Method for improving uniformity of magnetron sputtering deposited film and prolonging service life of target material

Abstract

A method for improving the uniformity of a magnetron sputtering deposited film and the service life of a target material, wherein the method mainly comprises a target cathode magnet rotation method and a substrate rotation method. During sputtering, the two rotation methods are combined, and the rotation speeds can be controlled separately, thereby greatly improving the uniformity of the magnetron sputtering deposited film, greatly increasing the utilization rate of the target material while improving the quality of the film, and reducing costs.

Description

A method for improving the uniformity of magnetron sputtering deposited thin films and target life Technical Field

[0001] The present invention relates to the technical field of thin film production, and in particular to a method for improving the uniformity of magnetron sputtering deposited thin films and the life of target materials. Background Art

[0002] Thin films have a different structure than bulk materials. Even when made of the same material, thin films can exhibit many distinct properties. Because thin film thicknesses are less than one micron, and even thinner at a few to tens of nanometers, they exhibit size effects, with some of their inherent properties being correlated with their thickness. This is why thin film materials possess many unique properties. Because of their significant advantages in miniaturization and integration, they have a wide range of applications in fields such as electromagnetism, acoustics, and mechanics. Modern sensors are particularly dependent on thin film devices. Furthermore, with the current trend toward integrated, intelligent technology, thin film devices are rapidly developing and playing a vital role in various fields. Thin film devices can also be prepared using a variety of methods, including physical vapor deposition and chemical vapor deposition, to meet specific requirements.

[0003] Magnetron sputtering technology is a method of physical vapor deposition. Compared with vacuum evaporation, it has the advantages of fast deposition rate, high quality of deposited films, good uniformity, and wide application.

[0004] Currently, an increasing number of devices require multi-layer thin film composite structures. To ensure the flatness of the lower film layer and prevent it from affecting the flatness of other layers, the roughness of the lower film layer must be minimized to avoid damaging the upper film device structure and degrading its performance and reliability. In addition, since magnetron sputtering generally forms a "racetrack", the target material in the "racetrack" area is highly wasted, with low utilization and prone to breakdown. Technical Solutions

[0005] The present invention aims to address existing problems by providing a method for improving the uniformity of magnetron sputtering film deposition and the life of the target, thereby improving film quality, increasing the target's usable life, and reducing costs. The invention also allows the substrate and magnetic field to rotate at a controllable rate that can be set as needed.

[0006] In order to achieve the above technical objectives, the technical solutions of the present invention are as follows:

[0007] A method for improving the uniformity of magnetron sputtering deposited films and the life of target materials includes increasing substrate rotation and target cathode magnet rotation during the film sputtering process.

[0008] Preferably, the speeds of the substrate rotation and the target cathode magnet rotation are controllable separately without interfering with each other.

[0009] Preferably, target rotation and substrate rotation are turned on after sputtering begins.

[0010] A method for improving the uniformity of magnetron sputtering deposited thin films and the life of target materials comprises the following steps:

[0011] Step 1: Cavity scrubbing: Use anhydrous ethanol and a dust-free cloth to scrub the cavity of the magnetron sputtering equipment to reduce impurities, prevent the vacuum from sucking impurity particles into the precision mechanical structure behind and causing damage, and prevent impurities from contaminating the film;

[0012] Step 2: Loading the substrate: Scrub the metal plate specially used for placing the substrate, then place the substrate on it, use a metal fork to transport the metal plate loaded with the substrate into the magnetron sputtering chamber, adjust the target-substrate distance, and close the chamber door;

[0013] Step 3: Vacuuming: First use a mechanical pump to increase the air pressure, and then use a combination of a mechanical pump and a molecular pump to vacuum;

[0014] Step 4: Introduce gas: After reaching the required vacuum degree, introduce the working gas argon first. If other reaction gases are required, they can be introduced after the argon purge;

[0015] Step 5: Start sputtering: Turn on the sputtering power supply, adjust the sputtering voltage and sputtering current. If it is RF magnetron sputtering, you also need to adjust the reflected power and self-bias voltage, and observe whether there is a glow. If there is, it means sputtering has started;

[0016] Step 6: Start substrate rotation: Set the substrate rotation rate and start rotating the metal disk with the substrate;

[0017] Step 7: Start rotating the target cathode magnet: Set the target cathode magnet rotation rate, start rotating the magnetic field, and observe the glow rotation.

[0018] Preferably, in step 1, the cavity needs to be cleaned with anhydrous ethanol and a dust-free cloth to clean easily falling residues as much as possible to avoid contamination of the film surface and components.

[0019] Preferably, in step 2, the metal disk and substrate must not be touched directly by hand, and the substrate needs to be cleaned with anhydrous ethanol and deionized water.

[0020] Preferably, in step 3, the air pressure must be pumped down to about 1 Pa using a mechanical pump before the molecular pump is turned on to avoid damaging the molecular pump.

[0021] Preferably, in step 4, first turn on the argon switch, adjust the argon flow rate, flush the cavity first, and then turn on the corresponding gas if other reaction gases are needed.

[0022] Preferably, the time for flushing the cavity is 10 minutes.

[0023] Preferably, in step 6, the substrate rotation speed is set, the substrate rotation is turned on, and the substrate is allowed to rotate with the metal disk.

[0024] Preferably, in step 7, the rotation speed of the target cathode magnet is set, and the rotation of the target cathode magnet is turned on to rotate the glow so that a larger area of ​​the target material is evenly sputtered. Beneficial effects

[0025] The beneficial effects of the present invention are:

[0026] 1. It can greatly improve the uniformity of magnetron sputtering deposited films, reduce roughness, improve film quality, and improve the structural performance of thin film devices.

[0027] 2. It can improve the utilization rate and service life of the target material and reduce costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] FIG1 is a flow chart of a method for improving uniformity of thin film deposition and target life by magnetron sputtering according to the present invention;

[0029] FIG2 is a schematic diagram showing improvement in target utilization according to the present invention;

[0030] FIG3 is a schematic diagram of substrate rotation according to the present invention. Modes for Carrying Out the Invention

[0031] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0032] The present invention will be further described below with reference to Figures 1-3:

[0033] A method for improving the uniformity of magnetron sputtering deposited thin films and the life of target materials comprises the following steps:

[0034] Step 1: Cavity scrubbing: Use anhydrous ethanol and a dust-free cloth to scrub the cavity of the magnetron sputtering equipment to reduce impurities, prevent the vacuum from sucking impurity particles into the precision mechanical structure behind and causing damage, and prevent impurities from contaminating the film;

[0035] Step 2: Loading the substrate: Scrub the metal plate specially used for placing the substrate, then place the substrate on it, use a metal fork to transport the metal plate loaded with the substrate into the magnetron sputtering chamber, adjust the target-substrate distance, and close the chamber door;

[0036] Step 3: Vacuuming: First use a mechanical pump to pump the air pressure to about 1Pa, and then use a combination of a mechanical pump and a molecular pump to vacuum;

[0037] Step 4: Introduce gas: After reaching the required vacuum degree, introduce the working gas argon first. If other reaction gases are required, other gases can be introduced after the argon gas is purged for 10 minutes;

[0038] Step 5: Start sputtering: Turn on the sputtering power supply, adjust the sputtering voltage and sputtering current. If it is RF magnetron sputtering, you also need to adjust the reflected power and self-bias voltage, and observe whether there is a glow. If there is, it means sputtering has started;

[0039] Step 6: Start substrate rotation: Set the substrate rotation rate and start rotating the metal disk with the substrate;

[0040] Step 7: Start rotating the target cathode magnet: Set the target cathode magnet rotation rate, start rotating the magnetic field, and observe the glow rotation.

[0041] Specifically, in step 1, the cavity needs to be cleaned with anhydrous ethanol and a dust-free cloth, and the easily fallen residues should be cleaned as much as possible to avoid contamination of the film surface and components.

[0042] Specifically, in step 2, the metal disk and substrate must not be touched directly by hand, and the substrate needs to be cleaned with anhydrous ethanol and deionized water.

[0043] Specifically, in step 3, the air pressure must be pumped down to about 1 Pa using a mechanical pump before the molecular pump is turned on to avoid damaging the molecular pump.

[0044] Specifically, in step 4, first turn on the argon switch, adjust the argon flow rate, flush the cavity for 10 minutes, and then turn on the corresponding gas if other reaction gases are needed.

[0045] Specifically, in step 6, the substrate rotation speed is set, the substrate rotation is turned on, and the substrate is allowed to rotate with the metal disk.

[0046] Specifically, in step 7, the rotation speed of the target cathode magnet is set, and the rotation of the target cathode magnet is turned on to rotate the glow so that a larger area of ​​the target material is evenly sputtered.

[0047] The present invention provides a method for improving the uniformity and target life of magnetron sputtering thin films. The method includes increasing substrate rotation and target cathode magnet rotation during the sputtering process. The speeds of the substrate and target cathode magnet rotation are independently controllable and do not interfere with each other. After sputtering begins, target rotation and substrate rotation are activated. This method significantly improves the uniformity of magnetron sputtering thin films, reduces roughness, enhances film quality, and improves the structural performance of thin-film devices. It also increases target utilization and lifespan, reducing costs.

[0048] The above description is only used to understand the method and core idea of ​​the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made to the present invention without departing from the principles of the present invention. These improvements and modifications also fall within the scope of protection of the rights of the present invention.

Claims

1. A method for improving the uniformity of magnetron sputtering deposited thin films and the life of target materials, characterized in that: During the sputtering process of the thin film, substrate rotation and target cathode magnet rotation are added.

2. The method for improving uniformity of thin film deposition and target life of magnetron sputtering according to claim 1, characterized in that: The rotation speeds of the substrate and the target cathode magnet are controllable respectively without interfering with each other.

3. The method for improving uniformity of thin film deposition and target life of magnetron sputtering according to claim 1, characterized in that: After the sputtering starts, the target rotation and the substrate rotation are turned on.

4. A method for improving uniformity of thin film deposition and target life by magnetron sputtering according to any one of claims 1 to 3, characterized in that: The following steps are involved: Step 1: Cavity scrubbing: Use anhydrous ethanol and dust-free cloth to scrub the cavity of the magnetron sputtering equipment to reduce impurities, avoid the vacuum from sucking impurity particles into the precision mechanical structure behind to cause damage, and avoid impurities from contaminating the film; Step 2: Loading the substrate: Scrub the metal plate specially used for placing the substrate, then place the substrate on it, use a metal fork to transport the metal plate loaded with the substrate into the magnetron sputtering chamber, adjust the target-substrate distance, and close the chamber door; Step 3: Vacuuming: First use a mechanical pump to increase the air pressure, and then use a combination of a mechanical pump and a molecular pump to vacuum; Step 4: Introduce gas: After reaching the required vacuum degree, introduce the working gas argon first. If other reaction gases are required, other gases can be introduced after the argon gas is introduced for cleaning; Step 5: Start sputtering: Turn on the sputtering power supply, adjust the sputtering voltage and sputtering current. If it is RF magnetron sputtering, you also need to adjust the reflected power and self-bias voltage, and observe whether there is a glow. If there is, it means that sputtering has started; Step 6: Start substrate rotation: set the substrate rotation rate and start rotating the metal plate with the substrate; Step 7: Start rotating the target cathode magnet: Set the rotation rate of the target cathode magnet, start rotating the magnetic field, and observe the glow rotation.

5. The method for improving uniformity of thin film deposition and target life of magnetron sputtering according to claim 4, characterized in that: In step 2, do not touch the metal plate and substrate directly with your hands. The substrate needs to be cleaned with anhydrous ethanol and deionized water.

6. The method for improving uniformity of thin film deposition and target life of magnetron sputtering according to claim 4, characterized in that: In step 3, first use a mechanical pump to pump the air pressure to 1 Pa and then turn on the molecular pump to avoid damaging the molecular pump.

7. The method for improving uniformity of thin film deposition and target life of magnetron sputtering according to claim 4, characterized in that: In step 4, first turn on the argon switch, adjust the argon flow rate, flush the chamber first, and then turn on the corresponding gas if other reaction gases are needed.

8. The method for improving uniformity of thin film deposition and target life of magnetron sputtering according to claim 7, characterized in that: The cavity flushing time is 10 minutes.

9. The method for improving uniformity of thin film deposition and target life of magnetron sputtering according to claim 4, characterized in that: In step 6, set the substrate rotation speed, turn on the substrate rotation, and let the substrate rotate with the metal disk.

10. The method for improving uniformity of thin film deposition and target life of magnetron sputtering according to claim 4, characterized in that: In step 7, the rotation speed of the target cathode magnet is set, and the rotation of the target cathode magnet is turned on to rotate the glow so that a larger area of ​​the target material can be evenly sputtered.

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