Optoelectronic device for detecting a gas

Abstract

An optoelectronic device for detecting a gas is specified. According to one embodiment, the optoelectronic device (1) for detecting a gas comprises a radiation-emitting element (4) configured for emitting an electromagnetic radiation, a measurement unit (5) comprising a measurement region (51) and a reference region (52), and a detector unit (6) comprising at least a first photodetector region (61) and a second photodetector region (62), wherein the measurement region (51) is arranged in a first beam path of the electromagnetic radiation between the radiation-emitting element (4) and the first photodetector region (61), wherein the reference region (52) is arranged in a second beam path of the electromagnetic radiation between the radiation-emitting element (4) and the second photodetector region (62), and wherein the optoelectronic device (1) is surface mountable. In particular, the radiation-emitting element (4) comprises a micro-LED.

Description

[0001] Description

[0002] OPTOELECTRONIC DEVICE FOR DETECTING A GAS

[0003] An optoelectronic device for detecting a gas is speci fied .

[0004] It is an obj ect to provide a compact optoelectronic device for detecting a gas .

[0005] An optoelectronic device for detecting a gas is speci fied . In particular, the optoelectronic device is configured for detecting the presence of a gas by using electromagnetic radiation . For example , a change of an intensity, a wavelength, a frequency and / or a polari zation of the electromagnetic radiation is detectable in the presence of the gas . In particular, a level of the change depends on an amount of the gas present . For example , i f more gas is present , the change will be more pronounced . For instance , the optoelectronic device for detecting a gas is configured for detecting a gas in a concentration of between and including 0 . 01 % and 4 % . In particular, the optoelectronic device is a gas sensor . For example , the gas is hydrogen (H2) or ammonia (NH3) or a harmful gas such as SOXor NOX.

[0006] According to at least one embodiment , the optoelectronic device comprises a radiation-emitting element configured for emitting an electromagnetic radiation . In particular, the radiation-emitting element is a radiation-emitting diode such as a light-emitting diode ( LED) . Here and in the following, the terms light and electromagnetic radiation are used interchangeable . In particular, the electromagnetic radiation comprises a wavelength or a wavelength range of the ultraviolet (UV) wavelength range , the visible (VIS ) wavelength range and / or the infrared ( IR) wavelength range . For example , the electromagnetic radiation is radiation in the infrared wavelength range . In particular, the electromagnetic radiation comprises a wavelength or a wavelength range between and including 1100 nm and 1500 nm, for example between and including 1200 nm and 1400 nm or between and including 1250 nm and 1350 nm, for instance between and including 1280 nm and 1300 nm .

[0007] According to at least one embodiment , the optoelectronic device comprises a measurement unit comprising a measurement region and a reference region . In particular, the measurement unit is configured for detecting the gas . For example , the measurement region of the measurement unit is configured for interacting with the gas , for instance binding the gas to the measurement region . In particular, the reference region is configured for not interacting with the gas .

[0008] According to at least one embodiment , the optoelectronic device comprises a detector unit comprising at least a first photodetector region and a second photodetector region . In particular, each photodetector region is configured for detecting an electromagnetic radiation incident on the respective photodetector region . For example , each photodetector region is configured for detecting an intensity, a wavelength, a frequency, and / or a polari zation of the incident electromagnetic radiation . In particular, the first photodetector region and the second photodetector region are operable independently of one another . For example , the first photodetector region comprises or consists of a first photodiode and the second photodetector region comprises or consists of a second photodiode . Alternatively, the first photodetector region can be a first part of a two- part photodiode and the second photodetector region can be a second part of the two-part photodiode . The photodetector unit can comprise a plurality of photodetector regions . For example , the photodetector unit can comprise a plurality of first photodetector regions and a plurality of second photodetector regions .

[0009] According to at least one embodiment , the measurement region is arranged in a first beam path of the electromagnetic radiation between the radiation-emitting element and the first photodetector region . In particular, the first beam path is a path of at least a part of the electromagnetic radiation starting from the radiation-emitting element and ending at the first photodetector region . In other words , the first photodetector region is configured for detecting a measurement signal . For example , the first beam path is configured in such a way that the electromagnetic radiation passes through the measurement region, in particular through the measurement unit , only once . In other words , the measurement of the measurement signal is performed in transmission .

[0010] According to at least one embodiment , the reference region is arranged in a second beam path of the electromagnetic radiation between the radiation-emitting element and the second photodetector region . In particular, the second beam path is a path of at least a part of the electromagnetic radiation starting from the radiation-emitting element and ending at the second photodetector region . In other words , the second photodetector region is configured for detecting a reference signal . For example , the second beam path is configured in such a way that the electromagnetic radiation passes through the reference region, in particular through the measurement unit , only once . In other words , the measurement of the reference signal is performed in transmission . In particular, the first beam path and the second beam path are independent of one another . For example , the first beam path and the second beam path are separate beam paths . The first beam path and the second beam path can be parallel to one another . For instance , the first beam path and the second beam path do not overlap .

[0011] According to at least one embodiment , the optoelectronic device is surface mountable . A surface mountable optoelectronic device is , in particular, directly mountable onto the surface of a printed circuit board ( PCB ) . For example , the optoelectronic device is referred to as a surface-mount device ( SMD) . Here and in the following, mountable or mounted components or devices are attachable or attached to an underlying surface such as a substrate , a housing, or a printed circuit board . The components or devices can be attached by a connection mean such as a soldered contact or an adhesive layer . In particular, the optoelectronic device for detecting a gas is designed as a surface mountable package . For example , the optoelectronic device is a gas sensor designed as a surface mountable package .

[0012] According to at least one embodiment , the optoelectronic device comprises a radiation-emitting element configured for emitting an electromagnetic radiation, a measurement unit comprising a measurement region and a reference region, and a detector unit comprising at least a first photodetector region and a second photodetector region, wherein the measurement region is arranged in a first beam path of the electromagnetic radiation between the radiation-emitting element and the first photodetector region, wherein the reference region is arranged in a second beam path of the electromagnetic radiation between the radiation-emitting element and the second photodetector region, and wherein the optoelectronic device is surface mountable .

[0013] It is an idea of the present application to provide a surface mountable optoelectronic device for detecting a gas comprising all components of a gas detecting system in a compact design . The optoelectronic device is simple and costef ficient . The measurement unit having a measurement region and a reference region has an uncomplicated and thus insensitive design and, due to the reference region, allows a reference measurement . The reference measurement can be performed automatically without using valves or reference gases or reference chambers . This can advantageously increase the length of use and the li fe time of the optoelectronic device . Due to the reference measurement , the measurement for detecting the gas is independent of factors such as a color or a spectral composition of the radiation-emitting element which can change during the li fetime of the radiationemitting element , for example , due to deposition of dust on the radiation-emitting element . Thus , it is advantageous to base the measurement on a relative measurement result determined by comparing the measurement signal and the reference signal instead of only using the absolute value of the measurement signal . In other words , the optoelectronic device allows to detect a relative change in the measurement signal compared to the reference signal . The measurement result is thus independent of the absolute intensities detected by the photodetector regions . Further, the reference measurement suppresses disturbance variables and improves the signal-to-noise ratio . The signal-to-noise ratio is further improved by using a first photodetector region for providing the measurement signal and a second photodetector region for providing the reference signal . By arranging the measurement unit in the beam paths between radiation-emitting element and detector unit , the measurements of the measurement signal and the reference signal are performed in transmission thereby using an uncomplicated and thus reliable measurement method .

[0014] According to at least one embodiment , the optoelectronic device comprises a substrate . In particular, the substrate is configured for providing a support and / or mounting the components of the optoelectronic device such as the radiation-emitting element , the measurement unit , and the detector unit . For example , the substrate is a SMT-substrate . Here and in the following, SMT is the abbreviation for surface mount technology . In particular, a SMT-substrate only comprises solderable connection surfaces or solderable connection pins for connecting the SMT substrate to , for example , a printed circuit board . In other words , the SMT- substrate is free of wire bonds . A SMT-substrate can advantageously be provided cost-ef f iciently . An optoelectronic device comprising a SMT-substrate is advantageously easy to install , in particular easy to integrate into a control system such as a control system of a heating system .

[0015] According to at least one embodiment , electrical connection pads of the optoelectronic device are exclusively arranged on the side of the substrate facing away from the radiationemitting element , the measurement unit , and the detector unit . In particular, all electrical connection pads of the optoelectronic device are arranged on one side of the substrate , wherein the components of the optoelectronic device such as the radiation-emitting element , the measurement unit , and the detector unit are arranged on the opposite side of the substrate . A substrate having electrical connection pads exclusively facing away from the components of the optoelectronic device can advantageously be surface mounted simply and ef ficiently .

[0016] According to at least one embodiment , the gas is hydrogen . Hydrogen gas is used as a fossil- free energy carrier, for example as hydrogen fuel . Hydrogen gas is highly flammable and forms explosive mixtures with air . The explosive reactions may be triggered by spark, heat , or sunlight . Thus , for a safe introduction and distribution of hydrogen gas for private mobility and home technology such as heating or energy storage , cost-ef ficient hydrogen sensors are needed . A simple and cost-ef ficient optoelectronic device for detecting hydrogen in a compact design can advantageously be used for increasing the safety of such applications .

[0017] According to at least one embodiment , the optoelectronic device comprises a housing . The housing is configured for protecting the components of the optoelectronic device such as the radiation-emitting element , the measurement unit , and the detector unit against damage , in particular, by providing a protective barrier against external influences such as a deposition of dust on sensitive surfaces of the components . In particular, the housing is impermeable to the electromagnetic radiation emitted by the radiation-emitting element . In this instance , the environment surrounding the optoelectronic device is protected against the electromagnetic radiation emitted by the radiation-emitting element . Further, the optoelectronic device , in particular the detector unit , is protected against electromagnetic radiation from external radiation sources located outside the optoelectronic device . The housing can further be impermeable to electromagnetic radiation having a di f ferent wavelength or wavelength range than the electromagnetic radiation emitted by the radiation-emitting element . A housing, in particular a radiation-impermeable housing, can advantageously improve the signal-to-noise ratio and suppress disturbance variables .

[0018] According to at least one embodiment , the housing is formed by inj ection molding . An inj ection molded housing is stable and can advantageously be provided cost-ef f iciently .

[0019] According to at least one embodiment , the substrate and the housing surround a volume , in particular completely . In particular, the volume is a three-dimensional space surrounded by side surfaces . The substrate can cover a side surface of the volume and the housing can cover the remaining side surfaces of the volume . For example , the volume is completely surrounded by the substrate and the housing in such a way that electromagnetic radiation, in particular at least electromagnetic radiation having the wavelength or the wavelength range emitted by the radiation-emitting element , from external light sources cannot enter the volume . Surfaces of the housing facing towards the volume can be referred to as inside surfaces of the housing .

[0020] According to at least one embodiment , the radiation-emitting element , the measurement unit , and the detector unit are arranged in the volume . In particular, the radiation-emitting element , the measurement unit , and the detector unit are mounted on the substrate and / or on inside surfaces of the housing within the volume . Thus , a compact design of the optoelectronic device can advantageously be reali zed . According to at least one embodiment , the housing comprises a gas inlet . In particular, the gas inlet is configured for providing the gas within the volume . For example , the gas inlet is an opening in the housing through which the gas can flow into the volume . A gas inlet is a simple way for providing the gas within the volume .

[0021] According to at least one embodiment , the gas inlet is covered with a covering impermeable to the electromagnetic radiation emitted by the radiation-emitting element . In particular, the covering is permeable for the gas . In other words , the gas can pass through the covering, whereas electromagnetic radiation having at least the wavelength or the wavelength range of the electromagnetic radiation emitted by the radiation-emitting element cannot pass through the covering . For example , the covering is impermeable for an external electromagnetic radiation from radiation sources outside the optoelectronic device , in particular external electromagnetic radiation having at least the wavelength or the wavelength range emitted by the radiation-emitting element . In particular, the covering is a porous plastic, for example , a plastic layer or plate having pores permeable for the gas . Alternatively, the covering can be a meander perforated plate . For example , a meander perforated plate comprises pores through the plate that are not straight , but bend . In this instance , gas can pass through the pores in the meander perforated plate , whereas the meander perforated plate is impermeable for electromagnetic radiation . A covering on the gas inlet can advantageously be stable and provide a protection against an interfering influence of external electromagnetic radiation . According to at least one embodiment , the detector unit comprises an integrated circuit . In particular, the integrated circuit is configured for controlling the optoelectronic device , in particular the radiation-emitting element , for signal processing of the measurement signal and the reference signal , and for outputting a measurement result . Signal processing can include an analysis of the measurement signal and the reference signal and a determination of the measurement result . In particular, the integrated circuit is a monolithic integrated circuit . For example , the integrated circuit is an application-speci fic integrated circuit (AS IC ) . For instance , the first photodetector region and the second photodetector region are both arranged on a surface of the integrated circuit . An integrated circuit can advantageously combine the optical measurement and the signal processing in one compact optoelectronic device . Using a cost-ef ficient and standardi zed integrated circuit advantageously facilitates the integration of the optoelectronic device in a control system of for example a heating system .

[0022] According to at least one embodiment , the measurement region and / or the reference region comprises a transparent plate , a measurement stack, and a protective layer . The measurement stack is arranged between the transparent plate and the protective layer . In particular, the transparent plate , the measurement stack, and the protective layer are arranged in such a way that the transparent plate and the protective layer are in direct mechanical contact in a region laterally surrounding the measurement stack . Thus , the measurement stack is surrounded by the transparent plate and the protective layer from all sides . In particular, the transparent plate is transparent for the electromagnetic radiation emitted by the radiation-emitting element . For example , the transparent plate is impermeable for the gas . For instance , the transparent plate is a glass plate .

[0023] In particular, the measurement stack is configured for interacting with the gas . For example , gas molecules bind to and / or chemically react with the material of the measurement stack . The binding and / or chemical reaction can cause a change of a transmission of the electromagnetic radiation through the measurement region of the measurement unit . In particular, the measurement stack comprises or consists of a metal or metal alloy . For example , the measurement stack comprises or consists of a magnesium alloy such as a Pd- capped Mg82Tii8alloy, a Mg82Zri8alloy, a Pd-capped YsoMgso alloy, a tantalum palladium alloy such as Tao. gPdo. i , or a palladium gold copper alloy such as Pdo.5Auo.35Cuo. o5 • In the case of the gas being hydrogen, hydrogen reacts with a metal that is present in the measurement stack thereby forming metal hydrides . The metal hydrides can absorb a part of the electromagnetic radiation of the first beam path thereby, for example , changing the intensity of the measurement signal . In particular, the formation of metal hydrides changes a transparency of the measurement region depending on the amount of hydrogen gas present in the optoelectronic device .

[0024] In particular, the measurement stack comprises at least one measurement layer . For example , the measurement stack comprises one measurement layer, two measurement layer or more than two measurement layers . Here and in the following, measurement layers are layers of the measurement stack, in particular metal layers or metal alloy layers , without protective layers . It is possible that not all materials suitable for the measurement stack adhere equally well to one another and / or to the transparent plate and / or the protective layer . By using at least one measurement layer in the measurement stack, an adhesion of the components and layers of the measurement unit can advantageously be enhanced and tailored to speci fic applications .

[0025] For example , the measurement stack comprises at least a first measurement layer and a second measurement layer arranged between the first measurement layer and the protective layer . For example , the first measurement layer and the second measurement layer comprise or consist of a metal or a metal alloy . For instance , the metal alloy is a tantalum palladium alloy such as Tao. gPdo. i or a palladium gold copper alloy such as Pdo. eAuo. ssCuo. os • A measurement stack comprising a first measurement layer of a tantalum palladium alloy such as Tao . gPdo . i and a second measurement layer of a palladium gold copper alloy such as Pdo .6Auo .35Cuo . o5 is advantageously suited for detecting hydrogen gas .

[0026] In particular, the protective layer is configured for protecting the measurement stack against damage . For example , the protective layer is permeable for the gas , in particular for hydrogen . Thus , during operation of the optoelectronic device , the measurement region comes into contact to the gas . The gas can pass through the protective layer to reach the measurement stack in the measurement region . The gas can interact with the measurement stack and create a measurement signal at the first photodetector region . For example , the protective layer comprises or consists of polytetrafluoroethylene ( PTFE ) . According to at least one embodiment , the reference region further comprises a gas-impermeable layer . The gas- impermeable layer is arranged between the measurement stack and the protective layer . In other words , the reference region comprises the transparent plate , the measurement stack, the gas-impermeable layer, and the protective layer in this order . For example , gas-impermeable layer is transparent for electromagnetic radiation emitted by the radiationemitting element . For instance , the gas-impermeable layer comprises or consists of silicon dioxide ( SiCy ) .

[0027] In particular, the gas-impermeable layer is configured in such a way that the gas passes through the gas-impermeable layer signi ficantly slower than through the protective layer . It should be noted that the gas-impermeable layer may not be completely impermeable for the gas . However, a gust transport through the gas-impermeable layer is very slow compared to any layers described herein as gas-permeable . For example , the transparent plate , the measurement stack, and the gas- impermeable layer are arranged in such a way that the transparent plate and the gas-impermeable layer are in direct mechanical contact in a region laterally surrounding the measurement stack . Thus , the measurement stack is surrounded by the transparent plate and the gas-impermeable layer from all sides . During operation of the optoelectronic device , the reference region comes into contact to the gas . However, due to the gas-impermeable layer, the gas cannot pass through the gas-impermeable layer and through the transparent plate at a first contact to the gas to the reference region . Thus , the gas cannot reach the measurement stack in the reference region at the same time that the gas reaches the measurement stack in the measurement region . Thus , i f a gas comes into contact with the measurement unit for the first time , the measurement signal is di f ferent from the reference signal and the optoelectronic device determines a measurement result that indicates the presence of the gas . A reference region with a gas impermeable layer advantageously allows to perform reference measurements and thus increase the signal-to-noise ratio .

[0028] In particular, the reference region only di f fers from the measurement region in the presence of the gas-impermeable layer . Thus , the electromagnetic radiation passes through a similar layer stack along the first beam path and along the second being part . This advantageously ensures a more accurate measurement result .

[0029] According to at least one embodiment , the measurement region and / or the reference region further comprises a cover layer . The cover layer is arranged on a side of the protective layer facing away from the measurement stack . In particular, the cover layer is transparent for electromagnetic radiation emitted by the radiation-emitting element , but is not transparent for electromagnetic radiation having a di f ferent wavelength or wavelength range . For example , the cover layer is transparent for electromagnetic radiation in the infrared wavelength range , but is not transparent for electromagnetic radiation in the UV wavelength range and / or visible wavelength range . For instance , the cover layer comprises or consists of a black thin plastic layer . Alternatively, the cover layer comprises or consists of porous silicon . A cover layer can advantageously be used as an alternative for a radiation-impermeable housing .

[0030] According to at least one embodiment , the transparent plate is arranged on a side of the measurement region and / or the reference region facing away from a first part of the volume . The first part of the volume is configured to contain the gas . In particular, the first part of the volume contains the gas during operation of the optoelectronic device . For example , the measurement unit can divide the volume in at least two parts . In this case , the transparent plate can face towards a second part of the volume . It is also possible that the gas fills the entire volume during operation of the device . With the transparent plate facing away from the first part of volume , the gas comes into contact with the measurement stack by passing through the gas-permeable protective layer in the measurement region . Such a configuration advantageously allows to detect the gas simply and fast .

[0031] According to at least one embodiment , the measurement region and the reference region are arranged directly adj acent to one another . In particular, the measurement region and the reference region share the same transparent plate . In this case , the measurement unit is formed as one component . The measurement stack can be formed as a two-part measurement stack with the two parts arranged directly adj acent to one another on the same transparent plate . One of the two parts can form the measurement region and the other part can form the reference region . The protective layer can also be formed as a two-part protective layer or as one protective layer covering both parts of the two-part measurement stack . The reference region further comprises the gas-impermeable layer . The first photodetector region and the second photodetector region can also be arranged directly adj acent to one another . For example , the first beam path and the second beam path are parallel to one another . A measurement unit having the measurement region and the reference region directly adj acent to one another can advantageously be produced and mounted easily and cost-ef f iciently .

[0032] According to at least one embodiment , the measurement region and the reference region are arranged on di f ferent sides of the radiation-emitting element . In other words , the radiation-emitting element is arranged between the measurement region and the reference region . In particular, the measurement unit is formed in two parts , wherein one part comprises the measurement region and the other part comprises the reference region . For example , the measurement unit and the reference unit each comprise a transparent plate , wherein the transparent plates are spaced apart . In particular, the first photodetector region and the second photodetector region are also arranged on di f ferent sides of the radiationemitting element such that the first beam path that is transmitted through the measurement region impinges on the first photodetector region and the second beam path that is transmitted through the reference region impinges on the second photodetector region .

[0033] According to at least one embodiment , at least one inside surface of the housing is di f fusely reflective . Here and in the following, di f fuse reflection means the reflection of electromagnetic radiation in all directions , when the electromagnetic radiation impinges on the surface of a material . The di f fuse reflection can be due to multiple reflections by microscopic irregularities inside the material such as grain boundaries of a polycrystalline material . Alternatively or additionally, the di f fuse reflection can be due to a rough surface such as a naturally rough surface or a roughened surface . In particular, all inside surfaces of the housing are di f fusely reflective . By di f fusely reflective inside surfaces of the housing, the radiation emitted by the radiation-emitting element can advantageously easily be guided along the first beam path and the second beam path and it can be ensured that the radiation reaches the first photodetector region and the second photodetector region .

[0034] According to at least one embodiment , the optoelectronic device comprises at least one structure for separating the first beam path and the second beam path at least partially, in particular completely . In particular, the first beam path and the second beam path are separated by the at least one structure in a region between the measurement unit and the detector unit . For example , the at least one structure is configured in such a way that the electromagnetic radiation of the first beam path and the second beam path is guided separately after the electromagnetic radiation has been transmitted through the measurement region and the reference region, respectively . This can advantageously reduce or prevent cross-talk between the measurement signal and the reference signal on the photodetector regions . In particular, the first beam path and the second beam path can be free of a structure or comprise a further structure in a region between the radiation-emitting element and the measurement unit . For example , the at least one structure is arranged, in particular mounted, on the housing and / or the substrate . In particular, the at least one structure is impermeable for the electromagnetic radiation emitted by the radiation-emitting element . Additionally, the at least one structure is impermeable for the electromagnetic radiation of the first beam path and the second beam path after they have been transmitted through the measurement unit . For example , the at least one structure is a fin . By using a structure , the beam paths for creating the measurement signal and for creating the reference signal can advantageously be separated simply and cost-ef f iciently . Further, cross-talk between the measurement signal and the reference signal can be reduced or prevented .

[0035] According to at least one embodiment , the optoelectronic device comprises at least one mirror for directing the electromagnetic radiation emitted by the radiation-emitting element along the first beam path and the second beam path . In other words , the electromagnetic radiation is directed by at least one mirror from the radiation-emitting element through the measurement unit to the detector unit . In particular, the mirror is specularly reflective . For example , the mirror is a plane mirror . For instance , the optoelectronic device is free of structures for separating the first beam path and the second beam path . In particular the at least one mirror is arranged, in particular mounted, on the housing and / or the substrate . The at least one mirror can be arranged between the radiation-emitting element and the measurement unit and / or between the measurement unit and the detector unit . For instance , the optoelectronic device comprises at least two mirrors , wherein a first mirror is arranged between the radiation-emitting element and the measurement unit and a second mirror is arranged between the measurement unit and the detector unit . By using mirrors to direct the electromagnetic radiation, the beam paths can be more defined . More defined beam paths allow the same ef fect of the electromagnetic radiation by using a smaller amount of electromagnetic radiation, thus advantageously allowing the optoelectronic device to be more energy-ef ficient . Further, due to the more defined beam paths , the use of mirrors also eliminates the need for structures to separate the beam paths . According to at least one embodiment , the detector unit is mounted on substrate . In particular, the first photodetector region and / or the second photodetector region are arranged in the detector unit on a side of the detector unit facing away from the substrate . For example , the integrated circuit of the detector unit is mounted on the substrate and the first photodetector region and the second photodetector region are arranged on a side of the integrated circuit facing away from the substrate . By mounting the detector unit on the substrate , electrical contacts to the detector unit can advantageously easily be established through the substrate .

[0036] According to at least one embodiment , the measurement unit is mounted on the detector unit . In particular, the measurement unit is in direct mechanical contact to the detector unit . Here and in the following, direct mechanical contact between the measurement unit and the detector unit includes a contact via a connection mean that directly attaches the measurement unit to the detector unit such an adhesive layer . For example , the measurement unit is arranged on the detector unit in such a way that the measurement region is arranged on or above or in direct contact to the first photodetector region and the reference region is arranged on or above or in direct contact to the second photodetector region . By mounting the measurement unit on the detector unit , the beam paths between the measurement unit and the first photodetector region and the reference region and the second photodetector region, respectively, are short such that a cross-talk between the beam paths can advantageously be reduced or prevented . According to at least one embodiment , the radiation-emitting element and the measurement unit are mounted on the substrate . In particular, the radiation-emitting element , the measurement unit , and the detector unit are mounted on the substrate . For example , the measurement unit is arranged between the radiation-emitting element and the detector unit . In particular, the measurement unit is mounted on the substrate in such a way that a main extension plane of the measurement region and / or the reference region is arranged perpendicular to a main extension plane of the substrate . For example , the transparent plate of the measurement region and / or the reference region is facing towards the radiationemitting element and the protective layer of the measurement region and / or the reference region is facing towards the detector unit . In this instance , the gas inlet of the housing is arranged between the measurement unit and the detector unit . Alternatively, the protective layer of the measurement region and / or the reference region is facing towards the radiation-emitting element and the transparent plate of the measurement region and / or the reference region is facing towards the detector unit . In this instance , the gas inlet of the housing is arranged between the radiation-emitting element and the measurement unit . By mounting the radiationemitting element and the measurement unit on the substrate , electrical contacts can advantageously be established easily through the substrate and the optoelectronic device can advantageously be provided simply and cost-ef f iciently .

[0037] According to at least one embodiment , a radiation exit surface of the radiation-emitting element faces the substrate and the measurement unit is mounted on the substrate or the detector unit . Here and in the following, the electromagnetic radiation of the radiation-emitting element is emitted by the radiation exit surface . In particular, the radiation-emitting element is mounted on an inside surface of the housing facing the substrate . In this instance , the radiation-emitting element can be electrically contacted through the substrate by an electrical connection such as a wire bond or a flexible printed circuit board .

[0038] In particular, the detector unit is mounted on the substrate and the photodetector regions of the detector unit face towards the radiation exit surface . In other words , the radiation-emitting element , in particular the radiation exit surface , and the detector unit , in particular the first photodetector region and the second photodetector region, are arranged vis-a-vis . For example , the first beam path and / or the second beam path follow a linear path between radiationemitting element and detector unit . For instance , the first beam path and / or the second beam path are configured as direct beam paths between the radiation-emitting element and the detector unit . In other words , the optoelectronic component can be free of reflective surfaces and / or mirrors .

[0039] The measurement unit can be mounted on the substrate and on a side of the detector unit facing away from the substrate via spacers . In other words , the measurement unit is attached to the substrate via the spacers and, at the same time , is arranged between the radiation-emitting element and the detector unit . In particular, the measurement unit is arranged in a distance to the detector unit such that cross talk between the measurement signal and the reference signal is reduced or prevented . For example , the measurement unit is mounted on the substrate such that a direct mechanical contact between the measurement unit and the detector unit is reali zed . Alternatively, the measurement unit can be mounted on the detector unit , in particular with a direct mechanical contact between measurement region and / or reference region and the respective photodetector regions . By mounting the radiationemitting element on the housing, a simple configuration of the optoelectronic device without structures , reflective surfaces , or mirrors can advantageously be reali zed .

[0040] According to at least one embodiment , the radiation-emitting element and the measurement unit are mounted on the detector unit . In particular, the measurement unit is mounted on a part of the detector unit comprising the photodetector regions and the radiation-emitting element is mounted on a part of the detector unit that is free of the photodetector regions , for example , on the integrated circuit . The first photodetector region and the second photodetector region can be arranged adj acent to one another . Alternatively, the first photodetector region and the second photodetector region can be spaced apart , for example , on di f ferent sides of the radiation-emitting element . For example , the radiationemitting element is electrically contacted through the substrate and the detector unit , in particular through the substrate and the integrated circuit of the detector unit . By mounting the radiation-emitting element and the measurement unit on the detector unit , electrical contacts can advantageously be established easily through the substrate and the detector unit . Thus , the optoelectronic device can advantageously be provided simply and cost-ef f iciently .

[0041] According to at least one embodiment , the radiation-emitting element comprises or is a micro-LED . It is also possible that the radiation-emitting element comprises or is a mini-LED . As a broad definition, a micro-LED could be seen as any lightemitting diode ( LED) with a particularly small si ze . MicroLEDs may comprise a width, a length, a thickness and / or a diameter smaller than or equal to 100 micrometers , in particular, smaller than or equal to 70 micrometers , for example smaller than or equal to 50 micrometers . In particular, micro-LEDs , for example rectangular micro-LEDs , have an edge length, in particular in plan view of the layers of the semiconductor layer sequence , of a luminous surface smaller than or equal to 70 micrometers , for example smaller than or equal to 50 micrometers . For example , a micro-LED is a light-emitting diode with a growth substrate removed, such that a thickness of the micro-LED is in the range between and including, for example , 1 . 5 micrometers and 10 micrometers . For example , the micro-LED is provided on a wafer having releasable retaining structures . The micro-LED can be detached from the wafer in a non-destructive manner .

[0042] In particular, micro-LEDs are used in optoelectronic devices to provide electromagnetic radiation depending on the speci fic application . The micro-LEDs can form pixels or subpixels and can emit electromagnetic radiation of a defined color or wavelength or wavelength range . Small pixel si ze and a high density with close distances make micro-LEDs suitable , among others , for optoelectronic devices such as gas sensors for consumer applications , industrial applications , and automotive applications , for instance in fuel cells .

[0043] Advantageous embodiments and developments of the optoelectronic device for detecting a gas will become apparent from the exemplary embodiments described below in conj unction with the figures . In the figures :

[0044] Figures 1 , 3A, 4 , 5A and 6 each show a schematic sectional side view of an optoelectronic device for detecting a gas according to di f ferent exemplary embodiments ,

[0045] Figures 3B and 5B each show a schematic top view of an optoelectronic device according to di f ferent exemplary embodiments ,

[0046] Figure 2A shows a schematic top view of a measurement unit according to an exemplary embodiment ,

[0047] Figures 2B to 2G each show a schematic sectional side view of a measurement unit according to di f ferent exemplary embodiments .

[0048] In the exemplary embodiments and figures , similar or similarly acting constituent parts are provided with the same reference signs . The elements illustrated in the figures and their si ze relationships among one another should not be regarded as true to scale . Rather, individual elements may be represented with an exaggerated si ze for the sake of better representability and / or for the sake of better understanding .

[0049] Figure 1 shows a schematic sectional side view of an optoelectronic device 1 for detecting a gas described herein according to a first exemplary embodiment . For example , the optoelectronic device 1 is configured for detecting hydrogen (H2) or ammonia (NH3) or a harmful gas such as SOXor NOX.

[0050] The optoelectronic device 1 is surface mountable . The optoelectronic device 1 comprises a substrate 2 , in particular a SMT-substrate , and a housing 3 , in particular an inj ection molded housing . Electrical connection pads 21 of the optoelectronic device 1 are arranged exclusively on a side of the substrate 2 facing away from the housing 3 . The housing 3 comprises a gas inlet 31 covered with a covering 32 , for example , a porous plastic plate or a meander perforated plate . The housing 3 as well as the covering 32 can be impermeable for electromagnetic radiation, in particular at least for an electromagnetic radiation emitted by a radiation-emitting element 4 of the optoelectronic device 1 . The inside surfaces 33 of the housing 3 can be reflective , in particular di f fusely reflective , or non- ref lective .

[0051] The substrate 2 and the housing 3 surround a volume 7 . Within the volume 7 , a radiation-emitting element 4 , a measurement unit 5 and a detector unit 6 are arranged . The radiationemitting element 4 is mounted on an inside surface 33 of the housing 3 and is electrically contacted through the substrate 2 by an electrical connection 41 such as a wire bond or a flexible printed circuit board . The radiation-emitting element 4 is configured for emitting an electromagnetic radiation, in particular, an electromagnetic radiation in the ultraviolet wavelength range , the visible wavelength range , and / or the infrared wavelength range , for example , in the infrared wavelength range . The electromagnetic radiation is emitted by the radiation exit surface 42 . The detector unit 6 is mounted on and electrically contacted through the substrate 2 . The detector unit 6 can comprise an integrated circuit 63 . On a side of the detector unit 6 , in particular of the integrated circuit 63 , facing away from the substrate 2 , a first photodetector region 61 and a second photodetector region 62 are arranged adj acent to one another . For example , the first photodetector region 61 comprises or consists of a first photodiode and the second photodetector region 62 comprises or consists of a second photodiode . Alternatively, the first photodetector region 61 can be a first part of a two-part photodiode and the second photodetector region 62 can be a second part of the two-part photodiode . The radiation exit surface 42 and the photodetector regions 61 , 62 are arranged vis-a-vis .

[0052] A measurement unit 5 is arranged between the radiationemitting element 4 and the detector unit 6 . The measurement unit 5 is hori zontally divided into a measurement region 51 and a reference region 52 . The measurement region 51 is arranged in a first beam path of the electromagnetic radiation between the radiation-emitting element 4 and the first photodetector region 61 and the reference region 52 is arranged in a second beam path of the electromagnetic radiation between the radiation-emitting element 4 and the second photodetector region 62 . In other words , in the exemplary embodiment of figure 1 , the measurement region 51 is arranged above the first photodetector region 61 and the reference region 52 is arranged above the second photodetector region 62 in a direction perpendicular to a main extension plane of the measurement unit 5 and the detector unit 6 . Thus , the measurement of a measurement signal via the first beam path and the measurement of a reference signal via the second beam path is performed in transmission as the electromagnetic radiation of the radiation-emitting element 4 is transmitted through the measurement region 51 and the reference region 52 before it reaches the first photodetector region 61 or the second photodetector region 62 , respectively . In the exemplary embodiment of figure 1 , the measurement unit 5 is mounted on the substrate via spacers 34 . Alternatively, the measurement unit 5 can be mounted on the detector unit 6 (not shown) . The measurement unit 5 comprises a transparent plate 53 and a detector stack 54 arranged on one side of the transparent plate 53 . The transparent plate 53 is arranged on a side of the measurement unit 5 facing the detector unit 6 . Thus , the detector stack 54 is arranged in such a way that it is facing towards a gas containing first part 71 of the volume 7 .

[0053] During operation of the optoelectronic device 1 , the gas enters the volume 7 , in particular the first part 71 of the volume 7 , through the gas inlet 31 and comes into contact with the measurement unit 5 . The gas interacts with the measurement stack 54 in the measurement region 51 of the measurement unit 5 . For example , the gas can bind to and / or chemically react with a material of the measurement stack 54 in the measurement region 51 . As a result , a property of the electromagnetic radiation of the first beam path that is transmitted through the measurement region 51 is changed . Thus , a measurement signal detected at the first photodetector region 61 is changed by the presence of the gas in the volume 7 . In the reference region 52 , the gas does not interact with the measurement stack 54 . Thus , a reference signal detected at the second photodetector region 62 remains unchanged by the presence of the gas in the volume 7 . By comparing the measurement signal to the reference signal , a measurement result can be determined indicating the presence of the gas as well as a concentration of the gas due to the detected di f ference between the measurement signal and the reference signal . Figure 2A shows a schematic top view of a measurement unit 5 according to an exemplary embodiment . The measurement unit comprises a measurement region 51 and a reference region 52 . The measurement region 51 and the reference region 52 are arranged adj acent to one another . In the exemplary embodiment of figure 2 , the measurement region 51 and the reference region 52 share the same transparent plate 53 .

[0054] Figure 2B shows a schematic sectional side view of a measurement unit 2 of figure 2A according to an exemplary embodiment . In the dashed circle denoted A ( in the following referred to as detail A) , figure 2B shows that a part of the transparent plate 53 laterally surrounding the measurement stack 54 is free of the measurement stack 54 .

[0055] Figures 2C to 2G each show a schematic sectional side view of detail A as illustrated in figure 2B according to di f ferent exemplary embodiments . Figures 2C, 2E , and 2G show measurement regions 51 , whereas figures 2D and 2 F show reference regions 52 of the measurement unit 5 .

[0056] The measurement region 51 of figure 2C comprises a transparent plate 53 , a measurement stack 54 , and a protective layer 55 . The transparent plate 53 can be a glass plate . The measurement stack 54 is arranged between the transparent plate 53 and the protective layer 55 . In the exemplary embodiment of figure 2C, the measurement stack 54 comprises a first measurement layer 541 and a second measurement layer 542 arranged between the first measurement layer 541 and the protective layer 55 . The first measurement layer 541 and the second measurement layer 542 comprise or consist of a metal or metal alloy . For example , the first measurement layer 541 comprises or consists of a tantalum palladium alloy such as Tao. gPdo. i and the second measurement layer 542 comprises or consists of a palladium gold copper alloy such as Pdo. eAuo.35Cuo. o5 • For instance , such a measurement stack 54 is configured for detecting hydrogen gas . The protective layer 55 is arranged on the measurement stack 54 in such a way that it has a direct contact to the transparent plate 53 in a region of the transparent plate 53 that is free of the measurement stack 54 . Thus , the protective layer 55 and the transparent plate 53 surround the measurement stack 54 from all sides . The protective layer 55 is permeable for the gas such that the gas can penetrate the protective layer 55 and can come into contact with the measurement stack 54 in the measurement region 51 . For example , the protective layer 55 comprises or consists of polytetrafluoroethylene ( PTFE ) .

[0057] In contrast to the measurement region 51 shown in figure 2C, the reference region 52 in figure 2D further comprises a gas- impermeable layer 56 arranged between the measurement stack 54 and the protective layer 55 . The gas-impermeable layer 56 is arranged on the measurement stack 54 in such a way that it has a direct contact to the transparent plate 53 in the region of the transparent plate 53 that is free of the measurement stack 54 . Thus the gas-impermeable layer 56 and the transparent plate 53 surround the measurement stack 54 from all sides and thus prevent that the gas can reach the measurement stack 54 in the reference region 52 . For example , the gas-impermeable layer 56 comprises or consists of silicon dioxide ( SiO2) .

[0058] In contrast to the measurement region 51 shown in figure 2C, the measurement region 51 in figure 2E further comprises a cover layer 57 arranged on a side of the protective layer 55 facing away from the transparent plate 53 . The cover layer 57 can completely cover the protective layer 56 on a side of the protective layer 55facing away from the measurement stack 54 . The cover layer 57 is permeable for the gas and transparent for electromagnetic radiation emitted by the radiationemitting element 4 , but is not transparent for electromagnetic radiation having a di f ferent wavelength or wavelength range . The cover layer 57 can be used as an alternative for a housing 3 . For example , the cover layer 57 is a black thin plastic layer or a layer comprising or consisting of porous silicon .

[0059] In contrast to the reference region 52 shown in figure 2D, the reference region 52 in figure 2 F further comprises a cover layer 57 arranged on a side of the protective layer facing away from the transparent plate 53 . The cover layer 57 is identical to the cover layer described in conj unction with figure 2E .

[0060] In contrast to the measurement region 51 shown in figure 2E , the measurement region 51 of figure 2G comprises a transparent plate 53 having a side facing away from the measurement stack 54 that is grinded . Further, the side surfaces of the transparent plate 53 perpendicular to a main extension plane of the transparent plate 53 are diced and covered with both the protective layer 55 and the cover layer 57 . Having the cover layer 57 on the side surfaces of the transparent plate 53 improves the ef fect of the cover layer 57 as a transmission of electromagnetic radiation through the side surfaces of the transparent plate 53 is reduced or prevented . Figure 3A shows a schematic sectional side view and figure 3B shows a schematic top view of an optoelectronic device 1 for detecting a gas described herein according to an exemplary embodiment . The exemplary embodiment shown in figures 3A and 3B corresponds essentially to the exemplary embodiment shown in figure 1 . In contrast to the exemplary embodiment shown in figure 1 , the radiation-emitting element 4 , the measurement unit 5 , and the detector unit 6 of the optoelectronic device 1 shown in figures of 3A and 3B are mounted on the substrate 2 . The measurement unit 5 is arranged in such a way that a main extension plane of the measurement region 51 and the reference region 52 are perpendicular to a main extension plane of the substrate 2 . The measurement unit can be mounted on the substrate with the help of spacers 34 and adhesive 35 .

[0061] The measurement unit 5 is arranged such that the transparent plate 53 faces a second part 72 and the detector stack 54 faces a first part 71 of the volume 7 . In other words , the detector stack 54 faces the part of the volume 7 comprising the gas inlet 31 . In the exemplary embodiment of figures 3A and 3B, the gas inlet is arranged between the measurement unit 5 and the detector unit 6 . Alternatively, the gas inlet can be arranged between the radiation-emitting element 4 and the measurement unit 5 . In this case , the measurement unit 5 is to be arranged rotated by 180 ° about an axis perpendicular to the main extension plane of the substrate 2 .

[0062] The inside surfaces 33 of the housing 3 are di f fusely reflective . A structure 8 is arranged within the volume 7 in such a way that it separates the first beam path and the second beam path between the measurement unit 5 and the detector unit 6 . Figure 4 shows a schematic sectional side view of an optoelectronic device 1 for detecting a gas described herein according to an exemplary embodiment . The exemplary embodiment shown in figure 4 corresponds essentially to the exemplary embodiment shown in figures 3A and 3B . In contrast to the exemplary embodiment of figures 3A and 3B, the optoelectronic device 1 of figure 4 comprises mirrors 9 arranged on the inside surfaces 33 of the housing 3 . A mirror 9 is arranged on an inside surfaces 33 between the radiationemitting element 4 and the measurement unit 5 . A further mirror 9 is arranged on an inside surface 33 between the measurement unit 5 and the detector unit 6 . The mirrors 9 are specularly reflective . For example , the mirrors 9 are plane mirrors . The mirrors 9 direct the electromagnetic radiation emitted by the radiation-emitting element 4 along the first beam path and the second beam path, respectively . The inside surfaces 33 of the housing 3 are not di f fusely reflective in this exemplary embodiment . Further, the optoelectronic device 1 is free of structures 8 for separating the beam paths in this exemplary embodiment .

[0063] Figure 5A shows a schematic sectional side view and figure 5B shows a schematic top view of an optoelectronic device 1 for detecting a gas described herein according to an exemplary embodiment . The exemplary embodiment shown in figures 5A and 5B corresponds essentially to the exemplary embodiment shown in figure 1 . In contrast to the exemplary embodiment of figure 1 , the radiation-emitting element 4 and the measurement unit 5 of the optoelectronic device 1 shown in figures 5A and 5B are mounted on the detector unit 6 . Further, the inside surfaces 33 of the housing 3 are di f fusely reflective . Alternatively, mirrors 9 can be arranged on the inside surfaces of the housing for directing the beam paths (not shown) .

[0064] In particular, the radiation-emitting element 4 is mounted on a region of the integrated circuit 63 that is free of the photodetector regions 61 , 62 , wherein the measurement unit 5 is mounted on the photodetector regions 61 , 62 that are arranged on a side of the integrated circuit 63 facing away from the substrate 2 . As the measurement unit 5 is mounted in direct contact to the photodetector regions 61 , 62 , the optoelectronic device 1 is free of structures 8 for separating the beam paths in this embodiment .

[0065] Figure 6 shows a schematic sectional side view of an optoelectronic device 1 for detecting a gas described herein according to an exemplary embodiment . The exemplary embodiment shown in figure 6 corresponds essentially to the exemplary embodiment shown in figures 5A and 5B . In contrast to the exemplary embodiment shown in figures 5A and 5B, the measurement unit 5 is a two-part measurement unit 5 . The two parts of the measurement unit 5 are separated by the radiation-emitting element 4 on the detector unit 6 . One part of the measurement unit 5 comprises the measurement region 51 arranged on the first photodetector region 61 and the other part of the measurement unit 5 comprises the reference region 52 arranged on the second photodetector region 62 . Thus , the photodetector regions 61 , 62 of the detector unit 6 are also separated by the radiation-emitting element 4 on the detector unit 6 .

[0066] The features and exemplary embodiments described in connection with the figures can be combined with each other according to further exemplary embodiments , even i f not all combinations are explicitly described . Furthermore , the exemplary embodiments described in connection with the figures may have alternative or additional features as described in the general part .

[0067] This patent application claims the priority of German patent application 10 2023 129 360 . 5 , the disclosure content of which is hereby incorporated by reference . The invention is not restricted to the exemplary embodiments by the description on the basis of said exemplary embodiments . Rather, the invention encompasses any new feature and also any combination of features , which in particular comprises any combination of features in the patent claims and any combination of features in the exemplary embodiments , even i f this feature or this combination itsel f is not explicitly speci fied in the patent claims or exemplary embodiments .

[0068] References

[0069] 1 optoelectronic device

[0070] 2 substrate

[0071] 21 electrical connection pad

[0072] 3 housing

[0073] 31 gas inlet

[0074] 32 covering

[0075] 33 inside surface

[0076] 34 spacer

[0077] 35 adhesive

[0078] 4 radiation-emitting element

[0079] 41 electrical connection

[0080] 42 radiation exit surface

[0081] 5 measurement unit

[0082] 51 measurement region

[0083] 52 reference region

[0084] 53 transparent plate

[0085] 54 measurement stack

[0086] 541 first measurement layer

[0087] 542 second measurement layer

[0088] 55 protective layer

[0089] 56 gas-impermeable layer

[0090] 57 cover layer

[0091] 6 detector unit

[0092] 61 first photodiode

[0093] 62 second photodiode

[0094] 63 integrated circuit

[0095] 7 volume

[0096] 71 first part

[0097] 72 second part

[0098] 8 structure

[0099] 9 mirror

Claims

Claims1. An optoelectronic device (1) for detecting a gas comprising- a radiation-emitting element (4) configured for emitting an electromagnetic radiation,- a measurement unit (5) comprising a measurement region (51) and a reference region (52) , and- a detector unit (6) comprising at least a first photodetector region (61) and a second photodetector region (62) , wherein the measurement region (51) is arranged in a first beam path of the electromagnetic radiation between the radiation-emitting element (4) and the first photodetector region ( 61 ) , wherein the reference region (52) is arranged in a second beam path of the electromagnetic radiation between the radiation-emitting element (4) and the second photodetector region ( 62 ) , wherein the optoelectronic device (1) is surface mountable, and wherein the measurement region (51) is configured for interacting with the gas.

2. The optoelectronic device (1) according to the preceding claim, further comprising a substrate (2) , wherein electrical connection pads (21) of the optoelectronic device (1) are exclusively arranged on a side of the substrate (2) facing away from the radiation-emitting element (4) , the measurement unit (5) , and the detector unit (6) .

3. The optoelectronic device (1) according to at least one of the preceding claims, wherein the gas is hydrogen.

4. The optoelectronic device (1) according to at least one of the preceding claims, further comprising a housing (3) , wherein the substrate (2) and the housing (3) surround a volume ( 7 ) , wherein the radiation-emitting element (4) , the measurement unit (5) , and detector unit (6) are arranged in the volume (7) .

5. The optoelectronic device (1) according to at least one of the preceding claims, wherein the housing (3) comprises a gas inlet (31) , wherein the gas inlet (31) is covered with a covering (32) impermeable to the electromagnetic radiation emitted by the radiation-emitting element (4) .

6. The optoelectronic device (1) according to at least one of the preceding claims, wherein the detector unit (6) further comprises an integrated circuit ( 63 ) .

7. The optoelectronic device (1) according to at least one of the preceding claims, wherein the measurement region (51) and / or the reference region (52) comprises a transparent plate (53) , a measurement stack (54) , and a protective layer (55) , wherein the measurement stack (54) is arranged between the transparent plate (53) and the protective layer (55) .

8. The optoelectronic device (1) according to the preceding claim, wherein the reference region (52) further comprises a gas- impermeable layer (56) , wherein the gas-impermeable layer (56) is arranged between the measurement stack (54) and the protective layer (55) .

9. The optoelectronic device (1) according to at least one of the claims 7 or 8, wherein the measurement region (51) and / or the reference region (52) further comprises a cover layer (57) , wherein the cover layer (57) is arranged on a side of the protective layer (55) facing away from the measurement stack (54) .

10. The optoelectronic device (1) according to at least one of the claims 7 to 9, wherein the transparent plate (53) is arranged on a side of the measurement region (51) and / or the reference region (52) facing away from a first part (71) of the volume (7) , wherein the first part (71) of the volume (7) is configured to contain the gas .

11. The optoelectronic device (1) according to at least one of the preceding claims, wherein the measurement region (51) and the reference region (52) are arranged directly adjacent to one another.

12. The optoelectronic device (1) according to at least one of the claims 1 to 10, wherein the measurement region (51) and the reference region (52) are arranged on different sides of the radiationemitting element (4) .

13. The optoelectronic device (1) according to at least one of the preceding claims, wherein at least one inside surface (33) of the housing (3) is diffusely reflective.

14. The optoelectronic device (1) according to at least one of the preceding claims, further comprising at least one structure (8) for separating the first beam path and the second beam path at least partially .

15. The optoelectronic device (1) according to at least one of the preceding claims, further comprising at least one mirror (9) for directing the electromagnetic radiation emitted by the radiation-emitting element (4) along the first beam path and the second beam path .

16. The optoelectronic device (1) according to at least one of the preceding claims, wherein the detector unit (6) is mounted on the substrate (2) .

17. The optoelectronic device (1) according to at least one of the preceding claims, wherein the radiation-emitting element (4) and the measurement unit (5) are mounted on the substrate (2) .

18. The optoelectronic device (1) according to at least one of the claims 1 to 16, wherein a radiation exit surface (42) of the radiationemitting element (4) faces the substrate (2) ,wherein the measurement unit (5) is mounted on the substrate (2) or the detector unit (6) .

19. The optoelectronic device (1) according to at least one of the claims 1 to 16, wherein the radiation-emitting element (4) and the measurement unit (5) are mounted on the detector unit (6) .

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