Film layer structure and preparation method

Abstract

A film layer structure and a preparation method. The preparation method comprises: forming a first ceramic coating (11) by means of an atmospheric plasma spray-coating process or an evaporation process; forming a second ceramic coating (12) on the side of the first ceramic coating (11) away from a substrate by means of a suspension plasma spray-coating process; and forming a third ceramic coating (13) on the side of the second ceramic coating (12) away from the substrate by means of a chemical vapor deposition process or a physical vapor deposition process. The first ceramic coating (11) prepared by means of the atmospheric plasma spray-coating process or the evaporation process has a good interface bonding force. The second ceramic coating (12) prepared by means of the suspension plasma spray-coating process can reduce the roughness and porosity of the film layer structure. The third ceramic coating (13) prepared by means of the chemical vapor deposition process or the physical vapor deposition process reduces defects such as cracks in the film layer structure, thereby obtaining a smooth and compact film layer structure surface without crack defects, which surface can enhance the cleaning function of plasma cleaning of process by-products adhered on a chamber lining of a plasma device when said surface is applied to the chamber lining.

Description

A membrane structure and preparation method

[0001] This application claims priority to the Chinese patent application filed with the State Intellectual Property Office of China on October 7, 2023, with application number 202311283852.1 and invention name “A membrane layer structure and preparation method”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the field of semiconductor technology, and in particular to a film structure and a preparation method thereof. Background Art

[0003] The conventional inductively coupled plasma etching (ICP etching) process is completed by alternating wafer etching and subsequent chamber in-situ plasma cleaning (Chamber in-situ cleaning) or no wafer clean (NWC) workflows.

[0004] The purpose of plasma cleaning is to remove defects or deposited process byproducts generated within the chamber after the previous plasma etching of the wafer. As the etching process progresses, the defects or deposited process byproducts continue to increase, making it difficult to process the next wafer in a stable chamber environment. This requires plasma cleaning after each wafer etching to remove the chamber deposits.

[0005] However, the effectiveness of plasma cleaning also depends on the surface condition of the workpiece film structure inside the chamber. Generally, the smoother and flatter the workpiece film structure surface, the easier it is for plasma cleaning to remove process byproducts.

[0006] However, the surface of the chamber liner currently used is often not very smooth and flat, and has high surface defects and roughness, which seriously affects the stability and yield of the plasma etching process.

[0007] Summary of the Invention

[0008] In view of this, this Summary of the Invention section is provided to briefly introduce the concepts that will be described in detail in the Detailed Description of the Invention section below. This Summary of the Invention section is not intended to identify key features or essential features of the claimed technical solution, nor is it intended to limit the scope of the claimed technical solution.

[0009] The purpose of this application is to provide a film layer structure and a preparation method, wherein the surface of the film layer structure is smooth, dense and free of defects such as cracks, which can improve the stability and yield of the plasma etching process.

[0010] To achieve the above objectives, this application has the following technical solutions:

[0011] In a first aspect, an embodiment of the present application provides a method for preparing a film structure, wherein the film structure is applied to a plasma device, comprising:

[0012] providing a substrate;

[0013] A multilayer ceramic coating is formed on one side of the substrate; the roughness and porosity of the multilayer ceramic coating gradually decrease from the side close to the substrate to the side far away from the substrate.

[0014] In a possible implementation, the multilayer ceramic coating includes a first ceramic coating, a second ceramic coating, and a third ceramic coating, and forming the multilayer ceramic coating on one side of the substrate includes:

[0015] forming a first ceramic coating on the substrate by using an atmospheric plasma spraying process or an evaporation process;

[0016] forming a second ceramic coating on a side of the first ceramic coating away from the substrate by using a suspension plasma spraying process;

[0017] A third ceramic coating is formed on a side of the second ceramic coating away from the substrate by using a chemical vapor deposition process, a physical vapor deposition process, a plasma enhanced chemical vapor deposition process or a plasma enhanced physical vapor deposition process.

[0018] In a possible implementation, the substrate is made of aluminum or an aluminum alloy.

[0019] In a possible implementation, the material of the first ceramic coating includes aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet.

[0020] In a possible implementation, the material of the second ceramic coating includes aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet.

[0021] In a possible implementation, the material of the third ceramic coating includes aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet.

[0022] In a possible implementation, the second ceramic coating includes a first ceramic sub-coating and a second ceramic sub-coating.

[0023] In a possible implementation, the thickness of the first ceramic coating is greater than or equal to 50 μm and less than or equal to 500 μm.

[0024] In a possible implementation, the thickness of the second ceramic coating is greater than or equal to 50 μm and less than or equal to 500 μm.

[0025] In a possible implementation, the thickness of the third ceramic coating is greater than or equal to 2 μm and less than or equal to 200 μm.

[0026] In a possible implementation, the porosity of the first ceramic coating is greater than or equal to 3% and less than or equal to 8%.

[0027] In a possible implementation, the porosity of the second ceramic coating is less than or equal to 3%.

[0028] In a possible implementation, the porosity of the third ceramic coating is less than or equal to 0.1%.

[0029] In a possible implementation, the roughness of the first ceramic coating is greater than or equal to 3 μm and less than or equal to 8 μm.

[0030] In a possible implementation, the roughness of the second ceramic coating is greater than or equal to 1.0 μm and less than or equal to 4 μm.

[0031] In a possible implementation, the roughness of the third ceramic coating is less than or equal to 1 μm.

[0032] In a possible implementation, the aluminum alloy includes copper, silicon, iron, manganese, magnesium, zinc, chromium and / or titanium.

[0033] In a possible implementation, the aluminum alloy is 6061 aluminum plate alloy.

[0034] In a second aspect, an embodiment of the present application provides a film structure, which is applied to plasma equipment, including plasma etching equipment and plasma coating equipment, and is prepared using the above-mentioned method, including:

[0035] substrate;

[0036] A multilayer ceramic coating is located on one side of the substrate; the roughness and porosity of the multilayer ceramic coating gradually decrease from the side close to the substrate to the side far away from the substrate.

[0037] In a possible implementation, the multilayer ceramic coating includes a first ceramic coating, a second ceramic coating, and a third ceramic coating;

[0038] The materials of the first ceramic coating, the second ceramic coating and the third ceramic coating include aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride or yttrium aluminum garnet.

[0039] Compared with the prior art, the embodiments of the present application have the following beneficial effects:

[0040] An embodiment of the present application provides a film structure and preparation method, comprising: providing a substrate; forming a first ceramic coating on the substrate using an atmospheric plasma spraying process or an evaporation process; forming a second ceramic coating on the side of the first ceramic coating away from the substrate using a suspension plasma spraying process; and forming a third ceramic coating on the side of the second ceramic coating away from the substrate using a chemical vapor deposition process or a physical vapor deposition process. The first ceramic coating prepared by the atmospheric plasma spraying process or the evaporation process in the present application has good interfacial bonding strength, facilitating bonding with the substrate. The second ceramic coating prepared by the suspension plasma spraying process can reduce the roughness and porosity of the film structure. The third ceramic coating prepared by the chemical vapor deposition process or the physical vapor deposition process can further reduce defects such as cracks in the film structure. This results in a smooth, dense, crack-free film structure surface. Application of this smooth, dense, crack-free film structure on the chamber lining of a plasma device can enhance the plasma cleaning function of the plasma cleaning process during the plasma etching process against process byproducts adhering to the chamber lining, thereby improving the stability and yield of the plasma etching process. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0042] The above and other features, advantages, and aspects of the various embodiments of the present disclosure will become more apparent with reference to the following detailed description in conjunction with the accompanying drawings. Throughout the drawings, the same or similar reference numerals represent the same or similar elements. It should be understood that the drawings are schematic and that the originals and elements are not necessarily drawn to scale.

[0043] FIG1 shows a flow chart of a method for preparing a film structure provided in an embodiment of the present application;

[0044] FIG2 is a schematic diagram showing a cross-sectional structure of a membrane layer structure provided in an embodiment of the present application. DETAILED DESCRIPTION

[0045] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below with reference to the accompanying drawings.

[0046] In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application may also be implemented in other ways different from those described herein. Those skilled in the art may make similar generalizations without violating the connotation of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0047] As described in the related art, a typical inductively coupled plasma etching process is completed by alternating wafer etching and subsequent chamber in-situ plasma cleaning or non-wafer plasma cleaning workflows.

[0048] Among them, the purpose of plasma cleaning is to remove defects or deposited process by-products generated inside the chamber after the previous plasma etching of the wafer. As the etching process proceeds for a long time, the defects or deposited process by-products continue to increase, making it difficult to process the next wafer in a stable chamber environment. This requires plasma cleaning to clean the chamber deposits after each wafer etching.

[0049] However, the effectiveness of plasma cleaning also depends on the surface condition of the workpiece film structure inside the chamber. Generally, the smoother and flatter the workpiece film structure surface, the easier it is for plasma cleaning to remove process byproducts.

[0050] However, the surface of the chamber liner currently used is often not very smooth and flat, and has high surface defects and roughness, which seriously affects the stability and yield of the plasma etching process.

[0051] Based on the above technical problems, embodiments of the present application provide a film structure and preparation method, comprising: providing a substrate; forming a first ceramic coating on the substrate using an atmospheric plasma spraying process or an evaporation process; forming a second ceramic coating on the side of the first ceramic coating away from the substrate using a suspension plasma spraying process; and forming a third ceramic coating on the side of the second ceramic coating away from the substrate using a chemical vapor deposition process or a physical vapor deposition process. The first ceramic coating prepared by the atmospheric plasma spraying process or the evaporation process in the present application has good interfacial bonding strength, facilitating bonding with the substrate. The second ceramic coating prepared by the suspension plasma spraying process can reduce the roughness and porosity of the film structure. The third ceramic coating prepared by the chemical vapor deposition process or the physical vapor deposition process can further reduce defects such as cracks in the film structure. Thus, a smooth, dense, crack-free film structure surface is obtained. Application of this smooth, dense, crack-free film structure on the chamber lining of a plasma device helps enhance the plasma cleaning function of the plasma cleaning process during the plasma etching process against process byproducts adhering to the chamber lining, thereby improving the stability and yield of the plasma etching process.

[0052] In order to better understand the technical solutions and technical effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.

[0053] Exemplary Methods

[0054] Referring to FIG. 1 , FIG. 1 is a flow chart of a method for preparing a film structure provided in an embodiment of the present application, comprising:

[0055] S101: providing a substrate.

[0056] In the embodiment of the present application, referring to FIG2 , a schematic diagram of a membrane structure provided in the embodiment of the present application is shown.

[0057] Specifically, the material of substrate 10 may include aluminum. Alternatively, the material of substrate 10 may include an aluminum alloy. The aluminum alloy provided in the embodiments of the present application may include copper, silicon, iron, manganese, magnesium, zinc, chromium, and / or titanium. The embodiments of the present application use aluminum or an aluminum alloy as substrate 10, which is relatively lightweight.

[0058] In one possible implementation, the aluminum alloy provided in the embodiment of the present application may be 6061 aluminum plate alloy 6061T. That is, in the embodiment of the present application, the main alloying elements in the 6061 aluminum plate alloy are magnesium and silicon, and it has moderate strength, good corrosion resistance, weldability, and good oxidation performance.

[0059] Optionally, in the embodiment of the present application, a hard oxide treatment may be performed on the surface of the substrate 10. The hard oxide treatment forms a hard, wear-resistant and corrosion-resistant oxide film on the surface of the substrate 10, thereby improving the surface hardness and durability of the substrate 10.

[0060] Then, a multilayer ceramic coating is formed on one side of the substrate 10. The roughness and porosity of the multilayer ceramic coating gradually decrease from the side close to the substrate 10 to the side far from the substrate 10. Thus, the embodiment of the present application achieves a smooth and dense surface by gradually reducing the roughness and porosity of the multilayer ceramic coating.

[0061] Optionally, the multilayer ceramic coating provided in the embodiment of the present application may include a first ceramic coating 11, a second ceramic coating 12 and a third ceramic coating 13. The multilayer ceramic coating is formed on one side of the substrate 10, which may specifically include the following steps: S102-S104.

[0062] S102: forming a first ceramic coating on the substrate by using an atmospheric plasma spraying process or an evaporation process.

[0063] In the embodiment of the present application, the first ceramic coating 11 may be formed on the substrate 10 by using an atmospheric plasma spraying (APS) process or an evaporation process.

[0064] Optionally, the material of the first ceramic coating 11 may include aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet. Optionally, the thickness of the first ceramic coating 11 may be greater than or equal to 50 μm and less than or equal to 500 μm. Optionally, the porosity of the first ceramic coating 11 may be greater than or equal to 3% and less than or equal to 8%. Optionally, the roughness of the first ceramic coating may be greater than or equal to 3 μm and less than or equal to 8 μm.

[0065] Specifically, the first ceramic coating 11 formed using an atmospheric plasma spraying or evaporation process in the present embodiment has a certain degree of porosity and structural defects, but it has good interfacial bonding strength, facilitating bonding with the substrate 10 or subsequently formed film layers. Furthermore, the first ceramic coating 11 is formed quickly and at a low cost.

[0066] However, since the first ceramic coating 11 formed by the atmospheric plasma spraying process or the evaporation process has high surface roughness and a large amount of porosity, it is difficult for plasma cleaning to completely remove the deposition products in the coating pores. Long-term accumulation will affect the chamber process and the stability of the particles.

[0067] That is, due to the limitations of the thin film deposition process, only the first ceramic coating 11 is formed with a rough surface and high porosity, and a crack-free, dense and smooth coating surface cannot be provided, which affects the cleaning ability of plasma cleaning during the plasma etching process.

[0068] Therefore, in the embodiment of the present application, the second ceramic coating 12 is further formed.

[0069] S103: forming a second ceramic coating on a side of the first ceramic coating away from the substrate by using a suspension plasma spraying process.

[0070] In the embodiment of the present application, a suspension plasma spraying process (SPS) may be used to form the second ceramic coating 12 on a side of the first ceramic coating 11 away from the substrate 10 .

[0071] Specifically, the second ceramic coating 12 formed by the suspension plasma spraying process in the embodiment of the present application may be a plasma-etching-resistant ceramic film with reduced porosity and roughness.

[0072] Optionally, the material of the second ceramic coating 12 may include aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet. The thickness of the second ceramic coating 12 may be similar to or the same as that of the first ceramic coating 11, and the surface roughness and porosity of the second ceramic coating 12 may be lower than those of the first ceramic coating 11.

[0073] Optionally, in the embodiment of the present application, the second ceramic coating 12 may include a first ceramic sub-coating 121 and a second ceramic sub-coating 122 to further reduce the roughness and porosity of the film structure.

[0074] Optionally, the thickness of the second ceramic coating 12 may be greater than or equal to 50 μm and less than or equal to 500 μm. The porosity of the second ceramic coating 12 may be less than or equal to 3%. The roughness of the second ceramic coating 12 may be greater than or equal to 1.0 μm and less than or equal to 4 μm.

[0075] The double-layer coating consisting of the first and second ceramic coatings 11, 12 has a low surface roughness (Ra) and porosity, but defects such as cracks still exist on the surface of the second ceramic coating 12. Therefore, the liner surface protected by the double-layer coating consisting of the first and second ceramic coatings 11, 12 is at risk of cracks inducing the deposition and accumulation of process byproducts, which will affect the cleaning effect of the plasma cleaning on the chamber.

[0076] Therefore, in the embodiment of the present application, the third ceramic coating 13 is further formed.

[0077] S104: forming a third ceramic coating on a side of the second ceramic coating away from the substrate by using a chemical vapor deposition process, a physical vapor deposition process, a plasma enhanced chemical vapor deposition process, or a plasma enhanced physical vapor deposition process.

[0078] Specifically, in the embodiment of the present application, the third ceramic coating 13 can be formed on the side of the second ceramic coating 12 away from the substrate 10 by using a chemical vapor deposition process (CVD), a physical vapor deposition process (PVD), a plasma-enhanced chemical vapor deposition process, or a plasma-enhanced physical vapor deposition process.

[0079] Specifically, the third ceramic coating 13 formed by the chemical vapor deposition process or the physical vapor deposition process in the embodiment of the present application can be a dense, plasma-etching-resistant ceramic film with a smooth and defect-free surface.

[0080] Optionally, the material of the third ceramic coating 13 may include aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet. Optionally, the thickness of the third ceramic coating 13 may be greater than or equal to 2 μm and less than or equal to 200 μm. Optionally, the porosity of the third ceramic coating 13 may be less than or equal to 0.1%. Optionally, the roughness of the third ceramic coating may be less than or equal to 1 μm.

[0081] The materials of the first ceramic coating 11, the second ceramic coating 12 and the third ceramic coating 13 provided in the embodiment of the present application are a single type of material, which can ensure the uniformity of the materials of each ceramic coating and avoid the occurrence of coating shedding.

[0082] The third ceramic coating 13 provided in the embodiment of the present application has a relatively small thickness, which can ensure that the surface of the third ceramic coating 13 is smooth and defect-free while preventing the third ceramic coating 13 from cracking, thereby improving the quality of the prepared third ceramic coating 13.

[0083] A third ceramic coating 13 is then applied over the second ceramic coating 12. Ceramic coatings such as yttrium oxide produced by chemical vapor deposition (CVD) or physical vapor deposition (PVD) processes are dense and free of defects such as cracks. Furthermore, deposition on the surface of the second ceramic coating 12 can further reduce the coating's surface roughness (e.g., <1 μm), eliminating the porosity and cracks inherent in the second ceramic coating 12. Therefore, a plasma etching process can be used to sequentially deposit the first ceramic coating 11, the second ceramic coating 12, and the third ceramic coating 13 on the surface of an aluminum workpiece, such as a liner, to achieve a smooth, dense, crack-free surface, enhancing the plasma cleaning function of the chamber during the plasma etching process.

[0084] It should be noted that if the third ceramic coating 13 is directly prepared and deposited on the surface of the first ceramic coating 11, since the third ceramic coating 13 is relatively thin, the surface roughness of the lining protected by the first ceramic coating 11 / third ceramic coating 13 is relatively high (such as 5-7um), which is not significantly different from the roughness of the first ceramic coating 11 (3-8um), which will affect the cleaning effect of plasma cleaning on the chamber during the plasma etching process.

[0085] Therefore, the embodiment of the present application chooses to deposit a third ceramic coating 13 on the second ceramic coating 12 to gradually improve the roughness of the coating surface, thereby obtaining a smooth, dense, crack-free film structure surface for application in the chamber lining of a plasma equipment, thereby enhancing the cleaning function of plasma cleaning on process by-products attached to the chamber lining.

[0086] An embodiment of the present application provides a film structure and preparation method, comprising: providing a substrate; forming a first ceramic coating on the substrate using an atmospheric plasma spraying process or an evaporation process; forming a second ceramic coating on the side of the first ceramic coating away from the substrate using a suspension plasma spraying process; and forming a third ceramic coating on the side of the second ceramic coating away from the substrate using a chemical vapor deposition process or a physical vapor deposition process. The first ceramic coating prepared by the atmospheric plasma spraying process or the evaporation process in the present application has good interfacial bonding strength, facilitating bonding with the substrate. The second ceramic coating prepared by the suspension plasma spraying process can reduce the roughness and porosity of the film structure. The third ceramic coating prepared by the chemical vapor deposition process or the physical vapor deposition process can further reduce defects such as cracks in the film structure. This results in a smooth, dense, crack-free film structure surface. Application of this smooth, dense, crack-free film structure on the chamber lining of a plasma device can enhance the plasma cleaning function of the plasma cleaning process during the plasma etching process against process byproducts adhering to the chamber lining, thereby improving the stability and yield of the plasma etching process.

[0087] Exemplary Structure

[0088] The present application provides a film structure, which is applied to plasma equipment, including plasma etching equipment and plasma coating equipment, and is prepared using the above-mentioned method, including:

[0089] A substrate 10; a multilayer ceramic coating located on one side of the substrate 10; the roughness and porosity of the multilayer ceramic coating gradually decrease from a side close to the substrate 10 to a side away from the substrate 10.

[0090] In one possible implementation, the multilayer ceramic coating may include a first ceramic coating 11, a second ceramic coating 12, and a third ceramic coating 13. FIG2 is a schematic diagram of a film structure provided in an embodiment of the present application, which may be prepared using the method described above, including:

[0091] substrate 10;

[0092] a first ceramic coating 11 located on one side of the substrate 10;

[0093] a second ceramic coating 12 located on a side of the first ceramic coating 11 away from the substrate 10;

[0094] The third ceramic coating 13 is located on a side of the second ceramic coating 12 away from the substrate 10 .

[0095] In a possible implementation, the second ceramic coating 12 includes a first ceramic sub-coating 121 and a second ceramic sub-coating 122 .

[0096] An embodiment of the present application provides a film structure. A method for preparing the film structure includes: providing a substrate; forming a first ceramic coating on the substrate using an atmospheric plasma spraying process or an evaporation process; forming a second ceramic coating on the side of the first ceramic coating away from the substrate using a suspension plasma spraying process; and forming a third ceramic coating on the side of the second ceramic coating away from the substrate using a chemical vapor deposition process or a physical vapor deposition process. The first ceramic coating prepared by the atmospheric plasma spraying process or the evaporation process in the present application has good interfacial bonding strength, facilitating bonding with the substrate. The second ceramic coating prepared by the suspension plasma spraying process can reduce the roughness and porosity of the film structure. The third ceramic coating prepared by the chemical vapor deposition process or the physical vapor deposition process can further reduce defects such as cracks in the film structure. This results in a smooth, dense, crack-free film structure surface. Application of this smooth, dense, crack-free film structure on the chamber lining of a plasma device can help enhance the plasma cleaning function of process byproducts adhering to the chamber lining during a plasma etching process, thereby improving the stability and yield of the plasma etching process.

[0097] The various embodiments in this specification are described in a progressive manner. Similar parts between the various embodiments can be referred to in conjunction with each other. Each embodiment focuses on the differences from the other embodiments. In particular, the structural embodiments are described briefly because they are generally similar to the method embodiments. For relevant parts, refer to the description of the method embodiments.

[0098] The above is only a preferred embodiment of the present application. Although the present application has been disclosed as a preferred embodiment, it is not intended to limit the present application. Any technician familiar with the art can use the above-disclosed methods and technical contents to make many possible changes and modifications to the technical solution of the present application without departing from the scope of the technical solution of the present application, or modify it into an equivalent embodiment with equivalent changes. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application are still within the scope of protection of the technical solution of the present application.

Claims

1. A method for preparing a film structure, characterized in that: The film layer structure is applied to plasma equipment, including: providing a substrate; A multilayer ceramic coating is formed on one side of the substrate; the roughness and looseness of the multilayer ceramic coating gradually decrease from the side close to the substrate to the side far away from the substrate.

2. The method according to claim 1, characterized in that The multi-layer ceramic coating comprises a first ceramic coating, a second ceramic coating and a third ceramic coating, and the multi-layer ceramic coating is formed on one side of the substrate, comprising: forming a first ceramic coating on the substrate by using an atmospheric plasma spraying process or an evaporation process; Using a suspension plasma spraying process, forming a second ceramic coating on a side of the first ceramic coating away from the substrate; A third ceramic coating is formed on a side of the second ceramic coating away from the substrate by using a chemical vapor deposition process, a physical vapor deposition process, a plasma enhanced chemical vapor deposition process or a plasma enhanced physical vapor deposition process.

3. The method according to claim 1, characterized in that The material of the substrate includes aluminum or aluminum alloy.

4. The method according to claim 2, characterized in that: The material of the first ceramic coating includes aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride or yttrium aluminum garnet.

5. The method according to claim 2, characterized in that: The material of the second ceramic coating includes aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride or yttrium aluminum garnet.

6. The method according to claim 2, characterized in that The material of the third ceramic coating includes aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride or yttrium aluminum garnet.

7. The method according to claim 2, characterized in that: The second ceramic coating includes a first ceramic sub-coating and a second ceramic sub-coating.

8. The method according to claim 2, characterized in that: The thickness of the first ceramic coating is greater than or equal to 50 μm and less than or equal to 500 μm.

9. The method according to claim 2, characterized in that: The thickness of the second ceramic coating is greater than or equal to 50 μm and less than or equal to 500 μm.

10. The method according to claim 2, characterized in that The thickness of the third ceramic coating is greater than or equal to 2 μm and less than or equal to 200 μm.

11. The method according to claim 2, characterized in that The porosity of the first ceramic coating is greater than or equal to 3% and less than or equal to 8%.

12. The method according to claim 2, characterized in that: The porosity of the second ceramic coating is less than or equal to 3%.

13. The method according to claim 2, characterized in that The porosity of the third ceramic coating is less than or equal to 0.1%.

14. The method according to claim 2, characterized in that The roughness of the first ceramic coating is greater than or equal to 3 μm and less than or equal to 8 μm.

15. The method according to claim 2, characterized in that The roughness of the second ceramic coating is greater than or equal to 1.0 μm and less than or equal to 4 μm.

16. The method according to claim 2, characterized in that The roughness of the third ceramic coating is less than or equal to 1 μm.

17. The method according to claim 3, characterized in that The aluminum alloy includes copper, silicon, iron, manganese, magnesium, zinc, chromium and / or titanium.

18. The method according to claim 17, characterized in that The aluminum alloy is 6061 aluminum plate alloy.

19. A film structure, characterized in that: The film structure is applied to plasma equipment, including plasma etching equipment and plasma coating equipment, and is prepared by the method according to any one of claims 1 to 19, including: substrate; A multilayer ceramic coating is located on one side of the substrate; the roughness and looseness of the multilayer ceramic coating gradually decrease from the side close to the substrate to the side far away from the substrate.

20. The structure according to claim 19, characterized in that The multi-layer ceramic coating comprises a first ceramic coating, a second ceramic coating and a third ceramic coating; The materials of the first ceramic coating, the second ceramic coating and the third ceramic coating include aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride or yttrium aluminum garnet.

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