Light emitting diode package having secondary enlarged bonding pad

Abstract

A light emitting diode package having a secondary enlarged bonding pad, comprising: an LED chip (1); a fluorescent film (2); a first reflective layer (3); a first bonding pad structure arranged below the LED chip, the first bonding pad structure comprising a first bonding pad (6) electrically connected to a first electrode (4) of the LED chip and a second bonding pad (7) electrically connected to a second electrode (5) of the LED chip, the first bonding pad and the second bonding pad being insulated from each other; and a second bonding pad structure arranged below the first bonding pad structure, the second bonding pad structure comprising a third bonding pad (8) electrically connected to the first bonding pad and a fourth bonding pad (9) electrically connected to the second bonding pad, the third bonding pad and the fourth bonding pad being insulated from each other, and the gap between the third bonding pad and the fourth bonding pad being greater than the gap between the first bonding pad and the second bonding pad.

Description

A light-emitting diode package with secondary enlarged pad Technical Field

[0001] The present invention relates to the field of semiconductor technology, in particular to a light emitting diode package with a secondary enlarged pad. Background Art

[0002] LED packaged components are typically mounted using efficient surface-mount mounting (SMT), which places certain requirements on the LED device's solder pad size (min. > 150 x 150 μm). CSP (chip-scale packaging) is a bracketless technology, where the size of the solder pad is directly determined by the chip itself. Smaller chip sizes (< 20 x 20 mils) prevent direct SMT placement of the CSP package (resulting in low yield rates), necessitating the use of a bracket. Summary of the Invention

[0003] The purpose of the present invention is to provide a light-emitting diode package with a secondary enlarged pad, which can be directly used in SMT without introducing a bracket, thereby improving the patch yield, reducing costs, and realizing true CSP under small chips.

[0004] To achieve the above-mentioned purpose, the technical solution adopted by the present invention is: a light-emitting diode package with a secondary expanded pad, comprising:

[0005] The LED chip has a top surface, a bottom surface opposite to the top surface, and a side surface connecting the top surface and the bottom surface;

[0006] A fluorescent film covering the top surface of the LED chip;

[0007] A first reflective layer is provided at least around the sides of the LED chip and exposes the lower end surface of the LED chip electrode;

[0008] a first pad structure, disposed below the LED chip, the first pad structure comprising a first pad electrically connected to a first electrode of the LED chip and a second pad electrically connected to a second electrode of the LED chip, the first pad and the second pad being insulated from each other;

[0009] The second pad structure is arranged below the first pad structure. The second pad structure includes a third pad electrically connected to the first pad and a fourth pad electrically connected to the second pad. The third pad and the fourth pad are insulated from each other and the distance between them is greater than the distance between the first pad and the second pad.

[0010] and a second reflective layer covering the side walls of the first pad structure and the second pad structure.

[0011] A further improvement of the present invention is:

[0012] The width of the fluorescent film is not less than the width of the LED chip. The first reflective layer covers the sides and part of the bottom of the LED chip and the sides of the fluorescent film. The top surface of the first reflective layer is flush with the top surface of the fluorescent film.

[0013] A further improvement of the present invention is that the width of the fluorescent film is greater than the width of the LED chip, the first reflective layer covers the sides and part of the bottom of the LED chip, the top surface of the first reflective layer is flush with the top surface of the LED chip, and the fluorescent film covers the top surface of the first reflective layer and the top surface of the LED chip.

[0014] A further improvement of the present invention is that the top surfaces of the fluorescent film and the first reflective layer are covered with a light-transmitting layer.

[0015] A further improvement of the present invention is that a bowl-cup structure is provided between the first reflective layer and the LED chip, and the bowl-cup structure covers the four side walls of the LED chip.

[0016] A further improvement of the present invention is that the distance between the first pad and the second pad is consistent with the distance between the first electrode and the second electrode;

[0017] And / or, two opposing surfaces of the first pad and the second pad are flush with two opposing surfaces of the first electrode and the second electrode respectively.

[0018] A further improvement of the present invention is that the distance between the first pad and the second pad is 80-150 μm;

[0019] And / or, the distance between the third pad and the fourth pad is 150-200 um.

[0020] A further improvement of the present invention is that the distance between the two opposite surfaces of the first pad and the second pad is greater than the distance between the two opposite surfaces of the third pad and the fourth pad.

[0021] A further improvement of the present invention is that the distance between the edges of the first and second pads and the outer side of the first reflective layer is 1-200 μm;

[0022] And / or, the distance between the two opposite surfaces of the first pad and the second pad is greater than the distance between the two opposite surfaces of the third pad and the fourth pad by 30-100 μm.

[0023] A further improvement of the present invention is that the first electrode and the second electrode of the LED chip are composed of multiple layers of metal, which are Ti layer, Cu layer, Ni layer, and Au layer in sequence from the end close to the LED chip to the end close to the first pad structure, or Cr layer, Cu layer, Ni layer, and Au layer in sequence.

[0024] A further improvement of the present invention is that the thickness of the first electrode and the second electrode is 1~100um; the thickness of the Ti layer or Cr layer is 100~5000Å; the thickness of the Cu layer is 1~100um; the thickness of the Ni layer is 1~10um, and the thickness of the Au layer is 200~5000Å.

[0025] A further improvement of the present invention is that the first pad and the second pad include an upper metal layer close to the LED chip and a lower metal layer away from the LED chip, the upper metal layer is a Ti layer or a Cr layer, and the lower metal layer is a Cu layer.

[0026] A further improvement of the present invention is that the thickness of the first pad and the second pad is 1-50 um; the thickness of the Ti layer or the Cr layer is 100Å-5000Å, and the thickness of the Cu layer is 1-50 um.

[0027] A further improvement of the present invention is that the third pad and the fourth pad include an upper metal layer close to the LED chip and a lower metal layer away from the LED chip, the upper metal layer is a Ni layer, and the lower metal layer is a Sn layer;

[0028] A further improvement of the present invention is that the thickness of the third pad and the fourth pad is 1-100 um; the thickness of the Ni layer is 1-10 um, and the thickness of the Sn layer is 1-100 um.

[0029] A further improvement of the invention is that the third pad and the fourth pad are composed of multiple layers of metal, which are Ti layer, Ni layer, Sn layer in sequence from the end close to the LED chip to the end farthest from the LED chip, or Ni layer, Au layer, Sn layer in sequence, or Cu layer, Ni layer, Au layer in sequence.

[0030] A further improvement of the present invention is that the Sn layer has a thickness of 1-100 μm, the Ni layer has a thickness of 1-10 μm, the Ti layer has a thickness of 100-5000 Å, the Au layer has a thickness of 200-5000 Å, and the Cu layer has a thickness of 1-100 μm.

[0031] The beneficial effects of the present invention are:

[0032] First, existing chip electrodes are too small to be directly used for SMT placement, typically requiring the use of a bracket for packaging. This invention, by growing a larger pad structure beneath the small chip electrodes, expands the contact area between the chip and the conductive substrate, increasing placement tolerance. This allows direct use of CSP without the need for a bracket, improving placement yield.

[0033] Second, the present invention uses two photolithography techniques to add a second pad structure, and uses the second pad structure to widen the electrode gap width to 150-200 μm, thereby achieving a safe mounting spacing and preventing short circuits.

[0034] Third, the metal layer of the second pad structure of the present invention is NiSn, which effectively reduces the cost compared to using CuNiAu.

[0035] Fourth, the present invention can increase the area of ​​the original pad of the chip (by reducing the gap), thereby increasing the contact area between the first and second pads and the LED chip electrode, increasing the thermal conductivity and adhesion, and at the same time, increasing the gap through the third and fourth pads to improve the patch yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] FIG1 is a schematic structural diagram of embodiment 1 of the present invention.

[0037] FIG2 is a schematic structural diagram of embodiment 2 of the present invention.

[0038] FIG3 is a schematic structural diagram of embodiment 3 of the present invention.

[0039] FIG4 is a schematic structural diagram of embodiment 4 of the present invention.

[0040] FIG5 is a schematic structural diagram of embodiment 5 of the present invention.

[0041] FIG6 is a schematic structural diagram of embodiment 6 of the present invention.

[0042] In the figure, 1-LED chip, 2-fluorescent film, 3-first reflective layer, 4-first electrode, 5-second electrode, 6-first soldering pad, 7-second soldering pad, 8-third soldering pad, 9-fourth soldering pad, 10-second reflective layer, 11-light-transmitting layer, 12-bowl-cup structure. DETAILED DESCRIPTION

[0043] The present invention will be further explained below with reference to the accompanying drawings and specific embodiments. Example 1

[0044] As shown in FIG1 , a light-emitting diode package with a secondary enlarged pad includes:

[0045] The LED chip 1 has a top surface, a bottom surface opposite to the top surface, and a side surface connecting the top surface and the bottom surface;

[0046] A fluorescent film 2 covering the top surface of the LED chip 1;

[0047] The first reflective layer 3 is at least arranged around the sides of the LED chip 1 and exposes the lower end surface of the electrode of the LED chip 1;

[0048] A first pad structure is provided below the LED chip 1. The first pad structure includes a first pad 6 electrically connected to the first electrode 4 of the LED chip 1 and a second pad 7 electrically connected to the second electrode 5 of the LED chip. The first pad 6 and the second pad 7 are insulated from each other.

[0049] The second pad structure is arranged below the first pad structure. The second pad structure includes a third pad 8 electrically connected to the first pad 6 and a fourth pad 9 electrically connected to the second pad 7. The third pad 8 and the fourth pad 9 are insulated from each other and the distance between them is greater than the distance between the first pad 6 and the second pad 7.

[0050] and a second reflective layer 10 covering the sidewalls of the first pad structure and the second pad structure.

[0051] The width of the fluorescent film 2 is not less than the width of the LED chip 1 . The first reflective layer 3 covers the sides and part of the bottom of the LED chip 1 and the sides of the fluorescent film 2 . The top surface of the first reflective layer 3 is flush with the top surface of the fluorescent film 2 .

[0052] The distance between the first pad 6 and the second pad 7 is consistent with the distance between the first electrode 4 and the second electrode 5;

[0053] The two opposing surfaces of the first pad 6 and the second pad 7 are flush with the two opposing surfaces of the first electrode 4 and the second electrode 5 , respectively.

[0054] The distance between the first pad 6 and the second pad 7 is 80-150 μm;

[0055] The distance between the third pad 8 and the fourth pad 9 is 150-200 μm.

[0056] The distance between the first pad 6 and the second pad 7 facing away from each other is greater than the distance between the third pad 8 and the fourth pad 9 facing away from each other.

[0057] The distance between the edge of the first pad 6 and the second pad 7 and the outer side of the first reflective layer 3 is 1-200 μm, preferably 50-100 μm;

[0058] The distance between the first and second pads 6 and 7 on opposite sides is 30-100 μm, preferably 40-60 μm, greater than the distance between the third and fourth pads 8 and 9 on opposite sides. This distance can be increased to provide sufficient spacing during SMT soldering to prevent short circuits.

[0059] The LED chip 1 includes, from top to bottom, a substrate, a first-type semiconductor layer, a light-emitting layer, and a second semiconductor layer. The electrodes include a first electrode 4 disposed on the lower surface of the second semiconductor layer and electrically connected to the first semiconductor layer, and a second electrode 5 electrically connected to the second semiconductor layer. The first electrode 4 and the second electrode 5 are opposite electrodes. That is, if the first electrode 4 is a P-type electrode, the second electrode 5 is an N-type electrode; if the first electrode 4 is an N-type electrode, the second electrode 5 is a P-type electrode.

[0060] The first electrode 4 and the second electrode 5 of the LED chip 1 are composed of multiple layers of metal, which are Ti layer, Cu layer, Ni layer, Au layer in sequence from the end close to the LED chip 1 to the end close to the first pad structure, or Cr layer, Cu layer, Ni layer, Au layer in sequence.

[0061] The thickness of the first electrode 4 and the second electrode 5 is 1-100 μm, preferably 30-60 μm; the thickness of the Ti layer or Cr layer is 100-5000 Å; the thickness of the Cu layer is 1-100 μm, preferably 30-60 μm; the thickness of the Ni layer is 1-10 μm, preferably 2-4 μm; and the thickness of the Au layer is 200-5000 Å, preferably 650-950 Å.

[0062] The first and second solder pads 6 and 7 comprise an upper metal layer proximal to the LED chip 1 and a lower metal layer distal to the LED chip 1. The upper metal layer is a Ti or Cr layer, and the lower metal layer is a Cu layer. In this embodiment, the first and second solder pads 6 and 7 are arranged to completely overlap the first and second electrodes 4 and 5, and extend toward but not to the edge of the first reflective layer 3. The larger solder pad structure is designed for heat dissipation and facilitates connection to external electrodes.

[0063] The thickness of the first pad 6 and the second pad 7 is 1-50 um, preferably 20-30 um; the thickness of the Ti layer or the Cr layer is 100Å-5000Å; the thickness of the Cu layer is 1-50 um, preferably 20-30 um.

[0064] Optionally, the third pad 8 and the fourth pad 9 include an upper metal layer close to the LED chip 1 and a lower metal layer away from the LED chip 1, the upper metal layer is a Ni layer, and the lower metal layer is a Sn layer;

[0065] The thickness of the third pad 8 and the fourth pad 9 is 1-100 um, preferably 30-60 um; the thickness of the Ni layer is 1-10 um, preferably 2-4 um; the thickness of the Sn layer is 1-100 um, preferably 30-60 um.

[0066] Optionally, the third pad 8 and the fourth pad 9 may also be composed of multiple layers of metal, which may be a Ti layer, a Ni layer, and a Sn layer in order from the end close to the LED chip 1 to the end farthest from the LED chip 1, wherein the Sn layer has a thickness of 1 to 100 μm, preferably 30 to 60 μm; the Ni layer has a thickness of 1 to 10 μm, preferably 2 to 4 μm; and the Ti layer has a thickness of 100 to 5000 Å, preferably 100 to 5000 Å.

[0067] Or it is a Ni layer, an Au layer, and a Sn layer in sequence, wherein the Sn layer has a thickness of 1 to 100 μm, preferably 30 to 60 μm; the Au layer has a thickness of 200 to 5000 Å, preferably 650 to 950 Å; and the Ni layer has a thickness of 1 to 10 μm, preferably 2 to 4 μm;

[0068] Alternatively, the layers may be a Cu layer, a Ni layer, and an Au layer, wherein the Cu layer has a thickness of 1-100 μm, preferably 30-60 μm, the Ni layer has a thickness of 1-10 μm, preferably 2-4 μm, and the Au layer has a thickness of 200-5000 Å, preferably 650-950 Å.

[0069] Optionally, a first through-slot is defined in the third pad 8, and a second through-slot is defined in the fourth pad 9. This can effectively relieve stress and reduce the risk of metal layer shedding. The first and second through-slots can be square, circular, arcuate, triangular, polygonal, or a combination of one or more of the foregoing shapes. Multiple first and second through-slots can be provided, distributed in the third pad 8 and fourth pad 9, respectively, occupying 0% to 15% of the area of ​​the third pad 8 and fourth pad 9, respectively; preferably, 2% to 10%. Differently shaped through-slots can be used to distinguish the positive and negative poles of the LED chip 1.

[0070] The fluorescent film 2 can be formed by first mixing a dopant with a colloid to form a precursor, and then by a film-forming process. The dopant is a phosphor, including one or more of KSF powder, nitride phosphor, silicate phosphor, chlorate phosphor, YAG phosphor, and sulfide-containing phosphor. The light emitted by the LED chip 1 can be blue, green, or red. The light emitted by the LED chip 1 is converted in wavelength after passing through the fluorescent film 2, emitting light of another color. In this embodiment, since the required LED package is white light, but the light emitted by the LED chip 2 is blue light, the required fluorescent film needs to convert the blue light into white light.

[0071] The first reflective layer 3 is an insulating reflective layer that not only reflects lateral light emitted by the LED chip but also protects the chip. In this embodiment, the reflectivity of the first reflective layer 3 is greater than 90%. It is made of transparent silicone doped with reflective particles, i.e., highly reflective white silicone. The reflective particles can be insulating particles such as TiO2, SiO2, SiN, etc., or metal particles such as Al, Ag, Cu, etc. The second reflective layer 10 is made of transparent silicone doped with reflective particles, i.e., highly reflective white silicone doped with reflective particles, i.e., insulating particles. Example 2

[0072] As can be seen from FIG2 , the structures of the fluorescent film 2 and the first reflective layer 3 are changed in this embodiment compared to the embodiment 1. The difference is:

[0073] The width of the fluorescent film 2 is greater than the width of the LED chip 1. The first reflective layer 3 covers the sides and part of the bottom of the LED chip 1. The top surface of the first reflective layer 3 is flush with the top surface of the LED chip 1. The fluorescent film 2 covers the top surface of the first reflective layer 3 and the top surface of the LED chip 1.

[0074] Apart from this, this embodiment is exactly the same as embodiment 2 and will not be described in detail here.

[0075] Compared with Example 1, this embodiment enables the LED chip 1 to emit light more from the side, thereby increasing the light emission angle of the chip and improving the light emission effect. Example 3

[0076] As can be seen from FIG3 , the structure of this embodiment is substantially the same as that of embodiment 1, except that:

[0077] The top surfaces of the fluorescent film 2 and the first reflective layer 3 are covered with a light-transmitting layer 11. The light-transmitting layer 11 can be pure transparent silica gel, or fluorescent glue doped with fluorescent powder.

[0078] Apart from this, this embodiment is exactly the same as embodiment 2 and will not be described in detail here.

[0079] Compared to the exposed fluorescent film 2 in Example 1, this embodiment completely encapsulates the fluorescent film 2 within the package by providing a light-transmitting layer 11. This provides excellent light transmission, effectively isolates moisture, and achieves high reliability. Furthermore, it enables the use of moisture-sensitive KSF phosphor films to achieve a high color gamut. A high color gamut is achieved by exciting the KSF phosphor film. Example 4

[0080] As can be seen from FIG4 , the structure of this embodiment is substantially the same as that of embodiment 1, except that:

[0081] A bowl-cup structure 12 is provided between the first reflective layer 3 and the LED chip 1, and the bowl-cup structure 12 covers the sidewalls of the LED chip 1. The bowl-cup structure is a transparent reflective cavity, preferably made of transparent silicone.

[0082] Apart from this, this embodiment is identical to Embodiment 1 and will not be described in detail here.

[0083] Compared with Example 1, this embodiment improves the reflection efficiency of the side light of the LED chip by setting a bowl-cup structure, effectively utilizes the light emitted from the side of the LED chip, improves the light output rate of the LED chip, and further improves the light output angle. Example 5

[0084] As can be seen from FIG5 , the structure of this embodiment is substantially the same as that of embodiment 2, except that:

[0085] A bowl-cup structure 12 is provided between the first reflective layer 3 and the LED chip 1, and the bowl-cup structure 12 covers the sidewalls of the LED chip 1. The bowl-cup structure is a transparent reflective cavity, preferably made of transparent silicone.

[0086] Apart from this, this embodiment is exactly the same as embodiment 2 and will not be described in detail here.

[0087] Compared with Example 2, this embodiment improves the reflection efficiency of the side light of the LED chip by setting a bowl-cup structure, effectively utilizes the light emitted from the side of the LED chip, improves the light output rate of the LED chip, and further improves the light output angle. Example 6

[0088] As can be seen from FIG6 , the structure of this embodiment is substantially the same as that of embodiment 3, except that:

[0089] A bowl-cup structure 12 is provided between the first reflective layer 3 and the LED chip 1, and the bowl-cup structure 12 covers the sidewalls of the LED chip 1. The bowl-cup structure is a transparent reflective cavity, preferably made of transparent silicone.

[0090] Apart from this, this embodiment is exactly the same as embodiment 3 and will not be described in detail here.

[0091] Compared with Example 3, this embodiment improves the reflection efficiency of the side light of the LED chip by setting a bowl-cup structure, effectively utilizes the light emitted from the side of the LED chip, improves the light output rate of the LED chip, and further improves the light output angle.

[0092] In the description of the present invention, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "top", "bottom", "inside", "outside" and the like indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on the present invention. Any equivalent structure or equivalent process transformation made using the contents of the present invention specification and drawings, or directly or indirectly applied in other related technical fields, are similarly included in the patent protection scope of the present invention.

Claims

1. A light emitting diode package with a secondary enlarged pad, characterized in that: include: An LED chip (1) has a top surface, a bottom surface arranged opposite to the top surface, and a side surface connecting the top surface and the bottom surface; A fluorescent film (2) covering the top surface of the LED chip (1); A first reflective layer (3) is arranged at least around the side surfaces of the LED chip (1) and exposes the lower end surface of the electrode of the LED chip (1); A first solder pad structure, arranged below the LED chip (1), the first solder pad structure comprising a first solder pad (6) electrically connected to the first electrode (4) of the LED chip (1) and a second solder pad (7) connected to the second electrode (5) of the LED chip, the first solder pad (6) and the second solder pad (7) being insulated from each other; A second pad structure is arranged below the first pad structure, the second pad structure comprising a third pad (8) electrically connected to the first pad (6) and a fourth pad (9) electrically connected to the second pad (7), the third pad (8) and the fourth pad (9) being insulated from each other and a distance between the third pad (8) and the fourth pad (9) being greater than a distance between the first pad (6) and the second pad (7).

2. A second reflective layer (10) covering the side walls of the first pad structure and the second pad structure.

3. The light emitting diode package with secondary enlarged pad according to claim 1, characterized in that: The width of the fluorescent film (2) is not less than the width of the LED chip (1); the first reflective layer (3) covers the sides and part of the bottom of the LED chip (1) and the sides of the fluorescent film (2); and the top surface of the first reflective layer (3) is flush with the top surface of the fluorescent film (2).

4. The light emitting diode package with secondary enlarged pad according to claim 1, characterized in that: The width of the fluorescent film (2) is greater than the width of the LED chip (1); the first reflective layer (3) covers the sides and part of the bottom of the LED chip (1); the top surface of the first reflective layer (3) is flush with the top surface of the LED chip (1); and the fluorescent film (2) covers the top surface of the first reflective layer (3) and the top surface of the LED chip (1).

5. The light emitting diode package with secondary enlarged pad according to claim 2, characterized in that: The top surfaces of the fluorescent film (2) and the first reflective layer (3) are covered with a light-transmitting layer (11).

6. A light emitting diode package with secondary enlarged pad according to any one of claims 1 to 4, characterized in that: A bowl-cup structure (12) is provided between the first reflective layer (3) and the LED chip (1), and the bowl-cup structure (12) covers the side walls around the LED chip (1).

7. A light emitting diode package with secondary enlarged pad according to any one of claims 1 to 5, characterized in that: The distance between the first solder pad (6) and the second solder pad (7) is consistent with the distance between the first electrode (4) and the second electrode (5); And / or, two opposing surfaces of the first pad (6) and the second pad (7) are respectively flush with two opposing surfaces of the first electrode (4) and the second electrode (5).

8. A light emitting diode package with secondary enlarged pad according to any one of claims 1 to 5, characterized in that: The distance between the first pad (6) and the second pad (7) is 80-150 um; And / or, the distance between the third pad (8) and the fourth pad (9) is 150-200 um.

9. A light emitting diode package with secondary enlarged pad according to any one of claims 1 to 5, characterized in that: The distance between the two opposite sides of the first soldering pad (6) and the second soldering pad (7) is greater than the distance between the two opposite sides of the third soldering pad (8) and the fourth soldering pad (9).

10. The light emitting diode package with secondary enlarged pad according to claim 8, characterized in that: The distance between the edge of the first soldering pad (6) and the second soldering pad (7) and the outer side of the first reflective layer (3) is 1-200 um; And / or, the distance between the two opposite sides of the first pad (6) and the second pad (7) is greater than the distance between the two opposite sides of the third pad (8) and the fourth pad (9) by 30 to 100 um.

11. A light emitting diode package with secondary enlarged pad according to any one of claims 1 to 5, characterized in that: The first electrode (4) and the second electrode (5) of the LED chip (1) are composed of multiple layers of metal, which are Ti layer, Cu layer, Ni layer, Au layer in sequence from the end close to the LED chip (1) to the end close to the first pad structure, or Cr layer, Cu layer, Ni layer, Au layer in sequence.

12. The light emitting diode package with secondary enlarged pad according to claim 10, characterized in that: The thickness of the first electrode (4) and the second electrode (5) is 1-100 um; The thickness of the Ti layer or Cr layer is 100~5000Å; the thickness of the Cu layer is 1~100um; the thickness of the Ni layer is 1~10um, and the thickness of the Au layer is 200~5000Å.

13. A light emitting diode package with secondary enlarged pad according to any one of claims 1 to 5, characterized in that: The first solder pad (6) and the second solder pad (7) comprise an upper metal layer close to the LED chip (1) and a lower metal layer far from the LED chip (1); the upper metal layer is a Ti or Cr layer, and the lower metal layer is a Cu layer.

14. The light emitting diode package with secondary enlarged pad according to claim 12, characterized in that: The thickness of the first pad (6) and the second pad (7) is 1 to 50 um; the thickness of the Ti layer or the Cr layer is 100Å to 5000Å, and the thickness of the Cu layer is 1 to 50 um.

15. A light emitting diode package with secondary enlarged pad according to any one of claims 1 to 5, characterized in that: The third solder pad (8) and the fourth solder pad (9) comprise an upper metal layer close to the LED chip (1) and a lower metal layer far from the LED chip (1), the upper metal layer is a Ni layer, and the lower metal layer is a Sn layer; The light-emitting diode package with secondary enlarged pads according to claim 14, characterized in that: the thickness of the third pad (8) and the fourth pad (9) is 1-100 um; The thickness of the Ni layer is 1~10um, and the thickness of the Sn layer is 1~100um.

16. A light emitting diode package with secondary enlarged pad according to any one of claims 1 to 5, characterized in that: The third solder pad (8) and the fourth solder pad (9) are composed of multiple layers of metal, which are Ti layer, Ni layer, Sn layer, or Ni layer, Au layer, Sn layer, or Cu layer, Ni layer, Au layer, from the end close to the LED chip (1) to the end far from the LED chip (1).

17. A light emitting diode package with secondary enlarged pad according to any one of claim 16, characterized in that: The thickness of the Sn layer is 1~100um, the thickness of the Ni layer is 1~10um, the thickness of the Ti layer is 100~5000Å, the thickness of the Au layer is 200~5000Å, and the thickness of the Cu layer is 1~100um.

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