Film forming apparatus and film forming method

Abstract

This film forming apparatus includes: an alignment means for adjusting the relative position between a substrate and a mask on the basis of measurement results of alignment marks that are respectively formed on the substrate and the mask; and an adjustment means for adjusting the relative position between the substrate and the mask on the basis of the measurement results. This film forming apparatus forms, through the mask, a film of a vapor deposition substance on a film formation surface of the substrate that is attracted by an electrostatic chuck. This film forming apparatus is provided with a static electricity elimination device for eliminating static electricity on the film formation surface of the substrate before the substrate and the mask come close to each other by the position adjustment by the adjustment means.

Description

Film forming apparatus and film forming method

[0001] The present invention relates to a film formation apparatus and a film formation method for forming a film on a substrate.

[0002] Patent Document 1 discloses a film forming apparatus that includes an electrostatic chuck that attracts a substrate, a mechanism that aligns the substrate attracted to the electrostatic chuck with a mask placed on a mask table, and an adjustment mechanism that adjusts the relative inclination between the electrostatic chuck and the mask table.

[0003] JP 2022-57673 A

[0004] When the film-forming surface of the substrate is charged, if a mask is brought close to the substrate for alignment, the mask may be pulled up due to the charge on the film-forming surface, causing it to come into contact with the film-forming surface of the substrate. Since accurate alignment cannot be performed when the film-forming surface is charged, the number of alignment operations increases, the mask does not converge to the desired alignment position, or other problems occur during alignment.

[0005] To enable a smooth alignment operation, it is preferable to neutralize the film-forming surface of the substrate before the mask and the substrate are brought closer together by adjusting the relative positions of the mask and the substrate.

[0006] In view of the above problems, the present invention provides a technology that can neutralize the film formation surface of a substrate by adjusting the relative positions of the mask and the substrate before the mask and the substrate approach each other.

[0007] A film formation apparatus according to one aspect of the present invention has an adjustment means for adjusting the relative positions of the substrate and the mask based on measurement results of alignment marks formed on the substrate and the mask, respectively, and forms a film of a vapor deposition material through the mask on the film formation surface of the substrate attracted to an electrostatic chuck, and is equipped with a discharge means for discharging electricity from the film formation surface of the substrate before the substrate and the mask approach each other by adjusting the position of the adjustment means.

[0008] According to the present invention, the relative positions of the mask and the substrate can be adjusted to remove static electricity from the film-forming surface of the substrate before the mask and the substrate approach each other.

[0009] FIG. 1 is a schematic diagram of a part of a manufacturing line for electronic devices. FIG. 1 is a schematic diagram of a film forming apparatus according to an embodiment. FIG. 2 is a diagram showing a first configuration example of a static eliminator in a film forming apparatus according to an embodiment. FIG. 3 is a diagram showing a second configuration example of a static eliminator in a film forming apparatus according to an embodiment. FIG. 4 is a diagram showing a fourth configuration example of a static eliminator in a film forming apparatus according to an embodiment. FIG. 5 is a diagram showing a sixth configuration example of a static eliminator in a film forming apparatus according to an embodiment. FIG. 6 is a diagram showing a seventh configuration example of a static eliminator in a film forming apparatus according to an embodiment. FIG. 8 is a diagram showing a eighth configuration example of a static eliminator in a film forming apparatus according to an embodiment. FIG. 1 is a diagram showing an overall processing flow by a film forming apparatus according to an embodiment.

[0010] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0011] <Electronic Device Manufacturing Line> Figure 1 is a schematic diagram showing a portion of the configuration of an electronic device manufacturing line to which the film formation apparatus of the present invention can be applied. The manufacturing line in Figure 1 is used, for example, to manufacture display panels for organic EL display devices, in which substrates 100 are sequentially transported to a film formation block 301, and organic EL elements are formed on the substrates 100. In Figure 1, arrow Z indicates the vertical direction (the direction of gravity), and arrows X and Y indicate horizontal directions that are orthogonal to each other. Also, in each figure, G indicates ground.

[0012] In the film formation block 301, a plurality of film formation chambers 303a to 303d in which film formation processing is performed on the substrate 100 and a mask storage chamber 305 in which masks are stored before and after use are arranged around a transfer chamber 302 that has an octagonal shape in a plan view. A transfer robot 302a that transfers the substrate 100 is arranged in the transfer chamber 302. The transfer robot 302a includes a hand that holds the substrate 100 and an articulated arm that can move the hand horizontally and vertically. In other words, the film formation block 301 is a cluster-type film formation unit in which a plurality of film formation chambers 303a to 303d are arranged around the transfer robot 302a. When the film formation chambers 303a to 303d are referred to collectively or when no distinction is made between them, they will be referred to as film formation chambers 303.

[0013] A buffer chamber 306, a swirl chamber 307, and a delivery chamber 308 are disposed upstream and downstream of the deposition block 301 in the transport direction (arrow direction) of the substrate 100, respectively. Each chamber is maintained in a vacuum state during the manufacturing process. Although only one deposition block 301 is shown in FIG. 1 , the manufacturing line according to this embodiment has multiple deposition blocks 301, and the multiple deposition blocks 301 are connected by a connecting device composed of the buffer chamber 306, the swirl chamber 307, and the delivery chamber 308. The configuration of the connecting device is not limited to this, and may be composed of only the buffer chamber 306 or the delivery chamber 308, for example.

[0014] The transport robot 302a transports the substrate 100 from the upstream delivery chamber 308 to the transport chamber 302, transports the substrate 100 between the film formation chambers 303, transports the mask between the mask storage chamber 305 and the film formation chamber 303, and transports the substrate 100 from the transport chamber 302 to the downstream buffer chamber 306.

[0015] The buffer chamber 306 is a chamber for temporarily storing substrates 100 depending on the operating status of the production line. The buffer chamber 306 is provided with a substrate storage shelf, also called a cassette, and an elevator mechanism. The substrate storage shelf has a multi-tier structure that can store multiple substrates 100 while maintaining the processing surface (film formation surface) of the substrate 100 in a horizontal position facing downward in the direction of gravity. The elevator mechanism raises and lowers the substrate storage shelf to align the tier where the substrate 100 is loaded or unloaded with the transport position. This allows multiple substrates 100 to be temporarily stored and retained in the buffer chamber 306.

[0016] The swirl chamber 307 is equipped with a device for changing the orientation of the substrate 100. In this embodiment, the swirl chamber 307 rotates the orientation of the substrate 100 by 180 degrees using a transfer robot 307a provided in the swirl chamber 307. The transfer robot 307a includes a hand that holds the substrate 100 and an articulated arm that can move the hand horizontally and vertically. The transfer robot 307a provided in the swirl chamber 307 rotates 180 degrees while supporting the substrate 100 received in the buffer chamber 306 and delivers it to the delivery chamber 308, thereby swapping the front and rear ends of the substrate between the buffer chamber 306 and the delivery chamber 308. This ensures that the orientation of the substrate 100 when carried into the film formation chamber 303 is the same in each film formation block 301, and therefore the scanning direction of the evaporation source and the orientation of the mask relative to the substrate 100 can be aligned in each film formation block 301. With this configuration, the orientation of the masks placed in the mask storage chambers 305 in each film formation block 301 can be aligned, simplifying mask management and improving usability.

[0017] The control system of the production line includes a host computer 300 that controls the entire line, and control devices 14a-14d, 309, and 310 that control each component, and these devices can communicate with each other via a wired or wireless communication line 300a. The control devices 14a-14d are provided corresponding to the film formation chambers 303a-303d, and control the film formation apparatus 1 described below. When the control devices 14a-14d are referred to collectively or when they are not to be distinguished, they will be referred to as the control device 14.

[0018] The control device 14 controls the entire film forming apparatus 1. The control device 14 includes a processing unit 1, a storage unit, an input / output interface (I / O), and a communication unit. The processing unit is a processor, such as a CPU, that executes a program stored in the storage unit to control the film forming apparatus 1. The storage unit is a storage device, such as a ROM, RAM, or HDD, and stores various control information in addition to the program executed by the processing unit. The I / O is an interface that transmits and receives signals between the processing unit and each component of the film forming apparatus 1. The communication unit is a communication device that communicates with the host device 300 or other control devices 14, 309, 310, etc. via a communication line. The processing unit receives information from the host device 300 or transmits information to the host device 300 via the communication unit. Note that all or part of the control device 14 or the host device 300 may be configured using a PLC, ASIC, or FPGA.

[0019] The control device 309 controls the transport robot 302a. The control device 310 controls the device in the swirl chamber 307 and the transport robot 307a. The host device 300 transmits information about the substrate 100 and instructions such as transport timing to the respective control devices 14, 309, and 310, and the respective control devices 14, 309, and 310 control their respective components based on the received instructions.

[0020] <Overview of Film Forming Apparatus> FIG. 2 is a schematic diagram of a film forming apparatus 1 according to one embodiment. The film forming apparatus 1, installed in the film forming chamber 303, forms a film of a vapor deposition material on a substrate 100, forming a thin film of the vapor deposition material in a predetermined pattern through a mask 101. The material of the substrate 100 on which a film is formed in the film forming apparatus 1 can be selected from glass, resin, metal, and other materials, and a glass substrate with a resin layer such as polyimide formed thereon is preferably used. The vapor deposition material may be an organic material or an inorganic material (metal, metal oxide, etc.). The film forming apparatus 1 can be used in manufacturing electronic devices such as display devices (e.g., flat panel displays), thin-film solar cells, and organic photoelectric conversion elements (organic thin-film imaging elements), as well as optical components, and is particularly applicable to manufacturing apparatuses for manufacturing organic EL panels. The following description will discuss an example in which the film forming apparatus 1 forms a film on the substrate 100 by vacuum deposition. However, this embodiment is not limited to this and can also be applied to various film forming methods such as sputtering and CVD.

[0021] The film forming apparatus 1 has a box-shaped vacuum chamber 3 (also simply referred to as a chamber) capable of maintaining a vacuum inside. The internal space 3a of the vacuum chamber 3 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In this embodiment, the vacuum chamber 3 is connected to a vacuum pump (not shown). In this specification, "vacuum" refers to a state filled with a gas at a pressure lower than atmospheric pressure, in other words, a reduced pressure state. The internal space 3a of the vacuum chamber 3 is equipped with a substrate support unit 6 that supports the substrate 100 in a horizontal position, a mask table 5 that supports a mask 101, a film forming unit 4, a plate unit 9, and an electrostatic chuck 15. The mask 101 is a metal mask having an opening pattern corresponding to the thin film pattern to be formed on the substrate 100 and is placed on the mask table 5. The mask table 5 can be replaced with other means for fixing the mask 101 in a predetermined position. The mask 101 can be, for example, a mask having a mask foil with a thickness of 10 μm to 100 μm and attached to a frame-shaped mask frame. The material of the mask 101 is not particularly limited, but may be a metal with a small thermal expansion coefficient, such as Invar. The film formation process is performed in a state where the substrate 100 is placed on the mask 101 and the substrate 100 and the mask 101 are superimposed on each other.

[0022] The plate unit 9 includes a cooling plate 10 and a magnet plate 11. The cooling plate 10 is suspended below the magnet plate 11 so as to be displaceable in the Z direction relative to the magnet plate 11. The cooling plate 10 functions to cool the substrate 100 attracted to the electrostatic chuck 15 during film formation by contacting the electrostatic chuck 15 (described later). The cooling plate 10 is not limited to a cooling plate equipped with a water cooling mechanism or the like to actively cool the substrate 100. It may also be a plate-like member that does not have a water cooling mechanism or the like but removes heat from the substrate 100 by contacting the electrostatic chuck 15. The magnet plate 11 is a plate that attracts the mask 101 by magnetic force and is placed on the upper surface of the substrate 100 to improve adhesion between the substrate 100 and the mask 101 during film formation.

[0023] The cooling plate 10 and the magnetic plate 11 may be omitted as appropriate. For example, if the electrostatic chuck 15 is provided with a cooling mechanism, the cooling plate 10 may be omitted. Furthermore, if the electrostatic chuck 15 attracts the mask 101, the magnetic plate 11 may be omitted.

[0024] The film forming unit 4 is an evaporation source that is composed of a heater, a shutter, an evaporation source drive mechanism, an evaporation rate monitor, etc., and that deposits an evaporation material onto the substrate 100. More specifically, in this embodiment, the film forming unit 4 is a linear evaporation source in which a plurality of nozzles (not shown) are arranged in the X direction, and evaporation material is emitted from each nozzle. For example, the linear evaporation source is moved back and forth in the Y direction (depth direction of the apparatus) by an evaporation source moving mechanism (not shown). In this embodiment, the film forming unit 4 is provided in the vacuum chamber 3 in which the alignment process described below is performed. However, in an embodiment in which the film forming process is performed in a chamber other than the vacuum chamber 3 in which alignment is performed, the film forming unit 4 is not provided in the vacuum chamber 3.

[0025] The substrate supporting unit 6 supports the peripheral edge of the substrate 100. The substrate supporting unit 6 includes a plurality of base portions 61 and a plurality of substrate supporting portions 62 that protrude inward from the plurality of base portions 61. The substrate supporting portions 62 are sometimes also called "receiving claws" or "substrate supporting claws." The base portions 61 are each supported by a support shaft R3. The substrate 100 that has been carried into the film forming apparatus 1 by the transfer robot 302a is supported by the plurality of substrate supporting portions 62.

[0026] In this embodiment, the multiple substrate support portions 62 are composed of leaf springs, and when the substrate 100 supported by the multiple substrate support portions 62 is attracted to the electrostatic chuck 15, the elastic force of the leaf springs can press the periphery of the substrate 100 against the electrostatic chuck 15.

[0027] The electrostatic chuck 15 attracts the substrate 100. In this embodiment, the electrostatic chuck 15 is provided between the substrate support unit 6 and the plate unit 9, and is supported by one or more support shafts R1. In one embodiment, the support shaft R1 is a cylindrical shaft.

[0028] The electrostatic chuck 15 has a structure in which, for example, an electric circuit such as a metal electrode is embedded inside a ceramic matrix (also called a base). The surface of the electrostatic chuck 15 may be made of polyimide (resin) or may be anodized. In this embodiment, the electrostatic chuck 15 has multiple electrode portions. The electrode portions include an electrode to which a positive (+) voltage is applied and an electrode to which a negative (-) voltage is applied. When a voltage is applied to each electrode, a polarization charge is induced in the substrate 100 through the ceramic matrix, and the electrostatic attraction (electrostatic force) between the substrate 100 and the electrostatic chuck 15 attracts and fixes the film formation surface 100a of the substrate 100 to the attracting surface 150 of the electrostatic chuck 15.

[0029] In addition, multiple openings are formed in the electrostatic chuck 15, and the measurement units (first measurement unit 7 and second measurement unit 8) described later capture images of the alignment marks described later through the multiple openings to obtain information regarding the relative positional relationship between the substrate 100 and the mask 101.

[0030] The position adjustment unit 20 adjusts the relative position of the substrate 100, the peripheral edge of which is supported by the substrate support unit 6, or the substrate 100 attracted by the electrostatic chuck 15, with respect to the mask 101. The position adjustment unit 20 adjusts the relative position of the substrate 100 with respect to the mask 101 by displacing the substrate support unit 6 or the electrostatic chuck 15 on the X-Y plane. In other words, the position adjustment unit 20 can also be said to be a unit that adjusts the horizontal positional relationship between the mask 101 and the substrate 100. For example, the position adjustment unit 20 can displace the substrate support unit 6 in the X and Y directions and rotate it around an axis in the Z direction. In this embodiment, the position of the mask 101 is fixed and the substrate 100 is displaced to adjust their relative positions. However, the adjustment may be performed by displacing the mask 101, or both the substrate 100 and the mask 101 may be displaced. For example, the position adjustment unit 20 may displace the substrate support unit 6 using a well-known configuration, such as a motor as a drive source and a ball screw mechanism that converts the motor's driving force into linear motion.

[0031] The distance adjustment unit 22 adjusts the distance between the electrostatic chuck 15 and the substrate support unit 6 and the mask table 5 by raising and lowering them, thereby moving the substrate 100 and the mask 101 closer to or farther apart in the thickness direction (Z direction) of the substrate 100. In this embodiment, the distance adjustment unit 22 includes a first lift plate 220 that supports the electrostatic chuck 15 via multiple support shafts R1 and supports the substrate support unit 6 via multiple support shafts R3. The distance adjustment unit 22 raises and lowers the first lift plate 220 to raise and lower the electrostatic chuck 15 and the substrate support unit 6. In other words, the distance adjustment unit 22 brings the substrate 100 and the mask 101 closer to each other in the overlapping direction and moves them apart in the opposite direction. Note that the "distance" adjusted by the distance adjustment unit 22 is the so-called vertical distance (or perpendicular distance), and the distance adjustment unit can also be said to be a unit that adjusts the vertical positions of the mask 101 and the substrate 100. For example, the position adjustment unit 20 may displace the first lift plate 220 using a well-known configuration, such as a motor serving as a drive source and a ball screw mechanism that converts the drive force of the motor into linear motion. The distance adjustment unit 22 also includes an actuator 65 that moves the substrate support unit 6 relative to the first lift plate 220, thereby changing the relative position of the substrate support unit 6 with respect to the electrostatic chuck 15. The measurement units (first measurement unit 7 and second measurement unit 8), the position adjustment unit 20, and the distance adjustment unit 22 function as adjustment mechanisms (7, 8, 20, 22) and adjust the relative positions of the substrate 100 and the mask 101 based on measurement results of alignment marks formed on the substrate 100 and the mask 101, respectively.

[0032] In this embodiment, the distance adjustment unit 22 fixes the position of the mask table 5 and moves the substrate support unit 6 and the electrostatic chuck 15 to adjust the distance therebetween in the Z direction, but this is not limited to this. The positions of the substrate support unit 6 or the electrostatic chuck 15 may be fixed and the mask table 5 may be moved to perform adjustment, or the substrate support unit 6, the electrostatic chuck 15, and the mask table 5 may each be moved to adjust the distance therebetween.

[0033] The plate unit lifting unit 13 lifts and lowers the second lift plate 12, which is located outside the vacuum chamber 3, thereby lifting and lowering the plate unit 9, which is connected to the second lift plate 12 and located inside the vacuum chamber 3. The plate unit 9 is connected to the second lift plate 12 via one or more support shafts R2. In this embodiment, the plate unit 9 is supported by two support shafts R2. The support shafts R2 extend upward from the magnet plate 11 and are connected to the second lift plate 12 by passing through openings in the upper wall portion 30, the openings in the fixed plate 20a and the movable plate 20b, and the opening in the first lift plate 220. For example, the position adjustment unit 20 may displace the second lift plate 12 using a well-known configuration, such as a motor serving as a drive source and a ball screw mechanism that converts the driving force of the motor into linear motion.

[0034] The openings in the upper wall 30 of the vacuum chamber 3, through which the support shafts R1 to R3 pass, are large enough to allow the support shafts R1 to R3 to be displaced in the X and Y directions. To maintain the airtightness of the vacuum chamber 3, bellows or the like are provided in the openings in the upper wall 30 through which the support shafts R1 to R3 pass.

[0035] The measurement units (first measurement unit 7 and second measurement unit 8) measure the positional misalignment between the substrate 100, whose peripheral edge is supported by the substrate support unit 6, and the mask 101. In this embodiment, the first measurement unit 7 and the second measurement unit 8 are both imaging devices (cameras) that capture images. The first measurement unit 7 and the second measurement unit 8 are disposed above the upper wall 30, and can capture images of the inside of the vacuum chamber 3 through a window (not shown) formed in the upper wall 30.

[0036] In this embodiment, alignment marks used for alignment are formed on the substrate 100 and the mask 101. More specifically, the substrate 100 and the mask 101 are each provided with rough alignment marks for roughly adjusting their positions and fine alignment marks for more highly accurate position adjustment.

[0037] The first measurement unit 7 is a low-magnification CCD camera (rough camera) that has a relatively wide field of view but low resolution, and measures the rough positional deviation between the substrate 100 and the mask 101. For example, two first measurement units 7 are provided so as to capture images, via the openings 152, of rough alignment marks provided near the centers of the short sides of the substrate 100 and the mask 101, respectively.

[0038] The second measurement unit 8 is a high-magnification CCD camera (fine camera) that has a relatively narrow field of view but high resolution (for example, on the order of several μm), and measures with high precision the misalignment between the substrate 100 and the mask 101. For example, four second measurement units 8 are provided so as to capture images of fine alignment marks provided at the four corners of the substrate 100 and the mask 101 through the openings 152.

[0039] In this embodiment, a rough position adjustment between the substrate 100 and the mask 101 is performed based on the measurement results of the first measurement unit 7, and then a precise position adjustment between the substrate 100 and the mask 101 is performed based on the measurement results of the second measurement unit 8.

[0040] The film formation apparatus 1 of this embodiment has a deposition-up type configuration (a configuration in which, during film formation, the film formation surface of the substrate 100 faces vertically downward, and the film formation surface 100a of the substrate 100 faces vertically upward). In the deposition-up type film formation apparatus 1, the back surface (the surface facing vertically upward) of the film formation surface 100a of the substrate 100 is the attraction surface that is attracted to the electrostatic chuck 15, in other words, the contact surface where the electrostatic chuck 15 and the substrate 100 come into contact. In the film formation apparatus 1, the vertically upper surface of the substrate 100 is the film formation surface 100a, and the vertically lower surface of the substrate 100 is the film formation surface. The film formation apparatus 1 forms a thin film of a vapor deposition material having a predetermined pattern on the film formation surface of the substrate via a mask 101.

[0041] The adjustment mechanism (7, 8, 20, 22) of the film forming apparatus 1 adjusts the relative positions of the substrate 100 and the mask 101 based on the measurement results of the alignment marks formed on the substrate 100 and the mask 101, respectively, and the film forming apparatus 1 forms a film of evaporation material via the mask 101 on the film forming surface 100a of the substrate 100 adsorbed to the electrostatic chuck 15.

[0042] The static eliminator of the film forming apparatus 1 of this embodiment adjusts the position of the adjustment mechanism (7, 8, 20, 22) to eliminate static electricity from the film forming surface 100a of the substrate 100 before the substrate 100 and the mask 101 approach each other.

[0043] As a state before the substrate 100 and the mask 101 approach each other, the static eliminator of the film formation apparatus 1 eliminates static electricity from the film formation surface 100a of the substrate 100 before the substrate 100 is attracted to the electrostatic chuck 15. Alternatively, as a state before the substrate 100 and the mask 101 approach each other, the static eliminator of the film formation apparatus 1 eliminates static electricity from the film formation surface 100a of the substrate 100 after the substrate 100 is attracted to the electrostatic chuck 15.

[0044] In this embodiment, the path of the substrate 100 before it comes into contact with the electrostatic chuck 15 is referred to as the substrate transport path before film formation (hereinafter, also simply referred to as the transport path). For example, the path of the substrate 100 before it is attracted to the electrostatic chuck 15 of the film formation apparatus 1 in the film formation chamber 303 where the first film formation process is performed is the substrate transport path before film formation, and static elimination at a position on the substrate transport path is static elimination before the substrate 100 and the mask 101 come close to each other.

[0045] 1 , for example, a path from a substrate storage shelf provided in the buffer chamber 306 to a point before the substrate 100 is attracted to the electrostatic chuck 15 of the film formation apparatus 1 in the film formation chamber 303 is a substrate transport path before film formation, and static elimination at a position on the substrate transport path is performed before the substrate 100 and the mask 101 approach each other. The substrate transport path before film formation may be any path up to a point before the substrate 100 is attracted to the electrostatic chuck 15, and is not limited to the configuration shown in the example of FIG. 1 , and the path may start from a stocker that stores the substrate 100 further upstream than the buffer chamber 306. In this embodiment, the device configuration on the substrate transport path before film formation and each film formation block 301 including the film formation apparatus 1 may be collectively referred to as a film formation system or a film formation apparatus.

[0046] <Configuration Example 1 of the Static Eliminator: Example of Providing a Static Eliminator in the Transfer Chamber 302> FIG. 3 is a diagram showing Configuration Example 1 of the static eliminator in the film forming apparatus 1 according to the embodiment. As Configuration Example 1 of the static eliminator, a configuration using a static eliminator (ionizer) 350 that can be used in a vacuum environment will be described. FIG. 3 shows an example of providing the static eliminator (ionizer) 350 in the transfer chamber 302 as an example of a substrate transfer path before film formation (a state before the substrate 100 and the mask 101 approach each other). Specifically, the example shows the static eliminator (ionizer) 350 being provided in a position before (near) a gate valve 361 between the film forming chamber 303 and the transfer chamber 302. The static elimination at a position on the substrate transfer path is static elimination before the substrate 100 and the mask 101 approach each other.

[0047] The static eliminator (ionizer) 350 is a device that outputs ultraviolet light that induces ionization, and may be, for example, a device that employs a method of generating ions using vacuum ultraviolet light (photoionization). The static eliminator (ionizer) 350 can be connected to a vacuum chamber (e.g., the transfer chamber 2 in the configuration example 1 of FIG. 3 ) via a vacuum flange 352. Here, the vacuum flange 352 is a vacuum component that has a sealing function and can connect the vacuum chamber and the static eliminator (ionizer) 350.

[0048] The static eliminator (ionizer) 350 has a vacuum ultraviolet light generation unit 351 (light source unit) and an irradiation unit 353 that irradiates the vacuum ultraviolet light generated by the vacuum ultraviolet light generation unit 351, and vacuum ultraviolet light 354 is irradiated from the irradiation unit 353.

[0049] 3 shows an example in which the static eliminator (ionizer) 350 is provided on both the upper and lower sides of the transfer chamber 302, but in the case of a deposition-up type film formation apparatus 1, when static elimination is performed on the film formation surface 100a of the substrate 100, it is sufficient to provide the static eliminator (ionizer) 350 at least on the lower side of the transfer chamber 302. The transfer robot 302a can adjust the irradiation range of the vacuum ultraviolet light 354 by controlling the position in the Z direction (vertical direction) and adjusting the distance between the irradiation unit 353 and the film formation surface 100a.

[0050] The transfer robot 302a moves in the X direction (horizontal direction) to transfer the substrate 100 to the film formation chamber 303, whereby the film formation surface 100a of the substrate 100 is irradiated with vacuum ultraviolet light 354 on the substrate transfer path before film formation (the state before the substrate 100 and the mask 101 approach each other), and the potential (static electricity) charged on the substrate 100 can be removed. The removal of electricity at this position also occurs before the substrate 100 and the mask 101 approach each other. In order to simultaneously remove electricity from a wider irradiation range on the substrate transfer path before film formation (the state before the substrate 100 and the mask 101 approach each other), multiple static eliminators (ionizers) 350 may be provided in the Y direction (perpendicular to the paper surface).

[0051] <Configuration Example 2 of Static Eliminator: Example of Providing Static Eliminator in Buffer Chamber 306> The location where the static eliminator (ionizer) 350 is provided is not limited to the transfer chamber 302, and vacuum ultraviolet light 354 may be irradiated onto the substrates 100 stored in a stocker that stores the substrates 100 or a substrate storage shelf provided in the buffer chamber 306. In this embodiment, the path up to the point where the substrate 100 is attracted to the electrostatic chuck 15 is defined as the substrate transfer path before film formation. Therefore, the buffer chamber 306 and a stocker that stores the substrates 100 further upstream than the buffer chamber 306 are also included in the substrate transfer path before film formation. Static elimination at a position on the substrate transfer path is static elimination before the substrate 100 and the mask 101 approach each other.

[0052] 4 is a diagram showing a second configuration example of a static eliminator in the film forming apparatus 1 according to the embodiment. As the second configuration example of the static eliminator, FIG. 4 shows an example of a substrate transport path before film formation (a state before the substrate 100 and the mask 101 approach each other), in which a static eliminator (ionizer) 350 is provided in the buffer chamber 306. The substrates 100 stored in the substrate storage shelf of the buffer chamber 306 are stored in a horizontal state with the surface to be processed (film formation surface) facing downward in the direction of gravity (vertically downward), so that the film formation surface 100a of the substrate 100 is on the vertically downward side in FIG.

[0053] The configuration shown in Figure 4 shows an example in which a static eliminator (ionizer) 350 is provided on both the upper and lower sides of the transport chamber 302, but in a deposit-up type film forming apparatus 1, when static elimination is to be performed on the film forming surface 100a of the substrate 100, it is sufficient to provide a static eliminator (ionizer) 350 at least on the lower side of the buffer chamber 306.

[0054] 4 is provided with a plurality of static eliminators (ionizers) 350 in the X direction (horizontal direction) in order to irradiate the substrate 100 with vacuum ultraviolet light 354 over a wide area while the substrate 100 is housed, but it is not essential to provide a plurality of static eliminators 350. For example, if the region of the film formation surface 100a of the substrate 100 that requires static elimination can be neutralized with a single static eliminator (ionizer) 350, it is sufficient to provide at least one static eliminator (ionizer) 350 below the buffer chamber 306.

[0055] <Configuration Example 3 of Static Eliminator: Example of Providing Static Eliminator in Swirling Chamber 307> In this embodiment, the path before the substrate 100 contacts the electrostatic chuck 15 is the substrate transport path before film formation, and therefore, for example, the swirl chamber 307 and the delivery chamber 308 in Fig. 1 are also included in the substrate transport path before film formation. In other words, static elimination at a position on the substrate transport path is static elimination before the substrate 100 and the mask 101 approach each other.

[0056] 5 is a diagram showing a third configuration example of a static eliminator in the film forming apparatus 1 according to the embodiment. As the third configuration example of the static eliminator, FIG. 5 shows an example in which a static eliminator (ionizer) 350 is provided in a swirl chamber 307 as an example of a substrate transport path before film formation (a state before the substrate 100 and the mask 101 approach each other). A transport robot 307a in the swirl chamber 307 moves in the X direction (horizontal direction) to transport the substrate 100 to a delivery chamber 308. As a result, a film formation surface 100a of the substrate 100 is irradiated with vacuum ultraviolet light 354 on the substrate transport path before film formation (a state before the substrate 100 and the mask 101 approach each other), and the potential (static electricity) charged on the substrate 100 can be eliminated. In order to simultaneously neutralize a wider irradiation range on the substrate transport path before film formation (before the substrate 100 and the mask 101 approach each other), a plurality of neutralization devices (ionizers) 350 may be provided in the Y direction (perpendicular to the paper surface). The location where the neutralization devices (ionizers) 350 are provided is not limited to the swirl chamber 307 shown in FIG. 5 , but may also be the delivery chamber 308.

[0057] 5 shows an example in which, similar to Fig. 3, static eliminators (ionizers) 350 are provided on both the upper and lower sides of the swirl chamber 307, but in the case of a deposit-up type film formation apparatus 1, when static elimination is performed on the film formation surface 100a of the substrate 100, it is sufficient to provide the static eliminator (ionizer) 350 at least on the lower side of the swirl chamber 307. The transfer robot 307a can adjust the irradiation range of the vacuum ultraviolet light 354 by controlling the position in the Z direction (vertical direction) and adjusting the distance between the irradiation unit 353 and the film formation surface 100a.

[0058] <Configuration Example 4 of Static Eliminator: Example of Providing Static Eliminator on Side Wall of Film Forming Apparatus 1> Fig. 6 is a diagram showing Configuration Example 4 of the static eliminator in the film forming apparatus 1 according to the embodiment. Fig. 6 shows an example of providing a static eliminator (ionizer) 350 on the side wall of the film forming apparatus 1.

[0059] The substrate 100 is supported by substrate support parts 62 (substrate support claws) that support the peripheral edge of the substrate 100. In this state, the substrate 100 is not attracted to the electrostatic chuck 15. The substrate 100 is also not in contact with the mask 101. In this state, the static eliminator (ionizer) 350 is provided on the side wall of the film forming apparatus 1 so as to irradiate the substrate 100 supported by the substrate support parts 62 with vacuum ultraviolet light 354 from the horizontal direction (X direction).

[0060] As shown in configuration example 4, when the substrate 100 is placed on the substrate support portion 62 and before it is attracted to the electrostatic chuck 15, the charge is removed before the substrate 100 and the mask 101 come close to each other.

[0061] <Configuration Example 5 of Static Eliminator: Example of Providing Static Eliminator on Side Wall of Film Forming Apparatus 1> Fig. 7 is a diagram showing Configuration Example 5 of the static eliminator in the film forming apparatus 1 according to the embodiment. Fig. 7 shows an example of providing a static eliminator (ionizer) 350 on the side wall of the film forming apparatus 1.

[0062] In Configuration Example 5, a static eliminator (ionizer) 350 is provided on a sidewall of the film forming apparatus 1 so as to irradiate the substrate 100 with vacuum ultraviolet light 354 after the substrate 100 has been attracted to the electrostatic chuck 15. Configuration Example 5 differs from Configuration Example 4 ( FIG. 6 ) in that the target to be irradiated with vacuum ultraviolet light 354 is not the substrate 100 (film formation surface 100 a) before it has been attracted to the electrostatic chuck 15, but the substrate 100 (film formation surface 100 a) after it has been attracted to the electrostatic chuck 15. In Configuration Example 5, an example will be described in which the static eliminator of the film forming apparatus 1 eliminates static electricity from the film formation surface 100 a of the substrate 100 after it has been attracted to the electrostatic chuck 15, which is the state before the substrate 100 and the mask 101 approach each other.

[0063] The distance adjustment unit 22 raises and lowers the first lift plate 220, thereby raising and lowering the electrostatic chuck 15 and the substrate 100 attracted to the electrostatic chuck 15, and adjusts the position of the substrate 100 in the vertical direction (Z direction) to a position within the irradiation range of the static eliminator (ionizer) 350. The position can be adjusted so that the film formation surface 100a of the substrate 100 can be neutralized. After the alignment is complete, the static eliminator (ionizer) 350 irradiates the electrostatic chuck 15 with vacuum ultraviolet light 354.

[0064] 6 and 7 show examples in which static eliminators (ionizers) 350 are provided on the side walls of the film forming apparatus 1. When the irradiation range of one static eliminator (ionizer) 350 provided on each of the left and right sides can cover both of the configuration examples 4 and 5, one static eliminator (ionizer) 350 may be provided on each of the left and right sides of the side walls of the film forming apparatus 1.

[0065] 7 illustrates an example in which the static eliminator (ionizer) 350 common to that in Configuration Example 4 ( FIG. 6 ) is used, but the present invention is not limited to this example, and multiple static eliminators (ionizers) 350 may be provided on the left and right side walls. That is, on the left and right sides, a static eliminator (ionizer) 350 (first static eliminator) that irradiates vacuum ultraviolet light 354 onto the substrate 100 (film formation surface 100 a) before it is attracted to the electrostatic chuck 15, and a static eliminator (ionizer) 350 (second static eliminator) that irradiates vacuum ultraviolet light 354 onto the substrate 100 (film formation surface 100 a) after it has been attracted to the electrostatic chuck 15 may be provided.

[0066] As shown in Configuration Example 5, after the substrate 100 is attracted to the electrostatic chuck 15, static elimination is performed before the substrate 100 and the mask 101 approach each other, as in Configuration Example 4 (FIG. 6).

[0067] As shown in Configuration Examples 1 to 5, by using a static eliminator (ionizer) 350 to irradiate vacuum ultraviolet light 354 onto the substrate 100 (film formation surface 100a), the potential charged on the film formation surface 100a of the substrate 100 can be eliminated.

[0068] <Configuration Example 6 of Static Eliminator: Example Using Static Dissipative Material: Substrate Support> In Configuration Examples 1 to 5, configurations using the static eliminator (ionizer) 350 have been described, but the configuration of the static eliminator is not limited to these examples. For example, a static diffusive material may be used. A static diffusive material is a material that has the property of diffusing charged electric charges (static dissipative properties). Here, having "static dissipative properties" means that the surface resistance (Rs) measured in accordance with the provisions of IEC 61340-5-1 and 5-2 is 1×10 or less. ４ Ω or more, 1×10 １１ A material has a surface resistance value of less than Ω. This range of surface resistance values ​​(Rs) is also referred to as the static electricity dissipative region. Hereinafter, a material having static electricity dissipative properties is also referred to as a static electricity dissipative material.

[0069] The static electricity dissipative material may be, for example, a resin (e.g., a thermosetting resin) or ceramics in the static electricity dissipative region. The static electricity dissipative material can be molded into parts of various shapes so as to easily come into contact with the member to be de-electrified (the film-forming surface 100a of the substrate 100).

[0070] In configuration example 6, an example will be described in which the static eliminator of the film forming apparatus 1 eliminates static electricity from the film forming surface 100a of the substrate 100 in a state after the substrate 100 is attracted to the electrostatic chuck 15, which is a state before the substrate 100 and the mask 101 approach each other. In configuration example 6 of the static eliminator, an example will be described in which the substrate support part 62 that contacts the peripheral edge of the film forming surface 100a of the substrate 100 is made of a static electricity dissipative material at the peripheral edge of the substrate 100. Figure 8 is a diagram showing configuration example 6 of the static eliminator in the film forming apparatus 1 according to the embodiment. In Figure 8, the substrate support part 62, base part 61, and actuator 65 made of a static electricity dissipative material are referred to as the static eliminator.

[0071] 8 shows a film forming apparatus 1 to which Configuration Example 6 is applied, and the basic configuration is the same as that of the film forming apparatus 1 described in FIG. 2, but differs in that the substrate support 62 is formed from a static electricity dissipative material as a configuration of a static eliminator. The base 61, the substrate support 62, and the actuator 65 are provided as at least a pair on the left and right. Note that the base 61, the substrate support 62, and the actuator 65 may be further provided in the direction perpendicular to the plane of the drawing so as to surround the peripheral edge of the substrate 100.

[0072] As a component formed from a static-dissipative material, the substrate support portion 62 comes into contact with the film-forming surface 100a of the substrate 100 when supporting the peripheral edge of the substrate 100. When the substrate 100 is carried into the vacuum chamber 3 of the film-forming apparatus 1 and placed on the substrate support portion 62, the peripheral edge of the film-forming surface 100a of the substrate 100 comes into contact with the substrate support portion 62 formed from a static-dissipative material, thereby eliminating static electricity. As shown in Configuration Example 6, when the substrate 100 is placed on the substrate support portion 62 and before it is attracted to the electrostatic chuck 15, static electricity is also removed before the substrate 100 and the mask 101 come close to each other.

[0073] <Configuration Example 7 of the Static Eliminator: Example Using Static Dissipative Material: Protrusion Shape> In Configuration Example 7, an example will be described in which the static eliminator of the film forming apparatus 1 eliminates static from the film forming surface 100a of the substrate 100 in a state after the substrate 100 is attracted to the electrostatic chuck 15, which is a state before the substrate 100 and the mask 101 approach each other. Figure 9 is a diagram showing Configuration Example 7 of the static eliminator in the film forming apparatus 1 according to an embodiment. As Configuration Example 7 of the static eliminator, an example of a part having a protrusion shape (pin shape) formed from a static dissipative material 504 is shown.

[0074] In configuration example 7, a protruding (pin-shaped) component formed from the static electricity dissipative material 504 comes into contact with the film formation surface 100a of the substrate 100 attracted to the electrostatic chuck 15. The static eliminator hand 503 holding the protruding (pin-shaped) component formed from the static electricity dissipative material 504 is placed on the transfer robot 302a and is transferred from the transfer chamber 302 to the film formation chamber 303 (vacuum chamber) by the transfer robot 302a. The static eliminator hand 503 transferred into the film formation chamber 303 (vacuum chamber) is then raised vertically upward by the transfer robot 302a, and the protruding (pin-shaped) component comes into contact with the film formation surface 100a of the substrate 100.

[0075] When a protruding (pin-shaped) part formed from the static electricity dissipative material 504 comes into contact with the film formation surface 100a of the substrate 100, the potential charged on the film formation surface 100a of the substrate 100 can be neutralized. As shown in Configuration Example 7, neutralization after the substrate 100 has been attracted to the electrostatic chuck 15 also occurs before the substrate 100 and the mask 101 approach each other. In Configuration Example 7, the neutralization hand 503 is stored, for example, in the mask storage chamber 305, and the transfer robot 302a removes the neutralization hand 503 from the mask storage chamber 305 at the timing of neutralization processing, and performs the neutralization processing. Note that the location where the neutralization hand 503 is stored is not limited to within the mask storage chamber 305, and a separate space for storing the neutralization hand 503 may be provided.

[0076] <Configuration Example 8 of the Static Eliminator: Example Using Static Dissipative Material: Sheet Shape> In Configuration Example 8, an example will be described in which the static eliminator of the film forming apparatus 1 eliminates static from the film forming surface 100a of the substrate 100 in a state after the substrate 100 has been attracted to the electrostatic chuck 15, which is a state before the substrate 100 and the mask 101 approach each other. Figure 10 is a diagram showing Configuration Example 8 of the static eliminator in the film forming apparatus 1 according to an embodiment. As Configuration Example 8 of the static eliminator, an example of a sheet-shaped (plate-shaped) part having a two-dimensional extension formed from a static dissipative material 504 is shown.

[0077] In configuration example 8, a sheet-shaped component formed from the static electricity dissipative material 504 comes into contact with the film formation surface 100a of the substrate 100 attracted to the electrostatic chuck 15. A static eliminator hand 503 holding the sheet-shaped component via a sheet holding member 505 is placed on the transfer robot 302a, and is transferred from the transfer chamber 302 to the film formation chamber 303 (vacuum chamber) by the transfer robot 302a. The static eliminator hand 503 transferred into the film formation chamber 303 (vacuum chamber) is then raised vertically upward by the transfer robot 302a, and the sheet-shaped component formed from the static electricity dissipative material 504 comes into contact with the film formation surface 100a of the substrate 100.

[0078] When a sheet-shaped component formed from the static electricity dissipative material 504 comes into contact with the film formation surface 100a of the substrate 100, the potential charged on the film formation surface 100a of the substrate 100 can be neutralized. As shown in Configuration Example 8, neutralization after the substrate 100 has been attracted to the electrostatic chuck 15 also occurs before the substrate 100 and the mask 101 approach each other. In Configuration Example 8, the neutralization hand 503 is stored, for example, in the mask storage chamber 305, and the transfer robot 302a removes the neutralization hand 503 from the mask storage chamber 305 at the timing of neutralization processing, and performs the neutralization processing. Note that the location where the neutralization hand 503 is stored is not limited to within the mask storage chamber 305, and a separate space for storing the neutralization hand 503 may be provided.

[0079] 11 is a flowchart showing the overall processing flow of the film forming apparatus 1. This flowchart shows an outline of the steps that the film forming apparatus 1 performs on one substrate 100.

[0080] In ST1 and ST2, S201 is a pre-treatment step in which a static elimination process is performed by a static eliminator as a pre-treatment for the film forming process.

[0081] The pretreatment process ST1 (S201) is a pretreatment (neutralization process) that is performed before the adsorption process (S202), and in this case, the neutralization process can be performed using any of configuration examples 1 to 4 and configuration example 6.

[0082] When the static elimination process is performed not only in the pretreatment process (S201) of ST1 but also in any of Configuration Examples 5, 7, and 8, it is sufficient to perform the static elimination process in the pretreatment process (S201) after the adsorption process (S202) according to the flowchart of ST2 in any of Configuration Examples 5, 7, and 8. In either of the flowcharts of ST1 and ST2, according to the film forming apparatus 1 of this embodiment, the film forming surface 100a of the substrate 100 can be neutralized by adjusting the positions of the adjustment mechanisms (7, 8, 20, 22) before the substrate 100 and the mask 101 approach each other.

[0083] In step S202, the control device 14 raises the substrate support unit 6 supporting the substrate 100 to a predetermined position. The control device 14 applies a changed voltage to the electrode portion of the electrostatic chuck 15 to generate an attraction force, thereby attracting the substrate 100 to the electrostatic chuck 15.

[0084] Step S203 is an alignment step in which the control device 14 lowers the electrostatic chuck 15, which attracts the substrate 100, using the distance adjustment unit 22 to bring the substrate 100 closer to the mask 101. Then, the position adjustment unit 20 adjusts the horizontal positions of the substrate 100 and the mask 101.

[0085] S204 is a film formation step. In preparation for this step, the control device 14 brings the substrate 100, which has been aligned, into contact with the mask 101. Next, the control device 14 lowers the plate unit 9 to bring the substrate 100 and the mask 101 into closer contact with each other using the magnetic force of the magnetic plate 11. In this state, the control device 14 causes the film formation unit 4 to deposit the deposition material onto the substrate 100.

[0086] In step S205, the control device 14 stops the application of voltage to the electrode portion of the electrostatic chuck 15, thereby separating the substrate 100 from the electrostatic chuck 15. Alternatively, the control device 14 may reduce the voltage applied to the electrode portion to such an extent that the electrostatic chuck 15 cannot maintain the attraction of the substrate 100, without stopping the application of voltage to the electrode portion.

[0087] In step S206, the substrate 100 is unloaded from the film forming apparatus by the transport robot 302a.

[0088] According to this embodiment, by adjusting the relative positions of the mask and the substrate, it is possible to remove static electricity from the film formation surface of the substrate before the mask and the substrate approach each other. Note that, although the film formation apparatus 1 of this embodiment has been described as using the electrostatic chuck 15, the present invention is not limited to this example, and the disclosed technology can solve the same problems and achieve the same effects even in a film formation apparatus that does not use the electrostatic chuck 15.

[0089] The present invention can also be realized by a process in which a program that realizes one or more of the functions of the above-described embodiments is supplied to a system or device via a network or a storage medium, and one or more processors in a computer of the system or device read and execute the program. The present invention can also be realized by a circuit (e.g., an ASIC) that realizes one or more of the functions.

[0090] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention.

[0091] This application claims priority based on Japanese Patent Application No. 2023-156498, filed September 21, 2023, the entire contents of which are incorporated herein by reference.

[0092] 1: film forming apparatus, 14: control device, 15: electrostatic chuck, 8: alignment unit, 10: deposition unit (film forming source), 62: substrate support portion (substrate support claws), 100: substrate, 100a: film forming surface (substrate), 101: mask, 150: attraction surface (electrostatic chuck), 302a: transfer robot, 307a: transfer robot, 350: static eliminator (ionizer), 501: static eliminator (static eliminator robot), 504: static electricity dissipative material

Claims

1. A film formation apparatus having an adjustment means for adjusting the relative positions of a substrate and a mask based on the measurement results of alignment marks formed on the substrate and the mask, respectively, and for forming a film of a deposition material through the mask on a film formation surface of the substrate attracted to an electrostatic chuck, characterized in that the film formation apparatus further comprises a charge removal means for removing electricity from the film formation surface of the substrate before the substrate and the mask approach each other by adjusting the position of the adjustment means.

2. The film forming apparatus according to claim 1, characterized in that the charge removal means removes electricity from the film forming surface of the substrate before the substrate and the mask approach each other and before the substrate is attracted to the electrostatic chuck.

3. The film forming apparatus according to claim 1, characterized in that the charge removal means removes charge from the film forming surface of the substrate before the substrate and the mask approach each other and after the substrate is attracted to the electrostatic chuck.

4. A film forming apparatus according to any one of claims 1 to 3, characterized in that the charge removing means includes an ionizer that irradiates the film forming surface of the substrate with ultraviolet light that induces ionization.

5. The static electricity removing means is 1×10 ４ Ω or more, 1×10 １１ 4. The film forming apparatus according to claim 1, wherein a part molded from a substance having electrostatic dissipation properties and a surface resistance of less than Ω is brought into contact with the film forming surface to neutralize the film forming surface.

6. The film forming apparatus according to claim 5, characterized in that the static electricity removal means removes static electricity from the film forming surface by contacting a part having a plurality of protrusions or a part having a sheet shape with a two-dimensional extension, which is formed from the substance having static electricity diffusion properties, with the film forming surface.

7. The film forming apparatus according to claim 5, characterized in that the static electricity removal means is provided with a substrate support means which is a part molded from a material having electrostatic dissipation properties and which comes into contact with the film forming surface of the substrate when supporting the peripheral edge of the substrate.

8. The film forming apparatus according to claim 1, wherein said adjustment means adjusts the relative positions of said substrate attracted to said electrostatic chuck and said mask.

9. The film forming apparatus according to claim 1, wherein the mask has a mask foil having a thickness of 10 μm or more and 100 μm or less, attached to a mask frame.

10. The film formation apparatus according to claim 1, characterized in that the film formation apparatus is a deposit-up type film formation apparatus, the vertically upper surface of the substrate is an adsorption surface that is adsorbed to the electrostatic chuck, the vertically lower surface of the substrate is a film formation surface, and a thin film of a deposition material having a predetermined pattern is formed on the film formation surface of the substrate via the mask.

11. A film formation apparatus having an adjustment means for adjusting the relative positions of a substrate and a mask based on the measurement results of alignment marks formed on the substrate and the mask, respectively, and for forming a film of a deposition material on the film formation surface of the substrate through the mask, characterized in that the film formation apparatus further comprises a charge removal means for removing electricity from the film formation surface of the substrate before the substrate and the mask approach each other by adjusting the position of the adjustment means.

12. A film formation method for a film formation apparatus having an adjustment means for adjusting the relative positions of a substrate and a mask based on the measurement results of alignment marks formed on the substrate and the mask, respectively, and forming a film of a deposition material through the mask on a film formation surface of the substrate attracted to an electrostatic chuck, the film formation method comprising a discharge step for discharging electricity from the film formation surface of the substrate by adjusting the position of the adjustment means before the substrate and the mask approach each other.

13. A film formation method for a film formation apparatus having an adjustment means for adjusting the relative positions of a substrate and a mask based on the measurement results of alignment marks formed on the substrate and the mask, respectively, and forming a film of a deposition material on the film formation surface of the substrate through the mask, the film formation method comprising a discharge step for discharging electricity from the film formation surface of the substrate by adjusting the position of the adjustment means before the substrate and the mask approach each other.

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