Device and method for producing a composite body

Abstract

The invention relates to a device (1) and a method for producing a composite body, having at least one functional layer, or for further use in the production of an electronic or optoelectronic component or a solid-state battery. The device (1) comprises a process chamber (3), a first material source (4) which is oriented towards a substrate (2) that can be received within the process chamber (3), and an energy beam source (5), wherein a first material stream (6) can be generated by means of the first material source (4), and an energy beam (7) can be generated by means of the energy beam source (5). Furthermore, the energy beam source (5) is aligned relative to the first material source (4) such that the first material stream (6) can be superimposed with the energy beam (7) in the vicinity (8) of the substrate (2) or in the region (9) where the first material stream (6) strikes the substrate (2), wherein a superimposition region (10) is defined.

Description

[0001] Device and method for producing a composite body

[0002] The invention relates to a device and a method for producing a composite body having at least one functional layer or for further use in producing an electronic or optoelectronic component or a solid-state battery. The composite body is designed as a layered structure and comprises at least one substrate formed as a plate with at least one planar substrate surface and at least one substantially polycrystalline or at least one substantially monocrystalline layer comprising at least one compound semiconductor, a 2D layer, a ceramic material, an amorphous layer, a solid-state battery layer, a metallic layer, in particular a thin metal film, or a metallic hard material.

[0003] A generic method is known from the applicant's document DE 10 2013 112 785 B3. In this known method, a substrate is first heated and cleaned, then the substrate surface is terminated, and at least one layer is grown thereon by supplying material components using a material source. A disadvantage of this method is that the quality and growth rate of the layer to be grown on the substrate are limited, among other things, by the type of material source.

[0004] The object of the present invention was to overcome the disadvantages of the prior art and to provide a device and a method by means of which an effective deposition of material components as a layer to be grown on a substrate is possible, wherein the quality and growth rate of the layer to be grown are improved.

[0005] This object is achieved by a device and a method according to the claims. The device according to the invention for producing electronic or optoelectronic components or solid-state batteries as composite bodies by preferably plasma-assisted chemical vapor deposition or reactive physical vapor deposition, or a combination thereof, onto a substrate comprises a process chamber, a first material source directed onto a substrate that can be accommodated within the process chamber, and an energy beam source. A first material stream can be generated by means of the first material source and an energy beam can be generated by means of the energy beam source.The device is characterized in that the energy beam source is aligned relative to the first material source such that the first material stream can be superimposed by the energy beam in the vicinity of the substrate or in the area where the first material stream impinges on the substrate, wherein an overlay region is defined.

[0006] The device according to the invention can, in particular, be part of an inline coating system for plasma-assisted chemical vapor deposition or reactive physical vapor deposition, or a combination thereof, on substrates, wherein several process chambers can be arranged in series. Such systems are known from the prior art, for example, from EP 2 521 804 B1, so that more precise design options or

[0007] Definitions of system components such as the process chamber will not be discussed further here.

[0008] In the context of the invention, a composite body is to be understood as a layer structure which comprises at least one substrate designed as a plate with at least one flat substrate surface and at least one substantially polycrystalline or at least one substantially monocrystalline layer which comprises at least one compound semiconductor, a 2D layer, a ceramic material, an amorphous layer, a solid-state battery layer, a metallic layer, in particular a thin metal film, or a metallic hard material.

[0009] A substrate can be made of a wide variety of carrier materials, such as silicon or other semiconductor blank materials or crystals, metal, textiles, polymers, glass, paper or other temperature-sensitive materials.

[0010] The first material source can be designed such that the first material flow is formed from material components, so that by means of the material source the at least one substantially polycrystalline or the at least one substantially monocrystalline layer, which comprises at least one compound semiconductor, a 2D layer, a ceramic material, an amorphous layer, a solid-state battery layer, a metallic layer, in particular a metal thin film, or a metallic hard material, can be built up on the substrate.

[0011] In this context, the material components of a compound semiconductor are understood to mean materials or material compounds or compounds with semiconductor properties, which specifically include the following: - compounds of elements of main group II with elements of main group VI of the Periodic Table of Elements (PSE), such as ZnO, ZnSe or similar;

[0012] - Compounds of elements of main group III with elements of main group V of the PSE, such as GaN, GaAs, GaSb, InP, BAIGalnN or similar;

[0013] - Compounds of elements of the III main group with elements of the VI main group of the PSE, such as Ga2O3, AI2O3 or similar;

[0014] - Compounds of different elements of the IV main group of the PSE, SiC, and pure elements such as Si, Ge or diamond.

[0015] In this context, a 2D layer is a crystalline material that consists of only one layer of atoms or molecules.

[0016] For example, these may include graphene, two-dimensional boron nitride or molybdenum sulfide.

[0017] In this context, a solid-state battery layer refers to material layers that serve entirely or partially to construct solid-state batteries. For example, lithium or a polymer ceramic coating with aluminum nitride (AIN) can be used as an anode material.

[0018] In this context, a ceramic material is understood to be a non-oxide ceramic material. For example, silicon nitride (SiSn4) or boron carbide (B4C) are among the material components of ceramic materials.

[0019] In this context, an amorphous layer is understood to be a particularly non-crystalline structure. For example, this includes diamond-like carbon (DLC) layers.

[0020] In this context, a metal thin film is understood to mean a metal layer that can consist, for example, of a single metal, metal compounds, or metal layer sequences. This layer or layer sequence can be ohmic in nature or be formed as a Schottky rectifier diode layer or Schottky barrier diode layer. For example, in a gallium nitride-based (GaN-based) transistor structure, the metal layer sequence titanium, aluminum, nickel, and gold is used for the ohmic contact.

[0021] In this context, a metallic hard material is understood to mean, in particular, a coating with a Vickers hardness of more than 1000 VH and / or a Mohs hardness of more than 9.0, which has a predominant proportion of metallic bonds. For example, titanium nitride (TiN) is included in the material components of a metallic hard material.

[0022] An energy beam source can be understood, for example, as a laser, a discharge lamp, a flash tube, a flash lamp, in particular an excimer, an excimer laser, an excimer flash lamp, or an excited dimer, an ion gun, or a magnetron. Furthermore, an energy beam source can be understood as a laser that generates heat, such as a CO2 laser, a diode laser, or an Nd:YAG laser. An energy beam source can also be understood as a flash lamp, by means of which the energy input is achieved according to the device according to the invention.

[0023] The first material beam can have a cross-sectional area defined parallel to the substrate surface, wherein the overlap region can be formed as a sub-area of ​​the cross-sectional area and, in particular, equal to the cross-sectional area. This can be achieved, for example, by appropriately rasterizing or scanning the energy beam or by appropriately fanning it out, such as by means of a prism or by providing an array of point sources or individual energy beam sources, or by lenses, photomasks, and beam splitters. The energy can be distributed over a large area or focused on defined regions, and can be constant or pulsed over time.

[0024] By means of the device according to the invention, it is thus achieved that the energy of the energy beam is at least partially absorbed or introduced into components or material components of the first material stream, preferably in the vicinity of the substrate, in particular immediately before the first material stream impacts the substrate, so that the reactivity of the material components is increased. Alternatively, the device according to the invention can also achieve that the energy of the energy beam is preferably absorbed on a substrate surface of the substrate in the impact region of the first material stream, wherein the first material stream and the energy beam overlap directly on the substrate surface in the impact region, so that the reactivity of the material components is increased.

[0025] In any case, the energy beam causes an energy input into the material flow in the overlapping region, increasing the reactivity of the material components—that is, the particles, molecules, or atoms of the first material flow—so that their distribution and bonding ability on or with the substrate or a coating on the substrate is improved. Furthermore, improved reactivity can lead to improved nucleation density and nucleation rate during coating of the substrate, as the lateral mobility of the molecules relative to the flow direction of the material flow and the diffusion tendency of the material components are improved. This advantage can also be used in the doping of semiconductors by improving the way the foreign material can be incorporated or electrically activated.

[0026] The energy beam can act on the material components of the material flow in the overlap region at an angle to the material flow. This angle can be 90° relative to the flow direction of the material flow or assume any desired value, up to a parallel alignment of the energy beam relative to the material flow, provided that an overlap region is still formed between the material flow and the energy beam. Since the reactivity of the material components of the material flow is increased by the action of the energy beam on the material components, the device according to the invention can be used to coat temperature-sensitive substrates, such as substrates made of textiles, polymers, glass, paper, or other organic compounds, but equally also substrates made of conventional inorganic compounds such as metals, semiconductors, or ceramics.In any case, the production of electronic or optoelectronic components or of solid-state battery layers as composite bodies is improved by means of the device according to the invention in that substrates or composite bodies to be coated can have a lower temperature level for their coating compared to known methods, which not only protects the components themselves but also results in faster cycle times due to shorter conditioning times and improved economic efficiency.

[0027] Furthermore, it may be expedient if the overlap region corresponds to a cross-sectional area of ​​the first material beam, wherein the cross-sectional area is defined parallel to a substrate surface. This directs the energy input to the entire material components of the first material beam, thus increasing the reactivity of the entire first material beam.

[0028] Furthermore, it can be provided that the first material source is a first plasma source, wherein the first material stream can be provided by a first plasma jet of ionized first coating components, wherein the first coating components comprise material components of a compound semiconductor, a 2D layer, a ceramic material, an amorphous layer, a solid-state battery layer, a metallic layer, in particular a thin metal film, or a metallic hard material.

[0029] The plasma source can be a microwave plasma source, an inductively coupled plasma source (ICP), a capacitively coupled plasma (CCP), a remote plasma source, a sputtering source, in particular a magnetron sputtering source, or an ion source or an ion beam source.

[0030] In addition to the potentially selective coating of substrates with different electrical conductivities, further advantageous applications of this embodiment of the invention with the material source as a plasma source include, for example, substrate cleaning, ion etching, low-loss heating, sputtering with reactive ions, sensitization or charge neutralization, and pumping active gases. In any case, the combination of the first plasma source and the energy beam source enables effective coating of the substrate.

[0031] Furthermore, it can be provided that the device comprises a second material source, wherein a second material flow of the second material source overlaps with the first material flow in the vicinity of the substrate or in the impact area of ​​the second material flow on the substrate, so that a common effective area of ​​the first material flow and the second material flow is formed.

[0032] The first material stream and the second material stream can overlap completely or in sections with respect to their cross-sectional areas, so that, for example, with complete overlap, a common effective area is formed that corresponds to a first cross-sectional area of ​​the first material stream and also to a second cross-sectional area of ​​the second material stream. This allows a substrate to be coated simultaneously with particles or molecules from the first material source and the second material source, without partial areas of the substrate being exposed to only one material stream. At the same time, the entire cross-sectional area of ​​the first material stream and the second material stream can be overlapped by the energy beam.

[0033] In particular, it can be provided that the overlap region and the effective region are largely congruent. Furthermore, it can also be provided that the first material source and the second material source are designed as strip sources. Thus, the effective region can also be strip-shaped and the energy beam can be directed onto the effective region in such a way that the overlap region and the effective region completely overlap or that the overlap region is in any case larger than the effective region, with the effective region being completely included in the overlap region. In this sense, it can also be provided that the energy beam also acts on partial areas of the substrate surface before these are coated. This can bring about an additional energy input into the substrate, which can serve to precondition it.

[0034] In any case, the strip source can, for example,

[0035] - consist of a strip element through which all material components required for supplying the coating components of the compound semiconductor, the 2D layer, the ceramic material, the amorphous layer, the solid-state battery layer or the metallic layer, in particular the thin metal film, or the metallic hard material are passed together;

[0036] - comprise several strip elements through which all required material components are passed individually or in smaller groups;

[0037] - be designed as a strip magnetron source;

[0038] - be designed as a tubular magnetron source; - be designed as a strip evaporator;

[0039] - comprise several evaporator stations which together form a strip;

[0040] - include several ion cannons that together form a strip

[0041] - be designed as a strip ion cannon;

[0042] - have a strip mask equipped with one or more slits through which the required material components exit; or

[0043] - have a strip mask that includes a screen inlet through which the required material components exit.

[0044] Also advantageous is an embodiment according to which it can be provided that the second material source is a second plasma source, wherein the second material stream can be provided by a second plasma jet of ionized second coating components, wherein the second coating components comprise material components of a compound semiconductor, a 2D layer, a ceramic material, an amorphous layer, a solid-state battery layer, a metallic layer, in particular a metal thin film, or a metallic hard material, and wherein the second coating components are different from the first coating components.

[0045] Again, the second material source can be designed as a strip source according to the previous description. In any case, by providing two plasma sources, a possible pre-reaction between the first coating components and the second coating components can be prevented, at least up to a possible overlap of the two material streams in a common active area, so that, for example, no thermal decomposition or other mutual influences of the material streams are triggered.

[0046] According to a further development, it is possible for the energy beam source to be a laser light source, wherein an energy beam that can be generated by means of the laser light source is a laser light beam with a wavelength from a range comprising 157 nm to 10.6 pm. Preferably, the laser light beam has a specific wavelength in order to excite, depending on the coating components used in the material sources, either nitrogen, oxygen, ammonia, ozone, hydrogen, carbon compounds such as methane, silicon, or silicon compounds such as silane, so that the reactivity of the respective coating components in the vicinity of the substrate or on the substrate is increased, so that bonds between the coating components and an uppermost layer of the substrate or on the substrate surface can be formed in an improved manner.In particular, wavelengths of the laser light beam for coating components with a nitrogen content comprising 567.9 nm, 500.5 nm and 399.4 nm are advantageous, whereby the intensity and pulsing of the laser beam can also be adapted to the coating components in order to achieve the highest possible reactivity.

[0047] The invention further relates to a method for producing a composite body with at least one functional layer or for further use in producing an electronic or optoelectronic component or a solid-state battery, wherein the composite body is designed as a layer structure, the layer body comprising

[0048] - at least one substrate formed as a plate with a substrate surface and

[0049] - at least one substantially polycrystalline or at least one substantially monocrystalline layer comprising at least one compound semiconductor, a 2D layer, a ceramic material, an amorphous layer, a solid-state battery layer or a metallic layer, in particular a thin metal film, or a metallic hard material.

[0050] The method according to the invention comprises the following steps:

[0051] - heating the substrate surface or a first partial area of ​​the substrate surface to a temperature of at least 20°C and at most 550°C;

[0052] - Growing the at least one functional layer by supplying first coating components from material components of the compound semiconductor, the 2D layer, the ceramic material, the amorphous layer, the solid-state battery layer or the metallic layer, in particular the metal thin film, or the metallic hard material through a first material flow from a first material source to the substrate surface.

[0053] The method according to the invention is further characterized in that the first material stream is superimposed with an energy beam of an energy beam source in the vicinity of the substrate or in the impact area of ​​the first material stream on the substrate surface, whereby an overlay area is defined.

[0054] In this context, a functional layer is understood to mean, in particular, a layer that is suitable for performing a specified function in an electrical or optical application due to its electrical or optical properties. The terms "composite body," "layer structure," and "layered body" are to be understood in accordance with the cited prior art or the relevant specialist knowledge of the person skilled in the art.

[0055] Furthermore, it may be expedient if the at least one layer is grown by supplying first coating components and second coating components made of material components of the compound semiconductor, the 2D layer, the ceramic material, the amorphous layer, the solid-state battery layer or the metallic layer, in particular the metal thin film, or the metallic hard material through the first material stream from the first material source for the first coating components and through a second material stream from a second material source for the second coating components to the at least one planar substrate surface, wherein the first material stream and the second material stream are superimposed with the energy beam of the energy beam source in the vicinity of the substrate or in the area in which the first material stream strikes the substrate surface, thereby defining the superposition region.This can prevent any mutual influence of the material flows or any undesired pre-reaction of the coating components before they hit the substrate surface. Furthermore, it can be provided that the substrate surface is exposed to the energy beam at an angle of incidence within a range of 0° to 90° relative to the substrate surface, such that the substrate surface or the first partial region of the substrate surface is heated by the energy beam from the energy beam source. This makes it easy to condition the substrate surface or the substrate. This can be achieved, for example, by appropriately rasterizing or scanning the energy beam or by appropriately fanning it out, for example by means of a prism or by providing an array of point sources or individual energy beam sources or by lenses, photomasks and beam splitters.The energy can be distributed over a large area or focused on defined regions, and can be applied at a constant time or in pulsed mode. This essentially allows the substrate to be preconditioned, or more specifically, heated, while simultaneously increasing the reactivity of the material components impinging on the substrate by maintaining the superposition zone.

[0056] Alternatively, the energy beam overlap region can be provided in such a way that the substrate surface remains unaffected by the energy beam. This results in only an overlap of the energy beam and the first material stream(s), so that the substrate is not directly affected by the energy beam, or so that no direct energy input to the substrate surface occurs without at least passing through the overlap region.

[0057] According to a particular embodiment, it is possible for the first material stream and the second material stream to overlap in the vicinity of the substrate or in the area where the material streams impact on the substrate surface, such that a common effective region of the first material stream and the second material stream is formed, wherein the strip-shaped common effective region is overlapped by the energy beam. The overlap of the first material stream and the second material stream can be complete or also sectionally in relation to their cross-sectional areas, such that, for example, in the case of complete overlap, a common effective region is formed which corresponds to a first cross-sectional area of ​​the first material stream and also to a second cross-sectional area of ​​the second material stream. In this way, a substrate can be simultaneously coated with particles orMolecules from the first material source and the second material source can be coated without exposing individual areas of the substrate to only one material stream. At the same time, the entire cross-sectional area of ​​the first material stream and the second material stream can be overlaid by the energy beam.

[0058] In particular, it can be provided that the overlap region and the effective region are largely congruent. Furthermore, it can also be provided that the first material source and the second material source are designed as strip sources. Thus, the effective region can also be strip-shaped and the energy beam can be directed onto the effective region in such a way that the overlap region and the effective region completely overlap or that the overlap region is in any case larger than the effective region, with the effective region being completely included in the overlap region. In this sense, it can also be provided that the energy beam also acts on partial areas of the substrate surface before these are coated. This can bring about an additional energy input into the substrate, which can serve to precondition it.

[0059] Finally, the device according to the invention can also further comprise a mirror device with at least one mirror, by means of which the energy beam of the energy beam source can be deflected, redirected, or reflected in such a way that the overlap region between the energy beam and the active region or at least the first material stream can be formed in the process chamber without being influenced by other components or material sources of the device according to the invention. For a better understanding of the invention, it is explained in more detail with reference to the following figures.

[0060] They show in a highly simplified, schematic representation:

[0061] Fig. 1 shows a first possible embodiment of the device;

[0062] Fig. 2 shows a section through a second possible embodiment of the

[0063] Device;

[0064] By way of introduction, it should be noted that in the variously described embodiments, identical parts are provided with identical reference symbols or component designations. The disclosures contained throughout the description can be applied analogously to identical parts with identical reference symbols or component designations. Furthermore, the positional information chosen in the description, such as top, bottom, side, etc., refers to the directly described and illustrated figure, and these positional information must be applied analogously to the new position in the event of a change in position.

[0065] Fig. 1 shows a first possible embodiment of the device 1 according to the invention in a highly simplified, schematic representation. The device 1 can be used to produce electronic or optoelectronic components or a solid-state battery from a composite body by preferably plasma-assisted chemical vapor deposition or reactive physical vapor deposition or a combination thereof onto a substrate 2. The device 1 can comprise a process chamber 3, a first material source 4 directed onto a substrate 2 that can be accommodated within the process chamber 3, and an energy beam source 5, wherein a first material stream 6 can be generated by means of the first material source 4 and an energy beam 7 can be generated by means of the energy beam source 5. The energy beam source 5 and the first material source 4 can be aligned or arranged relative to one another in such a way that the first material stream 6 is in the close range 8 of the substrate 2 ora substrate surface 11 or in the impact area 9 of the first material stream 6 on the substrate 2 or on the substrate surface 11 by the energy beam 7, wherein an overlay area 10 is defined.

[0066] Furthermore, a second material source 12 can also be provided to provide a second material stream 13. Furthermore, it can be provided that the first material source 4 and the second material source 12 are each plasma sources, and that the material sources 4, 12 are designed as strip sources. As a result, the material sources 4, 12 can each act on a strip-shaped region on the substrate surface 11. This is particularly useful if the first material stream 6 and the second material stream 13 consist of different coating components made of material components of a compound semiconductor, a 2D layer, a ceramic material, a solid-state battery layer, a metallic layer, in particular a thin metal film, or a metallic hard material.The first material stream 6 and the second material stream 13 can be aligned with each other in such a way that a common effective area 15 of the material streams 6, 13 only arises in the near area 8 of the substrate 2. This prevents any mutual influence of the coating components from occurring beforehand. In particular, it can be advantageous if the respective cross-sections of the material streams 6, 13 overlap in the effective area 15 such that the respective cross-sections completely overlap. Furthermore, it can be advantageous if the effective area 15 and the overlap area 10 completely overlap.

[0067] The energy beam source 5 can be arranged such that the energy beam 7 can be provided at an angle of incidence 14 relative to the substrate surface 11 from a range comprising 0° to 90°.

[0068] Fig. 2 shows a section through a possibly independent second embodiment of the device 1, wherein the same reference numerals or component designations as in the previous Fig. 1 are used for the same parts. To avoid unnecessary repetition, reference is made to the detailed description in the previous Fig. 1. From this illustration, in conjunction with Fig. 1, it can be seen that the energy beam 7 can in particular have an angle of incidence 14 of 0° relative to the substrate surface 11. Furthermore, it can be seen that the overlay region 10, as mentioned in the previous description, can act on the substrate 2 as a strip.

[0069] The energy beam source 5 can be understood, for example, as a laser, a discharge lamp, a flash tube, a flash lamp, an excimer, an excimer laser, an excimer flash lamp or an excited dimer, an ion gun, or a magnetron. Furthermore, an energy beam source 5 can be understood as a laser that generates heat, such as a CO2 laser, a diode laser, or an Nd:YAG laser. An energy beam source 5 can also be understood as a flash lamp, by means of which the energy input is achieved according to the device 1 according to the invention.

[0070] The energy beam source 5 can in particular be a laser light source, wherein the energy beam 7 that can be generated by means of the laser light source is a laser light beam with a wavelength from a range comprising 157 nm to 10.6 pm.

[0071] A method according to the invention can be carried out by means of the device according to the invention, as shown in Figs. 1 and 2. In this case, a substrate 2 can initially be provided in the process chamber 3. First, the substrate surface 11 or a partial region of the substrate 2 is heated to a temperature of at least 20°C or room temperature and at most 550°C. Then, at least one functional layer can be grown by supplying first coating components made of material components of a compound semiconductor, a 2D layer, a ceramic material, an amorphous layer, a solid-state battery layer or a metallic layer, in particular a thin metal film, or a metallic hard material through the first material stream 6 from the first material source 4 to the substrate surface 11.The method according to the invention is characterized in that, according to the embodiment of the device, the first material stream 6 in the near region 8 of the substrate 2 or in the impact region 9 of the first material stream 6 on the substrate surface 11 is superimposed with the energy beam 7 of the energy beam source 5, wherein the superimposition region 10 is defined.

[0072] If the material streams 6, 13 or at least one material stream 6 or 13 overlap with the energy beam 7, the reactivity of the particles of the coating components or the material components is increased as described above by the corresponding energy input into the coating components or respectively into the material components or optionally also onto the substrate surface 11. Accordingly, it can also be provided that the energy beam source 5 is used to input energy or, in particular, to input heat into the substrate surface 11 or into the substrate 2, in order, for example, to save on the normally additionally required heating elements in the process chamber 3, since appropriate preconditioning of the substrate 2, in particular with regard to the heat input into the same, can be carried out by means of the energy beam source 5 or, if appropriate, also by means of another energy beam source provided specifically for this purpose.In this context, the energy beam source 5 or the further energy beam source can in particular also be designed as a strip lamp source or as a source for emitting high-energy light or partial spectra of light in order to be able to introduce energy or in particular heat into the substrate 2 as cost-effectively as possible.

[0073] Further possible variations of the respective alignment of the material sources 4 and 12 and the energy beam source 5 relative to one another are conceivable. For example, it may also be expedient if the first material source 4 and the second material source 12 do not overlap, with the energy beam 7 continuing to overlap the first material stream 6, or even with a further energy source (not shown) being provided that overlaps the second material stream 13. A mirror device (not shown) is also conceivable, which reshapes or splits the energy beam 7 in such a way that both material streams 6, 13 can continue to be overlapped with the energy beam source 5.Furthermore, it is also conceivable that the energy beam 7 is directed at an angle of incidence 14 onto the material streams 6, 13 or at least the first material stream 6 in the near area 8 such that not only the coating components experience an energy input from the energy beam 7, but that an energy input is also introduced by the energy beam 7 onto the substrate surface 11 or into the substrate 2.

[0074] The embodiments show possible embodiments, whereby it should be noted at this point that the invention is not limited to the specifically illustrated embodiments thereof, but rather various combinations of the individual embodiments with each other are also possible and this possibility of variation lies within the skill of the person skilled in the art in this technical field due to the teaching of technical action by means of the objective invention.

[0075] The scope of protection is determined by the claims. However, the description and drawings are to be used to interpret the claims.

[0076] Individual features or combinations of features from the various embodiments shown and described may represent independent inventive solutions. The problem underlying the independent inventive solutions can be found in the description.

[0077] All information on value ranges in this description is to be understood as including any and all sub-ranges thereof, e.g. the information 1 to 10 is to be understood as including all sub-ranges, starting from the lower limit of 1 and the upper limit of 10, ie all sub-ranges begin with a lower limit of 1 or greater and end with an upper limit of 10 or less, e.g. 1 to 1.7, or 3.2 to 8.1, or 5.5 to 10.

[0078] For the sake of clarity, it should be noted that some elements have been shown not to scale and / or enlarged and / or reduced in size to improve understanding of the structure.

[0079] device

[0080] Substrat

[0081] trial chamber

[0082] First source of material

[0083] Energy beam source

[0084] First material stream

[0085] Energy beam

[0086] Close range

[0087] Impact area

[0088] Overlay area Substrate surface Second material source

[0089] Second material stream, angle of incidence, effective range

Claims

P a t e n t a n s p r ü c h e 1. Device (1) for producing electronic or optoelectronic components or a solid-state battery as a composite body by preferably plasma-assisted chemical vapor deposition or reactive physical vapor deposition or a combination thereof onto a substrate (2), comprising a process chamber (3), a first material source (4) directed onto a substrate (2) that can be accommodated within the process chamber (3), and an energy beam source (5), wherein a first material stream (6) can be generated by means of the first material source (4) and an energy beam (7) can be generated by means of the energy beam source (5), characterized in that the energy beam source (5) is aligned relative to the first material source (4) in such a way that the first material stream (6) can be superimposed by the energy beam (7) in the vicinity (8) of the substrate (2) or in the impact region (9) of the first material stream (6) on the substrate (2), wherein an overlay region (10) is defined.

2. Device (1) according to claim 1, characterized in that the superposition region (10) corresponds to a cross-sectional area of the first material beam, wherein the cross-sectional area is defined parallel to a substrate surface (11) of the substrate (2).

3. Device (1) according to one of the preceding claims, characterized in that the first material source (4) is a first plasma source, wherein the first material stream (6) can be provided by a first plasma jet of ionized first coating components, wherein the first coating components comprise material components of a compound semiconductor, a 2D layer, a ceramic material, an amorphous layer, a solid-state battery layer or a metallic layer, in particular a thin metal film, or a metallic hard material.

4. Device (1) according to one of the preceding claims, characterized in that the device (1) comprises a second material source (12), wherein a second material flow (13) of the second material source (12) is in the Near area (8) of the substrate (2) or in the impact area (9) of the second material flow (13) on the substrate (2) superimposed with the first material flow (6), so that a common effective area (15) of the first material flow (6) and the second material flow (13) is formed.

5. Device (1) according to claim 4, characterized in that the superimposed area (10) and the effective area (15) are predominantly congruent.

6. Device (1) according to one of claims 4 or 5, characterized in that the second material source (12) is a second plasma source, wherein the second material stream (13) can be provided by a second plasma jet of ionized second coating components, wherein the second coating components comprise material components of a compound semiconductor, a 2D layer, a ceramic material, an amorphous layer, a solid-state battery layer or a metallic layer, in particular a thin metal film, or a metallic hard material, and wherein the second coating components are different from the first coating components.

7. Device (1) according to one of the preceding claims, characterized in that the energy beam source (5) is a laser light source, wherein an energy beam (7) that can be generated by means of the laser light source is a laser light beam with a wavelength from a range comprising 157 nm to 10.6 pm.

8. A method for producing a composite body with at least one functional layer or for further use in producing an electronic or optoelectronic component or a solid-state battery, wherein the composite body is formed as a layer structure, comprising - at least one substrate (2) formed as a plate with a substrate surface (11) and - at least one substantially polycrystalline or at least one substantially monocrystalline layer comprising at least one compound semiconductor, a 2D layer, a ceramic material, an amorphous layer, a solid-state battery layer or a metallic layer, in particular a metal thin film, or a metallic hard material, the method comprising the following steps: - heating the substrate surface (11) or a first partial region of the substrate surface (11) to a temperature of at least room temperature, in particular 20°C, and at most 550°C; - Growing the at least one functional layer by supplying first coating components made of material components of the compound semiconductor, the 2D layer, the ceramic material of the amorphous layer, the solid-state battery layer or the metallic layer, in particular the metal thin film or the metallic hard material, through a first material stream (6) from a first material source (4) to the substrate surface (11); characterized in that the first material stream (6) is superimposed with an energy beam (7) from an energy beam source (5) in the vicinity (8) of the substrate (2) or in the impact region (9) of the first material stream (6) on the substrate surface (11), wherein an overlay region (10) is defined.

9. The method according to claim 8, characterized in that the at least one layer is grown by supplying first coating components and second coating components made of material components of the compound semiconductor, the 2D layer, the ceramic material, the amorphous layer, the solid-state battery layer or the metallic layer, in particular the metal thin film, or the metallic hard material through the first material stream (6) from the first material source (4) for the first coating components and through a second material stream (13) from a second material source (12) for the second coating components to the at least one planar substrate surface (11), wherein the first material stream (6) and the second material stream (13) are superimposed with the energy beam (7) of the energy beam source (5) in the vicinity (8) of the substrate (2) or in the impact area (9) of the first material stream (6) on the substrate surface (11),whereby the overlay area (10) is defined., 10. Method according to one of claims 8 or 9, characterized in that the substrate surface (11) is irradiated with the energy beam (7) at an angle of incidence (14) from a range comprising 0° to 90° relative to the substrate surface (11), so that the substrate surface (11) or the first partial region of the substrate surface (11) is heated by means of the energy beam (7) of the energy beam source (5).

11. Method according to one of claims 8 or 9, characterized in that the superposition region (10) with the energy beam (7) is provided in such a way that the substrate surface (11) remains untouched by the energy beam (7).

12. Method according to one of claims 8 to 11, characterized in that the first material flow (6) and the second material flow (13) overlap in the vicinity (8) of the substrate (2) or in the impact area (9) of the material flows on the substrate surface (11), so that a common effective area (15) of the first material flow (6) and the second material flow (13) is formed, wherein the strip-shaped common effective area (15) is overlapped by the energy beam (7).

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