Polymorphs of and synthetic process for an AZA-tetracyclic oxazepine inhibitor of KRAS-g12d

Abstract

Provided herein are polymorphs and crystalline forms of 2-fluoro-5-((5S,5aS,6S,9R)-1-fluoro-12-(((2R,7aS)-2-fluorotetrahydro-1H-pyrrolizin-7a(5H)-yl)methoxy)-5-methyl-5a,6,7,8,9,10-hexahydro-5H-4-oxa-3,10a,11,13,14-pentaaza-6,9-methanonaphtho[1,8-ab]heptalen-2-yl)-3-methyl-4-(trifluoromethyl)aniline (Compound of Formula (I)), pharmaceutical compositions thereof, and methods of their use, for example, in the treatment of cancer. Also provided herein are synthetic processes for the manufacture of a compound of Formula (I) (i.e., 2-fluoro-5-((5S,5aS,6S,9R)-1-fluoro-12-(((2R,7aS)-2-fluorotetrahydro-1H-pyrrolizin-7a(5H)-yl)methoxy)-5-methyl-5a,6,7,8,9,10-hexahydro-5H-4-oxa-3,10a,11,13,14-pentaaza-6,9-methanonaphtho[1,8-ab]heptalen-2-yl)-3-methyl-4-(trifluoromethyl)aniline). Also provided are compounds useful in its synthesis (e.g., those of Formulae (A), (B), (By), and (H)) and synthetic processes directed thereto.

Description

POLYMORPHS OF AND SYNTHETIC PROCESS FOR AN AZA-TETRACYCLIC OXAZEPINE INHIBITOR OF KRAS-G12D CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to and benefit of United States Provisional Application Nos.63 / 602,285 filed November 22, 2023, and 63 / 602,244, filed November 22, 2023. The disclosure of each of the foregoing applications is incorporated herein by reference in its entirety. TECHNICAL FIELD The technology described herein generally relates to polymorphs of an aza-tetracyclic oxazepine inhibitor of KRAS-G12D. The technology described herein also generally relates to synthetic processes for small organic molecules having pharmaceutical activity and, more particularly, relates to a synthesis of an aza-tetracyclic oxazepine inhibitor of KRAS-G12D. BACKGROUND Ras is a small GTP-binding protein that functions as a nucleotide-dependent switch for central growth signaling pathways. In response to extracellular signals, Ras is converted from a GDP-bound (RasGDP) to a GTP-bound (RasGTP) state, as catalyzed by guanine nucleotide exchange factors (GEFs), notably the SOS1 protein. Active RasGTPmediates its diverse growth- stimulating functions through its direct interactions with effectors including Raf, PI3K, and Ral guanine nucleotide dissociation stimulator. The intrinsic GTPase activity of Ras then hydrolyzes GTP to GDP to terminate Ras signaling. The Ras GTPase activity can be further accelerated by its interactions with GTPase-activating proteins (GAPs), including the neurofibromin 1 tumor suppressor. Mutant Ras has a reduced GTPase activity, which prolongs its activated state, thereby promoting Ras-dependent signaling and cancer cell survival or growth. Mutation in Ras that affects its ability to interact with GAP or to convert GTP back to GDP will result in a prolonged activation of the protein and consequently a prolonged signal to the cell telling it to continue to grow and divide. Because these signals result in cell growth and division, overactive RAS signaling may ultimately lead to cancer. Mutations in any one of the three main isoforms of RAS (HRas, NRas, or KRas) genes are common events in human tumorigenesis. Among the three Ras isoforms (K, N, and H), KRas is most frequently mutated. The most common KRas mutations are found at residue G12 and G13 in the P-loop and at residue Q61. G12D is a frequent mutation of KRas gene (glycine-12 to aspartate). Mutations of Ras in cancer are associated with poor prognosis. Inactivation of oncogenic Ras inmice results in tumor shrinkage. Thus, Ras is widely considered an oncology target of exceptional importance. Compound of Formula (I) (2-fluoro-5-((5S,5aS,6S,9R)-1-fluoro-12-(((2R,7aS)-2- fluorotetrahydro-1H-pyrrolizin-7a(5H)-yl)methoxy)-5-methyl-5a,6,7,8,9,10-hexahydro-5H-4- oxa-3,10a,11,13,14-pentaaza-6,9-methanonaphtho[1,8-ab]heptalen-2-yl)-3-methyl-4- (trifluoromethyl)aniline) disclosed herein is an inhibitor of G12D mutant KRas (KRas-G12D), and is thereby useful in the treatment of cancer. For a KRas-G12D inhibitor to be a useful therapeutic, it should have an appropriate balance of various characteristics including affinity and selectivity for KRas-G12D, inhibitory activity, duration of activity, oral bioavailability, tissue distribution, and stability (e.g., shelf life, formulatability, and crystallizability). An appropriate balance of such a combination of characteristics can lead to a KRas-G12D inhibitor having improved efficacy, safety, tolerability, patient compliance, efficiency of manufacturing, etc. The identification and isolation of crystalline forms can facilitate the preparation and development of KRas-G12D inhibitors having appropriate properties (including bioavailability, chemical stability, thermal stability, solubility, hygroscopicity, particle size, yield, impurity content during crystallization, drying properties, milling properties, and stability during tableting). However, there exists significant complexity surrounding the identification and selection of a solid form of a pharmaceutical compound. There is currently no reliable predictability of the number of and nature of solid forms and their practicality as a crystalline solid for use as an active pharmaceutical ingredient. Further, it is known that different crystalline forms of a small molecule may in some instances have different levels of bioavailability, for example deriving from different solubilities under certain conditions (e.g., within the human body). Despite this, it is not predictable how many polymorphs of a given small molecule exist, under what conditions they form, or what their properties would be. Mixtures of single-component crystalline materials arise from polymorphism and it is not possible to predict, a priori, if crystalline forms of a compound even exist, let alone how to successfully prepare them. See, for example, Cruz-Cabesa et al., “Facts and fictions about polymorphism,” Chem. Soc. Rev., 44, 8619 (2015). See also, Jones et al., 2006, “Pharmaceutical Cocrystals: An Emerging Approach to Physical Property Enhancement,” MRS Bulletin 31:875- 879 (at present it is not generally possible to computationally predict the number of observable polymorphs of even the simplest molecules). Accordingly, there remains a need for identifying and isolating stable crystalline forms of a compound of Formula (I) (2-fluoro-5-((5S,5aS,6S,9R)-1-fluoro-12-(((2R,7aS)-2- fluorotetrahydro-1H-pyrrolizin-7a(5H)-yl)methoxy)-5-methyl-5a,6,7,8,9,10-hexahydro-5H-4-oxa-3,10a,11,13,14-pentaaza-6,9-methanonaphtho[1,8-ab]3eptalene-2-yl)-3-methyl-4- (trifluoromethyl)aniline). Moreover, certain exemplary processes for preparing the compound of Formula (I) are disclosed in U.S. Provisional Application No.63 / 343,959, filed May 19, 2022, and in International Application No. PCT / US2023 / 022914, filed May 19, 2023, the disclosures of which are incorporated by reference herein in their entities. However, there is often a desire to devise a synthetic process that provides the product in an efficient manner, for example a product that is tolerably free from quantities of undesirable impurities, is made by using environmentally sustainable steps or with inexpensive and reasonably available reagents, and with appropriate yields. Accordingly, the processes for the synthesis of the compound of Formula (I) of the present disclosure advantageously provide beneficial aspects such as one or more of: energy-efficient process conditions, convenient reagent selection, complexity of required unit operations, scalability, and others. SUMMARY Provided herein are solutions to the problems above and other problems in the art. More specifically, the present disclosure provides various polymorphs (including crystalline forms) of a compound of Formulawell as pharmaceutical compositions thereof, and methods of using said crystalline forms and pharmaceutical compositions, for example, in the treatment of cancer. In one aspect, the disclosure provides a crystalline form of a compound of Formula (I). In some embodiments, the crystalline form is an anhydrous crystalline form (i.e., anhydrate). In some embodiments, the anhydrous crystalline form is Form J, Form O, Form U, Form AC, or Form AG. In some embodiments, the anhydrous crystalline form is Form J. In some embodiments, the anhydrous crystalline form is Form O. In some embodiments, the anhydrous crystalline form is Form U. In some embodiments, the anhydrous crystalline form is Form AC. In some embodiments, the anhydrous crystalline form is Form AG. In some embodiments, the crystalline form is a hydrated crystalline form (i.e., hydrate). In some embodiments, the hydrated crystalline form is Form D, Form G, Form N, Form Q, Form AA, Form AK, or Form AL. In some embodiments, the hydrated crystalline form is Form D. Insome embodiments, the hydrated crystalline form is Form G. In some embodiments, the hydrated crystalline form is Form N. In some embodiments, the hydrated crystalline form is Form Q. In some embodiments, the hydrated crystalline form is Form AA. In some embodiments, the hydrated crystalline form is Form AK. In some embodiments, the hydrated crystalline form is Form AL. In some embodiments, the crystalline form is a solvated crystalline form (i.e., solvate). In some embodiments, the solvated crystalline form is a 2-methyl-tetrahydrofuran (2-MeTHF), acetonitrile (ACN), tetrahydrofuran (THF), dimethylformamide (DMF), 1,4-dixoane, dimethylacetamide (DMAc), isopropanol (IPA), methyl tert-butyl ether (MTBE), ethyl acetate (EtOAc), acetone, isopropyl acetate (IPAc), chloroform (CHCl3), dichloromethane (DCM), cyclopentyl methyl ether (CPME), anisole, diisopropyl ether, toluene, N-methyl-2-pyrrolidone (NMP), dimethyl sulfoxide (DMSO), 1,2-propanediol, 1,2-dimethoxyethane, or 2-tert- butoxyethanol solvate. In some embodiments, the solvated crystalline form is Form A, Form C / S, Form E, Form F, Form H, Form I, Form L, Form M, Form R, Form T, Form V, Form W, Form X, Form Y, Form Z, Form AD, Form AE, Form AH, Form AI, Form AJ, Form AP, Form AQ, or Form AR described herein. In some embodiments, the solvated crystalline form is Form A. In some embodiments, the solvated crystalline form is Form C / S. In some embodiments, the solvated crystalline form is Form E. In some embodiments, the solvated crystalline form is Form F. In some embodiments, the solvated crystalline form is Form H. In some embodiments, the solvated crystalline form is Form I. In some embodiments, the solvated crystalline form is Form L. In some embodiments, the solvated crystalline form is Form M. In some embodiments, the solvated crystalline form is Form R. In some embodiments, the solvated crystalline form is Form T. In some embodiments, the solvated crystalline form is Form V. In some embodiments, the solvated crystalline form is Form W. In some embodiments, the solvated crystalline form is Form X. In some embodiments, the solvated crystalline form is Form Y. In some embodiments, the solvated crystalline form is Form Z. In some embodiments, the solvated crystalline form is Form AD. In some embodiments, the solvated crystalline form is Form AE. In some embodiments, the solvated crystalline form is Form AH. In some embodiments, the solvated crystalline form is Form AI. In some embodiments, the solvated crystalline form is Form AJ. In some embodiments, the solvated crystalline form is Form AP. In some embodiments, the solvated crystalline form is Form AQ. In some embodiments, the solvated crystalline form is Form AR. In some embodiments, the crystalline form is a metastable crystalline form. In some embodiments, the metastable crystalline form is Form B / AF, Form K, Form AB, Form AM,Form AN, Form AO, or Form P described herein. In some embodiments, the metastable crystalline form is Form B / AF. In some embodiments, the metastable crystalline form is Form K. In some embodiments, the metastable crystalline form is Form AB. In some embodiments, the metastable crystalline form is Form AM. In some embodiments, the metastable crystalline form is Form AN. In some embodiments, the metastable crystalline form is Form AO. In some embodiments, the metastable crystalline form is Form P. In one aspect, the disclosure provides a pharmaceutical composition comprising a crystalline form of the disclosure and at least one pharmaceutically acceptable excipient. In one aspect, the disclosure provides a method of treating cancer in a subject comprising administering to the subject a therapeutically effect amount of a crystalline form or pharmaceutical composition described herein. In some embodiments, the subject is a human. In one aspect, the disclosure provides a method for regulating activity of KRas mutant protein comprising reacting the mutant protein with a crystalline form or pharmaceutical composition described herein. In one aspect, the disclosure provides a method for inhibiting proliferation of a cell population comprising contacting the cell population with a crystalline form or pharmaceutical composition described herein. In one aspect, the disclosure provides a method for inhibiting tumor metastasis in a subject comprising administering to the subject a therapeutically effective amount of a crystalline form or pharmaceutical composition described herein. In some embodiments, the subject is a human. The present disclosure also provides synthetic processes for preparing a compound of Formula-fluoro-5-((5S,5aS,6S,9R)-1-fluoro-12- (((2R,7aS)-2-fluorotetrahydro-1H-pyrrolizin-7a(5H)-yl)methoxy)-5-methyl-5a,6,7,8,9,10- hexahydro-5H-4-oxa-3,10a,11,13,14-pentaaza-6,9-methanonaphtho[1,8-ab]heptalen-2-yl)-3- methyl-4-(trifluoromethyl)aniline), as well as compounds useful in its synthesis and synthetic processes directed thereto.In one aspect, the disclosure provides a process for preparing a compound of Formulasome embodiments, the process comprises the steps of: a) reacting a compound of Formula (A) with a compound of Formula (B), to prepare a compound of Formula (C):b) reacting the compound of Formula (C) with one or more reagents to prepare a compound of Formula (D): Bocc) reacting the compound of Formula (D) with an oxidant to prepare a compound of Formula (E):d) reacting the compound of Formula (E) with a compound of Formula (F) to prepare a compound of Formula (G):e) reacting the compound of Formula (G) with a compound of Formula (Ha) to prepare a compound of Formula (Ja):tert-butyloxycarbonyl; and f) reacting the compound of Formula (Ja) with an acidic reagent to prepare the compound of Formula (I). In some embodiments, the process comprises the steps of: a) reacting a compound of Formula (A) with a compound of Formula (B), to prepare a compound of Formula (C): Bocb) reacting the compound of Formula (C) with one or more reagents to prepare a compound of Formula (D):c) reacting the compound of Formula (D) with an oxidant to prepare a compound of Formula (E):d) reacting the compound of Formula (E) with a compound of Formula (F) to prepare a compound of Formula (G): Boce) reacting the compound of Formula (G) with a compound of Formula (H) to prepare a compound of Formula (J): Boc, wherein PMB is para- methoxybenzyl; and f) reacting the compound of Formula (J) with an acidic reagent to prepare the compound of Formula (I). In another aspect, the disclosure provides a process for preparing a compound of Formulasome embodiments, the process comprises the steps of: a) reacting a compound of Formula (Aw) with TMPMgCl·LiCl, and BrCF2CF2Br to prepare a compound of Formula (Ax):b) reacting the compound of Formula (Ax) with NHS and EDC to prepare a compound of Formula (Ay):c) reacting the compound of Formula (Ay) with S-methylisothiourea to prepare a compound of Formula (Az):d) reacting the compound of Formula (Az) with NMI and DMA to prepare a compound of Formula (A). In one aspect, the present disclosure provides a process for preparing a compound of Bocsome embodiments, the process comprises the steps of: a) reacting a compound of Formula (Bv) with benzyl bromide to prepare a compound of Formula (Bw):(Bw); b) reacting the compound of Formula (Bw) with s-BuLi, TMEDA, and acetaldehyde to prepare a mixture of a compound of Formula (Bx’) and a compound of Formula (Bx’’):c) reacting the mixture of a compound of Formula (Bx’) and a compound of Formula (Bx”) with H2, Pd / C, and D(+)-10-camphorsulfonic acid to prepare a compound of Formulad) reacting the compound of Formula (By) with (Boc)2O to prepare a compound of Formula (Bz):e) reacting the compound of Formula (Bz) with a basic reagent to prepare the compound of Formula (B).

[0026] In a further aspect, provided herein is a process for preparing a compound of Formula (H). In some embodiments, the process comprises the steps of: a) reacting a compound of Formula (Hu) with NBS to prepare a compound of Formulab) reacting the compound of Formula (Hv) with hydrogen over a Platinum / Vanadium / Carbon catalyst, to prepare a compound of Formula (Hw);c) reacting the compound of Formula (Hw) with PMBCl to prepare a compound of Formula (Hx):e) reacting the compound of Formula (Hy) with MeO2CCF2SO2F in the presence of CuI to prepare a compound of Formula (Hz):f) reacting the compound of Formula (Hz) with n-BuLi and B(OiPr)3 to prepare the compound of Formula (H). In one aspect, the present disclosure provides compounds useful in the synthesis of a compound of Formula (I). In some embodiments, the compound is a compound of Formulasome embodiments, the compound is a compound ofBRIEF DESCRIPTION OF THE FIGURES Figure 1 depicts an exemplary X-ray Powder Diffraction (XRPD) pattern for Form J. Figure 2 depicts an exemplary XRPD pattern for Form O. Figure 3 depicts an exemplary XRPD pattern for Form U. Figure 4 depicts an exemplary XRPD pattern for Form AC. Figure 5A depicts an exemplary XRPD pattern for Form AG. Figure 5B depicts exemplary Thermogravimetric Analysis (TGA)(upper) and Differential Scanning Calorimetry (DSC)(lower) thermograms for Form AG. Figure 5C depicts an exemplary DVS plot for Form AG. Figure 5D depicts an exemplary SEM micrograph for Form AG. Figure 5E depicts overlaid exemplary XRPD patterns for Form AG obtained: after heating at 80 °C and 51% RH for 21 days (upper); after heating at 70 °C and 75% RH for 28 days (middle); and at ambient temperature and RH (lower). Figure 5F depicts overlaid exemplary XRPD patterns for Form AG obtained after slurrying in water for 8 days (upper), after slurrying in water for 3 days (middle), and without slurrying in water (lower). Figure 6 depicts an exemplary XRPD pattern for Form D. Figure 7 depicts overlayed exemplary XRPD patterns for Form G obtained before (upper) and after drying (lower).Figure 8 depicts an exemplary XRPD pattern for Form N. Figure 9 depicts an exemplary XRPD pattern for Form Q. Figure 10 depicts an exemplary XRPD pattern for Form AA. Figure 11 depicts an exemplary XRPD pattern for Form AK. Figure 12 depicts an exemplary XRPD pattern for Form AL. Figure 13 depicts an exemplary XRPD pattern for Form A. Figure 14 depicts an exemplary XRPD pattern for Form C / S. Figure 15 depicts an exemplary XRPD pattern for Form E. Figure 16 depicts an exemplary XRPD pattern (upper) overlayed with a calculated / predicted XRPD pattern (lower) for Form F. Figure 17 depicts an exemplary XRPD pattern for Form H. Figure 18 depicts an exemplary XRPD pattern for Form I. Figure 19 depicts an exemplary XRPD pattern for Form L. Figure 20 depicts an exemplary XRPD pattern for Form M. Figure 21 depicts an exemplary XRPD pattern for Form R. Figure 22 depicts an exemplary XRPD pattern for Form T. Figure 23 depicts an exemplary XRPD pattern for Form V. Figure 24 depicts an exemplary XRPD pattern for Form W. Figure 25 depicts an exemplary XRPD pattern for Form X. Figure 26 depicts an exemplary XRPD pattern for Form Y. Figure 27 depicts an exemplary XRPD pattern for Form Z. Figure 28 depicts an exemplary XRPD pattern for Form AD. Figure 29 depicts an exemplary XRPD pattern for Form AE. This XRPD pattern is for a wet sample (from toluene solvent); the dry sample has an additional peak at 9.59 ± 0.2 ^2θ and is less crystalline. Figure 30 depicts an exemplary XRPD pattern for Form AH. Figure 31 depicts an exemplary XRPD pattern for Form AI. Figure 32 depicts an exemplary XRPD pattern for Form AJ. Figure 33 depicts overlaid exemplary XRPD patterns for Form AP obtained before (upper) and after drying (lower). Figure 34 depicts an exemplary XRPD pattern for Form AQ. Figure 35 depicts an exemplary XRPD pattern for Form AR. Figure 36 depicts an exemplary XRPD pattern for Form B / AF. Figure 37 depicts an exemplary XRPD pattern for Form K.Figure 38 depicts an exemplary XRPD pattern for Form AB. Figure 39 depicts an exemplary XRPD pattern for Form AM. Figure 40 depicts an exemplary XRPD pattern for Form AN. Figure 41 depicts an exemplary XRPD pattern for Form AO. Figure 42 depicts overlaid exemplary XRPD patterns for Form AP obtained before (upper) and after drying (lower). Figure 43 depicts an X-ray Powder Diffraction (XRPD) pattern of a representative crystalline form of the Compound of Formula (I) referred to as Form AG. Figure 44 depicts a Thermogravimetric Analysis (TGA)(upper) and Differential Scanning Calorimetry (DSC)(lower) thermograms of a representative crystalline form of the Compound of Formula (I) referred to as Form AG. Figure 45 depicts a Dynamic Vapor Sorption (DVS) plot of a representative crystalline form of the Compound of Formula (I) referred to as Form AG. Figure 46 depicts an XRPD pattern of a representative crystalline form of (1S,6S,9R,9aS)-1-Methylhexahydro-1H,3H-6,9-epiminooxazolo[3,4-a]azepin-3-one (1S)-(+)- CSA salt. DETAILED DESCRIPTION Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the invention belongs. See, e.g., Singleton et al., DICTIONARY OF MICROBIOLOGY AND MOLECULAR BIOLOGY 2nd ed., J. Wiley & Sons (New York, NY 1994); Sambrook et al., MOLECULAR CLONING, A LABORATORY MANUAL, Cold Springs Harbor Press (Cold Springs Harbor, NY 1989). Any methods, devices and materials similar or equivalent to those described herein can be used in the practice of this invention. The following definitions are provided to facilitate understanding of certain terms used frequently herein and are not meant to limit the scope of the present disclosure. All references referred to herein are incorporated by reference in their entirety. The term “herein” means the entire application. It should be understood that any of the embodiments described herein, including those described under different aspects of the disclosure and different parts of the specification (including embodiments described only in the Examples) can be combined with one or more other embodiments of the disclosure, unless explicitly disclaimed or improper. Combinations of embodiments are not limited to those specific combinations claimed via any multiple dependent claims. For example, any claim that is dependent on another claim can be modified to includeone or more limitations found in any other claim that is dependent on the same base claim. Where elements are presented as lists, e.g., in Markush group format, each subgroup of the elements is also disclosed, and any element(s) can be removed from the group. It is specifically contemplated that any limitation discussed with respect to one embodiment provided herein may apply to any other embodiment provided herein. Furthermore, any crystalline form or pharmaceutical composition described herein may be used in any method provided herein, and any method provided herein may be used to produce or to utilize any crystalline form or pharmaceutical composition described herein. While the disclosure herein provides enumerated embodiments, it is understood that they are not intended to limit the crystalline forms, pharmaceutical compositions, and methods described herein to those embodiments. On the contrary, the disclosure is intended to cover all alternatives, modifications, and equivalents that can be included within the scope of the present disclosure. All of the publications, patents and published patent applications referred to in this application are specifically incorporated by reference herein. In case of conflict, the present specification, including its specific definitions, will control. In addition, any particular embodiment of the present disclosure that falls within the prior art may be explicitly excluded from any one or more of the claims. Because such embodiments are deemed to be known to one of ordinary skill in the art, they may be excluded even if the exclusion is not set forth explicitly herein. Any particular embodiment of the disclosure can be excluded from any claim, for any reason, whether or not related to the existence of prior art. Recitations of ranges of values herein are merely intended to serve as a shorthand method of referring individually to each separate value falling within the range and including the endpoints, unless otherwise indicated herein, and each separate value is incorporated into the specification as if it were individually recited herein. All methods described herein can be performed in any suitable order unless otherwise indicated herein or otherwise clearly contradicted by context. The use of any and all examples, or exemplary language (e.g., “such as”) provided herein, is intended merely to better illuminate the embodiments and does not pose a limitation on the scope of the claims unless otherwise stated. No language in the specification should be construed as indicating any non-claimed element as essential. As used herein, the terms “a” and “an” and “the” and similar referents in the context of describing the elements (especially in the context of the following claims) are to be construed to cover both the singular and the plural, unless otherwise indicated herein or clearly contradicted by context.As used herein, and unless otherwise specified, the terms “about” and “approximately,” when referring to doses, amounts, or weight percents of ingredients of a composition or a dosage form, mean a dose, amount, or weight percent that is recognized by one of ordinary skill in the art to provide a pharmacological effect equivalent to that obtained from the specified dose, amount, or weight percent. The equivalent dose, amount, or weight percent can be within 30%, 20%, 15%, 10%, 5%, 1%, or less of the specified dose, amount, or weight percent. In particular embodiments, the equivalent dose, amount, or weight percent is within 10%, within 5%, or within 1% of the specified dose, amount, or weight percent. As used herein, and unless otherwise specified, the terms “about” and “approximately,” when referring to a numeric value or range of values used for characterization of a particular solid form described herein (e.g., XRPD peak values) indicate that the value or range of values may deviate from a given value to an extent deemed reasonable to one of ordinary skill in the art while still describing the solid form. In one embodiment, the value of an XRPD peak position may vary by up to ±0.1° 2θ (or ±0.05 degree 2θ) while still describing the particular XRPD peak. Additionally, as used herein, and unless otherwise specified, the terms “about” and “approximately,” when referring to a numeric value or range of values indicate that the value or range of values may deviate from a given value to an extent deemed reasonable to one of ordinary skill in the art while still describing the process. The term “or” as used herein should be understood to mean “and / or,” unless the context clearly indicates otherwise. Throughout this specification, the word “comprise” or variations such as “comprises” or “comprising” will be understood to imply the inclusion of a stated integer (or components) or group of integers (or components), but not the exclusion of any other integer (or components) or group of integers (or components). The term “including,” as used herein, means “including but not limited to.” “Including” and “including but not limited to” are used interchangeably. Thus, these terms will be understood to imply the inclusion of a stated integer (or components) or group of integers (or components), but not the exclusion of any other integer (or components) or group of integers (or components). Throughout the specification, where compositions are described as having, including, or comprising (or variations thereof), specific components, it is contemplated that compositions also may consist essentially of, or consist of, the recited components. Similarly, where methods or processes are described as having, including, or comprising specific process steps, the processes also may consist essentially of, or consist of, the recited processing steps. Further, itshould be understood that the order of steps or order for performing certain actions is immaterial so long as the compositions and methods described herein remains operable. Moreover, two or more steps or actions can be conducted simultaneously. Any one of the process steps or sequences disclosed and / or claimed herein can be performed under an inert gas atmosphere, more particularly under nitrogen or argon. In addition, the methods and processes of the present invention may be carried out as semi- continuous or continuous processes, more preferably as continuous processes. Moreover, many of the process steps and sequences that are described herein can be telescoped. Generally, telescoped reactions are carried out in a single reactor without the need to isolate intermediates. Compounds described or used in the processes described herein may contain one or more asymmetric carbon atoms. Accordingly, the compounds may exist as diastereomers, enantiomers or mixtures thereof. The syntheses of the compounds may employ racemates, diastereomers or enantiomers as starting materials or as intermediates. Mixtures of particular diastereomeric compounds may be separated, or enriched in one or more particular diastereomers, by chromatographic or crystallization methods. Similarly, enantiomeric mixtures may be separated, or enantiomerically enriched, using the same techniques or others known in the art. Each of the asymmetric carbon or nitrogen atoms may be in the R or S configuration and both of these configurations are contemplated herein. In the structures shown herein, where the stereochemistry of any particular chiral atom is not specified, then all stereoisomers are contemplated and included. Where stereochemistry is specified by a solid wedge or dashed line representing a particular configuration, then that stereoisomer is so specified and defined. Unless otherwise specified, if solid wedges or dashed lines are used, relative stereochemistry is intended. The term “stereoisomers” refer to compounds that have identical chemical constitution but differ with regard to the arrangement of the atoms or groups in space. Stereoisomers include diastereomers, enantiomers, atropisomers, conformers and the like. The term “chiral” refers to molecules that have the property of non-superimposability of the mirror image partner, while the term “achiral” refers to molecules which are superimposable on their mirror image partner. The term “diastereomer” refers to a stereoisomer with two or more centers of chirality and whose molecules are not mirror images of one another. Diastereomers have different physical properties, e.g., melting points, boiling points, spectral properties or biologicalactivities. Mixtures of diastereomers may separate under high resolution analytical procedures such as electrophoresis and chromatography such as HPLC. The term “enantiomers” refers to two stereoisomers of a compound that are non- superimposable mirror images of one another. The term “atropisomers” refers to two conformers resulting from hindered rotation about a single bond where the steric strain barrier to rotation can be high enough to allow for the isolation of each conformer. Stereochemical definitions and conventions used herein generally follow S. P. Parker, Ed., McGraw-Hill Dictionary of Chemical Terms (1984) McGraw-Hill Book Company, New York; and Eliel, E. and Wilen, S., “Stereochemistry of Organic Compounds”, John Wiley & Sons, Inc., New York, 1994. Many organic compounds exist in optically active forms, i.e., they have the ability to rotate the plane of plane-polarized light. In describing an optically active compound, the prefixes D and L, or R and S, are used to denote the absolute configuration of the molecule about its chiral center(s). The prefixes D and L or (+) and (-) are employed to designate the sign of rotation of plane-polarized light by the compound, with (-) or L meaning that the compound is levorotatory. A compound prefixed with (+) or D is dextrorotatory. For a given chemical structure, these stereoisomers are identical except that they are mirror images of one another. A specific stereoisomer may also be referred to as an enantiomer, and a mixture of such isomers is often called an enantiomeric mixture. A 50:50 mixture of enantiomers is referred to as a racemic mixture or a racemate, which may occur where there has been no stereoselection or stereospecificity in a chemical reaction or process. The terms “racemic mixture” and “racemate” refer to an equimolar mixture of two enantiomeric species, devoid of optical activity. The term “solid form” as used herein, refers to a physical form which is not predominantly in a liquid or a gaseous state. A solid form may be a crystalline form or a mixture thereof. In certain embodiments, a solid form may be a liquid crystal. A solid form may be a crystal form as defined herein. The terms “crystalline form” and “crystal form” as used herein, are used interchangeably; distinguish between crystals that have different properties (e.g., different XRPD patterns and / or different DSC scan results); and refer to a solid form that is crystalline. In certain embodiments, a crystal form of a compound described herein may be substantially free of amorphous solids and / or other crystal forms. In certain embodiments, a crystal form of a compound described herein may contain less than about 1%, less than about 2%, less than about 3%, less than about 4%, less than about 5%, less than about 6%, less than about 7%, less thanabout 8%, less than about 9%, less than about 10%, less than about 15%, less than about 20%, less than about 25%, less than about 30%, less than about 35%, less than about 40%, less than about 45%, or less than about 50% by weight of one or more amorphous solids and / or other crystal forms. In certain embodiments, a crystal form described herein is pure. In certain embodiments, a crystal form of a compound described herein may be about 99%, 98%, 97%, 96%, 95%, 94%, 93%, 92%, 91%, or 90% pure. The term “amorphous” or “amorphous solid” as used herein, refers to a solid form that is not substantially crystalline as determined by X-ray diffraction. In particular, the term “amorphous solid” describes a disordered solid form, i.e., a solid form lacking long range crystalline order. In certain embodiments, an amorphous solid of a compound described herein may be substantially free of other amorphous solids and / or crystal forms. In certain embodiments, an amorphous solid may be pure. In certain embodiments, an amorphous solid of a compound described herein may be about 99%, 98%, 97%, 96%, 95%, 94%, 93%, 92%, 91%, or 90% pure. The terms “anhydrate” and “anhydrous” are used interchangeably herein and as applied to a compound or a crystalline form of a compound refers to a solid state wherein the compound contains no structural water or other solvent molecule within the crystal lattice. In some embodiments, the form contains no water or other solvent molecule at a level detectable by standard methods and instruments used by one of ordinary skill in the art. In some embodiments, an anhydrous form exhibits < 1% w / w weight loss when evaluated by thermogravimetry up to 150 °C. Anhydrous forms may sorb water when stored under humid conditions, for example at relative humidity (RH) of 80%. In some embodiments, an anhydrous form sorbs less than 1% w / w moisture when stored at 25°C / 80% RH. The terms “solvate” and “solvated” as used herein, refer to a crystalline form provided herein, which further includes a stoichiometric or non-stoichiometric amount of solvent bound by non-covalent intermolecular forces (e.g., hydrogen bonding). Where the solvent is water, the solvate is a “hydrate.” Where the solvent is not water, the crystalline form can be described as a solvate of that solvent. For example, wherein the solvent is ethanol, the crystalline form can be described as an ethanol solvate. The term “metastable” as used herein, generally refers to a crystalline form of a compound that transforms into one or more other, more thermodynamically stable form(s) over time. In some instances, metastable crystalline forms are more soluble, but less stable than the form(s) to which they convert.The term “characteristic peaks” when referring to the peaks in an XRPD pattern of a crystalline form of a compound of Formula (I) refers to a collection of certain peaks whose values of 2θ across a range of 0° - 40° are, as a whole, uniquely assigned to one of the crystalline forms of a compound of Formula (I). Unless otherwise defined, the XRPD pattern is obtained using a Cu Kα X-ray source. The term “stable” in the context of a polymorphic or crystalline form disclosed herein refers to the stability of the polymorphic or crystalline form relative to heat and / or humidity and / or time and / or another polymorphic or crystalline form. As used herein, and unless otherwise specified, a crystalline that is “pure,” i.e., substantially free of other crystalline or amorphous solids or other chemical compounds, and contains less than about 10%, 9%, 8%, 7%, 6%, 5%, 4%, 3%, 2%, 1%, 0.5%, 0.4%, 0.3%, 0.2%, 0.1%, 0.05%, or 0.01% of one or more other solid forms on a weight basis. The detection of other solid forms can be accomplished by, for example, diffraction analysis, thermal analysis, elemental combustion analysis and / or spectroscopic analysis. The detection of other chemical compounds can be accomplished by, for example, mass spectrometry analysis, spectroscopic analysis, thermal analysis, elemental combustion analysis and / or chromatographic analysis. The term “pharmaceutically acceptable,” refers to a diluent, excipient, or carrier in a formulation compatible with the other ingredient(s) of the formulation and not deleterious to the recipient thereof. The terms “active ingredient,” “active agent,” “active substance,” “agent,” “drug,” and “therapeutic agent” refer to a substance, which is administered, alone or in combination with one or more pharmaceutically acceptable excipients, to a subject for treating, preventing, or ameliorating one or more symptoms of a condition, disorder, or disease. “Reagent” as used herein refers to a substance that is consumed in or facilitates the course of a chemical reaction. “Yield” for each of the reactions described herein is expressed as a percentage of the theoretical yield. “Administering” or “administration of” an agent to a subject can be carried out using one of a variety of methods known to those skilled in the art. For example, an agent can be administered intravenously, arterially, intradermally, intramuscularly, intraperitoneally, subcutaneously, ocularly, sublingually, orally (by ingestion), intranasally (by inhalation), intraspinally, intracerebrally, and transdermally (by absorption, e.g., through a skin duct). A compound or agent can also appropriately be introduced by rechargeable or biodegradable polymeric devices or other devices, e.g., patches and pumps, or formulations, which provide forthe extended, slow or controlled release of the compound or agent. Administering can also be performed, for example, once, a plurality of times, and / or over one or more extended periods. In some embodiments, the administration includes both direct administration, including self- administration, and indirect administration, including the act of prescribing a drug. For example, as used herein, a physician who instructs a patient to self-administer a drug, or to have the drug administered by another and / or who provides a patient with a prescription for a drug is administering the drug to the patient. When a method is part of a therapeutic regimen involving more than one agent or treatment modality, the disclosure contemplates that the agents may be administered at the same or differing times and via the same or differing routes of administration. Appropriate methods of administering a substance, a compound or an agent to a subject will also depend, for example, on the age of the subject, whether the subject is active or inactive at the time of administering, whether the subject is cognitively impaired at the time of administering, the extent of the impairment, and the chemical and biological properties of the compound or agent (e.g. solubility, digestibility, bioavailability, stability and toxicity). The terms “co-administration,” “administered in combination with,” and their grammatical equivalents, as used herein, encompass administration of two or more agents to an animal, including humans, so that both agents and / or their metabolites are present in the subject at the same time. Co-administration includes simultaneous administration in separate compositions, administration at different times (i.e., sequential administration) in separate compositions, or administration in a composition in which both agents are present. Disease, disorder, and condition are used interchangeably herein. A “mutant KRas mediated disease” and the like as used herein, refer to a disease described herein (e.g., a cancer described herein) having symptoms or requiring treatment as set forth herein that is / are wholly or partly associated with, a result of, a function of, or otherwise correlated to mutant KRas activity as described herein. In one such embodiment, the mutant KRas is KRasG12D. The terms “cancer” and “cancerous”, “neoplasm”, and “tumor” and related terms are used interchangeably herein and refer to or describe the physiological condition in mammals that is typically characterized by unregulated cell growth. A “tumor” comprises one or more cancerous cells. Examples of cancer include carcinoma, blastoma, sarcoma, seminoma, glioblastoma, melanoma, leukemia, and myeloid or lymphoid malignancies. More particular examples of such cancers include squamous cell cancer (e.g., epithelial squamous cell cancer) and lung cancer including small-cell lung cancer, non-small cell lung cancer (“NSCLC”), adenocarcinoma of the lung and squamous carcinoma of the lung. Other cancers include skin,keratoacanthoma, follicular carcinoma, hairy cell leukemia, buccal cavity, pharynx (oral), lip, tongue, mouth, salivary gland, esophageal, larynx, hepatocellular, gastric, stomach, gastrointestinal, small intestine, large intestine, pancreatic, cervical, ovarian, liver, bladder, hepatoma, breast, colon, rectal, colorectal, genitourinary, biliary passage, thyroid, papillary, hepatic, endometrial, uterine, salivary gland, kidney or renal, prostate, testis, vulval, peritoneum, anal, penile, bone, multiple myeloma, B-cell lymphoma, diffuse large B-Cell lymphoma (DLBCL), central nervous system, brain, head and neck, Hodgkin’s, and associated metastases. Other examples of neoplastic disorders include myeloproliferative disorders, such as polycythemia vera, essential thrombocytosis, myelofibrosis, such as primary myelofibrosis, and chronic myelogenous leukemia (CML). A “chemotherapeutic agent” as used herein is an agent useful in the treatment of a given disorder, for example, cancer or inflammatory disorders. Examples of chemotherapeutic agents are well-known in the art. Additionally, chemotherapeutic agents include pharmaceutically acceptable salts, acids or derivatives of any of chemotherapeutic agents, as well as combinations of two or more of them. A “subject,” “individual,” or “patient” as used herein is a vertebrate and those terms are used interchangeably herein. In certain embodiments, the vertebrate is a mammal. Mammals include, but are not limited to, farm animals (such as cows), sport animals, pets (such as guinea pigs, cats, dogs, rabbits and horses), primates, mice and rats. In certain embodiments, a mammal is a human. In embodiments comprising administration of a substance to a patient, the patient is typically in need thereof. In one embodiment, a subject is a human having or at risk for cancer. An “effective amount” or “therapeutically effective amount” as used herein is at least the minimum amount required to effect a measurable improvement or prevention of a cancer described herein. An effective amount herein may vary according to factors such as the disease state, age, sex, and weight of the patient, and the ability of the agent to elicit a desired response in the patient. An effective amount is also one in which any toxic or detrimental effects of the treatment are outweighed by the therapeutically beneficial effects. Beneficial or desired results include results such as eliminating or reducing the risk, lessening the severity, delaying the onset of the disease (including biochemical, histological and / or behavioral symptoms of the disease, its complications and intermediate pathological phenotypes presenting during development of the disease), decreasing one or more symptoms resulting from the disease, increasing the quality of life of those suffering from the disease, decreasing the dose of other medications required to treat the disease, enhancing effect of another medication such as via targeting, delaying theprogression of the disease, and / or prolonging survival. In some embodiments, an effective amount of the drug may have the effect in reducing the number of cancer cells; reducing the tumor size; inhibiting (i.e., slow or stop) cancer cell infiltration into peripheral organs; inhibit (i.e., slow or stop) tumor metastasis; inhibiting (i.e., slow or stop) tumor growth; and / or relieving one or more of the symptoms associated with the disorder. An effective amount can be administered in one or more administrations. The terms “treating” and “treatment” as used herein refer to a clinical intervention designed to alter the natural course of the patient or cell being treated during the course of clinical pathology. Desirable effects of treatment include decreasing the rate of disease progression, ameliorating or palliating the disease state, and remission or improved prognosis. For example, a patient is successfully “treated” if one or more symptoms associated with a cancer described herein are mitigated or eliminated, including, but are not limited to, reducing the proliferation of (or destroying) cancerous cells, decreasing symptoms resulting from the disease, increasing the quality of life of those suffering from the disease, decreasing the dose of other medications required to treat the disease, and / or prolonging survival of patients. The term “delaying progression” of a disease as used herein refers to deferring, hindering, slowing, retarding, stabilizing, and / or postponing development of a cancer described herein. This delay can be of varying lengths of time, depending on the history of the cancer and / or patient being treated. As is evident to one skilled in the art, a sufficient or significant delay can, in effect, encompass prevention, in that the patient does not develop cancer or relapse. The terms “inhibiting” and “reducing,” or any variation of these terms, as used herein includes any measurable decrease or complete inhibition to achieve a desired result. For example, there may be a decrease of about, at most about, or at least about 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 99%, or more, or any range derivable therein, reduction of activity compared to normal. The terms “antagonist” and “inhibitor” are used interchangeably herein, and refer to an agent having the ability to inhibit a biological function of a target protein, whether by inhibiting the activity or expression of the protein, such as a mutant form of KRas. Accordingly, the terms “antagonist” and “inhibitors” are defined in the context of the biological role of the target protein. While preferred antagonists herein specifically interact with (e.g., bind to) the target, substances that inhibit a biological activity of the target protein by interacting with other members of the signal transduction pathway of which the target protein is a member are also specifically included within this definition. A preferred biological activity inhibited by an antagonist is associated with the development, growth, or spread of a tumor.The term “package insert” is used to refer to instructions customarily included in commercial packages of therapeutic products, that contain information about the indications, usage, dosage, administration, contraindications and / or warnings concerning the use of such therapeutic products. Disclosed herein are solid forms of a compound of Formula (I) as described herein, pharmaceutical compositions comprising such solid forms and methods of using such solid forms of a compound of Formula (I). Polymorphs and Crystalline Forms The present disclosure provides solid forms of a compound of Formula (I):Compound of Formula (I) may also be known as 2-fluoro-5-((5S,5aS,6S,9R)-1-fluoro- 12-(((2R,7aS)-2-fluorotetrahydro-1H-pyrrolizin-7a(5H)-yl)methoxy)-5-methyl-5a,6,7,8,9,10- hexahydro-5H-4-oxa-3,10a,11,13,14-pentaaza-6,9-methanonaphtho[1,8-ab]heptalen-2-yl)-3- methyl-4-(trifluoromethyl)aniline. In some embodiments, the disclosure provides various polymorphs (i.e., crystalline forms) of a compound of Formula (I). While not intending to be bound by any particular theory, solid forms can be characterized by physical properties such as, for example, stability, solubility and dissolution rate, density, compressibility, hardness, morphology, cleavage, stickiness, solubility, water uptake, electrical properties, thermal behavior, solid-state reactivity, physical stability, and chemical stability) affecting particular processes (e.g., yield, filtration, washing, drying, milling, mixing, tableting, flowability, dissolution, formulation, and lyophilization) which make certain solid forms suitable for the manufacture of a solid dosage form. Such properties can be determined using particular analytical chemical techniques, including solid-state analytical techniques (e.g., X-ray diffraction, microscopy, spectroscopy and thermal analysis). The solid forms described herein can be characterized by a number of methods including, for example, single crystal X-ray diffraction, X-ray powder diffraction (XRPD), microscopy (e.g., scanning electron microscopy (SEM)), thermal analysis (e.g., differential scanning calorimetry (DSC), dynamic vapor sorption (DVS), thermal gravimetric analysis (TGA), and hot-stage microscopy), spectroscopy (e.g., infrared, Raman, and solid-state nuclearmagnetic resonance), high-performance liquid chromatography (HPLC), ultra-high performance liquid chromatography (UHPLC), proton nuclear magnetic resonance, etc. Techniques for characterizing crystal forms include, for example, thermal gravimetric analysis (TGA), differential scanning calorimetry (DSC), X-ray powder diffractometry (XRPD), single-crystal X-ray diffractometry, vibrational spectroscopy, e.g., infrared (IR) and Raman spectroscopy, solid-state and solution nuclear magnetic resonance (NMR) spectroscopy (including1H NMR and F NMR), scanning electron microscopy (SEM), electron crystallography and quantitative analysis, particle size analysis (PSA), surface area analysis, dynamic vapor sorption (DVS) analysis, solubility studies, and dissolution studies. Crystalline forms are commonly characterized by X-ray powder diffraction (XRPD). An XRPD pattern of reflections (peaks, typically expressed in degrees 2-theta) is generally considered a fingerprint of a particular crystalline form. The relative intensities of the XRPD peaks may vary depending on, inter alia, the sample preparation technique, crystal size distribution, filters, the sample mounting procedure, and the particular instrument employed. In some instances, more (i.e., new peaks) or fewer (i.e., peaks may disappear) peaks may be present in the XRPD pattern, depending on the type of instrument or the settings. In some instances, any particular peak in an XRPD pattern may appear as a singlet, doublet, triplet, quartet, or multiplet, depending on the type of instrument or the settings, the sensitivity of the instrument, measuring conditions, and / or purity of the crystalline form. In some instances, any particular peak in an XRPD may appear in a symmetric shape or in an asymmetric shape, e.g., having a shoulder. Moreover, instrument variation and other factors can affect the 2-theta values. A skilled artisan understanding these variations is capable of identifying or ascertaining the defining features or characteristics of a particular crystal form using XRPD, as well as using other known physicochemical techniques. A subset of the full spectrum of XRPD pattern may be unique enough to be characteristic of a specific polymorph. That is, it may be possible to distinguish meaningfully between two or more polymorphs of the same compound by assessing the presence or absence of a few characteristic peaks, such as 3, 4, 5, 6, 7, 8, or more, characteristic peaks. The number and identity of such characteristic peaks will depend on the polymorph. XRPD spectra are typically obtained using a Cu Kα X-ray source (which may also be called Cu Kα wavelength). The purity of the solid forms provided herein can be determined by standard analytical methods, such as thin layer chromatography (TLC), gel electrophoresis, gas chromatography, ultra-high performance liquid chromatography (UHPLC), and mass spectrometry (MS). Anhydrous Crystalline FormsIn some embodiments, the solid form of a compound of Formula (I) is a solid form corresponding to Form J, Form O, Form U, Form AC, Form AG, Form D, Form G, Form N, Form Q, Form AA, Form AK, Form AL, Form A, Form C / S, Form E, Form F, Form H, Form I, Form L, Form M, Form R, Form T, Form V, Form W, Form X, Form Y, Form Z, Form AD, Form AE, Form AH, Form AI, Form AJ, Form AP, Form AQ, Form AR, Form B / AF, Form K, Form AB, Form AM, Form AN, Form AO, Form P, or a mixture thereof. In some embodiments, the solid form of a compound of Formula (I) is Form J. In some embodiments, the solid form of a compound of Formula (I) is Form O. In some embodiments, the solid form of a compound of Formula (I) is Form U. In some embodiments, the solid form of a compound of Formula (I) is Form AC. In some embodiments, the solid form of a compound of Formula (I) is Form AG. In some embodiments, the solid form of a compound of Formula (I) is Form D. In some embodiments, the solid form of a compound of Formula (I) is Form G. In some embodiments, the solid form of a compound of Formula (I) is Form N. In some embodiments, the solid form of a compound of Formula (I) is Form Q. In some embodiments, the solid form of a compound of Formula (I) is Form AA. In some embodiments, the solid form of a compound of Formula (I) is Form AK. In some embodiments, the solid form of a compound of Formula (I) is Form AL. In some embodiments, the solid form of a compound of Formula (I) is Form A. In some embodiments, the solid form of a compound of Formula (I) is Form C / S. In some embodiments, the solid form of a compound of Formula (I) is Form E. In some embodiments, the solid form of a compound of Formula (I) is Form F. In some embodiments, the solid form of a compound of Formula (I) is Form H. In some embodiments, the solid form of a compound of Formula (I) is Form I. In some embodiments, the solid form of a compound of Formula (I) is Form L. In some embodiments, the solid form of a compound of Formula (I) is Form M. In some embodiments, the solid form of a compound of Formula (I) is Form R. In some embodiments, the solid form of a compound of Formula (I) is Form T. In some embodiments, the solid form of a compound of Formula (I) is Form V. In some embodiments, the solid form of a compound of Formula (I) is Form W. In some embodiments, the solid form of a compound of Formula (I) is Form X. In some embodiments, the solid form of a compound of Formula (I) is Form Y. In some embodiments, the solid form of a compound of Formula (I) is Form Z. In some embodiments, the solid form of a compound of Formula (I) is Form AD. In some embodiments, the solid form of a compound of Formula (I) is Form AE. In some embodiments, the solid form of a compound of Formula (I) is Form AH. In some embodiments, the solid form of a compound of Formula (I) is Form AI. In some embodiments, the solid form of a compound of Formula (I) is Form AJ. In some embodiments, the solid form of a compoundof Formula (I) is Form AP. In some embodiments, the solid form of a compound of Formula (I) is Form AQ. In some embodiments, the solid form of a compound of Formula (I) is Form AR. In some embodiments, the solid form of a compound of Formula (I) is Form B / AF. In some embodiments, the solid form of a compound of Formula (I) is Form K. In some embodiments, the solid form of a compound of Formula (I) is Form AB. In some embodiments, the solid form of a compound of Formula (I) is Form AM. In some embodiments, the solid form of a compound of Formula (I) is Form AN. In some embodiments, the solid form of a compound of Formula (I) is Form AO. In some embodiments, the solid form of a compound of Formula (I) is Form P. In some embodiments, the solid form of a compound of Formula (I) is a mixture of any of two or more of the foregoing forms. In some embodiments, the solid form is an anhydrous crystalline form (i.e., anhydrate). In some embodiments, the anhydrous crystalline form is Form J, Form O, Form U, Form AC, or Form AG described herein. In some embodiments, the anhydrous crystalline form is Form J. In some embodiments, the anhydrous crystalline form is Form O. In some embodiments, the anhydrous crystalline form is Form U. In some embodiments, the anhydrous crystalline form is Form AC. In some embodiments, the anhydrous crystalline form is Form AG. Form J In some embodiments, the compound of Formula (I) is the solid form, Form J. In some embodiments, the compound of Formula (I) is an anhydrous crystalline form, Form J. In some embodiments, the anhydrous crystalline form is Form J characterized by an XRPD pattern substantially as set forth in Figure 1. In some embodiments, Form J is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 1. In some embodiments, Form J is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 1. Representative XRPD peaks for Form J are: Table 1In some embodiments, provided herein is a solid form of the compound of Formula (I), wherein the solid form is Form J. In some embodiments, the solid form is characterized by an XRPD diffraction pattern comprising at least two XRPD peaks selected from the group consisting of approximately 16.4 ± 0.2, 6.8 ± 0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.42 ±0.2, 13.7 ±0.2, 8.8 ±0.2, and 19.7 ±0.2 degrees 2θ. In some embodiments, the solid form is characterized by an XRPD diffraction pattern comprising at least three XRPD peaks selected from the group consisting of about 16.4 ±0.2, 6.8 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ± 0.2, 8.4 ±0.2, 13.7 ±0.2, 8.8 ±0.2, and 19.7 ±0.2 degrees 2θ. In some embodiments, the solid form is characterized by an XRPD diffraction pattern comprising at least four XRPD peaks selected from the group consisting of about 16.4 ±0.2, 6.8 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.4 ±0.2, 13.7 ±0.2, 8.8 ±0.2, and 19.7 ±0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the anhydrous crystalline form is Form J characterized by a TGA thermogram showing about 2.6% weight loss up to 180 °C. In some embodiments, the anhydrous crystalline form is Form J characterized by a DSC thermogram comprising at least one endothermic peak at about 110 °C, about 138 °C, or about 178 °C. In some embodiments, the anhydrous crystalline form is Form J characterized by a DSC thermogram comprising endothermic peaks at about 110 °C, about 138 °C, and about 178 °C. In some embodiments, the anhydrous crystalline form is Form J characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 1; b. a TGA thermogram showing about 2.6% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 110 °C, about 138 °C, or about 178 °C. In some embodiments, the anhydrous crystalline form is Form J characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 1; b. a TGA thermogram showing about 2.6% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 110 °C, about 138 °C, and about 178 °C. In some embodiments, the anhydrous crystalline form is Form J described herein. In some embodiments, Form J is pure. In some embodiments, Form J is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form J is no less than about 95%, no less than about 96%, no less than about 97%, noless than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form O In some embodiments, the anhydrous crystalline form is Form O characterized by an XRPD pattern substantially as set forth in Figure 2. In some embodiments, Form O is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 2. In some embodiments, Form O is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 2. Representative XRPD peaks of Form O are: Table 2In some embodiments, provided herein is a solid form of the compound of Formula (I), wherein the solid form is Form O. In some embodiments, the solid form, Form O is characterized by an XRPD diffraction pattern comprising at least two XRPD peaks selected from the group consisting of approximately 15.1 ±0.2, 19.7 ±0.2, 9.3 ±0.2, 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2, and 15.9 ±0.2 degrees 2θ. In some embodiments, Form O is characterized by an XRPD diffraction pattern comprising at least one peak selected from the group consisting of approximately 15.1 ±0.2, 19.7 ±0.2, and 9.3 ±0.2 degrees 2θ; and at least one, at least two, at least three, at least four, or at least five additional peaks selected from the group consisting of approximately 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2, and 15.9 ±0.2 degrees 2θ. In some embodiments, Form O is characterized by an XRPD diffraction pattern comprising XRPD peaks at approximately 15.1 ±0.2, 19.7 ±0.2, and 9.3 ±0.2 degrees 2θ; and at least three additional peaks selected from the group consisting of approximately 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2, and 15.9 ±0.2degrees 2θ. In some embodiments, Form O is characterized by an XRPD diffraction pattern comprising XRPD peaks at approximately 15.1 ±0.2, 19.7 ±0.2, 9.3 ±0.2, 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2, and 15.9 ±0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the anhydrous crystalline form is Form O characterized by a TGA thermogram showing about 3.1% weight loss up to 180 °C. In some embodiments, the anhydrous crystalline form is Form O characterized by a DSC thermogram comprising at least one endothermic peak at about 70 °C or about 195 °C. In some embodiments, the anhydrous crystalline form is Form O characterized by a DSC thermogram comprising endothermic peaks at about 70 °C and about 195 °C. In some embodiments, the anhydrous crystalline form is Form O characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 2; b. a TGA thermogram showing about 3.1% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 70 °C or about 195 °C. In some embodiments, the anhydrous crystalline form is Form O characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 2; b. a TGA thermogram showing about 3.1% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 70 °C and about 195 °C. In some embodiments, the anhydrous crystalline form is Form O described herein. In some embodiments, Form O is pure. In some embodiments, Form O is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form O is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form U In some embodiments, the anhydrous crystalline form is Form U is characterized by an XRPD pattern substantially as set forth in Figure 3. In some embodiments, Form U is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 3. In some embodiments, Form U is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 3. Representative XRPD peaks for Form U are: Table 3In some embodiments, provided herein is a solid form of the compound of Formula (I), wherein the solid form is Form U. In some embodiments, the solid form, Form U is characterized by an XRPD diffraction pattern comprising at least two XRPD peaks selected from the group consisting of approximately 18.1 ±0.2 degrees, 5.9 ±0.2 degrees, 18.7 ±0.2 degrees, 19.2 ±0.2 degrees, 17.6 ±0.2 degrees, 22.0 ±0.2 degrees, 20.4 ±0.2 degrees, 15.8 ±0.2 degrees, 17.3 ±0.2 degrees, and 15.1 ±0.2 degrees 2θ. In some embodiments, the solid form, Form U is characterized by an XRPD diffraction pattern comprising at least three, at least four, at least five, at least six, at least seven, at least eight, or at least nine XRPD peaks selected from the group consisting of approximately 18.1 ±0.2 degrees, 5.9 ±0.2 degrees, 18.7 ±0.2 degrees, 19.2 ±0.2 degrees, 17.6 ±0.2 degrees, 22.0 ±0.2 degrees, 20.4 ±0.2 degrees, 15.8 ±0.2 degrees, 17.3 ±0.2 degrees, and 15.1 ±0.2 degrees 2θ. In some embodiments, the solid form Form U is characterized by an XRPD diffraction pattern comprising at least one peak selected from approximately 18.1 ±0.2 degrees, 5.9 ±0.2 degrees, and 18.7 ±0.2 degrees 2θ; and at least two, at least three, at least four, or at least five peaks selected from approximately 19.2 ±0.2 degrees, 17.6 ±0.2 degrees, 22.0 ±0.2 degrees, 20.4 ±0.2 degrees, 15.8 ±0.2 degrees, 17.3 ±0.2 degrees, and 15.1 ±0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the anhydrous crystalline form is Form U characterized by a TGA thermogram showing about 1.3% weight loss up to 190 °C. In some embodiments, the anhydrous crystalline form is Form U characterized by a DSC thermogram comprising an endothermic peak at about 205 °C. In some embodiments, the anhydrous crystalline form is Form U characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 3; b. a TGA thermogram showing about 1.3% weight loss up to 190 °C; and c. a DSC thermogram comprising an endothermic peak at about 205 °C. In some embodiments, the anhydrous crystalline form is Form U described herein. In some embodiments, Form U is pure. In some embodiments, Form U is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, thepurity of Form U is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form AC In some embodiments, the anhydrous crystalline form is Form AC characterized by an XRPD pattern substantially as set forth in Figure 4. In some embodiments, Form AC is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 4. In some embodiments, Form AC is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 4. Representative XRPD peaks for Form AC are: Table 4In some embodiments, provided herein is a solid form of the compound of Formula (I), wherein the solid form is Form AC. In some embodiments, the solid form, Form AC is characterized by an XRPD diffraction pattern comprising at least two XRPD peaks selected from the group consisting of approximately 6.0 ±0.2 degrees, 20.2 ±0.2 degrees, 15.6 ±0.2 degrees, 16.8 ±0.2 degrees, 23.4 ±0.2 degrees, 15.0 ±0.2 degrees, 19.2 ±0.2 degrees, 16.3 ±0.2 degrees, 23.6 ±0.2 degrees, and 22.9 ±0.2 degrees 2θ. In some embodiments, the solid form Form AC is characterized by an XRPD diffraction pattern comprising at least three, at least four, at least five, at least six, at least seven, at least eight, or at least nine XRPD peaks selected from the group consisting of approximately 6.0 ±0.2 degrees, 20.2 ±0.2 degrees, 15.6 ±0.2 degrees, 16.8 ±0.2 degrees, 23.4 ±0.2 degrees, 15.0 ±0.2 degrees, 19.2 ±0.2 degrees, 16.3 ±0.2 degrees, 23.6 ±0.2 degrees, and 22.9 ±0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source.In some embodiments, the anhydrous crystalline form is Form AC characterized by a TGA thermogram showing about 2.3% weight loss up to 160 °C. In some embodiments, the anhydrous crystalline form is Form AC characterized by a DSC thermogram comprising an endothermic peak at about 163 °C. In some embodiments, the anhydrous crystalline form is Form AC is characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 4; b. a TGA thermogram showing about 2.3% weight loss up to 160 °C; and c. a DSC thermogram comprising an endothermic peak at about 163 °C. In some embodiments, the anhydrous crystalline form is Form AC described herein. In some embodiments, Form AC is pure. In some embodiments, Form AC is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form AC is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form AG In some embodiments, the anhydrous crystalline form is Form AG characterized by an XRPD pattern comprising characteristic peaks at approximately 19.3 ± 0.2, 13.1 ± 0.2, and 15.4 ± 0.2 degrees 2θ. In some embodiments, the XRPD pattern further comprises at least one additional characteristic peak selected from the group consisting of: approximately 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. In some embodiments, the XRPD pattern further comprises characteristic peaks at approximately 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. In some embodiments, the anhydrous crystalline form is AG characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, eleven, twelve, thirteen, fourteen or fifteen characteristic XRPD peaks as set forth in Table 39. In some embodiments, the anhydrous crystalline form is Form AG characterized by an XRPD pattern comprising at least 15 characteristic peaks as set forth in Table 39. In some embodiments, the anhydrous crystalline form is Form AG characterized by an XRPD pattern substantially as set forth in Figure 5A. In some embodiments, the anhydrous crystalline form is AG characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, eleven, twelve, thirteen, fourteen or fifteen characteristic XRPD peaks as set forth in Figure 5A. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, Form AG is characterized by an XRPD pattern comprising has one, two, three, four, five six,seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 6. A further set of representative XRPD peaks for Form AG are: Table 6In some embodiments, the form is Form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 degrees 2θ, and at least two peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. In some embodiments, the form is Form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 degrees 2θ, and at least three peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. In some embodiments, the form is Form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 degrees 2θ, and at least four peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. In some embodiments, the form is Form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 degrees 2θ, and at least five, at least six, at least seven, or at least eight peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. In some embodiments, the form is Form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 degrees 2θ and a peak at approximately 19.3 ± 0.2 degrees 2θ, and at least one peak selected from the group consisting of 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. In some embodiments, the form is Form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 degrees 2θ and a peak at approximately 19.3 ± 0.2 degrees 2θ, and at least two peaks selected from the group consisting of 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. In some embodiments, the form is Form AGcharacterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 degrees 2θ and a peak at approximately 19.3 ± 0.2 degrees 2θ, and at least three peaks selected from the group consisting of 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. In some embodiments, the form is Form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 degrees 2θ and a peak at approximately 19.3 ± 0.2 degrees 2θ, and at least four, at least five, at least six, or at least seven peaks selected from the group consisting of 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. In still further embodiments, the form is Form AG characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 13.1 ± 0.2, 19.3 ± 0.2, and 15.4 ± 0.2 degrees 2θ; and at least one peak selected from the group consisting of 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. In yet further embodiments, the form is Form AG characterized by an XRPD pattern comprising peaks at approximately 13.1 ± 0.2, 19.3 ± 0.2, and 15.4 ± 0.2 degrees 2θ; and at least one peak selected from the group consisting of 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. In some embodiments, the form is Form AG characterized by an XRPD pattern comprising peaks at approximately 13.1 ± 0.2, 19.3 ± 0.2, and 15.4 ± 0.2 degrees 2θ; and at least two, at least three, at least four, or at least five peaks selected from the group consisting of 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the form is Form AG characterized by an XRPD pattern comprising peaks at approximately 13.1 ± 0.2, 19.3 ± 0.2, 15.4 ± 0.2 degrees 2θ, and 18.5 ± 0.2 degrees 2θ. In some embodiments, the XRPD pattern further comprises one or more peaks at approximately 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, or 10.7 ± 0.2 degrees 2θ. In some embodiments, the XRPD pattern further comprises two, three, or four additional peaks selected from the group consisting of 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, or 10.7 ± 0.2 degrees 2θ. In some embodiments, Form AG is also characterized by a < 1% w / w weight loss by thermogravimetry up to 150 °C. In certain embodiments, Form AG is also characterized by a < 2% w / w weight loss by thermogravimetry up to 180 °C. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the anhydrous crystalline form is Form AG characterized by a TGA thermogram showing about 1.1% weight loss up to 180 °C. In some embodiments, the anhydrous crystalline form is Form AG characterized by a TGA thermogram substantially as setforth in Figure 5B. In some embodiments, the form of the compound of Formula (I) is Form AG characterized by a TGA thermogram showing less than 2% weight loss up to 180 °C. In still further embodiments, the form of the compound of Formula (I)is Form AG characterized by a < 1% w / w weight loss by thermogravimetry up to 150 °C. In some embodiments, the anhydrous crystalline form is Form AG characterized by a DSC thermogram comprising an endothermic peak at about 219 °C. In some embodiments, the anhydrous crystalline form is Form AG characterized by a DSC thermogram substantially as set forth in Figure 5B. In some embodiments, the anhydrous crystalline form is Form AG is characterized by a dynamic vapor sorption (DVS) plot substantially as set forth in Figure 5C. In some embodiments, the anhydrous crystalline form is Form AG characterized by a scanning electron microscopy (SEM) micrograph substantially as set forth in Figure 5D. In some embodiments, the anhydrous crystalline form is Form AG characterized by two or more of: a. an XRPD pattern comprising characteristic peaks at approximately 19.3 ± 0.2, 13.1 ± 0.2, and 15.4 ± 0.2 degrees 2θ; b. a TGA thermogram showing about 1.1% weight loss at 180 °C; c. a DSC thermogram comprising an endothermic peak at about 219 °C; d. a dynamic vapor sorption (DVS) plot substantially as set forth in Figure 5C; and e. a scanning electron microscopy (SEM) micrograph substantially as set forth in Figure 5D. In some embodiments, the anhydrous crystalline form is Form AG characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 5A; b. a TGA thermogram substantially as set forth in Figure 5B; c. a DSC thermogram substantially as set forth in Figure 5B; d. a DVS plot substantially as set forth in Figure 5C; and e. a SEM micrograph substantially as set forth in Figure 5D. In some embodiments, the anhydrous crystalline form is Form AG described herein. In some embodiments, Form AG is pure. In some embodiments, Form AG is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form AG is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. In some embodiments, Form AG comprises less than 5% by weight, less than 4% by weight, less than 3% by weight, less than 2% by weight, less than 1% by weight, less than 0.5% by weight, or less than 0.1% by weight, of another form of a compound of Formula (I). In some embodiments, the other form of a compound of Formula (I) is an amorphous form of a compound of Formula (I). In some embodiments, Form AG comprises less than 5% by weight of an amorphous form of a compound of Formula (I). In someembodiments, Form AG comprises less than 1% by weight of an amorphous form of a compound of Formula (I). In some embodiments, Form AG is a white to off-white solid. Provided further herein are methods of producing Form AG, comprising combining a compound of Formula (I) with a solvent comprising a C1-C6 alcohol; and crystallizing a compound of Formula (I) from the combination, wherein the crystalline a compound of Formula (I) is Form AG. In some embodiments, a compound of Formula (I) is combined with the solvent to form a solution, that is, a liquid mixture substantially free of solids. Such combination may be heated, for example to between 30°C and 50°C, or about 35°C to 45°C, or about 40°C. In some embodiments, the solution is seeded with a slurry of seed crystals of Form AG, which may be produced by methods provided herein; in other embodiments, the solution is not seeded. In some embodiments, the solvent comprises ethanol, or methanol, or propanol. In some embodiments, crystallization comprises then adding a second solvent in which a compound of Formula (I) is less soluble, in order to from crystals. In some embodiments, the second solvent comprises a nonpolar solvent, such as a C3-C10alkane. In some embodiments, the second solvent is pentane, hexane, or heptane. Without wishing to be bound by any theory, such nonpolar solvent may be useful in reducing the solubility of a compound of Formula (I) in the alcohol, improving crystallization yield. In some embodiments, the crystallization comprises forming a solution of a compound of Formula (I) in a solvent comprising C1-C6alcohol, such as at least 80%, at least 90%, at least 95%, or at least 99% of a C1-C6 alcohol, such as propanol, ethanol, or methanol; heating the solution to between 30°C and 50°C, or about 35°C to 45°C, or about 40°C; optionally adding a slurry of seed crystals of Form AG; and adding a second solvent comprising a C3-C10alkane the solution to product Form AG, wherein the second solvent is hexane or heptane. In some embodiments, the second solvent is at least 80%, at least 90%, at least 95%, or at least 99% C3-C10alkane, such as hexane or heptane. In some embodiments, the second solvent is added such that the final ratio of first solvent and second solvent is about 1:2 to 1:6, or about 1:3 to 1:5, or about 1:4. In some embodiments, the method further comprises cooling the mixture, such as cooling to between 15°C to 35°C, or 20°C to 30°C, or 20°C to 25°C, or about 23°C. In some embodiments, the solids are isolated, washed, and dried, to produce Form AG with purity of at least 90%, at least 95%, or at least 98%. Hydrated Crystalline Forms In some embodiments, the solid form is a hydrated crystalline form (i.e., hydrate). In some embodiments, the hydrated crystalline form is Form D, Form G, Form N, Form Q, Form AA, Form AK, or Form AL described herein. In some embodiments, the hydrated crystallineform is Form D. In some embodiments, the hydrated crystalline form is Form G. In some embodiments, the hydrated crystalline form is Form N. In some embodiments, the hydrated crystalline form is Form Q. In some embodiments, the hydrated crystalline form is Form AA. In some embodiments, the hydrated crystalline form is Form AK. In some embodiments, the hydrated crystalline form is Form AL. Form D In some embodiments, the hydrated crystalline form is Form D characterized by an XRPD pattern substantially as set forth in Figure 6. In some embodiments, Form D is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 6. In some embodiments, Form D is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 7. Representative XRPD peaks for Form D are: Table 7In some embodiments, the form is Form D characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 8.7 ± 0.2, 7.5 ± 0.2, 8.2 ± 0.2, 17.6 ± 0.2, 15.2 ± 0.2, 19.1 ± 0.2, 19.8 ± 0.2, 15.5 ± 0.2, 11.9 ± 0.2, and 14.3 ± 0.2 degrees 2θ. In some embodiments, the form is Form D characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, at least seven, or at least 8 peaks selected from the group consisting of approximately 8.7 ± 0.2, 7.5 ± 0.2, 8.2 ± 0.2, 17.6 ± 0.2, 15.2 ± 0.2, 19.1 ± 0.2, 19.8 ± 0.2, 15.5 ± 0.2, 11.9 ± 0.2, and 14.3 ± 0.2 degrees 2θ. In some embodiments, the form is Form D characterized by an XRPD pattern comprising at least one peak selected from the group consisting of approximately 8.7 ± 0.2, 7.5 ± 0.2, and 8.2 ± 0.2 degrees 2θ; and at least one, at least two, at least three, at least four, or at least five peaks selected from the group consisting of approximately 17.6 ± 0.2, 15.2 ± 0.2, 19.1 ± 0.2, 19.8 ±0.2, 15.5 ± 0.2, 11.9 ± 0.2, and 14.3 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the hydrated crystalline form is Form D characterized by a TGA thermogram showing about 4.0% weight loss up to 180 °C. In some embodiments, the hydrated crystalline form is Form D characterized by a DSC thermogram comprising at least one endothermic peak at about 80 °C or about 159 °C. In some embodiments, the hydrated crystalline form is Form D characterized by a DSC thermogram comprising endothermic peaks at about 80 °C and about 159 °C. In some embodiments, the hydrated crystalline form is Form D characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 6; b. a TGA thermogram showing about 4.0% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 80 °C or about 159 °C. In some embodiments, the hydrated crystalline form is Form D characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 6; b. a TGA thermogram showing about 4.0% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 80 °C and about 159 °C. In some embodiments, the hydrated crystalline form is Form D described herein. In some embodiments, Form D is pure. In some embodiments, Form D is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form D is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form G In some embodiments, the hydrated crystalline form is Form G characterized by an XRPD pattern substantially as set forth in Figure 7. In some embodiments, Form G is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 7. In some embodiments, Form G is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 8. Representative XRPD peaks for Form G are: Table 8In some embodiments, the form is Form G characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 5.9 ± 0.2, 16.5 ± 0.2, 11.8 ± 0.2, 6.5 ± 0.2, 22.2 ± 0.2, 21.1 ± 0.2, 17.7 ± 0.2, 27.5 ± 0.2, 15.8 ± 0.2, and 13.0 ± 0.2 degrees 2θ. In some embodiments, the form is Form G characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, at least seven, or at least eight peaks selected from the group consisting of approximately 5.9 ± 0.2, 16.5 ± 0.2, 11.8 ± 0.2, 6.5 ± 0.2, 22.2 ± 0.2, 21.1 ± 0.2, 17.7 ± 0.2, 27.5 ± 0.2, 15.8 ± 0.2, and 13.0 ± 0.2 degrees 2θ. In some embodiments, the form is Form G characterized by an XRPD pattern comprising at least one peak selected from the group consisting of approximately 5.9 ± 0.2, 16.5 ± 0.2, and 11.8 ± 0.2 degrees 2θ; and at least one peak selected from the group consisting of approximately 6.5 ± 0.2, 22.2 ± 0.2, 21.1 ± 0.2, 17.7 ± 0.2, 27.5 ± 0.2, 15.8 ± 0.2, and 13.0 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the hydrated crystalline form is Form G characterized by a TGA thermogram showing about 5.4% weight loss up to 180 °C. In some embodiments, the hydrated crystalline form is Form G characterized by a DSC thermogram comprising at least one endothermic peak at about 83 °C, about 167 °C, or about 192 °C. In some embodiments, the hydrated crystalline form is Form G characterized by a DSC thermogram comprising endothermic peaks at about 83 °C, about 167 °C, and about 192 °C. In some embodiments, the hydrated crystalline form is Form G characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 7; b. a TGA thermogram showing about 5.4% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 83 °C, about 167 °C, or about 192 °C. In some embodiments, the hydrated crystalline form is Form G characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 7; b. a TGA thermogram showing about 5.4% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 83 °C, about 167 °C, and about 192 °C. In some embodiments, the hydrated crystalline form is Form G described herein. In some embodiments, Form G is pure. In some embodiments, Form G is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, thepurity of Form G is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form N In some embodiments, the hydrated crystalline form is Form N characterized by an XRPD pattern substantially as set forth in Figure 8. In some embodiments, Form N is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 8. In some embodiments, Form N is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 9. Representative XRPD peaks for Form N are: Table 9In some embodiments, the form is Form N characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 15.7 ± 0.2, 16.1 ± 0.2, 15.5 ± 0.2, 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2, and 6.6 ± 0.2 degrees 2θ. In some embodiments, the form is Form N characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 15.7 ± 0.2, 16.1 ± 0.2, 15.5 ± 0.2, 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2, and 6.6 ± 0.2 degrees 2θ. In some embodiments, the form is Form N characterized by an XRPD pattern comprising at least one peak selected from the group consisting of approximately 15.7 ± 0.2, 16.1 ± 0.2, and 15.5 ± 0.2 degrees 2θ; at least one, at least two, at least three, or at least four peaks selected from the group consisting of approximately 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2, and 6.6 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source.In some embodiments, the hydrated crystalline form is Form N characterized by a TGA thermogram showing about 3.9% weight loss up to 180 °C. In some embodiments, the hydrated crystalline form is Form N characterized by a DSC thermogram comprising at least one endothermic peak at about 60 °C, about 131 °C, or about 172 °C. In some embodiments, the hydrated crystalline form is Form N characterized by a DSC thermogram comprising endothermic peaks at about 60 °C, about 131 °C, and about 172 °C. In some embodiments, the hydrated crystalline form is Form N characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 8; b. a TGA thermogram showing about 3.9% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 60 °C, about 131 °C, or about 172 °C. In some embodiments, the hydrated crystalline form is Form N characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 8; b. a TGA thermogram showing about 3.9% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 60 °C, about 131 °C, and about 172 °C. In some embodiments, the hydrated crystalline form is Form N described herein. In some embodiments, Form N is pure. In some embodiments, Form N is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form N is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form Q In some embodiments, the hydrated crystalline form is Form Q characterized by an XRPD pattern substantially as set forth in Figure 9. In some embodiments, Form Q is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 9. In some embodiments, Form Q is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 10. Representative XRPD peaks for Form Q are: Table 10In some embodiments, the form is Form Q characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 8.5 ± 0.2, 6.2 ± 0.2, 17.0 ± 0.2, 17.9 ± 0.2, 19.2 ± 0.2, 17.6 ± 0.2, 18.6 ± 0.2, 20.6 ± 0.2, 16.5 ± 0.2, and 20.9 ± 0.2 degrees 2θ. In some embodiments, the form is Form Q characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 8.5 ± 0.2, 6.2 ± 0.2, 17.0 ± 0.2, 17.9 ± 0.2, 19.2 ± 0.2, 17.6 ± 0.2, 18.6 ± 0.2, 20.6 ± 0.2, 16.5 ± 0.2, and 20.9 ± 0.2 degrees 2θ. In some embodiments, the form is Form Q characterized by an XRPD pattern comprising at least one peak selected from the group consisting of approximately 8.5 ± 0.2, 6.2 ± 0.2, and 17.0 ± 0.2 degrees 2θ; and at least one, at least two, at least three, at least four, or at least five peaks selected from the group consisting of approximately 17.9 ± 0.2, 19.2 ± 0.2, 17.6 ± 0.2, 18.6 ± 0.2, 20.6 ± 0.2, 16.5 ± 0.2, and 20.9 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the hydrated crystalline form is Form Q characterized by a TGA thermogram showing about 4.9% weight loss up to 180 °C. In some embodiments, the hydrated crystalline form is Form Q characterized by a DSC thermogram comprising at least one endothermic peak at about 96 °C or about 155 °C. In some embodiments, the hydrated crystalline form is Form Q characterized by a DSC thermogram comprising endothermic peaks at about 96 °C and about 155 °C. In some embodiments, the hydrated crystalline form is Form Q characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 9; b. a TGA thermogram showing about 4.9% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 96 °C or about 155 °C. In some embodiments, the hydrated crystalline form is Form Q characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 9; b. a TGA thermogram showing about 4.9% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 96 °C and about 155 °C. In some embodiments, the hydrated crystalline form is Form Q described herein. In some embodiments, Form Q is pure. In some embodiments, Form Q is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form Q is no less than about 95%, no less than about 96%, no less than about 97%, noless than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form AA In some embodiments, the hydrated crystalline form is Form AA characterized by an XRPD pattern substantially as set forth in Figure 10. In some embodiments, the hydrated crystalline form is Form AA described herein. In some embodiments, Form AA is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 10. In some embodiments, Form AA is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 11. Representative XRPD peaks for Form AA are: Table 11In some embodiments, the form is Form AA characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 6.8 ± 0.2, 16.9 ± 0.2, 9.1 ± 0.2, 16.0 ± 0.2, 7.7 ± 0.2, 8.4 ± 0.2, 15.7 ± 0.2, 18.7 ± 0.2, 19.7 ± 0.2, and 13.2 ± 0.2 degrees 2θ. In some embodiments, the form is Form AA characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 6.8 ± 0.2, 16.9 ± 0.2, 9.1 ± 0.2, 16.0 ± 0.2, 7.7 ± 0.2, 8.4 ± 0.2, 15.7 ± 0.2, 18.7 ± 0.2, 19.7 ± 0.2, and 13.2 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, Form AA is pure. In some embodiments, Form AA is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form AA is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%.Form AK In some embodiments, the hydrated crystalline form is Form AK characterized by an XRPD pattern substantially as set forth in Figure 11. In some embodiments, Form AK is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 11. In some embodiments, Form AK is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 12. Representative XRPD peaks for Form AK are: Table 12In some embodiments, the form is Form AK characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 14.6 ± 0.2, 16.8 ± 0.2, 20.3 ± 0.2, 16.4 ± 0.2, 14.3 ± 0.2, 7.7 ± 0.2, 19.1 ± 0.2, 17.1 ± 0.2, 10.5 ± 0.2, and 15.4 ± 0.2 degrees 2θ. In some embodiments, the form is Form AK characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 14.6 ± 0.2, 16.8 ± 0.2, 20.3 ± 0.2, 16.4 ± 0.2, 14.3 ± 0.2, 7.7 ± 0.2, 19.1 ± 0.2, 17.1 ± 0.2, 10.5 ± 0.2, and 15.4 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the hydrated crystalline form is Form AK characterized by a TGA thermogram showing about 7.2% weight loss up to 180 °C. In some embodiments, the hydrated crystalline form is Form AK characterized by a DSC thermogram comprising at least one endothermic peak at about 49 °C, about 117 °C, or about 157 °C. In some embodiments, the hydrated crystalline form is Form AK characterized by a DSC thermogram comprising endothermic peaks at about 49 °C, about 117 °C, and about 157 °C. In some embodiments, the hydrated crystalline form is Form AK characterized by two ormore of: a. an XRPD pattern substantially as set forth in Figure 11; b. a TGA thermogram showing about 7.2% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 49 °C, about 117 °C, or about 157 °C. In some embodiments, the hydrated crystalline form is Form AK characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 11; b. a TGA thermogram showing about 7.2% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 49 °C, about 117 °C, and about 157 °C. In some embodiments, the hydrated crystalline form is Form AK described herein. In some embodiments, Form AK is pure. In some embodiments, Form AK is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form AK is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form AL In some embodiments, the hydrated crystalline form is Form AL characterized by an XRPD pattern substantially as set forth in Figure 12. In some embodiments, Form AL is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 12. In some embodiments, Form AL is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 13. Representative XRPD peaks for Form AL are: Table 13In some embodiments, the form is Form AL characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 6.2 ± 0.2, 18.5 ± 0.2, 6.6 ± 0.2, 16.7 ± 0.2, 13.8 ± 0.2, 16.0 ± 0.2, 21.0 ± 0.2, 22.3 ± 0.2, 17.5 ± 0.2, and12.3 ± 0.2 degrees 2θ. In some embodiments, the form is Form AL characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 6.2 ± 0.2, 18.5 ± 0.2, 6.6 ± 0.2, 16.7 ± 0.2, 13.8 ± 0.2, 16.0 ± 0.2, 21.0 ± 0.2, 22.3 ± 0.2, 17.5 ± 0.2, and 12.3 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the hydrated crystalline form is Form AL characterized by a TGA thermogram showing about 7.6% weight loss up to 180 °C. In some embodiments, the hydrated crystalline form is Form AL characterized by a DSC thermogram comprising at least one endothermic peak at about 99 °C, about 146 °C, or about 159 °C. In some embodiments, the hydrated crystalline form is Form AL characterized by a DSC thermogram comprising endothermic peaks at about 99 °C, about 146 °C, and about 159 °C. In some embodiments, the hydrated crystalline form is Form AL characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 12; b. a TGA thermogram showing about 7.6% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 99 °C, about 146 °C, or about 159 °C. In some embodiments, the hydrated crystalline form is Form AL characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 12; b. a TGA thermogram showing about 7.6% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 99 °C, about 146 °C, and about 159 °C. In some embodiments, the hydrated crystalline form is Form AL described herein. In some embodiments, Form AL is pure. In some embodiments, Form AL is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form AL is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Solvated Crystalline Forms In some embodiments, the solid form is a solvated crystalline form (i.e., solvate). In some embodiments, the solvated crystalline form is a 2-methyl-tetrahydrofuran (2-MeTHF), acetonitrile (ACN), tetrahydrofuran (THF), dimethylformamide (DMF), 1,4-dixoane, dimethylacetamide (DMAc), isopropanol (IPA), methyl tert-butyl ether (MTBE), ethyl acetate (EtOAc), acetone, isopropyl acetate (IPAc), chloroform (CHCl3), dichloromethane (DCM), cyclopentyl methyl ether (CPME), anisole, diisopropyl ether, toluene, N-methyl-2-pyrrolidone (NMP), dimethyl sulfoxide (DMSO), 1,2-propanediol, 1,2-dimethoxyethane, or 2-tertbutoxyethanol solvate. In some embodiments, the solvated crystalline form is Form A, Form C / S, Form E, Form F, Form H, Form I, Form L, Form M, Form R, Form T, Form V, Form W, Form X, Form Y, Form Z, Form AD, Form AE, Form AH, Form AI, Form AJ, Form AP, Form AQ, or Form AR described herein. In some embodiments, the solvated crystalline form is Form A. In some embodiments, the solvated crystalline form is Form C / S. In some embodiments, the solvated crystalline form is Form E. In some embodiments, the solvated crystalline form is Form F. In some embodiments, the solvated crystalline form is Form H. In some embodiments, the solvated crystalline form is Form I. In some embodiments, the solvated crystalline form is Form L. In some embodiments, the solvated crystalline form is Form M. In some embodiments, the solvated crystalline form is Form R. In some embodiments, the solvated crystalline form is Form T. In some embodiments, the solvated crystalline form is Form V. In some embodiments, the solvated crystalline form is Form W. In some embodiments, the solvated crystalline form is Form X. In some embodiments, the solvated crystalline form is Form Y. In some embodiments, the solvated crystalline form is Form Z. In some embodiments, the solvated crystalline form is Form AD. In some embodiments, the solvated crystalline form is Form AE. In some embodiments, the solvated crystalline form is Form AH. In some embodiments, the solvated crystalline form is Form AI. In some embodiments, the solvated crystalline form is Form AJ. In some embodiments, the solvated crystalline form is Form AP. In some embodiments, the solvated crystalline form is Form AQ. In some embodiments, the solvated crystalline form is Form AR. Form A In some embodiments, the solvated crystalline form is a 2-MeTHF solvate. In some embodiments, the 2-MeTHF solvate is Form A. In some embodiments, the solvated crystalline form is Form A characterized by an XRPD pattern substantially as set forth in Figure 13. In some embodiments, Form A is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 13. In some embodiments, Form A is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 14. Representative XRPD peaks for Form A are: Table 14In some embodiments, the form is Form A characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 6.0 ± 0.2, 18.3 ± 0.2, 9.3 ± 0.2, 20.6 ± 0.2, 15.6 ± 0.2, 17.1 ± 0.2, 8.9 ± 0.2, 14.9 ± 0.2, and 17.4 ± 0.2 degrees 2θ. In some embodiments, the form is Form A characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 6.0 ± 0.2, 18.3 ± 0.2, 9.3 ± 0.2, 20.6 ± 0.2, 15.6 ± 0.2, 17.1 ± 0.2, 8.9 ± 0.2, 14.9 ± 0.2, and 17.4 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form A characterized by a TGA thermogram showing about 11.5% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form A characterized by a DSC thermogram comprising an endothermic peak at about 149 °C. In some embodiments, the solvated crystalline form is Form A characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 13; b. a TGA thermogram showing about 11.5% weight loss up to 180 °C; and c. a DSC thermogram comprising an endothermic peak at about 149 °C. In some embodiments, the solvated crystalline form is Form A described herein. In some embodiments, Form A is pure. In some embodiments, Form A is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form A is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form C / S In some embodiments, the solvated crystalline form is a MTBE solvate. In some embodiments, the MTBE solvate is Form C / S (freebase Form C and Form S are the same crystal form). In some embodiments, the solvated crystalline form is Form C / S characterized by an XRPD pattern substantially as set forth in Figure 14. In some embodiments, Form C / S is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 14. In some embodiments, Form C / S is characterized by an XRPD pattern comprising has one, two, three, four, five six,seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 15. Representative XRPD peaks for Form C / S are: Table 15In some embodiments, the form is Form C / S characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 5.9 ± 0.2, 17.2 ± 0.2, 18.2 ± 0.2, 20.6 ± 0.2, 15.4 ± 0.2, 9.0 ± 0.2, 14.8 ± 0.2, 15.1 ± 0.2, 19.8 ± 0.2, and 16.1 ± 0.2 degrees 2θ. In some embodiments, the form is Form C / S characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 5.9 ± 0.2, 17.2 ± 0.2, 18.2 ± 0.2, 20.6 ± 0.2, 15.4 ± 0.2, 9.0 ± 0.2, 14.8 ± 0.2, 15.1 ± 0.2, 19.8 ± 0.2, and 16.1 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form C / S characterized by a TGA thermogram showing about 4.9% weight loss up to 110 °C and about 5.0% weight loss between 110 to 180 °C. In some embodiments, the solvated crystalline form is Form C / S characterized by a DSC thermogram comprising an endothermic peak at about 147 °C. In some embodiments, the solvated crystalline form is Form C / S characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 14; b. a TGA thermogram showing about 4.9% weight loss up to 110 °C and about 5.0% weight loss between 110 to 180 °C; and c. a DSC thermogram comprising an endothermic peak at about 147 °C. In some embodiments, the solvated crystalline form is Form C / S described herein. In some embodiments, Form C / S is pure. In some embodiments, Form C / S is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form C / S is no less than about 95%, no less than about 96%, no lessthan about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form E In some embodiments, the solvated crystalline form is an ACN solvate. In some embodiments, the ACN solvate is Form E. In some embodiments, the solvated crystalline form is Form E characterized by an XRPD pattern substantially as set forth in Figure 15. In some embodiments, Form E is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 15. In some embodiments, Form E is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 16. Representative XRPD peaks for Form E are: Table 16In some embodiments, the form is Form E characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 15.6 ± 0.2, 20.1 ± 0.2, 19.6 ± 0.2, 6.5 ± 0.2, 10.3 ± 0.2, 14.7 ± 0.2, 16.1 ± 0.2, 23.4 ± 0.2, 17.2 ± 0.2, and 22.9 ± 0.2 degrees 2θ. In some embodiments, the form is Form E characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 15.6 ± 0.2, 20.1 ± 0.2, 19.6 ± 0.2, 6.5 ± 0.2, 10.3 ± 0.2, 14.7 ± 0.2, 16.1 ± 0.2, 23.4 ± 0.2, 17.2 ± 0.2, and 22.9 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form E characterized by a TGA thermogram showing about 7.3% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form E characterized by a DSC thermogram comprising at least one endothermic peak at about 68 °C, about 164 °C, or about195 °C. In some embodiments, the solvated crystalline form is Form E characterized by a DSC thermogram comprising endothermic peaks at about 68 °C, about 164 °C, and about 195 °C. In some embodiments, the solvated crystalline form is Form E characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 15; b. a TGA thermogram showing about 7.3% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 68 °C, about 164 °C, or about 195 °C. In some embodiments, the solvated crystalline form is Form E characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 15; b. a TGA thermogram showing about 7.3% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 68 °C, about 164 °C, and about 195 °C. In some embodiments, the solvated crystalline form is Form E described herein. In some embodiments, Form E is pure. In some embodiments, Form E is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form E is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form F In some embodiments, the solvated crystalline form is an acetone solvate. In some embodiments, the acetone solvate is Form F. In some embodiments, the solvated crystalline form is Form F characterized by an XRPD pattern substantially as set forth in Figure 16. In some embodiments, the solvated crystalline form is Form F described herein. In some embodiments, Form F is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 16. In some embodiments, Form F is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 17. Representative XRPD peaks for Form F are: Table 17In some embodiments, the form is Form F characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 6.4 ± 0.2, 19.8 ± 0.2, 9.9 ± 0.2, 14.2 ± 0.2, 16.4 ± 0.2, 15.9 ± 0.2, 12.9 ± 0.2, 24.0 ± 0.2, 9.4 ± 0.2, and 25.7 ± 0.2 degrees 2θ. In some embodiments, the form is Form F characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 6.4 ± 0.2, 19.8 ± 0.2, 9.9 ± 0.2, 14.2 ± 0.2, 16.4 ± 0.2, 15.9 ± 0.2, 12.9 ± 0.2, 24.0 ± 0.2, 9.4 ± 0.2, and 25.7 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form F characterized by a TGA thermogram showing about 1.9% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form F characterized by a DSC thermogram comprising at least one endothermic peak at about 51 °C, about 95 °C, or about 194 °C. In some embodiments, the solvated crystalline form is Form F characterized by a DSC thermogram comprising endothermic peaks at about 51 °C, about 95 °C, or about 194 °C. In some embodiments, the solvated crystalline form is Form F characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 16; b. a TGA thermogram showing about 1.9% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 51 °C, about 95 °C, or about 194 °C. In some embodiments, the solvated crystalline form is Form F characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 16; b. a TGA thermogram showing about 1.9% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 51 °C, about 95 °C, and about 194 °C. In some embodiments, the solvated crystalline form is Form F described herein. In some embodiments, Form F is pure. In some embodiments, Form F is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form F is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form H In some embodiments, the solvated crystalline form is a THF solvate. In some embodiments, the THF solvate is Form H. In some embodiments, the solvated crystalline form is Form H characterized by an XRPD pattern substantially as set forth in Figure 17. In someembodiments, Form H is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 17. In some embodiments, Form H is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 18. Representative XRPD peaks for Form H are: Table 18In some embodiments, the form is Form H characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 19.0 ± 0.2, 14.9 ± 0.2, 15.7 ± 0.2, 6.3 ± 0.2, 19.8 ± 0.2, 8.9 ± 0.2, 10.1 ± 0.2, 23.1 ± 0.2, 8.4 ± 0.2, and 22.2 ± 0.2 degrees 2θ. In some embodiments, the form is Form H characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 19.0 ± 0.2, 14.9 ± 0.2, 15.7 ± 0.2, 6.3 ± 0.2, 19.8 ± 0.2, 8.9 ± 0.2, 10.1 ± 0.2, 23.1 ± 0.2, 8.4 ± 0.2, and 22.2 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form H characterized by a TGA thermogram showing about 11.2% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form H characterized by a DSC thermogram comprising at least one endothermic peak at about 132 °C or about 192 °C. In some embodiments, the solvated crystalline form is Form H characterized by a DSC thermogram comprising endothermic peaks at about 132 °C and about 192 °C. In some embodiments, the solvated crystalline form is Form H characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 17; b. a TGA thermogram showing about 11.2% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 132 °C or about 192 °C. In some embodiments, the solvated crystalline form is Form H characterized by two or more of: a. an XRPD pattern substantially asset forth in Figure 17; b. a TGA thermogram showing about 11.2% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 132 °C and about 192 °C. In some embodiments, the solvated crystalline form is Form H described herein. In some embodiments, Form H is pure. In some embodiments, Form H is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form H is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form I In some embodiments, the solvated crystalline form is a DMF solvate. In some embodiments, the DMF solvate is Form I. In some embodiments, the solvated crystalline form is Form I characterized by an XRPD pattern substantially as set forth in Figure 18. In some embodiments, Form I is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 18. In some embodiments, Form I is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 19. Representative XRPD peaks for Form I are: Table 19In some embodiments, the form is Form I characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 19.2 ± 0.2, 15.7 ± 0.2, 6.2 ± 0.2, 23.3 ± 0.2, 15.2 ± 0.2, 28.1 ± 0.2, 22.8 ± 0.2, 8.4 ± 0.2, 22.5 ± 0.2, and 9.9 ± 0.2 degrees 2θ. In some embodiments, the form is Form I characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 19.2 ± 0.2, 15.7 ± 0.2, 6.2 ± 0.2, 23.3 ± 0.2, 15.2 ±0.2, 28.1 ± 0.2, 22.8 ± 0.2, 8.4 ± 0.2, 22.5 ± 0.2, and 9.9 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form I characterized by a TGA thermogram showing about 10.1% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form I characterized by a DSC thermogram comprising an endothermic peak at about 152 °C. In some embodiments, the solvated crystalline form is Form I characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 18; b. a TGA thermogram showing about 10.1% weight loss up to 180 °C; and c. a DSC thermogram comprising an endothermic peak at about 152 °C. In some embodiments, the solvated crystalline form is Form I described herein. In some embodiments, Form I is pure. In some embodiments, Form I is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form I is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form L In some embodiments, the solvated crystalline form is a 1,4-dioxane solvate. In some embodiments, the 1,4-dioxane solvate is Form L. In some embodiments, the solvated crystalline form is Form L characterized by an XRPD pattern substantially as set forth in Figure 19. In some embodiments, Form L is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 19. In some embodiments, Form L is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 20. Representative XRPD peaks for Form L are: Table 20In some embodiments, the form is Form L characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 18.5 ± 0.2, 15.8 ± 0.2, 19.6 ± 0.2, 6.1 ± 0.2, 15.1 ± 0.2, 23.4 ± 0.2, 8.5 ± 0.2, 16.2 ± 0.2, 9.1 ± 0.2, and 28.4 ± 0.2 degrees 2θ. In some embodiments, the form is Form L characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 18.5 ± 0.2, 15.8 ± 0.2, 19.6 ± 0.2, 6.1 ± 0.2, 15.1 ± 0.2, 23.4 ± 0.2, 8.5 ± 0.2, 16.2 ± 0.2, 9.1 ± 0.2, and 28.4 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form L characterized by a TGA thermogram showing about 8.4% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form L characterized by a DSC thermogram comprising an endothermic peak at about 144 °C. In some embodiments, the solvated crystalline form is Form L characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 19; b. a TGA thermogram showing about 8.4% weight loss up to 180 °C; and c. a DSC thermogram comprising an endothermic peak at about 144 °C. In some embodiments, the solvated crystalline form is Form L described herein. In some embodiments, Form L is pure. In some embodiments, Form L is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form L is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form M In some embodiments, the solvated crystalline form is a DMAc solvate. In some embodiments, the DMAc solvate is Form M. In some embodiments, the solvated crystalline form is Form M characterized by an XRPD pattern substantially as set forth in Figure 20. In some embodiments, Form M is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 20. In some embodiments, Form M is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 21. Representative XRPD peaks for Form M are: Table 21In some embodiments, the form is Form M characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 6.0 ± 0.2, 18.9 ± 0.2, 25.0 ± 0.2, 22.8 ± 0.2, 9.7 ± 0.2, 14.9 ± 0.2, 17.0 ± 0.2, 27.7 ± 0.2, 21.6 ± 0.2, and 16.6 ± 0.2 degrees 2θ. In some embodiments, the form is Form M characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately approximately 6.0 ± 0.2, 18.9 ± 0.2, 25.0 ± 0.2, 22.8 ± 0.2, 9.7 ± 0.2, 14.9 ± 0.2, 17.0 ± 0.2, 27.7 ± 0.2, 21.6 ± 0.2, and 16.6 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form M characterized by a TGA thermogram showing about 12.5% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form M characterized by a DSC thermogram comprising an endothermic peak at about 159 °C. In some embodiments, the solvated crystalline form is Form M characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 20; b. a TGA thermogram showing about 12.5% weight loss up to 180 °C; and c. a DSC thermogram comprising an endothermic peak at about 159 °C. In some embodiments, the solvated crystalline form is Form M described herein. In some embodiments, Form M is pure. In some embodiments, Form M is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form M is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form R In some embodiments, the solvated crystalline form is an IPA solvate. In some embodiments, the IPA solvate is Form R. In some embodiments, the solvated crystalline form is Form R characterized by an XRPD pattern substantially as set forth in Figure 21. In some embodiments, Form R is characterized by an XRPD pattern comprising one, two, three, four,five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 21. In some embodiments, Form R is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 22. Representative XRPD peaks for Form R are: Table 22In some embodiments, the form is Form R characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 5.3 ± 0.2, 19.7 ± 0.2, 15.7 ± 0.2, 21.3 ± 0.2, 14.5 ± 0.2, 17.1 ± 0.2, 6.7 ± 0.2, 21.0 ± 0.2, 16.3 ± 0.2, and 25.9 ± 0.2 degrees 2θ. In some embodiments, the form is Form R characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 5.3 ± 0.2, 19.7 ± 0.2, 15.7 ± 0.2, 21.3 ± 0.2, 14.5 ± 0.2, 17.1 ± 0.2, 6.7 ± 0.2, 21.0 ± 0.2, 16.3 ± 0.2, and 25.9 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form R characterized by a TGA thermogram showing about 6.3% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form R characterized by a DSC thermogram comprising an endothermic peak at about 165 °C. In some embodiments, the solvated crystalline form is Form R characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 21; b. a TGA thermogram showing about 6.3% weight loss up to 180 °C; and c. a DSC thermogram comprising an endothermic peak at about 165 °C. In some embodiments, the solvated crystalline form is Form R described herein. In some embodiments, Form R is pure. In some embodiments, Form R is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form R is no less than about 95%, no less than about 96%, no less than about 97%, noless than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form T In some embodiments, the solvated crystalline form is an EtOAc solvate. In some embodiments, the EtOAc solvate is Form T. In some embodiments, the solvated crystalline form is Form T characterized by an XRPD pattern substantially as set forth in Figure 22. In some embodiments, Form T is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 22. In some embodiments, Form T is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 23. Representative XRPD peaks for Form T are: Table 23In some embodiments, the form is Form T characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 6.0 ± 0.2, 15.7 ± 0.2, 18.5 ± 0.2, 8.8 ± 0.2, 9.2 ± 0.2, 9.4 ± 0.2, 20.4 ± 0.2, 17.3 ± 0.2, 17.7 ± 0.2, and 14.4 ± 0.2 degrees 2θ. In some embodiments, the form is Form T characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 6.0 ± 0.2, 15.7 ± 0.2, 18.5 ± 0.2, 8.8 ± 0.2, 9.2 ± 0.2, 9.4 ± 0.2, 20.4 ± 0.2, 17.3 ± 0.2, 17.7 ± 0.2, and 14.4 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form T characterized by a TGA thermogram showing about 11.7% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form T characterized by a DSC thermogram comprising an endothermic peak at about 134 °C.In some embodiments, the solvated crystalline form is Form T characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 22; b. a TGA thermogram showing about 11.7% weight loss up to 180 °C; and c. a DSC thermogram comprising an endothermic peak at about 134 °C. In some embodiments, the solvated crystalline form is Form T described herein. In some embodiments, Form T is pure. In some embodiments, Form T is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form T is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form V In some embodiments, the solvated crystalline form is an IPAc solvate. In some embodiments, the IPAc solvate is Form V. In some embodiments, the solvated crystalline form is Form V characterized by an XRPD pattern substantially as set forth in Figure 23. In some embodiments, Form V is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 23. In some embodiments, Form V is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 24. Representative XRPD peaks for Form V are: Table 24In some embodiments, the form is Form V characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 15.9 ± 0.2, 5.8 ± 0.2, 19.5 ± 0.2, 15.0 ± 0.2, 17.6 ± 0.2, 23.5 ± 0.2, 8.5 ± 0.2, 21.6 ± 0.2, 9.4 ± 0.2, and 17.3 ± 0.2 degrees 2θ. In some embodiments, the form is Form V characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selectedfrom the group consisting of approximately 15.9 ± 0.2, 5.8 ± 0.2, 19.5 ± 0.2, 15.0 ± 0.2, 17.6 ± 0.2, 23.5 ± 0.2, 8.5 ± 0.2, 21.6 ± 0.2, 9.4 ± 0.2, and 17.3 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form V characterized by a TGA thermogram showing about 13.5% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form V characterized by a DSC thermogram comprising at least one endothermic peak at about 55 °C, about 110 °C, or about 175 °C. In some embodiments, the solvated crystalline form is Form V characterized by a DSC thermogram comprising endothermic peaks at about 55 °C, about 110 °C, and about 175 °C. In some embodiments, the solvated crystalline form is Form V characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 23; b. a TGA thermogram showing about 13.5% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 55 °C, about 110 °C, or about 175 °C. In some embodiments, the solvated crystalline form is Form V characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 23; b. a TGA thermogram showing about 13.5% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 55 °C, about 110 °C, and about 175 °C. In some embodiments, the solvated crystalline form is Form V described herein. In some embodiments, Form V is pure. In some embodiments, Form V is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form V is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form W In some embodiments, the solvated crystalline form is a CHCl3 solvate. In some embodiments, the CHCl3 solvate is Form W. In some embodiments, the solvated crystalline form is Form W characterized by an XRPD pattern substantially as set forth in Figure 24. In some embodiments, Form W is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 24. In some embodiments, Form W is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 25. Representative XRPD peaks for Form W are: Table 25In some embodiments, the form is Form W characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 5.7 ± 0.2, 19.7 ± 0.2, 16.3 ± 0.2, 13.3 ± 0.2, 21.4 ± 0.2, 6.3 ± 0.2, 6.1 ± 0.2, 21.6 ± 0.2, 18.8 ± 0.2, and 14.7 ± 0.2 degrees 2θ. In some embodiments, the form is Form W characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately approximately 5.7 ± 0.2, 19.7 ± 0.2, 16.3 ± 0.2, 13.3 ± 0.2, 21.4 ± 0.2, 6.3 ± 0.2, 6.1 ± 0.2, 21.6 ± 0.2, 18.8 ± 0.2, and 14.7 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form W characterized by a TGA thermogram showing about 8.9% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form W characterized by a DSC thermogram comprising at least one endothermic peak at about 93 °C or about 143 °C. In some embodiments, the solvated crystalline form is Form W characterized by a DSC thermogram comprising endothermic peaks at about 93 °C and about 143 °C. In some embodiments, the solvated crystalline form is Form W characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 24; b. a TGA thermogram showing about 8.9% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 93 °C or about 143 °C. In some embodiments, the solvated crystalline form is Form W characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 24; b. a TGA thermogram showing about 8.9% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 93 °C and about 143 °C. In some embodiments, the solvated crystalline form is Form W described herein. In some embodiments, Form W is pure. In some embodiments, Form W is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form W is no less than about 95%, no less than about 96%, no lessthan about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form X In some embodiments, the solvated crystalline form is a DCM solvate. In some embodiments, the DCM solvate is Form X. In some embodiments, the solvated crystalline form is Form X characterized by an XRPD pattern substantially as set forth in Figure 25. In some embodiments, Form X is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 25. In some embodiments, Form X is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 26. Representative XRPD peaks for Form X are: Table 26In some embodiments, the form is Form X characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 19.9 ± 0.2, 5.8 ± 0.2, 22.5 ± 0.2, 23.5 ± 0.2, 13.2 ± 0.2, 17.4 ± 0.2, 15.1 ± 0.2, 14.1 ± 0.2, 17.7 ± 0.2, and 21.5 ± 0.2 degrees 2θ. In some embodiments, the form is Form X characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 19.9 ± 0.2, 5.8 ± 0.2, 22.5 ± 0.2, 23.5 ± 0.2, 13.2 ± 0.2, 17.4 ± 0.2, 15.1 ± 0.2, 14.1 ± 0.2, 17.7 ± 0.2, and 21.5 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form X characterized by a TGA thermogram showing about 8.4% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form X characterized by a DSC thermogram comprising at least one endothermic peak at about 126 °C, about 137 °C, or about161 °C. In some embodiments, the solvated crystalline form is Form X characterized by a DSC thermogram comprising endothermic peaks at about 126 °C, about 137 °C, and about 161 °C. In some embodiments, the solvated crystalline form is Form X characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 25; b. a TGA thermogram showing about 8.4% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 126 °C, about 137 °C, or about 161 °C. In some embodiments, the solvated crystalline form is Form X characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 25; b. a TGA thermogram showing about 8.4% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 126 °C, about 137 °C, and about 161 °C. In some embodiments, the solvated crystalline form is Form X described herein. In some embodiments, Form X is pure. In some embodiments, Form X is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form X is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form Y In some embodiments, the solvated crystalline form is a CMPE solvate. In some embodiments, the CMPE solvate is Form Y. In some embodiments, the solvated crystalline form is Form Y characterized by an XRPD pattern substantially as set forth in Figure 26. In some embodiments, Form Y is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 26. In some embodiments, Form Y is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 27. Representative XRPD peaks for Form Y are: Table 27In some embodiments, the form is Form Y characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 5.9 ± 0.2, 18.2 ± 0.2, 17.3 ± 0.2, 15.0 ± 0.2, 20.6 ± 0.2, 15.4 ± 0.2, 8.9 ± 0.2, 19.8 ± 0.2, 23.4 ± 0.2, and 9.3 ± 0.2 degrees 2θ. In some embodiments, the form is Form Y characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 5.9 ± 0.2, 18.2 ± 0.2, 17.3 ± 0.2, 15.0 ± 0.2, 20.6 ± 0.2, 15.4 ± 0.2, 8.9 ± 0.2, 19.8 ± 0.2, 23.4 ± 0.2, and 9.3 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form Y characterized by a TGA thermogram showing about 12.4% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form Y characterized by a DSC thermogram comprising at least one endothermic peak at about 125 °C or about 141 °C. In some embodiments, the solvated crystalline form is Form Y characterized by a DSC thermogram comprising endothermic peaks at about 125 °C and about 141 °C. In some embodiments, the solvated crystalline form is Form Y characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 26; b. a TGA thermogram showing about 12.4% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 125 °C or about 141 °C. In some embodiments, the solvated crystalline form is Form Y characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 26; b. a TGA thermogram showing about 12.4% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 125 °C and about 141 °C. In some embodiments, the solvated crystalline form is Form Y described herein. In some embodiments, Form Y is pure. In some embodiments, Form Y is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form Y is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form Z In some embodiments, the solvated crystalline form is an anisole solvate. In some embodiments, the anisole solvate is Form Z. In some embodiments, the solvated crystalline form is Form Z characterized by an XRPD pattern substantially as set forth in Figure 27. In some embodiments, Form Z is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure27. In some embodiments, Form Z is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 28. Representative XRPD peaks for Form Z are: Table 28In some embodiments, the form is Form Z characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 5.9 ± 0.2, 18.2 ± 0.2, 17.3 ± 0.2, 15.0 ± 0.2, 20.6 ± 0.2, 15.4 ± 0.2, 8.9 ± 0.2, 19.8 ± 0.2, 23.4 ± 0.2, and 9.3 ± 0.2 degrees 2θ. In some embodiments, the form is Form Z characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 5.9 ± 0.2, 18.2 ± 0.2, 17.3 ± 0.2, 15.0 ± 0.2, 20.6 ± 0.2, 15.4 ± 0.2, 8.9 ± 0.2, 19.8 ± 0.2, 23.4 ± 0.2, and 9.3 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form Z characterized by a TGA thermogram showing about 13.1% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form Z characterized by a DSC thermogram comprising an endothermic peak at about 105 °C. In some embodiments, the solvated crystalline form is Form Z characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 27; b. a TGA thermogram showing about 13.1% weight loss up to 180 °C; and c. a DSC thermogram comprising an endothermic peak at about 105 °C. In some embodiments, the solvated crystalline form is Form Z described herein. In some embodiments, Form Z is pure. In some embodiments, Form Z is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form Z is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%.Form AD In some embodiments, the solvated crystalline form is a diisopropyl ether solvate. In some embodiments, the diisopropyl ether solvate is Form AD. In some embodiments, the solvated crystalline form is Form AD characterized by an XRPD pattern substantially as set forth in Figure 28. In some embodiments, Form AD is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 28. In some embodiments, Form AD is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 29. Representative XRPD peaks for Form AD are: Table 29In some embodiments, the form is Form AD characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 15.7 ± 0.2, 5.9 ± 0.2, 17.5 ± 0.2, 9.4 ± 0.2, 15.0 ± 0.2, 19.1 ± 0.2, 8.4 ± 0.2, 23.1 ± 0.2, 22.6 ± 0.2, and 22.1 ± 0.2 degrees 2θ. In some embodiments, the form is Form AD characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 15.7 ± 0.2, 5.9 ± 0.2, 17.5 ± 0.2, 9.4 ± 0.2, 15.0 ± 0.2, 19.1 ± 0.2, 8.4 ± 0.2, 23.1 ± 0.2, 22.6 ± 0.2, and 22.1 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form AD characterized by a TGA thermogram showing about 11.0% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form AD characterized by a DSC thermogram comprising at least one endothermic peak at about 64 °C, about 116 °C, or about 179 °C. In some embodiments, the solvated crystalline form is Form AD characterized bya DSC thermogram comprising endothermic peaks at about 64 °C, about 116 °C, and about 179 °C. In some embodiments, the solvated crystalline form is Form AD characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 28; b. a TGA thermogram showing about 11.0% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 64 °C, about 116 °C, or about 179 °C. In some embodiments, the solvated crystalline form is Form AD characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 28; b. a TGA thermogram showing about 11.0% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 64 °C, about 116 °C, and about 179 °C. In some embodiments, the solvated crystalline form is Form AD described herein. In some embodiments, Form AD is pure. In some embodiments, Form AD is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form AD is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form AE In some embodiments, the solvated crystalline form is a toluene solvate. In some embodiments, the toluene solvate is Form AE. In some embodiments, the solvated crystalline form is Form AE characterized by an XRPD pattern substantially as set forth in Figure 29. In some embodiments, Form AE is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 29. In some embodiments, Form AE is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 30. Representative XRPD peaks for Form AE are: Table 30In some embodiments, the form is Form AE characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 5.5 ± 0.2, 14.6 ± 0.2, 15.1 ± 0.2, 9.9 ± 0.2, 21.5 ± 0.2, 20.6 ± 0.2, 22.4 ± 0.2, 16.3 ± 0.2, 19.9 ± 0.2, and 7.0 ± 0.2 degrees 2θ. In some embodiments, the form is Form AE characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 5.5 ± 0.2, 14.6 ± 0.2, 15.1 ± 0.2, 9.9 ± 0.2, 21.5 ± 0.2, 20.6 ± 0.2, 22.4 ± 0.2, 16.3 ± 0.2, 19.9 ± 0.2, and 7.0 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form AE characterized by a TGA thermogram showing about 12.4% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form AE characterized by a DSC thermogram comprising at least one endothermic peak at about 56 °C or about 115 °C. In some embodiments, the solvated crystalline form is Form AE characterized by a DSC thermogram comprising endothermic peaks at about 56 °C and about 115 °C. In some embodiments, the solvated crystalline form is Form AE characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 29; b. a TGA thermogram showing about 12.4% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 56 °C or about 115 °C. In some embodiments, the solvated crystalline form is Form AE characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 29; b. a TGA thermogram showing about 12.4% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 56 °C and about 115 °C. In some embodiments, the solvated crystalline form is Form AE described herein. In some embodiments, Form AE is pure. In some embodiments, Form AE is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form AE is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form AH In some embodiments, the solvated crystalline form is an NMP solvate. In some embodiments, the NMP solvate is Form AH. In some embodiments, the solvated crystalline form is Form AH characterized by an XRPD pattern substantially as set forth in Figure 30. In some embodiments, Form AH is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure30. In some embodiments, Form AH is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 31. Representative XRPD peaks for Form AH are: Table 31In some embodiments, the form is Form AH characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 5.9 ± 0.2, 19.0 ± 0.2, 9.6 ± 0.2, 16.7 ± 0.2, 17.0 ± 0.2, 14.6 ± 0.2, 24.7 ± 0.2, 22.8 ± 0.2, 17.4 ± 0.2, and 18.5 ± 0.2 degrees 2θ. In some embodiments, the form is Form AH characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 5.9 ± 0.2, 19.0 ± 0.2, 9.6 ± 0.2, 16.7 ± 0.2, 17.0 ± 0.2, 14.6 ± 0.2, 24.7 ± 0.2, 22.8 ± 0.2, 17.4 ± 0.2, and 18.5 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form AH characterized by a TGA thermogram showing about 14.6% weight loss up to 190 °C. In some embodiments, the solvated crystalline form is Form AH characterized by a DSC thermogram comprising at least one endothermic peak at about 156 °C or about 173 °C. In some embodiments, the solvated crystalline form is Form AH characterized by a DSC thermogram comprising endothermic peaks at about 156 °C and about 173 °C. In some embodiments, the solvated crystalline form is Form AH characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 30; b. a TGA thermogram showing about 14.6% weight loss up to 190 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 156 °C or about 173 °C. In some embodiments, the solvated crystalline form is Form AH characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 30; b. a TGA thermogram showing about 14.6% weight loss up to 190 °C;and c. a DSC thermogram comprising endothermic peaks at about 156 °C and about 173 °C. In some embodiments, the solvated crystalline form is Form AH described herein. In some embodiments, Form AH is pure. In some embodiments, Form AH is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form AH is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form AI In some embodiments, the solvated crystalline form is a DMSO solvate. In some embodiments, the DMSO solvate is Form AI. In some embodiments, the solvated crystalline form is Form AI characterized by an XRPD pattern substantially as set forth in Figure 31. In some embodiments, Form AI is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 31. In some embodiments, Form AI is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 32. Representative XRPD peaks for Form AI are: Table 32In some embodiments, the form is Form AI characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 18.8 ± 0.2, 15.7 ± 0.2, 6.2 ± 0.2, 15.0 ± 0.2, 23.5 ± 0.2, 19.4 ± 0.2, 19.7 ± 0.2, 9.0 ± 0.2, 8.5 ± 0.2, and 9.9 ± 0.2 degrees 2θ. In some embodiments, the form is Form AI characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 18.8 ± 0.2, 15.7 ± 0.2, 6.2 ± 0.2, 15.0 ± 0.2, 23.5 ± 0.2, 19.4 ± 0.2, 19.7 ± 0.2, 9.0 ± 0.2, 8.5 ± 0.2, and 9.9 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source.In some embodiments, the solvated crystalline form is Form AI characterized by a TGA thermogram showing about 12.0% weight loss up to 190 °C. In some embodiments, the solvated crystalline form is Form AI characterized by a DSC thermogram comprising at least one endothermic peak at about 155 °C or about 166 °C. In some embodiments, the solvated crystalline form is Form AI characterized by a DSC thermogram comprising endothermic peaks at about 155 °C and about 166 °C. In some embodiments, the solvated crystalline form is Form AI characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 31; b. a TGA thermogram showing about 12.0% weight loss up to 190 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 155 °C or about 160 °C. In some embodiments, the solvated crystalline form is Form AI characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 31; b. a TGA thermogram showing about 12.0% weight loss up to 190 °C; and c. a DSC thermogram comprising endothermic peaks at about 155 °C and about 166 °C. In some embodiments, the solvated crystalline form is Form AI described herein. In some embodiments, Form AI is pure. In some embodiments, Form AI is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form AI is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form AJ In some embodiments, the solvated crystalline form is a CHCl3 solvate. In some embodiments, the CHCl3 solvate is Form AJ. In some embodiments, the solvated crystalline form is Form AJ characterized by an XRPD pattern substantially as set forth in Figure 32. In some embodiments, Form AJ is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 32. In some embodiments, Form AJ is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 33. Representative XRPD peaks for Form AJ are: Table 33In some embodiments, the form is Form AJ characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 14.5 ± 0.2, 20.7 ± 0.2, 19.1 ± 0.2, 19.4 ± 0.2, 20.3 ± 0.2, 16.7 ± 0.2, 8.1 ± 0.2, 17.0 ± 0.2, 17.8 ± 0.2, and 10.8 ± 0.2 degrees 2θ. In some embodiments, the form is Form AJ characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 14.5 ± 0.2, 20.7 ± 0.2, 19.1 ± 0.2, 19.4 ± 0.2, 20.3 ± 0.2, 16.7 ± 0.2, 8.1 ± 0.2, 17.0 ± 0.2, 17.8 ± 0.2, and 10.8 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form AJ characterized by a TGA thermogram showing about 17.3% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form AJ characterized by a DSC thermogram comprising at least one endothermic peak at about 112 °C or about 138 °C. In some embodiments, the solvated crystalline form is Form AJ characterized by a DSC thermogram comprising endothermic peaks at about 112 °C and about 138 °C. In some embodiments, the solvated crystalline form is Form AJ characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 32; b. a TGA thermogram showing about 17.3% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 112 °C or about 138 °C. In some embodiments, the solvated crystalline form is Form AJ characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 32; b. a TGA thermogram showing about 17.3% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 112 °C and about 138 °C. In some embodiments, the solvated crystalline form is Form AJ described herein. In some embodiments, Form AJ is pure. In some embodiments, Form AJ is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form AJ is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form AP In some embodiments, the solvated crystalline form is a 1,2-propanediol solvate. In some embodiments, the 1,2-propanediol solvate is Form AP. In some embodiments, thesolvated crystalline form is Form AP characterized by an XRPD pattern substantially as set forth in Figure 33. In some embodiments, Form AP is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 33. In some embodiments, Form AP is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 34. Representative XRPD peaks for Form AP are: Table 34In some embodiments, the form is Form AP characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 7.6 ± 0.2, 19.0 ± 0.2, 22.8 ± 0.2, 17.6 ± 0.2, 11.4 ± 0.2, 17.3 ± 0.2, 17.1 ± 0.2, 3.8 ± 0.2, 6.2 ± 0.2, and 16.4 ± 0.2 degrees 2θ. In some embodiments, the form is Form AP characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 7.6 ± 0.2, 19.0 ± 0.2, 22.8 ± 0.2, 17.6 ± 0.2, 11.4 ± 0.2, 17.3 ± 0.2, 17.1 ± 0.2, 3.8 ± 0.2, 6.2 ± 0.2, and 16.4 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form AP characterized by a TGA thermogram showing about 18.7% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form AP characterized by a DSC thermogram comprising at least one endothermic peak at about 77 °C or about 130 °C. In some embodiments, the solvated crystalline form is Form AP characterized by a DSC thermogram comprising endothermic peaks at about 77 °C and about 130 °C. In some embodiments, the solvated crystalline form is Form AP characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 33; b. a TGA thermogram showing about 18.7% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 77 °C or about 130 °C. In some embodiments, the solvatedcrystalline form is Form AP characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 33; b. a TGA thermogram showing about 18.7% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 77 °C and about 130 °C. In some embodiments, the solvated crystalline form is Form AP described herein. In some embodiments, Form AP is pure. In some embodiments, Form AP is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form AP is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form AQ In some embodiments, the solvated crystalline form is a 1,2-dimethoxyethane solvate. In some embodiments, the 1,2-dimethoxyethane solvate is Form AQ. In some embodiments, the solvated crystalline form is Form AQ characterized by an XRPD pattern substantially as set forth in Figure 34. In some embodiments, Form AQ is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 34. In some embodiments, Form AQ is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 35. Representative XRPD peaks for Form AQ are: Table 35In some embodiments, the form is Form AQ characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 17.6 ± 0.2, 18.1 ± 0.2, 9.0 ± 0.2, 6.1 ± 0.2, 20.8 ± 0.2, 15.4 ± 0.2, 23.7 ± 0.2, 15.1 ± 0.2, 19.8 ± 0.2, and 9.3 ± 0.2 degrees 2θ. In some embodiments, the form is Form AQ characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaksselected from the group consisting of approximately 17.6 ± 0.2, 19.0 ± 0.2, 22.8 ± 0.2, 17.6 ± 0.2, 11.4 ± 0.2, 17.3 ± 0.2, 17.1 ± 0.2, 3.8 ± 0.2, 6.2 ± 0.2, and 16.4 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form AQ characterized by a TGA thermogram showing about 10.0% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form AQ characterized by a DSC thermogram comprising an endothermic peak at about 145 °C. In some embodiments, the solvated crystalline form is Form AQ characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 34; b. a TGA thermogram showing about 10.0% weight loss up to 180 °C; and c. a DSC thermogram comprising an endothermic peak at about 145 °C. In some embodiments, the solvated crystalline form is Form AQ described herein. In some embodiments, Form AQ is pure. In some embodiments, Form AQ is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form AQ is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form AR In some embodiments, the solvated crystalline form is a 2-tert-butoxyethanol solvate. In some embodiments, the 2-tert-butoxyethanol solvate is Form AR. In some embodiments, the solvated crystalline form is Form AR characterized by an XRPD pattern substantially as set forth in Figure 35. In some embodiments, Form AR is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 35. In some embodiments, Form AR is characterized by an XRPD pattern comprising has one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Table 36. Representative XRPD peaks for Form AR are: Table 36In some embodiments, the form is Form AR characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of approximately 17.1 ± 0.2, 5.7 ± 0.2, 16.2 ± 0.2, 19.3 ± 0.2, 19.0 ± 0.2, 11.4 ± 0.2, 12.4 ± 0.2, 14.7 ± 0.2, 20.2 ± 0.2, and 22.9 ± 0.2 degrees 2θ. In some embodiments, the form is Form AR characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 17.1 ± 0.2, 5.7 ± 0.2, 16.2 ± 0.2, 19.3 ± 0.2, 19.0 ± 0.2, 11.4 ± 0.2, 12.4 ± 0.2, 14.7 ± 0.2, 20.2 ± 0.2, and 22.9 ± 0.2 degrees 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is Form AR characterized by a TGA thermogram showing about 26.0% weight loss up to 180 °C. In some embodiments, the solvated crystalline form is Form AR characterized by a DSC thermogram comprising at least one endothermic peak at about 50 °C, about 72 °C, or about 135 °C. In some embodiments, the solvated crystalline form is Form AR characterized by a DSC thermogram comprising endothermic peaks at about 50 °C, about 72 °C, and about 135 °C. In some embodiments, the solvated crystalline form is Form AR characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 35; b. a TGA thermogram showing about 26.0% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 50 °C, about 72 °C, or about 135 °C. In some embodiments, the solvated crystalline form is Form AR characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 35; b. a TGA thermogram showing about 26.0% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 50 °C, about 72 °C, and about 135 °C. In some embodiments, the solvated crystalline form is Form AR described herein. In some embodiments, Form AR is pure. In some embodiments, Form AR is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form AR is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Metastable Crystalline FormsIn some embodiments, the crystalline form is a metastable crystalline form. In some embodiments, the metastable crystalline form is Form B / AF, Form K, Form AB, Form AM, Form AN, Form AO, or Form P described herein. In some embodiments, the metastable crystalline form is Form B / AF (freebase Form B and Form AF were the same crystal form). In some embodiments, the metastable crystalline form is Form K. In some embodiments, the metastable crystalline form is Form AB. In some embodiments, the metastable crystalline form is Form AM. In some embodiments, the metastable crystalline form is Form AN. In some embodiments, the metastable crystalline form is Form AO. In some embodiments, the metastable crystalline form is Form P. Various of the metastable crystalline forms described herein are summarized as follows:Form B / AF In some embodiments, the metastable crystalline form is Form B / AF characterized by an XRPD pattern substantially as set forth in Figure 36. In some embodiments, the metastable crystalline form is Form B / AF described herein. In some embodiments, Form B / AF is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 36. In some embodiments, Form B / AF is pure. In some embodiments, Form B / AF is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form B / AF is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form K In some embodiments, the metastable crystalline form is Form K characterized by an XRPD pattern substantially as set forth in Figure 37. In some embodiments, the metastable crystalline form is Form K described herein. In some embodiments, Form K is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 37. In some embodiments, Form K is pure. In some embodiments, Form K is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, thepurity of Form K is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form AB In some embodiments, the metastable crystalline form is Form AB characterized by an XRPD pattern substantially as set forth in Figure 38. In some embodiments, the metastable crystalline form is Form AB described herein. In some embodiments, Form AB is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 38. In some embodiments, Form AB is pure. In some embodiments, Form AB is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form AB is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form AM In some embodiments, the metastable crystalline form is Form AM characterized by an XRPD pattern substantially as set forth in Figure 39. In some embodiments, the metastable crystalline form is Form AM described herein. In some embodiments, Form AM is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 39. In some embodiments, Form AM is pure. In some embodiments, Form AM is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form AM is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form AN In some embodiments, the metastable crystalline form is Form AN characterized by an XRPD pattern substantially as set forth in Figure 40. In some embodiments, the metastable crystalline form is Form AN described herein. In some embodiments, Form AN is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 40. In some embodiments, Form AN is pure. In some embodiments, Form AN is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form AN is no less than about 95%, no less than about 96%, no lessthan about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form AO In some embodiments, the metastable crystalline form is Form AO characterized by an XRPD pattern substantially as set forth in Figure 41. In some embodiments, the metastable crystalline form is Form AO described herein. In some embodiments, Form AO is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 41. In some embodiments, Form AO is pure. In some embodiments, Form AO is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form AO is no less than about 95%, no less than about 96%, no less than about 97%, no less than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Form P In some embodiments, the metastable crystalline form is Form P characterized by an XRPD pattern substantially as set forth in Figure 42. In some embodiments, Form P is characterized by an XRPD pattern comprising one, two, three, four, five six, seven, eight nine, ten or all of the characteristic XRPD peaks as set forth in Figure 42. In some embodiments, the metastable crystalline form is Form P characterized by a TGA thermogram showing about 5.6% weight loss up to 180 °C. In some embodiments, the metastable crystalline form is Form P characterized by a DSC thermogram comprising at least one endothermic peak at about 78 °C or about 157 °C. In some embodiments, the metastable crystalline form is Form P characterized by a DSC thermogram comprising endothermic peaks at about 78 °C and about 157 °C. In some embodiments, the metastable crystalline form is Form P characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 42; b. a TGA thermogram showing about 5.6% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 78 °C or about 157 °C. In some embodiments, the metastable crystalline form is Form P characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 42; b. a TGA thermogram showing about 5.6% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 78 °C and about 157 °C. In some embodiments, the crystalline form is Form P described herein. In some embodiments, Form P is pure. In some embodiments, Form P is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form P is no less than about 95%, no less than about 96%, no less than about 97%, noless than about 98%, no less than about 99%, no less than about 99.5%, or no less than about 99.9%. Pharmaceutical Compositions / Formulations A solid form of a compound of Formula (I) as disclosed herein, may be formulated in accordance with standard pharmaceutical practice for use in a therapeutic combination for therapeutic treatment (including prophylactic treatment) of hyperproliferative disorders in mammals including humans. The disclosure provides a pharmaceutical composition comprising a solid form of a compound of Formula (I) as disclosed herein in association with one or more pharmaceutically acceptable carrier, glidant, diluent, or excipient. Suitable carriers, diluents, glidants, and excipients are well known to those skilled in the art and include materials such as carbohydrates, waxes, water soluble and / or swellable polymers, hydrophilic or hydrophobic materials, gelatin, oils, solvents, water and the like. The formulations may be prepared using conventional dissolution and mixing procedures. The compound of the present invention is typically formulated into pharmaceutical dosage forms to provide an easily controllable dosage of the drug and to enable patient compliance with the prescribed regimen. The pharmaceutical composition (or formulation) for application may be packaged in a variety of ways depending upon the method used for administering the drug. Generally, an article for distribution includes a container having deposited therein the pharmaceutical formulation in an appropriate form. Suitable containers are well known to those skilled in the art and include materials such as bottles (plastic and glass), sachets, ampoules, plastic bags, metal cylinders, and the like. The container may also include a tamper-proof assemblage to prevent indiscreet access to the contents of the package. In addition, the container has deposited thereon a label that describes the contents of the container. The label may also include appropriate warnings. Pharmaceutical formulations of a solid form of a compound of Formula (I) as disclosed herein may be prepared for various routes and types of administration with pharmaceutically acceptable diluents, carriers, excipients, glidants or stabilizers (Remington's Pharmaceutical Sciences (1995) 18th edition, Mack Publ. Co., Easton, Pa.), in the form of a lyophilized formulation, milled powder, or an aqueous solution. Formulation may be conducted by mixing at ambient temperature at the appropriate pH, and at the desired degree of purity, with physiologically acceptable carriers, i.e., carriers that are non-toxic to recipients at the dosages and concentrations employed. The pH of the formulation depends mainly on the particular use and the concentration of compound, but may range from about 3 to about 8.The pharmaceutical formulation is preferably sterile. In particular, formulations to be used for in vivo administration must be sterile. Such sterilization is readily accomplished by filtration through sterile filtration membranes. The pharmaceutical formulation ordinarily can be stored as a solid composition, a tablet, a pill, a capsule, a lyophilized formulation or as an aqueous solution. The pharmaceutical formulations of the disclosure are dosed and administered in a fashion, i.e., amounts, concentrations, schedules, course, vehicles and route of administration, consistent with good medical practice. Factors for consideration in this context include the particular disorder being treated, the clinical condition of the individual patient, the cause of the disorder, the site of delivery of the agent, the method of administration, the scheduling of administration, and other factors known to medical practitioners. Acceptable diluents, carriers, excipients and stabilizers are nontoxic to recipients at the dosages and concentrations employed, and include buffers such as phosphate, citrate and other organic acids; antioxidants including ascorbic acid and methionine; preservatives (such as octadecyldimethylbenzyl ammonium chloride; hexamethonium chloride; benzalkonium chloride, benzethonium chloride; phenol, butyl, ethanol, or benzylalcohol; alkyl parabens such as methyl or propyl paraben; catechol; resorcinol; cyclohexanol; 3-pentanol; and m-cresol); low molecular weight (less than about 10 residues) polypeptides; proteins, such as serum albumin, gelatin, or immunoglobulins; hydrophilic polymers such as polyvinylpyrrolidone; amino acids such as glycine, glutamine, asparagine, histidine, arginine, or lysine; monosaccharides, disaccharides and other carbohydrates including glucose, mannose, or dextrins; chelating agents such as EDTA; sugars such as lactose, sucrose, mannitol, trehalose or sorbitol; salt-forming counter-ions such as sodium; metal complexes (e.g., Zn-protein complexes); and / or non-ionic surfactants such as TWEEN™, including Tween 80, PLURONICS™ or polyethylene glycol (PEG), including PEG400. The active pharmaceutical ingredients may also be entrapped in microcapsules prepared, for example, by coacervation techniques or by interfacial polymerization, for example, hydroxymethylcellulose or gelatin-microcapsules and poly-(methyl methacrylate) microcapsules, respectively, in colloidal drug delivery systems (for example, liposomes, albumin microspheres, microemulsions, nano-particles and nanocapsules) or in macroemulsions. Such techniques are disclosed in Remington's Pharmaceutical Sciences 18th edition, (1995) Mack Publ. Co., Easton, Pa. Other examples of drug formulations can be found in Liberman, H. A. and Lachman, L., Eds., Pharmaceutical Dosage Forms, Marcel Decker, Vol 3, 2.sup.nd Ed., New York, N.Y.Tablets may comprise one or more pharmaceutically acceptable carrier, glidant, diluent, or excipient selected from microcrystalline cellulose, lactose, sodium starch glycolate, and magnesium stearate. Pharmaceutically acceptable glidants may be selected from silicon dioxide, powdered cellulose, microcrystalline cellulose, metallic stearates, sodium aluminosilicate, sodium benzoate, calcium carbonate, calcium silicate, corn starch, magnesium carbonate, asbestos free talc, stearowet C, starch, starch 1500, magnesium lauryl sulfate, magnesium oxide, and combinations thereof. The pharmaceutical formulations include those suitable for the administration routes detailed herein. The formulations may conveniently be presented in unit dosage form and may be prepared by any of the methods well known in the art of pharmacy. Techniques and formulations generally are found in Remington's Pharmaceutical Sciences 18.sup.th Ed. (1995) Mack Publishing Co., Easton, Pa. Such methods include the step of bringing into association the active ingredient with the carrier which constitutes one or more accessory ingredients. In general, the formulations are prepared by uniformly and intimately bringing into association the active ingredient with liquid carriers or finely divided solid carriers or both, and then, if necessary, shaping the product. Pharmaceutical compositions may be in the form of a sterile injectable preparation, such as a sterile injectable aqueous or oleaginous suspension. This suspension may be formulated according to the known art using those suitable dispersing or wetting agents and suspending agents which have been mentioned above. The sterile injectable preparation may be a solution or a suspension in a non-toxic parenterally acceptable diluent or solvent, such as a solution in 1,3-butanediol or prepared from a lyophilized powder. Among the acceptable vehicles and solvents that may be employed are water, Ringer's solution and isotonic sodium chloride solution. In addition, sterile fixed oils may conventionally be employed as a solvent or suspending medium. For this purpose, any bland fixed oil may be employed including synthetic mono- or diglycerides. In addition, fatty acids such as oleic acid may likewise be used in the preparation of injectables. Methods of Treating and Uses The solid forms and pharmaceutical compositions comprising them described herein are useful as Ras inhibitors. In one aspect, the solid forms and pharmaceutical compositions described herein are useful as KRas inhibitors. In another aspect, the solid forms and pharmaceutical compositions described herein are useful as NRas inhibitors. In another aspect, the solid forms and pharmaceutical compositions described herein are useful as HRas inhibitors.In one embodiment, the solid forms and pharmaceutical compositions described herein are useful as G12D Ras inhibitors, and as G12D KRas inhibitors. Provided herein are methods of contacting a cell, such as an ex vivo cell, with a solid forms and pharmaceutical compositions described herein, to inhibit Ras activity (e.g., KRas activity) in the cell. In another embodiment, the activity is mutant G12D KRas activity. Further provided herein are methods of treating a cancer comprising a KRas mutation, the method comprising administering to a patient having such cancer, an effective amount of a solid form or a pharmaceutical composition as described herein. In one embodiment, the KRas mutation is a KRasG12Dmutation. In one embodiment, the methods further comprise testing a sample (e.g., as set forth herein) from the patient before administration of a solid form or pharmaceutical composition thereof described herein for the absence or presence of a KRasG12Dmutation. In one such embodiment, a solid form or pharmaceutical composition described herein is administered to the patient after the patient sample is determined to be positive for (e.g., the presence of) a KRasG12Dmutation. The methods of treating a cancer described herein relate to the treatment of cancer such as acute myeloid leukemia, cancer in adolescents, childhood adrenocortical carcinoma, AIDS- related cancers (e.g. lymphoma and Kaposi’s sarcoma), anal cancer, appendix cancer, astrocytomas, atypical teratoid rhabdoid tumor, basal cell carcinoma, bile duct cancer, bladder cancer, bone cancer, brain stem glioma, brain tumor, breast cancer, bronchial tumors, Burkitt lymphoma, carcinoid tumor, embryonal tumors, germ cell tumor, primary lymphoma, cervical cancer, childhood cancers, chordoma, cardiac tumors, chronic lymphocytic leukemia (CLL), chronic myelogenous leukemia (CML), chronic myeloproliferative disorders, colon cancer, colorectal cancer, craniopharyngioma, cutaneous T-cell lymphoma, extrahepatic ductal carcinoma in situ (DCIS), embryonal tumors, CNS cancer, endometrial cancer, ependymoma, esophageal cancer, esthesioneuroblastoma, Ewing sarcoma, extracranial germ cell tumor, extragonadal germ cell tumor, eye cancer, fibrous histiocytoma of bone, gall bladder cancer, gastric cancer, gastrointestinal carcinoid tumor, gastrointestinal stromal tumors (GIST), germ cell tumor, gestational trophoblastic tumor, hairy cell leukemia, head and neck cancer, heart cancer, liver cancer, Hodgkin’s lymphoma, hypopharyngeal cancer, intraocular melanoma, islet cell tumors, pancreatic neuroendocrine tumors, kidney cancer, laryngeal cancer, lip and oral cavity cancer, lobular carcinoma in situ (LCIS), lung cancer, lymphoma, metastatic squamous neck cancer with occult primary, midline tract carcinoma, mouth cancer, multiple endocrine neoplasia syndromes, multiple myeloma / plasma cell neoplasm, mycosis fungoides,myelodysplastic syndromes, myelodysplastic / myeloproliferative neoplasms, multiple myeloma, Merkel cell carcinoma, malignant mesothelioma, malignant fibrous histiocytoma of bone and osteosarcoma, nasal cavity and paranasal sinus cancer, nasopharyngeal cancer, neuroblastoma, non-Hodgkin’s lymphoma, non-small cell lung cancer (NSCLC), oral cancer, oropharyngeal cancer, ovarian cancer, pancreatic cancer, papillomatosis, paraganglioma, parathyroid cancer, penile cancer, pharyngeal cancer, pleuropulmonary blastoma, primary central nervous system (CNS) lymphoma, prostate cancer, rectal cancer, transitional cell cancer, retinoblastoma, rhabdomyosarcoma, salivary gland cancer, skin cancer, small cell lung cancer, small intestine cancer, soft tissue sarcoma, T-Cell lymphoma, testicular cancer, throat cancer, thymoma and thymic carcinoma, thyroid cancer, transitional cell cancer of the renal pelvis and ureter, trophoblastic tumor, unusual cancers of childhood, urethral cancer, uterine sarcoma, vaginal cancer, vulvar cancer, or viral-induced cancer. In some embodiments, the cancer is a hematological cancer, pancreatic cancer, MYH associated polyposis, colorectal cancer or lung cancer. In one embodiment, the cancer is lung cancer, colorectal cancer, appendiceal cancer, or pancreatic cancer. In one embodiment, the cancer is pancreatic cancer, lung cancer, or colon cancer. The lung cancer can be adenocarcinoma, non-small cell lung cancer (NSCLC), or small cell lung cancer (SCLC). In one embodiment, the cancer is colorectal cancer. In another embodiment, the cancer is pancreatic cancer. In one embodiment, the cancer is lung adenocarcinoma. The methods provided herein can also comprise testing a sample from the patient before administration of a solid form or pharmaceutical composition described herein for the absence or presence of a KRasG12Dmutation. In one embodiment, a solid form or pharmaceutical composition is administered to the patient after the patient sample shows the presence of a KRasG12Dmutation. In one embodiment, a solid form or pharmaceutical composition described herein is not administered unless a patient sample comprises a KRasG12Dmutation. In one embodiment, the cancer is pancreatic cancer, lung cancer, or colorectal cancer. In another embodiment, the cancer is tissue agnostic (comprises a KRasG12Dmutation). In one such embodiment, the pancreatic cancer, lung cancer, or colorectal cancer comprises a KRasG12Dmutation. Further provided herein are methods of treating lung cancer comprising a KRasG12Dmutation in a patient having such a lung cancer. In one such embodiment, is a method (M1) of treating lung cancer comprising a KRasG12Dmutation in a patient having such a lung cancer, the method comprising administering to the patient an effective amount of a solid form orpharmaceutical composition described herein. In one embodiment, the lung cancer is non-small cell lung carcinoma (NSCLC). In one embodiment, lung cancer is adenocarcinoma, NSCLC, squamous-cell lung carcinoma (SCLC) or large-cell lung carcinoma. In one embodiment, the lung cancer is adenocarcinoma, NSCLC, or SCLC. In another embodiment, the lung cancer is small cell lung carcinoma. In still another embodiment, the lung cancer is glandular tumors, carcinoid tumors or undifferentiated carcinomas. The lung cancer can be stage I or II lung cancer. In one embodiment, the lung cancer is stage III or IV lung cancer. The methods provided herein include administration of the compound as a first-in-line (1L) therapy. Still further provided herein are methods of treating pancreatic cancer comprising a KRasG12Dmutation in a patient having such pancreatic cancer. In one such embodiment, is a method (M2) of pancreatic lung cancer comprising a KRasG12Dmutation in a patient having pancreatic cancer, the method comprising administering to the patient an effective amount of a solid form or pharmaceutical composition described herein. In one embodiment, the patient has been previously treated with radiation and one or more chemotherapy agents. In one embodiment, the pancreatic cancer is stage 0, I, or II. In another embodiment, the pancreatic cancer is stage III or stage IV. Still further provided herein are methods of treating colon cancer comprising a KRasG12Dmutation in a patient having such colon cancer. In one such embodiment, is a method (M3) of treating colon cancer comprising a KRasG12Dmutation in a patient having, the method comprising administering to the patient an effective amount of a solid form or pharmaceutical composition described herein to the patient. In one embodiment, the colon cancer is stage I or II. In another embodiment, the colon cancer is stage III or stage IV. In one embodiment of the methods M1, M2, and M3 as described herein, the method further comprises: (a) determining the absence or presence of a KRasG12D mutation in a sample taken from a patient with a suspected diagnosed cancer; and (b) administering to the patient an effective amount of a solid form or pharmaceutical composition described herein. Further provided herein are methods of treating tissue agnostic cancer comprising a KRasG12D mutation. In one embodiment of such methods, the method comprises: (a) determining the absence or presence of a KRasG12D mutation in a sample taken from a patient with a suspected diagnosed cancer; and (b) administering to the patient an effective amount of a solid form or pharmaceutical composition described herein.In one embodiment of such methods, the patient is diagnosed with a cancer described herein. In another embodiment of such methods, the sample is a tumor sample taken from the subject. In one such embodiment, the sample is taken before administration of any therapy. In another such embodiment, the sample is taken before administration of a solid form or pharmaceutical composition described herein and after administration of another chemotherapeutic agent. In another embodiment of such methods, the solid form or pharmaceutical composition described herein is administered as provided herein (e.g., orally or intravenously). Also provided herein is a solid form or pharmaceutical composition described herein for use as a therapeutically active substance. In one such embodiment, the solid form or pharmaceutical composition can be for the therapeutic treatment of a cancer comprising a KrasG12Dmutation. Further provided herein is a solid form or pharmaceutical composition described herein for the therapeutic and / or prophylactic treatment of a cancer comprising a KRasG12Dmutation. In one embodiment, the solid form or pharmaceutical composition is used in the preparation of a medicament for the therapeutic treatment of a cancer comprising a KRasG12Dmutation. Still further provided herein are uses of a solid form or pharmaceutical composition as described herein in the manufacture of a medicament for inhibiting tumor metastasis. Further provided herein are methods for inhibiting tumor metastasis, the method comprising administering to a patient having a tumor a therapeutically effective amount of a solid form or pharmaceutical composition described herein. In one embodiment, the inhibition is of a tumor comprising a KRasG12Dmutation. In another embodiment, inhibiting tumor metastasis in a patient described herein results in reduction of tumor size. In another embodiment, inhibiting tumor metastasis in a patient described herein results in stabilizing (e.g., no further growth) of tumor size. In another embodiment, inhibiting tumor metastasis in a patient described herein results in remission of the cancer and / or its symptoms. Further provided herein are methods for inhibiting proliferation of a cell population, the method comprising contacting the cell population with a solid form or pharmaceutical composition described herein. In one embodiment, the cell population is in a human patient. In another embodiment, the cell population comprises a KRasG12Dmutation. Further provided herein are methods of inhibiting KRas in a patient in need of therapy, comprising administering to the patient a therapeutically effective amount of a solid form or pharmaceutical composition described herein. In one embodiment, the KRas inhibited isKRasG12D. In another embodiment, inhibiting KRas results in decreased tumor size. In another embodiment, inhibiting KRas results in remission of the cancer and / or its symptoms. Further provided herein are methods for regulating activity of a KRas mutant protein, the method comprising reacting the mutant protein with a solid form or pharmaceutical composition described herein. In one embodiment, the mutant protein comprises a KRasG12Dmutation. In one embodiment, the activity of KRas is decreased after contacting with a solid form or pharmaceutical composition described herein. In another embodiment, the downregulation of activity of the KRas mutant protein treats a cancer described herein in a patient described herein. In another embodiment, the downregulation of activity of the KRas mutant protein results in decreased tumor size. In another embodiment, the downregulation of activity of the KRas mutant protein results in remission of a cancer described herein and / or its symptoms. In some embodiments, the methods provided herein comprise inhibiting KrasG12Dactivity in a cell by contacting said cell with an amount of a solid form or pharmaceutical composition described herein sufficient to inhibit the activity of KRasG12Din said cell. In some embodiments, the methods provided herein comprise inhibiting KRasG12Dactivity in a tissue by contacting said tissue with an amount of a solid form or pharmaceutical composition described herein sufficient to inhibit the activity of KRasG12Din said tissue. In some embodiments, the methods provided herein comprise inhibiting KRasG12Dactivity in a patient described herein by contacting said patient with an amount of a solid form or pharmaceutical composition described herein sufficient to inhibit the activity of KRasG12Din said patient. Further provided herein are methods for preparing a labeled KRasG12Dmutant protein, the method comprising reacting a KRasG12Dmutant protein with a labeled solid form or pharmaceutical composition described herein to result in the labeled KRasG12Dmutant protein. In one embodiment, the label is an imaging agent. In one embodiment, the labeled KRasG12Dcan be used to detect the absence or presence of G12D mutant KRas in a patient sample, thereby detecting the presence or absence of a cancer mediated by mutant KRas. Still further provided herein are methods of inhibiting Ras-mediated cell signaling. In one embodiment, the methods comprise contacting a cell with an effective amount of a solid form or pharmaceutical composition disclosed herein thereof. Inhibition of Ras-mediated signal transduction can be assessed and demonstrated by a wide variety of ways known in the art. Non-limiting examples include a showing of (a) a decrease in GTPase activity of Ras; (b) a decrease in GTP binding affinity or an increase in GDP binding affinity; (c) an increase in K off of GTP or a decrease in K off of GDP; (d) a decrease in the levels of signaling transductionmolecules downstream in the Ras pathway, such as a decrease in pMEK level; and / or (e) a decrease in binding of Ras complex to downstream signaling molecules including but not limited to Raf. Kits and commercially available assays can be utilized for determining one or more of the above. KRas mutations, including G12D mutants, have also been identified in hematological malignancies (e.g., cancers that affect blood, bone marrow, and / or lymph nodes). Accordingly, certain embodiments are directed to administration of a solid form or pharmaceutical composition described herein to a patient in need of treatment of a hematological malignancy. Such malignancies include but are not limited to leukemias and lymphomas. For example, the presently disclosed compounds can be used for treatment of diseases such as acute lymphoblastic leukemia (ALL), acute myelogenous leukemia (AML), chronic lymphocytic leukemia (CLL), small lymphocytic lymphoma (SLL), chronic myelogenous leukemia (CML), acute monocytic leukemia (AMoL) and / or other leukemias. In other embodiments, the compounds or a pharmaceutically acceptable salt thereof described herein are useful for treatment of lymphomas such as all subtypes of Hodgkin's lymphoma or non-Hodgkin's lymphoma. Determining whether a tumor or cancer comprises a KRasG12Dmutation can be undertaken by assessing the nucleotide sequence encoding the KRas protein, by assessing the amino acid sequence of the KRas protein, or by assessing the characteristics of a putative KRas mutant protein. The sequence of wild-type human KRas (e.g., Accession No. NP203524) is known in the art. Methods for detecting a mutation in a KRas nucleotide sequence are known by those of skill in the art. These methods include, but are not limited to, polymerase chain reaction- restriction fragment length polymorphism (PCR-RFLP) assays, polymerase chain reaction-single strand conformation polymorphism (PCR-SSCP) assays, real-time PCR assays, PCR sequencing, mutant allele-specific PCR amplification (MASA) assays, direct sequencing, primer extension reactions, electrophoresis, oligonucleotide ligation assays, hybridization assays, TaqMan assays, SNP genotyping assays, high resolution melting assays and microarray analyses. In some embodiments, samples are evaluated for G12d KRas mutations by real-time PCR. In real-time PCR, fluorescent probes specific for the KRas G12D mutation are used. When a mutation is present, the probe binds and fluorescence is detected. In some embodiments, the KRas G12D mutation is identified using a direct sequencing method of specific regions (e.g., exon 2 and / or exon 3) in the KRas gene. This technique will identify all possible mutations in the region sequenced.Methods for determining whether a tumor or cancer comprises a KRasG12Dmutation can use a variety of samples. In some embodiments, the sample is taken from a subject having a tumor or cancer. In some embodiments, the sample is a fresh tumor / cancer sample. In some embodiments, the sample is a frozen tumor / cancer sample. In some embodiments, the sample is a formalin-fixed paraffin-embedded sample. In some embodiments, the sample is processed to a cell lysate. In some embodiments, the sample is processed to DNA or RNA. Further provided herein are uses of a solid form or pharmaceutical composition described herein, in the manufacture of a medicament for treating cancer. In some embodiments, the medicament is formulated for oral administration. In some embodiments, the medicament is formulated for injection (e.g., IV administration). In some embodiments, the cancer comprises a KRasG12Dmutation. In some embodiments, the cancer is a hematological cancer, pancreatic cancer, MYH associated polyposis, colorectal cancer or lung cancer. In one embodiment, the cancer is lung cancer, colorectal cancer, or pancreatic cancer. In one embodiment, the cancer is colorectal cancer. In another embodiment, the cancer is pancreatic cancer. In some embodiments, the cancer is lung adenocarcinoma. In some embodiments, are uses of a compound or stereoisomer, atropisomer, tautomer, or pharmaceutically acceptable salt thereof described herein, in the manufacture of a medicament for inhibiting tumor metastasis. Combination Therapies The solid forms and pharmaceutical compositions described herein may be employed alone or in combination with other therapeutic agents for the treatment of a disease or disorder described herein. The second agent of the pharmaceutical combination formulation or dosing regimen preferably has complementary activities to the solid form or pharmaceutical composition described herein such that they do not adversely affect each other. The combination therapy may provide "synergy" and prove "synergistic", i.e., the effect achieved when the active ingredients used together is greater than the sum of the effects that results from using them separately. The combination therapy may be administered as a simultaneous or sequential regimen. When administered sequentially, the combination may be administered in two or more administrations. The combined administration includes co-administration, using separate formulations or a single pharmaceutical formulation, and consecutive administration in either order, wherein preferably there is a time period while both (or all) active agents simultaneously exert their biological activities. Combination therapies herein comprise the administration of a solid form or pharmaceutical composition described herein, and the use of at least one other treatment method.The amounts of the solid form or pharmaceutical composition described herein and the other pharmaceutically active agent(s) and the relative timings of administration will be selected in order to achieve the desired combined therapeutic effect. In various embodiments of the method, the additional therapeutic agent is an epidermal growth factor receptor (EGFR) inhibitor, phosphatidylinositol kinase (PI3K) inhibitor, insulin- like growth factor receptor (IGF1R) inhibitor, a Janus kinase (JAK) inhibitor, a Met kinase inhibitor, a SRC family kinase inhibitor, a mitogen-activated protein kinase (MEK) inhibitor, an extracellular-signal-regulated kinase (ERK) inhibitor, a topoisomerase inhibitor (such as irinotecan, or such as etoposide, or such as doxorubicin), a taxane (such as anti-microtubule agents including paclitaxel and docetaxel), an anti-metabolite agent (such as 5-FU or such as gemcitabine), or an alkylating agent (such as cisplatin or such as cyclophosphamide), or a taxane. In some embodiments, the additional therapeutic agent is an epidermal growth factor receptor (EGFR) inhibitor, such as Erlotinib or such as Afatinib. In some embodiments the additional therapeutic agent is gefitinib, osimertinib, or dacomitinib. In some embodiments the additional therapeutic agent is a monoclonal antibody such as cetuximab (Erbitux) or panitumumab (Vectibix). In some embodiments the GFR inhibitor is a dual or pan- HER inhibitor. In other embodiments, the additional therapeutic agent is a phosphatidylinositol-3- kinase (PI3K) inhibitor, such as GDC-0077, GDC-0941, MLN1117, BYL719 (Alpelisib) or BKM120 (Buparlisib). GDC-0941 refers to 2-(1H-indazol-4-yl)-6-(4- methanesulfonyl- piperazin-1- ylmethyl)-4-morpholin-4-yl-thieno[3,2-d]pyrimidine or a salt thereof (e.g., bismesylate salt). In still other embodiments, the additional therapeutic agent is an insulin-like growth factor receptor (IGF1R) inhibitor. For example, in some embodiments the insulin-like growth factor receptor (IGF1R) inhibitor is NVP-AEW541. In other embodiments, the additional therapeutic agent is IGOSI-906 (Linsitinib), BMS-754807, or in other embodiments the additional therapeutic agent is a neutralizing monoclonal antibody specific to IGF1R such as AMG-479 (ganitumab), CP-751,871 (figitumumab), IMC-A12 (cixutumumab), MK-0646 (dalotuzumab), or R-1507 (robatumumab). In some other embodiments, the additional therapeutic agent is a Janus kinase (JAK) inhibitor. In some embodiments, the additional therapeutic agent is CYT387, GLPG0634, Baricitinib, Lestaurtinib, momelotinib, Pacritinib, Ruxolitinib, or TG101348. In some other embodiments, the additional therapeutic agent is an anti-glypican 3 antibody. In some embodiments, the anti-glypican 3 antibody is codrituzumab.In some other embodiments, the additional therapeutic agent is an antibody drug conjugate (ADC). In some embodiments, the ADC is polatuzumab vedotin, RG7986, RG7882, RG6109, or RO7172369. In some other embodiments, the additional therapeutic agent is an MDM2 antagonist. In some embodiments, the MDM2 antagonist is idasanutlin. In some other embodiments, the additional therapeutic agent is an agonistic antibody against CD40. In some embodiments, the agonistic antibody against CD40 is selicrelumab (RG7876). In some other embodiments, the additional therapeutic agent is a bispecific antibody. In some embodiments, the bispecific antibody is RG7828 (BTCT4465A), RG7802, RG7386 (FAP-DR5), RG6160, RG6026, ERY974, or anti-HER2 / CD3. In some other embodiments, the additional therapeutic agent is a targeted immunocytokine. In some embodiments, the targeted immunocytokine is RG7813 or RG7461. In some other embodiments, the additional therapeutic agent is an antibody targeting colony stimulating factor-1 receptor (CSF-1R). In some embodiments, the CSF-1R antibody is emactuzumab. In some other embodiments, the additional therapeutic agent is a personalized cancer vaccine. In some embodiments, the personalized cancer vaccine is RG6180. In some other embodiments, the additional therapeutic agent is an inhibitor of BET (bromodomain and extraterminal family) proteins (BRD2 / 3 / 4 / T). In some embodiments, the BET inhibitor is RG6146. In some other embodiments, the additional therapeutic agent is an antibody designed to bind to TIGIT. In some embodiments, the anti-TIGIT antibody is RG6058 (MTIG7192A). In some other embodiments, the additional therapeutic agent is a selective estrogen receptor degrader (SERD). In some other embodiments, the SERD is RG6047 (GDC-0927) or RG6171 (GDC-9545, giredestrant). In some other embodiments the additional therapeutic agent is an MET kinase inhibitor, such as Crizotinib, tivantinib, AMG337, cabozantinib, or foretinib. In other embodiments the additional therapeutic agent is a neutralizing monoclonal antibody to MET such as onartuzumab. In more embodiments, the additional therapeutic agent is a SRC family non-receptor tyrosine kinase inhibitor. For example, in some embodiments the additional therapeutic agent is an inhibitor of the subfamily of SRC family non-receptor tyrosine kinases. Exemplary inhibitorsin this respect include Dasatinib. Other examples in this regard include Ponatinib, saracatinib, and bosutinib. In yet other embodiments, the additional therapeutic agent is a mitogen-activated protein kinase (MEK) inhibitor. In some of these embodiments, the mitogen-activated protein kinase (MEK) inhibitor is trametinib, selumetinib, COTELLIC® (cobimetinib), PD0325901, or RO5126766. In other embodiments the MEK inhibitor is GSK-1120212, also known as trametinib. In yet other embodiments, the additional therapeutic agent is an extracellular-signal- regulated kinase (ERK) inhibitor. In some of these embodiments, the mitogen-activated protein kinase (MEK) inhibitor is SCH722984 or GDC-0994. In other embodiments the protein kinase inhibitor is taselisib, ipatasertib, GDC-0575, GDC-5573 (HM95573), RG6114 (GDC-0077), CKI27, Afatinib, Axitinib, Atezolizumab, Bevacizumab, Bostutinib, Cetuximab, Crizotinib, Dasatinib, Erlotinib, Fostamatinib, Gefitinib, Imatinib, Lapatinib, Lenvatinib, Ibrutinib, Nilotinib, Panitumumab, Pazopanib, Pegaptanib, Ranibizumab, Ruxolitinib, Sorafenib, Sunitinib, SU6656, Trastuzumab, Tofacitinib, Vandetanib, or Vemurafenib. In still more embodiments, the additional therapeutic agent is a topoisomerase inhibitor. In some of these embodiments, the topoisomerase inhibitor is Irinotecan. In some more embodiments, the additional therapeutic agent is a taxane. Exemplary taxanes include Taxol and Docetaxel. In addition to the above additional therapeutic agents, other chemotherapeutics are presently known in the art and can be used in combination with the solid forms and pharmaceutical compositions described herein. In some embodiments, the chemotherapeutic is selected from the group consisting of mitotic inhibitors, alkylating agents, anti-metabolites, intercalating antibiotics, growth factor inhibitors, cell cycle inhibitors, enzymes, topoisomerase inhibitors, biological response modifiers, anti-hormones, angiogenesis inhibitors, and anti- androgens. Non-limiting examples are chemotherapeutic agents, cytotoxic agents, and non-peptide small molecules such as Gleevec® (Imatinib Mesylate), Velcade® (bortezomib), Casodex (bicalutamide), Iressa® (gefitinib), and Adriamycin as well as a host of chemotherapeutic agents. Non-limiting examples of chemotherapeutic agents include alkylating agents such as thiotepa and cyclosphosphamide (CYTOXAN™); alkyl sulfonates such as busulfan, improsulfan and piposulfan; aziridines such as benzodopa, carboquone, meturedopa, and uredopa; ethylenimines and methyl melamines including altretamine, triethylenemelamine, triethylenephosphoramide, triethylenethiophosphaoramide and trimethylol melamine; nitrogenmustards such as chlorambucil, chlornaphazine, cyclophosphamide, estramustine, ifosfamide, mechlorethamine, mechlorethamine oxide hydrochloride, melphalan, novembichin, phenesterine, prednimustine, trofosfamide, uracil mustard; nitrosoureas such as carmustine, chlorozotocin, fotemustine, lomustine, nimustine, ranimustine; antibiotics such as aclacinomysins, actinomycin, authramycin, azaserine, bleomycins, cactinomycin, calicheamicin, carabicin, carminomycin, carzinophilin, Casodex™, chromomycins, dactinomycin, daunorubicin, detorubicin, 6-diazo-5-oxo- L-norleucine, doxorubicin, epirubicin, esorubicin, idarubicin, marcellomycin, mitomycins, mycophenolic acid, nogalamycin, olivomycins, peplomycin, potfiromycin, puromycin, quelamycin, rodorubicin, streptonigrin, streptozocin, tubercidin, ubenimex, zinostatin, zorubicin; anti-metabolites such as methotrexate and 5- fluorouracil (5-FU); folic acid analogues such as denopterin, methotrexate, pteropterin, trimetrexate; purine analogs such as fludarabine, 6-mercaptopurine, thiamiprine, thioguanine; pyrimidine analogs such as ancitabine, azacitidine, 6-azauridine, carmofur, cytarabine, dideoxyuridine, doxifluridine, enocitabine, floxuridine, androgens such as calusterone, dromostanolone propionate, epitiostanol, mepitiostane, testolactone; anti-adrenals such as aminoglutethimide, mitotane, trilostane; folic acid replenisher such as frolinic acid; aceglatone; aldophosphamide glycoside; aminolevulinic acid; amsacrine; bestrabucil; bisantrene; edatraxate; defofamine; demecolcine; diaziquone; elfomithine; elliptinium acetate; etoglucid; gallium nitrate; hydroxyurea; lentinan; lonidamine; mitoguazone; mitoxantrone; mopidamol; nitracrine; pentostatin; phenamet; pirarubicin; podophyllinic acid; 2-ethylhydrazide; procarbazine; polysaccharide K; razoxane; sizofiran; spirogermanium; tenuazonic acid; triaziquone; 2,2',2''- trichlorotriethylamine; urethan; vindesine; dacarbazine; mannomustine; mitobronitol; mitolactol; pipobroman; gacytosine; arabinoside (“Ara-C”); cyclophosphamide; thiotepa; taxanes, e.g. paclitaxel (TAXOLTM, Bristol-Myers Squibb Oncology, Princeton, N.J.) and docetaxel (TAXOTERETM, Rhone-Poulenc Rorer, Antony, France); retinoic acid; esperamicins; capecitabine; and pharmaceutically acceptable salts, acids or derivatives of any of the above. Also included as suitable chemotherapeutic cell conditioners are anti-hormonal agents that act to regulate or inhibit hormone action on tumors such as anti-estrogens including for example tamoxifen, (Nolvadex™), raloxifene, aromatase inhibiting 4(5)-imidazoles, 4- hydroxytamoxifen, trioxifene, keoxifene, LY 117018, onapristone, and toremifene (Fareston); anti-androgens such as flutamide, nilutamide, bicalutamide, leuprolide, and goserelin; chlorambucil; gemcitabine; 6-thioguanine; mercaptopurine; methotrexate; platinum analogs such as cisplatin and carboplatin; vinblastine; platinum; etoposide (VP-16); ifosfamide; mitomycin C; mitoxantrone; vincristine; vinorelbine; navelbine; novantrone; teniposide; daunomycin;aminopterin; Xeloda®; ibandronate; camptothecin-11 (CPT-11); topoisomerase inhibitor RFS 2000; and difluoromethylornithine (DFMO). Where desired, the compounds or pharmaceutical acceptable salts thereof or pharmaceutical composition as described herein can be used in combination with commonly prescribed anti-cancer drugs such as Herceptin®, Avastin®, Gazyva®, Tecentriq®, Alecensa®, Perjeta®, Venclexta™, Erbitux®, Rituxan®, Taxol®, Arimidex®, Taxotere®, ABVD, AVICINE, Abagovomab, Acridine carboxamide, Adecatumumab, 17-N-Allylamino-17-demethoxygeldanamycin, Alpharadin, Alvocidib, 3- Aminopyridine-2-carboxaldehyde thiosemicarbazone, Amonafide, Anthracenedione, Anti-CD22 immunotoxins, Antineoplastic, Antitumorigenic herbs, Apaziquone, Atiprimod, Azathioprine, Belotecan, Bendamustine, BIBW 2992, Biricodar, Brostallicin, Bryostatin, Buthionine sulfoximine, CBV (chemotherapy), Calyculin, cell-cycle nonspecific antineoplastic agents, Dichloroacetic acid, Discodermolide, Elsamitrucin, Enocitabine, Epothilone, Eribulin, Everolimus, Exatecan, Exisulind, Ferruginol, Forodesine, Fosfestrol, ICE chemotherapy regimen, IT-101, Imexon, Imiquimod, Indolocarbazole, Irofulven, Laniquidar, Larotaxel, Lenalidomide, Lucanthone, Lurtotecan, Mafosfamide, Mitozolomide, Nafoxidine, Nedaplatin, Olaparib, Ortataxel, PAC-1, Pawpaw, Pixantrone, Proteasome inhibitor, Rebeccamycin, Resiquimod, Rubitecan, SN-38, Salinosporamide A, Sapacitabine, Stanford V, Swainsonine, Talaporfin, Tariquidar, Tegafur-uracil, Temodar, Tesetaxel, Triplatin tetranitrate, Tris(2- chloroethyl)amine, Troxacitabine, Uramustine, Vadimezan, Vinflunine, ZD6126 or Zosuquidar. The exact method for administering the solid form or pharmaceutical composition and the additional therapeutic agent will be apparent to one of ordinary skill in the art. In some exemplary embodiments, the solid form or pharmaceutical composition thereof and the additional therapeutic agent are co-administered. In other embodiments, the solid form or pharmaceutical composition and the additional therapeutic agent are separately administered. In some embodiments, the solid form or pharmaceutical composition and the additional therapeutic agent are administered with the second agent simultaneously or separately. This administration in combination can include simultaneous administration of the two agents in the same dosage form, simultaneous administration in separate dosage forms, and separate administration. That is, the solid form or pharmaceutical composition and any of the additional therapeutic agents described herein can be formulated together in the same dosage form and administered simultaneously. Alternatively, the solid form or pharmaceutical composition and any of the additional therapeutic agents described herein can be simultaneously administered, wherein both the agents are present in separate formulations. In another alternative, the solid form or pharmaceutical composition can be administered just followed by any of the additionaltherapeutic agents described herein, or vice versa. In some embodiments of the separate administration protocol, the solid form or pharmaceutical composition and any of the additional therapeutic agents described herein are administered a few minutes apart, or a few hours apart, or a few days apart. Articles of Manufacture Also provided herein are articles of manufacture, or “kits”, containing materials useful for the treatment of a cancer described herein. In one embodiment, the kit comprises a container comprising a solid form or pharmaceutical composition described herein. The kit may further comprise a label or package insert on or associated with the container. Suitable containers include, for example, bottles, vials, syringes, blister packs, etc. The container may be formed from a variety of materials such as glass or plastic. The container may hold a solid form or pharmaceutical composition described herein which is effective for treating the condition and may have a sterile access port (for example, the container may be an intravenous solution bag or a vial having a stopper pierceable by a hypodermic injection needle). At least one active agent in the container is a solid form or pharmaceutical composition described herein. Alternatively, or additionally, the article of manufacture may further comprise a second container comprising a pharmaceutical diluent, such as bacteriostatic water for injection (BWFI), phosphate-buffered saline, Ringer's solution or dextrose solution. It may further include other materials desirable from a commercial and user standpoint, including other buffers, diluents, filters, needles, and syringes. In another embodiment, the kits are suitable for the delivery of solid oral forms of a solid form or pharmaceutical composition described herein, such as tablets or capsules. Such a kit can include a number of unit dosages. An example of such a kit is a “blister pack.” Blister packs are well known in the packaging industry and are widely used for packaging pharmaceutical unit dosage forms. ENUMERATED EMBODIMENTS Embodiment 1. An anhydrous crystalline form comprising a compound of Formula (I):(I).Embodiment 2. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form J characterized by an XRPD pattern substantially as set forth in Figure 1. Embodiment 3. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form J characterized by a thermal gravimetric analysis (TGA) thermogram showing about 2.6% weight loss up to 180 °C. Embodiment 4. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form J characterized by a differential scanning calorimetry (DSC) thermogram comprising at least one endothermic peak at about 110 °C, about 138 °C, or about 178 °C. Embodiment 5. The anhydrous crystalline form of Embodiment 4, wherein the anhydrous crystalline form is Form J characterized by a DSC thermogram comprising endothermic peaks at about 110 °C, about 138 °C, and about 178 °C. Embodiment 6. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form J is characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 1; b. a TGA thermogram showing about 2.6% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 110 °C, about 138 °C, or about 178 °C. Embodiment 7. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form J characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 1; b. a TGA thermogram showing about 2.6% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 110 °C, about 138 °C, and about 178 °C. Embodiment 8. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form O characterized by an XRPD pattern substantially as set forth in Figure 2. Embodiment 9. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form O characterized by a TGA thermogram showing about 3.1% weight loss up to 180 °C. Embodiment 10. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form O characterized by a DSC thermogram comprising at least one endothermic peak at about 70 °C or about 195 °C.Embodiment 11. The anhydrous crystalline form of Embodiment 10, wherein the anhydrous crystalline form is Form O characterized by a DSC thermogram comprising endothermic peaks at about 70 °C and about 195 °C. Embodiment 12. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form O characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 2; b. a TGA thermogram showing about 3.1% weight loss up to 180 °C; and c. a DSC thermogram comprising at least one endothermic peak at about 70 °C or about 195 °C. Embodiment 13. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form O characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 2; b. a TGA thermogram showing about 3.1% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 70 °C and about 195 °C. Embodiment 14. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form U is characterized by an XRPD pattern substantially as set forth in Figure 3. Embodiment 15. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form U characterized by a TGA thermogram showing about 1.3% weight loss up to 190 °C. Embodiment 16. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form U characterized by a DSC thermogram comprising an endothermic peak at about 205 °C. Embodiment 17. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form U characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 3; b. a TGA thermogram showing about 1.3% weight loss up to 190 °C; and c. a DSC thermogram comprising an endothermic peak at about 205 °C. Embodiment 18. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form AC characterized by an XRPD pattern substantially as set forth in Figure 4. Embodiment 19. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form AC characterized by a TGA thermogram showing about 2.3% weight loss up to 160 °C.Embodiment 20. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form AC characterized by a DSC thermogram comprising an endothermic peak at about 163 °C. Embodiment 21. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form AC is characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 4; b. a TGA thermogram showing about 2.3% weight loss up to 160 °C; and c. a DSC thermogram comprising an endothermic peak at about 163 °C. Embodiment 22. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form AG characterized by an XRPD pattern comprising characteristic peaks at approximately 19.3 ± 0.2, 13.1 ± 0.2, and 15.4 ± 0.2 degrees 2θ. Embodiment 23. The anhydrous crystalline form of Embodiment 22, wherein the XRPD pattern further comprises at least one additional characteristic peak selected from the group consisting of: approximately 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. Embodiment 24. The anhydrous crystalline form of Embodiment 22, wherein the XRPD pattern further comprises characteristic peaks at approximately 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. Embodiment 25. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form AG characterized by an XRPD pattern comprising at least 15 peaks as set forth in Table 39. Embodiment 26. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form AG characterized by an XRPD pattern substantially as set forth in Figure 5A. Embodiment 27. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form AG characterized by a TGA thermogram showing about 1.1% weight loss up to 180 °C. Embodiment 28. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form AG characterized by a TGA thermogram substantially as set forth in Figure 5B. Embodiment 29. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form AG characterized by a DSC thermogram comprising an endothermic peak at about 219 °C.Embodiment 30. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form AG characterized by a DSC thermogram substantially as set forth in Figure 5B. Embodiment 31. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form AG is characterized by a dynamic vapor sorption (DVS) plot substantially as set forth in Figure 5C. Embodiment 32. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form AG characterized by a scanning electron microscopy (SEM) micrograph substantially as set forth in Figure 5D. Embodiment 33. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form AG characterized by two or more of: a. an XRPD pattern comprising characteristic peaks at approximately 19.3 ± 0.2, 13.1 ± 0.2, and 15.4 ± 0.2 degrees 2θ; b. a TGA thermogram showing about 1.1% weight loss at 180 °C; c. a DSC thermogram comprising an endothermic peak at about 219 °C; d. a dynamic vapor sorption (DVS) plot substantially as set forth in Figure 5C; and e. a scanning electron microscopy (SEM) micrograph substantially as set forth in Figure 5D. Embodiment 34. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is Form AG characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 5A; b. a TGA thermogram substantially as set forth in Figure 5B; c. a DSC thermogram substantially as set forth in Figure 5B; d. a DVS plot substantially as set forth in Figure 5C; and e. a SEM micrograph substantially as set forth in Figure 5D. Embodiment 35. A pharmaceutical composition comprising the anhydrous crystalline form of any one of Embodiments 1-34 and at least one pharmaceutically acceptable excipient. Embodiment 36. A method of treating cancer in a subject comprising administering to the subject a therapeutically effective amount of the anhydrous crystalline form of any one of Embodiments 1-34 or the pharmaceutical composition of Embodiment 35. Embodiment 37. The method of Embodiment 36, wherein the cancer is characterized by a KRas mutation. Embodiment 38. The method of Embodiment 37, wherein the KRas mutation corresponds to a KRasG12Dmutation.Embodiment 39. The method of any one of Embodiments 36-38, further comprising testing a sample from the subject for the absence or presence of a KRasG12Dmutation before administration. Embodiment 40. The method of Embodiment 39, wherein the crystalline form is administered to the patient after the patient sample shows the presence of a KRasG12Dmutation. Embodiment 41. The method of any one of Embodiments 36-40, wherein the cancer is tissue agnostic. Embodiment 42. The method of any one of Embodiments 36-40, wherein the cancer is pancreatic cancer, lung cancer, or colorectal cancer. Embodiment 43. The method of Embodiment 42, wherein the cancer is lung cancer. Embodiment 44. The method of Embodiment 43, wherein the lung cancer is lung adenocarcinoma, NSCLC, or SCLC. Embodiment 45. The method of Embodiment 42, wherein the cancer is pancreatic cancer. Embodiment 46. The method of Embodiment 42, wherein the cancer is colorectal cancer. Embodiment 47. The method of any one of Embodiments 36-46, further comprising administering at least one additional therapeutic agent. Embodiment 48. The method of Embodiment 47, wherein the at least one additional therapeutic agent is selected from an epidermal growth factor receptor (EGFR) inhibitor, phosphatidylinositol kinase (PI3K) inhibitor, insulin-like growth factor receptor (IGF1R) inhibitor, a Janus kinase (JAK) inhibitor, a Met kinase inhibitor, a SRC family kinase inhibitor, a mitogen-activated protein kinase (MEK) inhibitor, an extracellular-signal-regulated kinase (ERK) inhibitor, a topoisomerase inhibitor, a taxane, an anti-metabolite agent, or an alkylating agent. Embodiment 49. A method for regulating activity of a KRas mutant protein comprising reacting the mutant protein with the anhydrous crystalline form of any one of Embodiments 1-34 or the pharmaceutical composition of Embodiment 35. Embodiment 50. A method for inhibiting proliferation of a cell population comprising contacting the cell population with the anhydrous crystalline form of any one of Embodiments 1-34 or the pharmaceutical composition of Embodiment 35. Embodiment 51. The method of Embodiment 50, wherein the inhibition of proliferation is measured as a decrease in cell viability of the cell population.Embodiment 52. A method for inhibiting tumor metastasis in a subject comprising administering to the subject a therapeutically effective amount of the anhydrous crystalline form of any one of Embodiments 1-34 or the pharmaceutical composition of Embodiment 35. Embodiment 53. An anhydrous crystalline form of a compound of Formula (I) according to any one of Embodiments 1-34 or a pharmaceutical composition of Embodiment 35 for use in treating cancer. Embodiment 54. Use of the anhydrous crystalline form of a compound of Formula (I) according to any one of Embodiments 1-34 or the pharmaceutical composition of Embodiment 35 for treating cancer. Embodiment 55. Use of the anhydrous crystalline form of a compound of Formula (I) according to any one of Embodiments 1-34 or the pharmaceutical composition of Embodiment 35 in the manufacture of a medicament for treating cancer. Embodiment II-1. A solid form of a compound of Formula (I):(I), wherein the solid form is: crystalline polymorphic Form J; crystalline polymorphic Form N; crystalline polymorphic Form O; or crystalline polymorphic Form AG. Embodiment II-2. The solid form of Embodiment II-1, wherein the solid form is crystalline polymorphic Form AG. Embodiment II-3. The solid form of Embodiment II-2, wherein the solid form is Form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 degrees 2θ, and at least two peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. Embodiment II-4. The solid form of Embodiment II-2 or II-3, wherein the solid form is Form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 degrees 2θ, and at least three peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ.Embodiment II-5. The solid form of any one of Embodiments II-2 to II-4, wherein the solid form is Form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 degrees 2θ, and at least four peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. Embodiment II-6. The solid form of any one of Embodiments II-2 to II-5, wherein the solid form is Form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 degrees 2θ, and at least five, at least six, at least seven, or at least eight peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. Embodiment II-7. The solid form of Embodiments II-2 or II-3, wherein the solid form is Form AG characterized by an XRPD pattern comprising: a peak at approximately 13.1 ± 0.2 degrees 2θ and a peak at approximately 19.3 ± 0.2 degrees 2θ; and at least one peak selected from the group consisting of 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. Embodiment II-8. The solid form of any one of Embodiments II-2 to II-4 or II-7, wherein the solid form is Form AG characterized by an XRPD pattern comprising: a peak at approximately 13.1 ± 0.2 degrees 2θ and a peak at approximately 19.3 ± 0.2 degrees 2θ; and at least two peaks selected from the group consisting of 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. Embodiment II-9. The solid form of any one of Embodiments II-2 to II-5, II-7, or II-8, wherein the solid form is Form AG characterized by an XRPD pattern comprising: a peak at approximately 13.1 ± 0.2 degrees 2θ and a peak at approximately 19.3 ± 0.2 degrees 2θ; and at least three peaks selected from the group consisting of 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. Embodiment II-10. The solid form of any one of Embodiments II-2 to II-9, wherein the solid form is Form AG characterized by an XRPD pattern comprising: a peak at approximately 13.1 ± 0.2 degrees 2θ and a peak at approximately 19.3 ± 0.2 degrees 2θ; andat least four, at least five, at least six, or at least seven peaks selected from the group consisting of 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. Embodiment II-11. The solid form of Embodiments II-2 or II-3, wherein the solid form is Form AG characterized by an XRPD pattern comprising: at least two peaks selected from the group consisting of 13.1 ± 0.2, 19.3 ± 0.2, and 15.4 ± 0.2 degrees 2θ; and at least one peak selected from the group consisting of 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. Embodiment II-12. The solid form of Embodiment II-2, wherein the solid form is Form AG characterized by an XRPD pattern comprising characteristic peaks at approximately 19.3 ± 0.2, 13.1 ± 0.2, and 15.4 ± 0.2 degrees 2θ. Embodiment II-13. The solid form of Embodiment II-12, wherein the XRPD pattern further comprises at least one additional characteristic peak selected from the group consisting of: approximately 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. Embodiment II-14. The solid form of Embodiment II-12, wherein the XRPD pattern further comprises characteristic peaks at approximately 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. Embodiment II-15. The solid form of any one of Embodiments II-2 to II-8, wherein the solid form is Form AG characterized by an XRPD pattern comprising: peaks at approximately 13.1 ± 0.2, 19.3 ± 0.2, and 15.4 ± 0.2 degrees 2θ; and at least two, at least three, at least four, or at least five peaks selected from the group consisting of 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. Embodiment II-16. The solid form of any one of Embodiments II-2 to II-9, wherein the solid form is Form AG characterized by an XRPD pattern comprising: peaks at approximately 13.1 ± 0.2, 19.3 ± 0.2, 15.4 ± 0.2 degrees 2θ, and 18.5 ± 0.2 degrees 2θ; and one or more peaks at approximately 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, or 10.7 ± 0.2 degrees 2θ. Embodiment II-17. The solid form of any one of Embodiments II-2 to II-16, wherein the solid form is Form AG characterized by a TGA thermogram showing about 1.1% weight loss up to 180 °C.Embodiment II-18. The solid form of any one of Embodiments II-2 to II-17, wherein the solid form is Form AG characterized by a DSC thermogram comprising an endothermic peak at about 219 °C. Embodiment II-19. The solid form of any one of Embodiments II-2 to II-18, wherein the solid form is Form AG characterized by two or more of: a. an XRPD pattern comprising characteristic peaks at approximately 19.3 ± 0.2, 13.1 ± 0.2, and 15.4 ± 0.2 degrees 2θ; b. a TGA thermogram showing about 1.1% weight loss at 180 °C; and c. a DSC thermogram comprising an endothermic peak at about 219 °C; Embodiment II-20. The solid form of any one of Embodiments II-2 to II-19, wherein the XRPD spectrum is obtained using a Cu Kα source. Embodiment II-21. The solid form of Embodiment II-1, wherein the solid form is crystalline polymorphic Form J. Embodiment II-22. The solid form of Embodiment II-21, wherein the solid form is Form J characterized by an XRPD diffraction pattern comprising at least two XRPD peaks selected from the group consisting of approximately 16.4 ± 0.2, 6.8 ± 0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.42 ±0.2, 13.7 ±0.2, 8.8 ±0.2, and 19.7 ±0.2 degrees 2θ. Embodiment II-23. The solid form of Embodiment II-21, wherein the solid form is Form J characterized by an XRPD diffraction pattern comprising at least three XRPD peaks selected from the group consisting of about 16.4 ±0.2, 6.8 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ± 0.2, 8.4 ±0.2, 13.7 ±0.2, 8.8 ±0.2, and 19.7 ±0.2 degrees 2θ. Embodiment II-24. The solid form of any one of Embodiment II-21 to II-23, wherein the solid form is Form J characterized by an XRPD diffraction pattern comprising at least four XRPD peaks selected from the group consisting of about 16.4 ±0.2, 6.8 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.4 ±0.2, 13.7 ±0.2, 8.8 ±0.2, and 19.7 ±0.2 degrees 2θ. Embodiment II-25. The solid form of any one of Embodiments II-21 to II-24, wherein the solid form is Form J characterized by an XRPD diffraction pattern comprising: XRPD peaks at 6.8±0.2 degrees 2θ and 8.8±0.2 degrees 2θ; and at least two XRPD peaks selected from the group consisting of about 16.4 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.4 ±0.2, 13.7 ±0.2, and 19.7 ±0.2 degrees 2θ. Embodiment II-26. The solid form of any one of Embodiments II-21 to II-25, wherein the solid form is Form J characterized by an XRPD diffraction pattern comprising: XRPD peaks at 6.8±0.2 degrees 2θ and 8.8±0.2 degrees 2θ; andat least three XRPD peaks selected from the group consisting of about 16.4 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.4 ±0.2, 13.7 ±0.2, and 19.7 ±0.2 degrees 2θ. Embodiment II-27. The solid form of any one of Embodiments II-21 to II-26, wherein the solid form is Form J characterized by an XRPD diffraction pattern comprising: XRPD peaks at 6.8±0.2 degrees 2θ and 8.8±0.2 degrees 2θ; and at least four XRPD peaks selected from the group consisting of about 16.4 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.4 ±0.2, 13.7 ±0.2, and 19.7 ±0.2 degrees 2θ. Embodiment II-28. The solid form of any one of Embodiments II-21 to II-27, wherein the solid form is Form J characterized by an XRPD diffraction pattern comprising the XRPD peaks 16.4 ±0.2, 6.8 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.4 ±0.2, 13.7 ±0.2, 8.8 ±0.2, and 19.7 ±0.2 degrees 2θ. Embodiment II-29. The solid form of any one of Embodiments II-21 to II-28, wherein the solid form is Form J characterized by a thermal gravimetric analysis (TGA) thermogram showing about 2.6% weight loss up to 180 °C. Embodiment II-30. The solid form of any one of Embodiments II-21 to II-29, wherein the solid form is Form J characterized by a differential scanning calorimetry (DSC) thermogram comprising at least one endothermic peak at about 110 °C, about 138 °C, or about 178 °C. Embodiment II-31. The solid form of any one of Embodiments II-21 to II-30, wherein the solid form is Form J characterized by a differential DSC thermogram comprising endothermic peaks at about 110 °C, about 138 °C, and about 178 °C. Embodiment II-32. The solid form of any one of Embodiments II-21 to II-31, wherein the solid form is Form J characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 1; b. a TGA thermogram showing about 2.6% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 110 °C, about 138 °C, and about 178 °C. Embodiment II-33. The solid form of any one of Embodiments II-21 to II-32, wherein the XRPD spectrum is obtained using a Cu Kα source. Embodiment II-34. The solid form of Embodiment II-1, wherein the solid form is crystalline polymorphic Form O. Embodiment II-35. The solid form of Embodiment II-34, wherein the solid form is characterized by an XRPD diffraction pattern comprising at least two XRPD peaks selectedfrom the group consisting of approximately 15.1 ±0.2, 19.7 ±0.2, 9.3 ±0.2, 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2, and 15.9 ±0.2 degrees 2θ. Embodiment II-36. The solid form of Embodiment II-34 or II-35, wherein the solid form is characterized by an XRPD diffraction pattern comprising: XRPD peaks at approximately 15.1 ±0.2, 19.7 ±0.2, and 9.3 ±0.2 degrees 2θ; and at least three additional peaks selected from the group consisting of approximately 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2, and 15.9 ±0.2 degrees 2θ. Embodiment II-37. The solid form of any one of Embodiments II-34 to II-36, wherein the solid form is characterized by an XRPD diffraction pattern comprising XRPD peaks at approximately 15.1 ±0.2, 19.7 ±0.2, 9.3 ±0.2, 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2, and 15.9 ±0.2 degrees 2θ. Embodiment II-38. The solid form of any one of Embodiments II-34 to II-37, wherein the solid form is characterized by a TGA thermogram showing about 3.1% weight loss up to 180 °C. Embodiment II-39. The solid form of any one of Embodiments II-34 to II-38, wherein the solid form is Form O characterized by a DSC thermogram comprising at least one endothermic peak at about 70 °C or about 195 °C. Embodiment II-40. The solid form of any one of Embodiments II-34 to II-39, wherein the solid form is Form O characterized by a DSC thermogram comprising endothermic peaks at about 70 °C and about 195 °C. Embodiment II-41. The solid form of Embodiment II-34 to II-40, wherein the solid form is Form O characterized by two or more of: a. XRPD peaks at approximately 15.1 ±0.2, 19.7 ±0.2, 9.3 ±0.2, 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2, and 15.9 ±0.2 degrees 2θ; b. a TGA thermogram showing about 3.1% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 70 °C and about 195 °C. Embodiment II-42. The solid form of any one of Embodiments II-34 to II-41, wherein the XRPD spectrum is obtained using a Cu Kα source. Embodiment II-43. The solid form of Embodiment II-1, wherein the solid form is crystalline polymorphic Form N. Embodiment II-44. The solid form of Embodiment II-43, wherein the solid form is characterized by an XRPD diffraction pattern comprising at least two peaks selected from thegroup consisting of approximately 15.7 ± 0.2, 16.1 ± 0.2, 15.5 ± 0.2, 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2, and 6.6 ± 0.2 degrees 2θ. Embodiment II-45. The solid form of Embodiment II-43 or II-44, wherein the solid form is characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 15.7 ± 0.2, 16.1 ± 0.2, 15.5 ± 0.2, 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2, and 6.6 ± 0.2 degrees 2θ. Embodiment II-46. The solid form of any one of Embodiments II-43 to II-45, wherein the solid form is characterized by an XRPD pattern comprising: at least one peak selected from the group consisting of approximately 15.7 ± 0.2, 16.1 ± 0.2, and 15.5 ± 0.2 degrees 2θ; and at least one, at least two, at least three, or at least four peaks selected from the group consisting of approximately 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2, and 6.6 ± 0.2 degrees 2θ. Embodiment II-47. The solid form of any one of Embodiments II-43 to II-46, wherein the solid form is characterized by an XRPD pattern peaks at approximately 15.7 ± 0.2, 16.1 ± 0.2, 15.5 ± 0.2, 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2, and 6.6 ± 0.2 degrees 2θ. Embodiment II-48. The solid form of any one of Embodiments II-43 to II-47, wherein the solid form is characterized by a TGA thermogram showing about 3.9% weight loss up to 180 °C. Embodiment II-49. The solid form of any one of Embodiments II-43 to II-48, wherein the solid form is characterized by a DSC thermogram comprising at least one endothermic peak at about 60 °C, about 131 °C, or about 172 °C. Embodiment II-50. The solid form of any one of Embodiments II-43 to II-49, wherein the XRPD spectrum is obtained using a Cu Kα source. Embodiment II-51. A pharmaceutical composition comprising the solid form of any one of Embodiments II-1 to II-50, and at least one pharmaceutically acceptable excipient. Embodiment II-52. The pharmaceutical composition of embodiment II-51, wherein the solid form is the solid form of any one of Embodiments II-2 to II-20. Embodiment II-53. The pharmaceutical composition of embodiment II-51, wherein the solid form is the solid form of any one of Embodiments II-21 to II-33.Embodiment II-54. The pharmaceutical composition of embodiment II-51, wherein the solid form is the solid form of any one of Embodiments II-34 to II-42. Embodiment II-55. The pharmaceutical composition of embodiment II-51, wherein the solid form is the solid form of any one of Embodiments II-43 to II-50. Embodiment II-56. A method of treating cancer in a subject comprising administering to the subject a therapeutically effective amount of the solid form of any one of embodiments II- 1 to II-50, or the pharmaceutical composition of any one of Embodiments II-51 to II-55. Embodiment II-57. The method of Embodiment II-56, wherein the cancer is characterized by a KRas mutation. Embodiment II-58. The method of Embodiment II-57, wherein the KRas mutation corresponds to a KRasG12Dmutation. Embodiment II-59. The method of any one of Embodiment II-56 to II-59, wherein the cancer is tissue agnostic. Embodiment II-60. The method of any one of Embodiments II-56 to II-59, wherein the cancer is pancreatic cancer, lung cancer, or colorectal cancer. Embodiment II-61. A method for regulating activity of a KRas mutant protein comprising reacting the mutant protein with solid form of any one of Embodiments II-1 to II-50, or the pharmaceutical composition of any one of Embodiments II-51 to II-56. Embodiment II-62. A method for inhibiting proliferation of a cell population comprising contacting the cell population with solid form of any one of Embodiments II-1 to II- 50, or the pharmaceutical composition of any one of Embodiments II-51 to II-55. Embodiment II-63. The method of Embodiment II-62, wherein the inhibition of proliferation is measured as a decrease in cell viability of the cell population. Embodiment II-64. A method for inhibiting tumor metastasis in a subject comprising administering to the subject a therapeutically effective amount of the solid form of any one of Embodiments II-1 to II-50, or the pharmaceutical composition of any one of Embodiments II-51 to II-55. Embodiment II-65. A solid form of a compound of Formula (I) according to any one of Embodiments II-1 to II-50, or a pharmaceutical composition of any one of Embodiments II- 51 to II-55, for use in treating cancer. Embodiment II-66. Use of the solid form of a compound of Formula (I) according to any one of Embodiments II-1 to II-50, or the pharmaceutical composition of any one of Embodiments II-51 to II-55, for treating cancer.Embodiment II-67. Use of the solid form of a compound of Formula (I) according to any one of Embodiments II-1 to II-50, or the pharmaceutical composition of any one of Embodiments II-51 to II-55, in the manufacture of a medicament for treating cancer. Synthetic Processes Provided herein are improved processes for preparing a compound of Formulaintermediates useful in its synthesis (e.g., the Boc compounds of Formulaegeneral, the described processes provide efficient synthetic routes for preparing these compounds. The processes of the disclosure provide several advantages. For example, in some embodiments, the processes of the disclosure utilize solvents that are relatively non-toxic, are relatively inexpensive, and are relatively benign from the standpoints of industrial hygiene, process safety, and environmental burden. In some embodiments, sustainable alcoholic solvents such as methanol and ethanol are used. These aspects therefore provide improved safety and significant cost savings. In some embodiments, the processes of the disclosure provide for reduced usage of expensive reagents or materials, e.g., precious metal catalysts, by significant amounts in certain process steps, thereby providing a significant cost saving and reduction in waste. In some embodiments, the processes of the disclosure use relatively non-toxic reagents to reduce safety risks and costs. Further, in some embodiments, processes of the disclosure allow for significantly higher reactant concentrations in certain steps, thereby resulting in significant improvements in process equipment efficiency and process throughput, and associated cost savings.In some embodiments, the processes of the disclosure eliminate the need for multiple chromatographic purification steps as compared to known processes. Chromatographic purification steps require specialized and expensive process equipment, increase the number of required chemical operators, reduce throughput, and increase costs. The processes of the disclosure may also eliminate the need for certain extraction steps using organic solvent, and eliminate the need for multiple solvent stripping steps. Such improvements significantly reduce costs by reducing energy consumption, eliminating solvent handling and distillation steps, consequently obviating the associated needed process equipment and operation thereof, material handling needs, and industrial hygiene and environmental burden risks. The processes of the disclosure also provide for higher yield and purity as compared to prior art processes. The discovery of the disclosed processes, as described in detail herein, therefore represents a significant advance in the art. Formula (I) In one aspect, the disclosure provides a process for preparing a compound of Formula (I). In some embodiments, the process comprises the following steps: a) reacting a compound of Formula (A) with a compound of Formula (B), to prepare a compound of Formula (C):b) reacting the compound of Formula (C) with one or more reagents to prepare a compound of Formula (D):c) reacting the compound of Formula (D) with an oxidant to prepare a compound of Formula (E): Bocd) reacting the compound of Formula (E) with a compound of Formula (F) to prepare a compound of Formula (G):e) reacting the compound of Formula (G) with a compound of Formula (Ha) to prepare a compound of Formula (Ja): Bocwherein Boc is tert- butyloxycarbonyl; and f) reacting the compound of Formula (Ja) with an acidic reagent to prepare the compound of Formula (I). In some embodiments, the conditions of steps (a) – (f) are exemplified herein.In some embodiments, the process comprises the following steps: a) reacting a compound of Formula (A) with a compound of Formula (B) to prepare a compound of Formula (C):b) reacting the compound of Formula (C) with one or more reagents to prepare a compound of Formula (D):c) reacting the compound of Formula (D) with an oxidant to prepare a compound of Formula (E):d) reacting the compound of Formula (E) with a compound of Formula (F) to prepare a compound of Formula (G):e) reacting the compound of Formula (G) with a compound of Formula (H) to prepare a compound of Formula (J):f) reacting the compound of Formula (J) with an acidic reagent to prepare the compound of Formula (I). In some embodiments, the conditions of steps (a) – (f) are exemplified herein. Formula (I) – step a) In some embodiments, step a) comprises the use of a basic reagent. In some embodiments, the basic reagent comprises NaOt-Bu, NaH, or NaOt-Am. In some embodiments, the basic reagent comprises NaOt-Bu. In some embodiments, the basic reagent comprises NaH. In some embodiments, the basic reagent comprises NaOt-Am. In some embodiments, the basic reagent is NaOt-Bu, NaH, or NaOt-Am. In some embodiments, the basic reagent is NaOt-Bu. In some embodiments, the basic reagent is NaH. In some embodiments, the basic reagent is NaOt-Am. In some embodiments, step a) comprises the use of a solvent. In some embodiments, the solvent comprises NMP, THF, toluene, 2-MeTHF, MeCN, DCM, or a mixture thereof. In some embodiments, the solvent comprises a mixture of NMP and THF. In some embodiments, the solvent comprises NMP. In some embodiments, the solvent comprises THF. In some embodiments, the solvent comprises toluene. In some embodiments, the solvent comprises 2- MeTHF. In some embodiments, the solvent comprises MeCN. In some embodiments, the solvent comprises DCM. In some embodiments, the solvent is NMP, THF, toluene, 2-MeTHF, MeCN, DCM, or a mixture thereof. In some embodiments, the solvent is a mixture of NMP and THF. In some embodiments, the solvent is NMP. In some embodiments, the solvent is THF. In some embodiments, the solvent is toluene. In some embodiments, the solvent is 2-MeTHF. In some embodiments, the solvent is MeCN. In some embodiments, the solvent is DCM. In some embodiments, step a) comprises crystallizing the compound of Formula (C). In some embodiments, the compound of Formula (C) is crystallized in an acidic solution. In some embodiments, the acidic solution is AcOH in water. In some embodiments, the acidic solution is 2 wt% AcOH in water.In some embodiments, step a) comprises the use of a basic reagent and a solvent; and crystallizing the compound of Formula (C). In some embodiments, step a) comprises the use of NaOt-Bu and a mixture of NMP and THF; and the compound of Formula (C) is crystallized in an acidic solution. In some embodiments, step a) comprises the use of NaOt-Bu and a mixture of NMP and THF; and the compound of Formula (C) is crystallized in 2 wt% AcOH in water. In some embodiments, step a) comprises the following:. Formula (I) – step b) In some embodiments, in step b), the one or more reagents comprise a mixture of DIPEA with either POCl3 or BOPCl. In some embodiments, in step b), the one or more reagents comprise a mixture of POCl3 and DIPEA. In some embodiments, in step b), the one or more reagents are a mixture of BOPCl and DIPEA. Those of skill in the art would appreciate that the role of POCl3 or BOPCl in step b) is as a dehydrating agent that makes the 4-hydroxyl group of Formula (C) into a much better leaving group for the amine nucleophile, and that the role of DIPEA is as a general base to mop up the byproduct HCl. In some embodiments, step b) comprises the use of a solvent. In some embodiments, the solvent comprises MeCN, DCM, or a mixture thereof. In some embodiments, the solvent comprises MeCN. In some embodiments, the solvent comprises DCM. In some embodiments, the solvent is MeCN, DCM, or a mixture thereof. In some embodiments, the solvent is MeCN. In some embodiments, the solvent is DCM. In some embodiments, step b) comprises crystallizing the compound of Formula (D). In some embodiments, the compound of Formula (D) is crystallized in a mixture of MeCN and water. In some embodiments, in step b), the one or more reagents are POCl3 and DIPEA; and step b) comprises the use of a solvent and crystallizing the compound of Formula (D). In some embodiments, in step b), the one or more reagents are POCl3 and DIPEA; step b) comprises the use of MeCN; and the compound of Formula (D) is crystallized in a mixture of MeCN and water.In some embodiments, step b) comprises the following: Boc. Formula (I) – step c) In some embodiments, in step c), the oxidant comprises H2O2 / Na2WO4·H2O, m-CPBA, or oxone / RuCl3. In some embodiments, in step c), the oxidant comprises H2O2 / Na2WO4·H2O. In some embodiments, in step c), the oxidant comprises m-CPBA. In some embodiments, in step c), the oxidant comprises oxone / RuCl3. In some embodiments, in step c), the oxidant is H2O2 / Na2WO4·H2O, m-CPBA, or oxone / RuCl3. In some embodiments, in step c), the oxidant is H2O2 / Na2WO4·H2O. In some embodiments, in step c), the oxidant is m-CPBA. In some embodiments, in step c), the oxidant is oxone / RuCl3. In some embodiments, step c) comprises the use of an additive. In some embodiments, the additive comprises PhP(O)(OH)2, KOAc, AcOH, KH2PO4, H3PO4, or DIPEA. In some embodiments, the additive comprises PhP(O)(OH)2. In some embodiments, the additive comprises KOAc. In some embodiments, the additive comprises AcOH. In some embodiments, the additive KH2PO4. In some embodiments, the additive comprises H3PO4. In some embodiments, the additive comprises DIPEA. In some embodiments, the additive is PhP(O)(OH)2, KOAc, AcOH, KH2PO4, H3PO4, or DIPEA. In some embodiments, the additive is PhP(O)(OH)2. In some embodiments, the additive is KOAc. In some embodiments, the additive is AcOH. In some embodiments, the additive KH2PO4. In some embodiments, the additive is H3PO4. In some embodiments, the additive is DIPEA. In some embodiments, step c) comprises the use of a solvent that comprises a mixture of an organic solvent and water. In some embodiments, the solvent comprises a mixture of water and one or more of toluene, n-PrOH, THF, MeCN, DCM, EtOAc. In some embodiments, the solvent comprises toluene. In some embodiments, the solvent comprises a mixture of toluene and water. In some embodiments, the solvent comprises n-PrOH. In some embodiments, the solvent comprises THF. In some embodiments, the solvent comprises MeCN. In some embodiments, the solvent comprises DCM. In some embodiments, the solvent comprises EtOAc. In some embodiments, the solvent is toluene, n-PrOH, THF, MeCN, DCM, EtOAc, or a mixture thereof. In some embodiments, the solvent is toluene. In someembodiments, the solvent is a mixture of toluene and water. In some embodiments, the solvent is n-PrOH. In some embodiments, the solvent is THF. In some embodiments, the solvent is MeCN. In some embodiments, the solvent is DCM. In some embodiments, the solvent is EtOAc. In some embodiments, step c) is performed at about 15 to about 60 °C. In some embodiments, step c) is performed at about 15 to about 50 °C. In some embodiments, step c) is performed at about 15 to about 45 °C. In some embodiments, step c) is performed at about 45 °C. In some embodiments, step c) is performed at about 50 °C. In some embodiments, step c) is performed at about 60 °C. In some embodiments, step c) comprises telescoping the compound of Formula (E) into step d). In some embodiments, step c) comprises telescoping the compound of Formula (E) into step d) as a solution in toluene. In some embodiments, in step c), the oxidant is H2O2 / Na2WO4·H2O; step c) comprises the use of a solvent and an additive; step c) is performed at about 15 to about 45 °C; and step c) comprises telescoping the compound of Formula (E) into step d). In some embodiments, in step c), the oxidant is H2O2 / Na2WO4·H2O; step c) comprises the use of PhP(O)(OH)2 and a mixture of toluene and water; step c) is performed at about 15 to about 45 °C; and step c) comprises telescoping the compound of Formula (E) into step d) as a solution of toluene. In some embodiments, step c) comprises the following:. Formula (I) – step d) In some embodiments, step d) comprises the use of a basic reagent. In some embodiments, the basic reagent comprises NaOt-Am, NaOt-Bu, or NaH. In some embodiments, the basic reagent comprises NaOt-Am. In some embodiments, the basic reagent comprises NaOt-Bu. In some embodiments, the basic reagent comprises NaH. In some embodiments, the basic reagent is NaOt-Am, NaOt-Bu, or NaH. In some embodiments, the basic reagent is NaOt- Am. In some embodiments, the basic reagent is NaOt-Bu. In some embodiments, the basic reagent is NaH. It would be understood that salts of other alkali metals such as potassium would have an equivalent effect.In some embodiments, step d) comprises the use of a solvent. In some embodiments, the solvent comprises toluene, THF, 2-MeTHF, or a mixture thereof. In some embodiments, the solvent comprises toluene. In some embodiments, the solvent comprises THF. In some embodiments, the solvent comprises a mixture of toluene and THF. In some embodiments, the solvent comprises 2-MeTHF. In some embodiments, the solvent comprises a mixture of toluene and 2-MeTHF. In some embodiments, the solvent is toluene, THF, 2-MeTHF, or a combination thereof. In some embodiments, the solvent is toluene. In some embodiments, the solvent is THF. In some embodiments, the solvent is a mixture of toluene and THF. In some embodiments, the solvent is 2-MeTHF. In some embodiments, the solvent is a mixture of toluene and 2-MeTHF. In some embodiments, step d) is performed at about -10 to about 25 °C. In some embodiments, step d) is performed at about 0 to about 25 °C. In some embodiments, step d) is performed at about -10 to about 5 °C. In some embodiments, step d) comprises crystallizing the compound of Formula (G). In some embodiments, the compound of Formula (G) is crystallized in a mixture of water and iPrOH. In some embodiments, step d) comprises the use of a basic reagent and a solvent; step d) is performed at about -10 to about 25 °C; and step d) comprises crystallizing the compound of Formula (G). In some embodiments, step d) comprises the use of NaOt-Am and a mixture of toluene and 2-MeTHF; step d) is performed at about -10 °C to about 5 °C; and the compound of Formula (G) is crystallized in a mixture of water and iPrOH. In some embodiments, step d) comprises the following:. In some embodiments, steps c) and d) occur in the same reaction vessel. Formula (I) – step e) In some embodiments, step e) comprises the use of a catalyst. In some embodiments, the catalyst comprises Pd(Ad2P(n-Bu))(crotyl)Cl, Pd(Ad2P(n-Bu))G3, Amphos Pd G3, PCy3 Pd G3, Pt-Bu3 Pd G3, SPhos Pd G3, RuPhos Pd G3, XPhos Pd G3, CPhos Pd G3, DavePhos Pd G3, PdCl(crotyl)Amphos, PdCl(crotyl)PCy3, or PEPPSITM-iPr. In some embodiments, the catalyst comprises Pd(Ad2P(n-Bu))(crotyl)Cl. In some embodiments, the catalyst comprises Pd(Ad2P(n-Bu))G3 (the catalyst Pd(Ad2P(n-Bu))G3 is sometimes referred to as cataCXium A Pd G3). In some embodiments, the catalyst comprises Amphos Pd G3. In some embodiments, the catalyst comprises PCy3 Pd G3. In some embodiments, the catalyst comprises Pt-Bu3 Pd G3. In some embodiments, the catalyst comprises SPhos Pd G3. In some embodiments, the catalyst comprises RuPhos Pd G3. In some embodiments, the catalyst comprises XPhos Pd G3. In some embodiments, the catalyst comprises CPhos Pd G3. In some embodiments, the catalyst comprises DavePhos Pd G3. In some embodiments, the catalyst comprises PdCl(crotyl)Amphos. In some embodiments, the catalyst comprises PdCl(crotyl)PCy3. In some embodiments, the catalyst comprises PEPPSITM-iPr. In some embodiments, the catalyst is Pd(Ad2P(n-Bu))(crotyl)Cl, Pd(Ad2P(n-Bu))G3, Amphos Pd G3, PCy3 Pd G3, Pt-Bu3 Pd G3, SPhos Pd G3, RuPhos Pd G3, XPhos Pd G3, CPhos Pd G3, DavePhos Pd G3, PdCl(crotyl)Amphos, PdCl(crotyl)PCy3, or PEPPSITM-iPr. In some embodiments, the catalyst is Pd(Ad2P(n-Bu))(crotyl)Cl. In some embodiments, the catalyst is Pd(Ad2P(n-Bu))G3. In some embodiments, the catalyst is Amphos Pd G3. In some embodiments, the catalyst is PCy3 Pd G3. In some embodiments, the catalyst is Pt-Bu3 Pd G3. In some embodiments, the catalyst is SPhos Pd G3. In some embodiments, the catalyst is RuPhos Pd G3. In some embodiments, the catalyst is XPhos Pd G3. In some embodiments, the catalyst is CPhos Pd G3. In some embodiments, the catalyst is DavePhos Pd G3. In some embodiments, the catalyst is PdCl(crotyl)Amphos. In some embodiments, the catalyst is PdCl(crotyl)PCy3. In some embodiments, the catalyst is PEPPSITM-iPr. In some embodiments, the amount of the catalysis used is 0.01-0.23 equiv. In some embodiments, the amount of the catalyst used in 0.01 equiv. In some embodiments, the catalyst is Pd(Ad2P(n-Bu))(crotyl)Cl used in 0.01 equiv. In some embodiments, step e) comprises the use of a basic reagent. In some embodiments, the basic reagent comprises K3PO4·H2O, Cs2CO3, CsF, or KHCO3. In some embodiments, the basic reagent comprises K3PO4·H2O. In some embodiments, the basic reagent comprises Cs2CO3. In some embodiments, the basic reagent comprises CsF. In some embodiments, the basic reagent comprises KHCO3. In some embodiments, the basic reagent is K3PO4·H2O, Cs2CO3, CsF, or KHCO3. In some embodiments, the basic reagent is K3PO4·H2O. In some embodiments, the basic reagent is Cs2CO3. In some embodiments, the basic reagent is CsF. In some embodiments, the basic reagent is KHCO3. In some embodiments, step e) comprises the use of a solvent. In some embodiments, the solvent comprises THF, t-AmOH, water, or a mixture thereof. In some embodiments, the solvent comprises a mixture of THF and water. In some embodiments, the solvent comprises THF. In some embodiments, the solvent comprises t-AmOH. In some embodiments, thesolvent comprises water. In some embodiments, the solvent is THF, t-AmOH, water, or a mixture thereof. In some embodiments, the solvent is a mixture of THF and water. In some embodiments, the solvent is THF. In some embodiments, the solvent is t-AmOH. In some embodiments, the solvent is water. In some embodiments, a palladium scavenger is deployed, preferably SiliaMetSTMThiol, in a solvent such as acetone. In some embodiments, step e) comprises crystallizing the compound of Formula (J). In some embodiments, the compound of Formula (J) is crystallized in a mixture of water and acetone. In some embodiments, step e) comprises the use of a catalyst, a basic reagent, a solvent, and crystallizing the compound of Formula (J). In some embodiments, step e) comprises the use of Pd(Ad2P(n-Bu))(crotyl)Cl, K3PO4·H2O, a mixture of THF and water, and the compound of Formula (J) is crystallized in a mixture of water and acetone. In some embodiments, step e) comprises the use of Pd(Ad2P(n-Bu))(crotyl)Cl, K3PO4·H2O in 0.01 equiv., a mixture of THF and water, and the compound of Formula (J) is crystallized in a mixture of water and acetone. In some embodiments, step e) comprises the following:iii. acetone, water . In some embodiments, step e) comprises the use of a catalyst. In some embodiments, the catalyst comprises Pd(SPhos)(crotyl)Cl, Pd(Ad2P(n-Bu))(crotyl)Cl, Pd(Ad2P(n-Bu))G3, Amphos Pd G3, PCy3 Pd G3, Pt-Bu3 Pd G3, SPhos Pd G3, RuPhos Pd G3, XPhos Pd G3, CPhos Pd G3, DavePhos Pd G3, PdCl(crotyl)Amphos, PdCl(crotyl)PCy3, or PEPPSITM-iPr. In some embodiments, the catalyst comprises Pd(SPhos)(crotyl)Cl. In some embodiments, the catalyst comprises Pd(Ad2P(n-Bu))(crotyl)Cl. In some embodiments, the catalyst comprises Pd(Ad2P(n- Bu))G3 (the catalyst Pd(Ad2P(n-Bu))G3 is sometimes referred to as cataCXium A Pd G3). In some embodiments, the catalyst comprises Amphos Pd G3. In some embodiments, the catalyst comprises PCy3 Pd G3. In some embodiments, the catalyst comprises Pt-Bu3 Pd G3. In some embodiments, the catalyst comprises SPhos Pd G3. In some embodiments, the catalyst comprises RuPhos Pd G3. In some embodiments, the catalyst comprises XPhos Pd G3. In someembodiments, the catalyst comprises CPhos Pd G3. In some embodiments, the catalyst comprises DavePhos Pd G3. In some embodiments, the catalyst comprises PdCl(crotyl)Amphos. In some embodiments, the catalyst comprises PdCl(crotyl)PCy3. In some embodiments, the catalyst comprises PEPPSITM-iPr. In some embodiments, the catalyst is Pd(SPhos)(crotyl)Cl, Pd(Ad2P(n-Bu))(crotyl)Cl, Pd(Ad2P(n-Bu))G3, Amphos Pd G3, PCy3 Pd G3, Pt-Bu3 Pd G3, SPhos Pd G3, RuPhos Pd G3, XPhos Pd G3, CPhos Pd G3, DavePhos Pd G3, PdCl(crotyl)Amphos, PdCl(crotyl)PCy3, or PEPPSITM-iPr. In some embodiments, the catalyst is Pd(SPhos)(crotyl)Cl. In some embodiments, the catalyst is Pd(Ad2P(n-Bu))(crotyl)Cl. In some embodiments, the catalyst is Pd(Ad2P(n-Bu))G3. In some embodiments, the catalyst is Amphos Pd G3. In some embodiments, the catalyst is PCy3 Pd G3. In some embodiments, the catalyst is Pt-Bu3 Pd G3. In some embodiments, the catalyst is SPhos Pd G3. In some embodiments, the catalyst is RuPhos Pd G3. In some embodiments, the catalyst is XPhos Pd G3. In some embodiments, the catalyst is CPhos Pd G3. In some embodiments, the catalyst is DavePhos Pd G3. In some embodiments, the catalyst is PdCl(crotyl)Amphos. In some embodiments, the catalyst is PdCl(crotyl)PCy3. In some embodiments, the catalyst is PEPPSITM-iPr. In some embodiments, the amount of the catalysis used is 0.001-0.200 equiv. In some embodiments, the amount of the catalyst used is 0.006 equiv. In some embodiments, the catalyst is Pd(SPhos)(crotyl)Cl used is 0.006 equiv. In some embodiments, the amount of the catalysis used is about 0.001-0.200 equiv. In some embodiments, the amount of the catalyst used is about 0.006 equiv. In some embodiments, the catalyst, Pd(SPhos)(crotyl)Cl, used is about 0.006 equiv. In some embodiments, step e) comprises the use of SPhos. In some embodiments, the SPhos is used in 0.001 to 0.010 equiv. In some embodiments, the SPhos is used in 0.002 to 0.005 equiv. In some embodiments, the SPhos is used in 0.003 equiv. In some embodiments, the SPhos is used in about 0.001 to about 0.010 equiv. In some embodiments, the SPhos is used in about 0.002 to 0.005 equiv. In some embodiments, the SPhos is used in about 0.003 equiv. In some embodiments, step e) comprises the use of a basic reagent. In some embodiments, the basic reagent comprises K3PO4·H2O, Cs2CO3, CsF, or KHCO3. In some embodiments, the basic reagent comprises K3PO4·H2O. In some embodiments, the basic reagent comprises Cs2CO3. In some embodiments, the basic reagent comprises CsF. In some embodiments, the basic reagent comprises KHCO3. In some embodiments, the basic reagent is K3PO4·H2O, Cs2CO3, CsF, or KHCO3. In some embodiments, the basic reagent is K3PO4·H2O. In some embodiments, the basic reagent is Cs2CO3. In some embodiments, the basic reagent is CsF. In some embodiments, the basic reagent is KHCO3.In some embodiments, step e) comprises the use of a solvent. In some embodiments, the solvent comprises THF, t-AmOH, water, or a mixture thereof. In some embodiments, the solvent comprises a mixture of THF and water. In some embodiments, the solvent comprises THF. In some embodiments, the solvent comprises t-AmOH. In some embodiments, the solvent comprises water. In some embodiments, the solvent is THF, t-AmOH, water, or a mixture thereof. In some embodiments, the solvent is a mixture of THF and water. In some embodiments, the solvent is THF. In some embodiments, the solvent is t-AmOH. In some embodiments, the solvent is water. In some embodiments, step e) comprises crystallizing the compound of Formula (Ja). In some embodiments, the compound of Formula (Ja) is crystallized in n-heptane. In some embodiments, step e) comprises the use of a catalyst, a basic reagent, a solvent, and crystallizing the compound of Formula (Ja). In some embodiments, step e) comprises the use of Pd(SPhos)(crotyl)Cl, SPhos, K3PO4·H2O, a mixture of THF and water, and the compound of Formula (Ja) is crystallized in a mixture of water and acetone. In some embodiments, step e) comprises the use of Pd(SPhos)(crotyl)Cl in 0.006 equiv., SPhos in 0.003 equiv., K3PO4·H2O, a mixture of THF and water, and the compound of Formula (Ja) is crystallized in n-heptane. In some embodiments, step e) comprises the use of Pd(SPhos)(crotyl)Cl in about 0.006 equiv., SPhos in about 0.003 equiv., K3PO4·H2O, a mixture of THF and water, and the compound of Formula (Ja) is crystallized in n-heptane. In some embodiments, step e) comprises the following:Formula (I) – step f) In some embodiments, in step f), the acidic reagent is MsOH or TFA. In some embodiments, in step f), the acidic reagent comprises MsOH. In some embodiments, in step f), the acidic reagent comprises TFA. In some embodiments, in step f), the acidic reagent is MsOH. In some embodiments, in step f), the acidic reagent is TFA. In some embodiments, step f) comprises the use of a solvent. In some embodiments, the solvent comprises toluene, EtOAc, AcOH, or a mixture thereof. In some embodiments, the solvent comprises toluene. In some embodiments, the solvent comprises EtOAc. In someembodiments, the solvent comprises AcOH. In some embodiments, the solvent is toluene, EtOAc, AcOH, or a mixture thereof. In some embodiments, the solvent is toluene. In some embodiments, the solvent is EtOAc. In some embodiments, the solvent is AcOH. In some embodiments, step f) is performed at about 25 °C or about 50 °C. In some embodiments, step f) is performed at about 25 °C. In some embodiments, step f) comprises crystallizing the compound of Formula (I). In some embodiments, the compound of Formula (I) is crystallized in a mixture of EtOH and heptane. In some embodiments, crystallization is induced using seed crystals of Form AG of the compound of Formula (I), which seed was formed under the same heptane / EtOH crystallization condition. In some embodiments, in step f), the acidic reagent is MsOH; step f) comprises the use of a solvent; step f) is performed at about 25 °C or about 50 °C; and step f) comprises crystallizing the compound of Formula (I). In some embodiments, in step f), the acidic reagent is MsOH; step f) comprises the use of toluene; step f) is performed at about 25 °C; and the compound of Formula (I) is crystallized in a mixture of EtOH and heptane. In some embodiments, in step f), the acidic reagent is MsOH; step f) comprises the use of toluene; step f) is performed at about 25 °C; and the compound of Formula (I) is crystallized in a mixture of EtOH and heptane using seed crystals of Form AG. In some embodiments, step f) comprises the following:. In some embodiments, in step f), the acidic reagent is MsOH or TFA. In some embodiments, in step f), the acidic reagent comprises MsOH. In some embodiments, in step f), the acidic reagent comprises TFA. In some embodiments, in step f), the acidic reagent is MsOH. In some embodiments, in step f), the acidic reagent is TFA. In some embodiments, step f) comprises the use of a solvent. In some embodiments, the solvent comprises toluene, EtOAc, AcOH, or a mixture thereof. In some embodiments, the solvent comprises toluene. In some embodiments, the solvent comprises EtOAc. In some embodiments, the solvent comprises AcOH. In some embodiments, the solvent is toluene,EtOAc, AcOH, or a mixture thereof. In some embodiments, the solvent is toluene. In some embodiments, the solvent is EtOAc. In some embodiments, the solvent is AcOH. In some embodiments, step f) is performed at about 10 °C, about 15 °C, about 25 °C or about 50 °C. In some embodiments, step f) is performed at about 10 °C. In some embodiments, step f) is performed at about 15 °C. In some embodiments, step f) is performed at about 25 °C. In some embodiments, step f) is performed below 25 °C (i.e., < 25°C, but ≥ 5°C). In some embodiments, step f) is performed below 50 °C. In some embodiments, step f) comprises crystallizing the compound of Formula (I). In some embodiments, the compound of Formula (I) is crystallized in a mixture of EtOH and heptane. In some embodiments, crystallization is induced using seed crystals of Form AG of the compound of Formula (I), which seed was formed under the same heptane / EtOH crystallization condition. In some embodiments, in step f), the acidic reagent is MsOH; step f) comprises the use of a solvent; step f) is performed at about 25 °C or about 50 °C; and step f) comprises crystallizing the compound of Formula (I). In some embodiments, in step f), the acidic reagent is MsOH; step f) comprises the use of toluene; step f) is performed at about 25 °C; and the compound of Formula (I) is crystallized in a mixture of EtOH and heptane. In some embodiments, in step f), the acidic reagent is MsOH; step f) comprises the use of toluene; step f) is performed at about 25 °C; and the compound of Formula (I) is crystallized in a mixture of EtOH and heptane using seed crystals of Form AG. In some embodiments, in step f), the acidic reagent is MsOH; step f) comprises the use of toluene; step f) is performed below 25 °C; and the compound of Formula (I) is crystallized in a mixture of EtOH and heptane. In some embodiments, in step f), the acidic reagent is MsOH; step f) comprises the use of toluene; step f) is performed below 25 °C; and the compound of Formula (I) is crystallized in a mixture of EtOH and heptane using seed crystals of Form AG. In some embodiments, step f) comprises the following:In some embodiments, the compound of Formula (A) is made by a process described herein. In some embodiments, the compound of Formula (B) is made by a process described herein. Insome embodiments, the compound of Formula (F) is made per the procedure for Intermediate 1A in WO2022 / 216762. In some embodiments, the compound of Formula (F) is made by the procedure for Intermediate 5, in PCT / US2023 / 022914. In some embodiments, the compound of Formula (H) is made by a process described herein. In some embodiments, the compound of Formula (Ha) is made by a process described herein. In some embodiments, in the process of preparing a compound of Formula (I), the compound of Formula (A) is made by a process described herein; the compound of Formula (B) is made by a process described herein; the compound of Formula (F) is made by a process described herein; and the compound of Formula (H) is made by a process described herein. In some embodiments, in the process of preparing a compound of Formula (I), the compound of Formula (A) is made by a process described herein; the compound of Formula (B) is made by a process described herein; the compound of Formula (F) is made by a process described herein; and the compound of Formula (Ha) is made by a process described herein. In some embodiments, the process of preparing the compound of Formula (I) comprises the following: .In some embodiments, the process of preparing the compound of Formula (I) comprises the following:. In some embodiments, the process of preparing the compound of Formula (I) comprises the following:5 Formula (A)In one aspect, the disclosure provides a process for preparing a compound of Formula (A). In some embodiments, the process comprises the following steps: a) reacting a compound of Formula (Aw) with a basic reagent and a brominating reagent to prepare a compound of Formula (Ax):b) reacting the compound of Formula (Ax) with an activating reagent and a coupling reagent to prepare a compound of Formula (Ay):c) reacting the compound of Formula (Ay) with S-methylisothiourea to prepare a compound of Formula (Az):d) reacting the compound of Formula (Az) with a basic reagent to prepare the compound of Formula (A). In some embodiments, the process comprises the following steps: a) reacting a compound of Formula (Aw) with TMPMgCl·LiCl, and BrCF2CF2Br to prepare a compound of Formula (Ax):b) reacting the compound of Formula (Ax) with NHS and EDC to prepare a compound of Formula (Ay):c) reacting the compound of Formula (Ay) with S-methylisothiourea to prepare a compound of Formula (Az):d) reacting the compound of Formula (Az) with NMI and DMA to prepare a compound of Formula (A). In some embodiments, steps b) and c) occur in the same reaction vessel. In some embodiments, the conditions of steps (a) – (d) are exemplified herein. Formula (A) – step a) In some embodiments, in step a), the basic reagent comprises TMPMgCl·LiCl, LDA, LiHMDS, LiTMP, or (i-Pr)2NMgCl·LiCl. In some embodiments, in step a), the basic reagent comprises TMPMgCl·LiCl. In some embodiments, in step a), the basic reagent comprises LDA. In some embodiments, in step a), the basic reagent comprises LiHMDS. In some embodiments, in step a), the basic reagent comprises LiTMP. In some embodiments, in step a), the basic reagent comprises (i-Pr)2NMgCl·LiCl. In some embodiments, in step a), the basic reagent is TMPMgCl·LiCl, LDA, LiHMDS, LiTMP, or (i-Pr)2NMgCl·LiCl. In some embodiments, in step a), the basic reagent is TMPMgCl·LiCl. In some embodiments, in step a), the basic reagent is LDA. In some embodiments, in step a), the basic reagent is LiHMDS. In some embodiments, in step a), the basic reagent is LiTMP. In some embodiments, in step a), the basic reagent is (i- Pr)2NMgCl·LiCl. In some embodiments, in step a), the brominating reagent comprises BrCF2CF2Br, BrCCl2CCl2Br, NBS, or Br2. In some embodiments, in step a), the brominating reagent comprises BrCF2CF2Br. In some embodiments, in step a), the brominating reagent comprises BrCCl2CCl2Br. In some embodiments, in step a), the brominating reagent comprises NBS. In some embodiments, in step a), the brominating reagent comprises Br2. In some embodiments, in step a), the brominating reagent is BrCF2CF2Br, BrCCl2CCl2Br, NBS, or Br2. In some embodiments, in step a), the brominating reagent is BrCF2CF2Br. In some embodiments, in stepa), the brominating reagent is BrCCl2CCl2Br. In some embodiments, in step a), the brominating reagent is NBS. In some embodiments, in step a), the brominating reagent is Br2. In some embodiments, step a) comprises the use of a solvent. In some embodiments, the solvent comprises THF, MTBE, or a mixture thereof. In some embodiments, the solvent comprises THF. In some embodiments, the solvent comprises MTBE. In some embodiments, the solvent is THF, MTBE, or a mixture thereof. In some embodiments, the solvent is THF. In some embodiments, the solvent is MTBE. In some embodiments, step a) comprises the following, and can include a crystallization of the compound according to methods known to those skilled in the art:. Formula (A) – step b) In some embodiments, in step b), the activating reagent comprises NHS or HOBt. In some embodiments, in step b), the activating reagent comprises NHS. In some embodiments, in step b), the activating reagent comprises HOBt. In some embodiments, in step b), the activating reagent is NHS or HOBt. In some embodiments, in step b), the activating reagent is NHS. In some embodiments, in step b), the activating reagent is HOBt. In some embodiments, in step b), the coupling reagent comprises EDC, DCC, DIC, CDI, or BTC. In some embodiments, the coupling reagent comprises EDC. In some embodiments, in step b), the coupling reagent comprises DCC. In some embodiments, in step b), the coupling reagent comprises CDI. In some embodiments, in step b), the coupling reagent comprises BTC. In some embodiments, in step b), the coupling reagent is EDC, DCC, CDI, or BTC. In some embodiments, the coupling reagent is EDC. In some embodiments, in step b), the coupling reagent is DCC. In some embodiments, in step b), the coupling reagent is CDI. In some embodiments, in step b), the coupling reagent is BTC. In some embodiments, step b) comprises the use of a solvent. In some embodiments, the solvent comprises DCM, THF, 1,4-dioxane, MeCN, DMF, DMAc, or a mixture thereof. In some embodiments, the solvent comprises DCM. In some embodiments, the solvent comprises THF. In some embodiments, the solvent comprises 1,4-dioxane. In some embodiments, the solvent comprises MeCN. In some embodiments, the solvent comprises DMF. In some embodiments, the solvent comprises DMAc. In some embodiments, the solvent is DCM, THF,1,4-dioxane, MeCN, DMF, DMAc, or a mixture thereof. In some embodiments, the solvent is DCM. In some embodiments, the solvent is THF. In some embodiments, the solvent is 1,4- dioxane. In some embodiments, the solvent is MeCN. In some embodiments, the solvent is DMF. In some embodiments, the solvent is DMAc. In some embodiments, step b) comprises the following:. Formula (A) – step c) In some embodiments, step c) can comprise filtration of the compound according to methods known to those skilled in the art. In some embodiments, the filtration comprises the use of Ecosorb ® C941 (Graver Technologies). In some embodiments, step c) comprises the use of: i. S-methylisothirourea hemisulfate salt, NaHCO3, and water; ii. Ecosorb ® C941; and iii. MeCN in water. In some embodiments, step c) comprises the following: i. S-methylisothiourea hemisulfate salt, NaHCO3, H2O ii. Ecosorb ® C941 iii. MeCN, H2O. Formula (A) – step d) In some embodiments, in step d), the basic reagent comprises NMI, NaHCO3, Na2CO3, Li2CO3, DIPEA, TEA, or DBU. In some embodiments, the basic reagent comprises NMI. In some embodiments, in step d), the basic reagent comprises NMI. In some embodiments, in step d), the basic reagent comprises NaHCO3. In some embodiments, in step d), the basic reagent comprises Na2CO3. In some embodiments, in step d), the basic reagent comprises Li2CO3. In some embodiments, in step d), the basic reagent comprises DIPEA. In some embodiments, in step d), the basic reagent comprises TEA. In some embodiments, in step d), the basic reagent comprises DBU. In some embodiments, in step d), the basic reagent is NMI, NaHCO3, Na2CO3, Li2CO3, DIPEA, TEA, or DBU. In some embodiments, the basic reagent is NMI. In some embodiments, in step d), the basic reagent is NMI. In some embodiments, in step d), the basicreagent is NaHCO3. In some embodiments, in step d), the basic reagent is Na2CO3. In some embodiments, in step d), the basic reagent is Li2CO3. In some embodiments, in step d), the basic reagent is DIPEA. In some embodiments, in step d), the basic reagent is TEA. In some embodiments, in step d), the basic reagent is DBU. In some embodiments, step d) comprises the use of a solvent. In some embodiments, the solvent is DMA, DMF, or a mixture thereof. In some embodiments, the solvent comprises DMA. In some embodiments, the solvent comprises DMF. In some embodiments, the solvent is DMA, DMF, or a mixture thereof. In some embodiments, the solvent is DMA. In some embodiments, the solvent is DMF. In some embodiments, step d) can include a crystallization of the compound according to methods known to those skilled in the art. In some embodiments, step d) comprises the following:. In some embodiments, the process preparing the compound of Formula (A) comprises the following:i. S-methylisothiourea hemisulfate salt,. In some embodiments, the process of preparing the compound of Formula (A) comprises the following:i. S-methylisothiourea hemisulfate salt,

[0662] Formula (B)

[0663] In one aspect, the disclosure provides a process for preparing a compound of Formula(B). In some embodiments, the process comprises the following steps: a) reacting a compound of Formula (Bv) with benzyl bromide and a basic reagent to prepare a compound of Formula (Bw):(Bw); b) reacting the compound of Formula (Bw) with s-BuLi, a ligand, and acetaldehyde to prepare a mixture of a compound of Formula (Bx’) and a compound of Formula (Bx”):c) reacting the mixture of a compound of Formula (Bx’) and a compound of Formula (Bx”) with H2, a catalyst, and a chiral acid to prepare a compound of Formula (By):d) reacting the compound of Formula (By) with (BochO and a basic reagent to prepare a compound of Formula (Bz):Boce) reacting the compound of Formula (Bz) with a basic reagent to prepare the compound of Formula (B).

[0664] In some embodiments, the process comprises the following steps: a) reacting a compound of Formula (Bv) with benzyl bromide and a basic reagent to prepare a compound of Formula (Bw):(Bw); b) reacting the compound of Formula (Bw) with s -BiiLi, TMEDA, and acetaldehyde to prepare a mixture of a compound of Formula (Bx’) and a compound of Formula (Bx”):c) reacting the mixture of a compound of Formula (Bx’) and a compound of Formula (Bx”) with H2, Pd / C, and D-(+)-10-camphorsulfonic acid to prepare a compound of Formula(By):d) reacting the compound of Formula (By) with (Boc)2O and a basic reagent to prepare a compound of Formula (Bz):e) reacting the compound of Formula (Bz) with a basic reagent to prepare the compound of Formula (B). In some embodiments, steps a) and b) occur in the same reaction vessel. In some embodiments, the conditions of steps (a) – (e) are exemplified herein. Formula (B) – step a) In some embodiments, step a) comprises the use of a solvent. In some embodiments, the solvent comprises EtOH, DMF, THF, 2-MeTHF, acetone, toluene, or a mixture thereof. In some embodiments, the solvent comprises EtOH. In some embodiments, the solvent comprises DMF. In some embodiments, the solvent comprises THF. In some embodiments, the solvent comprises 2-MeTHF. In some embodiments, the solvent comprises acetone. In some embodiments, the solvent comprises toluene. In some embodiments, the solvent is EtOH, DMF, THF, 2-MeTHF, acetone, toluene, or a mixture thereof. In some embodiments, the solvent is EtOH. In some embodiments, the solvent is DMF. In some embodiments, the solvent is THF. In some embodiments, the solvent is 2-MeTHF. In some embodiments, the solvent is acetone. In some embodiments, the solvent is toluene. In some embodiments, in step a), the basic reagent comprises K2CO3, Na2CO3, NaHCO3, or KHCO3. In some embodiments, in step a), the basic reagent comprises K2CO3. In some embodiments, in step a), the basic reagent comprises Na2CO3. In some embodiments, in step a), the basic reagent comprises NaHCO3. In some embodiments, in step a), the basic reagent comprises KHCO3. In some embodiments, in step a), the basic reagent is K2CO3, Na2CO3, NaHCO3, or KHCO3. In some embodiments, in step a), the basic reagent is K2CO3. Insome embodiments, in step a), the basic reagent is Na2CO3. In some embodiments, in step a), the basic reagent is NaHCO3. In some embodiments, in step a), the basic reagent is KHCO3. In some embodiments, step a) comprises telescoping the compound of Formula (Bw) into step b). In some embodiments, step a) comprises telescoping the compound of Formula (Bw) into step b) as a solution in toluene. In some embodiments, step a) comprises the use of a solvent and telescoping the compound of Formula (Bw) into step b). In some embodiments, step a) comprises the use of EtOAc and telescoping the compound of Formula (Bw) into step b) as a solution in toluene. In some embodiments, step a) comprises the following:Boc Boc . Formula (B) – step b) In some embodiments, in step b), the ligand comprises TMEDA or 3,7-dipropyl-3,7- diazabicyclo[3.3.1]nonane. In some embodiments, in step b), the ligand comprises TMEDA. In some embodiments, in step b), the ligand comprises 3,7-dipropyl-3,7-diazabicyclo[3.3.1]nonane. In some embodiments, in step b), the ligand is TMEDA or 3,7-dipropyl-3,7- diazabicyclo[3.3.1]nonane. In some embodiments, in step b), the ligand is TMEDA. In some embodiments, in step b), the ligand is 3,7-dipropyl-3,7-diazabicyclo[3.3.1]nonane. In some embodiments, step b) comprises the use of a solvent. In some embodiments, the solvent comprises MTBE, toluene, MeOH, Et2O, i-Pr2O, THF, 2-MeTHF, CPME, or a mixture thereof. In some embodiments, the solvent comprises a mixture of MTBE and toluene. In some embodiments, the solvent comprises MTBE. In some embodiments, the solvent comprises toluene. In some embodiments, the solvent comprises MeOH. In some embodiments, the solvent comprises Et2O. In some embodiments, the solvent comprises i-Pr2O. In some embodiments, the solvent comprises THF. In some embodiments, the solvent comprises 2-MeTHF. In some embodiments, the solvent comprises CPME. In some embodiments, the solvent is MTBE, toluene, MeOH, Et2O, i-Pr2O, THF, 2-MeTHF, CPME, or a mixture thereof. In some embodiments, the solvent is a mixture of MTBE and toluene. In some embodiments, the solvent is MTBE. In some embodiments, the solvent is toluene. In some embodiments, the solvent is MeOH. In some embodiments, the solvent is Et2O. In some embodiments, the solvent is i-Pr2O. In some embodiments, the solvent is THF. In some embodiments, the solvent is 2-MeTHF. In some embodiments, the solvent is CPME.In some embodiments, step b) comprises treating the mixture of a compound of Formula (Bx’) and a compound of Formula (Bx’’) with MeOH and MsOH. In some embodiments, in step b), the ligand is TMEDA; step b) comprises the use of a mixture of MTBE and toluene; and step b) comprises treating the mixture of a compound of Formula (Bx’) and a compound of Formula (Bx’’) with MeOH and MsOH. In some embodiments, step b) comprises the following: i B Li TMEDA MTBE.

[0001] Formula (B) – step c) In some embodiments, in step c), the catalyst comprises Pd / C or Pd(OH)2. In some embodiments, the catalyst comprises Pd / C. In some embodiments, the catalyst comprises Pd(OH)2. In some embodiments, in step c), the catalyst is Pd / C or Pd(OH)2. In some embodiments, the catalyst is Pd / C. In some embodiments, the catalyst is Pd(OH)2. In some embodiments, in step c), the chiral acid comprises D-(+)-10-camphorsulfonic acid, (R)-mandelic acid, (R)-(-)-1,1’-binaphthyl-2,2’-diylhydrogenphospate, di-p-toluoyl-D- tartaric acid, (+)-di-p-anisoyl-D-tartaric acid, L-tartaric acid, dibenzoyl-L-tartaric acid, or D- camphoric acid. In some embodiments, in step c), the chiral acid comprises D-(+)-10- camphorsulfonic acid. In some embodiments, in step c), the chiral acid comprises (R)-mandelic acid. In some embodiments, in step c), the chiral acid comprises (R)-(-)-1,1’-binaphthyl-2,2’- diylhydrogenphospate. In some embodiments, in step c), the chiral acid comprises di-p-toluoyl- D-tartaric acid. In some embodiments, in step c), the chiral acid comprises (+)-di-p-anisoyl-D- tartaric acid. In some embodiments, in step c), the chiral acid comprises L-tartaric acid. In some embodiments, in step c), the chiral acid comprises dibenzoyl-L-tartaric acid. In some embodiments, in step c), the chiral acid comprises D-camphoric acid. In some embodiments, in step c), the chiral acid is D-(+)-10-camphorsulfonic acid, (R)-mandelic acid, (R)-(-)-1,1’- binaphthyl-2,2’-diylhydrogenphospate, di-p-toluoyl-D-tartaric acid, (+)-di-p-anisoyl-D-tartaric acid, L-tartaric acid, dibenzoyl-L-tartaric acid, or D-camphoric acid. In some embodiments, in step c), the chiral acid is D-(+)-10-camphorsulfonic acid. In some embodiments, in step c), the chiral acid is (R)-mandelic acid. In some embodiments, in step c), the chiral acid is (R)-(-)-1,1’- binaphthyl-2,2’-diylhydrogenphosphate. In some embodiments, in step c), the chiral acid is di- p-toluoyl-D-tartaric acid. In some embodiments, in step c), the chiral acid is (+)-di-p-anisoyl-D-tartaric acid. In some embodiments, in step c), the chiral acid is L-tartaric acid. In some embodiments, in step c), the chiral acid is dibenzoyl-L-tartaric acid. In some embodiments, in step c), the chiral acid is D-camphoric acid. In some embodiments, step c) comprises the use of a solvent. In some embodiments, the solvent comprises MeOH, EtOH, EtOAc, THF, DCM, MeCN, 2-MeTHF, IPAc, n-BuOH, or a mixture thereof. In some embodiments, the solvent comprises MeOH. In some embodiments, the solvent comprises EtOH. In some embodiments, the solvent comprises EtOAc. In some embodiments, the solvent comprises THF. In some embodiments, the solvent comprises DCM. In some embodiments, the solvent comprises MeCN. In some embodiments, the solvent comprises 2-MeTHF. In some embodiments, the solvent comprises IPAc. In some emb...

Claims

CLAIMS What is claimed is:

1. A solid form of a compound of Formula (I):(I), wherein the solid form is: crystalline polymorphic Form J; crystalline polymorphic Form N; crystalline polymorphic Form O; or crystalline polymorphic Form AG.

2. The solid form of claim 1, wherein the solid form is crystalline polymorphic Form AG.

3. The solid form of claim 2, wherein the solid form is Form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 degrees 2θ, and at least two peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ.

4. The solid form of claim 2 or 3, wherein the solid form is Form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 degrees 2θ, and at least three peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ.

5. The solid form of any one of claims 2 to 4, wherein the solid form is Form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 degrees 2θ, and at least four peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ.

6. The solid form of any one of claims 2 to 5, wherein the solid form is Form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 degrees 2θ,and at least five, at least six, at least seven, or at least eight peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ.

7. The solid form of claim 2 or 3, wherein the solid form is Form AG characterized by an XRPD pattern comprising: a peak at approximately 13.1 ± 0.2 degrees 2θ and a peak at approximately 19.3 ± 0.2 degrees 2θ; and at least one peak selected from the group consisting of 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ.

8. The solid form of any one of claims 2 to 4 or 7, wherein the solid form is Form AG characterized by an XRPD pattern comprising: a peak at approximately 13.1 ± 0.2 degrees 2θ and a peak at approximately 19.3 ± 0.2 degrees 2θ; and at least two peaks selected from the group consisting of 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ.

9. The solid form of any one of claims 2 to 5, 7, or 8, wherein the solid form is Form AG characterized by an XRPD pattern comprising: a peak at approximately 13.1 ± 0.2 degrees 2θ and a peak at approximately 19.3 ± 0.2 degrees 2θ; and at least three peaks selected from the group consisting of 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ.

10. The solid form of any one of claims 2 to 9, wherein the solid form is Form AG characterized by an XRPD pattern comprising: a peak at approximately 13.1 ± 0.2 degrees 2θ and a peak at approximately 19.3 ± 0.2 degrees 2θ; and at least four, at least five, at least six, or at least seven peaks selected from the group consisting of 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ.

11. The solid form of claim 2 or 3, wherein the solid form is Form AG characterized by an XRPD pattern comprising: at least two peaks selected from the group consisting of 13.1 ± 0.2, 19.3 ± 0.2, and 15.4 ± 0.2 degrees 2θ; and at least one peak selected from the group consisting of 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ.

12. The solid form of claim 2, wherein the solid form is Form AG characterized by an XRPD pattern comprising characteristic peaks at approximately 19.3 ± 0.2, 13.1 ± 0.2, and 15.4 ± 0.2 degrees 2θ.

13. The solid form of claim 12, wherein the XRPD pattern further comprises at least one additional characteristic peak selected from the group consisting of: approximately 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ.

14. The solid form of claim 12, wherein the XRPD pattern further comprises characteristic peaks at approximately 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ.

15. The solid form of any one of claims 2 to 8, wherein the solid form is Form AG characterized by an XRPD pattern comprising: peaks at approximately 13.1 ± 0.2, 19.3 ± 0.2, and 15.4 ± 0.2 degrees 2θ; and at least two, at least three, at least four, or at least five peaks selected from the group consisting of 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ.

16. The solid form of any one of claims 2 to 9, wherein the solid form is Form AG characterized by an XRPD pattern comprising: peaks at approximately 13.1 ± 0.2, 19.3 ± 0.2, 15.4 ± 0.2 degrees 2θ, and 18.5 ± 0.2 degrees 2θ; and one or more peaks at approximately 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, or 10.7 ± 0.2 degrees 2θ.

17. The solid form of any one of claims 2 to 16, wherein the solid form is Form AG characterized by a TGA thermogram showing about 1.1% weight loss up to 180 °C.

18. The solid form of any one of claims 2 to 17, wherein the solid form is Form AG characterized by a DSC thermogram comprising an endothermic peak at about 219 °C.

19. The solid form of any one of claims 2 to 18, wherein the solid form is Form AG characterized by two or more of: a. an XRPD pattern comprising characteristic peaks at approximately 19.3 ± 0.2, 13.1 ± 0.2, and 15.4 ± 0.2 degrees 2θ; b. a TGA thermogram showing about 1.1% weight loss at 180 °C; and c. a DSC thermogram comprising an endothermic peak at about 219 °C.

20. The solid form of any one of claims 3 to 19, wherein the XRPD spectrum is obtained using a Cu Kα source.

21. The solid form of claim 1, wherein the solid form is crystalline polymorphic Form J.

22. The solid form of claim 21, wherein the solid form is Form J characterized by an XRPD diffraction pattern comprising at least two XRPD peaks selected from the group consisting of approximately 16.4 ± 0.2, 6.8 ± 0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.42 ±0.2, 13.7 ±0.2, 8.8 ±0.2, and 19.7 ±0.2 degrees 2θ.

23. The solid form of claim 21 or 22, wherein the solid form is Form J characterized by an XRPD diffraction pattern comprising at least three XRPD peaks selected from the group consisting of about 16.4 ±0.2, 6.8 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ± 0.2, 8.4 ±0.2, 13.7 ±0.2, 8.8 ±0.2, and 19.7 ±0.2 degrees 2θ.

24. The solid form of any one of claims 21 to 23, wherein the solid form is Form J characterized by an XRPD diffraction pattern comprising at least four XRPD peaks selected from the group consisting of about 16.4 ±0.2, 6.8 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.4 ±0.2, 13.7 ±0.2, 8.8 ±0.2, and 19.7 ±0.2 degrees 2θ.

25. The solid form of any one of claims 21 to 24, wherein the solid form is Form J characterized by an XRPD diffraction pattern comprising: XRPD peaks at 6.8±0.2 degrees 2θ and 8.8±0.2 degrees 2θ; andat least two XRPD peaks selected from the group consisting of about 16.4 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.4 ±0.2, 13.7 ±0.2, and 19.7 ±0.2 degrees 2θ.

26. The solid form of any one of claims 21 to 25, wherein the solid form is Form J characterized by an XRPD diffraction pattern comprising: XRPD peaks at 6.8±0.2 degrees 2θ and 8.8±0.2 degrees 2θ; and at least three XRPD peaks selected from the group consisting of about 16.4 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.4 ±0.2, 13.7 ±0.2, and 19.7 ±0.2 degrees 2θ.

27. The solid form of any one of claims 21 to 26, wherein the solid form is Form J characterized by an XRPD diffraction pattern comprising: XRPD peaks at 6.8±0.2 degrees 2θ and 8.8±0.2 degrees 2θ; and at least four XRPD peaks selected from the group consisting of about 16.4 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.4 ±0.2, 13.7 ±0.2, and 19.7 ±0.2 degrees 2θ.

28. The solid form of any one of claims 21 to 27, wherein the solid form is Form J characterized by an XRPD diffraction pattern comprising the XRPD peaks 16.4 ±0.2, 6.8 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.4 ±0.2, 13.7 ±0.2, 8.8 ±0.2, and 19.7 ±0.2 degrees 2θ.

29. The solid form of any one of claims 21 to 28, wherein the solid form is Form J characterized by a thermal gravimetric analysis (TGA) thermogram showing about 2.6% weight loss up to 180 °C.

30. The solid form of any one of claims 21 to 29, wherein the solid form is Form J characterized by a differential scanning calorimetry (DSC) thermogram comprising at least one endothermic peak at about 110 °C, about 138 °C, or about 178 °C.

31. The solid form of any one of claims 21 to 30, wherein the solid form is Form J characterized by a differential DSC thermogram comprising endothermic peaks at about 110 °C, about 138 °C, and about 178 °C.

32. The solid form of any one of claims 21 to 31, wherein the solid form is Form J characterized by two or more of: a. an XRPD pattern substantially as set forth in Figure 1; b. a TGA thermogram showing about 2.6% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 110 °C, about 138 °C, and about 178 °C.

33. The solid form of any one of claims 21 to 32, wherein the XRPD spectrum is obtained using a Cu Kα source.

34. The solid form of claim 1, wherein the solid form is crystalline polymorphic Form O.

35. The solid form of claim 34, wherein the solid form is characterized by an XRPD diffraction pattern comprising at least two XRPD peaks selected from the group consisting of approximately 15.1 ±0.2, 19.7 ±0.2, 9.3 ±0.2, 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2, and 15.9 ±0.2 degrees 2θ.

36. The solid form of claim 34 or 35, wherein the solid form is characterized by an XRPD diffraction pattern comprising: XRPD peaks at approximately 15.1 ±0.2, 19.7 ±0.2, and 9.3 ±0.2 degrees 2θ; and at least three additional peaks selected from the group consisting of approximately 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2, and 15.9 ±0.2 degrees 2θ.

37. The solid form of any one of claims 34 to 36, wherein the solid form is characterized by an XRPD diffraction pattern comprising XRPD peaks at approximately 15.1 ±0.2, 19.7 ±0.2, 9.3 ±0.2, 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2, and 15.9 ±0.2 degrees 2θ.

38. The solid form of any one of claims 34 to 37, wherein the solid form is characterized by a TGA thermogram showing about 3.1% weight loss up to 180 °C.

39. The solid form of any one of claims 34 to 38, wherein the solid form is Form O characterized by a DSC thermogram comprising at least one endothermic peak at about 70 °C or about 195 °C.

40. The solid form of any one of claims 34 to 39, wherein the solid form is Form O characterized by a DSC thermogram comprising endothermic peaks at about 70 °C and about 195 °C.

41. The solid form of claim 34 to 40, wherein the solid form is Form O characterized by two or more of: a. XRPD peaks at approximately 15.1 ±0.2, 19.7 ±0.2, 9.3 ±0.2, 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2, and 15.9 ±0.2 degrees 2θ; b. a TGA thermogram showing about 3.1% weight loss up to 180 °C; and c. a DSC thermogram comprising endothermic peaks at about 70 °C and about 195 °C.

42. The solid form of any one of claims 35 to 41, wherein the XRPD spectrum is obtained using a Cu Kα source.

43. The solid form of claim 1, wherein the solid form is crystalline polymorphic Form N.

44. The solid form of claim 43, wherein the solid form is characterized by an XRPD diffraction pattern comprising at least two peaks selected from the group consisting of approximately 15.7 ± 0.2, 16.1 ± 0.2, 15.5 ± 0.2, 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2, and 6.6 ± 0.2 degrees 2θ.

45. The solid form of claim 43 or 44, wherein the solid form is characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of approximately 15.7 ± 0.2, 16.1 ± 0.2, 15.5 ± 0.2, 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2, and 6.6 ± 0.2 degrees 2θ.

46. The solid form of any one of claims 43 to 45, wherein the solid form is characterized by an XRPD pattern comprising: at least one peak selected from the group consisting of approximately 15.7 ± 0.2, 16.1 ± 0.2, and 15.5 ± 0.2 degrees 2θ; and at least one, at least two, at least three, or at least four peaks selected from the group consisting of approximately 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2, and 6.6 ± 0.2 degrees 2θ.

47. The solid form of any one of claims 43 to 46, wherein the solid form is characterized by an XRPD pattern peaks at approximately 15.7 ± 0.2, 16.1 ± 0.2, 15.5 ± 0.2, 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2, and 6.6 ± 0.2 degrees 2θ.

48. The solid form of any one of claims 43 to 47, wherein the solid form is characterized by a TGA thermogram showing about 3.9% weight loss up to 180 °C.

49. The solid form of any one of claims 43 to 48, wherein the solid form is characterized by a DSC thermogram comprising at least one endothermic peak at about 60 °C, about 131 °C, or about 172 °C.

50. The solid form of any one of claims 43 to 49, wherein the XRPD spectrum is obtained using a Cu Kα source.

51. A pharmaceutical composition comprising the solid form of any one of claims 1 to 50, and at least one pharmaceutically acceptable excipient.

52. The pharmaceutical composition of claim 51, wherein the solid form is the solid form of any one of claims 2 to 20.

53. The pharmaceutical composition of claim 51, wherein the solid form is the solid form of any one of claims 21 to 33.

54. The pharmaceutical composition of claim 51, wherein the solid form is the solid form of any one of claims 34 to 42.

55. The pharmaceutical composition of claim 51, wherein the solid form is the solid form of any one of claims 43 to 50.

56. A method of treating cancer in a subject comprising administering to the subject a therapeutically effective amount of the solid form of any one of claims 1 to 50, or the pharmaceutical composition of any one of claims 51 to 55.

57. The method of claim 56, wherein the cancer is characterized by a KRas mutation.

58. The method of claim 57, wherein the KRas mutation corresponds to a KRasG12D mutation.

59. The method of any one of claims 56 to 58, wherein the cancer is tissue agnostic.

60. The method of any one of claims 56 to 59, wherein the cancer is pancreatic cancer, lung cancer, or colorectal cancer.

61. A method for regulating activity of a KRas mutant protein comprising reacting the mutant protein with solid form of any one of claims 1 to 50, or the pharmaceutical composition of any one of claims 51 to 55.

62. A method for inhibiting proliferation of a cell population comprising contacting the cell population with solid form of any one of claims 1 to 50, or the pharmaceutical composition of any one of claims 51 to 55.

63. The method of claim 62, wherein the inhibition of proliferation is measured as a decrease in cell viability of the cell population.

64. A method for inhibiting tumor metastasis in a subject comprising administering to the subject a therapeutically effective amount of the solid form of any one of claims 1 to 50, or the pharmaceutical composition of any one of claims 51 to 55.

65. A solid form of a compound of Formula (I) according to any one of claims 1 to 50, or a pharmaceutical composition of any one of claims 51 to 55, for use in treating cancer.

66. Use of the solid form of a compound of Formula (I) according to any one of claims 1 to 50, or the pharmaceutical composition of any one of claims 51 to 55, for treating cancer.

67. Use of the solid form of a compound of Formula (I) according to any one of claims 1 to 50, or the pharmaceutical composition of any one of claims 51 to 55, in the manufacture of a medicament for treating cancer.

68. A process for preparing a compound of Formula (I),, the process comprising the steps of:a) reacting a compound of Formula (A) with a compound of Formula (B), to prepare a compound of Formula (C):b) reacting the compound of Formula (C) with one or more reagents to prepare a compound of Formula (D):c) reacting the compound of Formula (D) with an oxidant to prepare a compound of Formula (E):d) reacting the compound of Formula (E) with a compound of Formula (F) to prepare a compound of Formula (G):e) reacting the compound of Formula (G) with a compound of Formula (Ha) to prepare a compound of Formula (Ja):butyloxycarbonyl; and f) reacting the compound of Formula (Ja) with an acidic reagent to prepare the compound of Formula (I).

69. A process for preparing a compound of Formula (I),the process comprising the steps of: a) reacting a compound of Formula (A) with a compound of Formula (B), to prepare a compound of Formula (C):b) reacting the compound of Formula (C) with one or more reagents to prepare a compound of Formula (D):c) reacting the compound of Formula (D) with an oxidant to prepare a compound of Formula (E):d) reacting the compound of Formula (E) with a compound of Formula (F) to prepare a compound of Formula (G):e) reacting the compound of Formula (G) with a compound of Formula (H) to prepare a compound of Formula (J):is para-methoxybenzyl; and f) reacting the compound of Formula (J) with an acidic reagent to prepare the compound of Formula (I); and wherein steps c) and d) occur in the same reaction vessel.

70. The process of claim 68 or 69, wherein the compound of Formula (I) prepared in step f) is isolated as crystalline form AG.

71. The process of claim 68, wherein steps c) and d) occur in the same reaction vessel.

72. The process of claim 68, wherein the compound of Formula (Ha) is prepared by a process comprising the steps of:a) reacting a compound of Formula (Hu) with NBS to prepare a compound of Formulab) reacting the compound of Formula (Hv) with hydrogen over a Platinum / Vanadium / Carbon catalyst, to prepare a compound of Formula (Hw);d) reacting the compound of Formula (Hr) with di-tert-butyl dicarbonate to prepare a compound of Formula (Hs):e) reacting the compound of Formula (Hs) with MeO2CCF2SO2F in the presence of CuI to prepare a compound of Formula (Ht):f) reacting the compound of Formula (Ht) with i-PrMgCl·LiCl and B(Oi-Pr)3 to prepare the compound of Formula (Ha).

73. The process of claim 69, wherein the compound of Formula (H) is prepared by a process comprising the steps of: a) reacting a compound of Formula (Hu) with NBS to prepare a compound of Formula (Hv):b) reacting the compound of Formula (Hv) with hydrogen over a Platinum / Vanadium / Carbon catalyst, to prepare a compound of Formula (Hw);c) reacting the compound of Formula (Hw) with para-methoxy benzyl chloride (PMBCl) to prepare a compound of Formula (Hx):d) reacting the compound of Formula (Hx) with NIS to prepare a compound of Formula (Hy):e) reacting the compound of Formula (Hy) with MeO2CCF2SO2F in the presence of CuI to prepare a compound of Formula (Hz):f) reacting the compound of Formula (Hz) with n-BuLi and B(OiPr)3 to prepare the compound of Formula (H).

74. The process of claim 72 or 73, wherein steps a)-f) occur in the same reaction vessel.

75. The process of claim 68 or 69, wherein the compound of Formula (B) is prepared by a process comprising the steps of:a) reacting a compound of Formula (Bv) with benzyl bromide to prepare a compound of Formula (Bw):(Bv) (Bw); b) reacting the compound of Formula (Bw) with s-BuLi, TMEDA, and acetaldehyde to prepare a mixture of a compound of Formula (Bx’) and a compound of Formula (Bx’’):c) reacting the mixture of a compound of Formula (Bx’) and a compound of Formula (Bx’’) with H2, Pd / C, and D(+)-10-camphorsulfonic acid to prepare a compound of Formula (By):d) reacting the compound of Formula (By) with (Boc)2O to prepare a compound of Formula (Bz):e) reacting the compound of Formula (Bz) with a basic reagent to prepare the compound of Formula (B).

76. The process of claim 75, wherein steps a) – e) occur in the same reaction vessel.

77. The process of claim 68 or 69, wherein the compound of Formula (A) is prepared by a process comprising the steps of a) reacting a compound of Formula (Aw) with TMPMgCl·LiCl, and BrCF2CF2Br to prepare a compound of Formula (Ax):b) reacting the compound of Formula (Ax) with NHS and EDC to prepare a compound of Formula (Ay):c) reacting the compound of Formula (Ay) with S-methylisothiourea to prepare a compound of Formula (Az):d) reacting the compound of Formula (Az) with NMI and DMA to prepare a compound of Formula (A).

78. The process of claim 77, wherein steps b) and c) occur in the same reaction vessel.

79. The process of claim 77, wherein step c) comprises the use of: vii. S-methylisothirourea hemisulfate salt, NaHCO3, and water; viii. Ecosorb ® C941; and ix. MeCN in water.

80. The process of claim 68, wherein: the compound of Formula (A) is prepared by the process of claim 77; the compound of Formula (B) is prepared by the process of claim 75; and the compound of Formula (Ha) is prepared by the process of claim 72.

81. The process of claim 69, wherein: the compound of Formula (A) is prepared by the process of claim 77; the compound of Formula (B) is prepared by the process of claim 75; and the compound of Formula (H) is prepared by the process of claim 73.

82. The process of claim 68 or 69, wherein the compound of Formula (A) is prepared by any of the exemplary processes disclosed herein, such as the process of EXAMPLE 5.

83. The process of claim 68 or 69, wherein the compound of Formula (B) is prepared by any of the exemplary processes disclosed herein, such as the process of EXAMPLE 6.

84. The process of claim 68, wherein the compound of Formula (Ha) is prepared by any of the exemplary processes disclosed herein, such as the process of EXAMPLE 11.

85. The process of claim 69, wherein the compound of Formula (H) is prepared by any of the exemplary processes disclosed herein, such as the process of EXAMPLE 8.

86. A process for preparing a compound of Formula (A),, the process comprising the steps of: a) reacting a compound of Formula (Aw) with TMPMgCl·LiCl, and BrCF2CF2Br to prepare a compound of Formula (Ax):b) reacting the compound of Formula (Ax) with NHS and EDC to prepare a compound of Formula (Ay):c) reacting the compound of Formula (Ay) with S-methylisothiourea to prepare a compound of Formula (Az):d) reacting the compound of Formula (Az) with NMI and DMA to prepare a compound of Formula (A).

87. The process of claim 86, wherein steps b) and c) occur in the same reaction vessel.

88. A process for preparing a compound of Formula (B),the process comprising the steps of: a) reacting a compound of Formula (Bv) with benzyl bromide to prepare a compound of Formula (Bw):(Bw); b) reacting the compound of Formula (Bw) with s-BuLi, TMEDA, and acetaldehyde to prepare a mixture of a compound of Formula (Bx’) and a compound of Formula (Bx’’):c) reacting the mixture of a compound of Formula (Bx’) and a compound of Formula (Bx’’) with H2, Pd / C, and D(+)-10-camphorsulfonic acid to prepare a compound of Formula (By):d) reacting the compound of Formula (By) with (Boc)2O to prepare a compound of Formula (Bz):e) reacting the compound of Formula (Bz) with a basic reagent to prepare the compound of Formula (B).

89. The process of claim 88, wherein steps a)-e) occur in the same reaction vessel.

90. A process for preparing a compound of Formula (Ha),the process comprising the steps of: a) reacting a compound of Formula (Hu) with NBS to prepare a compound of Formula (Hv):b) reacting the compound of Formula (Hv) with hydrogen over a Platinum / Vanadium / Carbon catalyst, to prepare a compound of Formula (Hw);c) reacting the compound of Formula (Hw) with NIS to prepare a compound of Formula (Hr):d) reacting the compound of Formula (Hr) with di-tert-butyl dicarbonate to prepare a compound of Formula (Hs):e) reacting the compound of Formula (Hs) with MeO2CCF2SO2F in the presence of CuI to prepare a compound of Formula (Ht):f) reacting the compound of Formula (Ht) with i-PrMgCl∙LiCl and B(Oi-Pr)3 to prepare the compound of Formula (Ha).

91. A process for preparing a compound of Formula (H),the process comprising the steps of: a) reacting a compound of Formula (Hu) with NBS to prepare a compound of Formula (Hv):b) reacting the compound of Formula (Hv) with hydrogen over a Platinum / Vanadium / Carbon catalyst, to prepare a compound of Formula (Hw);c) reacting the compound of Formula (Hw) with PMBCl to prepare a compound of Formula (Hx):d) reacting the compound of Formula (Hx) with NIS to prepare a compound of Formula (Hy):e) reacting the compound of Formula (Hy) with MeO2CCF2SO2F in the presence of CuI to prepare a compound of Formula (Hz):f) reacting the compound of Formula (Hz) with n-BuLi and B(OiPr)3 to prepare the compound of Formula (H).

92. The process of claim 90 or 91, wherein steps a)-f) occur in the same reaction vessel.

93. The process of claim 90 or 91, wherein step b) comprises the use of a solvent, wherein the solvent is EtOAc or iPrOAc.

94. A compound of Formula (Ha):

95. A compound of Formula (By):

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