Method for manufacturing semiconductor device, and sealed body

Abstract

[Problem] To provide a method for manufacturing a semiconductor device, with which it is possible to suppress warpage after molding (after sealing). Further, to provide a sealed body. [Solution] Disclosed is a method for manufacturing a semiconductor device, the method including: a step for supplying an epoxy resin composition onto a laminate, which comprises a support and a semiconductor chip that is mounted on the support, under conditions satisfying XC / XS ≤ 0.3, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), the epoxy resin composition is supplied onto the laminate by means of coating, and a part or the entirety of the coating pattern is curved, linear, or spot-shaped, or a step for supplying an epoxy resin composition to a mold under conditions satisfying XC / XS ≤ 0.3 and subsequently fitting a laminate, which comprises a support and a semiconductor chip that is mounted on the support, to the mold, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), the epoxy resin composition is supplied to the mold by means of coating, and a part or the entirety of the coating pattern is curved, linear, or spot-shaped; and a step for filling the laminate with the epoxy resin composition so as to form a molded body, and curing the molded body so as to seal the semiconductor chip, thereby obtaining a sealed body. XC: the radius of a circle that can be drawn in a range within 90% of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in plan, the circle having the maximum projected area on the support XS: the radius of the support when viewed in plan

Description

Semiconductor device manufacturing method and encapsulated body

[0001] The present invention relates to a method for manufacturing a semiconductor device and a sealed body.

[0002] With the aim of improving the performance, reducing costs, and making semiconductor devices smaller and lighter, high-density packaging is being promoted by increasing the number of layers of semiconductor elements and making packages thinner, etc. Accordingly, electronic components that are roughly the same size as semiconductor elements such as ICs (Integrated Circuits), i.e., CSPs (Chip Size Packages), are widely used.

[0003] Among these, wafer level chip size packaging (WLP) has attracted attention. In WLP, a liquid epoxy resin composition is compression molded at the wafer stage, and the resulting composition is cured to encapsulate a large number of semiconductor elements at once, followed by singulation. Compared to methods in which semiconductor elements are encapsulated after being diced, WLP offers high productivity, but suffers from the problem of wafer warpage after molding (encapsulation). Wafer warpage can have adverse effects, such as insufficient wafer fixation, during subsequent processes such as transportation, grinding, and singulation, which can result in reduced reliability of the semiconductor device.

[0004] In order to solve these problems, various encapsulants have been investigated. For example, Patent Document 1 discloses a liquid encapsulating epoxy resin composition containing a liquid bisphenol-type epoxy resin, silicone rubber fine particles, a silicone-modified epoxy resin, an aromatic amine curing agent, an inorganic filler, and an organic solvent. Also, Patent Document 2 discloses a liquid encapsulating epoxy resin composition containing a liquid epoxy resin, an aromatic amine curing agent, fine particles of a core-shell silicone polymer consisting of a solid silicone polymer core and an organic polymer shell, an inorganic filler, and an organic solvent.

[0005] Furthermore, Cited Document 3 describes a method in which an epoxy resin composition is filled on a laminate including a substrate and a semiconductor element mounted on the substrate so as to cover the entire substrate, thereby forming a molded body, and the molded body is cured to obtain an encapsulated body.

[0006] Furthermore, Cited Document 4 describes a process in which an epoxy resin composition is supplied to the entire surface of a mold, and then a laminate comprising a support and a semiconductor chip mounted on the support is attached to the mold, the epoxy resin composition is filled onto the entire surface of the laminate to form a molded body, and the molded body is cured to obtain a sealed body.

[0007] Patent Document 5 describes a resin supplying method for supplying liquid resin to an object having a narrow portion, the method comprising the steps of: (a) setting the object in a chamber; (b) reducing the pressure in the chamber after step (a); (c) supplying the resin so that it covers the narrow portion after step (b); and (d) pressurizing the chamber after step (c). It also describes that in the resin supplying step, the resin application pattern is partially or entirely curved or linear.

[0008] JP 2007-023272 A JP 2008-150555 A JP 2021-036581 A JP 2004-056141 A JP 2018-134846 A

[0009] However, even when the epoxy resin compositions described in Patent Documents 1 and 2 are used as a sealing material, warpage may occur in the wafer after molding (sealing).

[0010] Furthermore, in the methods described in Patent Documents 3 and 4, although the details of the cause are not clear, warpage of the wafer after molding may occur depending on the components constituting the epoxy resin composition (e.g., epoxy resin, curing agent, inorganic filler, etc.), their types, their contents, the thickness of the epoxy resin composition to be applied, and the application method.

[0011] Furthermore, the invention described in Patent Document 5 does not involve the idea of ​​using a specific epoxy resin composition as a supply material, and therefore the problem of solving wafer warpage cannot be conceived of in the invention. Therefore, the method described in Patent Document 5 cannot solve the problem of wafer warpage.

[0012] Therefore, an object of the present invention is to provide a method for manufacturing a semiconductor device that can prevent warpage of a support (e.g., a wafer) after molding, and to provide a sealed body with reduced warpage.

[0013] As a result of intensive research into achieving the above object, the inventors have found that warpage after molding can be suppressed by manufacturing a semiconductor device using a method including specific steps. The present invention has been completed based on these findings.

[0014] That is, in the present disclosure, a laminate including a support and a semiconductor chip mounted on the support is provided with an X Ｃ / X Ｓ a step of supplying an epoxy resin composition on the laminate by coating the epoxy resin composition on the laminate under conditions such that a ratio of X to X is ≦0.3, the epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is applied to the laminate in a coating pattern that is partially or entirely curved, linear, or spotted; or Ｃ / X Ｓ and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, the epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is applied to the mold by coating, the coating pattern being curved, linear, or spotted in part or in whole; and filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body. Ｃ X: the radius of a circle that can be drawn from the center point of the support so as not to include the supplied epoxy resin composition and within a range of 90% of the radius of the support when viewed in a plane, and that has the largest projected area onto the support Ｓ : Radius of the support when viewed in plan

[0015] In addition, in the present disclosure, a Y is formed on a laminate including a support and a semiconductor chip mounted on the support. Ｒ / Y Ｆ a step of supplying an epoxy resin composition on the laminate by coating the epoxy resin composition on the laminate under conditions such that a ratio of Y to Y is ≦0.8, the epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is applied to the laminate by coating, the application pattern being curved, linear, or spotted in part or in whole; or Ｒ / Y Ｆ a step of supplying an epoxy resin composition under conditions such that a ρ-value of 0.8 or less is satisfied, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied to the mold by coating, the coating pattern being curved, linear, or spotted in part or in whole; and a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body. Ｆ Y: Projected area of ​​the supplied epoxy resin composition on the support Ｒ : Projected area of ​​the supplied epoxy resin composition onto the support, existing within a range of 30% of the radius of the support from the center point of the support

[0016] In addition, the present disclosure provides a method for manufacturing a semiconductor device, comprising: forming an X-ray tube on a laminate including a support and a semiconductor chip mounted on the support; Ｃ / X Ｓ ≦0.3, wherein the thickness of the epoxy resin composition is 1 to 20 mm; or Ｃ / X Ｓand a step of supplying an epoxy resin composition under conditions such that a ρ-value of X is ≦0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains an inorganic filler (C) and the content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is 85% by mass or less; and a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body. Ｃ X: the radius of a circle that can be drawn from the center point of the support so as not to include the supplied epoxy resin composition and within a range of 90% of the radius of the support when viewed in a plane, and that has the largest projected area onto the support Ｓ : Radius of the support when viewed in plan

[0017] In addition, in the present disclosure, a Y is formed on a laminate including a support and a semiconductor chip mounted on the support. Ｒ / Y Ｆ ≦0.8, wherein the thickness of the epoxy resin composition is 1 to 20 mm; or Ｒ / Y Ｆ and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains an inorganic filler (C) and the content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is 85% by mass or less; and filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body. Ｆ Y: Projected area of ​​the supplied epoxy resin composition on the support Ｒ : Projected area of ​​the supplied epoxy resin composition onto the support, existing within a range of 30% of the radius of the support from the center point of the support

[0018] In addition, the present disclosure provides a method for manufacturing a semiconductor device, comprising: forming an X-ray tube on a laminate including a support and a semiconductor chip mounted on the support;Ｃ / X Ｓ ≦0.3, wherein the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; or Ｃ / X Ｓ ≦0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains, as epoxy resin (A), at least one selected from the group consisting of glycidylamine-type epoxy resins, bisphenol-type epoxy resins, and polyalkylene glycol-type diepoxy resins, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; and filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body. Ｃ X: the radius of a circle that can be drawn from the center point of the support so as not to include the supplied epoxy resin composition and within a range of 90% of the radius of the support when viewed in a plane, and that has the largest projected area onto the support Ｓ : Radius of the support when viewed in plan

[0019] In addition, in the present disclosure, a Y is formed on a laminate including a support and a semiconductor chip mounted on the support. Ｒ / Y Ｆ a step of supplying an epoxy resin composition under conditions such that a γ-value of Y is ≦0.8, wherein the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; orＲ / Y Ｆ a step of supplying an epoxy resin composition under conditions such that a ρ-value of Y is ≦0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains, as epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; and a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body. Ｆ Y: Projected area of ​​the supplied epoxy resin composition on the support Ｒ : Projected area of ​​the supplied epoxy resin composition onto the support, existing within a range of 30% of the radius of the support from the center point of the support

[0020] In addition, in the present disclosure, the mold may include X Ｃ / X Ｓ ≦0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains at least one curing agent (B) selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; and filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body. Ｃ X: the radius of a circle that can be drawn from the center point of the support so as not to include the supplied epoxy resin composition and within a range of 90% of the radius of the support when viewed in a plane, and that has the largest projected area onto the support Ｓ : Radius of the support when viewed in plan

[0021] In addition, in the present disclosure, the mold Ｒ / Y Ｆ a step of supplying an epoxy resin composition under conditions such that a ρ-value of Y is ≦0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains at least one curing agent (B) selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; and a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body. Ｆ Y: Projected area of ​​the supplied epoxy resin composition on the support Ｒ : Projected area of ​​the supplied epoxy resin composition onto the support, existing within a range of 30% of the radius of the support from the center point of the support

[0022] In addition, the present disclosure provides a method for manufacturing a semiconductor device, comprising: forming an X-ray tube on a laminate including a support and a semiconductor chip mounted on the support; Ｃ / X Ｓ ≦0.3, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less; or Ｃ / X Ｓ and a step of supplying an epoxy resin composition under conditions such that a ρ-value of X is ≦0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less; and a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body. Ｃ X: the radius of a circle that can be drawn from the center point of the support so as not to include the supplied epoxy resin composition and within a range of 90% of the radius of the support when viewed in a plane, and that has the largest projected area onto the support Ｓ: Radius of the support when viewed in plan

[0023] In addition, in the present disclosure, a Y is formed on a laminate including a support and a semiconductor chip mounted on the support. Ｒ / Y Ｆ a step of supplying an epoxy resin composition under conditions such that a γ-value of Y≦0.8, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less; or Ｒ / Y Ｆ and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, the epoxy resin composition containing an inorganic filler (C) having an average particle size of 5.0 μm or less; and filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body. Ｆ Y: Projected area of ​​the supplied epoxy resin composition on the support Ｒ : Projected area of ​​the supplied epoxy resin composition onto the support, existing within a range of 30% of the radius of the support from the center point of the support

[0024] The epoxy resin composition preferably contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C).

[0025] The content of the inorganic filler (C) is preferably 40 to 95% by mass relative to the epoxy resin composition (100% by mass).

[0026] The inorganic filler (C) is preferably silica.

[0027] The epoxy resin composition is preferably an epoxy resin composition that is liquid at 25°C.

[0028] The viscosity of the epoxy resin composition (25° C., Brookfield viscometer, 10 rpm) is preferably 50 to 250 Pa·s.

[0029] The amount of warpage of the sealing body at 25° C. measured by a shadow moire device is preferably 4000 μm or less.

[0030] The present disclosure also provides a sealed body in which a laminate including a support and a semiconductor chip mounted on the support is sealed with a cured product of an epoxy resin composition, wherein the sealed body has a warpage of 4000 μm or less at 25° C. as measured with a shadow moiré device.

[0031] In addition, the present disclosure provides a method for manufacturing a semiconductor device, comprising: forming an X-ray tube on a laminate including a support and a semiconductor chip mounted on the support; Ｃ / X Ｓ ≦0.3, or a step of supplying an epoxy resin composition to a mold under conditions such that X Ｃ / X Ｓ and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold after supplying an epoxy resin composition under conditions such that the ratio of the epoxy resin composition to the epoxy resin composition is ≦0.3. The laminate is filled with the epoxy resin composition to form a molded body, and the molded body is cured to encapsulate the semiconductor chip, thereby obtaining an encapsulated body. Ｃ X: the radius of a circle that can be drawn from the center point of the support so as not to include the supplied epoxy resin composition and within a range of 90% of the radius of the support when viewed in a plane, and that has the largest projected area onto the support Ｓ : Radius of the support when viewed in plan

[0032] In addition, in the present disclosure, a Y is formed on a laminate including a support and a semiconductor chip mounted on the support. Ｒ / Y Ｆ or a step of supplying an epoxy resin composition to a mold under conditions such that Y Ｒ / Y Ｆ and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold. The epoxy resin composition is filled into the laminate to form a molded body, and the molded body is cured to encapsulate the semiconductor chip, thereby obtaining a sealed body. Ｆ Y: Projected area of ​​the supplied epoxy resin composition on the support Ｒ: Projected area of ​​the supplied epoxy resin composition onto the support, existing within a range of 30% of the radius of the support from the center point of the support

[0033] The amount of warpage of the sealing body at 25° C. measured by a shadow moire device is preferably 4000 μm or less.

[0034] According to the manufacturing method of the semiconductor device of the present disclosure, warping of the support after molding (sealing) can be suppressed. Therefore, subsequent processes such as transportation, grinding, and singulation can be efficiently performed, and the reliability of the resulting semiconductor device is improved. Furthermore, since the sealed body of the present disclosure has small warping of the support, it can be singulated with high precision. Therefore, by using the above-described sealed body, a highly reliable semiconductor device can be obtained.

[0035] 1A and 1B are diagrams illustrating embodiments A1 and A2 in the method for manufacturing a semiconductor device of the present disclosure. FIG. 1C is a diagram illustrating embodiments B1 and B2 in the method for manufacturing a semiconductor device of the present disclosure. FIG. 1D is an explanatory diagram for embodiment A1. FIG. 1E is an explanatory diagram for embodiment A2. FIG. 1F is a coating pattern of the supplied epoxy resin composition in the examples. FIG. 1G is a coating pattern of the supplied epoxy resin composition in the examples. The outer circles of the coating patterns (a) to (c) coincide with the edges of the corresponding support.

[0036] <Method for manufacturing semiconductor device> The present disclosure provides a method for manufacturing a semiconductor device, including the steps of: supplying an epoxy resin composition under specific conditions onto a laminate including a support and a semiconductor chip mounted on the support; or supplying the epoxy resin composition under specific conditions and then mounting the laminate including the support and the semiconductor chip mounted on the support in the mold; and filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body.

[0037] One embodiment of the present disclosure provides a laminate including a support and a semiconductor chip mounted on the support, the laminate including an X Ｃ / X Ｓ≦0.3, or a step of supplying an epoxy resin composition to a mold under conditions such that X Ｃ / X Ｓ ≦0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold; and filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body. Ｃ X: The radius of a circle that can be drawn within a range of 90% of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the largest projected area onto the support Ｓ : Radius of the support when viewed in plan

[0038] In another embodiment of the present disclosure, a Y-type semiconductor substrate is provided on a laminate including a support and a semiconductor chip mounted on the support. Ｒ / Y Ｆ or a step of supplying an epoxy resin composition to a mold under conditions such that Y Ｒ / Y Ｆ ≦0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold (hereinafter referred to as the "composition supplying step"); and filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to encapsulate the semiconductor chip, and obtaining an encapsulated body (hereinafter referred to as the "molding and encapsulating step"). Ｆ Y: Projected area of ​​the supplied epoxy resin composition on the support Ｒ : Projected area of ​​the supplied epoxy resin composition on the support, which is present within a range of 30% of the radius of the support from the center point of the support

[0039] The one embodiment of the present disclosure provides a stacked body including a support and a semiconductor chip mounted on the support, the stacked body including an X Ｃ / X Ｓand filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body (hereinafter referred to as "embodiment A1"). Ｃ / X Ｓ and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, and filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body (hereinafter referred to as "embodiment B1").

[0040] X Ｃ The following will explain the phrase "the radius of a circle that can be drawn within a range of 90% of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in plan, and that has the largest projected area onto the support." Ｃis the radius of a circle that can be drawn from the center of the support within 90% of the support's radius when viewed in plan, so that the supplied epoxy resin composition is not contained within the circle. In other words, the circle is drawn so that the epoxy resin composition is not present within the circle, and the location where the circle is drawn is within 90% of the support's radius from the center of the support. The circle is the circle that has the largest projected area when projected onto the support. "A circle that can be drawn within 90% of the support's radius" means that the entire circle exists within 90% of the support's radius when viewed in plan. As described below, the shape of the support when viewed in plan is not particularly limited, but may be, for example, a circle or a rectangle. When the shape of the support when viewed in plan is circular, the "center point of the support" refers to the center of the support when viewed as a circle. When the shape of the support when viewed in plan is rectangular, the "center point of the support" refers to the center of the circumscribing circle of the support. When the shape of the support is rectangular in plan view, the "radius of the support" refers to the radius of the circumscribing circle of the rectangular support. "Within 90% of the radius of the support from the center point of the support" refers to a range within a distance from the "center point of the support" that is 0.9 times the "radius of the support." In other words, when a circle is drawn with the "center point of the support" as its center and a radius 0.9 times the length of the "radius of the support," the range refers to the range enclosed by the circle.

[0041] In the invention according to the above embodiment, in the composition supplying step, X Ｃ / X Ｓ By supplying the epoxy resin composition under the condition that X≦0.3, warpage after molding can be suppressed. The reason for this is not clear, but it is thought that by supplying the epoxy resin composition under the above conditions, the components contained in the epoxy resin composition are uniformly filled into the laminate. Ｃ / X Ｓ The range is not particularly limited as long as it is 0.3 or less, but is preferably 0.25 or less, more preferably 0.2 or less, even more preferably 0.15 or less, particularly preferably 0.1 or less, and most preferably 0.05 or less.

[0042] The invention according to the embodiment of A1 will be explained with reference to Fig. 3. Fig. 3 shows a plan view of a laminate including a support and a semiconductor chip mounted on the support, to which an epoxy resin composition has been supplied. 21 is the support, 22 is the supplied (applied) epoxy resin composition, 23 is a circle that describes an area within 90% of the radius of the support, 24 is a circle that has the largest projected area onto the support, and L11 is the radius (X Ｓ ), L12 is the radius of the circle whose projected area onto the support is the largest (X Ｃ The invention according to the embodiment of B1 differs from the invention according to the embodiment of A1 in that the epoxy resin composition is supplied to a mold rather than to a laminate. Ｃ / X Ｓ The method for specifying the condition for ≦0.3 is the same as that described with reference to FIG.

[0043] The other embodiment of the present disclosure is a laminate including a support and a semiconductor chip mounted on the support, and a Y Ｒ / Y Ｆ and filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body (hereinafter referred to as "embodiment A2"). Ｒ / Y Ｆ and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold. The epoxy resin composition is then supplied under conditions such that the ρ-value of the epoxy resin composition is 0.8 or less, and the laminate is then fitted with the mold. The epoxy resin composition is then filled into the laminate to form a molded body, and the molded body is cured to encapsulate the semiconductor chip, thereby obtaining an encapsulated body (hereinafter referred to as "embodiment B2").

[0044] Y ＲThe phrase "within 30% of the radius of the support from the center point of the support" in the above description will be explained. As described below, the shape of the support in plan view is not particularly limited, and may be, for example, circular or rectangular. When the shape of the support in plan view is circular, the "center point of the support" refers to the center of the support when viewed as a circle. When the shape of the support in plan view is rectangular, the "center point of the support" refers to the center of the circumscribing circle of the support. When the shape of the support in plan view is rectangular, the "radius of the support" refers to the radius of the circumscribing circle of the rectangular support. "Within 30% of the radius of the support from the center point of the support" refers to a range from the "center point of the support" to a distance that is 0.3 times the "radius of the support." In other words, when a circle is drawn with the "center point of the support" as its center and a radius that is 0.3 times the length of the "radius of the support," the range refers to the range enclosed by the circle.

[0045] In the invention according to the other embodiment, in the composition supplying step, Y Ｒ / Y Ｆ By supplying the epoxy resin composition under conditions where Y is ≦0.8, warpage after molding can be suppressed. The reason for this is not clear, but it is thought that supplying the epoxy resin composition under the above conditions allows the components contained in the epoxy resin composition to be uniformly filled into the laminate. Ｒ / Y Ｆ The range is not particularly limited as long as it is 0.8 or less, but is preferably 0.7 or less, more preferably 0.6 or less, more preferably 0.5 or less, even more preferably 0.4 or less, particularly preferably 0.3 or less, and most preferably 0.2 or less.

[0046] The invention according to the embodiment A2 will be explained with reference to Fig. 4. Fig. 4 shows a plan view of a laminate including a support and a semiconductor chip mounted on the support, to which an epoxy resin composition has been supplied. 31 denotes the support, 32 denotes the supplied (applied) epoxy resin composition, 33 denotes a circle that describes an area within 30% of the radius of the support, L21 denotes the radius of the support, and L22 denotes a distance that is 30% of the radius of the support. The invention according to the embodiment A2 differs from the invention according to the embodiment B2 in that the epoxy resin composition is supplied to a mold rather than to a laminate, but Y Ｒ / Y Ｆ The method for specifying the condition for ≦0.8 is the same as that described with reference to FIG.

[0047] In the case of one-point supply (for example, one-point application) to the laminate (specifically, X Ｃ / X Ｓ The effects of the present disclosure will be explained by comparing the case where X exceeds 0.3. When filling a laminate with an epoxy resin composition, if it is supplied at one point (for example, applied at one point), the movement distance of the epoxy resin composition is long, and therefore, due to differences in the fluidity of the components contained therein (for example, epoxy resin and inorganic filler), the distribution of these components tends to be non-uniform. In contrast, when X is applied at one point as in the present disclosure, Ｃ / X Ｓ When the epoxy resin composition is supplied under the conditions where the temperature is in the above range, the travel distance of the epoxy resin composition is short and the distribution of the components is uniform, which is thought to lead to the prevention of warpage after molding.

[0048] In the case of single-point supply (for example, single-point application) to the center of the laminate (specifically, Y Ｒ / Y Ｆ The effect of the present disclosure will be explained by comparing the case where Y = 1 with the case where Y = 1. When the epoxy resin composition is supplied at a single point to the center of the laminate, the epoxy resin composition moves a long distance when the epoxy resin composition is filled into the laminate in the case where Y = 1. In contrast, when the epoxy resin composition is supplied at a single point (for example, by applying it at a single point), the difference in fluidity of the components contained therein (for example, the epoxy resin and the inorganic filler) tends to result in uneven distribution of these components. Ｒ / Y ＦWhen the epoxy resin composition is supplied under the conditions where the temperature is in the above range, the travel distance of the epoxy resin composition is short and the distribution of the components is uniform, which is thought to lead to the prevention of warpage after molding.

[0049] In the above-described embodiment, the application pattern in the present disclosure is X Ｃ / X Ｓ is not particularly limited as long as it is within the above range. Ｒ / Y Ｆ is not particularly limited as long as it is within the above range. For example, it can be applied uniformly (for example, over the entire surface of the laminate), or in a curved pattern such as a circular or spiral pattern, or in a linear pattern such as a radial pattern, a striped pattern (a pattern in which parallel lines are arranged at equal intervals), or a mesh pattern (a pattern in which lines intersect in a grid pattern), or in a spotted pattern. Among these, when the coating is uniform or when the coating pattern is partially or entirely linear (particularly striped), warpage after molding tends to be smaller. Furthermore, when the coating is uniform, warpage after molding tends to be particularly small. The reason for this is not clear, but the following explanation is possible.

[0050] - Explanation in the case of uniform application Warpage after molding is thought to be caused by the epoxy resin composition not being filled uniformly into the laminate. For example, if the epoxy resin composition is not applied uniformly to the surface of the laminate, the epoxy resin composition filled into the laminate is also unlikely to be uniform, and warpage after molding tends to be large. On the other hand, if the epoxy resin composition is applied uniformly to the surface of the laminate, the epoxy resin composition filled into the laminate is also likely to be uniform, and warpage after molding tends to be small.

[0051] The method for uniformly applying the epoxy resin composition to the surface of the laminate is not particularly limited, and examples thereof include screen printing, spin coating, spray coating, airbrushing, roller coating, blade coating, coating using a wide line, and manual coating.

[0052] Explanation of the case where a part or all of the coating pattern is linear (particularly striped): Wafers such as silicon wafers are obtained by slicing a single crystal ingot along the crystal orientation. Therefore, the surface of a wafer has a directional property resulting from the crystal structure and slicing. When the coating pattern is linear, a part or all of the pattern can be formed along the directional property on the wafer surface. Forming a linear pattern along the directional property on the wafer surface tends to improve the fluidity of the epoxy resin composition, uniformly fill the laminate with the epoxy resin composition, and further reduce warpage after molding. When the coating pattern is striped, the above tendency is particularly pronounced, possibly because the linear pattern is formed parallel to the directional property on the wafer surface. When the coating pattern is striped, it is preferable that the striped pattern be surrounded by a circular pattern, as shown in Figures 5(b) and 6(b). Furthermore, it is preferable that the center of the circular pattern coincides with the center point of the support, and in this case, the radius of the circular pattern is preferably 60 to 95% of the radius of the support, more preferably 70 to 90%, and even more preferably 80 to 88%. The spacing of the stripe pattern is not particularly limited, but is preferably 2 to 20% of the radius of the support, more preferably 3 to 10%, and even more preferably 4 to 8%.

[0053] As mentioned above, when the coating pattern is uniform, warpage after molding tends to be smaller. On the other hand, when the coating pattern is partially or entirely curved, such as circular or spiral, linear, such as radial, striped (a pattern in which parallel lines are arranged at equal intervals), and mesh (a pattern in which lines intersect in a grid pattern), or spotted, it is preferable from the viewpoint of efficiently manufacturing a semiconductor device, since coating does not require time and effort. When the coating pattern is partially or entirely linear (especially striped), it is particularly efficient.

[0054] The line width of the epoxy resin composition in the composition supplying step of the present disclosure is not particularly limited as long as it does not impair the effects of the present disclosure, but is, for example, preferably 0.1 to 30 mm, more preferably 0.1 to 20 mm, even more preferably 0.1 to 15 mm, more preferably 0.1 to 12 mm, more preferably 0.1 to 9 mm, more preferably 0.1 to 6 mm, even more preferably 0.1 to 5 mm, and particularly preferably 0.1 to 4.5 mm. The line width refers to the width of the epoxy resin composition when the supplied epoxy resin composition is viewed in a plan view parallel to the surface of the support.

[0055] The thickness (height) of the epoxy resin composition in the composition supplying step of the present disclosure is not particularly limited as long as it does not impair the effects of the present disclosure, but is, for example, preferably 1 to 20 mm, more preferably 1 to 15 mm, even more preferably 1 to 10 mm, and particularly preferably 1 to 5 mm. The thickness (height) of the epoxy resin composition means the thickness (height) of the supplied epoxy resin composition in the direction perpendicular to the surface of the support.

[0056] When the epoxy resin composition is supplied at a single point (for example, by single-point application) to the center point of the laminate, the thickness of the epoxy resin composition tends to exceed the above range, which is not preferable because the travel distance of the epoxy resin composition becomes long, as will be described later.

[0057] In addition to the composition supplying step and the molding / sealing step, the method for manufacturing a semiconductor device according to the present disclosure may include at least one step selected from the group consisting of a laminate preparation step, a grinding step, and a singulation step, which will be described later.

[0058] [Laminate Preparation Step] The laminate preparation step is a step of preparing a laminate including a support and a semiconductor chip mounted on the support by mounting a semiconductor chip on the support. In the laminate, the support and the semiconductor chip may be connected via solder. More specifically, the semiconductor chip may have solder bumps and may be connected to the support via the solder bumps. Furthermore, the support may also have solder bumps and may be connected to the semiconductor chip via the solder bumps.

[0059] In this step, the connection between the support and the semiconductor chip is not limited to via solder, but may be made using, for example, an adhesive film or adhesive sheet such as a die attach film (DAF).

[0060] That is, this process may be a process of preparing a laminate by mounting a semiconductor chip having solder bumps on a support and connecting the semiconductor chip and the support via the solder bumps. Alternatively, this process may be a process of preparing a laminate by mounting a semiconductor chip on a support having solder bumps and connecting the semiconductor chip and the support via the solder bumps. Alternatively, this process may be a process of preparing a laminate by mounting a semiconductor chip having solder bumps on a support having solder bumps and connecting the semiconductor chip and the support via the solder bumps. Alternatively, this process may be a process of preparing a laminate by mounting and connecting a semiconductor chip on a support via the adhesive film or adhesive sheet.

[0061] The support is not particularly limited, but examples thereof include a silicon wafer, a silicon carbide wafer, a sapphire wafer, a compound semiconductor wafer (gallium phosphide, gallium arsenide, indium phosphide, gallium nitride), and a glass epoxy substrate. The shape of the support in a plan view is not particularly limited, but is, for example, a circular or rectangular shape.

[0062] [Composition Supplying Step] In the present disclosure, the composition supplying step is a step of supplying an epoxy resin composition under the specific conditions onto a laminate including a support and a semiconductor chip mounted on the support, or a step of supplying an epoxy resin composition under the specific conditions to a mold and then mounting a laminate including a support and a semiconductor chip mounted on the support into the mold.

[0063] In the embodiment of A1 or A2, the composition supplying step comprises disposing X Ｃ / X Ｓ ≦0.3 or Y Ｒ / Y ＦThe composition supplying step may include a step of attaching a mold to the laminate, the mold being used to form a molded body in the molding and sealing step. That is, the composition supplying step includes a step of attaching an epoxy resin composition to a laminate including a support and a semiconductor chip mounted on the support, the mold being used to form a molded body in the molding and sealing step, the epoxy resin composition being attached to the laminate under the condition that X Ｃ / X Ｓ ≦0.3 or Y Ｒ / Y Ｆ The epoxy resin composition may be supplied under the condition that the modulus of elasticity is ≦0.8, and then a mold may be attached to the laminate.

[0064] In the embodiment of B1 or B2, the composition supplying step is performed by adding X Ｃ / X Ｓ ≦0.3 or Y Ｒ / Y Ｆ and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold. Note that modes of supplying the epoxy resin composition to the mold include not only supplying (e.g., applying) the epoxy resin composition directly to the mold, but also supplying (e.g., applying) the epoxy resin composition to a sheet made of paper, plastic, or the like and then placing the sheet on the mold.

[0065] When the present disclosure includes a laminate preparation step, the composition supply step is a step that follows the laminate preparation step.

[0066] (Epoxy Resin Composition) The epoxy resin composition preferably contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C).

[0067] Epoxy Resin (A) The epoxy resin composition contains the epoxy resin (A), which allows it to form a cured product with high electrical insulation. The epoxy resin (A) is not particularly limited, but examples include aromatic epoxy resins and aliphatic epoxy resins. The number of epoxy groups in the epoxy resin (A) is not particularly limited as long as it is one or more, but it is preferably two or more (i.e., a multifunctional epoxy resin). The number of epoxy groups in the epoxy resin (A) is also not particularly limited, but it is preferably five or less, for example. The epoxy resin (A) can be used alone or in combination of two or more.

[0068] The epoxy resin (A) may be liquid or solid at room temperature (25°C). However, from the viewpoint of the viscosity of the epoxy resin composition, it is preferably liquid at room temperature (25°C). At room temperature (25°C), the viscosity of the epoxy resin (A) is, for example, preferably 50,000 mPa·s or less, more preferably 40,000 mPa·s or less, even more preferably 30,000 mPa·s or less, and particularly preferably 20,000 mPa·s or less. Even a solid epoxy resin can be preferably used when it is used in combination with a liquid epoxy resin to form a liquid mixture. The content of the liquid epoxy resin relative to the total amount of the epoxy resin (A) is not particularly limited, but is, for example, preferably 50% by mass or more, more preferably 75% by mass or more, even more preferably 90% by mass or more, and particularly preferably 95% by mass or more.

[0069] The aromatic epoxy resin is not particularly limited as long as it is an epoxy resin having a structure containing an aromatic ring such as a benzene ring, but examples thereof include bisphenol-type epoxy resins such as bisphenol A-type epoxy resins and bisphenol F-type epoxy resins, novolac-type epoxy resins, fluorene-type epoxy resins, biphenyl aralkyl epoxy resins, diepoxy resins such as 1,4-phenyldimethanol diglycidyl ether, biphenyl-type epoxy resins such as 3,3',5,5'-tetramethyl-4,4'-diglycidyloxybiphenyl, glycidylamine-type epoxy resins such as diglycidylaniline, diglycidyltoluidine, and tetraglycidyl-m-xylylenediamine, aminophenol-type epoxy resins such as triglycidyl-p-aminophenol, and naphthalene ring-containing epoxy resins. Among these, bisphenol-type epoxy resins such as glycidylamine-type epoxy resins, bisphenol A-type epoxy resins, and bisphenol F-type epoxy resins, biphenyl-type epoxy resins, aminophenol-type epoxy resins, and naphthalene ring-containing epoxy resins are preferred.

[0070] The aliphatic epoxy resin is not particularly limited, but examples thereof include diepoxy resins (particularly mono- or polyalkylene glycol diepoxy resins) such as ethylene glycol diglycidyl ether, 1,4-butanediol diglycidyl ether, 1,4-hexanediol diglycidyl ether, 1,6-hexanediol diglycidyl ether, trimethylolpropane diglycidyl ether, glycerin diglycidyl ether, neopentyl glycol diglycidyl ether, polyethylene glycol diglycidyl ether, and polytetramethylene glycol diglycidyl ether; trimethylolpropane triglycidyl ether; Examples of epoxy resins include triepoxy resins such as vinyl(3,4-cyclohexene) dioxide and glycerin triglycidyl ether; alicyclic epoxy resins such as vinyl(3,4-epoxycyclohexyl)-5,1-spiro-(3,4-epoxycyclohexyl)-m-dioxane; glycidylamine epoxy resins such as tetraglycidyl bis(aminomethyl)cyclohexane; hydantoin epoxy resins such as 3-diglycidyl-5-methyl-5-ethylhydantoin; and epoxy resins having a silicone skeleton such as 1,3-bis(3-glycidoxypropyl)-1,1,3,3-tetramethyldisiloxane. Among these, preferred are monoalkylene glycol diepoxy resins such as ethylene glycol diglycidyl ether, 1,4-hexanediol diglycidyl ether, and 1,4-butanediol diglycidyl ether, and polyalkylene glycol diepoxy resins such as polytetramethylene glycol diglycidyl ether and polyethylene glycol diglycidyl ether. The molecular weight of the aliphatic epoxy resin (when the aliphatic epoxy resin is a polymer, the molecular weight is the number average molecular weight in terms of standard polystyrene determined by gel permeation chromatography (GPC) using tetrahydrofuran as an elution solvent) is not particularly limited, but is, for example, preferably 200 to 10,000, more preferably 200 to 1,200, even more preferably 200 to 1,000, and particularly preferably 300 to 900.

[0071] The content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is not particularly limited, but is, for example, preferably 3 to 50% by mass, more preferably 5 to 40% by mass, even more preferably 8 to 30% by mass, and particularly preferably 10 to 25% by mass. When the content of the epoxy resin (A) is within the above range, the thermal expansion of the cured product tends to be reduced and the toughness tends to be improved.

[0072] When the epoxy resin (A) contains a bisphenol-type epoxy resin, the content of the bisphenol-type epoxy resin relative to the epoxy resin (A) (100% by mass) is not particularly limited, but is, for example, preferably 0.1 to 80% by mass, more preferably 1 to 60% by mass, and even more preferably 10 to 50% by mass.

[0073] When the epoxy resin (A) contains a glycidylamine-type epoxy resin, the content of the glycidylamine-type epoxy resin relative to the epoxy resin (A) (100 mass%) is not particularly limited, but is, for example, preferably 0.1 to 80 mass%, more preferably 1 to 60 mass%, and even more preferably 10 to 50 mass%.

[0074] When the epoxy resin (A) contains a naphthalene ring-containing epoxy resin, the content of the naphthalene ring-containing epoxy resin relative to the epoxy resin (A) (100 mass%) is not particularly limited, but is, for example, preferably 0.1 to 80 mass%, more preferably 1 to 60 mass%, and even more preferably 10 to 50 mass%.

[0075] When the epoxy resin (A) contains a polyalkylene glycol-type diepoxy resin, the content of the polyalkylene glycol-type diepoxy resin relative to the epoxy resin (A) (100% by mass) is not particularly limited, but is, for example, preferably 0.1 to 80% by mass, more preferably 1 to 60% by mass, and even more preferably 10 to 50% by mass.

[0076] Curing agent (B) The curing agent (B) is not particularly limited as long as it initiates, progresses, or accelerates the polymerization of the epoxy resin, and examples thereof include amine-based curing agents, acid anhydride-based curing agents, phenol-based curing agents, and imidazole-based curing agents. The curing agent (B) can be used alone or in combination of two or more.

[0077] Examples of the amine-based curing agent include aromatic amines such as 4,4'-diamino-3,3'-diethyldiphenylmethane, diethyltoluenediamine, dimethylthiotoluenediamine, methylenedianiline, m-phenylenediamine, 4,4'-diaminodiphenylsulfone, and 3,3'-diaminodiphenylsulfone. Examples of the acid anhydride-based curing agent include alkylated tetrahydrophthalic anhydrides such as methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, hexahydrophthalic anhydride, phthalic anhydride, dodecenyl succinic anhydride, and methylnadic anhydride. Examples of the phenol-based curing agent include phenol novolac resin, cresol novolac resin, naphthol-modified phenolic resin, dicyclopentadiene-modified phenolic resin, and p-xylene-modified phenolic resin. Examples of the imidazole curing agent include 2-methylimidazole, 2-undecylimidazole, 1-cyanoethyl-2-undecylimidazole, 2-heptadecylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-ethyl-4-imidazole, 2-phenylimidazole, and 2-phenyl-4-methylimidazole. Examples of the imidazole curing agent also include microcapsule-type imidazole curing agents.

[0078] The content of the curing agent (B) relative to the epoxy resin composition (100% by mass) is not particularly limited, but is preferably 0.1 to 30% by mass, more preferably 0.3 to 20% by mass, even more preferably 0.5 to 15% by mass, and particularly preferably 1 to 12% by mass. Having the content of the curing agent (B) within the above range tends to improve the appearance of the cured product. Furthermore, having the content of the curing agent (B) within the above range allows for appropriate adjustment of the curing time of the epoxy resin composition. For example, when the epoxy resin composition is used for compression molding, the curing time is not too long, improving the productivity of electronic components, and warpage is suppressed after the epoxy resin composition is applied to a wafer mounted with semiconductor chips and cured. Furthermore, the storage stability of the epoxy resin composition is improved.

[0079] Inorganic Filler (C) The inorganic filler (C) is not particularly limited, but is preferably one that has the property of suppressing volumetric shrinkage (cure shrinkage) caused by the curing reaction of the epoxy resin composition, one that has the property of suppressing volumetric change due to heat (thermal shrinkage) of the cured product, or one that has both of these properties. Examples of inorganic fillers (C) include silica, silicon carbide, silicon nitride, alumina (aluminum oxide), aluminum nitride, aluminum hydroxide, aluminum silicate, magnesium silicate, calcium silicate, calcium carbonate, barium sulfate, barium carbonate, titanium oxide, lime sulfate, potassium titanate, magnesium oxide, magnesium carbonate, zinc oxide, boron nitride, zirconia (zirconium oxide), and inorganic particles having their surfaces treated. The inorganic fillers (C) can be used alone or in combination of two or more.

[0080] Among these, silica, alumina, aluminum nitride, magnesium oxide, and zinc oxide are preferred as the inorganic filler (C), more preferably silica, alumina, and aluminum nitride, and even more preferably silica. This is because, while a high thermal expansion of the inorganic filler (C) tends to make warpage after molding more likely to occur, silica has low thermal expansion and therefore tends to make warpage after molding less likely to occur.

[0081] In order to maintain the viscosity of the epoxy resin composition within an appropriate range, the inorganic filler (C) is preferably surface-treated with a coupling agent having a functional group such as an epoxy group, a (meth)acryloyl group, or an amino group. Examples of the coupling agent include silane coupling agents such as 3-glycidoxypropyltrimethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, and N-phenyl-3-aminopropyltrimethoxysilane. For the surface treatment of the inorganic filler (C), one of the above coupling agents can be used alone, or two or more can be used in combination.

[0082] The shape of the inorganic filler (C) is not particularly limited, and examples thereof include spherical (e.g., spherical, nearly spherical), polyhedral, rod-like (e.g., cylindrical, prismatic), plate-like, flaky, and irregular shapes. Among these, spherical shapes are preferred from the viewpoint of enabling a high loading amount.

[0083] The average particle size of the inorganic filler (C) is not particularly limited, but is preferably 1 nm or more, more preferably 3 nm or more, even more preferably 5 nm or more, even more preferably 10 nm or more, even more preferably 15 nm or more, even more preferably 20 nm or more, even more preferably 25 nm or more, even more preferably 30 nm or more, even more preferably 35 nm or more, even more preferably 40 nm or more, and particularly preferably 45 nm or more. Also, for example, it is preferably 5.0 μm or less, more preferably 3.0 μm or less, even more preferably 2.0 μm or less, even more preferably 1.5 μm or less, even more preferably 1.0 μm or less, even more preferably 0.8 μm or less, and particularly preferably 0.6 μm or less. When the average particle size of the inorganic filler (C) is within the above range, the epoxy resin composition has an appropriate viscosity, and warpage after molding tends to be less likely to occur. In the present specification, the method for measuring the average particle size of the inorganic filler (C) is not particularly limited, but for example, it can be measured using a laser diffraction / scattering particle size distribution analyzer (product name: LS 13 320, manufactured by Beckman Coulter, Inc.).

[0084] The maximum particle size of the inorganic filler (C) is not particularly limited, but is, for example, preferably 5 nm or more, more preferably 10 nm or more, even more preferably 20 nm or more, even more preferably 40 nm or more, even more preferably 100 nm or more, even more preferably 200 nm or more, even more preferably 250 nm or more, even more preferably 300 nm or more, even more preferably 400 nm or more, particularly preferably 500 nm or more. Also, for example, it is preferably 20.0 μm or less, more preferably 10.0 μm or less, even more preferably 5.0 μm or less, even more preferably 3.0 μm or less, even more preferably 1.0 μm or less, even more preferably 0.8 μm or less, particularly preferably 0.5 μm or less.

[0085] The content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is not particularly limited, but is, for example, preferably 40% by mass or more, more preferably 50% by mass or more, and even more preferably 60% by mass or more. When the content of the inorganic filler (C) is within the above range, warping after molding tends to be suppressed.

[0086] The content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is not particularly limited, but from the viewpoints of ensuring an appropriate viscosity for the epoxy resin composition, reducing warpage after molding, and improving workability in preparing the epoxy resin composition, the content is preferably 95% by mass or less, more preferably 90% by mass or less, even more preferably 88% by mass or less, and particularly preferably 85% by mass or less.

[0087] In one embodiment of the present disclosure, the content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is preferably 65 to 88% by mass, more preferably 68 to 88% by mass, and even more preferably 70 to 85% by mass.

[0088] Other Components The epoxy resin composition may contain components other than the epoxy resin (A), curing agent (B), and inorganic filler (C) (hereinafter referred to as "other component (D)"). Examples of the other component (D) include curable compounds other than the epoxy resin (A), thermoplastic resins such as polyethylene resins, polyester resins, polyurethane resins, and polyamide resins, coupling agents, ion trapping agents, leveling agents, antioxidants, antifoaming agents, flame retardants, colorants, reactive diluents, elastomers, and solvents. The other component (D) may be used alone or in combination of two or more.

[0089] The content of the other component (D) relative to the epoxy resin composition (100% by mass) is not particularly limited as long as it does not impair the effects of the present disclosure, but is, for example, preferably 0.001 to 10% by mass, more preferably 0.01 to 5% by mass, and even more preferably 0.1 to 3% by mass.

[0090] Physical Properties and Production Method of Epoxy Resin Composition The viscosity of the epoxy resin composition (25°C, Brookfield viscometer, 10 rpm) is not particularly limited, but is, for example, preferably 1 to 500 Pa s, more preferably 5 to 400 Pa s, even more preferably 10 to 300 Pa s, particularly preferably 50 to 250 Pa s, and most preferably 100 to 200 Pa s. When the viscosity is within the above range, warping after molding is inhibited and workability tends to improve.

[0091] The epoxy resin composition can be prepared by a known, commonly used method. For example, the epoxy resin (A), curing agent (B), inorganic filler (C), and, if necessary, other components (D) can be simultaneously or separately introduced into an appropriate mixer and stirred and mixed while melting by heating as necessary to obtain the epoxy resin composition. When the epoxy resin (A) is solid, it is preferably liquefied or fluidized by heating before mixing. If it is difficult to uniformly disperse the inorganic filler (C) in the epoxy resin composition, the epoxy resin and inorganic filler (C) can be heated and mixed to uniformly disperse the inorganic filler (C) in the epoxy resin, followed by cooling as necessary, and then mixing with components such as the curing agent (B). This can also be used to prepare the epoxy resin composition.

[0092] The mixer is not particularly limited, and examples thereof include a roll mill equipped with a stirrer and a heater, a Raikai mixer, a Henschel mixer, a tumbler, a planetary mixer, etc. The mixing ratio of each component is appropriately set depending on the content of each component in the epoxy resin composition.

[0093] [Molding and Encapsulating Step] The molding and encapsulating step is a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to encapsulate the semiconductor chip, and obtaining an encapsulated body. This step may include two steps: a step of filling the laminate with the epoxy resin composition to form a molded body (molding step), and a step of curing the molded body obtained by the molding step to encapsulate the semiconductor chip, thereby obtaining an encapsulated body (encapsulating step).

[0094] The method for forming the molded body is not particularly limited, but examples include a method in which a mold attached to the laminate is pressed toward the laminate (support) (hereinafter, this may be referred to as "compression"), and the interior of the mold is depressurized as necessary, to form a compression-molded body containing the laminate and an epoxy resin composition. In this process, when the interior of the mold is depressurized, the depressurization may be carried out before or simultaneously with compression. In other words, the molding process can be rephrased as a process in which the epoxy resin composition is filled into the laminate (semiconductor chip) by compression and / or depressurization. In this compression process, instead of pressing the mold toward the laminate (support), the laminate (support) may be pressed toward the mold, or the mold and the laminate (support) may be narrowed relative to each other.

[0095] As a method for forming a molded article, for example, an epoxy resin composition that has been heated to reduce its viscosity as necessary is decompressed using a molding device, and a laminate is sealed with the epoxy resin composition to obtain a molded article. When the epoxy resin composition is heated to reduce its viscosity, the temperature is not particularly limited, and is, for example, preferably 30 to 200°C, and more preferably 40 to 150°C.

[0096] The decompression rate during compression molding is not particularly limited, but is preferably 10 to 350 torr / second, more preferably 50 to 330 torr / second, and even more preferably 150 to 310 torr / second. Here, the "decompression rate" is the decompression rate shown by the following formula (S), where the units of the initial pressure and the decompression limit pressure are "torr", and the unit of the time to reach the decompression limit pressure is "second", and the decompression limit pressure is a change of 5 torr / second or less. When the pressure is reduced, the pressure drops rapidly, but once the pressure is reduced to a certain level, the rate of pressure drop slows down. When this pressure drop reaches 5 torr or less per second, it is considered that the decompression limit pressure has been reached. (Decompression rate) = (Initial pressure - Decompression limit pressure) / (Time to reach the decompression limit pressure) Formula (S)

[0097] When curing the molded body to encapsulate the semiconductor chip, the epoxy resin composition may be cured by heating. The curing temperature is not particularly limited, but is preferably, for example, 110 to 200°C, and more preferably 120 to 150°C. The curing time is not particularly limited, but is, for example, preferably 30 minutes to 7 hours, more preferably 1 to 6 hours, even more preferably 1 to 4 hours, and particularly preferably 1 to 2 hours.

[0098] [Grinding Step] The grinding step is a step in which the encapsulant portion on the surface on the semiconductor chip side is ground to flatten and thin the encapsulated body obtained in the molding and encapsulation step, and to expose a part of the semiconductor chip as needed. The grinding method is not particularly limited, and commercially available grinding wheels and grinding devices can be used.

[0099] (Sealed Product) The sealed product is a laminate including a support and a semiconductor chip mounted on the support, sealed with a cured product of an epoxy resin composition. The sealed product may be obtained through the molding and sealing process, or may be obtained by further passing through the grinding process.

[0100] The amount of warpage of the sealed body at 25°C measured using a shadow moiré device is not particularly limited, but is preferably 4000 μm or less, more preferably 3900 μm or less, even more preferably 3800 μm or less, particularly preferably 3700 μm or less, and most preferably 3600 μm or less. The amount of warpage is also not particularly limited, but is, for example, greater than 0 μm, 1 μm or more, 10 μm or more, 50 μm or more, 100 μm or more, 200 μm or more, or 300 μm or more. The amount of warpage can be measured, for example, by the method described in the Examples below.

[0101] The warpage improvement rate (%) of the encapsulated body at 25°C measured by a shadow moiré device is not particularly limited, but is preferably 3% or more, more preferably 5% or more, even more preferably 8% or more, particularly preferably 10% or more, and most preferably 14% or more. The warpage improvement rate (%) can be calculated using the following formula: Warpage improvement rate (%) = [1 - (amount of warpage of the encapsulated body) / (amount of warpage when the application method is single-point application)] x 100

[0102] [Singulation Process] The singulation process is a process for singulating the sealed body obtained in the molding and sealing process or the sealed body ground in the grinding process. The singulation process may be a process for singulating the sealed body after removing it from the mold. In the singulation process, gaps between the plurality of semiconductor elements mounted on the support and sealed with the cured product of the epoxy resin composition are cut using a means such as a dicing blade or a laser to obtain a semiconductor device. The method of singulation is not particularly limited, and a commercially available singulation device can be used.

[0103] (Semiconductor Device) The semiconductor device of the present disclosure comprises a support, a semiconductor element mounted on the support, and a cured product of the epoxy resin composition that encapsulates the semiconductor element. The semiconductor device is preferably a flip-chip type semiconductor device. The flip-chip type semiconductor device has a structure in which the support and the semiconductor element are connected via bumps (bump electrodes). In addition, in the semiconductor device, the gap between the semiconductor element and the support is encapsulated with a cured product (encapsulant) of the epoxy resin composition.

[0104] Hereinafter, an embodiment of a method for manufacturing a semiconductor device will be described with reference to FIGS. 1 and 2, but the invention according to the present disclosure is not limited to this.

[0105] 1 (corresponding to embodiments A1 and A2) A semiconductor chip 1 having solder bumps 2 on one surface is mounted on a support 3, and a laminate 4 including the semiconductor chip 1, the solder bumps 2, and the support 3 in this order is prepared (laminate preparation step, (a) of FIG. 1). An epoxy resin composition 5 is applied to the semiconductor chip 1 of the laminate 4 in the amount of X Ｃ / XＳ ≦0.3 [X Ｃ X: the radius of a circle that can be drawn from the center point of the support within a range of 90% of the radius of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the largest projected area onto the support; Ｓ : Radius of the support when viewed in a plane], or Y Ｒ / Y Ｆ ≦0.8 [Y Ｆ : Projected area of ​​the supplied epoxy resin composition on the support, Y Ｒ The epoxy resin composition is supplied using a nozzle 6 under the conditions of: [the projected area of ​​the supplied epoxy resin composition on the support, present within a range of 30% of the support radius from the center point of the support], and then a mold 7 is attached (composition supplying step, (b) and (c) of FIG. 1). The attached mold 7 is pressed toward the support 3, and the pressure inside the mold 7 is reduced as necessary to form a compression-molded body 8 containing a laminate 4 and an epoxy resin composition 5 (molding step, (d) of FIG. 1). Note that in this step, instead of pressing the mold 7 toward the support 3, the support 3 may be pressed toward the mold 7, or the mold 7 and the support 3 may be narrowed relative to each other. The compression-molded body 8 is thermally cured to seal the semiconductor chip 1, thereby forming a sealed body 9 (sealing step, (e) of FIG. 1). After the mold 7 is removed, the sealed body 9 containing the semiconductor chip 1 is singulated (singulation step, (f) and (g) of FIG. 1). Example 1 described below is a disclosure corresponding to this embodiment.

[0106] 2 (corresponding to the embodiments B1 and B2) A semiconductor chip 11 having solder bumps 12 on one surface is mounted on a support 13, and a laminate 14 including the semiconductor chip 11, the solder bumps 12, and the support 13 in this order is prepared (a laminate preparation step, (a) of FIG. 2). Ｃ / X Ｓ ≦0.3 [X Ｃ X: the radius of a circle that can be drawn from the center point of the support within a range of 90% of the radius of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the largest projected area onto the support; Ｓ: Radius of the support when viewed in a plane], or Y Ｒ / Y Ｆ ≦0.8 [Y Ｆ : Projected area of ​​the supplied epoxy resin composition on the support, Y Ｒ The epoxy resin composition 15 is supplied using a nozzle 16 under the condition that the area of ​​the supplied epoxy resin composition on the support is within 30% of the radius of the support from the center point of the support, and then the laminate 14 is placed in a mold 17 (composition supplying step, (b) and (c) of FIG. 2). The pressure inside the mold 17 is reduced, and a compression-molded body 18 containing the laminate 14 and the epoxy resin composition 15 is formed (molding step, (d) of FIG. 2). The compression-molded body 18 is thermally cured to seal the semiconductor chip 11, thereby forming a sealed body 19 (sealing step, (e) of FIG. 2). After the mold 17 is removed, the sealed body 19 containing the semiconductor chip is divided into individual pieces (singulation step, (f) and (g) of FIG. 1). Example 2 described below is a disclosure corresponding to this embodiment.

[0107] (Examples of Embodiments of A1) - Embodiment A1-1 An embodiment of A1 in which, in the step of supplying an epoxy resin composition, the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied onto a laminate by coating, and further, the coating pattern is partially or entirely curved, linear, or spotted, is referred to as embodiment A1-1.

[0108] That is, in embodiment A1-1, a stacked body including a support and a semiconductor chip mounted on the support is provided with X Ｃ / X Ｓ a step of supplying an epoxy resin composition on the laminate under conditions such that a σ-value of σ is ≦0.3, the epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied by coating onto the laminate, the coating pattern being curved, linear, or spotted in part or in whole; and a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body.

[0109] In embodiment A1-1, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0110] Embodiment A1-2 In the embodiment of A1, an embodiment in which the thickness of the epoxy resin composition in the step of supplying the epoxy resin composition is 1 to 20 mm is referred to as embodiment A1-2.

[0111] That is, in embodiment A1-2, a stacked body including a support and a semiconductor chip mounted on the support is provided with X Ｃ / X Ｓ ≦0.3, wherein the thickness of the epoxy resin composition is 1 to 20 mm; and filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body.

[0112] In embodiment A1-2, in the step of supplying the epoxy resin composition, the thickness of the supplied epoxy resin composition is 1 to 20 mm, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0113] Embodiment A1-3: In the embodiment of A1, in the step of supplying an epoxy resin composition, the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass, this is referred to as embodiment A1-3.

[0114] That is, in embodiment A1-3, a stacked body including a support and a semiconductor chip mounted on the support is provided with X Ｃ / X Ｓ ≦0.3, wherein the epoxy resin composition contains, as epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; and

[0115] In embodiment A1-3, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0116] Embodiment A1-4 In the embodiment of A1, an embodiment in which the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less in the step of supplying the epoxy resin composition is referred to as embodiment A1-4.

[0117] That is, in embodiment A1-4, a stacked body including a support and a semiconductor chip mounted on the support is provided with X Ｃ / X Ｓ≦0.3, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less; and filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body.

[0118] In embodiment A1-4, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0119] (Examples of Embodiments of B1) - Embodiment B1-1 An embodiment of B1 in which, in the step of supplying an epoxy resin composition, the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied onto a laminate by coating, and further, the coating pattern is partially or entirely curved, linear, or spotted, is referred to as embodiment B1-1.

[0120] That is, in the embodiment B1-1, the mold is Ｃ / X Ｓ a step of supplying an epoxy resin composition under conditions such that a refractive index of the epoxy resin composition is ≦0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support into the mold, wherein the epoxy resin composition comprises an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied to the mold by coating, the coating pattern being curved, linear, or spotted in part or in whole; and a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body.

[0121] In embodiment B1-1, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0122] Embodiment B1-2 In the embodiment of B1, in the step of supplying an epoxy resin composition, the epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is 85% by mass or less. This is referred to as embodiment B1-2.

[0123] That is, in the embodiment B1-2, the mold has X Ｃ / X Ｓ and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains an inorganic filler (C) and the content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is 85% by mass or less; and filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body.

[0124] In embodiment B1-2, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is 85% by mass or less, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0125] Embodiment B1-3 In the embodiment of B1, in the step of supplying an epoxy resin composition, the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass, which is referred to as Embodiment B1-3.

[0126] That is, in the embodiment B1-3, the mold has X Ｃ / X Ｓ ≦0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains, as epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; and filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body.

[0127] In embodiment B1-3, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0128] Embodiment B1-4 In the embodiment of B1, in the step of supplying an epoxy resin composition, the epoxy resin composition contains, as the curing agent (B), at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass. This is referred to as Embodiment B1-4.

[0129] That is, in the embodiment B1-4, the mold has X Ｃ / X Ｓ ≦0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains, as a curing agent (B), at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; and filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body.

[0130] In embodiment B1-4, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains, as the curing agent (B), at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0131] Embodiment B1-5 In the embodiment of B1, an embodiment in which the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less in the step of supplying the epoxy resin composition is referred to as embodiment B1-5.

[0132] That is, in the embodiment B1-5, the mold has XＣ / X Ｓ and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, the epoxy resin composition containing an inorganic filler (C) having an average particle size of 5.0 μm or less; and filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body.

[0133] In Embodiment B1-5, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0134] (Examples of Embodiments of A2) - Embodiment A2-1 In the embodiment of A2, in the step of supplying an epoxy resin composition, the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied onto a laminate by coating, and the coating pattern is partially or entirely curved, linear, or spotted. This is referred to as embodiment A2-1.

[0135] That is, in embodiment A2-1, a Y is formed on a laminate including a support and a semiconductor chip mounted on the support. Ｒ / Y Ｆ a step of supplying an epoxy resin composition on the laminate under conditions such that a ρ-value of ρ is ≦0.8, the epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied by coating onto the laminate, the coating pattern being curved, linear, or spotted in part or in whole; and a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body.

[0136] In embodiment A2-1, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0137] Embodiment A2-2 In the embodiment of A2, an embodiment in which the thickness of the epoxy resin composition in the step of supplying the epoxy resin composition is 1 to 20 mm is referred to as embodiment A2-2.

[0138] That is, in embodiment A2-2, a Y is formed on a laminate including a support and a semiconductor chip mounted on the support. Ｒ / Y Ｆ ≦0.8, wherein the thickness of the epoxy resin composition is 1 to 20 mm; and filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body.

[0139] In embodiment A2-2, in the step of supplying an epoxy resin composition, the thickness of the supplied epoxy resin composition is 1 to 20 mm, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0140] Embodiment A2-3: In the embodiment of A2, in the step of supplying an epoxy resin composition, the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass. This is referred to as embodiment A2-3.

[0141] That is, in embodiment A2-3, a Y is formed on a laminate including a support and a semiconductor chip mounted on the support. Ｒ / YＦ ≦0.8, wherein the epoxy resin composition contains, as epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; and

[0142] In embodiment A2-3, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0143] Embodiment A2-4 In the embodiment of A2, an embodiment in which the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less in the step of supplying the epoxy resin composition is referred to as embodiment A2-4.

[0144] That is, in embodiment A2-4, a Y is formed on a laminate including a support and a semiconductor chip mounted on the support. Ｒ / Y Ｆ a step of supplying an epoxy resin composition under conditions such that a ρ-value of 0.8 or less is satisfied, the epoxy resin composition containing an inorganic filler (C) having an average particle size of 5.0 μm or less; and a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body.

[0145] In embodiment A2-4, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0146] (Examples of Embodiments of B2) - Embodiment B2-1 In the embodiment of B2, in the step of supplying an epoxy resin composition, the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied onto a laminate by coating, and the coating pattern is partially or entirely curved, linear, or spotted. This is referred to as embodiment B2-1.

[0147] That is, in the embodiment B2-1, the mold is Ｒ / Y Ｆ a step of supplying an epoxy resin composition under conditions such that a refractive index of the epoxy resin composition is ≦0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support into the mold, wherein the epoxy resin composition comprises an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied to the mold by coating, the coating pattern being curved, linear, or spotted in part or in whole; and a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body.

[0148] In embodiment B2-1, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), which causes warping of the support. However, by supplying the epoxy resin composition onto the laminate under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0149] Embodiment B2-2 In the embodiment of B2, in the step of supplying an epoxy resin composition, the epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is 85% by mass or less. This embodiment is referred to as Embodiment B2-2.

[0150] That is, in embodiment B2-2, the mold is Ｒ / Y Ｆ ≦0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains an inorganic filler (C) and the content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is 85% by mass or less; and filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body.

[0151] In embodiment B2-2, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is 85% by mass or less, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0152] Embodiment B2-3 In the embodiment of B2, in the step of supplying an epoxy resin composition, the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass, which is referred to as Embodiment B2-3.

[0153] That is, in the embodiment B2-3, the mold is Ｒ / Y Ｆ≦0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains, as epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; and filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body.

[0154] In embodiment B2-3, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0155] Embodiment B2-4 In the embodiment of B2, in the step of supplying an epoxy resin composition, the epoxy resin composition contains, as the curing agent (B), at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass. This is referred to as Embodiment B2-4.

[0156] That is, in embodiment B2-4, the mold is Ｒ / Y Ｆ≦0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains, as a curing agent (B), at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; and filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body.

[0157] In embodiment B2-4, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains, as the curing agent (B), at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0158] Embodiment B2-5 In the embodiment of B2, an embodiment in which the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less in the step of supplying the epoxy resin composition is referred to as embodiment B2-5.

[0159] That is, in embodiment B2-5, the mold is Ｒ / Y Ｆ and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, the epoxy resin composition containing an inorganic filler (C) having an average particle size of 5.0 μm or less; and filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body.

[0160] In embodiment B2-5, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0161] In the step of supplying the epoxy resin composition in the embodiments of A1, A2, B1, and B2, it is preferable that the epoxy resin composition is not supplied to an area extending from the center point of the support to a radius of the support that is greater than 90%. If the epoxy resin composition is supplied to this area, the epoxy resin composition may leak out of the support during the step of forming a molded product, which may have adverse effects such as contaminating the equipment.

[0162] The present disclosure will be described in more detail below based on examples, but the present disclosure is not limited to these examples.

[0163] Compositions A and B having the compositions shown in Table 1 were prepared by appropriately selecting and mixing epoxy resin (A), curing agent (B), and inorganic filler (C) so as to obtain the blending ratios shown in Table 1. The numerical values ​​for each composition in Table 1 represent the mass ratios of the blended components.

[0164] Each component in Table 1 will be explained below. Epoxy resin (A) EP-3950L (product name): glycidylamine type epoxy resin, liquid at 25°C, manufactured by ADEKA Corporation SE-300P (product name): glycidylamine type epoxy resin, liquid at 25°C, manufactured by Shin-A T&C Corporation YX7400N (product name): polyalkylene glycol type epoxy resin, liquid at 25°C, manufactured by Mitsubishi Chemical Corporation RE410-S (product name): bisphenol type A type epoxy resin, liquid at 25°C, manufactured by Nippon Kayaku Co., Ltd. YDF-8170GSF: bisphenol type F type epoxy resin, liquid at 25°C, manufactured by Nippon Steel Chemical & Material Co., Ltd. Curing agent (B) MEH-8005 (product name): phenolic curing agent (phenol novolac), manufactured by Meiwa Chemical Industry Co., Ltd. 2MZA-PW (product name): 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, manufactured by Shikoku Chemical Industry Co., Ltd. Inorganic filler (C) SE101G-SMO (product name): average particle size 0.3 μm, maximum particle size 5.0 μm or less, 3-glycidoxypropyltrimethoxysilane, surface-treated silicon dioxide, manufactured by Admatechs Co., Ltd. YA050-SM1 (product name): average particle size 0.05 μm, maximum particle size 0.25 μm or less, 3-methacryloxypropyltrimethoxysilane, surface-treated silicon dioxide, manufactured by Admatechs Co., Ltd.

[0165]

[0166] Examples 1 and 2 and Comparative Example 1 The following experiments were carried out using a molding device, product name "WCM-300" manufactured by Apic Yamada Co., Ltd., which corresponds to the embodiments A1 and A2 described in FIG.

[0167] A WALTS FBW40A (10 mm die) and a Bare (20 mm die) were mounted at four locations on the north, south, east, and west sides of a 12-inch circular wafer as a support, to obtain a laminate. Composition A was supplied to this laminate. The amount of composition A supplied was the same in the examples and comparative examples. The application patterns during supply were a uniform application as shown in (a) of FIG. 5 (Example 1), a pattern application with a stripe pattern as shown in (b) of FIG. 5 (Example 2), and a single-point application (single-point application) as shown in (c) of FIG. 5 (Comparative Example 1). The thickness of composition A in Example 1 was 1 mm, the thickness of composition A in Example 2 was 4 mm, and the thickness of composition A in Comparative Example 1 was more than 20 mm.

[0168] The radius of the wafer is 12 inches (about 150 mm), and "within 90% of the radius of the support" corresponds to a range of 1.08 inches (about 135 mm) from the center point of the wafer.

[0169] From here, X Ｃ / X Ｓ is the radius of a circle that can be drawn within a range of 1.08 inches from the center point of the support so as not to include the supplied composition A when viewed in a plane, and that has the largest projected area on the support (i.e., X Ｃ ) is the radius of the support (i.e., X Ｓ ) and divide by the calculated X Ｃ / X Ｓ The values ​​are shown in Table 2.

[0170] Furthermore, "within 30% of the radius of the support" corresponds to a range of 0.36 inches (approximately 45 mm) from the center point of the wafer. Ｒ / Y Ｆ is the projected area of ​​the supplied composition A on the support within a range of 0.36 inches from the center point of the support (i.e., Y Ｒ ) is applied to the entire support by projecting the area of ​​the composition A onto the support (i.e., Y Ｆ ) can be calculated by dividing the calculated Y Ｒ / Y Ｆ The values ​​are shown in Table 2.

[0171] Thereafter, a mold was attached to the laminate, and a compression molded body was formed by compression and decompression. Furthermore, the compression molded body was thermally cured to form an encapsulated body. These operations were performed under the conditions of a mold temperature of 120 ° C, a mold cure time of 400 seconds, a clamping force of 250 kN, and a PMC (Post Mold Cure) of 150 ° C / hr. Using the obtained encapsulated body, the amount of warpage at 25 ° C was measured using a shadow moiré device (manufactured by Akrometrix, AXP 2.0-DFP2). Note that the cured product was placed on a horizontal table with the cured surface facing up, and the highest position was taken as the amount of warpage. The calculated warpage (μm) value and the warpage improvement rate (%) are shown in Table 2.

[0172] Examples 3 and 4 and Comparative Example 2 The following experiments were carried out using a molding device, product name "CPM-1080" manufactured by TOWA Corporation, which corresponds to the embodiments B1 and B2 described in FIG.

[0173] Composition A was supplied to the mold. The amount of composition A supplied was the same in the examples and comparative examples. The application patterns during supply were uniform application as shown in (a) (Example 3), partially striped pattern application as shown in (b) (Example 4), and single-point supply (single-point application) as shown in (c) (Comparative Example 2) in FIG. 6. A 12-inch circular wafer equipped with an FBW40A (10 mm die) and a Bare (20 mm die) manufactured by ON Semiconductor was used as the support, and a laminate was formed. The thickness of composition A in Example 3 was 1 mm, the thickness of composition A in Example 4 was 4 mm, and the thickness of composition A in Comparative Example 2 was more than 20 mm.

[0174] The radius of the wafer is 12 inches (about 150 mm), and "within 90% of the radius of the support" corresponds to a range of 1.08 inches (about 135 mm) from the center point of the wafer.

[0175] From here, X Ｃ / X Ｓ is the radius of a circle that can be drawn within a range of 1.08 inches from the center point of the support so as not to include the supplied composition A when viewed in a plane, and that has the largest projected area on the support (i.e., XＣ ) is the radius of the support (i.e., X Ｓ ) and divide by the calculated X Ｃ / X Ｓ The values ​​are shown in Table 2.

[0176] Also, Y Ｒ / Y Ｆ is the projected area of ​​the supplied composition A on the support within a range of 0.36 inches from the center point of the support (i.e., Y Ｒ ) is applied to the entire support by projecting the area of ​​the composition A onto the support (i.e., Y Ｆ ) can be calculated by dividing the calculated Y Ｒ / Y Ｆ The values ​​are shown in Table 2.

[0177] The laminate was placed in a mold and compressed and decompressed to form a compression molded body. The compression molded body was then thermally cured to form a sealed body. These operations were performed under the following conditions: mold temperature 120°C, mold cure time 400 seconds, clamping force 250 kN, PMC 150°C / hr. The warpage of the resulting sealed body was measured at 25°C using a shadow moiré device. The cured surface was placed on a horizontal table, and the highest position was used as the warpage. The calculated warpage (μm) and warpage improvement rate (%) are shown in Table 2.

[0178] (Examples 5 and 6 and Comparative Example 3) Sealed bodies were produced in the same manner as in Examples 1 and 2 and Comparative Example 1, except that Composition B was used instead of Composition A (Examples 5 and 6 and Comparative Example 3, respectively). Ｃ / X Ｓ The value of the calculated Y Ｒ / Y Ｆ The calculated warpage (μm) value and the warpage improvement rate (%) are shown in Table 2. The thickness of composition B in Example 5 was 1 mm, the thickness of composition B in Example 6 was 4 mm, and the thickness of composition B in Comparative Example 3 was more than 20 mm.

[0179]

[0180] REFERENCE SIGNS LIST 1 semiconductor chip 2 solder bump 3 support 4 laminate 5 epoxy resin composition 6 nozzle 7 mold 8 compression molded body 9 encapsulant 11 semiconductor chip 12 solder bump 13 support 14 laminate 15 epoxy resin composition 16 nozzle 17 mold 18 compression molded body 19 encapsulant 21 support 22 epoxy resin composition Epoxy resin composition supplied (applied) 23 circle drawing an area within 90% of the radius of the support 24 circle with the largest projected area on the support L11 radius of the support (X Ｃ ) L12 Radius of the circle whose projected area onto the support is maximum (X Ｓ ) 31 Support 32 Epoxy resin composition Supplied (applied) epoxy resin composition 33 Circle drawing a range within 30% of the radius of the support L21 Radius of the support L22 Distance of 30% of the radius of the support

Claims

1. A laminate including a support and a semiconductor chip mounted on the support is provided with an X Ｃ / X Ｓ A step of supplying an epoxy resin composition under conditions such that a ratio of X to X is ≦0.3, the epoxy resin composition comprising an epoxy resin (A), a curing agent (B) and an inorganic filler (C), and the epoxy resin composition is supplied onto the laminate by coating, the coating pattern being curved, linear or spotted in part or in whole, or Ｃ / X Ｓ A method for manufacturing a semiconductor device, comprising: a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, the epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied to the mold by coating, the coating pattern being curved, linear, or spotted in part or in whole; and a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body. Ｃ X: the radius of a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the maximum projected area on the support Ｓ : Radius of support when viewed in plan 2. A laminate including a support and a semiconductor chip mounted on the support is provided with Y. Ｒ / Y Ｆ A step of supplying an epoxy resin composition on the laminate under conditions such that a ratio of Y to Y is ≦0.8, the epoxy resin composition comprising an epoxy resin (A), a curing agent (B) and an inorganic filler (C), and the epoxy resin composition is supplied onto the laminate by coating, the coating pattern being curved, linear or spotted in part or in whole, or Ｒ / Y Ｆ A method for manufacturing a semiconductor device, comprising: a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, the epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied to the mold by coating, the coating pattern being curved, linear, or spotted in part or in whole; and a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to encapsulate the semiconductor chip, and obtaining an encapsulated body. Ｆ Y: Projected area of ​​the supplied epoxy resin composition on the support Ｒ : Projected area of ​​the supplied epoxy resin composition on the support, existing within a range of 30% of the radius of the support from the center point of the support 3. A laminate including a support and a semiconductor chip mounted on the support is provided with X Ｃ / X Ｓ ≦0.3, and the thickness of the epoxy resin composition is 1 to 20 mm; or Ｃ / X Ｓ A method for manufacturing a semiconductor device, comprising: a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, the epoxy resin composition containing an inorganic filler (C) and a content of the inorganic filler (C) relative to the epoxy resin composition (100 mass%) being 85 mass% or less; and a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body. Ｃ X: the radius of a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the maximum projected area on the support Ｓ : Radius of support when viewed in plan 4. A laminate including a support and a semiconductor chip mounted on the support is provided with Y. Ｒ / Y Ｆ ≦0.8, and the epoxy resin composition has a thickness of 1 to 20 mm; or Ｒ / Y Ｆ A method for manufacturing a semiconductor device, comprising: a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains an inorganic filler (C) and the content of the inorganic filler (C) relative to the epoxy resin composition (100 mass%) is 85 mass% or less; and a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body. Ｆ Y: Projected area of ​​the supplied epoxy resin composition on the support Ｒ : Projected area of ​​the supplied epoxy resin composition on the support, existing within a range of 30% of the radius of the support from the center point of the support 5. A laminate including a support and a semiconductor chip mounted on the support is provided with X Ｃ / X Ｓ ≦0.3, wherein the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine type epoxy resin, a bisphenol type epoxy resin, and a polyalkylene glycol type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%, or Ｃ / X Ｓ A method for manufacturing a semiconductor device, comprising: a step of supplying an epoxy resin composition under conditions such that a molecular weight ratio (Mg / mol) of the epoxy resin composition is ≦0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains at least one selected from the group consisting of glycidylamine type epoxy resins, bisphenol type epoxy resins, and polyalkylene glycol type diepoxy resins as epoxy resin (A), and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%, and a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to encapsulate the semiconductor chip, and obtaining an encapsulated body. Ｃ X: the radius of a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the maximum projected area on the support Ｓ : Radius of support when viewed in plan 6. A laminate including a support and a semiconductor chip mounted on the support is provided with Y. Ｒ / Y Ｆ ≦0.8, wherein the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine type epoxy resin, a bisphenol type epoxy resin, and a polyalkylene glycol type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%, or Ｒ / Y Ｆ A method for manufacturing a semiconductor device, comprising: a step of supplying an epoxy resin composition under conditions such that a molecular weight ratio (Mg / mol) of the epoxy resin composition is ≦0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains at least one selected from the group consisting of a glycidylamine type epoxy resin, a bisphenol type epoxy resin, and a polyalkylene glycol type diepoxy resin as an epoxy resin (A), and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%, and a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to encapsulate the semiconductor chip, and obtaining an encapsulated body. Ｆ Y: Projected area of ​​the supplied epoxy resin composition on the support Ｒ : Projected area of ​​the supplied epoxy resin composition on the support, existing within a range of 30% of the radius of the support from the center point of the support 7. X in the mold Ｃ / X Ｓ A method for manufacturing a semiconductor device, comprising: a step of supplying an epoxy resin composition under conditions such that a molecular weight ratio (Mg / mol) of the epoxy resin composition is ≦0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent as a curing agent (B), and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%, and a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to encapsulate the semiconductor chip, and obtaining an encapsulated body. Ｃ X: the radius of a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the maximum projected area on the support Ｓ : Radius of support when viewed in plan 8. Y in the mold Ｒ / Y Ｆ A method for manufacturing a semiconductor device, comprising: a step of supplying an epoxy resin composition under conditions such that a molecular weight ratio (Mg / mol) of the epoxy resin composition is less than or equal to 0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains at least one curing agent (B) selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%, and a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body. Ｆ Y: Projected area of ​​the supplied epoxy resin composition on the support Ｒ : Projected area of ​​the supplied epoxy resin composition on the support, existing within a range of 30% of the radius of the support from the center point of the support 9. A laminate including a support and a semiconductor chip mounted on the support is provided with X Ｃ / X Ｓ ≦0.3, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less; or Ｃ / X Ｓ A method for manufacturing a semiconductor device, comprising: a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, the epoxy resin composition containing an inorganic filler (C) having an average particle size of 5.0 μm or less; and a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to encapsulate the semiconductor chip, and obtaining an encapsulated body. Ｃ X: the radius of a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the maximum projected area on the support Ｓ : Radius of support when viewed in plan 10. A laminate including a support and a semiconductor chip mounted on the support, Ｒ / Y Ｆ ≦0.8, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less; or Ｒ / Y Ｆ A method for manufacturing a semiconductor device, comprising: a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, the epoxy resin composition containing an inorganic filler (C) having an average particle size of 5.0 μm or less; and a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to encapsulate the semiconductor chip, and obtaining an encapsulated body. Ｆ Y: Projected area of ​​the supplied epoxy resin composition on the support Ｒ : Projected area of ​​the supplied epoxy resin composition on the support, existing within a range of 30% of the radius of the support from the center point of the support 11. The method for manufacturing a semiconductor device according to any one of claims 3 to 10, wherein the epoxy resin composition comprises an epoxy resin (A), a curing agent (B), and an inorganic filler (C).

12. A method for manufacturing a semiconductor device according to any one of claims 1 to 4, 9, and 10, wherein the content of the inorganic filler (C) is 40 to 95 mass % relative to the epoxy resin composition (100 mass %).

13. The method for producing a semiconductor device according to any one of claims 1 to 4, 9, and 10, wherein the inorganic filler (C) is silica.

14. The method for manufacturing a semiconductor device according to any one of claims 1 to 10, wherein the epoxy resin composition is a liquid epoxy resin composition at 25°C.

15. The method for manufacturing a semiconductor device according to claim 14, wherein the viscosity of the epoxy resin composition (25° C., Brookfield viscometer, 10 rpm) is 50 to 250 Pa·s.

16. The method for manufacturing a semiconductor device according to any one of claims 1 to 10, wherein the amount of warpage of the sealing body at 25°C measured by a shadow moire device is 4000 µm or less.

17. A sealed body in which a laminate having a support and a semiconductor chip mounted on the support is sealed with a cured product of an epoxy resin composition, wherein the amount of warping of the sealed body at 25°C measured with a shadow moire device is 4000 μm or less.

18. A laminate including a support and a semiconductor chip mounted on the support, and a X Ｃ / X Ｓ or a step of supplying an epoxy resin composition to a mold under conditions such that X≦0.

3. Ｃ / X Ｓ A method for manufacturing a semiconductor device, comprising the steps of: supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.3; mounting a laminate having a support and a semiconductor chip mounted on the support in the mold; filling the laminate with the epoxy resin composition to form a molded body; and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body. Ｃ X: the radius of a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the maximum projected area on the support Ｓ : Radius of support when viewed in plan 19. A laminate including a support and a semiconductor chip mounted on the support, Ｒ / Y Ｆ or supplying the epoxy resin composition to a mold under conditions such that Y Ｒ / Y Ｆ A method for manufacturing a semiconductor device, comprising the steps of: supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.8, and then mounting a laminate having a support and a semiconductor chip mounted on the support in the mold; filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body. Ｆ Y: Projected area of ​​the supplied epoxy resin composition on the support Ｒ : Projected area of ​​the supplied epoxy resin composition on the support, existing within a range of 30% of the radius of the support from the center point of the support 20. The method for manufacturing a semiconductor device according to claim 18 or 19, wherein the amount of warpage of the sealing body at 25° C., as measured by a shadow moire device, is 4000 μm or less.

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