Light-emitting device and light-emitting module comprising same

Abstract

According to an embodiment of the present invention, a light-emitting device comprises a semiconductor layer, an insulating layer, a first electrode and a second electrode. The semiconductor layer includes: a first window layer doped with a first dopant; a second window layer doped with a second dopant; and an active layer arranged between the first window layer and the second window layer. In addition, the insulating layer covers the semiconductor layer and includes an opening exposing a region of the first window layer and / or the second window layer. The first electrode is electrically connected to the first window layer, and the second electrode is electrically connected to the second window layer. Here, the first window layer protrudes in the direction in which the first electrode is arranged, and includes an electrode arrangement region in which the first electrode is arranged. Additionally, the angle formed between the top surface and the side surfaces in at least one region of the electrode arrangement region is an acute angle.

Description

Light-emitting element and light-emitting module including same

[0001] The present invention relates to a light-emitting element and a light-emitting module including the same.

[0002] A light emitting diode (LED) is a type of light emitting device that emits light when current is applied. The LED is formed by growing epitaxial layers on a substrate, and includes an N-type semiconductor layer, a P-type semiconductor layer, and an active layer interposed therebetween. An N-electrode pad is formed on the N-type semiconductor layer, and a P-electrode pad is formed on the P-type semiconductor layer, so that the LED is driven by being electrically connected to an external power source through the electrode pads. At this time, current flows from the P-electrode pad through the semiconductor layers to the N-electrode pad.

[0003] Meanwhile, flip-chip structured light-emitting diodes are being used to prevent light loss due to P-electrode pads and to improve heat dissipation efficiency, and various electrode structures are being proposed to help current distribution in large-area flip-chip structured light-emitting diodes. For example, a reflective electrode is formed on a P-type semiconductor layer, and extensions for current distribution are formed on the N-type semiconductor layer exposed by etching the P-type semiconductor layer and the active layer.

[0004] A display device using light emitting diodes can be obtained by forming structures of individually grown red (R), green (G) and blue (B) light emitting diodes (LEDs) on a final substrate.

[0005] The problem to be solved by the present invention is to provide a light-emitting device capable of improving light extraction efficiency.

[0006] The problem to be solved by the present invention is to provide a light-emitting element capable of concentrating light emitted from the light-emitting element in an upward direction of the light-emitting element.

[0007] The problem to be solved by the present invention is to provide a light-emitting element in which current is evenly distributed on one surface of the light-emitting element.

[0008] The problem to be solved by the present invention is to provide a light-emitting element capable of preventing electrode peeling.

[0009] The problem to be solved by the present invention is to provide a light-emitting element capable of securing the maximum electrode arrangement area.

[0010] According to one embodiment of the present invention, a light emitting device is provided, which includes a semiconductor layer, an insulating layer, a first electrode, and a second electrode. The active layer may include a first window layer doped with a first dopant, a second window layer doped with a second dopant, and an active layer disposed between the first window layer and the second window layer. The insulating layer may cover the semiconductor layer and include an opening exposing a portion of at least one window layer of the first window layer or the second window layer. The first electrode may be electrically connected to the first window layer. In addition, the second electrode may be electrically connected to the second window layer. Here, the first window layer may protrude in a direction in which the first electrode is disposed, and may include an electrode arrangement region in which the first electrode is disposed. In addition, at least one region of the electrode arrangement region may have an acute angle formed between a top surface and a side surface.

[0011] The semiconductor layer may include a mesa. Here, the mesa may have a structure in which the width or cross-sectional area decreases upward and then increases again.

[0012] The upper surface of the semiconductor layer may have a smaller cross-sectional area or width than the lower surface of the semiconductor layer. In addition, the semiconductor layer may include a protruding region in which a portion of the upper surface of the semiconductor layer protrudes further outward than the side surface of the mesa.

[0013] At least one of the above electrode placement regions may have an upper region having a width greater than a lower region.

[0014] The inclination direction of at least one side of the electrode arrangement area may be the same as the inclination direction of one inner side of the insulating layer. In addition, one inner side of the insulating layer may be an area adjacent to one inner side of the electrode arrangement area among the inner sides of the insulating layer forming the opening on the electrode arrangement area.

[0015] The light-emitting element may further include a first ohmic electrode formed between the first electrode and the first window layer.

[0016] The first ohmic electrode may include a first region and a second region having different coefficients of thermal expansion. Here, the coefficient of thermal expansion of the first region may be between the coefficient of thermal expansion of the first electrode and the coefficient of thermal expansion of the second region.

[0017] The light emitting element may further include a side projection formed on a side surface between the upper surface of the first window layer and the lower surface of the second window layer.

[0018] According to another embodiment of the present invention, a light emitting device is provided, which includes a semiconductor layer, an insulating layer, a first electrode, and a second electrode. The semiconductor layer may include a first window layer doped with a first dopant, a second window layer doped with a second dopant, and an active layer disposed between the first window layer and the second window layer. The insulating layer may cover the semiconductor layer and include an opening exposing a portion of at least one window layer of the first window layer or the second window layer. The first electrode may be electrically connected to the first window layer. In addition, the second electrode may be electrically connected to the second window layer. Here, a side surface of the active layer may be located inward from an outermost side surface of the first window layer.

[0019] The semiconductor layer may include a mesa whose upper surface has a smaller cross-sectional area or width than the lower surface of the semiconductor layer. The mesa may have a width or cross-sectional area that decreases upward and then increases again.

[0020] The first window layer may include an electrode placement area in which the first electrode is placed. Here, the electrode placement area may protrude further in the direction in which the first electrode is placed than other areas of the first window layer.

[0021] At least one region of the above electrode arrangement area may have a width of the upper region greater than a width of the lower region.

[0022] At least one area of ​​the above electrode arrangement region may have at least one angle formed by the upper surface and the side surface as an acute angle.

[0023] The light emitting element may further include a first ohmic electrode formed between the first electrode and the first window layer, the first electrode including a first region and a second region having different thermal expansion coefficients. Here, the thermal expansion coefficient of the first region may be between the thermal expansion coefficient of the first electrode and the thermal expansion coefficient of the second region.

[0024] The light emitting element may further include a side projection formed on a side surface between the upper surface of the first window layer and the lower surface of the second window layer.

[0025] According to another embodiment of the present invention, a light emitting device is provided, which includes a semiconductor layer, an insulating layer, a first electrode, and a second electrode. The semiconductor layer may include a first window layer doped with a first dopant, a second window layer doped with a second dopant, and an active layer disposed between the first window layer and the second window layer. The insulating layer may cover the semiconductor layer and include an opening exposing a portion of at least one window layer of the first window layer or the second window layer. The first electrode may be electrically connected to the first window layer. In addition, the second electrode may be electrically connected to the second window layer. Here, the semiconductor layer may include a side surface protrusion formed on a side surface between an upper surface of the first window layer and a lower surface of the second window layer.

[0026] The above side protrusions can be formed on the side of the active layer.

[0027] The semiconductor layer may include a mesa having a structure in which the width or cross-sectional area decreases and then increases as it goes upward. In this case, the upper surface of the semiconductor layer has a smaller cross-sectional area or width than the lower surface of the semiconductor layer, and the semiconductor layer may include a protruding region in which a portion of the upper surface of the semiconductor layer protrudes further outward than the side surface of the mesa.

[0028] The first window layer may protrude in the direction in which the first electrode is arranged and may include an electrode arrangement region in which the first electrode is arranged. Here, at least one region of the electrode arrangement region may have a width of an upper region greater than a width of a lower region.

[0029] The light-emitting element may further include a first ohmic electrode formed between the first electrode and the first window layer, the first electrode including a first region and a second region having different thermal expansion coefficients. In this case, the thermal expansion coefficient of the first region may be between the thermal expansion coefficient of the first electrode and the thermal expansion coefficient of the second region.

[0030] According to the present invention, texturing is possible on the lower surface of the first window layer, and thus there is an advantage in that the light efficiency of the light-emitting element can be increased by texturing.

[0031] A light-emitting device according to an embodiment of the present invention can improve light extraction efficiency by forming unevenness in at least a portion of the upper surface of a semiconductor layer.

[0032] A light-emitting device according to an embodiment of the present invention can improve light extraction efficiency by forming unevenness in at least a portion of a side surface of a semiconductor layer.

[0033] In a light-emitting device according to an embodiment of the present invention, a portion of a first window layer is formed so that light traveling downward from the first window layer can be reflected from the second window layer or an insulating layer covering the second window layer and directed upward from the light-emitting device, thereby improving light extraction efficiency.

[0034] According to an embodiment of the present invention, the light emitting element can increase the electrode arrangement area by including an electrode arrangement area in which an upper region has a larger width or cross-sectional area than a lower region.

[0035] According to an embodiment of the present invention, a light-emitting element includes an ohmic electrode including one region and another region, and a thermal expansion coefficient of one region is between a thermal expansion coefficient of the electrode and a thermal expansion coefficient of the other region, thereby preventing electrode peeling.

[0036] Figure 1 is a schematic cross-sectional view of a light-emitting device according to a first embodiment of the present invention.

[0037] Figure 2 is a component profile of a semiconductor layer of a light-emitting device according to the first embodiment.

[0038] Figure 3 is a component profile of the active layer of the light-emitting device according to the first embodiment.

[0039] Figure 4 is a schematic cross-sectional view of a light-emitting element according to a second embodiment of the present invention.

[0040] Figure 5 is a schematic cross-sectional view of a light-emitting element according to a third embodiment of the present invention.

[0041] Figure 6 is a schematic cross-sectional view of a light-emitting element according to a fourth embodiment of the present invention.

[0042] Fig. 7 is an enlarged view of one area (B) of the light-emitting element of Fig. 6.

[0043] Figure 8 is a schematic cross-sectional view of a light-emitting element according to a fifth embodiment of the present invention.

[0044] Figure 9 is a schematic cross-sectional view of a light-emitting element according to a sixth embodiment of the present invention.

[0045] Fig. 10 is a top view of a light-emitting element for explaining a first embodiment of the first electrode pattern of the present invention.

[0046] Fig. 11 is a top view of a light-emitting element for explaining a second embodiment of the first electrode pattern of the present invention.

[0047] Fig. 12 is a top view of a light-emitting element for explaining a third embodiment of the first electrode pattern of the present invention.

[0048] FIG. 13 is a drawing for explaining a light-emitting device to which a light-emitting element according to an embodiment of the present invention is applied.

[0049] The present invention is susceptible to various modifications and takes various forms. Specific embodiments are illustrated in the drawings and described in detail herein. However, this is not intended to limit the present invention to specific disclosed forms, but rather to encompass all modifications, equivalents, and alternatives falling within the spirit and technical scope of the present invention.

[0050] And in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. In addition, when one component is described as being "on" or "over" another component, it includes not only the cases where each part is "directly on" or "directly over" the other part, but also the cases where there is another component between each component and the other component. Expressions such as "below," "above," "left," or "right" are expressions used relatively with reference to the drawings for the purpose of explanation, and are not intended to limit the present invention thereby. The light-emitting element of the present invention may be mounted upside down from that shown in the drawings.

[0051] Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the attached drawings.

[0052] FIGS. 1 to 5 are drawings for explaining various embodiments of a light-emitting device of the present invention. FIG. 1 is a schematic cross-sectional view of a light-emitting device according to a first embodiment of the present invention. FIG. 2 is a composition graph of a semiconductor layer of a light-emitting device according to the first embodiment. FIG. 3 is a composition graph of an active layer of a light-emitting device according to the first embodiment. FIG. 4 is a schematic cross-sectional view of a light-emitting device according to a second embodiment of the present invention. In addition, FIG. 5 is a schematic cross-sectional view of a light-emitting device according to a third embodiment of the present invention.

[0053] Referring to FIGS. 1 to 5, light-emitting elements (100, 200, 300) according to an embodiment of the present invention include a first light-transmitting layer (20), a first window layer (31) disposed on the first light-transmitting layer (20), an active layer (60) disposed on the first window layer (31), a second window layer (32) disposed on the active layer (60), a second ohmic electrode (82) disposed on the second window layer (32), and a first ohmic electrode (81) disposed on the first window layer (31).

[0054] In addition, the light emitting elements (100, 200, 300) according to the embodiment of the present invention may further include one or more of a second light emitting layer (25) disposed between the first light emitting layer (20) and the first window layer (31), a first cladding layer (41) and a first electron control layer (51) disposed between the first window layer (31) and the active layer (60), a first hole control layer (52) and a second cladding layer (42) disposed between the active layer (60) and the second window layer (32), a contact layer (72) disposed between the second window layer (32) and the second ohmic electrode (82), an insulating layer (90) covering an exposed surface of the light emitting element, a first electrode (101) disposed on the first ohmic electrode (81), and a second electrode (102) disposed on the second ohmic electrode (82).

[0055] The planar shape of the first window layer (31) may correspond to the planar shape of the first light-transmitting layer (20), and each corner may be formed to be rounded. In addition, the planar area of ​​the first window layer (31) may be smaller than the planar area of ​​the first light-transmitting layer (20). According to the present embodiment, by forming the corners of the first window layer (31) to be rounded, current can be prevented from being concentrated at the corners.

[0056] The planar shape of the mesa (M) may be a shape corresponding to the planar shape of the first window layer (31), in which at least a portion of one side or one corner is sunken, and each corner may be formed to have a rounded shape so as to have a curvature. Such a planar shape of the mesa (M) can effectively disperse light concentrated on the corners, thereby increasing the side light emission efficiency of the light emitting element (100, 200, 300). In addition, the planar area of ​​the mesa (M) may be smaller than the planar area of ​​the first window layer (31). The mesa (M) may include a light emitting region that substantially contributes to light emission.

[0057] The planar shape of the second ohmic electrode (82) may have one edge sunken inward to correspond to the planar shape of the mesa (M), and each edge may be formed to be rounded in at least a portion of the area. The planar area of ​​the second ohmic electrode (82) may be smaller than the planar area of ​​the mesa (M). The second ohmic electrode (82) may be arranged in an inner area of ​​the outer edge of the mesa (M). Therefore, the distance between the second ohmic electrode (82) and the first window layer (31) is increased, so that the conductive material constituting the second ohmic electrode (82) can be prevented from moving to the first window layer (31) and causing a short circuit.

[0058] The second ohmic electrode (82) may be formed of at least one material among light-reflective materials or may be formed of at least one material among light-transmitting materials. The light-reflective material may be a material having reflective properties for at least some light, such as Ge, Al, Cu, Ag, Au, Ni, Cr, Ti, Pt, Rd, Ru, W, Mo, TiW, etc. The light-transmitting material may be a material having transmittive properties for at least some light, such as ITO, ZnO, etc.

[0059] The first ohmic electrode (81) may be placed on the first window layer (31) so as to be at least partially surrounded by the sunken portion in the planar shape of the mesa (M) and the second ohmic electrode (82). The planar shape of the first ohmic electrode (81) may be a circle, an ellipse, or a square, but is not limited thereto.

[0060] The planar shape of the insulating layer (90) may correspond to the planar shape of the first light-transmitting layer (20), and each corner may be formed to be rounded. Alternatively, the insulating layer (90) may cover all of the corners of the first light-transmitting layer (20). In addition, the horizontal distance from one end of the insulating layer (90) to the other end may be the same as the distance from one end of the first light-transmitting layer (20) to the other end. In addition, the planar area of ​​the insulating layer (90) may correspond to the planar area of ​​the first light-transmitting layer (20). Alternatively, the insulating layer (90) may cover all of the side surfaces connected to the corners of the first light-transmitting layer (20). In this case, light extraction can be effectively performed at the side surfaces and near the side surfaces of the first light-transmitting layer (20) due to the change in refractive index at the interface where the first light-transmitting layer (20) and the insulating layer (90) come into contact.

[0061] An opening (95) may be formed in the insulating layer (90). A single opening (95) may be formed in the insulating layer (90), or a plurality of openings (95) may be formed. At this time, the plurality of openings (95) may have the same shape, or at least one opening (95) may have a different shape from the other openings (95). For example, four openings (95) may be formed in each quadrant of the insulating layer (90). The first and second ohmic electrodes (81, 82) and the first and second electrodes (101, 102) may be electrically connected, respectively, through the openings (95) formed in the insulating layer (90).

[0062] The insulating layer (90) may be a light-transmitting material or a material having oxide film properties. For example, the insulating layer (90) may be SiO2, TiO2, AlO X or NiOX It can be composed of materials such as:

[0063] The light-emitting elements (100, 200, 300) may include a plurality of electrodes (101, 102). Specifically, the light-emitting elements (100, 200, 300) may include a first electrode (101) connected to a first ohmic electrode (81) and a second electrode (102) connected to a second ohmic electrode (82).

[0064] The planar shape of the first electrode (101) may have one corner having a smaller curvature than the other corners, and the planar shape of the second electrode (102) may be a square or a rectangle, but is not limited thereto. In addition, the planar shapes of the first electrode (101) and the second electrode (102) may have each corner formed to be rounded. The electrodes may expand or the expanded electrodes may contract due to heat generation and heat dissipation caused by the operation of the light-emitting element. As a result, the electrodes may peel off from the corners. However, the light-emitting element (100, 200, 300) of the present embodiment forms the corners of the electrodes (101, 102) to be rounded, thereby alleviating the thermal stress concentrated on the corners due to heat generation and heat dissipation, thereby preventing the electrodes (101, 102) from peeling off.

[0065] FIGS. 2 and 3 are graphs showing the composition of each layer when the light-emitting device (100) according to the first embodiment of FIG. 1 of the present invention includes a first window layer (31), a first cladding layer (41), a first electron control layer (51), an active layer (60), a first hole control layer (52), a second cladding layer (42), a second window layer (32), and a contact layer (72). The sections A to H shown in FIG. 2 are roughly shown for explanation purposes, and the boundaries of each layer are not clearly expressed.

[0066] In FIG. 2, section A (the part indicating the peak (Paek) in the graph in black (Mg) and yellow (H)) corresponds to the contact layer (72), section B corresponds to the second window layer (32), section C corresponds to the second cladding layer (42), section D corresponds to the first hole control layer (52), section E corresponds to the active layer (60), section F corresponds to the first electron control layer (51), section G corresponds to the first cladding layer (41), and section H corresponds to the first window layer (31).

[0067] Hereinafter, the light emitting device of the present invention will be described in detail.

[0068] The first light-transmitting layer (20) transmits light emitted from the active layer (60) and may be formed of an insulating material having light transmittance. Here, “light transmittance” includes not only a transparent case where all light is transmitted, but also a semi-transparent or partially transparent case where only a portion of light of a predetermined wavelength or light of a short wavelength is transmitted. The same applies hereinafter.

[0069] The first light-transmitting layer (20) may be a substrate, and may be, for example, any one of a sapphire substrate, a silicon substrate, and a gallium nitride substrate.

[0070] The first window layer (31) serves to generate and supply electrons. The dopant used when forming the first window layer (31) is an n-type dopant, and may be, for example, Si or Te.

[0071] The first window layer (31) of the light-emitting device (100) according to the first embodiment of the present invention in FIG. 1 is characterized by including a first doped layer. The first doped layer is a layer to which a higher doping level is applied compared to other regions of the first window layer (31), and is a layer that is exposed in the process of etching the mesa (M) and is in electrical contact with the first ohmic electrode (81). Hereinafter, a region of the first window layer (31) having a lower doping level than the first doped layer is referred to as a 'second doped layer'. The H1 section of FIG. 2 corresponds to the first doped layer, and the H2 section corresponds to the second doped layer.

[0072] The thickness of the first window layer (31) may be 50% or more of the total thickness of the semiconductor layer of the light-emitting element (100). In addition, the thickness of the first window layer (31) may be 80% or more of the thickness of the region below the active layer (60) (for example, the region including the first electron control layer (51), the first cladding layer (41), the first window layer (31), the second light-transmitting layer (25), and the first light-transmitting layer (20) in FIG. 1. The same applies hereinafter.). Accordingly, a region in which electrons can diffuse is sufficiently secured at the lower portion of the active layer (60), thereby improving the light emission uniformity of the light-emitting element. For example, the total thickness of the light-emitting element (100) may be 4500 nm to 7600 nm, and preferably 6500 nm to 7600 nm. The thickness of the portion below the active layer (60) may be 3000 nm to 5200 nm, and the thickness of the first window layer (31) may be 3000 nm to 5000 nm.

[0073] After forming the first doping layer (H1) on the first window layer (31), when the first doping layer (H1) and the first ohmic electrode (81) are brought into contact, an ohmic contact can be formed well between the first window layer (31) and the first ohmic electrode (81). In addition, in order to electrically bond the first window layer (31) and the first ohmic electrode (81), a mesa can be formed in a direction from the second window layer (31) toward the first window layer (31) to expose the first window layer (31). Accordingly, the first ohmic electrode (81) and the second ohmic electrode (82) can be arranged to face the same direction, so that the light-emitting element (100) can be electrically connected to the circuit more easily.

[0074] If the thickness of the first doping layer (H1) is too thick or the doping level is too high, the supply of electrons increases, resulting in increased electron leakage. If the thickness of the first doping layer (H1) is too thin or the doping level is too low, ohmic contact with the first ohmic electrode (81) is not properly formed. Therefore, the inventor optimized the doping level and thickness of the first doping layer (H1) through numerous experiments.

[0075] The thickness of the first doping layer (H1) may be approximately 3% to 30% of the thickness of the first window layer (31), approximately 5% to 30% of the thickness of the region under the active layer (60), and approximately 30% to 30% of the total thickness of the light-emitting device (100), preferably approximately 6% to 20% of the thickness of the entire light-emitting device (100). For example, when the total thickness of the light-emitting device (100) is 7600 nm, the thickness of the region under the active layer (60) is 5200 nm, and the thickness of the first window layer (31) is 4500 nm, the thickness of the first doping layer (H1) may be 300 nm to 900 nm, preferably 400 nm to 600 nm.

[0076] In addition, the doping level of the first doping layer (H1) may be 10 times or less than the doping level of the second doping layer (H2), and preferably 5 times or more to 10 times or less. For example, the average doping level of the second doping layer (H2) is approximately 1e17 to 3e18 (using the exponential notation below.) Atoms / cm 3 , and the doping level of the first doping layer (H1) is 4e18 Atoms / cm 3 This may be ideal. Through this doping concentration relationship, the light-emitting device (100) can maintain stable electrical characteristics. However, the light-emitting device (100) does not necessarily require the second doping layer (H2). In addition, the light-emitting device (100) may have a thick first doping layer (H1).

[0077] The first doped layer (H1) may have a profile in which the dopant concentration varies, and may also have a profile in which hydrogen varies. In this case, the deviation in the profile in which hydrogen varies may be greater than the deviation in the profile in which dopant varies within the same section. Therefore, during the process of current injection and dopant transport, the large difference in hydrogen concentration accelerates dopant pumping, thereby facilitating electron injection.

[0078] The first window layer (31) of the light-emitting element according to the first embodiment of the present invention may further include a third doping layer (H3) having a higher doping level than the second doping layer (H2) on the lower surface (in the opposite direction of the first doping layer (H1). The same applies hereinafter).

[0079] By increasing the doping level of the third doping layer (H3), the texturing of the first window layer (31) can be improved. In addition, by increasing the doping level of the third doping layer (H3), when the growth substrate is removed and the first light-transmitting layer (20) is bonded, the interface bonding between the semiconductor layer and the first light-transmitting layer (20) can be effectively achieved due to impurities. Additionally, the interface bonding can be effectively achieved even when a bonding material is disposed between the semiconductor layer and the first light-transmitting layer (20). The third doping layer (H3) may be omitted from the first window layer (31) or may be removed after being formed.

[0080] The present invention includes both an embodiment in which the lower surface of the first window layer (31) undergoes a texturing process and does not include a third doping layer (H3) in the final stage, and an embodiment in which the first window layer (31) does not undergo a texturing process and includes a third doping layer (H3) in the final stage.

[0081] The doping level of the third doped layer (H3) may be similar to or slightly lower than that of the first doped layer (H1). The H3 section in Fig. 2 corresponds to the third doped layer (H3).

[0082] In the unit thickness range, the degree of change in the profile of the dopant of the second doping layer (H2) may be greater than the degree of change in the profile of the dopant of the first doping layer (H1). Here, the unit thickness may be 200 nm, and the depth at which the unit thickness of the first doping layer (H1) is located is located closer to the active layer (60) than the depth at which the unit thickness of the second doping layer (H2) is located. Therefore, the occurrence of defects in the semiconductor layer due to changes in the dopant content can be reduced, thereby preventing the defects from spreading to the active layer (60).

[0083] The active layer (60) may be a multiple quantum well (MQW) layer formed by alternating a quantum well (QW) layer and a quantum barrier (QB) layer several times, and electrons and holes meet in the quantum well layer to emit light. The thickness of the active layer (60) may be 550 nm to 650 nm.

[0084] The quantum well layer and the quantum barrier layer can be formed of layers having different energy band gaps. The well layer is formed of a layer having a composition of either AlInGaP or InGaP, and can be a layer in the range of 3 to 7 nm. The barrier layer is In x Ga y Al z It can be formed with P. In the relationship between y and z, y+z can have a value corresponding to x*0.8 ≤y+z ≤ x*1.2. Or it can be x+y+z=1. Or it can be x+y+z=1. Also, z can have a composition of 0.15≤z≤0.4. Additionally, after growing an InGaP layer as a quantum well layer, InAlGaP with an Al content of approximately 40% is grown as a capping layer, and then a main InAlGaP layer with an Al content of approximately 50% or more and approximately 90% or less is grown to form a quantum barrier layer.

[0085] The quantum well layer can be designed to have a thickness of preferably about 5 nm, and the quantum barrier layer can be designed to have a thickness of preferably about 15 nm or less. In addition, when the thickness of the active layer (60) is 550 nm to 650 nm, the number of pairs of quantum well layers / quantum barrier layers can be 10 or more, preferably about 20 to 40, and more preferably about 40.

[0086] Referring to FIG. 3, at least one layer of the active layer (60) may have different amounts of aluminum and gallium than other layers. The difference in composition between aluminum and gallium (the second difference in composition, D2) in at least one quantum well layer may be greater than the difference in composition between aluminum and gallium (the first difference in composition, D1) in at least one quantum barrier layer. The second difference in composition (D2) may be at least 10 times the first difference in composition (D1). Therefore, the active layer (60) can effectively confine electrons and holes to improve luminous efficiency.

[0087] The second window layer (32) plays a role in forming and supplying holes. In addition, the second window layer (32) may be a GaP layer. The dopant used when forming the second window layer (32) is a P-type dopant, and for example, Mg or C may be used, or both Mg and C may be used. The average doping level is approximately 1e18 Atoms / cm 3 It can be internal or external. The thickness of the second window layer (32) can be 500 nm to 10,000 nm, and preferably can be about 1,000 nm.

[0088] The second ohmic electrode (82) is electrically connected to the second window layer (32) to form an ohmic contact, and may be made of a metal material. The second ohmic electrode (82) may be in direct contact with the second window layer (32) to form an ohmic contact. In addition, a contact layer (72) may be formed on the upper surface of the second window layer (32), and the contact layer (72) and the second ohmic electrode (82) may be in contact to form an ohmic contact. The second ohmic electrode (82) may be formed of at least one material among materials having light reflectivity or may be formed of at least one material among materials having light transparency. The light reflective material may be a material having a reflective property for at least a portion of light, such as Ge, Al, Cu, Ag, Au, Ni, Cr, Ti, Pt, Rd, Ru, W, Mo, TiW, etc. The light transparent material may be a material having a transmittable property for at least a portion of light, such as ITO, ZnO, etc.

[0089] The contact layer (72) may be placed between the second ohmic electrode (82) and the second window layer (32) so as to make an ohmic contact with the second ohmic electrode (82), and may have a higher doping level than the second window layer (32). For example, the average doping level of the second window layer (32) may be approximately 1e18 Atoms / cm. 3 In the case of internal and external, the average doping level of the contact layer (72) is approximately 1e19 Atoms / cm 3 It may be ideal. The contact layer (72) may be a GaP layer.

[0090] Since the contact layer (72) has a high doping concentration, defects may exist inside due to the dopant, and if the thickness increases, light absorption may occur due to these defects, which may reduce the light efficiency of the light-emitting element (100). Therefore, the thickness of the contact layer (72) is preferably less than 100 nm.

[0091] The first ohmic electrode (81) is electrically connected to the first window layer (31) to form an ohmic contact, and may be made of a metal material. The first ohmic electrode (81) may be in contact with the doped layer of the first window layer (31) to form an ohmic contact. The first ohmic electrode (81) may be formed of at least one material among light-reflective materials, or may be formed of at least one material among light-transmitting materials. The light-reflective material may be a material having a reflective property for at least some light, such as Ge, Al, Cu, Ag, Au, Ni, Cr, Ti, Pt, Rd, Ru, W, Mo, TiW, etc. The light-transmitting material may be a material having a transmittive property for at least some light, such as ITO, ZnO, etc.

[0092] The second light-transmitting layer (25) is formed between the first light-transmitting layer (20) and the first window layer (31) to transmit light emitted from the active layer (60), and may be formed of a light-transmitting insulating material. The second light-transmitting layer (25) may function as a bonding layer that connects the first window layer (31) and the first light-transmitting layer (20). The second light-transmitting layer (25) may be formed of any material that has light-transmitting properties, such as silicon, polyimide, polypropylene, benzocyclobutene (BCB) silicon dioxide, etc. The second light-transmitting layer (25) may have a refractive index different from the refractive indices of the first window layer (31) and the first light-transmitting layer (20). Due to the interface having a different refractive index, light refraction occurs effectively, so that light extraction of the light-emitting element (100) may be improved.

[0093] The first cladding layer (41) is formed between the first window layer (31) and the active layer (60) and acts as a barrier layer to prevent holes from passing into the first window layer (31), and for this purpose, has a relatively high energy band gap.

[0094] The dopant used when forming the first cladding layer (41) may be a dopant of a different group from that of the first window layer (31), and may have a larger atomic size than the dopant of the first window layer (31).

[0095] The dopant of the first cladding layer (41) is an n-type dopant, and may be, for example, Si, B, P, As, Sb, or Te. Since Te has a larger atomic size than Si, when Te is used as a dopant of the first cladding layer (41), a higher breakdown voltage (VR) and superior luminous properties can be obtained compared to when Si is used as a dopant, and there is an advantage in that an n-type layer can be formed more reliably even with a small concentration.

[0096] The dopant concentration of the first cladding layer (41) may be lower than the dopant concentration of the first doped layer. When the first window layer (31) includes the second doped layer, the dopant concentration of the first cladding layer (41) may be between the dopant concentration of the first doped layer and the dopant concentration of the second doped layer. Additionally, the difference (D3) between the dopant concentration of the first cladding layer (41) and the dopant concentration of the first doped layer may be greater than the difference (D4) between the dopant concentration of the first cladding layer (41) and the dopant concentration of the second doped layer. However, it is not necessarily limited thereto, and the dopant of the first cladding layer (41) and the dopant of the first window layer (31) may be of the same type in order to include the same dopant size.

[0097] The first cladding layer (41) is n-In x Al (1-x) It may be a P layer, where x may have a composition of 0.4≤x≤0.6. The first cladding layer (41) has a thickness of about 300 nm to 450 nm, and the average doping level of the dopant is about 5e17 to 1e18 Atoms / cm. 3 It could be.

[0098] The first electron control layer (51) may be formed between the first window layer (31) and the active layer (60) to slow down the speed at which electrons reach the active layer (60). When the light-emitting device (100) of the present embodiment includes both the first cladding layer (41) and the first electron control layer (51), the first electron control layer (51) may be formed on top of the first cladding layer (41) (i.e., close to the active layer (60)). The speed at which electrons reach the active layer (60) may be controlled by controlling the thickness of the first electron control layer (51).

[0099] The first electronic control layer (51) is In x Ga y Al z It can be a P layer. In the relationship between y and z, y+z can have a value corresponding to x*0.8≤y+z≤x*1.2. Or, x+y+z=1. In addition, z can have a composition of 0.15≤z≤0.4. This Al composition can improve light extraction by preventing light generated in the active layer (60) from being absorbed in the first electron control layer (51). The first electron control layer (51) can have a relatively lower doping concentration than the first cladding layer (41) and may not include a doping material.

[0100] Meanwhile, the first electron control layer (51) may be formed of the same element as the first window layer (31), or may be formed of a composition that does not contain one of the constituent elements of the first window layer (31).

[0101] For example, the first window layer (31) may have a composition in which four elements are combined, three of the four elements may be elements of Group 3 (B, Al, Ga, In, Tl, Nh, hereinafter the same), and the remaining one may be an element having a standard atomic weight of 30 or more. The first cladding layer (41) may have a composition in which three elements are combined, two of the three elements may be elements of Group 3, and the remaining one may be an element having a standard atomic weight of 30 or more.

[0102] In addition, the two Group 3 elements of the first cladding layer (41) may be the elements with the largest atomic weight and the smallest atomic weight among the three Group 3 elements of the first window layer (31). In addition, the element having a standard atomic weight of 30 or more of the first cladding layer (41) may be the same as the element having a standard atomic weight of 30 or more of the first window layer (31).

[0103] For example, the first window layer (31) and the first electronic control layer (51) are In x Ga y Al z It can be a P layer, and the first cladding layer (41) is n-In x Al (1-x) It could be the P floor.

[0104] The difference in the content of aluminum and indium included in the first electron control layer (51) may be greater than the difference in the content of aluminum and indium included in the barrier layer of the active layer (60). In addition, the difference in the content of aluminum and indium included in the first electron control layer (51) may be less than the difference in the content of aluminum and indium included in the well layer of the active layer (60).

[0105] The first hole control layer (52) may be formed between the active layer (60) and the second window layer (32) to slow down the speed at which holes reach the active layer (60). The speed at which holes reach the active layer (60) may be controlled by adjusting the thickness of the first hole control layer (52).

[0106] The first hole control layer (52) may include the same group 3 and group 5 elements as the first electron control layer (51), and In x Ga y Al zIt may be a P layer. In the relationship between y and z, y+z may have a value corresponding to x*0.8≤y+z≤x*1.2. Or, x+y+z=1. In addition, z may have a composition of 0.15≤z≤0.4. The first hole control layer (52) may have a lower doping concentration than the second cladding layer (42), or may not include a doping material.

[0107] The difference in the contents of aluminum and indium included in the first hole control layer (51) may be greater than the difference in the contents of aluminum and indium included in the barrier layer of the active layer (60). In addition, the difference in the contents of aluminum and indium included in the first hole control layer (51) may be less than the difference in the contents of aluminum and indium included in the well layer of the active layer (60).

[0108] The second cladding layer (42) is formed between the active layer (60) and the second window layer (32) and acts as a barrier layer to prevent electrons from passing into the second window layer (32), and has a relatively high energy band gap for this purpose.

[0109] The thickness of the second cladding layer (42) may be 500 nm or less, and preferably may be approximately 300 nm to 500 nm.

[0110] The average doping level of the second cladding layer (42) is approximately 8e17 to 1e18 Atoms / cm 3 It can be. The dopant used when forming the second cladding layer (42) is a p-type dopant, and for example, Mg or C or both can be used. In addition, the second cladding layer (42) can be p-In x Al (1-x)It can be a P layer, where x can have a composition of 0.4≤x≤0.6. The second cladding layer (42) can be formed of two Group III elements and can have a higher band gap energy than the layers disposed below and above the second cladding layer (42). Alternatively, the second cladding layer (42) can have the highest band gap energy among the semiconductor layers constituting the light emitting element. Therefore, the second cladding layer (42) can prevent electrons from passing to the second window layer (32).

[0111] When the light emitting element (100) includes both the first hole control layer (52) and the second cladding layer (42), the first hole control layer (52) is formed under the second cladding layer (42) (i.e., close to the active layer (60)). In addition, in order to protect the active layer (60) from interdiffusion occurring during the doping process of the second cladding layer (42), the first hole control layer (52) is preferably formed thicker than the first electron control layer (51). For example, when the thickness of the first electron control layer (51) is approximately 150 to 350 nm, the thickness of the first hole control layer (52) may be approximately 300 to 500 nm. Alternatively, the thickness of the first hole control layer (52) may be 1 to 2 times the thickness of the first electron control layer (51). Therefore, the thickness of the first hole control layer (52) and the first electron control layer (51) can be adjusted to balance the movement speeds of electrons and holes.

[0112] The light emitting element (100) may further include a light guide layer formed between the second window layer (32) and the active layer (60) and between the active layer (60) and the first window layer (32).

[0113] When the light emitting element (100) includes a second cladding layer (42), a first hole control layer (52), a first electron control layer (51), and a first cladding layer (41), the light guide layer may be formed between the second window layer (32) and the second cladding layer (42) and between the first cladding layer (41) and the first window layer (31).

[0114] The light guide layer can play a role in increasing the light efficiency of the light emitting element (100) by increasing the reflectance of light emitted from the active layer (60). The light guide layer is In a Al (1-a) P layer or In x Ga y Al z It can be a P layer. Here, a can have a composition range of 0.4≤a≤0.6, and in the relationship between y and z, y+z can have a value corresponding to x*0.8≤y+z≤x*1.2. Or, x+y+z=1. In addition, z can have a composition of 0.15≤z≤0.4. The light guide layer can be a form in which layers with different band gaps are stacked, or a form in which pairs composed of multiple layers with different band gaps are repeatedly stacked. n-In a Al (1-a) The P layer can be formed to have a refractive index of 2.9 to 3.0, and In x Ga y Al z The P layer can be formed to have a refractive index of 3.05 to 3.2. The light guide layer can guide light generated from the active layer in a desired direction by arranging multiple layers with a refractive index difference of 0.05 to 0.3 within the semiconductor layer. The light extraction efficiency of the light emitting element (100) can be improved by such a light guide layer.

[0115] The light guide layer disposed between the active layer (60) and the first window layer (31) can improve the light extraction of the light emitting element (100) by changing the path of light generated in the active layer (60) and directed toward the first window layer (31) in the direction of directed toward the second window layer (32). At this time, the light guide layer may have a structure in which one layer is n-type doped and includes two layers having different doping concentrations. Alternatively, the light guide layer may have a structure in which two layers are n-type doped and have different doping concentrations. Alternatively, the light guide layer may have a structure in which two layers are n-type doped and have the same doping concentration. By including an n-type doped layer, the light guide layer can guide light while facilitating the movement of electrons.

[0116] The light guide layer disposed between the active layer (60) and the second window layer (32) can improve the light extraction of the light emitting element (100) by changing the path of light generated in the active layer (60) and directed toward the second window layer (32) in the direction of directed toward the first window layer (31). At this time, the light guide layer may have a structure in which one layer is p-type doped and includes two layers with different doping concentrations. Alternatively, the light guide layer may have a structure in which the two layers are p-type doped and have different doping concentrations. Alternatively, the light guide layer may have a structure in which the two layers are p-type doped and have the same doping concentration. By including a p-type doped layer, the light guide layer can guide light while facilitating the movement of holes.

[0117] The insulating layer (90) covers most of the exposed surface of the light-emitting element and may include SiO2. The first ohmic electrode (81) and the first electrode (101) may be electrically connected through an opening (95) of the insulating layer (90) formed on the upper surface of the first ohmic electrode (81). In addition, the second ohmic electrode (82) and the second electrode (102) may be electrically connected through an opening (95) of the insulating layer (90) formed on the upper surface of the second ohmic electrode (82). The first electrode (101) and the second electrode (102) may be formed of a conductive material and may be composed of materials such as Ge, Al, Cu, Ag, Au, Ni, Cr, Ti, Pt, Rd, Ru, W, Mo, TiW, etc.

[0118] The edge of the second electrode (102) formed on the upper surface of the second ohmic electrode (82) may be formed within the edge of the insulating layer (90). In addition, the width of the second electrode (102) may be formed to be the same as or narrower than the width of the second ohmic electrode (82). As another example, the second electrode (102) may be formed to have a width smaller than the opening (95) of the insulating layer (90). That is, the second electrode (102) may be formed in the inner region of the opening (95) of the insulating layer (90) so as to be spaced apart from the inner surface of the opening (95). Therefore, the second electrode (102) can be prevented from being exposed to moisture penetrating from the outside of the light emitting element (100).

[0119] The edge of the first electrode (101) formed on the upper surface of the first ohmic electrode (81) may extend beyond the edge of the insulating layer (90) to the upper surface of the first window layer (31). In addition, the width of the first electrode (101) may be formed wider than the width of the first ohmic electrode (81). As another example, the first electrode (101) may be formed to have a width smaller than the opening (95) of the insulating layer (90). That is, the first electrode (101) may be formed in an inner region of the opening (95) of the insulating layer (90) and may be formed to be spaced apart from the inner surface of the opening (95).

[0120] The first window layer (31) and the first cladding layer (41) of the present embodiment may be first conductivity type semiconductor layers, and the second window layer (32) and the contact layer (72) may be second conductivity type semiconductor layers. The first conductivity type and the second conductivity type have opposite polarities, and when the first conductivity type is n type, the second conductivity type is p type, and when the first conductivity type is p type, the second conductivity type is n type.

[0121] In Fig. 1, the side surface of the mesa (M) is shown to be formed vertically, but the light emitting element of the present embodiment may be formed so that at least part of the side surface of the mesa (M) is inclined.

[0122] The light-emitting module of the present embodiment can mount multiple light-emitting elements in a portion of the light-emitting module. Preferably, the area of ​​the light-emitting element (preferably the first window layer) relative to the module substrate area of ​​the light-emitting module can be 70% or more, or in the range of 0.7 to 1 times. Here, the module substrate can be a circuit board, an insulating substrate, a growth substrate, etc.

[0123] In this way, the light-emitting module of the present embodiment can be usefully used when a high-brightness red light source is required in a display device or a brake light of an automobile, since the light-emitting element is formed over the entire plane of the light-emitting module.

[0124] Although not shown, the first light-transmitting layer (20) may include side projections surrounding the outer side, thereby increasing the light diffusion efficiency of the light-emitting element (100).

[0125] Referring to FIG. 1, the outer boundary of the first light-transmitting layer (20) may be positioned outside the outer boundary of the semiconductor layer positioned on top of the first light-transmitting layer (20). Accordingly, since the first light-transmitting layer (20) has a larger area than the semiconductor layer and supports the semiconductor layer, the light-emitting element (100) or the semiconductor layer can be protected from external force.

[0126] In addition, since the horizontal width (W2) of the first light-transmitting layer (20) is wider than the horizontal width (W1) of the semiconductor layer, even if the semiconductor layer has a wide beam angle, light emitted from the semiconductor layer can be effectively emitted to the outside through the first light-transmitting layer (20).

[0127] The second light-transmitting layer (25) may include regions with different thicknesses. The thickness (T2) of a region of the second light-transmitting layer (25) that is disposed outside the outer boundary of the first window layer (31) and does not overlap with the first window layer (31) may be thinner than the thickness (T1) of a region that overlaps with the first window layer (31). In this case, the insulating layer (90) may be formed to extend to the region with the thin thickness (T2). Since the second light-transmitting layer (25) includes regions with different thicknesses, the surface area may increase, thereby increasing the path for moisture penetrating into the light-emitting element (100), thereby increasing the lifespan of the light-emitting element (100). The outer boundary of the first window layer (31) may include an inclined side surface.

[0128] Fig. 4 schematically illustrates a cross-sectional view of a light-emitting device according to a second embodiment of the present invention. Referring to Fig. 4, the first window layer (31), the second light-transmitting layer (25), and the first light-transmitting layer (20) can be formed such that their outer boundaries are parallel to each other. Accordingly, the light-emitting device (100) according to the second embodiment can be miniaturized.

[0129] FIG. 5 schematically illustrates a cross-sectional view of a light-emitting device according to a third embodiment of the present invention. Referring to FIG. 5, the outer edge of the first light-transmitting layer (20) may be exposed from the second light-transmitting layer (25). That is, the first light-transmitting layer (20) may be formed such that the outer edge is positioned outside the outer boundary of the second light-transmitting layer (20). In addition, the exposed surface of the first light-transmitting layer (20) may be covered with an insulating material. The insulating material may be the same as the insulating layer (90) of the light-emitting device (300) or may be a different material from the second light-transmitting layer (25). The insulating material may cover the side surface of the second light-transmitting layer (25). The light-emitting device (300) according to the third embodiment may have a refractive index that changes at the interface where the first light-transmitting layer (20) and the insulating layer (90) come into contact, thereby enabling effective light extraction from the side surface and near the side surface of the first light-transmitting layer (20).

[0130] Figures 6 and 7 are drawings for explaining a light-emitting device according to a fourth embodiment of the present invention. Figure 6 is a schematic cross-sectional view of a light-emitting device according to a fourth embodiment of the present invention. In addition, Figure 7 is an enlarged view of a region (B) of a light-emitting device according to a fourth embodiment of the present invention.

[0131] Referring to FIG. 6, the light emitting element (400) may include a semiconductor layer (401), a first ohmic electrode (460), a first electrode (470), a second electrode (440), and an insulating layer (450).

[0132] The semiconductor layer (401) may include a first window layer (410), a second window layer (430), and an active layer (420) disposed between the first window layer (410) and the second window layer (430). The materials forming the first window layer (410), the second window layer (430), and the active layer (420) of the semiconductor layer (401) of the present embodiment refer to the descriptions of the previous embodiments. However, the structures of the first ohmic electrode (460), the first electrode (470), the second electrode (440), the semiconductor layer (401), and the insulating layer (450) are different from the previous embodiments. Hereinafter, the light-emitting element (400) of FIG. 6 will be described with a focus on the differences from the previous embodiments.

[0133] The light emitting element (400) of FIG. 6 has a vertical structure in which the first electrode (470) and the second electrode (440) are positioned in opposite directions. Referring to FIG. 6, a semiconductor layer (401) may be disposed on the second electrode (440), and an insulating layer (450), a first ohmic electrode (460), and a first electrode (470) may be disposed on the semiconductor layer (401). In addition, the semiconductor layer (401) may be disposed in a structure in which a second window layer (430), an active layer (420), and a first window layer (410) are sequentially stacked on the second electrode (440).

[0134] The second electrode (440) may include a plurality of conductive layers. For example, the second electrode (440) may include first to fifth conductive layers (445).

[0135] The first conductive layer (441) is disposed under the second window layer (430) and can be electrically connected to the second window layer (430) by contacting it. The first conductive layer (441) can have a single-layer or multi-layer structure including at least one material selected from the group consisting of Ag, Pt, and W.

[0136] The second conductive layer (442) is disposed below the first conductive layer (441) and may be formed of a material including at least one of Ti, Ni, and Al. The electrical resistivity of the second conductive layer (442) may be greater than the electrical resistivity of at least one material among the materials forming the first conductive layer (441). Therefore, the second conductive layer (442) can distribute the current injected into the second conductive layer (442) so that it is uniformly supplied to a wide area of ​​the first conductive layer (441).

[0137] The third conductive layer (443) is located below the second conductive layer (442) and may have a single-layer or multi-layer structure including at least one material selected from Au and In. The third conductive layer (443) is formed of a material having a lower electrical resistance than the second conductive layer (442), and thus can smoothly accommodate a large amount of current.

[0138] The fourth conductive layer (444) is disposed below the third conductive layer (443) and may be formed of a material including at least one of Ti, Ni, and Al. The fourth conductive layer (444) is formed of a material having a lower coefficient of thermal expansion than the third conductive layer (443), thereby preventing separation of the electrodes and formation of voids due to thermal deformation. The fifth conductive layer (445) is disposed below the fourth conductive layer (444) and may be formed of a material including Si. The fifth conductive layer (445) may be electrically connected to an external component such as a circuit board by contacting it.

[0139] At least one layer of a current spreading layer or an ohmic contact layer may be positioned between the semiconductor layer (401) and the second electrode (440). The current spreading layer may spread the current injected through the second electrode (440) so that it uniformly passes through the entire area of ​​the second window layer (430). For example, the current spreading layer may be formed of an insulating material such as SiO2. The ohmic contact layer may be formed of a conductive material capable of forming an ohmic contact with the second window layer (430).

[0140] The current spreading layer and the ohmic contact layer may be disposed on the lower surface of the second window layer (430). For example, a plurality of current spreading layers and a plurality of ohmic contact layers may be formed on the lower surface of the second window layer (430). In addition, the current spreading layers and the ohmic contact layers may be disposed in an alternating manner along the lower surface of the second window layer (430). At this time, the first conductive layer (441) of the second electrode (440) may be formed to cover the plurality of current spreading layers and the plurality of ohmic contact layers. In addition, when the plurality of current spreading layers and the plurality of ohmic contact layers are spaced apart from each other, the first conductive layer (441) may be formed to fill the spaced area and may come into contact with the second window layer (430).

[0141] The insulating layer (450) may be formed to cover the side and upper surfaces of the semiconductor layer (401). For example, the insulating layer (450) may be formed of an insulating material such as SiO2.

[0142] The insulating layer (450) may include an opening that exposes a portion of the upper surface of the first window layer (410). Alternatively, the insulating layer (450) may include one first opening (451) and one or more second openings (452). In addition, the second opening (452) may be formed to extend from the first opening (451). A main electrode (471) of the second electrode (440) may be disposed in the first opening (451). In addition, one or more connection areas connected to the main electrode (471) of the second electrode (440) may be disposed in one or more second openings (452) connected to the first opening (451).

[0143] In addition, the opening of the insulating layer (450) may have a structure in which the width increases upward from the upper surface of the first window layer (410). That is, the inner surface of the insulating layer (450) forming the opening may be an inclined surface. In addition, the third angle (θ3) formed by the inner surface forming the opening of the insulating layer (450) and the lower surface of the insulating layer (450) may be an acute angle. Therefore, the distance between the insulating layer (450) and the first electrode (470) increases upward, thereby preventing the side surface of the insulating layer (450) from being damaged by heat emitted from the first electrode (470).

[0144] A first ohmic electrode (460) may be formed on the upper surface of the first window layer (410) exposed by the opening of the insulating layer (450). The first ohmic electrode (460) may make ohmic contact with the first window layer (410). The first ohmic electrode (460) may be formed of the same material as the first ohmic electrode of the previous embodiments (81 of FIGS. 1, 4, and 5).

[0145] Also, referring to FIG. 6, the first ohmic electrode (460) according to the present embodiment may include a first region (461) and a second region (462) having different material compositions. Since the material compositions are different, the first region (461) and the second region (462) may have different thermal expansion coefficients. The thermal expansion coefficient of one of the first region (461) and the second region (462) may be between the thermal expansion coefficient of the first electrode (470) and the thermal expansion coefficient of the other region. For example, the thermal expansion coefficient of the first region (461) may be between the thermal expansion coefficient of the first electrode (470) and the thermal expansion coefficient of the second region (462). Accordingly, the first electrode (470) can be prevented from being peeled off due to the difference in thermal expansion coefficient between the first electrode (470) and the first ohmic electrode (460) by the first region (461) of the first ohmic electrode (460). Or, conversely, the thermal expansion coefficient of the second region (462) can be between the thermal expansion coefficient of the first electrode (470) and the thermal expansion coefficient of the first region (461). In this case, the first electrode (470) can be prevented from being peeled off due to the difference in thermal expansion coefficient between the first electrode (470) and the first ohmic electrode (460) by the second region (462).

[0146] A first electrode (470) may be arranged on the upper surface of the first ohmic electrode (460). The first electrode (470) may be in contact with or electrically connected to an external component such as a circuit board. In FIG. 6, the first electrode (470) is formed to have an upper surface positioned higher than the upper surface of the insulating layer (450), but is not limited thereto.

[0147] Referring to FIG. 6, the semiconductor layer (401) of the present embodiment has a different structure from the semiconductor layers of the previous embodiments. The first window layer (410) of the semiconductor layer (401) of the present embodiment may include an electrode arrangement region (415) in which a first electrode (470) is arranged. More specifically, a first ohmic electrode (460) and a first electrode (470) may be arranged in the electrode arrangement region (415). The electrode arrangement region (415) has a structure that protrudes upward compared to other regions of the first window layer (410). Therefore, the upper surface of the electrode arrangement region (415) is positioned higher than the upper surfaces of the other regions on the upper surface of the first window layer (410). That is, the upper surface of the first window layer (410) has a concave region and a convex region, and the convex region is the electrode arrangement region (415) in which the first electrode (470) is arranged. Since the electrode placement area (415) is a convex area, it can have a top surface and a side surface.

[0148] The electrode arrangement area (415) may include a main electrode arrangement area (411) in which the main electrode (471) of the first electrode (470) is arranged and an extension electrode arrangement area (412) in which the extension electrode (472) of the first electrode (470) is arranged. The electrode arrangement area (415) has a structure in which a plurality of extension electrode arrangement areas (412) extend from the main electrode arrangement area (411) corresponding to the structure of the first electrode (470).

[0149] The main electrode arrangement area (411) may have a width (W3) of the upper area greater than the width (W4) of the lower area. In this case, the main electrode arrangement area (411) may increase the contact area between the first ohmic electrode (460) and the first window layer (410) compared to a structure in which the widths of the upper area and the lower area are the same. Therefore, the light-emitting element (400) of the present embodiment may have a sufficient contact area between the first ohmic electrode (460) and the first window layer (410) due to the main electrode arrangement area (411).

[0150] According to the present embodiment, at least one of the main electrode placement area (411) or the extension electrode placement area (412) may have at least one angle formed by the upper surface and the side surface based on a vertically cut cross-section that is an acute angle. For example, in the main electrode placement area (411), a first angle (θ1) formed by the upper surface and one side surface may be an acute angle, and a second angle (θ2) formed by the upper surface and the other side surface may be a right angle or an obtuse angle. Accordingly, the area where the first electrode (470) is placed may be secured widely to reduce electrical resistance. Referring to FIG. 6, in the present embodiment, the second angle (θ2) is an obtuse angle.

[0151] According to the present embodiment, the light emitting element (400) may have an inclined direction of at least one side of the electrode arrangement area (415) that is the same as the inclined direction of one inner side of the insulating layer (450). More specifically, at least one side of the main electrode arrangement area (411) may have an inclined direction that is the same as that of one inner side of the insulating layer (450) forming the first opening (451). Here, the inner side of the insulating layer (450) is an area adjacent to one side of the main electrode arrangement area (411) among the inner sides of the insulating layer (450) arranged on the main electrode arrangement area (411), and is an area arranged in an upper direction of one side of the main electrode arrangement area (411).

[0152] Referring to FIG. 6, one side of the main electrode arrangement area (411) and one inner side of the insulating layer (450) forming the first opening (451) have the same inclination direction, and the other side of the main electrode arrangement area (411) and the other inner side of the insulating layer (450) forming the first opening (451) have different inclination directions. However, the structure of the light-emitting element (400) of the present invention is not limited thereto, and the inclination directions of all side surfaces of the main electrode arrangement area (411) and all inner sides of the insulating layer (450) forming the first opening (451) may be the same.

[0153] According to the present embodiment, the semiconductor layer (401) may include a mesa (M) whose upper surface has a smaller cross-sectional area or narrower width than its lower surface. That is, a part or the entirety of the edge of the upper surface of the semiconductor layer (401) is located in the upper region inside the edge of the lower surface of the semiconductor layer (401). Here, the upper surface of the semiconductor layer (401) is the upper surface of the first window layer (410), and the lower surface of the semiconductor layer (401) is the lower surface of the second window layer (430).

[0154] In addition, the first window layer (410) has a structure in which the cross-sectional area or width of the upper surface is larger than the cross-sectional area or width of the lower surface of the first window layer (410). Alternatively, the cross-sectional area of ​​the upper surface of the first window layer (410) or the maximum width of the first window layer (410) may be larger than the cross-sectional area of ​​the upper surface of the second window layer (430) or the maximum width of the second window layer (430). Alternatively, the cross-sectional area of ​​the upper surface of the first window layer (410) or the maximum width of the first window layer (410) may be larger than the cross-sectional area or the maximum width of the active layer (420).

[0155] According to the present embodiment, the semiconductor layer (401) may include a region in which at least one side surface is concave inward. Referring to FIG. 6, the width of the upper surface of the first window layer (410) is smaller than the width of the upper surface of the second window layer (430), but larger than the width of the lower surface of the first window layer (410) or the active layer (420). That is, the semiconductor layer (401) has a structure in which the mesa (M) is located in the upper direction of the inner region of the lower surface edge of the second window layer (430), but the upper surface edge protrudes most outward. Therefore, the semiconductor layer (401) of the present embodiment has a structure in which the width decreases from the bottom to the top and then increases again. Accordingly, the semiconductor layer (401) may have a fourth angle (θ4) formed by the upper surface and the side surface as an acute angle. In FIG. 6, the semiconductor layer (401) includes a region in which both side surfaces are concave, but only one of the two side surfaces may include a concave region.

[0156] According to the present embodiment, the side surface of the first window layer (410) is formed to be curved so that the upper surface of the first window layer (410) has a larger area than the lower surface of the first window layer (410). By this structure of the first window layer (410), the area on which an electrode can be placed on the semiconductor layer (401) can be increased. Accordingly, the light-emitting element (400) of the present embodiment can increase the electrode placement area (415), and thus increase the area of ​​the first electrode (470).

[0157] Fig. 7 is an enlarged view of area AB of Fig. 6. Referring to Fig. 7, a portion of the area including the border of the first window layer (410) is located in the upper direction of the second window layer (430) located in the outer area of ​​the active layer (420).

[0158] According to the present embodiment, some areas of the first window layer (410) protrude further outward than other areas of the first window layer (410). An air layer and an insulating layer (450) exist between the protruding area of ​​the first window layer (410) and the second window layer (430) located underneath. Therefore, light (L) emitted from the protruding area of ​​the first window layer (410) and traveling downwards may be reflected at the interface between the air layer and the insulating layer (450) having different refractive indices and may travel upwards toward the light emitting element (400). In addition, even if light (L) emitted from the protruding area of ​​the first window layer (410) and traveling downwards passes through the insulating layer (450), light (L) may be reflected at the interface between the insulating layer (450) and the second window layer (430) having different refractive indices and may travel upwards toward the light emitting element (400). Accordingly, the light extraction efficiency of the light emitting element (400) can be improved by reflecting the light (L) emitted from the first window layer (410) and directed downward in an upward direction by the structure in which the protruding area of ​​the first window layer (410) is located in the upper direction of a portion of the second window layer (430).

[0159] Referring to FIG. 7, the semiconductor layer (401) may further include side projections (421) formed on the side surface. The side projections (421) may be positioned between the upper surface of the first window layer (410) and the lower surface of the second window layer (430). For example, the side projections (421) may be formed on the side surface of the active layer (420). The side projections (421) may be positioned on the inner side of the outer surface of the first window layer (410). The side projections (421) may be formed on the inner side of the first window layer (410) to prevent damage from the outside and increase the side light extraction area of ​​the light-emitting element (400).

[0160] In addition, according to the present embodiment, the upper surface of the semiconductor layer (401) may include an area where protrusions are formed. Referring to FIG. 6, the upper surface of the first window layer (410) has protrusions formed in an area excluding the electrode arrangement area (415). In addition, depending on the protrusions formed on the upper surface of the first window layer (410), the upper surface of the insulating layer (450) formed thereon may also have protrusions formed thereon. The light extraction area on the upper surface of the semiconductor layer (401) increases due to the protrusions formed on the upper surface of the semiconductor layer (401) and the upper surface of the insulating layer (450), and thus the light extraction efficiency on the upper surface of the semiconductor layer (401) may be improved.

[0161] In addition, according to the present embodiment, the semiconductor layer (401) has a plurality of protrusions formed on the side surface. The light extraction area on the side surface of the semiconductor layer (401) can be increased by the plurality of protrusions formed on the side surface of the semiconductor layer (401). Therefore, the light-emitting element (400) of the present embodiment can have improved light extraction efficiency on the side surface of the semiconductor layer (401).

[0162] Fig. 8 is a schematic cross-sectional view of a light-emitting device (500) according to a fifth embodiment of the present invention. In addition, Fig. 9 is a schematic cross-sectional view of a light-emitting device (600) according to a sixth embodiment of the present invention.

[0163] The light-emitting elements (500, 600) according to the fifth and sixth embodiments are the same as the light-emitting element (400) according to the fourth embodiment of FIG. 6 except for the structure of the first window layer (510, 610) of the semiconductor layer (501, 601). More specifically, the structure of the main electrode region (511, 611) of the light-emitting elements (500, 600) according to the fifth and sixth embodiments is different from the main electrode region (411 of FIG. 6) of the fourth embodiment. The light-emitting elements (500, 600) according to the fifth and sixth embodiments will be described mainly with reference to the main electrode arrangement region (511, 611).

[0164] The light-emitting elements (500, 600) according to the fifth and sixth embodiments may include electrode arrangement regions (515, 615) in which the first ohmic electrode (460) and the first electrode (470) are arranged. In addition, the electrode arrangement regions (515, 615) may include a main electrode arrangement region (511, 611) in which the main electrode (471) of the first electrode (470) is arranged, and an extension electrode arrangement region (412) in which the extension electrode (472) of the first electrode (470) is arranged. Referring to FIGS. 8 and 9, the two sides of the main electrode arrangement regions (511, 611) may have opposite slope directions or opposite slope inclinations. The main electrode arrangement regions (511, 611) may have an increasing width and cross-sectional area as they go upward.

[0165] According to the fifth and sixth embodiments, the inclination direction of at least one side of the main electrode placement area (511, 611) and the electrode placement area (415) may be the same as the inclination direction of one inner side of the insulating layer (450). More specifically, both side surfaces of the main electrode placement area (511, 611) may have the same inclination direction as both inner side surfaces of the insulating layer (450) located in the respective upper region. Referring to FIGS. 8 and 9, one side surface of the main electrode placement area (511, 611) is located in the upper region thereof and has the same inclination direction as one inner side surface of the insulating layer (450) that is closest to it. In addition, the other side surface of the main electrode placement areas (511, 611) is located in the upper region thereof and has the same inclination direction as the other inner side surface of the insulating layer (450) that is closest to it.

[0166] Additionally, the side surface of the main electrode placement area (511, 611) may be a plane or a curved surface having an incline. In the fourth and fifth embodiments of FIGS. 6 and 8, the side surface of the main electrode placement area (411, 511) is a plane. Additionally, in the sixth embodiment of FIG. 9, the side surface of the main electrode placement area (611) is a curved surface that is concave inward.

[0167] FIGS. 10 to 12 are top views of light-emitting elements for explaining embodiments of the first electrode pattern of the present invention.

[0168] Fig. 10 is a top view of a light-emitting element for explaining a first embodiment of the first electrode pattern of the present invention.

[0169] Referring to FIG. 10, the light emitting element (700) may include a first electrode (770) electrically connected to the first window layer (31). Unlike FIGS. 1, 4, and 5, the first electrode (770) may be arranged in an opposite direction of the second electrode (440) electrically connected to the second window layer with respect to the active layer. The structure of the first electrode (770) of the light emitting element (700) of FIG. 10 may be applied to the light emitting elements (400, 500, 600) of FIGS. 6, 8, and 9. The structure of the first electrodes (870, 970) of the light emitting elements (800, 900) of FIGS. 11 and 12, which will be described later, may also be applied to the light emitting elements (400, 500, 600) of FIGS. 6, 8, and 9. The structure of the second window layer and the second electrode (440) of FIGS. 10 to 12 is referred to FIGS. 6, 8, and 9.

[0170] According to the present embodiment, the first electrode (770) may include a main electrode (771) having a curved surface. For example, the main electrode (771) of the first electrode (770) may be circular. The first electrode (770) may further include an extension electrode (772) that extends from the main electrode (771) to approach an outer region of the light emitting element (700). The width (W6) of the extension electrode (772) may be narrower than the width (W5) of the main electrode (771), and the length (L1+L2) of the extension electrode (772) may be greater than the width (W5) of the main electrode (771).

[0171] Based on the top view of FIG. 10, the light emitting element (770) may include first to fourth quadrants (Q1, Q2, Q3, Q4). The extension electrodes (772) may be formed in plurality, and each extension electrode (772) may be arranged in each quadrant (Q1, Q2, Q3, Q4). The plurality of extension electrodes (772) may have a rotationally symmetrical structure based on the center of the top view or the center of the main electrode (771). Therefore, when light is emitted, the light may be reflected from the side of the extension electrode (772) of the rotationally symmetrical structure and focused in the upper direction of the light emitting element (700).

[0172] The extension electrode (772) of the first electrode (770) may include a first extension region (773) connected to the main electrode (771) and a second extension region (774) extending from the first extension region (773).

[0173] The first extension region (773) and the second extension region (774) of the extension electrode (772) can form a first angle (θ5). The first angle (θ5) formed by the first extension region (773) and the second extension region (774) can be 85 degrees or more and less than 180 degrees. The light-emitting element (700) of the present embodiment can be formed such that the first extension region (773) and the second extension region (774) of the first electrode (770) have the first angle (θ5) so that the current can be evenly distributed on one surface of the light-emitting element (700). Here, the one surface of the light-emitting element (700) is the surface on which the first electrode (770) is formed.

[0174] The point (P1) where the first extension region (773) of the extension electrode (772) and the main electrode (771) meet may be positioned close to the boundary of a quadrant. The second angle (θ6) formed by the first extension region (773) of the extension electrode (770) or the virtual extension line of the first extension region (773) and the boundary of the quadrant adjacent to the first extension region (773) may be 0 degrees or more and 60 degrees or less.

[0175] The extension electrode (772) may include a second point (P2) at which the first extension region (773) and the second extension region (774) are connected. The second extension region (774) of the extension electrode (772) may be arranged parallel to a side surface of the light-emitting element (700). Here, the side surface of the light-emitting element (770) that is parallel to the second extension region (774) is the surface closest to the end of the first extension region (773) that is connected to the second extension region (774). An imaginary line (IL) formed parallel to the side surface of the light-emitting element (700) at the second point (P2) may intersect the first extension region (773) of the adjacent extension electrode (772). Here, the side surface of the light-emitting element (700) that is parallel to the imaginary line (IL) is a surface located in a direction in which the end surface of the second extension region (774) faces.

[0176] Although not shown, at least one wire may be connected to the first electrode (770), and the wire may pass through the upper portion of at least one quadrant.

[0177] Fig. 11 is a top view of a light-emitting element for explaining a second embodiment of the first electrode pattern of the present invention. The description of the configuration of Fig. 11 will omit overlapping parts with Fig. 10 and focus on differences.

[0178] The light-emitting element (800) of the present embodiment may include a first electrode (870) including a main electrode (871) and an extension electrode (872). In addition, the extension electrode (872) may include a first extension electrode (873) extending from the main electrode (871) and a second extension electrode (874) extending from the first extension electrode (873). Referring to FIG. 11, the first extension region (873) of the extension electrode (872) may be formed parallel to a side surface of the light-emitting element (800) and may be parallel to a boundary of a quadrant. The second extension region (874) extending from the first extension region (873) of the extension electrode (872) may be formed in a vertical direction of the first extension region (873). The first extension region (873) may be electrically connected to the second extension region (874) between both ends of the second extension region (874). The second extension region (874) may be formed in at least one quadrant and may extend to an adjacent quadrant. The length (L3) of the region disposed in one quadrant of the second extension region (874) may be longer than the length (L4) of the region disposed in the adjacent quadrant.

[0179] According to the present embodiment, the angle (θ6) formed by the first extension region (873) and the second extension region (874) of the extension electrode (872) may be substantially similar to the angle (θ7) formed by the two side surfaces forming the corners of the light emitting element (800).

[0180] Fig. 12 is a top view of a light-emitting element for explaining a third embodiment of the first electrode pattern of the present invention. Descriptions overlapping with the previously described embodiments are omitted.

[0181] The light emitting element (900) of the present embodiment may include a first electrode (970) including a main electrode (971) and an extension electrode (972). In addition, the extension electrode (972) may include a first extension electrode (973) extending from the main electrode (971) and a second extension electrode (974) extending from the first extension electrode (973). Referring to FIG. 12, the first extension regions (973) of the extension electrodes (972) facing each other with respect to the main electrode (971) of the first electrode (970) may be arranged on the same line. In addition, the first extension regions (973) of the extension electrodes (972) may be arranged at the boundary of a quadrant.

[0182] The end of the second extension region (974) of the extension electrode (972) may be in contact with a virtual line (IL) extended from the end of the second extension region (974) of the adjacent extension electrode (972) or may be positioned further inward than the virtual line (IL) so as not to intersect each other.

[0183] FIG. 13 is a drawing for explaining a light-emitting module to which a light-emitting element according to an embodiment of the present invention is applied.

[0184] Referring to FIG. 13, a light-emitting module (1000) may include a circuit board (1600) and a light-emitting package (1001) disposed on the circuit board (1600). In addition, the light-emitting package (1001) includes a first lead (1100), a second lead (1200), a body (1300), and a light-emitting element (1400). Here, the light-emitting element (1400) may be one of the light-emitting elements described through the previous embodiments. When the light-emitting module (1000) includes a plurality of light-emitting packages (1001), the light-emitting package (1001) may include at least one type of light-emitting element among the light-emitting elements described through the previous embodiments. That is, the light-emitting module (1000) may include a plurality of one type of light-emitting elements among the light-emitting elements described through the previous embodiments, or may include at least two types of light-emitting elements. Additionally, the luminescent package (1001) may further include a molding layer (1500).

[0185] The first lead (1100) and the second lead (1200) can be arranged to be spaced apart from each other, and the space between the first lead (1100) and the second lead (1200) can be filled with the base (1320) of the body (1300).

[0186] The first lead (1100) may include a first-first lead (1110) and a first-second lead (1120), and the second lead (1200) may include a second-first lead (1210) and a second-second lead (1220). The first-first lead (1110) and the first-second lead (1120) may be formed integrally, and the second-first lead (1210) and the second-second lead (1220) may also be formed integrally. The first lead (1100) and the second lead (1200) may include a material having high conductivity and high thermal conductivity. For example, the first lead (1100) and the second lead (1200) may be formed including a metal or a metal alloy.

[0187] The space between the first lead (1100) and the second lead (1200) may have a bent shape at least once.

[0188] The first-first lead (1110) is positioned on the first-second lead (1120). The first-second lead (1120) has a smaller area than the first-first lead (1110) and can be positioned within the area occupied by the first-first lead (1110). Therefore, on a plane, only the first-first lead (1110) among the first-first lead (1110) and the first-second lead (1120) is exposed on the upper surface of the light-emitting module (1000). In addition, due to the difference in area between the first-first lead (1110) and the first-second lead (1120), a multi-stage structure (1130) can be formed on the side surface of the first lead (1100). The base (1320) fills the space created by the multi-stage structure (1130), so that the first lead (1100) can be more firmly fixed to the body (1300).

[0189] The second-first lead (1210) is positioned on the second-second lead (1220). The second-second lead (1220) has a smaller area than the second-first lead (1210) and can be positioned within the area occupied by the second-first lead (1210). Therefore, on a plane, only the second-first lead (1210) among the second-first lead (1210) and the second-second lead (1220) is exposed on the upper surface of the light-emitting module (1000). In addition, due to the difference in area between the second-first lead (1210) and the second-second lead (1220), a multi-stage structure (1230) can be formed on the side surface of the second lead (1200). The base (1320) fills the space created by the multi-stage structure (1230), so that the second lead (1200) can be more firmly fixed to the body (1300).

[0190] The body (1300) may include a reflector (1310) and a base (1320).

[0191] The base (1320) may surround at least a portion of the side surfaces of the first lead (1100) and the second lead (1200), and may fill a space between the first lead (1100) and the second lead (1200). As the base (1320) fills the space between the first lead (1100) and the second lead (1200), the upper and lower surfaces of the first lead (1100) and the second lead (1200) may be exposed. Accordingly, the upper surface of the base (1320) and the upper surfaces of the leads (1100, 1200) may be positioned generally on the same plane, and the lower surface of the base (1320) and the lower surfaces of the leads (1100, 1200) may be positioned generally on the same plane. However, the present invention is not limited thereto.

[0192] The side surface of the base (1320) may have exposed portions (1400, 2400). The exposed portions (1400, 2400) may be formed parallel to the side surface of the base (1320). Alternatively, in another embodiment, the exposed portions (1400, 2400) may be formed to protrude outward from the side surface of the base (1320). Regardless of whether the light-emitting package (1001) is mounted on the circuit board (1600), electricity can be applied through the exposed portions (1400, 2400) to light up the light-emitting package (1001) or to check for defects in the light-emitting package (1001).

[0193] The reflector (1310) may be positioned in the upper region of the leads (1100, 1200). In addition, the reflector (1310) may be positioned along the outer edge of the light-emitting package (1001) composed of the base (1320) and the leads (1100, 1200). In addition, a cavity (1330) exposing a portion of the upper surface of the first lead (1100), a portion of the upper surface of the second lead (1200), and the upper surface of the base (1320) may be formed in the reflector (1310).

[0194] The reflector (1310) can reflect light emitted from the light emitting element (1400) upward. The inner wall of the reflector (1310) can be sloped to improve light reflection efficiency.

[0195] The reflector (1310) may comprise a ceramic or polymer material. For example, the reflector (1310) may comprise silicone, polyamide, or epoxy. Additionally, the reflector (3200) may further comprise a filler such as TiO2.

[0196] The light emitting element (1400) may be positioned on at least one of the first lead (1100) and the second lead (1200) in the cavity (1330) of the reflector (1310) and may be electrically connected to the first lead (1100) and the second lead (1200). In FIG. 13, the light emitting module (1000) is illustrated as including one light emitting element (1400), but may also include a plurality of light emitting elements (1400).

[0197] Referring to Fig. 13, the light emitting element (1400) may be electrically connected to the first lead (1000) by a wire (W). However, depending on the structure, the light emitting element (1400) may be placed on the first lead (1100) and the second lead (1200) and may be electrically connected to the first lead (1100) and the second lead (1200) by a conductive material.

[0198] A light-emitting package (1001) consisting of a light-emitting element (1400), leads (1100, 1200) and a body (1300) can be placed on a circuit board (1600).

[0199] The circuit board (1600) is electrically connected to the light-emitting package (1001) by including electrodes containing a conductive material, and can ultimately be electrically connected to the light-emitting element (1400).

[0200] The light-emitting module (1000) may include an IC circuit or IC driver for driving or controlling the light-emitting package (1001). The IC circuit or IC driver may be placed within the circuit board (1600) or configured separately and electrically connected to the circuit board (1600). Alternatively, the light-emitting package (1001) may include an IC circuit or IC driver, and the light-emitting module (1000) may be driven or controlled through the IC circuit or IC driver included in the light-emitting package (1001). In addition, the IC circuit or IC driver may be covered with a molding layer (1500) together with a plurality of light-emitting elements (1400). In this case, the IC circuit or IC driver can be handled in a packaged state together with the plurality of light-emitting elements (1400), so that the light-emitting module (1000) can be easily applied to a product.

[0201] In the light-emitting package (1001), the thickness from the upper surface of the first lead (1100) or the second lead (1200), the IC circuit, or the IC driver to the light-emitting surface of the molding layer (1500) may be different from the thickness from the upper surface of the light-emitting element (1400) to the light-emitting surface of the molding layer (1500). The thicknesses of components such as the IC circuit or the IC driver and the light-emitting element (1400) may be different from each other. In this case, the molding part (1500) may cover components having different thicknesses so that the entire area of ​​the light-emitting surface is located at the same position. Here, in the present embodiment, the light-emitting surface may be the upper surface of the molding part (1500).

[0202] The light-emitting elements and light-emitting modules described in the embodiments of the present invention can be applied to a light-emitting system. According to an embodiment of the present invention, the light-emitting system may include a plurality of light-emitting modules arranged in sections. Furthermore, the light-emitting system can freely arrange various light-emitting modules in each area as desired by the user.

[0203] For example, if the light-emitting system implements a single color, the light-emitting system may include a plurality of light-emitting modules that emit light of similar peak wavelengths with a deviation of the peak wavelengths within 5 nm. Alternatively, if the light-emitting system implements all colors, the light-emitting system may include a plurality of light-emitting modules that emit light of different colors.

[0204] According to an embodiment of the present invention, the light-emitting system can be applied to a display in an automobile. In particular, the light-emitting system can be applied to taillights, such as brake lights, in automobiles, and charging signal lights in electric vehicles.

[0205] According to an embodiment of the present invention, the light-emitting system may be configured to display a string of characters (e.g., English, numbers, Korean, etc.). For example, the light-emitting system may display a first character in a first area of ​​the display, a second character in a second area, a third character in a third area, and a fourth character in a fourth area. Thus, the light-emitting system applied to the display can transmit various information to the outside.

[0206] Additionally, according to embodiments of the present invention, the light-emitting system may be configured to be implemented through a subscription service. For example, the light-emitting system may be configured to display or illuminate a user's subscription to a service that allows them to use specific colors, characters, shapes, etc.

[0207] In another embodiment, the light-emitting device of the present invention may be provided in a plant lighting module that promotes plant growth. The plant lighting module may include a circuit board and a plurality of light-emitting devices mounted on the circuit board. The plurality of light-emitting devices may be of at least one type among the embodiments described above.

[0208] Although the present invention has been described above with reference to preferred embodiments thereof, it will be understood by those skilled in the art or having ordinary knowledge in the art that various modifications and changes may be made to the present invention without departing from the spirit and technical scope of the present invention as set forth in the claims to be described below.

[0209] Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the patent claims.

Claims

1. A semiconductor layer including a first window layer doped with a first dopant, a second window layer doped with a second dopant, and an active layer disposed between the first window layer and the second window layer. An insulating layer covering the semiconductor layer and including an opening exposing a portion of at least one of the first window layer and the second window layer; a first electrode electrically connected to the first window layer; and A second electrode electrically connected to the second window layer; The first window layer protrudes in the direction in which the first electrode is arranged and includes an electrode arrangement area in which the first electrode is arranged, A light emitting element in which at least one area of ​​the electrode arrangement region has an acute angle formed between the upper surface and the side surface.

2. In claim 1, The above semiconductor layer includes a mesa, The above mesa is a light-emitting element whose width or cross-sectional area decreases toward the top and then increases again.

3. In claim 2, A light emitting device in which the upper surface of the semiconductor layer has a smaller cross-sectional area or width than the lower surface of the semiconductor layer, and the semiconductor layer includes a protruding region in which a portion of the upper surface of the semiconductor layer protrudes further outward than a side surface of the mesa.

4. In claim 1, A light emitting element in which at least one region of the above electrode arrangement regions has a width of an upper region greater than a width of a lower region.

5. In claim 4, The inclination direction of at least one side of the electrode arrangement area is the same as the inclination direction of one inner side of the insulating layer, A light emitting element in which one inner surface of the insulating layer is an area adjacent to one inner surface of the electrode arrangement area among the inner surfaces of the insulating layer forming the opening on the electrode arrangement area.

6. In claim 1, A light emitting element further comprising a first ohmic electrode formed between the first electrode and the first window layer.

7. In claim 6, The above first ohmic electrode includes a first region and a second region having different coefficients of thermal expansion, A light emitting element wherein the coefficient of thermal expansion of the first region is between the coefficient of thermal expansion of the first electrode and the coefficient of thermal expansion of the second region.

8. In claim 1, A light emitting element further comprising a side projection formed on a side surface between the upper surface of the first window layer and the lower surface of the second window layer.

9. A semiconductor layer including a first window layer doped with a first dopant, a second window layer doped with a second dopant, and an active layer disposed between the first window layer and the second window layer; An insulating layer covering the semiconductor layer and including an opening exposing a portion of at least one of the first window layer and the second window layer; a first electrode electrically connected to the first window layer; and A second electrode electrically connected to the second window layer; A light emitting element in which the side of the above active layer is positioned inward relative to the outermost side of the above first window layer.

10. In claim 9, The semiconductor layer includes a mesa whose upper surface has a smaller cross-sectional area or width than the lower surface of the semiconductor layer, The above mesa is a light emitting element whose width or cross-sectional area decreases toward the top and then increases again.

11. In claim 9, The first window layer includes an electrode placement area where the first electrode is placed, The above electrode arrangement region is a light emitting element that protrudes further in the direction in which the first electrode is arranged than other regions of the first window layer.

12. In claim 11, A light emitting element in which at least one region of the above electrode arrangement area has a width of an upper region greater than a width of a lower region.

13. In claim 10, A light emitting element in which at least one area of ​​the electrode arrangement region has at least one acute angle formed between the upper surface and the side surface.

14. In claim 9, Further comprising a first ohmic electrode formed between the first electrode and the first window layer and including a first region and a second region having different thermal expansion coefficients; A light emitting element wherein the coefficient of thermal expansion of the first region is between the coefficient of thermal expansion of the first electrode and the coefficient of thermal expansion of the second region.

15. In claim 9, A light emitting element further comprising a side projection formed on a side surface between the upper surface of the first window layer and the lower surface of the second window layer.

16. A semiconductor layer including a first window layer doped with a first dopant, a second window layer doped with a second dopant, and an active layer disposed between the first window layer and the second window layer; An insulating layer covering the semiconductor layer and including an opening exposing a portion of at least one of the first window layer and the second window layer; a first electrode electrically connected to the first window layer; and A second electrode electrically connected to the second window layer; A light emitting element in which the semiconductor layer includes a side projection formed on a side surface between the upper surface of the first window layer and the lower surface of the second window layer.

17. In claim 16, The above side protrusions are light emitting elements formed on the side of the active layer.

18. In claim 16, The semiconductor layer includes a mesa having a structure in which the width or cross-sectional area decreases and then increases as it goes upward, A light emitting device in which the upper surface of the semiconductor layer has a smaller cross-sectional area or width than the lower surface of the semiconductor layer, and the semiconductor layer includes a protruding region in which a portion of the upper surface of the semiconductor layer protrudes further outward than a side surface of the mesa.

19. In claim 16, The first window layer protrudes in the direction in which the first electrode is arranged and includes an electrode arrangement area in which the first electrode is arranged, A light emitting element in which at least one region of the above electrode arrangement regions has a width of an upper region greater than a width of a lower region.

20. In claim 16, Further comprising a first ohmic electrode formed between the first electrode and the first window layer, the first ohmic electrode including a first region and a second region having different thermal expansion coefficients; A light emitting element wherein the coefficient of thermal expansion of the first region is between the coefficient of thermal expansion of the first electrode and the coefficient of thermal expansion of the second region.

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