Coil component, electronic component including coil component, semiconductor component, and substrate

Abstract

A coil component according to the present invention comprises: an element body that includes a magnetic layer; and a first coil wiring that is provided inside the element body. The magnetic layer includes a resin, a first metal magnetic powder, a first iron oxide magnetic powder, and voids. The average particle diameter of the first metal magnetic powder is greater than the average particle diameter of the first iron oxide magnetic powder.

Description

Coil component, and electronic component, semiconductor component and substrate including the coil component

[0001] The present disclosure relates to a coil component, and to an electronic component, a semiconductor component, and a substrate that include the coil component.

[0002] In the past, inductor components have been studied that include an element body that includes a magnetic layer and a coil conductor formed inside the element body. For example, Japanese Patent Laid-Open Publication No. 2012-238840 (Patent Document 1) describes that the magnetic layer includes metal magnetic powder, voids, and a resin material.

[0003] JP 2012-238840 A

[0004] However, in the inductor components described in the prior art, increasing the filling rate of the metal magnetic powder, which is the magnetic material, increases the magnetic permeability, but also increases eddy current loss and reduces the Q value, which is a problem.

[0005] Therefore, an object of the present disclosure is to provide a coil component that has a high Q value and improves the efficiency of obtaining inductance.

[0006] In order to solve the above problem, a coil component according to one aspect of the present disclosure comprises: a base body including a magnetic layer; and first coil wiring arranged on the same plane within the base body, wherein the magnetic layer includes a resin, a first metal magnetic powder, a first iron oxide magnetic powder, and a void portion, and the average particle diameter of the first metal magnetic powder is larger than the average particle diameter of the first iron oxide magnetic powder.

[0007] When a first metal magnetic powder and a first iron oxide magnetic powder having a smaller average particle diameter than the first metal magnetic powder are used as the magnetic material, the spaces between the first metal magnetic powder particles can be filled with the first iron oxide magnetic powder. This allows the magnetic layer to maintain insulation while increasing the filling rate of the magnetic material and improving magnetic permeability. Furthermore, the average particle diameter of the first iron oxide magnetic powder can be made smaller than that of the first metal magnetic powder. As described above, reducing the average particle diameter of the first iron oxide magnetic powder allows the spaces between the first metal magnetic powder particles to be filled with the first iron oxide magnetic powder, safely increasing the filling rate. Furthermore, the voids contained in the resin can alleviate stress caused by heat, etc. As a result, a coil component with a high Q value and improved inductance acquisition efficiency can be obtained.

[0008] The average particle size is the arithmetic mean value obtained from a scanning electron microscope.

[0009] According to one aspect of the present disclosure, a coil component having a high Q value and improved inductance acquisition efficiency can be provided.

[0010] 3A is a perspective perspective view of an inductor component of a first embodiment. FIG. 3B is an exploded plan view of the inductor component of FIG. 1. FIG. 3C is a partially enlarged view of the cross section of FIG. 1. FIG. 3D is an explanatory schematic diagram of FIG. 3A. FIG. 3D is an explanatory diagram for explaining a portion of a magnetic layer of a first modified example. FIG. 3E is a partially enlarged view of the magnetic layer of a first modified example. FIG. 3F is a cross-sectional view taken along line VI-VI showing a manufacturing process of an inductor component. FIG. 3G is a cross-sectional view taken along line VI-VI showing a manufacturing process of an inductor component. FIG. 3H is a cross-sectional view taken along line VI-VI showing a manufacturing process of an inductor component. FIG. 3I is a cross-sectional view taken along line VI-VI showing a manufacturing process of an inductor component. 7A to 7C are cross-sectional views taken along VII-VII illustrating the manufacturing process of the inductor component. 7B to 7C are cross-sectional views taken along VII-VII illustrating the manufacturing process of the inductor component. 7C to 7C are cross-sectional views taken along VII-VII illustrating the manufacturing process of the inductor component. 7D to 7C are explanatory views illustrating a portion of a magnetic layer included in the inductor component of a third embodiment. 7E to 7C are enlarged views of a portion of a magnetic layer included in the inductor component of a third embodiment. 7F to 7C are cross-sectional views taken along VII-VII illustrating the manufacturing process of the inductor component. 7G to 7C are cross-sectional views taken along VII-VII illustrating the manufacturing process of the inductor component. 7G to 7C are cross-sectional views taken along VII-VII illustrating the manufacturing process of the inductor component. 7H ...1A to 1C are YZ cross-sectional views showing the manufacturing process of an inductor component; 1B to 1C are YZ cross-sectional views showing the manufacturing process of an inductor component; 1C to 1D are YZ cross-sectional views showing the manufacturing process of an inductor component; 1D to 1E are YZ cross-sectional views showing the manufacturing process of an inductor component;

[0011] An inductor component, which is one aspect of the coil component of the present disclosure, will be described in detail below with reference to the illustrated embodiments. Note that although the present disclosure describes an inductor component, other coil components, capacitor components, etc. may also be used. Also, the drawings include some schematic views and may not reflect actual dimensions or proportions.

[0012] <First embodiment> Fig. 1 is a perspective view showing a first embodiment of an inductor component 1. Fig. 2 is an exploded plan view of the inductor component 1. Fig. 3A is an enlarged partial view of a cross section of the inductor component 1. Fig. 3B is an explanatory schematic diagram of Fig. 3A. In Fig. 1, external terminals are depicted with two-dot oblique lines. Insulating layers are omitted from Figs. 1 and 2.

[0013] The inductor component 1 is a surface-mount type inductor component that is mounted on electronic devices such as personal computers, DVD players, digital cameras, TVs, mobile phones, and car electronics. The inductor component 1 may be a semiconductor component. The inductor component 1 may be, for example, a power inductor used in a power supply circuit of an electronic device. The inductor component 1 may also be a substrate that includes the inductor component 1. However, the uses of the inductor component 1 are not limited to those described above.

[0014] The inductor component 1 is a component having an overall rectangular parallelepiped shape. The dimensions of the inductor component 1 are, for example, 1.0 mm × 0.5 mm × 0.5 mm (X dimension × Y dimension × Z dimension). In this disclosure, the term "rectangular parallelepiped shape" also includes components having irregularities on some or all of their faces. Furthermore, in the "rectangular parallelepiped shape" in this specification, each face does not necessarily have to be perfectly parallel to the opposite face; they may be slightly inclined. In other words, adjacent faces do not necessarily have to form a right angle. The shape of the inductor component 1 is not particularly limited, and may be a cylindrical shape, a polygonal columnar shape, a truncated cone shape, or a truncated polygonal pyramid shape. Furthermore, the size of the inductor component 1 is not particularly limited.

[0015] 1 to 3A, the inductor component 1 has an element body 10 including a magnetic layer 11, inductor wiring (coil wiring) 21, 22, and 23 arranged within the element body 10, vertical wiring 81 and 82, external terminals 41 and 42, and a coating film 50. In FIG. 2, the direction from the upper left layer to the lower right layer (i.e., the Z direction) is the stacking direction.

[0016] The element body 10 is formed in a substantially rectangular parallelepiped shape. The surface of the element body 10 includes a first end face 15 and a second end face 16 that face each other, a first side face 13 and a second side face 14 that face each other, a second main surface (top surface) 17 that is connected between the first end face 15 and the second end face 16 and between the first side face 13 and the second side face 14, and a first main surface (bottom surface) 18 that faces the second main surface 17. The first main surface 18 is the surface that faces the mounting substrate when the inductor component 1 is mounted on a mounting substrate (not shown).

[0017] As shown in the figure, the X direction is perpendicular to the first end surface 15 and the second end surface 16 and is the direction from the first end surface 15 to the second end surface 16. The Y direction is perpendicular to the first side surface 13 and the second side surface 14 and is the direction from the first side surface 13 to the second side surface 14. The Z direction is perpendicular to the second main surface 17 and the first main surface 18 and is the direction from the second main surface 17 to the first main surface 18. The X direction is also referred to as the width direction of the element body 10, the Y direction is also referred to as the length direction of the element body 10, and the Z direction is also referred to as the height direction of the element body 10. The forward Z direction is the upward direction, and the reverse Z direction is the downward direction. The X direction, Y direction, and Z direction are perpendicular to each other and, when arranged in the order X, Y, and Z, form a right-handed system. The size in the X direction may be referred to as width, the size in the Y direction as length, and the size in the Z direction as height. The X direction, Y direction, and Z direction are also referred to as width, length, and height, respectively. The same applies to other embodiments and modified examples.

[0018] The first to third inductor wirings 21 , 22 , 23 are disposed within the element body 10 .

[0019] The first inductor wiring 21 includes a conductive material and is wound on a plane. In other words, the first inductor wiring 21 is a spiral wiring. Here, spiral wiring refers to wiring having a curved (two-dimensional curved) shape extending on a plane. In this embodiment, the number of turns of the curve in the first inductor wiring 21 exceeds one. Note that the number of turns may be less than one, and the first inductor wiring 21 may have multiple curves wound in different directions, or may have straight lines in some parts. The direction perpendicular to the plane on which the first inductor wiring 21 is wound is the Z direction (up and down direction) in the drawing.

[0020] The first inductor wiring 21 has an inner peripheral surface and an outer peripheral surface. When viewed from above (toward the first main surface 18), the first inductor wiring 21 is formed in a spiral shape in a clockwise direction from the inner peripheral end 21a to the outer peripheral end 21b. The inner peripheral end 21a and the outer peripheral end 21b may not be strictly ends but may extend slightly inward, or may have a protruding portion that serves as a current path. The inner peripheral end 21a is formed in a semicircular shape. The outer peripheral end 21b is formed in a substantially rectangular shape. The shape of the inner peripheral end 21a is not limited to a semicircular shape, but may also be a circle including an ellipse, an arc, a polygon, or a combination thereof. The shape of the outer peripheral end 21b is not limited to a substantially rectangular shape, but may also be a rectangle, a semicircle, a circle including an ellipse, an arc, a polygon, or a combination thereof.

[0021] Specifically, when viewed from above, the first inductor wiring 21 includes a first portion 21c extending from an inner peripheral end 21a located closer to the second end face 16 than the center line between the first end face 15 and the second end face 16 toward the second end face 16 in the reverse Y-direction, a second portion 21d connected to the first portion 21c and extending parallel to the first side face 13 in the reverse X-direction, a third portion 21e connected to the second portion 21d and extending parallel to the first end face 15 in the Y-direction, a fourth portion 21f connected to the third portion 21e and extending parallel to the second side face 14 in the X-direction, and a fifth portion 21g connected to the fourth portion 21f and extending parallel to the second end face 16 in the reverse Y-direction. In the first inductor wiring 21, the second portion 21d is located closest to the first side face 13. In the first inductor wiring 21, the fourth portion 21f is located closest to the second side surface 14. In the first inductor wiring 21, the third portion 21e is located closest to the first end surface 15. In the first inductor wiring 21, the fifth portion 21g is located closest to the second end surface 16. The corners between the first portion 21c and the second portion 21d, between the second portion 21d and the third portion 21e, between the third portion 21e and the fourth portion 21f, and between the fourth portion 21f and the fifth portion 21g are all curved. However, the corners do not have to be curved.

[0022] The first portion 21c has a width dimension (X-direction dimension) W11. The second portion 21d has a length dimension (Y-direction dimension) L11. The third portion 21e has a width dimension W12. The fourth portion 21f has a length dimension L12. The fifth portion 21g has a width dimension W13. Note that the width dimension refers to the maximum dimension in the width direction in the X-direction. Furthermore, the length dimension refers to the maximum dimension in the length direction in the Y-direction.

[0023] In the first inductor wiring 21, the width W11 of the first portion 21c is the same as the length L11 of the second portion 21d. The width W12 of the third portion 21e, the length L12 of the fourth portion 21f, and the width W13 of the fifth portion 21g are the same. The length L12 of the fourth portion 21f is at least twice the length L11 of the second portion 21d. Note that "the same value" may mean that they are completely the same, or that they may differ slightly. In this embodiment, for the convenience of the inductor wiring, the length L12 is at least twice the length L11. However, the values ​​of the length L11 and L12 and the width W11, W12, and W13 are not limited to those described above and may be different or the same. The length and width values ​​are also referred to as wiring widths.

[0024] In the first inductor wiring 21, the spiral wirings are separated from each other, for example, the outer peripheral surface of the first portion 21c and the inner peripheral surface of the fifth portion 21g. This maintains insulation between the spiral wirings. The distance between the spiral wirings is, for example, 10 μm.

[0025] The height dimension of the first inductor wiring 21 in the Z direction is not particularly limited, but is, for example, 10 μm to 200 μm inclusive. Note that the height dimension refers to the maximum dimension in the height direction in the Z direction.

[0026] As an example of the first inductor wiring 21, the length dimension L11 of the second portion 21d is 90 μm, the length dimension L12 of the fourth portion 21f is 190 μm, and the height dimension of the first inductor wiring 21 is 70 μm.

[0027] The second inductor wiring 22 is made of a conductive material and is wound on a plane. In other words, the second inductor wiring 22 is a spiral wiring. In this embodiment, the number of turns of the curved line in the second inductor wiring 22 exceeds one. However, the number of turns may be less than one, and the second inductor wiring 22 may have multiple curved lines wound in different directions, or may have some straight lines.

[0028] The second inductor wiring 22 has an inner peripheral surface and an outer peripheral surface. When viewed from above, the second inductor wiring 22 extends in the normal direction from the inner peripheral end 22a to the outer peripheral end 22b and is spirally wound counterclockwise. The inner peripheral end 22a and the outer peripheral end 22b may not be strictly ends but may extend slightly inward, or may have a protruding portion that serves as a current path. The inner peripheral end 22a is formed in a semicircular shape. The outer peripheral end 22b is also formed in a semicircular shape. Note that the shapes of the inner peripheral end 22a and the outer peripheral end 22b are not limited to semicircular, and may be circles including ellipses, arcs, polygons, or combinations thereof.

[0029] Specifically, the second inductor wiring 22 includes an inner peripheral end 22a, which is located closer to the second end face 16 than the center line between the first end face 15 and the second end face 16 when viewed from above, and a first portion 22c extending in the Y direction parallel to the second end face 16, a second portion 22d connected to the first portion 22c and extending in the reverse X direction parallel to the second side face 14, and a third portion 22e connected to the second portion 22d and extending in the reverse Y direction parallel to the first end face 15. The second inductor wiring 22 comprises a fourth portion 22f connected to the third portion 22e and extending parallel to the first side surface 13 in the X-direction, a fifth portion 22g connected to the fourth portion 22f and extending parallel to the second end surface 16 in the Y-direction, a sixth portion 22h connected to the fifth portion 22g and extending parallel to the second side surface 14 in the reverse X-direction, and a seventh portion 22k connected to the sixth portion 22h and extending parallel to the first end surface 15 in the reverse Y-direction and having an outer peripheral end 22b. In the second inductor wiring 22, the fourth portion 22f is located closest to the first side surface 13. In the second inductor wiring 22, the sixth portion 22h is located closest to the second side surface 14. In the second inductor wiring 22, the seventh portion 22k is located closest to the first end surface 15. In the second inductor wiring 22, the fifth portion 22g is located closest to the second end face 16. Note that the corners between the first portion 22c and the second portion 22d, between the second portion 22d and the third portion 22e, between the third portion 22e and the fourth portion 22f, between the fourth portion 22f and the fifth portion 22g, between the fifth portion 22g and the sixth portion 22h, and between the sixth portion 22h and the seventh portion 22k are all curved. Note that these corners do not have to be curved.

[0030] The first portion 22c has a width dimension W21. The second portion 22d has a length dimension L22. The third portion 22e has a width dimension W22. The fourth portion 22f has a length dimension L21. The fifth portion 22g has a width dimension W23. The sixth portion 22h has a length dimension L23. The seventh portion 22k has a width dimension W24.

[0031] In the second inductor wiring 22, the width W21 of the first portion 22c, the length L22 of the second portion 22d, the width W22 of the third portion 22e, the length L21 of the fourth portion 22f, the width W23 of the fifth portion 22g, the length L23 of the sixth portion 22h, and the width W24 of the seventh portion 22k are all the same value. Note that "the same value" may mean that they are completely the same, but may also mean that there are some differences. Note that the wiring widths of the second inductor wiring 22 do not have to be the same value, but may have different values.

[0032] The height dimension of the second inductor wiring 22 in the Z direction is not particularly limited, but is, for example, 10 μm or more and 200 μm or less.

[0033] As an example of the second inductor wiring 22, the width dimension W21 of the first portion 22c, the length dimension L22 of the second portion 22d, the width dimension W22 of the third portion 22e, the length dimension L21 of the fourth portion 22f, the width dimension W23 of the fifth portion 22g, the length dimension L23 of the sixth portion 22h, and the width dimension W24 of the seventh portion 22k are each 90 μm, and the height dimension of the second inductor wiring 22 is 70 μm.

[0034] In the second inductor wiring 22, the spiral wirings are separated from one another, for example, between the outer peripheral surface of the first portion 22c and the inner peripheral surface of the fifth portion 22g, between the outer peripheral surface of the second portion 22d and the sixth portion 22h, and between the third portion 22e and the seventh portion 22k. This maintains insulation between the spiral wirings. The distance between the spiral wirings is, for example, 10 μm.

[0035] The third inductor wiring 23 is made of a conductive material. When viewed from above, the third inductor wiring 23 is a linear wiring that is arranged in parallel along the second end face 16. When viewed from above, the third inductor wiring 23 has a first end 23a on the first side face 13 side and a second end 23b on the second side face 14 side. The first end 23a is formed in a semicircular shape. The second end 23b is formed in a semicircular shape. Note that the shapes of the first end 23a and the second end 23b are not limited to semicircular shapes, and may be circles including ellipses, arcs, polygons, or combinations thereof.

[0036] The height dimension of the third inductor wiring 23 in the Z direction is not particularly limited, but is, for example, 10 μm to 200 μm In the example of the third inductor wiring 23, the height dimension is 70 μm.

[0037] The third inductor wiring 23 is on the same plane as the second inductor wiring 22. When viewed from above, the third inductor wiring 23 is located closer to the second end face 16 than the second inductor wiring 22. When viewed from above, the second inductor wiring 22 and the third inductor wiring 23 are spaced apart. This insulates the second inductor wiring 22 from the third inductor wiring 23. The distance between the outer peripheral surface of the fifth portion 22g of the second inductor wiring 22 and the surface of the third inductor wiring 23 on the second inductor wiring 22 side is, for example, 10 μm.

[0038] When viewed from the second end face 16, the third inductor wiring 23 has a surface that does not overlap with the second inductor wiring 22. Specifically, when viewed from the second end face 16, the second end 23b of the third inductor wiring 23 is located closer to the first side face 13 than the outer circumferential end of the second inductor wiring 22 on the second side face 14 side. By having such a configuration, the volume of the magnetic portion can be increased, and the efficiency of obtaining inductance can be improved.

[0039] When viewed from the second end face 16 , the first inductor wiring 21 is spaced apart from the second inductor wiring 22 and the third inductor wiring 23 .

[0040] When viewed from above, the second portion 22d and the sixth portion 22h of the second inductor wiring 22 are located on the fourth portion 21f of the first inductor wiring 21. When viewed from above, the third portion 22e and the seventh portion 22k of the second inductor wiring 22 are located on the third portion 21e of the first inductor wiring 21. When viewed from above, the fourth portion 22f of the second inductor wiring 22 is located on the second portion 21d of the first inductor wiring 21. When viewed from above, the fifth portion 22g of the second inductor wiring 22 and the third inductor wiring 23 are located on the fifth portion 21g of the first inductor wiring 21.

[0041] The first inductor wiring 21, the second inductor wiring 22, and the third inductor wiring 23 are made of a conductive material, for example, a metallic material with low electrical resistance such as Cu, Ag, Au, Fe, or an alloy containing these, which can reduce the DC resistance of the first inductor wiring 21, the second inductor wiring 22, and the third inductor wiring 23. The first inductor wiring 21, the second inductor wiring 22, and the third inductor wiring 23 may have different compositions or the same composition.

[0042] The via wiring connects the inductor wirings to each other, and also connects the inductor wirings to the pillar wirings.

[0043] Specifically, the first via wiring 91 extends in the Z direction and connects the inner peripheral end 21 a of the first inductor wiring 21 and the inner peripheral end 22 a of the second inductor wiring 22. The first via wiring 91 has a circular shape. The second via wiring 92 extends in the Z direction and connects the outer peripheral end 22 b of the first inductor wiring 21 and the first end 23 a of the third inductor wiring 23. The second via wiring 92 has a circular shape. The shapes of the first via wiring 91 and the second via wiring 92 are not particularly limited and may be other shapes, for example, an elliptical shape.

[0044] The third via wiring 93 extends in the Z direction and connects the outer peripheral end 22 b of the second inductor wiring 22 and the first columnar wiring 51. The third via wiring 93 has an elliptical shape. The fourth via wiring 94 extends in the Z direction and connects the second end 23 b of the third inductor wiring 23 and the second columnar wiring 52. The fourth via wiring 94 has an elliptical shape. The shapes of the third via wiring 93 and the fourth via wiring 94 are not particularly limited and may be other shapes, for example, a circular shape.

[0045] When viewed from above, the second via wiring 92 is located on the first side surface 13 side, and the fourth via wiring 94 is located on the second side surface 14 side. When viewed from above, the second via wiring 92 and the fourth via wiring 94 do not overlap. However, when viewed from above, the second via wiring 92 and the fourth via wiring 94 may at least partially overlap.

[0046] The magnetic layer 11 is included in the element body 10. The first main surface of the magnetic layer 11 corresponds to the first main surface 18 of the element body 10, and the second main surface of the magnetic layer 11 corresponds to the second main surface 17 of the element body 10.

[0047] The magnetic layer 11 is made up of a resin 72, a magnetic material 70, and voids 71. In this embodiment, the magnetic material 70 includes first metal magnetic powder 73 and first iron oxide magnetic powder 74.

[0048] The magnetic layers 11 sandwich the inductor wirings 21, 22, and 23 from both sides in the Z direction, and are also disposed inside and outside the inductor wirings 21, 22, and 23. In this manner, the magnetic layers 11 form a closed magnetic circuit with the inductor wirings 21, 22, and 23. The magnetic layer 11 may be a laminate of multiple magnetic layers, or may be integrated as the magnetic layer 11.

[0049] Specifically, the magnetic layer 11 is formed by sequentially stacking a first magnetic portion 26a (also referred to as a lower magnetic layer), a second magnetic portion 26b, a third magnetic portion 26c, a fourth magnetic portion 26d, a fifth magnetic portion 26e, and a sixth magnetic portion 26f (also referred to as an upper magnetic layer). The second magnetic portion 26b has a first inductor wiring 21 and an inner magnetic path portion 24 provided inside the first inductor wiring 21 and an outer magnetic path portion 25 provided outside the first inductor wiring 21. The third magnetic portion 26c has first and second via wirings 91 and 92. The fourth magnetic portion 26d has a second inductor wiring 22 and a third inductor wiring 23 and has an inner magnetic path portion 24 provided inside the second inductor wiring 22 and an outer magnetic path portion 25 provided outside the second and third inductor wirings 22 and 23. The fifth magnetic portion 26e and the sixth magnetic portion 26f have first and second perpendicular wirings 81 and 82. The fifth magnetic part 26 e has third and fourth via wirings 93 and 94 .

[0050] The height of the first magnetic portion 26a is preferably greater than the height of each of the second to sixth magnetic portions 26b to 26f. This configuration improves the efficiency of inductance acquisition without increasing the difficulty of processing. For example, increasing the height of the magnetic portions 26b to 26f improves the efficiency of inductance acquisition, but increases the difficulty of forming the inductor wiring and via wiring. In the first embodiment, the height of the first magnetic portion 26a is 230 μm, and the height of the sixth magnetic portion 26f is 70 μm. The height of the first magnetic portion 26a may be the same as or smaller than the height of each of the second to sixth magnetic portions 26b to 26f. Furthermore, the heights of the second to sixth magnetic portions 26b to 26f may be the same or different.

[0051] The insulating layer 31 is embedded in the element body 10 (magnetic layer 11). The insulating layer 31 is in direct contact with the first to third inductor wirings 21 to 23 and covers the first to third inductor wirings 21 to 23. This improves insulation between the first inductor wirings 21, between the second inductor wirings 22, and between the second inductor wiring 22 and the third inductor wiring 23. The insulating layer 31 may cover at least a portion of the first to third inductor wirings 21 to 23. The insulating layer 31 may be in direct contact with the first to third inductor wirings 21 to 23, or may be disposed at a distance from the first to third inductor wirings 21 to 23. For example, the insulating layer 31 may cover only the bottom surfaces (lower surfaces) of the first to third inductor wirings 21 to 23, only the top surfaces (upper surfaces) and bottom surfaces, or only the side surfaces.

[0052] The insulating layer 31 is preferably located in a portion that separates the spiral wiring of the first inductor wiring 21, in a portion that separates the spiral wiring of the second inductor wiring 22, and in a portion that separates the second inductor wiring 22 and the third inductor wiring 23.

[0053] The insulating layer 31 includes a non-magnetic insulating material that does not contain a magnetic substance, and is formed, for example, from an insulating resin material that includes an inorganic filler and an organic resin material.

[0054] The insulating layer 31 may be made of, for example, silica (silicon dioxide, typically SiO ２ A resin containing silica powder can be used. In this case, it is possible to improve the strength, workability, and electrical properties of the insulating layer 31. Note that the insulating layer 31 does not necessarily have to contain silica powder.

[0055] Furthermore, the resin contained in the insulating layer 31 may include an insulating resin, and preferably includes at least one resin selected from the group consisting of epoxy resin, acrylic resin, phenol resin, polyimide resin, and liquid crystal polymer resin. When the insulating layer 31 includes such an insulating resin (organic resin), the first inductor wiring 21, the second inductor wiring 22, and the third inductor wiring 23 and the resin 72 contained in the magnetic layer 11 adhere to each other via the resin of the insulating layer 31, thereby improving the adhesion between the first inductor wiring 21, the second inductor wiring 22, and the third inductor wiring 23 and the magnetic layer 11. Furthermore, the insulating organic resin of the insulating layer 31 makes the insulating layer 31 softer than inorganic materials, thereby imparting flexibility to the inductor component 1 and improving its mechanical strength and resistance to thermal shock.

[0056] The thickness of the insulating layer 31 is not particularly limited, but may be, for example, 1 μm or more and 20 μm or less. In the first embodiment, the insulating layer 31 forms a layer with a thickness of 10 μm in contact with the first to third inductor wirings 21 to 23. The thickness of the insulating layer 31 refers to the maximum thickness in the direction perpendicular to the surface of the inductor wiring.

[0057] The insulating layer 32 included in the insulating layer 31 is embedded in the element body 10. The insulating layer 32 is located in the fourth magnetic unit 26d. When viewed from the second end face 16, the insulating layer 32 is located on a non-overlapping surface between the third inductor wiring 23 and the second inductor wiring 22.

[0058] The first vertical wiring 81 extends in the Z direction from the outer peripheral end 22b side of the second inductor wiring 22 to expose the fifth magnetic portion 26e and the sixth magnetic portion 26f on the first main surface 18 of the element body 10. Specifically, the first vertical wiring 81 extends upward from the outer peripheral end 22b of the second inductor wiring 22 and has a third via wiring 93 that passes through the fifth magnetic portion 26e, and a first columnar wiring 51 that extends on the opposite side of the third via wiring 93 from the second inductor wiring 22 and passes through the sixth magnetic portion 26f.

[0059] The second vertical wiring 82 extends in the Z direction from the second end 23b side of the third inductor wiring 23 so as to expose the fifth magnetic portion 26e and the sixth magnetic portion 26f on the first main surface 18 of the element body 10. Specifically, the second vertical wiring 82 has a fourth via wiring 94 that extends upward from the second end 23b of the third inductor wiring 23 and penetrates the fifth magnetic portion 26e, and a second columnar wiring 52 that extends on the opposite side of the fourth via wiring 94 from the third inductor wiring 23 and penetrates the sixth magnetic portion 26f.

[0060] The first vertical wiring 81 and the second vertical wiring 82 include a conductive material, such as a low-resistance metal such as copper, silver, or gold. Preferably, the first vertical wiring 81 and the second vertical wiring 82 are made of a conductor containing copper or a copper compound. Using such materials reduces the manufacturing cost of the first and second vertical wirings 81 and 82 and reduces the DC resistance of the first and second vertical wirings 81 and 82. The first and second vertical wirings 81 and 82 may be made of copper plating formed by SAP (electroless plating, semi-additive process). Using SAP allows the first and second vertical wirings 81 and 82 to be obtained inexpensively with low resistance. The first and second vertical wirings 81 and 82 may also be formed by plating methods other than SAP, such as sputtering, vapor deposition, or coating.

[0061] The first and second external terminals 41, 42 are electrically connected to the first to third inductor wirings 21 to 23 and are provided on the first main surface 18 of the element body 10. Specifically, the first external terminal 41 is provided on the first main surface 18 and is arranged on the surface of the first vertical wiring 81 exposed from the first main surface 18. The second external terminal 42 is provided on the first main surface 18 and is arranged on the surface of the second vertical wiring 82 exposed from the first main surface 18. Note that, although the first and second external terminals 41, 42 are provided only on the first main surface 18 in this embodiment, they may also be provided on the first end surface 15 and a portion of the first main surface 18 adjacent to the first end surface 15, and on the second end surface 16 and a portion of the first main surface 18 adjacent to the second end surface 16. In addition, the first external terminal 41 may be provided on the first end face 15 of the base body 10 and a portion of the first side face 13, second side face 14, second main face 17 and first main face 18 adjacent to the first end face 15, and the second external terminal 42 may be provided on the second end face 16 and a portion of the first side face 13, second side face 14, second main face 17 and first main face 18 adjacent to the second end face 16.

[0062] When viewed from above, the first external terminal 41 covers the exposed surface of the first vertical wire 81. The second external terminal 42 covers the exposed surface of the second vertical wire 82. The areas of the first and second external terminals 41, 42 are larger than the areas of the first and second vertical wires 81, 82. Note that when viewed from the first main surface 18, the areas of the first and second external terminals 41, 42 may be smaller than the areas of the first and second vertical wires 81, 82.

[0063] The first and second external terminals 41, 42 are formed of a low-resistance metal such as copper, silver, or gold. Conductors made of copper or a copper compound may also be used for the first and second external terminals 41, 42. This configuration reduces the manufacturing cost of the first and second external terminals 41, 42 and reduces the DC resistance of the first and second external terminals 41, 42. Preferably, the first and second external terminals 41, 42 are laminated bodies in which copper, nickel, and gold are stacked in this order. For example, the first and second external terminals 41, 42 are laminated in thicknesses of 5 μm, 5 μm, and 0.1 μm, respectively, in this order. The first and second external terminals 41, 42 may have different compositions.

[0064] The first to third inductor wirings 21 to 23, the first and second vertical wirings 81 and 82, and the first and second external terminals 41 and 42 may be made of a conductor mainly composed of copper. This configuration can improve the bonding strength and conductivity between the first to third inductor wirings 21 to 23, the first and second vertical wirings 81 and 82, and the first and second external terminals 41 and 42. Preferably, the first and second external terminals 41 and 42 are made of copper plating formed by SAP. Using the SAP method makes it possible to obtain low-resistance first and second external terminals 41 and 42 at low cost. Note that the first and second external terminals 41 and 42 may also be formed by plating methods other than SAP, such as sputtering, vapor deposition, or coating.

[0065] The first and second external terminals 41, 42 may be subjected to anti-rust treatment. The anti-rust treatment is to form a coating of nickel (Ni), gold, tin (Sn), or the like. By performing the anti-rust treatment, copper erosion by solder and rust can be suppressed, and reliability in mounting the inductor component 1 can be improved.

[0066] The coating film 50 is provided on the surface of the magnetic layer 11. The coating film 50 covers part of the first main surface 18, leaving the end faces of the first and second external terminals 41, 42 exposed. This improves the insulation between the external terminals 41, 42. The coating film 50 can also hide scratches on the first main surface 18 of the element body 10. The coating film 50 does not necessarily have to be provided. The coating film 50 may also be provided on a surface other than the first main surface 18. Parts of the first and second external terminals 41, 42 may also cover part of the exposed surface of the coating film 50.

[0067] The thickness of the coating film 50 is not particularly limited, but is in the range of 1 μm to 20 μm, for example, 10 μm.

[0068] The coating film 50 is made of a non-magnetic insulating material that does not contain a magnetic substance. The coating film 50 is formed of, for example, a photosensitive resist made of an organic insulating resin such as an epoxy resin, a phenolic resin, or a polyimide resin, a solder resist, or a dry film resist. The coating film 50 may be made of the same material as the insulating layer 31, or a different material.

[0069] The magnetic layer 11 will be described in detail below.

[0070] As shown in Fig. 3A, the magnetic layer 11 includes a resin 72, a first metal magnetic powder 73, a first iron oxide magnetic powder 74, and voids 71, and the average particle diameter of the first metal magnetic powder 73 is larger than the average particle diameter of the first iron oxide magnetic powder 74. Fig. 3B is a schematic diagram illustrating the first metal magnetic powder 73 and the first iron oxide magnetic powder 74 of Fig. 3A. In Fig. 3B, the voids 71 ​​and the resin 72 are omitted.

[0071] In the past, attempts have been made to increase the packing rate of the magnetic layer by using only the first metal magnetic powder as the magnetic material, but increasing the packing rate of the first metal magnetic powder can cause particles of the first metal magnetic powder to come into contact with each other, which can increase the loss tan δ of the magnetic material due to eddy current loss, making it difficult to increase the packing rate of the first metal magnetic powder.

[0072] In contrast, in this embodiment, the magnetic material 70 includes a first metal magnetic powder 73 and a first iron oxide magnetic powder 74. Because the average particle diameter of the first iron oxide magnetic powder 74 is smaller than that of the first metal magnetic powder 73, the first iron oxide magnetic powder 74 can be disposed between the first metal magnetic powders 73. In this embodiment, by using the first metal magnetic powder 73 and the first iron oxide magnetic powder 74, the filling rate of the magnetic material 70 can be increased while maintaining insulation, thereby improving magnetic permeability. Furthermore, the voids 71 ​​can alleviate stress caused by heat, etc. As described above, an inductor component 1 with excellent inductance acquisition efficiency can be obtained. The "filling rate of the magnetic material 70" refers to the ratio of the area of ​​the magnetic material 70 to the area of ​​the magnetic layer 11 in any cross section perpendicular to the first side surface 13 and the second side surface 14 and the second main surface 17 and the first main surface 18 of the magnetic layer 11.

[0073] In the inductor component 1 and the magnetic layer 11, the average particle diameter is an arithmetic mean value obtained by scanning electron microscope (hereinafter sometimes referred to as "SEM") in a cross section perpendicular to the first main surface 18 and the second main surface. Specifically, in an SEM image at a magnification where 15 or more first metal magnetic powder particles 73 can be seen, the area of ​​each first metal magnetic powder particle 73 is measured, the circle-equivalent diameter is calculated using {4 / π × (area)}^(1 / 2), and the arithmetic mean value is used as the average particle diameter of the first metal magnetic powder particles 73. If the outline of the first metal magnetic powder particles 73 is unclear in the SEM image, image processing can be used. Note that in the raw material state of the first metal magnetic powder 73, the average particle diameter is the median diameter D50, which is the particle size corresponding to 50% of the integrated value in the particle size distribution obtained by laser diffraction / scattering.

[0074] The first metal magnetic powder 73 may be, for example, a magnetic metal containing iron (Fe). The first metal magnetic powder 73 may contain iron alone or may be an alloy containing iron. For example, the first metal magnetic powder 73 is an iron-silicon alloy such as an iron-copper (Cu) alloy or an iron-silicon (Si)-chromium (Cr) alloy, an iron-cobalt (Co) alloy, or an iron alloy such as permalloy (NiFe), or an amorphous alloy thereof. The first metal magnetic powder 73 is preferably carbonyl iron (carbonyl Fe, Fe(CO) ５ ) are listed.

[0075] Preferably, the first metal magnetic powder 73 contains Fe and does not contain O. Here, "does not contain O" means that the elemental proportion of oxygen in the first metal magnetic powder 73 is 5% by mass or less, and preferably 0% by mass.

[0076] The first metal magnetic powder 73 does not necessarily have to be spherical, but is preferably spherical. In this specification, the term "spherical" includes spherical shapes with a constant diameter, as well as spherical shapes with a missing portion and distorted spherical shapes. The average particle diameter of the first metal magnetic powder 73 is, for example, 0.5 μm or more and 2.5 μm or less. Here, the average particle diameter is a value measured using a SEM.

[0077] The first metal magnetic powder 73 may have an insulating coating portion on its surface. That is, the first metal magnetic powder 73 may have a metal magnetic powder portion and an insulating coating portion provided on the surface of the metal magnetic powder portion.

[0078] The first iron oxide magnetic powder 74 may be, for example, iron oxide (II) (FeO), iron oxide (III) (Fe ３ O ４ ) is included.

[0079] The first iron oxide magnetic powder 74 may further contain other atoms. Examples of such other atoms include Cu, Al, Zr, and C. The first iron oxide magnetic powder 74 containing other atoms can be obtained, for example, by adding the other atoms to an iron oxide slurry. Adding the other atoms can reduce lattice defects in the first iron oxide magnetic powder 74 and control the crystallinity. For example, the first iron oxide magnetic powder 74 may contain 50% to 69% by mass of Fe and 19.5% to 24.7% by mass of O. The first iron oxide magnetic powder 74 may also contain 19.5% to 24.7% by mass of C, 2.2% to 2.5% by mass of Cu, 1.5% to 1.7% by mass of Zr, and 1.2% to 1.2% by mass of Al.

[0080] In the present disclosure, the average particle size of the first iron oxide magnetic powder 74 is measured using the same method as that for the first metal magnetic powder 73 .

[0081] The first iron oxide magnetic powder 74 does not necessarily have to be spherical, but is preferably spherical. The average particle diameter of the first iron oxide magnetic powder 74 is, for example, 0.01 μm or more and 0.5 μm or less.

[0082] The resin 72 preferably contains at least one of an epoxy resin and an acrylic resin, which can improve the insulating properties of the magnetic layer 11. Furthermore, the stress relaxation effect of the resin 72 can improve the mechanical strength of the magnetic layer 11.

[0083] The voids 71 ​​are contained in the resin 72 and the magnetic material 70. The voids 71 ​​may be in contact with only the resin 72, or may be in contact with both the resin 72 and the magnetic material 70. The voids 71 ​​can be formed, for example, by sintering a composition containing the resin 72 and the magnetic material 70. Hereinafter, the composition containing the resin 72 and the magnetic material 70 may be referred to as composition C.

[0084] Preferably, at least one first metal magnetic powder 73 and at least one first iron oxide magnetic powder 74 are in contact with each other. With the above configuration, the filling rate of the magnetic material 70 is increased. Here, "in contact" means that at least one first metal magnetic powder 73 and at least one first iron oxide magnetic powder 74 are in contact with each other in any cross section perpendicular to the first side surface 13, the second side surface 14, and the first main surface 18, the second main surface 17. Note that, when the first metal magnetic powder 73 has an insulating coating, the contact between the first metal magnetic powder 73 and the first iron oxide magnetic powder 74 means contact between the insulating coating and the first iron oxide magnetic powder 74.

[0085] Contact between the first metal magnetic powder 73 and the first iron oxide magnetic powder 74 can be confirmed by an image acquired using an SEM. To acquire an SEM image, first, a cross section of the central portion of the inductor component 1 is exposed by polishing. Then, an image of the magnetic layer 11 in the cross section of the inductor component 1 is acquired using an SEM. Images of three or more different locations in the vertical direction (Z direction) of the magnetic layer 11 in the cross section of the inductor component 1 are acquired at an appropriate magnification, and the acquired SEM images are confirmed to be in contact between the first metal magnetic powder 73 and the first iron oxide magnetic powder 74. The magnification of the SEM can be changed appropriately depending on the size of the first metal magnetic powder 73. However, a magnification at which 15 or more first metal magnetic powder particles 73 can be confirmed is preferred. For example, the magnification can be in the range of 500x to 5,000x, and preferably 5,000x. The central portion of the inductor component 1 is a portion that is perpendicular to the first main surface 18, the second main surface 17 and the first side surface 13, the second side surface 14, and includes a portion of the internal magnetic path portion 24 of the first and second inductor wirings 21, 22.

[0086] Preferably, at least one first metal magnetic powder 73 is in contact with at least one first iron oxide magnetic powder 74 and at least one void 71. Even if the first metal magnetic powder 73 expands due to stress such as heat, causing stress, the contact between the first metal magnetic powder 73 and the void 71 can alleviate the stress in the void 71. Furthermore, since the linear expansion coefficients of the first iron oxide magnetic powder 74 and the first metal magnetic powder 73 are different, a difference in linear expansion coefficient occurs between the first iron oxide magnetic powder 74 and the first metal magnetic powder 73. However, the contact between the void 71 and the first metal magnetic powder 73 allows the void 71 to absorb the difference in linear expansion coefficient, thereby more effectively alleviating stress. Furthermore, since the resistance of the first iron oxide magnetic powder 74 is greater than the resistance of the first metal magnetic powder 73, when the first iron oxide magnetic powder 74 and the first metal magnetic powder 73 come into contact with each other, the first iron oxide magnetic powder 74 ensures insulation between the first metal magnetic powder 73, thereby suppressing iron loss.

[0087] (Modifications) Fig. 4 is an explanatory diagram of a first modification of the inductor component 1 according to the first embodiment. Fig. 5 is a partial enlarged view of the first modification of the inductor component 1 according to the first embodiment. As shown in Fig. 4, in this modification, the inductor component includes an element body 10 (magnetic layer 11), a first inductor wiring 21 disposed on the element body 10, and an insulating layer 31 in contact with the surface of the first inductor wiring 21 on the second main surface 17 side. As shown in Fig. 5, in this modification, the inductor component includes an element body 10 (magnetic layer 11) and a first vertical wiring 81. Note that the illustrations are simplified and may not reflect actual dimensions and proportions.

[0088] 4 and 5 , in the magnetic layer 11, at least one first metal magnetic powder 73 is in contact with the first inductor wiring 21, at least one void 71, and at least one first iron oxide magnetic powder 74. This configuration allows for a higher packing factor, resulting in an inductor component 1 with excellent inductance efficiency. As shown in FIG. 5 , in the magnetic layer 11, at least one first metal magnetic powder 73 may be in contact with the first vertical wiring 81, at least one void 71, and at least one first iron oxide magnetic powder 74. While the first inductor wiring 21 and the first vertical wiring 81 are shown in this modification, the second inductor wiring 22, the third inductor wiring 23, or the second vertical wiring 82 may be in contact.

[0089] In this modification, preferably, at least one first metal magnetic powder 73 contacts the first inductor wiring 21, at least one void 71, and at least one first iron oxide magnetic powder 74. With the above configuration, it is possible to increase the filling factor and obtain an inductor component 1 with good inductance efficiency. In this embodiment, the first inductor wiring 21 may also be in contact with the magnetic layer 11, which also improves the inductance efficiency of the inductor component 1.

[0090] Preferably, the first metal magnetic powder 73 contains 95% by mass or more of Fe. A high Fe content can improve DC bias characteristics. The upper limit of the Fe content in the first metal magnetic powder 73 is not particularly limited, but is, for example, 99% by mass or less. In the present disclosure, the element content in the first metal magnetic powder 73 is a value obtained by measuring the center of the first metal magnetic powder 73 using energy dispersive X-ray spectroscopy (also referred to as "EDX"). The element content can be obtained, for example, by measuring the element content at four points and calculating the average value. Note that the "center" includes not only the exact center but also approximately the center.

[0091] Preferably, the first metal magnetic powder 73 contains 1% by mass or more and 5% by mass or less of Cu. By containing Cu in this amount, it is possible to reduce the influence of the demagnetizing field within the first metal magnetic powder 73. Furthermore, by containing Cu in this amount, it is possible to reduce the hardness of the first metal magnetic powder 73 compared to when it contains only Fe.

[0092] Preferably, the first iron oxide magnetic powder 74 contains 50% by mass or more of Fe. The upper limit of the Fe content in the first iron oxide magnetic powder 74 is not particularly limited, but may be, for example, 85% by mass or less, or 70% by mass or less. By setting the Fe content in the first iron oxide magnetic powder 74 to a predetermined level or less, the electrical conductivity is lowered and eddy currents between the magnetic powder particles are reduced, thereby suppressing iron loss. By setting the Fe content to a predetermined level or more, the DC bias characteristics are improved.

[0093] The first iron oxide magnetic powder 74 may contain carbon (C), oxygen (O), copper (Cu), zirconium (Zr), aluminum (Al), etc. in addition to Fe. For example, the first iron oxide magnetic powder 74 may contain 19% by mass or more and 25% by mass or less of C. The first iron oxide magnetic powder 74 may contain 5% by mass or more and 17% by mass or less of O. The first iron oxide magnetic powder 74 may contain 2.2% by mass or more and 2.5% by mass or less of Cu. The first iron oxide magnetic powder 74 may contain 1.5% by mass or more and 1.7% by mass or less of Zr. The first iron oxide magnetic powder 74 may contain 1.2% by mass or less of Al. The element contents of the first iron oxide magnetic powder 74 are values ​​obtained by measuring the center of the first iron oxide magnetic powder 74 using EDX, similar to the first metal magnetic powder 73. Note that the first iron oxide magnetic powder 74 does not have to contain C, O, Cu, Zr, or Al.

[0094] Preferably, the average particle diameter of the first metal magnetic powder 73 is 0.5 μm or more and 2.5 μm or less, and the average particle diameter of the first iron oxide magnetic powder 74 is 0.01 μm or more and 0.5 μm or less, with the average particle diameter of the first metal magnetic powder 73 being at least five times the average particle diameter of the first iron oxide magnetic powder 74. By micronizing the magnetic material 70, particularly the first iron oxide magnetic powder 74, it is possible to suppress iron loss, and the inductor component 1 can also be used in power inductors that perform high-speed switching operations at high frequencies, specifically, 50 MHz to 100 MHz. Furthermore, because the average particle diameter of the first iron oxide magnetic powder 74 is smaller than the average particle diameter of the first metal magnetic powder 73, a ball bearing effect is generated, allowing the particles of the first metal magnetic powder 73 to move over the particles of the first iron oxide magnetic powder 74, thereby improving the filling rate of the magnetic material 70.

[0095] Preferably, in the magnetic layer 11, the filling rate of the first metal magnetic powder 73 is greater than the filling rate of the first iron oxide magnetic powder 74. With the above configuration, it is possible to provide an inductor component 1 with excellent DC bias characteristics. Note that the "filling rate of the first metal magnetic powder 73" refers to the area proportion of the first metal magnetic powder 73 in any cross section perpendicular to the first side surface 13 and second side surface 14 and the first main surface 18 and second main surface 17 of the magnetic layer 11. The "filling rate of the first iron oxide magnetic powder 74" refers to the area proportion of the first iron oxide magnetic powder 74 in any cross section perpendicular to the first side surface 13 and second side surface 14 and the first main surface 18 and second main surface 17 of the magnetic layer 11.

[0096] Preferably, the first metal magnetic powder 73 includes an insulating coating portion, and at least one of the insulating coating portions is in contact with at least one of the first iron oxide magnetic powder particles 74. By including the insulating coating in the first metal magnetic powder 73, contact between metals can be reduced, and iron loss in the magnetic layer 11 can be reduced.

[0097] For example, the first iron oxide magnetic powder 74 contains iron (Fe) and oxygen (O), with the Fe content being 60% by mass or more and 85% by mass or less, the O content being the second highest after the Fe content, and the electrical conductivity of the first metal magnetic powder 73 may be 10 times or more higher than the electrical conductivity of the first iron oxide magnetic powder 74. If the Fe content in the first iron oxide magnetic powder 74 is too high, the electrical conductivity increases, and eddy currents between the magnetic powder particles become large, resulting in increased iron loss. If the Fe content is too low, the DC bias characteristics deteriorate. On the other hand, iron loss can be suppressed by keeping the Fe content within the above range and increasing the O content second highest after the Fe content. The electrical conductivity of the first metal magnetic powder 73 is 10 times higher than the electrical conductivity of the first iron oxide magnetic powder 74. ７ The first iron oxide magnetic powder 74 may contain atoms other than O in addition to Fe.

[0098] Preferably, the linear expansion coefficient of the first metal magnetic powder 73 is larger than the linear expansion coefficient of the first iron oxide magnetic powder 74. If the stress of the first metal magnetic powder 73 is large, distortion occurs, so by adding the first iron oxide magnetic powder 74, which has a small linear expansion coefficient, the internal stress of the inductor component 1 can be alleviated.

[0099] Preferably, the circularity of the first metal magnetic powder 73 and the first iron oxide magnetic powder 74 is greater than 0.9. With the above configuration, the magnetic powder particles slide against each other due to the ball bearing effect, further improving the packing rate. The circularity is calculated by 4π × (area) / (perimeter) ２ The area and perimeter are measured using image processing software such as WinROOF2018 (manufactured by Mitani Shoji Co., Ltd.). Specifically, the circularity is determined for each of 10 or more aggregation portions in any cross section, and the average value is taken as the circularity.

[0100] The magnetic layer 11 may further contain a second metal magnetic powder. This configuration makes it possible to adjust the characteristics of the inductor component 1. By changing the compounding ratio of the first metal magnetic powder 73 and the second metal magnetic powder, it is possible to change the balance between the effective magnetic permeability and the DC bias characteristics.

[0101] Preferably, the first metal magnetic powder 73 is a carbonyl iron-based magnetic powder, and the second metal magnetic powder is an amorphous alloy-based magnetic powder, with the average particle size of the second metal magnetic powder being larger than that of the first metal magnetic powder 73. For example, by including an easily oxidizable material such as chromium (Cr), the resistance of the amorphous alloy-based resin powder serving as the second metal magnetic powder can be increased. As a result, even if the average particle size of the amorphous alloy-based resin powder is large, eddy current loss can be suppressed and magnetic permeability can be increased. Furthermore, by using the carbonyl iron-based resin powder serving as the first metal magnetic powder 73 together with the amorphous alloy-based resin powder, the packing rate can be improved and the magnetic permeability can be increased. By using the first iron oxide magnetic powder 74 together with the first metal magnetic powder 73 and the second metal magnetic powder, the particles of the first metal magnetic powder 73 and the second metal magnetic powder move over the particles of the first iron oxide magnetic powder 74 due to the ball bearing effect, thereby further increasing the packing rate.

[0102] (Example) An SEM image of the inductor component 1 is shown in Figure 3A. The measuring device was an energy dispersive X-ray spectroscopy (SEM-EDX) (MT3300-EX, manufactured by Bell Microtrac) at a magnification of 5,000 times. In this example, epoxy resin was used as the resin 72, carbonyl iron was used as the first metal magnetic powder 73, and magnetite (Fe ３ O ４ ) were used. As shown in Fig. 3A, the magnetic layer 11 includes a resin 72, a first metal magnetic powder 73, a first iron oxide magnetic powder 74, and voids 71, and it was found that the first metal magnetic powder 73, the first iron oxide magnetic powder 74, and the voids 71 ​​are in contact with each other. Fig. 3B is a schematic diagram illustrating the first metal magnetic powder 73 and the first iron oxide magnetic powder 74 of Fig. 3A.

[0103] Table 1 shows the results of elemental analysis of the first metal magnetic powder 73, and Table 2 shows the results of elemental analysis of the first iron oxide magnetic powder 74. From Table 1, it was found that the first metal magnetic powder 73 contains 95% by mass or more of Fe and 1% by mass or more and 5% by mass or less of Cu. The elemental analyses in Tables 1 and 2 are values ​​measured using SEM-EDX.

[0104]

[0105]

[0106] It should be noted that Table 2 lists only the major elements. Therefore, there are spectra in which the total amount does not add up to 100%. Furthermore, because the particle size of the first iron oxide magnetic powder 74 is smaller than the resolution of SEM-EDX, the C and O contents in Table 2 may appear higher than in the original composition due to the influence of the resin 72 surrounding the first iron oxide magnetic powder 74. For this reason, to obtain more accurate elemental analysis values ​​for the first iron oxide magnetic powder 74, it is preferable to measure the first iron oxide magnetic powder 74 before mixing using SEM-EDX.

[0107] With the above configuration, the Q value was excellent, at 20 or more at 100 MHz.

[0108] (Manufacturing Method) Figures 6A to 6M are cross-sectional views taken along the line VI-VI showing the manufacturing process of the inductor component 1. Figures 7A to 7F are cross-sectional views taken along the line VII-VII showing the manufacturing process of the inductor component 1. The manufacturing method of the inductor component 1 will be described with reference to Figures 6A to 6M and Figures 7A to 7F.

[0109] As shown in Figure 6A, a dummy core substrate 100 is prepared. In this embodiment, the dummy core substrate 100 is a glass epoxy substrate. Since the thickness of the dummy core substrate 100 does not affect the thickness of the inductor component, it is sufficient to use a substrate of a thickness and material that is generally easy to handle for reasons such as warping during processing.

[0110] As shown in FIGS. 6B to 6E, a first layer having a first inductor wiring 21 is formed.

[0111] First, as shown in FIG. 6B , an insulating material is laminated on the first main surface 100a of the dummy core substrate 100 using a vacuum laminator, patterned by photolithography, and then cured. As a result, in the YZ cross section of FIG. 6B , the first opening 101, the first insulating portion 111a, the first opening 101, the second insulating portion 111b, and the first opening 101 are formed in this order from the right (the second side surface 14 side of the inductor component 1) to the left (the first side surface 13 side of the inductor component 1). The width of the first insulating portion 111a is approximately twice the width of the second insulating portion 111b. The insulating layer may be formed using a press machine instead of a vacuum laminator. The first insulating portion and the second insulating portion 111b form the first insulating layer 111.

[0112] Next, as shown in FIG. 6C , a first seed layer 112 is formed on the first insulating layer 111. Specifically, a seed layer is formed in a spiral shape by sputtering on the surface of the first insulating layer 111 opposite the dummy core substrate 100. Resist is provided on the surface of the seed layer opposite the first insulating layer 111, seed etching is performed by photolithography, and the resist is then removed. This forms the first seed layer 112. Note that the width of the first seed layer 112 is smaller than the width of the first insulating layer 111. The first seed layer 112 is a titanium (Ti) / copper (Cu) laminate, and has titanium on the first insulating layer 111.

[0113] Furthermore, when viewed from the first main surface 100a side, an insulating portion is laminated so as to cover the first insulating layer 111 and the first seed layer 112, and is patterned by photolithography. As a result, as shown in Fig. 6D, a first insulating portion 311 is provided on the first insulating layer 111, and a second opening 102 is provided in a region surrounded by the first insulating portion 311.

[0114] Thereafter, power is supplied through the first seed layer 112, and a first plating portion is deposited on the first seed layer 112 using an electrolytic plating method. As a result, the first inductor wiring 21 is formed on the first seed layer 112, as shown in Fig. 6E. Note that, since no seed layer is provided in the first opening 101, no plating portion is formed in the first opening 101.

[0115] In this manner, a first layer is formed including the first inductor wiring 21. Subsequently, as shown in Figures 6F and 7A, and Figures 6G and 7B, a second layer having the second inductor wiring 22 and the third inductor wiring 23 is formed on the first layer.

[0116] First, a first layer is laminated with an insulating material, patterned by photolithography, and then cured. As a result, a second insulating layer 121 is provided on the first layer, as shown in FIGS. 6F and 7A. Furthermore, as shown in FIG. 7A, a first via opening 151 is provided in the second insulating layer 121, exposing at least a portion of the outer peripheral end 21b of the first inductor wiring 21. Although not shown, a second via opening is provided in the second insulating layer 121, exposing at least a portion of the inner peripheral end 21a of the first inductor wiring 21. The second insulating layer 121 includes a first insulating portion 121a on the right side, a second insulating portion 121b on the left side, as shown in FIG. 6F, and a third insulating portion 121c as shown in FIG. 7A. The width of the first insulating portion 121a is approximately twice the width of the second insulating portion 121b.

[0117] 6G and 7B, a second seed layer 122 is formed on the surface of the second insulating layer 121 opposite to the first inductor wiring 21 using a method similar to that used for the first seed layer 112. Specifically, as shown in FIG. 6G, a first seed portion 122a and a second seed portion 122b are provided on the first insulating portion 121a. A third seed portion 122c is provided on the second insulating portion 121b. As shown in FIG. 7B, a fourth seed portion 122d is provided on the third insulating portion 121c. At this time, the second seed layer 122 is also provided in the first via opening 151 and the second via opening. Thereafter, a second insulating portion 312 is formed using a method similar to that used for forming the first insulating portion 311. Thereafter, using electrolytic plating in the same manner as in the method for forming the first inductor wiring 21, second inductor wirings 22, specifically second inductor wirings 221, 222, and 223, are formed on the surfaces of the first to third seed portions 122a to 122c opposite the second insulating layer 121. Similarly, a third inductor wiring 23 is formed on the surface of the fourth seed portion 122d opposite the second insulating layer 121. At this time, a second via wiring 92 is formed in the first via opening 151, and a first via wiring 91 is formed in the second via opening.

[0118] In this manner, the second layer is formed, including the second and third inductor wirings 22 and 23. Subsequently, as shown in Figures 6H, 7C, and 7D, the third layer is formed on the second layer.

[0119] First, an insulating material is laminated to cover the second layer, patterned by photolithography, and then cured. As a result, a third insulating layer 131 is provided on the surface of the second inductor wiring 22 opposite the second seed layer 122, as shown in FIG. 6H, and a fourth insulating layer 141 is provided on the surface of the third inductor wiring 23 opposite the second seed layer 122, as shown in FIG. 7C. Furthermore, as shown in FIG. 7C, a fourth via opening 152 is provided in the fourth insulating layer 141, exposing the second end 23b of the third inductor wiring 23. Although not shown, a third via opening is provided in the fourth insulating layer 141, exposing the outer peripheral end 22b of the second inductor wiring 22.

[0120] 7D , a third seed layer 142 is formed in and around the fourth via opening 152 using a method similar to that for the first seed layer 112. Thereafter, a second vertical wiring 82 is formed on the third seed layer 142 using electrolytic plating, similar to the method for forming the first inductor wiring 21. At this time, the second vertical wiring 82 has a fourth via wiring 94 and a second columnar wiring 52. Although not shown, the third seed layer 142 is formed in and around the third via opening using a method similar to that for the first seed layer 112, and then a first vertical wiring 81 is formed on the third seed layer 142 using electrolytic plating, similar to the method for forming the first inductor wiring 21. Note that in the present disclosure, no insulating portion is provided around the first vertical wiring 81 and the second vertical wiring 82 when the first vertical wiring 81 and the second vertical wiring 82 are formed; however, the first vertical wiring 81 and the second vertical wiring 82 may be formed after providing an insulating portion.

[0121] As described above, the third layer including the first vertical wiring 81 and the second vertical wiring 82 is formed.

[0122] Next, as shown in FIGS. 5, 6I, and 7E, resin 72 and magnetic material 70 are added to form the magnetic layer 11a. At this time, voids 71 ​​are formed in the magnetic layer 11a as described below. Pressure is applied when thermocompression bonding the magnetic material 70. If this pressure application is started before the melt viscosity of the magnetic material 70 has completely decreased, the flow of the magnetic material 70 decreases, and the magnetic material 70 is filled in a state containing air. The magnetic material 70 is then heated, and when the melt viscosity of the magnetic material 70 further decreases, the magnetic material 70 is sufficiently filled and begins to harden in a state containing the air. This allows the voids 71 ​​to be formed. The voids 71 ​​may also be formed using other methods. For example, a low-molecular-weight additive may be added to the magnetic material 70, and the additive may be decomposed during hardening of the magnetic material 70, forming the voids 71 ​​in the areas where the additive was present. The above two methods may also be combined, or other methods may be used to form the voids 71. Furthermore, if the top surfaces of the first vertical wiring 81 and the second vertical wiring 82 are not exposed, the magnetic material 70 is removed by polishing so as to expose them.

[0123] 6J and 7F , a coating film 50 is provided on the upper surface (second main surface). Through holes are formed in the coating film 50 in areas where external terminals are to be formed, exposing the end faces of the first vertical wiring 81 and the second vertical wiring 82. Thereafter, a first external terminal 41 is provided to connect to the first vertical wiring 81, and a second external terminal 42 is provided to connect to the second vertical wiring 82.

[0124] Thereafter, the dummy core substrate 100 is removed by cutting. Resin 72 and magnetic material 70 are added to the surface that was in contact with the dummy core substrate 100, and the surface is pressed to form magnetic layer 11b, as shown in FIG. 6K. Compositions other than resin 72 and magnetic material 70 may also be used. The magnetic layers 11a and 11b form the magnetic layer 11.

[0125] The portions that will become the multiple inductor components formed in a matrix are separated into individual inductor components along lines D as shown in Fig. 6L. This forms inductor components 1 as shown in Fig. 6M.

[0126] Second Embodiment The configuration of an inductor component of a second embodiment is shown in Figures 1 and 2, similar to the configuration of the inductor component 1 of the first embodiment. Note that configurations other than those described below are the same as those of the first embodiment, and therefore descriptions thereof will be omitted.

[0127] The second embodiment differs from the first embodiment in the magnetic material and the first metal magnetic powder contained in the magnetic material. This difference will be described below. The other components are the same as those in the first embodiment, and the same reference numerals as those in the first embodiment are used, and the description thereof will be omitted.

[0128] In the second embodiment, the first metal magnetic powder contains Fe and two metals other than Fe. The first metal magnetic powder contains 80% by mass to 90% by mass of Fe. Because the first metal magnetic powder is an alloy containing Fe and two metals other than Fe, magnetic saturation is more likely to occur than when carbonyl iron-based magnetic powder is used.

[0129] The metal other than Fe may be any common metal, such as chromium (Cr), copper (Cu), zirconium (Zr), aluminum (Al), titanium (Ti), and silicon (Si). In the present disclosure, Si is treated as a type of metal for convenience, in accordance with common practice.

[0130] Preferably, the two elements other than Fe are Si and Cr. Specifically, FeSiCr can be used as the first metal magnetic powder. When the first metal magnetic powder contains Si and Cr, the crystals of the first metal magnetic powder are distorted, resulting in a higher magnetic permeability of the magnetic layer 11 than when a carbonyl iron-based magnetic powder is used. In particular, by including Si, the crystals of the first metal magnetic powder are distorted, thereby increasing the magnetic permeability of the magnetic layer 11 compared to when only Fe is included. Since Cr is easily oxidized, the presence of Cr on the surface of the first metal magnetic powder oxidizes the Cr on the surface, preventing oxidation from reaching the interior of the first metal magnetic powder. As described above, when the first metal magnetic powder contains Si and Cr, a balance between magnetic saturation and the magnetic permeability of the magnetic layer 11 can be achieved, increasing the magnetic permeability of the magnetic layer 11 and improving the reliability of the inductor component.

[0131] Preferably, the total content of Si and Cr is 10% by mass or less relative to the first metal magnetic powder, and the Si content is greater than the Cr content. The lower limit of the total content of Si and Cr is not particularly limited, but is, for example, 1% by mass or more. If the Cr content becomes too high, the magnetic properties will deteriorate. For this reason, a relatively low Cr content can achieve high inductance efficiency.

[0132] Third Embodiment In the third embodiment, in addition to the first embodiment, the magnetic layer 11 includes an aggregation portion 75. In the third embodiment, the shapes of the first and second inductor wirings 21B and 22B and the shape of the insulating layer 31B are different from those in the first embodiment. Furthermore, in the third embodiment, the third inductor wiring 23 does not exist. The configuration other than the above is the same as that of the first embodiment, and a description thereof will be omitted.

[0133] Fig. 8 is an explanatory diagram illustrating a part of the magnetic layer of the third embodiment, and Fig. 9 is an enlarged view of a part of the magnetic layer of the third embodiment.

[0134] As shown in FIGS. 8 and 9 , in the third embodiment, the magnetic layer 11B further includes an aggregation portion 75. The aggregation portion 75 is a portion where a plurality of second iron oxide magnetic powder particles aggregate. The average particle diameter of the aggregation portion 75 is at least twice the average particle diameter of the first metal magnetic powder 73. The composition of the second iron oxide magnetic powder is the same as that of the first iron oxide magnetic powder 74. In FIG. 9 , the first metal magnetic powder 73 is carbonyl iron, and the first iron oxide magnetic powder 74 and the second iron oxide magnetic powder are magnetite. The inclusion of the aggregation portion 75 causes the second iron oxide magnetic powder (i.e., the first iron oxide magnetic powder 74) to aggregate, allowing for the addition of a magnetic material other than the first iron oxide magnetic powder 74, i.e., the first metal magnetic powder 73. As a result, the DC bias characteristics of the inductor component 1B can be improved. Here, the average particle diameter of the aggregation portion 75 is measured using the same method as for the first metal magnetic powder 73. The composition of the second iron oxide magnetic powder may be different from the composition of the first iron oxide magnetic powder 74. The first metal magnetic powder 73 may be the first metal magnetic powder in the second embodiment.

[0135] The average particle diameter of the agglomeration portions 75 is not particularly limited, but may be, for example, less than 50 times or less than 40 times the average particle diameter of the first metal magnetic powder 73. If the average particle diameter of the agglomeration portions 75 becomes too large, the first iron oxide magnetic powder 74 will no longer exist between the first metal magnetic powder particles 73, resulting in a decrease in insulation between the first metal magnetic powder particles 73 and an increase in loss tan δ of the magnetic material.

[0136] Preferably, the aggregation portion 75 is formed within the magnetic layer 1 μm ２ There is no particular restriction on the lower limit of the agglomeration portion 75, but for example, ２ 10 per －５ If a large number of agglomeration portions 75 are present, the insulation between the first metal magnetic powder particles 73 decreases, and the loss tan δ of the magnetic material increases.

[0137] Preferably, the concentration portion 75 is not formed in the inner magnetic path portion 24. That is, the concentration portion 75 is formed in at least one of the outer magnetic path portion 25, the first magnetic portion 26a, the third magnetic portion 26c, the fifth magnetic portion 26e, and the sixth magnetic portion 26f. More preferably, the concentration portion 75 is formed in at least one of the first magnetic portion 26a, the third magnetic portion 26c, and the fourth magnetic portion 26d. With the above configuration, the efficiency of obtaining inductance is increased.

[0138] (Manufacturing Method) A manufacturing method for the inductor component 1B will be described.

[0139] As shown in Figure 10A, a dummy core substrate 100B is prepared. Both sides of the dummy core substrate 100B have copper foil. In this embodiment, the dummy core substrate 100B is a glass epoxy substrate. The thickness of the dummy core substrate 100B does not affect the thickness of the inductor array component, so it is sufficient to use a thickness and material that is easy to handle for reasons such as warping during processing.

[0140] Next, the copper foil 110B is adhered to the surface of the substrate copper foil. The copper foil 110B is adhered to the smooth surface of the substrate copper foil. This weakens the adhesive strength between the copper foil 110B and the substrate copper foil, allowing the dummy core substrate 100B to be easily peeled off from the copper foil 110B in a subsequent process. Preferably, the adhesive used to bond the dummy core substrate 100B to the dummy metal layer (copper foil 110B) is a low-tack adhesive. Furthermore, in order to weaken the adhesive strength between the dummy core substrate 100B and the copper foil 110B, it is desirable to make the adhesive surfaces of the dummy core substrate 100B and the copper foil 110B glossy.

[0141] Thereafter, the insulating layer 301B is laminated on the copper foil 110B, and the insulating layer 301B is thermocompressed and thermally cured using a vacuum laminator or a press.

[0142] As shown in FIG. 10B, an opening 102B is formed in the insulating layer 301B by laser processing or the like. Then, as shown in FIG. 10C, dummy copper 113B and inductor wiring 21B are formed on the insulating layer 301B. Specifically, a power supply film (not shown) for the SAP is formed on the insulating layer 301B by electroless plating, sputtering, vapor deposition, or the like. After the power supply film is formed, a photosensitive resist is applied or attached to the power supply film, and openings in the photosensitive resist are formed in the wiring pattern by photolithography. Then, metal wiring corresponding to the dummy copper 113B and inductor wiring 21B is formed in the openings in the photosensitive resist layer. After the metal wiring is formed, the photosensitive resist is peeled and removed with a chemical solution, and the power supply film is etched and removed. Subsequently, additional copper electroplating is performed using this metal wiring as a power supply, thereby obtaining wiring in a narrow space. Furthermore, the opening 102B formed by the SAP in FIG. 10B is filled with copper.

[0143] 10D, the dummy copper 113B and the inductor wiring 21B are covered with an insulating layer 311B. The insulating layer 311B is thermocompressed and thermally hardened using a vacuum laminator or a press.

[0144] Next, as shown in Fig. 10E, openings 122B and 123B are formed in insulating layer 311B by laser processing or the like. As shown in Fig. 10F, dummy copper 124B and inductor wiring 22B are formed on insulating layer 311B by the same method as for dummy copper 113B and inductor wiring 21B. Then, as shown in Fig. 10G, dummy copper 124B and inductor wiring 22B are covered with insulating layer 321B. Next, as shown in Fig. 10H, opening 132B is formed in insulating layer 321B by laser processing or the like.

[0145] Thereafter, the dummy core substrate 100B is peeled off from the copper foil 110B. Then, the copper foil 110B is removed by etching or the like, and the dummy copper 113B and the dummy copper 124B are removed by etching or the like to form a hole 141B corresponding to the inner magnetic path and a hole 142B corresponding to the outer magnetic path, as shown in FIG.

[0146] Thereafter, as shown in Fig. 10J, an insulating layer opening 322B is formed by laser processing or the like. Then, as shown in Fig. 10K, the insulating layer opening 322B is filled with copper using SAP, and vertical wiring 81B is formed on insulating layer 301B and insulating layer 321B. Note that insulating layers 301B, 311B, and 321B form insulating layer 31B.

[0147] 10L, the inductor wiring, insulating layer, and vertical wiring are covered with a magnetic layer 11B to form an inductor substrate. The magnetic layer 11B is thermocompressed and thermally cured using a vacuum laminator or a press. At this time, the magnetic layer 11B also fills the holes 141B and 142B.

[0148] 10M, the upper and lower magnetic layers 11B of the inductor substrate are thinned by a grinding process. At this time, a portion of the vertical wiring 81B is exposed, and thus an exposed portion of the vertical wiring 81B is formed on the same plane as the magnetic layer 11B. At this time, by grinding the magnetic layer 11B to a thickness sufficient to obtain the desired inductance value, the inductor component can be thinned.

[0149] Then, as shown in FIG. 10N, an insulating resin (coating film) 50B is formed on the surface of the magnetic material by a printing method. Here, openings 501B are formed in the insulating resin 50B as the external terminal formation portions. While printing is used in this embodiment, the openings 501B may also be formed by photolithography. Then, electroless copper plating or plating films of Ni and Au, etc., are applied to the openings 501B to form the external terminals 51B. Next, as shown in FIG. 10O, the inductor component 1B is obtained by dicing along lines D. Although not shown in FIGS. 10C to 10H, inductor substrates are formed on both sides of the dummy core substrate 100B. This allows for high productivity. The inductor substrates can be formed on either one or both sides.

[0150] The present disclosure is not limited to the above-described embodiments, and design modifications are possible within the scope of the present disclosure. For example, various combinations of the features of the first to third embodiments may be used. Furthermore, the number of inductor wiring layers may be increased or decreased, and the number of via wiring layers may be increased or decreased. The manufacturing method for the inductor component is not particularly limited. For example, the manufacturing method for the third embodiment may be used to manufacture the inductor component of the first embodiment, and the manufacturing method for the third embodiment may be used to manufacture the inductor component of the first and second embodiments.

[0151] This application claims priority based on Japanese Patent Application No. 2023-168486, filed on September 28, 2023, the entire contents of which are incorporated herein by reference.

[0152] The present disclosure includes the following aspects. <1> A coil component comprising: an element body including a magnetic layer; and a first coil wiring arranged within the element body, wherein the magnetic layer includes a resin, a first metal magnetic powder, a first iron oxide magnetic powder, and a void, and wherein the average particle diameter of the first metal magnetic powder is larger than the average particle diameter of the first iron oxide magnetic powder. <2> The coil component according to <1>, wherein at least one first metal magnetic powder and at least one first iron oxide magnetic powder are in contact. <3> The coil component according to <2>, wherein the at least one first metal magnetic powder is in contact with at least one first iron oxide magnetic powder and at least one void. <4> The coil component according to <2> or <3>, further including a first vertical wiring extending from a first end side of the first coil wiring so as to expose the inside of the element body at a first main surface of the element body, and the at least one first metal magnetic powder contacts at least one of the first vertical wiring and the first coil wiring, at least one of the voids, and at least one of the first iron oxide magnetic powders. <5> The coil component according to <4>, wherein the at least one first metal magnetic powder contacts the first vertical wiring, at least one of the voids, and at least one of the first iron oxide magnetic powders. <6> The coil component according to any one of <1> to <5>, wherein the first metal magnetic powder contains 95 mass% or more of Fe. <7> The coil component according to any one of <1> to <6>, wherein the first metal magnetic powder contains 1 mass% or more and 5 mass% or less of Cu. <8> The coil component according to any one of <1> to <5>, wherein the first metal magnetic powder contains Fe and two kinds of metals other than Fe, and the Fe is contained in an amount of 80 mass% to 90 mass% of the first metal magnetic powder. <9> The coil component according to <8>, wherein the two kinds are Si and Cr. <10> The coil component according to any one of <8> or <9>, wherein the total content of the two kinds is 10 mass% or less of the first metal magnetic powder, and the Si content is higher than the Cr content.<11> The coil component according to any one of <1> to <10>, wherein the average particle diameter of the first metal magnetic powder is 0.5 μm or more and 2.5 μm or less, the average particle diameter of the first iron oxide magnetic powder is 0.01 μm or more and 0.5 μm or less, and the average particle diameter of the first metal magnetic powder is five times or more the average particle diameter of the first iron oxide magnetic powder. <12> The coil component according to any one of <1> to <11>, wherein in the magnetic layer, the packing rate of the first metal magnetic powder is greater than the packing rate of the first iron oxide magnetic powder. <13> The coil component according to any one of <1> to <12>, wherein the first metal magnetic powder includes an insulating coating portion, and at least one insulating coating portion and at least one first iron oxide magnetic powder are in contact with each other. <14> The coil component according to any one of <1> to <13>, wherein the first iron oxide magnetic powder contains Fe and O, the Fe content is 60% by mass or more and 85% by mass or less, the O content is the second highest after the Fe content, and the electrical conductivity of the first metal magnetic powder is 10 times or more higher than the electrical conductivity of the first iron oxide magnetic powder. <15> The coil component according to any one of <1> to <14>, wherein the first metal magnetic powder has a higher linear expansion coefficient than the first iron oxide magnetic powder. <16> The coil component according to any one of <1> to <15>, wherein the magnetic layer further includes aggregation portions, the aggregation portions being portions where the second iron oxide magnetic powder is aggregated, the average particle diameter of the aggregation portions being at least twice the average particle diameter of the first metal magnetic powder, and the second iron oxide magnetic powder having the same composition as the first iron oxide magnetic powder. <17> The coil component according to any one of <1> to <16>, wherein the circularity of the first metal magnetic powder and the first iron oxide magnetic powder is greater than 0.9. <18> The coil component according to any one of <1> to <17>, wherein the magnetic layer further includes a second metal magnetic powder. <19> The coil component according to <18>, wherein the first metal magnetic powder is a carbonyl iron-based magnetic powder, the second metal magnetic powder is an amorphous alloy-based magnetic powder, and the second metal magnetic powder has an average particle size greater than the average particle size of the first metal magnetic powder.<20> A surface-mount electronic component comprising the coil component according to any one of <1> to <19>. <21> A semiconductor component comprising the coil component according to any one of <1> to <19>. <22> A substrate comprising the coil component according to any one of <1> to <19>.

[0153] DESCRIPTION OF SYMBOLS 1, 1B Inductor component 10 Body 11, 11a, 11b, 11B Magnetic layer 13 First side surface 14 Second side surface 15 First end surface 16 Second end surface 17 Second main surface (top surface) 18 First main surface (bottom surface) 21, 22, 23, 221, 222, 223, 21B, 22B Inductor wiring 21a, 22a Inner peripheral end 21b, 22b Outer peripheral end 21c to 21g, 22c to 22k Inductor wiring portion 23a First end 23b Second end 24 Inner magnetic path portion 25 Outer magnetic path portion 26a to 26f Magnetic portion 31, 32, 111, 121, 131, 141, 31B, 301B, 311B, 321B Insulating layer DESCRIPTION OF SYMBOLS 41, 42, 51B External terminal 50 Coating film 51, 52 Pillar wiring 70 Magnetic material 71 Void portion 72 Resin 73 First metal magnetic powder 74 First iron oxide magnetic powder 75 Aggregation portion 81, 82, 81B Vertical wiring 91, 92, 93, 94 Via wiring 100, 100B Dummy core substrate 100a First main surface of dummy core substrate 101, 102, 151, 152, 102B, 122B, 123B, 132B, 501B Opening 110B Copper foil 111a, 111b, 121a to 121c Insulating portion 111, 121 Insulating layer 112, 122, 142 Seed layer 113B, 124B Dummy copper 122a, 122b, 122c, 122d seed portions 141B, 142B hole portions 301B, 311B, 321B insulating layers 311, 312 insulating portions 322B insulating layer openings D lines L11, L12, L21 to L23 length dimensions W11 to W13, W21 to W24 width dimensions

Claims

1. A coil component comprising: an element including a magnetic layer; and first coil wiring disposed within the element; the magnetic layer includes a resin, a first metal magnetic powder, a first iron oxide magnetic powder, and a void portion; and the average particle diameter of the first metal magnetic powder is larger than the average particle diameter of the first iron oxide magnetic powder.

2. The coil component according to claim 1, wherein at least one of the first metal magnetic powders and at least one of the first iron oxide magnetic powders are in contact with each other.

3. The coil component according to claim 2, wherein the at least one first metal magnetic powder is in contact with the at least one first iron oxide magnetic powder and the at least one void portion.

4. A coil component as described in claim 2 or 3, further comprising a first vertical wiring extending from a first end side of the first coil wiring so as to expose the inside of the base body to a first main surface of the base body, and the at least one first metal magnetic powder is in contact with at least one of the first vertical wiring and the first coil wiring, at least one of the void portions, and at least one of the first iron oxide magnetic powders.

5. A coil component as described in claim 4, wherein the at least one first metal magnetic powder is in contact with the first vertical wiring, at least one of the voids, and at least one of the first iron oxide magnetic powders.

6. A coil component according to any one of claims 1 to 5, wherein the first metal magnetic powder contains 95 mass % or more of Fe.

7. A coil component according to any one of claims 1 to 6, wherein the first metal magnetic powder contains Cu in an amount of 1 mass % or more and 5 mass % or less.

8. A coil component described in any one of claims 1 to 5, wherein the first metal magnetic powder contains Fe and two types selected from metals other than Fe, and the Fe is contained in an amount of 80 mass% or more and 90 mass% or less of the first metal magnetic powder.

9. The coil component according to claim 8, wherein the two types are Si and Cr.

10. A coil component as described in claim 8 or 9, wherein the total content of the two types is 10 mass% or less with respect to the first metal magnetic powder, and the content of Si is greater than the content of Cr.

11. A coil component described in any one of claims 1 to 10, wherein the average particle diameter of the first metal magnetic powder is 0.5 μm or more and 2.5 μm or less, the average particle diameter of the first iron oxide magnetic powder is 0.01 μm or more and 0.5 μm or less, and the average particle diameter of the first metal magnetic powder is 5 times or more the average particle diameter of the first iron oxide magnetic powder.

12. A coil component according to any one of claims 1 to 11, wherein in the magnetic layer, the filling rate of the first metal magnetic powder is greater than the filling rate of the first iron oxide magnetic powder.

13. A coil component according to any one of claims 1 to 12, wherein the first metal magnetic powder includes an insulating coating portion, and at least one of the insulating coating portions is in contact with at least one of the first iron oxide magnetic powders.

14. A coil component described in any one of claims 1 to 13, wherein the first iron oxide magnetic powder contains Fe and O, the Fe content is 60 mass % or more and 85 mass % or less, the O content is the second highest after the Fe content, and the electrical conductivity of the first metal magnetic powder is 10 times or more higher than the electrical conductivity of the first iron oxide magnetic powder.

15. A coil component according to any one of claims 1 to 14, wherein the linear expansion coefficient of the first metal magnetic powder is greater than the linear expansion coefficient of the first iron oxide magnetic powder.

16. A coil component as described in any one of claims 1 to 15, wherein the magnetic layer further includes an aggregation portion, the aggregation portion being a portion in which the second iron oxide magnetic powder is aggregated, the average particle diameter of the aggregation portion is at least twice the average particle diameter of the first metal magnetic powder, and the composition of the second iron oxide magnetic powder is the same as the composition of the first iron oxide magnetic powder.

17. A coil component according to any one of claims 1 to 16, wherein the circularity of the first metal magnetic powder and the first iron oxide magnetic powder is greater than 0.

9.

18. A coil component according to any one of claims 1 to 17, wherein the magnetic layer further contains a second metal magnetic powder.

19. A coil component as described in claim 18, wherein the first metal magnetic powder is a carbonyl iron-based magnetic powder, the second metal magnetic powder is an amorphous alloy-based magnetic powder, and the average particle diameter of the second metal magnetic powder is larger than the average particle diameter of the first metal magnetic powder.

20. A surface-mount electronic component comprising a coil component according to any one of claims 1 to 19.

21. A semiconductor component comprising a coil component according to any one of claims 1 to 19.

22. A substrate comprising a coil component according to any one of claims 1 to 19.

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