A multilayer translucent microstrip patch antenna

Abstract

The invention relates to a multilayer microstrip patch antenna having high antenna properties and also showing optically transparent, translucent properties.

Description

[0001] A MULTILAYER TRANSLUCENT MICROSTRIP PATCH ANTENNA

[0002] TECHNICAL FIELD

[0003] The invention relates to a multilayer microstrip patch antenna having high antenna properties and optically transparent and, translucent properties.

[0004] PRIOR ART

[0005] Microstrip patch antennas are a type of microwave antenna that has a low profile, is lightweight, and is generally used on PCB (Printed Circuit Board). Microstrip patch antennas can be used in many applications such as wireless communication systems, satellites, mobile phones, Wi-Fi networks, radar systems and other microwave communication applications because of their use in a wide frequency domain and low- cost, easy-to-produce, and integrable properties. Advantages such as flexible design options and large bandwidth make microstrip patch antennas a popular choice. Microstrip patch antennas generally contain layers in the following order:

[0006] - Ground Layer: The bottom layer is the ground layer, which is the basic component of the microstrip patch antenna.

[0007] - Substrate (Base): The substrate layer is the middle layer of the microstrip patch antenna, which is made of dielectric material. The substrate supports the patch element and ensures the mechanical durability of the antenna.

[0008] - Patch Layer Element: This layer is located on the substrate.

[0009] Today, microstrip patch antennas are expected to have in non-visible designs and be functional for use in the manufacture of many household, healthcare, automotive and industrial products. For example, microstrip patch antennas are intended to have transparent, flexible and lightweight properties that can be integrated into glasses, eyeglasses, building claws, screens and lighting surfaces.

[0010] The biggest problem in using microstrip patch antennas in many applications is the obstacles that prevent them from having both high antenna properties and optically translucent-transparent properties. There are studies in the relevant technical field to eliminate these technical problems. One of these studies is the use of ultra-thin (having a thickness of about 10 nm) metal layers (Cu, Ag, Au, etc.) as the radiating component in microstrip patch antennas. However, reducing the thickness of the metal used as a radiating component increases the sheet resistance (abbreviated as Rs) due to electron scattering at the surface boundaries, and high Rs causes high ohmic losses. According to this technical teaching, there is a relationship between the thickness value and the conductivity of the metal used as the radiating component in microstrip patch antennas, and therefore between optical translucency and conductivity. Because of this relationship, experts in the relevant technical field propose arrangements regarding mesh or grid microstrip patch antennas. Since said the mesh or grid microstrip patch antennas use optically non-transparent metals, less effort is needed to improve their optical transparency. However, mesh antennas using traditional metals such as silver and copper are not suitable for applications where the quality of vision is unacceptable.

[0011] Another approach to make microstrip patch antennas transparent is the use of transparent conducting films (abbreviated as TCF) as the radiating component. The most commonly used transparent conducting film is indium tin oxide films. The use of said films increases the costs and causes technical drawbacks such as leakage at microwave frequencies without an effective loss of TCFs when used at lower thicknesses in contrast to conventional metals (Ag, Cu, Au) used as radiating components (skin depth of approximately 1 pm at microwave frequencies). Therefore, microstrip patch antennas comprising TCFs as radiating components exhibit relatively poor performance. Since microstrip antenna structures with this arrangement have technical problems in this way, sandwich (three-layer) structures of TCF / metal / TCF have been designed. By suppressing reflection from metal by TCF, not only optical transparency but also conductivity is improved because of the reduction in the equivalent resistance of the multilayer structure in series. In such three-layer sandwich structures, the increased thickness of the metal improves the antenna properties, but its optical transmittance decreases.

[0012] As a result, it has been determined that research and development activities should be conducted for the production of microstrip patch antennas that can exhibit high antenna properties for the relevant technical field and also exhibit optically translucent- transparent appearance properties. BRIEF DESCRIPTION OF THE INVENTION

[0013] In related technical fields, microstrip patch antennas can be used in products obtained in household, healthcare, automotive and other industrial technical fields. In particular, microstrip patch antennas with built-in internet features can be used to process data and establish communication in products.

[0014] Recently, microstrip patch antennas have been expected to be optically transparent- translucent due to the desire to conceal them in product designs and aesthetic concerns. Microstrip patch antennas with these optical properties are also expected to show high antenna properties in accordance with technological developments. For this reason, studies have been conducted in the relevant technical field to provide microstrip patch antennas with high antenna and optically transparent-translucent properties.

[0015] The primary objective of this invention is to provide a microstrip patch antenna with high antenna and optically translucent-transparent properties for use in civil or military technical fields. To achieve this, the microstrip patch antenna contains multiple layers that provide high metal density. The layers it contains and the position configurations of these layers provide the microstrip patch antenna with high antenna properties, while simultaneously providing optically transparent-translucent properties. Depending on these features, it is also possible to obtain microstrip patch antennas with concealable design in industrial products.

[0016] The microstrip patch antenna of the invention along with its characteristic configurations may have the following technical advantages:

[0017] Usability as a component in the technical field of communication for vehicle tracking or autonomous technologies in the automotive sector,

[0018] - Obtainment of final products that occupy less space in a design combinable with solar cells, due to savings in dimensions of the products.

[0019] Placement even in non-planar positions to achieve high antenna properties and also concealed position design by manufacturing the base from a flexible layer.

[0020] BRIEF DESCRIPTION OF DRAWINGS Figure 1 shows the representative view of the microstrip patch antenna of the invention, along with the elements of the base, patch layer and ground layer.

[0021] Figure 2 shows a representative view of the microstrip patch antenna of the invention, along with the patch layer comprising a functional layer and the layers contained in the ground layer.

[0022] Figure 3 shows the representative view of the microstrip patch antenna of the invention, along with the patch layer comprising two functional layers and the layers contained in the ground layer.

[0023] Figure 4 shows the representative view of the microstrip patch antenna of the invention, along with the patch layer comprising three functional layers and the layers contained in the ground layer.

[0024] Figure 5 shows the views of the analyzes, performed with the Scanning Electron Microscope, of microstrip patch antennas with the MLA-1 , MLA-2 and MLA-3 reference designs.

[0025] Figure 6 shows the transmittance measurement curves of microstrip patch antennas with reference designs MLA-1 , MLA-2, and MLA-3.

[0026] BRIEF DESCRIPTION OF REFERENCES

[0027] 10 Microstrip Patch Antenna

[0028] 1 1 Base Layer

[0029] 12 Ground Layer

[0030] 121 First Dielectric Structure

[0031] 121 1 First dielectric layer

[0032] 1212 Second dielectric layer

[0033] 1213 Third Dielectric layer

[0034] 122 First Functional Layer

[0035] 123 Second Dielectric structure

[0036] 1231 Fourth Dielectric layer 1232 Fifth Dielectric Layer

[0037] 1233 Sixth Dielectric Layer

[0038] 13 Patch Layer

[0039] 131 Third Dielectric Structure

[0040] 131 1 Seventh Dielectric Layer

[0041] 1312 Eighth Dielectric Layer

[0042] 1313 Ninth Dielectric Layer

[0043] 132 Second Functional Layer

[0044] 133 Fourth Dielectric Structure

[0045] 1321 Tenth Dielectric Layer

[0046] 1322 Eleventh dielectric layer

[0047] 1323 Twelfth dielectric layer

[0048] 134 Middle Dielectric Structure

[0049] 1341 Thirteenth dielectric layer

[0050] 1342 Fourteenth dielectric layer

[0051] 1343 Fifteenth dielectric layer

[0052] 135 Third Functional Layer

[0053] 136 Fourth Functional Layer

[0054] DETAILED DESCRIPTION OF THE INVENTION

[0055] In this detailed description, the subject of the invention relates to a microstrip patch antenna (10), and is described only with examples that will not create any limiting effect for a better understanding of the subject.

[0056] In this invention, laser engraving and masking processes known in the art can be applied to obtain patterns for the microstrip patch antenna (10). The scope of protection of this invention is not limited to laser engraving and masking processes and other applicable method processing steps for obtaining the said pattern.

[0057] The microstrip patch antenna (10) of the invention contains at least one base layer (1 1 ). This base layer (1 1 ) is included to provide mechanical strength and electrical insulation for the microstrip patch antenna (10). In this invention, at least one material selected from the group consisting of ceramic, glass fiber, epoxy resin, polymer can be included as the base layer (1 1 ). In a preferred embodiment, the base layer (11 ) is obtained from a flexible material. The inclusion of flexible material as the base layer (11 ) ensures that microstrip patch antennas (10) can be used even in non-planar designs. Further, utilizing a flexible base layer (1 1 ) can allow the microstrip patch antenna (10) to be positioned in industrial products in order to be used in concealable designs. In the invention for providing these properties, polymer-based materials with flexible properties are used as a base layer

[0058] (11 ). In a preferred embodiment, at least one material selected from the group consisting of polycarbonate, polyphenylene oxide, polyacrylic, and polyurethane can be used as the base layer (1 1 ).

[0059] The microstrip patch antenna (10) of the invention contains at least one ground layer

[0060] (12). The ground layer (12) is located adjacent to the lower part of the base layer (1 1 ) in the microstrip patch antennas (10). The ground layer (12) is located in the microstrip patch antenna (10) to provide protection from electrical interactions from the environment and to reduce parasitic radiation. In Figure 1 , the position of the ground layer (12) in the microstrip patch antenna (10) design is shown representatively. Here, the antenna geometry is chosen in the form of a solid rectangular patch. The solid patch is rectangular in form and is used for linear polarization. In alternative arrangements, solid structures such as square, circular, ellipse, triangle or fractal or hollow geometric structures such as rings can be used.

[0061] In a preferred arrangement of the invention, the ground layer (12) contains at least a first functional layer (122). The first functional layer (122) provides electrical conductivity properties to the structure. Said first functional layer (122) comprises at least one of the silver, copper, gold metals or alloys thereof in certain weight ratios or at least one of the oxides and / or nitrides thereof. In a preferred embodiment, the first functional layer (122) contains silver metal or an alloy comprising silver. In the most preferred embodiment, the first functional layer (122) contains silver metal.

[0062] In a preferred embodiment, the thickness of the first functional layer (122) is at a value in the range of 5 and 15 nm. In a more preferred embodiment, the thickness of the first functional layer (122) is at a value in the range of 7 and 12 nm. In a preferred embodiment, it comprises a first dielectric structure (121 ) adjacent to the lower part of and in contact with the first functional layer (122). The first dielectric structure (121 ) is located at the bottom part of the final product microstrip patch antenna (10). In a preferred embodiment, the first dielectric structure comprises at least one of SixNy, SiOxNy. ZnAI, NbOx, TiZrOxZnAIOx, ZnSnOx, NiCrOx, ZnOx, TiOx, TiNx, ZrOx, ZrNx.

[0063] In a preferred embodiment, the first dielectric structure (121 ) contains at least a first dielectric layer (121 1 ). Said first dielectric layer (121 1 ) is located at the bottom position of the first dielectric structure (121 ). First dielectric layer (1211 ) comprises at least one of SixNy, SiOxNy. ZnAI, ZnAIOx, ZnSnOx, TiOx, TiNx, ZrNx. In a preferred embodiment the first dielectric layer (121 1 ) comprises a TiOxlayer.

[0064] In a preferred embodiment, the thickness of the first dielectric layer (1211 ) is at a value in the range of 1 and 7 nm. In a more preferred embodiment, the thickness of the first dielectric layer (121 1 ) is at a value in the range of 2 and 5 nm.

[0065] In a preferred embodiment, the first dielectric structure (121 ) contains at least a second dielectric layer (1212). The second dielectric layer (1212) is located adjacent to the upper part of and in contact with the first dielectric layer (121 1 ). Second dielectric layer (1212) comprises at least one of SixNy, SiOxNy, ZnAI, ZnAIOx ZnSnOx, TiOx, TiNx, ZrNx. In a preferred embodiment, the second dielectric layer (1212) comprises a SixNylayer.

[0066] In a preferred embodiment, the thickness of the second dielectric layer (1212) is at a value in the range of 20 and 30 nm. In a more preferred embodiment, the thickness of the second dielectric layer (1212) is at a value in the range of 22 and 28 nm.

[0067] In a preferred embodiment, the first dielectric structure (121 ) contains at least a third dielectric layer (1213). The third dielectric layer (1213) is located adjacent to the upper part of and in contact with the second dielectric layer (1212). The third dielectric layer (1213) is included in the first dielectric structure (121 ) to protect the silver-containing first functional layer (122) and to provide nucleating functions. The third dielectric layer (1213) comprises at least one of NiCrOx, TiOx, ZnAIOx, ZnOx. In a preferred embodiment, the first dielectric structure (121 ) contains the ZnAIOx layer as the third dielectric layer (1213). In a preferred embodiment, the thickness of the third dielectric layer (1213) is at a value in the range of 5 and 15 nm. In a more preferred embodiment, the thickness of the third dielectric layer (1213) is at a value in the range of 7 and 12 nm. With the third dielectric layer (1213) being at the specified thicknesses, it also ensured that the first functional layer (122) is not exposed to oxygen load.

[0068] In a preferred embodiment, the ground layer (12) comprises a second dielectric structure (123) adjacent to the upper part of and in contact with the first functional layer (122). In this invention, the second dielectric structure (123) is included within the ground layer (12) to provide optical transmittance, increasing adhesion for the base layer (11 ) and increasing adhesion for the first functional layer (122). In a preferred embodiment, the second dielectric structure comprises at least one of SixNy, SiOxNy, ZnAI, NbOx, TiZrOxZnAIOx, ZnSnOx, NiCrOx, ZnOx, TiOx, TiNx, ZrOx, ZrNx.

[0069] In a preferred embodiment, the second dielectric structure (123) contains at least a fourth dielectric layer (1231 ). The fourth dielectric layer (1231 ) is located adjacent to the upper part of and in contact with the first functional layer (122). The fourth dielectric layer (1231 ) is included in second dielectric structure (123) to protect silver from oxidation and to provide nucleating functions. The fourth dielectric layer (1231 ) comprises at least one of NiCrOx, TiOx, ZnAIOx, ZnOx. In a preferred embodiment, the second dielectric structure (123) contains the ZnAIOxlayer as the fourth dielectric layer (1231 ). In a preferred embodiment, the second dielectric structure (123) comprises at least a fourth dielectric layer (1231 ) at a value in the range of 5 and 15 nm. In a more preferred embodiment, the thickness of the fourth dielectric layer (1231 ) is at a value in the range of 7 and 12 nm. In this way, it is ensured that the first functional layer (122) is not exposed to oxygen load.

[0070] In a preferred embodiment, the second dielectric structure (123) contains at least a fifth dielectric layer (1232). The fifth dielectric layer (1232) is located adjacent to the upper part of and in contact with the fourth dielectric layer (1231 ). It comprises at least one of SixNy, SiOxNy, ZnAI, ZnAIOx ZnSnOx, TiOx, TiNx, ZrNxas the fifth dielectric layer (1232). In a preferred embodiment, the second dielectric structure (123) contains the SixNylayer as the fifth dielectric layer (1232). In a preferred embodiment, the thickness of the fifth dielectric layer (1232) is at a value in the range of 20 and 30 nm. In a more preferred embodiment, the thickness of the fifth dielectric layer (1232) is at a value in the range of 22 and 28 nm. In a preferred embodiment, the second dielectric structure (123) contains at least a sixth dielectric layer (1233). The sixth dielectric layer (1233) is located adjacent to the upper part of and in contact with the fifth dielectric layer. It comprises at least one of SixNy, SiOxNy, ZnAI, ZnAIOxZnSnOx, TiOx, TiNx, ZrNxas the sixth dielectric layer (1233). In a preferred embodiment, the second dielectric structure (123) contains the TiOxlayer as the sixth dielectric layer (1233). In a preferred embodiment, the thickness of the sixth dielectric layer (1233) is at a value in the range of 1 and 7 nm. In a more preferred embodiment, the thickness of the sixth dielectric layer (1233) is at a value in the range of 2 and 5 nm. The sixth dielectric layer (1233) having the specified thickness ensures its adhesion to a base layer located thereon.

[0071] The microstrip patch antenna (10) of the invention contains at least one patch layer (13). The patch layer (13) is located adjacent to the upper part of the base layer (1 1 ) in the microstrip patch antenna (10). The patch layer (13) is included in the microstrip patch antenna (10) to ensure electrical conductivity, reflectivity and absorption. In Figure 1 , the position of the patch layer (13) in the microstrip patch antenna (10) design is shown representatively.

[0072] In a preferred arrangement of the invention, the patch layer (13) contains at least a second functional layer (132). The patch layer (13) contains the second functional layer (132) for electrical conductivity. Second functional layer (132) comprises at least one of the silver, copper, gold metals or alloys thereof in certain weight ratios or at least one of the oxides and / or nitrides thereof. The patch layer (13) comprises the second functional layer (132) for electrical conductivity. In a preferred embodiment, the second functional layer (132) contains silver metal or a silver-containing alloy. In the most preferred embodiment, the second functional layer (132) contains silver metal.

[0073] In a preferred embodiment, the patch layer (13) comprises a second functional layer (132) at a value in the range of 5 and 15 nm. In a more preferred embodiment, the patch layer (13) comprises a second functional layer (132) at a value in the range of 7 and 12 nm.

[0074] In a preferred embodiment, the patch layer (13) comprises a third dielectric structure (131 ) adjacent to the lower part of and in contact with the second functional layer (132). In a preferred embodiment, the third dielectric structure comprises at least one of SixNy, SiOxNy. ZnAI, NbOx, TiZrOxZnAIOx, ZnSnOx, NiCrOx, ZnOx, TiOx, TiNx, ZrOx, ZrNx.

[0075] In a preferred embodiment, the third dielectric structure (131 ) contains at least a seventh dielectric layer (131 1 ). Said seventh dielectric layer (131 1 ) is located adjacent to the upper part of and in contact with the base layer (1 1 ). Seventh dielectric layer (131 1 ) comprises at least one of SixNy, SiOxNy, ZnAI, ZnAIOxZnSnOx, TiOx, TiNx, ZrNx. In a preferred embodiment the seventh dielectric layer (131 1 ) comprises a TiOxlayer. In a preferred embodiment, the seventh dielectric layer (131 1 ) is at a value in the range of 1 and 7 nm. In a more preferred embodiment, the seventh dielectric layer (131 1 ) is at a value in the range of 2 and 5 nm. In this way, the seventh dielectric layer (131 1 ) is adhered to the base layer (12).

[0076] In a preferred embodiment, the third dielectric structure (131 ) contains at least an eighth dielectric layer (1312). The eighth dielectric layer (1312) is located adjacent to the upper part of and in contact with the seventh dielectric layer (1311 ). The third dielectric structure (131 ) contains at least one of SixNy, SiOxNy, ZnAI, ZnAIOx ZnSnOx, TiOx, TiNx, ZrNxas the eighth dielectric layer (1312). In a preferred embodiment, the third dielectric structure (131 ) contains the SixNylayer as the eighth dielectric layer (1312). In a preferred embodiment, the thickness of the eighth dielectric layer (1312) is at a value in the range of 20 and 30 nm. In a more preferred embodiment, the thickness of the eighth dielectric layer (1312) is at a value in the range of 22 and 28 nm.

[0077] In a preferred embodiment, the third dielectric structure (131 ) contains at least a ninth dielectric layer (1313). The ninth dielectric layer (1313) is located adjacent to the upper part of and in contact with the eighth dielectric layer (1312). The third dielectric structure (131 ) contains at least one of NiCrOx, TiOx, ZnAIOx, ZnOxas the ninth dielectric layer (1313). In a preferred embodiment, the third dielectric structure (131 ) contains the ZnAIOxlayer as the ninth dielectric layer (1313). In a preferred embodiment, the thickness of the ninth dielectric layer (1313) is at a value in the range of 5 and 15 nm. In a more preferred embodiment, the thickness of the ninth dielectric layer (1313) is at a value in the range of 7 and 12 nm. With the ninth dielectric layer (1313) being at the specified thicknesses, the silver-containing second functional layer (132) is protected from oxygen load and also the ninth dielectric layer (1313) provides nucleating functions. In a preferred embodiment, the patch layer (13) comprises a fourth dielectric structure (133) located on the second functional layer (132). In this invention, the fourth dielectric structure (133) is included within the patch layer (13) to provide optical transmittance, increasing adhesion for the base and increasing adhesion for the first functional layer (122). In a preferred embodiment, the fourth dielectric structure comprises at least one of SixNy, SiOxNy, ZnAI, NbOx, TiZrOxZnAIOx, ZnSnOx, NiCrOx, ZnOx, TiOx, TiNx, ZrOx, ZrNx.

[0078] In a preferred embodiment, the fourth dielectric structure (133) contains at least a tenth dielectric layer (1331 ). The tenth dielectric layer (1331 ) is located on the second functional layer (132). It comprises at least one of NiCrOx, TiOx, ZnAIOx, ZnOxas the tenth dielectric layer (1331 ). In a preferred embodiment, the fourth dielectric structure (133) contains the ZnAIOx layer as the tenth dielectric layer (1331 ). In a preferred embodiment, the thickness of the tenth dielectric layer (1331 ) is at a value in the range of 5 and 15 nm. In a more preferred embodiment, the thickness of the tenth dielectric layer (1331 ) is at a value in the range of 7 and 12 nm. With the tenth dielectric layer (1331 ) being at the specified thicknesses, the silver-containing second functional layer (132) is protected from oxygen load and also the tenth dielectric layer (1331 ) provides nucleating function.

[0079] In a preferred embodiment, the fourth dielectric structure (133) contains at least an eleventh dielectric layer (1332). The eleventh dielectric layer (1332) is located adjacent to the upper part of and in contact with the tenth dielectric layer (1331 ). The fourth dielectric structure (133) contains at least one of SixNy, SiOxNy, ZnAI, ZnAIOx ZnSnOx, TiOx, TiNx, ZrNxas the eleventh dielectric layer (1332). In a preferred embodiment, the fourth dielectric structure (133) contains the SixNylayer as the eleventh dielectric layer (1332). In a preferred embodiment, the thickness of the eleventh dielectric layer (1332) is at a value in the range of 20 and 30 nm. In a more preferred embodiment, the thickness of the eleventh dielectric layer (1332) is at a value in the range of 22 and 28 nm.

[0080] In a preferred embodiment, the fourth dielectric structure (133) contains at least a twelfth dielectric layer (1333). The twelfth dielectric layer (1333) is located adjacent to the upper part of and in contact with the eleventh dielectric layer (1332). The fourth dielectric structure (133) contains at least one of SixNy, SiOxNy, ZnSnOx, ZnAIOx, TiZrOx, TiOx, TiNx, ZrNx as the twelfth dielectric layer (1333). In a preferred embodiment, the fourth dielectric structure (133) contains the TiOxlayer as the twelfth dielectric layer (1333). In a preferred embodiment, the thickness of the twelfth dielectric layer (1333) is at a value in the range of 1 and 7 nm. In a more preferred embodiment, the thickness of the twelfth dielectric layer (1333) is at a value in the range of 2 and 5 nm.

[0081] In a preferred embodiment of the invention, the patch layer (13) contains at least two functional layers. By comprising at least two functional layers, the patch layer (13) enhances the electrical conductivity and antenna properties of the final product microstrip patch antenna (10).

[0082] In a preferred embodiment, the patch layer (13) contains a second functional layer (135) and a third functional layer (132). Said third functional layer (135) is located farther away from the base layer (11 ) than the second functional layer (132). The configuration of the patch layer 13, comprising a second functional layer (132) and a third functional layer (135), is shown in Figure 3.

[0083] In a preferred embodiment, the third functional layer (135) comprises at least one of the silver, copper, gold metals or alloys thereof in certain weight ratios or at least one of the oxides and / or nitrides thereof. In a preferred embodiment the thickness of the third functional layer (135) is at a value in the range of 5 and 15 nm. A more preferred thickness of the third functional layer (135) is at a value in the range of 7 and 12 nm. The patch layer (13) contains the third functional layer (135) for electrical conductivity and enhancing antenna properties. In a preferred embodiment, the third functional layer (135) contains silver metal or a silver-containing alloy. In the most preferred embodiment, the third functional layer (135) contains silver metal.

[0084] Referring to Figure 3, in a preferred embodiment of the invention, the patch layer (13) comprises at least one middle dielectric structure (134) between a second functional layer (132) and a third functional layer (135). The optical transmittance values that decrease due to the metal-containing functional layers used in the patch layer (13) and ground layer (12) can be improved by the support of the dielectric layers in said middle dielectric structure to the dielectric layers used in the ground layer (12), and even a coating with high transmittance can be obtained. In a preferred embodiment, the middle dielectric structure comprises at least one of SixNy, SiOxNy, ZnSnOx, ZnAIOx, TiZrOx, TiOx, TiNx, ZrNx. In a preferred embodiment, the middle dielectric structure (134) contains at least a thirteenth dielectric layer (1341 ). Said thirteenth dielectric layer (1341 ) is located adjacent to the upper part of and in contact with the second functional layer (132). It comprises at least one of NiCrOx, TiOx, ZnAIOx, ZnOxas the thirteenth dielectric layer (1341 ). In a preferred embodiment, the middle dielectric structure (134) contains the ZnAIOx layer as the thirteenth dielectric layer (1341 ). In a preferred embodiment, the thickness of the thirteenth dielectric layer (1341 ) is at a value in the range of 5 and 15 nm. In a more preferred embodiment, the thickness of the thirteenth dielectric layer (1341 ) is at a value in the range of 7 and 12 nm. The thirteenth dielectric layer (1341 ) has the specified thicknesses to protect the third functional layer (135) located under it from oxidation and to provide nucleating functions.

[0085] In a preferred embodiment, the middle dielectric structure (134) contains at least a fourteenth dielectric layer (1342). Said fourteenth dielectric layer (1342) is located adjacent to the upper part of and in contact with the thirteenth dielectric layer (1341 ). It comprises at least one of SixNy, SiOxNy, ZnSnOx, ZnAIOx, TiZrOx, TiOx, TiNx, ZrNxas the fourteenth dielectric layer (1342). In a preferred embodiment, the middle dielectric structure (134) contains the SixNy layer as the fourteenth dielectric layer (1342). In a preferred embodiment, the thickness of the fourteenth dielectric layer (1342) is at a value in the range of 30 and 75 nm. In a more preferred embodiment, the thickness of the fourteenth dielectric layer (1342) is at a value in the range of 40 and 60 nm.

[0086] In a preferred embodiment, the middle dielectric structure (134) contains at least a fifteenth dielectric layer (1343). Said fifteenth dielectric layer (1343) is located adjacent to the upper part of and in contact with the fourteenth dielectric layer (1342). The middle dielectric structure (134) contains at least one of NiCrOx, TiOx, ZnAIOx, ZnOxas the fifteenth dielectric layer (1343). In a preferred embodiment, the middle dielectric structure (134) contains the ZnAIOx layer as the fifteenth dielectric layer (1343). In a preferred embodiment, the thickness of the fifteenth dielectric layer (1343) is at a value in the range of 5 and 15 nm. In a more preferred embodiment, the thickness of the fifteenth dielectric layer (1343) is at a value in the range of 5 and 15 nm.

[0087] Referring to Figure 3, the middle dielectric structure (134) in a most preferred embodiment comprises the ZnAIOx / SixNy / ZnAIOx sandwich structure, respectively, from the second functional layer (132) to the third functional layer (134). In fact, the middle dielectric layer (134) with this sandwich structure protects the second functional layer (132) on the one hand and contributes to the nucleation of the third functional layer (135) on the other hand, with the use of ZnAIOx.

[0088] In a preferred embodiment of the invention, if the patch layer (13) contains two functional layers, starting from the base layer (11 ) to the external environment, it comprises the configuration of third dielectric structure (131 ) / second functional layer (132) / middle dielectric structure (134) / third functional layer (135) / fourth dielectric structure (133), respectively.

[0089] In a preferred arrangement of the invention, the patch layer (13) contains three functional layers. By comprising three functional layers, the patch layer (13) increases the enhancement of the electrical conductivity and antenna properties of the final product microstrip patch antenna (10).

[0090] In a preferred embodiment, the patch layer (13) contains a second functional layer (132) and a third functional layer (135), and a fourth functional layer (136). Said fourth functional layer (136) is located farther away from the base layer (11 ) than the second functional (132) and the third functional layer (133).

[0091] In a preferred embodiment, fourth functional layer (136) comprises at least one of the silver, copper, gold metals or alloys thereof in certain weight ratios or at least one of the oxides and / or nitrides thereof. The patch layer (13) comprises the fourth functional layer (136) for electrical conductivity. In a preferred embodiment, the fourth functional layer (136) contains at least one of silver metal or a silver-containing alloy. In the most preferred embodiment, the fourth functional layer (136) contains silver metal.

[0092] In a preferred embodiment, the patch layer (13) comprises a silver-containing fourth functional layer (136) at a value in the range of 5 and 15 nm. In a more preferred embodiment, the patch layer (13) comprises a sliver-containing fourth functional layer (136) at a value in the range of 7 and 12 nm.

[0093] The configuration of the patch layer (13), comprising a third functional layer, is shown in Figure 4. Referring to Figure 4, the patch layer (13) comprises at least one middle dielectric structure (134) located between a third functional layer (135) and a second functional layer (132).

[0094] In a preferred embodiment of the invention, if the patch layer contains three functional layers, starting from the base to the external environment, it comprises the configuration of third dielectric structure (131 ) / second functional layer (132) / middle dielectric structure (134) / third functional layer (135) / middle dielectric structure (134) / fourth functional layer (136) / fourth dielectric structure (133), respectively.

[0095] TESTS

[0096] In the microstrip patch antennas (10) to be tested in the present invention,

[0097] - the TiOx / SixNy / ZnAIOx layer arrangement, respectively, is referred to as 3L, the ZnAIOx / SixNy / ZnAIOx layer arrangement, respectively, is referred to as 3S.

[0098] The microstrip patch antennas to be tested accordingly are given the reference names;

[0099] - MLA-1 for the design with "3L / Ag / 3L / polycarbonate based base / 3L / Ag / 3L" layer arrangement,

[0100] - MLA-2 for the design with "3L / Ag / 3L / polycarbonate based base / 3L / Ag / 3S / Ag / 3L" layer arrangement,

[0101] - MLA-3 for the design with "3L / Ag / 3L / polycarbonate based base / 3L / Ag / 3S / Ag / 3S / Ag / 3L" layer arrangement, and some test studies are carried out in order to characterize their technical properties.

[0102] The microstrip patch antennas (10) mentioned are manufactured using a magnetic field sputtering system. The samples prepared in a masked manner were coated in different multi-layer structures such as MLA-1 , MLA-2 and MLA-3 by in-line spraying method. Multilayer structures consist of a conductive Ag layer, a layer to increase adhesion between Ag and PC, and protective layers on top of the Ag layer. After deposition, masks were removed from the samples. Firstly, the characterization of microstrip patch antennas (10) with the MLA-1 , MLA-2 and MLA-3 designs was performed with Scanning Electron Microscope method. The images obtained are shown as Figure 5.

[0103] The surface resistance values of microstrip patch antennas (10) with the MLA-1 , MLA-2 and MLA-3 designs were measured using the four-probe technique. In this technique, a current was supplied through two outer probes, and voltage was measured through the remaining two internal probes. Resistivity was calculated using current and voltage values. The surface resistances of the produced structures were measured by four-point probe technique (Keithley 224 Programmable Current Source and 2000 Multimeter). Table 1 shows the surface resistances of the samples obtained.

[0104] Table 1. Surface resistances of tested samples

[0105] Microstrip patch antennas (10) with the MLA-1 , MLA-2 and MLA-3 designs have an antenna efficiency; efficiency and peak gain of the MLA3 antenna is 37%; 3.013 dBi (at 12.9 GHz) and the results obtained are shown in Table 2. Due to patch resistance, the efficiency and peak gains of the antennas are higher in MLA3 and lower in MLA1 . As can be seen from the measurement results, MLA3 has the highest antenna performance. Accordingly, it can be seen that an efficient result is obtained for a microstrip patch antenna operating between 10-13 GHz.

[0106] Table 2. Antenna efficiency and peak gain values of tested samples The optical transmittance values of the microstrip patch antennas (10) with the MLA-1 , MLA-2 and MLA-3 designs were measured using the Perkin Elmer Lambda 1050 UV / Vis / NIR Spectrophotometer in the range of 280 nm - 2500 nm. The results obtained are shared as Figure 6.

[0107] Referring to Figure 6, out of the microstrip patch antennas (10) with the MLA-1 , MLA-2 and MLA-3 designs, the MLA-1 design has the highest transmittance value at a wavelength of 550 nm with 85%. Further, the microstrip patch antenna (10) with the MLA- 1 design has the highest transmittance value also in the visible region wavelength. The microstrip patch antenna (10) with the MLA-3 design has the lowest transmittance value among these, but the transmittance value is 68% at the visible wavelength of 550 nm. However, the microstrip patch antenna with the MLA-3 design which has the lowest transmittance value, has higher antenna efficiency values than the microstrip patch antennas (10) with the MLA-2 and MLA-1 design. Further, the microstrip patch antenna (10) with the MLA-3 design which does not have transmittance values lower than 65% in visible region wavelengths can have a transmittance value of at least 60% in visible region wavelengths suitable for the relevant technical field and can have high antenna efficiency values. For this reason, it has been determined that the microstrip patch antennas (10) mentioned in the invention will have a transmittance value of at least 65% depending on the number of silver in the patch layer (13) at visible region wavelengths and high antenna efficiency with the arrangements it contains.

[0108] While the antenna properties of the structure are improved with the increase in the total thickness of the metal-containing layers in the microstrip patch antenna (10) arrangements of the invention, the optical transmittance values are not sacrificed thanks to the dielectric layers used. In order to provide the mentioned technical features and advantages, the patch layer and ground layers characterized in the microstrip patch antenna (10) and the layers they contain are designed by ensuring that the layers determined as a result of research and development activities are in the specified positions and thickness ranges.

[0109] The scope of protection of the invention is specified in the appended claims and cannot be limited to what is described for illustrative purposes in this detailed description. It is clear that a person skilled in the art can produce similar embodiments in the light of what is explained above, without deviating from the main theme of the invention.

Claims

CLAIMS1. A microstrip patch antenna (10) with enhanced antenna properties and having an optical transmittance value of at least 65%, tuned to operate in the frequency range of 10-13 GHz, characterized in that it contains the following:- a ground layer (12) comprising at least a first functional layer (122), wherein said at least a first functional layer (122) contains at least one of the silver, copper, gold metals, or at least one of the alloys thereof,- at least one base layer (11 ) located adjacent to the upper part of the ground layer (12),- at least one patch layer (13) located adjacent to the upper part of said base layer (1 1 ) and containing at least a second functional layer (132), having a shape form in a predetermined antenna geometry, wherein said at least a second functional layer (132) contains at least one of the silver, copper, gold metals, or at least one of the alloys thereof.

2. A microstrip patch antenna (10) according to Claim 1 , characterized in that said ground layer (12) contains, respectively, the following;- a first dielectric structure (121 ) comprising at least one of SixNy, SiOxNy, ZnAI, NbOx, TiZrOxZnAIOx, ZnSnOx, NiCrOx, ZnOx, TiOx, TiNx, ZrOx, ZrNx,- a first functional layer (122) located adjacent to the upper part of and in contact with the first dielectric structure (121 ) and comprising at least one of the silver, copper, gold metals or at least one of the alloys thereof,- a second dielectric structure (123) located adjacent to the upper part of and in contact with the first functional layer and containing at least one of SixNy, SiOxNy, ZnAI, NbOx, TiZrOxZnAIOx, ZnSnOx, NiCrOx, ZnOx, TiOx, TiNx, ZrOx, ZrNx.

3. A microstrip patch antenna (10) according to Claim 2, characterized in that said first dielectric structure (121 ) contains, respectively, the following;- a first dielectric layer (1211 ) comprising at least one of SixNy, SiOxNy, ZnAI, ZnAIOx, ZnSnOx, NiCrOx, ZnOx, TiOx, TiNx, ZrNx,- a second dielectric layer (1212) located adjacent to the upper part of and in contact with the first dielectric layer and containing at least one of SixNy, SiOxNy, ZnAI, ZnAIOx, ZnSnOx, NiCrOx, ZnOx, TiOx, TiNx, ZrNx,- a third dielectric layer (1213) located adjacent to the upper part of and in contact with the second dielectric layer and containing at least one of NiCrOx, TiOx, ZnAIOx, ZnOx.

4. A microstrip patch antenna (10) according to Claim 2 or Claim 3, characterized in that said second dielectric structure (123) contains, respectively, the following;- a fourth dielectric layer (1231 ) comprising at least one of NiCrOx, TiOx, ZnAIOx, ZnOx,- a fifth dielectric layer (1232) located adjacent to the contacting upper part of and in contact with the fourth dielectric layer and containing at least one of SixNy, SiOxNy, ZnAI, ZnAIOx ZnSnOx, TiOx, TiNx, ZrNx,- a sixth dielectric layer (1233) located adjacent to the upper part of and in contact with the fifth dielectric layer and containing at least one of SixNy, SiOxNy, ZnAI, ZnAIOx, ZnSnOx, TiOx, TiNx, ZrNx.

5. A microstrip patch antenna (10) according to one of the preceding claims, characterized in that said first functional layer (122) is silver metal.

6. A microstrip patch antenna (10) according to one of the preceding claims, characterized in that the ground layer (12) contains, respectively;- a first dielectric layer (121 1 ) comprising TiOx and having a thickness value at a value in the range of 1 to 7 nm,- a second dielectric layer (1212) located adjacent to the upper part of and in contact with the first dielectric layer (1211 ) and containing SixNy, having a thickness value at a value in the range of 20 to 30 nm,- a third dielectric layer (1213) located adjacent to the upper part of and in contact with the second dielectric layer (1212) and containing ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- a first functional layer (122) located adjacent to the upper part of and in contact with the third dielectric layer (1213) and comprising silver, having a thickness value at a value in the range of 5 to 15 nm,- a fourth dielectric layer (1231 ) located adjacent to the upper part of and in contact with the first functional layer (122) and comprising ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- a fifth dielectric layer (1232) located adjacent to the upper part of and in contact with the fourth dielectric layer (1231 ) and containing SixNy, having a thickness value at a value in the range of 5 to 15 nm,- a sixth dielectric layer (1233) located adjacent to the upper part of and in contact with the fifth dielectric layer (1232) and containing TiOx, having a thickness value at a value in the range of 1 to 7 nm.

7. A microstrip patch antenna (10) according to one of the preceding claims, characterized in that said base layer (11 ) is at least one selected from the group of polycarbonate, polyphenylene oxide, polyacrylic, polyurethane.

8. A microstrip patch antenna (10) according to one of the preceding claims, characterized in that said patch layer (13) contains, respectively, the following;- a third dielectric structure (131 ) located adjacent to the upper part of and in contact with the base layer (1 1 ) and comprising at least one of SixNy, SiOxNy, ZnAI, NbOx, TiZrOxZnAIOx, ZnSnOx, NiCrOx, ZnOx, TiOx, TiNx, ZrOx, ZrNx,- a second functional layer (132) located adjacent to the upper part of and in contact with the third dielectric structure (131 ) and comprising at least one of the silver, copper, gold metals or at least one of the alloys thereof,- a fourth dielectric structure (134) located adjacent to the upper part of and in contact with the second functional layer and containing at least one of SixNy, SiOxNyZnAI, NbOx, TiZrOxZnAIOx, ZnSnOx, NiCrOx, ZnOx, TiOx, TiNx, ZrOx, ZrNx.

9. A microstrip patch antenna (10) according to Claim 8, characterized in that said third dielectric structure (131 ) contains, respectively, the following;- a seventh dielectric layer (131 1 ) comprising at least one of SixNy, SiOxNy, ZnAI, ZnAIOx, ZnSnOx, NiCrOx, ZnOx, TiOx, TiNx, ZrNx,- an eighth dielectric layer (1312) located adjacent to the upper part of and in5 contact with the seventh dielectric layer (1311 ) and containing at least one ofSixNy, SiOxNyZnAI, ZnAIOx, ZnSnOx, TiOx, TiNx, ZrNx,- a ninth dielectric layer (1313) located adjacent to the upper part of and in contact with the eighth dielectric layer and containing at least one of NiCrOx, TiOx, ZnAIOx, ZnOx.10.

10. A microstrip patch antenna (10) according to Claim 8 or Claim 9, characterized in that said fourth dielectric structure (133) contains, respectively, the following;- a tenth dielectric layer (1331 ) comprising at least one of NiCrOx, TiOx, ZnAIOx,15 ZnOx,- an eleventh dielectric layer (1332) located adjacent to the contacting upper part of and in contact with the tenth dielectric layer (1331 ) and containing at least one of SixNy, SiOxNy, ZnAI, ZnAIOx , ZnSnOx, TiOx, TiNx, ZrNx,- a twelfth dielectric layer (1333) located adjacent to the upper part of and in contact 0 with the eleventh dielectric layer and containing at least one of SixNy, SiOxNy,ZnAI, ZnAIOx, ZnSnOx, TiOx, TiNx, ZrNx.

11. A microstrip patch antenna (10) according to one of the preceding claims, characterized in that said second functional layer (132) is silver metal.

512. A microstrip patch antenna (10) according to one of the preceding claims, characterized in that the patch layer (13) contains, respectively;- a seventh dielectric layer (131 1 ) comprising TiOx and having a thickness value30 at a value in the range of 1 to 7 nm,- an eighth dielectric layer (1312) located adjacent to the upper part of and in contact with the seventh dielectric layer (1311 ) and containing SixNy, having a thickness value at a value in the range of 20 to 30 nm,- a ninth dielectric layer (1313) located adjacent to the upper part of and in contact with the eighth dielectric layer (1312) and containing ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- a second functional layer (132) located adjacent to the upper part of and in contact with the ninth dielectric layer (1313) and comprising silver, having a thickness value at a value in the range of 5 to 15 nm,- a tenth dielectric layer (1331 ) located adjacent to the upper part of and in contact with the second functional layer (132) and comprising ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- an eleventh dielectric layer (1332) located adjacent to the upper part of and in contact with the tenth dielectric layer (1331 ) and containing SixNy, having a thickness value at a value in the range of 20 to 30 nm,- a twelfth dielectric layer (1333) located adjacent to the upper part of and in contact with the eleventh dielectric layer (1332) and containing TiOx, having a thickness value at a value in the range of 1 to 7 nm.

13. A microstrip patch antenna (10) according to Claim 1 , characterized in that the patch layer (13) contains a second functional layer (132) and a third functional layer (135).

14. A microstrip patch antenna according to Claim 13, characterized in that said third functional layer (135) comprises at least one of the silver, copper, gold metals or at least one of the alloys thereof.

15. A microstrip patch antenna (10) according to any one of Claim 13 or Claim 14, characterized in that the patch layer (13) contains;- positioning the second functional layer (132) closer to the base layer and the third functional layer (135) farther from the base layer (11 ) than the second functional layer (132), and- a middle dielectric layer (134) between the second functional layer (132) and the third functional layer (135).

16. A microstrip patch antenna (10) according to one of Claims 13-15, characterized in that the patch layer (13) contains, respectively, the following;- a third dielectric structure (131 ) located adjacent to the upper part of and in contact with the base layer (1 1 ) and comprising at least one of SixNy, SiOxNy, ZnAI, NbOx, TiZrOx ZnAIOx, ZnSnOx, NiCrOx, ZnOx, TiOx, TiNx, ZrOx, ZrNx,- a second functional layer (132) located adjacent to the upper part of and in contact with the third dielectric structure (131 ) and comprising at least one of the silver, copper, gold metals or at least one of the alloys thereof,- a middle dielectric structure (134) located between the second functional layer (132) and third functional layer (135) and comprising at least one of SixNy, SiOxNy, ZnSnOx, ZnAIOx, TiZrOx, TiOx, TiNx, ZrNx,- a third functional layer (135) located adjacent to the upper part of and in contact with the middle dielectric structure (134) and comprising at least one of the silver, copper, gold metals or at least one of the alloys thereof,- a fourth dielectric structure (133) located adjacent to the upper part of and in contact with the third functional layer (135) and containing at least one of SixNy, SiOxNy, ZnAI, NbOx, TiZrOx, ZnAIOx, ZnSnOx, NiCrOx, ZnOx, TiOx, TiNx, ZrOx, ZrNx.

17. A microstrip patch antenna (10) according any one of Claims 13-16, characterized in that said middle dielectric structure (134) contains, respectively, the following;- a thirteenth dielectric layer (1341 ) located adjacent to the upper part of and in contact with the second functional layer (132) and containing at least one of NiCrOx, TiOx, ZnAIOx, ZnOx,- a fourteenth dielectric layer (1342) located adjacent to the upper part of and in contact with the thirteenth dielectric layer and containing at least one of SixNy, SiOxNy, ZnSnOx, ZnAIOx, TiZrOx, TiOx, TiNx, ZrNx,- a fifteenth dielectric layer (1343) located adjacent to the upper part of and in contact with the fourteenth dielectric layer and containing at least one of NiCrOx, TiOx, ZnAIOx, ZnOx.

18. A microstrip patch antenna (10) according to any one of Claims 13-17, characterized in that the patch layer (13) contains, respectively;- a seventh dielectric layer (131 1 ) comprising TiOx and having a thickness value at a value in the range of 1 to 7 nm,- an eighth dielectric layer (1312) located adjacent to the upper part of and in contact with the seventh dielectric layer (1311 ) and containing SixNy, having a thickness value at a value in the range of 20 to 30 nm,- a ninth dielectric layer (1313) located adjacent to the upper part of and in contact with the eighth dielectric layer (1312) and containing one of ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- a second functional layer (132) located adjacent to the upper part of and in contact with the ninth dielectric layer (1313) and comprising silver, having a thickness value at a value in the range of 5 to 15 nm,- a thirteenth dielectric layer (1341 ) located adjacent to the upper part of and in contact with the second functional layer (132) and containing one of ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- a fourteenth dielectric layer (1342) located adjacent to the upper part of and in contact with the thirteenth dielectric layer (1341 ) and containing SixNy, having a thickness value at a value in the range of 30 to 75 nm, a fifteenth dielectric layer (1343) located adjacent to the upper part of and in contact with the fourteenth layer (1342) and comprising ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- a third functional layer (135) located adjacent to the upper part of and in contact with the fifteenth layer (1343) and comprising silver, having a thickness value at a value in the range of 5 to 15 nm,- a tenth dielectric layer (1331 ) located adjacent to the upper part of and in contact with the third functional layer (135) and comprising ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- an eleventh dielectric layer (1332) located adjacent to the upper part of and in contact with the tenth dielectric layer (1331 ) and containing SixNy, having a thickness value at a value in the range of 20 to 30 nm,- a twelfth dielectric layer (1333) located adjacent to the upper part of and in contact with the eleventh dielectric layer (1332) and containing TiOx, having a thickness value at a value in the range of 1 to 7 nm.

19. A microstrip patch antenna (10) according to Claim 1 , characterized in that the patch layer (13) contains a second functional layer (132), a third functional layer (135), and a fourth functional layer (136).

20. A microstrip patch antenna (10) according to Claim 19, characterized in that said third functional layer (135) comprises at least one of the silver, copper, gold metals or at least one of the alloys thereof.21 . A microstrip patch antenna (10) according to Claim 19 or Claim 20, characterized in that said fourth functional layer (136) comprises at least one of the silver, copper, gold metals or at least one of the alloys thereof.

22. A microstrip patch antenna (10) according to any one of Claims 19-21 , characterized in that the patch layer (13) contains;- positioning the second functional layer (132) closer to the base layer (11 ), the third functional layer (136) farther from the base layer (1 1 ) than the second functional layer (132), and positioning the fourth functional layer (136) farther from the base layer (1 1 ) than the third functional layer (135), and- a middle dielectric structure (134) between the second functional layer (132) and the third functional layer (135),- a middle dielectric structure (134) between the third functional layer (135) and the fourth functional layer (136).

23. A microstrip patch antenna (10) according to any one of Claims 19-22, characterized in that the patch layer (13) contains, respectively, the following;- a third dielectric structure (131 ) located adjacent to the upper part of and in contact with the base layer (1 1 ) and comprising at least one of SixNy, SiOxNy, ZnAI, NbOx, TiZrOx, ZnAIOx, ZnSnOx, NiCrOx, ZnOx, TiOx, TiNx, ZrOx, ZrNx,- a second functional layer (132) located adjacent to the upper part of and in contact with the third dielectric structure (131 ) and comprising at least one of the silver, copper, gold metals or at least one of the alloys thereof,- a middle dielectric structure (134) located between the second functional layer (132) and third functional layer (135) and comprising at least one of SixNy, SiOxNy, ZnSnOx, ZnAIOx, TiZrOx, TiOx, TiNx, ZrNx,- a third functional layer (135) located adjacent to the upper part of and in contact with the middle dielectric structure (134) and comprising at least one of the silver, copper, gold metals or at least one of the alloys thereof,- a middle dielectric structure (134) located between the third functional layer (135) and fourth functional layer (136) and comprising at least one of SixNy, SiOxNy, ZnSnOx, ZnAIOx, TiZrOx, TiOx, TiNx, ZrNx,- a fourth functional layer (136) located adjacent to the upper part of and in contact with the middle dielectric structure (134) and comprising at least one of the silver, copper, gold metals or at least one of the alloys thereof,- a fourth dielectric structure (134) located adjacent to the upper part of and in contact with the fourth functional layer (136) and containing at least one of SixNy, SiOxNy, ZnSnOx, ZnAIOx, TiZrOx, TiOx, TiNx, ZrNx.

24. A microstrip patch antenna (10) according to Claim 23, characterized in that the patch layer (13) contains, respectively;- a seventh dielectric layer (131 1 ) comprising TiOx and having a thickness value at a value in the range of 1 to 7 nm,- an eighth dielectric layer (1312) located adjacent to the upper part of and in contact with the seventh dielectric layer (1311 ) and containing SixNy, having a thickness value at a value in the range of 20 to 30 nm,- a ninth dielectric layer (1313) located adjacent to the upper part of and in contact with the eighth dielectric layer (1312) and containing ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- a second functional layer (132) located adjacent to the upper part of and in contact with the ninth dielectric layer (1313) and comprising silver, having a thickness value at a value in the range of 5 to 15 nm,- a thirteenth dielectric layer (1341 ) located adjacent to the upper part of and in contact with the second functional layer (132) and containing ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- a fourteenth dielectric layer (1342) located adjacent to the upper part of and in contact with the thirteenth dielectric layer (1341 ) and containing SixNy, having a thickness value at a value in the range of 30 to 75 nm, a fifteenth dielectric layer (1343) located adjacent to the upper part of and in contact with the fourteenth layer (1342) and comprising ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- a third functional layer (135) located adjacent to the upper part of and in contact with the fifteenth layer (1343) and comprising silver, having a thickness value at a value in the range of 5 to 15 nm,- a thirteenth dielectric layer (1341) located adjacent to the upper part of and in contact with the third functional layer (135) and containing ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- a fourteenth dielectric layer (1342) located adjacent to the upper part of and in contact with the thirteenth dielectric layer and containing SixNy, having a thickness value at a value in the range of 30 to 75 nm, a fifteenth dielectric layer (1343) located adjacent to the upper part of and in contact with the fourteenth layer and comprising ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- a fourth functional layer (136) located adjacent to the upper part of and in contact with the fifteenth dielectric layer (1343) and comprising silver, having a thickness value at a value in the range of 5 to 15 nm,- a tenth dielectric layer (1331) located adjacent to the upper part of and in contact with the fourth functional layer (136) and comprising ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- an eleventh dielectric layer (1332) located adjacent to the upper part of and in contact with the tenth dielectric layer (1331 ) and containing SixNy, having a thickness value at a value in the range of 20 to 30 nm,- a twelfth dielectric layer (1333) located adjacent to the upper part of and in contact with the eleventh dielectric layer (1332) and containing TiOx, having a thickness value at a value in the range of 1 to 7 nm.

25. A microstrip patch antenna (10) according to any one of the preceding claims, characterized in that it contains, respectively, the following;- a first dielectric layer (1211) comprising TiOx and having a thickness value at a value in the range of 1 to 7 nm,- a second dielectric layer (1212) located adjacent to the upper part of and in contact with the first dielectric layer (1211 ) and containing SixNy, having a thickness value at a value in the range of 20 to 30 nm,- a third dielectric layer (1213) located adjacent to the upper part of and in contact with the second dielectric layer (1212) and containing ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- a first functional layer (122) located adjacent to the upper part of and in contact with the third dielectric layer (1213) and comprising silver, having a thickness value at a value in the range of 5 to 15 nm,- a fourth dielectric layer (1231 ) located adjacent to the upper part of and in contact with the first functional layer (122) and comprising ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- a fifth dielectric layer (1232) located adjacent to the upper part of and in contact with the fourth dielectric layer (1231 ) and containing SixNy, having a thickness value at a value in the range of 5 to 15 nm,- a sixth dielectric layer (1233) located adjacent to the upper part of and in contact with the fifth dielectric layer (1232) and containing TiOx, having a thickness value at a value in the range of 1 to 7 nm,- a base layer (11 ) located adjacent to the upper part of and in contact with the sixth dielectric layer (1233) and containing polycarbonate,- a seventh dielectric layer (131 1 ) located adjacent to the upper part of and in contact with the base layer (1 1 ) and containing TiOx, and having a thickness value at a value in the range of 1 to 7 nm,- an eighth dielectric layer (1312) located adjacent to the upper part of and in contact with the seventh dielectric layer (1311 ) and containing SixNy, having a thickness value at a value in the range of 20 to 30 nm,- a ninth dielectric layer (1313) located adjacent to the upper part of and in contact with the eighth dielectric layer (1312) and containing ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- a second functional layer (132) located adjacent to the upper part of and in contact with the ninth dielectric layer (1313) and comprising silver, having a thickness value at a value in the range of 5 to 15 nm,- a thirteenth dielectric layer (1341 ) located adjacent to the upper part of and in contact with the second functional layer (132) and containing ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- a fourteenth dielectric layer (1342) located adjacent to the upper part of and in contact with the thirteenth dielectric layer (1341 ) and containing SixNy, having a thickness value at a value in the range of 30 to 75 nm,a fifteenth dielectric layer (1343) located adjacent to the upper part of and in contact with the fourteenth layer (1342) and comprising ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- a third functional layer (135) located adjacent to the upper part of and in contact with the fifteenth layer (1343) and comprising silver, having a thickness value at a value in the range of 5 to 15 nm,- a thirteenth dielectric layer (1341) located adjacent to the upper part of and in contact with the third functional layer (135) and containing ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- a fourteenth dielectric layer (1342) located adjacent to the upper part of and in contact with the thirteenth dielectric layer (1341) and containing SixNy, having a thickness value at a value in the range of 30 to 75 nm, a fifteenth dielectric layer (1343) located adjacent to the upper part of and in contact with the fourteenth layer (1342) and comprising ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- a fourth functional layer (136) located adjacent to the upper part of and in contact with the fifteenth dielectric layer (1343) and comprising silver, having a thickness value at a value in the range of 5 to 15 nm,- a tenth dielectric layer (1331) located adjacent to the upper part of and in contact with the fourth functional layer (136) and comprising ZnAIOx, having a thickness value at a value in the range of 5 to 15 nm,- an eleventh dielectric layer (1332) located adjacent to the upper part of and in contact with the tenth dielectric layer (1331 ) and containing SixNy, having a thickness value at a value in the range of 20 to 30 nm,- a twelfth dielectric layer (1333) located adjacent to the upper part of and in contact with the eleventh dielectric layer (1332) and containing TiOx, having a thickness value at a value in the range of 1 to 7 nm.

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