Radio frequency power amplifier, radio frequency front-end module, and electronic device

Abstract

Provided in the present application are a radio frequency power amplifier, a radio frequency front-end module, and an electronic device. By configuring the distance between a first part of wiring and a first radio frequency amplification chip to be smaller than the distance between a first input end of a primary coil and the first part of wiring, and configuring the distance between the first part of wiring and the first radio frequency amplification chip to be smaller than the distance between a second input end of the primary coil and the first part of wiring, the overall degree of integration of the radio frequency power amplifier is better ensured.

Description

RF power amplifiers, RF front-end modules and electronic devices

[0001] This application is based on the Chinese application number 202311180568.1 filed on September 13, 2023, entitled "RF power amplifier, RF front-end module and electronic device", and claims priority. Technical Field

[0002] The present application relates to the field of radio frequency technology, and in particular to a radio frequency power amplifier, a radio frequency front-end module and an electronic device. Background Art

[0003] With the continuous development of semiconductor technology, the requirements for the functions and performance of electronic devices are also increasing. For mobile devices, lightness and portability are the requirements that users attach great importance to. Therefore, the requirements for the integration of various modules in mobile devices are also getting higher and higher. For example, for RF front-end modules, with the increasing popularity of fifth-generation mobile communication technology (5G), the frequency bands that communication equipment needs to support have increased significantly. However, the requirements based on integration have posed a great challenge to the design of RF front-ends.

[0004] Application Contents

[0005] The purpose of this application is to provide a radio frequency power amplifier, a radio frequency front-end module and an electronic device that can improve the overall integration.

[0006] In a first aspect, the present application provides a radio frequency power amplifier, comprising:

[0007] substrate;

[0008] A first radio frequency amplifier chip is provided on the substrate and includes a chip signal output terminal;

[0009] an output transformer, disposed on the substrate, comprising a primary coil and a secondary coil coupled to each other;

[0010] The primary coil includes a first input terminal, a second input terminal, and a primary signal line connecting the first input terminal and the second input terminal, and the chip signal output terminal is connected to the primary coil;

[0011] The primary signal trace includes a first portion of the trace disposed adjacent to the first RF amplifier chip, and the first input end of the primary coil and the second input end of the primary coil are disposed away from the first RF amplifier chip relative to the first portion of the trace.

[0012] Furthermore, the distance between the first portion of the routing and the first RF amplifier chip is smaller than the distance between the first input end of the primary coil and the first portion of the routing, and the distance between the first portion of the routing and the first RF amplifier chip is smaller than the distance between the second input end of the primary coil and the first portion of the routing.

[0013] Furthermore, the radio frequency power amplifier further includes:

[0014] A passive unit network is connected between the chip signal output terminal and the primary coil of the output transformer, and at least one element in the passive unit network is arranged between the first input terminal and the first radio frequency amplifier chip.

[0015] Furthermore, the passive unit network includes a capacitive element and / or an inductive element, and the capacitive element and / or the inductive element are surrounded by the primary signal trace.

[0016] Furthermore, the secondary coil includes a first output end and a second output end, and the first output end and the second output end are arranged relative to the first portion of the wiring and away from the first radio frequency amplifier chip.

[0017] Furthermore, the distance between the first input terminal and the first RF amplifier chip is smaller than the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or the distance between the second input terminal and the first RF amplifier chip is smaller than the distance between the first output terminal or the second output terminal and the first RF amplifier chip.

[0018] Further, the distance between the first input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or the distance between the second input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip.

[0019] Furthermore, the passive unit network includes a third signal routing arranged in the substrate, the third signal routing includes a second portion of routing arranged in the first wiring layer of the substrate and a third portion of routing arranged in the second wiring layer of the substrate, and the second portion of routing and the third portion of routing overlap in the longitudinal projection.

[0020] In a second aspect of the present application, a radio frequency power amplifier is provided, comprising:

[0021] substrate;

[0022] A first radio frequency amplifier chip is provided on the substrate and includes a first differential output terminal and a second differential output terminal;

[0023] an output transformer, disposed on the substrate, comprising a primary coil and a secondary coil coupled to each other;

[0024] The primary coil includes a first input terminal, a second input terminal, and a primary signal trace connecting the first input terminal and the second input terminal, the first differential output terminal is connected to the first input terminal, and the second differential output terminal is connected to the second input terminal;

[0025] The primary signal trace includes a first portion of the trace disposed adjacent to the first RF amplifier chip, and the first input end of the primary coil and the second input end of the primary coil are disposed away from the first RF amplifier chip relative to the first portion of the trace.

[0026] Furthermore, the radio frequency power amplifier further includes:

[0027] a first signal trace, one end of the first signal trace being connected to the first differential output end, and the other end of the first signal trace being connected to the first input end of the primary coil;

[0028] A second signal line, one end of the second signal line is connected to the second differential output end, and the other end of the first signal line is connected to the second input end of the primary coil.

[0029] Furthermore, the first signal trace is provided in at least one wiring layer in the substrate, and the second signal trace is provided in at least one wiring layer in the substrate.

[0030] Furthermore, the first signal line and the first portion of the line overlap in a longitudinal projection, and / or the second signal line and the first portion of the line overlap in a longitudinal projection.

[0031] Furthermore, the radio frequency power amplifier further includes:

[0032] a third signal trace provided in the substrate, connected between the first input end of the primary coil and the second input end of the primary coil;

[0033] There is at least one first overlapping portion between the third signal line and the first signal line in a longitudinal projection, and / or there is at least one second overlapping portion between the third signal line and the second signal line in a longitudinal projection.

[0034] Furthermore, the third signal trace includes a second portion of traces arranged on the first wiring layer of the substrate and a third portion of traces arranged on the second wiring layer of the substrate, and the second portion of traces and the third portion of traces overlap in a longitudinal projection.

[0035] Furthermore, the RF power amplifier also includes a first capacitor arranged on the substrate, one end of the first capacitor is connected to the third signal trace, and the other end of the first capacitor is connected to the first input end of the primary coil or the second input end of the primary coil.

[0036] Furthermore, the first portion of routing includes a first sub-routing arranged in the first wiring layer of the substrate and a second sub-routing arranged in the third wiring layer of the substrate, and the first signal routing, the first sub-routing and the second sub-routing all overlap in the longitudinal projection.

[0037] Furthermore, the first portion of the routing includes a first sub-routing arranged in the first wiring layer of the substrate and a second sub-routing arranged in the third wiring layer of the substrate, the first sub-routing and the second sub-routing are connected through a first through-hole, and the first through-hole is located between the first signal routing and the second signal routing.

[0038] Furthermore, the secondary coil includes a first output end, a second output end, and a secondary signal trace connecting the first output end and the second output end, and the primary signal trace and the secondary signal trace are arranged in the same wiring layer of the substrate.

[0039] Furthermore, the secondary coil includes a first output end, a second output end and a secondary signal trace connecting the first output end and the second output end, the substrate includes a first wiring layer, a second wiring layer and a third wiring layer arranged in sequence, the primary signal trace is arranged in the first wiring layer and the third wiring layer, the secondary signal trace is arranged in the second wiring layer, and the primary signal trace and the secondary signal trace are longitudinally coupled.

[0040] Furthermore, the inductance of the first signal line is smaller than the inductance of the primary signal line.

[0041] In a third aspect of the present application, a radio frequency front-end module is provided, comprising the above-mentioned radio frequency power amplifier.

[0042] In a third aspect of the present application, an electronic device is provided, comprising the above-mentioned RF front-end module.

[0043] In the RF power amplifier, RF front-end module, and electronic device provided in the embodiments of the present application, by setting the distance between the first portion of the routing in the primary coil and the first RF amplifier chip to be smaller than the distance between the first input end of the primary coil and the first portion of the routing, and the distance between the first portion of the routing in the primary coil and the first RF amplifier chip to be smaller than the distance between the second input end of the primary coil and the first portion of the routing, the overall integration of the RF power amplifier is better ensured. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] FIG1 is a schematic diagram of a radio frequency power amplifier provided in one embodiment of the present application;

[0045] FIG2 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0046] FIG3 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0047] FIG4 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0048] FIG5 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0049] FIG6 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0050] FIG7 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0051] FIG8 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0052] FIG9 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0053] FIG10 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0054] FIG11 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0055] FIG12 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0056] FIG13 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0057] FIG14 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0058] FIG15 is a schematic diagram of a radio frequency front end provided by an embodiment of the present application;

[0059] FIG16 is a simulation diagram of a radio frequency power amplifier provided in an embodiment of the present application. DETAILED DESCRIPTION

[0060] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0061] It should be understood that the present application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided to make the disclosure thorough and complete and to fully convey the scope of the present application to those skilled in the art. In the drawings, the dimensions and relative dimensions of layers and regions may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0062] It should be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent to, connected to, or coupled to the other element or layer, or there can be intervening elements or layers. Conversely, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or portions, these elements, components, regions, layers, and / or portions should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or portion from another element, component, region, layer, or portion. Thus, a first element, component, region, layer, or portion discussed below may be represented as a second element, component, region, layer, or portion without departing from the teachings of the present application.

[0063] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," etc., may be used herein for convenience of description to describe the relationship of one element or feature shown in the figures to other elements or features. It should be understood that the spatially relative terms are intended to include different orientations of the device in use and operation in addition to the orientations shown in the figures. For example, if the device in the drawings is flipped, then the elements or features described as "under" or "beneath" or "beneath" the other elements will be oriented as "over" the other elements or features. Thus, the exemplary terms "under" and "under" may include both the upper and lower orientations. The device may be oriented otherwise (rotated 90 degrees or in other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0064] The purpose of the terms used herein is only to describe specific embodiments and is not intended to limit the present application. When used herein, the singular forms "a", "an", and " / the" are intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "comprising" and / or "including", when used in this specification, identify the presence of features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0065] In order to fully understand the present application, detailed structures and steps will be presented in the following description to illustrate the technical solutions proposed by the present application. The preferred embodiments of the present application are described in detail below. However, in addition to these detailed descriptions, the present application may also have other implementation methods.

[0066] At least one embodiment of the present application provides a radio frequency power amplifier, including:

[0067] substrate;

[0068] A first radio frequency amplifier chip is provided on the substrate and includes a chip signal output terminal;

[0069] an output transformer, disposed on the substrate, comprising a primary coil and a secondary coil coupled to each other;

[0070] The primary coil includes a first input terminal, a second input terminal, and a primary signal line connecting the first input terminal and the second input terminal, and the chip signal output terminal is connected to the primary coil;

[0071] The primary signal trace includes a first portion of the trace disposed adjacent to the first RF amplifier chip, and the first input end of the primary coil and the second input end of the primary coil are disposed away from the first RF amplifier chip relative to the first portion of the trace.

[0072] This embodiment includes a substrate, a first RF amplifier chip, and an output transformer disposed on the substrate. For example, as shown in FIG1 , the first RF amplifier chip 10 and the output transformer are disposed on substrate 100. The first RF amplifier chip 10 is configured to amplify RF signals and output them through a chip signal output terminal. It is understood that the number of chip signal output terminals is not limited and can be one, two, three, four, or the like.

[0073] In at least one embodiment, as shown in FIG1 , the chip signal output terminal includes a single-ended signal output terminal A, and the single-ended signal output terminal A is connected to the first input terminal or the second input terminal of the primary coil. Optionally, the single-ended signal output terminal A is connected to the first input terminal of the primary coil, and the second input terminal of the primary coil is configured to be grounded or configured to be connected to the power supply terminal. Optionally, the first RF amplifier chip includes a third power amplifier transistor, and the output terminal of the third power amplifier transistor is connected to the single-ended signal output terminal A. It can be understood that the third power amplifier transistor can be implemented as a single amplifier transistor, or it can be formed by connecting two or more amplifier transistors in series or in parallel, or other conventional implementation methods in the art are adopted, and are not limited here. In at least one implementation, the third power amplifier transistor can be a bipolar junction transistor (BJT), or a field effect transistor (FET), etc. In at least one implementation, the third power amplifier transistor is a heterojunction transistor (HBT). Exemplarily, the third power amplifier transistor is a heterojunction transistor implemented using a GaAs process. In at least one implementation, the third power amplifier transistor is an NPN transistor. It can be understood that the third power amplifier transistor can be any amplifier stage in the RF power amplifier. For example, when the RF power amplifier includes a driving stage and an output stage, the third power amplifier transistor in this embodiment can be any amplifier stage (i.e., a driving stage or an output stage) in the above-mentioned RF power amplifier.

[0074] In at least one embodiment, as shown in FIG2 , the chip signal output terminal includes a first differential output terminal B and a second differential output terminal C, the first differential output terminal B is connected to the first input terminal, and the second differential output terminal C is connected to the second input terminal. Optionally, the first RF amplifier chip includes a differential power amplifier unit, and the differential power amplifier unit may include two differential amplification paths. Taking FIG2 as an example, the differential power amplifier unit includes a first power amplifier transistor and a second power amplifier transistor. The output terminal of the first power amplifier transistor is connected to the first differential output terminal B, and the output terminal of the second power amplifier transistor is connected to the second differential output terminal C. It is understandable that the first power amplifier transistor and the second power amplifier transistor can both be implemented as a single amplifier transistor, or can be formed by two or more amplifier transistors connected in series or in parallel, or adopt other conventional implementation methods in the art, which are not limited here. In at least one implementation, the first power amplifier transistor can be a bipolar junction transistor (BJT), or a field effect transistor (FET), etc. The second power amplifier transistor can be a bipolar junction transistor (BJT), or a field effect transistor (FET), etc. In at least one implementation, the first power amplifier transistor is a heterojunction transistor (HBT), and the second power amplifier transistor is a heterojunction transistor (HBT). Exemplarily, the first power amplifier transistor is a heterojunction transistor implemented using a GaAs process, and the second power amplifier transistor is a heterojunction transistor implemented using a GaAs process. In at least one implementation, the first power amplifier transistor is an NPN transistor, and the second power amplifier transistor is an NPN transistor.

[0075] It can be understood that the differential power amplification unit can be any amplification stage in the RF power amplifier. For example, when the RF power amplifier includes a driving stage and an output stage, the differential power amplification unit in this embodiment can be any amplification stage (i.e., a driving stage or an output stage) in the above-mentioned RF power amplifier.

[0076] The first power amplifier transistor is configured to receive an input first RF signal through a first input path and output it through a first output path after amplification, and the first RF signal is a low-band RF signal. The second power amplifier transistor is configured to receive an input second RF signal through a second input path and output it through a second output path after amplification, and the second RF signal is a low-band RF signal. That is, the first power amplifier transistor and the second power amplifier transistor respectively serve as amplifier transistors in two differential amplification paths of the differential power amplifier unit. It can be understood that the first RF signal and the second RF signal are differential signals. Optionally, the first RF signal and the second RF signal can be two differential signals converted from an RF input signal through a power divider, or can be two differential signals after amplification by two pre-amplifier stages.

[0077] The output transformer is provided on the substrate 100 and includes a primary coil 21 and a secondary coil 22 coupled to each other. The primary coil 21 includes a first input terminal 211, a second input terminal 212, and a primary signal trace 213 connecting the first input terminal and the second input terminal.

[0078] As shown in Figures 1 and 8 , the primary signal trace includes a first portion of traces 2131 disposed adjacent to the first RF amplifier chip. It is understood that the first portion of traces 2131 may be any portion of the primary signal trace. The first input terminal 211 and the second input terminal 212 of the primary coil 21 are disposed away from the first RF amplifier chip relative to the first portion of traces 2131. Taking Figure 1 as an example, the first input terminal 211 and the second input terminal 212 of the primary coil 21 are disposed to the right of the first portion of traces 2131, and the first RF amplifier chip 10 is disposed to the left of most of the first portion of traces 2131.

[0079] It is understandable that the first input terminal 211 and the second input terminal 212 of the primary coil 21 can be set on the right side of the first portion of the wiring 2131, and are not limited to the position in Figure 1. For example, the first input terminal can be set in an area in the upper right, lower right or right side of the first portion of the wiring 2131. The second input terminal can be set in an area in the upper right, lower right or right side of the first portion of the wiring 2131. It is understandable that the first input terminal and the second input terminal can be set in the same area in the upper right, lower right or right side mentioned above, or they can be in different areas respectively. It is understandable that the right and right side mentioned in this embodiment are the right and right sides relative to the first RF amplifier chip and / or the first portion of the wiring.

[0080] In at least one embodiment, the first portion of traces 2131 is the trace closest to the first RF amplifier chip among the primary signal traces. In at least one embodiment, the first portion of traces 2131 is arranged approximately parallel to a side edge of the first RF amplifier chip.

[0081] In this embodiment, the first input terminal of the primary coil and the second input terminal of the primary coil are arranged away from the first RF amplifier chip relative to the first portion of wiring. This provides sufficient space / distance between the chip signal output terminal and the two input terminals of the primary coil. This also allows for sufficient space / distance for routing or components between the chip signal output terminal and the primary coil, eliminating the need for additional space and improving the overall integration of the RF power amplifier.

[0082] In at least one embodiment, the RF power amplifier can be used to support amplification of RF signals in the 5G frequency band, such as at least one of the N41, N77, and N79 frequency bands.

[0083] In at least one embodiment, the distance between the first portion of the routing and the first RF amplifier chip is smaller than the distance between the first input end of the primary coil and the first portion of the routing, and the distance between the first portion of the routing and the first RF amplifier chip is smaller than the distance between the second input end of the primary coil and the first portion of the routing.

[0084] In this embodiment, by setting the distance between the first part of the routing and the first RF amplifier chip to be smaller than the distance between the first input end of the primary coil and the first part of the routing, and the distance between the first part of the routing and the first RF amplifier chip to be smaller than the distance between the second input end of the primary coil and the first part of the routing, the overall integration of the RF power amplifier is better ensured.

[0085] In at least one embodiment, the distance between the first portion of the routing and the first RF amplifier chip is less than half the distance between the first input end of the primary coil and the first portion of the routing, and the distance between the first portion of the routing and the first RF amplifier chip is less than half the distance between the second input end of the primary coil and the first portion of the routing.

[0086] In at least one embodiment, the radio frequency power amplifier further comprises:

[0087] A passive unit network is connected between the chip signal output terminal and the primary coil of the output transformer, and at least one element in the passive unit network is arranged between the first input terminal and the first radio frequency amplifier chip.

[0088] In this embodiment, the passive unit network is composed of at least one passive element. Optionally, the passive unit network includes at least one of an inductive element, a capacitive element, or a resistive element. Optionally, the passive unit network can be an output matching network of an RF power amplifier or a portion of an output matching network. In at least one embodiment, the passive unit network is a portion of an output matching network. It is understandable that some components of the output matching network may be disposed in the first RF amplifier chip.

[0089] For example, as shown in Figures 3 and 4, a passive cell network 40 is connected between the chip signal output terminal and the primary coil of the output transformer. In at least one embodiment, the passive cell network 40 includes capacitive elements and / or inductive elements, and the capacitive elements and / or inductive elements are surrounded by the primary signal trace.

[0090] The capacitor element may be a discrete device or implemented through wiring on a substrate. The inductor element may be a discrete device or implemented through wiring on a substrate. In this embodiment, by arranging capacitor elements and / or inductor elements within the space surrounded by the primary signal traces, full utilization of the space is achieved, thereby further improving the overall integration of the RF power amplifier.

[0091] In at least one embodiment, the passive unit network includes a fourth signal line, one end of which is connected to the chip signal output terminal, and the other end of which is connected to the first input terminal or the second input terminal of the primary coil. In at least one embodiment, the passive unit network includes a fourth signal line, one end of which is connected to the single-ended signal output terminal A, and the other end of which is connected to the first input terminal or the second input terminal of the primary coil.

[0092] In at least one embodiment, the passive unit network includes a capacitor connected between the chip signal output terminal and the primary coil of the output transformer. The capacitor can be a discrete device or can be implemented through wiring on a substrate.

[0093] In at least one embodiment, the passive unit network includes at least a portion of a first passive unit network. In at least one embodiment, the passive unit network includes at least a portion of a second passive unit network. In at least one embodiment, the passive unit network includes at least a portion of a third passive unit network.

[0094] In at least one embodiment, the passive unit network includes at least one of a first passive unit network, a second passive unit network, and a third passive unit network.

[0095] In at least one embodiment, the secondary coil includes a first output end and a second output end, and the first output end and the second output end are arranged relative to the first portion of the wiring and away from the first radio frequency amplifier chip.

[0096] In at least one embodiment, the distance between the first portion of the routing and the first RF amplifier chip is smaller than the distance between the first output end of the secondary coil and the first portion of the routing, and the distance between the first portion of the routing and the first RF amplifier chip is smaller than the distance between the second output end of the secondary coil and the first portion of the routing.

[0097] It is understandable that the first output terminal and the second output terminal of the secondary coil can be set on the right side of the first portion of the wiring 2131, and are not limited to the position in Figure 1. For example, the first output terminal can be set in an area in the upper right, lower right or right side of the first portion of the wiring 2131. The second output terminal can be set in an area in the upper right, lower right or right side of the first portion of the wiring 2131. It is understandable that the first output terminal and the second output terminal can be set in the same area in the upper right, lower right or right side mentioned above, or they can be in different areas respectively. It is understandable that the right and right side mentioned in this embodiment are the right and right sides relative to the first RF amplifier chip and / or the first portion of the wiring.

[0098] In at least one embodiment, the distance between the first input terminal and the first RF amplifier chip is smaller than the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or the distance between the second input terminal and the first RF amplifier chip is smaller than the distance between the first output terminal or the second output terminal and the first RF amplifier chip. Optionally, the primary coil and the secondary coil can be arranged in the same wiring layer of the substrate, with the secondary coil arranged around the primary coil.

[0099] In at least one embodiment, the distance between the first input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or the distance between the second input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip. Optionally, the primary coil and the secondary coil can be arranged in different wiring layers in the substrate, and the primary coil and the secondary coil are longitudinally coupled. It can be understood that the longitudinal direction is a relative direction. In this embodiment, the longitudinal direction is a direction close to the thickness of the substrate.

[0100] In at least one embodiment, the radio frequency power amplifier further comprises:

[0101] A third signal trace is provided in the substrate and is connected between the first input end of the primary coil and the second input end of the primary coil.

[0102] In at least one embodiment, the passive unit network includes the third signal routing, and the third signal routing includes a second portion of routing arranged in the first wiring layer of the substrate and a third portion of routing arranged in the second wiring layer of the substrate, and the second portion of routing and the third portion of routing overlap in a longitudinal projection. In at least one embodiment, the third signal routing is surrounded by the primary signal routing. By arranging the third signal routing in a region surrounded by multiple wiring layers and in a region surrounded by the primary signal routing, it is possible to ensure that the third signal routing has sufficient inductance. It is understandable that the longitudinal direction is a relative direction. In this embodiment, the longitudinal direction is a direction close to the thickness of the substrate.

[0103] At least one embodiment of the present application provides a radio frequency power amplifier, including:

[0104] substrate;

[0105] A first radio frequency amplifier chip is provided on the substrate and includes a single-ended signal output terminal;

[0106] an output transformer, disposed on the substrate, comprising a primary coil and a secondary coil coupled to each other;

[0107] The primary coil includes a first input terminal, a second input terminal, and a primary signal trace connecting the first input terminal and the second input terminal, the single-ended signal output terminal is connected to the first input terminal of the primary coil, and the second input terminal of the primary coil is configured to be grounded or configured to be connected to a power supply terminal;

[0108] The primary signal trace includes a first portion of the trace disposed adjacent to the first RF amplifier chip, and the first input end of the primary coil and the second input end of the primary coil are disposed away from the first RF amplifier chip relative to the first portion of the trace;

[0109] A passive unit network is connected between the single-ended signal output terminal and the primary coil of the output transformer, and at least one element in the passive unit network is arranged between the first input terminal and the first radio frequency amplifier chip.

[0110] This embodiment arranges the first input end of the primary coil and the second input end of the primary coil relative to the first portion of the wiring away from the first RF amplifier chip. This provides sufficient space / distance between the single-ended signal output end and the two input ends of the primary coil, and provides sufficient space / distance for the wiring or components between the chip signal output end and the primary coil, eliminating the need for additional space and improving the overall integration of the RF power amplifier. By arranging a passive unit network between the single-ended signal output end and the primary coil of the output transformer, and arranging at least one component in the passive unit network between the first input end and the first RF amplifier chip, better space utilization is achieved, thereby improving the overall integration of the RF power amplifier.

[0111] At least one embodiment of the present application provides a radio frequency power amplifier, including:

[0112] substrate;

[0113] A first radio frequency amplifier chip is provided on the substrate and includes a first differential output terminal and a second differential output terminal;

[0114] an output transformer, disposed on the substrate, comprising a primary coil and a secondary coil coupled to each other;

[0115] The primary coil includes a first input terminal, a second input terminal, and a primary signal trace connecting the first input terminal and the second input terminal, the first differential output terminal is connected to the first input terminal, and the second differential output terminal is connected to the second input terminal;

[0116] The primary signal trace includes a first portion of the trace disposed adjacent to the first RF amplifier chip, and the first input end of the primary coil and the second input end of the primary coil are disposed away from the first RF amplifier chip relative to the first portion of the trace.

[0117] This embodiment includes a substrate, and a first RF amplifier chip and an output transformer disposed on the substrate. For example, as shown in FIG5 , the first RF amplifier chip 10 and the output transformer 20 are disposed on the substrate 100 .

[0118] The first RF amplifier chip 10 includes a first differential output terminal B and a second differential output terminal C. It is understood that the first RF amplifier chip 10 is configured to amplify RF signals and output them as differential signals. In at least one embodiment, the two differential signals of the first RF amplifier chip 10 are output through the first differential output terminal and the second differential output terminal, respectively.

[0119] The output transformer is provided on the substrate 100 and includes a primary coil 21 and a secondary coil 22 coupled to each other. The primary coil 21 includes a first input terminal 211, a second input terminal 212, and a primary signal trace 213 connecting the first input terminal and the second input terminal.

[0120] As shown in Figure 2 , the primary signal routing includes a first portion of routing 2131 disposed adjacent to the first RF amplifier chip. It is understood that the first portion of routing 2131 may be any portion of the primary signal routing. The first input terminal 211 and the second input terminal 212 of the primary coil 21 are disposed away from the first RF amplifier chip relative to the first portion of routing 2131. Using Figure 2 as an example, the first input terminal 211 and the second input terminal 212 of the primary coil 21 are disposed to the right of the first portion of routing 2131, and the first RF amplifier chip 10 is disposed to the left of most of the first portion of routing 2131.

[0121] In this embodiment, the first input terminal of the primary coil and the second input terminal of the primary coil are arranged away from the first RF amplifier chip relative to the first portion of the wiring. The first differential output terminal and the first input terminal can be connected via the first signal wiring, and the second differential output terminal and the second input terminal can be connected via the second signal wiring. Compared with the solution of directly arranging the first input terminal and the second input terminal of the primary coil directly adjacent to the two differential output terminals, the first signal wiring and the second signal wiring can be ensured to have sufficient length, and there can be a sufficiently large equivalent inductance between the first differential output terminal of the first RF amplifier chip and the first input terminal of the primary coil, and between the second differential output terminal and the second input terminal of the primary coil. In the solution where this inductance needs to be set, no additional space is required to set this inductance, and the differential amplification solution can ensure a higher output power of the RF power amplifier, while also improving the integration of the RF power amplifier while ensuring the output power.

[0122] In at least one embodiment, the RF power amplifier is configured to support amplification of low-band RF signals. In at least one embodiment, the RF power amplifier is configured to support amplification of mid-band RF signals. In at least one embodiment, the RF power amplifier is configured to support amplification of high-band RF signals. Optionally, the frequency range of the low-band includes 0.5GHz-1.5GHz. Optionally, the frequency range of the mid-band includes 1.7GHz-2GHz; the range of the high-band includes 2.3GHz-2.7GHz. Optionally, the frequency range of the low-band is 0.5GHz-1.3GHz. Optionally, the frequency range of the low-band is 0.6GHz-0.9GHz. Optionally, the frequency range of the low-band is 0.663GHz-0.915GHz.

[0123] In at least one embodiment, the radio frequency power amplifier further comprises:

[0124] a first signal trace, one end of the first signal trace being connected to the first differential output end, and the other end of the first signal trace being connected to the first input end of the primary coil;

[0125] A second signal line, one end of the second signal line is connected to the second differential output end, and the other end of the first signal line is connected to the second input end of the primary coil.

[0126] As shown in Figure 5 , one end of a first signal trace 31 is connected to the first differential output terminal, and the other end of the first signal trace 31 is connected to the first input terminal of the primary coil. One end of a second signal trace 32 is connected to the second differential output terminal, and the other end of the first signal trace 32 is connected to the second input terminal of the primary coil.

[0127] The first signal trace may be implemented by at least one wiring layer in the substrate or by a wire bonding line. The second signal trace may be implemented by at least one wiring layer in the substrate or by a wire bonding line.

[0128] In at least one embodiment, the first signal trace is disposed in at least one wiring layer in the substrate, and the second signal trace is disposed in at least one wiring layer in the substrate.

[0129] A first signal trace 31 is disposed in the substrate. It is understood that the first signal trace 31 can be disposed in any wiring layer of the substrate, or in at least two wiring layers of the substrate. One end of the first signal trace 31 is connected to the first differential output terminal, and the other end of the first signal trace is connected to the first input terminal of the primary coil.

[0130] The second signal trace 32 is disposed in the substrate. It is understood that the second signal trace 32 can be disposed in any wiring layer of the substrate, or in at least two wiring layers of the substrate. One end of the second signal trace 32 is connected to the second differential output terminal, and the other end of the first signal trace is connected to the second input terminal of the primary coil.

[0131] In at least one embodiment, as shown in Figure 5 , the first signal trace 31 overlaps with the first partial trace 2131 in a longitudinal projection, and / or the second signal trace 32 overlaps with the first partial trace 2131 in a longitudinal projection. As shown in Figure 5 , the first signal trace and the first partial trace overlap in a longitudinal projection, and the second signal trace and the first partial trace overlap in a longitudinal projection. It is understood that the first signal trace and the first partial trace only overlap in a longitudinal projection and are not electrically connected through this overlapping portion of the longitudinal projection. The second signal trace and the first partial trace only overlap in a longitudinal projection and are not electrically connected through this overlapping portion of the longitudinal projection. Exemplarily, the first partial trace and the portion of the first signal trace that overlaps in a longitudinal projection can be arranged in different wiring layers of the substrate. The first partial trace and the portion of the second signal trace that overlaps in a longitudinal projection can be arranged in different wiring layers of the substrate.

[0132] In at least one embodiment, the secondary coil includes a first output end and a second output end, and the first output end and the second output end are arranged relative to the first portion of the routing, away from the first RF amplifier chip. The secondary coil includes a first output end and a second output end. The first output end and the second output end are also arranged relative to the first portion of the routing, away from the first RF amplifier chip.

[0133] In at least one embodiment, the first output terminal of the secondary coil is connected to a signal output terminal of a radio frequency power amplifier, and the second output terminal is configured to be grounded.

[0134] In at least one embodiment, the distance between the first input terminal and the first RF amplifier chip is smaller than the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or the distance between the second input terminal and the first RF amplifier chip is smaller than the distance between the first output terminal or the second output terminal and the first RF amplifier chip.

[0135] In at least one embodiment, the distance between the first input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or the distance between the second input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip.

[0136] In at least one embodiment, the RF power amplifier further includes a third signal trace disposed on the substrate and connected between the first input terminal of the primary coil and the second input terminal of the primary coil. The equivalent inductance of the third signal trace contributes to matching of the RF power amplifier.

[0137] In at least one embodiment, the third signal line and the first signal line have at least one first overlapping portion in a longitudinal projection, and / or the third signal line and the second signal line have at least one second overlapping portion in a longitudinal projection. For example, as shown in FIG7 , the third signal line 33 and the first signal line 31 have at least one first overlapping portion in a longitudinal projection, and the third signal line 33 and the second signal line 32 have at least one second overlapping portion in a longitudinal projection. It is understood that the third signal line 33 and the first signal line 31 only overlap in a longitudinal projection and are not electrically connected to each other through this overlapping portion in the longitudinal projection. The third signal line 33 and the second signal line only overlap in a longitudinal projection and are not electrically connected to each other through this overlapping portion in the longitudinal projection. For example, the third signal line 33 and the portion of the first signal line 31 that overlaps in a longitudinal projection can be arranged in different wiring layers of the substrate. The third signal trace 33 and the portion of the second signal trace 32 that overlaps in the longitudinal projection may be arranged in different wiring layers of the substrate.

[0138] The number of first overlapping portions can be set based on the required inductance value. It is understood that, with other settings being the same, the higher the required inductance value, the greater the number of first overlapping portions. The number of second overlapping portions can be set based on the required inductance value. It is understood that, with other settings being the same, the higher the required inductance value, the greater the number of first overlapping portions.

[0139] In at least one embodiment, the third signal trace includes a second portion of traces disposed in the first wiring layer of the substrate and a third portion of traces disposed in the second wiring layer of the substrate, wherein the second portion of traces and the third portion of traces overlap in longitudinal projection. As shown in FIG7 , the third signal trace can be disposed in at least two wiring layers of the substrate. Furthermore, the two portions of traces disposed in different wiring layers overlap in longitudinal projection.

[0140] In at least one embodiment, the RF power amplifier further includes a capacitor element 34 disposed on the substrate, one end of the capacitor element being connected to the third signal trace, and the other end of the capacitor element being connected to the first input end of the primary coil or the second input end of the primary coil. Optionally, the capacitor element is a discrete device.

[0141] In at least one embodiment, the first portion of routing includes a first sub-routing provided in the first wiring layer of the substrate and a second sub-routing provided in the third wiring layer of the substrate, and the first signal routing, the first sub-routing, and the second sub-routing all overlap in a longitudinal projection. As shown in Figures 6 and 7, the first portion of routing includes a first sub-routing 21311 provided in the first wiring layer of the substrate and a second sub-routing 21312 provided in the third wiring layer of the substrate. The first signal routing 31, the first sub-routing 21311, and the second sub-routing 21312 all overlap in a longitudinal projection. In at least one embodiment, the second signal routing 32, the first sub-routing, and the second sub-routing all overlap in a longitudinal projection.

[0142] In at least one embodiment, the first portion of routing includes a first sub-routing arranged in the first wiring layer of the substrate and a second sub-routing arranged in the third wiring layer of the substrate, the first sub-routing and the second sub-routing are connected through a first through-hole 214, and the first through-hole is located between the first signal routing and the second signal routing.

[0143] In at least one embodiment, the secondary coil further includes a secondary signal trace connecting the first output end and the second output end, and the primary signal trace and the secondary signal trace are arranged in the same wiring layer of the substrate.

[0144] In at least one embodiment, the secondary coil further includes a secondary signal trace connecting the first output terminal and the second output terminal, the substrate includes a first wiring layer, a second wiring layer, and a third wiring layer arranged in sequence, the primary signal trace is arranged in the first wiring layer and the third wiring layer, the secondary signal trace is arranged in the second wiring layer, and the primary signal trace and the secondary signal trace are longitudinally coupled. The first wiring layer, the second wiring layer, and the third wiring layer can be arranged in order from top to bottom, or the first wiring layer, the second wiring layer, and the third wiring layer can be arranged in order from bottom to top. It is understandable that the first wiring layer, the second wiring layer, and the third wiring layer can be layers arranged adjacent to each other, or can be arranged at intervals.

[0145] For example, as shown in FIG7 , primary signal lines are arranged in a first wiring layer and a third wiring layer, wherein the primary signal lines arranged in the first wiring layer and the primary signal lines arranged in the third wiring layer can be connected via a via, for example, via via 214. A secondary signal line is arranged in a second wiring layer between the first wiring layer and the third wiring layer, and is longitudinally coupled to the primary signal line.

[0146] In at least one embodiment, the inductance of the first signal trace is smaller than the inductance of the primary signal trace.

[0147] At least one embodiment of the present application provides a radio frequency power amplifier, including:

[0148] substrate;

[0149] A first radio frequency amplifier chip is provided on the substrate and includes a first differential output terminal and a second differential output terminal;

[0150] an output transformer, disposed on the substrate, comprising a primary coil and a secondary coil coupled to each other;

[0151] The primary coil includes a first input terminal, a second input terminal, and a primary signal trace connecting the first input terminal and the second input terminal;

[0152] a first signal trace provided in the substrate, wherein one end of the first signal trace is connected to the first differential output end, and the other end of the first signal trace is connected to the first input end of the primary coil;

[0153] a second signal trace disposed in the substrate, wherein one end of the second signal trace is connected to the second differential output end, and the other end of the first signal trace is connected to the second input end of the primary coil;

[0154] The primary signal trace includes a first portion of the trace disposed adjacent to the first RF amplifier chip, and the first input end of the primary coil and the second input end of the primary coil are disposed away from the first RF amplifier chip relative to the first portion of the trace.

[0155] At least one embodiment of the present application provides a radio frequency front-end module, comprising a radio frequency power amplifier as described in any of the above embodiments.

[0156] At least one embodiment of the present application provides an electronic device, comprising the radio frequency front-end module as described in any of the above embodiments.

[0157] At least one embodiment of the present application provides a radio frequency power amplifier, including:

[0158] A differential power amplifier unit is configured to support amplification of low-band RF signals, and includes a first power amplifier transistor and a second power amplifier transistor; the first power amplifier transistor is configured to receive a first RF signal input through a first input path and output it through a first output path after amplification, and the first RF signal is a low-band RF signal; the second power amplifier transistor is configured to receive a second RF signal input through a second input path and output it through a second output path after amplification, and the second RF signal is a low-band RF signal.

[0159] The output transformer includes a primary coil and a secondary coil coupled to each other.

[0160] The first passive unit network includes a first inductor and a second inductor.

[0161] A first inductor is connected in series between the output terminal of the first power amplifying transistor and the first end of the primary coil.

[0162] A second inductor is connected in series between the output terminal of the second power amplifying transistor and the second end of the primary coil.

[0163] The RF power amplifier includes a differential power amplifier unit, which may include two differential amplification paths. Taking Figure 9 as an example, the differential power amplifier unit includes a first power amplifier transistor 11 and a second power amplifier transistor 12. Optionally, the differential power amplifier unit is provided in the first RF amplifier chip. In this case, the output of the first power amplifier transistor is connected to the first differential output terminal, and the output of the second power amplifier transistor is connected to the second differential output terminal.

[0164] The first power amplifier transistor 11 is configured to receive an input first RF signal through a first input path and output it through a first output path after amplification, wherein the first RF signal is a low-band RF signal. The second power amplifier transistor 12 is configured to receive an input second RF signal through a second input path and output it through a second output path after amplification, wherein the second RF signal is a low-band RF signal. That is, the first power amplifier transistor 11 and the second power amplifier transistor 12 respectively serve as amplifier transistors in two differential amplification paths of a differential power amplifier unit. It can be understood that the first RF signal and the second RF signal are differential signals. Optionally, the first RF signal and the second RF signal can be two differential signals converted from an RF input signal by a power divider, or can be two differential signals after amplification by two pre-amplifier stages.

[0165] In at least one embodiment, the first radio frequency signal is a low-band radio frequency signal. In at least one embodiment, the second radio frequency signal is a low-band radio frequency signal. Optionally, the frequency range of the low-band is 0.5 GHz to 1.5 GHz. Optionally, the frequency range of the low-band is 0.5 GHz to 1.3 GHz. Optionally, the frequency range of the low-band is 0.6 GHz to 0.9 GHz. Optionally, the frequency range of the low-band is 0.663 GHz to 0.915 GHz.

[0166] The output transformer includes a mutually coupled primary coil 21 and a secondary coil 22. Optionally, the output transformer can be implemented by using the output transformer described in any of the above embodiments / implementations.

[0167] The first passive unit network includes a first inductor 31 and a second inductor 32. The first inductor 31 is connected in series between the output of the first power amplifier transistor and the first end of the primary coil. The second inductor 32 is connected in series between the output of the second power amplifier transistor and the second end of the primary coil. In at least one embodiment, the first inductor can be implemented by the first signal trace described in any of the above embodiments / implementations, and the second inductor can be implemented by the second signal trace described in any of the above embodiments / implementations.

[0168] The inductance of the first inductor is greater than 0.1 nH. The inductance of the first inductor is greater than 0.1 nH.

[0169] In at least one embodiment, the inductance of the first inductor is greater than 0.3 nH, and the inductance of the second inductor is greater than 0.3 nH. In at least one embodiment, the inductance of the first inductor is greater than 0.5 nH, and the inductance of the second inductor is greater than 0.5 nH.

[0170] In at least one embodiment, the inductance of the first inductor is greater than 0.3 nH and less than 5 nH, and the inductance of the second inductor is greater than 0.3 nH and less than 5 nH. In at least one embodiment, the inductance of the first inductor is greater than 0.5 nH and less than 2 nH, and the inductance of the second inductor is greater than 0.5 nH and less than 2 nH.

[0171] In at least one embodiment, the inductance of the primary coil is greater than or equal to 3 nH. In at least one embodiment, the inductance of the primary coil is greater than or equal to 5 nH. In at least one embodiment, the inductance of the primary coil is less than 20 nH.

[0172] In at least one embodiment, a turns ratio between the primary coil and the secondary coil is greater than 1:2.

[0173] In at least one embodiment, the inductance of the first inductor is smaller than the inductance of the primary coil, and the inductance of the second inductor is smaller than the inductance of the primary coil.

[0174] In this embodiment, a differential power amplifier unit includes a first power amplifier transistor and a second power amplifier transistor. The first power amplifier transistor is configured to receive a first RF signal input through a first input path, amplify the signal, and output the signal through a first output path. The first RF signal is a low-band RF signal. The second power amplifier transistor is configured to receive a second RF signal input through a second input path, amplify the signal, and output the signal through a second output path. The second RF signal is a low-band RF signal. An output transformer includes a primary coil and a secondary coil coupled to each other. A first passive unit network includes a first inductor and a second inductor. The first inductor is connected in series between the output terminal of the first power amplifier transistor and the first terminal of the primary coil, and the inductance of the first inductor is greater than 0.1 nH. The second inductor is connected in series between the output terminal of the second power amplifier transistor and the second terminal of the primary coil, and the inductance of the second inductor is greater than 0.1 nH. By amplifying the low-band RF signal through the differential power amplifier unit, a higher output power can be ensured. Furthermore, the configuration of the first passive unit network, in conjunction with the output transformer, can achieve better bandwidth performance in the low frequency band.

[0175] For example, as shown in FIG16 , which is a simulation diagram of the RF power amplifier in the above embodiment, it can be seen that within a wider frequency band (0.5 GHz-1.3 GHz), the impedance of the RF power amplifier remains relatively convergent.

[0176] In at least one embodiment, the frequency range of the low frequency band is 0.5 GHz to 1.5 GHz. In at least one embodiment, the turns ratio of the primary coil to the secondary coil of the output transformer is less than or equal to 2. Alternatively, the turns ratio of the primary coil to the secondary coil can be 2:1, 2:1, 5, 1:1, 1:1.5, etc.

[0177] In at least one embodiment, the inductance of the primary coil is 3nH-20nH.

[0178] In at least one embodiment, the ratio of the inductance of the first inductor to the inductance of the primary coil is less than 0.5, and the ratio of the inductance of the second inductor to the inductance of the primary coil is less than 0.5. For example, if the inductance of the primary coil is 15 nH, the inductance of the first inductor is less than 7.5 nH.

[0179] In at least one embodiment, a ratio of the inductance of the first inductor to the inductance of the primary coil is less than 0.2, and a ratio of the inductance of the second inductor to the inductance of the primary coil is less than 0.2.

[0180] In at least one embodiment, a ratio of the inductance of the first inductor to the inductance of the primary coil is greater than 0.05, and a ratio of the inductance of the second inductor to the inductance of the primary coil is greater than 0.05.

[0181] By setting the inductance values ​​of the first inductor, the second inductor, and the primary coil in a coordinated manner, better output impedance matching can be achieved, thereby achieving better bandwidth performance.

[0182] In at least one embodiment, the RF power amplifier further includes a second passive unit network connected between the differential power amplification unit and the first passive unit network.

[0183] As shown in Figure 10, the RF power amplifier also includes a second passive unit network 41. The second passive unit network is connected between the differential power amplification unit and the first passive unit network. It can be understood that the second passive unit network 41 can be connected between the differential power amplification unit and the first passive unit network, which is more of a relative position limitation. The second passive unit network 41 can be connected in series between the differential power amplification unit and the first passive unit network, or can be connected in parallel between the differential power amplification unit and the first passive unit network. Alternatively, some passive elements in the second passive unit network 41 are connected in series between the differential power amplification unit and the first passive unit network, and some passive elements are connected in parallel between the differential power amplification unit and the first passive unit network.

[0184] In at least one embodiment, the second passive unit network or a portion of the second passive unit network can be set up in the manner of the passive unit network described in any of the above embodiments / implementations.

[0185] In at least one embodiment, the second passive cell network includes at least one of a capacitive cell or an inductive cell.

[0186] In at least one embodiment, the second passive element network includes a first capacitor C1.

[0187] For example, in FIG11( a ), the second passive unit network includes a first capacitor C1 , and the first capacitor C1 is connected between the output terminal of the first power amplifying transistor and the output terminal of the second power amplifying transistor.

[0188] In at least one embodiment, the second passive unit network includes a first capacitor and a third capacitor. For example, in FIG11( b), the second passive unit network includes a first capacitor C1 and a third capacitor C3. One end of the first capacitor C1 is connected to the output terminal of the first power amplifier transistor, and the other end of the first capacitor C1 is configured to be grounded. One end of the third capacitor C3 is connected to the output terminal of the second power amplifier transistor, and the other end of the third capacitor C3 is configured to be grounded.

[0189] In at least one embodiment, the second passive unit network includes a first capacitor and a third inductor. As shown in (c) of Figure 11, the first capacitor C1 and the third inductor L3 are connected in series and connected between the output terminal of the first power amplifier transistor and the output terminal of the second power amplifier transistor. Optionally, the first end of the first capacitor is connected to the output terminal of the first power amplifier transistor, the second end of the first capacitor is connected to the first end of the third inductor, and the second end of the third inductor is connected to the output terminal of the second power amplifier transistor. Optionally, the first end of the first capacitor is connected to the output terminal of the second power amplifier transistor, the second end of the first capacitor is connected to the first end of the third inductor, and the second end of the third inductor is connected to the output terminal of the first power amplifier transistor.

[0190] In at least one embodiment, the second passive unit network may be a combination of at least two of (a), (b), and (c) in FIG. 11 .

[0191] Exemplarily, the second passive unit network includes a first capacitor, a third capacitor, a fifth capacitor, and a third inductor. One end of the first capacitor is connected to the output terminal of the first power amplifier transistor, and the other end of the first capacitor is configured to be grounded. One end of the third capacitor is connected to the output terminal of the second power amplifier transistor, and the other end of the third capacitor is configured to be grounded. The fifth capacitor and the third inductor are connected in series and connected between the output terminal of the first power amplifier transistor and the output terminal of the second power amplifier transistor.

[0192] In at least one embodiment, the second passive unit network includes a first capacitor, a fifth capacitor, and a third inductor. The first capacitor is connected between the output terminal of the first power amplifier transistor and the output terminal of the second power amplifier transistor. The fifth capacitor and the third inductor are connected in series and connected between the output terminal of the first power amplifier transistor and the output terminal of the second power amplifier transistor.

[0193] In at least one embodiment, the RF power amplifier further includes a third passive unit network connected between the first passive unit network and the output transformer.

[0194] As shown in Figure 12, the RF power amplifier also includes a third passive cell network 42. This third passive cell network is connected between the first passive cell network and the output transformer. It is understood that the third passive cell network 42 can be connected between the first passive cell network and the output transformer more as a relative positional limitation. The third passive cell network 42 can be connected in series between the first passive cell network and the output transformer, or in parallel between the first passive cell network and the output transformer. Alternatively, some passive components in the third passive cell network 42 can be connected in series between the first passive cell network and the output transformer, while some passive components can be connected in parallel between the first passive cell network and the output transformer.

[0195] In at least one embodiment, the third passive unit network or a portion of the third passive unit network may be configured in the manner of the passive unit network described in any of the above embodiments / implementations.

[0196] In at least one embodiment, the third passive unit network includes at least one of a capacitive unit or an inductive unit.

[0197] In at least one embodiment, the third passive element network includes a second capacitor C2.

[0198] In at least one embodiment, as shown in FIG13( a ), the third passive unit network includes a second capacitor connected in series between the first end of the primary coil and the second end of the primary coil. Specifically, the first end of the second capacitor is connected to the first end of the primary coil, and the second end of the second capacitor is connected to the second end of the primary coil.

[0199] In at least one embodiment, the third passive unit network includes a second capacitor and a fourth inductor. As shown in (b) of Figure 13, the second capacitor C2 and the fourth inductor L4 are connected in series between the first end of the primary coil and the second end of the primary coil. Optionally, the first end of the second capacitor is connected to the first end of the primary coil, the second end of the second capacitor is connected to the first end of the fourth inductor, and the second end of the fourth inductor is connected to the second end of the primary coil.

[0200] In at least one embodiment, the first end of the secondary coil is configured to be connected to the output terminal, and the second end of the secondary coil is configured to be grounded.

[0201] In at least one embodiment, as shown in Figure 14, the RF power amplifier further includes a second passive unit network 41 and a third passive unit network 42. The specific structures of the second passive unit network 42 and the third passive unit network 43 can refer to the contents of the above embodiments and will not be repeated here.

[0202] In at least one embodiment, the second passive cell network includes a first capacitor, and the third passive cell network includes a second capacitor.

[0203] In at least one embodiment, the capacitance of the first capacitor is greater than the capacitance of the second capacitor. In at least one embodiment, the capacitance of the first capacitor is greater than twice the capacitance of the second capacitor.

[0204] At least one embodiment of the present application provides a radio frequency power amplifier, characterized by comprising:

[0205] The differential power amplifier unit includes a first power amplifier transistor and a second power amplifier transistor; the first power amplifier transistor is configured to receive a first radio frequency signal input through a first input path, amplify the signal, and output the signal through a first output path, wherein the first radio frequency signal is a low-band radio frequency signal; the second power amplifier transistor is configured to receive a second radio frequency signal input through a second input path, amplify the signal, and output the signal through a second output path, wherein the second radio frequency signal is a low-band radio frequency signal;

[0206] an output transformer comprising a primary coil and a secondary coil coupled to each other;

[0207] A first passive unit network includes a first inductor and a second inductor;

[0208] a first inductor connected in series between the output terminal of the first power amplifying transistor and the first end of the primary coil;

[0209] A second inductor is connected in series between the output terminal of the second power amplifying transistor and the second end of the primary coil.

[0210] a second passive unit network connected between the differential power amplification unit and the first passive unit network, wherein the second passive unit network includes a first capacitor;

[0211] The third passive unit network is connected between the first passive unit network and the output transformer. The third passive unit network includes a second capacitor. The capacitance value of the first capacitor is greater than the capacitance value of the second capacitor.

[0212] At least one embodiment of the present application provides a radio frequency front-end module, including:

[0213] substrate;

[0214] A first radio frequency amplifier chip disposed on a substrate includes a differential power amplifier unit, the differential power amplifier unit including a first power amplifier transistor and a second power amplifier transistor; the first power amplifier transistor is configured to receive a first radio frequency signal input through a first input path, amplify the signal, and output the signal through a first output path, wherein the first radio frequency signal is a low-band radio frequency signal; the second power amplifier transistor is configured to receive a second radio frequency signal input through a second input path, amplify the signal, and output the signal through a second output path, wherein the second radio frequency signal is a low-band radio frequency signal;

[0215] An output transformer disposed on the substrate includes a primary coil and a secondary coil coupled to each other;

[0216] a first signal line connected in series between the output terminal of the first power amplifying transistor and the first end of the primary coil;

[0217] The second signal line is connected in series between the output terminal of the second power amplifying transistor and the second end of the primary coil.

[0218] As shown in FIG15 , the RF front-end module includes a substrate 100 , and a first RF amplifier chip and an output transformer disposed on the substrate.

[0219] A first signal line 31 is connected in series between the output terminal of the first power amplifier transistor and the first end of the primary coil. A second signal line 32 is connected in series between the output terminal of the second power amplifier transistor and the second end of the primary coil. Optionally, the first and second signal lines are signal lines disposed on the substrate, or the first and second signal lines are bonding wires. The equivalent inductance of the signal lines or bonding wires on the substrate serves as the first and second inductors in the above embodiment.

[0220] It is understandable that the RF front-end module may further include a second passive unit network, which is connected between the differential power amplifier unit and the first signal trace 31 and the second signal trace 32. The second passive unit network may be disposed in the first RF amplifier chip or on the substrate, or some passive components of the second passive unit may be disposed in the first RF amplifier chip and other passive components may be disposed on the substrate.

[0221] It is understandable that the RF front-end module may further include a third passive unit network, wherein the second passive unit network is connected between the first signal trace 31 and the second signal trace 32, and between the output transformer. The third passive unit network may be disposed in the first RF amplifier chip or on the substrate, or some passive components of the third passive unit may be disposed in the first RF amplifier chip, while other passive components may be disposed on the substrate.

[0222] The above is only a preferred embodiment of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and replacements can be made without departing from the technical principles of the present application. These improvements and replacements should also be regarded as the scope of protection of the present application.

Claims

1. A radio frequency power amplifier, characterized in that: include: substrate; A first radio frequency amplifier chip, disposed on the substrate, comprising a chip signal output terminal; An output transformer, disposed on the substrate, comprising a primary coil and a secondary coil coupled to each other; The primary coil comprises a first input terminal, a second input terminal and a primary signal wiring connecting the first input terminal and the second input terminal, and the chip signal output terminal is connected to the primary coil; The primary signal routing includes a first portion of routing arranged adjacent to the first RF amplifier chip, and the first input end of the primary coil and the second input end of the primary coil are arranged away from the first RF amplifier chip relative to the first portion of routing.

2. The radio frequency power amplifier according to claim 1, characterized in that: The distance between the first portion of the routing and the first RF amplifier chip is smaller than the distance between the first input end of the primary coil and the first portion of the routing, and the distance between the first portion of the routing and the first RF amplifier chip is smaller than the distance between the second input end of the primary coil and the first portion of the routing.

3. The radio frequency power amplifier according to claim 1, characterized in that: Also includes: A passive unit network is connected between the chip signal output terminal and the primary coil of the output transformer, and at least one element in the passive unit network is arranged between the first input terminal and the first radio frequency amplifier chip.

4. The radio frequency power amplifier according to claim 3, characterized in that: The passive unit network includes a capacitive element and / or an inductive element, and the capacitive element and / or the inductive element is surrounded by the primary signal trace.

5. The radio frequency power amplifier according to claim 1, characterized in that: The secondary coil includes a first output end and a second output end, and the first output end and the second output end are arranged away from the first radio frequency amplifier chip relative to the first portion of the wiring.

6. The radio frequency power amplifier according to claim 5, characterized in that: The distance between the first input terminal and the first RF amplifier chip is smaller than the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or the distance between the second input terminal and the first RF amplifier chip is smaller than the distance between the first output terminal or the second output terminal and the first RF amplifier chip.

7. The radio frequency power amplifier according to claim 5, characterized in that: The distance between the first input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or the distance between the second input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip.

8. The radio frequency power amplifier according to claim 3, characterized in that: The passive unit network includes a third signal routing arranged in a substrate, the third signal routing includes a second portion of routing arranged in a first wiring layer of the substrate and a third portion of routing arranged in a second wiring layer of the substrate, and the second portion of routing and the third portion of routing overlap in a longitudinal projection.

9. A radio frequency power amplifier, characterized in that: include: substrate; A first radio frequency amplifier chip is disposed on the substrate and includes a first differential output terminal and a second differential output terminal; An output transformer, disposed on the substrate, comprising a primary coil and a secondary coil coupled to each other; The primary coil includes a first input terminal, a second input terminal, and a primary signal wiring connecting the first input terminal and the second input terminal, the first differential output terminal is connected to the first input terminal, and the second differential output terminal is connected to the second input terminal; The primary signal routing includes a first portion of routing arranged adjacent to the first RF amplifier chip, and the first input end of the primary coil and the second input end of the primary coil are arranged away from the first RF amplifier chip relative to the first portion of routing.

10. The radio frequency power amplifier according to claim 9, characterized in that: Also includes: a first signal wiring, wherein one end of the first signal wiring is connected to the first differential output end, and the other end of the first signal wiring is connected to the first input end of the primary coil; A second signal wiring, one end of the second signal wiring is connected to the second differential output end, and the other end of the first signal wiring is connected to the second input end of the primary coil.

11. The radio frequency power amplifier according to claim 10, characterized in that: The first signal trace is disposed in at least one wiring layer in the substrate, and the second signal trace is disposed in at least one wiring layer in the substrate.

12. The radio frequency power amplifier according to claim 11, characterized in that: The first signal routing line overlaps with the first portion of routing lines in a longitudinal projection, and / or the second signal routing line overlaps with the first portion of routing lines in a longitudinal projection.

13. The radio frequency power amplifier according to claim 11, characterized in that: Also includes: A third signal trace disposed in the substrate, connected between the first input end of the primary coil and the second input end of the primary coil; There is at least one first overlapping portion between the third signal routing and the first signal routing in a longitudinal projection, and / or there is at least one second overlapping portion between the third signal routing and the second signal routing in a longitudinal projection.

14. The radio frequency power amplifier according to claim 13, characterized in that: The third signal routing includes a second portion of routing arranged in the first wiring layer of the substrate and a third portion of routing arranged in the second wiring layer of the substrate, and the second portion of routing and the third portion of routing overlap in a longitudinal projection.

15. The radio frequency power amplifier according to claim 13, characterized in that: It also includes a first capacitor arranged on the substrate, one end of the first capacitor is connected to the third signal wiring, and the other end of the first capacitor is connected to the first input end of the primary coil or the second input end of the primary coil.

16. The radio frequency power amplifier according to claim 10, characterized in that: The first portion of routing includes a first sub-routing arranged in a first wiring layer of the substrate and a second sub-routing arranged in a third wiring layer of the substrate, and the first signal routing, the first sub-routing and the second sub-routing are overlapped in a longitudinal projection.

17. The radio frequency power amplifier according to claim 11, characterized in that: The first portion of routing includes a first sub-routing arranged in the first wiring layer of the substrate and a second sub-routing arranged in the third wiring layer of the substrate, the first sub-routing and the second sub-routing are connected through a first through hole, and the first through hole is located between the first signal routing and the second signal routing.

18. The radio frequency power amplifier according to claim 11, characterized in that: The secondary coil includes a first output end, a second output end, and a secondary signal trace connecting the first output end and the second output end, and the primary signal trace and the secondary signal trace are arranged in the same wiring layer of the substrate.

19. The radio frequency power amplifier according to claim 11, characterized in that: The secondary coil includes a first output end, a second output end and a secondary signal trace connecting the first output end and the second output end, the substrate includes a first wiring layer, a second wiring layer and a third wiring layer arranged in sequence, the primary signal trace is arranged in the first wiring layer and the third wiring layer, the secondary signal trace is arranged in the second wiring layer, and the primary signal trace and the secondary signal trace are longitudinally coupled.

20. The radio frequency power amplifier according to claim 11, characterized in that: The inductance value of the first signal wiring is smaller than the inductance value of the primary signal wiring.

21. A radio frequency front-end module, characterized in that: Comprising a radio frequency power amplifier as described in any one of claims 1-20.

22. An electronic device, characterized in that: Comprising the RF front-end module as described in claim 21.

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