Method for manufacturing resist-pattern-containing laminate, and electroconductive film

Abstract

The present invention addresses the problem of providing: a method for manufacturing a resist-pattern-containing laminate in which bleed-through by a thin metal wire disposed on the surface side of a base material to a resist film that is disposed on the other surface side is suppressed, and with which it is possible to manufacture a resist pattern of a desired shape; and an electroconductive film. A method for manufacturing a resist-pattern-containing laminate according to the present invention comprises: an exposure step for irradiating a laminate having a base material, a first metal pattern that is disposed on one surface side of the base material and is configured from a first thin metal wire, a first resist film that is disposed on the first metal pattern, and a second metal pattern that is disposed on the other surface side of the base material and is configured from a second thin metal wire, with light from the other surface side of the base material to expose the first resist film; and a development step for developing the first resist film to form a first resist pattern and obtain a resist-pattern-containing laminate. The line width w2 of the second thin metal wire and the thickness d of the base material satisfy the relationship of formula (1) (d / w2≥3.0).

Description

Method for producing resist pattern-containing laminate, conductive film

[0001] The present invention relates to a method for producing a resist pattern-containing laminate and a conductive film.

[0002] Flexible substrates (hereinafter also referred to as "conductive films") having conductive thin wires (thin wire-like wiring exhibiting conductivity) are widely used in various applications, such as touch panels, solar cells, and electroluminescence (EL) elements. In particular, in recent years, the number of touch panels installed in mobile phones and portable game devices has increased, and demand for conductive films for capacitive touch panels capable of multi-point detection has rapidly expanded. Various methods have been proposed for manufacturing conductive thin wires. For example, Patent Document 1 discloses a method for manufacturing conductive thin wires using a semi-additive process, which includes the steps of providing a plating resist pattern for a metal wiring pattern on the surface of a first metal layer using a negative photoresist, performing electrolytic plating, peeling off the plating resist pattern, and then removing the first metal layer.

[0003] Japanese Patent Application Laid-Open No. 2007-287953

[0004] The present inventors have studied a new method for manufacturing a resist pattern-containing laminate, with reference to the technology for manufacturing conductive films described in Patent Document 1 and the like, and have found that when a resist film is placed on one surface of a laminate having thin metal wires arranged on both sides of a substrate and an attempt is made to form a pattern on the resist film, show-through of the thin metal wires arranged on the other surface of the substrate occurs on the resist film, making it difficult to form a resist pattern of the desired shape.

[0005] In view of the above circumstances, an object of the present invention is to provide a method for producing a resist pattern-containing laminate that can suppress show-through of thin metal wires arranged on one surface of a substrate onto a resist film arranged on the other surface, thereby producing a resist pattern of a desired shape.

[0006] The present inventors have conducted extensive research to solve the above problems and have completed the present invention. That is, they have found that the above problems can be solved by the following configuration.

[0007] [1] A method for producing a resist pattern-containing laminate, comprising: an exposure step of irradiating a laminate having a substrate, a first metal pattern disposed on one surface of the substrate and composed of first thin metal wires, a first resist film disposed on the first metal pattern, and a second metal pattern disposed on the other surface of the substrate and composed of second thin metal wires, with light from the other surface of the substrate to expose the first resist film; and a development step of developing the first resist film to form a first resist pattern and obtain a resist pattern-containing laminate, wherein a line width w2 of the second thin metal wires and a thickness d of the substrate satisfy the relationship of formula (1) described below. [2] The method for producing a resist pattern-containing laminate according to [1], further comprising, after the developing step, a second resist film forming step of forming a second resist film on the surface side of the base material on which the second metal pattern is arranged, a second exposure step of irradiating the second resist film with light from the one surface side of the base material to expose the second resist film, and a second developing step of developing the second resist film to form a second resist pattern and obtain a resist pattern-containing laminate, wherein the line width w1 of the first fine metal wires and the thickness d of the base material satisfy the relationship of the below-described formula (2). [3] The method for producing a resist pattern-containing laminate according to [2], further comprising a conductive fine wire forming step of forming upper conductive layers on the exposed first fine metal wires and on the exposed second fine metal wires of the resist pattern-containing laminate obtained in the second developing step, [4] The method for producing a resist pattern-containing laminate according to [3], wherein the conductive thin wire forming step is a step of plating the resist pattern-containing laminate obtained in the second developing step. [5] The method for producing a resist pattern-containing laminate according to [4], wherein the plating step is electroless plating. [6] The method for producing a resist pattern-containing laminate according to any one of [1] to [5], wherein the line width w2 of the second thin metal wires is 3.0 μm or less. [7] The method for producing a resist pattern-containing laminate according to any one of [1] to [6], wherein the line width w1 of the first thin metal wires is 3.0 μm or less.[8] The method for producing a resist pattern-containing laminate according to any one of [1] to [7], further comprising a first resist film forming step of forming the first resist film on the surface side of the substrate on which the first metal pattern is arranged, in a precursor laminate having the substrate, the first metal pattern, and the second metal pattern, prior to the exposure step, to obtain the laminate. [9] The method for producing a resist pattern-containing laminate according to [8], wherein the first resist film forming step is a step of transferring the resist film to the surface side of the substrate on which the first metal pattern is arranged, using a dry film resist having a temporary substrate and a resist film.

[10] The method for producing a resist pattern-containing laminate according to any one of [1] to [9], further comprising a first conductive thin wire forming step of forming a metal pattern on the first metal thin wire after the development step, to obtain conductive thin wires.

[11] a substrate; a first conductive thin wire arranged on one surface side of the substrate; a first insulating film arranged on the one surface side of the substrate and arranged in a region where the first conductive thin wire is not arranged; a second conductive thin wire arranged on the other surface side of the substrate; and a second insulating film arranged on the other surface side of the substrate and arranged in a region where the second conductive thin wire is not arranged, wherein a line width v1 of the first conductive thin wire and a thickness d of the substrate satisfy a relationship of formula (X1) described later, and satisfies the relationship of formula (Y1) described below, the line width v2 of the second conductive thin wire and the thickness d of the substrate satisfy the relationship of formula (X2) described below, the height h2 of the second conductive thin wire and the line width v2 of the second conductive thin wire satisfy the relationship of formula (Y2) described below, the metal density of a lower region of the first conductive thin wire on the substrate side is lower than the metal density of an upper region of the first conductive thin wire other than the lower region, and the metal density of a lower region of the second conductive thin wire on the substrate side is lower than the metal density of an upper region of the second conductive thin wire other than the lower region.

[12] The conductive film according to

[11] , wherein the line width v2 of the second conductive thin wire is 3.0 μm or less.

[13] The conductive film according to

[11] or

[12] , wherein the line width v1 of the first conductive thin wire is 3.0 μm or less.

[14] A conductive film comprising a substrate, first conductive thin wires arranged on one surface of the substrate, a first insulating film arranged on the one surface of the substrate in an area where the first conductive thin wires are not arranged, and a second metal pattern arranged on the other surface of the substrate and composed of second metal thin wires, wherein the line width w2 of the second metal pattern and the thickness d of the substrate satisfy the relationship of formula (1) described below, the height h1 of the first conductive thin wires and the line width v1 of the first conductive thin wires satisfy the relationship of formula (Y1) described below, and the metal density of a lower region of the first conductive thin wires on the substrate side is lower than the metal density of an upper region of the first conductive thin wires other than the lower region.

[15] The conductive film according to

[14] , wherein the line width w2 of the second metal pattern is 3.0 μm or less.

[16] The conductive film according to

[14] or

[15] , wherein the line width v1 of the first conductive thin wires is 3.0 μm or less.

[0008] According to the present invention, there can be provided a method for producing a resist pattern-containing laminate, which can suppress show-through of thin metal wires arranged on one surface of a substrate onto a resist film arranged on the other surface, thereby producing a resist pattern of a desired shape. Further, according to the present invention, there can be provided a method for producing a conductive film.

[0009] 1 is a diagram showing an example of the configuration of a laminate used in the manufacturing method of the present invention; FIG. 2 is a diagram showing an example of the configuration of a laminate obtained in the exposure step of the manufacturing method of the present invention; FIG. 3 is a diagram showing an example of the configuration of a resist pattern-containing laminate manufactured by the manufacturing method of the present invention; FIG. 4 is a plan view showing an example of a mesh-shaped metal pattern; FIG. 5 is a diagram showing an example of the configuration of a precursor laminate used in the resist film forming step of the manufacturing method of the present invention; FIG. 6 is a diagram showing another example of the configuration of a resist pattern-containing laminate manufactured by the manufacturing method of the present invention; FIG. 7 is a diagram for explaining a manufacturing method according to a first embodiment of the present invention; FIG. 8 is a diagram for explaining a manufacturing method according to the first embodiment of the present invention; FIG. 9 is a diagram for explaining a manufacturing method according to a second embodiment of the present invention; FIG. 10 is a diagram for explaining a manufacturing method according to the second embodiment of the present invention; FIG. 11 is a diagram for explaining a manufacturing method according to the second embodiment of the present invention; FIG. 12 is a diagram for explaining a manufacturing method according to a third embodiment of the present invention; FIG. 13 is a diagram for explaining a manufacturing method according to the third embodiment of the present invention; FIG. 14 is a diagram for explaining a manufacturing method according to the third embodiment of the present invention;

[0010] The present invention will be described in detail below with reference to the drawings. The following description of the components may be based on a representative embodiment of the present invention, but the present invention is not limited to such an embodiment. Furthermore, the drawings shown below are merely examples for explaining the present invention, and the present invention is not limited by the drawings shown below.

[0011] The following describes the meanings of each description in this specification. In this specification, a numerical range expressed using "to" means a range that includes the numerical values ​​before and after "to" as the lower and upper limits. In this specification, when two or more types of a component are present, the "content" of that component refers to the total content of those two or more components. In this specification, "g" and "mg" represent "mass g" and "mass mg," respectively. In this specification, angles expressed by specific numerical values, and angle-related terms such as "parallel," "perpendicular," and "orthogonal" include the error range generally accepted in the relevant technical field, unless otherwise specified. For example, "orthogonal" or "perpendicular" means a range of 90° ± 5°, and "parallel" means a range of 0° ± 5°. Similarly, for other specific angles, unless otherwise specified, it means that the difference from the exact angle is within 5 degrees. The difference in the above angles is preferably within 4 degrees, and more preferably within 3 degrees.

[0012] As used herein, the term "polymer" or "polymer compound" refers to a compound having a weight-average molecular weight of 2000 or more. Here, the weight-average molecular weight is defined as a polystyrene-equivalent value measured using gel permeation chromatography (GPC) under the following conditions: Apparatus: HLC-8320GPC manufactured by Tosoh Corporation Column: TSK-GEL G3000PWXL manufactured by Tosoh Corporation Column temperature: 35°C Flow rate: 0.5 mL / min Calibration curve: POLY SODIUM ACRYLATE STANDARD manufactured by Sowa Scientific Co., Ltd. Eluent: A solution obtained by diluting a mixture of sodium dihydrogen phosphate dodecahydrate / disodium hydrogen phosphate dihydrate (34.5 g / 46.2 g) with purified water to 5000 g.

[0013] [Method for Producing a Resist Pattern-Containing Laminate] The method for producing a resist pattern-containing laminate of the present invention (hereinafter also referred to as "the present production method") includes the following steps: irradiating a laminate (hereinafter also referred to as "laminate A") having a substrate, a first metal pattern composed of first fine metal wires arranged on one surface of the substrate, a first resist film arranged on the first metal pattern, and a second metal pattern composed of second fine metal wires arranged on the other surface of the substrate with light from the other surface of the substrate to expose the first resist film; and developing the first resist film to form a first resist pattern and obtain a resist pattern-containing laminate. Furthermore, in this production method, the line width w2 of the second fine metal wires and the thickness d of the substrate satisfy the relationship of formula (1): Formula (1) d / w2≧3.0. Each step of this production method is described below.

[0014] <Exposure Step> This manufacturing method includes an exposure step in which the laminate A is irradiated with light from the other surface side of the substrate, i.e., the surface side on which the second metal pattern is disposed, to expose the first resist film. FIG. 1 shows an example of the configuration of the laminate A used in the exposure step of this manufacturing method. The laminate 11 shown in FIG. 1 includes a substrate 20, first metal fine wires 31 disposed on one surface 21 of the substrate 20, a first resist film 40 disposed on the first metal fine wires 31, and second metal fine wires 32 disposed on the other surface 22 of the substrate 20. Here, the first metal fine wires 31 constitute a first metal pattern (not shown), and the second metal fine wires 32 constitute a second metal pattern (not shown). As shown in the figure, in the laminate 11, the first metal fine wires 31 (first metal pattern) and the second metal fine wires 32 (second metal pattern) are disposed so as to face each other across the substrate 20.

[0015] 1 shows two first thin metal wires 31 and one second thin metal wire 32 extending perpendicular to the paper surface, but Fig. 1 shows only a part of the overall configuration of the laminate 11, and the arrangement and number of each thin metal wire in the laminate A are not particularly limited. The arrangement and number of the thin metal wires, upper conductive layer, conductive thin wire, etc. shown in each drawing below are the same as above.

[0016] In the exposure step, light is irradiated onto the entire surface of the substrate 20 from the other surface 22 side of the substrate 20, and the first resist film 40 is exposed using the first metal pattern as a mask. FIG. 2 shows an example of the configuration of a laminate A obtained by the exposure step. In the laminate 12 shown in FIG. 2, the substrate 20, the first thin metal wires 31, and the second thin metal wires 32 are the same as those in the laminate 11 shown in FIG. 1. Meanwhile, the first resist film 40 of the laminate 11 is divided into an exposed portion 41 and an unexposed portion 42 in the laminate 12. By irradiating the first resist film 40 with light from the other surface 22 side of the substrate 20 through the substrate 20, the regions on one surface 21 where the first thin metal wires 31 are not arranged become exposed portions 41, and the regions where the first thin metal wires 31 are arranged become unexposed portions 42. In this way, the first metal pattern formed by the first thin metal wires 31 functions as a mask for the first resist film 40, and exposed portions 41 and unexposed portions 42 having shapes corresponding to the first metal pattern are formed.

[0017] The wavelength of the light used in the exposure step is not particularly limited as long as it can expose the first resist film and can transmit through the substrate. Examples of light and light sources used in the exposure step include g-line (wavelength 436 nm), i-line (365 nm), KrF excimer laser (248 nm), ArF excimer laser (193 nm), and F ２ Examples include an excimer laser (157 nm). When a laser is used as the light source, the exposure may be performed by scanning the laser so that the entire surface of the substrate is irradiated with light. The exposure dose in the exposure step can be adjusted as appropriate, but is preferably 50 to 2000 mJ / cm. ２ is preferred, and 100 to 1000 mJ / cm ２ More preferably, 200 to 500 mJ / cm ２ is more preferred.

[0018] In the exposure step, the first resist film may be heated (pre-baked) before exposure, or may be heated (post-baked) after exposure. The heating conditions can be appropriately adjusted depending on the first resist film used, and examples of the heating conditions include heating at 60 to 150° C. for 10 to 300 seconds.

[0019] The present manufacturing method includes a developing step (first developing step) of developing the exposed first resist film to form a first resist pattern. In the developing step, the first resist film is developed to remove the first resist film arranged in the region corresponding to the first metal pattern, thereby forming a first resist pattern having openings in a shape corresponding to the first metal pattern.

[0020] 3 shows an example of the structure of a resist pattern-containing laminate produced by this production method, which is obtained by developing the first resist film of laminate A in a development process after an exposure process (hereinafter also referred to as "laminate B"). The laminate 13 shown in FIG. 3 has a substrate 20, first metal fine wires 31 arranged on one surface 21 of the substrate 20, a first resist pattern 43 arranged on one surface 21 of the substrate and in an area where the first metal fine wires 31 are not arranged, and a second metal fine wire 32 arranged on the other surface 22 of the substrate 20. In the laminate 13 shown in FIG. 3, the substrate 20, the first metal fine wires 31, and the second metal fine wires 32 are the same as those of the laminate 11 shown in FIG. 1. Meanwhile, the development process removes the unexposed portions 42 of the laminate 12, forming a first resist pattern 43 having a shape that covers only the area where the first metal fine wires 31 are not arranged. Furthermore, openings 44 are formed in the portions of the laminate 12 that were occupied by the unexposed portions 42, that is, in the regions on one surface 21 of the substrate 20 where the first thin metal wires 31 are arranged.

[0021] In this manufacturing method, in the exposure step, light is irradiated from the other surface side of the substrate to expose the first resist film using the first metal pattern as a mask. Therefore, in the development step, the shape of the openings corresponds to the shape of the first metal pattern, and a resist pattern having a desired pattern shape that is self-aligned to the first metal pattern is formed. By performing the conductive thin wire formation step described below on laminate B having such a resist pattern, conductive thin wires having a desired line width that does not exceed the width of the openings can be formed. In addition, since the shape of the conductive thin wires corresponds to the shape of the openings in the resist pattern, by increasing the aspect ratio (ratio of depth to width) of the shape of the openings, conductive thin wires having a narrow line width and excellent conductivity can be more easily formed. Note that, unless otherwise specified, descriptions including the simple notation "conductive thin wires" apply to both first conductive thin wires formed on one surface side of the substrate and second conductive thin wires formed on the other surface side of the substrate, without distinction.

[0022] Furthermore, this manufacturing method can suppress show-through of a resist film disposed on one surface of a substrate due to the thin metal wires disposed on the other surface. In this specification, "show-through" refers to a phenomenon in which, when a resist film disposed on one surface of a substrate is exposed by irradiating light from the other surface of the substrate, film defects such as depressions and holes occur in the exposed resist film in a region of the resist film facing the thin metal wires disposed on the other surface across the substrate. The mechanism by which the present invention can suppress show-through of the thin metal wires on the resist film is not entirely clear, but the inventors speculate as follows. That is, when the thickness d of the substrate does not satisfy the relationship of formula (1) relative to the line width w2 of the second thin metal wires and the thickness d of the substrate is thin, it is believed that when light is irradiated from the other surface of the substrate, the light is blocked by the second thin metal wires, and the region of the first resist film facing the second thin metal wires across the substrate is not sufficiently exposed, resulting in show-through of the first resist film. On the other hand, when the thickness d of the substrate satisfies the relationship of formula (1) with respect to the line width w2 of the second thin metal wires, it is presumed that, when light is irradiated in the same manner, the light passes outside the width direction of the second thin metal wires and is diffracted by the second thin metal wires, and reaches the region of the first resist film corresponding to the second thin metal wires while passing through a substrate having a sufficient thickness d. As a result, it is thought that the region of the first resist film corresponding to the second thin metal wires is also exposed, and show-through due to the second thin metal wires in the first resist film can be suppressed. From the above, it is thought that according to this manufacturing method, show-through of the thin metal wires on the resist film can be suppressed, and a resist pattern-containing laminate having a resist pattern of a desired shape can be manufactured.

[0023] In the developing step, a known developer can be used, and the developer can be selected depending on the type of the first resist film. Examples of the developer include an alkaline developer and an organic solvent developer. Furthermore, in the developing step, rinsing with a rinse liquid may be performed after development. The rinse liquid may be the same as that used in the developing solution, or another rinse liquid may be used. Examples of the other rinse liquid include water (preferably ion-exchanged water or ultrapure water). It is preferable that the first resist pattern formed in the developing step has a rectangular cross section perpendicular to the direction in which the first thin metal wires constituting the first metal pattern extend.

[0024] The components used in this manufacturing method and the steps that this manufacturing method may include will be described in more detail below.

[0025] <Laminate A> The laminate A has at least a substrate, a first metal pattern arranged on one surface of the substrate and composed of a first metal thin wire, a first resist film arranged on the first metal pattern, and a second metal pattern arranged on the other surface of the substrate and composed of a second metal thin wire. The laminate A may include components other than those described above as long as they do not interfere with the exposure process and development process described below and the desired laminate B can be produced. For example, in the laminate 11 shown in FIG. 1, the region on the other surface 22 of the substrate 20 where the second metal thin wires 32 are not arranged is exposed, but the laminate A may have a second resist pattern arranged in the region on the other surface of the substrate where the second metal pattern is not arranged.

[0026] Each member of the laminate A will be described in detail.

[0027] (Substrate) The type of substrate is not particularly limited as long as it is a member that can support each thin metal wire and transmit the exposure light used in the exposure process. Examples of the substrate include plastic substrates and glass substrates, with plastic substrates being preferred. The material of the substrate may be selected according to the wavelength of the exposure light used in the exposure process. The transmittance of the substrate at the wavelength of the exposure light used in the exposure process is preferably 30% or more, more preferably 50% or more, and even more preferably 70% or more. The upper limit is not particularly limited, and may be 100%. The transmittance can be measured using a commercially available spectrophotometer.

[0028] The substrate is preferably flexible in order to provide a conductive film with excellent foldability. A flexible substrate means a substrate that can be bent, specifically, a substrate that does not crack even when bent with a bending curvature radius of 2 mm. A flexible substrate has processability that allows it to be formed into a three-dimensional shape. Examples of flexible substrates include the above-mentioned plastic substrates.

[0029] As materials constituting the substrate, resins with a melting point of approximately 290°C or less are preferred, such as polyethylene terephthalate (PET) (258°C), polycycloolefin (134°C), polycarbonate (250°C), acrylic film (128°C), polyethylene naphthalate (269°C), polyethylene (135°C), polypropylene (163°C), polystyrene (230°C), polyvinyl chloride (180°C), polyvinylidene chloride (212°C), and triacetylcellulose (290°C), with PET, polycycloolefin, or polycarbonate being more preferred. Among these, PET is even more preferred due to its excellent adhesion to each metal pattern. The values ​​in parentheses above are melting points or glass transition temperatures. Polyimide may also be selected as a material constituting the substrate, as long as it transmits the exposure light used in the exposure process. The total light transmittance of the substrate is preferably 85 to 100%. The total light transmittance is measured using "Plastics - Determination of total light transmittance and total light reflectance" as defined in JIS (Japanese Industrial Standards) K 7375:2008.

[0030] The thickness d of the substrate is not particularly limited as long as the line width w2 of the second thin metal wires of the laminate A and the thickness d of the substrate satisfy the relationship of formula (1), but is, for example, more than 10 μm and 300 μm or less. In terms of better bendability of the conductive film, the thickness d is preferably 20 to 200 μm, and more preferably 30 to 150 μm.

[0031] An undercoat layer may be disposed on the surface of the substrate. The undercoat layer preferably contains a specific polymer, as described below. Use of this undercoat layer further improves the adhesion of each thin metal wire to the substrate. The method for forming the undercoat layer is not particularly limited, and examples include a method in which a composition for forming an undercoat layer containing a specific polymer, as described below, is applied to the substrate, and heat treatment is performed as necessary. The composition for forming an undercoat layer may contain a solvent, as necessary. The type of solvent is not particularly limited, and examples include solvents used in the composition for forming a photosensitive layer, as described below. Furthermore, a latex containing particles of the specific polymer may be used as the composition for forming an undercoat layer containing a specific polymer. The thickness of the undercoat layer is not particularly limited, and is preferably 0.02 to 0.3 μm, more preferably 0.03 to 0.2 μm, in terms of better adhesion of each thin metal wire to the substrate.

[0032] (First metal thin wire, second metal thin wire) In the laminate A, the first metal thin wire constituting the first metal pattern and the second metal thin wire constituting the second metal pattern are arranged on one surface side and the other surface side of the substrate, respectively.

[0033] In this manufacturing method, the width w2 of the second thin metal wires and the thickness d of the substrate satisfy the relationship of formula (1): d / w2≧3.0 (1) The ratio d / w2 of the width w2 of the second thin metal wires to the thickness d of the substrate is preferably 5.0 or more, and more preferably 15.0 or more, in order to achieve better effects of the present invention. There is no particular upper limit, but it is preferably 300.0 or less, and more preferably 150.0 or less.

[0034] The line width w2 of the second thin metal wires is not particularly limited as long as the relationship between the thickness d of the substrate and the above formula (1) is satisfied, but from the viewpoints of achieving better effects of the present invention and making the formed conductive thin wires less visible, it is preferably 5.0 μm or less, more preferably 3.0 μm or less, and even more preferably 2.0 μm or less. There is no particular lower limit, but it is preferably 0.1 μm or more, more preferably 0.5 μm or more. The thickness of the second thin metal wires is not particularly limited, but from the viewpoints of achieving better adhesion to the substrate and better conductivity of the conductive film, it is preferably 0.1 to 3.0 μm, more preferably 0.1 to 2.0 μm.

[0035] In the laminate A, the line width w1 of the first thin metal wires and the thickness d of the substrate preferably satisfy the relationship of formula (2). Formula (2) d / w1≧3.0 When the laminate A does not have a second resist pattern on the other surface side of the substrate, when a second resist film is formed on the other surface side of the substrate and the second resist film is exposed to light from one surface side of the substrate to form a second resist pattern, show-through caused by the first thin metal wires in the resulting second resist pattern can be suppressed. The ratio d / w1 of the line width w1 of the first thin metal wires to the thickness d of the substrate is more preferably 0.5 or more, and even more preferably 15.0 or more, in terms of more excellent effects described above. The upper limit is not particularly limited, but is preferably 300.0 or less, and more preferably 150.0 or less.

[0036] The preferred aspects of the width w1 and thickness of the first thin metal wires are the same as the preferred aspects of the width w2 and thickness of the second thin metal wires.

[0037] Unless otherwise specified, the following description including the simple notation "thin metal wire" applies to both the first thin metal wire and the second thin metal wire without distinction.

[0038] The line width and thickness of the thin metal wires can be measured by the following method. When the thin metal wires are exposed on the surface of the substrate, the line width and thickness of the thin metal wires can be measured using a digital microscope (for example, a microscope "VHX-5000" manufactured by Keyence Corporation). On the other hand, when the thin metal wires are not exposed on the surface of the substrate, the line width and thickness of the thin metal wires can be measured by observation using a scanning electron microscope (SEM). Taking a conductive film obtained by forming an upper conductive layer on the thin metal wires of laminate B as an example, the conductive film is cut along a cross section perpendicular to the direction in which the thin metal wires extend, and the obtained cut surface is observed using an SEM. The maximum value in the width direction of the thin metal wires is measured from the obtained observation image. The above-mentioned cross-sectional observation and measurement using an SEM are performed at 10 arbitrarily selected locations on the conductive film where the thin metal wires are arranged, and the average value obtained by arithmetically averaging the obtained measurements is used as the line width of the thin metal wires. The thickness of the thin metal wires can also be measured in accordance with the above-mentioned line width measurement method.

[0039] The thin metal wire contains a metal as a conductive material. Examples of the metal contained in the thin metal wire include a simple metal selected from the group consisting of silver, copper, gold, nickel, and palladium, and a mixture (alloy) of two or more metals selected from the above group. The metal contained in the thin metal wire is preferably at least one of silver and copper, and more preferably silver, in terms of better conductivity. The silver contained in the thin metal wire may be simple silver or a mixture (silver alloy) of silver and a metal other than silver. Among these, the metal contained in the thin metal wire is more preferably simple silver or an alloy of silver and copper, and even more preferably simple silver.

[0040] The metal (preferably metallic silver) contained in the thin metal wires is often in the form of solid particles. The average particle size of the metal, in terms of equivalent sphere diameter, is preferably 10 to 1,000 nm, more preferably 10 to 200 nm. A particle size of 50 to 150 nm is even more preferable, since this minimizes the change in the resistance value of the conductive thin wires in a humid and hot environment. The equivalent sphere diameter is the diameter of a spherical particle having the same volume. The average particle size of metal particles (preferably metallic silver particles) and silver halide particles described below is obtained by measuring the equivalent sphere diameters of 100 objects and arithmetically averaging them. The shape of the metal particles is not particularly limited, and examples include spherical, cubic, tabular, octahedral, and tetradecahedral shapes. Furthermore, the metal particles may be partially or entirely bonded by fusion.

[0041] The thin metal wires may have a structure in which a plurality of metals are dispersed in a polymer compound described below, or the metals may be aggregated in the polymer compound to exist as aggregates. Furthermore, at least some of the metals contained in the thin metal wires may be bonded to each other by a metal derived from metal ions used in a plating process described below. The metal content in the thin metal wires is not particularly limited, and in order to obtain a conductive film with superior conductivity, the metal content per area of ​​the region on the substrate surface where the thin metal wires are arranged is preferably 1.0 to 20.0 g / m. ２ It is preferable that the density is 2.0 to 10.0 g / m ２ It is more preferable that:

[0042] The thin metal wires preferably contain a polymer compound, since the conductive film has better bending resistance. The type of polymer compound contained in the thin metal wires is not particularly limited, and known polymer compounds can be used. Among them, a polymer compound other than gelatin (hereinafter also referred to as a "specific polymer") is preferred, since it allows the formation of a silver-containing layer and thin metal wires with better strength. The specific polymer contained in the thin metal wires will be described later.

[0043] The thin metal wire may contain gelatin as a polymer compound. The type of gelatin is not particularly limited, and examples thereof include lime-processed gelatin and acid-processed gelatin. Alternatively, a compound selected from the group consisting of gelatin hydrolysates, gelatin enzymatic decomposition products, and gelatin modified with amino groups and / or carboxyl groups (phthalated gelatin and acetylated gelatin) may be used.

[0044] The thin metal wires may further contain other materials in addition to the above-mentioned materials, as needed, including other materials that may be contained in the photosensitive layer described below as needed.

[0045] (First Metal Pattern, Second Metal Pattern) In the laminate A, the arrangement of the first metal pattern composed of first thin metal wires on one surface of the substrate and the arrangement of the second metal pattern composed of second thin metal wires on the other surface of the substrate are not particularly limited. Hereinafter, unless otherwise specified, descriptions including the mere notation "metal pattern" apply to both the first metal pattern and the second metal pattern without distinction.

[0046] The pattern shape of the metal pattern is not particularly limited, and is preferably, for example, a triangle such as an equilateral triangle, an isosceles triangle, or a right-angled triangle; a quadrangle such as a square, a rectangle, a rhombus, a parallelogram, or a trapezoid; a (regular) n-gon such as a (regular) hexagon or a (regular) octagon; a circle, an ellipse, a star, or a geometric figure combining these figures, and more preferably a mesh shape (mesh pattern).

[0047] FIG. 4 is a plan view showing an example of a mesh-shaped metal pattern. The term "mesh-shaped" refers to a shape including multiple non-thin line portions (lattices) 33, each of which is composed of intersecting thin metal wires 30 and is spaced apart from one another, as shown in FIG. 4 . In FIG. 4 , the non-thin line portions 33 have a square shape with a side length of L. However, the non-thin line portions of the mesh pattern may have other shapes as long as they are regions defined by thin metal wires. For example, they may be polygonal (e.g., triangular, quadrilateral (diamond, rectangle, etc.), hexagonal, or random polygonal). The shape of the sides may be curved shapes other than straight lines, or may be arc-shaped. When the sides are arc-shaped, for example, two opposing sides may be arc-shaped outwardly convex, and the other two opposing sides may be arc-shaped inwardly convex. Furthermore, the shape of each side may be a wavy line consisting of a continuous arc that is convex outward and another arc that is convex inward. Of course, each side may be a sine curve.

[0048] The length L of one side of the square lattice-shaped non-thin line portion 33 is not particularly limited, but is preferably 1500 μm or less, more preferably 1300 μm or less, and even more preferably 1000 μm or less. The lower limit of the length L is not particularly limited, but is preferably 5 μm or more, more preferably 30 μm or more, and even more preferably 80 μm or more. When the length of one side of the non-thin line portion is within the above-mentioned range, it is possible to maintain good transparency, and when a conductive film described below is attached to the front of a display device, the display can be viewed without any discomfort.

[0049] In terms of visible light transmittance, the aperture ratio of the metal pattern formed by the thin metal wires is preferably 90% or more, more preferably 95% or more, and even more preferably 99% or more. There is no particular upper limit, but an example is less than 100%. The aperture ratio refers to the ratio (area ratio) of the area of ​​the region where the metal pattern is not disposed to the total area of ​​the surface of the substrate on which the metal pattern is disposed.

[0050] (First resist film) The first resist film of the laminate A is disposed on one surface side of the substrate and on the first metal pattern. As the first resist film, a negative resist in which the exposed portion becomes insoluble in the developer used in the development step is preferred. As the negative resist, a known negative resist can be used. Among them, a negative resist whose solubility in an alkaline developer decreases upon exposure is preferred.

[0051] The thickness of the first resist film is not particularly limited and may be adjusted appropriately depending on the height (thickness) of the upper metal layer and the conductive thin wires formed in the conductive thin wire forming step described below. The thickness of the first resist film is, for example, 0.5 to 100.0 μm, and preferably 1.0 to 30.0 μm. The thickness of the first resist film can be measured in accordance with the method for measuring the line width and thickness of the metal thin wires.

[0052] (Resist Film Forming Step) The laminate A can be produced, for example, by preparing a precursor laminate having at least a substrate, a first metal pattern arranged on one surface side of the substrate and composed of a first metal thin wire, and a second metal pattern arranged on the other surface side of the substrate and composed of a second metal thin wire, and forming a first resist film on the surface side (one surface side) of the prepared precursor laminate on which the first metal pattern of the substrate is arranged. That is, the present production method preferably further includes a resist film forming step (first resist film forming step) of forming a first resist film on the surface side (one surface side) of the precursor laminate on which the first metal pattern of the substrate is arranged, to obtain the laminate A, before the exposure step.

[0053] The resist film formation process can be carried out by a known resist film formation method. Examples of the resist film formation process include a method in which a resist composition containing components contained in the first resist film is applied to the surface side of the substrate on which the first metal pattern is arranged, and if necessary, a curing treatment is performed on the coating film, and a method in which a resist film is transferred to the surface side of the substrate on which the first metal pattern is arranged using a dry film resist. Among these, the method of transferring the resist film using a dry film resist is preferred in that it can suppress deformation of the first metal pattern. A more specific resist film transfer method is, for example, a method in which a dry film resist having a temporary substrate and a resist film is attached to the surface side of the substrate on which the first metal pattern is arranged, and the temporary substrate is peeled off from the resist film to transfer the resist film.

[0054] In addition, when the first resist pattern and the second resist pattern described later are not removed and are used as an insulating film (permanent resist) in a conductive film, it is preferable that the haze and retardation of the resulting insulating film change little over time. Examples of resist materials that can form a resist film that can be used as the insulating film include "ATN1021" negative acrylic resist manufactured by Dow Chemical Company, liquid negative resist material "ZPN1150" (manufactured by Zeon Corporation), and negative dry film resist ("Sunfort" manufactured by Asahi Kasei Electronics Corporation). In addition, in the resist pattern-containing laminate, the resist pattern may be removed after the conductive thin line forming process described later is performed. Examples of methods for removing the resist pattern include a method of stripping using a stripping solution that has high affinity with the material that constitutes the resist pattern. As the stripping solution, a known stripping solution can be used.

[0055] (Precursor laminate) The precursor laminate used in the resist film forming step will be described in more detail. Fig. 5 is a schematic cross-sectional view showing an example of the configuration of a precursor laminate. The precursor laminate 10 shown in Fig. 5 has a substrate 20, first thin metal wires 31 arranged on one surface 21 of the substrate 20, and second thin metal wires 32 arranged on the other surface 22 of the substrate 20. Here, the first thin metal wires 31 constitute a first metal pattern (not shown), and the second thin metal wires 32 constitute a second metal pattern (not shown).

[0056] 5 includes, in this order, second fine metal wires 32 constituting the second metal pattern, a substrate 20, and first fine metal wires 31 constituting the first metal pattern, while the region on the other surface 22 of the substrate 20 where the second fine metal wires 32 are not arranged is exposed. The precursor laminate used in the resist film formation step may include components other than those included in the precursor laminate 10 shown in FIG. 5, as long as the above-mentioned laminate A can be produced by the resist film formation step. For example, the precursor laminate may include, in this order, the second metal pattern, a substrate, and a first metal pattern, and further include a second resist pattern arranged in the region on the other surface of the substrate where the second metal pattern is not arranged.

[0057] The substrate, first thin metal wires, and second thin metal wires of the precursor laminate are the same as those of the laminate A, including preferred embodiments. Next, a method for producing a precursor laminate will be described using a precursor laminate 10 shown in FIG. 5 as an example.

[0058] <<Method for manufacturing precursor laminate>> The method for manufacturing the precursor laminate is not particularly limited as long as it can form the thin metal wires (first thin metal wires and second thin metal wires) having the above-mentioned configuration on both sides of the substrate, and any known method can be used. Examples of methods for forming the thin metal wires include a method (photographic method) in which a silver halide-containing layer containing silver halide particles is provided on the surface of the substrate, and then the silver halide particles are reduced to form the thin metal wires; a method in which a metal-containing layer containing a metal is formed over the entire surface of the substrate, and then the metal-containing layer is partially removed using a resist pattern to form the thin metal wires; and a method in which a metal-containing composition is ejected onto the substrate by a known printing method such as inkjet to form the thin metal wires.

[0059] Among these, a photographic method for forming thin metal wires by reducing silver halide particles is preferred in terms of superior productivity and the conductivity of the conductive film. Examples of photographic methods include the following methods (a) and (b), with method (a) being preferred. (a) A method in which a layer containing silver halide is formed on the surface of a substrate, the formed silver halide-containing layer is exposed to patterned light to reduce the silver halide, and then a patterned thin metal wire is formed by development. (b) A method in which a physical development nucleus layer and a layer containing silver halide are formed in this order on a substrate, a silver layer is precipitated on the physical development nucleus by patterned light exposure, and then the unnecessary silver halide-containing layer is washed away with water (silver complex diffusion transfer method).

[0060] A more specific method for producing a precursor laminate by a photographic process includes carrying out the following steps A to E in this order. Step A: A step of forming a silver halide-free layer containing a dye that is decolorized by a developer, gelatin, and a specific polymer on both sides of a substrate. Step B: A step of forming a silver halide-containing photosensitive layer (hereinafter also referred to as a "photosensitive layer") containing silver halide, gelatin, and a specific polymer in each of the silver halide-free layers formed on both sides of the substrate. Step C: A step of exposing the photosensitive layers formed on both sides of the substrate and then developing them to form thin wire-shaped silver-containing layers containing metallic silver, gelatin, and a specific polymer. Step D: A step of subjecting the silver-containing layer obtained in step C to a heat treatment. Step E: A step of removing the gelatin from the silver-containing layer obtained in step D to form thin metal wires. Steps A to E are described below.

[0061] -Step A- The method for producing a precursor laminate includes, for example, Step A, in which a silver halide-free layer containing a dye that is decolorized by a developer, gelatin, and a specific polymer is formed on both sides of a substrate. By carrying out Step A, an antihalation layer consisting of a silver halide-free layer is formed between the substrate and the silver halide-containing photosensitive layer. This prevents the photosensitive layer on one surface from being exposed to light irradiated onto the other surface during the exposure treatment in Step C, which will be described later. Furthermore, because the dye is decolorized by the developer during the development treatment in Step C, which will be described later, a decrease in the effective exposure dose during the exposure step of this production method can be suppressed. Furthermore, this silver halide-free layer also contributes to improving adhesion between the conductive thin wire and the substrate.

[0062] The substrate used in the production of the precursor laminate is as already explained, including the preferred embodiments.

[0063] The silver halide-free layer contains the dye that is decolorized by the developer, gelatin, and a specific polymer. On the other hand, the silver halide-free layer does not contain silver halide. The ratio of the mass of the specific polymer to the mass of gelatin in the silver halide-free layer (mass of specific polymer / mass of gelatin) is not particularly limited, and is preferably 0.1 to 5.0, and more preferably 1.0 to 3.0. The content of the specific polymer in the silver halide-free layer is not particularly limited, and is not particularly limited, and is not particularly limited, but is not particularly limited, but is not particularly limited, ２ In most cases, the adhesiveness of the conductive thin wire portion is superior, and therefore, 0.5 g / m ２ The upper limit is not particularly limited, but is preferably 2.0 g / m ２ The dye that is decolorized by a developer contained in the silver halide-free layer is not particularly limited as long as it is a dye that is decolorized by a developer (preferably an alkaline developer) used in the development treatment in step C, and examples thereof include cyanine dyes, pyrylium dyes, and aminium dyes. From the viewpoints of antihalation effect and a decrease in sensitivity due to an increase in the amount added, the content of the dye in the silver halide-free layer is preferably 0.01 to 10% by mass, and more preferably 0.1 to 5% by mass, based on the total solid content of the silver halide-free layer.

[0064] The method for forming the silver halide-free layer is not particularly limited, and examples include a method in which a layer-forming composition containing the dye, gelatin, and a specific polymer is applied to a substrate, followed by heat treatment as needed. The layer-forming composition may contain a solvent as needed. Examples of the solvent include those used in the photosensitive layer-forming composition described below. The thickness of the silver halide-free layer is not particularly limited, and is often 0.05 μm or more. In order to improve the adhesion of the conductive thin line portion, a thickness of more than 1.0 μm is preferred, and 1.5 μm or more is more preferred. The upper limit is not particularly limited, but a thickness of less than 3.0 μm is preferred. The optical density of the silver halide-free layer at a wavelength of 360 nm before the development process in step C is preferably 0.5 or more, and more preferably 0.7 or more, in order to improve its effectiveness as an antihalation layer. The upper limit of the optical density is not particularly limited, and is preferably 3.0 or less. The optical density of the silver halide-free layer can be adjusted, for example, by the type and content of the dye. The optical density of the silver halide-free layer can be determined by measuring the transmittance of the silver halide-free layer at a wavelength of 360 nm using a UV spectrophotometer (for example, "UV-1800" manufactured by Shimadzu Corporation) and converting the result into optical density. The composition and physical properties of the silver halide-free layers formed on both sides of the substrate may be the same or different.

[0065] -Step B- Step B is a step of forming a photosensitive layer (silver halide-containing photosensitive layer) containing silver halide, gelatin, and a specific polymer (a polymer compound different from gelatin) in each of the silver halide-free layers formed on both sides of the substrate. Step B produces a substrate with a photosensitive layer, which is then subjected to an exposure treatment described below. First, materials (silver halide, gelatin, and specific polymer) preferably used in producing a substrate with a photosensitive layer will be described, and then the procedure of Step B will be described in detail.

[0066] (Silver Halide) The halogen atoms contained in the silver halide may be any of chlorine atoms, bromine atoms, iodine atoms, and fluorine atoms, or a combination thereof. For example, silver halides mainly composed of silver chloride, silver bromide, or silver iodide are preferred, and silver halides mainly composed of silver chloride or silver bromide are more preferred. Silver chlorobromide, silver iodochlorobromide, or silver iodobromide are also preferably used. Here, for example, "silver halide mainly composed of silver chloride" refers to a silver halide in which the molar fraction of chloride ions in the silver halide composition is 50% or more of all halide ions. This silver halide mainly composed of silver chloride may contain bromide ions and / or iodide ions in addition to chloride ions.

[0067] The silver halide is usually in the form of solid particles, and the average particle size of the silver halide is preferably 10 to 1,000 nm, more preferably 10 to 200 nm, in terms of equivalent sphere diameter, and even more preferably 50 to 150 nm, in that the change in resistance value of the conductive thin wire formed in a moist and hot environment is smaller. The equivalent sphere diameter is the diameter of a spherical particle having the same volume. The "equivalent sphere diameter" used as the average particle size of the silver halide described above is an average value, and is calculated by measuring the equivalent sphere diameters of 100 silver halide particles and arithmetically averaging them.

[0068] The shape of the silver halide grains is not particularly limited, and examples thereof include spherical, cubic, tabular (hexagonal tabular, triangular tabular, quadrangular tabular, etc.), octahedral, and tetradecahedral shapes.

[0069] (Gelatin) The type of gelatin is not particularly limited, and examples thereof include lime-processed gelatin and acid-processed gelatin. In addition, gelatin hydrolysates, enzymatic decomposition products, and gelatin modified with amino groups and / or carboxyl groups (phthalated gelatin and acetylated gelatin) may also be used.

[0070] (Specific Polymer) The specific polymer is a polymer compound different from the gelatin. When the photosensitive layer contains the specific polymer, the strength of the thin metal wire formed from the photosensitive layer is easily improved. The type of specific polymer is not particularly limited as long as it is a compound different from gelatin. A polymer compound that is not decomposed by proteolytic enzymes or oxidizing agents, which decompose gelatin, as described below, is preferred. Examples of the specific polymer include hydrophobic polymers (water-insoluble polymers), such as at least one resin selected from the group consisting of (meth)acrylic resins, styrene resins, vinyl resins, polyolefin resins, polyester resins, polyurethane resins, polyamide resins, polycarbonate resins, polydiene resins, epoxy resins, silicone resins, cellulose polymers, and chitosan polymers, or copolymers of monomers constituting these resins. Furthermore, the specific polymer preferably has a reactive group that reacts with the crosslinking agent described below. The specific polymer is preferably particulate. In other words, the thin metal wire preferably contains particles of the specific polymer.

[0071] The specific polymer is preferably a polymer (copolymer) represented by the following general formula (1): General formula (1): -(A) ｘ -(B) ｙ -(C) ｚ -(D) ｗ In the general formula (1), A, B, C, and D represent repeating units represented by the following general formulae (A) to (D), respectively.

[0072]

[0073] R １１ represents a methyl group or a halogen atom, and is preferably a methyl group, a chlorine atom, or a bromine atom. p represents an integer of 0 to 2, preferably 0 or 1, and more preferably 0. R １２ represents a methyl group or an ethyl group, and a methyl group is preferred. １３ represents a hydrogen atom or a methyl group, preferably a hydrogen atom. L represents a divalent linking group, preferably a group represented by the following general formula (2): General formula (2): -(CO-X １ )r-X ２- In general formula (2), X １ is an oxygen atom or NR ３０ - where R ３０ represents a hydrogen atom, an alkyl group, an aryl group, or an acyl group, each of which may have a substituent (for example, a halogen atom, a nitro group, or a hydroxy group). ３０ is preferably a hydrogen atom, an alkyl group having 1 to 10 carbon atoms (for example, a methyl group, an ethyl group, an n-butyl group, and an n-octyl group), or an acyl group (for example, an acetyl group and a benzoyl group). １ is preferably an oxygen atom or NH—. ２ represents an alkylene group, an arylene group, an alkylenearylene group, an arylenealkylene group, or an alkylenearylenealkylene group, and these groups include -O-, -S-, -CO-, -COO-, -NH-, -SO ２ -, -N(R ３１ ) - or -N(R ３１ ) SO ２ - etc. may be inserted in the middle. ３１ represents a linear or branched alkyl group having 1 to 6 carbon atoms. ２ Examples of the alkyl group include a dimethylene group, a trimethylene group, a tetramethylene group, an o-phenylene group, an m-phenylene group, a p-phenylene group, and —CH ２ CH ２ OCOCH ２ CH ２ - or -CH ２ CH ２ OCO (C ６ H ４ )- is preferred. r represents 0 or 1. q represents 0 or 1, with 0 being preferred.

[0074] R １４ represents an alkyl group, an alkenyl group, or an alkynyl group, and is preferably an alkyl group having 5 to 50 carbon atoms, more preferably an alkyl group having 5 to 30 carbon atoms, and even more preferably an alkyl group having 5 to 20 carbon atoms. １５ is a hydrogen atom, a methyl group, an ethyl group, a halogen atom, or —CH ２ COOR １６ represents a hydrogen atom, a methyl group, a halogen atom, or —CH２ COOR １６ is preferred, and a hydrogen atom, a methyl group, or —CH ２ COOR １６ is more preferred, and a hydrogen atom is even more preferred. １６ represents a hydrogen atom or an alkyl group having 1 to 80 carbon atoms, R １４ may be the same as or different from R １６ The number of carbon atoms is preferably 1 to 70, and more preferably 1 to 60.

[0075] In general formula (1), x, y, z, and w represent the molar ratio of each repeating unit. x is 3 to 60 mol%, preferably 3 to 50 mol%, and more preferably 3 to 40 mol%. y is 30 to 96 mol%, preferably 35 to 95 mol%, and more preferably 40 to 90 mol%. z is 0.5 to 25 mol%, preferably 0.5 to 20 mol%, and more preferably 1 to 20 mol%. w is 0.5 to 40 mol%, preferably 0.5 to 30 mol%. In general formula (1), it is preferable that x is 3 to 40 mol%, y is 40 to 90 mol%, z is 0.5 to 20 mol%, and w is 0.5 to 10 mol%.

[0076] The polymer represented by the general formula (1) is preferably a polymer represented by the following general formula (2).

[0077]

[0078] In the general formula (2), x, y, z and w are as defined above.

[0079] The polymer represented by general formula (1) may contain repeating units other than the repeating units represented by general formulas (A) to (D) described above. Examples of monomers for forming the other repeating units include acrylic acid esters, methacrylic acid esters, vinyl esters, olefins, crotonates, itaconic acid diesters, maleic acid diesters, fumaric acid diesters, acrylamides, unsaturated carboxylic acids, allyl compounds, vinyl ethers, vinyl ketones, vinyl heterocyclic compounds, glycidyl esters, and unsaturated nitriles. These monomers are also described in paragraphs 0010 to 0022 of Japanese Patent No. 3754745. From the viewpoint of hydrophobicity, acrylic acid esters or methacrylic acid esters are preferred, and hydroxyalkyl methacrylates or hydroxyalkyl acrylates are more preferred. The polymer represented by general formula (1) preferably contains a repeating unit represented by general formula (E).

[0080]

[0081] In the above formula, L Ｅ represents an alkylene group, preferably an alkylene group having 1 to 10 carbon atoms, more preferably an alkylene group having 2 to 6 carbon atoms, and even more preferably an alkylene group having 2 to 4 carbon atoms.

[0082] As the polymer represented by the general formula (1), a polymer represented by the following general formula (3) is particularly preferred.

[0083]

[0084] In the above formula, a1, b1, c1, d1, and e1 represent the molar ratio of each repeating unit, with a1 representing 3 to 60 (mol%), b1 representing 30 to 95 (mol%), c1 representing 0.5 to 25 (mol%), d1 representing 0.5 to 40 (mol%), and e1 representing 1 to 10 (mol%). The preferred range of a1 is the same as the preferred range of x described above, the preferred range of b1 is the same as the preferred range of y described above, the preferred range of c1 is the same as the preferred range of z described above, and the preferred range of d1 is the same as the preferred range of w described above. e1 is 1 to 10 mol%, preferably 2 to 9 mol%, and more preferably 2 to 8 mol%.

[0085] The specific polymer can be synthesized by referring to, for example, Japanese Patent No. 3305459 and Japanese Patent No. 3754745. The weight average molecular weight of the specific polymer is not particularly limited, but is preferably 1000 to 1000000, more preferably 2000 to 750000, and even more preferably 3000 to 500000.

[0086] (Other Materials) The photosensitive layer may contain materials other than those described above, as necessary. Examples of such materials include metal compounds belonging to Group 8 or Group 9, such as rhodium compounds and iridium compounds, which are used to stabilize and increase the sensitivity of silver halide. Other materials include antistatic agents, nucleation accelerators, spectral sensitizing dyes, surfactants, antifogging agents, film hardeners, anti-black spot agents, redox compounds, monomethine compounds, and dihydroxybenzenes, as described in paragraphs

[0220] to

[0241] of JP-A-2009-004348. When using the above method (b) in the photographic process, other materials also include physical development nuclei. Examples of materials for physical development nuclei include colloids of gold, silver, etc., and metal sulfides obtained by mixing a water-soluble salt of palladium, zinc, etc. with a sulfide.

[0087] The photosensitive layer may also contain a crosslinking agent used to crosslink the specific polymers described above. By including the crosslinking agent, crosslinking between the specific polymers progresses, and even when the gelatin is decomposed and removed, the bonds between the metallic silver particles in the layer formed by the photosensitive layer are maintained.

[0088] In the photographic process, when the above method (b) is used, a physical development nucleus layer containing physical development nuclei may be provided between the substrate and the photosensitive layer. The physical development nuclei contained in the physical development nucleus layer are as described above. For the method of forming the physical development nucleus layer, reference can be made to the descriptions in paragraphs

[0007] to

[0016] of JP-A-5-265162, etc.

[0089] (Procedure of Step B) The method for forming the photosensitive layer containing the above-mentioned components in Step B is not particularly limited, but from the viewpoint of productivity, a method is preferred in which a photosensitive layer-forming composition containing silver halide, gelatin, and a specific polymer is brought into contact with the surface of a silver halide-free layer to form a photosensitive layer on the silver halide-free layer. Below, the form of the photosensitive layer-forming composition used in this method will be described in detail, and then the procedure of the step will be described in detail.

[0090] (Materials contained in the composition for forming a photosensitive layer) The composition for forming a photosensitive layer contains the above-mentioned silver halide, gelatin, and specific polymer. If necessary, the specific polymer may be contained in the composition for forming a photosensitive layer in the form of particles. If necessary, the composition for forming a photosensitive layer may contain a solvent. Examples of the solvent include water, organic solvents (e.g., alcohols, ketones, amides, sulfoxides, esters, and ethers), ionic liquids, and mixed solvents thereof.

[0091] The method for contacting the photosensitive layer-forming composition with the surface of the silver halide-free layer is not particularly limited, and examples thereof include a method of applying the photosensitive layer-forming composition to the surface of the silver halide-free layer, and a method of immersing a substrate with a silver halide-free layer in the photosensitive layer-forming composition. When forming a photosensitive layer by applying the photosensitive layer-forming composition, the composition may be applied to both surfaces simultaneously, or may be applied to one surface and then to the other surface. After the above-mentioned treatment, a drying treatment may be carried out as necessary.

[0092] (Silver halide-containing photosensitive layer) The photosensitive layer (silver halide-containing photosensitive layer) formed by the above-described procedure contains silver halide, gelatin, and a specific polymer. The content of silver halide in the photosensitive layer is not particularly limited, but it is set to 1.0 to 10.0 g / m in terms of silver in order to function as a self-aligned mask pattern in the exposure step described later and to suppress variations in the line width of thin metal lines formed after the development process described later. ２ is preferred, and 2.0 to 7.0 g / m ２The silver equivalent means that the silver halide is converted into the mass of silver produced by reducing all of the silver halide. The content of the specific polymer in the photosensitive layer is not particularly limited, and is preferably 0.04 to 2.0 g / m from the viewpoint of providing superior formability of the upper conductive layer on the thin metal wires and superior flexibility of the thin conductive wires. ２ is preferably 0.08 to 1.0 g / m ２ The composition and physical properties of the photosensitive layers formed on both sides of the substrate may be the same or different.

[0093] The above-mentioned step A and step B may be carried out simultaneously by simultaneous multilayer coating. That is, the silver halide-free layer-forming composition and the photosensitive layer-forming composition may be applied to the surface of the substrate to simultaneously form the silver halide-free layer and the photosensitive layer in that order from the surface side of the substrate.

[0094] -Step C- Step C is a step of exposing the photosensitive layer and then developing it to form a fine line-shaped silver-containing layer containing metallic silver, gelatin, and a specific polymer.

[0095] By subjecting the photosensitive layer to an exposure treatment, a latent image is formed in the exposed region. The exposure may be carried out in a pattern. For example, to obtain a mesh pattern consisting of conductive thin wires as described below, there are a method of exposing through a mask having a mesh-shaped opening pattern and a method of exposing in a mesh pattern by scanning with laser light. The type of light used for exposure is not particularly limited, and any light capable of forming a latent image in the silver halide may be used, for example, visible light, ultraviolet light, and X-rays. The exposure treatment may be carried out simultaneously on the photosensitive layers on both sides of the substrate, or one photosensitive layer may be exposed first and then the other photosensitive layer may be exposed.

[0096] By subjecting the exposed photosensitive layer to a development process, metallic silver is precipitated in the exposed region (region where a latent image is formed). The development process method is not particularly limited, and examples thereof include known methods used for silver halide photographic film, photographic paper, film for printing platemaking, and emulsion masks for photomasks. A developer is usually used in the development process. The type of developer is not particularly limited, and examples thereof include PQ (phenidone hydroquinone) developer, MQ (Metol hydroquinone) developer, and MAA (Metol ascorbic acid) developer. The developability of the photosensitive layer is determined by the wavelength and light intensity of the light source, as well as the sensitivity characteristics of the photosensitive layer.

[0097] Step C may further include a fixing treatment for the purpose of removing and stabilizing the silver halide in unexposed areas. The fixing treatment is carried out simultaneously with and / or after development. The fixing method is not particularly limited, and examples thereof include methods used for silver halide photographic film, photographic paper, film for printing plate making, and emulsion masks for photomasks. A fixing solution is usually used in the fixing treatment. The type of fixing solution is not particularly limited, and examples thereof include the fixing solution described on page 321 of "Chemistry of Photography" (by Sasai, Photo Industry Publishing Co., Ltd.).

[0098] By carrying out the above-mentioned treatment, a thin-line silver-containing layer containing metallic silver, gelatin, and a specific polymer is formed. For example, a method for adjusting the width of the silver-containing layer includes adjusting the opening width of the mask used during exposure. Furthermore, when using a mask during exposure, the width of the formed silver-containing layer can also be adjusted by adjusting the exposure dose. For example, when the opening width of the mask is narrower than the target width of the silver-containing layer, the width of the region where the latent image is formed can be adjusted by increasing the exposure dose. That is, the line width of the silver-containing layer and the formed conductive thin wires can be adjusted by adjusting the exposure dose. Furthermore, when laser light is used, the exposure region can be adjusted by adjusting the focusing range and / or scanning range of the laser light.

[0099] The width of the silver-containing layer is adjusted appropriately depending on the line width w2 of the second thin metal wire and the line width w1 of the first thin metal wire, but is preferably less than 5.0 μm, more preferably 3.0 μm or less, and even more preferably 2.0 μm or less. There is no particular lower limit, but it is preferably 0.1 μm or more, more preferably 0.5 μm or more. The silver-containing layer obtained by the above-mentioned procedure is thin-line shaped, and the width of the silver-containing layer means the length (width) of the silver-containing layer in the direction perpendicular to the direction in which the thin-line shaped silver-containing layer extends.

[0100] -Step D- Step D is a step of subjecting the silver-containing layer obtained in Step C to a heat treatment. By carrying out this step, fusion between specific polymers in the silver-containing layer progresses, and the strength of the silver-containing layer is improved.

[0101] The heat treatment method is not particularly limited, and examples thereof include a method of bringing the silver-containing layer into contact with superheated steam and a method of heating with a temperature adjustment device (e.g., a heater), and the method of bringing the silver-containing layer into contact with superheated steam is preferred.

[0102] The superheated steam may be superheated water vapor or a mixture of superheated water vapor and other gases. The contact time between the superheated steam and the silver-containing layer is not particularly limited, but is preferably 10 to 70 seconds. The supply amount of superheated steam is 500 to 600 g / m. ３ The temperature of the superheated steam is preferably 100 to 160°C (preferably 100 to 120°C) at 1 atmospheric pressure.

[0103] The heating conditions for the method of heating the silver-containing layer with a temperature regulator are preferably 100 to 200° C. (preferably 100 to 150° C.) for 1 to 240 minutes (preferably 60 to 150 minutes).

[0104] -Step E-Step E is a step of removing gelatin from the silver-containing layer obtained in step D. By carrying out this step, gelatin is removed from the silver-containing layer, and voids are formed in the silver-containing layer.

[0105] The method for removing gelatin is not particularly limited, and examples thereof include a method using a protease (hereinafter also referred to as "Method 1") and a method for decomposing and removing gelatin using an oxidizing agent (hereinafter also referred to as "Method 2").

[0106] The protease used in Method 1 includes known plant or animal enzymes capable of hydrolyzing proteins such as gelatin. Examples of protease include pepsin, rennin, trypsin, chymotrypsin, cathepsin, papain, ficin, thrombin, renin, collagenase, bromelain, and bacterial proteases, with trypsin, papain, ficin, or bacterial proteases being preferred. The procedure in Method 1 may involve contacting the silver-containing layer with the protease, such as contacting the silver-containing layer with a treatment solution containing the protease (hereinafter also referred to as "enzyme solution"). Examples of contacting methods include immersing the silver-containing layer in the enzyme solution and applying the enzyme solution to the silver-containing layer. The content of the protease in the enzyme solution is not particularly limited, and is preferably 0.05 to 20% by mass, more preferably 0.5 to 10% by mass, relative to the total amount of the enzyme solution, in that it is easy to control the degree of decomposition and removal of gelatin. In addition to the above-mentioned protease, the enzyme solution often contains water. The enzyme solution may contain other additives (e.g., pH buffers, antibacterial compounds, humectants, and preservatives) as needed. The pH of the enzyme solution is selected so as to maximize the activity of the enzyme, and is generally preferably 5 to 9. The temperature of the enzyme solution is preferably a temperature at which the activity of the enzyme is enhanced. Specifically, 25 to 45°C is preferred.

[0107] If necessary, after treatment with the enzyme solution, the resulting silver-containing layer may be washed with warm water. The washing method is not particularly limited, and a method of contacting the silver-containing layer with warm water is preferred. Examples include a method of immersing the silver-containing layer in warm water and a method of applying warm water to the silver-containing layer. The temperature of the warm water is appropriately selected depending on the type of protease used. From the viewpoint of productivity, a temperature of 20 to 80°C is preferred, and 40 to 60°C is more preferred. The contact time (washing time) between the warm water and the silver-containing layer is not particularly limited, and from the viewpoint of productivity, a time of 1 to 600 seconds is preferred, and 30 to 360 seconds is more preferred.

[0108] The oxidizing agent used in Method 2 may be any oxidizing agent capable of decomposing gelatin, and is preferably an oxidizing agent having a standard electrode potential of +1.5 V or more. The standard electrode potential here refers to the standard electrode potential (at 25°C, E ０ Examples of the oxidizing agent include persulfuric acid, percarbonic acid, perphosphoric acid, hypoperchloric acid, peracetic acid, metachloroperbenzoic acid, hydrogen peroxide solution, perchloric acid, periodic acid, potassium permanganate, ammonium persulfate, ozone, hypochlorous acid or a salt thereof, and the like. From the viewpoints of productivity and economy, however, hydrogen peroxide solution (standard electrode potential: 1.76 V), hypochlorous acid or a salt thereof are preferred, and sodium hypochlorite is more preferred.

[0109] The procedure in Method 2 may be any method that brings the silver-containing layer into contact with the above-mentioned oxidizing agent, and examples thereof include a method of bringing the silver-containing layer into contact with a treatment liquid containing an oxidizing agent (hereinafter also referred to as "oxidizing agent liquid"). Examples of the contact method include a method of immersing the silver-containing layer in the oxidizing agent liquid and a method of applying the oxidizing agent liquid onto the silver-containing layer. The type of solvent contained in the oxidizing agent liquid is not particularly limited, and examples thereof include water and organic solvents.

[0110] -Step F- The method for producing a precursor laminate may further include step F, in which a smoothing treatment is performed, after step E. By performing step F, a conductive thin wire with superior handling resistance (film strength) can be obtained. The method of smoothing treatment is not particularly limited, and for example, a calendering treatment step in which a substrate having a silver-containing layer is passed between at least a pair of rolls under pressure is preferred. Hereinafter, smoothing treatment using a calender roll will be referred to as calendering treatment. Rollers used in calendering treatment include plastic rolls and metal rolls, with plastic rolls being preferred from the viewpoint of preventing wrinkles. The pressure between the rolls is not particularly limited, and is preferably 2 MPa or more, more preferably 4 MPa or more, and preferably 120 MPa or less. The pressure between the rolls can be measured using a prescale (for high pressure) manufactured by Fujifilm Corporation. The temperature of the smoothing treatment is not particularly limited, and is preferably 10 to 100°C, and more preferably 10 to 50°C.

[0111] [Resist Pattern-Containing Laminate] The resist pattern-containing laminate produced by the present production method includes at least a substrate, a first metal pattern disposed on one surface of the substrate and composed of first thin metal wires, a first resist pattern disposed on one surface of the substrate in an area where the first thin metal wires are not disposed, and a second metal pattern disposed on the other surface of the substrate and composed of second thin metal wires. The resist pattern-containing laminate produced by the present production method functions as a conductive film having conductivity.

[0112] An example of the configuration of the resist pattern-containing laminate is the laminate 13 already described and shown in Fig. 3. The resist pattern-containing laminate produced by the present production method is not limited to the embodiment shown in Fig. 3, and may include components other than the substrate, the first metal pattern, the first resist pattern, and the second metal pattern.

[0113] <Second Resist Pattern> The resist pattern-containing laminate may have, for example, a second resist pattern disposed on the other surface side of the substrate and disposed in an area where the second conductive thin wires are not disposed. Figure 6 shows another example of the configuration of a resist pattern-containing laminate produced by this production method. The laminate (resist pattern-containing laminate) 16 shown in Figure 6 has a substrate 20, first metal thin wires 31 disposed on one surface 21 of the substrate 20, a first resist pattern 43 disposed on one surface 21 of the substrate and disposed in an area where the first metal thin wires 31 are not disposed, a second metal thin wire 32 disposed on the other surface 22 of the substrate 20, and a second resist pattern 53 disposed on the other surface 22 of the substrate and disposed in an area where the second metal thin wires 32 are not disposed.

[0114] In the laminate 16 shown in Fig. 6, the substrate 20, the first thin metal wires 31, the second thin metal wires 32, and the first resist pattern 43 are the same as those in the laminate 13 shown in Fig. 3. The second resist pattern 53 of the laminate 16 has the same configuration as the first resist pattern 43, except that it is arranged on the other surface 22 side of the substrate in an area where the second thin metal wires 32 are not arranged, and the preferred aspects are also the same.

[0115] The method for forming the second resist pattern is not particularly limited, and can be, for example, formed by carrying out the same steps as in the step of forming the first resist pattern. That is, the second resist pattern can be formed by forming a second resist film on the other surface side of the substrate in the precursor laminate according to the method described in the resist film formation step, exposing the second resist film by irradiating light from one surface side of the substrate according to the method described in the exposure step, and developing the exposed second resist film according to the method described in the development step. Preferred aspects of each step, precursor laminate, resist film, etc. are also the same as those in the step of forming the first resist pattern.

[0116] <Upper Conductive Layer> The resist pattern-containing laminate may further include an upper conductive layer that is disposed on the surface side of at least one of the first metal pattern formed of the first fine metal wires and the second metal pattern formed of the second fine metal wires, and that contains a conductive material such as a metal. In the resist pattern-containing laminate, the upper conductive layer is disposed on the fine metal wires (metal pattern), and conductive fine wires are formed having a laminate structure including the fine metal wires and the upper conductive layer, so that the resist pattern-containing laminate can be used as a conductive film with improved conductivity.

[0117] 7 shows another example of the structure of a resist pattern-containing laminate produced by this production method. The laminate (resist pattern-containing laminate) 1 shown in FIG. 7 has a substrate 20, first fine metal wires 31 arranged on one surface 21 of the substrate 20, an upper conductive layer 61 arranged on the first fine metal wires 31, a first resist pattern 43 arranged on one surface 21 of the substrate and arranged in an area where the first fine metal wires 31 are not arranged, second fine metal wires 32 arranged on the other surface 22 of the substrate 20, an upper conductive layer 62 arranged on the second fine metal wires 32, and a second resist pattern 53 arranged on the other surface 22 of the substrate and arranged in an area where the second fine metal wires 32 are not arranged. In the laminate 1 shown in FIG. 7, the substrate 20, the first fine metal wires 31, the second fine metal wires 32, the first resist pattern 43, and the second resist pattern 53 are the same as those of the laminate 16 shown in FIG. 6.

[0118] The resist pattern-containing laminate having an upper conductive layer is not limited to the embodiment shown in FIG. 7, and the upper conductive layer may be disposed on only one surface side of the first fine metal wires (first metal pattern) and the second fine metal wires (second metal pattern). It is more preferable to have an upper conductive layer on the surface side of both the first fine metal wires and the second fine metal wires, as this provides better conductivity. Furthermore, in the resist pattern-containing laminate, it is preferable that the upper conductive layer is not disposed in the region on the surface side of the substrate where the fine metal wires are not disposed, i.e., the region where the first resist pattern or the second resist pattern is disposed. In this case, the conductive fine wires formed of a laminate structure including the fine metal wires and the upper conductive layer form a conductive pattern having a pattern shape similar to the metal pattern formed by the fine metal wires. The pattern shape of the conductive pattern formed of the conductive fine wires may be the same as the pattern shape of the metal pattern, including preferred embodiments.

[0119] The upper conductive layer includes a conductive material such as a metal, and preferably includes a metal. Examples of the metal included in the upper conductive layer include a simple metal selected from the group consisting of silver, copper, gold, nickel, cobalt, and palladium, and a mixture (alloy) of two or more metals selected from the above group. Among these, at least one of silver and copper is preferred because of its superior conductivity, and simple silver or an alloy of silver and copper is more preferred, with simple silver being even more preferred.

[0120] The upper conductive layer preferably contains a metal as a main component. The phrase "mainly containing" a metal means that the metal content is 50% by mass or more relative to the total mass of the upper conductive layer. The metal content in the upper conductive layer is preferably 90% by mass or more, more preferably 95% by mass or more, relative to the total mass of the upper conductive layer. There is no particular upper limit, and it may be 100% by mass relative to the total mass of the upper conductive layer.

[0121] The resist pattern-containing laminate may have a blackened layer as the conductive layer farthest from the substrate among the conductive layers constituting the upper conductive layer. The blackened layer has the function of preventing light reflection on the surface of the conductive thin wire and further improving visibility. Examples of the blackened layer include known black plating layers such as a black chrome plating layer, a black nickel plating layer, and a black alumite plating layer. These blackened layers can be formed by plating using known black metal materials.

[0122] The line width of the upper conductive layer is, for example, 5.0 μm or less, more preferably 3.0 μm or less, and even more preferably 2.0 μm or less, from the viewpoint of making the conductive thin wires less visible. The lower limit is not particularly limited, but is preferably 0.1 μm or more, more preferably 0.5 μm or more, from the viewpoint of better conductivity. The height of the upper conductive layer is preferably 1.0 μm or more, more preferably 2.0 μm or more, from the viewpoint of better conductivity. The upper limit is not particularly limited, but is preferably 20.0 μm or less, more preferably 10.0 μm or less, from the viewpoint of making the conductive thin wires less visible and making the conductive film more bendable. The line width and height of the upper conductive layer can be measured by performing the same measurement method as the above-mentioned method for measuring the line width and thickness of the metal thin wires.

[0123] The resist pattern-containing laminate preferably has, on at least one surface side of the substrate, a conductive pattern composed of conductive fine wires having a laminate structure including fine metal wires and an upper conductive layer, and more preferably has, on one surface side of the substrate, a first conductive pattern composed of first conductive fine wires having a laminate structure including first fine metal wires and an upper conductive layer, and, on the other surface side of the substrate, a second conductive pattern composed of second conductive fine wires having a laminate structure including second fine metal wires and an upper conductive layer.

[0124] <Conductive Thin Wire Forming Step> The method for forming an upper conductive layer on the surface side of the fine metal wires to obtain the conductive thin wires is not particularly limited as long as it is a method that can form the conductive thin wires by stacking a conductive material such as a metal on the surface side of the fine metal wires, but a method of forming a plated metal layer by plating is preferred. That is, the present production method may further include a conductive thin wire forming step of forming a resist pattern according to the method described in the above-mentioned development step, and then forming an upper conductive layer on the fine metal wires exposed in the openings of the obtained resist pattern to obtain the conductive thin wires. In the conductive thin wire forming step, it is preferable to perform a plating step using the fine metal wires as a seed layer to form a plated metal layer as an upper conductive layer on the fine metal wires.

[0125] The plating method is not particularly limited, and may be electroless plating (chemical reduction plating, displacement plating, etc.) or electrolytic plating, but is preferably electroless plating. Known electroless plating techniques are used for electroless plating. Examples of plating include silver plating, copper plating, nickel plating, and cobalt plating. Silver plating or copper plating is preferred, with silver plating being more preferred, as they provide superior conductivity to the conductive thin wire.

[0126] The components contained in the plating solution used in the plating process are not particularly limited, but typically contain, in addition to a solvent (e.g., water), 1. metal ions for plating, 2. a reducing agent, 3. an additive (stabilizer) for improving the stability of the metal ions, and 4. a pH adjuster. In addition to these, the plating solution may also contain known additives such as a stabilizer for the plating solution. The type of metal ions for plating contained in the plating solution can be appropriately selected depending on the type of metal to be deposited, and examples include silver ions, copper ions, nickel ions, and cobalt ions. A commercially available plating solution may be used.

[0127] The procedure for the above-mentioned plating treatment is not particularly limited, and any method that brings the metal pattern into contact with the plating solution may be used, for example, a method of immersing the metal pattern in the plating solution, or a method of applying the plating solution to the metal pattern. The contact time between the metal pattern and the plating solution is not particularly limited, and is preferably 20 seconds to 30 minutes from the viewpoints of superior conductivity of the conductive thin wires and productivity.

[0128] When forming thin conductive wires having a blackened layer at a position farthest from the substrate, the blackened layer can be formed by performing plating treatment using the above-mentioned black metal material in the thin conductive wire forming step.

[0129] Furthermore, after the conductive thin wire forming step is performed, a heat treatment may be further performed. By performing the heat treatment, a conductive thin wire having more excellent conductivity can be obtained. The method for performing the heat treatment on the conductive thin wire is not particularly limited, and examples thereof include the methods described in the above step D.

[0130] <Conductive Film> As described above, the resist pattern-containing laminate produced by the present production method can be suitably used as a conductive film. In particular, a conductive film in which the first resist pattern and the second resist pattern function as insulating films is preferred.

[0131] A preferred example of a conductive film made of a resist pattern-containing laminate produced by this production method is a conductive film having a substrate, first conductive thin wires arranged on one surface side of the substrate, a first insulating film arranged on one surface side of the substrate and arranged in an area where the first conductive thin wires are not arranged, second conductive thin wires arranged on the other surface side of the substrate, and a second insulating film arranged on the other surface side of the substrate and arranged in an area where the second conductive thin wires are not arranged, wherein the line width v2 of the second conductive thin wires and the thickness d of the substrate satisfy the relationship of formula (X2): formula (X2) d / v2≧3.0

[0132] In the conductive film, the ratio d / v2 of the thickness d of the substrate to the line width v2 of the second conductive thin wire is preferably 5.0 or more, and more preferably 15.0 or more, in order to achieve better effects of the present invention. There is no particular upper limit, but it is preferably 300.0 or less, and more preferably 150.0 or less.

[0133] In the conductive film, the line width v1 of the first conductive thin wires and the thickness d of the substrate preferably satisfy the following formula (X1), in that a conductive film in which show-through due to the first thin metal wires in the second insulating film is suppressed is obtained. Formula (X1) d / v1≧3.0 Furthermore, the ratio d / v1 of the thickness d of the substrate to the line width v1 of the first conductive thin wires is more preferably 5.0 or greater, and even more preferably 15.0 or greater. There is no particular upper limit, but it is preferably 300.0 or less, and more preferably 150.0 or less.

[0134] The line width v2 of the second conductive thin wire is not particularly limited as long as the relationship of the above formula (X2) is satisfied, but is, for example, 5.0 μm or less, more preferably 3.0 μm or less, and even more preferably 2.0 μm or less, in order to make the conductive thin wire less visible. The lower limit is not particularly limited, but is preferably 0.1 μm or more, and more preferably 0.5 μm or more, in order to obtain better conductivity.

[0135] The height h2 of the second conductive thin wires is not particularly limited, but is preferably 1.0 μm or more, and more preferably 2.0 μm or more, in terms of superior conductivity. The upper limit is not particularly limited, but is preferably 20.0 μm or less, and more preferably 10.0 μm or less, in terms of the conductive thin wires being less visible and the conductive film having superior bendability.

[0136] Furthermore, in terms of superior conductivity, the ratio h2 / v2 of the height h2 of the second conductive thin wire to the line width v2 of the second conductive thin wire is preferably 1.0 or more, more preferably 2.0 or more, and even more preferably 2.5 or more. There is no particular upper limit, but in terms of making the conductive thin wire less visible and superior bendability of the conductive film, it is preferably 20.0 or less, and more preferably 10.0 or less. That is, it is more preferable that the height h2 of the second conductive thin wire and the line width v2 of the second conductive thin wire satisfy the relationship of the following formula (Y2): Formula (Y2) h2 / v2≧2.0

[0137] The preferred aspects of the width v1 and height h1 of the first conductive thin wire and the ratio h1 / v1 of the height h1 of the first conductive thin wire to the width v1 of the first conductive thin wire are the same as those of the first conductive thin wire. In particular, it is more preferred that the height h1 of the first conductive thin wire and the width v1 of the first conductive thin wire satisfy the relationship of the following formula (Y1): Formula (Y1) h1 / v1≧2.0

[0138] The line width and height of the conductive thin wires can be measured by the same measurement method as the above-mentioned method for measuring the line width and thickness of the metal thin wires. More detailed measurement methods will be described in the Examples below. The height of the conductive thin wires is the sum of the thickness of the metal thin wires and the height of the upper conductive layer. The line width and height of the conductive thin wires can be adjusted by the line width of the metal thin wires, the thickness of the resist pattern (resist film), the plating treatment time in the conductive thin wire formation step, etc.

[0139] Another preferred embodiment of a conductive film made of a resist pattern-containing laminate produced by the present production method is a conductive film having a substrate, first conductive thin wires arranged on one surface of the substrate, a first insulating film arranged on one surface of the substrate in an area where the first conductive thin wires are not arranged, and a second metal pattern arranged on the other surface of the substrate and made of second metal thin wires, wherein the line width w2 of the second metal thin wires and the thickness d of the substrate satisfy the relationship of the following formula (1): Formula (1) d / w2≧3.0 Preferred embodiments of the first conductive thin wires, first insulating film, second metal thin wires, and second metal pattern included in the conductive film are as described above.

[0140] It is preferable that the metal density of the lower region of the conductive thin wires on the substrate side of the conductive film is lower than the metal density of the upper region other than the lower region of the conductive thin wires. When the conductive thin wires have a lower metal density in the lower region and a higher metal density in the upper region, the bending resistance of the conductive film can be improved. Note that the above metal density means the weight of metal contained in a unit volume of the conductive thin wires.

[0141] Conductive thin wires having a lower metal density in the lower region than in the upper region can be formed, for example, by performing the above steps B to E in this order to form thin metal wires, and then forming an upper conductive layer by plating, or by forming thin metal wires using a metal with a lower density (such as copper or a copper alloy), and then forming an upper conductive layer using a metal with a higher density (such as silver alone).

[0142] The metal density of the conductive thin wires in the conductive film can be determined by, for example, measuring the relative value of the metal content in the cross section of the conductive thin wires using time-of-flight secondary ion mass spectrometry (TOF-SIMS). By measuring the metal density of the conductive thin wires, it is possible to distinguish between the upper and lower regions of the conductive thin wires.

[0143] Specifically, the conductive film is cut using a microtome or the like in a direction intersecting the extending direction of the conductive thin wires, and the local concentration of the metal at the cut surface of the obtained conductive thin wires is analyzed by the TOF-SIMS method. ＋ and In ＋This method can measure the amount of compounds present on the surface of a solid sample by detecting secondary ions, such as molecular ions and fragment ions, emitted from molecules in the sample upon irradiation with primary ions such as ions of 1000 and 1000 mercury. While both positive and negative ions can be detected using TOF-SIMS, in this embodiment, positive ions are selected, and a total secondary ion image with a mass of 0 to 1000 amu (atom mass unit) is measured in raw data format in the same region of the cross section of the conductive thin wire. It is preferable to use an electron gun (flood gun) to neutralize charge buildup on the sample surface during measurement. When analyzing the local concentration of the conductive thin wire, the cross section of the conductive thin wire is divided into minute regions (apertures) with diameters of approximately 10 to 50 nm, and the signal intensity derived from the metal is measured at this aperture size. By mapping the signal intensity derived from the metal in the measured minute regions across the entire cross section of the conductive thin wire, a composition distribution can be obtained that indicates the relative values ​​of the local concentration of the metal present at each position on the cross section of the conductive thin wire, with the thickness and width directions as coordinates. Based on the difference in local metal concentration shown in the obtained composition distribution, the lower region and the upper region of the conductive thin wire can be distinguished. When the film thickness of the conductive thin wire is thin (for example, when it is several times the aperture), it is preferable to change the cutting direction of the conductive film from the normal direction (90°) to the main surface of the conductive film to an oblique direction (1 to less than 90° with respect to the main surface of the conductive film) to increase the area of ​​the cut surface, thereby improving the mapping resolution within the conductive thin wire. Furthermore, when the conductive thin wire contains multiple types of metals, the lower region and the upper region can be distinguished by measuring the local metal concentration for each type of metal using TOF-SIMS and calculating the sum of the local concentrations of each metal.

[0144] The first insulating film and the second insulating film of the conductive film are preferably transparent. In this specification, "transparent" means that the average transmittance of visible light having a wavelength of 400 to 700 nm is 80% or more. The average transmittance of the insulating film for visible light is preferably 90% or more. There is no particular upper limit, and it is, for example, 99% or less. The transmittance can be measured using a spectrophotometer.

[0145] The resist pattern-containing laminate and the conductive film produced by the present production method may have other components in addition to the above-mentioned base material, conductive thin wires (thin metal wires and upper conductive layer), and insulating film. Examples of other components that the resist pattern-containing laminate and the conductive film may have include a conductive part having a configuration different from that of the conductive thin wires.

[0146] Specific examples of embodiments of the present production method will be described below with reference to the drawings. Note that the present production method, the resist pattern-containing laminate produced by the present production method, and the conductive film are not limited to the specific embodiments described below.

[0147] [First Embodiment] The method for producing a resist pattern-containing laminate according to the first embodiment includes at least steps (1-1) to (1-5). (1-1) A first exposure step of irradiating a laminate having, in this order, a second metal pattern, a substrate, a first metal pattern, and a first resist film with light from the other surface side of the substrate to expose the first resist film. (1-2) A first development step of developing the exposed first resist film to form a first resist pattern. (1-3) A second resist film formation step of forming a second resist film on the other surface side of the substrate (the surface side on which the second metal pattern is disposed) after the first development step (1-2). (1-4) A second exposure step of irradiating the second resist film with light from one surface side of the substrate, i.e., the surface side on which the first metal pattern is disposed, to expose the second resist film. (1-5) A second development step of developing the exposed second resist film to form a second resist pattern, thereby obtaining a resist pattern-containing laminate.

[0148] The manufacturing method according to this embodiment preferably includes the following first resist film formation step (1-0) before step (1-1): (1-0) A first resist film formation step of forming a first resist film on the surface of the substrate on which the first metal pattern is disposed in a precursor laminate having a second metal pattern, a substrate, and a first metal pattern in this order, to obtain a laminate.

[0149] Furthermore, the manufacturing method according to this embodiment preferably includes the following conductive thin wire forming step (1-6) after step (1-5): (1-6) A conductive thin wire forming step in which an upper conductive layer is formed on each of the first thin metal wires exposed in the openings of the first resist pattern and the second thin metal wires exposed in the openings of the second resist pattern to obtain the first conductive thin wires and the second conductive thin wires. That is, the manufacturing method according to this embodiment more preferably includes the above steps (1-0) to (1-6).

[0150] The manufacturing method of this embodiment, which includes the above steps (1-0) to (1-6) in this order, will be described with reference to the drawings. Figures 8A and 8B are drawings for explaining the manufacturing method of this embodiment. Figure 8A is a drawing for explaining the second resist film forming step (1-3), and Figure 8B is a drawing for explaining the second developing step (1-4).

[0151] In the first resist film forming step (1-0), a first resist film 40 is formed on one surface 21 of a substrate 20 of the precursor laminate 10 shown in Fig. 5, thereby obtaining the laminate 11 shown in Fig. 1. In the first exposure step (1-1), the laminate 11 shown in Fig. 1 is irradiated with light from the other surface 22 of the substrate 20, thereby exposing the first resist film 40, thereby obtaining the laminate 12 shown in Fig. 2. In the first development step (1-2), the laminate 12 shown in Fig. 2 is subjected to a development treatment, and the unexposed portion 42 of the first resist film 40 is removed, thereby obtaining the laminate 13 shown in Fig. 3.

[0152] In the second resist film forming step (1-3), a second resist film 50 is formed on the laminate 13 shown in Fig. 3 so as to cover the other surface 22 of the substrate 20 on which the second fine metal wires 32 are arranged, thereby obtaining the laminate 14 shown in Fig. 8A. The laminate (resist pattern-containing laminate) 14 shown in Fig. 8A has the substrate 20, the first fine metal wires 31 arranged on one surface 21 of the substrate 20, the first resist pattern 43 arranged on one surface 21 of the substrate and in an area where the first fine metal wires 31 are not arranged, the second fine metal wires 32 arranged on the other surface 22 of the substrate 20, and the second resist film 50 arranged on the second fine metal wires 32.

[0153] In the second exposure step (1-4), the laminate 14 shown in FIG. 8A is irradiated with light from one surface 21 of the substrate 20, exposing the second resist film 50, and obtaining the laminate (resist pattern-containing laminate) 15 shown in FIG. 8B. The laminate (resist pattern-containing laminate) 15 shown in FIG. 8B includes the substrate 20, the first metal fine wires 31 arranged on one surface 21 of the substrate 20, the first resist pattern 43 arranged on one surface 21 of the substrate and in an area where the first metal fine wires 31 are not arranged, the second metal fine wires 32 arranged on the other surface 22 of the substrate 20, and the exposed portion 51 and unexposed portion 52 of the second resist film 50 (see FIG. 8A) arranged on the second metal fine wires 32. In this way, the second exposure step (1-4) results in an exposed portion 51 in the area where the second metal fine wires 32 are not arranged on the other surface 22, and an unexposed portion 52 in the area where the second metal fine wires 32 are arranged. In this way, the second metal pattern formed by the second thin metal wires 32 functions as a mask for the second resist film 50, and exposed portions 51 and unexposed portions 52 having shapes corresponding to the second metal pattern are formed.

[0154] In the second development step (1-5), the unexposed portions 52 of the laminate 15 shown in Fig. 8B are removed, and a second resist pattern 53 having a shape that covers only the areas where the second thin metal wires 32 are not arranged is formed, thereby obtaining the laminate 16 shown in Fig. 6. Note that the areas that were occupied by the unexposed portions 52 of the laminate 15, i.e., the areas where the second thin metal wires 32 are arranged on the other surface 22 of the substrate 20, become openings 54 in the laminate 16. In the conductive thin wire formation step (1-6), upper conductive layers 61 and 62 are formed in the openings 44 and 54 of the laminate 16 shown in Fig. 6, respectively, thereby obtaining the resist pattern-containing laminate 1 (conductive film) shown in Fig. 7.

[0155] Second Embodiment A method for producing a resist pattern-containing laminate according to a second embodiment includes the following steps (2-0) to (2-6): (2-0) a second resist film forming step of forming a second resist film on the surface of the substrate on which the second metal pattern is disposed, in a precursor laminate having a second metal pattern, a substrate, and a first metal pattern in this order, to obtain a laminate; (2-1) a second exposure step of irradiating the second resist film with light from one surface side of the substrate to expose the second resist film; (2-2) a second development step of developing the exposed second resist film to form a second resist pattern and obtain a resist pattern-containing laminate; (2-3) a first resist film forming step of forming a first resist film on one surface side of the substrate after the second development step (2-2); and (2-4) a first exposure step of irradiating the first resist film with light from the other surface side of the substrate to expose the first resist film. (2-5) a first developing step of developing the exposed first resist film to form a first resist pattern, and (2-6) a conductive thin wire forming step of forming an upper conductive layer on each of the first thin metal wires exposed in the openings of the first resist pattern and the second thin metal wires exposed in the openings of the second resist pattern, thereby obtaining first conductive thin wires and second conductive thin wires.

[0156] The manufacturing method of this embodiment, which includes the above steps (2-0) to (2-6) in this order, will be described with reference to the drawings. Figures 9A to 9E are diagrams for explaining the manufacturing method of this embodiment. Figure 9A is a diagram for explaining the second resist film formation step (2-0), Figure 9B is a diagram for explaining the second exposure step (2-1), and Figure 9C is a diagram for explaining the second development step (2-2). Figure 9D is a diagram for explaining the first resist film formation step (2-3), and Figure 9E is a diagram for explaining the first exposure step (2-4). The components in Figures 9A to 9E are the same as the components with the same reference numerals in Figures 1 to 3 and 4 to 8B, and therefore, description of each component will be omitted.

[0157] In the second resist film forming step (2-0), a second resist film 50 is formed on the other surface 22 of the substrate 20 of the precursor laminate 10 shown in FIG. 5, thereby obtaining a laminate 71 shown in FIG. 9A. In the second exposure step (2-1), the laminate 71 shown in FIG. 9A is irradiated with light from one surface 21 of the substrate 20, exposing the second resist film 50, thereby obtaining a laminate 72 shown in FIG. 9B. In the second development step (2-2), the laminate 72 shown in FIG. 9B is subjected to a development process, and the unexposed portions 52 of the second resist film 50 are removed, thereby obtaining a laminate 73 shown in FIG. 9C. In the first resist film forming step (2-3), a first resist film 40 is formed on the laminate 73 shown in FIG. 9C so as to cover the other surface 21 of the substrate 20 on which the first thin metal wires 31 are disposed, thereby obtaining a laminate 74 shown in FIG. 9D. In the first exposure step (2-4), light is irradiated onto the laminate 74 shown in Fig. 9D from the other surface 22 of the substrate 20, exposing the first resist film 40 and obtaining the laminate 75 shown in Fig. 9E. In the first development step (2-5), a development process is performed on the laminate 75 shown in Fig. 9E, and the unexposed portions 42 of the first resist film 40 are removed, thereby obtaining the laminate 16 shown in Fig. 6. In the conductive thin wire formation step (2-6), upper conductive layers 61 and 62 are formed in the openings 44 and 54 of the laminate 16 shown in Fig. 6, respectively, thereby obtaining the resist pattern-containing laminate 1 (conductive film) shown in Fig. 7.

[0158] [Third Embodiment] A method for producing a resist pattern-containing laminate according to a third embodiment includes the following steps (3-0) to (3-7): (3-0) a first resist film forming step of forming a first resist film on the surface of a precursor laminate having a second metal pattern, a substrate, and a first metal pattern in this order, to obtain a laminate; (3-1) a first exposure step of irradiating the first resist film with light from the other surface of the substrate to expose the first resist film; (3-2) a first development step of developing the exposed first resist film to form a first resist pattern and obtain a resist pattern-containing laminate; (3-3) a first conductive thin wire forming step of forming an upper conductive layer on the first metal thin wires exposed in the openings of the first resist pattern to obtain first conductive thin wires; and (3-4) a second resist film forming step of forming a second resist film on the other surface of the substrate after the first conductive thin wire forming step (3-3). (3-5) A second exposure step of irradiating the second resist film with light from one surface side of the base material to expose the second resist film. (3-6) A second development step of developing the exposed second resist film to form a second resist pattern. (3-7) A second conductive thin wire formation step of forming an upper conductive layer on the second metal thin wires exposed in the openings of the second resist pattern to obtain second conductive thin wires.

[0159] The manufacturing method of this embodiment, which includes the above steps (3-0) to (3-7) in this order, will be described with reference to the drawings. Figures 10A to 10D are diagrams for explaining the manufacturing method of this embodiment. Figure 10A is a diagram for explaining the first conductive thin wire formation step (3-3), Figure 10B is a diagram for explaining the second resist film formation step (3-4), Figure 10C is a diagram for explaining the second exposure step (3-5), and Figure 10D is a diagram for explaining the second development step (3-6). The components in Figures 10A to 10D are the same as the components assigned the same reference numerals in Figures 1 to 3 and 4 to 9E, and therefore description of each component will be omitted.

[0160] The first resist film formation step (3-0), the first exposure step (3-1), and the first development step (3-2) are the same as steps (1-0) to (1-2) of the first embodiment, and the first development step (3-2) results in the laminate 13 shown in FIG. 3 . In the first conductive thin wire formation step (3-3), an upper conductive layer 61 is formed in the openings 44 of the laminate 13 shown in FIG. 3 , resulting in the resist pattern-containing laminate 81 (conductive film) shown in FIG. 10A . In the second resist film formation step (3-4), a second resist film 50 is formed on the laminate 81 shown in FIG. 10A so as to cover the other surface 22 of the substrate 20 on which the second metal thin wires 32 are disposed, resulting in the laminate 82 shown in FIG. 10B . In the second exposure step (3-5), the laminate 82 shown in FIG. 10B is irradiated with light from one surface 21 of the substrate 20, exposing the second resist film 50, resulting in the laminate 83 shown in FIG. 10C . In the second development step (3-6), the laminate 83 shown in Fig. 10C is developed to remove the unexposed portions 52 of the second resist film 50, thereby obtaining the laminate 84 shown in Fig. 10D. In the second conductive thin wire formation step (3-7), an upper conductive layer 62 is formed in the openings 54 of the laminate 84 shown in Fig. 10D, thereby obtaining the resist pattern-containing laminate 1 (conductive film) shown in Fig. 7.

[0161] <Uses of Conductive Film> The conductive film made of the resist pattern-containing laminate obtained by the present production method can be used in a variety of applications, including touch panels (or touch panel sensors), semiconductor chips, various electric wiring boards, FPCs (Flexible Printed Circuits), COFs (Chip on Film), TABs (Tape Automated Bonding), antennas, multilayer wiring boards, and motherboards. Among these, the conductive film is preferably used in a touch panel (capacitive touch panel). In a touch panel having a conductive film, the conductive thin wires described above can effectively function as detection electrodes. When the conductive film is used in a touch panel, examples of display panels used in combination with the conductive film include liquid crystal panels and OLED (Organic Light Emitting Diode) panels, and a combination with an OLED panel is preferred.

[0162] Other uses of the conductive film include, for example, electromagnetic wave shielding that blocks electromagnetic waves such as radio waves and microwaves (ultra-high frequency waves) generated by electronic devices such as personal computers and workstations and prevents static electricity. Such electromagnetic wave shielding can be used not only in personal computers but also in electronic devices such as video recording equipment and electronic medical devices. The conductive film can also be used for transparent heating elements.

[0163] The conductive film may be used in the form of a laminate including the conductive film and other components such as an adhesive sheet and a release sheet during handling and transportation. The release sheet functions as a protective sheet to prevent scratches on the conductive film during transportation of the laminate. The conductive film may also be handled in the form of a composite including, for example, the conductive film, the adhesive sheet, and the protective layer in this order.

[0164] The present invention is basically configured as described above. The present invention is not limited to the above-described embodiment, and various improvements and modifications may be made without departing from the spirit and scope of the present invention.

[0165] The present invention will be described in more detail below with reference to examples. The materials, amounts used, ratios, treatment details, treatment procedures, etc. shown in the following examples can be changed as appropriate without departing from the spirit of the present invention. Therefore, the scope of the present invention should not be construed as being limited by the examples shown below.

[0166] Resist pattern-containing laminates were produced in Examples 1 to 9 and Comparative Example 1, and the evaluation items were show-through and fine line shape. Examples 1 to 9 and Comparative Example 1 will be described below.

[0167] <Example 1> [Manufacturing of precursor laminate P] In Example 1, a precursor laminate having a substrate, a first metal pattern composed of a first metal thin wire arranged on one surface side of the substrate, and a second metal pattern composed of a second metal thin wire arranged on the other surface side of the substrate was manufactured by a photographic process according to the following manufacturing process (process P).

[0168] (Production of substrate) Pellets of polyethylene terephthalate (PET) resin were melt-extruded using a T-die, and the resulting molten film was placed on a cast roll and rapidly cooled to obtain an unstretched sheet having a thickness of 160 μm. Both ends of the unstretched sheet in the width direction were held by clips of a simultaneous biaxial stretching machine, and the unstretched sheet was simultaneously biaxially stretched to obtain a biaxially stretched film. The obtained biaxially stretched film was subjected to heat treatment, cooled, and wound up with a winder to obtain a PET film having a thickness of 12 μm.

[0169] (Formation of Undercoat Layer) The above-mentioned polymer latex-containing composition was applied to both surfaces of the obtained PET film to form an undercoat layer having a thickness of 0.05 μm. This treatment was carried out by roll-to-roll, and the following treatments (steps) were also carried out by roll-to-roll in the same manner. The roll width was 1 m and the length was 1000 m.

[0170] (Preparation of Silver Halide Emulsion) To the following solution 1, maintained at a temperature of 38°C and a pH (hydrogen ion exponent) of 4.5, 90% of each of the following solutions 2 and 3 were simultaneously added over 20 minutes with stirring to form 0.07 µm grain nuclei. Subsequently, the following solutions 4 and 5 were added to the mixture over 8 minutes, and the remaining 10% of the following solutions 2 and 3 were added over 2 minutes to grow the grains to 0.09 µm. Furthermore, 0.15 g of potassium iodide was added to the mixture, and the mixture was ripened for 5 minutes to complete the grain formation.

[0171] Solution 1: 750 mL water, 8.6 g gelatin, 3 g sodium chloride, 20 mg 1,3-dimethylimidazolidine-2-thione, 10 mg sodium benzenethiosulfonate, 0.7 g citric acid Solution 2: 300 mL water, 150 g silver nitrate Solution 3: 300 mL water, 38 g sodium chloride, 32 g potassium bromide, 5 mL potassium hexachloroiridate (III) (0.005% KCl 20% aqueous solution), 7 mL ammonium hexachlororhodate (0.001% NaCl 20% aqueous solution) Solution 4: 100 mL water, 50 g silver nitrate Solution 5: 100 mL water, 13 g sodium chloride, 11 g potassium bromide, 5 mg ferrocyanide

[0172] The particles were then washed with water by a conventional flocculation method. Specifically, the temperature of the above-mentioned mixed solution was lowered to 35°C, and the pH of the mixed solution was lowered using sulfuric acid until the silver halide particles precipitated (pH was in the range of 3.6±0.2). Next, approximately 3 liters of the supernatant liquid was removed from the mixed solution (first water washing). Furthermore, 3 liters of distilled water was added to the mixed solution from which the supernatant liquid had been removed, and then sulfuric acid was added until the silver halide particles precipitated. Again, 3 liters of the supernatant liquid was removed from the mixed solution (second water washing). The same operation as the second water washing was repeated once more (third water washing), completing the washing and desalting process. After washing and desalting, the pH of the emulsion was adjusted to 6.4 and the pAg to 7.5. 2.5 g of gelatin, 10 mg of sodium benzenethiosulfonate, 3 mg of sodium benzenethiosulfinate, 15 mg of sodium thiosulfate, and 10 mg of chloroauric acid were then added to the emulsion, and the emulsion was chemically sensitized at 55°C to obtain the optimum sensitivity. Subsequently, 100 mg of 1,3,3a,7-tetraazaindene as a stabilizer and 100 mg of Proxel (trade name, manufactured by ICI Co., Ltd.) as a preservative were further added to the emulsion. The finally obtained emulsion was a silver iodochlorobromide cubic grain emulsion containing 0.08 mol % of silver iodide, with a silver chlorobromide ratio of 70 mol % of silver chloride and 30 mol % of silver bromide, an average grain size of 0.10 μm, and a coefficient of variation of 9%.

[0173] (Preparation of composition for forming photosensitive layer) 1,3,3a,7-tetraazaindene (1.2 × 10 －４ mol / mol Ag), hydroquinone (1.2 × 10 －２ mol / mol Ag), citric acid (3.0 x 10 －４A composition was obtained by adding 2,4-dichloro-6-hydroxy-1,3,5-triazine sodium salt (0.90 g / mol Ag), 2,4-dichloro-6-hydroxy-1,3,5-triazine sodium salt (0.90 g / mol Ag), and a trace amount of hardener. The pH of the composition was then adjusted to 5.6 with citric acid. A polymer latex containing a polymer (hereinafter also referred to as "Polymer 1") represented by the formula (P-1) below, a dispersant consisting of dialkylphenyl PEO (PEO is an abbreviation for polyethylene oxide) sulfate ester, and water (the ratio of the mass of the dispersant to the mass of Polymer 1 (mass of dispersant / mass of Polymer 1, in g / g) was 0.02, and the solids content was 22% by mass) was added to the above composition so that the ratio of the mass of Polymer 1 to the total mass of gelatin in the composition (mass of Polymer 1 / mass of gelatin, in g / g) was 0.25 / 1, thereby obtaining a polymer latex-containing composition. Here, in the polymer latex-containing composition, the ratio of the mass of gelatin to the mass of silver derived from silver halide (mass of gelatin / mass of silver derived from silver halide, unit: g / g) was 0.11. Furthermore, EPOXY RESIN DY 022 (trade name: manufactured by Nagase ChemteX Corporation) was added as a crosslinking agent. The amount of the crosslinking agent added was 0.09 g / m2 when the amount of the crosslinking agent in the silver halide-containing photosensitive layer described below was 0.09 g / m2. ２ The composition for forming a photosensitive layer was prepared in this manner. Polymer 1 was synthesized with reference to Japanese Patent Nos. 3,305,459 and 3,754,745.

[0174]

[0175] (Step A1, Step B1) Next, a composition for forming a silver halide-free layer and the above-mentioned composition for forming a photosensitive layer were simultaneously coated in layers on the surfaces of the undercoat layers formed on both surfaces of the PET film, to form a silver halide-free layer (antihalation layer) and a silver halide-containing photosensitive layer on the undercoat layers. The composition for forming a silver halide-free layer contained the above-mentioned polymer latex, gelatin, and a cyanine dye as a dye that is decolorized by a developer. The thickness of the silver halide-free layer was 2.0 μm, the mixing mass ratio of polymer 1 to gelatin in the silver halide-free layer (polymer 1 / gelatin) was 2 / 1, and the content of polymer 1 was 0.65 g / m ２ The optical density of the silver halide-free layer measured by the above-mentioned measurement method was about 1.0. The thickness of the silver halide-containing photosensitive layer was 2.0 μm, the mixture mass ratio of polymer 1 to gelatin in the silver halide-containing photosensitive layer (polymer 1 / gelatin) was 0.25 / 1, and the content of polymer 1 was 0.15 g / m ２ It was.

[0176] (Step C1) The photosensitive layer prepared above was irradiated with parallel light from a high-pressure mercury lamp as a light source through a lattice-shaped photomask, thereby simultaneously exposing the photosensitive layer formed on both sides of the substrate. A pattern-forming mask was used as the photomask. The photosensitive layer was exposed while the photomask was in contact with the photosensitive layer. The shape of the photomask and exposure conditions were set so that in the laminate formed after step F1 described below, a unit square lattice having openings with a side length L of 400 μm was formed, and the line width w of the metal thin wires was 4.0 μm. The exposed photosensitive layer was subjected to a development process by applying the developer described below and further treating with a fixer (product name: N3X-R for CN16X: manufactured by Fujifilm Corporation). The sample was then rinsed with pure water at 25°C and dried to obtain Sample A, which had thin wires containing metallic silver formed in a mesh pattern on both sides of the substrate. In sample A, a mesh pattern area (corresponding to the first metal pattern and the second metal pattern) measuring 10 cm x 10 cm was formed.

[0177] (Composition of Developer) The following compounds are contained in 1 liter (L) of developer: Hydroquinone 0.037 mol / L N-methylaminophenol 0.016 mol / L Sodium metaborate 0.140 mol / L Sodium hydroxide 0.360 mol / L Sodium bromide 0.031 mol / L Potassium metabisulfite 0.187 mol / L

[0178] The obtained sample A was immersed in warm water at 50° C. for 180 seconds, after which the water was removed with an air shower and the sample was allowed to dry naturally.

[0179] (Step D1) Sample A treated in step C1 was placed in a superheated steam treatment tank at 110°C and left to stand for 30 seconds to undergo superheated steam treatment. The steam flow rate at this time was 100 kg / h.

[0180] (Step E1) Sample A treated in step D1 was immersed in a hypochlorous acid-containing aqueous solution (25 ° C.) for 30 seconds. Sample A was removed from the aqueous solution, and sample A was immersed in warm water (liquid temperature: 50 ° C.) for 120 seconds to be washed. After this, the water was removed with an air shower and allowed to dry naturally. As the hypochlorous acid-containing aqueous solution, a diluted solution prepared by diluting bleach (trade name "Haiter") manufactured by Kao Corporation by 2 times was used.

[0181] (Step F1) Sample A obtained in step E1 was subjected to a calendering treatment at a pressure of 30 kN using a calendering device consisting of a combination of a metal roller and a resin roller. The calendering treatment was carried out at room temperature.

[0182] The above process yielded a precursor laminate P having a PET film substrate, a first metal pattern composed of a first thin metal wire arranged on one surface of the PET film, and a second metal pattern composed of a second thin metal wire arranged on the other surface of the PET film. The line width w1 of the first thin metal wire and the line width w2 of the second thin metal wire in the obtained precursor laminate P were measured using a microscope "VHX-5000" manufactured by Keyence Corporation. The line widths of the formed thin metal wires are shown in the table below.

[0183] [First resist film formation step] A liquid negative resist material "ZPN1150" (manufactured by Zeon Corporation) was applied to almost the entire surface of one of the surfaces of the precursor laminate P obtained in step F1 to form a first resist film. This resulted in a laminate having, in this order, the first resist film arranged on the first metal pattern, the first metal pattern, the substrate, and the second metal pattern.

[0184] [First Exposure Step] Subsequently, for the laminate obtained in the first resist film formation step, a g-line having a wavelength of 436 nm was irradiated onto the first resist film from the other surface side of the substrate on which the second metal pattern was arranged, using an ultraviolet exposure device. This resulted in an exposure process in which the first resist film was exposed using the first metal pattern as a self-aligned mask pattern. In the exposure process, 320 mJ / cm ２ After exposure to ultraviolet light at an exposure dose of 1000 ppm, PEB (post-exposure bake) was carried out at 90° C. for 1 minute.

[0185] [First Development Step] After the first exposure step, the first resist film that had been subjected to the exposure treatment and PEB was subjected to a 1-minute development treatment using a developer ("NMD-3" manufactured by Tokyo Ohka Kogyo Co., Ltd.) to remove the unexposed portions of the first resist film. The laminate was then washed with water to form a first resist pattern. This resulted in a sample B (resist pattern-containing laminate) having a substrate, a first metal pattern disposed on one surface side of the substrate, a first resist pattern disposed on one surface side of the substrate in an area where the first metal pattern was not disposed, and a second metal pattern disposed on the other surface side of the substrate. The shape of the openings in the first resist pattern was approximately the same as the shape of the mesh pattern of the first metal pattern. Furthermore, the opening width of the openings in the formed first resist pattern was approximately the same as the line width of the first thin metal wires that constitute the mesh pattern of the first metal pattern.

[0186] [Second resist film formation step] Subsequently, a liquid negative resist material "ZPN1150" was applied to almost the entire surface of the other surface of the substrate of Sample B obtained in the first development step, the surface on which the second metal pattern was disposed, to form a second resist film. This resulted in a laminate having the substrate, the first metal pattern, the first resist pattern, the second metal pattern, and the second resist film disposed on the second metal pattern.

[0187] [Second Exposure Step] For the laminate obtained in the second resist film forming step, a UV exposure device was used to irradiate the second resist film with g-line light having a wavelength of 436 nm from one surface side on which the first metal pattern and the first resist pattern of the substrate were arranged. This resulted in an exposure process in which the second resist film was exposed using the second metal pattern as a self-aligned mask pattern. In the exposure process, a 320 mJ / cm ２ After exposure to ultraviolet light at an exposure dose of 1000 ppm, PEB (post-exposure bake) was carried out at 90° C. for 1 minute.

[0188] [Second Development Step] After the second exposure step and PEB, the exposed second resist film was developed for 1 minute using the developer to remove the unexposed portions of the second resist film, and then the laminate was washed with water to form a second resist pattern. This resulted in a sample C having a substrate, a first metal pattern, a first resist pattern, a second metal pattern disposed on the other surface side of the substrate, and a second resist pattern disposed on the other surface side of the substrate in an area where the second metal pattern was not disposed. The shape of the openings in the second resist pattern in sample C was approximately the same as the mesh pattern of the second metal pattern. Furthermore, in sample C, the opening width of the openings in the formed second resist pattern was approximately the same as the line width of the second thin metal wires constituting the mesh pattern of the second metal pattern.

[0189] [Conductive Thin Wire Forming Process] Sample C obtained in the second development process was immersed in plating solution A (30°C), which will be described later. Sample C was then removed from plating solution A, and the removed sample C was then immersed in warm water (liquid temperature: 50°C) for 120 seconds to wash and remove the plating solution adhering to sample C. As a result, a first plating film (first upper conductive layer) and a second plating film (second upper conductive layer) were formed on the first metal pattern and the second metal pattern, respectively, using each metal pattern as a seed layer. In the conductive thin wire forming process, the time for immersing sample C in plating solution A was adjusted so that the thicknesses of the first plating film and the second plating film were 4.0 μm. The composition of plating solution A (total volume: 1200 mL) used is shown below. The amount of potassium carbonate (manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.) added was adjusted so that the pH of plating solution A was 9.5. The following components of plating solution A were all manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.

[0190] (Composition of plating solution A) AgNO ３8.8 g, sodium sulfite 72 g, sodium thiosulfate pentahydrate 66 g, potassium iodide 0.004 g, citric acid 12 g, methylhydroquinone 3.67 g, potassium carbonate (prescribed amount), water (remainder)

[0191] Through the above steps, a resist pattern-containing laminate (conductive film) of Example 1 was produced, which included a substrate, first conductive thin wires, a first resist pattern, a second conductive thin wire, and a second resist pattern. Here, the first conductive thin wires were composed of a first metal pattern and a first plating film and were arranged on one surface of the substrate, and the first resist pattern (first insulating film) was arranged in an area of ​​the one surface of the substrate where the first conductive thin wires were not arranged. Furthermore, the second conductive thin wires were composed of a second metal pattern and a second plating film and were arranged on the other surface of the substrate, and the second resist pattern (second insulating film) was arranged in an area of ​​the other surface of the substrate where the second conductive thin wires were not arranged.

[0192] Examples 2 to 3, Comparative Example 1 Resist pattern-containing laminates of Examples 2 to 3 and Comparative Example 1 were produced in the same manner as in Example 1, except that in the production process of the base material, the thickness of the PET film used as the base material was changed to the thicknesses shown in the tables below by adjusting the thickness of the molten film formed by melt extrusion and the stretching ratio of the simultaneous biaxial stretching.

[0193] Examples 4 to 5 Resist pattern-containing laminates of Examples 4 and 5 were produced in the same manner as in Example 1, except that the exposure amount was changed by adjusting the exposure time for exposing the photosensitive layer in step C1, and the line width w1 of the first metal pattern and the line width w2 of the second metal pattern were changed to the line widths w shown in the table below.

[0194] Examples 6 to 7 The resist pattern-containing laminates of Examples 6 and 7 were produced in the same manner as in Examples 4 and 5, except that in the first resist film-forming step, a negative dry film resist ("Sunfort" manufactured by Asahi Kasei Microdevices Corporation) was laminated over substantially the entire surface of one of the surfaces of the precursor laminate P to form a first resist film, and in the second resist film-forming step, the dry film resist was laminated over substantially the entire surface of the other surface of the base material of Sample C obtained in the first developing step to form a second resist film.

[0195] Example 8 In Example 8, a precursor laminate was produced by a subtractive method according to the following production process (Process Q). First, a substrate was prepared in the same manner as in Example 1, comprising a 12 μm-thick PET film with a 0.05 μm-thick undercoat layer provided on both surfaces. Next, copper oxide films were formed as adhesion layers on both surfaces of the prepared substrate. In this case, copper was used as the target, and a mixed gas of oxygen gas (flow rate: 90 sccm) and argon gas (flow rate: 270 sccm) was introduced into the sputtering apparatus, while the pressure inside the film-forming chamber was set to 0.4 Pa and the power density was set to 1.7 W / cm. ２ The sputtering film formation was carried out under the conditions of a roll temperature during film formation of 90° C. The thickness of the obtained copper oxide film was 20 nm.

[0196] Next, a copper film was formed on the copper oxide film on both surfaces of the substrate using copper as a target, while argon gas (flow rate: 270 sccm) was introduced into the sputtering apparatus under the conditions of a deposition chamber pressure of 0.4 Pa and a power density of 4.2 W / cm. ２Sputtering film formation was performed under the following conditions: a roll temperature during film formation: 90°C. In the laminate thus obtained, the thickness of each copper film was 300 nm. After the copper film was formed, an anti-rust treatment was performed on the copper film, and the copper film was patterned by photolithography. During this process, positive resist was sequentially applied to each copper film to a thickness of 2 μm. Next, two glass photomasks with a mesh pattern of 4.0 μm line width corresponding to the mesh pattern shown in FIG. 4 were prepared. Next, with the two glass photomasks placed on the resist films on both surfaces, each copper film was irradiated with a metal halide lamp for simultaneous double-sided exposure. The laminate with the resist films on both surfaces was then immersed in a 3% aqueous sodium hydroxide solution for development, yielding a resist film having a pattern corresponding to the mesh pattern shown in FIG. 4. Using the obtained resist film as a mask, the copper oxide film and the copper film were etched using a 5% aqueous ferric chloride solution, thereby patterning the copper oxide film and the copper film disposed on both surfaces of the substrate. Finally, the resist films remaining on both surfaces of the substrate were peeled off, and metal patterns (first metal pattern and second metal pattern) were formed on both surfaces of the substrate.

[0197] Through the above steps, a precursor laminate Q was obtained, which had a substrate, a first metal pattern composed of a first metal thin wire arranged on one surface side of the substrate, and a second metal pattern composed of a second metal thin wire arranged on the other surface side of the substrate.

[0198] A resist pattern-containing laminate of Example 8 having a substrate, first conductive thin wires, a first resist pattern (first insulating film), second conductive thin wires, and a second resist pattern (second insulating film) was produced according to the method described in Example 1, except that in the first resist film forming step, precursor laminate Q was used instead of precursor laminate P. The line widths of the thin metal wires in the obtained precursor laminate Q are shown in the table below.

[0199] Example 9 In Example 9, a precursor laminate was produced by inkjet printing using a conductive ink according to the following production process (Process R): First, in the same manner as in Example 1, a substrate was prepared, which was a 12 μm-thick PET film having 0.05 μm-thick undercoat layers provided on both surfaces thereof.

[0200] Next, 100 mL of approximately 5% by mass aqueous sulfuric acid solution was added to 60 g of dendritic electrolytic copper powder (manufactured by Mitsui Mining & Smelting Co., Ltd., product name "MF-D2," diameter 10 μm) as washing water. The mixture was stirred at 20°C for 10 minutes, filtered, and then subjected to acid washing. Washing was then repeated until the filtrate became neutral. Specifically, acid washing was performed six times using a total of 3 L of washing water. The acid-washed raw copper powder was then transferred to a 1 L plastic container, and an aqueous solution consisting of 31.5 g of ammonium carbonate, 63 g of EDTA, and 250 g of water was added thereto to prepare a copper dispersion. An aqueous solution consisting of 5.25 g of silver nitrate and 32.4 g of water was then added to this copper dispersion with stirring to perform silver displacement plating (first plating step). The dispersion after silver displacement plating was then filtered, washed, and dried to obtain a raw copper powder (first silver-plated copper powder) plated with 5 parts by mass of silver per 100 parts by mass of the raw copper powder. The 50% particle size (D50%) of the first silver-plated copper powder was measured using a Microtrac HRA (manufactured by Nikkiso Co., Ltd.) and found to be 8.39 μm. The tap density of the first silver-plated copper powder was measured by the following method and found to be 2.99 g / cm. ３ It was.

[0201] (Method of measuring tap density) (i) 100 g of sample (first silver-plated copper powder) is gently dropped into a 100 mL measuring cylinder using a funnel. (ii) The measuring cylinder is placed on a tap density measuring instrument and dropped 600 times at a drop distance of 20 mm and a speed of 60 times / min to compress the sample. The volume of the sample after compression is measured. (iii) The volume (cm) after compression ３ The tap density (g / cm) of the sample was calculated by dividing the mass (g) of the sample by the ３ ) is calculated.

[0202] Next, 0.1 parts by mass of stearic acid as a lubricant was added to 100 parts by mass of the first silver-plated copper powder, and the mixture was crushed in a ball mill to obtain crushed powder. The crushing conditions were 20°C, a rotation speed of 30 revolutions per minute, and a time period of 60 minutes. The 50% particle size (D50%) of the crushed powder obtained was measured using a Microtrac HRA (manufactured by Nikkiso Co., Ltd.) and found to be 8.04 μm. The tap density of the crushed powder measured by the above method was 3.85 g / cm. ３ It was.

[0203] The crushed powder was then transferred to a 1 L plastic container and subjected to silver displacement plating (second plating step) in the same manner as in the first plating step described above, to obtain silver-plated copper powder. In the second plating step, 5 parts by mass of silver was plated per 100 parts by mass of raw copper powder. The finally obtained silver-plated copper powder was obtained by plating 10 parts by mass of silver per 100 parts by mass of raw copper powder.

[0204] The above-mentioned silver-plated copper powder (100 parts by mass) was premixed with a polyester resin (manufactured by Toyobo Co., Ltd., product name "Vylon 550," 18 parts by mass as solids) as a binder resin, a curing agent (blocked isocyanate, manufactured by Nippon Polyurethane Industry Co., Ltd., product name "Coronate 2516," 4.5 parts by mass as solids), and a solvent, butyl cellosolve acetate (BCA, 286 parts by mass), to allow the silver-plated copper powder and other components to blend together. This premix was then dispersed using a three-roll mill to obtain a conductive ink with a solids content of 30% by mass.

[0205] The conductive ink was filled into an ink cartridge of an inkjet recording device (product name "DMP-2831", manufactured by FUJIFILM Dimatix). The substrate was fixed to the inkjet recording device, and the conductive ink was ejected onto one surface of the substrate to form a pattern corresponding to the mesh pattern shown in FIG. 4. Next, the conductive ink was ejected onto the other surface of the substrate to form a pattern corresponding to the mesh pattern shown in FIG. 4, and the substrate was then heated at 120°C for 30 minutes using a hot plate. This resulted in a precursor laminate R having a substrate, a first metal pattern composed of first thin metal wires arranged on one surface of the substrate, and a second metal pattern composed of second thin metal wires arranged on the other surface of the substrate. The line widths of the thin metal wires in the resulting precursor laminate R are shown in the table below.

[0206] A resist pattern-containing laminate of Example 9 having a substrate, a first conductive thin wire, a first resist pattern (first insulating film), a second conductive thin wire, and a second resist pattern (second insulating film) was produced according to the method described in Example 1, except that the precursor laminate R was used instead of the precursor laminate P in the first resist film forming step.

[0207] <Measurements> [Width and Height of Conductive Thin Wires] The resist pattern-containing laminate produced in each example was cut using an ultramicrotome along a plane perpendicular to the direction in which the conductive thin wires extended to expose the cut surface. Next, as a pretreatment, carbon was vapor-deposited to a thickness of 10 to 20 nm on the exposed cut surface to prepare a test piece for cross-sectional observation. The cut surface of the obtained test piece was observed using a scanning electron microscope (SEM, manufactured by Hitachi High-Technologies Corporation), and the line width and height of the conductive thin wires were measured from the obtained observation image. When the line width of the conductive thin wires varied depending on the height in a single observation image, the maximum line width was used as the representative value of the line width in that observation image. Each resist pattern-containing laminate was cut at 10 different positions of the conductive thin wires, and the line width and height of the conductive thin wires were measured from the obtained observation image of the cut surface. The line width and height of the conductive thin wires were calculated by arithmetically averaging the measured values ​​at 10 points.

[0208] Test pieces with exposed cut surfaces were prepared in the same manner for the resist pattern-containing laminates produced in each example, and the metal density of the conductive thin wires at the cut surfaces of the test pieces was measured using the above-mentioned TOF-SIMS method. As a result, it was confirmed that the conductive thin wires possessed by the resist pattern-containing laminates obtained in each example were arranged on the substrate side and had a lower region with a lower metal density and an upper region other than the lower region with a higher metal density. It was also confirmed that the lower region corresponded to the first fine metal wires or the second fine metal wires, and the upper region corresponded to the first upper conductive layer or the second upper conductive layer.

[0209] <Evaluation> Hereinafter, the method for evaluating the show-through and fine line shape of each resist pattern-containing laminate will be described.

[0210] [Bleed-through] The resist pattern-containing laminate produced in each example was cut using an ultramicrotome along a plane perpendicular to the extension direction of the second conductive thin wires to expose a cut surface including the width and thickness directions of the second conductive thin wires. Next, as a pretreatment, carbon was vapor-deposited to a thickness of 10 to 20 nm on the exposed cut surface to prepare a test piece for cross-sectional observation. The cut surface of the obtained test piece was observed using a scanning electron microscope (SEM, manufactured by Hitachi High-Technologies Corporation). The observation conditions were an acceleration voltage of 5 kV, backscattered electron mode, and 30,000x observation magnification. Furthermore, a region of the cut surface of the test piece that included at least one second conductive thin wire, the substrate, and the first resist pattern facing the second conductive thin wire across the substrate in the thickness direction was selected as the observation region. From the cross-sectional image obtained by observing the above observation region, the presence or absence of recesses was measured in the region of the first resist pattern facing the second conductive thin wire across the substrate in the thickness direction, and if recesses were present, their heights (depths in the thickness direction) were measured. For each resist pattern-containing laminate, test pieces having cut surfaces perpendicular to the second conductive thin wire were prepared according to the above method at 10 arbitrarily selected locations, and the presence or absence and heights of recesses in the region facing the second conductive thin wire in the thickness direction of the first resist pattern were measured using an SEM. The measured values ​​of the recess heights at a total of 10 points on the first resist pattern were arithmetically averaged, and the resulting average recess height was used to evaluate the show-through of the second metal thin wire onto the first resist film during exposure based on the following evaluation criteria. When no recesses were observed, the recess height was recorded as "0."

[0211] (Evaluation criteria for show-through) "A": No recesses were observed in any of the test pieces. "B": The average height of the recesses was more than 0% and less than 20% of the thickness of the first resist film. "C": The average height of the recesses was 20% or more of the thickness of the first resist film.

[0212] For each resist pattern-containing laminate, a test piece having a cut surface perpendicular to the first conductive thin wire was prepared according to the above-described method, and the presence or absence and height of recesses in the region of the second resist pattern facing the first conductive thin wire were measured using an SEM to evaluate the show-through of the first metal thin wire onto the second resist film during exposure. The evaluation results were the same as those for the show-through of the second metal thin wire onto the first resist film.

[0213] [Thin Line Shape] The surface of the resist pattern-containing laminate produced in each example, on which the first conductive thin wires and the first resist pattern were exposed, was observed using an optical microscope from the normal direction of the substrate, and a 200 μm long section of the first conductive thin wires was selected as the observation region along the direction in which the first conductive thin wires extended (hereinafter also referred to as the "length direction"). In the observation region, 10 positions were selected at equal intervals in the length direction, including both ends, and at each position in the length direction, the position corresponding to the midpoint of the line width of the first conductive thin wire was designated Pn (n = 1 to 10). Next, a line L connecting position P1 and position P10 was created, and distances a2 to a9 between each of positions P2 to P9 and the line L were measured. The maximum of the obtained distances a2 to a9 was designated as distance a. For each resist pattern-containing laminate, the observation region was selected at five different positions of the first conductive thin wire according to the above method, and the distance a was calculated. The values ​​of the distance a obtained at the five points were arithmetically averaged, and the thin line shape of the first conductive thin wires in the resist pattern-containing laminate was evaluated from the average value of the distance a obtained based on the following evaluation criteria: A shorter average value of the distance a indicates that the thin line shape of the first conductive thin wires has less distortion and is an excellent linear shape.

[0214] (Evaluation Criteria for Thin Wire Shape) "A": The average value of the distance a is 25% or less of the line width v1 of the first thin conductive wires. "B": The average value of the distance a is more than 25% of the line width v1 of the first thin conductive wires.

[0215] For each resist pattern-containing laminate, the surface on which the second conductive thin wires and the second resist pattern were exposed was observed according to the above-mentioned method, and the average value of the distance a relative to the line width v2 of the second conductive thin wires was calculated. As a result, the evaluation results for the thin line shape of the second conductive thin wires were the same as the evaluation results for the thin line shape of the first conductive thin wires.

[0216] <Results> The evaluation results of the above examples and comparative examples are shown in the table below. In the table, the "d [μm]" column under "Substrate" indicates the thickness (μm) of the substrate. The "w1 [μm]" and "d / w1" columns indicate the line width w1 (μm) of the first metal thin wire of the first metal pattern and the ratio of the thickness d of the substrate to the line width w1, respectively. The "v1 [μm]", "h1 [μm]", and "h1 / v1" columns indicate the line width v1 (μm) of the first conductive thin wire, the height h1 of the first conductive thin wire, and the ratio of the height h1 to the line width v1, respectively. The same applies to the "w2 [μm]", "d / w2", "v2 [μm]", "h2 [μm]", and "h2 / v2" columns. The "Precursor Laminate" column indicates the manufacturing process of the precursor laminate performed in each example. The "resist film" column indicates the manufacturing methods of the first resist film and the second resist film in the manufacture of each resist pattern-containing laminate. "Resist liquid" means that a resist film was formed by applying a liquid resist film-forming material, and "DFR" means that a resist film was formed by transferring a dry film resist to a substrate.

[0217]

[0218] The results in Table 1 confirm that the method for producing a resist pattern-containing laminate of the present invention suppresses show-through of the thin metal wires onto the resist film, making it possible to produce a resist pattern of a desired shape. On the other hand, the method for producing a resist pattern-containing laminate of Comparative Example 1, in which the line width w2 of the second thin metal wires and the thickness d of the substrate did not satisfy the relationship of formula (1), was unable to suppress show-through of the thin metal wires onto the resist film.

[0219] Comparison of Examples 4 to 7 with other Examples confirmed that when the line width w2 of the second thin metal wires is 3.0 μm or less, show-through of the thin metal wires onto the resist film can be further suppressed.

[0220] A comparison of Examples 6 and 7 with Examples 4 and 5 confirmed that the shape of the conductive thin wires was better when a resist film was formed by transferring a dry film resist onto the surface of the substrate on which the metal pattern was arranged.

[0221] Comparing Example 8 with Examples 1 and 9, it was confirmed that the shape of the conductive thin wires was better when a resist film was formed by transferring a dry film resist onto the surface of the substrate on which the metal pattern was arranged.

[0222] 1, 11, 12, 13, 14, 15, 16, 71, 72, 73, 74, 75, 81, 82, 83, 84 Laminate 10 Precursor laminate 20 Substrate 21, 22 Surface 30 Metallic thin wire 31 First metallic thin wire 32 Second metallic thin wire 33 Non-thin wire portion 40 First resist film 41, 51 Exposed portion 42, 52 Unexposed portion 43 First resist pattern 44, 54 Opening 50 Second resist film 53 Second resist pattern 61, 62 Upper conductive layer

Claims

1. A method for producing a resist pattern-containing laminate, comprising: a substrate; a first metal pattern disposed on one surface side of the substrate and composed of a first thin metal wire; a first resist film disposed on the first metal pattern; and a second metal pattern disposed on the other surface side of the substrate and composed of a second thin metal wire, the method comprising: an exposure step of irradiating light from the other surface side of the substrate to expose the first resist film; and a development step of developing the first resist film to form a first resist pattern and obtain a resist pattern-containing laminate, wherein the line width w2 of the second thin metal wire and the thickness d of the substrate satisfy the relationship of formula (1). Formula (1) d / w2≧3.0 2. The method for producing a resist pattern-containing laminate according to claim 1, further comprising, after the developing step, a second resist film forming step of forming a second resist film on the surface side of the base material on which the second metal pattern is arranged, a second exposure step of irradiating the second resist film with light from the one surface side of the base material to expose the second resist film, and a second developing step of developing the second resist film to form a second resist pattern and obtain a resist pattern-containing laminate, wherein the line width w1 of the first thin metal wire and the thickness d of the base material satisfy the relationship of formula (2): d / w1≧3.

0.

3. A method for producing a resist pattern-containing laminate as described in claim 2, further comprising a conductive fine wire forming step of forming an upper conductive layer on each of the exposed first metal fine wires and the exposed second metal fine wires of the resist pattern-containing laminate obtained in the second development step, thereby obtaining conductive fine wires.

4. The method for producing a resist pattern-containing laminate according to claim 3, wherein the conductive thin line forming step is a step of performing a plating process on the resist pattern-containing laminate obtained in the second developing step.

5. The method for producing a resist pattern-containing laminate according to claim 4, wherein the plating treatment is an electroless plating treatment.

6. The method for producing a resist pattern-containing laminate according to any one of claims 1 to 5, wherein the line width w2 of the second thin metal wire is 3.0 μm or less.

7. A method for producing a resist pattern-containing laminate according to any one of claims 1 to 5, wherein the line width w1 of the first thin metal wire is 3.0 μm or less.

8. A method for producing a resist pattern-containing laminate according to any one of claims 1 to 5, further comprising a first resist film formation step of forming, prior to the exposure step, a first resist film on a surface side of the substrate on which the first metal pattern is disposed, in a precursor laminate having the substrate, the first metal pattern, and the second metal pattern, to obtain the laminate.

9. A method for producing a resist pattern-containing laminate as described in claim 8, wherein the first resist film formation process is a process of transferring the resist film to the surface side of the substrate on which the first metal pattern is arranged, using a dry film resist having a temporary substrate and a resist film.

10. A method for producing a resist pattern-containing laminate according to claim 1, further comprising a first conductive thin wire forming step of forming a metal pattern on the first metal thin wire after the developing step to obtain a conductive thin wire.

11. A substrate comprising: a first conductive thin wire arranged on one surface side of the substrate; a first insulating film arranged on the one surface side of the substrate and arranged in an area where the first conductive thin wire is not arranged; a second conductive thin wire arranged on the other surface side of the substrate; and a second insulating film arranged on the other surface side of the substrate and arranged in an area where the second conductive thin wire is not arranged, wherein a line width v1 of the first conductive thin wire and a thickness d of the substrate satisfy the relationship of formula (X1); a height h1 of the first conductive thin wire and the line width v1 of the first conductive thin wire satisfy the relationship of formula (Y1); a line width v2 of the second conductive thin wire and a thickness d of the substrate satisfy the relationship of formula (X2); a height h2 of the second conductive thin wire and the line width v2 of the second conductive thin wire satisfy the relationship of formula (Y2); a metal density in a lower region of the first conductive thin wire on the substrate side is lower than a metal density in an upper region other than the lower region of the first conductive thin wire, A conductive film, wherein a metal density in a lower region of the second conductive thin wire on the substrate side is lower than a metal density in an upper region other than the lower region of the second conductive thin wire.

12. The conductive film according to claim 11, wherein the line width v2 of the second conductive thin line is 3.0 μm or less.

13. The conductive film according to claim 11 or 12, wherein the line width v1 of the first conductive thin wire is 3.0 μm or less.

14. A conductive film comprising: a substrate; a first conductive thin wire disposed on one surface side of the substrate; a first insulating film disposed on the one surface side of the substrate and disposed in an area where the first conductive thin wire is not disposed; and a second metal pattern disposed on the other surface side of the substrate and composed of a second metal thin wire, wherein a line width w2 of the second metal thin wire and a thickness d of the substrate satisfy the relationship of formula (1), a height h1 of the first conductive thin wire and a line width v1 of the first conductive thin wire satisfy the relationship of formula (Y1), and a metal density in a lower region of the first conductive thin wire on the substrate side is lower than a metal density in an upper region other than the lower region of the first conductive thin wire. Formula (1) d / w2≧3.0 Formula (Y1) h1 / v1≧2.0 15. The conductive film according to claim 14, wherein the line width w2 of the second metal pattern is 3.0 μm or less.

16. The conductive film according to claim 14 or 15, wherein the line width v1 of the first conductive thin wire is 3.0 μm or less.

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