System for assembling components of substrate processing apparatus and method for assembling components of substrate processing apparatus

Abstract

According to the present invention, a robot transports a component to a designated position within a substrate processing apparatus in a system for assembling components of the disclosed substrate processing apparatus. An image sensor acquires an image of the component and the upper surface of a substrate support part of a semiconductor manufacturing device. A measurement unit derives, from the image, the distance between each of at least two measurement points within the component and each of at least two reference points within the upper surface of the substrate support part, thereby acquiring at least four distances. A control unit controls the robot to transport the component to the designated position in accordance with the result of comparison of the at least four distances and at least four reference distances. The at least four reference distances are established in advance and are the at least four distances when the component is transported to the designated position.

Description

Substrate processing apparatus component assembly system and substrate processing apparatus component assembly method

[0001] SUMMARY An exemplary embodiment of the present disclosure relates to a system and method for assembling components of a substrate processing apparatus.

[0002] Substrate processing apparatuses are used in semiconductor manufacturing. Patent Document 1 below discloses a plasma processing apparatus, which is one type of substrate processing apparatus. The substrate processing apparatus is composed of multiple components. Typically, each of the multiple components is assembled within the substrate processing apparatus using positioning pins and / or jigs.

[0003] Japanese Patent Application Laid-Open No. 2020-191351

[0004] The present disclosure provides techniques for assembling components of substrate processing equipment with high accuracy and high reproducibility.

[0005] In one exemplary embodiment, a system for assembling a component of a substrate processing apparatus is provided. The system includes a robot, an image sensor, a measurement unit, and a control unit. The robot is configured to transport the component to a designated position within the substrate processing apparatus. The image sensor is configured to acquire images of the component and an upper surface of a substrate support of the substrate processing apparatus. The measurement unit is configured to acquire at least four distances by determining, from the images acquired by the image sensor, distances between at least two measurement points within the component and at least two reference points within the upper surface of the substrate support. The control unit is configured to control the robot to transport the component to the designated position in accordance with a comparison result between the at least four distances acquired by the measurement unit and at least four reference distances. The at least four reference distances are predetermined distances that will be obtained when the component is transported to the designated position.

[0006] According to one exemplary embodiment, a technique is provided for assembling components of a substrate processing apparatus with high accuracy and repeatability.

[0007] 1 is a diagram showing an assembly system for components of a substrate processing apparatus according to an exemplary embodiment; 2 is a diagram showing a schematic diagram of a substrate processing apparatus according to an exemplary embodiment; 3 is a perspective view of an assembly system according to an exemplary embodiment; 4 is a diagram showing a plurality of distances identified in an assembly system according to an exemplary embodiment; and 5 is a flow chart of a method for assembling components of a substrate processing apparatus according to an exemplary embodiment.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] 1 is a diagram illustrating an assembly system for components of a substrate processing apparatus according to one exemplary embodiment. The assembly system (hereinafter referred to as "system 100") illustrated in FIG. 1 includes a robot 102, an image sensor 104, a measurement unit 106, and a control unit 108. The system 100 may further include a robot 105. The system 100 is configured to assemble components of the substrate processing apparatus within the substrate processing apparatus using the robot 102.

[0010] 2 is a schematic diagram illustrating a substrate processing apparatus according to an exemplary embodiment. In one embodiment, the system 100 may be used to assemble components of the plasma processing apparatus 1 shown in FIG. 2 as the substrate processing apparatus. Note that the system 100 may also be used to assemble components of a substrate processing apparatus other than the plasma processing apparatus 1.

[0011] 2, the plasma processing apparatus 1 includes a chamber 10. The chamber 10 defines an internal space 10s therein. The internal space 10s can be depressurized. Plasma is generated in the internal space 10s.

[0012] In one embodiment, the chamber 10 may include a chamber body 12 and a ceiling 14. The chamber body 12 constitutes the sidewall and bottom of the chamber 10. The chamber body 12 has a generally cylindrical shape. The central axis of the chamber body 12 generally coincides with an axis AX extending in the vertical direction. The chamber body 12 is electrically grounded. The chamber body 12 is made of, for example, aluminum. A corrosion-resistant film is formed on the surface of the chamber body 12. The corrosion-resistant film is made of, for example, a material such as aluminum oxide or yttrium oxide.

[0013] An opening 12p is formed in the sidewall of the chamber 10. The opening 12p is provided by the chamber body 12. The opening 12p can be opened and closed by a gate valve 12g. The substrate W passes through the opening 12p when being transferred between the internal space 10s and the outside of the chamber 10.

[0014] In one embodiment, the chamber body 12 includes a first member 12a and a second member 12b. The first member 12a has a generally cylindrical shape. The first member 12a forms a bottom and a portion of the sidewall of the chamber 10. The second member 12b has a generally cylindrical shape. The second member 12b is provided on the first member 12a. The second member 12b forms another portion of the sidewall of the chamber 10. The second member 12b provides an opening 12p.

[0015] The plasma processing apparatus 1 further includes a substrate support 16. The substrate support 16 is disposed within the internal space 10s. The substrate support 16 is configured to support a substrate W placed on its upper surface. A bottom plate 17 is provided below the substrate support 16. The bottom plate 17 is supported by the bottom of the chamber 10, for example, by the first member 12a. A support 18 extends upward from the bottom plate 17. The support 18 has a substantially cylindrical shape. The support 18 is made of an insulator such as quartz. The substrate support 16 is mounted on the support 18 and is supported by the support 18.

[0016] The substrate support 16 includes a base 20 and an electrostatic chuck 22. The substrate support 16 may further include an electrode plate 24. The electrode plate 24 has a substantially disk shape. The central axis of the electrode plate 24 substantially coincides with the axis AX. The electrode plate 24 is made of a conductor such as aluminum.

[0017] The base 20 is provided on the electrode plate 24. The base 20 is electrically connected to the electrode plate 24. The base 20 has a substantially disk shape. The central axis of the base 20 substantially coincides with the axis AX. The base 20 is formed from a conductor such as aluminum. A flow path 20f is formed in the base 20. The flow path 20f extends, for example, in a spiral shape. A coolant is supplied to the flow path 20f from a chiller unit 26. The chiller unit 26 is provided outside the chamber 10. The chiller unit 26 supplies, for example, a liquid coolant to the flow path 20f. The coolant supplied to the flow path 20f is returned to the chiller unit 26.

[0018] The electrostatic chuck 22 is provided on the base 20. The electrostatic chuck 22 includes a main body and an electrode 22a. The main body of the electrostatic chuck 22 has a substantially disk shape. The central axis of the electrostatic chuck 22 and its main body is the axis AX. The main body of the electrostatic chuck 22 is made of ceramic. The electrode 22a is a film made of a conductor. The electrode 22a is provided within the main body of the electrostatic chuck 22. A DC power supply 22d is connected to the electrode 22a via a switch 22s. When the electrostatic chuck 22 is to hold the substrate W, a voltage from the DC power supply 22d is applied to the electrode 22a. When the voltage is applied to the electrode 22a, an electrostatic attractive force is generated between the electrostatic chuck 22 and the substrate W. The generated electrostatic attractive force attracts the substrate W to the electrostatic chuck 22, and the substrate W is held by the electrostatic chuck 22. The plasma processing apparatus 1 may be provided with a gas line that supplies a heat transfer gas (e.g., helium gas) to the gap between the electrostatic chuck 22 and the rear surface of the substrate W.

[0019] A focus ring FR is disposed on the peripheral edge of the electrostatic chuck 22 so as to surround the substrate W. The focus ring FR is used to improve the in-plane uniformity of the plasma processing on the substrate W. The focus ring FR is made of, for example, silicon, quartz, or silicon carbide. A ring 27 is provided between the focus ring FR and the base 20. The ring 27 is made of an insulator.

[0020] In one embodiment, the plasma processing apparatus 1 may further include a cylindrical portion 28 and a cylindrical portion 29. The cylindrical portion 28 extends along the outer periphery of the substrate support portion 16 and the support 18. The cylindrical portion 28 is provided on the cylindrical portion 29. The cylindrical portion 28 is formed from a corrosion-resistant insulator. The cylindrical portion 28 is formed from, for example, quartz. The cylindrical portion 29 extends along the outer periphery of the support 18. The cylindrical portion 29 is formed from a corrosion-resistant insulator. The cylindrical portion 29 is formed from, for example, quartz.

[0021] The ceiling 14 is provided to close the upper end opening of the chamber 10. The ceiling 14 includes an upper electrode 30. The ceiling 14 may further include a member 32 and a member 34. The member 32 is a substantially annular plate and is formed from a metal such as aluminum. The member 32 is provided on the side wall of the chamber 10 via a wall member 58 (described later). The member 34 is provided between the upper electrode 30 and the member 32. The member 34 extends in the circumferential direction about the axis AX. The member 34 is formed from an insulator such as quartz. A sealing member such as an O-ring is interposed between the upper electrode 30 and the member 34. A sealing member such as an O-ring is interposed between the member 34 and the member 32.

[0022] The upper electrode 30 includes a top plate 36 and a support 38. The top plate 36 has a substantially disk shape. The top plate 36 is in contact with the internal space 10s. A plurality of gas discharge holes 36h are formed in the top plate 36. The plurality of gas discharge holes 36h penetrate the top plate 36 in the plate thickness direction (vertical direction). The top plate 36 is made of silicon, aluminum oxide, or quartz. Alternatively, the top plate 36 may be formed by forming a corrosion-resistant film on the surface of a conductive member such as aluminum. The corrosion-resistant film is made of a material such as aluminum oxide or yttrium oxide.

[0023] The support 38 is provided on the top plate 36. The support 38 detachably supports the top plate 36. The support 38 is made of, for example, aluminum. A flow path 38f is formed in the support 38. The flow path 38f extends, for example, in a spiral shape within the support 38. A coolant is supplied to the flow path 38f from a chiller unit 40. The chiller unit 40 is provided outside the chamber 10. The chiller unit 40 supplies a liquid coolant (for example, cooling water) to the flow path 38f. The coolant supplied to the flow path 38f is returned to the chiller unit 40. The chiller unit 40 can supply the coolant to the flow path 38f at a flow rate of, for example, 4 L / min or more.

[0024] A gas diffusion chamber 38d is formed inside the support body 38. A plurality of holes 38h are formed in the support body 38. The plurality of holes 38h extend downward from the gas diffusion chamber 38d and are connected to the plurality of gas discharge holes 36h, respectively. A port 38p is provided in the support body 38. The port 38p is connected to the gas diffusion chamber 38d. A gas source group 41 is connected to the port 38p via a valve group 42, a flow rate controller group 43, and a valve group 44.

[0025] The gas source group 41 includes a plurality of gas sources. The valve group 42 and the valve group 44 each include a plurality of valves. The flow rate controller group 43 includes a plurality of flow rate controllers. Each of the plurality of flow rate controllers is a mass flow controller or a pressure-controlled flow rate controller. Each of the plurality of gas sources in the gas source group 41 is connected to the port 38p via a corresponding valve in the valve group 42, a corresponding flow rate controller in the flow rate controller group 43, and a corresponding valve in the valve group 44. In the plasma processing apparatus 1, gas from each of one or more selected gas sources from the plurality of gas sources in the gas source group 41 is supplied to the gas diffusion chamber 38d. The gas supplied to the gas diffusion chamber 38d is supplied to the internal space 10s through a plurality of gas outlet holes 36h.

[0026] The plasma processing apparatus 1 further includes a high-frequency power supply 51 and a bias power supply 52. ​​The high-frequency power supply 51 is a power supply that generates source high-frequency power for generating plasma from the gas in the chamber 10. The frequency of the source high-frequency power is, for example, 27 MHz or higher. The high-frequency power supply 51 is connected to a high-frequency electrode via a matching box 53. The high-frequency electrode is an electrode (e.g., the base 20) in the substrate support 16 or the upper electrode 30. The matching box 53 has a matching circuit for matching the impedance of the load of the high-frequency power supply 51 to the output impedance of the high-frequency power supply 51.

[0027] The bias power supply 52 is a power supply that generates an electric bias for attracting ions to the substrate W. The electric bias has a bias frequency. The bias frequency is, for example, 13.56 MHz or less. The electric bias may be a bias radio frequency power having the bias frequency. In this case, the bias power supply 52 is electrically connected to a bias electrode (e.g., the base 20) in the substrate support 16 via a matcher 54. The matcher 54 has a matching circuit for matching the impedance of the load of the bias power supply 52 to the output impedance of the bias power supply 52. ​​Alternatively, the electric bias may be a voltage pulse that is periodically generated at a time interval that is the reciprocal of the bias frequency. In this case, the bias power supply 52 is connected to the bias electrode without going through the matcher 54.

[0028] The plasma processing apparatus 1 further includes a wall member 58. The wall member 58 is partially provided within the internal space 10s. That is, a portion of the wall member 58 is exposed to plasma within the internal space 10s. The wall member 58 extends from the internal space 10s toward the outside of the chamber 10 and is exposed to the space outside the chamber 10.

[0029] In one embodiment, the wall member 58 extends along the inner wall surface of the chamber 10 to prevent by-products of the plasma processing from depositing on the inner wall surface of the chamber 10. Specifically, the wall member 58 extends along the inner wall surface of the chamber body 12 or the inner wall surface of the second member 12b. The wall member 58 has a substantially cylindrical shape. The wall member 58 can be formed by forming a corrosion-resistant film on the surface of a conductive member such as aluminum. The corrosion-resistant film is made of a material such as aluminum oxide or yttrium oxide. The wall member 58 is connected to ground, and its potential is set to the ground potential.

[0030] In one embodiment, the wall member 58 is sandwiched between the chamber body 12 and the ceiling 14. For example, the wall member 58 is sandwiched between the second member 12b of the chamber body 12 and the member 32 of the ceiling 14.

[0031] In one embodiment, the plasma processing apparatus 1 may further include a spacer 59. The spacer 59 is plate-shaped and extends circumferentially around the axis AX. The spacer 59 is provided between the wall member 58 and the chamber 10. The spacer 59 is formed, for example, from a conductor. The spacer 59 may be formed from a material having a thermal conductivity lower than that of aluminum. The spacer 59 may be formed, for example, from stainless steel. The spacer 59 may be formed from a material other than stainless steel as long as the material has a thermal conductivity lower than that of aluminum. Note that the spacer 59 may be formed from aluminum.

[0032] In one embodiment, the spacer 59 is provided between the wall member 58 and the second member 12b. In one embodiment, the spacer 59 and the second member 12b are fixed to the first member 12a using a screw 60a. The screw 60a passes through the spacer 59 and the second member 12b and is threaded into a threaded hole in the first member 12a. The wall member 58 is fixed to the spacer 59 using a screw 60b. The screw 60b passes through the wall member 58 and is threaded into a threaded hole in the spacer 59. According to this embodiment, even if the wall member 58 is removed from the chamber 10, for example, for maintenance, the spacer 59 and the second member 12b remain fixed to the first member 12a by the screw 60a. Therefore, the wall member 58 can be removed from the chamber 10 while maintaining the spacer 59 and the second member 12b fixed thereto.

[0033] In one embodiment, the plasma processing apparatus 1 further includes a heater unit 62. The heater unit 62 includes a main body 62m and a heater 62h. The heater 62h is configured to heat the wall member 58. The heater 62h may be a resistive heating element. The heater 62h is provided within the main body 62m. The main body 62m is in thermal contact with the wall member 58. In one embodiment, the main body 62m is in physical contact with the wall member 58. The main body 62m is made of a conductor such as aluminum. The heater 62h is configured to heat the wall member 58 via the main body 62m. In one embodiment, the main body 62m is a substantially annular plate that extends in the circumferential direction to surround the upper electrode 30.

[0034] The plasma processing apparatus 1 further includes a ground member 56. The ground member 56 may constitute a part of the ceiling portion 14. The ground member 56 is made of silicon (e.g., polycrystalline silicon). The ground member 56 is provided in the internal space 10s, i.e., the space in which plasma is generated. The ground member 56 is connected to the ground. The ground member 56, together with the wall members 58, is set to a ground potential.

[0035] In one embodiment, the gland member 56 is a substantially annular plate. The gland member 56 extends in the circumferential direction in a radially outer region of the top plate 36. The radial direction is a direction radial to the axis AX. The heater unit 62 is provided between the gland member 56 and the member 32, and between the member 34 and the wall member 58.

[0036] A sealing member such as an O-ring is provided between the main body 62m and the surrounding members to separate the reduced pressure environment including the internal space 10s from the atmospheric pressure environment. Specifically, a sealing member is provided between the main body 62m and the member 32. In addition, a sealing member is provided between the main body 62m and the wall member 58.

[0037] In one embodiment, a baffle member 72 having a plurality of through holes is provided between the wall member 58 and the support 18. In one embodiment, the baffle member 72 has a generally cylindrical shape. The upper end of the baffle member 72 is formed in a flange shape. The lower end of the baffle member 72 is formed in a generally ring shape and extends radially inward. The outer edge of the upper end of the baffle member 72 is connected to the lower end of the wall member 58. The inner edge of the lower end of the baffle member 72 is sandwiched between the cylindrical portion 29 and the bottom plate 17. The baffle member 72 is formed from a conductive plate such as aluminum. A corrosion-resistant film is formed on the surface of the baffle member 72. The corrosion-resistant film is formed from a material such as aluminum oxide or yttrium oxide. The baffle member 72 has a plurality of through holes formed therein.

[0038] The internal space 10s includes an exhaust region extending below the baffle member 72. An exhaust device 74 is connected to the exhaust region. The exhaust device 74 includes a pressure regulator such as an automatic pressure control valve and a decompression pump such as a turbomolecular pump.

[0039] An opening 58p is formed in the wall member 58. The opening 58p is formed in the wall member 58 so as to face the opening 12p. The substrate W passes through the opening 12p and the opening 58p when being transported between the internal space 10s and the outside of the chamber 10.

[0040] In one embodiment, the plasma processing apparatus 1 may further include a shutter mechanism 76. The shutter mechanism 76 is configured to open and close the opening 58p. The shutter mechanism 76 includes a valve body 76v and a shaft body 76s. The shutter mechanism 76 may further include a cylinder body 76a and a drive unit 76d.

[0041] When the valve element 76v is disposed within the opening 58p, it closes the opening 58p. The valve element 76v is supported by a shaft 76s. That is, the shaft 76s is connected to the valve element 76v. The shaft 76s extends downward from the valve element 76v. The shaft 76s is formed in a substantially cylindrical shape. A heater may be provided within the upper end of the shaft 76s. The valve element 76v is heated by this heater.

[0042] The cylindrical body 76a has a cylindrical shape. The cylindrical body 76a is fixed directly or indirectly to the chamber main body 12. The shaft body 76s is movable up and down through the cylindrical body 76a. The drive unit 76d generates power for moving the shaft body 76s up and down. The drive unit 76d includes, for example, a motor. A sealing unit is provided inside the cylindrical body 76a and is interposed between the cylindrical body 76a and the shaft body 76s. This sealing unit may be, but is not limited to, an O-ring or a magnetic fluid seal. The gap between the cylindrical body 76a and the chamber main body 12 is closed by a wall that ensures the airtightness of the internal space 10s.

[0043] In one embodiment, the plasma processing apparatus 1 may further include a supplier 78. The supplier 78 is configured to supply a coolant to the cavity in the shaft body 76s. The coolant may be, for example, air, cooling air, or an inert gas. By supplying the coolant into the shaft body 76s of the shutter mechanism 76, the valve body 76v is indirectly cooled. Therefore, it is possible to indirectly cool the valve body 76v without directly supplying a coolant to the valve body 76v.

[0044] In one embodiment, the plasma processing apparatus 1 may further include a control unit 80. The control unit 80 is configured to control each unit of the plasma processing apparatus 1. The control unit 80 is, for example, a computer device. The control unit 80 has a processor, a memory unit, an input device such as a keyboard, a display device, and a signal input / output interface. The memory unit stores a control program and recipe data. The processor executes the control program and sends control signals to each unit of the plasma processing apparatus 1 via the input / output interface in accordance with the recipe data.

[0045] The system 100 will be described in detail below with reference to FIG. 3 in addition to FIGS. 1 and 2 . FIG. 3 is a perspective view of an assembly system according to an exemplary embodiment. In the system 100, a robot 102 is configured to transport a component 200 of a substrate processing apparatus to a designated position within the substrate processing apparatus. The robot 102 may have a robot arm, such as an articulated arm. The robot 102 is controlled by a control unit 108. The robot 102 has a handler at the tip of the arm. The component 200 is transported while being supported or held by the handler. The component 200 transported by the robot 102 may be, for example, the valve body 76v described above. The component 200 transported by the robot 102 may also be the baffle member 72, the gland member 56, and / or the wall member 58.

[0046] The image sensor 104 is configured to capture images of the upper surface of the substrate support 16 (the upper surface of the electrostatic chuck 22) and the component 200. The image sensor 104 may be disposed above the substrate processing apparatus. The position of the image sensor 104 may be fixed. Alternatively, the image sensor 104 may be movable. For example, the image sensor 104 may be held by a robot 105 and be movable. The robot 105 may be controlled by a controller 108.

[0047] The image sensor 104 may acquire an image of the upper surface of the substrate support 16 (the upper surface of the electrostatic chuck 22) and the component 200 as a single image. Alternatively, the image sensor 104 may acquire an image of the upper surface of the substrate support 16 and an image of the component 200 separately. In this case, the image sensor 104 may be moved by the robot 105 to acquire an image of the upper surface of the substrate support 16 and an image of the component 200 separately. The image acquired by the image sensor 104 is input to the measurement unit 106.

[0048] 1 to 3, and FIG. 4 is a diagram illustrating a plurality of distances determined in an assembly system according to an exemplary embodiment. The measurement unit 106 is configured to obtain at least four distances by determining the distance between each of at least two measurement points in the component 200 and each of at least two reference points in the upper surface of the substrate support 16 from the images acquired by the image sensor 104. The measurement unit 106 may be formed from a calculation device such as a computer. The measurement unit 106 may be formed from a single calculation device together with the control unit 108. Alternatively, the measurement unit 106 may be formed from a calculation device separate from the control unit 108. The measurement unit 106 may also be formed from a dedicated circuit.

[0049] At least two reference points within the upper surface of the substrate support 16 can be identified in the measurement unit 106 from an image of the upper surface of the substrate support 16 acquired by the image sensor 104. Some of the at least two reference points within the upper surface of the substrate support 16 may be points (e.g., center points) within markers within the upper surface of the substrate support 16. The markers within the upper surface of the substrate support 16 may be, but are not limited to, image-recognizable patterns such as screw holes that form the upper surface of the substrate support 16.

[0050] 4 , the at least two reference points include reference points 161 to 163 (first to third reference points). Reference points 161 and 162 may be identified by image recognition of markers on the upper surface of the substrate support 16 in the measurement unit 106. Reference points 161 and 162 may be arranged on a circle having as its center the center of the upper surface of the substrate support 16, that is, the intersection of axis AX, which is the central axis of the substrate support 16, and the upper surface of the substrate support 16. In this case, reference point 163 may be identified by the measurement unit 106 as the center point of the circle identified from reference points 161 and 162. Alternatively, all of reference points 161 to 163 may be identified by image recognition of markers on the upper surface of the substrate support 16.

[0051] At least two measurement points within part 200 can also be identified in measurement unit 106 from the image of part 200 acquired by image sensor 104. Each of the at least two measurement points within part 200 may be a point (e.g., a center point) within a marker within part 200. In the example shown in FIG. 4 , the at least two measurement points include measurement points 201 and 202.

[0052] The measurement unit 106 determines at least two distances from each of the at least two measurement points to at least two reference points on the upper surface of the substrate support 16. In this way, the measurement unit 106 obtains the above-mentioned at least four distances.

[0053] In one embodiment, the measurement unit 106 may determine a distance L1 (first distance) between the measurement point 201 (first measurement point) and the reference point 161 (first reference point). The measurement unit 106 may further determine a distance L2 (second distance) between the measurement point 202 (second measurement point) and the reference point 162 (second reference point). The measurement unit 106 may further determine a distance L3 (third distance) between the measurement point 201 (first measurement point) and the reference point 163 (third reference point). The measurement unit 106 may further determine a distance L4 (fourth distance) between the measurement point 202 (second measurement point) and the reference point 163 (third reference point). Alternatively, the measurement unit 106 may determine the distance between the measurement point 201 and the reference point 162 as the distance L3, and the distance between the measurement point 202 and the reference point 161 as the distance L4. In this case, it is not necessary to specify reference point 163. Reference points 161, 162, 163, measurement points 201, and 202 may be set so that, when part 200 is transported to the specified position, distance L1 and distance L2 are equal to each other, and distance L3 and distance L4 are equal to each other.

[0054] The control unit 108 is configured to control the robot 102 to transport the component 200 to a specified position. The control unit 108 may also be configured to control the robot 105 to move the image sensor 104 to acquire images of the upper surface of the substrate support 16 and the component 200, as described above. The control unit 108 may be composed of a computing device such as a computer or a dedicated circuit.

[0055] The control unit 108 controls the robot 102 to transport the component 200 to the specified position in accordance with the results of comparing the at least four distances (e.g., distances L1 to L4) acquired by the measurement unit 106 with each of the at least four reference distances. The at least four reference distances are distances that the control unit 108 compares with the at least four distances acquired by the measurement unit 106. The at least four reference distances are the at least four distances that the component 200 will be when transported to the specified position, and are determined in advance. The at least four reference distances are stored in the control unit 108 or in an external storage device 110 accessible by the control unit 108 in association with the identification information of the component 200.

[0056] The controller 108 controls the transfer position of the component 200 so that the comparison result satisfies the evaluation criterion. If the comparison result satisfies the evaluation criterion, the controller 108 fixes the position of the component 200 and controls the robot 102 to fix the component 200 in the substrate processing apparatus. In one embodiment, the evaluation criterion may be satisfied when each of the at least four distances matches a corresponding reference distance, or when the difference between each of the at least four distances and the corresponding reference distance is within a predetermined error range.

[0057] In the system 100, the position of the component 200 is adjusted using at least two reference points on the upper surface of the substrate support 16 of the substrate processing apparatus as absolute references. Therefore, the system 100 enables the component 200 to be assembled to the substrate processing apparatus with high accuracy and high reproducibility. Furthermore, the upper surface of the substrate support 16 is the surface on which the substrate is placed when processed in the substrate processing apparatus. Therefore, the positional accuracy of the component 200 relative to the upper surface of the substrate support 16 is important from the perspective of the accuracy and reproducibility of substrate processing. The system 100 enables the component 200 to be assembled to the substrate processing apparatus with at least two reference points on the upper surface of the substrate support 16 as absolute references, thereby enabling the accuracy of substrate processing to be improved with high reproducibility.

[0058] A method for assembling components of a substrate processing apparatus according to one exemplary embodiment will be described below with reference to Fig. 5. Fig. 5 is a flowchart of a method for assembling components of a substrate processing apparatus according to one exemplary embodiment. The assembling method shown in Fig. 5 (hereinafter referred to as "method MT") includes steps STa to STc.

[0059] In the process STa, the component 200 is transported to a designated position in the substrate processing apparatus by the robot 102. For details about the transport of the component 200 by the robot 102, please refer to the description of the system 100 above.

[0060] In the process STb, the image sensor 104 acquires an image of the upper surface of the substrate support 16 of the substrate processing apparatus and the component 200. For the acquisition of images by the image sensor 104, please refer to the description of the system 100 above.

[0061] In process STc, at least four distances are acquired by determining in measurement unit 106 the distances between at least two measurement points in component 200 and at least two reference points in the upper surface of substrate support 16 from the images acquired by image sensor 104. For details about acquiring the at least four distances in measurement unit 106, see the description of system 100 above.

[0062] In process STJ, the control unit 108 determines whether the comparison results between the at least four distances acquired by the measurement unit 106 and each of the at least four reference distances described above satisfy the evaluation criteria. If the comparison results do not satisfy the evaluation criteria, the process is repeated from process STa, and the control unit 108 controls the robot 102 to transport the part 200 to the specified position. The transport position of the part 200 is adjusted until the comparison results satisfy the evaluation criteria. For details about the control of the robot 102 by the control unit 108, see the description of the system 100 described above.

[0063] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0064] For example, the number of reference points within the substrate support 16 may be any number greater than or equal to two. The number of measurement points within the component 200 may be any number greater than or equal to two. The plurality of reference points for each of the plurality of components of the substrate processing apparatus may be different from the plurality of reference points for the other components of the plurality of components. Therefore, the at least four reference distances for each of the plurality of components may be different from the at least four reference distances for the other components of the plurality of components. The at least four reference distances for each of the plurality of components may be stored in the storage device 110 in association with the identification information of the component.

[0065] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E9] below.

[0066] [E1] A system for assembling components of a substrate processing apparatus, comprising: a robot configured to transport the component to a designated position within the substrate processing apparatus; an image sensor configured to acquire images of an upper surface of a substrate support of the substrate processing apparatus and the component; a measurement unit configured to acquire at least four distances by determining a distance between each of at least two measurement points in the component and each of at least two reference points in the upper surface of the substrate support from the images acquired by the image sensor; and a control unit configured to control the robot to transport the component to the designated position in accordance with a comparison result between the at least four distances acquired by the measurement unit and at least four predetermined reference distances, which are the at least four distances when the component is transported to the designated position.

[0067] [E2] The system for assembling components of a substrate processing apparatus described in E1, wherein the substrate support unit includes a first reference point, a second reference point, and a third reference point as the at least two reference points, and the measurement unit is configured to acquire, as the at least four distances, a first distance between a first measurement point of the at least two measurement points and a first reference point, a second distance between a second measurement point of the at least two measurement points and a second reference point, a third distance between the first measurement point and a third reference point, and a fourth distance between the second measurement point and a third reference point.

[0068] [E3] The system for assembling components of a substrate processing apparatus described in E2, wherein the first reference point and the second reference point are located on a circle having a center point of the center of the upper surface of the substrate support part as its center and are markers recognizable in the image, and the measurement part is configured to identify the center point of the circle identified from the first reference point and the second reference point as the third reference point.

[0069] [E4] The component assembly system for a substrate processing apparatus described in E3, wherein the first reference point, the second reference point, the third reference point, the first measurement point, and the second measurement point are set so that when the component is transported to the specified position, the first distance and the second distance are equal to each other, and the third distance and the fourth distance are equal to each other.

[0070] [E5] The system for assembling components of a substrate processing apparatus described in E1, wherein the substrate support unit includes a first reference point and a second reference point as the at least two reference points, and the measurement unit is configured to acquire, as the at least four distances, a distance between a first measurement point of the at least two measurement points and the first reference point, a distance between the first measurement point and the second reference point, a distance between a second measurement point of the at least two measurement points and the first reference point, and a distance between the second measurement point and the second reference point.

[0071] [E6] The system for assembling components of a substrate processing apparatus according to any one of E1 to E5, wherein the substrate support part includes an electrostatic chuck, and the upper surface of the substrate support part is an upper surface of the electrostatic chuck.

[0072] [E7] The system for assembling components of a substrate processing apparatus according to E6, wherein the substrate processing apparatus is a plasma processing apparatus having a chamber in which the substrate support is disposed.

[0073] [E8] The system for assembling components of a substrate processing apparatus according to any one of E1 to E7, further comprising another robot configured to move the image sensor, wherein the control unit is configured to control the other robot to move the image sensor to acquire the images of the upper surface of the substrate support and the components.

[0074] [E9] A method for assembling components of a substrate processing apparatus, comprising: (a) a step of transporting the component to a designated position within the substrate processing apparatus by a robot; (b) a step of acquiring images of an upper surface of a substrate support section of the substrate processing apparatus and the component by an image sensor; and (c) a step of acquiring at least four distances by a measurement section by calculating the distance between each of at least two measurement points within the component and each of at least two reference points within the upper surface of the substrate support section from the images acquired by the image sensor, wherein the robot is controlled by a control section to transport the component to the designated position in (a) depending on a comparison result between the at least four distances acquired by the measurement section and at least four predetermined reference distances, which are the at least four distances when the component is transported to the designated position.

[0075] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims.

[0076] 1... plasma processing apparatus, 10... chamber, 16... substrate support portion, 22... electrostatic chuck, 100... system, 102... robot, 104... image sensor, 106... measurement portion, 108... control portion.

Claims

1. A system for assembling components of a substrate processing apparatus comprising: a robot configured to transport the component to a designated position within the substrate processing apparatus; an image sensor configured to acquire images of an upper surface of a substrate support of the substrate processing apparatus and the component; a measurement unit configured to acquire at least four distances by determining a distance between each of at least two measurement points in the component and each of at least two reference points within the upper surface of the substrate support from the images acquired by the image sensor; and a control unit configured to control the robot to transport the component to the designated position in accordance with a comparison result between the at least four distances acquired by the measurement unit and each of at least four predetermined reference distances, which are the at least four distances when the component is transported to the designated position.

2. The component assembly system for a substrate processing apparatus as described in claim 1, wherein the substrate support unit includes a first reference point, a second reference point, and a third reference point as the at least two reference points, and the measurement unit is configured to acquire the at least four distances, a first distance between a first measurement point of the at least two measurement points and a first reference point, a second distance between a second measurement point of the at least two measurement points and a second reference point, a third distance between the first measurement point and a third reference point, and a fourth distance between the second measurement point and a third reference point.

3. A component assembly system for a substrate processing apparatus as described in claim 2, wherein the first reference point and the second reference point are located on a circle having the center point of the upper surface of the substrate support part as its center and are markers recognizable in the image, and the measurement part is configured to identify the center point of the circle identified from the first reference point and the second reference point as the third reference point.

4. A component assembly system for a substrate processing apparatus as described in claim 3, wherein the first reference point, the second reference point, the third reference point, the first measurement point, and the second measurement point are set so that, when the component is transported to the specified position, the first distance and the second distance are equal to each other, and the third distance and the fourth distance are equal to each other.

5. A component assembly system for a substrate processing apparatus as described in claim 1, wherein the substrate support unit includes a first reference point and a second reference point as the at least two reference points, and the measurement unit is configured to acquire the at least four distances, the distance between a first measurement point of the at least two measurement points and a first reference point, the distance between the first measurement point and the second reference point, the distance between a second measurement point of the at least two measurement points and the first reference point, and the distance between the second measurement point and the second reference point.

6. A system for assembling components of a substrate processing apparatus according to any one of claims 1 to 5, wherein the substrate support portion includes an electrostatic chuck, and the upper surface of the substrate support portion is an upper surface of the electrostatic chuck.

7. The assembly system for a component of a substrate processing apparatus according to claim 6, wherein the substrate processing apparatus is a plasma processing apparatus having a chamber in which the substrate support is disposed.

8. A component assembly system for a substrate processing apparatus as described in any one of claims 1 to 5, further comprising another robot configured to move the image sensor, wherein the control unit is configured to control the other robot to move the image sensor to acquire the images of the upper surface of the substrate support and the components.

9. A method for assembling parts of a substrate processing apparatus, comprising: (a) a step of transporting the part to a designated position within the substrate processing apparatus by a robot; (b) a step of acquiring images of the part and an upper surface of a substrate support part of the substrate processing apparatus by an image sensor; and (c) a step of acquiring at least four distances in a measurement unit by determining the distance between each of at least two measurement points in the part and each of at least two reference points in the upper surface of the substrate support part from the images acquired by the image sensor, wherein the robot is controlled by a control unit to transport the part to the designated position in (a) depending on a comparison result between the at least four distances acquired by the measurement unit and each of at least four predetermined reference distances which are the at least four distances when the part is transported to the designated position.

Images