Short-process preparation method for hybrid passivated back-contact cell and use thereof

Through the high-temperature annealing crystallization process of phosphorus diffusion and integrated temperature-raising propulsion diffusion on the front of the silicon wafer, the preparation process of back contact solar cells is simplified, the problems of long process, high equipment investment and insufficient short circuit current are solved, and more efficient battery performance is achieved.

WO2025086525A1 Publication Date: 2025-05-01GOLDEN SOLAR (QUANZHOU) NEW ENERGY TECH CO LTD
7 Cites 7 Cited by

Patent Information

Application Number
PCT/CN2024/081025
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-10-25
Filing Date
2024-03-11
Publication Date
2025-05-01

AI Technical Summary

Technical Problem

The existing back contact solar cells have a long process flow, high equipment investment, and large parasitic absorption of the third semiconductor layer, resulting in insufficient short-circuit current of the battery.

Method used

The short-process preparation method of combined passivation back contact battery is adopted, including phosphorus diffusion on the front of the silicon wafer to form a third semiconductor diffusion zone, and integrated temperature-raising propulsion diffusion during the high-temperature annealing and crystallization process, simplifying the process flow and reducing the amount of equipment usage.

Benefits of technology

It significantly improves the short circuit current of the battery, improves the film density, reduces the parasitic absorption of the third semiconductor layer, reduces the cost of equipment investment, and improves the conversion efficiency and yield of the battery.

✦ Generated by Eureka AI based on patent content.
Patent Text Reader

Abstract

The present disclosure belongs to the technical field of the preparation of hybrid passivated back-contact cells, and specifically relates to a short-process preparation method for a hybrid passivated back-contact cell and the use thereof. The short-process preparation method comprises: S1, texturing both surfaces of a silicon wafer; S2, subjecting the front surface of the silicon wafer to phosphorus diffusion, so as to form a third semiconductor diffusion region, wherein the process of phosphorus diffusion comprises the steps of first performing low-temperature diffusion and then performing cooling and discharging, and during the period, heating is not performed to promote diffusion; S3, removing a diffusion layer that detours to and coats the back surface and a phosphorosilicate glass layer on the front surface, which are both obtained in S2; S4, sequentially depositing a first semiconductor layer and a mask layer on the back surface obtained in S3, and subjecting same to high-temperature annealing crystallization at the same time; S5, forming a second semiconductor opening region; and S6, forming an anti-reflection layer on the front surface of the silicon wafer. In the present disclosure, a passivation effect is good, and the film density is better; moreover, defects such as film holes are effectively ameliorated, the cell conversion efficiency and the cell yield are substantially improved, and the technological process is greatly simplified, thereby greatly reducing the equipment investment cost.
Need to check novelty before this filing date? Find Prior Art