Light-emitting device and manufacturing method therefor, radar and electronic device

Abstract

A light-emitting device and a manufacturing method therefor, a radar and an electronic device. The light-emitting device comprises a plurality of light-emitting units (m0), wherein a first insulating layer (102) is provided in a first groove (n1) between every two light-emitting units (m0) and on the light-emitting units (m0); an insulating filling part (107) is provided on the first insulating layer (102) in the first groove (n1); and a second electrode layer (101) covers the insulating filling part (107), so that the distance between the second electrode layer (101) in the first groove (n1) and a first semiconductor layer (103) can be increased. Thus, even if a high reverse-bias voltage is applied, the high reverse-bias voltage is borne by the first insulating layer (102) and the insulating filling part (107) together; and even if the first insulating layer (102) formed in the first groove (n1) has defects or the deposition effect thereof is poor, these defects and the disadvantages can be made up for due to the presence of the insulating filling part (107), so that the capacity for bearing the high reverse-bias voltage is improved, and the first insulating layer (102) can be prevented from being broken down, thereby improving the reliability of the light-emitting device.

Description

Light-emitting device, manufacturing method thereof, radar and electronic equipment

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to the Chinese patent application filed with the State Intellectual Property Office of China on September 18, 2023, with application number 202311204360.9 and application name “A light-emitting device, its manufacturing method, radar and electronic equipment”, the entire contents of which are incorporated by reference into this application. Technical Field

[0003] The present application relates to the field of radar technology, and in particular to a light-emitting device, a manufacturing method thereof, a radar, and an electronic device. Background Art

[0004] With the advancement of science and technology, more and more scenarios require the use of laser radar (LiDAR) for detection, such as using LiDAR to perceive the surrounding environment and identify and track targets. LiDAR operates by emitting electromagnetic waves toward a target. These waves then return as echoes. Based on the emitted electromagnetic waves and the echoes, the round-trip time can be calculated, thereby depicting the target's distance and appearance. The light-emitting devices in LiDAR are generally driven by low-side drivers, which offer stronger driving capabilities and lower power consumption. However, low-side drivers can subject the light-emitting devices to a high reverse bias voltage for extended periods, posing a challenge to the reliability of the light-emitting devices and, ultimately, the radar.

[0005] Summary of the Invention

[0006] The present application provides a light-emitting device, a manufacturing method thereof, a radar, and an electronic device, so as to improve the reliability of the light-emitting device and even the radar.

[0007] In a first aspect, an embodiment of the present application provides a light-emitting device, which may include: a first electrode layer, a first semiconductor layer arranged on the first electrode layer, and a light-emitting unit, a first insulating layer, an insulating filling portion, and a second electrode layer arranged on the first semiconductor layer; there are multiple light-emitting units and they are arranged at intervals, the light-emitting units are electrically connected to the second electrode layer, and a first groove is formed in the area between the two light-emitting units, and the bottom and groove wall of the first groove, as well as the side of the light-emitting unit facing away from the first semiconductor layer are all provided with a first insulating layer; an insulating filling portion is provided on the surface of the first insulating layer in the first groove facing away from the first semiconductor layer, and the second electrode layer covers the insulating filling portion, that is, the second electrode layer can cover the insulating filling portion in the first groove. In this way, by providing an insulating filling portion on the first insulating layer in the first groove, the distance between the second electrode layer and the first semiconductor layer in the first groove can be increased. Even if a high reverse bias voltage is applied, the high reverse bias voltage is borne by the first insulating layer and the insulating filling portion together. Even if the first insulating layer formed in the first groove has defects or poor deposition effect, the presence of the insulating filling portion can make up for these defects and deficiencies, thereby increasing the ability to withstand high reverse bias voltage, and avoiding the first insulating layer from being broken down, thereby improving the reliability of the light-emitting device.

[0008] It should be understood that the number of light-emitting units is not limited here and can be set according to actual needs. The light-emitting units can be arranged in a matrix or randomly; at this time, the two light-emitting units forming the first groove can be: two adjacent light-emitting units in the row direction, two adjacent light-emitting units in the column direction, or two adjacent light-emitting units on the diagonal line. Moreover, when the second electrode layer covers the insulating filling part, it can completely cover the insulating filling part, or partially cover the insulating filling part. In addition, the light-emitting device of the above structure can be regarded as a vertical cavity surface light-emitting device. Of course, for other light-emitting devices that need to be in a reverse bias state for a long time, the concept of this solution can be adopted, that is, an insulating filling part is provided between the insulating layer and the electrode layer to increase the ability to withstand the reverse bias voltage, avoid the insulating layer from being broken down, and improve the reliability of the light-emitting device.

[0009] Furthermore, since an insulating filling portion is provided on the first insulating layer located in the first groove, and the insulating filling portion can make up for the defects and deficiencies in the first insulating layer, the thickness of the first insulating layer can be set to be thinner, such as the thickness of the first insulating layer can be set to 0.05μm to 2μm. In this way, even if the first insulating layer is set to be thinner, the presence of the insulating filling portion can still prevent the first insulating layer in the first groove from being broken down, thereby improving the reliability of the light-emitting device and reducing the thickness of the light-emitting device. In addition, since the first insulating layer can be set to be thinner, the difficulty of manufacturing the light-emitting device can be reduced, and the manufacturing cost of the light-emitting device can be reduced.

[0010] Exemplarily, the light-emitting device may further include a peripheral structure, the peripheral structure being disposed on the first semiconductor layer, the peripheral structure being a closed structure having an internal accommodation space, wherein each light-emitting unit is disposed within the accommodation space, such that the peripheral structure surrounds all of the light-emitting units; in this case, a second trench may be formed in the region between the peripheral structure and the light-emitting unit. In other words, a second trench may be formed in the region between the light-emitting unit adjacent to the peripheral structure and the peripheral structure; a first insulating layer may be disposed on a side of the peripheral structure facing away from the first semiconductor layer, as well as on the bottom and walls of the second trench; an insulating filling portion may be disposed on a surface of the first insulating layer in the second trench facing away from the first semiconductor layer, and the second electrode layer may cover both the insulating filling portion in the first trench and the insulating filling portion in the second trench. Thus, at the location of the second trench, high reverse bias voltages can still be borne by both the first insulating layer and the insulating filling portion. Even if the first insulating layer formed in the second trench has defects or poor deposition, the presence of the insulating filling portion can compensate for these defects and deficiencies, thereby increasing the ability of the first insulating layer in the second trench to withstand high reverse bias voltages, preventing breakdown of the first insulating layer in the second trench, and further improving the reliability of the light-emitting device.

[0011] Furthermore, when the second electrode layer includes a connecting electrode disposed in the region where the peripheral structure is located, and the light-emitting device further includes a control circuit, and the control circuit is electrically connected to the connecting electrode, an insulating filling portion may also be provided between the first insulating layer disposed above the peripheral structure and the connecting electrode. This also allows the second electrode layer to cover the insulating filling portion, and also increases the distance between the connecting electrode and the first insulating layer. The insulating filling portion compensates for defects and deficiencies in the first insulating layer above the peripheral structure, allowing the voltage to be borne by both the first insulating layer and the insulating filling portion, thereby increasing the voltage-bearing capacity of the first insulating layer above the peripheral structure and preventing breakdown of the first insulating layer above the peripheral structure, thereby further improving the reliability of the light-emitting device. Furthermore, experimental testing has found that the probability of breakdown occurring under high reverse bias voltage in a light-emitting device provided with an insulating filling portion can be effectively reduced, even to zero, thereby effectively resolving the breakdown problem under high reverse bias voltage.

[0012] If the control circuit is located in the area where the peripheral structure is located, it means that the control circuit and the light-emitting unit are located on the same substrate, thus achieving an integrated design of the light-emitting device. Furthermore, since the peripheral structure is not used for light emission, locating the control circuit in the area where the peripheral structure is located can avoid occupying the area where the light-emitting unit is located, thereby avoiding affecting the light-emitting effect of the light-emitting device. Furthermore, the control circuit can be located on the side of the connecting electrode facing away from the peripheral structure, with a third insulating layer disposed between the control circuit and the connecting electrode. The control circuit and the connecting electrode are electrically connected via a through-hole in the third insulating layer, thereby achieving electrical connection between the control circuit and the connecting electrode.

[0013] Of course, the control circuit and the light-emitting unit can also be arranged on different substrates. In other words, the light-emitting device can include a first division and a second division. The peripheral structure, the light-emitting unit, the first insulating layer, the insulating filling portion, the first electrode layer, the second electrode layer and the first semiconductor layer can all be arranged in the first division, and the control circuit is arranged in the second division. This can avoid the control circuit occupying the area of ​​the first division, so that the first division can reserve more space for the light-emitting unit, thereby improving the resolution of the light-emitting device. At this time, the first division and the second division can be connected by a flip chip film or other structure to achieve a binding connection between the control circuit and the connecting electrode. Furthermore, the connecting electrode can be a pad, and the structural form of the pad can be designed according to actual needs and is not limited here.

[0014] Furthermore, illustratively, the structures of the light-emitting unit and the peripheral structure can be substantially similar. For example, both the light-emitting unit and the peripheral structure can include: a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked in a direction from the first electrode layer to the second electrode layer; wherein the light-emitting unit can further include: an auxiliary electrode disposed on a surface of the second semiconductor layer facing away from the light-emitting layer, the auxiliary electrode in each light-emitting unit being connected to the second electrode layer, thereby electrically connecting the light-emitting unit and the second electrode layer. When the second electrode layer is disposed over the entire surface, the second electrode layer can be provided with multiple openings, each corresponding to a light-emitting unit, and each light-emitting unit can emit light outward through the corresponding opening. The number of openings corresponding to each light-emitting unit can be one or more, and is not limited here, as long as the light-emitting unit can emit light outward through the corresponding opening. It should be understood that the second electrode layer being disposed over the entire surface can be understood as: the second electrode layer being disposed over the entire surface above the first semiconductor layer, such that each light-emitting unit, the peripheral structure, the first insulating layer, and the insulating filling portion are all disposed between the first semiconductor layer and the second electrode layer, and the connecting electrode can be considered as the portion of the second electrode layer located above the peripheral structure. Furthermore, since the peripheral structure does not need to emit light outward, there is no need to provide an auxiliary electrode, and the second electrode layer does not need to be provided with an opening in the area where the peripheral structure is located, thereby simplifying the structure of the light-emitting device.

[0015] For light-emitting devices, the polarity of the charge transmitted by the first semiconductor layer and the second semiconductor layer can be different. For example, the charge transmitted by the first semiconductor layer can be a positive charge, and the corresponding charge transmitted by the second semiconductor layer is a negative charge. In this way, the first semiconductor layer can provide positive charge to the light-emitting layer, and the second semiconductor layer can provide negative charge to the light-emitting layer. The positive charge and the negative charge meet in the light-emitting layer to generate photons and emit light. Of course, the charge transmitted by the first semiconductor layer can also be a negative charge, and the corresponding charge transmitted by the second semiconductor layer is a positive charge. In this case, the first semiconductor layer can provide negative charge to the light-emitting layer, and the second semiconductor layer can provide positive charge to the light-emitting layer. The positive charge and the negative charge meet in the light-emitting layer to generate photons and emit light. Among them, the materials for making the first semiconductor layer, the second semiconductor layer and the light-emitting layer can be selected according to actual needs, and are not limited here. As long as the materials for making the first semiconductor layer, the second semiconductor layer and the light-emitting layer can be realized, they all fall within the scope of protection of the embodiments of the present application.

[0016] In the light-emitting device, a second insulating layer may be further provided between the second electrode layer and the insulating filling portion, such that the insulating filling portion is provided between the first insulating layer and the second insulating layer. When the insulating filling portion is made of a polymer material and the second insulating layer is made of an inorganic insulating material, the second insulating layer can increase the adhesion between the insulating filling portion and the second electrode layer, thereby preventing the insulating filling portion from separating from the second electrode layer due to poor adhesion when the insulating filling portion and the second electrode layer are in direct contact, thereby improving the reliability of the light-emitting device. Of course, when the first insulating layer is made of an inorganic insulating material, the first insulating layer can also increase the adhesion between the insulating filling portion and the first semiconductor layer, thereby improving the reliability of the light-emitting device.

[0017] The first insulating layer and the second insulating layer may be made of the same material, and the material may be an inorganic insulating material, such as but not limited to SiN, SiO2, or TiN, etc., which may be selected according to actual conditions and is not limited here. The material of the insulating filling portion may include: an insulating material containing at least one of C, O, and Si, such as but not limited to: a polymer material or an inorganic insulating material. The polymer material may include but is not limited to: polybenzoxazole, polyimide, or benzocyclobutene, etc., and the inorganic insulating material may include but is not limited to: aluminum oxide, silicon oxynitride, silicate, or nitrate, etc., which may be selected according to actual conditions and is not limited here.

[0018] For example, the thickness of the insulating filling portion can be set to 3μm to 10μm, and the thickness of the insulating filling portion can be set according to factors such as the location of the setting, the requirements for the breakdown voltage, and the production cost. For example, if the breakdown voltage requirement is high, the thickness of the insulating filling portion can be set slightly larger; if the breakdown voltage requirement is not high, but the production cost requirement is high, the thickness of the insulating filling portion can be set slightly smaller; for the insulating filling portion provided between the connecting electrode and the first insulating layer, when the connecting electrode is used as a pad, since the pad usually needs to be welded, the insulating filling portion can be set thicker to avoid damaging the first insulating layer under the connecting electrode during welding; or, when the control circuit is provided on the side of the connecting electrode away from the peripheral structure, and the control circuit and the connecting electrode are connected through a through hole, the insulating filling portion can be set slightly thinner to avoid the thickness of the light-emitting device being too large, thereby avoiding increasing the volume of the light-emitting device, and because the thickness of the insulating filling portion is small, the production cost can also be reduced. Of course, no matter where the insulating filling portion is provided, the greater the thickness of the insulating filling portion, the greater the voltage tolerance, thereby making the light-emitting device more reliable.

[0019] In the second aspect, the embodiments of the present application also provide a method for manufacturing a light-emitting device, which can be used to manufacture a light-emitting device as described in the first aspect and any embodiment of the first aspect. The manufacturing method may include: forming a first electrode layer; forming a first semiconductor layer on the first electrode layer; forming a plurality of light-emitting units spaced apart on the first semiconductor layer, and forming a first groove in the area between two light-emitting units; forming a first insulating layer at least on the bottom and wall of the first groove, and on the light-emitting units; forming an insulating filling portion on at least the first insulating layer in the first groove; forming a second electrode layer so that the second electrode layer covers the insulating filling portion, and the second electrode layer is electrically connected to the light-emitting units. In this way, by providing an insulating filling portion on the first insulating layer in the first groove, the distance between the second electrode layer and the first semiconductor layer in the first groove can be increased. Even if a high reverse bias voltage is applied, the high reverse bias voltage is borne by the first insulating layer and the insulating filling portion together. Even if the first insulating layer formed in the first groove has defects or poor deposition effect, the presence of the insulating filling portion can make up for these defects and deficiencies, thereby increasing the ability to withstand high reverse bias voltage, and avoiding the first insulating layer from being broken down, thereby improving the reliability of the light-emitting device.

[0020] The insulating filling portion may be formed in the following two ways:

[0021] Method 1: A liquid insulating material is deposited on the first insulating layer, at least within the first trench, to form an initial film; the initial film is then cured to form a solid insulating filling portion. When using a liquid insulating material to form the insulating filling portion, due to its good fluidity, the insulating material can be well filled into every corner of the first insulating layer before curing, thereby filling holes, gaps, and defects in the first insulating layer. It can also mask impurities in the first insulating layer, effectively compensating for defects and deficiencies in the first insulating layer, improving its breakdown resistance and voltage resistance, and thus improving the reliability of the light-emitting device. Depositing the liquid insulating material can be achieved by spin coating, and by controlling the spin coating speed, the thickness of the initial film, and thus the thickness of the insulating filling portion, can be controlled. For example, a higher spin speed results in a smaller initial film thickness and a smaller insulating filling portion thickness, and vice versa. In this method, the liquid insulating material can be a liquid polymer material.

[0022] Method 2: Using a vapor deposition method, an insulating material is deposited at least on the first insulating layer in the first trench to form a solid insulating filling portion. When using the vapor deposition method, the insulating material can be processed into gas-phase atoms or molecules. Due to the small size of the gas-phase atoms or molecules, they can be well filled into the holes, gaps and defects of the first insulating layer, and can also cover the impurities in the first insulating layer, so that the defects and deficiencies in the first insulating layer can be well compensated, and the anti-breakdown capability and voltage resistance can be improved, thereby improving the reliability of the light-emitting device. In this method 2, the insulating material used can be an inorganic insulating material, such as aluminum oxide, silicon oxynitride, silicate or nitrate.

[0023] Of course, in actual situations, when making the insulating filling part, you can choose to adopt method one or method two according to actual needs to meet the design needs of different application scenarios.

[0024] Exemplarily, the manufacturing method may further include: forming a peripheral structure surrounding all light-emitting units when forming the light-emitting units; that is, the peripheral structure may be formed while the light-emitting units are formed, so that the light-emitting units and the peripheral structure may be obtained in the same manufacturing process. A second groove is provided between the peripheral structure and the light-emitting units, so that the first insulating layer may be provided not only in the first groove and on the light-emitting units, but also on the bottom and walls of the second groove, and on the peripheral structure. In this case, when forming the insulating filling portion, the method may specifically include: forming an insulating filling portion on the first insulating layer in the first and second grooves, and on at least a portion of the first insulating layer located in the area where the peripheral structure is located. This can avoid the phenomenon of breakdown of the first insulating layer in the first and second grooves, and the first insulating layer on the peripheral structure, thereby improving the reliability of the light-emitting device through the insulating filling portion.

[0025] In addition, the manufacturing method may further include: after forming the insulating filling part and before forming the second electrode layer, forming a second insulating layer on the insulating filling part, so that the insulating filling part is arranged between the first insulating layer and the second insulating layer, and the insulating filling part contacts the second electrode layer through the second insulating layer, thereby improving the bonding strength between the insulating filling part and the second electrode layer, thereby improving the reliability of the light-emitting device.

[0026] Furthermore, forming the second electrode layer may specifically include: if a second insulating layer is provided, depositing a conductive layer on the entire surface so that the conductive layer covers the light-emitting unit, the peripheral structure, and the second insulating layer; and then patterning the conductive layer to form openings in the conductive layer corresponding to the light-emitting unit, thereby forming the second electrode layer. The method for depositing the conductive layer may include, but is not limited to, electroplating, vapor deposition, or the like.

[0027] It should be understood that since the principle of solving the problem by the light-emitting device produced by this manufacturing method is similar to the principle of solving the problem by the aforementioned light-emitting device, the implementation and technical effects of this manufacturing method can refer to the implementation and technical effects of the aforementioned light-emitting device, and the repeated parts will not be repeated.

[0028] In a third aspect, embodiments of the present application further provide a radar, which may include: a detector, a controller, and a light-emitting device as described in the first aspect and any of the embodiments of the first aspect above; wherein the light-emitting device is configured to: emit electromagnetic waves toward a target under the control of the controller; the detector is configured to: receive echoes reflected from the target and transmit them to the controller; and the controller is configured to: determine target information based on the electromagnetic waves emitted by the light-emitting device and the echoes detected by the detector. In this way, based on the improved reliability of the light-emitting device, the reliability of the radar can also be improved, and the accuracy of radar detection information can also be improved, reducing misjudgments. It should be understood that the target information determined by the controller may include: target location information, target topography information, target movement speed, and other target-related information. Furthermore, light is an electromagnetic wave, or in other words, light is a radiation form of electromagnetic waves, so the light-emitting device emitting light is essentially the light-emitting device emitting electromagnetic waves.

[0029] Exemplarily, the detector can be a device capable of detecting echoes, and the specific structure of the device can be any structure known to those skilled in the art that can realize the function of the detector, which is not limited here; and the controller can be a device with control functions such as a central processing unit (CPU) and a microcontroller (MCU), which can be selected according to actual needs and is not limited here.

[0030] Moreover, the radars in the embodiments of the present application can be divided into over-the-horizon radars, microwave radars, millimeter-wave radars, and lidars according to the frequency bands of electromagnetic waves. In the case of an over-the-horizon radar, the electromagnetic waves emitted by the light-emitting device belong to the over-the-horizon frequency band; in the case of a microwave radar, the electromagnetic waves emitted by the light-emitting device belong to the microwave frequency band; in the case of a millimeter-wave radar, the electromagnetic waves emitted by the light-emitting device belong to the millimeter-wave frequency band; and in the case of a lidar, the electromagnetic waves emitted by the light-emitting device belong to the laser frequency band.

[0031] It should be understood that since the principle of solving the problem by the radar is similar to the principle of solving the problem by the aforementioned light-emitting device, the implementation and technical effects of the radar can refer to the implementation and technical effects of the aforementioned light-emitting device, and the repeated parts will not be repeated.

[0032] In a fourth aspect, embodiments of the present application further provide an electronic device, which may include: a control device, and a radar as described in the third aspect and any embodiment thereof, wherein the radar is disposed on the control device. The control device may be a movable device or a fixed device. The movable device may include, but is not limited to, intelligent transportation equipment, such as vehicles, drones, unmanned transport vehicles, and robots. The fixed device may include, but is not limited to, intelligent communication equipment, smart home devices, and intelligent manufacturing equipment, such as measurement and control stations.

[0033] It should be understood that since the principle of solving the problem by the electronic device is similar to the principle of solving the problem by the aforementioned radar, the implementation and technical effects of the electronic device can refer to the implementation and technical effects of the aforementioned radar, and the repeated parts will not be repeated. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] FIG1 is a schematic structural diagram of an electronic device provided in an embodiment of the present application;

[0035] FIG2 is a schematic diagram of the structure of a radar provided in an embodiment of the present application;

[0036] FIG3 is a schematic diagram of the working principle of a radar provided in an embodiment of the present application;

[0037] FIG4 is a circuit structure diagram of a light-emitting device provided in an embodiment of the present application;

[0038] FIG5 is a top view of a light emitting device provided in an embodiment of the present application;

[0039] FIG6 is a cross-sectional view along the x1-x2 direction in FIG5;

[0040] FIG7 is a schematic diagram of the working principle of the insulating filling portion provided in an embodiment of the present application;

[0041] FIG8 is a cross-sectional view taken along the x3-x4 direction in FIG5;

[0042] FIG9 is a cross-sectional view of a portion of the structure shown in FIG5 along the x1-x2 direction;

[0043] FIG10 is another cross-sectional view along the x3-x4 direction in FIG5;

[0044] FIG11 is a top view of another light emitting device provided in an embodiment of the present application;

[0045] FIG12 is a diagram showing the test results of the reverse bias leakage current of the light emitting device provided in an embodiment of the present application;

[0046] FIG13 is a flow chart of a method for manufacturing a light-emitting device provided in an embodiment of the present application;

[0047] FIG14 is a flow chart of another method for manufacturing a light-emitting device provided in an embodiment of the present application.

[0048] Reference numerals:

[0049] 100-light-emitting device, 200-controller, 300-detector, 101-second electrode layer, 102-first insulating layer, 103-first semiconductor layer, 104-second insulating layer, 105-third insulating layer, 106-first electrode layer, 107-insulating filling part, 110-DC voltage source, 111, 112-switches, 114-capacitor, 115-driver, 116-transistor, 117-node, 120-impurity particles, 121-hole, m0-light-emitting unit, m01-light-emitting layer, m02-second semiconductor layer, m03-auxiliary electrode, m1-peripheral structure, m2-connecting electrode, m3-control circuit, m4-opening, m5-chip-on-film, n1-first trench, n2-second trench, n11 trench bottom, n12 trench wall, f1-first subdivision, f2-second subdivision. DETAILED DESCRIPTION

[0050] In order to make the purpose, technical solutions and advantages of this application clearer, this application will be further described in detail below with reference to the accompanying drawings.

[0051] It should be noted that the same reference numerals in the drawings of this application represent the same or similar structures, and thus their repeated description will be omitted. The words expressing positions and directions described in this application are all explained using the drawings as examples, but they can be modified as needed, and such modifications are included in the scope of protection of this application. The drawings of this application are only for illustrating relative positional relationships and do not represent true proportions.

[0052] In order to facilitate understanding of the technical solution provided by the embodiments of the present application, its application scenario is first explained below.

[0053] Radar can be widely used in various electronic devices. Figure 1 illustrates a schematic diagram of the structure of a radar when used in an electronic device. As shown in Figure 1, the electronic device includes a control device and a radar, with the radar being mounted on the control device. The control device can be either a mobile device or a fixed device. Mobile devices include, but are not limited to, intelligent transportation equipment such as vehicles, drones, unmanned transport vehicles, and robots. Fixed devices include, but are not limited to, intelligent communication devices, smart home devices, and intelligent manufacturing equipment, such as measurement and control stations.

[0054] In an optional application scenario of the present application, the radar can be installed on a mobile device. For example, in the case where the radar is used in an autonomous driving scenario or in a connected car scenario, the radar can be installed on a vehicle and used as a vehicle-mounted radar, as shown in Figure 1. For another example, the radar can be installed on an aircraft and used as an airborne radar. In an optional application scenario of the present application, the radar can also be installed on a mobile platform, such as a satellite. In this case, the radar requires the assistance of other devices in the mobile platform to determine its current position and steering information, so as to ensure the availability of the measurement data. In an optional application scenario of the present application, the radar can also be installed on a fixed platform. For example, the radar can be installed on a road side unit (RSU), a rooftop, or a base station. For the scenario where the radar is installed on a fixed platform, the radar requires the assistance of other devices in the fixed platform to determine its current position and steering information, so as to ensure the availability of the measurement data. In addition, the radar in the present application can also be applied to other possible scenarios, which are not listed here one by one.

[0055] Furthermore, radars can include over-the-horizon radars, microwave radars, millimeter-wave radars, lidars, and other radars, depending on the frequency band of the electromagnetic waves they emit. Regardless of the type of radar, the structures included are generally similar. FIG2 exemplifies a schematic structural diagram of a radar provided by the present application. Referring to FIG2 , the radar includes a light-emitting device 100, a detector 300, and a controller 200. The light-emitting device 100 is configured to, under the control of the controller 200, emit electromagnetic waves toward a target; the detector 300 is configured to receive echoes reflected from the target and transmit them to the controller 200; and the controller 200 is configured to determine target information based on the electromagnetic waves emitted by the light-emitting device 100 and the echoes detected by the detector 300. Specifically, referring to the schematic diagram shown in FIG3 , the radar can emit electromagnetic waves toward a target. The electromagnetic waves, upon irradiating the target, return as echoes. Based on the emitted electromagnetic waves and the echoes, the round-trip time of the waves can be calculated, thereby delineating the distance and topography of the target. The determined target information may include, but is not limited to, the target's location, topography, and speed. It should be understood that the light emitted by the light emitting device is an electromagnetic wave, and the type of electromagnetic wave emitted by the light emitting device can be controlled by the controller.

[0056] Light-emitting devices are generally driven by two methods: high-side drive and low-side drive. High-side drive is a more mature solution, but its performance is relatively average. Low-side drive offers excellent performance, but it can cause the light-emitting device to be in a high reverse bias voltage state for a long period of time, thus posing a challenge to the long-term reverse bias reliability of the light-emitting device. Referring to the circuit structure diagram of the light-emitting device shown in Figure 4, the specific low-side drive process may include:

[0057] When the switch 111 is closed, the switch 112 is opened, and the driver 115 controls the transistor 116 to be opened, the voltage signal provided by the DC voltage source 110 is provided to the capacitor 114 to charge the capacitor 114; when the switch 111 is opened, the switch 112 is closed, and the driver 115 controls the transistor 116 to be closed, the capacitor 114, the light-emitting unit m0 and the ground terminal GND form a path, the capacitor 114 discharges, and provides a first voltage to the positive electrode of the light-emitting unit m0, and the ground terminal GND provides a second voltage (such as 0V) to the negative electrode of the light-emitting unit m0. When the first voltage is greater than the second voltage, the light-emitting unit m0 emits light. When the light-emitting units m0 are connected in parallel, each light-emitting unit m0 emits light in turn, so when the first light-emitting unit m0 on the left side of Figure 4 emits light, the other light-emitting units m0 are in a non-lighting state, so that each light-emitting unit m0 can illuminate targets in different areas, realizing the partition scanning process.

[0058] However, when the first light-emitting unit m0 on the left side in FIG4 emits light and the other light-emitting units m0 are in a non-light-emitting state, the node 117 has a certain positive potential, and the potential of the positive pole of the other light-emitting units m0 is close to the second voltage such as 0V, so that the first light-emitting unit m0 on the left side in FIG4 is in a forward-biased state, while the other light-emitting units m0 are in a reverse-biased state. The current cannot pass through the other light-emitting units m0, and a voltage difference is formed at both ends of the other light-emitting units m0. If the voltage difference is large and is in a high reverse-biased state for a long time, it poses a greater challenge to the reliability of the light-emitting device.

[0059] Based on this, the present application provides a light-emitting device, a manufacturing method thereof, a radar, and an electronic device to improve the reliability of the light-emitting device and even the radar.

[0060] Figures 5 and 6 exemplarily show a schematic structural diagram of a light-emitting device provided in an embodiment of the present application. As shown in Figures 5 and 6, the light-emitting device may include: a first electrode layer 106, a first semiconductor layer 103 arranged on the first electrode layer 106, and a light-emitting unit m0, a first insulating layer 102, an insulating filling portion 107 and a second electrode layer 101 arranged on the first semiconductor layer 103; there are multiple light-emitting units m0 and they are arranged at intervals, the light-emitting units m0 are electrically connected to the second electrode layer 101, and a first groove n1 is formed in the area between the two light-emitting units m0, and the groove bottom n11 and groove wall n12 of the first groove n1, as well as the side of the light-emitting unit m0 facing away from the first semiconductor layer 103 are all provided with the first insulating layer 102; the surface of the first insulating layer 102 in the first groove n1 facing away from the first semiconductor layer 103 is provided with an insulating filling portion 107, and the second electrode layer 101 covers the insulating filling portion 107 in the first groove n1. It should be understood that the area filled with oblique lines in FIG. 5 represents the first trench n1 , and the area filled with sparse black dots represents the second trench n2 .

[0061] That is, as shown in FIG7 , FIG7 (a) shows that the insulating filling portion 107 can cover the impurity particles 120 in the first insulating layer 102, FIG7 (b) shows that the insulating filling portion 107 can fill the hole 121 in the first insulating layer 102, and FIG7 (c) shows that the reverse bias voltage is borne by both the first insulating layer 102 and the insulating filling portion 107. It should be understood that the reverse bias voltage borne by the first insulating layer 102 and the insulating filling portion 107 is not limited to 50V, and 50V is used as an example here for illustration. Thus, by providing the insulating filler portion 107, the distance between the second electrode layer 101 and the first semiconductor layer 103 within the first trench n1 can be increased. Even if a high reverse bias voltage is applied, the high reverse bias voltage is borne by both the first insulating layer 102 and the insulating filler portion 107. Even if the first insulating layer 102 formed within the first trench n1 has defects or poor deposition, the presence of the insulating filler portion 107 can compensate for these defects and deficiencies, thereby increasing the ability to withstand high reverse bias voltages and preventing breakdown of the first insulating layer 102, thereby improving the reliability of the light-emitting device. In particular, when the thickness d1 of the insulating filler portion 107 is large, such as when the thickness d1 is greater than 5 μm, the insulating filler portion 107 and the first insulating layer 102 can withstand a voltage of up to 200 V, effectively improving the withstand voltage capability of the light-emitting device.

[0062] Furthermore, since an insulating filling portion 107 is provided on the first insulating layer 102 located in the first groove n1, and the insulating filling portion 107 can make up for the defects and deficiencies in the first insulating layer 102, the thickness d2 of the first insulating layer 102 can be set thinner, such as the thickness d2 of the first insulating layer 102 can be set to 0.05μm to 2μm. In this way, even if the first insulating layer 102 is set thinner, the presence of the insulating filling portion 107 can still prevent the first insulating layer 102 in the first groove n1 from being punctured, thereby improving the reliability of the light-emitting device and reducing the thickness of the light-emitting device. In addition, since the first insulating layer 102 can be set thinner, the difficulty of manufacturing the light-emitting device can be reduced, and the manufacturing cost of the light-emitting device can be reduced.

[0063] For example, as shown in FIG8 , the light-emitting device may further include a peripheral structure m1 disposed on the first semiconductor layer 103. The peripheral structure m1 is a closed structure having an internal accommodation space. Each light-emitting unit m0 is disposed within the accommodation space, such that the peripheral structure m1 surrounds all of the light-emitting units m0. In this case, the region between the peripheral structure m1 and the light-emitting units m0 may form a second trench n2. In other words, the region between the light-emitting units m0 adjacent to the peripheral structure m1 and the peripheral structure m1 forms the second trench n2. The first insulating layer 102 is disposed on the side of the peripheral structure m1 facing away from the first semiconductor layer 103, as well as on the bottom n11 and walls n12 of the second trench n2. In other words, the first insulating layer 102 covers the light-emitting units m0, the peripheral structure m1, and the exposed regions of the surface of the first semiconductor layer 103 that are not blocked by the light-emitting units m0 and the peripheral structure m1. Accordingly, the second electrode layer 101 may cover the first insulating layer 102 and the insulating filler portion 107, thereby providing the entire surface of the second electrode layer 101. It should be understood that the second electrode layer 101 is arranged in an entire surface, which can be understood as: the second electrode layer 101 is arranged in an entire surface on the first semiconductor layer 103, so that each light-emitting unit m0, the peripheral structure m1, the first insulating layer 102 and the insulating filling part 107 are all arranged between the first semiconductor layer 103 and the second electrode layer 101.

[0064] Furthermore, as shown in FIG8 , the structures of the light-emitting unit m0 and the peripheral structure m1 can be substantially similar. For example, the light-emitting unit m0 and the peripheral structure m1 can both include: a first semiconductor layer 103, a light-emitting layer m01, and a second semiconductor layer m02 stacked along a direction from the first electrode layer 106 to the second electrode layer 101, i.e., the y-direction; wherein the light-emitting unit m0 can further include: an auxiliary electrode m03 disposed on a surface of the second semiconductor layer m02 facing away from the light-emitting layer m01, the auxiliary electrode m03 in each light-emitting unit m0 being connected to the second electrode layer 101, thereby electrically connecting the light-emitting unit m0 to the second electrode layer 101. When the second electrode layer 101 is disposed on the entire surface, in order for the light-emitting unit m0 to emit light outward, a plurality of openings m4 can be provided in the second electrode layer 101, the openings m4 being disposed corresponding to the light-emitting unit m0, and each light-emitting unit m0 can emit light outward through the corresponding opening m4. The number of openings m4 corresponding to each light-emitting unit m0 can be one or more, and is not limited here, as long as the light-emitting unit m0 can emit light outward through the corresponding opening m4. Since the peripheral structure m1 does not need to emit light outward, there is no need to provide an auxiliary electrode m03, and the second electrode layer 101 does not need to provide an opening m4 in the area where the peripheral structure m1 is located, so as to simplify the structure of the light-emitting device.

[0065] For light-emitting devices, the polarity of the charges transmitted by the first semiconductor layer 103 and the second semiconductor layer m02 can be different. For example, the charge transmitted by the first semiconductor layer 103 can be a positive charge, and the corresponding charge transmitted by the second semiconductor layer m02 is a negative charge. In this way, the first semiconductor layer 103 can provide positive charges to the light-emitting layer m01, and the second semiconductor layer m02 can provide negative charges to the light-emitting layer m01. The positive and negative charges meet in the light-emitting layer m01 to generate photons and emit light. Of course, the charge transmitted by the first semiconductor layer 103 can also be a negative charge, and the corresponding charge transmitted by the second semiconductor layer m02 is a positive charge. In this case, the first semiconductor layer 103 can provide negative charges to the light-emitting layer m01, and the second semiconductor layer m02 can provide positive charges to the light-emitting layer m01. The positive and negative charges meet in the light-emitting layer m01 to generate photons and emit light. Among them, the materials for making the first semiconductor layer 103, the second semiconductor layer m02 and the light-emitting layer m01 can be selected according to actual needs and are not limited here. As long as the materials for making the first semiconductor layer 103, the second semiconductor layer m02 and the light-emitting layer m01 can be realized, they all fall within the protection scope of the embodiments of this application.

[0066] In the light-emitting device, as shown in FIG9 , a second insulating layer 104 may be further provided between the second electrode layer 101 and the insulating filling portion 107, such that the insulating filling portion 107 is provided between the first insulating layer 102 and the second insulating layer 104. When the insulating filling portion 107 is made of a polymer material and the second insulating layer 104 is made of an inorganic insulating material, the second insulating layer 104 can increase the adhesion between the insulating filling portion 107 and the second electrode layer 101, thereby preventing the insulating filling portion 107 from separating from the second electrode layer 101 due to poor adhesion when the insulating filling portion 107 and the second electrode layer 101 are in direct contact, thereby improving the reliability of the light-emitting device. Of course, when the first insulating layer 102 is made of an inorganic insulating material, the first insulating layer 102 can also increase the adhesion between the insulating filling portion 107 and the first semiconductor layer 103, thereby improving the reliability of the light-emitting device.

[0067] The first insulating layer 102 and the second insulating layer 104 may be made of the same material, and the material may be an inorganic insulating material, such as but not limited to SiN, SiO2, or TiN, etc., which may be selected according to actual conditions and is not limited here. The insulating filler 107 may be made of an insulating material containing at least one of C, O, and Si, such as but not limited to a polymer material or an inorganic insulating material. The polymer material may include but is not limited to polybenzoxazole, polyimide, or benzocyclobutene, etc., and the inorganic insulating material may include but is not limited to aluminum oxide, silicon oxynitride, silicate, or nitrate, etc., which may be selected according to actual conditions and is not limited here.

[0068] For example, the thickness d1 of the insulating filling portion 107 can be set to 3 μm to 10 μm, and the thickness d1 of the insulating filling portion 107 can be set based on factors such as the location of the insulating filling portion 107, the breakdown voltage requirement, and the manufacturing cost. For example, if the breakdown voltage requirement is high, the thickness d1 of the insulating filling portion 107 can be set slightly larger; if the breakdown voltage requirement is not high but the manufacturing cost requirement is high, the thickness d1 of the insulating filling portion 107 can be set slightly smaller.

[0069] Figure 10 exemplarily shows a schematic structural diagram of a light-emitting device provided in an embodiment of the present application. As shown in Figure 10, the structure of the light-emitting device in this embodiment is basically similar to that of the light-emitting device in the first embodiment described above, except that: in addition to providing an insulating filling portion 107 in the first groove, an insulating filling portion 107 may also be provided in the second groove n2, or an insulating filling portion 107 may also be provided on the peripheral structure m1, or an insulating filling portion 107 may be provided both in the second groove n2 and on the peripheral structure m1.

[0070] For example, in addition to providing an insulating filling portion 107 within the first trench, an insulating filling portion 107 is also provided within the second trench n2: the insulating filling portion 107 is provided on the surface of the first insulating layer 102 within the second trench n2 on the side facing away from the first semiconductor layer 103, and the second electrode layer 101 covers not only the insulating filling portion 107 within the first trench, but also the insulating filling portion 107 within the second trench n2. Thus, at the location of the second trench n2, high reverse bias voltages can still be borne by both the first insulating layer 102 and the insulating filling portion 107. Even if the first insulating layer 102 formed within the second trench n2 has defects or poor deposition, the presence of the insulating filling portion 107 can compensate for these defects and deficiencies, thereby increasing the first insulating layer 102 within the second trench n2's ability to withstand high reverse bias voltages and preventing breakdown of the first insulating layer 102 within the second trench n2, thereby further improving the reliability of the light-emitting device.

[0071] In addition to providing an insulating filling portion 107 in the first groove, when an insulating filling portion 107 is also provided on the peripheral structure m1: the second electrode layer 101 includes a connecting electrode m2 provided in the area where the peripheral structure m1 is located, and the light-emitting device also includes a control circuit m3, and the control circuit m3 is electrically connected to the connecting electrode m2, an insulating filling portion 107 can also be provided between the first insulating layer 102 provided on the peripheral structure m1 and the connecting electrode m2. In this way, the second electrode layer 101 can also cover the insulating filling portion 107, and the distance between the connecting electrode m2 and the first insulating layer 102 can also be increased. The insulating filling portion 107 can compensate for the defects and deficiencies in the first insulating layer 102 on the peripheral structure m1, so that the voltage can be borne by the first insulating layer 102 and the insulating filling portion 107 together, thereby increasing the voltage-bearing capacity of the first insulating layer 102 on the peripheral structure m1 and avoiding the first insulating layer 102 on the peripheral structure m1 from being broken down, thereby further improving the reliability of the light-emitting device.

[0072] If the control circuit m3 is located in the area where the peripheral structure m1 is located, it means that the control circuit m3 and the light-emitting unit m0 are located on the same substrate, which can achieve an integrated design of the light-emitting device. Since the peripheral structure m1 is not used for light emission, arranging the control circuit m3 in the area where the peripheral structure m1 is located can avoid occupying the area where the light-emitting unit m0 is located, thereby avoiding affecting the light-emitting effect of the light-emitting device. In addition, the control circuit m3 can be located on the side of the connecting electrode m2 facing away from the peripheral structure m1, and a third insulating layer 105 is provided between the control circuit m3 and the connecting electrode m2. The control circuit m3 and the connecting electrode m2 are electrically connected via a through hole in the third insulating layer 105, thereby achieving electrical connection between the control circuit m3 and the connecting electrode m2.

[0073] Alternatively, as shown in FIG11 , the control circuit m3 and the light-emitting unit m0 can also be arranged on different substrates. In other words, the light-emitting device can include a first subsection f1 and a second subsection f2. The peripheral structure m1, the light-emitting unit m0, the first insulating layer (not shown in FIG11 ), the insulating filling portion (not shown in FIG11 ), the first electrode layer (not shown in FIG11 ), the second electrode layer (not shown in FIG11 ) and the first semiconductor layer (not shown in FIG11 ) can all be arranged in the first subsection f1 , while the control circuit m3 is arranged in the second subsection f2 . This can avoid the control circuit m3 occupying the area of ​​the first subsection f1 , so that the first subsection f1 can reserve more space for the light-emitting unit m0 , thereby improving the resolution of the light-emitting device. In this case, the first subsection f1 and the second subsection f2 can be connected by a flip chip film m5 or other structure to achieve a binding connection between the control circuit m3 and the connecting electrode m2 . Furthermore, the connecting electrode m2 can be a pad, and the structural form of the pad can be designed according to actual needs and is not limited here.

[0074] When the insulating filling portion 107 is provided in the first trench, in the second trench n2, and on the peripheral structure m1, the reliability of the light-emitting device is tested. The test results are shown in Table 1 below. The probability of breakdown of the light-emitting device under high reverse bias voltage can be reduced to 0, thereby effectively solving the breakdown problem under high reverse bias voltage.

[0075] Table 1

[0076] Furthermore, by testing the reverse bias leakage current of the light-emitting device, the test results shown in FIG12 were obtained, wherein the dotted line indicated by arrow 1 represents the leakage current corresponding to a reverse bias voltage of -60V, the dotted line indicated by arrow 2 represents the leakage current corresponding to a reverse bias voltage of -50V, and the dotted line indicated by arrow 3 represents the leakage current corresponding to a reverse bias voltage of -40V. "time" represents time, "hours" represents the time unit in hours, and "leakage current" represents the leakage current. From the results shown in FIG12 , it can be seen that when the insulating filling portion 107 is provided, the leakage current of the light-emitting device remains small even in the reverse bias state, and the leakage current does not increase with time. That is, the leakage current remains constant with time, indicating that the light-emitting device has not experienced breakdown, has good stability, and is highly reliable.

[0077] It should be understood that the similarities between the light emitting device in this embodiment and the light emitting device in the first embodiment mentioned above can be found in the light emitting device introduced in the first embodiment mentioned above, and the repeated parts will not be repeated.

[0078] FIG13 exemplarily shows a flowchart of manufacturing a light-emitting device provided in an embodiment of the present application. As shown in FIG13 , the manufacturing method of the light-emitting device may include the following steps:

[0079] Step S1: As shown in FIG13( a ), a first electrode layer 106 is formed on the entire surface of the substrate by using a vapor deposition method;

[0080] Step S2: As shown in FIG13( a ), epitaxial growth technology is used to sequentially grow a first semiconductor layer 103 , a light-emitting layer m01 , and a second semiconductor layer m02 on the first electrode layer 106 , and the first semiconductor layer 103 , the light-emitting layer m01 , and the second semiconductor layer m02 may cover the entire first electrode layer 106 ;

[0081] Step S3: As shown in (b) of FIG13 , dry etching or wet etching is used to etch the second semiconductor layer m02, the light-emitting layer m01, and the first semiconductor layer 103 to etch out a plurality of stacked columns and a peripheral structure m1. Each stacked column and the peripheral structure m1 includes: the first semiconductor layer 103, the light-emitting layer m01, and the second semiconductor layer m02 stacked in sequence along a direction from the first electrode layer 106 to the first semiconductor layer 103. When etching the first semiconductor layer 103, a portion of the first semiconductor layer 103 is retained to avoid exposing the first electrode layer 106.

[0082] Step S4: As shown in FIG13( b ), an auxiliary electrode m03 is formed on the stacked column by vapor deposition to form a light-emitting unit m0, so that a first groove is formed in the region between the two light-emitting units m0, and a second groove is formed in the region between the peripheral structure m1 and the light-emitting unit m0;

[0083] Among them, the cross-sectional shape of the light-emitting unit m0 parallel to the surface of the first electrode layer 106 can be square as shown in Figure 5, or circular as shown in Figure 11. Of course, it can also be other shapes, such as elliptical, polygonal or irregular shapes, etc., which can be set according to actual needs and are not limited here.

[0084] It should be understood that due to the viewing angle, only one light-emitting unit m0 is shown in FIG13(b), but this does not mean that the light-emitting device only includes this one light-emitting unit m0. In addition, to avoid overly complex drawings, the first groove and the second groove are not shown in FIG13(b).

[0085] Step S5: As shown in (c) of FIG13 , a first insulating layer 102 is formed on the first trench, the second trench, the light-emitting unit m0 and the peripheral structure m1 by a vapor deposition method, and the first insulating layer 102 exposes the auxiliary electrode m03 to facilitate electrical connection between the auxiliary electrode m03 and the second electrode layer;

[0086] Step S6: As shown in (d) of FIG13 , a liquid polymer material is spin-coated to form an initial film in the first trench, in the second trench, and on the first insulating layer 102 of the peripheral structure m1, and then the initial film is cured to convert the initial film into a solid insulating filling portion 107;

[0087] Step S7: As shown in (e) in Figure 13, if the structure after executing step S6 is called a semi-finished product, an electroplating method or a vapor deposition method is used to deposit a conductive layer on the entire surface of the semi-finished product, and the conductive layer is patterned to obtain a second electrode layer 101 having an opening m4. The opening m4 is arranged corresponding to the light-emitting unit m0, and the second electrode layer 101 is electrically connected to the auxiliary electrode m03, and the second electrode layer 101 covers the insulating filling portion 107.

[0088] In this way, a light-emitting device can be manufactured through the above steps, and the manufactured light-emitting device has high reliability.

[0089] A method for fabricating a light-emitting device according to an embodiment of the present application is illustrated. The method is substantially similar to that described above, except that step S6 in the above embodiment is modified to include forming an insulating filler portion using a vapor deposition method and an insulating material within the first trench, the second trench, and the first insulating layer of the peripheral structure. This method also allows for the formation of an insulating filler portion using vapor deposition, and the insulating filler portion can effectively fill defects and deficiencies in the first insulating layer, thereby improving the withstand voltage capability of the first insulating layer and thereby enhancing the reliability of the light-emitting device.

[0090] It should be understood that the similarities between the manufacturing method in this embodiment and the manufacturing method in the aforementioned embodiment can be found in the description of the manufacturing method in the aforementioned embodiment, and the repeated parts will not be repeated.

[0091] FIG14 exemplarily illustrates a manufacturing process flow diagram of a light-emitting device provided in an embodiment of the present application. As shown in FIG14 , the manufacturing method in this embodiment is substantially similar to the manufacturing method in the above-mentioned embodiment, except that step S8 is added after step S6 and before step S7. For example, step S8 includes: as shown in FIG14( e), forming a second insulating layer 104 on the insulating filling portion 107 by vapor deposition, such that the insulating filling portion 107 is disposed between the first insulating layer 102 and the second insulating layer 104. Furthermore, as shown in FIG14( f), the insulating filling portion 107 contacts the second electrode layer 101 through the second insulating layer 104, thereby improving the bonding strength between the insulating filling portion 107 and the second electrode layer 101, thereby improving the reliability of the light-emitting device. It should be understood that the similarities between the manufacturing method in this embodiment and the manufacturing method in the above-mentioned embodiment can be found in the description of the manufacturing method in the above-mentioned embodiment, and the repeated parts will not be repeated.

[0092] Obviously, those skilled in the art may make various changes and modifications to the embodiments of the present application without departing from the spirit and scope of the embodiments of the present application. Thus, if these modifications and variations of the embodiments of the present application fall within the scope of the claims of the present application and their equivalents, the present application also intends to include such modifications and variations.

Claims

1. A light emitting device, characterized in that: include: A first electrode layer, a first semiconductor layer disposed on the first electrode layer, and a light emitting unit, a first insulating layer, an insulating filling portion, and a second electrode layer disposed on the first semiconductor layer; The light-emitting units are provided in plurality and arranged at intervals, the light-emitting units are electrically connected to the second electrode layer, a first groove is formed in the region between two of the light-emitting units, and the first insulating layer is provided on the bottom and the wall of the first groove, and on the side of the light-emitting unit away from the first semiconductor layer; The insulating filling portion is provided on a surface of the first insulating layer in the first trench facing away from the first semiconductor layer, and the second electrode layer covers the insulating filling portion.

2. The light emitting device according to claim 1, characterized in that: It also includes a peripheral structure disposed on the first semiconductor layer, wherein the peripheral structure surrounds all of the light-emitting units; A second groove is formed in the area between the peripheral structure and the light-emitting unit, the first insulating layer is provided on the side of the peripheral structure facing away from the first semiconductor layer, and on the bottom and wall of the second groove, and the insulating filling portion is provided on the surface of the side of the first insulating layer in the second groove facing away from the first semiconductor layer.

3. The light emitting device according to claim 2, characterized in that: The second electrode layer includes a connecting electrode disposed in the area where the peripheral structure is located; The light emitting device further comprises a control circuit, wherein the control circuit is electrically connected to the connection electrode; The insulating filling portion is provided between the first insulating layer and the connecting electrode.

4. The light emitting device according to claim 3, characterized in that: The control circuit is arranged in the area where the peripheral structure is located, and the control circuit is arranged on a side of the connecting electrode away from the peripheral structure.

5. The light emitting device according to claim 3, characterized in that: The connecting electrode is bound and connected to the control circuit.

6. The light emitting device according to claim 5, characterized in that: The connecting electrode is a pad.

7. The light emitting device according to any one of claims 2 to 6, characterized in that: The light emitting unit and the peripheral structure both include: the first semiconductor layer, the light emitting layer, and the second semiconductor layer stacked in a direction from the first electrode layer to the second electrode layer; The light-emitting unit further comprises: an auxiliary electrode disposed on a surface of the second semiconductor layer facing away from the light-emitting layer; The second electrode layer is disposed on the entire surface, and the second electrode layer has a plurality of openings, the openings are disposed corresponding to the light-emitting units, and each of the light-emitting units emits light outward through the corresponding opening; The auxiliary electrode in each of the light-emitting units is connected to the second electrode layer; The first semiconductor layer and the second semiconductor layer transport charges of different polarities.

8. The light emitting device according to any one of claims 1 to 7, characterized in that: A second insulating layer is further disposed between the second electrode layer and the insulating filling portion.

9. The light emitting device according to claim 8, characterized in that: The first insulating layer and the second insulating layer are made of the same material.

10. The light emitting device according to any one of claims 1 to 9, characterized in that: The insulating filling portion is made of a material comprising: an insulating material containing at least one of C, O and Si.

11. A method for manufacturing a light emitting device according to any one of claims 1 to 10, characterized in that: include: forming a first electrode layer; forming a first semiconductor layer on the first electrode layer; Forming a plurality of light emitting units spaced apart from each other on the first semiconductor layer, wherein a first groove is formed in an area between two of the light emitting units; forming a first insulating layer at least on a bottom and a wall of the first trench and on the light emitting unit; forming an insulating filling portion at least on the first insulating layer in the first trench; A second electrode layer is formed so that the second electrode layer covers the insulating filling portion and the second electrode layer is electrically connected to the light emitting unit.

12. The method according to claim 11, characterized in that An insulating filling portion is formed, comprising: Using a liquid insulating material, depositing it at least on the first insulating layer in the first trench to form an initial film; The initial film is cured to form the solid insulating filling part.

13. The method according to claim 11, characterized in that An insulating filling portion is formed, comprising: The insulating material is deposited at least on the first insulating layer in the first trench by using a vapor deposition method to form the solid insulating filling portion.

14. The method according to any one of claims 11 to 13, characterized in that: Also includes: When forming the light-emitting unit, forming a peripheral structure surrounding all the light-emitting units; Forming an insulating filling portion includes: forming a second groove in the area between the peripheral structure and the light-emitting unit, and when the first insulating layer is also provided on the peripheral structure and on the bottom and wall of the second groove, the insulating filling portion is formed on the first groove and the first insulating layer in the second groove, and on at least a portion of the first insulating layer located in the area where the peripheral structure is located.

15. The method according to any one of claims 11 to 14, characterized in that: Also includes: Before forming the second electrode layer, a second insulating layer is formed on the insulating filling part.

16. A radar, characterized in that: include: A detector, a controller, and a light emitting device as described in any one of claims 1 to 10; The light emitting device is used to: emit electromagnetic waves to a target under the control of the controller; The detector is used to: receive the echo reflected from the target and transmit it to the controller; The controller is used to determine the information of the target according to the electromagnetic waves emitted by the light emitting device and the echo detected by the detector.

17. An electronic device, characterized in that: It comprises: a control device, and the radar as claimed in claim 16, wherein the radar is arranged on the control device.

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