X-ray detection panel, x-ray detector having same, and unit pixel for x-ray detection panel

Abstract

Disclosed are an X-ray detection panel, an X-ray detector having same, and a unit pixel of an X-ray detection panel. According to one embodiment of the present invention, the X-ray detection panel comprises a plurality of unit pixels, wherein each unit pixel includes a photodiode, a first readout thin film transistor, and a second readout thin film transistor, wherein the first and second readout thin film transistors are electrically connected to the photodiode, and are connected in series with each other.

Description

An X-ray detection panel, an X-ray detector having the same, and a unit pixel for the X-ray detection panel

[0001] The present invention relates to an X-ray detection panel having improved X-ray detection sensitivity, an X-ray detector having the same, and a unit pixel for the X-ray detection panel.

[0002] X-ray detectors are used not only as medical equipment for X-ray imaging diagnostics in hospitals and dental clinics, but also as industrial equipment for inspecting internal defects in electric vehicle batteries, semiconductors, electrical components, construction, aviation, ships, etc., inspecting loaded and unloaded goods at airports and port facilities, and as military equipment for detecting hazardous materials such as explosives.

[0003] Video X-ray detectors are used in medical and industrial equipment. Industrially, they are increasingly being used in non-destructive testing, essential for ensuring product safety and reliability, such as in electric vehicle battery and semiconductor testing. Medically, they are used in C-arm CT scans, cone-beam computed tomography (CBCT), and breast cancer diagnostic CT scans.

[0004] In video X-ray detectors, high frame rate, low image lag, and low ghost image are required to drive and acquire high-speed images.

[0005] An X-ray detector includes an X-ray detection panel, which is an image sensor. The X-ray detection panel can detect visible light using a scintillator using a photodiode.

[0006] Figure 1 is a schematic layout diagram for explaining an X-ray detection panel of a conventional video X-ray detector.

[0007] Referring to FIG. 1, a conventional X-ray detection panel includes a plurality of unit pixels (N, N+1, N+2,...), and each unit pixel includes a readout thin film transistor (Readout TFT) and a photodiode.

[0008] The readout terminal, i.e., the drain, of the readout thin film transistor is connected to the readout IC through the readout pad, and the gate is connected to the readout gate IC through the readout gate pad. The photodiode is connected to the bias voltage terminal through the bias pad.

[0009] When irradiated with X-rays, the scintillator is excited by the X-rays and emits visible light, which is then irradiated on the photodiode, generating a charge. The charge generated in the photodiode is transferred to the readout pad using the readout thin film transistor, generating an image signal.

[0010] In the case of conventional video X-ray detection panels, since the parasitic electrostatic component of the photodiode is not completely removed before and after acquiring an image, the sensitivity is low, and problems such as image delay and afterimage occur. Moreover, in conventional X-ray detection panels, the amount of current transmitted through the readout thin film transistor is considerably low, at approximately 1.0uA, so the brightness, i.e., the sensitivity, is considerably low when acquiring a digital image after analog-to-digital conversion (ADC).

[0011] In particular, when acquiring high-speed video X-ray images, as the frame rate per second increases, the X-ray exposure time for each frame becomes relatively shorter, but this also has the problem of lowering the sensitivity of the image, i.e. brightness.

[0012] To improve sensitivity, hardware digital gain can be amplified, or post-acquisition software can be used to enhance image brightness. However, improving image sensitivity by amplifying hardware digital gain also has the negative effect of increasing image noise. Furthermore, improving image brightness through software processing comes with a trade-off: resolution is reduced, and the additional processing time makes high-speed video frame acquisition difficult.

[0013] The problem to be solved by the present invention is to provide an X-ray detection panel capable of increasing sensitivity without causing adverse effects such as increased image noise, decreased resolution, or increased image processing time, an X-ray detector having the panel, and a unit pixel for the X-ray detection panel.

[0014] Another problem to be solved by the present invention is to provide an X-ray detection panel capable of increasing the readout output value of each unit pixel in the X-ray detection panel, an X-ray detector having the same, and a unit pixel for the X-ray detection panel.

[0015] Another problem to be solved by the present invention is to provide a video X-ray detection panel capable of preventing image delay or afterimage occurrence due to parasitic electrostatic components of a photodiode, an X-ray detector having the same, and a unit pixel for the X-ray detection panel.

[0016] According to one embodiment, an X-ray detection panel is disclosed. The X-ray detection panel includes a plurality of unit pixels, each unit pixel including: a photodiode; a first readout thin film transistor; and a second readout thin film transistor, wherein the first and second readout thin film transistors are electrically connected to the photodiode, and the first and second readout thin film transistors are connected in series with each other.

[0017] The sources of the first and second readout thin film transistors may be commonly connected to the photodiode, the gates of the first and second readout thin film transistors may be commonly connected to each other, and the drains of the first and second readout thin film transistors may be commonly connected to each other.

[0018] The X-ray detection panel may further include readout pads; readout gate pads; and a bias pad, wherein the readout pads are connected to drains of the first and second readout thin film transistors, the readout gate pads are connected to gates of the first and second readout thin film transistors, and the bias pad is connected to the photodiode.

[0019] In one embodiment, the gates of the first and second readout thin film transistors may be connected to the readout gate pad via a readout gate line, the drains of the first and second readout thin film transistors may be connected to the readout pad via a readout drain line, and the photodiode may be connected to the source of the second readout thin film transistor. Furthermore, each unit pixel may further include a capacitor disposed between the first readout thin film transistor and the readout gate line.

[0020] Furthermore, each unit pixel may further include a capacitor disposed between the second readout thin film transistor and the readout gate line.

[0021] In one embodiment, the gates of the first and second readout thin film transistors may be connected to the readout gate pad via a readout gate line, the photodiode may be connected to the sources of the first and second readout thin film transistors, and each unit pixel may further include a capacitor disposed between the first and second readout thin film transistors and the readout gate line and a capacitor disposed between the second readout thin film transistor and the readout gate line.

[0022] Each unit pixel may further include a reset thin film transistor, the source of which may be connected to the source of the first and second readout thin film transistors and the photodiode.

[0023] The above X-ray detection panel may further include reset gate pads; and a reset drain pad, wherein the reset gate pad may be connected to a gate of the reset thin film transistor, and the reset drain pad may be connected to a drain of the reset thin film transistor.

[0024] The sources of the first and second readout thin film transistors may be commonly connected to the photodiode, the gates of the first and second readout thin film transistors may be commonly connected to each other, and the drains of the first and second readout thin film transistors may be commonly connected to each other.

[0025] In one embodiment, the X-ray detection panel may further include readout pads; readout gate pads; and a bias pad, wherein the readout pads are connected to drains of the first and second readout thin film transistors, the readout gate pads are connected to gates of the first and second readout thin film transistors, and the bias pad is connected to the photodiode.

[0026] The gates of the first and second readout thin film transistors may be connected to the readout gate pad via a readout gate line, the drains of the first and second readout thin film transistors may be connected to the readout pad via a readout drain line, the photodiode may be connected to the sources of the first and second readout thin film transistors, and each unit pixel may further include a capacitor disposed between the first readout thin film transistor and the readout gate line.

[0027] Each unit pixel may further include a capacitor disposed between the second readout thin film transistor and the readout gate line.

[0028] In one embodiment, the gates of the first and second readout thin film transistors are connected to the readout gate pad via a readout gate line, the photodiode is connected to the sources of the first and second readout thin film transistors, and each unit pixel may further include a capacitor disposed between the first readout thin film transistor and the readout gate line and a capacitor disposed between the second readout thin film transistor and the readout gate line.

[0029] In one embodiment, the gate of the reset thin film transistor is connected to a reset gate pad via a reset gate line, the source of the reset thin film transistor is connected to the sources of the first and second readout thin film transistors and the photodiode, and each unit pixel further includes a capacitor disposed between the reset thin film transistor and the reset gate line.

[0030] In one embodiment, each unit pixel may further include a capacitor disposed between the reset thin film transistor and the reset gate line and a capacitor disposed between the first readout thin film transistor and the readout gate line.

[0031] In one embodiment, each unit pixel may further include a capacitor disposed between the reset thin film transistor and the reset gate line and a capacitor disposed between the second readout thin film transistor and the readout gate line.

[0032] In one embodiment, each unit pixel may further include a capacitor disposed between the reset thin film transistor and the reset gate line, a capacitor disposed between the first readout thin film transistor and the readout gate line, and a capacitor disposed between the second readout thin film transistor and the readout gate line.

[0033] According to one embodiment of the present invention, an X-ray detector is disclosed. The X-ray detector includes an X-ray detection panel, the X-ray detection panel includes a plurality of unit pixels, each unit pixel including a photodiode; a first readout thin film transistor; and a second readout thin film transistor, wherein the first and second readout thin film transistors are electrically connected to the photodiode, and the first and second readout thin film transistors are connected in series with each other.

[0034] In one embodiment, each unit pixel further includes a reset thin film transistor.

[0035] According to one embodiment of the present invention, a unit pixel of an X-ray detection panel is disclosed. The unit pixel includes a photodiode; a first readout thin film transistor; and a second readout thin film transistor, wherein the first and second readout thin film transistors are electrically connected to the photodiode, and the first and second readout thin film transistors are connected in series with each other.

[0036] In one embodiment, the unit pixel may further include at least one capacitor connected to the first or second readout thin film transistor.

[0037] In one embodiment, the unit pixel may further include a reset thin film transistor.

[0038] Furthermore, the unit pixel may further include at least one capacitor connected to any one of the first and second readout thin film transistors and the reset thin film transistor.

[0039] According to embodiments of the present invention, the image sensitivity, i.e., brightness, of an X-ray detection panel can be increased by increasing the readout output current. In addition, problems such as image delay or afterimages caused by parasitic electrostatic components can be solved by introducing a reset thin film transistor. In addition, noise components in the readout gate line or output line can be removed by arranging a capacitor.

[0040] Figure 1 is a schematic layout diagram for explaining an X-ray detection panel of a conventional video X-ray detector.

[0041] FIG. 2 is a schematic layout diagram for explaining an X-ray detection panel according to one embodiment of the present invention.

[0042] FIG. 3 is a schematic layout diagram illustrating an X-ray detection panel according to one embodiment of the present invention.

[0043] FIG. 4 is a schematic layout diagram illustrating an X-ray detection panel according to one embodiment of the present invention.

[0044] FIG. 5 is a schematic layout diagram illustrating an X-ray detection panel according to one embodiment of the present invention.

[0045] FIG. 6 is a schematic layout diagram illustrating an X-ray detection panel according to one embodiment of the present invention.

[0046] FIG. 7 is a schematic layout diagram illustrating an X-ray detection panel according to one embodiment of the present invention.

[0047] FIG. 8 is a schematic layout diagram illustrating an X-ray detection panel according to one embodiment of the present invention.

[0048] FIG. 9 is a schematic layout diagram illustrating an X-ray detection panel according to one embodiment of the present invention.

[0049] FIG. 10 is a schematic layout diagram illustrating an X-ray detection panel according to one embodiment of the present invention.

[0050] FIG. 11 is a schematic circuit diagram illustrating an X-ray detection panel according to one embodiment of the present invention.

[0051] FIG. 12 is a schematic layout diagram for explaining an X-ray detection panel according to one embodiment of the present invention.

[0052] FIG. 13 is a schematic layout diagram for explaining an X-ray detection panel according to one embodiment of the present invention.

[0053] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the attached drawings. The embodiments introduced below are provided as examples so that the spirit of the present disclosure can be sufficiently conveyed to those skilled in the art to which the present disclosure pertains. Therefore, the present disclosure is not limited to the embodiments described below and may be embodied in other forms. In addition, in the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience. In addition, when one component is described as being "over" or "on" another component, it includes not only cases where each part is "directly over" or "directly on" the other part, but also cases where another component is interposed between each component and another component. Like reference numbers represent like components throughout the specification.

[0054] FIG. 2 is a schematic layout diagram illustrating an X-ray detection panel of an X-ray detector according to one embodiment of the present invention. The X-ray detection panel described herein is suitable for an indirect method of detecting visible light converted by a scintillator. However, the present invention is not limited thereto, and can also be applied to a direct method X-ray detection panel that directly detects X-rays.

[0055] Referring to FIG. 2, the X-ray detection panel includes a plurality of unit pixels (N, N+1, N+2,...), and each unit pixel includes a first readout thin film transistor (Readout TFT 1), a second readout thin film transistor (Readout TFT 2), and a photodiode. In addition, the X-ray detection panel includes readout pads, readout gate pads, and bias pads connected to the plurality of unit pixels (N, N+1, N+2,...).

[0056] A plurality of unit pixels may be arranged, for example, in a matrix form, although this is not particularly limited. For example, a plurality of unit pixels may be arranged in a 5000×5000 matrix.

[0057] The first and second readout thin film transistors (Readout TFT 1 and 2) may be switching elements that use one or more of amorphous silicon, polycrystalline silicon, In-Ga-Zn-O, and In-Zn-O as a semiconductor layer. The photodiode is a photoelectric conversion element that may be composed of one or a combination of two or more of amorphous silicon, polycrystalline silicon, single crystal silicon, In-Ga-Zn-O, In-Zn-O, and In-Sn-O.

[0058] First, the connection structure of the first and second readout thin film transistors (Readout TFT 1 and 2) and the photodiode is explained using a unit pixel as an example.

[0059] The readout terminal of the first readout thin film transistor (Readout TFT 1), i.e., the drain (D1), is connected to the readout IC through the readout pad, and the gate (G1) is connected to the readout gate IC through the readout gate pad.

[0060] A readout terminal of a second readout thin film transistor (Readout TFT 2), i.e., a drain (D2), is connected to a readout IC through a readout pad, and a gate (G2) is connected to the readout gate IC through a readout gate pad. The drain (D1) may be electrically connected to the drain (D2), and the gate (G1) may be electrically connected to the gate (G2). The drain (D1) and the drain (D2) may be commonly connected to the readout pad, and the gate (G1) and the gate (G2) may be commonly connected to the readout gate pad.

[0061] The first and second readout thin film transistors (Readout TFT 1 and 2) receive a gate voltage (V) applied through the readout gate pad. Gate ) can be turned on and off.

[0062] The photodiode is connected to the bias voltage terminal V through the bias pad. Bias is connected. The anode of the photodiode can be connected to a bias pad, and the cathode can be commonly connected to a source (S1) of a first readout thin film transistor (Readout TFT 1) and a source (S2) of a second readout thin film transistor (Readout TFT 2).

[0063] A bias pad can be commonly connected to all of the plurality of unit pixels (N, N+1, N+2,...). That is, all of the plurality of photodiodes within the detection panel can be commonly connected to one bias pad. In the present embodiment, only one bias pad is illustrated, but multiple bias pads may be provided within the detection panel.

[0064] When X-rays are irradiated and photoelectric conversion occurs in the photodiode, the generated charges are accumulated in the sources (S1, S2) of the readout thin film transistors (Readout TFT 1 and 2). The readout gate voltage (V Gate ) is applied, the charges accumulated in the sources (S1, S2) of the readout thin film transistors (Readout TFT 1 and 2) are output to the readout pad through the drains (D1, D2).

[0065] Meanwhile, unit pixels arranged in the same row can be commonly connected to one readout gate pad, and unit pixels arranged in different rows can be connected to different readout gate pads. That is, in the case of unit pixels arranged in the same row, the gates (G1, G2) of the readout thin film transistors (Readout TFT 1 and 2) are commonly connected to one readout gate pad, and in the case of unit pixels arranged in different rows, the gates of the readout thin film transistors (Readout TFT 1 and 2) are connected to different readout gate pads.

[0066] Meanwhile, unit pixels arranged in the same column can be commonly connected to one readout pad, and pixels arranged in different columns can be connected to different readout pads. That is, in the case of pixels arranged in the same column, the drains (D1, D2) of the readout thin film transistors (Readout TFT 1 and 2) are commonly connected to one readout pad, and in the case of unit pixels arranged in different columns, the drains of the readout thin film transistors (Readout TFT 1 and 2) are connected to different readout pads. Therefore, unit pixels arranged in one row are connected to different readout pads.

[0067] By connecting the readout thin film transistors and photodiodes within the unit pixels arranged in a matrix as described above, the readout operation can be easily performed in units of lines, i.e., rows, and image information optimized for high-speed video can be acquired.

[0068] In the present embodiment, two readout thin film transistors (Readout TFT 1 and 2) are connected in series to a photodiode. Accordingly, the output current value of a unit pixel according to the present embodiment increases by approximately two times compared to the conventional technology using one readout thin film transistor (Readout TFT). For example, if one readout thin film transistor outputs a current of 1.0 uA, by connecting two readout thin film transistors in series, a current of approximately 2.0 uA can be output. Accordingly, an X-ray detection panel having a sensitivity, i.e., a brightness, increased by approximately two times compared to the conventional technology can be provided.

[0069] In this embodiment, two readout thin film transistors (Readout TFT 1 and 2) are illustrated and described as being connected in series, but the number of readout thin film transistors connected in series may be three or more. By increasing the number of readout thin film transistors connected in series, the output current can be further increased.

[0070] According to the present embodiment, the sensitivity of the X-ray detection panel can be increased by increasing the output current by connecting multiple readout thin film transistors in series. Therefore, unlike conventional techniques that improve image brightness by increasing the digital gain value of hardware or through image processing using software, the image brightness can be improved without causing adverse effects such as increased image noise, reduced resolution, or increased image processing time.

[0071] FIG. 3 is a schematic layout diagram illustrating an X-ray detection panel according to one embodiment of the present invention.

[0072] Referring to FIG. 3, the X-ray detection panel according to the present embodiment is generally similar to the X-ray detection panel described with reference to FIG. 2, except that the unit pixel is a capacitor (C GD ) is included.

[0073] Capacitor (C GD ) may be placed between the first readout thin film transistor (Readout TFT 1) and the readout gate line. For example, as shown in FIG. 3, the capacitor (C GD ) can be placed between the drain line and the readout gate line of the first readout thin film transistor (Readout TFT 1). Since the drains (D1, D2) and the gates (G1, G2) are electrically connected to each other, the capacitor (C GD ) is electrically connected to the drain and readout gate lines of the second readout thin film transistor (Readout TFT 2).

[0074] Capacitor (C GD ) can be arranged to reduce the noise component of the readout output signal. The capacitor may be composed of one or a combination of two or more of, for example, Si, Si-O, Si-N, and Si-ON, but the present invention is not limited thereto.

[0075] Also, the capacitor (C GD ) Instead of or in addition to the dielectric material, one or a combination of two or more of Si-O, Si-N, Si-ON may be placed between the drain (D1) and the gates (G1) and / or between the drain (D2) and the gate (G2).

[0076] FIG. 4 is a schematic layout diagram illustrating an X-ray detection panel according to one embodiment of the present invention.

[0077] Referring to FIG. 4, the X-ray detection panel according to the present embodiment is generally similar to the X-ray detection panel described with reference to FIG. 2, except that the unit pixel is a capacitor (C GS ) is included.

[0078] Capacitor (C GS ) may be placed between the second readout thin film transistor (Readout TFT 2) and the readout gate line. For example, as shown in FIG. 4, the capacitor (C GS ) can be placed between the source and the readout gate line of the second readout thin film transistor (Readout TFT 2). Since the sources (S1, S2) and the gates (G1, G2) are electrically connected to each other, the capacitor (C GS ) is also electrically connected to the source and readout gate lines of the first readout thin film transistor (Readout TFT 1).

[0079] Capacitor (C GS ) can be arranged to reduce the gate line noise component. The capacitor may be composed of one or a combination of two or more of, for example, Si, Si-O, Si-N, and Si-ON, but the present invention is not limited thereto.

[0080] Also, the capacitor (C GS ) Instead of or in addition to it, one or a combination of two or more dielectric materials, such as Si-O, Si-N, Si-ON, may be placed between the source (S1) and the gate (G1) and / or between the source (S2) and the gate (G2).

[0081] FIG. 5 is a schematic layout diagram illustrating an X-ray detection panel according to one embodiment of the present invention.

[0082] Referring to FIG. 5, the X-ray detection panel according to the present embodiment is generally similar to the X-ray detection panel described with reference to FIG. 2, except that the unit pixel is a capacitor (C GD , C GS ) is included.

[0083] Capacitor (C GD , C GS ) is a capacitor (C) described with reference to FIGS. 3 and 4. GD , C GS ) is the same, so detailed explanation is omitted to avoid duplication.

[0084] Capacitor (C GD , C GS ) can reduce the noise component of the readout output signal and the gate line noise component.

[0085] FIG. 6 is a schematic layout diagram illustrating an X-ray detection panel according to one embodiment of the present invention.

[0086] Referring to FIG. 6, the X-ray detection panel according to the present embodiment is generally similar to the X-ray detection panel described with reference to FIG. 2, except that each unit pixel further includes a reset thin film transistor (Reset TFT). Furthermore, the X-ray detection panel according to the present embodiment further includes reset gate pads and reset drain pads.

[0087] The drain (D3) of the reset thin film transistor (Reset TFT) is connected to the drain-source voltage terminal Vds through the reset drain pad, and the gate is connected to the reset gate IC through the reset gate pad. The source (S3) of the reset thin film transistor (Reset TFT) can be connected to the sources (S1, S2) of the first and second readout thin film transistors (Readout TFT 1 and 2).

[0088] The drains (D3) of the plurality of reset thin film transistors (Rest TFTs) may all be commonly connected to a single reset drain pad. In another embodiment, a plurality of reset drain pads may be provided within the X-ray detection panel, and each of the reset drain pads may be commonly connected to the drains of the plurality of reset thin film transistors within the detection panel. The plurality of reset drain pads may be arranged at upper and lower and / or left and right positions within the detection panel. By arranging a plurality of reset drain pads, the connection length between the reset drain pad and the pixel may be reduced, thereby reducing the RC delay.

[0089] Meanwhile, for unit pixels arranged in the same row, the gates of the reset thin film transistors (Reset TFTs) can be commonly connected to one reset gate pad, and for unit pixels arranged in different rows, the gates of the reset thin film transistors (Reset TFTs) are connected to different reset gate pads. The reset thin film transistor is connected to the reset gate voltage (V) applied to the gate (G3). Reset - Gate ) can be turned on and off.

[0090] By turning on the reset thin film transistor (Rest TFT), parasitic electrostatic components accumulated in the photodiode and the first and second readout thin film transistors (Readout TFT 1 and 2) can be removed.

[0091] Unit pixels (N, N+1, N+2, ...) can be reset in units of lines, i.e., rows. When a line is reset, the reset thin film transistor (Reset TFT) is switched on, and the readout thin film transistors (Readout TFT 1 and 2) are switched off. For example, a gate voltage V is applied to the gate (G3) of the reset thin film transistor (Reset TFT) by a reset gate IC. Reset-Gate When this is applied, the reset thin film transistor (TFT) is turned on, and the gates (G1, G2) of the readout thin film transistors (Readout TFT 1 and 2) are supplied with a gate voltage V by the readout gate IC. Gate This can turn off the readout thin film transistors (Readout TFT 1 and 2). Meanwhile, a bias voltage V is applied to the photodiode. Bias can be approved.

[0092] By the above line reset, residual charges in pixels connected to the reset gate pad are removed through the reset thin film transistors (Rest TFTs), so that the pixels can be reset. When a line reset is completed for one line (row), a line reset can be performed for the next line, and in this way, a reset can be performed for unit pixels in the X-ray video detection panel on a line-by-line basis.

[0093] After the reset is performed, a window time for collecting information by X-ray irradiation may be performed. In the present embodiment, the term "window time" refers to the time during which charges generated in a photodiode by X-ray irradiation accumulate. The window time may be arbitrarily set considering the charge saturation time of the photodiodes.

[0094] During the window time, the reset thin film transistor (Reset TFT) and the readout thin film transistors (Readout TFT 1 and 2) are switched off. In addition, a bias voltage V is applied to the photodiode. Bias can be approved.

[0095] As the X-ray is irradiated, photoelectric conversion is performed in the photodiode, generating charges. Since the readout thin film transistors (Readout TFT 1 and 2) and the reset thin film transistor (Reset TFT) are in the off state, the charges generated in the photodiode can be accumulated in the source of the photodiode or the readout thin film transistor (Read TFT 1 and 2).

[0096] In the readout stage, the reset thin film transistor (Reset TFT) is kept in the off state, and the readout thin film transistors (Readout TFT 1 and 2) are switched on. Meanwhile, a bias voltage V is applied to the photodiode. Bias can be approved.

[0097] In the readout stage, charges generated by the photodiode move from the sources (S1, S2) to the drains (D1, D2) of the readout thin film transistors (Readout TFTs 1 and 2) and are transferred to the readout IC through the readout pad. The readout IC can use this charge information to generate image information.

[0098] The line reset, window time, and readout steps are performed sequentially in this order, processing information for a single line. By sequentially processing information for each line, one frame of information for all pixels can be acquired. By repeating the process of processing information line by line, information for multiple frames can be acquired, allowing video to be implemented.

[0099] According to the present embodiment, by arranging a reset thin film transistor (Reset TFT) in a unit pixel, parasitic electrostatic components remaining in a photodiode and first and second readout thin film transistors can be removed, thereby solving problems such as image delay or afterimage occurring in a video X-ray detector.

[0100] FIG. 7 is a schematic layout diagram illustrating an X-ray detection panel according to one embodiment of the present invention.

[0101] Referring to FIG. 7, the X-ray detection panel according to the present embodiment is generally similar to the X-ray detection panel described with reference to FIG. 6, except that the unit pixel is a capacitor (C GD ) is included. The capacitor (C GD ) is the same as that described with reference to Fig. 3, so detailed description is omitted to avoid duplication.

[0102] FIG. 8 is a schematic layout diagram illustrating an X-ray detection panel according to one embodiment of the present invention.

[0103] Referring to FIG. 8, the X-ray detection panel according to the present embodiment is generally similar to the X-ray detection panel described with reference to FIG. 6, except that the unit pixel is a capacitor (C GS1 ) is included. The capacitor (C GS1 ) is a capacitor (C) described with reference to Fig. 4 GS ) is the same, so a detailed description thereof is omitted to avoid duplication.

[0104] FIG. 9 is a schematic layout diagram illustrating an X-ray detection panel according to one embodiment of the present invention.

[0105] Referring to FIG. 9, the X-ray detection panel according to the present embodiment is generally similar to the X-ray detection panel described with reference to FIG. 6, except that the unit pixel is a capacitor (C GD , C GS1 ) is included.

[0106] Capacitor (C GD , C GS1 ) is a capacitor (C) described with reference to FIGS. 7 and 8. GD , C GS1 ) is the same, so detailed explanation is omitted to avoid duplication.

[0107] FIG. 10 is a schematic layout diagram illustrating an X-ray detection panel according to one embodiment of the present invention.

[0108] Referring to FIG. 10, the X-ray detection panel according to the present embodiment is generally similar to the X-ray detection panel described with reference to FIG. 6, except that the unit pixel is a capacitor (C GS2 ) is included.

[0109] Capacitor (C GS2 ) can be placed between the reset thin film transistor (Reset TFT) and the reset gate line. For example, as shown in Fig. 10, the capacitor (C GS2 ) can be placed between the source (S3) of the reset thin film transistor (Reset TFT) and the reset gate line.

[0110] Capacitor (C GS2 ) can be used to reduce the noise component of the reset gate line. Capacitor (C GS2) may be composed of one or a combination of two or more of, for example, Si, Si-O, Si-N, and Si-ON, but the present invention is not limited thereto.

[0111] Also, the capacitor (C GS2 ) Instead of or in addition to it, a dielectric material, such as one or a combination of two or more of Si-O, Si-N, Si-ON, may be placed between the source (S3) and the gate (G3).

[0112] FIG. 11 is a schematic circuit diagram illustrating an X-ray detection panel according to one embodiment of the present invention.

[0113] Referring to FIG. 11, the X-ray detection panel according to the present embodiment is similar to the X-ray detection panel described with reference to FIG. 10, except that the unit pixel is a capacitor (C GD ) is included. The capacitor (C GD ) is the same as that described with reference to Fig. 7, so detailed description is omitted to avoid duplication.

[0114] FIG. 12 is a schematic layout diagram for explaining an X-ray detection panel according to one embodiment of the present invention.

[0115] Referring to FIG. 12, the X-ray detection panel according to the present embodiment is similar to the X-ray detection panel described with reference to FIG. 10, except that the unit pixel is a capacitor (C GS1 ) is included. The capacitor (C GS1 ) is the same as that described with reference to Fig. 8, so detailed description is omitted to avoid duplication.

[0116] FIG. 13 is a schematic layout diagram for explaining an X-ray detection panel according to one embodiment of the present invention.

[0117] Referring to FIG. 13, the X-ray detection panel according to the present embodiment is generally similar to the X-ray detection panel described with reference to FIG. 10, except that the unit pixel is a capacitor (C GD , C GS1 ) is included.

[0118] Capacitor (C GD , C GS1 ) is a capacitor (C) described with reference to FIGS. 7, 8, and 10. GD , C GS1 ) is the same, so detailed explanation is omitted to avoid duplication.

[0119] While various embodiments of the present invention have been described above, the present invention is not limited to these embodiments. The embodiments described above may be modified in various ways without departing from the technical spirit of the present invention.

Claims

1. In an X-ray detection panel including a plurality of unit pixels, Each unit pixel is, photodiode; a first lead-out thin film transistor; and Includes a second readout thin film transistor, The first and second readout thin film transistors are electrically connected to the photodiode, The above first and second readout thin film transistors are X-ray detection panels connected in series with each other.

2. In claim 1, The sources of the first and second readout thin film transistors are commonly connected to the photodiode, The gates of the first and second lead-out thin film transistors are commonly connected to each other, An X-ray detection panel in which the drains of the first and second readout thin film transistors are commonly connected to each other.

3. In claim 2, Leadout pads; Readout gate pads; and Including more bias pads, The above lead-out pads are connected to the drains of the first and second lead-out thin film transistors, The above lead-out gate pads are connected to the gates of the first and second lead-out thin film transistors, The above bias pad is an X-ray detection panel connected to the above photodiode.

4. In claim 3, The gates of the first and second lead-out thin film transistors are connected to the lead-out gate pad through a lead-out gate line, The drains of the first and second lead-out thin film transistors are connected to the lead-out pad through a lead-out drain line, The photodiode is connected to the source of the first and second readout thin film transistors, An X-ray detection panel, wherein each unit pixel further includes a capacitor disposed between the first readout thin film transistor and the readout gate line.

5. In claim 4, An X-ray detection panel, wherein each unit pixel further includes a capacitor disposed between the second readout thin film transistor and the readout gate line.

6. In claim 3, The gates of the first and second lead-out thin film transistors are connected to the lead-out gate pad through a lead-out gate line, The drains of the first and second lead-out thin film transistors are connected to the lead-out pad through a lead-out drain line, An X-ray detection panel, wherein each unit pixel further includes a capacitor disposed between the second readout thin film transistor and the readout gate line.

7. In claim 1, Each unit pixel further includes a reset thin film transistor, An X-ray detection panel in which the source of the reset thin film transistor is connected to the sources of the first and second readout thin film transistors.

8. In claim 7, reset gate pads; and Including a reset drain pad, The above reset gate pad is connected to the gate of the above reset thin film transistor, The above reset drain pad is an X-ray detection panel connected to the drain of the above reset thin film transistor.

9. In claim 8, The sources of the first and second readout thin film transistors are commonly connected to the photodiode, The gates of the first and second lead-out thin film transistors are commonly connected to each other, An X-ray detection panel in which the drains of the first and second readout thin film transistors are commonly connected to each other.

10. In claim 9, Leadout pads; Readout gate pads; and Including more bias pads, The above lead-out pads are connected to the drains of the first and second lead-out thin film transistors, The above lead-out gate pads are connected to the gates of the first and second lead-out thin film transistors, The above bias pad is an X-ray detection panel connected to the above photodiode.

11. In claim 10, The gates of the first and second lead-out thin film transistors are connected to the lead-out gate pad through a lead-out gate line, The drains of the first and second lead-out thin film transistors are connected to the lead-out pad through a lead-out drain line, The photodiode is connected to the source of the first and second readout thin film transistors, An X-ray detection panel, wherein each unit pixel further includes a capacitor disposed between the first readout thin film transistor and the readout gate line.

12. In claim 11, An X-ray detection panel, wherein each unit pixel further includes a capacitor disposed between the second readout thin film transistor and the readout gate line.

13. In claim 10, The gates of the first and second lead-out thin film transistors are connected to the lead-out gate pad through a lead-out gate line, The photodiode is connected to the source of the first and second readout thin film transistors, An X-ray detection panel, wherein each unit pixel further includes a capacitor disposed between the second readout thin film transistor and the readout gate line.

14. In claim 8, The gate of the above reset thin film transistor is connected to the reset gate pad through the reset gate line, The source of the above reset thin film transistor is connected to the sources of the first and second readout thin film transistors, An X-ray detection panel, wherein each unit pixel further includes a capacitor disposed between the reset thin film transistor and the reset gate line.

15. In an X-ray detector including an X-ray detection panel, The above X-ray detection panel includes a plurality of unit pixels, Each unit pixel is, photodiode; a first lead-out thin film transistor; and Includes a second readout thin film transistor, The first and second readout thin film transistors are electrically connected to the photodiode, The above first and second readout thin film transistors are X-ray detectors connected in series with each other.

16. In claim 15, Each unit pixel further comprises an X-ray detector containing a reset thin film transistor.

17. As a unit pixel of the X-ray detection panel, photodiode; a first lead-out thin film transistor; and Includes a second readout thin film transistor, The first and second readout thin film transistors are electrically connected to the photodiode, The first and second readout thin film transistors are unit pixels connected in series with each other.

18. In claim 17, A unit pixel further comprising at least one capacitor connected to the first or second readout thin film transistor.

19. In claim 17, A unit pixel further comprising a reset thin film transistor.

20. In claim 19, A unit pixel further comprising at least one capacitor connected to one of the first and second readout thin film transistors and the reset thin film transistor.

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