Waste gas treatment apparatus

Abstract

The present invention relates to a waste gas treatment apparatus and, more specifically, to an integrated waste gas treatment apparatus having a reaction unit and a wet treatment unit. The present invention relates to a waste gas treatment apparatus for purifying waste gas discharged from at least one semiconductor equipment chamber, the waste gas treatment apparatus comprising: a reaction unit for purifying and treating waste gas; a wet processing unit disposed on the downstream side of the reaction unit; a valve device configured to selectively supply waste gas from each of the semiconductor equipment chambers to the reaction unit or the wet processing unit; and a controller communicatively coupled to the reaction unit and the valve device. The controller comprises: a memory in which instructions are stored; and a processor configured to execute the instructions. The instructions instruct the processor to perform the steps of: receiving an information signal regarding a step being performed in each of the semiconductor equipment chambers; selectively supplying waste gas to one of the reaction unit or the wet processing unit by controlling the valve device on the basis of the information signal regarding the step; and adjusting the amount of energy used by the reaction unit on the basis of the information signal regarding the step.

Description

waste gas treatment device

[0001] The present invention relates to a waste gas treatment device, and more particularly, to an integrated waste gas treatment device having a reaction unit and a wet treatment unit.

[0002] Etching, deposition, and other processes in the semiconductor manufacturing process involve placing a wafer in a chamber and supplying process gases to cause a reaction on the wafer.

[0003] Process gases used in semiconductor manufacturing are typically highly toxic, flammable, and corrosive. A significant portion of these process gases do not participate in the reaction and are discharged from the semiconductor equipment chamber unreacted.

[0004] If these process gases are discharged without a separate purification process, they can cause environmental pollution. Therefore, the waste gas exhaust line of the semiconductor equipment chamber is connected to a waste gas treatment device to purify the waste gas.

[0005] Fig. 1 is a conceptual diagram of a conventional integrated waste gas treatment device. As illustrated in Fig. 1, the conventional integrated waste gas treatment device (9) comprises a reaction section (2), a wet treatment section (3), and waste gas inlet ports (4). Waste gas discharged from a semiconductor equipment chamber (1) flows into the interior of the waste gas treatment device (5) through the waste gas inlet port (4) of the waste gas treatment device (9), and then passes through the reaction section (2) and the wet treatment section (3) in sequence.

[0006] The reaction unit (2) decomposes waste gas discharged from the waste gas treatment device (9). For example, the reaction unit (2) can combust the waste gas using a burner (6) that generates a flame (F).

[0007] In the wet treatment unit (3), water-soluble components contained in the waste gas that has passed through the reaction unit (2) are removed using water.

[0008] This conventional integrated waste gas treatment device (9) is configured to always pass through the reaction section (2) and then the wet treatment section (3), regardless of the type of waste gas. However, the waste gas discharged from the processor chamber (1) differs depending on the step of the process performed in the processor chamber (1), and some of the waste gas can be removed by wet treatment alone. Therefore, the conventional integrated waste gas treatment device (5) configured to necessarily pass through the operating reaction section (2) regardless of the type of waste gas has the problem that there may be energy waste.

[0009] [Prior Art Literature]

[0010] (Patent Document 1) Korean Patent No. 10-0967839

[0011] (Patent Document 2) Korean Patent Publication No. 10-2023-0100414

[0012] The present invention is intended to improve the above-described problems, and provides an integrated waste gas treatment device capable of reducing energy consumption by selectively supplying waste gas to one of a reaction section and a wet treatment section depending on the type of process step performed in a semiconductor equipment chamber and controlling the amount of energy consumed by the reaction section accordingly.

[0013] In order to achieve the above-described object, the present invention provides a waste gas treatment device for purifying waste gas discharged from at least one semiconductor equipment chamber, comprising: a reaction unit for purifying and treating the waste gas; a wet treatment unit disposed downstream of the reaction unit; a valve device configured to selectively supply waste gas from each of the semiconductor equipment chambers to the reaction unit or the wet treatment unit; and a controller communicatively coupled to the reaction unit and the valve device.

[0014] Here, the controller includes a memory having instructions stored therein, and a processor configured to execute the instructions, wherein the instructions cause the processor to perform the steps of: receiving an information signal regarding a step being performed in each of the semiconductor equipment chambers; controlling the valve device based on the information signal regarding the step to selectively supply waste gas to one of the reaction unit and the wet treatment unit; and controlling the amount of energy used by the reaction unit based on the information signal regarding the step.

[0015] In addition, the present invention provides a waste gas treatment device in which the step of controlling the amount of energy used in the reaction unit is a step of controlling the amount of energy used in the reaction unit based on the total amount of waste gas discharged from a plurality of semiconductor equipment chambers and introduced into the reaction unit.

[0016] In addition, the step of controlling the amount of energy used in the reaction unit provides a waste gas treatment device, which is a step of controlling the amount of energy used in the reaction unit based on the number of semiconductor equipment chambers that supply waste gas to the reaction unit.

[0017] In addition, the controller provides a waste gas treatment device that controls the valve device so that, in a step where waste gas requiring purification treatment in the reaction unit is discharged, the waste gas is supplied to the reaction unit, and in a step where waste gas requiring purification treatment in the reaction unit is not discharged, the controller controls the valve device so that the waste gas is directly supplied to the wet treatment unit.

[0018] Additionally, the information signal regarding the step provides a waste gas treatment device which is a current signal indicating the operating status of a vacuum pump of the semiconductor equipment chamber.

[0019] Additionally, the information signal regarding the step provides the waste gas treatment device with a process gas flow rate signal received from a flow controller that controls the flow of process gas supplied to the semiconductor equipment chamber.

[0020] In addition, the information signal regarding the step provides a waste gas treatment device which is an opening / closing signal of an electronic valve installed in a process gas pipe connected to an inlet port of the semiconductor equipment chamber.

[0021] In addition, the present invention further includes a gas detector for detecting waste gas discharged from the semiconductor equipment chamber, and provides a waste gas treatment device in which the information signal regarding the step is a waste gas detection signal received from the gas detector.

[0022] In addition, the present invention further includes a gas detector that detects waste gas discharged from the semiconductor equipment chamber and exhaust gas discharged from the waste gas treatment device, and provides an information signal regarding the step to the waste gas treatment device, which is a waste gas detection signal received from the gas detector.

[0023] In addition, the controller controls the valve device based on the waste gas detection signal, largely adjusts the amount of energy used by the reaction unit based on the waste gas detection signal, and provides a waste gas treatment device that finely adjusts the amount of energy used by the reaction unit based on the waste gas detection signal and the exhaust gas detection signal.

[0024] The waste gas treatment device according to the present invention selectively supplies waste gas to either the reaction section or the wet treatment section depending on the type of process step performed in the semiconductor equipment chamber, thereby controlling the amount of energy used by the reaction section. Therefore, when waste gas is supplied directly to the wet treatment section without passing through the reaction section, energy consumption can be reduced by reducing the amount of energy used by the reaction section.

[0025] Figure 1 is a conceptual diagram of a conventional integrated waste gas treatment device.

[0026] Figure 2 is a conceptual diagram of a waste gas treatment device according to one embodiment of the present invention.

[0027] Figure 3 is a conceptual diagram of the semiconductor equipment chamber of Figure 2.

[0028] Figure 4 is a flowchart for explaining the operation of a waste gas treatment device according to one embodiment of the present invention.

[0029] Figure 5 is a conceptual diagram of a waste gas treatment device according to another embodiment of the present invention.

[0030] Figure 6 is a conceptual diagram of a waste gas treatment device according to another embodiment of the present invention.

[0031] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. However, the embodiments of the present invention may be modified into various other forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. The embodiments of the present invention are provided to more completely explain the present invention to those with average knowledge in the art. Therefore, the shapes of elements in the drawings are exaggerated to emphasize a clearer description, and elements indicated by the same reference numerals in the drawings represent the same elements.

[0032] Fig. 2 is a conceptual diagram of a waste gas treatment device according to an embodiment of the present invention. As illustrated in Fig. 2, a waste gas treatment device (100) according to an embodiment of the present invention includes a reaction unit (110), a wet treatment unit (120), a valve device (130), and a controller (140).

[0033] The waste gas treatment device (100) treats waste gas from a semiconductor equipment chamber (10). The semiconductor equipment chamber (10) may be a chamber used for an etching process or a deposition process. In the present embodiment, the waste gas treatment device (100) is illustrated as treating waste gas from two semiconductor equipment chambers (10), but may be connected to one semiconductor equipment chamber (10) or may be connected to three or more semiconductor equipment chambers (10).

[0034] As illustrated in FIG. 3, the semiconductor equipment chamber (10) may include a chamber body (11) where a reaction or processing is performed, a flow controller (14) for controlling the flow of process gases supplied to the chamber body (11), an electronic valve (15) installed in a process gas pipe (12) connected to an inlet port of the chamber body (11), a vacuum pump (17) installed in a waste gas pipe (16) connected to an outlet port of the chamber body (11), and a semiconductor equipment chamber controller (19) for controlling and monitoring a process performed in the semiconductor equipment chamber (10) using sensors and control software.

[0035] Referring again to FIG. 2, the waste gas treatment device (100) will be described.

[0036] The reaction unit (110) serves to purify and process waste gas supplied from the semiconductor equipment chamber (10). The reaction unit (110) can purify and process waste gas in various ways. For example, the reaction unit (110) can combust waste gas using a burner (116) that generates a flame (F), as illustrated in FIG. 2. In addition, the reaction unit (110) can thermally decompose waste gas using a heater or plasma. Furthermore, a reaction unit (110) that uses a catalytic method, an adsorption method, or the like can also be used.

[0037] The wet treatment unit (120) is arranged downstream of the reaction unit (110). The waste gas passing through the reaction unit (110) or the powder generated in the reaction unit (110) are treated in the wet treatment unit (120). In addition, the waste gas supplied directly to the wet treatment unit (120) without passing through the reaction unit (110) is also treated. The wet treatment unit (120) can remove water-soluble gases in the waste gas and capture powder by spraying cleaning water through a spray nozzle. The cleaning water may be alkaline cleaning water having a pH of 10.5 to 11.0. In addition, a filler may be arranged in the wet treatment unit (120) to increase the contact area and time between the cleaning water and the waste gas.

[0038] The waste gas that has passed through the wet treatment unit (120) can be discharged through the exhaust gas discharge pipe (104). In addition, the contaminated cleaning water during the wet treatment process can be discharged through the drain at the bottom of the wet treatment unit (120) and then treated again. The treated cleaning water can be supplied again to the spray nozzle.

[0039] The valve device (130) is configured to selectively supply the waste gas flowing in the waste gas pipe (16) to the reaction unit (110) or the wet treatment unit (120). That is, the valve device (130) is configured to selectively connect the waste gas pipe (16) to one of the first gas line (132) and the second gas line (134). When the valve device (130) connects the waste gas pipe (16) and the first gas line (132), the connection between the waste gas pipe (16) and the second gas line (134) is blocked. Conversely, when the valve device (130) connects the waste gas pipe (16) and the second gas line (134), the connection between the waste gas pipe (16) and the first gas line (132) is blocked.

[0040] The valve device (130) may be a three-way valve. The three-way valve may be an actuator-driven valve such as an electric valve or an electromagnetic valve.

[0041] One end of the first gas line (132) is connected to the waste gas pipe (16) and the other end is connected to the input port (112) of the reaction unit (110). One end of the second gas line (134) is connected to the waste gas pipe (16) and the other end is connected to the input port (122) of the wet treatment unit (120).

[0042] When the valve device (130) connects the waste gas pipe (16) to the first gas line (132), the waste gas flows into the reaction unit (110). The waste gas flowing into the reaction unit (110) is purified and then wet-treated again in the wet treatment unit (120) located downstream of the reaction unit (110) before being discharged.

[0043] When the valve device (130) connects the waste gas pipe (16) to the second gas line (134), the waste gas flows directly into the wet treatment unit (120). The waste gas that flows directly into the wet treatment unit (120) is discharged after undergoing wet treatment without undergoing purification treatment in the reaction unit (110).

[0044] The controller (140) is communicatively coupled to the semiconductor equipment chamber (10), the reaction unit (110), and the valve device (130). The controller (140) receives an information signal from the semiconductor equipment chamber (10) regarding a step being performed in the semiconductor equipment chamber (10), and controls the amount of energy used by the reaction unit (110) and the operation of the valve device (130). The controller (140) and the semiconductor equipment chamber (10) can communicate via wired or wireless communication means. For example, communication can be performed using dry contact, serial communication using protocols such as RS232 and RS485, a local area network, TCP / IP protocol, SECS / GEM protocol, etc.

[0045] The controller (140) may include hardware such as a processor (142), memory (144), a fixed memory device (ROM), a storage device such as a hard disk or SSD, and a wired or wireless communication device. In addition, it includes programs such as firmware or software installed in a storage medium such as a memory, a fixed memory device, or a storage device.

[0046] A computing device such as an MCU (Micro controller unit), desktop computer, laptop computer, smartphone, or smart pad can be used as the controller (140).

[0047] The controller (140) can cause the processor (142) to perform the steps of FIG. 4 below through the program's commands.

[0048] Figure 4 is a flowchart for explaining the operation of a waste gas treatment device according to one embodiment of the present invention.

[0049] As illustrated in FIG. 4, the controller (140) causes the processor (142) to perform a step (S1) of receiving an information signal from the semiconductor equipment chamber (10) regarding a step being performed in the semiconductor equipment chamber (10).

[0050] In the semiconductor equipment chamber (10), multiple steps are performed using different types of process gases.

[0051] For example, in the case of a plasma etching process, an etching cycle consisting of a cleaning step, an etching step, and a purge step may be repeatedly performed. At this time, in the cleaning step, for example, perfluorinated compounds such as NF3 and CF4 that require purification treatment in the reaction unit (110) may be supplied as process gases into the chamber body (11). And in the etching step, for example, HF and HBr that do not require purification treatment in the reaction unit (110) may be supplied as process gases.

[0052] And in the case of a deposition process, a deposition cycle including a cleaning step, a deposition step, a purge step, etc. may be repeatedly performed. At this time, in the cleaning step, for example, perfluorinated compounds such as NF3 and CF4 that require purification treatment in the reaction unit (110) may be supplied as process gas into the chamber, and in the deposition step, process gas that does not require purification treatment in the reaction unit (110) may be supplied.

[0053] In this step, information signals regarding steps being performed within the semiconductor equipment chamber (10) are received. The information signals regarding steps are information signals that can distinguish whether a process requiring purification treatment in the reaction unit (110) is an unnecessary process.

[0054] For example, a process signal that can specify a process currently being performed in a semiconductor equipment chamber (10) can be directly received from a semiconductor equipment chamber controller (19). In addition, an operation signal regarding the start and completion of the entire process can also be received.

[0055] In addition, information signals regarding process gases flowing into the chamber body (11) can be obtained from electronic valves (15) or flow controllers (14) installed in process gas pipes (12) connected to input ports of the semiconductor equipment chamber (10). For example, if it is confirmed that CF4 is supplied into the chamber body (11) through the electronic valve (15) or flow controller (14) of the process gas pipe (12) connected to the input port through which CF4 is supplied, it can be determined that the process requires purification treatment in the reaction unit (110). Although only three process gas pipes (12) are illustrated in FIG. 3, the number of process gas pipes (12) may increase further depending on the number of process gases used.

[0056] In addition, the current signal of the vacuum pump (17) of the semiconductor equipment chamber (10) can also be received. The current signal of the vacuum pump (17) can generally be monitored using a current measuring device such as an amp meter or an oscilloscope connected to the power circuit of the vacuum pump (17). Even if the power applied to the vacuum pump (17) is the same, the current signal may vary depending on the type of gas being discharged. This is because the molecular weight varies depending on the type of gas. Gases with a large molecular weight are more difficult to remove from the vacuum pump (17) than gases with a small molecular weight. Even if the power applied to the vacuum pump (17) is the same, the current signal may be larger when a gas with a large molecular weight is discharged. Therefore, the current signal of the vacuum pump (17) may vary depending on the type of step being performed, and the current signal of the vacuum pump (17) can be utilized as an information signal regarding the step.

[0057] Next, the controller (140) causes the processor (142) to perform a step (S2) of controlling the valve device (130) based on the information signal regarding the step to selectively supply the waste gas to one of the reaction unit (110) and the wet treatment unit (120).

[0058] In this step, the valve device (130) corresponding to the semiconductor equipment chamber (10) is controlled based on the information signal regarding the step received from each semiconductor equipment chamber (10). The same step may be performed in multiple semiconductor equipment chambers (10), or different steps may be performed.

[0059] If the step performed in the semiconductor equipment chamber (10) is a step for discharging waste gas that does not require purification treatment in the reaction unit (110), the corresponding valve device (130) is controlled so that the waste gas is directly supplied to the wet treatment unit (120) at the time of discharge of the waste gas in the corresponding step. That is, the waste gas pipe (16) is connected to the second gas line (134). Accordingly, waste gases that do not require purification treatment in the reaction unit (110) are discharged after passing through only the wet treatment unit (120).

[0060] If the step performed in the semiconductor equipment chamber (10) is a step of discharging waste gas that requires purification treatment in the reaction unit (110), the corresponding valve device (130) is controlled so that the waste gas is supplied to the reaction unit (110) in accordance with the waste gas discharge timing of the corresponding step. That is, the waste gas pipe (16) is connected to the first gas line (132). Accordingly, waste gases that require purification treatment in the reaction unit (110) are discharged after passing through the reaction unit (110) and the wet treatment unit (120).

[0061] If the steps performed in the semiconductor equipment chambers (10) are different, the gas lines connected to the waste gas pipe (16) by the valve devices (130) may be different. For example, in the embodiment shown in FIG. 2, if the left semiconductor equipment chamber (10) discharges waste gas that requires purification treatment in the reaction unit (110), and the right semiconductor equipment chamber (10) discharges waste gas that does not require purification treatment in the reaction unit (110), the left valve device (130) may connect the waste gas pipe (16) to the first gas line (132), and the right valve device (130) may connect the waste gas pipe (16) to the second gas line (134).

[0062] Additionally, the controller (140) causes the processor (142) to perform a step (S3) of controlling the amount of energy used by the reaction unit (110) based on the information signal regarding the step. This step is performed in synchronization with the step S2.

[0063] In this step, the energy usage level of the reaction unit (110) is adjusted based on the received step-related information signal. For example, the energy usage level can be adjusted in three stages: low, medium, and high energy, or in two stages: low and high energy. Of course, the energy usage level can be adjusted in more detail.

[0064] When a burner (116) is used as a heat source for the reaction unit (110), the low energy amount may refer to the minimum flame state that can prevent the flame from going out. When a heater or plasma generator is used, the low energy amount may refer to the minimum amount of energy used that can quickly transition to a state where purification processing in the reaction unit (110) is possible, such as a medium-energy or high-energy stage.

[0065] In this step, the amount of energy used by the reaction unit (110) can be controlled based on the total amount of waste gas flowing into the reaction unit (110). That is, the amount of energy used by the reaction unit can be controlled based on the number of semiconductor equipment chambers (10) that supply waste gas to the reaction unit (110).

[0066] Table 1 below is a table explaining a method for controlling the amount of energy used by the reaction unit. Table 1 shows the amount of energy used by the reaction unit when waste gas is introduced from two processor chambers (10), as in the embodiment illustrated in Fig. 2.

[0067] Whether perfluorinated compounds are included? Reaction section energy usage Waste gas 1 Waste gas 2 ○○ High energy ○× Medium energy ×○ Medium energy ×× Low energy

[0068] As summarized in Table 1, since all of the received steps are steps that discharge waste gases (e.g., perfluorinated compounds) that require purification treatment in the reaction unit (110), if all of the waste gases are introduced into the reaction unit (110), the amount of energy used in the reaction unit (110) can be adjusted to a high amount of energy according to the timing at which the waste gases of the corresponding steps are discharged.

[0069] In addition, since all of the steps received from the two processor chambers (10) are steps that discharge waste gases that do not require purification treatment in the reaction unit (110), if all of the waste gases are introduced into the wet treatment unit (120), the amount of energy used in the reaction unit (110) can be adjusted to a low amount of energy according to the timing at which the waste gases of the corresponding steps are discharged.

[0070] In addition, if one of the steps received from the two processor chambers (10) is a step for discharging waste gas that requires purification treatment in the reaction unit (110), and the other is a step for discharging waste gas that does not require purification treatment in the reaction unit (110), the amount of energy used in the reaction unit (110) can be adjusted to a medium amount of energy according to the timing at which the waste gas of the corresponding steps is discharged.

[0071] In this way, when a step for discharging waste gas that is unnecessary for purification treatment in the reaction unit (110) is included, the amount of energy used in the reaction unit (110) can be reduced, thereby significantly reducing the energy consumed in the reaction unit (110).

[0072] Figure 5 is a conceptual diagram of a waste gas treatment device according to another embodiment of the present invention.

[0073] The waste gas treatment device (200) illustrated in FIG. 5 further includes a gas detector (250) that detects waste gas discharged from a semiconductor equipment chamber (10), and differs from the embodiment illustrated in FIG. 2 only in that the information signal regarding the step is a waste gas detection signal received from the gas detector (250). Therefore, the remaining components are assigned the same reference numerals and descriptions are omitted.

[0074] A gas detector (250) is connected to a waste gas pipe (16). Various types of gas detectors can be used as the gas detector (250), such as a quadruple mass spectrometer (QMS), an infrared gas analyzer, a semiconductor gas detector, and an electrochemical gas detector. The gas detector (250) can measure the type and concentration of waste gas.

[0075] In this embodiment, the controller (240) controls the corresponding valve device (130) based on the waste gas detection signal from each gas detector (250) to selectively supply waste gas to one of the reaction unit (110) and the wet treatment unit (120).

[0076] And, based on the waste gas detection signals from the gas detectors (250), the amount of energy used in the reaction unit (110) is also controlled. For example, if a perfluorinated compound is detected from both gas detectors (250), it can be controlled to a high energy amount, if a perfluorinated compound is detected from only one gas detector (250), it can be controlled to a medium energy amount, and if a perfluorinated compound is not detected from both gas detectors (250), it can be controlled to a low energy amount.

[0077] Figure 6 is a conceptual diagram of a waste gas treatment device according to another embodiment of the present invention.

[0078] The waste gas treatment device (300) illustrated in FIG. 6 differs from the embodiment illustrated in FIG. 5 only in that the gas detector (350) detects not only waste gas but also exhaust gas, and the step-related information signals are waste gas detection signals and exhaust gas detection signals received from the gas detector (350). Therefore, the remaining components are assigned the same reference numerals and their descriptions are omitted.

[0079] In this embodiment, a gas detector (350) is connected to a waste gas pipe (16) and an exhaust gas discharge pipe (104). The gas detector (350) can measure the type and concentration of waste gas and exhaust gas. Although FIG. 6 illustrates measuring both waste gas and exhaust gas using a single gas detector (350), two different gas detectors can also be used to measure waste gas and exhaust gas separately.

[0080] In this embodiment, the controller (340) controls the corresponding valve device (130) based on the waste gas detection signal from each gas detector (350) to selectively supply waste gas to one of the reaction unit (110) and the wet treatment unit (120). In addition, based on the waste gas detection signals from the gas detectors (250), the amount of energy used by the reaction unit (110) can also be significantly adjusted. For example, the amount of energy used can be adjusted to a high energy amount, a medium energy amount, or a low energy amount.

[0081] In addition, by comparing the waste gas detection signal with the exhaust gas detection signal, the amount of energy used by the reaction unit (110) can be finely adjusted. For example, if a small amount of waste gas requiring purification treatment in the reaction unit (110) is detected in the exhaust gas, the amount of energy used by the reaction unit (110) can be slightly increased. For example, the amount of energy used, which is adjusted to a medium energy amount, can be finely adjusted to an amount of energy used between a high energy amount and a medium energy amount.

[0082] In addition, if no waste gas requiring purification treatment in the reaction unit (110) is detected in the exhaust gas, the minimum amount of energy used at which no waste gas is detected can be found by gradually lowering the amount of energy used in the reaction unit (110).

[0083] The embodiments described above merely describe preferred embodiments of the present invention, and the scope of the present invention is not limited to the described embodiments, and various changes, modifications, or substitutions may be made by those skilled in the art within the technical spirit and scope of the claims of the present invention, and it should be understood that such embodiments fall within the scope of the present invention.

[0084] [Explanation of symbols]

[0085] 100, 200, 300: Waste gas treatment device

[0086] 110: Reaction section

[0087] 120: Wet treatment unit

[0088] 130: Valve device

[0089] 140, 240, 340: Controller

[0090] 250, 350: Gas detector

Claims

1. A waste gas treatment device for purifying waste gas discharged from at least one semiconductor equipment chamber, A reaction unit that purifies waste gas, A wet treatment unit is placed on the downstream side of the above reaction unit and is connected to the above reaction unit, and into which the waste gas purified in the above reaction unit flows; A valve device configured to selectively supply waste gas from each of the semiconductor equipment chambers to the reaction unit or the wet treatment unit, A controller communicatively coupled to the above reaction unit and the above valve device, The controller includes a memory having instructions stored therein and a processor configured to execute the instructions, wherein the instructions cause the processor to: A step of receiving information signals regarding steps performed in each of the above semiconductor equipment chambers, A step of controlling the valve device based on the information signal regarding the above step to selectively supply waste gas to one of the reaction unit and the wet treatment unit, A waste gas treatment device that performs a step of controlling the amount of energy used in the reaction section based on an information signal regarding the above step.

2. In paragraph 1, The step of controlling the amount of energy used in the above reaction section is: A waste gas treatment device that controls the amount of energy used in the reaction unit based on the total amount of waste gas discharged from a plurality of semiconductor equipment chambers and introduced into the reaction unit.

3. In paragraph 1, The step of controlling the amount of energy used in the above reaction section is: A waste gas treatment device, which is a step for controlling the amount of energy used in the reaction unit based on the number of semiconductor equipment chambers that supply waste gas to the reaction unit.

4. In paragraph 1, The above controller, In the step where waste gas requiring purification treatment is discharged from the above reaction unit, the valve device is controlled so that the waste gas is supplied to the above reaction unit. A waste gas treatment device that controls the valve device so that, in a step where waste gas requiring purification treatment in the above reaction section is not discharged, the waste gas is directly supplied to the wet treatment section.

5. In paragraph 1, The information signal regarding the above step is a current signal of a current measuring device connected to a power circuit of a vacuum pump installed in a waste gas pipe connected to an outlet port of the semiconductor equipment chamber, and the current signal is a waste gas treatment device that changes according to the type of waste gas discharged through the vacuum pump.

6. In paragraph 1, The information signal regarding the above step is a waste gas treatment device which is a process gas flow rate signal received from a flow controller that controls the flow of process gas supplied to the semiconductor equipment chamber.

7. In paragraph 1, The information signal regarding the above step is a waste gas treatment device that is an opening / closing signal of an electronic valve installed in a process gas pipe connected to the inlet port of the semiconductor equipment chamber.

8. In paragraph 1, It further includes a gas detector for detecting waste gas discharged from the semiconductor equipment chamber, A waste gas treatment device in which the information signal regarding the above step is a waste gas detection signal received from the above gas detector.

9. In paragraph 1, It further includes a gas detector that detects waste gas discharged from the semiconductor equipment chamber and exhaust gas discharged from the waste gas treatment device. The information signal regarding the above step is a waste gas detection signal received from the gas detector and a waste gas treatment device which is an exhaust gas detection signal.

10. In paragraph 9, The above controller, Based on the above-mentioned waste gas detection signal, the valve device is controlled, Based on the above waste gas detection signal, the amount of energy used in the reaction unit is greatly adjusted, A waste gas treatment device that finely adjusts the amount of energy used in the reaction unit based on the waste gas detection signal and the exhaust gas detection signal.

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