Member for semiconductor manufacturing apparatus

Abstract

This wafer mounting table 10, which is an example of a member for a semiconductor manufacturing apparatus, includes a ceramic plate 20, a base plate 30, a base plate through-hole 34, an insulating tube 50, and a bonding layer 60. An adhesive pool 55 is provided on the outer peripheral surface 50b of the insulating tube 50. The bonding layer 60 has an insulating tube outer peripheral surface bonding part 62 for bonding the inner peripheral surface 34b of the base plate through-hole 34 and the outer peripheral surface 50b of the insulating tube 50. The insulating tube outer peripheral surface bonding part is formed from the lower surface 23 of the ceramic plate 20 to partway through the adhesive pool 55.

Description

Semiconductor manufacturing equipment components

[0001] The present invention relates to a member for a semiconductor manufacturing device.

[0002] Conventionally, semiconductor manufacturing equipment components have been known, including a ceramic plate having a wafer mounting surface on its upper surface and a built-in electrode, and a base plate attached to the lower surface of the ceramic plate. For example, Patent Document 1 discloses such a semiconductor manufacturing equipment component, including a base plate through-hole penetrating the base plate in the thickness direction, an insulating tube inserted into the base plate through-hole, and an annular member positioned between the outer circumferential surface of the insulating tube and the inner circumferential surface of the base plate through-hole. The insulating tube is fixed to the inner circumferential surface of the base plate through-hole by the annular member. This maintains the outer circumferential surface of the insulating tube and the inner circumferential surface of the base plate through-hole in a non-contact state, thereby reducing thermal stress between them. The insulating tube has a recess on its outer circumferential surface to prevent misalignment of the annular member, and the annular member is fixed in this recess. It is also described that a resin member such as silicone resin may be provided between the outer circumferential surface of the insulating tube and the inner circumferential surface of the base plate through-hole, but the annular member is fixed in the recess, and no resin member is inserted.

[0003] International Publication No. 2020 / 111194

[0004] However, for example, in Patent Document 1, when a resin member is provided between the outer surface of the insulating tube and the inner surface of the hole, the vertical length of the resin member cannot be controlled, and the temperature immediately above the base plate through-hole can vary from product to product.

[0005] The present invention has been made to solve such problems, and its main object is to suppress variations in temperature between products in the vicinity of the wafer mounting surface directly above the base plate through-hole.

[0006] [1] A semiconductor manufacturing equipment member of the present invention comprises: a ceramic plate having a wafer mounting surface on its upper surface and incorporating an electrode; a base plate provided on the underside of the ceramic plate; a base plate through-hole that passes through the base plate in the vertical direction; an insulating tube inserted into the base plate through-hole; an adhesive reservoir provided on at least one of the inner peripheral surface of the base plate through-hole and the outer peripheral surface of the insulating tube, and positioned below and away from the upper surface of the insulating tube; and an adhesive layer formed from the underside of the ceramic plate to partway through the adhesive reservoir, having an insulating tube outer peripheral surface adhesive portion that bonds the inner peripheral surface of the base plate through-hole to the outer peripheral surface of the insulating tube.

[0007] This semiconductor manufacturing equipment component includes an adhesive reservoir on at least one of the inner circumferential surface of the base plate through hole and the outer circumferential surface of the insulating tube, and the insulating tube outer circumferential surface adhesive portion extends from the underside of the ceramic plate to partway into the adhesive reservoir. This allows the insulating tube outer circumferential surface adhesive portion to penetrate into the adhesive reservoir and expand vertically, making it easy to control the vertical length of the insulating tube outer circumferential surface adhesive portion. If the vertical length of the insulating tube outer circumferential surface adhesive portion varies from product to product, the temperature of the wafer mounting surface immediately above the base plate through hole can vary from product to product. However, controlling the vertical length of the insulating tube outer circumferential surface adhesive portion in this case reduces such variation. The adhesive reservoir may also be located at a distance below the top surface of the insulating tube.

[0008] In this specification, "upper" and "lower" do not represent absolute positional relationships, but rather relative positional relationships. Therefore, depending on the orientation of the semiconductor manufacturing equipment component, "upper" and "lower" may become "lower" and "upper," "left" and "right," or "front" and "rear."

[0009] [2] In the semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member described in [1] above), the adhesive layer may have an insulating tube upper surface adhesive portion that is continuous with the insulating tube outer peripheral surface adhesive portion and that bonds the lower surface of the ceramic plate to the upper surface of the insulating tube. This allows for firm bonding not only between the inner peripheral surface of the base plate through hole and the outer peripheral surface of the insulating tube, but also between the lower surface of the ceramic plate and the upper surface of the insulating tube.

[0010] [3] In the semiconductor manufacturing equipment component of the present invention (the semiconductor manufacturing equipment component described in [1] or [2] above), the vertical position of the upper end of the adhesive reservoir may vary stepwise or continuously when viewed along the outer periphery of the insulating tube. This allows for precise adjustment of the temperature in the vicinity of the base plate through-hole.

[0011] [4] In the semiconductor manufacturing equipment component of the present invention (the semiconductor manufacturing equipment component described in [3] above), the base plate may have built-in refrigerant channels, and the base plate through-hole may be located between adjacent refrigerant channels, with one of the adjacent refrigerant channels having a higher ceiling height than the other. In this case, the higher-ceiling refrigerant channel among the adjacent refrigerant channels can more easily dissipate heat from the ceramic plate than the lower-ceiling refrigerant channel. Therefore, the temperature of the wafer mounting surface gradually decreases from the position facing the higher-ceiling refrigerant channel toward the position facing the lower-ceiling refrigerant channel. The area of ​​the wafer mounting surface directly above the base plate through-hole exhibits a different tendency for heat dissipation than the remaining area, potentially forming a temperature singularity. Therefore, the vertical position of the upper end of the adhesive puddle and the vertical length of the adhesive portion on the outer circumferential surface of the insulating tube may be adjusted to achieve a desired temperature distribution on the wafer mounting surface, including the area directly above the base plate through-hole.

[0012] For example, the adhesive reservoir may be configured so that its upper end is highest at the position closest to the coolant flow path with a high ceiling and its upper end is lowest at the position closest to the coolant flow path with a low ceiling. This configuration can cancel out temperature differences due to differences in the height of the ceiling surfaces of the coolant flow paths on the wafer mounting surface in the vicinity of the base plate through-holes, thereby improving thermal uniformity. Furthermore, for example, the adhesive reservoir may be configured so that its upper end is lowest at the position closest to the coolant flow path with a high ceiling and its upper end is highest at the position closest to the coolant flow path with a low ceiling. This configuration can create temperature differences on the wafer mounting surface in the vicinity of the base plate through-holes that tend to be the same as the temperature differences due to differences in the height of the ceiling surfaces of the coolant flow paths.

[0013] [5] In the semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member described in any one of [1] to [4] above), the base plate through-hole may serve as a power supply member insertion hole that is provided in the semiconductor manufacturing equipment member downward from the electrode and through which a power supply member that supplies power to the electrode is inserted, a lift pin hole that passes through the semiconductor manufacturing equipment member in the vertical direction and through which a lift pin is inserted, or a gas hole that passes through the semiconductor manufacturing equipment member in the vertical direction and through which gas is supplied to the wafer mounting surface.

[0014] 2. A plan view of the wafer mounting table 10. A cross-sectional view taken along line A-A in FIG. 1. A partially enlarged view of FIG. 2. A perspective view of an insulating tube 50. An explanatory diagram of a process for bonding the insulating tube 50. An explanatory diagram of the results of an analysis of the relationship between the amount of creep-up of the bonding portion on the outer circumferential surface of the insulating tube and the temperature difference obtained by subtracting the outer circumferential temperature from the temperature directly above the power feed member. A perspective view of another example of the insulating tube 50. A perspective view of another example of the insulating tube 50. A partially enlarged view of another example of the wafer mounting table 10. A partially enlarged view of the wafer mounting table 110. An enlarged perspective cross-sectional view of the periphery of a base plate through-hole 134 of a base plate 130. An enlarged perspective cross-sectional view of the periphery of a base plate through-hole 134 of another example of the base plate 130. An enlarged perspective cross-sectional view of the periphery of a base plate through-hole 134 of another example of the base plate 130.

[0015] [First Embodiment] A preferred embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a plan view of a wafer mounting table 10, Fig. 2 is a cross-sectional view taken along line A-A in Fig. 1, Fig. 3 is an enlarged view of a portion of Fig. 2 (an enlarged view of the area enclosed by the two-dot chain line), and Fig. 4 is a perspective view of an insulating tube 50.

[0016] The wafer mounting table 10 is an example of a semiconductor manufacturing equipment component of the present invention, and as shown in FIG. 2 , includes a ceramic plate 20, a base plate 30, a bonding layer 40, a base plate through-hole 34, an insulating tube 50, and a power supply member 70.

[0017] The ceramic plate 20 is a circular ceramic plate (e.g., 300 mm in diameter and 5 mm in thickness) made of sintered alumina, sintered aluminum nitride, or the like. The upper surface of the ceramic plate 20 serves as a wafer mounting surface 21 on which a wafer W is mounted. The ceramic plate 20 incorporates an electrostatic electrode 22. Although not shown, an annular seal band is formed along the outer edge of the wafer mounting surface 21 of the ceramic plate 20, and multiple circular small protrusions are formed on the entire inner surface of the seal band. The electrostatic electrode 22 is a planar mesh electrode connected to an external DC power supply (not shown) via a power supply member 70. When a DC voltage is applied to the electrostatic electrode 22, the wafer W is attracted and fixed to the wafer mounting surface 21 by electrostatic attraction. When the DC voltage application is released, the wafer W is released from the wafer mounting surface 21.

[0018] The base plate 30 is a circular plate (e.g., a circular plate with the same diameter as or larger than the ceramic plate 20, 25 mm thick) with good electrical and thermal conductivity. A refrigerant flow path 32 through which a refrigerant circulates is formed within the base plate 30. The refrigerant flowing through the refrigerant flow path 32 is preferably a liquid, and is preferably electrically insulating. Examples of electrically insulating liquids include a fluorine-based inert liquid. As shown in FIG. 1 , the refrigerant flow path 32 is formed in a spiral shape in a plan view across the entire base plate 30 from one end (inlet 32 ​​in) to the other end (outlet 32 ​​out) in a single stroke. The inlet 32 ​​in and outlet 32 ​​out of the refrigerant flow path 32 are connected to a supply port and a recovery port of an external refrigerant device (not shown), respectively. The refrigerant supplied from the supply port of the external refrigerant device to the inlet 32in of the refrigerant flow path 32 passes through the refrigerant flow path 32, returns from the outlet 32out of the refrigerant flow path 32 to the recovery port of the external refrigerant device, and is then temperature-adjusted before being supplied again from the supply port to the inlet 32in of the refrigerant flow path 32. The base plate 30 is connected to a radio frequency (RF) power source and is also used as an RF electrode.

[0019] The base plate 30 may be made of a metal material or a metal-ceramic composite material. Metal materials include Al, Ti, Mo, and alloys thereof. Metal-ceramic composite materials include metal matrix composites (MMCs) and ceramic matrix composites (CMCs). Specific examples of such composite materials include materials containing Si, SiC, and Ti (also known as SiSiCTi), porous SiC impregnated with Al and / or Si, and composites of Al2O3 and TiC. It is preferable to select a material for the base plate 30 with a thermal expansion coefficient similar to that of the ceramic plate 20. When the ceramic plate 20 is made of alumina, the base plate 30 is preferably made of pure Ti or an α-β Ti alloy. This is because the thermal expansion coefficients of pure Ti and α-β Ti alloys are similar to that of alumina. The base plate 30 may be formed of a material with a lower thermal conductivity than Al, or may be formed of a material with a lower thermal conductivity than the material of the ceramic plate 20 (e.g., alumina). Examples of such materials include pure Ti and Ti-containing materials, such as α-β Ti. The effects of the present invention are enhanced when the base plate 30 is made of a Ti-containing material. The thermal conductivity of the base plate 30 may be 50 W / mK or less, or may be 5 to 20 W / mK. For example, the thermal conductivity of pure Ti is 17 W / mK, and the thermal conductivity of an α-β Ti alloy is 7.5 W / mK. The thermal conductivity of Al is 150 to 200 W / mK.

[0020] The bonding layer 40 is a resin adhesive layer, which bonds the lower surface 23 of the ceramic plate 20 to the upper surface of the base plate 30. Examples of materials for the resin adhesive layer include insulating resins such as epoxy resin, acrylic resin, and silicone resin. The bonding layer 40 may be made of insulating resin containing a filler. The filler preferably has a higher thermal conductivity than the insulating resin of the bonding layer 40, and may be, for example, alumina or aluminum nitride.

[0021] The base plate through-hole 34 is a generally cylindrical hole that passes through the base plate 30 in the vertical direction and is provided so as not to pass through the coolant flow path 32. The base plate through-hole 34 communicates with the bonding layer through-hole 44. The bonding layer through-hole 44 is a generally cylindrical hole that passes through the bonding layer 40 in the vertical direction.

[0022] The insulating tube 50 is housed in the base plate through-hole 34 and the bonding layer through-hole 44. The insulating tube 50 is a substantially cylindrical member made of an electrically insulating material (for example, the same material as the ceramic plate 20), and has an insulating tube through-hole 54 that passes through the insulating tube 50 in the vertical direction along the central axis of the insulating tube 50.

[0023] As shown in FIG. 3 , the insulating tube 50 is bonded to the lower surface 23 of the ceramic plate 20 and the inner circumferential surface 34b of the base plate through-hole 34 via an adhesive layer 60. The upper end of the base plate through-hole 34 has a tapered surface 34c with a C-chamfered shape. The adhesive layer 60 includes an insulating tube upper surface adhesive portion 61 that bonds the lower surface 23 of the ceramic plate 20 to the upper surface 50a of the insulating tube 50, and an insulating tube outer circumferential surface adhesive portion 62 that bonds the inner circumferential surface 34b of the base plate through-hole 34 to the outer circumferential surface 50b of the insulating tube 50. Examples of materials for the adhesive layer 60 include insulating resins such as epoxy resin, acrylic resin, and silicone resin. The adhesive layer 60 may be formed by adding a filler to the insulating resin. The filler preferably has a higher thermal conductivity than the insulating resin of the adhesive layer 60, and may be, for example, alumina or aluminum nitride. The adhesive layer 60 may have a higher thermal conductivity than the bonding layer 40.

[0024] As shown in Figures 3 and 4, an adhesive reservoir 55 is provided on the outer surface 50b of the insulating tube 50, at a position a distance x below the lower surface 23 of the ceramic plate 20. The adhesive reservoir 55 is an annular U-shaped groove that surrounds the outer periphery of the insulating tube 50 and opens to the outer surface 50b of the insulating tube 50. The depth (radial length) u of the adhesive reservoir 55 is, for example, 0.1 mm or more and 0.5 mm or less. The depth u of the adhesive reservoir 55 may be at least twice the distance (radial length) w between the inner circumferential surface 34b (excluding the tapered surface 34c) of the base plate through hole 34 above the adhesive reservoir 55 and the outer surface 50b of the insulating tube 50. The upper end (upper wall surface) 55a of the adhesive reservoir 55 is preferably positioned lower than the ceiling surface 32a of the refrigerant flow path 32. The inner circumferential surface 34b (including the tapered surface 34c) of the base plate through-hole 34 and the outer circumferential surface 50b of the insulating tube 50 are bonded by an insulating tube outer circumferential surface adhesive portion 62 of the adhesive layer 60. The insulating tube outer circumferential surface adhesive portion 62 extends from the lower surface 23 of the ceramic plate 20 to the middle of the adhesive puddle 55 (here, a position a distance h below the lower surface 23 of the ceramic plate 20). The distance (vertical length) between the lower surface 23 of the ceramic plate 20 and the lower end of the insulating tube outer circumferential surface adhesive portion 62 is also referred to as the creep-up amount h of the insulating tube outer circumferential surface adhesive portion 62. Note that the greater the creep-up amount h, the more likely the temperature in the vicinity directly above it is to be lower relative to other portions. The value h-x, which is the length of the portion of the insulating tube outer circumferential surface adhesive portion 62 formed in the adhesive puddle 55, is preferably 0.5 mm or less. This value h-x may be greater than 0 mm. The insulating tube upper surface bonding portion 61 is provided continuous with the insulating tube outer peripheral surface bonding portion 62. The insulating tube upper surface bonding portion 61 has a thickness t of, for example, 0.05 mm or more and 0.2 mm or less.

[0025] The power supply member 70 is, for example, a metal rod. Metals used for the power supply member 70 include, for example, W, Mo, and Ni, and it is preferable for the thermal expansion coefficient of the metal to be close to that of the ceramic plate 20. As shown in FIG. 3 , the power supply member 70 is inserted into the insulating tube through-hole 54 and the ceramic plate blind hole 24 and electrically connected to the electrostatic electrode 22 exposed at the bottom of the ceramic plate blind hole 24 to supply power to the electrostatic electrode 22. The ceramic plate blind hole 24 is a substantially cylindrical hole extending from the underside 23 of the ceramic plate 20 to the electrostatic electrode 22 and has a smaller diameter than the insulating tube through-hole 54. The power supply member 70 is electrically insulated from the base plate 30 by insulating tubes 50 disposed in the base plate through-hole 34 and the bonding layer through-hole 44. Instead of being composed of a single metal rod, the power supply member 70 may be composed of a columnar upper metal terminal and a columnar lower metal terminal connected by a flexible metal wire. The base plate through-hole 34, the bonding layer through-hole 44, and the ceramic plate blind hole 24 correspond to the power supply member insertion hole of the present invention.

[0026] Next, the step of adhering the insulating tube 50 in the manufacturing method of the wafer mounting table 10 will be described with reference to Fig. 5. Fig. 5 is an explanatory diagram of this step. Note that in Figs. 5A to 5D, the wafer mounting surface 21 of the ceramic plate 20 faces downward. Figs. 5A to 5D are also partially enlarged views of the periphery of the base plate through-hole 34.

[0027] First, a bonded assembly is prepared in which the ceramic plate 20 and the base plate 30 are bonded together with the bonding layer 40 ( FIG. 5A ). In this bonded assembly, an electrostatic electrode 22 is embedded in the ceramic plate 20. Furthermore, in this bonded assembly, a power supply member 70 is inserted into the ceramic plate blind hole 24 via the base plate through-hole 34 and the bonding layer through-hole 44, and is electrically connected to the electrostatic electrode 22. Next, an adhesive 60x is applied between the tapered surface 34c of the base plate through-hole 34 and the underside 23 of the ceramic plate 20, and the insulating tube 50 is inserted into the base plate through-hole 34 so that the upper surface 50a of the insulating tube 50 faces the adhesive 60x ( FIG. 5B ). Next, when the insulating tube 50 is pressed toward the ceramic plate 20, the adhesive 60x spreads between the lower surface 23 of the ceramic plate 20 and the upper surface 50a of the insulating tube 50, and between the inner circumferential surface 34b of the base plate through-hole 34 and the outer circumferential surface 50b of the insulating tube 50 ( FIG. 5C ). When the insulating tube 50 is further pressed toward the ceramic plate 20, the adhesive 60x fills the gap between the lower surface 23 of the ceramic plate 20 and the upper surface 50a of the insulating tube 50, and also creeps up between the inner circumferential surface 34b of the base plate through-hole 34 and the outer circumferential surface 50b of the insulating tube 50, forming partway up into the adhesive puddle 55. The amount of adhesive 60x is preset so that it slightly exceeds the upper end 55a of the adhesive puddle 55. When the adhesive 60x solidifies in this state, the ceramic plate 20 and the base plate 30 are bonded to the insulating tube 50 via the adhesive layer 60. In this manner, the wafer mounting table 10 is obtained ( FIG. 5D ).

[0028] Next, an example of how the wafer mounting table 10 configured as described above is described. First, with the wafer mounting table 10 installed in a chamber (not shown), a wafer W is placed on the wafer mounting surface 21. The chamber is then depressurized using a vacuum pump to a predetermined vacuum level, and a DC voltage is applied to the electrostatic electrode 22 of the ceramic plate 20 to generate an electrostatic adsorption force, thereby adsorbing and fixing the wafer W to the wafer mounting surface 21. Next, a reactive gas atmosphere at a predetermined pressure (e.g., several tens to several hundreds of Pa) is created in the chamber. In this state, an RF voltage is applied between an upper electrode (not shown) provided on the ceiling of the chamber and the base plate 30 of the wafer mounting table 10 to generate plasma. The surface of the wafer W is processed by the generated plasma. A coolant is circulated through the coolant flow passages 32 of the base plate 30 as needed.

[0029] When processing a wafer W with plasma in this manner, the heat input from the plasma is removed by the base plate 30, allowing the wafer mounting surface 21 to be controlled to the desired temperature. However, if the amount of creep-up h of the insulating tube outer peripheral surface adhesive portion 62 cannot be controlled, the temperature immediately above the base plate through-hole may vary from product to product. This point will be explained using FIG. 6 . FIG. 6A is a graph showing the relationship between the amount of creep-up h of the insulating tube outer peripheral surface adhesive portion 62 and the temperature difference obtained by subtracting the peripheral temperature from the temperature immediately above the power supply member. FIG. 6B is a partially enlarged view of the wafer mounting table 210 used in the analysis. The measurement points for the temperature immediately above the power supply member and the peripheral temperature are as shown in FIG. 6B. The cross section shown in FIG. 6B corresponds to the cross section shown in FIG. 3. Note that in FIG. 6B, the same components as those in the wafer mounting table 10 are designated by the same reference numerals. The wafer mounting table 210 is identical to the wafer mounting table 10, except that an insulating tube 250 without an adhesive reservoir on its outer peripheral surface 250b is used instead of the insulating tube 50. The wafer mounting table 210 is made of the following materials: alumina (thermal conductivity 30 W / mK) for the ceramic plate 20, Ti (thermal conductivity 17.5 W / mK) for the base plate 30, silicone resin (thermal conductivity 0.2 W / mK) for the bonding layer 40, alumina (thermal conductivity 30 W / mK) for the insulating tube 250, alumina filler-containing silicone resin (thermal conductivity 2.2 W / mK) for the adhesive layer 60, and Mo (thermal conductivity 138 W / mK) and Cu (thermal conductivity 398 W / mK) for the power supply member 70. The space within the base plate through-hole 34 (including the adhesive reservoir 55) was filled with air (thermal conductivity 0.024 W / mK). In this analysis, the thickness t of the insulating tube upper surface adhesive portion 61 was set to a fixed value of 0.025 mm, and the distance w was set to a fixed value of 0.3 mm. The distance between the lower surface 23 of the ceramic plate 20 and the ceiling surface 32a of the refrigerant flow path 32 was also set to a fixed value of less than 3 mm. As a result of the analysis, as shown in FIG. 6A , when the amount of creeping up of the insulating tube outer peripheral surface adhesive portion 62 increased from 3 mm to 10 mm, the temperature difference changed from approximately 0°C to approximately −1.3°C. At this time, the temperature remained almost constant on the outer periphery cooled by the refrigerant (see FIG. 6B ), regardless of the amount of creeping up of the insulating tube outer peripheral surface adhesive portion 62. However, the temperature changed depending on the amount of creeping up of the insulating tube outer peripheral surface adhesive portion 62 near the base plate through-hole 34, such as directly above the power supply member (see FIG. 6B ).From the above, it was found that the greater the creep-up amount h, the easier it is for heat to be dissipated in the area directly above it, resulting in a lower temperature relative to other areas (e.g., the outer periphery in FIG. 6B ). Therefore, if the creep-up amount h of the insulating tube outer peripheral surface adhesive portion 62 cannot be controlled, the temperature in the area directly above the base plate through-hole 34 will vary from product to product. In contrast, with the wafer mounting table 10, the adhesive fills the adhesive puddle 55 and spreads approximately perpendicular to the up-down direction, thereby suppressing creep-up beyond that point. This allows the amount of creep-up of the insulating tube outer peripheral surface adhesive portion 62 to be controlled, thereby suppressing such variation.

[0030] The wafer mounting table 10 described above has the adhesive reservoir 55 on the outer peripheral surface 50b of the insulating tube 50, which makes it possible to control the amount of creeping up of the insulating tube outer peripheral surface adhesive portion 62. This makes it possible to further suppress variations in temperature between products in the vicinity of the wafer mounting surface 21 directly above the base plate through-hole 34.

[0031] It goes without saying that the present invention is not limited to the first embodiment described above, and can be embodied in various forms as long as they fall within the technical scope of the present invention.

[0032] In the first embodiment described above, the vertical position of the upper end 55a of the adhesive puddle 55 is constant, but it may be variable. The lower the vertical position of the upper end 55a of the adhesive puddle 55, the greater the amount of rise h of the adhesive portion 62 on the outer circumferential surface of the insulating tube. Therefore, the area directly above the upper end 55a is more likely to lose heat and have a lower temperature than other areas. Therefore, by changing the vertical position of the upper end 55a of the adhesive puddle 55 according to the desired heat loss distribution and temperature distribution, the temperature directly above the base plate through hole 34 can be precisely adjusted. Specifically, as shown in FIGS. 7 and 8 , the vertical position of the upper end 55a of the adhesive puddle 55 may vary stepwise or continuously when viewed along the outer periphery of the insulating tube 50. In FIG. 7 , the upper end 55a of the adhesive puddle 55 has two steps 55s, one on the front side and one on the back side of the drawing, and the right side of the step 55s is higher in a stepwise manner than the left side of the drawing. In this case, the amount of creeping up of the adhesive portion 62 on the outer periphery of the insulating tube 50 is smaller on the right side of the page, with the periphery of the step 55s as the boundary, than on the left side. In Figure 8, the upper end 55a of the adhesive reservoir 55 is inclined (continuously changing) so that the right side is higher than the left side when viewed along the outer periphery of the insulating tube 50. In this case, the amount of creeping up of the adhesive portion 62 on the outer periphery of the insulating tube 50 is smaller on the right side of the page than on the left side, depending on the inclination of the upper end 55a when viewed along the outer periphery of the insulating tube 50. Note that in Figures 7 and 8, the same components as in the first embodiment are denoted by the same reference numerals.

[0033] In the first embodiment described above, the adhesive reservoir 55 is a U-shaped groove that opens on the outer surface 50b of the insulating tube 50, but it may also be an L-shaped groove that opens not only on the outer surface 50b of the insulating tube 50 but also on the underside of the insulating tube 50.

[0034] In the first embodiment described above, the power supply member 70 is disposed without a gap in the ceramic plate bottomed hole 24, but the power supply member 70 may be disposed with a gap from the inner peripheral surface of the ceramic plate bottomed hole 24. This also applies to the second embodiment described later.

[0035] In the first embodiment described above, a resin adhesive layer is exemplified as the bonding layer 40, but the present invention is not limited to this. For example, a metal bonding layer may be used as the bonding layer 40. The metal bonding layer can be formed by well-known TCB (thermal compression bonding) using a metal bonding material (for example, an Al-Mg based bonding material or an Al-Si-Mg based bonding material). This also applies to the second embodiment described below.

[0036] In the first embodiment described above, the electrostatic electrode 22 is built into the ceramic plate 20, but this is not particularly limited. For example, a heater electrode (resistive heating element) or a plasma generation electrode (RF electrode) may be built in instead of or in addition to the electrostatic electrode 22. This also applies to the second embodiment described below.

[0037] In the first embodiment described above, the base plate through-holes 34 constitute power supply member insertion holes, but are not limited thereto. For example, the base plate through-holes 34 may constitute lift pin holes or gas holes. The lift pin holes are holes that vertically penetrate the wafer mounting table 10 and are used to insert lift pins that move the wafer W up and down relative to the wafer mounting surface 21. When the wafer W is supported by, for example, three lift pins, three lift pin holes are provided. The gas holes are holes that vertically penetrate the wafer mounting table 10 and are used to supply gas (e.g., He gas) to the wafer mounting surface 21. An example of using the base plate through-holes 34 as part of the gas holes 80 will be described with reference to FIG. 9 . FIG. 9 is a partial enlarged view of another example of the wafer mounting table 10. The gas holes 80 are composed of the base plate through-holes 34, the bonding layer through-holes 44, and the ceramic plate through-holes 84. The ceramic plate through-hole 84 vertically connects the ceramic plate 20 and the electrostatic electrode 22 so as to communicate with the base plate through-hole 34. The electrostatic electrode 22 is not exposed on the inner peripheral surface of the ceramic plate through-hole 84. Note that in FIG. 9, the same components as those in the first embodiment described above are denoted by the same reference numerals. Lift pin holes can be provided in the same manner as the gas holes 80. This also applies to the base plate through-hole 134 of the second embodiment described below.

[0038] In the first embodiment described above, the base plate through-hole 34 has a tapered surface 34c, but it may have a straight shape. This also applies to the base plate through-hole 134 of the second embodiment described later.

[0039] In the first embodiment described above, the central zone Z1 and the peripheral zone Z2, which are bounded by the dashed-dotted circle shown in FIG. 1 , may be adjusted so that one zone has a higher temperature at the wafer mounting surface 21 than the other zone, or so that one zone has a higher heat removal capacity than the other zone. For example, in one of the central zone Z1 and the peripheral zone Z2 shown in FIG. 1 , the ceiling surface 32 a of the refrigerant flow path 32 may be located higher than the other zone. The higher the height of the ceiling surface 32 a of the refrigerant flow path 32 (the closer it is to the wafer mounting surface 21), the lower the temperature of the wafer mounting surface 21 and the higher the heat removal capacity. In such a case, as shown in FIGS. 7 and 8 , an insulating tube 50 in which the upper end 55 a of the adhesive reservoir 55 is positioned vertically may be used to adjust the temperature distribution of the wafer mounting surface 21 to a desired value, including the area immediately above the base plate through-hole 34. An example in which the height of the ceiling surface 32 a of the refrigerant flow path 32 is changed and the upper end 55 a of the adhesive reservoir 55 is positioned vertically accordingly will be described with reference to FIG. 9 . In FIG. 9 , the refrigerant flow path 32 has two flow paths 32H and 32L, each with a different height of the ceiling surface 32a. The flow path 32H is located in the outer peripheral zone Z2, i.e., from the inlet 32in to the midpoint 32m, while the flow path 32L is located in the central zone Z1, i.e., from the midpoint 32m to the outlet 32out ( FIG. 1 ). The height of the ceiling surface 32a around the midpoint 32m of the refrigerant flow path 32 may be inclined from the flow path 32H toward the flow path 32L. The base plate through-hole 34 is provided between adjacent refrigerant flow paths 32. One of the adjacent refrigerant flow paths 32 is the flow path 32H, whose ceiling surface 32a is at a higher position, while the other is the flow path 32L, whose ceiling surface 32a is at a lower position. The adhesive reservoir 55 has the highest upper end 55a in the outer peripheral zone Z2, particularly at a position closest to the flow path 32H, and the lowest upper end 55a in the central zone Z1, particularly at a position closest to the flow path 32L. In this way, in the vicinity of the wafer mounting surface 21 directly above the base plate through-hole 34, the temperature difference due to the difference in height of the ceiling surface 32a of the coolant flow path 32 can be canceled out by the temperature difference due to the difference in height of the upper end 55a of the adhesive reservoir 55, thereby improving thermal uniformity. This point is the same in the second embodiment described later.In the second embodiment, a base plate 130 may be used in which the position of the upper end 135a of the adhesive reservoir 135 is changed in the up-down direction, as shown in FIGS.

[0040] In the first embodiment described above, the refrigerant flow path 32 is formed in a spiral shape, but there are no particular limitations on the shape of the refrigerant flow path 32. In addition, a plurality of refrigerant flow paths 32 may be provided. This also applies to the second embodiment described below.

[0041] In the first embodiment described above, the adhesive layer 60 includes the insulating tube upper surface adhesive portion 61, but the adhesive layer 60 does not have to include the insulating tube upper surface adhesive portion 61. This also applies to the second embodiment described below.

[0042] Second Embodiment A wafer mounting table 110 according to a second embodiment will be described with reference to the drawings. Fig. 10 is a partially enlarged view of the wafer mounting table 110 (a partially enlarged view corresponding to Fig. 3 ), and Fig. 11 is an enlarged perspective cross-sectional view of the periphery of a base plate through-hole 134 of a base plate 130 (an enlarged perspective cross-sectional view of the periphery of the base plate through-hole 134 when the base plate 130 is cut by a plane including the central axis of the base plate through-hole 134). In Figs. 10 and 11 , the same components of the wafer mounting table 110 as those of the wafer mounting table 10 are designated by the same reference numerals, and their description will be omitted.

[0043] The wafer mounting table 110 is an example of a semiconductor manufacturing equipment component of the present invention, and includes a ceramic plate 20, a base plate 130, a bonding layer 40, a base plate through-hole 134, an insulating tube 150, and a power supply member 70.

[0044] The base plate 130 is the same as the base plate 30 except that the shape of the base plate through-hole 134 is different from that of the base plate through-hole 34 .

[0045] The base plate through-hole 134 is a generally cylindrical hole that passes through the base plate 130 in the up-down direction, and is provided so as not to pass through the coolant flow path 32. The base plate through-hole 134 communicates with the bonding layer through-hole 44.

[0046] The insulating tube 150 is housed in the base plate through-hole 134 and the bonding layer through-hole 44. The insulating tube 150 is a substantially cylindrical member made of an electrically insulating material (for example, the same material as the ceramic plate 20), and has an insulating tube through-hole 154 that passes through the insulating tube 150 in the vertical direction along the central axis of the insulating tube 150. The insulating tube 150 is, for example, a cylindrical member with a smooth outer circumferential surface 150b.

[0047] The insulating tube 150 is bonded to the lower surface 23 of the ceramic plate 20 and the inner circumferential surface 134b of the base plate through-hole 134 via an adhesive layer 60. The upper end of the base plate through-hole 134 has a tapered surface 134c with a C-chamfered shape. The adhesive layer 60 has an insulating tube upper surface bonding portion 61 that bonds the lower surface 23 of the ceramic plate 20 to the upper surface 150a of the insulating tube 150, and an insulating tube outer circumferential surface bonding portion 62 that bonds the inner circumferential surface 134b of the base plate through-hole 134 to the outer circumferential surface 150b of the insulating tube 150.

[0048] An adhesive reservoir 135 is provided on the inner circumferential surface 134b of the base plate through-hole 134, at a position a distance x below the underside 23 of the ceramic plate 20. The adhesive reservoir 135 is an annular L-shaped groove that circles the inner periphery of the base plate through-hole 134 and opens to the inner circumferential surface 134b of the base plate through-hole 134 and the underside 134d of the base plate 130. The depth (radial length) u' of the adhesive reservoir 135 is, for example, 0.1 mm or more and 0.5 mm or less. The depth u' of the adhesive reservoir 135 may be at least twice the distance (radial length) w between the inner circumferential surface 134b of the base plate through-hole 134 and the outer circumferential surface 150b of the insulating tube 150. The upper end (upper wall surface) 135a of the adhesive reservoir 135 is preferably positioned lower than the ceiling surface 32a of the refrigerant flow path 32. The inner circumferential surface 134b of the base plate through-hole 134 and the outer circumferential surface 150b of the insulating tube 150 are bonded by an insulating tube outer circumferential surface adhesive portion 62 of the adhesive layer 60. The insulating tube outer circumferential surface adhesive portion 62 is formed from the lower surface 23 of the ceramic plate 20 to partway through the adhesive puddle 135. The distance (vertical length) between the lower surface 23 of the ceramic plate 20 and the lower end of the insulating tube outer circumferential surface adhesive portion 62 is also referred to as the creep-up amount h of the insulating tube outer circumferential surface adhesive portion 62. The larger this creep-up amount h, the more likely the temperature in the area directly above it is to be lower relative to other areas. The value h-x, which is the length of the portion of the insulating tube outer circumferential surface adhesive portion 62 formed in the adhesive puddle 135, is preferably 0.5 mm or less, for example. The value h-x may be greater than 0 mm. The insulating tube upper surface adhesive portion 61 is provided contiguous with the insulating tube outer circumferential surface adhesive portion 62. The thickness t of the insulating tube upper surface adhesive portion 61 is, for example, not less than 0.05 mm and not more than 0.2 mm.

[0049] 10 , the power supply member 70 is inserted into the insulating tube through hole 154 and the ceramic plate blind hole 24, and is electrically connected to the electrostatic electrode 22 exposed at the bottom of the ceramic plate blind hole 24 to supply power to the electrostatic electrode 22. The ceramic plate blind hole 24 has a smaller diameter than the insulating tube through hole 154. The power supply member 70 is electrically insulated from the base plate 130 by insulating tubes 150 arranged in the base plate through hole 134 and the bonding layer through hole 44. The base plate through hole 134, the bonding layer through hole 44, and the ceramic plate blind hole 24 correspond to the power supply member insertion holes of the present invention.

[0050] The manufacturing method of the wafer mounting table 110 may be similar to the manufacturing method of the wafer mounting table 10. In this case, in the description of FIG. 5 , the base plate 30 may be read as the base plate 130, the base plate through-hole 34 as the base plate through-hole 134, the insulating tube 50 as the insulating tube 150, the upper surface 50a as the upper surface 150a, and the outer peripheral surface 50b as the outer peripheral surface 150b.

[0051] The use of the wafer stage 110 is similar to the use of the wafer stage 10, and therefore a description thereof will be omitted here.

[0052] The wafer mounting table 110 described above has the adhesive reservoir 135 on the inner circumferential surface 134b of the base plate through-hole 134, which makes it possible to control the amount of creeping up of the adhesive layer 60. This makes it possible to further suppress variations in the temperature of the wafer mounting surface 21 in the vicinity directly above the base plate through-hole 134 from product to product.

[0053] It goes without saying that the present invention is not limited to the second embodiment described above, and can be embodied in various forms as long as they fall within the technical scope of the present invention.

[0054] In the second embodiment described above, the vertical position of the upper end 135a of the adhesive puddle 135 is constant, but it may be variable. The lower the vertical position of the upper end 135a of the adhesive puddle 135, the greater the amount of creep-up h of the insulating tube outer peripheral surface adhesive portion 62. Therefore, the area directly above the upper end 135a is more likely to lose heat and become lower in temperature relative to other areas. Therefore, by varying the vertical position of the upper end 135a of the adhesive puddle 135 according to the desired heat loss distribution and temperature distribution, the temperature directly above the base plate through hole 34 can be precisely adjusted. Specifically, for example, as shown in FIGS. 12 and 13 , the vertical position of the upper end 135a of the adhesive puddle 135 may vary stepwise or continuously when viewed along the outer periphery of the insulating tube 150. In Figure 12, the upper end 135a of the adhesive pool 135 has two steps 135s, one at the front and one at the back of the page, when viewed along the outer periphery of the insulating tube 150 (the step 135s at the front is not shown), and the right side of the page is gradually higher than the left side of the page, with step 135s as the boundary. In this case, the amount of creeping up of the insulating tube outer peripheral surface adhesive portion 62 is smaller on the right side of the page, with step 135s as the boundary, than on the left side, when viewed along the outer periphery of the insulating tube 150. In Figure 13, the upper end 135a of the adhesive pool 135 is sloped (continuously changing) so that the right side is higher than the left side when viewed along the outer periphery of the insulating tube 150. In this case, the amount of creeping up of the insulating tube outer peripheral surface adhesive portion 62 is smaller on the right side of the page than on the left side, when viewed along the outer periphery of the insulating tube 150, depending on the slope of the upper end 135a. 12 and 13, the same components as those in the first and second embodiments are denoted by the same reference numerals.

[0055] In the second embodiment described above, an adhesive reservoir similar to the adhesive reservoir 55 of the insulating tube 50 may be provided on the outer circumferential surface 150 b of the insulating tube 150 .

[0056] In the second embodiment described above, the adhesive reservoir 135 is an L-shaped groove that opens to the inner surface 134b of the base plate through hole 134 and the underside 134d of the base plate 130, but it may also be a U-shaped groove that opens to the inner surface 134b of the base plate through hole 134.

[0057] The semiconductor manufacturing equipment member of the present invention can be used, for example, in the field of processing wafers with plasma or the like.

[0058] 10 wafer mounting table, 20 ceramic plate, 21 wafer mounting surface, 22 electrostatic electrode, 23 lower surface, 24 ceramic plate bottomed hole, 30 base plate, 32 coolant flow path, 32a ceiling surface, 32H, 32L flow path, 32in inlet, 32out outlet, 32m midway position, 34 base plate through hole, 34b inner peripheral surface, 34c tapered surface, 40 bonding layer, 44 bonding layer through hole, 50 insulating tube, 50a upper surface, 50b outer peripheral surface, 54 insulating tube through hole, 55 adhesive reservoir, 55a upper end, 55s step, 60 adhesive layer, 60x adhesive, 61 insulating tube upper surface adhesive portion, 62 insulating tube outer peripheral surface adhesive portion, 70 power supply member, 80 gas hole, 84 ceramic plate through hole, 110 Wafer mounting table, 130 base plate, 134 base plate through hole, 134b inner peripheral surface, 134c tapered surface, 134d lower surface, 135 adhesive reservoir, 135a upper end, 135s step, 150 insulating tube, 150a upper surface, 150b outer peripheral surface, 154 insulating tube through hole, 210 wafer mounting table, 250 insulating tube, 250a upper surface, 250b outer peripheral surface, Z1 central zone, Z2 outer peripheral zone.

Claims

1. A component for semiconductor manufacturing equipment comprising: a ceramic plate having a wafer mounting surface on an upper surface and incorporating an electrode; a base plate provided on the underside of the ceramic plate; a base plate through hole passing through the base plate in the vertical direction; an insulating tube inserted into the base plate through hole; an adhesive reservoir provided on at least one of the inner surface of the base plate through hole and the outer surface of the insulating tube, the adhesive reservoir being positioned below and away from the upper surface of the insulating tube; and an adhesive layer formed from the underside of the ceramic plate to partway through the adhesive reservoir, the adhesive layer having an insulating tube outer surface adhesive portion that bonds the inner surface of the base plate through hole to the outer surface of the insulating tube.

2. A semiconductor manufacturing equipment member according to claim 1, wherein the adhesive layer has an insulating tube upper surface adhesive portion that is continuous with the insulating tube outer peripheral surface adhesive portion and that bonds the lower surface of the ceramic plate and the upper surface of the insulating tube.

3. A semiconductor manufacturing equipment member according to claim 1 or 2, wherein the vertical position of the upper end of the adhesive pool changes stepwise or continuously when viewed along the outer periphery of the insulating tube.

4. A semiconductor manufacturing equipment component as described in claim 3, wherein the base plate has a built-in refrigerant flow path, the base plate through-hole is provided between adjacent refrigerant flow paths, and one of the adjacent refrigerant flow paths has a higher ceiling surface than the other.

5. A semiconductor manufacturing equipment member according to claim 1 or 2, wherein the base plate through hole constitutes a power supply member insertion hole extending downward from the electrode in the semiconductor manufacturing equipment member and through which a power supply member for supplying power to the electrode is inserted, a lift pin hole which passes through the semiconductor manufacturing equipment member in the vertical direction and through which a lift pin is inserted, or a gas hole which passes through the semiconductor manufacturing equipment member in the vertical direction and through which gas is supplied to the wafer mounting surface.

Images