Dielectric material, waveguide structure, photoelectric device, and preparation method

Abstract

The present application relates to the field of electrochemical batteries, and discloses a dielectric material, a waveguide structure, a photoelectric device, and a preparation method. The dielectric material is used for a photoelectric device, and the dielectric material comprises calcium silicate. The calcium silicate has both a high dielectric capability and a low refractive index, so that the calcium silicate can be applicable to the field of optical fiber communications. For example, the dielectric material can be directly deposited on a waveguide of the photoelectric device as a cladding by using a vapor deposition process, and the cladding can transmit a drive voltage to the waveguide to cause an electro-optic effect, particularly facilitating the improvement of the bandwidth and modulation efficiency of the photoelectric device and the reduction of the drive voltage of the photoelectric device, achieving the objective of optimizing the photoelectric performance of the photoelectric device.

Description

Dielectric material, waveguide structure, optoelectronic device and preparation method

[0001] This application claims priority to Chinese patent application No. 202310949545.6, filed on July 28, 2023, entitled “Dielectric materials, waveguide structures, optoelectronic devices and preparation methods,” the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present disclosure relates to the field of communication technology, and in particular to dielectric materials, waveguide structures, optoelectronic devices and preparation methods. Background Art

[0003] Currently, dielectric materials with high dielectric constants can be used to prepare dielectric layers with high dielectric capacity and high capacitance values, making them suitable for high-frequency and miniaturized electronic communication products.

[0004] However, some common high-dielectric-constant dielectric materials, such as barium titanate and lead titanate materials with titanite phase structure, are relatively limited in their application in optical fiber communications.

[0005] Public content

[0006] In view of this, the present disclosure provides dielectric materials, waveguide structures, optoelectronic devices, and preparation methods that can solve technical problems in related technologies. Specifically, the present disclosure includes the following technical solutions:

[0007] In one aspect, a dielectric material is provided. The dielectric material is used in a photovoltaic device, and the dielectric material includes calcium silicate.

[0008] Calcium silicate has space charge polarization, dipole polarization, and electron cloud polarization effects. On the one hand, calcium silicate has a high dielectric constant in both low-frequency and high-frequency electric fields, giving calcium silicate films a high dielectric capacity. On the other hand, calcium silicate has a low refractive index, which makes the calcium silicate film's absorption coefficient for light extremely low, thereby avoiding light loss. Calcium silicate films have both high dielectric capacity and a low refractive index, making them suitable for use in the field of optical fiber communications. For example, a vapor deposition process can be used to deposit the dielectric material directly on the waveguide of an optoelectronic device as a cladding. This cladding enables the drive voltage to be transmitted to the waveguide to induce an electro-optical effect. This is particularly beneficial for improving the bandwidth and modulation efficiency of optoelectronic devices and reducing their drive voltage, thereby optimizing the optoelectronic performance of optoelectronic devices.

[0009] In some possible implementations, the mass percentage of the calcium silicate in the dielectric material is 100%.

[0010] In some possible implementations, the dielectric material further includes a doping material, and the doping material is selected from at least one of barium silicate and strontium silicate;

[0011] The mass percentage of the calcium silicate in the dielectric material is 20%-90%;

[0012] The mass percentage of the doping material in the dielectric material is 10%-80%.

[0013] On the one hand, barium silicate and strontium silicate have melting points close to those of calcium silicate and are chemically stable, which facilitates the formation of a film based on co-evaporation after mixing calcium silicate with at least one of barium silicate and strontium silicate, thereby preparing a cladding with high dielectric properties and a low refractive index.

[0014] On the other hand, although calcium silicate, barium silicate, and strontium silicate all have low refractive indices, they differ. By adjusting the doping ratio of barium silicate and / or strontium silicate, the refractive index of the dielectric material can be adjusted accordingly, making the refractive index of the dielectric material easily controllable. Specifically, the higher the calcium silicate content in the dielectric material, the lower the refractive index of the dielectric material.

[0015] In some possible implementations, the high-frequency dielectric constant of the dielectric material is 8-20, and the refractive index is 1.47-1.91.

[0016] Under the premise of meeting the respective limited ranges of high-frequency dielectric constant and refractive index, the higher the calcium silicate content in the dielectric material, the lower its refractive index and the lower its high-frequency dielectric constant. Conversely, the higher the calcium silicate content, the higher its refractive index and the higher its high-frequency dielectric constant.

[0017] On the other hand, a waveguide structure is provided, which includes a substrate, a waveguide, a cladding and a buried layer, wherein the cladding is coated on the waveguide, and the whole consisting of the waveguide and the cladding, the buried layer and the substrate are stacked in sequence, and the cladding is made of any of the above-mentioned dielectric materials.

[0018] The waveguide structure provided by the embodiment of the present disclosure has all the advantages of the above-mentioned dielectric materials. Based on the high dielectric properties and low refractive index characteristics of the cladding, the optoelectronic performance of the waveguide structure provided by the embodiment of the present disclosure can be optimized.

[0019] The above-mentioned dielectric material provided by the embodiment of the present disclosure is used to form the cladding of the waveguide. On the one hand, the cladding can transmit the driving voltage from the signal power supply to the waveguide, thereby causing an electro-optical effect (the electro-optical effect refers to the change in the refractive index of the waveguide under the electric field, and the refractive index causes the change of the optical signal in the waveguide, realizing the modulation of the light by electricity). The stronger the dielectric capacity of the cladding, the greater the voltage it transmits. The lower the refractive index of the cladding, the more light is confined to the waveguide, thereby enhancing the photoelectric interaction, which is beneficial to improving the bandwidth and modulation efficiency of the optoelectronic device, and reducing the driving voltage of the optoelectronic device, making the optoelectronic device suitable for optical communication systems such as data centers and telecommunications networks. On the other hand, the low absorption loss of the cladding to light makes the absorption coefficient of the cladding to light extremely low, which is beneficial to avoiding light loss.

[0020] In some possible implementations, the thickness of the cladding is submicron level.

[0021] In some possible implementations, the buried layer is prepared by using any of the above-mentioned dielectric materials.

[0022] On the other hand, an optoelectronic device is provided, comprising any one of the above-mentioned waveguide structures.

[0023] The waveguide structure has the characteristic of confining light. Based on the high dielectric properties and low refractive index of the cladding, light can be more confined in the waveguide structure. This not only optimizes the optoelectronic performance of the waveguide structure provided by the embodiment of the present disclosure, but also, based on the dielectric material being silicate, makes it more temperature-resistant.

[0024] In some possible implementations, the optoelectronic device is an electro-optical modulator. Types of electro-optical modulators include, but are not limited to, MZ interferometer modulators, microring resonator modulators, FP resonator modulators (FP-type modulators), photonic crystal modulators (e.g., Si-based optical modulators), and the like.

[0025] In another aspect, a method for preparing a waveguide structure is provided, the method comprising: providing a substrate having a buried layer;

[0026] A waveguide is prepared on the buried layer; and any of the above-mentioned dielectric materials is used to deposit a film on the waveguide through an evaporation process, thereby forming a cladding on the waveguide to obtain the waveguide structure.

[0027] The dielectric material is deposited into a film on the waveguide through an evaporation process, thereby forming a cladding layer on the waveguide to obtain the waveguide structure.

[0028] The waveguide structure fabrication method provided by the disclosed embodiments utilizes dielectric materials comprising at least one of calcium silicate, barium silicate, and strontium silicate. These dielectric materials have high and similar melting points, enabling them to be stably deposited into films using evaporation processes such as electron beam evaporation. The cladding layer can then be directly deposited onto the waveguide. The evaporation process's unique characteristics allow for controllable cladding thickness, facilitating the production of cladding of arbitrary thickness, easily controlled to the submicron level, making it suitable for optoelectronic devices.

[0029] The method for preparing a waveguide structure provided by the embodiment of the present disclosure not only has the advantages of a simple preparation process, good repeatability, and ease of large-scale production, but also has strong compatibility with waveguides, can be applied to the preparation of claddings in various optoelectronic devices, and has high versatility.

[0030] In some possible implementations, the dielectric material is obtained by the following method:

[0031] Provide dielectric raw materials;

[0032] The dielectric raw material is subjected to impurity removal and crushing treatment to obtain the dielectric material.

[0033] By removing impurities and crushing the dielectric raw materials, impurities are removed, resulting in a high-purity dielectric material and improving the optoelectronic performance of the cladding. Furthermore, the particle size of the dielectric material is made more suitable for electron beam evaporation, resulting in a smooth and dense cladding and reducing defects. Furthermore, calcium silicate, barium silicate, and strontium silicate raw materials are readily available and inexpensive, which helps reduce the production cost of optoelectronic devices, particularly the cladding.

[0034] In some possible implementations, the evaporation process is an electron beam evaporation process, and the electron beam evaporation process satisfies at least one of the following evaporation conditions:

[0035] The preheating current of the electron beam gun on the dielectric material is 60mA-90mA;

[0036] The pre-melting current of the electron beam gun on the dielectric material is 0.10A-0.15A;

[0037] The evaporation current of the electron beam gun on the dielectric material satisfies the evaporation rate of 0.5A / s-0.8A / s.

[0038] Through the above-mentioned arrangement, the bonding effect between the prepared cladding and the waveguide can be improved, and the texture of the cladding can be made more uniform, flat and dense. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] FIG1 is a cross-sectional view of an exemplary waveguide structure provided by an embodiment of the present disclosure;

[0040] FIG2 is a cross-sectional view of another exemplary waveguide structure provided by an embodiment of the present disclosure;

[0041] FIG3 is a partial cross-sectional view of an exemplary MZ interferometric modulator provided by an embodiment of the present disclosure;

[0042] FIG4 is an XRD pattern of the cladding in the waveguide structure provided in Example 1;

[0043] FIG5 is a spectrum of light transmittance of the cladding in the waveguide structure provided in Example 1;

[0044] FIG6 is an ellipsometer spectrum of the cladding in the waveguide structure provided in Example 1;

[0045] FIG7 is a SEM image of the cladding in the waveguide structure provided in Example 1.

[0046] The reference numerals represent:

[0047] 100, substrate;

[0048] 200, waveguide;

[0049] 300, cladding;

[0050] 400, buried layer;

[0051] 500, metal electrode;

[0052] 600. Coating layer. DETAILED DESCRIPTION

[0053] The following will clearly and completely describe the technical solutions in the embodiments of the present disclosure in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of them. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present disclosure without making any creative efforts shall fall within the scope of protection of the present disclosure.

[0054] In the description of the embodiments of the present disclosure, the terms "upper" and "lower" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in FIG1 , and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0055] In the description of the embodiments of the present disclosure, the term "high-frequency dielectric constant" refers to the dielectric constant measured under high-frequency conditions, also known as the dynamic dielectric constant. The high-frequency conditions set in the embodiments of the present disclosure are 50 GHz or greater.

[0056] For some common dielectric materials with high dielectric constants, such as barium titanate and lead titanate materials with titanite phase structure, their applications in the field of optical fiber communications are relatively limited.

[0057] In response to the technical problems existing in the related art, on the one hand, an embodiment of the present disclosure provides a dielectric material, which can be used in optoelectronic devices, and the dielectric material includes calcium silicate (CaSiO3).

[0058] Calcium silicate has space charge polarization, dipole polarization, and electron cloud polarization effects. On the one hand, calcium silicate has a high dielectric constant in both low-frequency and high-frequency electric fields, giving calcium silicate films a high dielectric capacity. On the other hand, calcium silicate has a low refractive index, which makes the calcium silicate film's absorption coefficient for light extremely low, thereby avoiding light loss. The combination of high dielectric capacity and low refractive index makes calcium silicate film suitable for use in the field of optical fiber communications. For example, a vapor deposition process can be used to deposit the dielectric material directly on the waveguide of an optoelectronic device as a cladding. This cladding enables the drive voltage to be transmitted to the waveguide to induce an electro-optical effect. This is particularly beneficial for improving the bandwidth and modulation efficiency of optoelectronic devices and reducing their drive voltage, thereby optimizing the optoelectronic performance of optoelectronic devices.

[0059] In some instances, the dielectric constant and refractive index of calcium silicate films based on calcium silicate were tested. The dielectric constant of calcium silicate films in a low-frequency electric field (1kHz) was greater than 160, and the high-frequency dielectric constant in a high-frequency electric field (50GHz) was 6.3, demonstrating excellent dielectric properties. The refractive index of calcium silicate films ranges from 1.47 to 1.55. While the refractive index is primarily determined by the material, factors such as the thickness and purity of the calcium silicate film can also affect the refractive index measurement to a certain extent, causing the refractive index value to fluctuate within a certain range.

[0060] In some implementations, the dielectric material provided by the embodiments of the present disclosure includes 100% calcium silicate, that is, the mass percentage of calcium silicate in the dielectric material is 100%. Based on this approach, a cladding layer is a calcium silicate film layer.

[0061] In other implementations, the dielectric material provided by the embodiments of the present disclosure also includes a doping material, the doping material is selected from at least one of barium silicate (BaSiO3) and strontium silicate (SrSiO3), and the mass percentage of calcium silicate in the dielectric material is 20%-90%, and the mass percentage of the doping material in the dielectric material is 10%-80%.

[0062] Both barium silicate and strontium silicate have the characteristics of high dielectric constant and low refractive index. Among them, the dielectric constant of strontium silicate in a low-frequency electric field is greater than 240 and the refractive index is between 1.71-1.76. For example, a set of refractive index test data of strontium silicate is 1.73. The dielectric constant of barium silicate in a low-frequency electric field is greater than 310 and the refractive index is between 1.67-1.93. For example, a set of refractive index test data of barium silicate is 1.91. This can also help to obtain dielectric materials with both high dielectric constant and low refractive index.

[0063] At least one of barium silicate and strontium silicate is selected as a doping material to act synergistically with calcium silicate, which has at least the following advantages:

[0064] On the one hand, barium silicate and strontium silicate have similar melting points to calcium silicate and are chemically stable, making them suitable for film formation using an evaporation process. Thus, after calcium silicate is mixed with at least one of barium silicate and strontium silicate as a dielectric material, they can be co-evaporated to form a film, thereby preparing a high-quality cladding with a uniform texture, giving it the characteristics of high dielectric properties and a low refractive index.

[0065] On the other hand, although calcium silicate, barium silicate, and strontium silicate all have relatively low refractive indices, they differ. By adjusting the doping ratio of barium silicate and / or strontium silicate, the refractive index of the dielectric material can be adjusted accordingly, making the refractive index of the dielectric material easily controllable and improving its applicability to various types of optoelectronic devices. Specifically, the higher the calcium silicate content in the dielectric material, the lower the refractive index of the dielectric material.

[0066] In the embodiment of the present disclosure, the doping material can be barium silicate, strontium silicate, or a mixture of barium silicate and strontium silicate. For the mixture of barium silicate and strontium silicate, the mass ratio of barium silicate to strontium silicate can be any value, and the ratio between the two can be adjusted according to the actual requirements of the dielectric properties and refractive index of the dielectric material.

[0067] In some examples, the purity of calcium silicate, barium silicate, and strontium silicate is at least greater than 99%, and further, their purity is greater than 99.9%. The higher the purity, the more conducive it is to improving the photoelectric properties of the dielectric material and the more precise the control of the refractive index of the dielectric material.

[0068] The mass percentage of the doping material in the dielectric material is 10%-80%, which includes but is not limited to: 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, etc.

[0069] In some examples, the doping material is barium silicate. Accordingly, the dielectric material provided by the embodiments of the present disclosure includes calcium silicate and barium silicate, wherein the mass percentage of calcium silicate is 20%-90% and the mass percentage of barium silicate is 10%-80%.

[0070] For example, the sum of the mass percentages of calcium silicate and barium silicate can constitute 100%. Then, the mass percentage of barium silicate includes but is not limited to: 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, etc., and the mass percentage of calcium silicate is the remainder.

[0071] For example, an embodiment of the present disclosure provides a dielectric material comprising the following components in the following weight percentages: 70% calcium silicate and 30% barium silicate. Testing has shown that the dielectric material has a high-frequency dielectric constant (at 50 GHz) of 6.9 and a refractive index of 1.61.

[0072] In other examples, the doping material is strontium silicate. Accordingly, the dielectric material provided by the embodiments of the present disclosure includes calcium silicate and strontium silicate, wherein the mass percentage of calcium silicate is 20%-90% and the mass percentage of strontium silicate is 10%-80%.

[0073] For example, the sum of the mass percentages of calcium silicate and strontium silicate can constitute 100%. Then, the mass percentage of strontium silicate includes but is not limited to: 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, etc., and the mass percentage of calcium silicate is the remainder.

[0074] In some further examples, the doping material is a mixture of barium silicate and strontium silicate. Accordingly, the dielectric material provided by the embodiments of the present disclosure includes calcium silicate, barium silicate and strontium silicate, wherein the mass percentage of calcium silicate is 20%-90%, and the total mass percentage of barium silicate and strontium silicate is 10%-80%.

[0075] For example, the sum of the mass percentages of calcium silicate, barium silicate and strontium silicate can constitute 100%. Then, the mass percentage of the mixture of barium silicate and strontium silicate includes but is not limited to: 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, etc., and the mass percentage of calcium silicate is the remainder.

[0076] For the mixture of barium silicate and strontium silicate, the mass ratio of barium silicate to strontium silicate can be any mass ratio. For example, the mass ratio of barium silicate to strontium silicate is 1:0.1-10, which includes but is not limited to 1:0.1, 1:0.2, 1:0.3, 1:0.4, 1:0.5, 1:0.6, 1:0.7, 1:0.8, 1:0.9, 1:1, 1:2, 1:3, 1:4, 1:5, 1:6, 1:7, 1:8, 1:9, 1:10, etc.

[0077] The dielectric material provided in the embodiments of the present disclosure has a high-frequency dielectric constant of at least 8, for example, may be between 8 and 20, including but not limited to: 8-9, 8-10, 8-11, 8-12, 8-13, 8-14, 8-15, etc.

[0078] The dielectric material provided in the embodiments of the present disclosure has a refractive index of 1.47-1.91. In some examples, when the dielectric material is 100% calcium silicate, its refractive index is 1.47. When the dielectric material also includes barium silicate and / or strontium silicate, its refractive index is greater than 1.47, and the refractive index of the dielectric material can be adjusted accordingly based on the doping amount of barium silicate and / or strontium silicate.

[0079] Under the premise of meeting the respective limited ranges of high-frequency dielectric constant and refractive index, the higher the calcium silicate content in the dielectric material, the lower its refractive index and the lower its high-frequency dielectric constant. Conversely, the higher the calcium silicate content, the higher its refractive index and the higher its high-frequency dielectric constant.

[0080] On the other hand, an embodiment of the present disclosure further provides a waveguide structure, as shown in Figures 1 and 2, the waveguide structure includes a substrate 100, a waveguide 200, a cladding 300 and a buried layer 400, wherein the cladding 300 is coated on the waveguide 200, and the waveguide 200 and the cladding 300 constitute a whole, the buried layer 400, and the substrate 100 are stacked in sequence, wherein the cladding 300 is made of any of the above-mentioned dielectric materials.

[0081] The waveguide structure provided by the embodiment of the present disclosure has all the advantages of the above-mentioned dielectric materials. Based on the high dielectric properties and low refractive index characteristics of the cladding 300, the optoelectronic performance of the waveguide structure provided by the embodiment of the present disclosure can be optimized.

[0082] The above-mentioned dielectric material provided by the embodiment of the present disclosure is used to form the cladding 300 of the waveguide 200. On the one hand, the cladding 300 can transmit the driving voltage from the signal power supply to the waveguide 200, thereby causing an electro-optical effect (the electro-optical effect refers to the change in the refractive index of the waveguide 200 under the electric field, and the refractive index causes the change of the optical signal in the waveguide 200, realizing the modulation of the light by electricity). The stronger the dielectric capacity of the cladding 300, the greater the voltage it transmits. The lower the refractive index of the cladding 300, the more light is confined to the waveguide 200, thereby enhancing the photoelectric interaction, which is beneficial to improving the bandwidth and modulation efficiency of the optoelectronic device, and reducing the driving voltage of the optoelectronic device, making the optoelectronic device suitable for optical communication systems such as data centers and telecommunications networks. On the other hand, the cladding 300 of this material has an extremely low absorption coefficient of light, which helps to avoid light loss.

[0083] Among them, the waveguide 200 can be prepared by electro-optical crystals, such as lithium niobate (LiNbO3), gallium arsenide (GaAs), lithium tantalate (LiTaO3), etc. Common waveguide types include ridge waveguides, strip waveguides, etc. For example, Figure 1 illustrates that the waveguide 200 is a ridge waveguide, and Figure 2 illustrates that the waveguide 200 is a strip waveguide.

[0084] The buried layer 400 is located between the substrate 100 and the waveguide 200 . The buried layer 400 may be made of silicon dioxide. The buried layer 400 may also be made of any of the above-mentioned dielectric materials provided in the embodiments of the present disclosure.

[0085] In some examples, the buried layer 400 is made of any of the dielectric materials provided in the embodiments of the present disclosure. The buried layer made of the dielectric material provided in the embodiments of the present disclosure has the effect of increasing the bandwidth of the optoelectronic device.

[0086] In some examples, the substrate 100 is a silicon substrate, the waveguide 200 is a lithium niobate waveguide, and the cladding 300 and the buried layer 400 are both made of the dielectric material provided by the embodiments of the present disclosure.

[0087] In some examples, the thickness of the cladding 300 in the waveguide structure is submicron, for example, the thickness of the cladding 300 is 100nm-1μm, and can further be 200nm-1μm, 300nm-1μm, 400nm-1μm, 500nm-1μm, 600nm-1μm, 700nm-1μm, 800nm-1μm, etc.

[0088] In some examples, the buried layer 400 in the waveguide structure may have a thickness of sub-micron level. For example, the buried layer 400 may have a thickness of 100 nm-1 μm.

[0089] According to the dielectric material provided in the embodiment of the present disclosure, it is suitable for directly preparing a film on the waveguide 200 using an evaporation process, such as an electron beam evaporation process, thereby forming a cladding 300 on the waveguide 200. This is conducive to precisely controlling the thickness of the cladding 300 to be at the submicron level, making the waveguide structure suitable for optoelectronic devices, especially miniaturized and high-density optoelectronic devices.

[0090] In some examples, the waveguide structure provided by the embodiments of the present disclosure may further include metal electrodes, which are arranged on both sides of the waveguide.

[0091] In some examples, the waveguide structure provided by the embodiments of the present disclosure may further include a cladding layer, which covers the cladding layer and the metal electrode.

[0092] On the other hand, an embodiment of the present disclosure further provides an optoelectronic device, which includes any of the above-mentioned waveguide structures.

[0093] The "optoelectronic devices" involved in the embodiments of the present disclosure include at least optoelectronic communication devices. The optoelectronic devices have all the advantages of the above-mentioned dielectric materials. Based on the high dielectric properties and low refractive index of the cladding, this can optimize the optoelectronic performance of the optoelectronic devices provided by the embodiments of the present disclosure.

[0094] The waveguide structure has the characteristic of confining light. Based on the high dielectric properties and low refractive index of the cladding, light can be more confined in the waveguide structure. This not only optimizes the optoelectronic performance of the waveguide structure provided by the embodiment of the present disclosure, but also, based on the fact that the dielectric material is silicate, it has good temperature resistance.

[0095] In some examples, the optoelectronic devices provided by embodiments of the present disclosure are electro-optic modulators (EOMs), which are devices that can be used to control the power (intensity modulator), phase (phase modulator), or polarization of light using an electrical control signal.

[0096] In the embodiments of the present disclosure, the types of electro-optical modulators include but are not limited to: MZ interferometer modulator, microring resonant cavity modulator, FP resonant cavity modulator (FP type modulator), photonic crystal modulator (such as Si-based optical modulator), etc.

[0097] An MZ interferometer modulator uses a structure where the input lightwave, after traveling through a certain optical path, is split into two equal beams at a Y-branch. These beams are then transmitted through two waveguides. The waveguides are made of electro-optical crystals, such as lithium niobate (LiNbO3), gallium arsenide (GaAs), or lithium tantalate (LiTaO3). Their refractive index varies with the applied voltage, causing a phase difference between the two beams when they reach the second Y-branch. The MZ structure modulates the refractive index of one or both arms of the waveguide, creating a refractive index difference that results in phase modulation and interference, ultimately modulating the optical signal.

[0098] In an MZ interferometer modulator, a cladding prepared based on the dielectric material provided in the embodiments of the present disclosure is coated on the outside of a waveguide, so that the waveguide obtains a higher proportion of driving voltage and changes the refractive index of the waveguide, thereby reducing the MZ interferometer modulator's demand for driving voltage and achieving low driving voltage and high modulation efficiency.

[0099] For example, FIG3 illustrates a partial cross-sectional view of an MZ interferometer modulator. As shown in FIG3 , the MZ interferometer modulator includes a substrate 100, a buried layer 400 stacked on the substrate 100, a waveguide 200 stacked on the buried layer 400, a cladding 300 covering the waveguide 200, two metal electrodes 500 symmetrically distributed on both sides of the waveguide 200, and a cladding layer 600 covering the cladding 300 and the metal electrodes 500. The cladding layer 600 may be made of silicon dioxide.

[0100] The microring resonant cavity modulator consists of a lossless coupling between a waveguide and a ring resonator. It uses the waveguide loop to form feedback and has different periodic responses to light of different wavelengths, thereby achieving modulation of the optical signal.

[0101] In a microring resonant cavity modulator, a cladding prepared based on the dielectric material provided in the embodiments of the present disclosure is coated on the outside of a waveguide, so that the waveguide obtains a higher proportion of driving voltage and changes the refractive index of the waveguide, thereby reducing the microring resonant cavity modulator's demand for driving voltage and achieving low driving voltage and high modulation efficiency.

[0102] The FP resonant cavity modulator includes two parallel plane mirrors, which use reflection from both end faces to form an FP cavity. The phase delay of the light wave in the FP cavity changes with the change in the refractive index caused by the voltage applied to the waveguide electrode, and the output light intensity also changes accordingly, thereby achieving modulation of the optical signal. The photonic crystal modulator (such as a Si-based optical modulator) includes a photonic crystal, which modulates the optical signal through the electro-optical effect of the photonic crystal. In both the FP resonant cavity modulator and the photonic crystal modulator, the cladding prepared based on the dielectric material provided in the embodiments of the present disclosure is coated on the waveguide.

[0103] In another aspect, embodiments of the present disclosure further provide a method for fabricating a waveguide structure, comprising: providing a substrate having a buried layer; fabricating a waveguide on the buried layer; and depositing any of the aforementioned dielectric materials onto the waveguide via an evaporation process to form a film, thereby forming a cladding layer on the waveguide to obtain the waveguide structure.

[0104] The waveguide structure fabrication method provided by the disclosed embodiments utilizes dielectric materials comprising at least one of calcium silicate, barium silicate, and strontium silicate. These dielectric materials have high and similar melting points, enabling them to be stably deposited into films using evaporation processes such as electron beam evaporation. The cladding layer can then be directly deposited onto the waveguide. The evaporation process's unique characteristics allow for controllable cladding thickness, facilitating the production of cladding of arbitrary thickness, easily controlled to the submicron level, making it suitable for optoelectronic devices.

[0105] The method for preparing a waveguide structure provided by the embodiment of the present disclosure not only has the advantages of a simple preparation process, good repeatability, and ease of large-scale production, but also has strong compatibility with waveguides, can be applied to the preparation of claddings in various optoelectronic devices, and has high versatility.

[0106] In some examples, the evaporation process is an electron beam evaporation process.

[0107] In the disclosed embodiment, the dielectric material includes calcium silicate and may further include at least one of barium silicate and strontium silicate. When the dielectric material includes both calcium silicate and at least one of barium silicate and strontium silicate, the raw materials are mixed uniformly according to a predetermined ratio and set aside.

[0108] In some implementations, the dielectric material is prepared by the following method, including: providing a dielectric raw material; and performing impurity removal and crushing on the dielectric raw material to obtain the dielectric material.

[0109] Calcium silicate raw materials, barium silicate raw materials and strontium silicate raw materials can all use currently sold calcium silicate products, barium silicate products and strontium silicate products. These dielectric raw materials generally contain impurities, which is not conducive to obtaining a low refractive index, and the particle size does not meet the requirements of the electron beam evaporation process.

[0110] By removing impurities and crushing the dielectric raw materials, on the one hand, impurities are removed, resulting in a high-purity dielectric material and improving the photoelectric performance of the cladding. On the other hand, the particle size of the dielectric material is made more suitable for the electron beam evaporation process, resulting in a smooth and dense cladding surface and reducing cladding defects.

[0111] In addition, calcium silicate raw materials, barium silicate raw materials and strontium silicate raw materials all have the advantages of being easily available and low in cost, which is beneficial to reducing the preparation cost of optoelectronic devices, especially the cladding.

[0112] The dielectric raw material may be a 100% by mass calcium silicate raw material, or a combination of a calcium silicate raw material and at least one of a barium silicate raw material and a strontium silicate raw material.

[0113] Impurity removal of dielectric raw materials can be achieved through calcination. By calcining various dielectric raw materials in sequence, the impurities therein are vaporized and removed, thereby achieving the purpose of purifying the raw materials.

[0114] Exemplarily, the dielectric raw material is fired at a temperature of 1200° C. to 1500° C. for 12 to 24 hours. For example, the firing temperature includes, but is not limited to, 1200° C., 1250° C., 1300° C., 1350° C., 1400° C., 1450° C., 1500° C., etc. The firing time includes, but is not limited to, 12 hours, 13 hours, 14 hours, 15 hours, 16 hours, 17 hours, 18 hours, 19 hours, 20 hours, 21 hours, 22 hours, 23 hours, 24 hours, etc.

[0115] In order to facilitate the calcination operation, the dielectric raw material can be pressed into blocks to obtain a block body. In this way, the block body is calcined at a temperature of 1200° C. to 1500° C. for 12 hours to 24 hours to remove impurities.

[0116] The calcined dielectric raw material is crushed to obtain a granular raw material with a particle size within a set range. For example, the particle size of the crushed dielectric material is in the millimeter order.

[0117] For example, after crushing, the particle size of the dielectric material is 0.1 mm-10 mm, including but not limited to 0.1 mm, 0.5 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, 10 mm, etc.

[0118] The above-mentioned crushing process, on the one hand, makes the cladding texture uniform, the surface flat and improves the evaporation efficiency; on the other hand, it is beneficial to improve the bonding force between the cladding and the waveguide, so that the two are in full contact, avoiding problems such as bulging; on the other hand, it is also beneficial to accurately control the thickness of the cladding.

[0119] In some examples, the process corresponding to the crushing treatment may be shear crushing, grinding crushing, impact crushing, etc. For example, a crusher may be used to grind and crush the calcined dielectric raw materials.

[0120] The disclosed embodiment uses an electron beam evaporation process to form a dielectric material film, wherein the electron beam evaporation process uses an electron beam to directly heat the evaporation material (i.e., dielectric material) under vacuum conditions, so that the evaporation material is vaporized and transported to the waveguide, thereby condensing on the waveguide to form a cladding film.

[0121] The equipment corresponding to the electron beam evaporation process is called electron beam evaporation coating equipment, which includes a vacuum unit, an electron gun unit and a control unit. The vacuum unit is used to provide the vacuum environment required for thermal evaporation, the electron gun unit is used to provide the electron beam required for thermal evaporation to heat the dielectric material, and the control unit is used to control the operation process of the vacuum unit and the electron gun unit.

[0122] In some implementations, to improve the bonding effect between the prepared cladding and the waveguide and to make the cladding more uniform, flat, and dense, an electron beam evaporation process may be used, and the electron beam evaporation process must meet at least one of the following evaporation conditions:

[0123] When the electron beam gun preheats the dielectric material, the corresponding current is 60mA-100mA, including but not limited to 60mA, 65mA, 70mA, 75mA, 80mA, 85mA, 90mA, 95mA, 100mA, etc.

[0124] The corresponding current when the electron beam gun pre-melts the dielectric material is 0.10A-0.15A, which includes but is not limited to: 0.10A, 0.11A, 0.12A, 0.13A, 0.14A, 0.15A, etc.

[0125] The corresponding current when the electron beam gun evaporates the dielectric material satisfies the evaporation rate of 0.5A / s-0.8A / s. For example, the current when the electron beam gun evaporates the dielectric material is 0.14A-0.2A, which includes but is not limited to: 0.14A, 0.15A, 0.16A, 0.17A, 0.18A, 0.19A, 0.2A, etc., so that the evaporation rate can be 0.5A / s, 0.55A / s, 0.6A / s, 0.65A / s, 0.7A / s, 0.75A / s, 0.8A / s, etc.

[0126] In some examples, a dielectric material is formed as a cladding layer on the waveguide using an electron beam evaporation process using an electron beam evaporation coating device, including the following steps:

[0127] (1) Opening the vent valve of the electron beam evaporation coating device, waiting for the air pressure in the chamber to return to a first set pressure, such as one standard atmospheric pressure, opening the chamber and placing a crucible, and simultaneously fixing a waveguide structure intermediate on the substrate inside the chamber, wherein the waveguide structure intermediate includes a substrate, a buried layer, and a waveguide stacked in sequence.

[0128] (2) Close the door of the chamber, start the mechanical pump to pump the air pressure in the chamber to a second set pressure, for example, the second set pressure is less than or equal to 5 Pa, then close the bypass valve of the electron beam evaporation coating equipment, open the main valve and molecular pump of the electron beam evaporation coating equipment, and continue to vacuum using the molecular pump.

[0129] (3) Evacuate the chamber until the vacuum level in the chamber is greater than or equal to 10 -4 Pa, the dielectric material is evaporated. -4 The dielectric material is evaporated under a vacuum degree of Pa to ensure that the texture of the formed cladding is highly uniform and higher in purity.

[0130] (4) Turn on the power of the electron gun unit, turn on the high voltage enable switch, wait for the voltage of the electron beam gun to stabilize to the set voltage, for example, the set voltage is 5kV-10kV (5kV, 6kV, 7kV, 8kV, 9kV, 10kV, etc.), turn on the gun beam switch of the electron gun unit to preheat the dielectric material.

[0131] (5) Controlling the electron beam gun to preheat the dielectric material at a current of 60 mA to 100 mA, which includes: controlling the electron beam gun to preheat the dielectric material at a current of 60 mA to 70 mA for 2 minutes to 5 minutes, and then controlling the electron beam gun to preheat the dielectric material at a current of 75 mA to 90 mA to preheat the dielectric material.

[0132] (6) Controlling the electron beam gun to pre-melt the dielectric material corresponds to a current of 0.10A-0.15A, which includes: slowly increasing the electron beam gun current from 0.10A to 0.13A-0.15A, and when a number is observed on the crystal oscillator, indicating that the dielectric material begins to evaporate, the large spot is adjusted at this current, for example, 0.13A, so that the crucible is evenly heated to achieve pre-melting of the dielectric material.

[0133] (7) After a set pre-melting time, for example, 10 to 20 minutes, the dielectric material in the crucible is observed to be in a liquid state, indicating that the pre-melting is complete.

[0134] (8) Continue to increase the electron beam gun current, for example, to 0.14A-0.2A, so that the evaporation rate is 0.5A / s-0.8A / s, thereby performing the evaporation operation, and the dielectric material is then deposited on the waveguide to form a cladding layer. During the evaporation process, the electron beam gun current is adjusted to stabilize the evaporation rate.

[0135] (9) After the cladding layer evaporates to the target thickness, the cladding layer is deposited on the waveguide to obtain the waveguide structure. The electron beam gun current is adjusted to zero, the high voltage enable switch is turned off, and the chamber is allowed to cool, for example, for 15 to 30 minutes. The chamber is then vented and the crucible and waveguide structure are removed.

[0136] The electron beam evaporation process described above allows for the deposition of a cladding layer on the waveguide surface at a controlled rate. This process is also non-destructive and suitable for non-destructive deposition on various waveguide types, offering strong compatibility. The resulting cladding layer boasts precise, adjustable thickness, low roughness, and a smooth, dense, and uniform texture. Furthermore, this film-forming process is simple and efficient, requiring no additional steps such as synthesis, pressing, or calcination.

[0137] In some examples, the material of the buried layer is the dielectric material provided in the embodiments of the present disclosure. Then, the dielectric material can be deposited on the substrate through an evaporation process, thereby forming a buried layer on the surface of the substrate.

[0138] Among them, the evaporation process involved here can be the same as the evaporation process involved in the preparation of the cladding layer mentioned above, and will not be repeated here, so that the buried layer can be obtained by evaporation at a controllable speed, and the buried layer will not damage the substrate during the preparation process, and is suitable for non-destructive preparation of buried layers on various types of substrates.

[0139] The preferred embodiments of the present disclosure will be described in more detail below. Although the preferred embodiments of the present disclosure are described below, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. Where specific techniques or conditions are not specified in the examples, the techniques or conditions described in the literature in this field or in accordance with the product specifications are used. Where the manufacturer of the reagents or instruments used is not specified, they are all conventional products that can be obtained commercially.

[0140] Example 1

[0141] This embodiment 1 provides a dielectric material and a waveguide structure based on the dielectric material. The dielectric material is calcium silicate, and the waveguide structure comprises a silicon substrate, a silicon dioxide buried layer, a lithium niobate waveguide, and a cladding layer stacked in sequence. The cladding layer is a 500 nm thick calcium silicate layer. The stacked silicon substrate, silicon dioxide buried layer, and lithium niobate waveguide are referred to as a waveguide structure intermediate.

[0142] The waveguide structure is prepared by the following method:

[0143] A waveguide structure intermediate and a dielectric material are provided. The dielectric material is obtained by the following method: using commercially available calcium silicate powder as a dielectric raw material, pressing the calcium silicate powder into a block by a film pressing method to obtain a block blank, and then roasting the block blank at a temperature of 1250°C for 20 hours to remove impurities to obtain a block blank. The block blank is crushed to form particles with a particle size of 0.1mm-5mm, which serve as the dielectric material (i.e., the evaporation raw material). Using an electron beam evaporation process and electron beam evaporation coating equipment, the evaporated raw material is formed into a cladding on the waveguide of the waveguide structure intermediate.

[0144] The steps of the electron beam evaporation operation in Example 1 are as follows:

[0145] (1) Open the vent valve of the electron beam evaporation coating equipment, wait for the air pressure in the chamber to return to a standard atmospheric pressure, open the chamber and place the crucible, and at the same time fix the waveguide structure intermediate on the substrate inside the chamber.

[0146] (2) Close the door of the chamber, start the mechanical pump to pump the air pressure in the chamber to 5 Pa, then close the bypass valve of the electron beam evaporation coating equipment, and open the main valve and molecular pump of the electron beam evaporation coating equipment.

[0147] (3) Evacuate the chamber until the vacuum degree in the chamber is 10 -4 Pa, start evaporation.

[0148] (4) Turn on the power of the electron gun unit, turn on the high voltage enable switch, wait until the voltage of the electron beam gun stabilizes to 8kV, and turn on the gun beam switch of the electron gun unit to preheat the dielectric material.

[0149] (5) The electron beam gun is controlled to have a current of 60 mA for 2 minutes to preheat the electron beam gun. Then, the electron beam gun is controlled to have a current of 85 mA to preheat the dielectric material.

[0150] (6) Slowly increase the electron beam gun current from 0.10A to 0.13A. At this time, a number is observed on the crystal oscillator, indicating that the dielectric material begins to evaporate. At a current of 0.13A, the spot size is enlarged so that the crucible is evenly heated to achieve pre-melting of the dielectric material.

[0151] (7) After 15 minutes of pre-melting, the dielectric material in the crucible was observed to be in a liquid state, indicating that the pre-melting was complete.

[0152] (8) The electron beam gun current is further increased to 0.16 A / s, resulting in an evaporation rate of 0.6 A / s. The evaporation operation is then performed, and the dielectric material is deposited on the waveguide to form a cladding layer. During the evaporation process, the electron beam gun current is adjusted to stabilize the evaporation rate at 0.6 A / s.

[0153] (9) After the cladding layer evaporates to 500 nm, the cladding layer is deposited on the lithium niobate waveguide to obtain the waveguide structure. The electron beam gun current is adjusted to zero, the high voltage enable switch is turned off, and the chamber is allowed to cool, for example, for 20 minutes. The chamber is then vented and the waveguide structure and crucible are removed.

[0154] The cladding on the waveguide structure was subjected to an X-ray diffraction (XRD) test. The test results are shown in FIG4 . As shown in FIG4 , the characteristic peak position of the cladding (calcium silicate film layer) does not have obvious diffraction peak intensity, indicating that the cladding is amorphous, enabling it to be successfully prepared based on the electron beam evaporation process.

[0155] The light transmittance of the cladding on the waveguide structure was tested. The test results are shown in Figure 5, which shows the transmittance curves of the cladding in the visible light and near-infrared bands. It can be seen that the calcium silicate cladding has a high light transmittance in the operating band of optical communication (1310nm-1550nm), among which the light transmittance at a wavelength of 1310nm (shown by the left dotted line) is 98.57%, and the light transmittance at a wavelength of 1550nm (shown by the right dotted line) is 98.57%. It can be seen that the cladding prepared in Example 1 has no absorption loss for light in the communication band.

[0156] The high-frequency dielectric constant and refractive index of the cladding on the waveguide structure were tested. Its high-frequency dielectric constant in a high-frequency electric field (50GHz) was 6.3. The refractive index test results are shown in Figure 6. The horizontal axis of Figure 6 is wavelength, where the two dotted lines correspond to wavelengths of 1310nm and 1550nm respectively. The vertical axis on the left side of Figure 6 is the refractive index n, and the vertical axis on the right side of Figure 6 is the light absorption coefficient k. As can be seen from Figure 6, the refractive index of the cladding of Example 1 in the communication band is between 1.474-1.481, and the absorption of light is almost zero. It can be seen that the waveguide structure provided by Example 1 can be used in electro-optical modulation devices and is beneficial to the optoelectronic performance of electro-optical modulation devices.

[0157] The surface morphology of the cladding layer on the waveguide structure was tested. The test results are shown in Figure 7, which shows a SEM image of the cladding layer. The scale of the SEM image is 1 μm. As shown in Figure 7, the cladding layer has a very smooth surface, without any defects such as protrusions or depressions. This makes the cladding layer suitable for subsequent micro-nanofabrication processes (for example, etching to create vacancies for metal electrodes) or further thin film deposition (for example, deposition of a coating layer thereon).

[0158] Example 2

[0159] This embodiment 2 provides a dielectric material and a waveguide structure based on the dielectric material. The dielectric material comprises 70% by mass of calcium silicate and 30% by mass of barium silicate. The structure of the waveguide structure is identical to that of the waveguide structure of embodiment 1, except that the cladding in embodiment 2 is prepared based on the dielectric material of embodiment 2.

[0160] The preparation process of the waveguide structure can refer to Example 1, except that the current corresponding to the preheating of the dielectric material by the electron beam gun is 90 mA.

[0161] The corresponding current when the electron beam gun pre-melts the dielectric material is 0.15A, and the current when the electron beam gun evaporates the dielectric material is 0.19A, so that the evaporation rate can be 0.7A / s.

[0162] Testing showed that the cladding provided in Example 2 had a smooth surface, free of protrusions or depressions. Furthermore, the cladding provided in Example 2 had a refractive index of 1.61, making its light absorption in the communication band virtually zero. The cladding provided in Example 2 also had a high-frequency dielectric constant of 6.9 at 50 GHz. This indicates that the waveguide structure provided in Example 2 can be used in electro-optical modulation devices and can improve their optoelectronic performance.

[0163] Example 3

[0164] This embodiment 3 provides a dielectric material and a waveguide structure based on the dielectric material. The dielectric material comprises 25% by mass of calcium silicate, 40% by mass of barium silicate, and 35% by mass of strontium silicate. The structure of the waveguide structure is identical to that of the waveguide structure of embodiment 1, except that the cladding in embodiment 3 is prepared based on the dielectric material of embodiment 3.

[0165] The preparation process of the waveguide structure can be referred to Example 1, except that the current corresponding to the electron beam gun preheating the dielectric material is 95 mA, the current corresponding to the electron beam gun premelting the dielectric material is 0.15 A, and the current corresponding to the electron beam gun evaporating the dielectric material is 0.2 A, so that the evaporation rate can be 0.8 A / s.

[0166] Testing showed that the surface of the cladding provided in Example 3 was smooth, without any defects such as protrusions or depressions. Furthermore, the cladding provided in Example 3 had a refractive index of 1.82, making its light absorption in the communication band almost zero. The cladding provided in Example 3 also had a high-frequency dielectric constant of 7.4 at 50 GHz. This indicates that the waveguide structure provided in Example 3 can be used in electro-optical modulation devices and improves their optoelectronic performance.

[0167] Example 4

[0168] This embodiment 4 provides a dielectric material and a waveguide structure based on the dielectric material. The dielectric material comprises 90% by mass of calcium silicate, 5% by mass of barium silicate, and 5% by mass of strontium silicate. The structure of the waveguide structure is identical to that of the waveguide structure of embodiment 1, except that the cladding in embodiment 4 is prepared based on the dielectric material of embodiment 4.

[0169] The preparation process of the waveguide structure can be referred to Example 1, except that the current corresponding to the electron beam gun preheating the dielectric material is 80 mA, the current corresponding to the electron beam gun premelting the dielectric material is 0.13 A, and the current corresponding to the electron beam gun evaporating the dielectric material is 0.16 A, so that the evaporation rate can be 0.6 A / s.

[0170] Testing showed that the cladding provided in Example 4 had a smooth surface, free of protrusions or depressions. Furthermore, the cladding provided in Example 4 had a refractive index of 1.50, making its absorption of light in the communication band virtually zero. The cladding provided in Example 4 had a high-frequency dielectric constant of 6.4 at 50 GHz. This indicates that the waveguide structure provided in Example 4 can be used in electro-optical modulation devices and improves their optoelectronic performance.

[0171] The above description is only for the purpose of facilitating those skilled in the art to understand the technical solutions of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the scope of protection of the present disclosure.

Claims

1. A dielectric material, wherein: The dielectric material is used for a photoelectric device, and the dielectric material comprises calcium silicate.

2. The dielectric material according to claim 1, wherein The mass percentage of the calcium silicate in the dielectric material is 100%.

3. The dielectric material according to claim 1, wherein The dielectric material further comprises a doping material, wherein the doping material is selected from at least one of barium silicate and strontium silicate; The mass percentage of the calcium silicate in the dielectric material is 20%-90%; The mass percentage of the doping material in the dielectric material is 10%-80%.

4. The dielectric material according to any one of claims 1 to 3, wherein: The high-frequency dielectric constant of the dielectric material is 8-20, and the refractive index is 1.47-1.

91.

5. A waveguide structure, wherein: The waveguide structure comprises a substrate, a waveguide and a cladding buried layer, wherein the cladding is coated on the waveguide, and the whole formed by the waveguide and the cladding, the buried layer and the substrate are sequentially stacked; Wherein, the cladding is prepared by using the dielectric material described in any one of claims 1-4.

6. The waveguide structure according to claim 5, wherein: The thickness of the cladding layer is sub-micron level.

7. The waveguide structure according to claim 5, wherein: The buried layer is prepared by using the dielectric material according to any one of claims 1 to 4.

8. An optoelectronic device, wherein: The optoelectronic device comprises the waveguide structure according to any one of claims 5-7.

9. The optoelectronic device according to claim 8, wherein: The optoelectronic device is an electro-optic modulator.

10. A method for preparing a waveguide structure, wherein: The method for preparing the waveguide structure comprises: providing a substrate having a buried layer; preparing a waveguide on the buried layer; The dielectric material according to any one of claims 1 to 4 is used to deposit a film on a waveguide through an evaporation process, thereby forming a cladding on the waveguide to obtain the waveguide structure.

11. The method for preparing a waveguide structure according to claim 10, wherein: The dielectric material is obtained by the following method: Provide dielectric raw materials; The dielectric raw material is subjected to impurity removal and crushing treatment to obtain the dielectric material.

12. The method for preparing a waveguide structure according to claim 10, wherein: The evaporation process is an electron beam evaporation process, and the electron beam evaporation process satisfies at least one of the following evaporation conditions: The preheating current of the electron beam gun on the dielectric material is 60mA-90mA; The pre-melting current of the electron beam gun on the dielectric material is 0.10A-0.15A; The evaporation current of the electron beam gun on the dielectric material satisfies the evaporation rate of 0.5A / s-0.8A / s.

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