionally, a through-hole structure penetrating the substrate is formed on one side of the chamber, including: removing a portion of the substrate to form a fourth initial trench extending from the first surface of the substrate into the substrate; sequentially forming an insulating layer, a barrier layer, and a conductive layer on the sidewalls of the fourth initial trench to obtain a fourth trench; and grinding the substrate along the second surface of the substrate until the fourth trench is penetrated to obtain the through-hole structure, wherein the first surface and the second surface are two opposite surfaces of the substrate.

[0020] Optionally, after obtaining the through-hole structure, the method further includes: performing rewiring on the first surface and the second surface to obtain a first metal connection structure in contact with the through-hole structure; and forming a second metal connection structure on a surface of the first metal connection structure away from the substrate.

[0021] According to another aspect of the present disclosure, a three-dimensional chip is provided, comprising: any one of the TSV adapter boards, or a TSV adapter board obtained by using any one of the methods for manufacturing the TSV adapter boards.

[0022] Applying the technical solution disclosed in the present invention, in the TSV adapter plate, the through-hole structure passes through the substrate, the chamber is located inside the substrate and on one side of the through-hole structure, the first structural layer covers part of the inner wall of the chamber, and the liquid metal is located in the chamber. The present invention forms liquid metal in the chamber inside the TSV adapter plate, and utilizes the high thermal conductivity of the liquid metal to improve the heat dissipation performance of the TSV adapter plate, thereby alleviating the problem of poor heat dissipation capacity of the TSV adapter plate in the prior art. In addition, the fully connected domain cavity of the through-hole structure located on one side of the chamber naturally forms a planar heat pipe micro-needle fin liquid absorption core structure, which provides a more favorable spatial environment for the adaptive heat reflow of the liquid metal. In addition, the material type of the first structural layer and the substrate are different, and the first structural layer and the liquid metal have the same material elements. In this way, the first structural layer plays a heterogeneous transition role between the substrate and the liquid metal, so that the liquid metal has better fluidity in the chamber, thereby further ensuring a better overall cooling effect on the TSV adapter plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The accompanying drawings, which constitute part of the present disclosure, are intended to provide a further understanding of the present disclosure. The exemplary embodiments of the present disclosure and their descriptions are intended to explain the present disclosure and do not constitute an improper limitation of the present disclosure. In the accompanying drawings:

[0024] FIG1 shows a schematic structural diagram of a TSV adapter board provided according to an embodiment of the present disclosure;

[0025] FIG2 is a schematic flow chart showing a method for manufacturing a TSV adapter board according to an embodiment of the present disclosure;

[0026] 3 to 11 are schematic structural diagrams showing the structure of the TSV adapter board after each process step according to the method for manufacturing the TSV adapter board provided by the embodiment of the present disclosure;

[0027] FIG12 shows a schematic structural diagram of a perfusion chamber provided according to an embodiment of the present disclosure;

[0028] FIG13 shows a schematic structural diagram of another TSV adapter board provided according to an embodiment of the present disclosure;

[0029] FIG14 shows an exploded view of a single-band radio frequency T / R sub-array TSV adapter board provided according to an embodiment of the present disclosure;

[0030] FIG15( a ) shows a schematic diagram of a parallel TSV array structure of a single CPU computing unit provided according to an embodiment of the present disclosure;

[0031] FIG15( b ) shows a comparison of water, silicon, and gallium signal loss between TSV pillars of a single CPU computing unit according to an embodiment of the present disclosure;

[0032] FIG15( c ) shows a schematic diagram of a quasi-coaxial TSV array structure of a single-band RF T / R sub-array according to an embodiment of the present disclosure.

[0033] FIG15( d ) shows a comparison of water, silicon, and gallium signal loss between TSV pillars of a single-band RF T / R sub-array according to an embodiment of the present disclosure;

[0034] FIG16( a ) shows a simulation diagram of cumulative stress of a TSV adapter board of a single CPU computing unit according to an embodiment of the present disclosure;

[0035] FIG16( b ) shows a simulation diagram of the cumulative stress of the TSV adapter plate of a single-band RF T / R sub-array according to an embodiment of the present disclosure;

[0036] FIG17( a ) shows a single particle simulation image of a 200 μm silicon substrate / 100 μm embedded gallium silicon substrate / 100 μm gallium-based alloy silicon substrate / 3.8 mm molybdenum-copper cover plate under 6 MeV proton irradiation according to an embodiment of the present disclosure;

[0037] FIG17( b ) shows a total dose simulation diagram of a 200 μm silicon substrate / 100 μm embedded gallium silicon substrate / 100 μm gallium-based alloy silicon substrate / 3.8 mm molybdenum-copper cover plate under irradiation with 100 6 MeV gamma particles according to an embodiment of the present disclosure;

[0038] FIG18( a ) shows a three-dimensional temperature distribution diagram of a local area of ​​a single CPU embedded liquid metal TSV adapter plate according to an embodiment of the present disclosure;

[0039] FIG18( b ) shows a three-dimensional temperature distribution diagram of a local area of ​​a single-band RF T / R sub-array TSV adapter board according to an embodiment of the present disclosure.

[0040] Among them, the drawings include the following figure marks: 10, substrate; 11, chamber; 12, first structural layer; 13, through-hole structure; 14, liquid metal; 15, first groove; 16, second structural layer; 17, first sub-substrate; 18, second groove; 19, first sub-structure layer; 20, second sub-substrate; 21, third groove; 22, second sub-structure layer; 23, through-hole; 24, insulating layer; 25, barrier layer; 26, conductive layer; 27, first metal connection structure; 28, initial substrate; 29, fourth groove; 30, heating platform; 31, perfusion chamber; 32, perfusion structure; 33, image acquisition device; 34, light source; 35, glove hole; 36, inlet and outlet balloon valve; 37, second metal connection structure. DETAILED DESCRIPTION

[0041] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments in the present disclosure can be combined with each other. The present disclosure will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0042] In order to enable those skilled in the art to better understand the solutions of the present disclosure, the technical solutions in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the embodiments described are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present disclosure.

[0043] It should be noted that the terms "first," "second," and the like in the specification and claims of the present disclosure and the accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate for the embodiments of the present disclosure described herein. In addition, the terms "including" and "having," and any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units that are not explicitly listed or inherent to these processes, methods, products, or apparatus.

[0044] As introduced in the background technology, the heat dissipation capability of the TSV adapter board in the prior art is relatively poor. To solve the above technical problems, the embodiments of the present disclosure provide a TSV adapter board, a manufacturing method thereof, and a three-dimensional chip.

[0045] The technical solutions in the embodiments of the present disclosure will be described clearly and completely below with reference to the accompanying drawings in the embodiments of the present disclosure.

[0046] According to one aspect of the present disclosure, a TSV adapter board is provided, as shown in FIG1 , and the TSV adapter board includes:

[0047] A substrate 10, wherein the substrate 10 has a cavity 11 and a first structural layer 12 covering a portion of an inner wall of the cavity 11, wherein the material type of the first structural layer 12 is different from the material type of the substrate 10;

[0048] a through-hole structure 13 penetrating the substrate 10 and located on one side of the chamber 11;

[0049] The liquid metal 14 is located in the chamber 11 , and the liquid metal and the first structural layer include the same material elements.

[0050] In the above-mentioned TSV adapter board, the above-mentioned through-hole structure passes through the substrate, the above-mentioned cavity is located inside the above-mentioned substrate and on one side of the above-mentioned through-hole structure, the first structural layer covers part of the inner wall of the cavity, and the liquid metal is located in the cavity. The present disclosure forms liquid metal in the cavity inside the TSV adapter board, and utilizes the high thermal conductivity of the liquid metal to improve the heat dissipation performance of the TSV adapter board, thereby alleviating the problem of poor heat dissipation capacity of the TSV adapter board in the prior art. Moreover, the fully connected domain cavity of the through-hole structure located on one side of the cavity naturally forms a planar heat pipe micro-needle fin liquid absorption core structure, which provides a more favorable spatial environment for the adaptive heat return of the liquid metal. In addition, the material type of the first structural layer and the substrate are different, and the first structural layer and the liquid metal have the same material elements. In this way, the first structural layer plays a heterogeneous transition role between the substrate and the liquid metal, so that the liquid metal has better fluidity in the cavity, thereby further ensuring a better overall cooling effect on the TSV adapter board.

[0051] Specifically, the above-mentioned liquid metal can be any suitable low-melting-point, amorphous metal material, such as gallium, rubidium and cesium, or an alloy including the metal material; the above-mentioned first structural layer is a metal compound including the metal material, and those skilled in the art can flexibly set the materials of the liquid metal and the first structural layer according to actual needs.

[0052] In an optional embodiment, the material of the first structural layer includes a gallium-containing compound, and the liquid metal includes gallium. Gallium-based liquid metal has excellent properties such as good fluidity, low loss, and high thermal conductivity, which can further improve the heat dissipation performance of the TSV adapter board, thereby further enhancing the overall structural strength and signal transmission stability of the TSV adapter board.

[0053] In actual application, the substrate can be selected according to the actual needs of the device, and may include a silicon substrate, a germanium substrate, a silicon-germanium substrate, an SOI (Silicon On Insulator) substrate, or a GOI (Germaniun On Insulator) substrate. In other embodiments, the substrate may also be a substrate comprising other elemental semiconductors or compound semiconductors, such as GaAs, InP, or SiC, or a stacked structure such as Si / SiGe, or other epitaxial structures such as SGOI (Silicon Germanium On Insulator). Of course, it may also be other substrates feasible in the prior art.

[0054] Furthermore, the substrate is a silicon substrate, the first structural layer is a gallium nitride layer or a gallium arsenide layer, and the liquid metal is liquid gallium. Liquid gallium has excellent temperature uniformity. The gallium nitride layer or gallium arsenide layer can enhance the metal thermal glide velocity of liquid gallium, thereby strengthening the radial passive heat dissipation capability of the TSV adapter board without affecting the relevant standard processes of the TSV adapter board.

[0055] Specifically, as shown in FIG1 , the TSV adapter plate further includes a first trench 15 that penetrates a portion of the surface of the substrate 10 and a portion of the surface of the first structural layer 12 and communicates with the cavity 11; and a second structural layer 16 located in the first trench 15. The first trench connects the cavity to the liquid metal, allowing the liquid metal to be poured into the cavity. The second structural layer seals the cavity filled with the liquid metal.

[0056] More specifically, the second structural layer may be a high-temperature ceramic adhesive, which can achieve a firm connection with the substrate, thereby further achieving a firm sealing of the liquid metal in the chamber.

[0057] In order to further solve the problem of poor heat dissipation effect of the TSV adapter board and further improve the structural strength of the TSV adapter board, according to another exemplary embodiment, the above-mentioned substrate includes: a first sub-substrate; a second groove, extending from the surface of the above-mentioned first sub-substrate into the above-mentioned first sub-substrate; a first sub-structure layer, located at the bottom of the above-mentioned second groove; a second sub-substrate, the surface of the above-mentioned second sub-substrate is bonded to the surface of the above-mentioned first sub-substrate; a third groove, extending from the surface of the above-mentioned second sub-substrate into the above-mentioned second sub-substrate, the above-mentioned second groove corresponds to the above-mentioned third groove, and constitutes the above-mentioned cavity; a second sub-structure layer, located at the bottom of the above-mentioned third groove, and the above-mentioned first sub-structure layer and the above-mentioned second sub-structure layer constitute the above-mentioned first structure layer. In this embodiment, a substrate with a cavity inside is obtained by bonding a first sub-substrate having a second groove and a second sub-substrate having a third groove, thereby ensuring that the obtained substrate has uniform thermal distribution, good shock resistance, and high connection strength, thereby further ensuring that the TSV adapter board has strong compressive stress, so that the TSV adapter board can withstand relatively harsh working environments and has high process compatibility; and, the first sub-structure layer and the second sub-structure layer respectively cover the bottom of the second groove and the third groove, further ensuring that the liquid metal has good flow properties on the first sub-structure layer and the second sub-structure layer, and a faster thermal sliding speed, so that the liquid metal has a better temperature uniformity effect, further improving the heat dissipation capacity of the entire TSV.

[0058] Optionally, as shown in FIG1 , the through-hole structure 13 includes: a through-hole 23 extending through the substrate 10 and located on one side of the chamber 11; an insulating layer 24 covering the wall of the through-hole 23; a barrier layer 25 located on a surface of the insulating layer 24 away from the wall of the through-hole 23; and a conductive layer 26 located on a surface of the barrier layer 25 away from the insulating layer 24. Due to the conductivity of the substrate, the insulating layer is required to be electrically insulated between the substrate and the conductive layer. To prevent conductive particles in the conductive layer from diffusing into the insulating layer and affecting the electrical characteristics of the insulating layer, a barrier layer is provided between the insulating layer and the conductive layer to prevent diffusion of conductive particles and improve the adhesion strength of the conductive layer.

[0059] In actual applications, the insulating layer is generally made of silicon oxide to isolate signals because it is easy to manufacture in through-silicon vias and is compatible with IC processes. The barrier layer can be made of polysilicon, and the conductive layer can be made of metal, such as copper pillars, to transmit signals. Of course, the materials of the insulating layer, barrier layer, and conductive layer are not limited to the above materials. Those skilled in the art can select any suitable material as the insulating layer, barrier layer, and conductive layer. The insulating layer, barrier layer, and conductive layer are not limited to single-layer structures and can also be a composite layer structure comprising multiple layers.

[0060] It should be noted that the through hole covering the insulating layer, the barrier layer and the conductive layer still has a through hole.

[0061] In some further exemplary embodiments, as shown in FIG1 , the TSV adapter plate further includes: a first metal connection structure 27 located on a surface of the substrate 10, the first metal connection structure 27 being in contact with the through-hole structure 13; and a second metal connection structure 37 located on a surface of the first metal connection structure 27 away from the substrate 10. The first and second metal connection structures satisfy the requirements of subsequent connection and packaging of the TSV adapter plate.

[0062] In actual applications, those skilled in the art may select any suitable metal material as the material for the first and second metal connection structures. The materials of the first and second metal connection structures may be the same or different, and this disclosure does not impose any specific limitations on this. In one alternative, the material of the first metal connection structure is copper, and the material of the second metal connection structure is gold.

[0063] According to some other embodiments, there are multiple through-hole structures, which can be evenly or unevenly spaced. They can be located on the same side of the chamber or on both sides. The multiple through-hole structures and fully interconnected cavities naturally form a planar heat pipe-like micro-pin fin array wick structure, creating a more favorable spatial environment for adaptive heat reflow of gallium-based liquid metal, further enhancing the radial passive heat dissipation capabilities of the TSV adapter board without affecting its existing functionality.

[0064] In order to further improve the heat dissipation capability of the entire TSV adapter plate, in other embodiments, there may be multiple chambers, and the multiple chambers are distributed in the substrate at intervals.

[0065] In the present disclosure, in addition to gallium, the liquid metal may also include at least one of the following: silver, indium, tin, graphene, diamond nanoparticles, and boron nitride. When the liquid metal also includes at least one of indium and silver, the at least one of the indium and silver can enhance the cooling performance and electromagnetic shielding capabilities of the TSV adapter plate. When the liquid metal also includes lead, the uniform distribution of high-mass atoms such as lead in the chamber can further enhance the radiation resistance of the entire TSV adapter plate.

[0066] Of course, the liquid metal is not limited to the above materials, and may also include other components that can enhance heat dissipation capability. In addition, when the liquid metal includes lead, the mass fraction of the lead may be 5%.

[0067] One embodiment is provided herein, and although a logical order is shown in the flowchart, in some cases the steps shown or described may be performed in an order different from that shown.

[0068] FIG2 is a flow chart of a method for manufacturing the TSV adapter plate according to an embodiment of the present disclosure. As shown in FIG2 , the method includes the following steps:

[0069] Step S201, providing a substrate 10 as shown in FIG6 , wherein the substrate 10 has a cavity 11 and a first structural layer 12 covering a portion of the inner wall of the cavity 11 , wherein the material type of the first structural layer 12 is different from the material type of the substrate 10 ;

[0070] Specifically, the substrate can be selected based on the actual needs of the device and may include a silicon substrate, a germanium substrate, a silicon-germanium substrate, an SOI substrate, or a GOI substrate. In other embodiments, the substrate may also include other elemental semiconductors or compound semiconductors, such as GaAs, InP, or SiC. It may also have a stacked structure, such as Si / SiGe, or another epitaxial structure, such as SGOI. Of course, other substrates feasible in the prior art may also be used.

[0071] Step S202: forming a through-hole structure 13 penetrating the substrate on one side of the chamber 11 to obtain the structure shown in FIG7 ;

[0072] In step S203 , liquid metal 14 is injected into the chamber 11 to obtain the TSV adapter plate as shown in FIG. 1 . The liquid metal and the first structural layer include the same material elements.

[0073] Specifically, the above-mentioned liquid metal can be any suitable low-melting-point, amorphous metal material, such as gallium, rubidium and cesium, or an alloy including the metal material; the above-mentioned first structural layer is a metal compound including the metal material, and those skilled in the art can flexibly set the materials of the liquid metal and the first structural layer according to actual needs.

[0074] Through the above embodiment, a substrate is first provided, wherein the substrate has a cavity and a first structural layer covering part of the inner wall of the cavity; then a through-hole structure penetrating the substrate is formed on one side of the cavity; finally, liquid metal is injected into the cavity to obtain a TSV adapter plate. The present disclosure forms liquid metal in the cavity inside the TSV adapter plate, and utilizes the high thermal conductivity of the liquid metal to improve the heat dissipation performance of the TSV adapter plate, thereby alleviating the problem of poor heat dissipation capacity of the TSV adapter plate in the prior art. Moreover, the fully interconnected domain cavity of the through-hole structure located on one side of the cavity naturally forms a planar heat pipe micro-needle fin liquid absorption core structure, which provides a more favorable spatial environment for the adaptive heat return of the liquid metal. In addition, the material type of the first structural layer and the substrate are different, and the first structural layer and the liquid metal have the same material elements. In this way, the first structural layer plays a heterogeneous transition role between the substrate and the liquid metal, so that the liquid metal has better fluidity in the cavity, thereby further ensuring a better overall cooling effect on the TSV adapter plate.

[0075] Specifically, the material of the first structural layer includes a gallium-containing compound, and the liquid metal includes gallium. Gallium-based liquid metal has excellent properties such as good fluidity, low loss, and high thermal conductivity. This can further improve the heat dissipation performance of the TSV adapter board, thereby further enhancing the overall structural strength and signal transmission stability of the TSV adapter board.

[0076] Furthermore, the substrate is a silicon substrate, the first structural layer is a gallium nitride layer or a gallium arsenide layer, and the liquid metal is liquid gallium. Liquid gallium has excellent temperature uniformity. The gallium nitride layer or gallium arsenide layer can enhance the metal thermal glide velocity of liquid gallium, thereby strengthening the radial passive heat dissipation capability of the TSV adapter board without affecting the relevant standard processes of the TSV adapter board.

[0077] According to another specific embodiment of the present disclosure, a substrate is provided, including: providing a first sub-substrate 17, and removing a portion of the first sub-substrate 17, as shown in FIG3, to form a second groove 18 extending from the surface of the first sub-substrate 17 into the first sub-substrate 17; as shown in FIG4, forming a first sub-structure layer 19 at the bottom of the second groove 18; providing a second sub-substrate 20, and removing a portion of the second sub-substrate 20, as shown in FIG3, to form a second sub-structure layer 19 extending from the second sub-substrate 20. 4 , a second substructure layer 22 is formed at the bottom of the third groove 21, and the first substructure layer 19 and the second substructure layer 22 constitute the first structure layer 12; with the surface of the first subsubstrate 17 and the surface of the second subsubstrate 20 as the bonding interface, the first subsubstrate 17 formed with the first substructure layer 19 and the second subsubstrate 20 formed with the second substructure layer 22 are bonded to obtain the substrate 10 shown in FIG6 , and the second groove 18 and the third groove 21 in FIG4 constitute the chamber 11 in FIG6 . In this embodiment, a substrate with a cavity inside is obtained by bonding a first sub-substrate having a second groove and a second sub-substrate having a third groove, thereby ensuring that the obtained substrate has uniform thermal distribution, good shock resistance, and high connection strength, thereby further ensuring that the TSV adapter board has strong compressive stress, so that the TSV adapter board can withstand relatively harsh working environments and has high process compatibility; and, the first sub-structure layer and the second sub-structure layer respectively cover the bottom of the second groove and the third groove, further ensuring that the liquid metal has good flow properties on the first sub-structure layer and the second sub-structure layer, and a faster thermal sliding speed, so that the liquid metal has a better temperature uniformity effect, further improving the heat dissipation capacity of the entire TSV.

[0078] Removing a portion of the first sub-substrate to form a second trench extending from the surface of the first sub-substrate into the first sub-substrate includes: performing deep reactive ion etching on the first sub-substrate using an ion etcher to form the second trench. Removing a portion of the second sub-substrate to form a third trench extending from the surface of the second sub-substrate into the second sub-substrate includes: performing deep reactive ion etching on the second sub-substrate using an ion etcher to form the third trench.

[0079] Forming a first substructure layer at the bottom of the second trench comprises: forming a first preliminary structure layer on the exposed surface of the first sub-substrate formed with the second trench using a metal organic vapor phase epitaxy process; and etching the formed first preliminary structure layer using a wet etcher, retaining only the first preliminary structure layer at the bottom of the second trench, thereby obtaining the first substructure layer. Forming a first substructure layer at the bottom of the second trench comprises: forming a second preliminary structure layer on the exposed surface of the second sub-substrate formed with the third trench using a metal organic vapor phase epitaxy process; and etching the formed second preliminary structure layer using a wet etcher, retaining only the second preliminary structure layer at the bottom of the third trench, thereby obtaining the second substructure layer.

[0080] In the process of forming the first and second preliminary structural layers using a metal organic vapor phase epitaxy process, a silicon wafer is placed in a reaction chamber, and trimethyl gallium and ammonia NH3 are simultaneously introduced into the reaction chamber to react. The reaction chemical formula is: Ga(CH3)3+NH3→GaN+3CH4

[0081] Because GaN exerts high tensile stress on the silicon surface, cracks and roughness may occur in GaN grown on silicon substrates. To epitaxially grow high-quality GaN, a layer of thermally stable HT-AlN can be added to the silicon substrate as a buffer layer to convert the tensile stress of GaN into compressive stress. This can greatly improve the growth quality of the GaN epitaxial layer. However, in order to increase the surface tension difference, the roughness of the GaN-Si heterointerface needs to be increased. Therefore, the quality requirements for GaN in the manufacturing process disclosed in this invention are much lower than those for epitaxial GaN used as semiconductor device substrates. Therefore, a 100nm GaN epitaxial process can be directly grown on a silicon substrate to obtain a nanostructured heterointerface that meets certain roughness requirements.

[0082] The specific process of etching the above-mentioned first preliminary structure layer and the above-mentioned second preliminary structure layer using a wet etcher is to immerse the first sub-substrate formed with the above-mentioned first preliminary structure layer and the second sub-substrate formed with the above-mentioned second preliminary structure layer in a KOH solution, and etch the epitaxial gallium nitride layer with a thickness of 100 nm through an electrochemical reaction to form the required graphical heterojunction.

[0083] In addition, the surface of the first sub-substrate 17 and the surface of the second sub-substrate 20 are used as bonding interfaces, and the first sub-substrate 17 formed with the first sub-structure layer 19 and the second sub-substrate 20 formed with the second sub-structure layer 22 are bonded to obtain the substrate 10 shown in FIG6 , and the second groove 18 and the third groove 21 constitute the chamber, including: using the surface of the first sub-substrate 17 and the surface of the second sub-substrate 20 as bonding interfaces, the first sub-substrate 17 formed with the first sub-structure layer 19 and the second sub-substrate 20 formed with the second sub-structure layer 22 are bonded to obtain the initial substrate 28 shown in FIG5 ; and chemical mechanical polishing is performed on the surface of the initial substrate so that the thickness of the initial substrate after grinding reaches a preset thickness, such as 60 μm. Of course, the thickness of the substrate is not limited to the above-mentioned 60 μm, and this value can be determined according to the actual process.

[0084] In practical applications, the depth of the cavity covered with the first structural layer may be 100 μm, or any other appropriate value.

[0085] Optionally, a through-hole structure penetrating the substrate is formed on one side of the chamber, including: removing part of the substrate to form a fourth initial groove extending from the first surface of the substrate into the substrate; forming an insulating layer, a barrier layer and a conductive layer in sequence on the sidewalls of the fourth initial groove to obtain a fourth groove 29 as shown in FIG7 ; grinding the substrate 10 along the second surface of the substrate 10 until the fourth groove 29 is penetrated to obtain the through-hole structure 13 as shown in FIG8 , where the first surface and the second surface are two opposite surfaces of the substrate 10.

[0086] Specifically, the thickness of the substrate after the through-hole structure is formed may be 150 μm. Those skilled in the art may flexibly set the thickness of the substrate after grinding according to actual process requirements.

[0087] According to another optional embodiment of the present disclosure, after obtaining the above-mentioned through-hole structure, the above-mentioned method further includes: as shown in Figures 8 and 9, performing redistribution on the above-mentioned first surface and the above-mentioned second surface to obtain a first metal connection structure 27 in contact with the above-mentioned through-hole structure 13; and forming a second metal connection structure 37 on the surface of the above-mentioned first metal connection structure 27 away from the above-mentioned substrate 10. The above-mentioned first metal connection structure and the above-mentioned second metal connection structure meet the subsequent connection and packaging requirements of the TSV adapter board.

[0088] In actual applications, those skilled in the art may select any suitable metal material as the material for the first and second metal connection structures. The materials of the first and second metal connection structures may be the same or different, and this disclosure does not impose any specific limitations on this. In one alternative, the material of the first metal connection structure is copper, and the material of the second metal connection structure is gold.

[0089] Furthermore, a magnetron sputtering machine may be used to perform rewiring on the first surface and the second surface.

[0090] In another optional solution, liquid metal is injected into the above-mentioned chamber to obtain the above-mentioned TSV adapter plate, including: as shown in Figure 10, forming a first trench 15 that sequentially penetrates the above-mentioned substrate 10 and the above-mentioned first structural layer 12 to the above-mentioned chamber 11; as shown in Figure 11, injecting the above-mentioned liquid metal 14 into the above-mentioned chamber 11 through the above-mentioned first trench 15; as shown in Figure 1, filling the above-mentioned first trench 15 with a second structural layer 16 and solidifying the above-mentioned second structural layer 16. By forming the first trench connecting the chamber, the above-mentioned liquid metal is injected into the chamber, and the above-mentioned chamber filled with the liquid metal is sealed by the above-mentioned second structural layer.

[0091] Specifically, curing the second structural layer includes placing the structure having the second structural layer formed thereon into a high-temperature oven and setting the temperature of the high-temperature oven to a predetermined temperature to cure the second structural layer. Forming a first trench sequentially penetrating the substrate and the first structural layer into the chamber includes performing deep reactive ion etching on the substrate using an ion etcher to form the first trench.

[0092] In specific applications, technicians in this field can select the value of the above-mentioned preset temperature according to the material of the above-mentioned second structural layer. For example, when the above-mentioned second structural layer is a high-temperature ceramic adhesive, the above-mentioned preset temperature can be 200°C. This temperature allows the ceramic adhesive to be completely cured, ensuring stable connection and packaging effects.

[0093] The process step of forming the first metal connection structure can be performed after injecting liquid metal into the chamber, or after obtaining the through-hole structure and before injecting liquid metal into the chamber. In the case where the first metal connection structure is formed before injecting liquid metal into the chamber, a first trench 15 is formed that sequentially penetrates the substrate 10 and the first structural layer 12 to the chamber 11, including: as shown in Figures 9 and 10, using an ion etcher to sequentially etch and remove a portion of the first metal connection structure 27, a portion of the substrate 10, and a portion of the first structural layer 12 using a deep reactive ion etching process to form the first trench 15.

[0094] In an embodiment of the present disclosure, the liquid metal is injected into the chamber through the first groove, comprising: placing the substrate formed with the first groove on a heating platform, the temperature of the heating platform being greater than or equal to the melting point of the liquid metal; injecting the liquid metal into the chamber through the first groove in a protective gas atmosphere; collecting image information of the chamber during the injection of the liquid metal; and adjusting the local temperature of the heating platform during the injection process based on the image information to eliminate some bubbles in the liquid metal material. In this embodiment, the liquid metal is injected forcefully in a protective gas atmosphere, thereby avoiding the problem of liquid metal contacting with air, which may cause oxidation and denaturation of the liquid metal. In addition, by collecting image information of the chamber during the injection of the liquid metal, the local temperature of the heating platform of the heating chamber is adjusted based on the image information, thereby eliminating the problem of protective gas bubble clogging during the injection process and ensuring high injection quality.

[0095] Specifically, as shown in Figure 12, the above-mentioned heating platform 30 is located in the perfusion chamber 31, the above-mentioned heating platform 30 includes a plurality of heating arrays, the above-mentioned perfusion chamber 31 also includes a perfusion structure 32 filled with the above-mentioned liquid metal, an image acquisition device 33 and a light source 34, the above-mentioned perfusion structure 32 is located above the above-mentioned heating platform 30, the above-mentioned light source 34 is located on the side of the above-mentioned heating platform 30, and the above-mentioned image acquisition device 33 is located at least one of the following: a side of the above-mentioned perfusion structure 32 away from the above-mentioned heating platform 30, or a side of the above-mentioned heating platform 30 away from the above-mentioned light source 34.

[0096] On this basis, the liquid metal is injected into the chamber through the first groove in a protective gas atmosphere, including: introducing nitrogen into the injection chamber 31; opening the injection structure 32 in the nitrogen atmosphere to inject the liquid metal into the chamber through the first groove; collecting image information of the chamber during the injection of the liquid metal, including: turning on the light source 34 during the injection of the liquid metal; collecting image information of the chamber through the image acquisition device 33 and sending it to a display so that the display displays the image information; adjusting the local temperature of the heating platform during the injection process based on the image information, including: determining whether there are bubbles larger than a preset diameter based on the image information; if there are bubbles larger than the preset diameter, adjusting the heating temperature of the corresponding heating array based on the location of the bubbles. Adjusting the heating temperature of the corresponding heating array based on the location of the bubbles includes: determining an input voltage based on the location of the bubbles, and adjusting the input voltage of the corresponding heating array to adjust its heating temperature.

[0097] The above method also includes: determining whether the volume of the liquid metal in the above chamber is greater than or equal to a predetermined volume based on the above image information; and controlling the above perfusion structure to stop perfusion when it is determined that the volume of the liquid metal in the above chamber is greater than or equal to the predetermined volume.

[0098] Specifically, those skilled in the art can flexibly set the specific value of the predetermined volume according to actual needs, such as setting the predetermined volume to 90% of the total volume of the chamber. The method of determining the volume of the liquid metal in the chamber based on the image information can convert the predetermined volume into the corresponding chamber height; and determine whether the volume reaches the predetermined volume based on the actual chamber height.

[0099] Due to the irregular and non-uniform arrangement of the TSV array, when potting liquid metal into the chamber of the TSV adapter plate, an optimal wetting path with minimum flow resistance is inevitably generated, resulting in a large number of nitrogen bubbles being blocked in the chamber and unable to be discharged in time. Therefore, during the potting process, the Marangoni effect is utilized to adjust the input voltage of a portion of the heating array on the heating platform to create a controllable temperature gradient in the chamber. This changes the distribution of the super-wetting thermal slip zone at the heterogeneous interface in real time and optimizes the wetting path of the liquid metal in the chamber.

[0100] In one specific embodiment, as shown in Figure 12 , two image acquisition devices are provided. One image acquisition device 33 is located on the side of the perfusion structure 32 away from the heating platform 30 and is an infrared microscope camera. It utilizes the mid-infrared transmittance of the silicon substrate to capture chamber images and monitor the liquid metal filling efficiency, the flow state of the liquid metal within the chamber, and the regional temperature changes of the liquid metal in real time. Another image acquisition device 33 is located on the side of the heating platform 30 away from the light source 34 and is a high-speed camera. The perfusion chamber 31 can be an acrylic nitrogen glove box with an exterior length, width, and height of 1200 mm, 800 mm, and 700 mm, respectively. It has a glove port 35 on each side of the box, and a balloon inlet and outlet valve 36 on one side for nitrogen exchange. The heating platform is 120 mm long and 150 mm wide, respectively. Its three-axis displacement range is 60 mm forward and backward, 35 mm left and right, and 80 mm vertically with an accuracy of 0.1 m. The perfusion structure is a syringe with a needle. The light source is a dense LED industrial-grade cold light source with an adjustable blue tone, which can provide lighting in a horizontal direction.

[0101] According to some other embodiments, as shown in FIG13 , the substrate 10 includes multiple spaced-apart cavities 11. Step S202 involves forming a through-hole structure extending through the substrate on one side of the cavities, including forming one through-hole structure 13 on one side of each cavity, with the through-hole structures alternating with the cavities. After filling the first trench 15 with the second structural layer 16, subsequent processing steps, such as cutting and packaging, can be performed to complete the final product. These processing steps can be tailored to specific needs to produce a fully functional and reliable embedded liquid metal TSV product. In this product, the TSV adapter plate has a thickness of 200μm and an outer wall composed of silicon. A 100nm-thick nanostructured gallium nitride heterojunction is epitaxially formed on the upper and lower surfaces of the cavities. Excluding the gallium nitride heterojunction, the cavities are 100μm high to accommodate the gallium-based liquid metal. The through-hole structure in the TSV adapter plate is a nested cylindrical structure.

[0102] The TSV adapter board disclosed in the present invention can be applied to transceivers. Figure 14 exemplarily shows an exploded view of a single-band RF T / R (transmitter / Receiver) subarray TSV adapter board, with two RF PA (Power Amplifier) ​​chips on the top. The bottom of the internal liquid metal flow area is a square with a side length of 12.5 mm, and its chamber height is 100 μm. There are regular hexagonal ground wires around the internal TSV signal transmission area. The layout of the regular hexagonal ground wires helps to keep the minimum distance between the ground wires equal, thereby minimizing the inductance and resistance of the circuit. This coaxial TSV array structure can provide good shielding effect, reduce mutual interference with surrounding signals, and help ensure stable signal transmission and reduce interference.

[0103] In this disclosure, the relevant parameters of gallium-based liquid metal at the heterogeneous interface, such as dynamic viscosity and sliding force, obtained from the cross-scale thermal slip simulation of superwetting at liquid metal nanostructured heterojunctions, are combined to construct a heat dissipation model for the TSV adapter plate described above. The simulation results are shown in Figure 18. As shown in Figure 18(a), under natural convection conditions with a CPU power of 6W and an ambient temperature of 20°C, the maximum temperature of the TSV adapter plate reaches 56°C, which is lower than the maximum temperature of the standard TSV adapter plate in the prior art, and the temperature difference between the two is 36.2°C.

[0104] The TSV adapter board disclosed herein is applied to the RF T / R subframe. Due to the low density of the TSV array in the RF T / R subarray TSV adapter board, the gallium-based liquid metal cannot be isolated by the TSV array, forming numerous local adaptive thermal return paths. As shown in Figure 18(b), under natural convection conditions with an RF PA chip power of 6W and an ambient temperature of 20°C, the maximum temperature on the liquid metal-embedded RF T / R subarray TSV adapter board reached 68°C, 31°C lower than the maximum temperature of a standard RF T / R subarray TSV adapter board. In summary, the TSV adapter board disclosed herein has excellent temperature uniformity. By enhancing the thermal glide velocity of the gallium-based liquid metal through the epitaxial nanostructured gallium nitride layer, it can strengthen the radial passive heat dissipation capability of the TSV adapter board without affecting the existing standard processes related to the adapter board.

[0105] Table 1 TSV array high frequency signal inter-column loss simulation parameter setting table

[0106] For two typical TSV array structures (parallel array and quasi-coaxial array) in a single CPU computing unit and a single-band RF front-end T / R subarray, high-frequency signal inter-column loss simulation optimization was performed using water, silicon, and gallium as the filler between the TSV arrays, as shown in Figures 15(a), (b), (c), and (d). The simulation boundary conditions are shown in Table 1.

[0107] In the model, the chamber is filled with gallium-based liquid metal. Because the geometric morphology of the liquid medium changes little and has little effect on the electrical signal, the material inside the chamber is treated as a complete heat dissipation medium in the simulation. From the simulation results, it can be seen that benefiting from the excellent signal shielding performance of gallium-based liquid metal, the high-frequency signal inter-column loss of both TSV adapters filled with gallium-based liquid metal is significantly better than that of the embedded water-cooled adapter, and is less than 0.5dB in the range of 1-40GHz. Its broadband performance is also improved compared to silicon. The relevant formulas involved in the simulation are as follows:

[0108] Equation (1) is the ABCD parameter matrix (also called transmission line parameters) of the TSV array, which is given by extracting the RLCG (resistance, inductance, capacitance, and conductance) parameters, where Z0, θ, and h TSV are the characteristic impedance, propagation constant, and TSV height of the C-TSV array, respectively. Based on this formula, the return loss (S21) of the structure can be obtained, which can be specifically seen in formula (2).

[0109] To achieve a TSV adapter board with high process compatibility, in addition to optimizing its heat dissipation and temperature uniformity and electrical signal shielding performance, optimizing the cumulative stress of the adapter board under operating conditions is also essential. Stress simulation was performed on the TSV adapter board under operating conditions. The stress is primarily due to thermal strain caused by temperature changes during operation. The specific formula is as follows: ε T =α(T2-T1)=αΔT(4)

[0110] Where α is the thermal expansion coefficient of the material, L is the initial length of the object, ΔT is the change in length of the object at a certain temperature, and ε T is the strain of an object at a certain temperature. In this disclosure, the main structural component of the adapter plate is silicon, so the parameter setting is based on the thermal expansion coefficient of silicon. The stress on the object is expressed as follows: σ=E×ε T (5)

[0111] Where σ is the stress on the object.

[0112] In order to fully verify the stress and strain conditions of the TSV adapter board to be developed in the present disclosure under extreme working conditions, the present disclosure sets an external temperature condition of repeated cycling from 250-450°C, and conducts comprehensive simulations on the cumulative stress and strain of the single CPU computing unit TSV adapter board and the single-band RF T / R sub-array TSV adapter board, respectively. The final results are shown in Figures 16(a) and (b). For the single CPU computing unit TSV adapter board, the maximum residual stress is 0.49 GPa, and for the single-band RF T / R sub-array TSV adapter board, the maximum stress is 0.23 GPa. The maximum compressive stress of silicon (3.5-4 GPa) is much higher than this. Therefore, the TSV adapter board disclosed in the present disclosure is able to withstand relatively harsh working environments and has high process compatibility.

[0113] In space, the main components of cosmic rays are high-energy protons and some gamma rays. When high-energy protons are incident on semiconductor devices, the interaction mechanism between the incident protons and the semiconductor material is bremsstrahlung. When the protons approach the atomic nucleus and interact with the Coulomb field of the nucleus, the direction of the proton's motion is deflected and it is rapidly decelerated, and the energy is converted into radiation. The formula is as follows:

[0114] Among them, E is the electric field strength vector, q is the charge of the charged particle, r is the distance between the observation point and the charged particle, c is the speed of light in vacuum, ε0 is the dielectric constant of vacuum, a is the acceleration vector, and e r is the unit radial vector pointing from the charged particle to the space, v is the velocity of the charged particle, B is the magnetic induction intensity vector, S is the energy flow density vector, θ is the direction of the particle's advance and er Angle.

[0115] The interaction mechanism between gamma rays and semiconductor materials is primarily the Compton effect. A gamma photon undergoes an elastic collision with an atom's outer-shell electrons (which can be considered free electrons). The gamma photon transfers only a portion of its energy to the atom's outer-shell electrons, causing them to break free from the nucleus and be ejected from the atom. The photon itself changes direction. The ejected electrons, called Compton electrons, can continue to interact with the medium. The Compton effect formula is as follows:

[0116] Where Δλ is the difference between the incident wavelength λ0 and the scattered wavelength λ, h is Planck's constant, c is the speed of light, m ​​is the rest mass of the electron, and φ is the scattering angle.

[0117] In addition to adding silver to the gallium-based alloy to improve heat dissipation and electromagnetic shielding, a certain proportion of lead can also be added. By uniformly distributing high-mass atoms like silver and lead within the chamber, the radiation resistance of the TSV interposer can be further enhanced. Single-particle and total-dose simulations were performed on a 200μm-thick silicon substrate, a 200μm-thick silicon substrate embedded with 100μm of gallium, a 200μm-thick silicon substrate embedded with 100μm of Ga65In20.5Sn9.5Pb5, and a 3.8mm molybdenum-copper cover, as shown in Figures 17 (a) and (b) and Tables 2 and 3. In the single-particle simulations, under irradiation with a single proton of 6MeV energy, the proton can penetrate the 200μm silicon substrate, while the 100μm of metal gallium, the 100μm of gallium-based alloy, and the 3.8mm molybdenum-copper cover block the proton, preventing radiation damage to the internal devices. Under 10MeV proton irradiation, the 3.8mm molybdenum-copper cover plate blocked the protons. While the 100μm metal gallium and 100μm gallium-based alloy layers couldn't completely block the protons, they effectively protected the underlying materials, reducing energy deposition in the 50μm-thick silicon layer on the back of the TSV adapter plate. A total dose simulation, using 100 gamma particles with 6MeV energies, showed that energy deposition occurred in both the embedded metal gallium and gallium-based alloy, accompanied by the generation of negative electrons and protons. Therefore, the embedded liquid metal TSV adapter plate in this design provides enhanced radiation protection for the internal structure.

[0118] Table 2 Energy deposition of high-energy proton single-particle simulation

[0119] Table 3 Simulated energy deposition of total γ-particle dose

[0120] According to another aspect of the present disclosure, a three-dimensional chip is provided, comprising: any one of the above-mentioned TSV adapter boards, or a TSV adapter board obtained by using any one of the above-mentioned methods for manufacturing the TSV adapter boards.

[0121] The above-mentioned three-dimensional chip includes any one of the above-mentioned TSV adapter plates, or a TSV adapter plate made by any one of the above-mentioned methods, in which the above-mentioned through-hole structure passes through the substrate, the above-mentioned chamber is located inside the above-mentioned substrate and on one side of the above-mentioned through-hole structure, the first structural layer covers part of the inner wall of the chamber, and the liquid metal is located in the chamber. The present invention forms liquid metal in the chamber inside the TSV adapter plate, and utilizes the high thermal conductivity of the liquid metal to improve the heat dissipation performance of the TSV adapter plate, thereby alleviating the problem of poor heat dissipation capacity of the TSV adapter plate in the prior art. In addition, the fully connected domain cavity of the through-hole structure located on one side of the chamber naturally forms a planar heat pipe micro-needle fin liquid absorption core structure, which provides a more favorable spatial environment for the adaptive heat reflow of the liquid metal. In addition, the first structural layer and the substrate are made of different materials, and the first structural layer and the liquid metal have the same material elements. In this way, the first structural layer acts as a heterogeneous transition between the substrate and the liquid metal, making the liquid metal more fluid in the chamber, thereby further ensuring a better overall cooling effect on the TSV adapter plate.

[0122] It should also be noted that the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, commodity, or apparatus that includes a list of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, commodity, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a..." does not preclude the presence of additional identical elements in the process, method, commodity, or apparatus that includes the element.

[0123] The foregoing description is merely a preferred embodiment of the present disclosure and is not intended to limit the present disclosure. Those skilled in the art will readily appreciate that various modifications and variations are possible. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present disclosure shall be included within the scope of protection of the present disclosure.

Claims

1. A TSV adapter board, wherein: include: A substrate, wherein the interior of the substrate has a cavity and a first structural layer covering a portion of an inner wall of the cavity, wherein a material type of the first structural layer is different from a material type of the substrate; a through-hole structure, penetrating the substrate and located at one side of the chamber; Liquid metal is located in the chamber, and the liquid metal and the first structural layer include the same material element.

2. The TSV adapter board according to claim 1, wherein: The TSV adapter plate further includes: A first groove, penetrating a portion of the surface of the substrate and a portion of the surface of the first structural layer, and communicating with the chamber; The second structural layer is located in the first groove.

3. The TSV adapter board according to claim 1, wherein: The substrate comprises: a first sub-substrate; a second groove extending from the surface of the first sub-substrate into the first sub-substrate; A first substructure layer, located at the bottom of the second groove; a second sub-substrate, a surface of the second sub-substrate being bonded to a surface of the first sub-substrate; a third groove extending from the surface of the second sub-substrate into the second sub-substrate, the second groove corresponding to the third groove to form the chamber; The second substructure layer is located at the bottom of the third groove, and the first substructure layer and the second substructure layer constitute the first structure layer.

4. The TSV adapter board according to claim 1, wherein: The through-hole structure comprises: a through hole penetrating the substrate and located at one side of the chamber; An insulating layer covering the hole wall of the through hole; A barrier layer is located on a surface of the insulating layer away from a hole wall of the through hole; The conductive layer is located on a surface of the barrier layer away from the insulating layer.

5. The TSV adapter board according to claim 1, wherein: The TSV adapter plate further includes: A first metal connection structure, located on the surface of the substrate, the first metal connection structure is in contact with the through-hole structure; The second metal connection structure is located on a surface of the first metal connection structure away from the substrate.

6. The TSV adapter board according to any one of claims 1 to 5, wherein: The material of the first structural layer includes a gallium-containing compound, and the liquid metal includes gallium.

7. The TSV adapter board according to any one of claims 1 to 5, wherein: The liquid metal also includes at least one of the following: silver, indium, tin, graphene, diamond nanoparticles, and boron nitride.

8. A method for manufacturing a TSV adapter plate according to any one of claims 1 to 7, wherein: include: Providing a substrate, wherein the interior of the substrate has a chamber and a first structural layer covering a portion of an inner wall of the chamber, wherein a material type of the first structural layer is different from a material type of the substrate; forming a through hole structure penetrating the substrate on one side of the chamber; Liquid metal is injected into the chamber to obtain the TSV adapter plate, wherein the liquid metal and the first structural layer include the same material element.

9. The method according to claim 8, wherein: Injecting liquid metal into the chamber to obtain the TSV adapter plate, comprising: forming a first groove sequentially penetrating the substrate and the first structural layer into the chamber; injecting the liquid metal into the chamber through the first groove; A second structure layer is filled in the first groove, and the second structure layer is cured.

10. The method according to claim 9, wherein: Injecting the liquid metal into the chamber through the first groove comprises: placing the substrate formed with the first groove on a heating platform, wherein the temperature of the heating platform is greater than or equal to the melting point of the liquid metal; injecting the liquid metal into the chamber through the first groove in a protective gas atmosphere; During the injection of the liquid metal, collecting image information of the chamber; According to the image information, the local temperature of the heating platform during the injection process is adjusted to eliminate some bubbles in the liquid metal material.

11. The method according to claim 10, wherein: The heating platform is located in the perfusion chamber, the heating platform includes a plurality of heating arrays, the perfusion chamber also includes a perfusion structure containing the liquid metal, an image acquisition device and a light source, the perfusion structure is located above the heating platform, the light source is located on the side of the heating platform, and the image acquisition device is located at least one of the following: a side of the perfusion structure away from the heating platform, a side of the heating platform away from the light source, Injecting the liquid metal into the chamber through the first groove in a protective gas atmosphere comprises: introducing nitrogen into the injection chamber; opening the injection structure in the nitrogen atmosphere to inject the liquid metal into the chamber through the first groove, During the injection of the liquid metal, collecting image information of the chamber includes: during the injection of the liquid metal, turning on the light source; collecting the image information of the chamber by the image acquisition device and sending it to a display, so that the display displays the image information; According to the image information, the local temperature of the heating platform during the injection process is adjusted, including: determining whether there are bubbles larger than a preset diameter according to the image information; if there are bubbles larger than the preset diameter, adjusting the corresponding heating temperature of the heating array according to the position of the bubbles.

12. The method according to any one of claims 8 to 10, wherein: A substrate is provided, comprising: Providing a first sub-substrate, and removing a portion of the first sub-substrate to form a second groove extending from a surface of the first sub-substrate into the first sub-substrate; forming a first substructure layer at the bottom of the second trench; Providing a second sub-substrate, and removing a portion of the second sub-substrate to form a third groove extending from a surface of the second sub-substrate into the second sub-substrate; forming a second substructure layer at the bottom of the third trench, wherein the first substructure layer and the second substructure layer constitute the first structure layer; The first sub-substrate having the first sub-structure layer and the second sub-substrate having the second sub-structure layer are bonded with each other using the surface of the first sub-substrate and the surface of the second sub-substrate as bonding interfaces to obtain the substrate, wherein the second groove and the third groove constitute the chamber.

13. The method according to any one of claims 8 to 10, wherein: A through hole structure penetrating the substrate is formed on one side of the chamber, comprising: removing a portion of the substrate to form a fourth initial trench extending from the first surface of the substrate into the substrate; forming an insulating layer, a barrier layer and a conductive layer in sequence on the sidewalls of the fourth initial trench to obtain a fourth trench; The substrate is ground along the second surface of the substrate until the fourth groove is penetrated to obtain the through-hole structure, and the first surface and the second surface are two opposite surfaces of the substrate.

14. The method according to claim 13, wherein: After obtaining the through-hole structure, the method further comprises: Rewiring is performed on the first surface and the second surface to obtain a first metal connection structure in contact with the through-hole structure; A second metal connection structure is formed on a surface of the first metal connection structure away from the substrate.

15. A three-dimensional chip, wherein: include: A TSV adapter board according to any one of claims 1 to 7, or a TSV adapter board obtained by the method for manufacturing a TSV adapter board according to any one of claims 8 to 14.

Images