Power generation system, power generation unit, and method for manufacturing power generation unit

Abstract

A power generation system (1) comprises: an emitter (4) that is heated by heat supplied from a heat source (2) and emits infrared rays (R1); and a power generation unit (5) that is disposed at a distance from the emitter (4) and generates power by converting the infrared rays (R1) emitted from the emitter (4) into electric energy. The power generation unit (5) comprises: a power generator (6) including a photoelectric conversion element (61) that converts the infrared rays (R1) radiated from the emitter (4) into electric energy; and a reflection unit (7) that is provided opposite to the emitter (4) with respect to the power generator (6) and reflects at least a portion of the infrared rays (R1) that have passed through the power generator (6) toward the emitter (4).

Description

Power generation system, power generation unit, and method for manufacturing power generation unit

[0001] This disclosure relates to a power generation system, a power generation unit, and a method for manufacturing a power generation unit. This application claims priority to Japanese Patent Application No. 2023-166210, filed on September 27, 2023, the contents of which are incorporated herein by reference.

[0002] Patent Document 1 discloses a configuration for generating power by thermophotovoltaic (TPV) power generation, in which an emitter (radiator) is heated and infrared rays emitted from the emitter are converted into electrical energy by a photoelectric conversion cell.

[0003] Japanese Patent Application Laid-Open No. 2001-196622

[0004] However, in the configuration described in Patent Document 1, the photoelectric conversion cell that can convert light in the infrared wavelength range emitted from the emitter into electrical energy with high efficiency is made of special materials compared to solar panels, and is therefore expensive. On the other hand, when trying to apply inexpensive commercially available solar panels to TPV power generation, the wavelength range of the infrared light emitted from the emitter does not match the wavelength range in which solar panels that use visible light can efficiently generate power, making it impossible to generate power efficiently.

[0005] The present disclosure provides a power generation system, a power generation unit, and a method for manufacturing a power generation unit that can efficiently generate power while reducing costs.

[0006] The power generation system according to the present disclosure comprises an emitter that is heated by heat supplied from a heat source and emits infrared rays, and a power generation unit that is arranged at a distance from the emitter and generates electricity by converting the infrared rays emitted from the emitter into electrical energy, wherein the power generation unit comprises a power generation section that includes a photoelectric conversion element that converts the infrared rays radiated from the emitter into electrical energy, and a reflecting section that is provided on the opposite side of the power generation section from the emitter side and reflects at least a portion of the infrared rays that pass through the power generation section toward the emitter side.

[0007] The power generation unit according to the present disclosure is a power generation unit used in the power generation system described above, and comprises a power generation section including a photoelectric conversion element that converts infrared rays emitted from the emitter into electrical energy, and a reflecting section that is provided on the opposite side of the power generation section from the emitter side and that reflects at least a portion of the infrared rays that have passed through the power generation section toward the emitter side.

[0008] The method for manufacturing a power generation unit according to the present disclosure is a method for manufacturing a power generation unit as described above, and includes the steps of preparing the power generation section and the reflector, and stacking the power generation section and the reflector.

[0009] According to the power generation system, power generation unit, and method for manufacturing a power generation unit of the present disclosure, it is possible to generate power efficiently while suppressing costs.

[0010] It is a figure which shows the schematic configuration of the power generation system based on an embodiment of the present disclosure. It is a flowchart which shows the procedure of the manufacturing method of the power generation unit based on an embodiment of the present disclosure. It is a figure which shows a modified example of the power generation system. It is a figure which shows another modified example of the power generation system.

[0011] Hereinafter, embodiments of a power generation system, a power generation unit, and a method for manufacturing a power generation unit according to the present disclosure will be described with reference to the accompanying drawings. However, the present disclosure is not limited to this embodiment. (Configuration of the Power Generation System) As shown in FIG. 1 , the power generation system 1 includes a heat source 2 and a system main body 3. The heat source 2 may be provided exclusively for heating an emitter 4 (described later). The heat source 2 may be used for other purposes, and the emitter 4 may be heated by exhaust heat emitted from the heat source 2. Examples of such a heat source 2 include a gas turbine and a solar light collector. The method of heating the emitter 4 by the heat source 2 is not particularly limited. Examples of the method of heating the emitter 4 by the heat source 2 include utilizing exhaust heat from a gas turbine and irradiating concentrated sunlight.

[0012] (Configuration of System Main Body) The system main body 3 includes an emitter 4 and a power generation unit 5. In this embodiment, the system main body 3 is housed in, for example, a vacuum chamber (not shown). Note that the system main body 3 may not be housed in a vacuum chamber and may be placed in the atmosphere.

[0013] (Configuration of Emitter) The emitter 4 is heated by heat supplied from the heat source 2. When heated, the emitter 4 radiates infrared rays R1. Here, the higher the temperature of the emitter 4, the greater the amount of energy of the infrared rays R1 radiated from the emitter 4. It is preferable that the emitter 4 be heated to, for example, 1000°C or higher.

[0014] The emitter 4 preferably has a melting point equal to or higher than the temperature to which it is heated by the heat source 2. Examples of materials that can be used to form the emitter 4 include ceramics, bricks, and metals having melting points equal to or higher than the heating temperature. The emitter 4 may have any shape or size. The emitter 4 may be, for example, in the form of a panel, a block, a cylinder, or the like.

[0015] The emitter 4 preferably has an emitter-side facing surface 5f facing the power generation unit 6, which will be described later. The emitter 4 preferably has a black surface to increase the radiation efficiency of the infrared rays R1. In particular, it is preferable that a coating film made of black paint is formed on the surface of the emitter 4. In this case, the entire surface of the emitter 4 may be covered with the coating film made of black paint, or at least the emitter-side facing surface 5f may be covered with the coating film made of black paint.

[0016] (Configuration of power generation unit) The power generation unit 5 includes a power generation section 6, a reflecting section 7, and a cooling section 8. In this embodiment, the power generation section 6, the reflecting section 7, and the cooling section 8 are each formed in a plate shape with a predetermined thickness. In this embodiment, the power generation section 6, the reflecting section 7, and the cooling section 8 are stacked in this order.

[0017] The power generating unit 6 is disposed at a distance from the emitter 4 .

[0018] The power generating unit 6 includes a photoelectric conversion element 61 that generates power by converting infrared rays R1 emitted from the emitter 4 into electrical energy, and a collecting electrode 62. The photoelectric conversion element 61 has a surface 61f facing the emitter 4. The power generating unit 6 generates electrical energy due to the photovoltaic effect of infrared rays R1 that enter the interior from the surface 61f. The collecting electrode 62 is provided to extract power from a transparent electrode (not shown) provided on the surface 61f of the photoelectric conversion element 61 to the outside.

[0019] It is preferable to use a semiconductor substrate made of silicon material such as single crystal silicon or amorphous silicon, glass material, sapphire, etc. as the photoelectric conversion element 61. Among these, a semiconductor substrate made of silicon material used in solar panels, so-called silicon substrate, is used because it is low cost.

[0020] The surface 61f of the photoelectric conversion element 61 preferably does not include an anti-reflection coating such as is provided on a solar panel. In other words, it is preferable that only the atmosphere A of the space in which the power generation system 1 is installed be interposed between the surface 61f of the photoelectric conversion element 61 and the emitter 4. The atmosphere A interposed between the surface 61f of the photoelectric conversion element 61 and the emitter 4 may be air or a gas such as nitrogen. Furthermore, if the power generation system 1 is housed in a vacuum chamber, the atmosphere A interposed between the surface 61f of the photoelectric conversion element 61 and the emitter 4 may be an atmosphere A with a predetermined vacuum level or higher in the vacuum chamber. Even if a collecting electrode 62 is provided on a portion of the surface 61f, only the atmosphere A of the space is interposed between the surface 61f and the emitter 4 except for the portion where the collecting electrode 62 is provided. Therefore, it can be said that substantially only the atmosphere A of the space is interposed between the surface 61f and the emitter 4. Furthermore, it is preferable that the surface 61f of the photoelectric conversion element 61 does not have a surface treatment such as a roughened surface for anti-reflection, which is provided on a solar panel. The surface 61f of the photoelectric conversion element 61 of this embodiment is preferably a smooth surface.

[0021] The reflector 7 is provided on the opposite side of the power generating unit 6 from the emitter 4 side. The reflector 7 is provided so as to cover the back surface 6g of the power generating unit 6. The reflector 7 is formed in the shape of a film extending along the back surface 6g. The reflector 7 may be in the shape of a plate provided so as to extend along the back surface 6g. The reflector 7 reflects at least a portion of the infrared rays R1 that have passed through the power generating unit 6 toward the emitter 4. The reflector 7 is formed of a reflective material that can reflect infrared rays. Examples of such reflective materials include gold, silver, and aluminum. The reflector 7 is joined to the power generating unit 6 by vapor deposition using sputtering, adhesive bonding, or the like.

[0022] The cooling unit 8 is provided on the opposite side of the reflecting unit 7 from the power generating unit 6. The cooling unit 8 is provided so as to cover at least a portion of the reflecting unit 7. It is preferable that the cooling unit 8 is provided so as to cover the entire reflecting unit 7. The cooling unit 8 cools the power generating unit 6 and the reflecting unit 7, the temperatures of which increase due to infrared rays. The cooling unit 8 may be a heat sink made of, for example, an aluminum alloy, which absorbs heat from the reflecting unit 7 and dissipates it to the surroundings. The cooling unit 8 may also be a heat exchanger that exchanges heat with the reflecting unit 7 by exchanging heat with a refrigerant introduced from the outside, for example.

[0023] In this power generation system 1, when the emitter 4 is heated by heat supplied from the heat source 2, infrared rays R1 are emitted from the emitter 4. The infrared rays R1 emitted from the emitter 4 are incident on the power generation section 6 of the power generation unit 5, which is disposed at a distance from the emitter 4, and are converted into electrical energy by the photoelectric conversion element 61, generating electric power. When the photoelectric conversion element 61 uses a silicon substrate similar to that used in solar panels, the power generation system 1 is preferably configured so that the power generation section 6 generates electric power in a temperature range of 50°C to 150°C. The temperature range in which the power generation section 6 generates electric power is more preferably 70°C to 130°C. The temperature range in which the power generation section 6 generates electric power is particularly preferably 90°C to 110°C. In this way, photoelectric conversion efficiency, particularly due to the photovoltaic effect, can be improved. A portion of the infrared rays R1 emitted from the emitter 4 passes through the power generation section 6. At least a portion of the infrared rays R1 that have passed through the power generation unit 6 is reflected by the reflecting unit 7 toward the emitter 4. When the infrared rays R2 reflected by the reflecting unit 7 toward the emitter 4 are irradiated onto the emitter 4, the emitter 4 is heated. In this way, the emitter 4 is heated by the infrared rays R2 reflected by the reflecting unit 7 toward the emitter 4, in addition to the heat supplied from the heat source 2. This further increases the temperature of the emitter 4, and the amount of energy of the infrared rays R1 radiated from the emitter 4 increases.

[0024] (Procedure for Manufacturing Power Generation Unit) FIG. 2 is a flowchart showing the procedure for manufacturing the power generation unit 5 in this embodiment. As shown in FIG. 2 , the method for manufacturing the power generation unit 5 includes a material preparation step S1 and a material stacking step S2. In the material preparation step S1, the materials constituting the power generation unit 5 are prepared, including the components constituting the power generation section 6, the material or components constituting the reflector, and the components constituting the cooling section 8. Next, in the material stacking step S2, the components constituting the power generation section 6, the material or components constituting the reflector, and the components constituting the cooling section 8 prepared in the material preparation step S1 are stacked and bonded together. Here, the reflector 7 may be formed by vapor deposition on the components constituting the power generation section 6, or the plate-shaped reflector 7 prepared in the material preparation step S1 may be bonded to the power generation section 6. In this manner, the power generation unit 5 is manufactured.

[0025] (Operation and Effect) In the power generation system 1, power generation unit 5, and manufacturing method of the power generation unit 5 configured as described above, infrared rays R1 are emitted from the emitter 4 heated by heat supplied from the heat source 2. The infrared rays R1 emitted from the emitter 4 are converted into electrical energy in the power generation section 6 of the power generation unit 5, which is disposed at a distance from the emitter 4, thereby generating electric power. A portion of the infrared rays R1 emitted from the emitter 4 is transmitted through the power generation section 6. At least a portion of the infrared rays R1 transmitted through the power generation section 6 is reflected toward the emitter 4 by the reflector 7 provided on the opposite side of the power generation section 6 from the emitter 4. As a result, the emitter 4 is also heated by the infrared rays R2 reflected toward the emitter 4 by the reflector 7. In this way, the emitter 4 is heated by the infrared rays R2 reflected toward the emitter 4 by the reflector 7 in addition to the heat supplied from the heat source 2, and the temperature of the emitter 4 is further increased, and the amount of energy of the infrared rays R1 emitted from the emitter 4 is increased. Furthermore, the heat supplied from the heat source 2 can be reduced by the amount that the emitter 4 is heated by the infrared rays R2 reflected by the reflecting portion 7 toward the emitter 4. This increases the effective utilization rate of the infrared rays R1 emitted from the emitter 4, thereby increasing the power generation efficiency of the entire power generation system 1. Furthermore, the increased power generation efficiency leads to substantial cost reductions even when the same photoelectric conversion elements 61 are used. As a result, power generation can be performed efficiently while keeping costs down.

[0026] Furthermore, by using the photoelectric conversion element 61 made of silicon material, it is possible to use, for example, the material of a solar panel for photovoltaic power generation as the power generation unit 6. Since solar panels are produced in large quantities and are inexpensive, it is possible to more effectively reduce costs.

[0027] Furthermore, the power generating section 6 and the reflecting section 7 can be cooled by the cooling section 8, and the power generating efficiency of the power generating section 6 can be improved.

[0028] Furthermore, by heating the emitter 4 to a high temperature range such as 1000° C. or higher, the amount of energy of the infrared rays R1 emitted from the emitter 4 can be increased, allowing for even more efficient power generation.

[0029] Furthermore, by generating electricity in the power generation unit 6 in a temperature range of 50°C or higher and 150°C or lower, power generation efficiency can be improved compared to when generating electricity in the so-called normal temperature range, i.e., below 50°C.

[0030] Furthermore, by having only the atmosphere A of the space in which the power generation system 1 is installed interposed between the power generation unit 6 and the emitter 4, the infrared rays R1 emitted from the emitter 4 are directly incident on the power generation unit 6. This increases the amount of energy of the infrared rays R1 incident on the power generation unit 6 compared to when an anti-reflection film is provided on the surface 61f of the power generation unit 6, enabling more efficient power generation.

[0031] Furthermore, by making the surface 61f of the power generating unit 6 a smooth surface, the infrared rays R1 emitted from the emitter 4 are efficiently incident on the power generating unit 6. As a result, the amount of energy of the infrared rays R1 incident on the power generating unit 6 is increased compared to when the surface 61f of the power generating unit 6 is subjected to various surface treatments for the purpose of preventing reflection or the like, and power generation can be performed even more efficiently.

[0032] (Modifications of the embodiment) In the above embodiment, the photoelectric conversion element 61 may include a doped portion made of a highly concentrated n-type semiconductor in order to increase the current collection efficiency of the collecting electrode 62. However, the doped portion blocks infrared rays from entering the power generation unit 6. Therefore, for example, as shown in Fig. 3, the doped portion 81 may be provided only around the collecting electrode 62, thereby minimizing the area where infrared rays are blocked by the doped portion 81. Furthermore, as shown in Fig. 4, when a layer-like (film-like) doped portion 82 is provided along the surface of the photoelectric conversion element 61, it is preferable to make the thickness of the doped portion 82 as thin as possible.

[0033] Furthermore, in the above embodiment, the surface 61f of the photoelectric conversion element 61 is not provided with a surface treatment such as an anti-reflection film or a textured surface for anti-reflection, as is provided on a solar panel, but this is not limited to this. For example, if a commercially available solar panel with an anti-reflection film or a surface treatment for anti-reflection is used as the photoelectric conversion element 61, the power generation unit 5 and power generation system 1 can be configured inexpensively. In this case, although the anti-reflection film or the surface treatment for anti-reflection reduces the efficiency of infrared rays entering the photoelectric conversion element 61, the reflector 7 reflects a portion of the infrared rays back to the emitter 4, thereby improving power generation efficiency.

[0034] Furthermore, when a commercially available solar panel equipped with an anti-reflection film or a surface treatment for anti-reflection is used as the photoelectric conversion element 61, the anti-reflection film or the surface treatment for anti-reflection may be removed.

[0035] In this case, when manufacturing the power generation unit 5 according to the flow shown in Figure 2, when preparing the components that make up the power generation section 6 in the material preparation step S1, surface treatments such as anti-reflective coatings and anti-reflective textured surfaces may be removed from the surface of a commercially available solar panel by appropriate mechanical processing, chemical processing, etc.

[0036] <Additional Notes> The power generation system, the power generation unit, and the method for manufacturing the power generation unit described in the embodiments can be understood, for example, as follows.

[0037] (1) A power generation system 1 according to a first aspect includes an emitter 4 that is heated by heat supplied from a heat source 2 and emits infrared rays R1, and a power generation unit 5 that is arranged at a distance from the emitter 4 and generates power by converting the infrared rays R1 emitted from the emitter 4 into electrical energy. The power generation unit 5 includes a power generation section 6 that includes a photoelectric conversion element that converts the infrared rays R1 emitted from the emitter 4 into electrical energy, and a reflecting section 7 that is provided on the opposite side of the power generation section 6 from the emitter 4 side and reflects at least a portion of the infrared rays R1 that have passed through the power generation section 6 toward the emitter 4.

[0038] In this power generation system 1, infrared rays R1 are emitted from an emitter 4 that is heated by heat supplied from a heat source 2. The infrared rays R1 emitted from the emitter 4 are converted into electrical energy in a power generation section 6 of a power generation unit 5 that is disposed at an interval from the emitter 4, thereby generating power. A portion of the infrared rays R1 emitted from the emitter 4 passes through the power generation section 6. At least a portion of the infrared rays R1 that pass through the power generation section 6 is reflected toward the emitter 4 by a reflector 7 that is provided on the opposite side of the power generation section 6 from the emitter 4. As a result, the emitter 4 is also heated by the infrared rays R2 reflected toward the emitter 4 by the reflector 7. In this way, the emitter 4 is heated not only by the heat supplied from the heat source 2 but also by the infrared rays R2 reflected toward the emitter 4 by the reflector 7, thereby further increasing the temperature of the emitter 4 and increasing the amount of energy of the infrared rays R1 emitted from the emitter 4. Furthermore, the heat supplied from the heat source 2 can be reduced by the amount that the emitter 4 is heated by the infrared rays R2 reflected by the reflecting portion 7 toward the emitter 4. This increases the effective utilization rate of the infrared rays R1 emitted from the emitter 4, thereby increasing the power generation efficiency of the entire power generation system 1. Furthermore, the increased power generation efficiency leads to substantial cost reductions even when the same photoelectric conversion elements 61 are used. As a result, power generation can be performed efficiently while keeping costs down.

[0039] (2) The power generation system 1 according to a second aspect is the power generation system 1 according to (1), in which the photoelectric conversion element 61 is formed using a silicon material.

[0040] This allows the power generation unit 6 including the photoelectric conversion element 61 made of a silicon material to be, for example, a so-called solar panel for photovoltaic power generation. Since solar panels are produced in large quantities and are inexpensive, costs can be reduced more effectively.

[0041] (3) The power generation system 1 according to a third aspect is the power generation system 1 according to (1) or (2), further including a cooling unit 8 that cools the power generation unit 6 and the reflecting unit 7 .

[0042] This allows the power generating section 6 and the reflecting section 7 to be cooled by the cooling section 8, thereby increasing the power generation efficiency in the power generating section 6.

[0043] (4) The power generation system 1 according to a fourth aspect is the power generation system 1 according to any one of (1) to (3), in which the emitter 4 is heated to 1000° C. or higher.

[0044] By heating the emitter 4 to a high temperature range such as 1000° C. or higher, the amount of energy of the infrared rays R1 emitted from the emitter 4 can be increased, and power generation can be performed more efficiently.

[0045] (5) A fifth aspect of the power generation system 1 is any one of the power generation systems 1 of (1) to (4), in which the power generation unit 6 generates electric power in a temperature range of 50°C or higher and 150°C or lower.

[0046] As a result, by generating electricity in the power generation unit 6 in a temperature range of 50°C or higher and 150°C or lower, power generation efficiency can be improved compared to when generating electricity in the so-called normal temperature range, i.e., below 50°C.

[0047] (6) The power generation system 1 according to the sixth aspect is any one of the power generation systems 1 of (1) to (5), in which only the atmosphere A of the space in which the power generation unit 6 and the emitter 4 are arranged is interposed between the power generation unit 6 and the emitter 4.

[0048] As a result, only the spatial atmosphere A is present between the power generating unit 6 and the emitter 4, and the infrared rays R1 emitted from the emitter 4 are directly incident on the power generating unit 6. This increases the amount of energy of the infrared rays R1 incident on the power generating unit 6 compared to when an anti-reflection film is provided on the surface 61f of the power generating unit 6, enabling more efficient power generation.

[0049] (7) The power generation system 1 according to a seventh aspect is any one of the power generation systems 1 according to (1) to (6), in which the surface 61f of the power generation section 6 facing the emitter 4 is a smooth surface.

[0050] As a result, by making the surface 61f of the power generating unit 6 a smooth surface, the infrared rays R1 emitted from the emitter 4 are efficiently incident on the power generating unit 6. As a result, the amount of energy of the infrared rays R1 incident on the power generating unit 6 is increased compared to when various surface 61f treatments for the purpose of anti-reflection or the like are applied to the surface 61f of the power generating unit 6, and power generation can be performed even more efficiently.

[0051] (8) The power generation unit according to the eighth aspect is a power generation unit used in any one of the power generation systems (1) to (7), and includes a power generation section 6 including a photoelectric conversion element that converts infrared rays R1 emitted from the emitter 4 into electrical energy, and a reflecting section 7 that is provided on the opposite side of the power generation section 6 from the emitter 4 side and that reflects at least a portion of the infrared rays R1 that have passed through the power generation section 6 toward the emitter 4 side.

[0052] As a result, the infrared rays R1 emitted from the emitter 4 are converted into electrical energy in the power generation section 6 of the power generation unit 5, which is disposed at a distance from the emitter 4. A portion of the infrared rays R1 emitted from the emitter 4 passes through the power generation section 6. At least a portion of the infrared rays R1 that pass through the power generation section 6 is reflected toward the emitter 4 by a reflector 7 provided on the opposite side of the power generation section 6 from the emitter 4. As a result, the emitter 4 is also heated by the infrared rays R2 reflected toward the emitter 4 by the reflector 7. In this way, in addition to the heat supplied from the heat source 2, the emitter 4 is heated by the infrared rays R2 reflected toward the emitter 4 by the reflector 7, which further increases the temperature of the emitter 4 and increases the amount of energy of the infrared rays R1 radiated from the emitter 4. Furthermore, the heat supplied from the heat source 2 can be reduced by the amount of heat supplied to the emitter 4 by the infrared rays R2 reflected toward the emitter 4 by the reflector 7. Therefore, the proportion of infrared rays R1 emitted from the emitter 4 that are effectively utilized increases, and the power generation efficiency of the power generation unit 5 increases. Furthermore, the increased power generation efficiency leads to substantial cost reduction even when the same photoelectric conversion element 61 is used. As a result, power generation can be performed efficiently while keeping costs down.

[0053] (9) A manufacturing method of a power generation unit 5 according to a ninth aspect is a manufacturing method of a power generation unit 5 according to (8), and includes a step S1 of preparing the power generation section 6 and the reflecting section 7, and a step S2 of stacking the power generation section 6 and the reflecting section 7.

[0054] This makes it possible to manufacture the power generation unit 5 that can generate power efficiently while keeping costs down.

[0055] (10) The tenth aspect of the manufacturing method of the power generation unit 5 is the manufacturing method of the power generation unit 5 of (9), in which in the process of preparing the power generation section 6 and the reflecting section 7, a film formed to cover the surface of the power generation section 6 is removed.

[0056] In this way, by removing the film formed to cover the power generating unit 6, the infrared rays R1 emitted from the emitter 4 are made to directly enter the power generating unit 6. This increases the amount of energy of the infrared rays R1 that enter the power generating unit 6, enabling more efficient power generation.

[0057] According to the power generation system, power generation unit, and method for manufacturing a power generation unit of the present disclosure, it is possible to generate power efficiently while suppressing costs.

[0058] DESCRIPTION OF SYMBOLS 1... Power generation system 2... Heat source 3... System body 4... Emitter 5... Power generation unit 5f... Emitter-side facing surface 6... Power generation section 6g... Back surface 7... Reflecting section 8... Cooling section 61... Photoelectric conversion element 61f... Front surface 62... Collecting electrode 81, 82... Doped section A... Atmosphere R1, R2... Infrared rays S1... Step of preparing material S2... Step of stacking material

Claims

1. A power generation system comprising: an emitter that is heated by heat supplied from a heat source and radiates infrared rays; and a power generation unit that is arranged at a distance from the emitter and generates electricity by converting the infrared rays radiated from the emitter into electrical energy, wherein the power generation unit comprises: a power generation section including a photoelectric conversion element that converts the infrared rays radiated from the emitter into electrical energy; and a reflecting section that is provided on the opposite side of the power generation section from the emitter side and that reflects at least a portion of the infrared rays that pass through the power generation section towards the emitter side.

2. The power generation system according to claim 1, wherein the photoelectric conversion element is formed using a silicon material.

3. The power generation system according to claim 1 or 2, further comprising a cooling section for cooling the power generation section and the reflecting section.

4. The power generation system according to claim 1 or 2, wherein the emitter is heated to 1000° C. or higher.

5. The power generation system according to claim 1 or 2, wherein the power generation unit generates electric power in a temperature range of 50°C or higher and 150°C or lower.

6. The power generation system according to claim 1 or 2, wherein only the atmosphere of the space in which the power generation unit and the emitter are disposed is interposed between the power generation unit and the emitter.

7. The power generation system according to claim 1 or 2, wherein the surface of the power generation section facing the emitter is a smooth surface.

8. A power generation unit used in the power generation system described in claim 1 or 2, comprising: a power generation section including a photoelectric conversion element that converts infrared rays radiated from the emitter into electrical energy; and a reflecting section provided on the opposite side of the power generation section from the emitter side, and reflecting at least a portion of the infrared rays that have passed through the power generation section toward the emitter side.

9. A method for manufacturing a power generation unit according to claim 8, comprising the steps of: preparing the power generation section and the reflecting section; and stacking the power generation section and the reflecting section.

10. The method for producing a power generating unit according to claim 9, wherein in the step of preparing the power generating section and the reflecting section, a film formed so as to cover a surface of the power generating section is removed.

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