Semiconductor detection device and semiconductor detection method

Abstract

A semiconductor detection device and method for detecting a semiconductor workpiece. The device comprises: a carrier plate (110) for receiving the semiconductor workpiece; a plate rotating unit (130) for rotating the carrier plate (110) by a plurality of rotation angles along a rotation axis; a radiation light source (160) for emitting radiation light having an optical axis parallel to the rotation axis; a radiation detector (140) for detecting the radiation light to receive a plurality of radiation images of a detected area of the semiconductor workpiece; and an image adjustment unit for performing weight combination on the plurality of radiation images to determine a plurality of pixel values, so as to reconstruct a sample image of the detected area. The radiation light source (160) and the radiation detector (140) are arranged on different sides of the carrier plate (110), and when the carrier plate (110) rotates to a specific rotation angle, the radiation detector (140) receives a specific radiation image among the plurality of radiation images.

Description

Semiconductor detection device and semiconductor detection method Technical Field

[0001] The present invention relates to the field of semiconductor workpiece detection, and more particularly, to a semiconductor detection device and a semiconductor detection method. Background Art

[0002] The development of various chips, including three-dimensional (3D) chips, is rapidly advancing. 3D chips include multiple through-silicon vias (TSVs) or through-glass vias (TGVs) to connect the chip's multiple layers, particularly in chip-on-wafer-on-substrate (CoWoS) processes. However, during chip manufacturing, TSVs and TGVs are prone to cracks and defects. Because these defects can severely affect TSV and TGV characteristics, detecting these defects and removing defective components is crucial.

[0003] Summary of the Invention

[0004] The present invention is made in view of the above problems and provides a semiconductor detection device for detecting a semiconductor workpiece and a semiconductor detection method for detecting a semiconductor workpiece using a semiconductor detection device.

[0005] To address the aforementioned issues, a semiconductor inspection method includes: receiving the semiconductor workpiece on a carrier plate, wherein the carrier plate is rotatable along a rotation axis at multiple rotation angles; emitting radiation light toward the semiconductor workpiece via a radiation light source of the semiconductor inspection device, wherein an optical axis of the radiation light is parallel to the rotation axis; detecting the radiation light via a radiation detector of the semiconductor inspection device to receive multiple radiation images of an inspected region of the semiconductor workpiece, wherein the radiation light source and the radiation detector are disposed on opposite sides of the carrier plate, and a specific radiation image from the multiple radiation images is received when the carrier plate is rotated to a specific rotation angle among the multiple rotation angles; and reconstructing a sample image of the inspected region by determining multiple pixel values ​​through weighted combination of the multiple radiation images.

[0006] In some embodiments, the semiconductor inspection device includes: a carrier plate configured to receive the semiconductor workpiece; a plate rotation unit coupled to the carrier plate and configured to rotate the carrier plate along a rotation axis at a plurality of rotation angles; a radiation light source configured to emit radiation light, wherein an optical axis of the radiation light is parallel to the rotation axis; a radiation detector configured to detect the radiation light to receive a plurality of radiation images of an inspected area of ​​the semiconductor workpiece, wherein the radiation light source and the radiation detector are respectively disposed on opposite sides of the carrier plate, and when the plate rotation unit rotates the carrier plate to a particular rotation angle among the plurality of rotation angles, the radiation detector receives a particular radiation image among the plurality of radiation images; and an image adjustment unit coupled to the radiation detector and configured to determine a plurality of pixel values ​​by weighted combination of the plurality of radiation images to reconstruct a sample image of the inspected area.

[0007] In some embodiments, when the carrier plate is rotated at the multiple rotation angles (for example, the plate rotation unit rotates the carrier plate at the multiple rotation angles), a detection point in the detected area of ​​the semiconductor workpiece is correspondingly moved to a plurality of target positions; when the detection point is located at the multiple target positions, the detection point is detected to generate a plurality of point values, each of the plurality of point values ​​being included in one of the multiple radiation images; by weightedly combining the plurality of point values ​​with a plurality of detection distances, a specific pixel value among the plurality of pixel values ​​in the sample image of the detected area is generated for the detection point; and each of the plurality of detection distances is determined based on a corresponding one of the multiple target positions.

[0008] In some embodiments, the radiation light source is set at a light source position; the multiple detection distances are each the length of a corresponding one of a plurality of straight line segments; and the multiple straight line segments are respectively linked from the light source position through the corresponding one of the plurality of target positions to the radiation detector.

[0009] In some embodiments, the radiation light source is capable of moving along a first moving direction, wherein the first moving direction is parallel to the rotation axis; and the radiation detector is capable of moving along a second moving direction and / or a third moving direction, wherein the second moving direction is parallel to the rotation axis and the third moving direction is perpendicular to the rotation axis.

[0010] In some embodiments, the semiconductor detection device further includes: a light source movement unit coupled to the radiation light source and configured to move the radiation light source along a first movement direction, wherein the first movement direction is parallel to the rotation axis; and a detection movement unit coupled to the radiation detector and configured to move the radiation detector along a second movement direction and / or a third movement direction, wherein the second movement direction is parallel to the rotation axis, and the third movement direction is perpendicular to the rotation axis.

[0011] In some embodiments, a magnification of the plurality of radiation images is determined based on a first perpendicular distance between the semiconductor workpiece and a radiation plane of the radiation light source and a second perpendicular distance between a detection plane of the radiation detector and the radiation plane of the radiation light source.

[0012] In some embodiments, a light source distance between the semiconductor workpiece and a radiation plane of the radiation light source along the first movement direction is determined by the light source movement unit; a detection distance between a detection plane of the radiation detector and the radiation plane of the radiation light source along the first movement direction is determined by the light source movement unit and the detection movement unit; and a magnification of the multiple radiation images is determined based on the light source distance and the detection distance along the first movement direction.

[0013] In some embodiments, the semiconductor workpiece includes a plurality of through-hole components; the plurality of through-hole components in the detected area of ​​the semiconductor workpiece are detected to generate a plurality of component images in the plurality of radiation images; when the number of the plurality of component images in the particular radiation image is greater than or equal to a number threshold, the particular radiation image is set to be added to the plurality of available images; and the plurality of available images are used to determine whether a through-hole defect exists in the plurality of through-hole components in the detected area.

[0014] In some embodiments, when the specific radiation image is set to belong to the multiple available images, a corresponding radiation image corresponding to the specific radiation image in the multiple radiation images is added to the multiple available images; the corresponding radiation image is received when the carrier plate is rotated (for example: rotated by the plate rotation unit) to a corresponding rotation angle among the multiple rotation angles; and the specific rotation angle and the corresponding rotation angle are respectively located in different plane quadrants.

[0015] In some embodiments, an angular difference between the specific rotation angle and the corresponding rotation angle is a multiple of N degrees; and the value of N degrees is 90 or 180.

[0016] In some embodiments, to ensure that at least one radiation image in the plurality of radiation images is set to belong to the plurality of available images, the number of the plurality of radiation images is greater than or equal to a minimum number.

[0017] In some embodiments, when each angular difference between two adjacent rotation angles in the plurality of rotation angles is substantially the same, the minimum number is 30.

[0018] In some embodiments, the semiconductor workpiece further comprises a substrate; the plurality of via elements are located on the substrate; and the plurality of available images are used to determine whether substrate defects are present in the substrate.

[0019] To address the aforementioned issues, a semiconductor inspection method includes: receiving the semiconductor workpiece on a carrier plate; emitting radiation light toward the semiconductor workpiece via a radiation light source of the semiconductor inspection device, wherein the radiation light source is rotatable along a rotation axis at a plurality of first rotation angles; and an optical axis of the radiation light is parallel to the rotation axis; detecting the radiation light via a radiation detector of the semiconductor inspection device to receive a plurality of radiation images of an inspected region of the semiconductor workpiece, wherein the radiation light source and the radiation detector are disposed on opposite sides of the carrier plate, and a specific radiation image from the plurality of radiation images is received when the radiation light source is rotated to a specific first rotation angle among the plurality of first rotation angles; and reconstructing a sample image of the inspected region by determining a plurality of pixel values ​​through weighted combination of the plurality of radiation images.

[0020] In some embodiments, the semiconductor inspection device includes: a carrier plate configured to receive the semiconductor workpiece; a radiation light source configured to emit radiation light, wherein an optical axis of the radiation light is parallel to the rotation axis; a light source rotation unit coupled to the radiation light source and configured to rotate the radiation light source along the rotation axis at a plurality of first rotation angles; a radiation detector configured to detect the radiation light to receive a plurality of radiation images of an inspected area of ​​the semiconductor workpiece, wherein the radiation light source and the radiation detector are respectively disposed on opposite sides of the carrier plate, and when the light source rotation unit rotates the radiation light source to a specific first rotation angle among the plurality of first rotation angles, the radiation detector receives a specific radiation image among the plurality of radiation images; and an image adjustment unit coupled to the radiation detector and configured to determine a plurality of pixel values ​​by weighted combination of the plurality of radiation images to reconstruct a sample image of the inspected area.

[0021] In some embodiments, when the radiation light source is rotated at the plurality of first rotation angles (for example, the light source rotation unit rotates the carrier plate at the plurality of rotation angles), the radiation light source is correspondingly moved to a plurality of light source positions; when the radiation light source is respectively located at the plurality of light source positions, a detection point in the detected area of ​​the semiconductor workpiece is detected to generate a plurality of point values, each of the plurality of point values ​​being included in one of the plurality of radiation images; by weightedly combining the plurality of point values ​​with a plurality of detection distances, a specific pixel value among the plurality of pixel values ​​in the sample image of the detected area is generated for the detection point; and each of the plurality of detection distances is determined based on a corresponding one of the plurality of light source positions.

[0022] In some embodiments, the detection point is located at a target location; the multiple detection distances are each the length of a corresponding one of a plurality of straight line segments; and the multiple straight line segments are respectively linked from the corresponding one of the plurality of light source positions through the target location to the radiation detector.

[0023] In some embodiments, the radiation light source is capable of moving along a first moving direction, wherein the first moving direction is parallel to the rotation axis; and the radiation detector is capable of moving along a second moving direction and / or a third moving direction, wherein the second moving direction is parallel to the rotation axis and the third moving direction is perpendicular to the rotation axis.

[0024] In some embodiments, the semiconductor detection device further includes: a light source movement unit coupled to the radiation light source and configured to move the radiation light source along a first movement direction, wherein the first movement direction is parallel to the rotation axis; and a detection movement unit coupled to the radiation detector and configured to move the radiation detector along a second movement direction and / or a third movement direction, wherein the second movement direction is parallel to the rotation axis, and the third movement direction is perpendicular to the rotation axis.

[0025] In some embodiments, a magnification of the plurality of radiation images is determined based on a first perpendicular distance between the semiconductor workpiece and a radiation plane of the radiation light source and a second perpendicular distance between a detection plane of the radiation detector and the radiation plane of the radiation light source.

[0026] In some embodiments, a light source distance between the semiconductor workpiece and a radiation plane of the radiation light source along the first movement direction is determined by the light source movement unit; a detection distance between a detection plane of the radiation detector and the radiation plane of the radiation light source along the first movement direction is determined by the light source movement unit and the detection movement unit; and a magnification of the multiple radiation images is determined based on the light source distance and the detection distance along the first movement direction.

[0027] In some embodiments, the semiconductor workpiece includes a plurality of through-hole components; the plurality of through-hole components in the detected area of ​​the semiconductor workpiece are detected to generate a plurality of component images in the plurality of radiation images; when the number of the plurality of component images in the particular radiation image is greater than or equal to a number threshold, the particular radiation image is set to be added to the plurality of available images; and the plurality of available images are used to determine whether a through-hole defect exists in the plurality of through-hole components in the detected area.

[0028] In some embodiments, when the specific radiation image is set to belong to the multiple available images, a corresponding radiation image in the multiple radiation images corresponding to the specific radiation image is added to the multiple available images; the corresponding radiation image is received when the radiation light source is rotated (for example, rotated by the light source rotation unit) to a corresponding first rotation angle among the multiple first rotation angles; and the specific first rotation angle and the corresponding first rotation angle are respectively located in different plane quadrants.

[0029] In some embodiments, an angular difference between the specific first rotation angle and the corresponding first rotation angle is a multiple of N degrees; and the value of N degrees is 90 or 180.

[0030] In some embodiments, to ensure that at least one radiation image in the plurality of radiation images is set to belong to the plurality of available images, the number of the plurality of radiation images is greater than or equal to a minimum number.

[0031] In some embodiments, when each angular difference between two adjacent first rotation angles in the plurality of first rotation angles is substantially the same, the minimum number is 30.

[0032] In some embodiments, the semiconductor workpiece further comprises a substrate; the plurality of via elements are located on the substrate; and the plurality of available images are used to determine whether substrate defects are present in the substrate.

[0033] In some embodiments, the radiation detector is capable of rotating along the rotation axis at multiple second rotation angles; each of the multiple second rotation angles corresponds one-to-one to one of the multiple first rotation angles; and when the light source rotation unit rotates the radiation light source to a specific first rotation angle among the multiple first rotation angles, the detection rotation unit correspondingly rotates the radiation detector to a specific second rotation angle among the multiple second rotation angles.

[0034] In some embodiments, the semiconductor detection device further includes: a detection rotation unit coupled to the radiation detector and configured to rotate the radiation detector along the rotation axis at a plurality of second rotation angles, wherein: each of the plurality of second rotation angles corresponds one-to-one to one of the plurality of first rotation angles, and when the light source rotation unit rotates the radiation light source to the particular first rotation angle among the plurality of first rotation angles, the detection rotation unit correspondingly rotates the radiation detector to a particular second rotation angle among the plurality of second rotation angles. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The various aspects of the present invention can be best understood from the following detailed disclosure and the corresponding figures. Various features are not drawn to scale. The dimensions of various features may be arbitrarily increased or decreased for clarity of discussion.

[0036] FIG1 shows a block diagram of a semiconductor detection device according to one or more techniques of the present disclosure.

[0037] 2A and 2B respectively show a front view and a three-dimensional structural diagram of the semiconductor detection unit illustrated in FIG. 1 according to one or more techniques of the present disclosure.

[0038] FIG3 shows a flow chart of a semiconductor inspection method for inspecting a semiconductor workpiece using a semiconductor inspection device according to one or more techniques of the present disclosure.

[0039] 4A and 4B respectively show two schematic diagrams of a semiconductor workpiece and the carrier plate, radiation detector, and radiation source illustrated in FIG. 2A , according to one or more techniques of the present disclosure.

[0040] 5A and 5B are two schematic diagrams respectively showing the radiation detector, semiconductor workpiece, and radiation source illustrated in FIG. 4A , according to one or more techniques of the present disclosure.

[0041] 5C and 5D respectively show two schematic diagrams of the radiation detector, semiconductor workpiece, and radiation source illustrated in FIG. 4A , according to one or more techniques of the present disclosure.

[0042] FIG6 shows a flow chart of a semiconductor inspection method for inspecting a semiconductor workpiece using a semiconductor inspection device according to one or more techniques of the present disclosure.

[0043] FIG. 7 shows a schematic diagram of the semiconductor workpiece illustrated in FIG. 4A , according to one or more techniques of the present disclosure.

[0044] 8A and 8B show two detected images detected at different rotation angles according to one or more techniques of the present disclosure.

[0045] 9A-9C show three scout images showing different defects, according to one or more techniques of this disclosure.

[0046] 10A-10C show three 3D images showing different defects, according to one or more techniques of this disclosure. DETAILED DESCRIPTION

[0047] The following disclosure contains specific information related to exemplary embodiments of the present disclosure. The drawings and the accompanying detailed disclosure in this disclosure are directed only to exemplary embodiments. However, the present disclosure is not limited to these exemplary embodiments. Other variations and embodiments of the present disclosure will occur to those skilled in the art. Unless otherwise indicated, identical or corresponding components in the drawings may be represented by identical or corresponding reference numerals. In addition, the drawings and illustrations in this disclosure are generally not drawn to scale and do not necessarily correspond to actual relative dimensions.

[0048] For the purpose of consistency and ease of understanding, similar features are identified by numbers in the exemplary figures (although not shown in some examples). However, features in different embodiments may differ in other aspects and should not be narrowly limited to those shown in the figures.

[0049] This disclosure uses phrases such as "in one embodiment," "in some embodiments," and the like, which may each refer to one or more of the same or different embodiments. The term "coupled" is defined as directly connected or indirectly connected through intermediate components, and is not necessarily limited to physical connections. The term "comprising" means "including but not necessarily limited to," and specifically indicates open inclusion or membership in the above combinations, groups, series, and equivalents.

[0050] In addition, for purposes of explanation and non-limiting, specific details such as functional entities, technologies, protocols, standards, etc. are set forth to provide an understanding of the described technology. In other instances, detailed disclosure of well-known methods, technologies, systems, architectures, etc. is omitted to avoid obscuring the disclosure with unnecessary detail.

[0051] 1 is a block diagram of a semiconductor detection device 1 according to one or more techniques of the present disclosure. The semiconductor detection device 1 includes a computing unit 10 and a semiconductor detection unit 100 .

[0052] The computing unit 10 can be an electronic device that may include any device configured to control the semiconductor inspection unit 100, receive multiple inspection images, and adjust the multiple inspection images. The semiconductor inspection unit 100 can be an inspection device for inspecting a semiconductor workpiece, generating multiple inspection images, and transmitting the multiple inspection images to the computing unit 10. The computing unit 10 can communicate with the semiconductor inspection unit 100 via a communication medium, either wired or wirelessly.

[0053] Computing unit 10 may be a mobile phone, tablet computer, desktop computer, laptop computer, server, network computing system, or other electronic device. Computing unit 10 may include more or fewer components than shown, or have a different configuration of the various shown components.

[0054] The computing unit 10 may be implemented as any of a variety of suitable processing circuits, such as one or more microprocessors, central processing units (CPUs), graphics processing units (GPUs), system-on-a-chip (SoCs), digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), discrete logic, software, hardware, firmware, or any combination thereof. When implemented partially in software, the device may store a program having computer-executable instructions of the software in a suitable non-transitory computer-readable medium and execute the computer-executable instructions in hardware using one or more processors to perform the disclosed methods.

[0055] The computing unit 10 and the semiconductor detection unit 100 may utilize custom protocols or comply with existing standards or de facto standards, including, but not limited to, Ethernet, IEEE 802.11 or IEEE 802.15 series, Wireless USB, or telecommunication standards, including, but not limited to, Global System for Mobile Communications (GSM), Code-Division Multiple Access 2000 (CDMA2000), Time Division Synchronous Code Division Multiple Access (TD-SCDMA), Worldwide Interoperability for Microwave Access (WiMAX), Third Generation Partnership Project Long-Term Evolution (3GPP-LTE), or Time-Division LTE (TD-LTE). The computing unit 10 and the semiconductor detection unit 100 may each include a device configured to transmit and / or store the plurality of detection images via a communication medium and to receive the plurality of detection images via a communication medium.

[0056] The computing unit 10 may include a computer system interface that enables the plurality of detected images to be stored on or received from a storage device. For example, the computing unit 10 may include a chipset that supports the Peripheral Component Interconnect (PCI) and Peripheral Component Interconnect Express (PCIe) bus protocols, proprietary bus protocols, Universal Serial Bus (USB) protocols, Inter-Integrated Circuit (I2C) protocols, or any other logical and physical structure that can be used to interconnect peer devices.

[0057] Figures 2A and 2B respectively illustrate a front view and a perspective structural diagram of the semiconductor detection unit 100 illustrated in Figure 1 , according to one or more techniques of the present disclosure. The semiconductor detection unit 100 may include a carrier plate 110, a plate moving unit 120, a plate rotating unit 130, a radiation detector 140, a detection moving unit 150, a radiation light source 160, a light source moving unit 170, and a device frame 180.

[0058] The carrier plate 110 can be used to receive a semiconductor workpiece (not shown). The plate moving unit 120 can be coupled to the carrier plate 110 and used to move the carrier plate 110 on a movement plane that is perpendicular to a normal direction of the movement plane. The plate rotating unit 130 can be coupled to the carrier plate 110 and used to rotate the carrier plate 110 along a rotation axis at multiple rotation angles, so that the carrier plate 110 can be rotated along the rotation axis to the multiple rotation angles. In some embodiments, the normal direction can be parallel to the rotation axis, so that the rotation axis can be perpendicular to the movement plane.

[0059] The radiation light source 160 can be used to emit radiation light for detecting semiconductor workpieces. The radiation light can be ultraviolet rays, X-rays, or gamma rays. The radiation light can be a conical beam having an optical axis parallel to the rotation axis. The light source movement unit 170 can be coupled to the radiation light source 160 and used to move the radiation light source 160 along a first movement direction parallel to the rotation axis. The radiation detector 140 can be used to detect the radiation light to receive multiple radiation images of an inspected area of ​​the semiconductor workpiece. The detection movement unit 150 can be coupled to the radiation detector 140 and used to move the radiation detector 140 along a second movement direction parallel to the rotation axis and a third movement direction perpendicular to the rotation axis.

[0060] The tablet moving unit 120, the tablet rotating unit 130, the detection moving unit 150, and the light source moving unit 170 may be disposed on the device frame 180. In some embodiments, the carrier tablet 110 may be disposed on the tablet moving unit 120, and the carrier tablet 110 and the tablet moving unit 120 may be disposed on the tablet rotating unit 130. In some embodiments, the carrier tablet 110 may be disposed on the tablet rotating unit 130, and the carrier tablet 110 and the tablet rotating unit 130 may be disposed on the tablet moving unit 120. In addition, the radiation light source 160 may be disposed on the light source moving unit 170, and the radiation detector 140 may be disposed on the detection moving unit 150.

[0061] In some embodiments, the rotation axis can be parallel to the Z axis. Thus, the optical axis, the first movement direction, the second movement direction, and the normal direction can be parallel to the Z axis. Additionally, the movement plane perpendicular to the normal direction can be parallel to the XY plane. In some embodiments, the third movement direction can be parallel to the Y axis, which is perpendicular to the Z axis.

[0062] In some embodiments, a supporting surface of the carrier plate 110 may be a receiving surface for receiving the semiconductor workpiece. The detection surface of the radiation detector 140 may include a plurality of radiation sensors for receiving radiation light. The radiation surface of the radiation source 160 may include at least one radiation emitter for emitting radiation light. In some embodiments, the supporting surface of the carrier plate 110, the detection surface of the radiation detector 140, and the radiation surface of the radiation source 160 may be parallel to each other. In some embodiments, the supporting surface of the carrier plate 110, the detection surface of the radiation detector 140, and the radiation surface of the radiation source 160 may be parallel to the moving plane. In some embodiments, when the moving plane is parallel to the XY plane, the supporting surface of the carrier plate 110, the detection surface of the radiation detector 140, and the radiation surface of the radiation source 160 may be parallel to the XY plane.

[0063] The radiation detector 140 and the radiation light source 160 may be disposed on two opposite sides of the carrier plate 110. In some embodiments, the radiation detector 140 may be disposed above the carrier plate 110, and the radiation light source 160 may be disposed below the carrier plate 110. In some implementations, the radiation detector 140 may be disposed below the carrier plate 110, and the radiation light source 160 may be disposed above the carrier plate 110.

[0064] The plate moving unit 120 can move the carrier plate 110 along the movement plane perpendicular to the first movement direction, while the plate rotating unit 130 can rotate the carrier plate 110 along the rotation axis perpendicular to the first movement direction at the plurality of rotation angles. Therefore, the plate moving unit 120 and the plate rotating unit 130 do not move the carrier plate 110 along the first movement direction. The light source moving unit 170 can move the radiation light source 160 along the first movement direction, thereby determining a light source distance along the first movement direction between the semiconductor workpiece and the radiation plane of the radiation light source 160. The light source distance can be a source-to-object distance (SOD). Furthermore, the detection movement unit 150 can move the radiation detector 140 along the second movement direction parallel to the first movement direction, and the light source movement unit 170 can move the radiation light source 160 along the first movement direction. Therefore, a detection distance along the first movement direction between the detection plane of the radiation detector 140 and the radiation plane of the radiation light source 160 can be determined by the detection movement unit 150 and the light source movement unit 170. The detection distance can be a source-to-detector distance (SDD).

[0065] The magnification (e.g., magnification) of the multiple radiation images can be determined based on the light source distance along the first movement direction and the detection distance along the first movement direction. When the first movement direction is parallel to the Z-axis, the light source distance along the first movement direction can be the perpendicular component of the SOD (SODz), and the detection distance along the first movement direction can be the perpendicular component of the SDD (SDDz). Therefore, the magnification of the multiple radiation images can be equal to the quotient (SDDz / SODz) obtained by dividing SDDz by SODz.

[0066] Referring to Figures 1 and 2 , the calculation unit 10 can be an image adjustment unit coupled to the radiation detector 140 and configured to determine multiple pixel values ​​by weighted combination of the multiple radiation images to reconstruct a sample image of the detected area. Furthermore, the calculation unit 10 can also be a control unit coupled to at least one of the plate movement unit 120, the plate rotation unit 130, the radiation detector 140, the detection movement unit 150, the radiation light source 160, or the light source movement unit 170. In some embodiments, the control unit can control at least one of the plate movement unit 120 or the plate rotation unit 130 to move and rotate the carrier plate 110. In some embodiments, the control unit can control the radiation detector 140 to detect or stop detecting the radiation light and control the detection movement unit 150 to move the radiation detector 140. In some embodiments, the control unit can control the radiation light source 160 to emit or stop emitting the radiation light and control the light source movement unit 170 to move the radiation light source 160.

[0067] In some embodiments, the semiconductor inspection unit 100 can rotate the semiconductor workpiece placed on the carrier plate 110 by rotating the plate rotation unit 130 to obtain multiple radiation images incident on the semiconductor workpiece from different angles. However, in other embodiments, the rotating component can be replaced by the radiation light source 160 and the radiation detector 140 instead of the carrier plate 110. In other words, although the carrier plate 110 of the semiconductor inspection unit 100 does not rotate, the semiconductor inspection unit 100 can change the angle of incidence of the radiation light incident on the semiconductor workpiece by rotating the radiation light source 160. The rotation of the radiation detector 140 is coordinated with the rotation of the radiation light source 160 to ensure that multiple radiation images of an inspected area of ​​the semiconductor workpiece can be received by the radiation detector 140.

[0068] In some embodiments, using the semiconductor inspection unit 100 shown in Figures 2A and 2B as an example, the plate rotation unit 130 can be separated from the carrier plate 110 that receives the semiconductor workpiece without rotating the carrier plate 110. Furthermore, the plate rotation unit 130 can be coupled to a radiation source 160 that emits radiation light, rotating the radiation source 160 along a rotation axis at multiple first rotation angles. In other words, the plate rotation unit 130 can function as a light source rotation unit. In some embodiments, the rotation axis is parallel to an optical axis of the radiation light. In some embodiments, the detection movement unit 150 can be coupled to a radiation detector 140 that detects the radiation light, and the detection movement unit 150 is configured to move the radiation detector 140 along the second, third, and / or fourth movement directions. In some embodiments, the second movement direction can be parallel to the rotation axis, while the third and fourth movement directions, which are different from each other, can be perpendicular to the rotation axis. In other words, the detection movement unit 150 can move the radiation detector 140 in two different directions perpendicular to the rotation axis. Therefore, the detection movement unit 150 can rotate the radiation detector 140 by moving in the third and fourth movement directions. Therefore, the detection movement unit 150 can also be configured to rotate the radiation detector 140 along the rotation axis at multiple second rotation angles. In other words, the detection movement unit 150 can also function as a detection rotation unit. In some embodiments, the semiconductor detection unit 100 can also include a movement rotation unit in addition to the detection movement unit 150. In some embodiments, the radiation light source 160 and the radiation detector 140 are disposed on opposite sides of the carrier plate 110.

[0069] In some embodiments, each of the plurality of second rotation angles of the detection rotation unit corresponds one-to-one to one of the plurality of first rotation angles of the light source rotation unit. Furthermore, when the light source rotation unit rotates the radiation source 160 to a specific first rotation angle among the plurality of first rotation angles, the detection rotation unit correspondingly rotates the radiation detector 140 to a specific second rotation angle among the plurality of second rotation angles. Therefore, when the light source rotation unit rotates the radiation source 160 to the specific first rotation angle among the plurality of first rotation angles, the radiation detector 140 receives a specific radiation image among the plurality of radiation images.

[0070] In some embodiments, when the radiation source 160 rotates along with the light source rotating unit, the light source moving unit 120 can still be coupled to the radiation source 160 to move the radiation source 160 along a first moving direction. In some embodiments, the first moving direction is parallel to the rotation axis.

[0071] In some embodiments, when the radiation light source 160 rotates with the light source rotation unit, the light source movement unit 170 can still move the radiation light source 160 along the first movement direction. Therefore, the light source movement unit 170 can still determine a light source distance along the first movement direction between the semiconductor workpiece and the radiation plane of the radiation light source 160. This light source distance can be the source-to-target distance (SOD). Furthermore, the detection movement unit 150 can also move the radiation detector 140 along a second movement direction parallel to the first movement direction, while the light source movement unit 170 can move the radiation light source 160 along the first movement direction. Therefore, a detection distance along the first movement direction between the detection plane of the radiation detector 140 and the radiation plane of the radiation light source 160 can be determined by the detection movement unit 150 and the light source movement unit 170. This detection distance can be the source-to-detector distance (SDD). The magnification (e.g., magnification) of the multiple radiation images can be determined based on the light source distance along the first movement direction and the detection distance along the first movement direction. In some embodiments, the magnification of the plurality of radiation images may be equal to a quotient obtained by dividing SDDz by SODz (SDDz / SODz).

[0072] In some embodiments, when the radiation source 160 rotates, the computing unit 10 can still be an image adjustment unit coupled to the radiation detector 140 and configured to determine multiple pixel values ​​by weightedly combining the multiple radiation images to reconstruct a sample image of the detected area. Furthermore, the computing unit 10 can also be a control unit coupled to at least one of the plate movement unit 120, the plate rotation unit 130, the radiation detector 140, the detection movement unit 150, the radiation source 160, or the light source movement unit 170. In some embodiments, the control unit can control the plate movement unit 120 to move the carrier plate 110. In some embodiments, the control unit can control the plate rotation unit 130, which functions as a light source rotation unit, to rotate the radiation source 160. In some embodiments, the control unit can control the radiation detector 140 to detect or stop detecting the radiation light, control the detection movement unit 150 to move the radiation detector 140, or control the detection movement unit 150, which functions as a detection rotation unit, to rotate the radiation detector 140. In some embodiments, the control unit can control the radiation light source 160 to emit or stop emitting the radiation light, and control the light source moving unit 170 to move the radiation light source 160 .

[0073] 3 shows a flow chart of a semiconductor inspection method 300 for inspecting a semiconductor workpiece using the semiconductor inspection apparatus 1 according to one or more techniques of the present disclosure. Since there are many ways to inspect the semiconductor workpiece, the semiconductor inspection method 300 is only an example.

[0074] The semiconductor detection method 300 may be performed using the configurations shown in Figures 1 and 2A and 2B. The components of these figures may be referenced in the description of the semiconductor detection method 300. Each block in Figure 3 may represent one or more processes, methods, or subroutines performed.

[0075] The order in which the blocks appear in Figure 3 is for illustration only and is not intended to limit the scope of the present disclosure, and is therefore subject to change. Additional blocks may be added or fewer blocks may be used without departing from the present disclosure.

[0076] At block 310 , the semiconductor inspection device 1 receives a semiconductor workpiece onto the carrier plate 110 of the semiconductor inspection device 1 .

[0077] Figures 4A and 4B respectively illustrate a semiconductor workpiece 400 and the carrier plate 110, radiation detector 140, and radiation source 160 illustrated in Figure 2A , according to one or more techniques of the present disclosure. Referring to Figures 2A , 4A , and 4B , semiconductor workpiece 400 may be received on carrier plate 110. Radiation source 160 may be positioned below carrier plate 110, and radiation detector 140 may be positioned above carrier plate 110. In some embodiments, radiation source 160 may be positioned above carrier plate 110, and radiation detector 140 may be positioned below carrier plate 110. In some embodiments, semiconductor workpiece 400 may be a workpiece fabricated for connecting multiple layers of chips, particularly for use in a chip-on-wafer-on-substrate (CoWoS) process.

[0078] A semiconductor workpiece 400 can be placed on the support surface 111 of the carrier plate 110 so that the semiconductor inspection device 1 can inspect an inspection area of ​​the semiconductor workpiece 400. Furthermore, the carrier plate 110 can move along a movement plane perpendicular to the rotation axis 112 of the carrier plate 110 or the radiation source 116. Therefore, when the semiconductor workpiece 400 is received on the carrier plate 110, a center point of the inspection area of ​​the semiconductor workpiece 400 can move along the movement plane to align with an intersection between the support surface 111 of the carrier plate 110 and the rotation axis 112.

[0079] The radiation detector 140 can move along a third movement direction perpendicular to the rotation axis 112, but the radiation source 160 does not need to move along this third movement direction. Therefore, when the radiation detector 140 moves along this third movement direction, the horizontal distance between the centerline 142 of the detection plane 141 in the radiation detector 140 and the optical axis 162 of the radiation source 160 can change. Furthermore, when the radiation detector 140 moves along this third movement direction, the tilt angle between a line between a center point of the detection plane 141 and a center point of the radiation plane 161 of the radiation source 160 and the optical axis 162 can change. For example, this tilt angle can change from a first angle θ1 to a second angle θ2.

[0080] The radiation light can penetrate the semiconductor workpiece 400 and be received by the radiation detector 140. To clearly capture an image showing the internal structure of the detected region of the semiconductor workpiece 400, the radiation detector 140 can move along the third movement direction to select a detection position. The detection position can be related to at least one of the thickness or internal structure of the semiconductor workpiece 400. For example, when the semiconductor workpiece 400 is thick, the detection position can be close to the optical axis 162. When the semiconductor workpiece 400 contains a small number of sparsely distributed components, the detection position can be farther from the optical axis 162.

[0081] At block 320 , the semiconductor inspection device 1 emits a radiation light toward the semiconductor workpiece 400 via the radiation light source 160 of the semiconductor inspection device 1 .

[0082] The radiation source 160 may have a radiation plane 161, and the radiation light may be emitted from the radiation plane 161 along an optical axis 162. Since the carrier plate 110 may not move along the optical axis 162, the semiconductor workpiece 400 may also not move along the optical axis 162. The radiation source 160 may be moved along the first movement direction to a light source position by the light source movement unit 170. Since the optical axis 162 may be parallel to the first movement direction of the radiation source 160, the light source distance between the semiconductor workpiece 400 and the radiation plane 161 of the radiation source 160 along the first movement direction may be equal to the first perpendicular distance D1. Furthermore, the first movement direction may be parallel to the rotation axis 112.

[0083] At block 330 , the semiconductor inspection device 1 detects the radiation light via the radiation detector 140 of the semiconductor inspection device 1 to receive a plurality of radiation images of the inspected region in the semiconductor workpiece 400 .

[0084] The radiation detector 140 may have a detection plane 141, and the radiation light may be detected by the detection plane 141 to receive radiation images. The radiation detector 140 may be moved to a detection position along the second, third, and / or fourth movement directions by the detection movement unit 150. Because the second movement direction of the radiation detector 140 may be parallel to the first movement direction, the detection distance along the first movement direction between the detection plane 141 of the radiation detector 140 and the radiation plane 161 of the radiation light source 160 may be equal to a second perpendicular distance D2. Therefore, the magnification of the multiple radiation images received by the radiation detector 140 may be equal to the quotient (D2 / D1) obtained by dividing the second perpendicular distance D2 by the first perpendicular distance D1. Furthermore, the second movement direction may be parallel to the rotation axis 112, and the third and fourth movement directions may be perpendicular to the rotation axis 112.

[0085] In some embodiments, the carrier plate 110 can be rotated along a rotation axis 112 to a plurality of rotation angles by the plate rotation unit 130. The rotation axis 112 can be parallel to the optical axis 162 of the radiation source 160. When the carrier plate 110 is rotated by the plate rotation unit 130 to detect the inspected region of the semiconductor workpiece 400, the radiation detector 140 can receive the plurality of radiation images of the inspected region. Therefore, when the carrier plate 110 is rotated to a particular one of the plurality of rotation angles, a particular one of the plurality of radiation images can be received by the radiation detector 140. Each radiation image can correspond to one of the plurality of rotation angles.

[0086] In some other embodiments, the carrier plate 110 may not be rotated by the plate rotation unit 130. Instead, the radiation light source 160 may be rotated along the rotation axis 112 to a plurality of first rotation angles by a light source rotation unit (e.g., the plate rotation unit 130 may serve as the light source rotation unit). The rotation axis 112 may be parallel to the optical axis 162 of the radiation light source 160. While the radiation light source 160 is rotated by the light source rotation unit, the radiation detector 140 may be rotated by a detection rotation unit (e.g., the detection movement unit 150 may serve as the detection rotation unit) to receive the plurality of radiation images of the inspected area of ​​the semiconductor workpiece 400. Therefore, when the light source rotation unit rotates the radiation light source 160 to a specific first rotation angle among the plurality of first rotation angles, the radiation detector 140 receives a specific radiation image among the plurality of radiation images. Each radiation image may correspond to one of the plurality of first rotation angles.

[0087] At block 340 , the semiconductor detection device 1 determines a plurality of pixel values ​​by weighted combination of the plurality of radiation images to reconstruct a sample image of the detected area.

[0088] In some embodiments, when the carrier plate 110 is rotated to the multiple rotation angles, a detection point in the detected area of ​​the semiconductor workpiece 400 can be moved to multiple target positions. When the detection point is located at the multiple target positions, the detection point can be detected to generate multiple point values. The multiple point values ​​are respectively included in one of the multiple radiation images. For example, when the carrier plate 110 is rotated to the specific one of the multiple rotation angles and the radiation detector 140 receives the specific one of the multiple radiation images, the detection point in the detected area can be moved to the specific one of the multiple target positions, and the radiation detector 140 can detect the detection point to determine the specific one of the multiple point values. Therefore, each target position and each point value of the detection point can correspond to one of the multiple rotation angles and one of the multiple radiation images.

[0089] The distance between radiation source 160 and radiation detector 140 can affect the intensity of the multiple radiation images. As the distance between radiation source 160 and radiation detector 140 increases, the intensity of the multiple radiation images decreases. Therefore, when the target position changes due to rotation, the intensity of the multiple point values ​​for the detection point in the multiple radiation images may also change. Therefore, to ensure that the multiple pixel values ​​of the reconstructed sample image are correct, computing unit 10 may perform a weighted combination of the multiple radiation images and multiple distance value sets to reconstruct the sample image of the detected area.

[0090] By weightedly combining the multiple point values ​​of the detection point with the multiple detection distances, a specific pixel value from the multiple pixel values ​​in the sample image can be generated for the detection point. The multiple detection distances can include a specific set of distance values ​​corresponding to the detection point from the multiple sets of distance values. Furthermore, each detection distance can be determined based on a corresponding one of the multiple target positions.

[0091] Multiple straight lines can be connected from the light source position of the radiation source 160 through the multiple target positions to the detection position of the radiation detector 140. Each detection distance can be the same as the length of a corresponding one of the multiple straight lines. A specific one of the multiple straight lines can be connected from the center point of the radiation plane 161 of the radiation source 160 through a specific one of the multiple target positions to the detection plane 141, and the specific one of the multiple detection distances corresponding to the specific one of the multiple detection distances can be the same as the length of the specific one of the straight lines.

[0092] Figures 5A and 5B , according to one or more techniques of the present disclosure, respectively illustrate two schematic diagrams of the radiation detector 140, semiconductor workpiece 400, and radiation source 160 illustrated in Figure 4A . When semiconductor workpiece 400 is detected by a semiconductor detection device, it can be viewed as having multiple cross-sectional plates in an XY plane. For example, semiconductor workpiece 400 can include a first cross-sectional plate 410 (e.g., in the z1 plane) and a second cross-sectional plate 420 (e.g., in the z2 plane). In some embodiments, both first cross-sectional plate 410 and second cross-sectional plate 420 can be in the same XY plane.

[0093] In addition, since the radiation light can penetrate the semiconductor workpiece 400, the radiation image can be a combination of multiple panel values ​​generated from each cross-sectional panel of the semiconductor workpiece 400 to generate the multiple point values. Therefore, before the detection begins, one of the multiple cross-sectional panels can be selected as the focal plane to be detected. The radiation light can be focused on the selected cross-sectional panel, and the radiation detector 140 can receive a clear image of the selected cross-sectional panel. In addition, other information generated from other cross-sectional panels in the radiation image may be blurred. When the multiple radiation images are weighted and combined, other information generated from other cross-sectional panels may be diluted.

[0094] In some embodiments, the first cross-sectional plate 410 may be initially selected as the focal plane. When the detection point P1 is located at a first target position (x ) on the first cross-sectional plate 410 in FIG. 5A , 11 ,y 11 , z1)411, the radiation detector 140 can detect the radiation at the detection plane 141 (for example, at z d A first detection position (x′) on the plane 11 ,y′ 11 ,z d )1411, a first point value I is received for the detection point P1 P11 (x′ 11 ,y′ 11 ,z d ). In addition, when the carrier plate 110 rotates from a first rotation angle ω1 to a second rotation angle ω2, the position of the detection point P1 is changed from the first target position (x 11 ,y 11 , z1) 411 is converted to a second target position (x 12 ,y 12 , z1)412, the radiation detector 140 can be at a second detection position (x′) of the detection plane 141 12 ,y′ 12 ,z d)1412, a second point value I is received for the detection point P1 P12 (x′ 12 ,y′ 12 ,z d ). However, since the center point of the radiation source 160 and the first detection position (x′) 11 ,y′ 11 ,z d ) a first distance between a radial line segment 163 and 1411 It may be shorter than the distance between the center point of the radiation source 160 and the second detection position (x′ 12 ,y′ 12 ,z d ) 1412 a second distance between a radial line segment 164 The first point value I P11 (x′ 11 ,y′ 11 ,z d ) may be greater than the second point value I P12 (x′ 12 ,y′ 12 ,z d ) intensity. Therefore, when the multiple radiation images are weightedly combined to reconstruct the sample image of the first cross-sectional plate 410, each point value I of the detection point P1 P1k (x′ 1k ,y′ 1k ,z d ) can be respectively compared with the distance value Perform weighted combination to generate the plurality of pixel values ​​in the sample image of the first cross-sectional plate 410 The weighted combination equation is shown below:

[0095] In addition, although each point value I of the detection point P1 P1k (x′ 1k ,y′ 1k ,z d ) may include some information generated from other cross-sectional plates (eg, the second cross-sectional plate 420), but when the plurality of point values ​​I of the detection point P1 P1k (x′ 1k ,y′ 1k ,z d ) and the multiple distances When performing weighted combination, information generated from other cross-sectional panels may be diluted. To display the sample image of the first cross-sectional panel 410, the semiconductor detection device 1 may select a first sample angle from the plurality of rotation angles and use the coordinate values ​​generated by rotating the first cross-sectional panel at the first sample angle. For example, the first sample angle may be the first rotation angle ω1.

[0096] In addition, when all pixel values ​​of the sample image of the first cross-sectional plate 410 are generated, the second cross-sectional plate 420 can be selected as the focal plane to reconstruct the sample image of the second cross-sectional plate 420. When the detection point P2 is located at a third target position (x 21 ,y 21 , z2)421, the radiation detector 140 can be at a third detection position (x′) of the detection plane 141. 21 ,y′ 21 ,z d )1421, a third point value I is received for the detection point P2 P21 (x′ 21 ,y′ 21 ,z d ). In addition, when the carrier plate 110 rotates from the first rotation angle ω1 to the second rotation angle ω2, the position of the detection point P2 is changed from the first target position (x 21 ,y 21 , z2) 421 is converted to a fourth target position (x 22 ,y 22 , z2)422, the radiation detector 140 can be at a fourth detection position (x′) on the detection plane 141. 22 ,y′ 22 ,z d )1412, a fourth value I is received for the detection point P2 P22 (x′ 22 ,y′ 22 ,z d ). When the plurality of radiation images are weightedly combined to reconstruct the sample image of the second cross-sectional plate 420, each point value I of the detection point P2 P2k (x′ 2k ,y′ 2k ,z d ) can be respectively compared with the distance value Perform weighted combination to generate the plurality of pixel values ​​in the sample image of the second cross-sectional plate 420 The weighted combination equation is shown below:

[0097] In addition, although each point value I of the detection point P2 P2k (x′ 2k ,y′ 2k ,z d ) may include some information generated from other cross-sectional plates (eg, the first cross-sectional plate 410), but when the plurality of point values ​​I of the detection point P2 P2k (x′ 2k ,y′ 2k ,z d ) and the multiple distances When performing weighted combination, information generated from other cross-sectional panels may be diluted. To display the sample image of the second cross-sectional panel 420, the semiconductor detection device 1 can select a second sample angle from the plurality of rotation angles and use the coordinate values ​​generated by rotating the second cross-sectional panel at the second sample angle. The first sample angle can be the same as or different from the second sample angle. For example, the second sample angle can be the second rotation angle ω2.

[0098] In some other embodiments, the semiconductor workpiece 400 may be pre-moved by the plate moving unit 120 so that the detection point in the detected area is moved to a target position. When the light source rotation unit rotates the radiation source 160 to the multiple first rotation angles, the radiation source 160 may be correspondingly moved to multiple light source positions. When the radiation source 160 is located at each of the multiple light source positions, the detection point in the detected area of ​​the semiconductor workpiece 400 is detected at the target position and generates multiple point values, each of which is included in one of the multiple radiation images. For example, when the radiation source 160 is rotated to a specific one of the multiple first rotation angles and the radiation detector 140 receives the specific one of the multiple radiation images, the radiation source 160 may be moved to the specific one of the multiple light source positions, and the radiation detector 140 may be moved to the specific one of the multiple detection positions to detect the detection point and determine the specific one of the multiple point values. Therefore, each light source position and each point value of the radiation light source 160 can correspond to one first rotation angle of the plurality of first rotation angles and one radiation image of the plurality of radiation images.

[0099] The distance between radiation source 160 and radiation detector 140 can affect the intensity of the multiple radiation images. As the distance between radiation source 160 and radiation detector 140 increases, the intensity of the multiple radiation images decreases. Therefore, when the light source position changes due to rotation, the intensity of the multiple point values ​​for the detection point in the multiple radiation images may also change. Therefore, to ensure that the multiple pixel values ​​of the reconstructed sample image are correct, computing unit 10 may perform a weighted combination of the multiple radiation images and multiple distance value sets to reconstruct the sample image of the detected area.

[0100] By weightedly combining the multiple point values ​​of the detection point with the multiple detection distances, a specific pixel value from the multiple pixel values ​​in the sample image can be generated for the detection point. The multiple detection distances can include a specific set of distance values ​​corresponding to the detection point from the multiple sets of distance values. Furthermore, each detection distance can be determined based on a corresponding one of the multiple light source positions. In other words, each detection distance can also be determined based on a corresponding one of the multiple detection positions.

[0101] A plurality of straight lines can be connected from the multiple light source positions of the radiation source 160, through the target position, and then to a corresponding one of the multiple detection positions of the radiation detector 140. Each detection distance can be the same as the length of a corresponding one of the plurality of straight lines. A specific one of the plurality of straight lines can be connected from the center point of the radiation plane 161 of the radiation source 160 at the specific light source position, through the target position, and then to the detection plane 141 of the radiation detector 140. The specific one of the plurality of detection distances corresponding to the specific light source position can be the same as the length of the specific one of the straight lines.

[0102] Figures 5C and 5D , according to one or more techniques of the present disclosure, respectively illustrate two schematic diagrams of the radiation detector 140, semiconductor workpiece 400, and radiation source 160 illustrated in Figure 4A . When semiconductor workpiece 400 is inspected by a semiconductor inspection device, it can be viewed as having multiple cross-sectional panels on the XY plane (e.g., a third cross-sectional panel 430 on the z3 plane and a fourth cross-sectional panel 440 on the z4 plane). In some embodiments, both third cross-sectional panel 430 and fourth cross-sectional panel 440 can be a single XY plane.

[0103] In addition, since the radiation light can penetrate the semiconductor workpiece 400, the radiation image can be a combination of multiple panel values ​​generated from each cross-sectional panel of the semiconductor workpiece 400 to generate the multiple point values. Therefore, before the detection begins, one of the multiple cross-sectional panels can be selected as the focal plane to be detected. The radiation light can be focused on the selected cross-sectional panel, and the radiation detector 140 can receive a clear image of the selected cross-sectional panel. In addition, other information generated from other cross-sectional panels in the radiation image may be blurred. When the multiple radiation images are weighted and combined, other information generated from other cross-sectional panels may be diluted.

[0104] In some embodiments, the third cross-sectional plate 430 may be initially selected as the focal plane. A detection point P3 in the detected area may be located at a fifth target position (x ) on the third cross-sectional plate 430 in FIG. 5C . 31 ,y 31 , z3) 431. When the radiation source 160 is located at a first light source position (x s1 ,y s1 ,z s )1601, the radiation detector 140 may detect the radiation at the detection plane 141 (e.g., at z d A fifth detection position (x′) on the plane 31 ,y′ 31 ,z d )1431, a fifth point value I is received for the detection point P3 P31 (x′ 31 ,y′ 31 ,z d ). In addition, when the radiation source 160 rotates from the first rotation angle ω1 to the second rotation angle ω2, so as to move the radiation source from the first light source position (x s1 ,y s2 ,z s )1601 switches to a second light source position (x in FIG5D s2 ,y s2 ,z s )1602, the radiation detector 140 may be at a sixth detection position (x′) on the detection plane 141. 32 ,y′ 32 ,z d )1432, a sixth value I is received for the detection point P3 P32 (x′ 32 ,y′ 32 ,z d However, at the first light source position (x s1 ,y s1 ,z s)1601 and the center point of the radiation source 160 and the fifth detection position (x′ 31 ,y′ 31 ,z d )1431 a third distance of a radial line segment 165 between Possibly related to the second light source position (x s2 ,y s2 ,z s )1602 and the center point of the radiation source 160 and the sixth detection position (x′ 32 ,y′ 32 ,z d )1432 a fourth distance of a radial line segment 166 between is different, so the fifth point value is I P31 (x′ 31 ,y′ 31 ,z d ) may be related to the sixth point value I P32 (x′ 32 ,y′ 32 ,z d ) have different intensities. Therefore, when the multiple radiation images are weightedly combined to reconstruct the sample image of the third cross-sectional plate 430, each point value I of the detection point P3 P3k (x′ 3k ,y′ 3k ,z d ) can be respectively compared with the distance value Perform weighted combination to generate the plurality of pixel values ​​in the sample image of the third cross-sectional plate 430 The weighted combination equation is shown below:

[0105] In addition, although each point value I of the detection point P3 P3k (x′ 3k ,y′ 3k ,z d ) may include some information generated from other cross-sectional plates (eg, the fourth cross-sectional plate 440), but when the plurality of point values ​​I of the detection point P3 P3k (x′ 3k ,y′ 3k ,z d ) and the multiple distances When performing weighted combination, information generated from other cross-sectional panels may be diluted. To display the sample image of the third cross-sectional panel 430, the semiconductor detection device 1 may select a first sample angle from the plurality of rotation angles and use the coordinate values ​​generated by rotating the third cross-sectional panel 430 at the first sample angle. For example, the first sample angle may be the first rotation angle ω1.

[0106] Furthermore, when all pixel values ​​of the sample image of the third cross-sectional plate 430 are generated, the fourth cross-sectional plate 440 may be selected as the focal plane to reconstruct the sample image of the fourth cross-sectional plate 440. A detection point P4 in the detected area may be located at a seventh target position (x ) on the fourth cross-sectional plate 440 in FIG. 41 ,y 41 , z4) 441. When the radiation light source 160 is located at the first light source position (x s1 ,y s1 ,z s )1601, the radiation detector 140 may detect the radiation at the detection plane 141 (e.g., at z d A seventh detection position (x′) on the plane 41 ,y′ 41 ,z d )1441, a seventh point value I is received for the detection point P4 P41 (x′ 41 ,y′ 41 ,z d ). In addition, when the radiation light source 160 rotates from the first rotation angle ω1 to the second rotation angle ω2, the radiation light source is converted to the second light source position (x s2 ,y s2 ,z s )1602, the radiation detector 140 may be at an eighth detection position (x′) on the detection plane 141. 42 ,y′ 42 ,z d )1442, receives an eighth point value I for the detection point P4 P42 (x′ 42 ,y′ 42 ,z d ). Therefore, when the plurality of radiation images are weightedly combined to reconstruct the sample image of the fourth cross-sectional plate 440, each point value I of the detection point P4 P4k (x′ 4k ,y′ 4k ,z d ) can be respectively compared with the distance value Perform weighted combination to generate the plurality of pixel values ​​in the sample image of the fourth cross-sectional plate 440 The weighted combination equation is shown below:

[0107] In addition, although each point value I of the detection point P4 P4k (x′ 4k ,y′ 4k ,z d ) may include some information generated from other cross-sectional plates (eg, the third cross-sectional plate 430), but when the plurality of point values ​​I of the detection point P4 P4k (x′ 4k ,y′ 4k ,z d ) and the multiple distances When performing weighted combination, information generated from other cross-sectional panels may be diluted. To display the sample image of the fourth cross-sectional panel 440, the semiconductor detection device 1 can select a second sample angle from the multiple rotation angles and use the coordinate values ​​generated by rotating the fourth cross-sectional panel 440 at the second sample angle. The first sample angle can be the same as or different from the second sample angle. For example, the second sample angle can be the second rotation angle ω2.

[0108] The semiconductor inspection device 1 can receive a sample image for each cross-sectional panel of the semiconductor workpiece 400. The semiconductor inspection device 1 can combine all the sample images to reconstruct a three-dimensional (3D) image of the inspected region of the semiconductor workpiece 400. When reconstructing the 3D image, coordinate values ​​generated based on the same sample angle can be used to generate the sample images for the multiple cross-sectional panels of the semiconductor workpiece 400. For example, the sample images for the first cross-sectional panel 410 and the second cross-sectional panel 420 can be generated based on the first rotation angle ω1.

[0109] 6 shows a flow chart of a semiconductor inspection method 600 for inspecting a semiconductor workpiece using the semiconductor inspection apparatus 1 according to one or more techniques of the present disclosure. Since there are many ways to inspect the semiconductor workpiece, the semiconductor inspection method 600 is only an example.

[0110] The semiconductor detection method 600 may be performed using the configurations shown in Figures 1 and 2A and 2B. The components of these figures may refer to the description of the semiconductor detection method 600. Each block in Figure 6 may represent one or more processes, methods, or subroutines performed.

[0111] The order in which the blocks appear in Figure 6 is for illustration only and is not intended to limit the scope of the present disclosure, and is therefore subject to change. Additional blocks may be added or fewer blocks may be used without departing from the present disclosure.

[0112] At block 610 , the semiconductor inspection device 1 receives a semiconductor workpiece having a plurality of through-hole elements onto the carrier plate 110 of the semiconductor inspection device 1 .

[0113] 2A , 4A , and 4B , a semiconductor workpiece 400 may be received on a carrier plate 110. A radiation source 160 and a radiation detector 140 may be disposed on opposite sides of the carrier plate 110. In some embodiments, the radiation source 160 may be disposed below the carrier plate 110, and the radiation detector 140 may be disposed above the carrier plate 110. In some embodiments, the radiation source 160 may be disposed above the carrier plate 110, and the radiation detector 140 may be disposed below the carrier plate 110.

[0114] A semiconductor workpiece 400 can be received on the support surface 111 of the carrier plate 110 for the semiconductor inspection device 1 to inspect an inspection region of the semiconductor workpiece 400. Furthermore, the carrier plate 110 can move along a movement plane perpendicular to the rotation axis 112 of the carrier plate 110 or the radiation source 116. Therefore, when the semiconductor workpiece 400 is received on the carrier plate 110, the inspection region of the semiconductor workpiece 400 can move along the movement plane to align with an intersection between the support surface 111 of the carrier plate 110 and the rotation axis 112.

[0115] The radiation detector 140 can move along a third movement direction perpendicular to the rotation axis 112, but the radiation source 160 does not need to move along this third movement direction. Therefore, when the radiation detector 140 moves along the third movement direction, the horizontal distance between the centerline 142 of the detection plane 141 in the radiation detector 140 and the optical axis 162 of the radiation source 160 can change. Furthermore, when the radiation detector 140 moves along the third movement direction, the inclination angle between the line between the center point of the detection plane 141 and the center point of the radiation plane 161 of the radiation source 160 and the optical axis 162 can change from a first angle θ1 to a second angle θ2.

[0116] FIG7 shows a schematic diagram of the semiconductor workpiece 400 illustrated in FIG4A according to one or more techniques of the present disclosure. The semiconductor workpiece 400 may include an interposer 4100 and a plurality of through-via components 4101. In some embodiments, the interposer 4100 may be a silicon interposer, and the plurality of through-via components 4101 may be a plurality of through silicon vias (TSVs). In some embodiments, the interposer 4100 may be a glass interposer, and the plurality of through-via components 4101 may be a plurality of through glass vias (TGVs). The detected area 4110 may be an area including a portion of the plurality of through-via components 4101. In some embodiments, the semiconductor workpiece 400 may be a workpiece manufactured for connecting multi-layer chips, particularly for use in a chip-on-wafer-on-substrate (CoWoS) process. In some embodiments, the semiconductor workpiece 400 may be a multi-layer ceramic capacitor (MLCC). Therefore, the semiconductor inspection apparatus 1 can inspect multiple layers in the semiconductor workpiece 400 to check the stacking states of these layers.

[0117] The radiation light can penetrate the semiconductor workpiece 400 and be received by the radiation detector 140. To clearly capture the internal structure of the detected area 4110 (e.g., multiple via components 4101) that can be displayed on the semiconductor workpiece 400, the radiation detector 140 can move along the third movement direction to select a detection position. The detection position can be related to at least one of the thickness or internal structure of the semiconductor workpiece 400. For example, when the semiconductor workpiece 400 is thick, the detection position can be close to the optical axis 162. When the semiconductor workpiece 400 contains a small number of sparsely distributed components (e.g., multiple via components 4101), the detection position can be away from the optical axis 162.

[0118] At block 620 , the semiconductor inspection device 1 emits a radiation light toward the semiconductor workpiece 400 via the radiation light source 160 of the semiconductor inspection device 1 .

[0119] The radiation source 160 may have a radiation plane 161, and the radiation light may be emitted from the radiation plane 161 along an optical axis 162. Since the carrier plate 110 may not move along the optical axis 162, the semiconductor workpiece 400 may also not move along the optical axis 162. The radiation source 160 may be moved along the first movement direction to a light source position by the light source movement unit 170. Since the optical axis 162 may be parallel to the first movement direction of the radiation source 160, the light source distance between the semiconductor workpiece 400 and the radiation plane 161 of the radiation source 160 along the first movement direction may be equal to the first perpendicular distance D1. Furthermore, the first movement direction may be parallel to the rotation axis 112.

[0120] At block 630 , the semiconductor inspection device 1 detects the radiation light via the radiation detector 140 of the semiconductor inspection device 1 to receive a detection image of the inspection area 4110 of the semiconductor workpiece 400 .

[0121] The radiation detector 140 may have a detection plane 141, and the radiation light may be detected by the detection plane 141 to receive a detection image. The radiation detector 140 may be moved to a detection position along the second, third, and / or fourth movement directions by the detection movement unit 150. Because the second movement direction of the radiation detector 140 may be parallel to the first movement direction, the detection distance along the first movement direction between the detection plane 141 of the radiation detector 140 and the radiation plane 161 of the radiation light source 160 may be equal to a second perpendicular distance D2. Therefore, the magnification of the detection image received by the radiation detector 140 may be equal to the quotient (D2 / D1) obtained by dividing the second perpendicular distance D2 by the first perpendicular distance D1. Furthermore, the second movement direction may be parallel to the rotation axis 112, and the third and fourth movement directions may be perpendicular to the rotation axis 112.

[0122] At block 640 , the semiconductor inspection apparatus 1 determines whether the number of the plurality of device images in the inspection image is greater than or equal to a number threshold.

[0123] The multiple through-hole components 4101 in the detected area 4110 can be detected to generate multiple through-hole images. Each through-hole component 4101 can generate one through-hole image among the multiple through-hole images. However, some of the through-hole images among the multiple through-hole images may overlap with adjacent through-hole images, thereby generating some component images among the multiple component images in the detection image, while other through-hole images may be separated and each generate one component image among the other component images in the detection image. For example, the two through-hole images generated by detecting two adjacent through-hole components 4101 may overlap and generate only one component image, while the two through-hole images generated by detecting two adjacent through-hole components 4101 may also be separated and generate two component images. In other words, when the two through-hole images do not overlap, the two through-hole images may be separated and each generate two component images in the detection image. Figures 8A and 8B illustrate two detection images captured by the carrier plate 110 or radiation source 160 at different rotation angles, according to one or more techniques of the present disclosure. In Figure 8A , each through-hole image overlaps with the through-hole image above and below it, resulting in only four component images in the detection image in Figure 8A . In Figure 8B , each through-hole image is separated, resulting in more than ten component images in the detection image in Figure 8B .

[0124] The number threshold can be used to determine whether there are component images generated by overlapping through-hole images in the detection image. When the number of the multiple component images in the detection image is greater than or equal to the number threshold, the semiconductor detection device 1 can determine that there are no overlapping through-hole images in the detection image. In addition, when the number of the multiple component images in the detection image is less than the number threshold, the semiconductor detection device 1 can determine that there are multiple overlapping through-hole images in the detection image. Therefore, in some embodiments, when the number of the multiple component images in the detection image is less than the number threshold, the detection image can be ignored, and the plate rotation unit 130 can rotate the carrier plate 110 to detect the detection area 4110 at other rotation angles and receive other detection images. In some other embodiments, when the number of the multiple component images in the detection image is less than the number threshold, the detection image can be ignored, and the light source rotation unit (for example, the flat plate rotation unit 130 serving as the light source rotation unit) can rotate the radiation light source 160 to detect the detected area 4110 at other rotation angles and receive other detection images.

[0125] In some embodiments, when the distribution and density of the plurality of through-via components 4101 are predetermined, the quantity threshold can be estimated based on the distribution and density of the plurality of through-via components 4101. For example, the quantity threshold can be calculated based on the magnification and image size of the detection image and the distribution and density of the through-via components 4101 to roughly estimate the number of the plurality of through-via components 4101 present in the detection area 4110.

[0126] The location of the detected area 4110 can affect the number of component images within the detected area. For example, some through-hole components 4101 excluded from the detected area 4110 may be located adjacent to the boundary of the detected area 4110. Therefore, the number of component images within the detected area may vary slightly. Furthermore, when overlap occurs, the number of component images within the detected area 4110 may be significantly reduced. Therefore, even if the threshold number is slightly lower than the estimated number, the threshold number may still not affect the determination of overlap. Therefore, the estimated number may be further multiplied by a predetermined percentage to slightly lower the threshold. In some embodiments, the predetermined percentage may be between 70% and 100%. In some embodiments, the predetermined percentage may be 70%, 75%, 80%, 85%, 90%, or 95%.

[0127] In some embodiments, the carrier plate 110 can be rotated to multiple rotational angles along the rotation axis 112 by the plate rotation unit 130. The rotation axis 112 can be parallel to the optical axis 162 of the radiation source 160. When the carrier plate 110 is rotated to the multiple rotational angles by the plate rotation unit 130 to rotate the detection area 4110 of the semiconductor workpiece 400, the radiation detector 140 can receive multiple radiation images of the detection area 4110. In some embodiments, when the carrier plate 110 is rotated to a specific rotational angle among the multiple rotational angles, the detection image can be a specific radiation image among the multiple radiation images. Each radiation image can correspond to a rotational angle among the multiple rotational angles.

[0128] In some other embodiments, the radiation light source 160 can be rotated to a plurality of first rotation angles along the rotation axis 112 by a light source rotation unit. The rotation axis 112 of the radiation light source 160 can also be parallel to the optical axis 162 of the radiation light source 160. When the radiation light source 160 detects the detection area 4110 of the semiconductor workpiece 400 from the plurality of first rotation angles by the light source rotation unit, the radiation detector 140 can receive a plurality of radiation images of the detection area 4110. In some embodiments, when the radiation light source 160 is rotated to a first specific rotation angle among the plurality of first rotation angles, the detection image can be a specific radiation image among the plurality of radiation images. Each radiation image can correspond to a first rotation angle among the plurality of first rotation angles.

[0129] The calculation unit 10 can calculate the respective quantities of the multiple component images in each radiation image to determine the multiple component quantities in the multiple radiation images. In some embodiments, the quantity threshold can be determined based on at least one component quantity among the multiple component quantities. For example, the quantity threshold can be determined based on only one component quantity among the multiple component quantities. In some embodiments, the quantity threshold can be determined based on the maximum value of the multiple component quantities. In some embodiments, the quantity threshold can be equal to the value generated by multiplying the maximum value of the multiple component quantities by the preset percentage. In addition, an average value of the multiple component quantities can be calculated, and the maximum value and the average value can be used to evaluate the quantity threshold. In some embodiments, an upper quartile (Q3) can be calculated, and the maximum value and the upper quartile can be used to evaluate the quantity threshold.

[0130] At block 650 , the semiconductor inspection device 1 determines whether there is a via defect in the plurality of via elements 4101 in the inspected region 4110 .

[0131] When the number of the plurality of component images in the inspection image is greater than or equal to the threshold number, the semiconductor inspection device 1 can determine that each via image in the inspection image is separate and generates one component image from the plurality of component images in the inspection image. Therefore, there are no overlapping via images in the inspection image to affect the determination of the via defect, and the semiconductor inspection device 1 can use the inspection image to determine whether the plurality of via components 4101 in the inspection area 4110 have the via defect. Furthermore, when the number of the plurality of component images in the inspection image is less than the threshold number, the semiconductor inspection device 1 can determine that a portion of the plurality of via images in the inspection image overlap. Therefore, when the number of the plurality of component images in the inspection image is less than the threshold number, the semiconductor inspection device 1 may not use the inspection image to determine whether the plurality of via components 4101 in the inspection area 4110 have the via defect.

[0132] The semiconductor inspection device 1 can use a first default comparison model to compare multiple component images in the inspection image with multiple via models. The first default comparison model can be a pre-trained computational model. The pre-trained computational model is used to compare each component image in the inspection image with multiple pre-stored via models. When a specific component image among the multiple component images is determined to be different from any of the pre-stored via models, the specific component image can be determined to have a defective image. When the semiconductor inspection device 1 determines that the specific component image is not generated by two overlapping via components 4101, the semiconductor inspection device 1 determines that the specific via component among the multiple via components 4101 corresponding to the specific component image has the via defect. The semiconductor inspection device 1 captures a detection sub-image from the inspection image that includes the specific component image. The specific component image is generated from the specific via component 4101 in the inspected area 4110 to display the via defect. Furthermore, the semiconductor inspection device 1 can further use a second default comparison model to compare the via defect in the inspection image with multiple defect models. This second default comparison model can also be a pre-trained computational model. This pre-trained computational model is used to compare the specific component image in the inspection sub-image with multiple pre-stored defect models. Therefore, the semiconductor inspection device 1 can determine which of multiple defect types the via defect in the inspection sub-image belongs to based on these multiple pre-stored defect models.

[0133] The through-hole defect may not have a uniform fracture surface. Therefore, when the specific through-hole component 4101 having the through-hole defect is inspected at different observation angles, the multiple component images generated by inspecting the specific through-hole component 4101 at different observation angles will be different. In addition, some through-hole defects may be detected at some of the multiple observation angles but not at other observation angles. Referring to Figures 4A, 5A, and 5B, when the inspection point P1 of the semiconductor workpiece 400 is rotated from the first target position 411 in Figure 5A to the second target position 412 in Figure 5B, the inspection point P1 can be inspected at different observation angles to obtain different inspection images. Therefore, the carrier plate 110 can be rotated to generate multiple radiation images of the inspected area 4110, and the semiconductor inspection device 1 can inspect the inspected area 4110 at different observation angles to confirm whether the through-hole component has the through-hole defect. In contrast, referring to FIG. 4A , FIG. 5C , and FIG. 5D , when the radiation source 116 is rotated from the first light source position 1601 in FIG. 5C to the second light source position 1602 in FIG. 5D , the detection point P3 of the semiconductor workpiece 400 can be detected at different observation angles to obtain different detection images. Therefore, the radiation source 160 can be rotated to generate multiple radiation images for the detection area 4110 , and the semiconductor inspection device 1 can detect the detection area 4110 at different observation angles to determine whether the through-hole component has the through-hole defect.

[0134] In some embodiments, the semiconductor inspection device 1 can determine whether each radiation image is included in the plurality of available images based on multiple comparison results between the number of component images in the plurality of radiation images and a threshold number. For example, when the number of component images in a particular radiation image in the plurality of radiation images is greater than or equal to the threshold number, the particular radiation image can be added to the plurality of available images to determine whether the through-hole defect exists in the inspected region 4110.

[0135] In some embodiments, when a specific radiation image detected at a specific rotation angle is included in the multiple available images, the semiconductor inspection device 1 can determine that a corresponding radiation image in the multiple radiation images corresponding to the specific radiation image can also be set to be included in the multiple available images. When the carrier plate 110 is rotated to a corresponding rotation angle in the multiple rotation angles corresponding to the specific rotation angle, the corresponding radiation image is received. The number of corresponding radiation images corresponding to a usable image can be equal to a positive integer Nc. This positive integer Nc can be determined based on the distribution of the multiple through-hole components 4101 in the inspected area 4110. This positive integer Nc can be equal to 2, 3, 4, or another positive integer. For example, when the positive integer Nc is equal to 4, the specific rotation angle and the corresponding rotation angle can be located in different coordinate quadrants. In addition, the angular difference between the specific rotation angle and the corresponding rotation angle can be equal to a multiple of angle N degrees. For example, when the specific rotation angle and the three corresponding rotation angles may be located in different coordinate quadrants, the value of the angle N degrees may be equal to one of 90 degrees or 180 degrees.

[0136] The multiple rotation angles can be selected from 0 to 360 degrees. Before receiving the multiple radiation images, it is very difficult to predict which rotation angle will confirm that a radiation image is included in the multiple available images. However, if the multiple radiation images are generated at all rotation angles from 0 to 360 degrees to detect the detected area 4110, this method of obtaining the multiple available images is inefficient. Therefore, the semiconductor detection device 1 can select a portion of the multiple rotation angles and detect the detected area at these rotation angles to receive multiple feature images. To ensure that at least one feature image from the multiple feature images is included in the multiple available images, the number of feature images corresponding to the number of rotation angles can be greater than or equal to a minimum number Qmin. This minimum number Qmin can be related to a predetermined percentage. As the predetermined percentage increases, the minimum number Qmin can also increase because the semiconductor detection device 1 may require more radiation images to ensure that at least one feature image from the multiple feature images is included in the multiple available images. Furthermore, as the predetermined percentage decreases, the minimum number Qmin may also decrease because the semiconductor inspection device 1 may require fewer radiation images to ensure that at least one of the plurality of characteristic images is included in the plurality of available images. In some embodiments, when the plurality of angular differences between two adjacent rotational angles in the portion of rotational angles are substantially the same, the minimum value Qmin may be equal to 30. For example, the plurality of angular differences between two adjacent rotational angles in the portion of rotational angles may be equal to 12 degrees. Furthermore, when the minimum value Qmin is equal to 28, the plurality of angular differences between two adjacent rotational angles in the portion of rotational angles may be equal to 13.

[0137] In some other embodiments, when a specific radiation image generated by the radiation light source 160 during detection at a specific first rotation angle is included in the multiple available images, the semiconductor detection device 1 can determine that a corresponding radiation image in the multiple radiation images corresponding to the specific radiation image is also included in the multiple available images. When the radiation light source 160 is rotated to a corresponding first rotation angle in the multiple first rotation angles corresponding to the specific first rotation angle, the corresponding radiation image is received. The number of corresponding radiation images corresponding to a single available image can be equal to a positive integer Nc. This positive integer Nc can be determined based on the distribution of the plurality of through-hole components 4101 in the detection area 4110. This positive integer Nc can be equal to 2, 3, 4, or another positive integer. For example, when the positive integer Nc is 4, the specific first rotation angle and the corresponding first rotation angle can be located in different coordinate quadrants. Furthermore, the angular difference between the specific first rotation angle and the corresponding first rotation angle can be equal to a multiple of N degrees. For example, when the specific first rotation angle and the three corresponding first rotation angles are located in different coordinate quadrants, the value of the angle N degrees may be equal to one of 90 degrees and 180 degrees.

[0138] The multiple first rotation angles can be selected from 0 to 360 degrees. Before receiving the multiple radiation images, it is very difficult to predict which first rotation angle will confirm that a radiation image will be included in the multiple available images. However, if all first rotation angles from 0 to 360 degrees are used to detect the detected area 4110, this method of obtaining the multiple available images is inefficient. Therefore, the semiconductor detection device 1 can select a portion of the multiple first rotation angles and detect the detected area at these first rotation angles to receive multiple feature images. To ensure that at least one feature image from the multiple feature images is included in the multiple available images, the number of feature images from the same portion of the first rotation angles can be greater than or equal to a minimum number Qmin. This minimum number Qmin can be related to a predetermined percentage. As the predetermined percentage increases, the minimum number Qmin can also increase because the semiconductor detection device 1 may require more radiation images to ensure that at least one feature image from the multiple feature images is included in the multiple available images. Furthermore, as the predetermined percentage decreases, the minimum number Qmin may also decrease because the semiconductor inspection device 1 may require fewer radiation images to ensure that at least one of the plurality of characteristic images is included in the plurality of available images. In some embodiments, when the plurality of angular differences between two adjacent first rotation angles in the portion of first rotation angles are substantially the same, the minimum value Qmin may be equal to 30. For example, the plurality of angular differences between two adjacent first rotation angles in the portion of first rotation angles may be equal to 12 degrees. Furthermore, when the minimum value Qmin is equal to 28, the plurality of angular differences between two adjacent first rotation angles in the portion of first rotation angles may be equal to 13.

[0139] In some embodiments, the semiconductor workpiece 400 may further include a substrate. In some embodiments, the semiconductor workpiece 400 may further include multiple metal layers. For example, the semiconductor workpiece 400 may include a metal layer located above the interposer 4100. Furthermore, the semiconductor workpiece 400 may include a metal layer located below the interposer 4100. In some embodiments, the semiconductor workpiece 400 may include a metal layer located above the interposer 4100 and a metal layer located below the interposer 4100. The semiconductor inspection device 1 may also use the multiple available images to determine whether the substrate has substrate defects and, based on multiple substrate defect models, determine the defect type of the substrate defects included in the inspection images. The semiconductor inspection device 1 may also use the multiple available images to determine whether the metal layer has layer defects and, based on multiple layer defect models, determine the defect type of the layer defects included in the inspection images.

[0140] Figures 9A-9C show three inspection images showing different defects according to one or more techniques of the present disclosure. The inspection image in Figure 9A includes a black dot surrounded by a frame. Based on a pre-stored model, the semiconductor inspection device 1 can determine that a hole exists in the substrate of the semiconductor workpiece 400. The inspection image in Figure 9B includes a broken via image surrounded by a frame. Based on a pre-stored model, the semiconductor inspection device 1 can determine that a specific via component corresponding to the broken via image is likely broken and lacks filler in the center of the specific via component. The inspection image in Figure 9C includes a nearly broken via image surrounded by a frame. Based on a pre-stored model, the semiconductor inspection device 1 can determine that the center of a specific via component corresponding to the nearly broken via image is likely too thin and lacks sufficient filler in the center of the specific via component.

[0141] Figures 10A-10C show three 3D images showing different defects, according to one or more techniques of the present disclosure. The inspection image in Figure 10A includes two small circles surrounded by two frames. Based on a pre-stored model, the semiconductor inspection device 1 can determine that a stress crack exists in the substrate of the semiconductor workpiece 400. The inspection image in Figure 10B includes a broken via image and a nearly broken via image. Based on the pre-stored model, the semiconductor inspection device 1 can determine that a first specific via component corresponding to the broken via image is likely broken and lacks filler in the center of the first specific via component. Furthermore, the semiconductor inspection device 1 can determine that the center of a specific via component corresponding to the nearly broken via image is likely too thin and lacks sufficient filler in the center of the specific via component. In Figure 10C, based on the pre-stored model, the semiconductor inspection device 1 can determine that a stress crack exists in the substrate of the semiconductor workpiece 400.

[0142] Although semiconductor inspection method 300 and semiconductor inspection method 600 are described in FIG3 and FIG6 , respectively, semiconductor inspection method 300 and semiconductor inspection method 600 can be combined and performed using the configurations shown in FIG1 and FIG2A and FIG2B . For example, at block 330 , when semiconductor inspection device 1 detects the radiation light via radiation detector 140 of semiconductor inspection device 1 to receive multiple radiation images of the inspected region of semiconductor workpiece 400 , semiconductor inspection device 1 can also perform the process in block 640 (e.g., determining whether the number of component images in each radiation image is greater than or equal to the number threshold) and the process in block 650 (e.g., determining whether a through-hole defect is present in the plurality of through-hole components 4101 in the inspected region 4110 ). In contrast, at block 650, when the semiconductor inspection device 1 determines whether a via defect is present in the plurality of via elements 4101 in the inspected area 4110, the semiconductor inspection device 1 may also execute the process in block 340 (e.g., determining a plurality of pixel values ​​by weighted combination of the plurality of radiation images to reconstruct a sample image of the inspected area, and further combining all the sample images to reconstruct the 3D image of the inspected area of ​​the semiconductor workpiece 400).

[0143] 2B and 7 , when the semiconductor inspection apparatus 1 completes all processes of at least one of the semiconductor inspection method 300 and the semiconductor inspection method 600 for the inspected area 4110, the plate moving unit 120 may further move the carrier plate 110 for subsequent inspection to set an area adjacent to the inspected area 4110 as the inspected area 4120. When the semiconductor inspection apparatus 1 completes all processes of at least one of the semiconductor inspection method 300 and the semiconductor inspection method 600 for each area of ​​the semiconductor workpiece 400, the semiconductor workpiece 400 may be removed from the semiconductor inspection apparatus 1.

[0144] The embodiments shown and described above are merely examples. Many details are commonly found in the art. Therefore, many of these details are neither shown nor described. Although many features and advantages of the present disclosure have been described in the foregoing description along with details of its structure and function, this disclosure is illustrative only, and changes may be made in the details. It should therefore be understood that the above-described embodiments may be modified within the scope of the claims.

Claims

1. A semiconductor detection device for detecting a semiconductor workpiece, comprising: a carrier plate configured to receive the semiconductor workpiece; a plate rotating unit coupled to the carrier plate and configured to rotate the carrier plate along a rotation axis at a plurality of rotation angles; a radiation light source configured to emit a radiation light, wherein an optical axis of the radiation light is parallel to the rotation axis; a radiation detector configured to detect the radiation light to receive a plurality of radiation images of a detected area of ​​the semiconductor workpiece, wherein: The radiation source and the radiation detector are respectively disposed on two different sides of the carrier plate, and When the plate rotating unit rotates the carrier plate to a specific rotation angle among the plurality of rotation angles, the radiation detector receives a specific radiation image among the plurality of radiation images; and An image adjustment unit is coupled to the radiation detector and configured to determine a plurality of pixel values ​​by weighted combination of the plurality of radiation images to reconstruct a sample image of the detected area.

2. The semiconductor detection device according to claim 1, wherein: When the plate rotating unit rotates the carrier plate at the plurality of rotation angles, a detection point in the detected area of ​​the semiconductor workpiece is correspondingly moved to a plurality of target positions; When the detection point is located at the plurality of target positions respectively, the detection point is detected to generate a plurality of point values, each of the plurality of point values ​​being included in one of the plurality of radiation images; By combining the plurality of point values ​​with a plurality of detection distances for weighted combination, a specific pixel value among the plurality of pixel values ​​in the sample image of the detected area is generated for the detection point; and The plurality of detection distances are each determined based on a corresponding one of the plurality of target positions.

3. The semiconductor detection device according to claim 2, wherein: The radiation source is disposed at a light source position; Each of the plurality of detection distances is the length of a corresponding one of the plurality of straight line segments; and The plurality of straight line segments are respectively connected from the light source position through the corresponding one of the plurality of target positions to the radiation detector.

4. The semiconductor detection device as claimed in claim 1, further comprising: a light source moving unit coupled to the radiation light source and configured to move the radiation light source along a first moving direction, wherein the first moving direction is parallel to the rotation axis; and A detection moving unit is coupled to the radiation detector and configured to move the radiation detector along a second moving direction and / or a third moving direction, wherein the second moving direction is parallel to the rotation axis, and the third moving direction is perpendicular to the rotation axis.

5. The semiconductor detection device according to claim 4, wherein: A light source distance between the semiconductor workpiece and a radiation plane of the radiation light source along the first moving direction is determined by the light source moving unit; A detection distance between a detection plane of the radiation detector and the radiation plane of the radiation light source along the first moving direction is determined by the light source moving unit and the detection moving unit; and The magnifications of the plurality of radiation images are determined based on the light source distance and the detection distance along the first moving direction.

6. The semiconductor detection device according to claim 1, wherein: The semiconductor workpiece includes a plurality of through-hole components; The plurality of through-hole components in the inspected area of ​​the semiconductor workpiece are inspected to generate a plurality of component images in the plurality of radiation images; When the number of the plurality of component images in the specific radiation image is greater than or equal to a number threshold, setting the specific radiation image to be added to the plurality of available images; and The plurality of available images are used to determine whether a via defect exists in the plurality of via components in the inspected area.

7. The semiconductor detection device according to claim 6, wherein: When the specific radiation image is set to belong to the multiple available images, a corresponding radiation image in the multiple radiation images corresponding to the specific radiation image is added to the multiple available images; The corresponding radiation image is received when the plate rotating unit rotates the carrier plate to a corresponding rotation angle among the plurality of rotation angles; and The specific rotation angle and the corresponding rotation angle are respectively located in different plane quadrants.

8. The semiconductor detection device according to claim 7, wherein: An angle difference between the specific rotation angle and the corresponding rotation angle is a multiple of N degrees; and The value of N degrees is 90 or 180.

9. The semiconductor detection device according to claim 6, wherein: To ensure that at least one radiation image among the plurality of radiation images is set to belong to the plurality of available images, the number of the plurality of radiation images is greater than or equal to a minimum number.

10. The semiconductor detection device according to claim 9, wherein: When each angular difference between two adjacent rotation angles in the plurality of rotation angles is substantially the same, the minimum number is thirty.

11. The semiconductor detection device according to claim 6, wherein: The semiconductor workpiece further includes a substrate; The plurality of through-hole components are located on the substrate; and The plurality of available images are used to determine if a substrate defect is present in the substrate.

12. A semiconductor detection method for detecting a semiconductor workpiece by using a semiconductor detection device, the semiconductor detection method comprising: Receiving the semiconductor workpiece on a carrier plate, wherein the carrier plate is rotatable along a rotation axis at a plurality of rotation angles; Using a radiation light source of the semiconductor detection device, emitting a radiation light toward the semiconductor workpiece, wherein an optical axis of the radiation light is parallel to the rotation axis; The radiation light is detected by a radiation detector of the semiconductor detection device to receive a plurality of radiation images of a detected area in the semiconductor workpiece, wherein: The radiation source and the radiation detector are respectively disposed on two different sides of the carrier plate, and When the carrier plate is rotated to a specific rotation angle among the plurality of rotation angles, receiving a specific radiation image among the plurality of radiation images; and The multiple pixel values ​​are determined by weighted combination of the multiple radiation images to reconstruct the A sample image of the detected area.

13. The semiconductor detection method according to claim 12, wherein: When the carrier plate rotates at the plurality of rotation angles, a detection point in the detected area of ​​the semiconductor workpiece is correspondingly moved to a plurality of target positions; When the detection point is located at the plurality of target positions respectively, the detection point is detected to generate a plurality of point values, each of the plurality of point values ​​being included in one of the plurality of radiation images; By combining the plurality of point values ​​with a plurality of detection distances for weighted combination, a specific pixel value among the plurality of pixel values ​​in the sample image of the detected area is generated for the detection point; and The plurality of detection distances are each determined based on a corresponding one of the plurality of target positions.

14. The semiconductor detection method according to claim 13, wherein: The radiation source is disposed at a light source position; Each of the plurality of detection distances is the length of a corresponding one of the plurality of straight line segments; and The plurality of straight line segments are respectively connected from the light source position through the corresponding one of the plurality of target positions to the radiation detector.

15. The semiconductor detection method according to claim 12, wherein: The radiation source is movable along a first moving direction, wherein the first moving direction is parallel to the rotation axis; and The radiation detector is capable of moving along a second moving direction and / or a third moving direction, wherein the second moving direction is parallel to the rotation axis and the third moving direction is perpendicular to the rotation axis.

16. The semiconductor detection method according to claim 15, wherein: A magnification of the plurality of radiation images is determined based on a first vertical distance between the semiconductor workpiece and a radiation plane of the radiation light source and a second vertical distance between a detection plane of the radiation detector and the radiation plane of the radiation light source.

17. The semiconductor detection method according to claim 12, further comprising: Calculates the number of component images in a particular radiometric image, where: The semiconductor workpiece includes a plurality of through-hole components, The plurality of through-hole components in the inspected area of ​​the semiconductor workpiece are inspected to generating the plurality of component images among the plurality of radiation images; and When the number of the multiple component images in the specific radiation image is greater than or equal to a quantity threshold, the specific radiation image is set to be added to a plurality of available images, wherein the plurality of available images are used to determine whether there are through-hole defects in the multiple through-hole components in the detected area.

18. The semiconductor detection method according to claim 17, further comprising: When the specific radiation image is set to belong to the multiple available images, a corresponding radiation image in the multiple radiation images corresponding to the specific radiation image is added to the multiple available images, wherein: The corresponding radiation image is received when the carrier plate is rotated to a corresponding rotation angle among the plurality of rotation angles; and The specific rotation angle and the corresponding rotation angle are respectively located in different plane quadrants.

19. The semiconductor detection method according to claim 18, wherein: An angle difference between the specific rotation angle and the corresponding rotation angle is a multiple of N degrees; and The value of N degrees is 90 or 180.

20. The semiconductor detection method according to claim 17, wherein: To ensure that at least one usable image among the plurality of usable images is determined from the plurality of radiation images, the number of the plurality of radiation images is greater than or equal to a minimum number.

21. The semiconductor detection method according to claim 20, wherein: When each angular difference between two adjacent rotation angles in the plurality of rotation angles is substantially the same, the minimum number is thirty.

22. The semiconductor detection method according to claim 17, wherein: The semiconductor workpiece further includes a substrate; The plurality of through-hole components are located on the substrate; and The plurality of available images are used to determine if a substrate defect is present in the substrate.

23. A semiconductor detection device for detecting a semiconductor workpiece, comprising: a carrier plate configured to receive the semiconductor workpiece; a radiation source configured to emit a radiation light; A light source rotating unit is coupled to the radiation light source and configured to rotate the radiation light source along a The rotation axis rotates at a plurality of first rotation angles, wherein the rotation axis is parallel to an optical axis of the radiated light; a radiation detector configured to detect the radiation light to receive a plurality of radiation images of a detected area of ​​the semiconductor workpiece, wherein: The radiation source and the radiation detector are respectively disposed on two different sides of the carrier plate, and When the light source rotating unit rotates the radiation light source to a specific first rotation angle among the plurality of first rotation angles, the radiation detector receives a specific radiation image among the plurality of radiation images; and An image adjustment unit is coupled to the radiation detector and configured to determine a plurality of pixel values ​​by weighted combination of the plurality of radiation images to reconstruct a sample image of the detected area.

24. The semiconductor detection device according to claim 23, wherein: When the light source rotating unit rotates the radiation light source at the plurality of first rotation angles, the radiation light source is correspondingly moved to a plurality of light source positions; When the radiation light source is located at the plurality of light source positions, a detection point in the detection area of ​​the semiconductor workpiece is detected to generate a plurality of point values, each of which is included in one of the plurality of radiation images; By combining the plurality of point values ​​with a plurality of detection distances for weighted combination, a specific pixel value among the plurality of pixel values ​​in the sample image of the detected area is generated for the detection point; and The plurality of detection distances are each determined based on a corresponding one of the plurality of light source positions.

25. The semiconductor detection device according to claim 24, wherein: The detection point is located at a target position; Each of the plurality of detection distances is the length of a corresponding one of the plurality of straight line segments; and The plurality of straight line segments are respectively connected from the corresponding one of the plurality of light source positions through the target position to the radiation detector.

26. The semiconductor detection device according to claim 23, further comprising: a light source moving unit coupled to the radiation light source and configured to move the radiation light source along a first moving direction, wherein the first moving direction is parallel to the rotation axis; and A detection moving unit is coupled to the radiation detector and configured to move the radiation detector along a second moving direction and / or a third moving direction, wherein the second moving direction is parallel to the rotation axis, and the third moving direction is perpendicular to the rotation axis.

27. The semiconductor detection device according to claim 26, wherein: A light source distance between the semiconductor workpiece and a radiation plane of the radiation light source along the first moving direction is determined by the light source moving unit; A detection distance between a detection plane of the radiation detector and the radiation plane of the radiation light source along the first moving direction is determined by the light source moving unit and the detection moving unit; and The magnifications of the plurality of radiation images are determined based on the light source distance and the detection distance along the first moving direction.

28. The semiconductor detection device according to claim 23, wherein: The semiconductor workpiece includes a plurality of through-hole components; The plurality of through-hole components in the inspected area of ​​the semiconductor workpiece are inspected to generate a plurality of component images in the plurality of radiation images; When the number of the plurality of component images in the specific radiation image is greater than or equal to a number threshold, setting the specific radiation image to be added to the plurality of available images; and The plurality of available images are used to determine whether a via defect exists in the plurality of via components in the inspected area.

29. The semiconductor detection device according to claim 28, wherein: When the specific radiation image is set to belong to the multiple available images, a corresponding radiation image in the multiple radiation images corresponding to the specific radiation image is added to the multiple available images; The corresponding radiation image is received when the light source rotation unit rotates the radiation light source to a corresponding first rotation angle among the plurality of first rotation angles; and The specific first rotation angle and the corresponding first rotation angle are respectively located in different plane quadrants.

30. The semiconductor detection device according to claim 29, wherein: An angle difference between the specific first rotation angle and the corresponding first rotation angle is a multiple of N degrees; and The value of N degrees is 90 or 180.

31. The semiconductor detection device according to claim 28, wherein: To ensure that at least one radiation image among the plurality of radiation images is set to belong to the plurality of available images, the number of the plurality of radiation images is greater than or equal to a minimum number.

32. The semiconductor detection device according to claim 31, wherein: When each angular difference between two adjacent first rotation angles in the plurality of first rotation angles is substantially the same, the minimum number is thirty.

33. The semiconductor detection device according to claim 28, wherein: The semiconductor workpiece further includes a substrate; The plurality of through-hole components are located on the substrate; and The plurality of available images are used to determine if a substrate defect is present in the substrate.

34. The semiconductor detection device according to claim 23, further comprising: a detection rotation unit, coupled to the radiation detector and configured to rotate the radiation detector along the rotation axis at a plurality of second rotation angles, wherein: Each of the plurality of second rotation angles corresponds one-to-one to one of the plurality of first rotation angles, and When the light source rotating unit rotates the radiation light source to the specific first rotation angle among the plurality of first rotation angles, the detection rotating unit correspondingly rotates the radiation detector to a specific second rotation angle among the plurality of second rotation angles.

35. A semiconductor detection method for detecting a semiconductor workpiece by using a semiconductor detection device, the semiconductor detection method comprising: receiving the semiconductor workpiece on a carrier plate; A radiation light source of the semiconductor detection device emits a radiation light toward the semiconductor workpiece, wherein: The radiation source is rotatable along a rotation axis at a plurality of first rotation angles; and An optical axis of the radiation light is parallel to the rotation axis; The radiation light is detected by a radiation detector of the semiconductor detection device to receive a plurality of radiation images of a detected area in the semiconductor workpiece, wherein: The radiation source and the radiation detector are respectively disposed on two different sides of the carrier plate, and When the radiation light source is rotated to a specific first rotation angle among the plurality of first rotation angles, receiving a specific radiation image among the plurality of radiation images; and A plurality of pixel values ​​are determined by weighted combination of the plurality of radiation images to reconstruct a sample image of the detected area.

36. The semiconductor detection method according to claim 35, wherein: When the radiation light source rotates at the plurality of first rotation angles, the radiation light source is correspondingly moved to a plurality of light source positions; When the radiation light source is located at the plurality of light source positions, a detection point in the detection area of ​​the semiconductor workpiece is detected to generate a plurality of point values, each of which is included in one of the plurality of radiation images; By combining the plurality of point values ​​with a plurality of detection distances for weighted combination, a specific pixel value among the plurality of pixel values ​​in the sample image of the detected area is generated for the detection point; and The plurality of detection distances are each determined based on a corresponding one of the plurality of light source positions.

37. The semiconductor detection method according to claim 36, wherein: The detection point is located at a target position; Each of the plurality of detection distances is the length of a corresponding one of the plurality of straight line segments; and The plurality of straight line segments are respectively connected from the corresponding one of the plurality of light source positions through the target position to the radiation detector.

38. The semiconductor detection method according to claim 35, wherein: The radiation source is movable along a first moving direction, wherein the first moving direction is parallel to the rotation axis; and The radiation detector is capable of moving along a second moving direction and / or a third moving direction, wherein the second moving direction is parallel to the rotation axis and the third moving direction is perpendicular to the rotation axis.

39. The semiconductor detection method according to claim 38, wherein: A magnification of the plurality of radiation images is determined based on a first vertical distance between the semiconductor workpiece and a radiation plane of the radiation light source and a second vertical distance between a detection plane of the radiation detector and the radiation plane of the radiation light source.

40. The semiconductor detection method according to claim 35, further comprising: Calculates the number of component images in a particular radiometric image, where: The semiconductor workpiece includes a plurality of through-hole components, The plurality of through-hole components in the inspected area of ​​the semiconductor workpiece are inspected to generating the plurality of component images among the plurality of radiation images; and When the number of the multiple component images in the specific radiation image is greater than or equal to a quantity threshold, the specific radiation image is set to be added to a plurality of available images, wherein the plurality of available images are used to determine whether there are through-hole defects in the multiple through-hole components in the detected area.

41. The semiconductor detection method according to claim 40, further comprising: When the specific radiation image is set to belong to the multiple available images, a corresponding radiation image in the multiple radiation images corresponding to the specific radiation image is added to the multiple available images, wherein: The corresponding radiation image is received when the radiation source is rotated to a corresponding first rotation angle among the plurality of first rotation angles; and The specific first rotation angle and the corresponding first rotation angle are respectively located in different plane quadrants.

42. The semiconductor detection method according to claim 41, wherein: An angle difference between the specific first rotation angle and the corresponding first rotation angle is a multiple of N degrees; and The value of N degrees is 90 or 180.

43. The semiconductor detection method according to claim 40, wherein: To ensure that at least one usable image among the plurality of usable images is determined from the plurality of radiation images, the number of the plurality of radiation images is greater than or equal to a minimum number.

44. The semiconductor detection method according to claim 43, wherein: When each angular difference between two adjacent first rotation angles in the plurality of first rotation angles is substantially the same, the minimum number is thirty.

45. The semiconductor detection method according to claim 40, wherein: The semiconductor workpiece further includes a substrate; The plurality of through-hole components are located on the substrate; and The plurality of available images are used to determine if a substrate defect is present in the substrate.

46. ​​The semiconductor detection method according to claim 35, wherein: The radiation detector is capable of rotating along the rotation axis at a plurality of second rotation angles; Each of the plurality of second rotation angles corresponds one-to-one to one of the plurality of first rotation angles; and When the light source rotating unit rotates the radiation light source to a specific first rotation angle among the plurality of first rotation angles, the detection rotating unit correspondingly rotates the radiation detector to a specific second rotation angle among the plurality of second rotation angles.

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