Ray source assembly, ray control method, and computer-readable storage medium

Abstract

A ray source assembly, a ray control method, and a computer-readable storage medium. The ray source assembly comprises: an anode end (401), configured to receive an electron beam and generate rays on the basis of the received electron beam; a cathode end (402), configured to emit the electron beam to the anode end (401); and an electron beam control portion (403), disposed between the cathode end (402) and the anode end (401) and configured to adjust, by means of a control voltage, the number of electrons reaching the anode end (401) in the electron beam. The method can improve current control efficiency.

Description

Radiation source assembly, radiation control method, and computer-readable storage medium

[0001] This application claims priority to Chinese patent application number 202311456512.4 filed on November 2, 2023, entitled “Radiation Source Assembly, Radiation Control Method, and Computer-Readable Storage Medium,” the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present application relates to the field of medical technology, and in particular to a radiation source assembly, a radiation control method, and a computer-readable storage medium. Background Art

[0003] Medical scanning devices, including computed tomography (CT) devices, require dose modulation (DOM) during the scanning process. That is, the scanning dose of the medical scanning device is adjusted according to demand during the scanning process.

[0004] Taking CT equipment as an example, since the scanning dose is positively correlated with the tube current, the filament current of the CT tube is currently adjusted to change the temperature of the filament current, thereby adjusting the number of electrons released by the filament to control the tube current of the CT equipment.

[0005] However, the above-mentioned method of controlling the tube current is limited by the temperature change rate of the filament material, and the current control efficiency is not high. Therefore, how to improve the current control efficiency is a key research topic for those skilled in the art.

[0006] Summary of the Invention

[0007] In one aspect, the present application provides a radiation source assembly, comprising:

[0008] an anode terminal, for receiving the electron beam and generating rays according to the received electron beam;

[0009] a cathode terminal, configured to emit an electron beam toward the anode terminal; and

[0010] An electron beam control unit is provided between the cathode terminal and the anode terminal, and is used for adjusting the number of electrons in the electron beam that reach the anode terminal by controlling a voltage.

[0011] In some embodiments, the electron beam control portion includes at least two voltage control terminals, and the at least two voltage control terminals form a potential difference with the cathode terminal, and the direction of the potential difference is consistent with the movement direction of the electron beam.

[0012] In some embodiments, the electron beam control section is configured such that a magnitude of a tube current formed by the electron beam is negatively correlated with a potential difference between the cathode terminal and the electron beam control section.

[0013] In some embodiments, the control voltage is a negative voltage and is smaller than the voltage of the cathode terminal, and the electron beam control section is configured such that the magnitude of the tube current formed by the electron beam is negatively correlated with the absolute value of the control voltage.

[0014] In some embodiments, the electron beam control section is further configured to control a cross-sectional area of ​​the electron beam and / or a position where the electron beam reaches the anode terminal through the control voltage.

[0015] In some embodiments, the electron beam control unit includes a first voltage control terminal and a second voltage control terminal respectively located on both sides of a moving direction of the electron beam.

[0016] In some embodiments, the first voltage control terminal and the second voltage control terminal are configured to control the number of electrons passing through the first voltage control terminal and the second voltage control terminal in the moving direction of the electron beam based on the corresponding control voltage.

[0017] In some embodiments, the first voltage control terminal and the second voltage control terminal are configured to control the deflection of the electron beam based on the corresponding control voltage.

[0018] In some embodiments, the radiation source assembly further comprises:

[0019] The additional electron beam control unit is used to control the cross-sectional area of ​​the electron beam and / or the position where the electron beam reaches the anode terminal by adding a control voltage.

[0020] In some embodiments, the additional control voltage is a negative voltage and is smaller than the voltage of the cathode terminal, and the additional electron beam control section is configured such that the cross-sectional area of ​​the electron beam is negatively correlated with the absolute value of the additional control voltage.

[0021] In some embodiments, the additional electron beam control section includes a first additional voltage control terminal and a second additional voltage control terminal, the first additional voltage control terminal provides a first additional control voltage, and the second additional voltage control terminal provides a second additional control voltage. The additional electron beam control section is configured to control the deflection of the electron beam based on the first additional control voltage and the second additional control voltage.

[0022] In some embodiments, in the electron beam moving direction, the electron beam control section is located upstream of the additional electron beam control section.

[0023] In some embodiments, the radiation source assembly further comprises:

[0024] The magnetron structure is used to control at least one of the cross-sectional area of ​​the electron beam, the position where the electron beam reaches the anode terminal, and the number of electrons in the electron beam.

[0025] Another aspect of the present application provides a ray control method, which is applied to the ray source assembly according to any one of the above embodiments, comprising:

[0026] determining a target tube current of the radiation source according to a preset radiation dose;

[0027] The control voltage is determined according to the target tube current.

[0028] On the other hand, the present application provides a computer-readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the above-mentioned ray control method is implemented.

[0029] The details of various embodiments of the present invention will be described in the following drawings and descriptions. Based on the description, drawings and claims, those skilled in the art will easily understand other features, problems solved and technical effects of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following briefly introduces the drawings required for use in the embodiments or related technical descriptions. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0031] FIG1 is a schematic diagram of dosage modulation;

[0032] FIG2 is a schematic diagram of an elliptical model of a scanning object in the Z direction;

[0033] Figure 3 is a schematic diagram of tube current adjustment and limitation;

[0034] FIG4 is a schematic structural diagram of a radiation source assembly according to an embodiment of the present application;

[0035] FIG5 is a schematic structural diagram of another radiation source assembly according to an embodiment of the present application;

[0036] FIG6 is a schematic structural diagram of another radiation source assembly according to an embodiment of the present application;

[0037] FIG7 is a schematic structural diagram of another radiation source assembly according to an embodiment of the present application;

[0038] FIG8 is a schematic structural diagram of another radiation source assembly according to an embodiment of the present application;

[0039] FIG9 is a schematic diagram of dosage modulation in an embodiment of the present application;

[0040] FIG10 is a diagram illustrating an application environment of the ray control method according to an embodiment of the present application;

[0041] FIG11 is a schematic flow chart of a ray control method according to an embodiment of the present application;

[0042] FIG12 is a structural block diagram of a ray control and adjustment device according to an embodiment of the present application;

[0043] FIG13 is a diagram showing the internal structure of a computer device in an embodiment of the present application. DETAILED DESCRIPTION

[0044] In order to make the purpose, technical solutions and advantages of this application more clear, the following further describes this application in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.

[0045] Dose modulation plays an important role in reducing scan dose and improving the signal-to-noise ratio (SNR) of images. It can be applied to imaging devices such as CT (computed tomography), XR (radiographs), and DR (digital radiography), as well as other radiotherapy equipment. Taking the application of dose modulation in CT equipment as an example, dose modulation in CT equipment primarily involves Z-direction dose modulation and X-direction dose modulation. The Z direction is the axial direction of the scanning bed in the CT equipment, and the X direction is the direction of the optical plane.

[0046] Taking the Z direction as an example, the scanned object on the scanning bed can be approximated as an elliptical model. Ellipses of varying axis lengths can be determined for this elliptical model in the Z direction. At locations with greater attenuation, the ellipse axis lengths are also larger, and the required scan dose increases. Since the scan dose is positively correlated with the tube current, increasing the tube current is also necessary at locations with greater attenuation.

[0047] Figure 1 is a schematic diagram of dose modulation, and Figure 2 is a schematic diagram of an elliptical model of a scanned object in the Z direction. As shown in Figure 1, P1 to P4 represent different attenuation positions in the Z direction, and the required tube current at different attenuation positions also varies. Figure 2 shows ellipses with different axis lengths formed in the Z direction by P2 and P1, respectively. In conjunction with Figure 1, it can be seen that, for example, in the same direction in the XY plane, if the axis length of the ellipse corresponding to P2 is greater than that of the ellipse corresponding to P1, the required tube current at P2 is greater than that at P1.

[0048] Currently, dose modulation is achieved by adjusting the filament current of the CT tube in the device. However, this method is limited by the rate of change of the filament material and temperature, as well as the electron emission capability. Therefore, it is difficult to quickly change the tube current of the CT device between different sizes.

[0049] Figure 3 is a schematic diagram of tube current adjustment limitations. As shown in Figure 3, the dashed line represents the ideal tube current curve during dose modulation, while the solid line represents the actual tube current curve during modulation. As can be seen, due to limitations such as the filament material, during dose modulation, the upper limit of the actual tube current can be lower than the upper limit of the theoretical tube current, while the lower limit of the actual tube current can be higher than the lower limit of the theoretical tube current. This indicates that the actual filament current adjustment during modulation can differ significantly from the theoretical modulation curve. Consequently, the tube current control efficiency is limited, resulting in low dose modulation efficiency.

[0050] Based on this, it is necessary to provide a ray source assembly that can improve the current control efficiency in order to address the above technical problems. The ray source assembly will be introduced below.

[0051] FIG4 is a schematic structural diagram of a ray source assembly in an embodiment of the present application. In an exemplary embodiment, as shown in FIG4 , the ray source assembly 400 includes an anode terminal 401 , a cathode terminal 402 and an electron beam control unit 403 .

[0052] Cathode terminal 402 is used to emit an electron beam toward anode terminal 401. For example, cathode terminal 402 can be connected to a negative high voltage, and anode terminal 401 can be grounded or connected to a positive voltage. Alternatively, cathode terminal 402 can be the cathode terminal where the filament current in a CT device resides, and the anode terminal is the target area.

[0053] The anode terminal 401 is used to receive the electron beam and generate radiation according to the received electron beam.

[0054] During use of the radiation source assembly 400, a high voltage electric field is applied to the cathode terminal 402 and the anode terminal 401, causing the cathode terminal 402 to emit an electron beam toward the anode terminal 401, thereby causing the anode terminal 401 to generate radiation based on the received electron beam. It is understood that the greater the number of electrons in the electron beam reaching the anode terminal 401, the greater the tube current.

[0055] Therefore, to enable dose modulation, in this embodiment, an electron beam control unit 403 is disposed between the cathode terminal 402 and the anode terminal 401. The electron beam control unit 403 is used to adjust the number of electrons in the electron beam that reach the anode terminal 401 by controlling the voltage. This allows the electron beam control unit 403 to control the tube current. The control voltage refers to the voltage applied to the electron beam control unit 403, and the control voltage corresponding to the electron beam control unit 403 can be adjusted using a high-voltage generator or other means.

[0056] Exemplarily, an anode terminal 401 and a cathode terminal 402 are formed at both ends of the X-ray tube. The electron beam control unit 403 includes a voltage control terminal, such as an electrode structure, for providing a control voltage. The voltage control terminal is disposed inside the X-ray tube, while a driving component for the voltage control terminal, such as a driving circuit, is disposed outside the X-ray tube.

[0057] As a non-limiting example, the electron beam control unit 403 can adjust the control voltage to vary the number of electrons in the electron beam that reach the anode terminal 401 (and therefore the tube current) in various ways. For example, the tube current (corresponding to the number of electrons that reach the anode terminal 401) can be adjusted as desired, such as by varying it in a stepwise or smooth manner, and / or by varying it in a periodic or non-periodic manner (e.g., irregularly).

[0058] As a non-limiting example, the electron beam emitted by cathode terminal 402 is set as a first electron beam having a first number of electrons. Electron beam control unit 403 can adjust the number of electrons in the first electron beam to produce a second electron beam having a second number of electrons. The first number and the second number can be the same or different, depending on the actual application requirements. The second electron beam generates a tube current, and anode terminal 401 can be used to receive the second electron beam and generate radiation based on the second electron beam.

[0059] Optionally, the control voltage corresponding to the electron beam control unit 403 can be less than or equal to the voltage corresponding to the cathode terminal 402. For example, the control voltage corresponding to the electron beam control unit 403 can be a more negative voltage than the voltage corresponding to the cathode terminal 402. In this way, a potential difference is formed between the cathode terminal 402 and the electron beam control unit 403 to block the electron beam emitted by the cathode terminal 402 from moving toward the anode terminal 401, thereby reducing the number of electrons reaching the anode terminal 401. By adjusting the magnitude of the control voltage, the number of electrons blocked in the electron beam can be adjusted.

[0060] Optionally, the direction of the potential difference formed between the electron beam control unit 403 and the cathode terminal 402 can be parallel to the direction of movement of the electron beam, or it can be at a certain angle to the direction of movement of the electron beam. In some embodiments, the direction of the potential difference can also include both a direction parallel to the direction of movement of the electron beam and a direction at a certain angle to the direction of movement of the electron beam. For example, the direction of the potential difference is adjusted by changing the position of the voltage control end of the electron beam control unit 403 relative to the cathode terminal 402. It is understandable that the direction of movement of the electron beam is also the direction from the cathode terminal 402 to the anode terminal 401 (for example, the direction of the dotted arrow shown in Figures 7 and 8).

[0061] In the above-mentioned ray source assembly 400, the cathode end 402 is used to emit an electron beam to the anode end 401, and the anode end 401 is used to receive the electron beam and generate rays based on the received electron beam. Since the electron beam control unit 403 can adjust the number of electrons in the electron beam that reach the anode end 401 by controlling the voltage, the number of electrons in the electron beam that reach the anode end 401 can be adjusted by adjusting the control voltage corresponding to the electron beam control unit 403, thereby adjusting the size of the tube current corresponding to the ray source assembly 400. In this process, the temperature of the filament current does not need to be changed, thereby reducing the influence of the rate of change of the filament material temperature and improving the current control efficiency of the tube current. Furthermore, the ray source assembly 400 can quickly and efficiently perform dose modulation, which can further reduce the scanning dose and improve the signal-to-noise ratio of the image generated by the ray source assembly 400 (for example, at different angles).

[0062] In an exemplary embodiment, optionally, the electron beam control unit 403 includes at least two voltage control terminals, and the at least two voltage control terminals form a potential difference with the cathode terminal 402 , and the direction of the potential difference is consistent with the moving direction of the electron beam.

[0063] The direction of the potential difference is consistent with the direction of movement of the electron beam, which means that the angular difference between the direction of the potential difference and the direction of movement of the electron beam is less than or equal to a preset difference, and the preset difference can be a number close to 0, for example, the preset value can be 1°, 2°, 5°, etc. Exemplarily, the direction of the potential difference can be parallel to the direction of movement of the electron beam.

[0064] It is understandable that since the ray source assembly 400 is typically a three-dimensional structure rather than a planar structure, the electron beam emitted from the cathode terminal 402 is an electron beam that contains electrons in three spatial directions. Therefore, this embodiment uses an electron beam control unit 403 that includes at least two voltage control terminals. The two voltage control terminals are used to form a potential difference with the cathode terminal 402. In this way, the number of electrons in the electron beam that reach the anode terminal 401 can be effectively adjusted spatially using the two potential differences. For example, the two voltage control terminals are respectively provided on either side of the direction of motion of the electron beam.

[0065] The difference between the control voltages corresponding to at least two voltage control terminals is smaller than a preset difference. For example, the control voltages corresponding to at least two voltage control terminals are equal.

[0066] Further optionally, at least two voltage control terminals of the electron beam control unit 403 are symmetrically arranged relative to the moving direction of the electron beam.

[0067] As a non-limiting example, for the voltage control end of the electron beam control part 403, each voltage control end will form an electric potential difference with the cathode end 402. Taking the example that the control voltage of the electron beam control part 403 is less than the voltage corresponding to the cathode end 402, the potential difference between the cathode end 402 and the voltage control end will be directed from the cathode end 402 to the voltage control end.

[0068] Since the direction of the potential difference between the cathode terminal 402 and the voltage control terminal is consistent with the movement direction of the electron beam, the electron beam control unit can adjust the number of electrons in the electron beam reaching the anode terminal 401 to the greatest extent, thereby improving the current control efficiency.

[0069] In an exemplary embodiment, optionally, the magnitude of the tube current formed by the electron beam is negatively correlated with the absolute value of the control voltage.

[0070] For example, if the control voltage corresponding to the electron beam control unit 403 is lower than the voltage corresponding to the cathode terminal 402, a potential difference will be formed between the cathode terminal 402 and the electron beam control unit 403, blocking the electron beam emitted by the cathode terminal 402 from moving toward the anode terminal 401, thereby reducing the number of electrons reaching the anode terminal 401. Therefore, the smaller the control voltage (the larger the absolute value when negative), that is, the greater the pressure difference between the cathode terminal 402 and the electron beam control unit 403, the greater the electron beam blocking ability of the electron beam control unit 403, the fewer electrons reaching the anode terminal 401, and the smaller the tube current generated by the electron beam. Therefore, the tube current generated by the electron beam is negatively correlated with the absolute value of the control voltage.

[0071] In this embodiment, since the magnitude of the tube current formed by the electron beam is negatively correlated with the absolute value of the control voltage, the magnitude of the tube current formed by the electron beam can be flexibly and efficiently controlled by the absolute value of the control voltage. For example, if a larger tube current is required, the absolute value of the control voltage can be reduced.

[0072] In an exemplary embodiment, optionally, the electron beam control unit 403 is further configured to control the cross-sectional area of ​​the electron beam and / or the position at which the electron beam reaches the anode terminal 401 by controlling the voltage.

[0073] The cross-sectional area of ​​the electron beam can affect the size of the final imaging focal spot. For example, taking an electron beam with the same number of electrons and assuming a tube current of 100 mA (milliamperes), if the cross-sectional area of ​​the electron beam is A, the final focal spot size is 0.6 mm by 0.6 mm. If the cross-sectional area of ​​the electron beam is B, the final focal spot size is 1.2 mm by 1.2 mm. Generally, at the same power, the smaller the focal spot size, the better the quality of the image generated by the final X-ray source assembly. In other words, the quality of the image generated by the X-ray source assembly is negatively correlated with the cross-sectional area of ​​the electron beam.

[0074] Optionally, the electron beam control unit 403 can control the cross-sectional area of ​​the electron beam by controlling the voltages at the two voltage control terminals. For example, when the control voltage corresponding to the electron beam control unit 403 is negative, the greater the absolute value of the control voltage, the stronger the repulsion or compression effect on the electron beam, thereby reducing the cross-sectional area of ​​the electron beam. Furthermore, the control voltages at the two voltage control terminals also act as a cutoff. By varying the magnitude of the control voltage, the number of electrons passing through the two voltage control terminals in the direction of electron beam motion can be changed, thereby varying the magnitude of the tube current.

[0075] Alternatively or additionally, under normal circumstances, after the electron beam is emitted from the cathode terminal 402, the position at which it reaches the anode terminal 401 generally does not deflect. However, under the control voltage, the movement direction of the electron beam between the cathode terminal 402 and the anode terminal 401 will deflect. In this way, the control voltage of the electron beam control unit 403 can control the position at which the electron beam reaches the anode terminal 401. The position at which the electron beam reaches the anode terminal 401 can affect the focal position of the final imaging. Therefore, the ray source assembly 400 can also be used in some flying focus or energy spectrum CT scenarios. In some embodiments, the control voltages of the two voltage control terminals are not equal, and the potential difference perpendicular to the direction of movement of the electron beam generated between the two determines the degree of deflection of the electron beam. Therefore, the deflection of the direction of movement of the electron beam can be controlled by controlling the potential difference between the control voltages of the two voltage control terminals, thereby controlling the position of the electrons reaching the anode terminal 401.

[0076] It is understandable that in some embodiments, the cross-sectional area of ​​the electron beam and the position reaching the anode terminal 401 can be controlled simultaneously. For example, the control voltage provided by the voltage control unit not only provides a compression effect on the electron beam, but also controls the deflection of the electron beam.

[0077] In this embodiment, since the electron beam control unit 403 can also be used to control the cross-sectional area of ​​the electron beam and / or the position of the electron beam reaching the anode terminal 401 by controlling the voltage, the electron beam received by the anode terminal 401 can be more flexibly controlled, thereby expanding the application scenarios of the radiation source assembly.

[0078] The above describes a method of integrating the functions of controlling the cross-sectional area of ​​the electron beam and / or the position at which the electron beam reaches the anode terminal 401, and adjusting the number of electrons reaching the anode terminal 401 into the electron beam control unit 403. In some embodiments, the functions of controlling the cross-sectional area of ​​the electron beam and / or the position at which the electron beam reaches the anode terminal 401, and adjusting the number of electrons reaching the anode terminal 401, can also be respectively arranged on two components of the radiation source assembly 400, for example, the embodiments shown in Figures 5 and 6, to achieve precise control.

[0079] FIG5 is a schematic structural diagram of another ray source assembly in an embodiment of the present application. In an exemplary embodiment, as shown in FIG5 , the ray source assembly 400 further includes an additional electron beam control unit 501 .

[0080] The additional electron beam control unit 501 is used to control the cross-sectional area of ​​the electron beam and / or the position at which the electron beam reaches the anode terminal 401 by applying an additional control voltage. Similarly, the additional electron beam control unit 501 is also disposed between the cathode terminal 402 and the anode terminal 401. The additional control voltage refers to the voltage applied to the additional electron beam control unit 501, and the additional control voltage can be adjusted by a high-voltage generator or other means.

[0081] Optionally, the additional control voltage corresponding to the additional electron beam control unit 501 can be smaller than the voltage corresponding to the cathode terminal 402. For example, the additional control voltage corresponding to the additional electron beam control unit 501 can be a negative voltage that is smaller than the voltage corresponding to the cathode terminal 402. In this way, the additional electron beam control unit 501 can adjust the cross-sectional area and / or movement direction of the electron beam, thereby controlling the cross-sectional area of ​​the electron beam and / or the position at which the electron beam reaches the anode terminal 401. The control principle is similar to that of the aforementioned electron beam control unit 403.

[0082] Further optionally, the additional electron beam control unit 501 includes at least two additional voltage control terminals, such as two electrodes. The two additional voltage control terminals can be driven by a driving circuit to generate a voltage. Similarly, the two additional voltage control terminals can be disposed inside the X-ray tube, while the driving components for the voltage control terminals, such as the driving circuit, are disposed outside the X-ray tube. The direction of the potential difference between the two additional voltage control terminals can be perpendicular to the direction of motion of the electron beam, or can form another angle with the direction of motion of the electron beam.

[0083] In this embodiment, since the ray source assembly 400 also includes an additional electron beam control unit 501, the additional electron beam control unit 501 is used to control the cross-sectional area of ​​the electron beam and / or the position at which the electron beam reaches the anode terminal 401, thereby improving the accuracy of controlling the cross-sectional area of ​​the electron beam and the position at which the electron beam reaches the anode terminal 401.

[0084] In an exemplary embodiment, optionally, the cross-sectional area of ​​the electron beam is negatively correlated with the absolute value of the additional control voltage.

[0085] In this embodiment, taking the example of an additional control voltage corresponding to the additional electron beam control unit 501 being lower than the voltage corresponding to the cathode terminal 402, the additional control voltage of the additional electron beam control unit 501 will repel or compress the electron beam. Therefore, the smaller the additional control voltage (the larger the absolute value when negative), the greater the compression capability of the additional electron beam control unit 501 on the electron beam, and the smaller the cross-sectional area of ​​the electron beam. Therefore, the cross-sectional area of ​​the electron beam is negatively correlated with the absolute value of the additional control voltage.

[0086] In this embodiment, since the cross-sectional area of ​​the electron beam is negatively correlated with the absolute value of the additional control voltage, the absolute value of the additional control voltage can be used to flexibly and efficiently control the cross-sectional area of ​​the electron beam. For example, if a larger cross-sectional area is required, the absolute value of the additional control voltage can be reduced.

[0087] In an exemplary embodiment, optionally, the additional electron beam control unit 501 includes a first additional voltage control terminal and a second additional voltage control terminal, the first additional voltage control terminal corresponds to the first additional control voltage, and the second additional voltage control terminal corresponds to the second additional control voltage.

[0088] If the absolute value of the first additional control voltage is greater than the absolute value of the second additional control voltage, then in the direction of the line connecting the two additional voltage control terminals, the position where the electron beam arrives at the anode terminal 401 is close to the second additional voltage control terminal; if the absolute value of the first additional control voltage is less than the absolute value of the second additional control voltage, then the position where the electron beam arrives at the anode terminal 401 is close to the first additional voltage control terminal.

[0089] That is to say, the additional control voltage includes a first additional control voltage and a second additional control voltage. The voltage difference between the first additional control voltage and the second additional control affects the deflection direction of the electron beam. The greater the pressure difference, the greater the deflection of the electron beam. When the pressure difference is zero, the electron beam does not deflect. Taking the case where both the first additional control voltage and the second additional control voltage are less than the voltage corresponding to the cathode terminal 402 as an example, if the first additional control voltage is less than the second additional control voltage (that is, when the pressure is negative, the absolute value of the first additional control voltage is greater than the absolute value of the second additional control voltage), the effect of the first additional control voltage on the electron beam is greater. Therefore, the electron beam will approach the second additional voltage control terminal during movement. Therefore, the position where the electron beam arrives at the anode terminal 401 is close to the second additional voltage control terminal. Similarly, when the absolute value of the first additional control voltage is less than the absolute value of the second additional control voltage, the position where the electron beam arrives at the anode terminal 401 is closer to the first additional voltage control terminal.

[0090] In this embodiment, when the absolute value of the first additional control voltage is greater than the absolute value of the second additional control voltage, the position where the electron beam arrives at the anode terminal 401 is close to the second additional voltage control terminal; when the absolute value of the first additional control voltage is less than the absolute value of the second additional control voltage, the position where the electron beam arrives at the anode terminal 401 is close to the first additional voltage control terminal. Therefore, the position where the electron beam arrives at the anode terminal 401 can be flexibly controlled by the additional electron beam control unit 501.

[0091] Therefore, in a specific application of the ray source assembly according to this embodiment, for example, the electron beam from the cathode end 402 can be first quickly adjusted through the electron beam control unit 403 to change the number of electrons and the cross-sectional area of ​​the electron beam, and then the position where the electron beam arrives at the anode end 401 can be changed through the additional electron beam control unit 501, and the position where the electron beam arrives at the anode end 401 and the area of ​​the spot formed can be further adjusted without changing the size of the tube current, thereby achieving precise adjustment of one or more of the cross-sectional area of ​​the electron beam, the position where the electron beam arrives at the anode end 401, and the number of electrons in the electron beam through two-stage adjustment.

[0092] FIG6 is a schematic structural diagram of another ray source assembly in an embodiment of the present application. In an exemplary embodiment, as shown in FIG6 , the ray source assembly 400 further includes a magnetron structure 601 .

[0093] The magnetron structure 601 is used to control at least one of the cross-sectional area of ​​the electron beam, the position where the electron beam reaches the anode terminal 401, and the number of electrons in the electron beam.

[0094] In this embodiment, since the magnetic field also has an influence on the electric field, this embodiment can also set a magnetron structure 601 between the cathode terminal 402 and the anode terminal 401, and the magnetron structure 601 controls at least one of the cross-sectional area of ​​the electron beam, the position where the electron beam arrives at the anode terminal 401, and the number of electrons in the electron beam. In some embodiments, the magnetron structure 601 includes a coil assembly, and a magnetic field is generated by flowing current through the coil. The direction and intensity of the magnetic field can be adjusted. The magnetic field exerts a force on the electron beam, changing the movement of the electron beam. By adjusting the intensity and direction of the magnetic field, the focusing and orientation of the electron beam can be precisely controlled, thereby achieving the adjustment of at least one of the cross-sectional area of ​​the electron beam, the position where the electron beam arrives at the anode terminal 401, and the number of electrons in the electron beam.

[0095] In this embodiment, since the radiation source assembly 400 further includes a magnetron structure 601, and the magnetron structure 601 is used to control at least one of the cross-sectional area of ​​the electron beam, the position at which the electron beam arrives at the anode terminal 401, and the number of electrons in the electron beam, the magnetron structure 601 can be used to further control the electron beam, thereby improving the flexibility of the radiation source assembly. As an example, the magnetron structure 601 can be various magnetron structures such as an electromagnetic coil, an electromagnet, etc.

[0096] Therefore, in a specific application of the ray source assembly according to this embodiment, for example, the electron beam control unit 403 can first quickly adjust the electron beam from the cathode end 402 to change the number of electrons and the cross-sectional area of ​​the electron beam, and then the magnetron structure 601 can be used to adjust at least one of the cross-sectional area of ​​the electron beam, the position where the electron beam arrives at the anode end 401, and the number of electrons in the electron beam, so as to achieve precise adjustment of one or more of the cross-sectional area of ​​the electron beam, the position where the electron beam arrives at the anode end 401, and the number of electrons in the electron beam through two-stage adjustment.

[0097] In order to more clearly introduce the ray source assembly in the present application, it is illustrated here with reference to Figures 7 and 8. Figures 7 and 8 are schematic structural diagrams of another ray source assembly in an embodiment of the present application, respectively. As shown in Figures 7 and 8, the ray source assembly 400 may include an anode terminal 401, a cathode terminal 402, and an electron beam control section 403, an additional electron beam control section 501, and a magnetron structure 601 arranged between the anode terminal 401 and the cathode terminal 402. The electron beam control section 403 includes a first voltage control terminal 4031 and a second voltage control terminal 4032, i.e., the two voltage control terminals mentioned above. The additional electron beam control section 501 includes an additional first voltage control terminal 5011 and a second additional voltage control terminal 5012, and the magnetron structure 601 includes a magnetron control terminal 6011 and a magnetron control terminal 6012. The dotted lines in Figures 7 and 8 are schematic diagrams of the motion trajectory of the electron beam.

[0098] Taking Figure 7 as an example, in Figure 7, anode terminal 401 generates an electron beam and transmits the electron beam to cathode terminal 402. First voltage control terminal 4031 and second voltage control terminal 4032 can adjust the number of electrons in the electron beam that reach anode terminal 401 by controlling the voltage. The direction of the potential difference between cathode terminal 402 and first voltage control terminal 4031 and second voltage control terminal 4032, respectively, is consistent with the direction of motion of the electron beam. The magnitude of the tube current generated by the electron beam is negatively correlated with the absolute value of the control voltage.

[0099] The first additional voltage control terminal 5011 and the second additional voltage control terminal 5012 can control the cross-sectional area of ​​the electron beam and / or the position at which the electron beam reaches the anode terminal 401 by applying additional control voltages. The direction of the potential difference formed between the cathode terminal 402 and the first additional voltage control terminal 5011 and the second additional voltage control terminal 5012, respectively, is perpendicular to the direction of motion of the electron beam. The magnitude of the tube current generated by the electron beam is negatively correlated with the absolute value of the control voltage. The cross-sectional area of ​​the electron beam is negatively correlated with the absolute value of the additional control voltage.

[0100] If the absolute value of the additional control voltage corresponding to the first additional voltage control terminal 5011 is greater than the absolute value of the additional control voltage corresponding to the second additional voltage control terminal 5012, the electron beam arrives at the anode terminal 401 near the second additional voltage control terminal 5012. If the absolute value of the additional control voltage corresponding to the first additional voltage control terminal 5011 is less than the absolute value of the additional control voltage corresponding to the second additional voltage control terminal 5012, the electron beam arrives at the anode terminal 401 near the first additional voltage control terminal 5011. If the absolute value of the additional control voltage corresponding to the first additional voltage control terminal 5011 is equal to the absolute value of the additional control voltage corresponding to the second additional voltage control terminal 5012, the electron beam is not deflected.

[0101] The magnetron control end 6011 and the magnetron control end 6012 can further control at least one of the cross-sectional area of ​​the electron beam, the position where the electron beam reaches the anode end 401, and the number of electrons in the electron beam.

[0102] FIG8 shows FIG7 , with the relative positions of the electron beam control unit 403 and the additional electron beam control unit 501 swapped. The other principles remain the same and will not be further elaborated here. In FIG7 , the distance between the electron beam control unit 403 and the cathode terminal 402 is smaller than the distance between the additional electron beam control unit 501 and the cathode terminal 402. That is, in the direction of electron beam motion, the electron beam control unit 403 is located upstream of the additional electron beam control unit 501. The voltage of the additional electron beam control unit 501 can be greater than that of the electron beam control unit 403. That is, when both are at negative voltages, the absolute value of the voltage of the electron beam control unit 403 is greater than the absolute value of the voltage of the additional electron beam control unit 501. Therefore, the tube current can be adjusted first by the control voltage of the electron beam control unit 403, and then the cross-sectional area and deflection of the electron beam can be adjusted by the additional electron beam control unit 501. Simultaneously, the tube current is not affected during the adjustment process. In FIG8 , the distance between the electron beam control unit 403 and the cathode end 402 is greater than the distance between the additional electron beam control unit 501 and the cathode end 402 . This can reduce the engineering implementation difficulty of the ray source assembly 400 and is beneficial to actual production.

[0103] Figure 9 is a schematic diagram illustrating dose modulation according to an embodiment of the present application. It also illustrates a curve showing the actual tube current variation during the modulation process using the radiation source assembly 400 provided by this embodiment. As shown in Figure 9, the approach provided by this embodiment can increase the upper and lower limits of the actual tube current, thereby improving tube current control efficiency and, consequently, dose modulation efficiency.

[0104] As an example, when performing dose modulation, the filament current (corresponding to the current passing through the cathode end 402) can be maintained in advance at a required reasonable larger current value. According to the planned dose modulation curve, during the process of scanning with rays, each time the scanning data is sampled, the change in the control voltage can be regulated by the electron beam control unit 403 (for example, it can be a high-voltage generator) according to the required tube current corresponding to the desired ray dose, so as to achieve control of the tube current according to the sampling frequency, thereby achieving a modulation capability that is faster than conventional dose modulation, as shown in Figure 9.

[0105] In one embodiment, a ray control method applicable to the above-mentioned ray source assembly is also provided. FIG10 is a diagram of the application environment of the ray control method in an embodiment of the present application. A medical scanning device 1001 communicates with a computer device 1002 via wired or wireless communication. The medical scanning device 1001 includes, but is not limited to, a CT (Computed Tomography) device, a PET-CT device, an X-ray device, and the like. It is understood that the medical scanning device 1001 should include a ray source, which may include the above-mentioned ray source assembly 400.

[0106] The computer device 1002 can be, but is not limited to, various personal computers, laptops, smart phones, tablet computers and portable wearable devices. The portable wearable devices can be smart watches, smart bracelets, head-mounted devices, etc. Of course, the computer device 1002 can also be implemented using an independent server or a server cluster consisting of multiple servers.

[0107] In some embodiments, the computer device 1002 may also be disposed inside the medical scanning device 1001. The computer device 1002 includes but is not limited to a central processing unit (CPU), and may also include a digital signal processor (DSP), a field programmable gate array (FPGA), or at least one of other programmable logic devices.

[0108] FIG11 is a flow chart of a ray control method according to an embodiment of the present application. In an exemplary embodiment, as shown in FIG11 , a ray control method is provided. The method may include steps S1101 to S1102. As a non-limiting example, a portion or all of the method may be executed by the computer device shown in FIG10 .

[0109] S1101, determining a target tube current of a radiation source according to a preset radiation dose.

[0110] In this embodiment, the preset radiation dose is used to indicate the required scanning dose during the scanning process. Optionally, the preset radiation dose can be a time-related sequence, for example, time 1 to time 5 corresponds to preset radiation dose 1, time 6 to time 10 corresponds to preset radiation dose 2, and so on.

[0111] Among them, the preset radiation dose can be a parameter stored in the computer device after advance planning, or a parameter determined by the computer device in response to the user's input operation, or a parameter determined by the computer device after analyzing the height, weight, gender and other information of the scanned object. This embodiment does not impose any restrictions.

[0112] It is understandable that different radiation doses correspond to different tube currents of the radiation source. A first correspondence between different radiation doses and tube currents of different radiation sources can be obtained, and then the target tube current of the radiation source can be determined based on the preset radiation doses and the first correspondence. For example, in the first correspondence, radiation dose 1 corresponds to tube current 1, and radiation dose 2 corresponds to tube current 2. In the preset radiation doses, the preset radiation doses correspond to 1 from time 1 to time 5, and the preset radiation doses correspond to 2 from time 6 to time 10. Therefore, the target tube current of the radiation source at time 1 to time 5 is tube current 1, and the target tube current of the radiation source at time 6 to time 10 is tube current 2.

[0113] S1102, determining a control voltage according to the target tube current.

[0114] In this embodiment, after determining the target tube current, a control voltage can be determined based on the target tube current. The control voltage is used to adjust the number of electrons arriving at the anode terminal of the radiation source from the electron beam emitted from the cathode terminal of the radiation source, thereby adjusting the corresponding tube current of the radiation source to the target tube current. In other words, the control voltage is used to adjust the number of electrons arriving at the anode terminal of the radiation source from the electron beam emitted from the cathode terminal of the radiation source. The principle of adjusting the number of electrons arriving at the anode terminal of the radiation source using the control voltage can be referred to in the above embodiment and will not be further described here.

[0115] Optionally, a second correspondence between different control voltages and different tube currents can be obtained. This second correspondence may be in the form of, but not limited to, a two-dimensional table or a mathematical model. Furthermore, the control voltage can be determined based on the target tube current and the second correspondence. For example, in the second correspondence, tube current 1 corresponds to control voltage 1, and tube current 2 corresponds to control voltage 2. Therefore, the control voltage from time 1 to time 5 can be determined to be control voltage 1, and the control voltage from time 6 to time 10 can be determined to be control voltage 2.

[0116] In some embodiments, this radiation control method can also be applied to certain clinical applications involving dose modulation, such as ECG (electrocardiogram)-DOM in cardiac scans, to reduce the dose and modulation efficiency of cardiac scans. It is understood that this radiation control method can also be applied to imaging examinations of areas such as the head and lungs.

[0117] In the above-described radiation control method, the target tube current of the radiation source is determined based on a preset radiation dose, and a control voltage is determined based on the target tube current. Because the control voltage is used to adjust the number of electrons in the electron beam emitted from the cathode end of the radiation source that reach the anode end of the radiation source, adjusting the control voltage can adjust the number of electrons in the electron beam that reach the anode end, thereby adjusting the tube current and thus the scanning dose. This process does not require changing the temperature of the filament current, thereby reducing the impact of the temperature change rate of the filament material and improving the efficiency of dose modulation.

[0118] In an exemplary embodiment, it is also possible to combine the prior art method for adjusting tube current with the voltage control method of this embodiment. For example, the dose modulation method of this embodiment can be used in the X direction, while the conventional dose modulation method of the prior art can be used in the Z direction. This method can not only adjust the dose in both the X and Z directions, but also reduce the average current of the filament in the radiation source, preventing the filament current from being continuously high, extending the filament life, and improving the reliability and life of the tube.

[0119] In an exemplary embodiment, a target focus requirement may also be obtained, and an additional control voltage may be determined based on the target focus requirement. The additional control voltage is used to adjust the cross-sectional area of ​​the electron beam emitted from the cathode end of the radiation source and / or the position at which the electron beam reaches the anode end of the radiation source. The target focus requirement includes a focus size requirement and / or a focus position requirement.

[0120] It can be understood that if the target focus requirement includes a focus size requirement, the additional control voltage can adjust the cross-sectional area of ​​the electron beam emitted from the cathode end of the ray source; if the target focus requirement includes a focus position requirement, the additional control voltage can adjust the position of the electron beam reaching the anode end of the ray source.

[0121] Optionally, a third correspondence between different target focus requirements and additional control voltages may be obtained, and after the target focus requirement is obtained, the additional control voltage may be determined according to the target focus requirement and the third correspondence.

[0122] The principles of adjusting the cross-sectional area of ​​the electron beam emitted from the cathode end of the ray source and the position where the electron beam reaches the anode end of the ray source can be referred to the above embodiments and will not be repeated here.

[0123] In an exemplary embodiment, the cathode interface connected to the cathode terminal 402 can support fast tube current (mA) modulation. Optionally, fast mA modulation can be combined with switching of kilovolt-peak (kV) applied between the cathode terminal 402 and the anode terminal 401. High kV can be matched to low mA, and low kV to high voltage mA, to achieve dose balance for energy spectrum scanning.

[0124] During energy spectrum scanning, multiple high-voltage electric fields are applied to the cathode and anode ends of the X-ray source. Different high-voltage electric fields produce different electron beam energies. Therefore, even with the same tube current, the scan doses corresponding to different high-voltage electric fields will vary. To ensure the same scan doses for different high-voltage electric fields, the voltage can be controlled to reduce the tube current when the high-voltage electric field is high and increase it when the high-voltage electric field is low.

[0125] In an exemplary embodiment, the rapid dose modulation function can be combined with rapid kV switching to implement dose modulation during rapid kV switching. For example, in an actual implementation, dose modulation curves can be first planned according to different kilovolt scanning parameters, and then two or more sets of dose modulation curves can be combined and controlled to implement dose modulation during kV switching.

[0126] In other words, multiple preset voltages can be obtained, and a control voltage corresponding to each preset voltage can be determined based on the preset voltages. The control voltages can be used to adjust the number of electrons in the electron beam emitted from the cathode end of the radiation source that reach the anode end of the radiation source, thereby adjusting the corresponding tube current of the radiation source to the desired tube current. The preset voltages are used to indicate multiple sets of high-voltage electric fields in the fast kV range.

[0127] Further optionally, a dose modulation curve corresponding to each preset voltage can be obtained, and then the control voltage corresponding to each preset voltage can be determined based on the preset voltage and the dose modulation curve corresponding to each preset voltage. The dose modulation curve corresponding to the preset voltage includes a correspondence between different scan doses and control voltages. For example, in dose modulation curve 1 corresponding to preset voltage 1, scan dose 1 corresponds to control voltage 1, while in dose modulation curve 1 corresponding to preset voltage 2, the same scan dose 1 corresponds to control voltage 2. Therefore, in order to ensure that the scan dose corresponding to preset voltage 1 and the scan dose corresponding to preset voltage 2 are the same, control voltage 1 is used under preset voltage 1, and control voltage 2 is used under preset voltage 2.

[0128] It should be understood that, although the various steps in the flowcharts involved in the various embodiments described above are displayed in sequence according to the instructions of the arrows, these steps are not necessarily executed in sequence in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order restriction on the execution of these steps, and these steps can be executed in other orders. Moreover, at least a portion of the steps in the flowcharts involved in the various embodiments described above can include multiple steps or multiple stages, and these steps or stages are not necessarily executed and completed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a portion of steps or stages in other steps.

[0129] Based on the same inventive concept, embodiments of the present application further provide a ray control device for implementing the aforementioned ray control method. The solution provided by this device is similar to the solution described in the aforementioned method. Therefore, the specific limitations of one or more ray control device embodiments provided below can be found in the above-described limitations of the ray control method and are not further elaborated here.

[0130] FIG12 is a structural block diagram of a ray control and adjustment device according to an embodiment of the present application. In an exemplary embodiment, as shown in FIG12 , a ray control device is provided, including: a first determination module 1201 and a second determination module 1202, wherein:

[0131] The first determining module 1201 determines a target tube current of a radiation source according to a preset radiation dose.

[0132] The second determining module 1202 determines a control voltage according to the target tube current; the control voltage is used to adjust the number of electrons in the electron beam emitted from the cathode end of the ray source that reach the anode end of the ray source.

[0133] In the above-mentioned radiation control device, the target tube current of the radiation source is determined based on a preset radiation dose, and the control voltage is determined based on the target tube current. Because the control voltage is used to adjust the number of electrons in the electron beam emitted from the cathode end of the radiation source that reach the anode end of the radiation source, adjusting the control voltage can adjust the number of electrons in the electron beam reaching the anode end, thereby adjusting the tube current to adjust the scanning dose. This process does not require changing the temperature of the filament current, thereby reducing the impact of the temperature change rate of the filament material and improving the efficiency of dose modulation.

[0134] Each module in the aforementioned ray control device may be implemented in whole or in part through software, hardware, or a combination thereof. Each module may be embedded in or independent of a processor in a computer device in the form of hardware, or may be stored in a computer device memory in the form of software, so that the processor can call and execute the corresponding operations of each module.

[0135] Figure 13 is a diagram of the internal structure of a computer device in an embodiment of the present application. In an exemplary embodiment, a computer device is provided, which may be a server, and its internal structure may be as shown in Figure 13. The computer device includes a processor, memory, an input / output (I / O) interface, and a communication interface. The processor, memory, and I / O interface are connected via a system bus, and the communication interface is connected to the system bus via the I / O interface. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program, and a database. The internal memory provides an environment for the operation of the operating system and computer program in the non-volatile storage medium. The database of the computer device is used to store relevant data. The I / O interface of the computer device is used to exchange information between the processor and external devices. The communication interface of the computer device is used to communicate with external terminals via a network connection. When executed by the processor, the computer program implements a ray control method.

[0136] Those skilled in the art will understand that the structure shown in FIG13 is merely a block diagram of a portion of the structure related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than shown in the figure, or combine certain components, or have a different arrangement of components.

[0137] In an exemplary embodiment, a computer device is provided, including a memory and a processor, wherein a computer program is stored in the memory, and when the processor executes the computer program, the following steps are implemented:

[0138] determining a target tube current of the radiation source according to a preset radiation dose;

[0139] A control voltage is determined according to the target tube current; the control voltage is used to adjust the number of electrons in the electron beam emitted from the cathode end of the ray source that reach the anode end of the ray source.

[0140] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the following steps are implemented:

[0141] determining a target tube current of the radiation source according to a preset radiation dose;

[0142] A control voltage is determined according to the target tube current; the control voltage is used to adjust the number of electrons in the electron beam emitted from the cathode end of the ray source that reach the anode end of the ray source.

[0143] In one embodiment, a computer program product is provided, comprising a computer program, which, when executed by a processor, implements the following steps:

[0144] determining a target tube current of the radiation source according to a preset radiation dose;

[0145] A control voltage is determined according to the target tube current; the control voltage is used to adjust the number of electrons in the electron beam emitted from the cathode end of the ray source that reach the anode end of the ray source.

[0146] Those skilled in the art will appreciate that all or part of the processes in the above-mentioned embodiment methods can be implemented by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, database or other media used in the embodiments provided in this application may include at least one of non-volatile and volatile memory. Non-volatile memory may include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory may include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in the various embodiments provided herein may include at least one of a relational database and a non-relational database. Non-relational databases may include, but are not limited to, distributed databases based on blockchains. The processor involved in the various embodiments provided herein may be, but are not limited to, a general-purpose processor, a central processing unit, a graphics processing unit, a digital signal processor, a programmable logic unit, a data processing logic unit based on quantum computing, and the like.

[0147] The technical features of the above embodiments can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0148] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present application shall be determined by the appended claims.

Claims

1. A radiation source assembly, comprising: an anode terminal (401), used for receiving an electron beam and generating rays according to the received electron beam; A cathode terminal (402) for emitting an electron beam toward the anode terminal (401); as well as An electron beam control unit (403) is disposed between the cathode terminal (402) and the anode terminal (401) and is used to adjust the number of electrons in the electron beam that reach the anode terminal (401) by controlling a voltage.

2. The radiation source assembly according to claim 1, wherein: The electron beam control unit (403) comprises at least two voltage control terminals, and the at least two voltage control terminals form a potential difference with the cathode terminal (402), and the direction of the potential difference is consistent with the moving direction of the electron beam.

3. The radiation source assembly according to claim 1 or 2, wherein: The electron beam control section (403) is configured so that the magnitude of the tube current formed by the electron beam is negatively correlated with the potential difference between the cathode terminal (402) and the electron beam control section (403).

4. The radiation source assembly according to any one of claims 1 to 3, wherein: The control voltage is a negative voltage and is smaller than the voltage of the cathode terminal (402), and the electron beam control unit (403) is configured so that the magnitude of the tube current formed by the electron beam is negatively correlated with the absolute value of the control voltage.

5. The radiation source assembly according to any one of claims 1 to 4, wherein: The electron beam control unit (403) is further configured to control the cross-sectional area of ​​the electron beam and / or the position where the electron beam reaches the anode terminal (401) through the control voltage.

6. The radiation source assembly according to any one of claims 1 to 5, wherein: The electron beam control unit (403) comprises a first voltage control terminal (4031) and a second voltage control terminal (4032) respectively located on both sides of the moving direction of the electron beam.

7. The radiation source assembly according to claim 6, wherein: The first voltage control terminal (4031) and the second voltage control terminal (4032) are configured to control the number of electrons passing through the first voltage control terminal (4031) and the second voltage control terminal (4032) in the direction of electron beam movement based on the corresponding control voltage.

8. The radiation source assembly according to claim 6 or 7, wherein: The first voltage control terminal (4031) and the second voltage control terminal (4032) are configured to control the deflection of the electron beam based on the corresponding control voltage.

9. The radiation source assembly according to any one of claims 1 to 8, wherein: The ray source assembly further comprises: An additional electron beam control unit (501) is used to control the cross-sectional area of ​​the electron beam and / or the The electron beam reaches the position of the anode terminal (401).

10. The radiation source assembly according to claim 9, wherein: The additional control voltage is a negative voltage and is smaller than the voltage of the cathode terminal (402), and the additional electron beam control unit (501) is configured so that the cross-sectional area of ​​the electron beam is negatively correlated with the absolute value of the additional control voltage.

11. The radiation source assembly according to claim 9 or 10, wherein: The additional electron beam control section (501) comprises a first additional voltage control terminal and a second additional voltage control terminal, wherein the first additional voltage control terminal provides a first additional control voltage, and the second additional voltage control terminal provides a second additional control voltage. The additional electron beam control section (501) is configured to control the deflection of the electron beam based on the first additional control voltage and the second additional control voltage.

12. The radiation source assembly according to any one of claims 9 to 11, wherein: In the moving direction of the electron beam, the electron beam control section (403) is located upstream of the additional electron beam control section (501).

13. The radiation source assembly according to any one of claims 1 to 12, wherein: The ray source assembly further comprises: The magnetron structure (601) is used to control at least one of the cross-sectional area of ​​the electron beam, the position where the electron beam reaches the anode terminal (401), and the number of electrons in the electron beam.

14. A ray control method, applied to the ray source assembly according to any one of claims 1 to 13, comprising: Determine the target tube current of the radiation source according to the preset radiation dose; The control voltage is determined according to the target tube current.

15. A computer-readable storage medium having a computer program stored thereon, wherein the computer program implements the steps of the ray control method according to claim 14 when executed by a processor.

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