Method for storing and acquiring information by using fluorescence defects in wide-bandgap material

Abstract

The present disclosure can be applied to the technical field of optical information storage. Provided are a method and apparatus for storing and acquiring information by using fluorescence defects in a wide-bandgap material, and a device and a storage medium. The method comprises: determining a processing parameter group, wherein the processing parameter group is used for storing target information in a wide-bandgap material, and the processing parameter group comprises at least one processing parameter; and on the basis of the processing parameter group, performing processing at M storage addresses of the wide-bandgap material, such that fluorescence defects that match the target information are generated at the M storage addresses, wherein M is a positive integer.

Description

Method for storing and acquiring information using fluorescent defects in wide bandgap materials Technical Field

[0001] The present disclosure relates to the field of optical information storage technology, and in particular to a method, device, equipment, and storage medium for storing and acquiring information by utilizing fluorescent defects in wide bandgap materials. Background Art

[0002] With the rapid development of science and technology, the amount of computer data is increasing. Existing technologies allow for the storage of such computer data through various information storage methods, such as magnetic storage, electrical storage, and optical storage. However, magnetic and electrical storage require high storage environments and are prone to data loss due to demagnetization, leakage, and other factors. Optical storage, on the other hand, has a relatively small storage capacity and is unable to store large amounts of computer data.

[0003] Summary of the Invention

[0004] In view of the above problems, the present disclosure provides a method, apparatus, device, and medium for storing information using fluorescent defects in wide bandgap materials.

[0005] According to a first aspect of the present disclosure, a method for storing information using fluorescent defects in wide bandgap materials is provided, comprising: determining a processing parameter group, wherein the processing parameter group is used to store target information in the wide bandgap material, and the processing parameter group includes at least one processing parameter; based on the processing parameter group, processing is performed at M storage addresses of the wide bandgap material so that fluorescent defects matching the target information are generated at the M storage addresses, where M is a positive integer.

[0006] According to an embodiment of the present disclosure, the method for storing information using fluorescent defects in wide bandgap materials further includes:

[0007] Determining the number of storage units used to store the target information based on the number of encoding bits of the target information; and

[0008] The storage addresses of M storage cells are determined from unprocessed storage cells in the wide bandgap material to obtain M storage addresses.

[0009] According to an embodiment of the present disclosure, determining the processing parameter group includes:

[0010] According to the preset coding length, the target information is split into M target sub-information;

[0011] Based on the preset mapping relationship, Q processing parameters corresponding to each target sub-information are determined to obtain a processing parameter group, where Q is a positive integer greater than or equal to ;

[0012] Among them, Q processing parameters are commonly used to process a storage address in the wide bandgap material, and each storage address is used to store a target sub-information.

[0013] According to an embodiment of the present disclosure, the processing parameters include at least one of the following: energy, length, number, intensity, polarization of light pulses and intervals between light pulses.

[0014] According to an embodiment of the present disclosure, the types of fluorescent defects include: single vacancy fluorescent defects, double vacancy fluorescent defects, doped atomic fluorescent defects or composite fluorescent defects composed of doped atomic fluorescent defects and vacancy doped atoms; the wide bandgap material includes at least one of the following: diamond, silicon carbide, gallium nitride, aluminum nitride, zinc oxide and lithium niobate.

[0015] According to an embodiment of the present disclosure, before processing at M storage addresses of the wide bandgap material based on a processing parameter group, it also includes: performing wavefront correction on the laser used to process the wide bandgap material so that the focus of the laser is located at the M storage addresses.

[0016] According to an embodiment of the present disclosure, a method for reading information using fluorescent defects in a wide bandgap material includes:

[0017] collecting fluorescence information at M storage addresses in the wide bandgap material, wherein the fluorescence information is used to characterize the distribution of fluorescence defects at each storage address, the fluorescence defects being matched with target information, and the fluorescence defects being generated after processing the wide bandgap material at the M storage addresses based on the processing parameter set, where M is a positive integer; and

[0018] The fluorescence information is decoded to obtain the target information.

[0019] According to an embodiment of the present disclosure, the fluorescence information includes intensity spatial distribution, wavelength spatial distribution, and polarization spatial distribution of the fluorescence signal.

[0020] A second aspect of the present disclosure provides a method for reading information using fluorescent defects in a wide bandgap material, comprising:

[0021] collecting fluorescence information at M storage addresses in the wide bandgap material, wherein the fluorescence information is used to characterize the distribution of fluorescence defects at each storage address, the fluorescence defects being matched with target information, and the fluorescence defects being generated after processing the wide bandgap material at the M storage addresses based on the processing parameter set, where M is a positive integer; and

[0022] The fluorescence information is decoded to obtain the target information.

[0023] A third aspect of the present disclosure provides a processing device for storing information using fluorescent defects in a wide bandgap material, comprising:

[0024] Lasers for generating laser light for processing wide bandgap materials;

[0025] A laser control device is used to control the processing parameters of the laser according to the processing parameter group, and use the laser after the processing parameters are adjusted to process M storage addresses of the wide bandgap material, so that fluorescent defects matching the target information are generated at the M storage addresses. The processing parameter group is used to store the target information in the wide bandgap material. The processing parameter group includes at least one processing parameter, and M is a positive integer.

[0026] A fourth aspect of the present disclosure provides a reading device for storing information using fluorescent defects in a wide bandgap material, comprising:

[0027] A fluorescent signal excitation source is used to excite fluorescent defects at M storage addresses in the wide bandgap material, so that the fluorescent defects at the M storage addresses generate fluorescent information, the fluorescent information is used to characterize the distribution of the fluorescent defects, the fluorescent defects are matched with the target information, and the fluorescent defects are generated after processing at the M storage addresses based on the processing parameter set;

[0028] The fluorescence signal acquisition device is used to collect fluorescence information so as to decode the fluorescence information and obtain target information.

[0029] According to the embodiments of the present disclosure, after processing the wide bandgap material at any storage address, the structure of the wide bandgap material at that storage address changes, generating various fluorescent defects. The distribution of the fluorescent defects can carry information, so the target information can be stored in the wide bandgap material using the fluorescent defects. In addition, the wide bandgap material has excellent high temperature tolerance and strong electric field tolerance, which can achieve long-term storage of target information.

[0030] Therefore, the embodiment of the present disclosure determines a processing parameter group and, based on the processing parameter group, performs processing at M storage addresses of the wide bandgap material, so that fluorescent defects matching the target information are generated at the M storage addresses, thereby achieving information storage with high storage density, long storage life and low energy consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The above contents and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0032] FIG1 schematically shows a flow chart of information storage using fluorescent defects in wide bandgap materials according to an embodiment of the present disclosure;

[0033] FIG2 schematically shows a schematic diagram of a system for storing and reading information using fluorescent defects in wide bandgap materials according to an embodiment of the present disclosure;

[0034] FIG3 schematically shows a device for storing and reading information using fluorescent defects in a wide bandgap material according to a specific embodiment of the present disclosure; and

[0035] FIG4 schematically shows a fluorescence signal diagram according to a specific embodiment of the present disclosure. DETAILED DESCRIPTION

[0036] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present disclosure. In the detailed description below, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0037] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise," "include," etc. used herein indicate the presence of the features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0038] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0039] When expressions such as "at least one of A, B and C, etc." are used, they should generally be interpreted in accordance with the meaning of the expression commonly understood by those skilled in the art (for example, "a system having at least one of A, B and C" should include but is not limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc.).

[0040] In the technical solution of the present invention, the user information involved (including but not limited to user personal information, user image information, user device information, such as location information, etc.) and data (including but not limited to data used for analysis, stored data, displayed data, etc.) are all information and data authorized by the user or fully authorized by all parties, and the collection, storage, use, processing, transmission, provision, disclosure and application of relevant data comply with the relevant laws, regulations and standards of relevant countries and regions, take necessary confidentiality measures, do not violate public order and good morals, and provide corresponding operation entrances for users to choose to authorize or refuse.

[0041] To this end, an embodiment of the present disclosure provides a method for storing information using fluorescent defects in wide bandgap materials, including determining a processing parameter group, wherein the processing parameter group is used to store target information in the wide bandgap material, and the processing parameter group includes at least one processing parameter; based on the processing parameter group, processing is performed at M storage addresses of the wide bandgap material so that fluorescent defects matching the target information are generated at the M storage addresses, where M is a positive integer.

[0042] FIG1 schematically shows a flow chart of a method for storing information using fluorescent defects in a wide bandgap material according to an embodiment of the present disclosure.

[0043] As shown in FIG. 1 , the method 100 includes operations S110 to S120 .

[0044] In operation S110 , a processing parameter group is determined, wherein the processing parameter group is used to store target information in a wide bandgap material, and the processing parameter group includes at least one processing parameter.

[0045] According to an embodiment of the present disclosure, the target information includes information in various forms, such as text information, image information, symbol information, etc. In an embodiment of the present disclosure, the target information may also be encoded into a binary form by a computer.

[0046] According to an embodiment of the present disclosure, the processing parameters include control parameters of an apparatus for processing wide bandgap materials or parameters of an output laser, etc.

[0047] For example, the processing parameters are control parameters of the femtosecond laser processing system, such as the energy of the light pulse, the number of light pulses, etc.

[0048] According to an embodiment of the present disclosure, a processing parameter group includes at least one processing parameter belonging to a different processing parameter type. Different processing parameters may include the same processing parameter type and / or the same number of processing parameters, but the parameter values ​​of the processing parameters in different processing parameter groups are different.

[0049] For example, for target information 1, the processing parameter group may include one energy parameter; for target information 2, the processing parameter group may include one energy parameter and one polarization parameter.

[0050] In operation S120 , processing is performed at M storage addresses of the wide bandgap material based on the processing parameter set, so that fluorescent defects matching target information are generated at the M storage addresses, where M is a positive integer.

[0051] According to the embodiments of the present disclosure, since the wide bandgap material has a wide bandgap, many energy level defects can exist in the bandgap. Some of these defects emit fluorescence when excited by a specific light field, and are therefore called fluorescence defects.

[0052] According to an embodiment of the present disclosure, multiple target information corresponds to multiple fluorescent defects. When the wide bandgap material is processed using different processing parameter groups, multiple types of fluorescent defects can be generated, thereby storing diverse target information.

[0053] For example, fluorescent defects of multiple defect types can store multiple target information; for a defect type, fluorescent defects with multiple density distributions can store multiple target information.

[0054] According to the embodiments of the present disclosure, after processing the wide bandgap material at any storage address, the structure of the wide bandgap material at that storage address changes, generating various fluorescent defects. The distribution of the fluorescent defects can carry information, so the target information can be stored in the wide bandgap material using the fluorescent defects. In addition, the wide bandgap material has excellent high temperature tolerance and strong electric field tolerance, which can achieve long-term storage of target information.

[0055] Therefore, the embodiment of the present disclosure determines a processing parameter group and, based on the processing parameter group, performs processing at M storage addresses of the wide bandgap material, so that fluorescent defects matching the target information are generated at the M storage addresses, thereby achieving information storage with high storage density, long storage life and low energy consumption.

[0056] According to an embodiment of the present disclosure, a method for storing information using fluorescent defects in a wide bandgap material also includes: determining the number of storage units used to store target information based on the number of coding bits of the target information; and determining the storage addresses of M storage units from unprocessed storage units in the wide bandgap material to obtain M storage addresses.

[0057] According to an embodiment of the present disclosure, the number of coding bits is the length of the coded information after the target information is encoded using a preset coding method. For example, after the target information is encoded into binary information "110101110", the number of coding bits is 9.

[0058] According to an embodiment of the present disclosure, each storage address corresponds to a storage unit, which can be understood as a virtual storage location for storing computer data. After the storage address of a single storage unit is processed, the single storage unit may include one or more fluorescent defect types.

[0059] According to an embodiment of the present disclosure, the length of target information that can be stored in each storage unit is limited. Therefore, the number of storage units used to store the target information can be determined according to the number of encoding bits of the target information to be stored.

[0060] For example, still taking the target information as "110101110" as an example, if each storage unit can store information of 3 lengths, the target information requires 3 storage units.

[0061] According to an embodiment of the present disclosure, after determining the number of storage cells for storing target information, M storage cells can be randomly determined from unprocessed storage cells in the wide bandgap material, and the storage addresses of the M storage cells can be used as storage addresses to be processed.

[0062] As another embodiment of the present disclosure, wide bandgap materials can be divided into regions based on processing parameter types. After determining the number of memory cells used to store target information, a target processing region can be determined based on the processing parameter types in the processing parameter group. M memory cells are selected from the unprocessed memory cells in the target processing region to obtain storage addresses for the M memory cells.

[0063] According to an embodiment of the present disclosure, determining a processing parameter group includes: splitting the target information into M target sub-information according to a preset coding length; determining Q processing parameters corresponding to each target sub-information based on a preset mapping relationship to obtain a processing parameter group, where Q is a positive integer greater than or equal to 1; wherein the Q processing parameters are commonly used to process a storage address in a wide bandgap material, and each storage address is used to store a target sub-information.

[0064] According to an embodiment of the present disclosure, the preset coding length is the information length that can be stored in one storage unit, for example, 3. After determining the target information, the target information can be split into M target sub-information in sequence with the preset coding length as the minimum granularity unit.

[0065] According to an embodiment of the present disclosure, the lateral length of each storage unit is about 500 nm and the longitudinal length is about 2 μm, so as to ensure that two storage units can be spatially distinguished.

[0066] According to another embodiment of the present disclosure, the fluorescence signal of the fluorescent defect at the storage unit can be read through a super-resolution scheme. In this case, the distance between the storage units can exceed the optical diffraction limit, that is, the lateral length of the storage unit is less than 500nm and the vertical length is less than 2um. According to an embodiment of the present disclosure, the target sub-information can be regarded as standard coding information. Based on the information length that the storage unit can store, a mapping relationship between the standard coding information and the processing parameters is pre-established, that is, a preset mapping relationship. For example, the processing parameter corresponding to "000" is the energy "5nJ".

[0067] According to an embodiment of the present disclosure, after the target information is split into M target sub-information, based on a pre-established preset mapping relationship, at least one processing parameter corresponding to each target sub-information can be determined, and then multiple processing parameters constituting a processing parameter group can be determined.

[0068] According to embodiments of the present disclosure, the same target sub-information, serving as standard coded information, can correspond to multiple sets of processing parameters. For example, a preset mapping relationship exists between the target sub-information "000" and the energy "5nJ." The target sub-information "000" can also be mapped to the energy and polarization of a light pulse.

[0069] It should be noted that after the wide bandgap material is processed based on the processing parameter set, the fluorescent signal of the fluorescent defect uniquely corresponds to one target sub-information.

[0070] According to an embodiment of the present disclosure, the processing parameters include at least one of the following: energy, length, number, intensity, polarization of the light pulses, and intervals between the light pulses.

[0071] According to the embodiments of the present disclosure, the encoding dimension of the stored information can be increased by adjusting the number of light pulses used to write information. For example, each storage cell can be used to write only a single light pulse, minimizing the size of the information storage cell and maximizing the information storage density of the wide-bandgap material. Alternatively, information A can be written to storage cell A using a single light pulse, while information B can be written to storage cell B using two or more light pulses.

[0072] According to an embodiment of the present disclosure, the type of fluorescent defect includes at least one of the following: a single vacancy fluorescent defect, a double vacancy fluorescent defect, and a vacancy-doped atomic fluorescent defect.

[0073] According to an embodiment of the present disclosure, the wide bandgap material includes at least one of the following: diamond, silicon carbide, gallium nitride, aluminum nitride, zinc oxide, and lithium niobate.

[0074] According to the embodiments of the present disclosure, the wide bandgap material itself has stable performance, low requirements for the storage environment, and allows the existence of many defect energy levels in the band gap. Therefore, the method of optical information storage based on fluorescent defects in wide bandgap materials provided by the present disclosure can meet the information storage requirements of high storage density, long storage life and low energy consumption.

[0075] For example, for the target information 101001010100, four target sub-information 101, 001, 010 and 100 can be obtained. The target information can be stored at the storage addresses 0, 1, 2 and 3 of the raw storage unit, and each storage address is used to store the target sub-information 101, 001, 010 and 100 respectively.

[0076] Still taking the processing parameter as the energy of the light pulse as an example, according to the preset mapping relationship, the write energy corresponding to each storage address can be determined to be 10nJ, 6nJ, 7nJ, and 9nJ. That is, the determined processing parameter group is 10nJ, 6nJ, 7nJ, and 9nJ, and the processing plan is: write the fluorescent defect at position 0 with an energy of 10nJ, write the fluorescent defect at position 1 with an energy of 6nJ, write the fluorescent defect at position 2 with an energy of 7nJ, and write the fluorescent defect at position 3 with an energy of 9nJ.

[0077] According to an embodiment of the present disclosure, before processing at M storage addresses of the wide bandgap material based on a processing parameter group, it also includes: performing wavefront correction on the laser used to process the wide bandgap material so that the focus of the laser is located at the M storage addresses.

[0078] According to an embodiment of the present disclosure, the parameters of the laser used to process the wide bandgap material are partially identical to the parameters in the processing parameter set, for example, the energy is the same.

[0079] According to an embodiment of the present disclosure, if the refractive index of the wide bandgap material is different from the working medium of the objective lens in the device for collecting fluorescence signals, the laser wavefront will be distorted after it is converged by the objective lens and reaches the interface of the wide bandgap material through the working medium of the objective lens, thereby causing the laser focus to diffuse inside the wide bandgap material, thereby reducing the processing accuracy.

[0080] Therefore, before processing the wide bandgap material according to the processing parameter set, the wavefront of the processed laser can be corrected so that when the laser is converged by the objective lens and reaches the interface of the wide bandgap material through the objective lens working medium, the focus of the laser falls on each processing storage address, providing optimal processing accuracy.

[0081] According to an embodiment of the present disclosure, a method for reading information using fluorescent defects in a wide bandgap material includes: collecting fluorescent information at M storage addresses in the wide bandgap material, wherein the fluorescent information is used to characterize the distribution of fluorescent defects at each storage address, the fluorescent defects are matched with target information, and the fluorescent defects are generated after processing at M storage addresses of the wide bandgap material based on a processing parameter group, where M is a positive integer; and decoding the fluorescent information to obtain target information.

[0082] According to the embodiments of the present disclosure, a relationship between a fluorescent signal representing the distribution of fluorescent defects and stored information can be pre-established, so that target information can be obtained by decoding the collected fluorescent signal.

[0083] According to an embodiment of the present disclosure, the fluorescence information includes the intensity spatial distribution, wavelength spatial distribution, and polarization spatial distribution of the fluorescence signal.

[0084] For example, the intensity of the fluorescent signal at storage address 1 is 4, and the target sub-information stored at storage address 1 is obtained by decoding as “001”.

[0085] According to an embodiment of the present disclosure, since errors are stored during the processing, target information can be determined based on the parameter interval in which the fluorescence signal is located.

[0086] For example, when the fluorescence signal includes fluorescence intensity, the pre-defined parameter intervals may be 1-2 MHz / s, 2-3 MHz / s, 3-4 MHz / s, 4-5 MHz / s, 5-6 MHz / s, 6-7 MHz / s, 7-8 MHz / s, and 8-9 MHz / s. The encoding information corresponding to these parameter intervals is 001, 010, 100, 101, 110, 011, 011, and 111, respectively.

[0087] Therefore, when the fluorescence intensity of the fluorescent defect at storage address 1 is decoded to be 1.5 MHz / s, the target sub-information at storage address 1 is obtained as 001. For the stored target information "101001010100", the fluorescence signals at M storage addresses can be decoded separately to obtain the target information "101001010100".

[0088] According to the embodiments of the present disclosure, by reading the fluorescence information of different storage addresses, the fluorescence defect distribution of each storage address is obtained, and decoding is performed based on the fluorescence signal to obtain the target information, realize the reading of the target information, and store information with high storage density, long storage life and low energy consumption.

[0089] According to an embodiment of the present disclosure, the fluorescence information includes the intensity spatial distribution, wavelength spatial distribution, and polarization spatial distribution of the fluorescence signal.

[0090] According to an embodiment of the present disclosure, a processing device for storing information using fluorescent defects in a wide bandgap material includes: a laser for generating laser light for processing the wide bandgap material; a laser control device for controlling the processing parameters of the laser light according to a processing parameter group, and using the laser light after controlling the processing parameters to perform processing at M storage addresses of the wide bandgap material, so that fluorescent defects matching the target information are generated at the M storage addresses, the processing parameter group is used to store the target information in the wide bandgap material, the processing parameter group includes at least one processing parameter, and M is a positive integer.

[0091] According to an embodiment of the present disclosure, a laser is used to emit laser light, and may be, for example, a femtosecond laser. A laser control device is used to adjust the light pulse energy, light pulse length, number of light pulses, intervals between light pulses, intensity distribution of the light pulses, and polarization of the light pulses emitted by the laser.

[0092] According to an embodiment of the present disclosure, the laser control device may be a femtosecond laser control module.

[0093] As a specific embodiment of the present disclosure, the laser control device can be obtained by combining a pulse picker, a half-wave plate, a polarizer, and a deformable mirror.

[0094] According to embodiments of the present disclosure, a laser mode converter or spatial light modulation system may be optionally incorporated into the laser control device to generate multiple focal points for parallel writing of target information, thereby increasing the speed of information writing. Alternatively, the laser control device may be formed by combining an optical shutter, a mode converter, a spatial light modulator, and a diffractive optical element.

[0095] According to an embodiment of the present disclosure, the processing device for storing information using fluorescent defects in wide bandgap materials may further include a sample position control module for controlling the processing position of the laser light emitted by the laser.

[0096] As a specific embodiment, the sample position control module may include a three-dimensional displacement device and a movable reflector. Alternatively, the sample position control module may also be a movable optical module for adjusting the laser focus position.

[0097] According to an embodiment of the present disclosure, a reading device for storing information using fluorescent defects in a wide bandgap material includes: a fluorescent signal excitation source for exciting fluorescent defects at M storage addresses in the wide bandgap material, so that the fluorescent defects at the M storage addresses generate fluorescent information, the fluorescent information is used to characterize the distribution of the fluorescent defects, the fluorescent defects are matched with target information, and the fluorescent defects are generated after processing at the M storage addresses based on a processing parameter group; a fluorescent signal acquisition device for acquiring the fluorescent information so as to decode the fluorescent information and obtain the target information.

[0098] According to embodiments of the present disclosure, a fluorescence signal excitation source is used to excite fluorescence defects in processed wide-bandgap materials to an excited state, causing the defects to emit a fluorescence signal. This fluorescence signal excitation source can be a continuous-wave laser or a pulsed laser; it can also be an electronic excitation source, such as an electrode that can induce carrier transfer in the material; or a combination of these excitation sources.

[0099] For example, the fluorescence signal excitation source may be a continuous laser with a wavelength of 532 nanometers, so as to excite the fluorescence defects in the processed wide bandgap material to an excited state. For example, the laser emitted by the fluorescence signal excitation source is a femtosecond laser.

[0100] The fluorescence signal acquisition device is used to collect fluorescence information in wide bandgap materials. The fluorescence signal acquisition device can be an imaging system with three-dimensional spatial resolution, such as a confocal laser scanning system, a wide-field imaging system, a wide-field multi-layer imaging system, and a super-resolution imaging system.

[0101] The confocal laser scanning system ensures the fidelity of information readout, while the wide-field imaging system and wide-field multi-layer imaging system enable parallel data readout, increasing readout speed. The super-resolution imaging system can obtain higher-resolution fluorescence distribution, expanding the encoding space of a single information storage unit and achieving higher-density information storage.

[0102] According to an embodiment of the present disclosure, the fluorescence signal acquisition device also has a spatial filtering capability for collecting fluorescence signals near the laser focus and filtering out other fluorescence signals farther away from the laser focus. For example, the fluorescence signal acquisition device can be equipped with a spatial filtering device to achieve spatial filtering capabilities.

[0103] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0104] According to an embodiment of the present disclosure, a processing device and a reading device for storing information using fluorescent defects in wide bandgap materials may be integrated together, such as a system for storing and reading information using fluorescent defects in wide bandgap materials.

[0105] According to an embodiment of the present disclosure, for a system utilizing fluorescent defects in wide bandgap materials for information storage and reading, an embodiment of performing wavefront correction includes:

[0106] In a processing device for storing information from fluorescence defects in wide-bandgap materials, the laser is a femtosecond laser, configured to emit femtosecond laser light. The laser control device includes a wavefront compensation device, configured to compensate the wavefront of the femtosecond laser after adjusting parameters, so that the focus of the femtosecond laser falls on an adjusted position in the wide-bandgap material. The adjusted position may be a preset position in the wide-bandgap material for wavefront correction.

[0107] The reading device that uses the fluorescence defects in the wide bandgap material to store information is used to excite and collect the fluorescence signal of the fluorescence defect at the adjusted position. The fluorescence signal collection device in the reading device is equipped with a spatial filtering device.

[0108] In the embodiments disclosed herein, a femtosecond laser can excite a broad-spectrum fluorescence signal in a wide-bandgap semiconductor at low power. The distribution of the fluorescence signal depends on the distribution of the femtosecond laser focus. When the femtosecond laser diffuses, some of the fluorescence signal is not near the laser focus, and this portion of the fluorescence signal cannot pass through the spatial filtering device in the fluorescence signal acquisition device. Therefore, the spatial filtering device can automatically and quickly optimize the focus of the femtosecond laser, so our wavefront correction process is automatic and rapid. Since the power required for femtosecond excitation of a broad-spectrum fluorescence signal is low and does not damage the wide-bandgap material, the wavefront correction process is also non-destructive.

[0109] FIG2 schematically shows a system diagram for storing and reading information using fluorescent defects in wide bandgap materials according to an embodiment of the present disclosure.

[0110] As shown in Figure 2, a system for storing and reading information using fluorescent defects in wide bandgap materials in this embodiment includes: information 210, an encoding and decoding module 220, a fluorescent signal acquisition device 230, a laser 240, a laser control device 250, a fluorescent signal excitation source 260 and a wide bandgap material 270.

[0111] According to an embodiment of the present disclosure, the information 210 may be target information to be stored, such as text information, symbol information, etc. The encoding and decoding module 220 is used to encode the target information and determine a processing parameter group for storing the target information; and convert the collected fluorescence signal into a target signal. In the information storage stage, the laser 240 is used to emit laser light, for example, it may be a femtosecond laser. The laser control device 250 is used to adjust the light pulse energy, light pulse length, light pulse number, interval between light pulses, light pulse intensity distribution and light pulse polarization of the laser light emitted by the laser 240, so as to store the information 210 in the wide bandgap material.

[0112] During the information collection phase, a fluorescence signal excitation source 260 excites the fluorescent defects in the processed wide-bandgap material to an excited state, causing the fluorescent defects to emit a fluorescent signal. A fluorescence signal collection device 230 collects the fluorescence signal from the wide-bandgap material. The collected fluorescence signal is then decoded by a coding / decoding module 220 to produce information 210.

[0113] According to an embodiment of the present disclosure, the encoding and decoding module 220 can be a computer, a field programmable gate array (FPGA), a programmable logic array (PLA), a system on a chip, a system on a substrate, a system on a package, an application-specific integrated circuit (AIC), hardware or firmware obtained by any other reasonable means of integrating or packaging circuits, or at least one of the three implementation methods of software, hardware, and firmware.

[0114] FIG3 schematically shows a device for storing and reading information using fluorescent defects in a wide bandgap material according to a specific embodiment of the present disclosure.

[0115] As shown in FIG3 , a schematic diagram of a device for storing and reading information using fluorescent defects in wide bandgap materials according to a specific embodiment of the present disclosure includes: a laser control device 310 , a laser 320 , a fluorescent signal acquisition device 330 , a 532 nm laser 340 , and diamond 350 .

[0116] According to an embodiment of the present disclosure, the laser control device 310 is integrated inside the laser 320. The laser control device 310 controls the laser 320 through control parameters transmitted by a computer, and finally outputs light pulses.

[0117] For example, a femtosecond laser includes a laser 320 as a light source and a laser control device 310 .

[0118] According to an embodiment of the present disclosure, a wavefront compensation device may be provided in the laser control device 310 to offset the wavefront distortion caused by different working media. Depending on actual needs, a single or combined optical device can be used for wavefront compensation.

[0119] According to an embodiment of the present disclosure, the laser control device 310 includes a reflector, two lenses located on both sides of the reflector, a mode converter, a half-wave plate 1, a half-wave plate 2, a polarization beam splitter, a quarter-wave plate, a deformable mirror, and a pulse picker.

[0120] The pulse picker acts as an optical switch, converting continuous laser light into light pulses using control information sent by a computer. For example, the pulse picker can emit a single light pulse at the memory address to be processed under a single control.

[0121] As another embodiment of the present disclosure, in the non-processing stage, the pulse picker cannot allow light to pass through; in the processing stage, after the focus of the laser moves to the storage address to be processed, the laser is controlled to pass through the pulse picker through control information.

[0122] The half-wave plate 2 located after the pulse picker is used to adjust the polarization direction of light.

[0123] The polarization beam splitter receives the light pulse emitted from the half-wave plate 2 and reflects the light in the S-polarization direction or the P-polarization direction of the light pulse to the quarter-wave plate. The polarization beam splitter and the half-wave plate 2 are combined to adjust the intensity of the light pulse.

[0124] The quarter-wave plate transmits the light pulse received from the polarization beam splitter to the deformable mirror, and transmits the light pulse returned from the deformable mirror to the polarization beam splitter again. At this time, the polarization beam splitter transmits the light pulse transmitted by the quarter-wave plate to the half-wave plate 1.

[0125] The deformable mirror acts as a wavefront compensation device, which prevents the laser focus from being dispersed inside the diamond by pre-compensating for the distortion of the wavefront, thereby improving the processing accuracy.

[0126] The half-wave plate 1 is also used to adjust the polarization of the light pulse and transmit the adjusted light pulse to the mode converter, so as to generate multiple focal spots to achieve parallel writing.

[0127] As another embodiment of the present disclosure, a spatial light modulator may be used to replace the half-wave plate 1 to achieve more complex polarization adjustment.

[0128] The lens, located between the mode converter and the reflector, converges the light pulses output from the mode converter and transmits them to the reflector. The reflector redirects the light pulses along the optical path. The lens located after the reflector converges the light pulses output from the reflector again.

[0129] According to an embodiment of the present disclosure, two lenses located before and after the reflecting mirror constitute a 4f optical system, which can accurately transmit the wavefront pre-compensated by the deformable mirror to the back focal plane of the objective lens, thereby improving the processing accuracy.

[0130] In an embodiment of the present disclosure, the fluorescence signal acquisition device 330 may include a spectrometer and a fluorescence detector. The spectrometer is used to detect the wavelength spatial distribution of the fluorescence signal, and the fluorescence detector is used to detect the intensity spatial distribution of the fluorescence signal.

[0131] According to an embodiment of the present disclosure, the fluorescence signal collection device 330 may further include a polarization microscope system for detecting the polarization spatial distribution of the fluorescence signal.

[0132] In an embodiment of the present disclosure, a 532 nm laser 340 is used to excite fluorescent defects in the processed diamond, so that the fluorescent defects generate fluorescent signals.

[0133] According to an embodiment of the present disclosure, diamond 350 is used as a wide bandgap material for storing target information. Diamond 350 can be placed on a scanning stage so that the diamond 350 can be processed by an objective lens of the scanning stage.

[0134] According to an embodiment of the present disclosure, the light pulses output by the laser control device 310 can be transmitted to the objective lens of the scanning stage through the dichroic mirror to achieve processing of the diamond 350.

[0135] According to the embodiments of the present disclosure, during the information storage process, the scanning stage can be controlled to achieve focus movement. For example, the focus is moved to the zero point within the diamond. The half-wave plate 1 in the laser control device 310 is rotated so that the laser 320 emits a laser energy of 10nJ. A trigger signal is then sent to the pulse picker in the laser control device 310, which then injects a pulse into the diamond. Similar operations are then performed to store information at other points.

[0136] FIG4 schematically shows a fluorescence signal diagram according to a specific embodiment of the present disclosure.

[0137] FIG4 includes parts of FIG4(a) and FIG4(b), wherein FIG4(a) is a fluorescence signal scanning result of a memory cell array formed by a group of memory cells, and FIG4(b) is an enlarged view of a memory cell intercepted from FIG4(a).

[0138] As a specific embodiment of the present disclosure, the scanning result of FIG4( a) can be obtained by measuring with a ground state depletion super-resolution optical fluorescence microscope. The ground state depletion super-resolution optical fluorescence microscope can collect fluorescence signals near the focus position of the femtosecond laser.

[0139] The central area of ​​FIG4( b ) corresponds to the storage morphology of a single storage unit, and the polarized light used for writing is oriented in the vertical direction.

[0140] According to an embodiment of the present disclosure, since the storage unit can also be set to have a specific spatial orientation, the orientation angle of the storage unit can also be used as a new encoding dimension to achieve information encoding.

[0141] According to an embodiment of the present disclosure, the program code of the computer program for executing the encoding and decoding module provided by the embodiment of the present disclosure can be written in any combination of one or more programming languages. Specifically, these computer programs can be implemented using high-level procedural and / or object-oriented programming languages, and / or assembly / machine languages. Programming languages ​​include, but are not limited to, languages ​​such as Java, C++, Python, "C" or similar programming languages. The program code can be executed entirely on the user computing device, partially on the user device, partially on a remote computing device, or entirely on a remote computing device or server. In the case of a remote computing device, the remote computing device can be connected to the user computing device through any type of network, including a local area network (LAN) or a wide area network (WAN), or can be connected to an external computing device (for example, using an Internet service provider to connect via the Internet).

[0142] The flowcharts in the accompanying drawings illustrate the possible implementation architecture, functions and operations of the systems, methods and computer program products according to various embodiments of the present disclosure. In this regard, each box in the flowchart or block diagram can represent a module, program segment, or a part of code, and the above-mentioned module, program segment, or a part of code contains one or more executable instructions for implementing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in an order different from that marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram or flowchart, and the combination of boxes in the block diagram or flowchart, can be implemented with a dedicated hardware-based system that performs the specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.

[0143] Those skilled in the art will appreciate that the features described in the various embodiments and / or claims of this disclosure may be combined and / or coupled in various ways, even if such combinations and / or couplings are not explicitly described in this disclosure. In particular, the features described in the various embodiments and / or claims of this disclosure may be combined and / or coupled in various ways without departing from the spirit and teachings of this disclosure. All such combinations and / or couplings are intended to fall within the scope of this disclosure.

[0144] The specific embodiments described above further illustrate the purpose, technical solutions and beneficial effects of the present disclosure. It should be understood that the above are only specific embodiments of the present disclosure and are not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure should be included in the scope of protection of the present disclosure.

Claims

1. A method for storing information using fluorescent defects in wide bandgap materials, comprising: Determining a processing parameter group, wherein the processing parameter group is used to store target information in the wide bandgap material, and the processing parameter group includes at least one processing parameter; Based on the processing parameter group, processing is performed at M storage addresses of the wide bandgap material, so that fluorescent defects matching the target information are generated at the M storage addresses, where M is a positive integer.

2. The method according to claim 1, further comprising: Determining the number of storage units used to store the target information according to the number of encoding bits of the target information; as well as The storage addresses of M storage units are determined from the unprocessed storage units in the wide bandgap material to obtain the M storage addresses.

3. The method according to claim 1 or 2, wherein: Determining the processing parameter group includes: According to a preset coding length, the target information is split into M target sub-information; Based on a preset mapping relationship, determine Q processing parameters corresponding to each of the target sub-information to obtain the processing parameter group, where Q is a positive integer greater than or equal to 1; The Q processing parameters are used together to process one of the storage addresses in the wide bandgap material, and each of the storage addresses is used to store one of the target sub-information.

4. The method according to claim 1, wherein: The processing parameters include at least one of the following: energy, length, number, intensity, polarization of light pulses and intervals between light pulses.

5. The method according to claim 1, wherein: The types of the fluorescent defects include: single vacancy fluorescent defects, double vacancy fluorescent defects, doped atomic fluorescent defects, or composite fluorescent defects consisting of doped atomic fluorescent defects and vacancy doped atoms; The wide bandgap material includes at least one of the following: diamond, silicon carbide, gallium nitride, aluminum nitride, zinc oxide and lithium niobate.

6. The method according to claim 1, wherein: Before performing processing at the M storage addresses of the wide bandgap material based on the processing parameter group, the method further includes: The wavefront of the laser used for processing the wide bandgap material is modified so that the focus of the laser is located at the M storage addresses.

7. A method for reading information using fluorescent defects in a wide bandgap material, comprising: Collecting fluorescence information at M storage addresses in a wide bandgap material, wherein the fluorescence information is used to characterize the distribution of fluorescence defects at each of the storage addresses, the fluorescence defects match the target information, and the fluorescence defects are generated after processing at the M storage addresses of the wide bandgap material based on a processing parameter group, where M is a positive integer; and The fluorescence information is decoded to obtain the target information.

8. The method according to claim 7, wherein: The fluorescence information includes the intensity spatial distribution, wavelength spatial distribution and polarization spatial distribution of the fluorescence signal.

9. A processing device for storing information using fluorescent defects in wide bandgap materials, comprising: Lasers for generating laser light for processing wide bandgap materials; A laser control device is used to control the processing parameters of the laser according to a processing parameter group, and use the laser after the processing parameters are adjusted to process at M storage addresses of the wide bandgap material, so that fluorescent defects matching the target information are generated at the M storage addresses, the processing parameter group is used to store the target information in the wide bandgap material, the processing parameter group includes at least one processing parameter, and M is a positive integer.

10. A reading device for storing information using fluorescent defects in a wide bandgap material, comprising: A fluorescent signal excitation source, used to excite fluorescent defects at M storage addresses in a wide bandgap material, so that the fluorescent defects at the M storage addresses generate fluorescent information, the fluorescent information is used to characterize the distribution of the fluorescent defects, the fluorescent defects match the target information, and the fluorescent defects are generated after processing at the M storage addresses based on a processing parameter group; The fluorescence signal acquisition device is used to acquire the fluorescence information so as to decode the fluorescence information and obtain the target information.

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