Sensing device

Abstract

A sensing device, comprising two sensors. A first sensor (1) comprises a first cavity (Q1), a first electrode layer (11), and a first thermal deformation structure (12); the first electrode layer (11) is arranged on the side of the first cavity (Q1) away from an isolation layer (3); the first thermal deformation structure (12) is arranged in the first cavity (Q1) and is in contact with two opposite inner walls of the first cavity (Q1). A second sensor (2) comprises a second cavity (Q2), a second electrode layer (21), and a second thermal deformation structure (22); the second electrode layer (21) is arranged on the side of the isolation layer (3) away from the first cavity; the second thermal deformation structure (22) is arranged in the second cavity (Q2) and is in contact with two opposite inner walls of the second cavity (Q2). This sensing device can measure the temperature and the pressure at the same time, or measure the temperature and the acceleration at the same time, such that a high integration degree, a small size, high measurement precision, and wide application are achieved.

Description

Sensing device Technical Field

[0001] The present application relates to the field of micro-electromechanical systems, and in particular to a sensing device. Background Art

[0002] MEMS (Micro-Electro Mechanical System) sensors are a new type of sensor manufactured using microelectronics and micromachining technologies. In related technologies, MEMS chips can measure physical quantities such as pressure and acceleration.

[0003] However, it is difficult to measure the temperature directly on current MEMS chips. An external temperature sensor, such as a PIN structure temperature sensor, must be used in combination with the MEMS chip to measure the temperature. Since the temperature on the PIN structure temperature sensor and the MEMS chip may be uneven, this leads to a mismatch between the physical quantities (such as pressure, acceleration, etc.) obtained from the MEMS chip test and the temperature values ​​measured by the PIN structure temperature sensor.

[0004] Summary of the Invention

[0005] The embodiments of this application adopt the following technical solutions:

[0006] In a first aspect, an embodiment of the present application provides a sensing device, comprising: an isolation layer and a first sensor and a second sensor respectively located on both sides of the isolation layer, wherein the orthographic projections of the first sensor and the second sensor on the isolation layer overlap;

[0007] The first sensor includes a first cavity, a first electrode layer, and a first thermal deformation structure, wherein the first electrode layer is disposed on a side of the first cavity away from the isolation layer, and the first thermal deformation structure is disposed in the first cavity and in contact with two inner walls opposite to each other of the first cavity;

[0008] The second sensor includes a second cavity, a second electrode layer and a second thermal deformation structure. The second electrode layer is arranged on a side of the isolation layer away from the first cavity. The second thermal deformation structure is arranged in the second cavity and contacts two inner walls opposite to the second cavity.

[0009] In at least one sensing device provided in an embodiment of the present application, under the same external air pressure environment, the first electrode layer is configured to generate a first deflection, and the second electrode layer is configured to generate a second deflection, and the change trends of the first deflection and the second deflection are opposite.

[0010] In at least one sensing device provided in an embodiment of the present application, the first cavity includes a first closed sub-cavity, the second cavity includes a second closed sub-cavity and a first open sub-cavity, and the first open sub-cavity is located on a side of the second closed sub-cavity away from the isolation layer;

[0011] The second thermal deformation structure is disposed in the first open sub-cavity and contacts two opposite inner walls of the first open sub-cavity. The second electrode layer is disposed on a side of the second closed sub-cavity away from the isolation layer.

[0012] In at least one sensing device provided in an embodiment of the present application, the volume of the hollow structure in the first closed sub-cavity is substantially equal to the volume of the hollow structure in the second closed sub-cavity.

[0013] In at least one sensing device provided in an embodiment of the present application, the second electrode layer is disposed between the second closed sub-cavity and the first open sub-cavity;

[0014] Alternatively, the second electrode layer is disposed in the first open sub-cavity on a side close to the second closed sub-cavity.

[0015] In at least one sensing device provided in an embodiment of the present application, the first cavity includes a second open sub-cavity, the second cavity includes a third open sub-cavity and a fourth open sub-cavity, and the third open sub-cavity is arranged on a side of the fourth open sub-cavity away from the isolation layer;

[0016] The second thermal deformation structure is arranged in the third open sub-cavity and contacts two opposite inner walls of the third open sub-cavity, and the second electrode layer is arranged in the third open sub-cavity on one side close to the fourth open sub-cavity and contacts the second thermal deformation structure.

[0017] In at least one sensor device provided in an embodiment of the present application, the sensor device further includes a common electrode layer, a first insulating layer, and a second insulating layer; the first insulating layer is located on a side of the common electrode layer close to the first cavity, and the second insulating layer is located between the common electrode layer and the insulating layer;

[0018] The common electrode layer is disposed between the first cavity and the second cavity. The first electrode layer and the common electrode layer serve as two electrodes of a first capacitor, respectively. The second electrode layer and the common electrode layer serve as two electrodes of a second capacitor, respectively.

[0019] In at least one sensing device provided in an embodiment of the present application, the first sensor further includes a first supporting portion, a third insulating layer and a fourth insulating layer, the first supporting portion is located between the first insulating layer and the third insulating layer and is arranged around the first cavity, the fourth insulating layer covers the first electrode layer, and the first thermal deformation structure is in direct contact with the first insulating layer and the third insulating layer, respectively.

[0020] In at least one sensing device provided in an embodiment of the present application, when the first cavity includes a first closed sub-cavity, and the second cavity includes a second closed sub-cavity and a first open sub-cavity, the second thermal deformation structure is disposed in the first open sub-cavity and contacts two inner walls opposite to the first open sub-cavity;

[0021] The second sensor further includes a fifth insulating layer, a sixth insulating layer, a seventh insulating layer, a second supporting portion, and a third supporting portion, wherein the second supporting portion is located between the fifth insulating layer and the sixth insulating layer and is disposed around the second closed sub-cavity, the third supporting portion is located between the second electrode layer and the seventh insulating layer and is disposed around the first open sub-cavity, and the second electrode layer is disposed within the first open sub-cavity and on a side of the sixth insulating layer away from the second closed sub-cavity;

[0022] The second thermal deformation structure is in direct contact with the second electrode layer and the seventh insulating layer respectively. A plurality of first through holes are provided on the seventh insulating layer. The orthographic projection of the second thermal deformation structure on the isolation layer and the area enclosed by the orthographic projection of the outer contour of the first through hole on the isolation layer do not overlap with each other.

[0023] In at least one sensing device provided in an embodiment of the present application, when the first cavity includes a second open sub-cavity, and the second cavity includes a third open sub-cavity and a fourth open sub-cavity, the second thermal deformation structure is disposed in the third open sub-cavity and contacts two opposite inner walls of the third open sub-cavity;

[0024] The second sensor further includes a fifth insulating layer, a sixth insulating layer, a seventh insulating layer, a second supporting portion, and a third supporting portion, wherein the second supporting portion is located between the fifth insulating layer and the sixth insulating layer and is disposed around the fourth open sub-cavity, the third supporting portion is located between the second electrode layer and the seventh insulating layer and is disposed around the third open sub-cavity, and the second electrode layer is disposed in the third open sub-cavity and on a side of the sixth insulating layer away from the fourth open sub-cavity;

[0025] The second thermal deformation structure is in direct contact with the second electrode layer and the seventh insulating layer respectively, a plurality of first through holes are provided on the seventh insulating layer, a plurality of second through holes are provided on the sixth insulating layer, and the second through holes pass through the second electrode layer, and the orthographic projection of the second thermal deformation structure on the isolation layer does not overlap with the area enclosed by the orthographic projection of the outer contour of the first through holes and the outer contour of the second through holes on the isolation layer.

[0026] In at least one sensing device provided in an embodiment of the present application, the first sensor includes a plurality of third through holes, and the third through holes sequentially penetrate the fourth insulating layer, the first electrode layer and the third insulating layer, and the area enclosed by the orthographic projection of the first thermal deformation structure on the isolation layer and the orthographic projection of the outer contour of the third through hole on the isolation layer do not overlap with each other.

[0027] In at least one sensing device provided in an embodiment of the present application, the first sensor further includes a first detection structure;

[0028] The first sensor further includes a first insulating layer, a first supporting portion, a third insulating layer, and a fourth insulating layer, wherein the first insulating layer is located on a side of the isolation layer close to the first enclosed sub-cavity, the first supporting portion is located between the first insulating layer and the third insulating layer and is disposed around the first enclosed sub-cavity, the fourth insulating layer covers the first electrode layer, and the first thermally deformable structure is in direct contact with the first insulating layer and the third insulating layer, respectively;

[0029] The first detection structure is located on a side of the first electrode layer away from the first closed sub-cavity, and an orthographic projection of the first detection structure on the isolation layer does not overlap with an orthographic projection of the first thermal deformation structure on the isolation layer.

[0030] In at least one sensing device provided in an embodiment of the present application, the second sensor further includes a second detection structure;

[0031] The second sensor further includes a fifth insulating layer, a sixth insulating layer, a seventh insulating layer, a second supporting portion, and a third supporting portion, the second supporting portion being located between the fifth insulating layer and the sixth insulating layer and disposed around the second closed sub-cavity, the third supporting portion being located between the second electrode layer and the seventh insulating layer and disposed around the first open sub-cavity, the second electrode layer being disposed within the first open sub-cavity and on a side of the sixth insulating layer away from the second closed sub-cavity, and the second thermally deformable structure being in direct contact with the second electrode layer and the seventh insulating layer, respectively;

[0032] The second detection structure is disposed in the first open sub-cavity and contacts the second electrode layer, and an orthographic projection of the second detection structure on the isolation layer does not overlap with an orthographic projection of the second thermal deformation structure on the isolation layer.

[0033] In at least one sensing device provided by an embodiment of the present application, the second parameter includes pressure.

[0034] In at least one sensing device provided in an embodiment of the present application, the first cavity includes a third closed sub-cavity, and the second cavity includes a fourth closed sub-cavity;

[0035] The first electrode layer is located on a side of the third closed sub-cavity away from the isolation layer, and the second electrode layer is located on a side of the fourth closed sub-cavity away from the isolation layer.

[0036] In at least one sensing device provided in an embodiment of the present application, the first sensor further includes a first insulating layer, a third insulating layer, a fourth insulating layer, and a first supporting portion, wherein the first insulating layer covers the isolation layer, the first supporting portion is located between the first insulating layer and the third insulating layer and is disposed around the third enclosed sub-cavity; the first thermally deformable structure contacts the first insulating layer and the third insulating layer, respectively, and the fourth insulating layer is located on a side of the first electrode layer away from the third insulating layer;

[0037] The second sensor also includes a fifth insulating layer, a sixth insulating layer, a seventh insulating layer and a second supporting portion, the isolation layer covers the fifth insulating layer, the second supporting portion is located between the fifth insulating layer and the sixth insulating layer, and is arranged around the fourth closed sub-cavity; the second thermal deformation structure contacts the fifth insulating layer and the sixth insulating layer respectively, and the second electrode layer is located between the sixth insulating layer and the seventh insulating layer.

[0038] In at least one sensing device provided in an embodiment of the present application, the first sensor further includes a first sliding electrode, the first sliding electrode being disposed within the third enclosed sub-cavity and overlapping with an orthographic projection of the first electrode layer on the isolation layer, the first sliding electrode being configured to slide along a first direction, the first direction being a direction perpendicular to a plane on which the isolation layer is located;

[0039] The second sensor further includes a second sliding electrode, which is disposed in the fourth closed sub-cavity and overlaps with the orthographic projection of the second electrode layer on the isolation layer. The first sliding electrode and the second sliding electrode have the same sliding direction.

[0040] In at least one sensing device provided in an embodiment of the present application, an orthographic projection of the first sliding electrode on the isolation layer and an orthographic projection of the first thermally deformable structure on the isolation layer do not overlap with each other, and an orthographic projection of the second sliding electrode on the isolation layer and an orthographic projection of the second thermally deformable structure on the isolation layer do not overlap with each other;

[0041] The first sliding electrode and the second sliding electrode each include a mass block and at least one extended electrode, the mass block and the extended electrode are connected, the orthographic projection of the extended electrode on the isolation layer overlaps with the orthographic projection of the first electrode layer or the second electrode layer on the isolation layer, the mass block of the first sliding electrode is slidably connected to the first supporting portion, and the mass block of the second sliding electrode is slidably connected to the second supporting portion.

[0042] In at least one sensing device provided in an embodiment of the present application, the second cavity further includes a fifth open sub-cavity, and the fifth open sub-cavity is located on a side of the fourth closed sub-cavity away from the isolation layer;

[0043] The first sensor further includes a first insulating layer, a third insulating layer, a fourth insulating layer, and a first supporting portion, wherein the first insulating layer covers the isolation layer, the first supporting portion is located between the first insulating layer and the third insulating layer and is disposed around the third enclosed sub-cavity; the first thermal deformation structure contacts the first insulating layer and the third insulating layer respectively, and the fourth insulating layer is located on a side of the first electrode layer away from the third insulating layer;

[0044] The second sensor also includes a fifth insulating layer, a sixth insulating layer, a seventh insulating layer, a second supporting portion and a third supporting portion. The isolation layer covers the fifth insulating layer. The second supporting portion is located between the fifth insulating layer and the sixth insulating layer and is arranged around the fourth closed sub-cavity. The second electrode layer is located in the fifth open sub-cavity and contacts the sixth insulating layer. The third supporting portion is located between the second electrode layer and the seventh insulating layer and is arranged around the fifth open sub-cavity. The second thermal deformation structure is located in the fifth open sub-cavity and contacts the second electrode layer and the seventh insulating layer.

[0045] In at least one sensing device provided in an embodiment of the present application, the first sensor includes a first sliding electrode, the first sliding electrode being disposed within the third enclosed sub-cavity and overlapping with an orthographic projection of the first electrode layer on the isolation layer, the first sliding electrode being configured to slide along a first direction, the first direction being a direction parallel to a plane on which the isolation layer is located;

[0046] The second sensor further includes a second sliding electrode, which is disposed in the fourth closed sub-cavity and overlaps with the orthographic projection of the second electrode layer on the isolation layer. The first sliding electrode and the second sliding electrode have the same sliding direction.

[0047] In at least one sensing device provided in an embodiment of the present application, an orthographic projection of the first sliding electrode on the isolation layer and an orthographic projection of the first thermally deformable structure on the isolation layer do not overlap with each other, and an orthographic projection of the second sliding electrode on the isolation layer and an orthographic projection of the second thermally deformable structure on the isolation layer do not overlap with each other;

[0048] The first sliding electrode and the second sliding electrode each include a mass block and at least one extended electrode, the mass block and the extended electrode are connected, the orthographic projection of the extended electrode on the isolation layer overlaps with the orthographic projection of the first electrode layer or the second electrode layer on the isolation layer, the mass block of the first sliding electrode is slidingly connected to the first insulating layer, and the mass block of the second sliding electrode is slidingly connected to the sixth insulating layer; a plurality of first through holes are provided on the seventh insulating layer, and the orthographic projection of the second thermal deformation structure on the isolation layer and the area enclosed by the orthographic projection of the outer contour of the first through hole on the isolation layer do not overlap with each other.

[0049] In at least one sensing device provided by an embodiment of the present application, the first sliding electrode and the second sliding electrode are the same;

[0050] In the case where the first direction is a direction perpendicular to the plane where the isolation layer is located, the size of the mass block in the direction perpendicular to the plane where the isolation layer is located is smaller than the size of the cavity where the mass block is located in the direction perpendicular to the plane where the isolation layer is located;

[0051] In the first direction parallel to the plane of the isolation layer, the dimensions of the first sliding electrode and the second sliding electrode in the direction parallel to the plane of the isolation layer are both smaller than the dimensions of the cavity in which they are located in the direction parallel to the plane of the isolation layer.

[0052] In at least one sensing device provided in an embodiment of the present application, the first sensor further includes a third detection structure, the third detection structure being disposed on a side of the first electrode layer away from the third enclosed sub-cavity, and an orthographic projection of the third detection structure on the isolation layer and an orthographic projection of the first thermal deformation structure on the isolation layer not overlapping each other;

[0053] The second sensor also includes a fourth detection structure, which is arranged on a side of the second electrode layer away from the fourth closed sub-cavity, and the orthographic projection of the fourth detection structure on the isolation layer and the orthographic projection of the second thermal deformation structure on the isolation layer do not overlap with each other; the orthographic projections of the third detection structure and the fourth detection structure on the isolation layer overlap.

[0054] In at least one sensing device provided by an embodiment of the present application, the second parameter includes acceleration.

[0055] In at least one sensing device provided in an embodiment of the present application, the first thermal deformation structure and the second thermal deformation structure are made of the same material and structure.

[0056] In at least one sensing device provided by an embodiment of the present application, the orthographic projections of the first thermal deformation structure and the second thermal deformation structure on the isolation layer overlap.

[0057] In at least one sensing device provided in an embodiment of the present application, the first thermal deformation structure and the second thermal deformation structure each include a plurality of thermal deformation patterns, and the distance between any two adjacent thermal deformation patterns is equal.

[0058] In at least one sensing device provided in an embodiment of the present application, the material of the first thermal deformation structure and the second thermal deformation structure includes a thermoelastic material.

[0059] In at least one sensing device provided by an embodiment of the present application, the second sensor is embedded in a substrate, and the isolation layer covers the substrate.

[0060] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0061] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following briefly introduces the drawings required for use in the embodiments or descriptions of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0062] FIG1 is a schematic structural diagram of a sensor device in a related art provided by an embodiment of the present application;

[0063] 2 to 9 are schematic structural diagrams of eight sensing devices for simultaneously measuring temperature and pressure provided in embodiments of the present application;

[0064] 10A to 13 are schematic structural diagrams of six sensor devices for simultaneously measuring temperature and acceleration provided in embodiments of the present application;

[0065] 14 and 15 are schematic top views of the sliding electrodes provided in an embodiment of the present application, wherein the sliding electrodes include a first sliding electrode and a second sliding electrode;

[0066] FIG16 is a schematic top view of a thermal deformation structure provided in an embodiment of the present application; wherein the thermal deformation structure includes a first thermal deformation structure and a thermal deformation structure;

[0067] 17 to 25 are schematic diagrams of intermediate structures of a manufacturing process of a sensor device provided in an embodiment of the present application. Specific embodiments

[0068] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0069] In the embodiments of the present application, words such as "first", "second", "third", and "fourth" are used to distinguish between identical or similar items with basically the same functions and effects. This is only for the purpose of clearly describing the technical solutions of the embodiments of the present application, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features.

[0070] In the embodiments of the present application, the terms "upper" and "lower" indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0071] Throughout the specification, terms such as "one embodiment," "some embodiments," "exemplary embodiment," "example," "specific example," or "some examples" are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of the present application. Schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be included in any one or more embodiments or examples in any suitable manner.

[0072] In the embodiments of the present application, “a plurality of” means two or more, and “at least one” means one or more, unless otherwise clearly defined.

[0073] The features "parallel," "perpendicular," and "identical" used in the embodiments of the present application include features such as "parallel," "perpendicular," and "identical" in the strict sense, as well as "approximately parallel," "approximately perpendicular," and "approximately identical" that include certain tolerances, taking into account the measurement and tolerances associated with the measurement of a particular quantity (e.g., limitations of the measurement system), and represent within an acceptable range of deviation for a particular value determined by a person of ordinary skill in the art. For example, "approximately" can mean within one or more standard deviations, or within 10% or 5% of the stated value.

[0074] Unless the context requires otherwise, throughout the specification and claims, the term "comprising" is to be construed in an open, inclusive sense, that is, meaning "including, but not limited to."

[0075] In the embodiments of this application, "same layer" refers to the relationship between multiple film layers formed from the same material after the same step (e.g., a one-step patterning process). "Same layer" here does not always mean that the thickness of multiple film layers is the same or the height of multiple film layers in the cross-sectional view is the same. Polygons in this specification are not strictly defined and can be approximate triangles, parallelograms, trapezoids, pentagons, or hexagons, etc., and some small deformations due to tolerances may exist.

[0076] In related technologies, MEMS (Micro-Electro Mechanical System) chips can measure physical quantities such as pressure and acceleration. However, it is difficult for current MEMS chips to directly measure temperature. Temperature measurement requires the use of an external temperature sensor (such as the PIN structure temperature sensor shown in Figure 1) combined with the MEMS chip. Due to the different positions of the external temperature sensor and the MEMS chip (such as the MEMS pressure sensor), the temperature on the PIN structure temperature sensor and the MEMS chip may be uneven. This leads to a mismatch between the physical quantities (such as pressure and acceleration) measured by the MEMS chip and the temperature values ​​measured by the PIN structure temperature sensor.

[0077] Figure 1 shows a schematic structural diagram of a sensing device in the related art, which includes a pressure sensor A1 and a temperature sensor A2, wherein the pressure sensor A1 includes insulating layers 101, 103, 104 and 106, a first electrode 102, a second electrode 105 and a pressure reference cavity (not marked) located on a substrate 100, wherein the pressure-sensitive film includes a partial area of ​​the insulating layer 104, a partial area of ​​the second electrode 105 and a partial area of ​​the insulating layer 106. When external pressure is generated, the pressure-sensitive film deforms. Within a certain range, the deformation of the pressure-sensitive film is approximately proportional to the pressure applied by the external environment. Usually, a piezoresistor is provided on the pressure-sensitive film, and the piezoresistor is electrically connected to the second electrode 105 and an external electrode (for example, DJ1) respectively, so that the pressure signal is converted into an electrical signal; the temperature sensor A2 includes two electrodes DJ3 and DJ4 and a PIN structure located between the two electrodes. When the temperature changes, the current in the PIN structure changes and is transmitted to the outside through the electrodes, so that the temperature signal is converted into an electrical signal. However, the pressure sensor A1 and temperature sensor A2 shown in FIG1 are located on different substrates 100. Therefore, the temperatures they experience may differ under external conditions. This may result in the pressure measured by pressure sensor A1 and the temperature measured by temperature sensor A2 not being at the same point, leading to mismatched data.

[0078] In addition, the MEMS sensor in the related art may include a MEMS chip and an ASIC (Application Specific Integrated Circuit) chip. The ASIC chip is mainly responsible for precision compensation and correction of the measurement results of the MEMS chip; however, there is a difference between the actual temperature compensation point of the ASIC chip (compensation based on the temperature point of the MEMS chip) and the actual measurement point of the external temperature sensor, resulting in inaccurate compensation of the ASIC chip.

[0079] Based on this, an embodiment of the present application provides a sensing device, in which two sensors are provided, the first sensor including a first cavity, a first electrode layer and a first thermal deformation structure, the first electrode layer being arranged on the side of the first cavity away from the isolation layer, and the first thermal deformation structure being arranged in the first cavity and on the two inner walls opposite to the first cavity; the second sensor including a second cavity, a second electrode layer and a second thermal deformation structure, the second electrode layer being arranged on the side of the isolation layer away from the first cavity, and the second thermal deformation structure being arranged in the second cavity and in contact with the two inner walls opposite to the second cavity; in this way, the correlation value of the first parameter can be obtained through the electrode layer and the cavity (first cavity or second cavity) in the two sensors, and the correlation value of the second parameter can be obtained through the thermal deformation structure (first thermal deformation structure and second thermal deformation structure) and the cavity (first cavity or second cavity) in the two sensors, and then the first parameter and the second parameter are calculated through the correlation value of the first parameter and the correlation value of the second parameter.

[0080] In the sensing device provided in the embodiment of the present application, since the electrodes, cavity, and thermal deformation structure are integrated into the same sensor, the same sensor can simultaneously obtain the correlation value of the first parameter and the correlation value of the second parameter (temperature), thereby avoiding the problem that the pressure measured by the pressure sensor A1 and the temperature measured by the temperature sensor A2 in the related art as shown in Figure 1 may not be the values ​​of the same point, and the data of the two may not match. In addition, the sensing device provided in the embodiment of the present application has high integration, small size, high detection accuracy, and wide application.

[0081] Example embodiments will now be described more fully with reference to the accompanying drawings.

[0082] An embodiment of the present application provides a sensing device, as shown in FIG2 to FIG13 , comprising: an isolation layer 3 and a first sensor 1 and a second sensor 2 located on either side of the isolation layer 3 , wherein the orthographic projections of the first sensor 1 and the second sensor 2 on the isolation layer 3 overlap;

[0083] The first sensor 1 includes a first cavity Q1, a first electrode layer 11, and a first thermal deformation structure 12. The first electrode layer 11 is arranged on a side of the first cavity Q1 away from the isolation layer 3. The first thermal deformation structure 12 is arranged in the first cavity Q1 and contacts two opposite inner walls of the first cavity Q1.

[0084] The second sensor 2 includes a second cavity Q2, a second electrode layer 21, and a second thermal deformation structure 22. The second electrode layer 21 is provided on a side of the isolation layer 3 away from the first cavity Q1. The second thermal deformation structure 22 is provided in the second cavity Q2 and contacts two opposite inner walls of the second cavity Q2.

[0085] The first sensor 1 and the second sensor 2 are configured to jointly measure a first parameter and a second parameter, where the first parameter includes the ambient temperature.

[0086] The isolation layer 3 can be used to isolate temperature to avoid temperature interference between the first sensor 1 and the second sensor 2 .

[0087] In some embodiments, one of the first sensor 1 and the second sensor 2 may be embedded in the substrate 10 , for example, the second sensor 2 may be embedded in the substrate 10 .

[0088] The material of the substrate 10 in the above-mentioned sensing device is not limited here. For example, the material of the above-mentioned substrate 10 can be an inorganic material, such as one of glass, silicon nitride, silicon oxide, silicon oxynitride and silicon material; or, the material of the above-mentioned substrate 10 can be an organic material with a certain mechanical strength, such as resin or engineering plastic.

[0089] The silicon material may include single crystal silicon, polycrystalline silicon, amorphous silicon, and doped silicon.

[0090] Exemplarily, the material of the substrate 10 may be N-type silicon, or the material of the substrate may be P-type silicon.

[0091] For example, when the material of the substrate 10 includes silicon material, the isolation layer 3 can also be used to isolate carriers in the substrate 10 to avoid signal crosstalk caused by carrier migration on both sides of the isolation layer 3.

[0092] Exemplarily, the material of the isolation layer 3 may be an insulating material, such as an organic insulating material or an inorganic insulating material.

[0093] The above-mentioned first cavity Q1 and second cavity Q2 are both hollow structures, wherein the first cavity Q1 (second cavity Q2) can be in a vacuum state; or, the first cavity Q1 (second cavity Q2) can be filled with gas. The specific type of gas filled in the hollow structure is not limited here and can be determined according to actual conditions.

[0094] For example, the vacuum states of the first cavity Q1 and the second cavity Q2 are not necessarily the same.

[0095] In an exemplary embodiment, the orthographic projection areas of the first electrode layer 11 and the second electrode layer 21 on the isolation layer 3 are the same, and the thicknesses of the first electrode layer 11 and the second electrode layer 21 are substantially the same.

[0096] In an exemplary embodiment, the orthographic projection areas of the first thermal deformation structure 12 and the second thermal deformation structure 22 on the isolation layer 3 are the same, and the heights of the first thermal deformation structure 12 and the second thermal deformation structure 22 in a direction perpendicular to the plane of the isolation layer 3 are approximately the same.

[0097] In an exemplary embodiment, the second parameter may include pressure (relative pressure and absolute pressure) or acceleration.

[0098] For example, the first sensor 1 and the second sensor 2 are configured to measure pressure and temperature together, wherein the pressure may include air pressure.

[0099] For another example, the first sensor 1 and the second sensor 2 are configured to jointly measure acceleration and temperature.

[0100] In an exemplary embodiment, the orthographic projections of the first thermally deformed structure 12 and the second thermally deformed structure 22 on the isolation layer 3 overlap.

[0101] The shapes and sizes of the orthographic projections of the first thermal deformation structure 12 and the second thermal deformation structure 22 on the isolation layer 3 are the same.

[0102] The shapes of the orthographic projections of the first and second thermally deformable structures 12 and 22 on the isolation layer 3 are not limited herein. For example, the shapes of the orthographic projections of the first and second thermally deformable structures 12 and 22 on the isolation layer 3 can both be polygonal, such as a quadrilateral or pentagon; or the shapes of the orthographic projections of the first and second thermally deformable structures 12 and 22 on the isolation layer 3 can both be arc-shaped, such as a circle or an ellipse; or the shapes of the orthographic projections of the first and second thermally deformable structures 12 and 22 on the isolation layer 3 can both be a combination of a polygon and an arc; wherein the combination of a polygon and an arc refers to an image formed by splicing polygons and arcs or a shape formed by removing a local area from a polygon or arc.

[0103] In an exemplary embodiment, the first thermal deformation structure 12 and the second thermal deformation structure 22 may each include multiple thermal deformation patterns, and the multiple thermal deformation patterns are distributed in the cavity structure and contact two opposing inner walls of the cavity structure in which they are located. The term "multiple" refers to at least two.

[0104] In practical applications, the first and second thermally deformable structures 12 and 22 can undergo thermal deformation (or thermal expansion) when the temperature rises, causing the first and second thermally deformable structures 12 and 22 to increase in height perpendicular to the plane of the isolation layer 3. For sensing devices such as those shown in Figures 2, 3, 4, 8, 9, 10A, and 10B, since the first electrode layer 11 serves as one electrode of a capacitor structure (the other electrode of the capacitor is described in detail below), and the second electrode layer 21 serves as one electrode of another capacitor structure (the other electrode of the capacitor is described in detail below), the increase in height of the first and second thermally deformable structures 12 and 22 perpendicular to the plane of the isolation layer 3 changes the distance between the two electrodes of the capacitor, thereby changing the capacitance of the capacitor. The change in capacitance can be used to calculate the change in temperature, thereby achieving temperature detection through the first and second thermally deformable structures 12 and 22. It should be noted that only the temperature measuring function of the first thermal deformation structure 12 and the second thermal deformation structure 22 is briefly described here. The specific working principles of the sensing devices shown in Figures 2, 3, 4, 8, 9, 10A and 10B will be described below in conjunction with the structure of the specific sensing devices.

[0105] In addition, for sensing devices such as those shown in Figures 5, 6, 7, 12, and 13, since one sensing structure is provided on the first electrode layer 11 and another sensing structure is provided on the second electrode layer 21, wherein the sensing structures are made of a piezoelectric material or a piezoresistive material, when the temperature of the first and second thermally deformable structures 12, 22 rises, the heights of the first and second thermally deformable structures 12, 22 increase in a direction perpendicular to the plane of the isolation layer 3, causing the sensing structures to deform under the action of pressure. This deformation causes a change in the current flowing through the sensing structures, and the change in current can be used to calculate the change in temperature, thereby achieving temperature detection through the first and second thermally deformable structures 12, 22. It should be noted that only the temperature measurement function of the first and second thermally deformable structures 12, 22 is briefly described here. The specific operating principles of the sensing devices shown in Figures 5, 6, 7, 12, and 13 will be described below in conjunction with the specific structures of the sensing devices.

[0106] In the sensing device provided in the embodiment of the present application, the correlation value of the first parameter can be obtained through the electrode layer and the cavity (the first cavity or the second cavity) in the two sensors, and the correlation value of the second parameter can be obtained through the thermal deformation structure (the first thermal deformation structure 12 and the second thermal deformation structure 22) and the cavity (the first cavity or the second cavity) in the two sensors, and then the first parameter and the second parameter are calculated through the correlation value of the first parameter and the correlation value of the second parameter.

[0107] Because the electrodes, cavity, and thermal deformation structure are integrated into the same sensor, the same sensor can simultaneously obtain the correlation value of the first parameter and the correlation value of the second parameter (temperature). This avoids the problem in the related art shown in Figure 1 where the pressure measured by pressure sensor A1 and the temperature measured by temperature sensor A2 may not be the same value at the same point, resulting in mismatched data. In addition, the sensing device provided by the embodiments of the present application has high integration, small size, high detection accuracy, and wide application.

[0108] In at least one sensing device provided in an embodiment of the present application, for the sensing device shown in Figures 2 to 9, under the same external air pressure environment, the first electrode layer 11 generates a first deflection, and the second electrode layer 21 generates a second deflection, and the change trends of the first deflection and the second deflection are opposite.

[0109] In an exemplary embodiment, taking Figure 2 as an example, the three membrane layers on the upper side of the first cavity Q1 in the first sensor 1 together form a first vibration membrane, and the second electrode layer 21 in the second sensor 2 and the sixth insulating layer IS6 in direct contact with the second electrode layer 21 together form a second vibration membrane. During the test of the sensing device, both the first vibration membrane and the second vibration membrane are deformed.

[0110] In an exemplary embodiment, the sensing device shown in Figures 2 to 9 is a sensing device for measuring temperature and pressure (air pressure). When external pressure is applied, the arrow direction marked in Figure 2 is used as an example, where the arrow direction refers to the force direction of the first vibrating membrane and the second vibrating membrane under the action of air pressure. Under the action of external air pressure, for the first sensor 1 on the upper side of the isolation layer 3, its first vibrating membrane deforms in the vertical downward direction; for the second sensor 2 on the upper side of the isolation layer 3, its second vibrating membrane deforms in the vertical upward direction. At this time, the first electrode layer 11 and the second electrode layer 21 both produce a change in deflection in a direction perpendicular to the plane of the isolation layer 3. Specifically, the first electrode layer 11 produces a change in deflection in the vertical downward direction, and the second electrode layer 21 produces a change in deflection in the vertical upward direction. The directions of the deflections of the first electrode layer 11 and the second electrode layer 21 under the action of external air pressure are opposite.

[0111] Deflection refers to the linear displacement of the rod axis in a direction perpendicular to the axis, or the linear displacement of the mid-plane of the plate or shell in a direction perpendicular to the mid-plane, when subjected to force. Here, deflection refers to the linear displacement of either the first electrode layer 11 or the second electrode layer 21 in a direction perpendicular to the plane of the isolation layer 3. In layman's terms, this means that the first electrode layer 11 deforms vertically downward, while the second electrode layer 21 deforms vertically upward.

[0112] In at least one sensing device provided in an embodiment of the present application, as shown in Figures 2, 3, 4, 5, 6, and 7, the first cavity Q1 includes a first closed sub-cavity F1, and the second cavity Q2 includes a second closed sub-cavity F2 and a first open sub-cavity K1. The first open sub-cavity K1 is located on a side of the second closed sub-cavity F2 away from the isolation layer 3.

[0113] The second thermal deformation structure 22 is disposed in the first open sub-cavity K1 and contacts two inner walls opposite to the first open sub-cavity K1 . The second electrode layer 21 is disposed on a side of the second closed sub-cavity F2 away from the isolation layer 3 .

[0114] In an exemplary embodiment, an open sub-cavity refers to a cavity structure in an open state, and a closed sub-cavity refers to a cavity structure in a closed state, wherein the open sub-cavity can be connected to the external atmospheric pressure, and the closed sub-cavity can be in a vacuum state or a gas-filled state.

[0115] It should be noted that, for the sensing devices shown in FIG2 to FIG7 , the first closed sub-cavity F1 and the second closed sub-cavity F2 have the same size and state;

[0116] For example, the first closed sub-cavity F1 and the second closed sub-cavity F2 are both in a vacuum state or in a gas-filled state.

[0117] For another example, the volume of the hollow structure in the first enclosed sub-cavity F1 is approximately equal to the volume of the hollow structure in the second enclosed sub-cavity F2. Specifically, since the first enclosed sub-cavity F1 is provided with the first thermal deformation structure 12, the space in the first enclosed sub-cavity F1 other than the first thermal deformation structure 12 is a hollow structure. The volume of the space in the first enclosed sub-cavity F1 other than the first thermal deformation structure 12 is approximately the same as the volume of the hollow structure in the second enclosed sub-cavity F2. In this case, the area enclosed by the orthographic projection of the outer contour of the first enclosed sub-cavity F1 on the isolation layer 3 can be larger than the area enclosed by the orthographic projection of the outer contour of the second enclosed sub-cavity F2 on the isolation layer 3.

[0118] When the first cavity Q1 includes the first closed sub-cavity F1 and the second cavity Q2 includes the second closed sub-cavity F2 and the first open sub-cavity K1, the effective reference cavity in the first sensor 1 is the first closed sub-cavity F1, and the effective reference cavity in the second sensor 2 is the second closed sub-cavity F2. Therefore, in order to improve the measurement accuracy, the membrane layer structure surrounding the first closed sub-cavity F1 and the membrane layer structure surrounding the second closed sub-cavity F2 are arranged as symmetrically as possible.

[0119] In at least one sensing device provided by an embodiment of the present application, as shown in FIG4 and FIG7 , the second electrode layer 21 is disposed between the second closed sub-cavity F2 and the first open sub-cavity K1;

[0120] Alternatively, as shown in FIG. 2 , FIG. 3 , FIG. 5 and FIG. 6 , the second electrode layer 21 is disposed on a side of the first open sub-cavity K1 close to the second closed sub-cavity F2 .

[0121] In practical applications, as shown in Figures 4 and 7, the second electrode layer 21 can be arranged between the second closed sub-cavity F2 and the first open sub-cavity K1, so that the structures of the membrane layer that bears pressure on the upper side of the first closed sub-cavity F1 and the membrane layer that bears pressure on the lower side of the second closed sub-cavity F2 are as symmetrical as possible, so as to further reduce the measurement error between the first sensor 1 and the second sensor 2 in the sensing device and improve the measurement accuracy of the sensing device.

[0122] It should be noted that when the volume of the space excluding the first thermal deformation structure 12 in the first closed sub-cavity F1 and the volume of the cavity structure in the second closed sub-cavity F2 are set to be approximately the same, the difference in detection accuracy between the sensing structure shown in Figures 4 and 7 and the sensing structure shown in Figures 2, 3, 5 and 6 is almost negligible.

[0123] In at least one sensing device provided in an embodiment of the present application, as shown in FIG8 and FIG9 , the first cavity Q1 includes a second open sub-cavity K2, the second cavity Q2 includes a third open sub-cavity K3 and a fourth open sub-cavity K4, and the third open sub-cavity K3 is disposed on a side of the fourth open sub-cavity K4 away from the isolation layer 3;

[0124] The second thermal deformation structure 22 is arranged in the third open sub-cavity K3 and contacts the two opposite inner walls of the third open sub-cavity K3. The second electrode layer 21 is arranged in the third open sub-cavity K3 on one side close to the fourth open sub-cavity K4 and contacts the second thermal deformation structure 22.

[0125] In an exemplary embodiment, the volumes of the cavity structures in the second open sub-cavity K2 and the fourth open sub-cavity K4 are substantially the same; wherein the cavity structure in the second open sub-cavity K2 refers to the space in the second open sub-cavity K2 excluding the first thermal deformation structure 12 .

[0126] For the sensing device shown in Figures 8 and 9, its three sub-cavities are all connected to the external atmospheric pressure. The sensing device can be used to detect changes in the absolute pressure of the sensing device caused by external sound waves, thereby obtaining the frequency range of the sound wave based on the change in absolute pressure.

[0127] In at least one sensor device provided in an embodiment of the present application, as shown in FIG2 , FIG3 , FIG4 , FIG8 , and FIG9 , the sensor device further includes a common electrode layer 4 , a first insulating layer IS1 , and a second insulating layer IS2 ; the first insulating layer IS1 is located on a side of the common electrode layer 4 close to the first cavity Q1 , and the second insulating layer IS2 is located between the common electrode layer 4 and the isolation layer 3 ;

[0128] The common electrode layer 4 is disposed between the first cavity Q1 and the second cavity Q2 . The first electrode layer 11 and the common electrode layer 4 serve as two electrodes of the first capacitor, and the second electrode layer 21 and the common electrode layer 4 serve as two electrodes of the second capacitor.

[0129] The film layer and the cavity between the first electrode layer 11 and the common electrode layer 4 serve as the insulating medium of the first capacitor, and the film layer and the cavity between the second electrode layer 21 and the common electrode layer 4 serve as the insulating medium of the second capacitor.

[0130] In an exemplary embodiment, the materials of the common electrode layer 4 , the first electrode layer 11 , and the second electrode layer 21 may include metal or metal oxide.

[0131] Exemplarily, the common electrode layer 4 , the first electrode layer 11 and the second electrode layer 21 are made of the same material.

[0132] In an exemplary embodiment, materials of the first and second insulating layers IS1 and IS2 may include an inorganic insulating material or an organic insulating material, wherein the inorganic insulating material may include at least one of silicon nitride, silicon oxide, or silicon oxynitride, and the organic insulating material may include resin.

[0133] In actual application, when the temperature rises, the height of the first thermal deformation structure 12 and the second thermal deformation structure 22 in the direction perpendicular to the plane where the isolation layer 3 is located increases, that is, the first thermal deformation structure 12 supports the first electrode layer 11 to deform in the direction away from the common electrode layer 4, and the second thermal deformation structure 22 supports the second electrode layer 21 to deform in the direction close to the common electrode layer 4, so that the distance between the two electrodes of the first capacitor increases and the distance between the two electrodes of the second capacitor decreases. According to the calculation formula of the capacitor: C = εs / 4πkd, C is the capacitance value, ε is the dielectric constant, s is the facing area of ​​the two electrodes, k is a constant, and d is the distance between the two electrodes; it can be obtained that C 1t Increase (i.e. +C1t ), C 2t Reduce (ie -C 2t ). C 1t Represents the change in capacitance of the first capacitor due to temperature increase, -C 2t represents the change in capacitance of the second capacitor caused by temperature increase.

[0134] In at least one sensing device provided in an embodiment of the present application, as shown in Figures 2, 3, 4, 8 and 9, the first sensor A1 also includes a first supporting portion Z1, a third insulating layer IS3 and a fourth insulating layer IS4. The first supporting portion Z1 is located between the first insulating layer IS1 and the third insulating layer IS3 and is arranged around the first cavity Q1. The fourth insulating layer IS4 covers the first electrode layer 11, and the first thermal deformation structure 12 is in direct contact with the first insulating layer IS1 and the third insulating layer IS3, respectively.

[0135] In some embodiments, the first support portion Z1 and the third insulating layer IS3 may be an integrated structure, wherein the integrated structure refers to being prepared using the same raw materials in the same process steps. Similar descriptions hereinbelow have the same meaning as here and are not repeated here.

[0136] In some embodiments, the first support portion Z1 , the first insulating layer IS1 , and the third insulating layer IS3 may be an integrated structure.

[0137] In an exemplary embodiment, materials of the third insulating layer IS3 and the fourth insulating layer IS4 may include an inorganic insulating material or an organic insulating material, wherein the inorganic insulating material may include at least one of silicon nitride, silicon oxide, or silicon oxynitride, and the organic insulating material may include resin.

[0138] In an exemplary embodiment, the first insulating layer IS1 , the second insulating layer IS2 , the third insulating layer IS3 , and the fourth insulating layer IS4 are made of the same material.

[0139] In an exemplary embodiment, as shown in Figures 3 and 9 , a plurality of etched holes T are provided in the third insulating layer IS3. During the fabrication of the sensor device, an etching liquid is injected through the etched holes T to form a cavity structure. The structures marked T in the drawings provided in the embodiments of this application are all etched holes, for clarification. After the cavity structure is formed, the etched holes T can be filled in a subsequent film-forming process.

[0140] Illustratively, the material of the first electrode layer 11 may be used to fill the etched hole T on the third insulating layer IS3 . In this case, the etched hole T on the third insulating layer IS3 may be filled while the first electrode layer 11 is formed.

[0141] For example, the etched hole T on the third insulating layer IS3 may be filled with the same material as that of the third insulating layer IS3 , but an additional filling step is required.

[0142] The first support portion Z1 is located between the first insulating layer IS1 and the third insulating layer IS3 and is disposed around the first cavity Q1 , which means that the first support portion Z1 , the first insulating layer IS1 and the third insulating layer IS3 serve as the outer wall of the first cavity Q1 .

[0143] The fourth insulating layer IS4 covers the first electrode layer 11 to protect the first electrode layer 11 and prevent the first electrode layer 11 from being exposed and corroded or damaged.

[0144] In at least one sensing device provided in an embodiment of the present application, as shown in FIG2 , FIG3 , and FIG4 , when the first cavity Q1 includes the first closed sub-cavity F1, and the second cavity Q2 includes the second closed sub-cavity F2 and the first open sub-cavity K1, the second thermal deformation structure 22 is disposed in the first open sub-cavity K1 and contacts the two inner walls opposite to the first open sub-cavity K1;

[0145] As shown in Figures 2, 3 and 4, the second sensor 2 also includes a fifth insulating layer IS5, a sixth insulating layer IS6, a seventh insulating layer IS7, a second support portion Z2 and a third support portion Z3. The second support portion Z2 is located between the fifth insulating layer IS5 and the sixth insulating layer IS6 and is arranged around the second closed sub-cavity F2. The third support portion Z3 is located between the second electrode layer 21 and the seventh insulating layer IS7 and is arranged around the first open sub-cavity K1. The second electrode layer 21 is arranged in the first open sub-cavity K1 and is located on the side of the sixth insulating layer IS6 away from the second closed sub-cavity F2; the second thermal deformation structure 22 is in direct contact with the second electrode layer 21 and the seventh insulating layer IS7 respectively, and a plurality of first through holes Via1 are provided on the seventh insulating layer IS7. The orthographic projection of the second thermal deformation structure 22 on the isolation layer 3 and the area enclosed by the orthographic projection of the outer contour of the first through hole Via1 on the isolation layer 3 do not overlap with each other.

[0146] Exemplarily, the materials of the fifth insulating layer IS5, the sixth insulating layer IS6, and the seventh insulating layer IS7 may include inorganic insulating materials or organic insulating materials, wherein the inorganic insulating material may include at least one of silicon nitride, silicon oxide, or silicon oxynitride, and the organic insulating material may include resin.

[0147] Illustratively, the second support portion Z2 , the fifth insulating layer IS5 and the sixth insulating layer IS6 may be an integrated structure.

[0148] Exemplarily, the third support portion Z3 and the seventh insulating layer IS7 may be an integrated structure.

[0149] Illustratively, the fifth insulating layer IS5 , the sixth insulating layer IS6 , the seventh insulating layer IS7 , the second supporting portion Z2 , and the third supporting portion Z3 may all be made of the same material.

[0150] The first open sub-cavity K1 is connected to the external environment by providing a plurality of first through holes Via1 on the seventh insulating layer IS7 .

[0151] In addition, it should be noted that FIG3 shows an etched hole T provided in the sixth insulating layer IS6. During the process of manufacturing the sensor device, an etching liquid is injected through the etched hole T to form a cavity structure (e.g., the second closed sub-cavity F2). After the cavity structure is formed, the etched hole T can be filled in a subsequent film formation process.

[0152] Illustratively, as shown in FIG3 , the etched hole T on the sixth insulating layer IS6 may be filled with the material of the second electrode layer 21 ; in this case, the etched hole T on the sixth insulating layer IS6 may be filled while the second electrode layer 21 is formed.

[0153] Exemplarily, as shown in FIG. 2 , the etched hole T on the sixth insulating layer IS6 may be filled with the same material as that of the sixth insulating layer IS6 (the material is consistent after filling), but an additional filling step is required.

[0154] In actual applications, the sensing device also includes multiple connecting electrodes for transmitting electrical signals, such as the connecting electrode E1, the connecting electrode E2 and the connecting electrode E3 shown in Figure 2, wherein the connecting electrode E1 is electrically connected to the first electrode layer 11, the connecting electrode E2 is electrically connected to the second electrode layer 21, and the connecting electrode E3 is electrically connected to the common electrode layer 4; the setting function of the connecting electrodes of the sensing device in other embodiments is similar to that here and will not be repeated here.

[0155] The following uses the structure of the sensing device shown in FIG2 or FIG3 as an example to specifically describe the working principle of the sensing device. The sensing device shown in FIG2 or FIG3 can be used to simultaneously detect relative pressure and temperature, and can be used as a pressure sensor. It can be applied to devices such as electronic watches or drones. The specific working principle is as follows:

[0156] Taking the conditions of heating and pressurizing as an example, when the temperature rises, the height (d) of the first thermal deformation structure 12 and the second thermal deformation structure 22 in the direction perpendicular to the plane where the isolation layer 3 is located increases, that is, the first thermal deformation structure 12 supports the first electrode layer 11 to deform in the direction away from the common electrode layer 4, and the second thermal deformation structure 22 supports the second electrode layer 21 to deform in the direction close to the common electrode layer 4, so that the distance d between the two electrodes of the first capacitor increases, and the distance d between the two electrodes of the second capacitor decreases. According to the calculation formula of the capacitor: C = εs / 4πkd, C is the capacitance value, ε is the dielectric constant, s is the facing area of ​​the two electrodes, k is a constant, and d is the distance between the two electrodes; then C 1t Reduce (ie -C 1t ), C 2t Increase (i.e. +C 2t );C 1t represents the change in capacitance of the first capacitor due to temperature increase, C 2t represents the change in capacitance of the second capacitor caused by temperature increase;

[0157] When the pressure increases, under the action of external pressure as shown in FIG2 , the first electrode layer 11 deforms toward the common electrode layer 4, and the second electrode layer 21 deforms toward the common electrode layer 4, which reduces the distance d between the two electrodes of the first capacitor and reduces the distance d between the two electrodes of the second capacitor. According to the capacitor calculation formula: C = εs / 4πkd, C 1p Increase (i.e. +C 1p ), C2 p Increase (i.e. +C 2p ).

[0158] According to the above analysis, under the conditions of heating and pressurization, the capacitance change of the first sensor 1 is △C1=C 1p -C 1t Formula (1): Capacitance change of the second sensor 2 ΔC2 = C 2p +C 2t Formula (2);

[0159] Since the first thermal deformation structure 12 and the second thermal deformation structure 22 are the same, C 1t =C 2t =C t ; Since the volumes of the two closed sub-cavities are the same, C 1p =C 2p =C p

[0160] Adding the above formula (1) and formula (2) yields: △C1+△C2=2C pFormula (3);

[0161] Subtracting the above formula (1) from formula (2) yields: △C2-△C1=2C t Formula (4);

[0162] There is a preset relationship between the change in capacitance △C and the change in current △I, where δ is a constant, namely: △C=δ*△I Formula (5)

[0163] Then: △C1=δ*△I1, △C2=δ*△I2; △I1 and △I2 can be directly obtained by testing the circuit connected to the sensor device, and the specific values ​​of △C1 and △C2 can be calculated. Combining the above formulas (3) and (4) and the specific values ​​of △C1 and △C2, C p and C t The specific value of C t It can be called the relevant value of the first parameter (temperature), C p It can be called the relevant value of the second parameter (pressure). t The temperature value is calculated based on the preset relationship with the temperature. p The pressure value is calculated in relation to the preset pressure.

[0164] In at least one sensing device provided in an embodiment of the present application, as shown in FIG8 and FIG9 , when the first cavity Q1 includes the second open sub-cavity K2, and the second cavity Q2 includes the third open sub-cavity K3 and the fourth open sub-cavity K4, the second thermal deformation structure 22 is disposed in the third open sub-cavity K3 and contacts two opposite inner walls of the third open sub-cavity K3;

[0165] The second sensor 2 further includes a fifth insulating layer IS5, a sixth insulating layer IS6, a seventh insulating layer IS7, a second support portion Z2, and a third support portion Z3. The second support portion Z2 is located between the fifth insulating layer IS5 and the sixth insulating layer IS6 and is disposed around the fourth open sub-cavity K4. The third support portion Z3 is located between the second electrode layer 21 and the seventh insulating layer IS7 and is disposed around the third open sub-cavity K3. The second electrode layer 21 is disposed in the third open sub-cavity K3 and is located on a side of the sixth insulating layer IS6 away from the fourth open sub-cavity K4.

[0166] The second thermal deformation structure 22 is in direct contact with the second electrode layer 21 and the seventh insulating layer IS7 respectively. A plurality of first through holes Via1 are provided on the seventh insulating layer IS7, and a plurality of second through holes Via2 are provided on the sixth insulating layer IS6. The second through holes Via2 pass through the second electrode layer 21. The orthographic projection of the second thermal deformation structure 22 on the isolation layer 3 does not overlap with the area enclosed by the orthographic projection of the outer contour of the first through hole Via1 and the outer contour of the second through hole Via2 on the isolation layer 3.

[0167] In addition, as shown in Figures 8 and 9, the first sensor 1 includes a plurality of third through holes Via3, and the third through holes Via3 sequentially penetrate the fourth insulating layer IS4, the first electrode layer 11 and the third insulating layer IS3, and the orthographic projection of the first thermal deformation structure 12 on the isolation layer 3 and the area enclosed by the orthographic projection of the outer contour of the third through hole Via3 on the isolation layer 3 do not overlap with each other.

[0168] In an embodiment of the present application, as shown in Figures 8 and 9, a plurality of first through holes Via1 are provided on the seventh insulating layer IS7, so that the third open sub-cavity K3 is connected to the external environment; a plurality of second through holes Via2 are provided, so that the fourth open sub-cavity K4 is connected to the external environment; and a plurality of third through holes Via3 are provided, so that the second open sub-cavity K2 is connected to the external environment, so that the pressure obtained by the test of the sensing device is atmospheric pressure, that is, absolute pressure.

[0169] Among them, the sensing device shown in Figure 8 or Figure 9 can be used to simultaneously detect absolute pressure and temperature, and can be used as an acoustic sensor and applied to devices such as microphones. The specific temperature and pressure measurement working principle is similar to the measurement working principle of the sensing device shown in Figure 2 or Figure 3 in the previous text; after obtaining the absolute pressure value, the frequency (or frequency range) of the sound wave can be calculated based on the absolute pressure value.

[0170] In at least one sensing device provided in an embodiment of the present application, as shown in FIG5 , FIG6 and FIG7 , the first sensor 1 further includes a first detection structure Y1;

[0171] The first sensor 1 also includes a first insulating layer IS1, a first supporting portion Z1, a third insulating layer IS3 and a fourth insulating layer IS4. The first insulating layer IS1 is located on the side of the isolation layer 3 close to the first closed sub-cavity F1, the first supporting portion Z1 is located between the first insulating layer IS1 and the third insulating layer IS3, and is arranged around the first closed sub-cavity F1. The fourth insulating layer IS4 covers the first electrode layer 11. The first thermal deformation structure 12 is in direct contact with the first insulating layer IS1 and the third insulating layer IS3, respectively; the first detection structure Y1 is located on the side of the first electrode layer 11 away from the first closed sub-cavity F1, and the orthographic projection of the first detection structure Y1 on the isolation layer 3 does not overlap with the orthographic projection of the first thermal deformation structure 12 on the isolation layer 3.

[0172] In an exemplary embodiment, the material of the first detection structure Y1 may include piezoelectric material or piezoresistive material, wherein both piezoelectric material and piezoresistive material can generate changes in current under the action of pressure, and the effect of pressure is intuitively reflected in the sensing device as a change in the deflection of the first electrode layer 11.

[0173] In at least one sensing device provided in an embodiment of the present application, as shown in FIG5 , FIG6 and FIG7 , the second sensor 2 further includes a second detection structure Y2;

[0174] The second sensor 2 further includes a fifth insulating layer IS5, a sixth insulating layer IS6, a seventh insulating layer IS7, a second supporting portion Z2, and a third supporting portion Z3. The second supporting portion Z2 is located between the fifth insulating layer IS5 and the sixth insulating layer IS6 and is disposed around the second closed sub-cavity F2. The third supporting portion Z3 is located between the second electrode layer 21 and the seventh insulating layer IS7 and is disposed around the first open sub-cavity K1. The second electrode layer 21 is disposed within the first open sub-cavity K1 and is located on a side of the sixth insulating layer IS6 away from the second closed sub-cavity F2. The second thermal deformation structure 22 is in direct contact with the second electrode layer 21 and the seventh insulating layer IS7, respectively.

[0175] The second detection structure Y2 is disposed in the first open sub-cavity K1 and contacts the second electrode layer 21 , and the orthographic projection of the second detection structure Y2 on the isolation layer 3 does not overlap with the orthographic projection of the second thermal deformation structure 22 on the isolation layer 3 .

[0176] In an exemplary embodiment, the material of the second detection structure Y2 may include piezoelectric material or piezoresistive material, wherein both piezoelectric material and piezoresistive material can generate changes in current under the action of pressure, and the effect of pressure is intuitively reflected in the sensing device as a change in the deflection of the second electrode layer 21.

[0177] In an exemplary embodiment, the orthographic projections of the first detection structure Y1 and the second detection structure Y2 on the isolation layer 3 overlap.

[0178] Exemplarily, the first detection structure Y1 and the second detection structure Y2 have the same structure and material.

[0179] In an exemplary embodiment, the volumes of the cavity structure of the first closed sub-cavity F1 excluding the first thermally deformed structure 12 and the cavity structure of the second closed sub-cavity F2 are substantially the same.

[0180] The following uses the structure of the sensing device shown in FIG5 or FIG6 as an example to specifically describe the working principle of the sensing device. The sensing device shown in FIG5 or FIG6 can be used to simultaneously detect relative pressure and temperature, and can be used as a pressure sensor. It can be applied to devices such as electronic watches or drones. The specific working principle is as follows:

[0181] Taking the conditions of heating and pressurization as an example, when the temperature rises, the height (d) of the first thermal deformation structure 12 and the second thermal deformation structure 22 in the direction perpendicular to the plane of the isolation layer 3 increases, so that the first thermal deformation structure 12 supports the first electrode layer 11 to deform in the direction away from the isolation layer 3, and the second thermal deformation structure 22 supports the second electrode layer 21 to deform in the direction close to the isolation layer 3. The first detection structure Y1 and the second detection structure Y2 are respectively subjected to forces in opposite directions. The relationship between the force applied to the detection structure and the change in deflection is f = λ*△y, △y is the change in deflection, and λ is a constant; the first detection structure Y1 and the second detection structure Y2 undergo changes in deflection in opposite directions, and the deflection change caused by the first detection structure Y1 is -△y t , the deflection change of the second detection structure Y2 is +△y t .

[0182] When the pressure increases, the first detection structure Y1 deforms toward the first electrode layer 11, and the second detection structure Y2 deforms toward the second electrode layer 21. At this time, the deflection change of the first detection structure Y1 caused by the pressure increase is +△y p The deflection change of the second detection structure Y2 caused by the pressure increase is +△y p .

[0183] According to the above analysis, under the conditions of heating and pressurization, the total change in the deflection of the first sensor 1 is △y1 = △y p -△y t Formula (6): The total change in deflection of the second sensor 2 △y2=△y p +△y t Formula (7);

[0184] According to the relationship between the total change in deflection and the measured current △y=a*I, a is a constant, then:

[0185] △y1=a*△I1, △y2=a*△I2; then: △y p -△y t =a*△I1 Formula (8); △y p +△y t =a*△I2 formula (9);

[0186] The sum of the above formula (8) and formula (9) is: 2△y p =a*△I1+a*△I2 formula (10);

[0187] The sum of the above formula (8) and formula (9) is: 2△y t =a*△I2-a*△I1 Formula (11)

[0188] The above I1 is the current measured by the first sensor 1, and the above I2 is the current measured by the second sensor 2. According to formula (10) and formula (11), △y can be calculated. p and △y t ; Among them, △y t It can be called the correlation value of the first parameter (temperature), △y p It can be called the relevant value of the second parameter (pressure), and then according to △y t The temperature value is calculated based on the preset relationship with the temperature. p The pressure value is calculated in relation to the preset pressure.

[0189] In at least one sensing device provided by an embodiment of the present application, the second parameter includes pressure.

[0190] Here, pressure includes relative pressure and absolute pressure.

[0191] For example, as shown in Figures 2 to 6, relative pressure refers to the difference between the external pressure and the pressure of the closed sub-cavity, while absolute pressure refers to the external pressure. Taking the structure shown in Figure 2 as an example, when the volumes of the hollow structures in the first closed sub-cavity F1 and the second closed sub-cavity F2 are the same and the vibrating membranes are the same, the relative pressure measured by the first sensor 1 and the relative pressure measured by the second sensor are equal, and both are equal to the difference between the external pressure and the pressure of the closed sub-cavity (assuming that the pressures in the first closed sub-cavity F1 and the second closed sub-cavity F2 are equal).

[0192] In at least one sensing device provided by an embodiment of the present application, as shown in FIG10A , FIG10B , FIG12 and FIG13 , the first cavity Q1 includes a third closed sub-cavity F3 , and the second cavity Q2 includes a fourth closed sub-cavity F4 ;

[0193] The first electrode layer 11 is located on a side of the third closed sub-cavity F3 away from the isolation layer 3 , and the second electrode layer 21 is located on a side of the fourth closed sub-cavity F4 away from the isolation layer 3 .

[0194] In some embodiments, the third closed sub-cavity F3 and the fourth closed sub-cavity F4 may have the same structure and size.

[0195] In some embodiments, the first sensor 1 and the second sensor 2 in the sensing devices shown in FIG. 10A , FIG. 10B , FIG. 12 and FIG. 13 may be configured to have the same structure.

[0196] In some embodiments, the first sensor 1 and the second sensor 2 in the sensing device shown in FIG. 10A , FIG. 10B , FIG. 12 and FIG. 13 may be symmetrically arranged.

[0197] In at least one sensing device provided in an embodiment of the present application, as shown in Figures 10A, 10B, 12, and 13, the first sensor 1 further includes a first insulating layer IS1, a third insulating layer IS3, a fourth insulating layer IS4, and a first support portion Z1. The first insulating layer IS1 covers the isolation layer 3. The first support portion Z1 is located between the first insulating layer IS1 and the third insulating layer IS3 and is disposed around the third enclosed sub-cavity F3. The first thermally deformable structure 12 contacts the first insulating layer IS1 and the third insulating layer IS3, respectively. The fourth insulating layer IS4 is located on a side of the first electrode layer 11 away from the third insulating layer IS3.

[0198] The second sensor 2 also includes a fifth insulating layer IS5, a sixth insulating layer IS6, a seventh insulating layer IS7 and a second supporting portion Z2. The isolation layer 3 covers the fifth insulating layer IS5. The second supporting portion Z2 is located between the fifth insulating layer IS5 and the sixth insulating layer IS6 and is arranged around the fourth closed sub-cavity F4. The second thermal deformation structure 22 contacts the fifth insulating layer IS5 and the sixth insulating layer IS6 respectively, and the second electrode layer 21 is located between the sixth insulating layer IS6 and the seventh insulating layer IS7.

[0199] Among them, the introduction of the first insulating layer IS1, the third insulating layer IS3, the fourth insulating layer IS4 and the first supporting part Z1, and the fifth insulating layer IS5, the sixth insulating layer IS6, the seventh insulating layer IS7 and the second supporting part Z2 can be referred to the previous description and will not be repeated here.

[0200] In at least one sensing device provided in an embodiment of the present application, as shown in FIG10A and FIG10B , the first sensor 1 further includes a first sliding electrode HD1. The first sliding electrode HD1 is disposed in the third enclosed sub-cavity F3 and overlaps with the orthographic projection of the first electrode layer 11 on the isolation layer 3. The first sliding electrode HD1 is configured to slide along a first direction (e.g., OA direction or AO direction).

[0201] The second sensor 2 further includes a second sliding electrode HD2 , which is disposed in the fourth closed sub-cavity F4 and overlaps with the orthographic projection of the second electrode layer 21 on the isolation layer 3 . The first sliding electrode HD1 and the second sliding electrode HD2 have the same sliding direction.

[0202] For example, in FIG. 10A and FIG. 10B , the first direction is a direction perpendicular to the plane where the isolation layer 3 is located.

[0203] The above-mentioned “overlapping exists” refers to at least partial overlapping, including partial overlapping and complete overlapping.

[0204] In an exemplary embodiment, the first sliding electrode HD1 is slidably connected to the inner wall of the third closed sub-cavity F3; for example, as shown in Figures 10A and 10B, when the first sliding electrode HD1 slides in a direction perpendicular to the plane where the isolation layer 3 is located, the first sliding electrode HD1 is slidably connected to the first support portion Z1.

[0205] In an exemplary embodiment, the second sliding electrode HD2 is slidably connected to the inner wall of the fourth closed sub-cavity F4; for example, as shown in Figures 10A and 10B, when the second sliding electrode HD2 slides in a direction perpendicular to the plane where the isolation layer 3 is located, the second sliding electrode HD2 is slidably connected to the second support portion Z2.

[0206] When the first sliding electrode HD1 and the second sliding electrode HD2 slide in a direction perpendicular to the plane of the isolation layer 3 (for example, the OA direction shown in FIG10A ), in the first sensor 1, the first sliding electrode HD1 and the first electrode layer 11 serve as two electrodes of a third capacitor. As the position of the first sliding electrode HD1 changes, the distance between the first sliding electrode HD1 and the first electrode layer 11 changes, and the capacitance value of the third capacitor changes. In the second sensor 2, the second sliding electrode HD2 and the second electrode layer 21 serve as two electrodes of a fourth capacitor. As the distance between the second sliding electrode HD2 changes, the capacitance value of the fourth capacitor changes. The first sliding electrode HD1 and the second sliding electrode HD2 are in the same motion state, and the accelerations of the first sliding electrode HD1 and the second sliding electrode HD2 can be calculated based on the capacitance changes of the third and fourth capacitors.

[0207] In at least one sensing device provided in an embodiment of the present application, as shown in FIG10A and FIG10B , the orthographic projection of the first sliding electrode HD1 on the isolation layer 3 does not overlap with the orthographic projection of the first thermally deformable structure 12 on the isolation layer 3 , and the orthographic projection of the second sliding electrode HD2 on the isolation layer 3 does not overlap with the orthographic projection of the second thermally deformable structure 21 on the isolation layer 3 ;

[0208] FIG14 and FIG15 provide schematic top views of the structures of two types of sliding electrodes.

[0209] In an exemplary embodiment, the first sliding electrode HD1 and the second sliding electrode HD2 have the same structure.

[0210] As shown in Figures 14 and 15, the first sliding electrode HD1 and the second sliding electrode HD2 each include a mass block 81 and at least one extended electrode 82. The mass block 81 and the extended electrode 82 are connected. As shown in Figures 10A and 10B, the orthographic projection of the extended electrode 82 on the isolation layer 3 overlaps with the orthographic projection of the first electrode layer 11 or the second electrode layer 21 on the isolation layer 3. The mass block 81 of the first sliding electrode HD1 is in sliding connection with the first support portion Z1, and the mass block 81 of the second sliding electrode HD2 is in sliding connection with the second support portion Z2.

[0211] When the mass block 81 of the first sliding electrode HD1 is slidably connected to the first support portion Z1, and the mass block 81 of the second sliding electrode HD2 is slidably connected to the second support portion Z2, both the first sliding electrode HD1 and the second sliding electrode HD2 slide along a plane perpendicular to the isolation layer 3. At this time, the acceleration measured by the sensing device is the acceleration in the direction perpendicular to the plane of the isolation layer 3, for example, the acceleration in the vertical direction.

[0212] The overlap of the orthographic projection of the extended electrode 82 on the isolation layer 3 and the orthographic projection of the first electrode layer 11 or the second electrode layer 21 on the isolation layer 3 means that the orthographic projection of the extended electrode 82 of the first sliding electrode HD1 on the isolation layer 3 overlaps with the orthographic projection of the first electrode layer 11 on the isolation layer 3, and the orthographic projection of the extended electrode 82 of the second sliding electrode HD2 on the isolation layer 3 overlaps with the orthographic projection of the second electrode layer 21 on the isolation layer 3.

[0213] In at least one sensing device provided in an embodiment of the present application, as shown in FIG11A and FIG11B , the second cavity Q further includes a fifth open sub-cavity K5 , which is located on a side of the fourth closed sub-cavity F4 away from the isolation layer 3 ;

[0214] The first sensor 1 further includes a first insulating layer IS1, a third insulating layer IS3, a fourth insulating layer IS4, and a first support portion Z1. The first insulating layer IS1 covers the isolation layer 3. The first support portion Z1 is located between the first insulating layer IS1 and the third insulating layer IS3 and is disposed around the third enclosed sub-cavity F3. The first thermal deformation structure 12 contacts the first insulating layer IS1 and the third insulating layer IS3, respectively. The fourth insulating layer IS4 is located on a side of the first electrode layer 11 away from the third insulating layer IS3.

[0215] The second sensor 2 also includes a fifth insulating layer IS5, a sixth insulating layer IS6, a seventh insulating layer IS7, a second support portion Z2 and a third support portion Z3. The isolation layer 3 covers the fifth insulating layer IS5. The second support portion Z2 is located between the fifth insulating layer IS5 and the sixth insulating layer IS6 and is arranged around the fourth closed sub-cavity F4. The second electrode layer 21 is located in the fifth open sub-cavity K5 and contacts the sixth insulating layer IS6. The third support portion Z3 is located between the second electrode layer 21 and the seventh insulating layer IS7 and is arranged around the fifth open sub-cavity K5. The second thermal deformation structure 22 is located in the fifth open sub-cavity K5 and contacts the second electrode layer 21 and the seventh insulating layer IS7.

[0216] Among them, the introduction of the first insulating layer IS1, the third insulating layer IS3, the fourth insulating layer IS4 and the first supporting part Z1, as well as the fifth insulating layer IS5, the sixth insulating layer IS6, the seventh insulating layer IS7, the second supporting part Z2 and the second supporting part Z2 can be referred to the previous description and will not be repeated here.

[0217] In at least one sensing device provided in an embodiment of the present application, as shown in FIG11A and FIG11B , the first sensor 1 includes a first sliding electrode HD1. The first sliding electrode HD1 is disposed within the third enclosed sub-cavity F3 and overlaps with the orthographic projection of the first electrode layer 11 on the isolation layer 3. The first sliding electrode HD1 is configured to slide along a first direction, which is a direction parallel to the plane of the isolation layer 3 (e.g., the OB direction or the BO direction).

[0218] The second sensor 2 further includes a second sliding electrode HD2 , which is disposed in the fourth closed sub-cavity F4 and overlaps with the orthographic projection of the second electrode layer 21 on the isolation layer 3 . The first sliding electrode HD1 and the second sliding electrode HD2 have the same sliding direction.

[0219] In an exemplary embodiment, the first sliding electrode HD1 is slidably connected to the inner wall of the third closed sub-cavity F3; for example, as shown in Figures 11A and 11B, when the first sliding electrode HD1 slides along a direction parallel to the plane of the isolation layer 3 (for example, the OB direction), the first sliding electrode HD1 is slidably connected to the first insulating layer IS1.

[0220] In an exemplary embodiment, the second sliding electrode HD2 is slidably connected to the inner wall of the fourth closed sub-cavity F4; for example, as shown in Figures 11A and 11B, when the second sliding electrode HD2 slides along a direction parallel to the plane of the isolation layer 3 (for example, the OB direction), the second sliding electrode HD2 is slidably connected to the sixth insulating layer IS6.

[0221] When the first sliding electrode HD1 and the second sliding electrode HD2 slide in a direction parallel to the plane of the isolation layer 3 (for example, the OB direction shown in FIG11A ), in the first sensor 1, the first sliding electrode HD1 and the first electrode layer 11 serve as two electrodes of a third capacitor. As the position of the first sliding electrode HD1 changes, the area facing each other changes, and the capacitance of the third capacitor changes. In the second sensor 2, the second sliding electrode HD2 and the second electrode layer 21 serve as two electrodes of a fourth capacitor. As the position of the second sliding electrode HD2 changes, the capacitance of the fourth capacitor changes. The first sliding electrode HD1 and the second sliding electrode HD2 are in the same motion state, and the accelerations of the first sliding electrode HD1 and the second sliding electrode HD2 can be calculated based on the capacitance changes of the third and fourth capacitors.

[0222] In at least one sensing device provided in an embodiment of the present application, as shown in FIG11A and FIG11B , the orthographic projection of the first sliding electrode HD1 on the isolation layer 3 does not overlap with the orthographic projection of the first thermally deformable structure 12 on the isolation layer 3 , and the orthographic projection of the second sliding electrode HD2 on the isolation layer 3 does not overlap with the orthographic projection of the second thermally deformable structure 22 on the isolation layer 3 ;

[0223] FIG14 and FIG15 provide schematic top views of the structures of two types of sliding electrodes.

[0224] In an exemplary embodiment, the first sliding electrode HD1 and the second sliding electrode HD2 have the same structure.

[0225] As shown in Figures 14 and 15, the first sliding electrode HD1 and the second sliding electrode HD2 both include a mass block 81 and at least one extended electrode 82. The mass block 81 and the extended electrode 82 are connected, and the orthographic projection of the extended electrode 82 on the isolation layer 3 overlaps with the orthographic projection of the first electrode layer 11 or the second electrode layer 21 on the isolation layer 3. As shown in Figures 11A and 11B, the mass block 81 of the first sliding electrode HD1 is slidably connected to the first insulating layer IS1, and the mass block 81 of the second sliding electrode HD2 is slidably connected to the sixth insulating layer IS6; a plurality of first through holes Via1 are provided on the seventh insulating layer IS7, and the orthographic projection of the second thermal deformation structure 22 on the isolation layer 3 and the area enclosed by the orthographic projection of the outer contour of the first through hole Via1 on the isolation layer 3 do not overlap with each other.

[0226] When the mass block 81 of the first sliding electrode HD1 is in sliding connection with the first insulating layer IS1, and the mass block 81 of the second sliding electrode HD2 is in sliding connection with the sixth insulating layer IS6, both the first sliding electrode HD1 and the second sliding electrode HD2 slide along a plane parallel to the isolation layer 3. At this time, the acceleration measured by the sensing device is the acceleration in a direction parallel to the plane of the isolation layer 3, for example, the horizontal acceleration.

[0227] In at least one sensing device provided in an embodiment of the present application, as shown in FIG10A to FIG11B , the first sliding electrode HD1 and the second sliding electrode HD2 are identical; the first direction is a direction perpendicular to the plane where the isolation layer 3 is located (e.g., the OA direction or the AO direction) or the first direction is a direction parallel to the plane where the isolation layer 3 is located (e.g., the OB direction or the BO direction);

[0228] As shown in FIG10A and FIG10B , when the first direction is a direction perpendicular to the plane where the isolation layer 3 is located (for example, the OA direction or the AO direction), the size of the mass block 81 in the direction perpendicular to the plane where the isolation layer 3 is located is smaller than the size of the cavity in which it is located in the direction perpendicular to the plane where the isolation layer 3 is located;

[0229] For example, the size of the mass block 81 of the first sliding electrode HD1 along the direction perpendicular to the plane of the isolation layer 3 is smaller than the size of the first cavity Q1 along the direction perpendicular to the plane of the isolation layer 3, that is, the height of the mass block 81 along the OA direction is smaller than the height of the first cavity Q1 along the OA direction.

[0230] For another example, the size of the mass block 81 of the second sliding electrode HD2 in a direction perpendicular to the plane of the isolation layer 3 is smaller than the size of the second cavity Q2 in a direction perpendicular to the plane of the isolation layer 3, that is, the height of the mass block 81 in the OA direction is smaller than the height of the second cavity Q2 in the OA direction.

[0231] As shown in Figures 11A and 11B, when the first direction is a direction parallel to the plane of the isolation layer 3 (for example, the OB direction or the BO direction), the dimensions of the first sliding electrode HD1 and the second sliding electrode HD2 along the direction parallel to the plane of the isolation layer 3 are both smaller than the dimensions of the cavity in which they are located along the direction parallel to the plane of the isolation layer 3.

[0232] For example, the dimension of the first sliding electrode HD1 in a direction parallel to the plane where the isolation layer 3 is located is smaller than the dimension of the first cavity Q1 in a direction parallel to the plane where the isolation layer 3 is located, that is, the length of the first sliding electrode HD1 in the OB direction is smaller than the height of the first cavity Q1 in the OB direction;

[0233] For another example, the dimension of the second sliding electrode HD2 along the direction parallel to the plane of the isolation layer 3 is smaller than the dimension of the second cavity Q2 along the direction parallel to the plane of the isolation layer 3, that is, the length of the second sliding electrode HD2 along the OB direction is smaller than the length of the second cavity Q2 along the OB direction.

[0234] In this exemplary embodiment, regardless of whether the first direction is perpendicular to or parallel to the plane of the isolation layer 3, the dimensions of the first sliding electrode HD1 and the second sliding electrode HD2 in a direction parallel to the plane of the isolation layer 3 are both smaller than the dimensions of the cavity in which they are located, also in a direction parallel to the plane of the isolation layer 3. Furthermore, the dimensions of the first sliding electrode HD1 and the second sliding electrode HD2 in a direction perpendicular to the plane of the isolation layer 3 are both smaller than the dimensions of the cavity in which they are located, also in a direction parallel to the plane of the isolation layer 3. This facilitates smooth sliding of the sliding electrodes and prevents the effects of excessive frictional resistance on sliding. The figures provided in the embodiments of this application are drawn based on this example.

[0235] The following describes the working principle of the sensor device, taking the structure of FIG. 10A or FIG. 10B as an example. The sensor device shown in FIG. 10A or FIG. 10B can be used to simultaneously detect acceleration and temperature, can be used as a motion sensor, and can be applied to devices such as accelerometers or gyroscopes. The specific working principle is as follows:

[0236] Taking the condition of heating acceleration (for example, acceleration in the OA direction) as an example, when the temperature rises, the height (d) of the first thermal deformation structure 12 and the second thermal deformation structure 22 in the direction perpendicular to the plane where the isolation layer 3 is located increases, that is, the first thermal deformation structure 12 supports the first electrode layer 11 to deform in the direction away from the isolation layer 3, and the second thermal deformation structure 22 supports the first electrode layer 11 to deform in the direction away from the isolation layer 3, so that the distance d between the two electrodes of the third capacitor increases, and the distance d between the two electrodes of the fourth capacitor increases. According to the calculation formula of the capacitor: C = εs / 4πkd, C is the capacitance value, ε is the dielectric constant, s is the facing area of ​​the two electrodes, k is a constant, and d is the distance between the two electrodes; then C 3t Increase (i.e. +C 3t ), C 4t Increase (i.e. +C 4t );C 3t Represents the capacitance change of the third capacitor caused by temperature increase, C 4t represents the change in capacitance of the fourth capacitor caused by temperature increase.

[0237] When the acceleration of the sensing device along the OA direction increases, the first sliding electrode HD1 moves along the OA direction, the second sliding electrode HD2 moves along the OA direction, the distance between the first sliding electrode HD1 and the first electrode layer 11 decreases, and the distance between the second sliding electrode HD2 and the second electrode layer 21 increases, then C 3a Increase (i.e. +C 3a ), C 4a Reduce (ie -C 4a ), C 3a Represents the change in capacitance of the third capacitor caused by the increase in acceleration, -C 4a represents the change in capacitance of the fourth capacitor caused by the increase in acceleration.

[0238] According to the above analysis, under the conditions of heating and acceleration, the capacitance change of the first sensor 1 is △C1=C 3t +C 3a Formula (12): Capacitance change of the second sensor 2 ΔC2 = C 4t -C 4a Formula (13);

[0239] Since the first thermal deformation structure 12 and the second thermal deformation structure 22 are the same, C 3t =C 4t =C t Since the volume of the cavity structure of the two closed sub-cavities is the same, the first sliding electrode HD1 and the second sliding electrode HD2 are the same, C 3a =C 4a =C a ;

[0240] Adding the above formula (12) and formula (13) yields: △C1+△C2=2C t Formula (14);

[0241] Subtracting the above formula (12) from formula (13) yields: △C2-△C1=2C a Formula (15);

[0242] There is a preset relationship between the change in capacitance △C and the change in current △I, where δ is a constant, namely: △C=δ*△I Formula (16)

[0243] Then: △C1=δ*△I1, △C2=δ*△I2; △I1 and △I2 can be directly obtained by testing the circuit connected to the sensor device, and the specific values ​​of △C1 and △C2 can be calculated. Combining the above formula (14) and formula (15) and the specific values ​​of △C1 and △C2, C t and C a The specific value of Ct It can be called the relevant value of the first parameter (temperature), C a It can be called the relevant value of the second parameter (acceleration). t The temperature value is calculated based on the preset relationship with the temperature. a The acceleration value is calculated based on the preset relationship with the acceleration.

[0244] It should be noted that C a The value of is related to the distance d between the sliding electrode and the electrode layer, and △d=(△at 2 ) / 2; where △d is the change in spacing d, which is also the sliding distance of the sliding electrode, △a is the change in acceleration, and t is the movement time. This formula can be used to calculate the change in acceleration.

[0245] The following describes the working principle of the sensor device, taking the structure of FIG. 11A or FIG. 11B as an example. The sensor device shown in FIG. 11A or FIG. 11B can be used to simultaneously detect acceleration and temperature, can be used as a motion sensor, and can be applied to devices such as accelerometers or gyroscopes. The specific working principle is as follows:

[0246] Taking the condition of heating acceleration (for example, acceleration in the OB direction) as an example, when the temperature rises, the height (d) of the first thermal deformation structure 12 and the second thermal deformation structure 22 in the direction perpendicular to the plane where the isolation layer 3 is located increases, that is, the first thermal deformation structure 12 supports the first electrode layer 11 to deform in the direction away from the isolation layer 3, and the second thermal deformation structure 22 supports the first electrode layer 11 to deform in the direction close to the isolation layer 3, so that the distance d between the two electrodes of the third capacitor increases, and the distance d between the two electrodes of the fourth capacitor decreases. According to the calculation formula of the capacitor: C = εs / 4πkd, C is the capacitance value, ε is the dielectric constant, s is the facing area of ​​the two electrodes, k is a constant, and d is the distance between the two electrodes; then C 3t Increase (i.e. +C 3t ), C 4t Reduce (ie -C 4t );C 3t Represents the change in capacitance of the third capacitor due to temperature increase, -C 4t represents the change in capacitance of the fourth capacitor caused by temperature increase.

[0247] When the acceleration of the sensing device increases along the OB direction, the first sliding electrode HD1 moves along the OB direction, the second sliding electrode HD2 moves along the OB direction, the facing area between the first sliding electrode HD1 and the first electrode layer 11 increases, and the facing area between the second sliding electrode HD2 and the second electrode layer 21 increases, then C 3a Increase (i.e. +C3a ), C 4a Increase (i.e. +C 4a ), C 3a represents the change in capacitance of the third capacitor caused by the increase in acceleration, C 4a represents the change in capacitance of the fourth capacitor caused by the increase in acceleration.

[0248] According to the above analysis, under the conditions of heating and acceleration, the capacitance change of the first sensor 1 is △C1=C 3t +C 3a Formula (17): Capacitance change of the second sensor 2 ΔC2 = -C 4t +C 4a Formula (18);

[0249] Since the first thermal deformation structure 12 and the second thermal deformation structure 22 are the same, C 3t =C 4t =C t Since the volume of the cavity structure of the two closed sub-cavities is the same, the first sliding electrode HD1 and the second sliding electrode HD2 are the same, C 3a =C 4a =C a ;

[0250] Adding the above formula (17) and formula (18) yields: △C1+△C2=2C a Formula (19);

[0251] Subtracting the above formula (17) from formula (18) yields: △C2-△C1=2C t Formula (20);

[0252] There is a preset relationship between the change in capacitance △C and the change in current △I, where δ is a constant, namely: △C=δ*△I Formula (21)

[0253] Then: △C1=δ*△I1, △C2=δ*△I2; △I1 and △I2 can be directly obtained by testing the circuit connected to the sensor device, and the specific values ​​of △C1 and △C2 can be calculated. Combining the above formula (19) and formula (20) and the specific values ​​of △C1 and △C2, C t and C a The specific value of C t It can be called the relevant value of the first parameter (temperature), C a It can be called the relevant value of the second parameter (acceleration). t The temperature value is calculated based on the preset relationship with the temperature. aThe acceleration value is calculated based on the preset relationship with the acceleration.

[0254] In at least one sensing device provided in an embodiment of the present application, as shown in Figures 12 and 13, the first sensor 1 also includes a third detection structure Y3, which is arranged on a side of the first electrode layer 11 away from the third closed sub-cavity F3, and the orthographic projection of the third detection structure Y3 on the isolation layer 3 does not overlap with the orthographic projection of the first thermal deformation structure 12 on the isolation layer 3; the second sensor 2 also includes a fourth detection structure Y4, which is arranged on a side of the second electrode layer 21 away from the fourth closed sub-cavity F4, and the orthographic projection of the fourth detection structure Y4 on the isolation layer 3 does not overlap with the orthographic projection of the second thermal deformation structure 22 on the isolation layer 3; the orthographic projections of the third detection structure Y3 and the fourth detection structure Y4 on the isolation layer 3 overlap.

[0255] In an exemplary embodiment, the materials of the third detection structure Y3 and the fourth detection structure Y4 may include piezoelectric materials or piezoresistive materials, wherein both piezoelectric materials and piezoresistive materials can generate changes in current under the action of pressure, and the effect of pressure is intuitively reflected in the sensing device as a change in the deflection of the first electrode layer 11 or the second electrode layer 21.

[0256] In an exemplary embodiment, the orthographic projections of the third detection structure Y3 and the fourth detection structure Y4 on the isolation layer 3 overlap.

[0257] Exemplarily, the third detection structure Y3 and the fourth detection structure Y4 have the same structure and material.

[0258] In an exemplary embodiment, the volumes of the cavity structure in the third enclosed sub-cavity F3 excluding the first thermal deformation structure 12 and the cavity structure in the fourth enclosed sub-cavity F4 excluding the second thermal deformation structure 22 are substantially the same; and the first thermal deformation structure 12 and the second thermal deformation structure 22 are the same.

[0259] In an exemplary embodiment, the first sensor 1 and the second sensor 2 in the sensing device shown in FIG. 12 and FIG. 13 are symmetrically arranged.

[0260] The following describes the working principle of the sensor device, taking the structure of FIG. 12 or FIG. 13 as an example. The sensor device shown in FIG. 12 or FIG. 13 can be used to simultaneously detect acceleration and temperature, can be used as a motion sensor, and can be applied to devices such as accelerometers or gyroscopes. The specific working principle is as follows:

[0261] Taking the condition of heating acceleration (for example, acceleration in the OA direction) as an example, when the temperature rises, the height (d) of the first thermal deformation structure 12 and the second thermal deformation structure 22 in the direction perpendicular to the plane where the isolation layer 3 is located increases, that is, the first thermal deformation structure 12 supports the first electrode layer 11 to deform in the direction away from the isolation layer 3, and the second thermal deformation structure 22 supports the first electrode layer 11 to deform in the direction away from the isolation layer 3. The third detection structure Y3 and the fourth detection structure Y4 are respectively subjected to forces in opposite directions. The relationship between the force applied to the detection structure and the change in deflection is f=λ*△y, △y is the change in deflection, and λ is a constant; the third detection structure and the fourth detection structure Y4 undergo changes in deflection in opposite directions, and the deflection change caused by the third detection structure Y3 is -△y t , the deflection change of the fourth detection structure Y4 is +△y t .

[0262] When the acceleration of the sensing device increases along the OA direction, the third detection structure Y3 and the fourth detection structure Y4 are deformed toward the AO direction due to the action of motion resistance (such as air resistance). At this time, the deflection change of the third detection structure Y3 is +△y a , the deflection change of the fourth detection structure Y4 is +△y a .

[0263] According to the above analysis, under the conditions of heating and acceleration, the total change in the deflection of the first sensor 1 is △y1 = △y a -△y t Formula (22): The total change in deflection of the second sensor 2 △y2=△y a +△y t Formula (23);

[0264] According to the relationship between the total change in deflection and the measured current △y=a*I, a is a constant, then:

[0265] △y1=a*△I1, △y2=a*△I2; then: △y a -△y t =a*△I1 Formula (24); △y a +△y t =a*△I2 Formula (25);

[0266] The sum of the above formula (24) and formula (25) is: 2△y a =a*△I1+a*△I2 formula (26);

[0267] The sum of the above formula (24) and formula (25) is: 2△y t=a*△I2-a*△I1 Formula (27)

[0268] The above I1 is the current measured by the first sensor 1, and the above I2 is the current measured by the second sensor 2. According to formula (26) and formula (27), △y can be calculated. a and △y t ; Among them, △y t It can be called the correlation value of the first parameter (temperature), △y a It can be called the relevant value of the second parameter (acceleration), and then according to △y t The temperature value is calculated based on the preset relationship with the temperature. a The pressure value is calculated in relation to the preset acceleration.

[0269] In at least one sensing device provided by an embodiment of the present application, the second parameter includes acceleration.

[0270] In at least one sensing device provided in an embodiment of the present application, the first thermal deformation structure 12 and the second thermal deformation structure 22 are made of the same material and have the same structure.

[0271] In at least one sensing device provided by an embodiment of the present application, the orthographic projections of the first thermal deformation structure 12 and the second thermal deformation structure 22 on the isolation layer 3 overlap.

[0272] In at least one sensing device provided in an embodiment of the present application, as shown in FIG16 , the first thermal deformation structure 12 and the second thermal deformation structure 22 each include a plurality of thermal deformation patterns, and the distance between any two adjacent thermal deformation patterns is equal.

[0273] For example, for the first thermal deformation structure 12 and the second thermal deformation structure 22 , the spacing d1 between two adjacent thermal deformation patterns arranged along the row direction is equal to the spacing d2 between two adjacent thermal deformation patterns arranged along the column direction.

[0274] Exemplarily, the distance d3 between the thermal deformation pattern near the edge of the cavity structure and the cavity structure along the row direction is equal to the distance d4 between the thermal deformation pattern and the cavity structure along the column direction.

[0275] In the first sensor 1 , the distance d3 between the thermal deformation pattern in the first thermal deformation structure 12 near the edge of the first cavity Q1 and the first cavity Q1 along the row direction is equal to the distance d4 between the thermal deformation pattern and the first cavity Q1 along the column direction.

[0276] In the second sensor 2 , the distance d3 between the thermal deformation pattern in the second thermal deformation structure 22 near the edge of the second cavity Q2 along the row direction and the distance d4 between the thermal deformation pattern and the second cavity Q2 along the column direction is equal.

[0277] In the embodiment of the present application, by setting the distance between any two adjacent thermal deformation patterns to be equal, the distribution uniformity of the first thermal deformation structure 12 in the first cavity Q1 and the distribution uniformity of the second thermal deformation structure 22 in the second cavity Q2 can be improved, thereby improving the detection sensitivity and accuracy of the thermal deformation structure to temperature.

[0278] In at least one sensing device provided by an embodiment of the present application, the material of the first thermal deformation structure 12 and the second thermal deformation structure 22 includes a thermoelastic material.

[0279] The first thermal deformation structure 12 and the second thermal deformation structure 22 can undergo thermal deformation (or thermal expansion) when the temperature rises.

[0280] For example, the thermoelastic material may also include a network polymer material with relatively high thermoelasticity, a thermoplastic elastomer, such as a polyolefin elastomer, rubber, and the like.

[0281] In at least one sensing device provided by an embodiment of the present application, the second sensor 2 is embedded in the substrate 10 , and the isolation layer 3 covers the substrate 10 .

[0282] The sensing device also includes a plurality of connecting electrodes for transmitting electrical signals, such as the connecting electrode E1, the connecting electrode E2 and the connecting electrode E3 shown in FIG2 , wherein the connecting electrode E1 is electrically connected to the first electrode layer 11, the connecting electrode E2 is electrically connected to the second electrode layer 21, and the connecting electrode E3 is electrically connected to the common electrode layer 4; of course, the sensing device also includes other structures and components. This specification only introduces structures and components related to the invention. For other structures and components included in the sensing device, please refer to the introduction in the relevant technology.

[0283] The embodiments of the present application provide a method for preparing a sensor device. Taking the sensor device shown in FIG3 as an example, the specific preparation method is as follows:

[0284] 1. As shown in FIG17 , an isolation layer 3, a second insulating layer IS2, a common electrode layer 4, a first insulating layer IS1 and a sacrificial layer SL are sequentially formed on a substrate 1;

[0285] 2. As shown in FIG18 , the sacrificial layer SL is patterned to obtain a plurality of pores on the sacrificial layer SL;

[0286] The material of the sacrificial layer SL may be an inorganic material, such as silicon nitride, silicon oxide, or silicon oxynitride. The sacrificial layer SL may be patterned by an etching process.

[0287] 3. As shown in FIG19 , a first thermal deformation structure 12 is formed in the plurality of pores of the sacrificial layer SL;

[0288] 4. As shown in FIG. 20 , a third insulating film IS3 ′ is formed;

[0289] 5. As shown in FIG. 21 , the third insulating film IS3 ′ is patterned to obtain a third insulating layer IS3 , a first support portion Z1 , and a hollowed-out etching hole KV on the third insulating layer IS3 ; wherein the third insulating layer IS3 and the first support portion Z1 are an integrated structure;

[0290] 6. As shown in FIG21 , the etching liquid is released through the etching hole KV to form a first cavity Q1;

[0291] 7. As shown in FIG22 , a first electrode layer 11 is formed and the hollowed-out etched hole KV is filled at the same time to form an etched hole T (the etched hole after filling is marked as T, and the etched hole before filling is marked as KV);

[0292] 8. As shown in FIG. 22 , a fourth insulating layer IS4 and connecting electrodes E1 and E3 are formed in sequence;

[0293] 9. As shown in FIG23 , a hollow structure is formed on the substrate 10 , and a fifth insulating layer IS5 is formed in the hollow structure;

[0294] 10. As shown in FIG. 24 , an insulating film is formed on a side of the fifth insulating layer IS5 away from the isolation layer 3 , and the insulating film is patterned to obtain a sixth insulating layer IS6 , a second support portion Z2 , and an etching hole KV provided on the sixth insulating layer IS6 . Etching liquid is released through the etching hole KV to form a second enclosed sub-cavity F2 .

[0295] 11. As shown in FIG24 , a second electrode layer 21 is formed and the hollow etched hole KV is filled at the same time;

[0296] 12. As shown in FIG. 25 , a sacrificial layer S2 is formed and patterned to obtain a plurality of pores on the sacrificial layer S2 , and a second thermal deformation structure 22 is formed in the pores;

[0297] 13. As shown in FIG. 25 , a seventh insulating layer IS7 having a plurality of first via holes Via1 is formed, and etching liquid is released through the first via holes Via1 to form a first open sub-cavity K1 as shown in FIG. 3 .

[0298] The preparation method of the above-mentioned sensor device also includes other processes and steps. Here, only the preparation method of the structure and components related to the invention point is introduced. The specific preparation process details of the sensor device can also be referred to the introduction in the relevant technology.

[0299] It should be noted that the preparation methods of other sensor devices are similar to the sensor device shown in FIG3 and will not be described in detail.

[0300] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. A sensing device, in, include: An isolation layer and a first sensor and a second sensor respectively located on both sides of the isolation layer, wherein the orthographic projections of the first sensor and the second sensor on the isolation layer overlap; The first sensor comprises a first cavity, a first electrode layer and a first thermal deformation structure, wherein the first electrode layer is arranged on a side of the first cavity away from the isolation layer, and the first thermal deformation structure is arranged in the first cavity and in contact with two inner walls opposite to the first cavity; The second sensor includes a second cavity, a second electrode layer and a second thermal deformation structure. The second electrode layer is arranged on a side of the isolation layer away from the first cavity. The second thermal deformation structure is arranged in the second cavity and contacts with two inner walls opposite to the second cavity.

2. The sensor device according to claim 1, in, The first cavity includes a first closed sub-cavity, the second cavity includes a second closed sub-cavity and a first open sub-cavity, and the first open sub-cavity is located on a side of the second closed sub-cavity away from the isolation layer; The second thermal deformation structure is disposed in the first open sub-cavity and contacts two inner walls opposite to the first open sub-cavity, and the second electrode layer is disposed on a side of the second closed sub-cavity away from the isolation layer.

3. The sensor device according to claim 2, in, The volume of the hollow structure in the first closed sub-cavity is substantially equal to the volume of the hollow structure in the second closed sub-cavity.

4. The sensor device according to claim 2, in, The second electrode layer is disposed between the second closed sub-cavity and the first open sub-cavity; Alternatively, the second electrode layer is disposed in the first open sub-cavity at one side close to the second closed sub-cavity.

5. The sensor device according to claim 1, in, The first cavity includes a second open sub-cavity, the second cavity includes a third open sub-cavity and a fourth open sub-cavity, and the third open sub-cavity is arranged on a side of the fourth open sub-cavity away from the isolation layer; The second thermal deformation structure is disposed in the third open sub-cavity and is connected to the third Two opposite inner walls of the open sub-cavity are in contact with each other, and the second electrode layer is disposed on one side of the third open sub-cavity close to the fourth open sub-cavity and in contact with the second thermal deformation structure.

6. The sensor device according to claim 2 or 5, in, The sensor device further comprises a common electrode layer, a first insulating layer and a second insulating layer; the first insulating layer is located on a side of the common electrode layer close to the first cavity, and the second insulating layer is located between the common electrode layer and the insulating layer; The common electrode layer is disposed between the first cavity and the second cavity. The first electrode layer and the common electrode layer serve as two electrodes of a first capacitor respectively, and the second electrode layer and the common electrode layer serve as two electrodes of a second capacitor respectively.

7. The sensor device according to claim 6, in, The first sensor also includes a first supporting portion, a third insulating layer and a fourth insulating layer. The first supporting portion is located between the first insulating layer and the third insulating layer and is arranged around the first cavity. The fourth insulating layer covers the first electrode layer. The first thermal deformation structure is in direct contact with the first insulating layer and the third insulating layer respectively.

8. The sensor device according to claim 7, in, In the case where the first cavity includes a first closed sub-cavity, and the second cavity includes a second closed sub-cavity and a first open sub-cavity, the second thermal deformation structure is disposed in the first open sub-cavity and contacts two inner walls opposite to the first open sub-cavity; The second sensor further includes a fifth insulating layer, a sixth insulating layer, a seventh insulating layer, a second supporting portion and a third supporting portion, wherein the second supporting portion is located between the fifth insulating layer and the sixth insulating layer and is arranged around the second closed sub-cavity, the third supporting portion is located between the second electrode layer and the seventh insulating layer and is arranged around the first open sub-cavity, and the second electrode layer is arranged in the first open sub-cavity and is located on a side of the sixth insulating layer away from the second closed sub-cavity; The second thermal deformation structure is in direct contact with the second electrode layer and the seventh insulating layer respectively. A plurality of first through holes are provided on the seventh insulating layer. The orthographic projection of the second thermal deformation structure on the isolation layer and the area enclosed by the orthographic projection of the outer contour of the first through hole on the isolation layer do not overlap with each other.

9. The sensor device according to claim 7, in, In the case where the first cavity includes a second open sub-cavity, and the second cavity includes a third open sub-cavity and a fourth open sub-cavity, the second thermal deformation structure is disposed in the third open sub-cavity and contacts two inner walls opposite to the third open sub-cavity; The second sensor further includes a fifth insulating layer, a sixth insulating layer, a seventh insulating layer, a second supporting portion and a third supporting portion, wherein the second supporting portion is located between the fifth insulating layer and the sixth insulating layer and is arranged around the fourth open sub-cavity, the third supporting portion is located between the second electrode layer and the seventh insulating layer and is arranged around the third open sub-cavity, and the second electrode layer is arranged in the third open sub-cavity and is located on a side of the sixth insulating layer away from the fourth open sub-cavity; The second thermal deformation structure is in direct contact with the second electrode layer and the seventh insulating layer respectively, a plurality of first through holes are arranged on the seventh insulating layer, a plurality of second through holes are arranged on the sixth insulating layer, and the second through holes penetrate the second electrode layer, and the orthographic projection of the second thermal deformation structure on the isolation layer does not overlap with an area enclosed by an orthographic projection of an outer contour of the first through hole and an outer contour of the second through hole on the isolation layer.

10. The sensor device according to claim 9, in, The first sensor includes a plurality of third through holes, which sequentially penetrate the fourth insulating layer, the first electrode layer and the third insulating layer, and the orthographic projection of the first thermal deformation structure on the isolation layer and the area enclosed by the orthographic projection of the outer contour of the third through hole on the isolation layer do not overlap with each other.

11. The sensor device according to claim 2 or 3, in, The first sensor also includes a first detection structure; The first sensor further includes a first insulating layer, a first supporting portion, a third insulating layer and a fourth insulating layer, wherein the first insulating layer is located on a side of the isolation layer close to the first closed sub-cavity, the first supporting portion is located between the first insulating layer and the third insulating layer and is arranged around the first closed sub-cavity, the fourth insulating layer covers the first electrode layer, and the first thermal deformation structure is in direct contact with the first insulating layer and the third insulating layer respectively; The first detection structure is located on a side of the first electrode layer away from the first closed sub-cavity, and the orthographic projection of the first detection structure on the isolation layer is parallel to the first thermal variable The orthographic projections of the shaped structures on the isolation layer do not overlap with each other.

12. The sensor device according to claim 11, in, The second sensor also includes a second detection structure; The second sensor further includes a fifth insulating layer, a sixth insulating layer, a seventh insulating layer, a second supporting portion and a third supporting portion, the second supporting portion is located between the fifth insulating layer and the sixth insulating layer and is arranged around the second closed sub-cavity, the third supporting portion is located between the second electrode layer and the seventh insulating layer and is arranged around the first open sub-cavity, the second electrode layer is arranged in the first open sub-cavity and is located on a side of the sixth insulating layer away from the second closed sub-cavity, and the second thermal deformation structure is in direct contact with the second electrode layer and the seventh insulating layer respectively; The second detection structure is disposed in the first open sub-cavity and contacts the second electrode layer, and an orthographic projection of the second detection structure on the isolation layer does not overlap with an orthographic projection of the second thermal deformation structure on the isolation layer.

13. The sensor device according to any one of claims 1 to 5, 7 to 10, and 12, in, The second parameter includes pressure.

14. The sensor device according to claim 1, in, The first cavity includes a third closed sub-cavity, and the second cavity includes a fourth closed sub-cavity; The first electrode layer is located at a side of the third closed sub-cavity away from the isolation layer, and the second electrode layer is located at a side of the fourth closed sub-cavity away from the isolation layer.

15. The sensor device according to claim 14, in, The first sensor further includes a first insulating layer, a third insulating layer, a fourth insulating layer and a first supporting portion, wherein the first insulating layer covers the isolation layer, the first supporting portion is located between the first insulating layer and the third insulating layer and is arranged around the third closed sub-cavity; the first thermal deformation structure is in contact with the first insulating layer and the third insulating layer respectively, and the fourth insulating layer is located on a side of the first electrode layer away from the third insulating layer; The second sensor further includes a fifth insulating layer, a sixth insulating layer, a seventh insulating layer and a second supporting portion, the isolation layer covers the fifth insulating layer, the second supporting portion is located between the fifth insulating layer and the sixth insulating layer and is arranged around the fourth closed sub-cavity; the second thermal deformation structure is in contact with the fifth insulating layer and the sixth insulating layer respectively, The second electrode layer is located between the sixth insulating layer and the seventh insulating layer.

16. The sensor device according to claim 15, in, The first sensor further includes a first sliding electrode, which is disposed in the third closed sub-cavity and overlaps with the orthographic projection of the first electrode layer on the isolation layer, and the first sliding electrode is configured to be able to slide along a first direction, which is a direction perpendicular to the plane where the isolation layer is located; The second sensor further includes a second sliding electrode, which is disposed in the fourth closed sub-cavity and overlaps with the orthographic projection of the second electrode layer on the isolation layer. The first sliding electrode and the second sliding electrode have the same sliding direction.

17. The sensor device according to claim 16, in, The orthographic projection of the first sliding electrode on the isolation layer does not overlap with the orthographic projection of the first thermal deformation structure on the isolation layer, and the orthographic projection of the second sliding electrode on the isolation layer does not overlap with the orthographic projection of the second thermal deformation structure on the isolation layer; The first sliding electrode and the second sliding electrode each include a mass block and at least one extended electrode, the mass block is connected to the extended electrode, the orthographic projection of the extended electrode on the isolation layer overlaps with the orthographic projection of the first electrode layer or the second electrode layer on the isolation layer, the mass block of the first sliding electrode is slidably connected to the first supporting portion, and the mass block of the second sliding electrode is slidably connected to the second supporting portion.

18. The sensor device according to claim 14, in, The second cavity further comprises a fifth open sub-cavity, and the fifth open sub-cavity is located on a side of the fourth closed sub-cavity away from the isolation layer; The first sensor further includes a first insulating layer, a third insulating layer, a fourth insulating layer and a first supporting portion, wherein the first insulating layer covers the isolation layer, the first supporting portion is located between the first insulating layer and the third insulating layer and is arranged around the third closed sub-cavity; the first thermal deformation structure is in contact with the first insulating layer and the third insulating layer respectively, and the fourth insulating layer is located on a side of the first electrode layer away from the third insulating layer; The second sensor further includes a fifth insulating layer, a sixth insulating layer, a seventh insulating layer, a second supporting portion and a third supporting portion, wherein the isolation layer covers the fifth insulating layer, the second supporting portion is located between the fifth insulating layer and the sixth insulating layer and surrounds the fourth closed A sub-cavity is set, the second electrode layer is located in the fifth open sub-cavity and contacts the sixth insulating layer, the third supporting portion is located between the second electrode layer and the seventh insulating layer and is set around the fifth open sub-cavity; the second thermal deformation structure is located in the fifth open sub-cavity and contacts the second electrode layer and the seventh insulating layer.

19. The sensor device according to claim 18, in, The first sensor comprises a first sliding electrode, the first sliding electrode is arranged in the third closed sub-cavity and overlaps with the orthographic projection of the first electrode layer on the isolation layer, the first sliding electrode is configured to be able to slide along a first direction, and the first direction is a direction parallel to the plane where the isolation layer is located; The second sensor further includes a second sliding electrode, which is disposed in the fourth closed sub-cavity and overlaps with the orthographic projection of the second electrode layer on the isolation layer. The first sliding electrode and the second sliding electrode have the same sliding direction.

20. The sensor device according to claim 19, in, The orthographic projection of the first sliding electrode on the isolation layer does not overlap with the orthographic projection of the first thermal deformation structure on the isolation layer, and the orthographic projection of the second sliding electrode on the isolation layer does not overlap with the orthographic projection of the second thermal deformation structure on the isolation layer; The first sliding electrode and the second sliding electrode each include a mass block and at least one extended electrode, the mass block is connected to the extended electrode, the orthographic projection of the extended electrode on the isolation layer overlaps with the orthographic projection of the first electrode layer or the second electrode layer on the isolation layer, the mass block of the first sliding electrode is slidingly connected to the first insulating layer, and the mass block of the second sliding electrode is slidingly connected to the sixth insulating layer; a plurality of first through holes are provided on the seventh insulating layer, and an orthographic projection of the second thermal deformation structure on the isolation layer and an area enclosed by an orthographic projection of an outer contour of the first through hole on the isolation layer do not overlap with each other.

21. The sensor device according to claim 17 or 20, in, The first sliding electrode and the second sliding electrode are the same; In the case where the first direction is a direction perpendicular to the plane where the isolation layer is located, the size of the mass block along the direction perpendicular to the plane where the isolation layer is located is smaller than the size of the cavity where the mass block is located along the direction perpendicular to the plane where the isolation layer is located; In the first direction which is parallel to the plane where the isolation layer is located, the dimensions of the first sliding electrode and the second sliding electrode in the direction parallel to the plane where the isolation layer is located are both smaller than the dimensions of the cavity in which they are located in the direction parallel to the plane where the isolation layer is located.

22. The sensing device according to claim 15, in, The first sensor further includes a third detection structure, which is disposed on a side of the first electrode layer away from the third closed sub-cavity, and an orthographic projection of the third detection structure on the isolation layer does not overlap with an orthographic projection of the first thermal deformation structure on the isolation layer; The second sensor also includes a fourth detection structure, which is arranged on a side of the second electrode layer away from the fourth closed sub-cavity, and the orthographic projection of the fourth detection structure on the isolation layer does not overlap with the orthographic projection of the second thermal deformation structure on the isolation layer; the orthographic projections of the third detection structure and the fourth detection structure on the isolation layer overlap.

23. The sensor device according to any one of claims 14 to 22, in, The second parameter includes acceleration.

24. The sensing device according to claim 1, in, The first thermal deformation structure and the second thermal deformation structure are made of the same material and structure.

25. The sensor device according to claim 24, in, The orthographic projections of the first thermally deformable structure and the second thermally deformable structure on the isolation layer overlap.

26. The sensor device according to claim 25, in, The first thermal deformation structure and the second thermal deformation structure each include a plurality of thermal deformation patterns, and the distance between any two adjacent thermal deformation patterns is equal.

27. The sensing device according to claim 24, in, The materials of the first thermal deformation structure and the second thermal deformation structure include thermoelastic material.

28. The sensing device according to claim 1, in, The second sensor is embedded in the substrate, and the isolation layer covers the substrate.

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