Driving control circuit and power supply system

Abstract

The present invention provides a driving control circuit and a power supply system. The driving control circuit comprises: a first driving unit, a first control unit and a power unit, wherein the power unit is realized by using a power module and comprises a first power transistor parallel structure. The first driving unit is used for providing a first driving signal. The first control unit comprises a first MOS transistor and a second MOS transistor, which are connected in series and controlled by the first driving signal, and is used for carrying out on-off control on the first MOS transistor and the second MOS transistor according to the first driving signal so as to drive the first power transistor parallel structure to be turned on or off. The present invention solves problems, such as high power consumption, low efficiency, and poor stability, of existing driving control modes.

Description

Drive control circuit and power supply system

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to the Chinese patent application filed with the China Patent Office on November 13, 2023, with application number 202311515510.8 and invention name “Drive Control Circuit and Power Supply System”, the entire contents of which are incorporated by reference into this application. Technical Field

[0003] The present invention relates to the technical field of electronic circuit design, and in particular to a drive control circuit and a power supply system. Background Art

[0004] With the development of new energy, more and more new energy vehicles have emerged in recent years, which has led to rapid development in the application of power devices.

[0005] At present, new energy vehicles use a three-phase full-bridge drive control method. As the power increases, the driving capability of power devices also needs to become stronger. However, the existing solution of using driver chips to control transistors for push-pull output and ultimately drive a single-tube parallel power tube structure has many disadvantages such as high power consumption, low efficiency, and poor stability.

[0006] In view of this, providing a new drive control method to overcome the above-mentioned shortcomings is a technical problem that those skilled in the art are eager to solve.

[0007] Summary of the Invention

[0008] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a drive control circuit and a power supply system to solve the problems of the existing drive control method such as high power consumption, low efficiency, poor stability and many other shortcomings.

[0009] To achieve the above-mentioned and other related objectives, the present invention provides a drive control circuit, comprising:

[0010] A first drive unit, a first control unit and a power unit, wherein the power unit is implemented by a power module and includes a first power tube parallel structure;

[0011] The first driving unit is used to provide a first driving signal;

[0012] The first control unit includes a first MOS transistor and a second MOS transistor, which are connected in series and controlled by the first drive signal. The first control unit is used to control the switching of the first MOS transistor and the second MOS transistor according to the first drive signal to drive the first power tube parallel structure to turn on or off.

[0013] Optionally, the first driving unit is implemented using a single-channel driver chip, and is configured to convert the first input signal into the first driving signal output.

[0014] Optionally, the first driving unit further includes a first capacitor, a second capacitor, a first resistor, a first diode and a second diode;

[0015] The single-channel driver chip has a low-side power supply terminal connected to the operating voltage and connected to the reference ground via the first capacitor, an input terminal connected to the first input signal, a common ground terminal connected to the reference ground, a high-side floating ground terminal connected to the negative terminal of the first diode, an output terminal outputting the first drive signal via the first resistor, and a high-side floating power supply terminal connected to the negative terminal of the second diode and connected to the negative terminal of the first diode via the second capacitor;

[0016] The positive end of the first diode is connected to the reference ground, and the positive end of the second diode is connected to the operating voltage.

[0017] Optionally, the first driving unit further includes a third capacitor, a second resistor, a third resistor and a third diode;

[0018] The current detection end of the single-channel driver chip is connected to the negative end of the first diode via the third capacitor, the second resistor and the third resistor are connected in series between the positive end of the third diode and the negative end of the first diode, and their connection node is connected to the current detection end, and the negative end of the third diode is connected to the drain end of the first power tube parallel structure.

[0019] Optionally, the first control unit further includes a fourth resistor, a fifth resistor and a fourth diode;

[0020] The first MOS transistor and the second MOS transistor are connected in series between the high-side floating power supply terminal and the high-side floating ground terminal of the single-channel driver chip, and the gate terminals are connected to each other and connected to the first drive signal;

[0021] A first end of the fourth resistor is connected to the connection node between the first MOS transistor and the second MOS transistor, and a second end is connected to the control end of the parallel structure of the first power transistor;

[0022] The negative end of the fourth diode is connected to the connection node between the first MOS transistor and the second MOS transistor, and the positive end is connected to the control end of the parallel structure of the first power transistors via the fifth resistor.

[0023] Optionally, the first control unit further includes a sixth resistor, a first end of which is connected to a connection node between the first MOS transistor and the second MOS transistor, and a second end of which is connected to a positive end of a third diode.

[0024] Optionally, the drive control circuit also includes a first voltage regulator tube, which is arranged in a one-to-one correspondence with the first power tube in the parallel structure of the first power tube; wherein the positive end of the first voltage regulator tube is connected to the source end of the first power tube, and the negative end is connected to the control end of the first power tube.

[0025] Optionally, the power module further includes a second power tube parallel structure, wherein the first power tube parallel structure and the second power tube parallel structure are connected in series between the positive terminal of the battery and the reference ground; the drive control circuit further includes a second drive unit and a second control unit;

[0026] The second driving unit is used to provide a second driving signal;

[0027] The second control unit includes a third MOS transistor and a fourth MOS transistor, which are connected in series and controlled by the second drive signal, and is used to control the switching of the third MOS transistor and the fourth MOS transistor according to the second drive signal to drive the second power tube parallel structure to turn on or off.

[0028] Optionally, the second driving unit has the same circuit structure as the first driving unit, and the second control unit has the same circuit structure as the first control unit.

[0029] Optionally, the drive control circuit also includes a second voltage regulator tube, which is arranged in a one-to-one correspondence with the second power tube in the parallel structure of the second power tube; wherein the positive end of the second voltage regulator tube is connected to the source end of the second power tube, and the negative end is connected to the control end of the second power tube.

[0030] The present invention also provides a power supply system, which includes the drive control circuit described above.

[0031] As described above, the drive control circuit and power supply system of the present invention utilize MOS transistors for push-pull output, which reduces drive losses, enhances drive capability, improves overall system efficiency, and facilitates increased switching response speed. The use of an integrated power module improves individual transistor consistency and enhances circuit stability. Furthermore, parasitic inductance is significantly reduced, shortening the switching time of the power transistors, reducing switching losses, and improving overall system efficiency. Furthermore, because the parasitic inductance is significantly reduced, the peak voltage is also relatively reduced, eliminating the need for RC snubber circuits at the drain and source terminals of the power transistors, thereby reducing circuit losses, improving efficiency, and saving costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] FIG1 is a schematic diagram showing a driving control circuit.

[0033] FIG. 2 is a schematic diagram showing a driving control circuit according to the first embodiment.

[0034] FIG3 is a schematic diagram showing a driving control circuit according to a second embodiment.

[0035] Component Reference Numerals 100 Driving control circuit 110a First driving unit 111a First single-channel driver chip 110b Second driving unit 111b Second single-channel driver chip 120a First control unit 120b Second control unit 130 Power unit 131 First power tube parallel structure 132 Second power tube parallel structure

[0036] 140 microcontroller DETAILED DESCRIPTION

[0037] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present invention.

[0038] Please refer to Figures 1 to 3. It should be noted that the figures provided in this embodiment are merely schematic illustrations of the basic concept of the present invention. Therefore, the figures only show components relevant to the present invention and are not drawn according to the number, shape, and size of components in actual implementation. In actual implementation, the shape, number, and proportion of each component may be varied arbitrarily, and the component layout may also be more complex.

[0039] Figure 1 shows a drive control circuit, including a microcontroller, two IR2127S driver chips, an upper tube push-pull structure consisting of transistors Q1 and Q2, a lower tube push-pull structure consisting of transistors Q3 and Q4, an upper power tube structure in the form of single-tube parallel connection consisting of power tubes Q5, Q6, and Q7, a lower power tube structure in the form of single-tube parallel connection consisting of power tubes Q8, Q9, and Q10, first capacitors C1 to C8, first resistors R1 to R20, and first diodes D1 to D8. The connection relationship of each component is shown in Figure 1.

[0040] The drive control method of the upper power tube structure and the lower power tube structure is the same. Taking the drive control of the upper power tube structure as an example; the microcontroller sends a PWM signal (such as PWM_H) and drives the transistors Q1 and Q2 to turn on or off through the IR2127S driver chip, thereby driving the power tubes Q5, Q6 and Q7 to turn on or off.

[0041] When PWM_H is high, the driving signal HO output by the IR2127S driver chip is high, that is, the potential at point a is high. At this time, the transistor Q1 is turned on, the transistor Q2 is turned off, and the potential at point b is high. The power tubes Q5, Q6, and Q7 are driven to turn on respectively through the fourth resistor R4.

[0042] When PWM_H is at a low potential, the drive signal HO output by the IR2127S driver chip is at a low potential, that is, the potential at point a is at a low potential. Since the power tubes Q5, Q6 and Q7 are in the on state, the potential at point b is at a high potential. At this time, the transistor Q2 is turned on and the transistor Q1 is turned off. The gate-source charges of the power tubes Q5, Q6 and Q7 are respectively discharged through their respective drive resistors, the fourth resistor R4, the fifth resistor R5, the fourth diode D4 and the transistor Q2 to complete the shutdown.

[0043] During the power tube opening process, the loss of transistor Q1 satisfies the formula P Q1 =R1×I be +0.7×I ce For high-power single-tube parallel connection, the driving current needs to be at least 3A. Taking the driving current of 3A as an example, I ce =3A, I be =0.04×I ce =0.04×3A=0.12A, R1=20Ω, then P Q1 =20×0.12+0.7×3=4.5W; During the shutdown process of the power tube, the instantaneous current generally reaches 5A, so the loss of transistor Q2 P Q2 =0.7×5=3.5W; Thus, during a switching process of the power tube, the instantaneous loss of the push-pull output of transistors Q1 and Q2 is 8W; where R1 is the resistance value of the first resistor, I be is the base-emitter current of transistor Q1, I ce is the collector-emitter current of transistor Q1. In addition, the single-tube parallel solution requires adding drive resistors (such as R13-R15) at the gate end of each power tube, and the drive resistors will also cause some losses due to the drive current during the turn-on process.

[0044] At the same time, during the power tube opening process, combined with the voltage and current changes of the power tube, it can be seen that current is generated before the drain-source voltage of the power tube drops to zero, and this overlapping area will produce turn-on loss, and its turn-on loss satisfies the formula Similarly, during the power tube shutdown process, combined with the voltage and current changes of the power tube, it can be seen that the drain-source voltage begins to rise before the current of the power tube drops to zero, and this overlapping area will produce turn-off loss, and its turn-off loss satisfies the formula Among them, P on is the turn-on loss, P off is the turn-off loss, f sw is the switching frequency of the power tube, V ds(off_begin) is the drain-source voltage when the power tube is turned on, V ds(off_end) is the drain-source voltage when the power tube is turned off, I d(off_on) is the current when the power tube is turned on, I d(on_off) is the current when the power tube is turned off, and t(x) is the time when the power tube is turned on.

[0045] From the above two formulas, we can see that when V ds and I d When the switching time is constant, the shorter the switching time, the smaller the switching loss. However, short switching time will cause a new problem, namely the breakdown (BV) problem of the power tube. The analysis is as follows: switching will cause the current change rate problem, that is, the di / dt problem, and the control circuit board composed of the power tube structure and its drive control part has its own parasitic inductance. Therefore, during the switching process, the V ds A peak voltage will be generated, satisfying the formula V 尖 峰 =L 寄生 ×di / dt. Peak voltage V 尖峰 Mainly related to parasitic inductance L 寄生 Related to the current change rate di / dt, for the single-tube parallel solution, the parasitic inductance L 寄生 Large (in the single-tube parallel solution, due to the setting of the driving resistor and the RC absorption circuit composed of the nineteenth resistor R19 and the seventh capacitor C7, the line from the battery positive terminal BAT+ to the drain terminal of the upper power tube structure is long, resulting in a large parasitic inductance). In order not to increase the peak voltage V 尖峰 , it is necessary to reduce the current change rate di / dt, at this time the current I d It corresponds to the instantaneous current, and its value is difficult to reduce. Therefore, the only way is to increase the turn-on and turn-off time of the power tube (corresponding to dt), but this will increase the switching loss.

[0046] Therefore, the above-mentioned drive control circuit has the following disadvantages: 1) The triode is a current-type driving device with high power consumption; 2) The power tube structure adopts a single-tube parallel scheme, and there are consistency differences among the power tubes, resulting in poor circuit stability; 3) The single-tube parallel scheme requires adding a driving resistor at the gate of each power tube. Due to the unequal length of the driving line and the discreteness of the driving resistor, the working states of the power tubes may be quite different, resulting in poor circuit stability; 4) In the single-tube parallel scheme, the parasitic inductance between the power tube structure and the control circuit board is large. In order to avoid the power tube from being broken down, the turn-on and turn-off time of the power tube needs to be increased, which leads to increased switching loss. At the same time, the setting of the RC absorption circuit not only increases the circuit loss, but also reduces the circuit efficiency; 5) The circuit power is large, and the reference ground will float due to excessive current, causing the power tube to be turned on by mistake, causing the upper and lower power tubes to be directly connected, resulting in the burning of the power tube.

[0047] In order to solve the various technical problems existing in the driving control circuit shown in FIG1 , the applicant has proposed a driving control circuit 100 described in an embodiment of the present invention.

[0048] Example 1

[0049] As shown in FIG. 2 , this embodiment provides a driving control circuit 100 , which includes a first driving unit 110 a , a first control unit 120 a , and a power unit 130 ; further, it also includes a microcontroller 140 .

[0050] The first driving unit 110 a is configured to provide a first driving signal HO.

[0051] As an example, the first driving unit 110a is implemented using a single-channel driver chip (such as the IR2127S chip) to convert the first input signal PWM_H into a first driving signal HO for output; in fact, when the first input signal PWM_H is at a high level, the first driving signal HO is at a high level, and when the first input signal PWM_H is at a low level, the first driving signal HO is at a low level.

[0052] It should be noted that in order to distinguish the single-channel driver chip in this embodiment from that in the second embodiment, the single-channel driver chip in this embodiment is referred to as the first single-channel driver chip 111a. All single-channel driver chips appearing below in this embodiment are represented by the first single-channel driver chip 111a.

[0053] In an application, the first single-channel driver chip 111a is generally configured with peripheral matching components. In one possible implementation, the first driver unit 110a further includes a first capacitor C1, a second capacitor C2, a first resistor R1, a first diode D1, and a second diode D2. The low-side power supply terminal VCC of the first single-channel driver chip 111a is connected to an operating voltage (e.g., 15V) and to a reference ground via the first capacitor C1. The input terminal IN is connected to a first input signal PWM_H, the common ground terminal COM is connected to a reference ground, the high-side floating ground terminal VS is connected to the negative terminal of the first diode D1, the output terminal outputs the first drive signal HO via the first resistor R1, the high-side floating power supply terminal VB is connected to the negative terminal of the second diode D2 and to the negative terminal of the first diode D1 via the second capacitor C2. The positive terminal of the first diode D1 is connected to the reference ground, and the positive terminal of the second diode D2 is connected to the operating voltage (e.g., 15V).

[0054] In practice, the first single-channel driver chip 111a also includes a fault indication terminal FAULT and a current detection terminal CS. When the corresponding functions are not used, the corresponding terminals can be left floating. When the fault indication function is used, the fault indication terminal FAULT of the first single-channel driver chip 111a is connected to the first fault indication signal FA1. When the current detection function is used, the first driver unit 110a also includes a third capacitor C3, a second resistor R2, a third resistor R3, and a third diode D3. The current detection terminal CS of the first single-channel driver chip 111a is connected to the negative terminal of the first diode D1 via the third capacitor C3. The second resistor R2 and the third resistor R3 are connected in series between the positive terminal of the third diode D3 and the negative terminal of the first diode D1, with their connection node connected to the current detection terminal CS. The negative terminal of the third diode D3 is connected to the drain terminal of the first power transistor parallel structure 131 in the power unit 130.

[0055] The first control unit 120a includes a first MOS transistor M1 and a second MOS transistor M2, which are connected in series and controlled by a first drive signal HO. The first control unit 120a is used to control the switching of the first MOS transistor M1 and the second MOS transistor M2 according to the first drive signal HO to drive the first power transistor parallel structure 131 in the power unit 130 to turn on or off.

[0056] The first MOS transistor M1 is an NMOS transistor, and the second MOS transistor M2 is a PMOS transistor. The first MOS transistor M1 and the second MOS transistor M2 are connected in series between the high-side floating power supply terminal VB and the high-side floating ground terminal VS of the first single-channel driver chip 111a (for example, the drain terminal of the first MOS transistor M1 is connected to the high-side floating power supply terminal VB of the first single-channel driver chip 111a, the source terminal is connected to the source terminal of the second MOS transistor M2, and the drain terminal of the second MOS transistor M2 is connected to the high-side floating ground terminal VS of the first single-channel driver chip 111a). The gate terminals are connected to each other and connected to the first drive signal HO.

[0057] As an example, the first control unit 120a further includes a fourth resistor R4, a fifth resistor R5, and a fourth diode D4; further, a sixth resistor R6. The first end of the fourth resistor R4 is connected to the connection node between the first MOS transistor M1 and the second MOS transistor M2, and the second end is connected to the control terminal of the first power transistor parallel structure 131. The negative end of the fourth diode D4 is connected to the connection node between the first MOS transistor M1 and the second MOS transistor M2, and the positive end is connected to the control terminal of the first power transistor parallel structure 131 via the fifth resistor R5. The first end of the sixth resistor R6 is connected to the connection node between the first MOS transistor M1 and the second MOS transistor M2, and the second end is connected to the positive end of the third diode D3.

[0058] When the first drive signal HO is at a high potential, the potential at point a is at a high potential. At this time, the first MOS transistor M1 is turned on, the second MOS transistor M2 is turned off, and the potential at point b is pulled up to nearly 15V. In this way, the gate-source junction capacitance of each first power transistor in the first power transistor parallel structure 131 is charged via the fourth resistor R4 to complete the turning on of the power transistor. When the first drive signal HO is at a low potential, the potential at point a is at a low potential. Since each first power transistor in the first power transistor parallel structure 131 is in the turned-on state, the potential at point b is at a high potential. At this time, the first MOS transistor M1 is turned off, the second MOS transistor M2 is turned on, and the gate-source junction capacitance of each first power transistor in the first power transistor parallel structure 131 is discharged via the fourth resistor R4, the fifth resistor R5, the fourth diode D4, and the second MOS transistor M2 to complete the turning off of the power transistor.

[0059] Among them, during the power tube opening process, assuming that the driving current I dri The internal resistance of the first MOS tube M1 is R dson is 10mΩ, then the loss P of the first MOS tube M1 is M1 =I dri 2 ×R dson =3 2 ×0.01=0.09W; Similarly, when the power tube is turned off, the loss of the second MOS tube M2 is P M2 The loss P of the first MOS tube M1 M1 The same is true, also 0.09W. Thus, during a single power tube switching process, the instantaneous loss of the first MOS tube M1 and the second MOS tube M2 in push-pull output is 0.18W, which is much smaller than the 8W instantaneous loss of conventional triode push-pull output. Thus, when MOS tubes are used to replace conventional triodes for push-pull output, because MOS tubes are voltage-type drive devices, the drive loss is reduced, the drive capability is enhanced, and the overall operating efficiency of the system is improved. Moreover, when driving the high-power first power tube parallel structure 131, the switching response speed is also faster.

[0060] The power unit 130 is implemented using a power module and includes a first power tube parallel structure 131. For example, the first power tube parallel structure 131 includes two parallel first power tubes Q11 and Q12. Both first power tubes Q11 and Q12 are NMOS tubes. Their gate terminals are connected to each other and serve as the control terminal of the first power tube parallel structure 131. Their drain terminals are connected to each other and serve as the drain terminal of the first power tube parallel structure 131, connected to the battery positive terminal BAT+. Their source terminals are connected to each other and serve as the source terminal of the first power tube parallel structure 131, connected to the reference ground. Of course, the number of parallel first power tubes in the first power tube parallel structure 131 can also be greater, such as three or four. This is determined by actual application requirements and is achieved through the selection of the power module. This embodiment does not impose any limitation on this.

[0061] Replacing the existing single-tube parallel solution with an integrated power module can improve the poor stability problem caused by the consistency differences between the single tubes in the single-tube parallel solution. At the same time, the use of an integrated power module is beneficial to shortening the line length from the battery positive terminal BAT+ to the drain terminal of the power tube because the power module itself is small in size and simple to drive, and does not require a driving resistor, so the parasitic inductance is greatly reduced. In this way, the current change rate di / dt can be increased accordingly, thereby reducing the switching time of the power tube, reducing switching losses, and improving the overall efficiency of the system. In addition, since the parasitic inductance is greatly reduced, the peak voltage will also be relatively reduced. Therefore, there is no need to set an RC snubber circuit at the drain and source ends of the power tube, which reduces circuit losses, improves efficiency and saves costs.

[0062] Furthermore, the drive control circuit 100 also includes a first voltage-stabilizing diode, the number of which is equal to the number of first power tubes in the first power tube parallel structure 131, and the first voltage-stabilizing diodes are arranged in a one-to-one correspondence with the first power tubes. The positive terminal of the first voltage-stabilizing diode is connected to the source terminal of the first power tube, and the negative terminal is connected to the control terminal of the first power tube. By connecting a bidirectional first voltage-stabilizing diode in parallel with the gate and source terminals of the first power tube, an increase in the reference ground voltage caused by excessive current, which could potentially break down the gate terminal of the power tube, can be avoided, effectively protecting the power tube and improving the safety and reliability of the system.

[0063] Taking the first power tube parallel structure 131 including two parallel first power tubes Q11 and Q12 as an example, in this case, the drive control circuit 100 includes two first voltage-stabilizing tubes Z11 and Z12, wherein the positive end of the first voltage-stabilizing tube Z11 is connected to the source end of the first power tube Q11, and the negative end is connected to the control end of the first power tube Q11; the positive end of the first voltage-stabilizing tube Z12 is connected to the source end of the first power tube Q12, and the negative end is connected to the control end of the first power tube Q12.

[0064] The microcontroller 140 is configured to provide a first input signal PWM_H. When the first single-channel driver chip 111 a uses a fault indication function, the microcontroller 140 is further configured to provide a first fault indication signal FA1 .

[0065] Example 2

[0066] As shown in FIG3 , compared to the first embodiment, the power module 130 of this embodiment further includes a second power tube parallel structure 132 , wherein the first power tube parallel structure 131 and the second power tube parallel structure 132 are connected in series between the battery positive terminal BAT+ and the reference ground; at this time, the drive control circuit 100 further includes a second drive unit 110 b and a second control unit 120 b.

[0067] The second driving unit 110b is configured to provide a second driving signal LO.

[0068] As an example, the second driving unit 110b is implemented using a single-channel driver chip (such as the IR2127S chip) to convert the second input signal PWM_L into a second driving signal LO output; in fact, when the second input signal PWM_L is at a high potential, the second driving signal LO is at a high potential, and when the second input signal PWM_L is at a low potential, the second driving signal LO is at a low potential.

[0069] It should be noted that in order to distinguish the single-channel driver chip in this embodiment from that in the first embodiment, the single-channel driver chip in this embodiment is referred to as the second single-channel driver chip 111b. All single-channel driver chips appearing below in this embodiment are represented by the second single-channel driver chip 111b.

[0070] In application, the second single-channel driver chip 111b is generally configured with peripheral matching components. In one possible implementation, the second driver unit 110b further includes a fourth capacitor C4, a fifth capacitor C5, a seventh resistor R7, a fifth diode D5, and a sixth diode D6. The low-side power supply terminal VCC of the second single-channel driver chip 111b is connected to an operating voltage (e.g., 15V) and to a reference ground via the fourth capacitor C4. The input terminal IN is connected to the second input signal PWM_L, the common ground terminal COM is connected to the reference ground, the high-side floating ground terminal VS is connected to the negative terminal of the fifth diode D5, the output terminal outputs the second drive signal LO via the seventh resistor R7, the high-side floating power supply terminal VB is connected to the negative terminal of the sixth diode D6 and to the negative terminal of the fifth diode D5 via the fifth capacitor C5. The positive terminal of the fifth diode D5 is connected to the reference ground, and the positive terminal of the sixth diode D6 is connected to the operating voltage (e.g., 15V).

[0071] In practice, the second single-channel driver chip 111b further includes a fault indication terminal FAULT and a current detection terminal CS. When the corresponding functions are not used, the corresponding ports can be left floating. When the fault indication function is used, the fault indication terminal FAULT of the second single-channel driver chip 111b is connected to the second fault indication signal FA2. When the current detection function is used, the second driver unit 110b further includes a sixth capacitor C6, an eighth resistor R8, a ninth resistor R9, and a seventh diode D7. The current detection terminal CS of the second single-channel driver chip 111b is connected to the negative terminal of the fifth diode D5 via the sixth capacitor C6. The eighth resistor R8 and the ninth resistor R9 are connected in series between the positive terminal of the seventh diode D7 and the negative terminal of the fifth diode D5, with their connection node connected to the current detection terminal CS. The negative terminal of the seventh diode D7 is connected to the drain terminal of the second power transistor parallel structure 132.

[0072] The second control unit 120b includes a third MOS transistor M3 and a fourth MOS transistor M4, which are connected in series and controlled by a second drive signal LO. The second control unit 120b is configured to perform switching control on the third MOS transistor M3 and the fourth MOS transistor M4 according to the second drive signal LO to drive the second power transistor parallel structure 132 to turn on or off.

[0073] The third MOS transistor M3 is an NMOS transistor, and the fourth MOS transistor M4 is a PMOS transistor. The third MOS transistor M3 and the fourth MOS transistor M4 are connected in series between the high-side floating power supply terminal VB and the high-side floating ground terminal VS of the second single-channel driver chip 111b (for example, the drain terminal of the third MOS transistor M3 is connected to the high-side floating power supply terminal VB of the second single-channel driver chip 111b, the source terminal is connected to the source terminal of the fourth MOS transistor M4, and the drain terminal of the fourth MOS transistor M4 is connected to the high-side floating ground terminal VS of the second single-channel driver chip 111b). The gate terminals of the third MOS transistor M3 and the fourth MOS transistor M4 are connected to each other and to the second drive signal LO.

[0074] As an example, the second control unit 120b further includes a tenth resistor R10, an eleventh resistor R11, and an eighth diode D8; further, a twelfth resistor R12. The tenth resistor R10 has a first end connected to the connection node between the third MOS transistor M3 and the fourth MOS transistor M4, and a second end connected to the control terminal of the second power transistor parallel structure 132. The eighth diode D8 has a negative end connected to the connection node between the third MOS transistor M3 and the fourth MOS transistor M4, and a positive end connected to the control terminal of the second power transistor parallel structure 132 via the eleventh resistor R11. The twelfth resistor R12 has a first end connected to the connection node between the third MOS transistor M3 and the fourth MOS transistor M4, and a second end connected to the positive terminal of the seventh diode D7.

[0075] In the power module, the number of first power tubes in the first power tube parallel structure 131 is the same as the number of second power tubes in the second power tube parallel structure 132, and each power tube is an NMOS tube. Taking the first power tube parallel structure 131 including two parallel first power tubes Q11 and Q12 and the second power tube parallel structure 132 including two parallel second power tubes Q21 and Q22 as an example, the gate terminals of the first power tubes Q11 and Q12 are connected to each other and serve as the control terminal of the first power tube parallel structure 131, the drain terminals of the first power tubes Q11 and Q12 are connected to each other and serve as the drain terminal of the first power tube parallel structure 131 to be connected to the battery positive terminal BAT+, the source terminal of the first power tube Q11 is connected to the drain terminal of the second power tube Q21, and the gate terminal of the first power tube Q12 is connected to the drain terminal of the first power tube Q11. The source end is connected to the drain end of the second power tube Q22. The gate ends of the second power tubes Q21 and Q22 are connected to each other and serve as the control end of the second power tube parallel structure 132. The source ends of the second power tubes Q21 and Q22 are connected to each other and serve as the source end of the second power tube parallel structure 132 to be connected to the reference ground. The source ends of the first power tubes Q11 and Q12 are connected to each other and serve as the source end of the first power tube parallel structure 131. The drain ends of the second power tubes Q21 and Q22 are connected to each other and serve as the drain end of the second power tube parallel structure 132. Of course, the number of corresponding power tubes connected in parallel in the corresponding power tube parallel structure may also be more, such as three, four, etc. This is determined by actual application requirements and is achieved by selecting the power module. This embodiment does not impose any limitation on this.

[0076] Furthermore, the drive control circuit 100 also includes a second voltage-stabilizing diode, the number of which is equal to the number of second power tubes in the second power tube parallel structure 132, and the second voltage-stabilizing diodes are arranged in a one-to-one correspondence with the second power tubes; wherein the positive terminal of the second voltage-stabilizing diode is connected to the source terminal of the second power tube, and the negative terminal is connected to the control terminal of the second power tube. By connecting a bidirectional second voltage-stabilizing diode in parallel with the gate terminal and the source terminal of the second power tube, it is possible to prevent the reference ground voltage from increasing due to excessive current, which could cause the gate terminal of the power tube to breakdown, effectively protecting the power tube and improving the safety and reliability of the system.

[0077] Taking the second power tube parallel structure 131 including two parallel second power tubes Q21 and Q22 as an example, in this case, the drive control circuit 100 includes two second voltage-stabilizing tubes Z21 and Z22, wherein the positive end of the second voltage-stabilizing tube Z21 is connected to the source end of the second power tube Q21, and the negative end is connected to the control end of the second power tube Q21; the positive end of the second voltage-stabilizing tube Z22 is connected to the source end of the second power tube Q22, and the negative end is connected to the control end of the second power tube Q22.

[0078] The microcontroller 140 is configured to provide a second input signal PWM_L. When the second single-channel driver chip 111 b uses a fault indication function, the microcontroller 140 is further configured to provide a second fault indication signal FA2 .

[0079] It should be noted that the driving control method of the second power tube parallel structure 132 is the same as the driving control method of the first power tube parallel structure 131 . For details, please refer to the first embodiment and will not be repeated here.

[0080] Example 3

[0081] This embodiment provides a power supply system, including the drive control circuit 100 described in the first or second embodiment. In practice, a power supply system typically uses a method of jointly controlling both the upper and lower transistors. In this case, the power supply system uses the drive control circuit 100 described in the second embodiment, wherein the first power transistor parallel structure 131 in the power module serves as the upper transistor, and the second power transistor parallel structure 132 serves as the lower transistor.

[0082] In summary, the drive control circuit and power supply system of the present invention use MOS tubes for push-pull output, which can reduce drive loss, enhance drive capability, improve the overall operating efficiency of the system, and help improve the switching response speed. The use of an integrated power module can improve the consistency difference of a single tube and improve circuit stability; at the same time, it greatly reduces parasitic inductance, reduces the switching time of the power tube, reduces switching loss, and improves the overall efficiency of the system; in addition, since the parasitic inductance is greatly reduced, the peak voltage will also be relatively reduced. Therefore, there is no need to set an RC absorption circuit at the drain and source ends of the power tube, which reduces circuit loss, improves efficiency, and saves costs. Therefore, the present invention effectively overcomes the various shortcomings of the prior art and has a high industrial utilization value.

[0083] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A drive control circuit, characterized in that: The drive control circuit comprises: A first driving unit, a first control unit and a power unit, wherein the power unit is implemented by a power module and includes a first power tube parallel structure; The first driving unit is used to provide a first driving signal; The first control unit includes a first MOS tube and a second MOS tube, which are connected in series and controlled by the first drive signal. The first MOS tube and the second MOS tube are switched according to the first drive signal to drive the first power tube parallel structure to turn on or off.

2. The drive control circuit according to claim 1, characterized in that: The first driving unit is implemented by a single-channel driver chip and is used to convert the first input signal into the first driving signal for output.

3. The drive control circuit according to claim 2, characterized in that: The first driving unit further includes a first capacitor, a second capacitor, a first resistor, a first diode and a second diode; The low-side power supply terminal of the single-channel driver chip is connected to the working voltage and connected to the reference ground via the first capacitor, the input terminal is connected to the first input signal, the common ground terminal is connected to the reference ground, the high-side floating ground terminal is connected to the negative end of the first diode, the output terminal outputs the first driving signal via the first resistor, and the high-side floating power supply terminal is connected to the negative end of the second diode and connected to the negative end of the first diode via the second capacitor; A positive end of the first diode is connected to a reference ground, and a positive end of the second diode is connected to the operating voltage.

4. The drive control circuit according to claim 3, characterized in that: The first driving unit further includes a third capacitor, a second resistor, a third resistor and a third diode; The current detection end of the single-channel driver chip is connected to the negative end of the first diode via the third capacitor, the second resistor and the third resistor are connected in series between the positive end of the third diode and the negative end of the first diode and their connection node is connected to the current detection end, and the negative end of the third diode is connected to the drain end of the first power tube parallel structure.

5. The drive control circuit according to any one of claims 2 to 4, characterized in that: The first control unit also includes a fourth resistor, a fifth resistor and a fourth diode; The first MOS transistor and the second MOS transistor are connected in series between the high-side floating power supply terminal and the high-side floating ground terminal of the single-channel driver chip, and the gate terminals are connected to each other and connected to the first driving signal; A first end of the fourth resistor is connected to a connection node between the first MOS transistor and the second MOS transistor, and a second end thereof is connected to a control end of the parallel structure of the first power transistor; The negative end of the fourth diode is connected to the connection node between the first MOS tube and the second MOS tube, and the positive end is connected to the control end of the first power tube parallel structure via the fifth resistor.

6. The drive control circuit according to claim 5, characterized in that: The first control unit also includes a sixth resistor, a first end of which is connected to a connection node between the first MOS transistor and the second MOS transistor, and a second end of which is connected to a positive end of a third diode.

7. The drive control circuit according to claim 1, characterized in that: The drive control circuit also includes a first voltage regulator tube, which is arranged in a one-to-one correspondence with the first power tube in the first power tube parallel structure; wherein the positive end of the first voltage regulator tube is connected to the source end of the first power tube, and the negative end is connected to the control end of the first power tube.

8. The drive control circuit according to claim 1, characterized in that: The first power tube parallel structure includes parallel first power tubes, the gate ends of the first power tubes are connected to each other and serve as the control end of the first power tube parallel structure, the drain ends are connected to each other and serve as the drain end of the first power tube parallel structure to connect to the positive end of the battery, and the source ends are connected to each other and serve as the source end of the first power tube parallel structure to connect to the reference ground.

9. The drive control circuit according to claim 8, characterized in that: The first power tube is an NMOS tube.

10. The drive control circuit according to claim 1, characterized in that: The power module further includes a second power tube parallel structure, wherein the first power tube parallel structure and the second power tube parallel structure are connected in series between the positive terminal of the battery and the reference ground; the drive control circuit further includes a second drive unit and a second control unit; The second driving unit is used to provide a second driving signal; The second control unit includes a third MOS tube and a fourth MOS tube, which are connected in series and controlled by the second drive signal. The third MOS tube and the fourth MOS tube are switched according to the second drive signal to drive the second power tube parallel structure to turn on or off.

11. The drive control circuit according to claim 10, characterized in that: The second driving unit has the same circuit structure as the first driving unit, and the second control unit has the same circuit structure as the first control unit.

12. The drive control circuit according to claim 10, characterized in that: The second power tube parallel structure includes parallel second power tubes, the gate ends of the second power tubes are connected to each other and serve as control ends of the second power tube parallel structure, the drain ends are connected to each other and serve as drain ends of the second power tube parallel structure, and the source ends are connected to each other and serve as source ends of the second power tube parallel structure to connect to the reference ground.

13. The drive control circuit according to claim 10, characterized in that: The source end of the first power tube in the first power tube parallel structure is connected to the drain end of the second power tube in the second power tube parallel structure.

14. The drive control circuit according to claim 10, characterized in that: The drive control circuit also includes a second voltage regulator tube, which is arranged one-to-one with the second power tube in the second power tube parallel structure; wherein the positive end of the second voltage regulator tube is connected to the source end of the second power tube, and the negative end is connected to the control end of the second power tube.

15. A power supply system, characterized in that: The power supply system comprises a drive control circuit as described in any one of claims 1-14.

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