Light-emitting substrate and manufacturing method therefor, and display apparatus

Abstract

A light-emitting substrate (10) and a manufacturing method therefor, and a display apparatus (100). The light-emitting substrate (10) comprises: a base substrate (1), a light-emitting device, and an electrical connection structure (2). The base substrate (1) has a main surface; the light-emitting substrate (10) comprises a light-emitting region (LR) and a non-light-emitting region (NLR) at least partially surrounding the light-emitting region (LR); the light-emitting device is provided on the main surface of the base substrate (1) and located in the light-emitting region (LR); the electrical connection structure (2) comprises a first electrode (21) and an inorganic insulating layer (3); the first electrode (21) is located on the main surface of the base substrate (1); the inorganic insulating layer (3) and the first electrode (21) are stacked in a perpendicular direction perpendicular to the main surface of the base substrate (1); the inorganic insulating layer (3) is located on the side of the first electrode (21) distant from the main surface of the base substrate (1); the first electrode (21) has an upper surface distant from the base substrate (1); the inorganic insulating layer (3) covers the upper surface of the first electrode (21); a first gap is present between the inorganic insulating layer (3) and the upper surface of the first electrode (21); and the width of the first gap is less than 0.2 μm.

Description

Light-emitting substrate, manufacturing method thereof, and display device

[0001] This application claims priority to PCT patent application No. PCT / CN2023 / 135033 filed on November 29, 2023, and the contents of the above PCT patent application disclosure are hereby incorporated by reference in their entirety as part of this application. Technical Field

[0002] At least one embodiment of the present disclosure relates to a light-emitting substrate, a manufacturing method thereof, and a display device. Background Art

[0003] LED (light-emitting diode) has the advantages of low cost, high luminous efficiency, energy saving and environmental protection, and is widely used in lighting, visible light communication, luminous display and other scenarios.

[0004] One development direction of LED is towards miniaturization and micronization. After miniaturization, LED forms an array with millimeter or even micron spacing, which can achieve ultra-high resolution, so that it can be more widely used in fields such as information display.

[0005] Currently, small-sized flip-chip LED chips are widely used in backlight displays and RGB display devices. Currently, display products on the market often utilize thousands or tens of thousands of flip-chip LED chips with a single light-emitting unit, or two light-emitting units connected in series, mounted upside down on a circuit substrate. The smaller the chip size, the closer the distance between the chips, resulting in a higher contrast display.

[0006] In a miniaturized LED light-emitting panel, a single metal layer can be used to electrically connect to the LED to provide a light-emitting signal to the LED, or a double metal layer can be used to electrically connect to the LED to provide a light-emitting signal to the LED, the first metal layer in the double metal layer is electrically connected to the circuit board in the binding region, and the second metal layer in the double metal layer is overlapped with the first metal layer through vias to be electrically connected to the first metal layer. Compared with the single metal layer method, the double metal layer method facilitates layered wiring, and the wiring flexibility and diversity are higher, so more partitions can be achieved, thereby achieving more detailed control of the light-emitting substrate. However, it is necessary to ensure the reliability of the double metal layers overlapping each other through vias.

[0007] Summary of the Invention

[0008] At least one embodiment of the present disclosure provides a light-emitting substrate, which includes: a base substrate, a light-emitting device, and an electrical connection structure. The base substrate has a main surface, the light-emitting substrate includes a light-emitting area and a non-light-emitting area at least partially surrounding the light-emitting area; the light-emitting device is arranged on the main surface of the base substrate and located in the light-emitting area; the electrical connection structure includes a first electrode and an inorganic insulating layer; the first electrode is located on the main surface of the base substrate; the inorganic insulating layer is stacked in a vertical direction perpendicular to the main surface of the base substrate and is located on a side of the first electrode away from the main surface of the base substrate; the first electrode has an upper surface away from the base substrate, the inorganic insulating layer covers the upper surface of the first electrode, and a first gap exists between the inorganic insulating layer and the upper surface of the first electrode, and the width of the first gap is less than 0.2μm.

[0009] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the width of the first gap is less than 0.1 μm.

[0010] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the width of the first gap is less than 0.05 μm.

[0011] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the first electrode also has a side surface intersecting with the upper surface, the inorganic insulating layer covers the side surface of the first electrode, and the inorganic insulating layer also covers the side surface of the first electrode, and there is a second gap between the inorganic insulating layer and the side surface of the first electrode, and the width of the second gap is less than 0.2μm.

[0012] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the width of the second gap is less than 0.1 μm.

[0013] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the width of the second gap is less than 0.05 μm.

[0014] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the inorganic insulating layer includes a top and a side, the top of the inorganic insulating layer covers the upper surface, the side of the inorganic insulating layer is connected to the top of the inorganic insulating layer and covers the side surface of the first electrode, the top of the inorganic insulating layer includes a main body and a protrusion, the main body covers the upper surface of the first electrode, and the protrusion extends from the main body along a horizontal direction parallel to the main surface of the base substrate and protrudes from the main body and the side surface.

[0015] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the thickness of the inorganic insulating layer is within a preset range, and as the thickness of the inorganic insulating layer increases, the length of the protrusion in the horizontal direction becomes smaller.

[0016] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the preset range includes at least 1200 angstroms to 3500 angstroms.

[0017] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the inorganic insulating layer includes a top and a side, the top of the inorganic insulating layer covers the upper surface, and the side of the inorganic insulating layer is connected to the top of the inorganic insulating layer and covers the side surface of the first electrode; the inorganic insulating layer has a boundary portion located at the junction of the top and the side, the boundary portion corresponds to the edge of the first electrode away from the base substrate, the top and the side in the boundary portion are continuously connected, and the boundary portion is dense and has no cracks.

[0018] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the angle between the surface of the side portion and the main surface of the base substrate is 50° to 60°, and the thickness of the first electrode is 2.7 μm; or, the angle between the surface of the side portion and the main surface of the base substrate is 55° to 65°, and the thickness of the first electrode is 3.6 μm.

[0019] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the electrical connection structure further includes: a buffer layer, the buffer layer and the first electrode are stacked in the vertical direction; the thickness range of the buffer layer is 2000 angstroms to 2800 angstroms, and the stress range of the buffer layer is -360 MPa to -440 MPa; or, the thickness range of the buffer layer is 3600 angstroms to 4500 angstroms, and the stress range of the buffer layer is -360 MPa to -440 MPa; or, the thickness range of the buffer layer is 4600 angstroms to 5400 angstroms, and the stress range of the buffer layer is -360 MPa to -440 MPa; or, the thickness range of the buffer layer is 5800 angstroms to 6200 angstroms, and the stress range of the buffer layer is less than -800 MPa.

[0020] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the thickness of the first electrode is 1.8 μm to 3.6 μm.

[0021] For example, in the light-emitting substrate provided by at least one embodiment of the present disclosure, the inorganic insulating layer includes an edge portion, and the edge portion is stacked and in contact with the buffer layer in the vertical direction.

[0022] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the material of the inorganic insulating layer includes at least one of silicon nitride, silicon oxide or silicon oxynitride; the material of the buffer layer includes at least one of silicon nitride, silicon oxide or silicon oxynitride; and the material of the first electrode is copper.

[0023] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the base substrate is a glass substrate, and the glass substrate does not contain sodium (Na) or calcium (Ca) components.

[0024] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the electrical connection structure also includes: a second electrode, which is stacked with the first electrode and the inorganic insulating layer in the vertical direction, and is located on the side of the inorganic insulating layer away from the first electrode, and is electrically connected to the first electrode through a first via hole passing through the inorganic insulating layer.

[0025] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the inorganic insulating layer includes: a first sub-inorganic insulating layer and a second sub-inorganic insulating layer stacked on each other in the vertical direction, the second sub-inorganic insulating layer is located on the side of the first sub-inorganic insulating layer away from the base substrate, and the first via passes through the first sub-inorganic insulating layer and the second sub-inorganic insulating layer.

[0026] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the thickness of the first sub-inorganic insulating layer is greater than 4000 angstroms.

[0027] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the electrical connection structure includes a first electrical connection structure, the first electrical connection structure having the first electrode and the second electrode, and the first electrode and the second electrode of the first electrical connection structure are configured to provide the light-emitting device with an electrical signal for driving the light-emitting device to emit light.

[0028] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the light-emitting device includes a first electrode pin and a second electrode pin; the light-emitting substrate also includes a circuit board located in the non-light-emitting area, the first electrode of the first electrical connection structure is electrically connected to the circuit board to receive a power signal from the circuit board, and the second electrode of the first electrical connection structure is electrically connected to the first electrode pin of the light-emitting device to provide the power signal to the light-emitting device, and the power signal is the electrical signal for driving the light-emitting device to emit light; the light-emitting substrate includes a first conductive layer and a second conductive layer, the first conductive layer includes the first electrode, and the second conductive layer includes the second electrode; the light-emitting substrate also includes a driving circuit, and the driving circuit is at least partially located in the light-emitting area; the second conductive layer also includes a connecting electrode, the first end of the connecting electrode is electrically connected to the driving circuit, and the second end of the connecting electrode is electrically connected to the second electrode pin of the light-emitting device to provide the light-emitting device with a light-emitting driving signal, and the light-emitting device emits light under the drive of the power signal and the light-emitting driving signal.

[0029] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the inorganic insulating layer includes a first sub-portion and a second sub-portion arranged in the vertical direction, and the second sub-portion is located on the side of the first sub-portion away from the base substrate; the first sub-portion has a first slope surface surrounding the first via hole, and the second sub-portion has a second slope surface surrounding the first via hole; the first electrode has a covering portion that is not exposed by the first via hole, and the covering portion of the first electrode has an upper surface away from the base substrate, a first angle is formed between the surface where the first slope surface is located and the upper surface of the covering portion, a second angle is formed between the surface where the second slope surface is located and the upper surface of the covering portion, and the second angle is greater than the first angle; the second sub-inorganic insulating layer includes an upper portion and a lower portion, the lower portion is in contact with the first sub-inorganic insulating layer, the upper portion is located on the side of the lower portion away from the first sub-inorganic insulating layer, the upper portion serves as the second sub-portion, and the lower portion and the first sub-inorganic insulating layer form a whole as the first sub-portion.

[0030] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the warping level of the base substrate is less than 0.1 mm.

[0031] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the light-emitting substrate includes a plurality of the electrical connection structures, the plurality of the electrical connection structures further include a second electrical connection structure, the second electrical connection structure has a first electrode and a second electrode of the electrical connection structure; the light-emitting substrate further includes a driving circuit, the driving circuit is at least partially located in the light-emitting area, the light-emitting substrate includes a light-emitting array, the light-emitting array includes a plurality of light-emitting units arranged in an array, each of the light-emitting units includes a plurality of the light-emitting devices, and the driving circuit is provided corresponding to each light-emitting unit to control the light-emitting condition of the light-emitting device of the light-emitting unit; the plurality of light-emitting units of the light-emitting array include a first light-emitting unit and a second light-emitting unit located in the same column; the first electrode of the second electrical connection structure and the circuit The board is electrically connected to receive a light-emitting control signal from the circuit board, the second electrode of the second electrical connection structure is electrically connected to the input end of the driving circuit corresponding to the first light-emitting unit, and the light-emitting control signal includes a light-emitting driving signal for controlling the light-emitting state of the light-emitting device and / or a timing control signal for controlling the light-emitting device to emit light; the multiple electrical connection structures also include a third electrical connection structure, the third electrical connection structure has a first electrode and a second electrode of the electrical connection structure; the second electrode of the third connection structure is electrically connected to the output end of the driving circuit corresponding to the first light-emitting unit, and the first electrode of the third electrical connection structure is electrically connected to the input end of the driving circuit corresponding to the second light-emitting unit to provide the light-emitting control signal to the second light-emitting unit.

[0032] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the multiple electrical connection structures also include a fourth electrical connection structure, and the fourth electrical connection structure has a first electrode and a second electrode of the electrical connection structure; the first electrode of the fourth electrical connection structure is grounded, and the second electrode of the fourth electrical connection structure is electrically connected to the ground signal input terminal of the driving circuit.

[0033] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the light-emitting device is a sub-millimeter light-emitting diode or a micro light-emitting diode.

[0034] At least one embodiment of the present disclosure further provides a display device, comprising any one of the light-emitting substrates provided in the embodiments of the present disclosure. The light-emitting substrate is a display substrate, the light-emitting area is a display area and includes sub-pixels, and the sub-pixels include the light-emitting device; the electrical signal provided by the first electrode and the second electrode of the first electrical connection structure to the light-emitting device for driving the light-emitting device to emit light is a display drive signal to drive the light-emitting device to display an image; or the light-emitting substrate serves as a backlight source for the display device and is configured to provide light for display to the display substrate.

[0035] At least one embodiment of the present disclosure provides a method for manufacturing a light-emitting substrate, comprising: providing a base substrate, wherein the base substrate has a main surface and includes a light-emitting area and a non-light-emitting area at least partially surrounding the light-emitting area; arranging a light-emitting device on the main surface of the base substrate, wherein the light-emitting device is located in the light-emitting area; and forming an electrical connection structure on the main surface of the base substrate, comprising: forming a first electrode, wherein the first electrode is located on the main surface of the base substrate; forming an inorganic insulating layer, wherein the inorganic insulating layer and the first electrode are stacked in a vertical direction perpendicular to the main surface of the base substrate, and are located on a side of the first electrode away from the main surface of the base substrate, wherein the first electrode has an upper surface away from the base substrate, the inorganic insulating layer covers the upper surface of the first electrode, and the inorganic insulating layer is directly and tightly fitted to the upper surface of the first electrode.

[0036] For example, in the method for manufacturing a light-emitting substrate provided in at least one embodiment of the present disclosure, the inorganic insulating layer is formed by chemical vapor deposition. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present disclosure, rather than limiting the present disclosure.

[0038] FIG1 is a schematic diagram of a conductive structure of a light-emitting substrate with a gap between a metal electrode and an inorganic layer;

[0039] FIG2 is a schematic plan view of a local section of a conductive structure of a light-emitting substrate where bubbling occurs;

[0040] FIG3 is a cross-sectional view of the bubble position in the dotted circle in FIG2;

[0041] FIG4 is an enlarged view of the position of the dotted circle in FIG3 ;

[0042] FIG5A is a schematic diagram of the overall structure of a light-emitting substrate provided by an embodiment of the present disclosure;

[0043] FIG5B is a cross-sectional view taken under a scanning electron microscope of an electrical connection structure of a light-emitting substrate provided by an embodiment of the present disclosure;

[0044] FIG5C is a cross-sectional view taken under a scanning electron microscope of another electrical connection structure of a light-emitting substrate provided in one embodiment of the present disclosure;

[0045] 5D is a cross-sectional view taken under a scanning electron microscope of another electrical connection structure of a light-emitting substrate provided in one embodiment of the present disclosure;

[0046] FIG5E is a cross-sectional view taken under a scanning electron microscope of another electrical connection structure of a light-emitting substrate provided in one embodiment of the present disclosure;

[0047] 5F is a cross-sectional view taken under a scanning electron microscope of another electrical connection structure of a light-emitting substrate provided in one embodiment of the present disclosure;

[0048] 5G-5H are cross-sectional views taken under a scanning electron microscope of an electrical connection structure having different film layer parameters provided in an embodiment of the present disclosure;

[0049] FIG6 is a plan view of an electrical connection structure of a light-emitting substrate provided by an embodiment of the present disclosure;

[0050] FIG7 is a schematic cross-sectional view along line A1-A2 in FIG6 ;

[0051] FIG8 is another schematic cross-sectional view along line A1-A2 in FIG6 ;

[0052] FIG9A is a schematic diagram of an electrical connection structure located in a light-emitting region and a non-light-emitting region of a display substrate provided by an embodiment of the present disclosure;

[0053] FIG9B is a schematic diagram of a display device provided by at least one embodiment of the present disclosure. DETAILED DESCRIPTION

[0054] To make the purpose, technical solutions, and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. The embodiments described below are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0055] Unless otherwise defined, the technical or scientific terms used herein should have the usual meanings understood by persons of ordinary skill in the field to which the invention belongs. The words "first", "second" and similar terms used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0056] MLED light-emitting substrates currently have the following problems.

[0057] (1) For MLED light-emitting substrates, such as MLED light-emitting substrates using glass substrates, when bonding the MLED, it is found that the glass substrate is significantly warped and cannot meet the warping specification (<0.2mm), thereby making it impossible to perform bonding rework, resulting in the product being unable to proceed to subsequent processes.

[0058] (2) FIG1 is a schematic diagram showing a conductive structure of a light-emitting substrate in which a gap S (the black portion is the gap S) is provided between the metal electrode 21a and the inorganic layer 3a. In this case, the gap between the metal electrode and the inorganic layer causes the conductive structure to be unstable and to have poor resistance to pressure and impact.

[0059] (3) Figure 2 is a schematic plan view of a local section of a conductive structure of a light-emitting substrate experiencing bubbling; Figure 3 is a cross-sectional view of the bubbling location within the dashed circle in Figure 2; and Figure 4 is an enlarged view of the dashed circle location in Figure 3. Referring to Figures 2-4, current glass-based MLED products using SDL glass can suffer from surface-to-surface corrosion during reliability testing. This is primarily due to the abnormal growth of Na / Ca ions precipitated from the glass itself during environmental testing, which leads to corrosion of the conductive metal layer and bubbling defects, severely impacting the reliability performance of the MLED light-emitting substrate.

[0060] At least one embodiment of the present disclosure provides a light-emitting substrate, which includes: a base substrate, a light-emitting device, and an electrical connection structure. The base substrate has a main surface, the light-emitting substrate includes a light-emitting area and a non-light-emitting area at least partially surrounding the light-emitting area; the light-emitting device is arranged on the main surface of the base substrate and located in the light-emitting area; the electrical connection structure includes a first electrode and an inorganic insulating layer; the first electrode is located on the main surface of the base substrate; the inorganic insulating layer is stacked in a vertical direction perpendicular to the main surface of the base substrate and is located on a side of the first electrode away from the main surface of the base substrate; the first electrode has an upper surface away from the base substrate, the inorganic insulating layer covers the upper surface of the first electrode, and the inorganic insulating layer is directly and tightly adhered to the upper surface of the first electrode. The light-emitting substrate provided by at least one embodiment of the present disclosure can increase the structural stability and mechanical strength of the electrical connection structure, improve the pressure resistance and impact resistance of the electrical connection structure, and is conducive to increasing the service life of the light-emitting substrate.

[0061] At least one embodiment of the present disclosure further provides a display device, comprising any one of the light-emitting substrates provided in the embodiments of the present disclosure. The light-emitting substrate is a display substrate, the light-emitting area is a display area and includes sub-pixels, and the sub-pixels include the light-emitting device; the electrical signal provided by the first electrode and the second electrode of the first electrical connection structure to the light-emitting device for driving the light-emitting device to emit light is a display drive signal to drive the light-emitting device to display an image; or the light-emitting substrate serves as a backlight source for the display device and is configured to provide light for display to the display substrate.

[0062] At least one embodiment of the present disclosure provides a method for manufacturing a light-emitting substrate, comprising: providing a base substrate, wherein the base substrate has a main surface and includes a light-emitting area and a non-light-emitting area at least partially surrounding the light-emitting area; arranging a light-emitting device on the main surface of the base substrate, wherein the light-emitting device is located in the light-emitting area; and forming an electrical connection structure on the main surface of the base substrate, comprising: forming a first electrode, wherein the first electrode is located on the main surface of the base substrate; forming an inorganic insulating layer, wherein the inorganic insulating layer and the first electrode are stacked in a vertical direction perpendicular to the main surface of the base substrate, and are located on a side of the first electrode away from the main surface of the base substrate, wherein the first electrode has an upper surface away from the base substrate, the inorganic insulating layer covers the upper surface of the first electrode, and there is a first gap between the inorganic insulating layer and the upper surface of the first electrode, and the width of the first gap is less than 0.2 μm.

[0063] For example, FIG5A is a schematic diagram of the overall structure of a light-emitting substrate provided in one embodiment of the present disclosure. The light-emitting substrate 10 provided in at least one embodiment of the present disclosure includes a light-emitting area LR and a non-light-emitting area NLR that at least partially surrounds the light-emitting area LR; a light-emitting unit PU is provided on the main surface of the base substrate 1, and the light-emitting unit PU is located in the light-emitting area LR and includes a light-emitting device. For example, each light-emitting unit PU includes a plurality of sub-light-emitting units, for example, the light-emitting substrate 10 includes a plurality of light-emitting units PU, and the plurality of light-emitting units PU are arranged in an array. For example, FIG5A takes an example in which a light-emitting unit PU includes four sub-light-emitting units, and the four sub-light-emitting units are respectively a first sub-light-emitting unit P1, a second sub-light-emitting unit P2, a third sub-light-emitting unit P3 and a fourth sub-light-emitting unit P4. Of course, it is not limited to four, and it can also be less than or more than four, and can be designed according to specific needs.

[0064] Figure 5B is a cross-sectional view under a scanning electron microscope of an electrical connection structure of a light-emitting substrate provided by an embodiment of the present disclosure. Referring to Figure 5B, the light-emitting substrate 10 includes an electrical connection structure 2. The electrical connection structure 2 includes a first electrode 21 and an inorganic insulating layer 3; the first electrode 21 is located on the main surface of the base substrate 1; the inorganic insulating layer 3 and the first electrode 21 are stacked in a vertical direction perpendicular to the main surface of the base substrate 1, and are located on the side of the first electrode 21 away from the main surface of the base substrate 1; the first electrode 21 has an upper surface away from the base substrate 1, and the inorganic insulating layer 3 covers the upper surface 21A of the first electrode 21, and there is a first gap between the inorganic insulating layer 3 and the upper surface 21A of the first electrode 21, and the width of the first gap is less than 0.2μm. The inventors of the present application improved the width of the above-mentioned first gap through the exploration of structural parameters and process parameters, so that the light-emitting substrate provided by the embodiment of the present disclosure has better performance. Compared with the situation where there is a large gap between the inorganic layer 3a and the upper surface of the first electrode 21a similar to that shown in Figure 1, in the light-emitting substrate provided in the embodiment of the present disclosure, the width of the first gap is less than 0.2μm, which can increase the structural stability and mechanical strength of the electrical connection structure 2, improve the wrapping performance of the inorganic insulating layer 3 on the first electrode 21, and improve the pressure and impact resistance of the electrical connection structure 2, which is beneficial to improving the service life of the light-emitting substrate 10.

[0065] For example, referring to FIG5B , the width of the first slit is less than 0.1 μm, thereby further increasing the structural stability and mechanical strength of the electrical connection structure 2, improving the wrapping performance of the inorganic insulating layer 3 around the first electrode 21, and improving the compressive and impact resistance of the electrical connection structure 2, thereby facilitating an increase in the service life of the light-emitting substrate 10. In product testing, light-emitting substrates with a first slit width less than 0.1 μm exhibit significantly better compressive and impact resistance, thereby facilitating an increase in the service life of the light-emitting substrate 10.

[0066] Furthermore, referring to FIG. 5B , for example, the width of the first slit can be less than 0.05 μm, which can further increase the structural stability and mechanical strength of the electrical connection structure 2, improve the wrapping performance of the inorganic insulating layer 3 around the first electrode 21, and enhance the compressive and impact resistance of the electrical connection structure 2. In product testing, light-emitting substrates with a first slit width less than 0.05 μm exhibited improved compressive and impact resistance, which helps to extend the service life of the light-emitting substrate 10.

[0067] It should be noted that the width of the first slit refers to the width of the first slit in the direction in which the inorganic insulating layer 3 and the upper surface 21A of the first electrode 21 are opposite to each other.

[0068] For example, the inorganic insulating layer 3 is directly and tightly bonded to the upper surface 21A of the first electrode 21, i.e., there is no gap or impurity between the inorganic insulating layer 3 and the upper surface 21A of the first electrode 21. This can increase the structural stability and mechanical strength of the electrical connection structure 2, improve the compressive and impact resistance of the electrical connection structure 2, and help increase the service life of the light-emitting substrate 10.

[0069] Figure 1 is a schematic diagram of a conductive structure of a light-emitting substrate with a gap S between a metal electrode 21a and an inorganic layer 3a. The light-emitting substrate 10 provided by the embodiment of the present disclosure is different from the description of the gap S in the prior art, and is different from the "schematic diagram composed of line drawings" in the prior art. For example, in the light-emitting substrate 10 provided by the embodiment of the present disclosure, under an electron scanning microscope (SEM), the inorganic insulating layer 3 and the upper surface 21A of the first electrode 21 are also tightly fitted, and there are no bubbles, gaps and impurities composed of other substances between the two, so as to achieve the ideal effect of improving the wrapping performance of the inorganic insulating layer 3 on the first electrode 21.

[0070] For example, referring to FIG5B , the first electrode 21 further has a side surface 21B intersecting with the upper surface 21A, the inorganic insulating layer 3 covers the side surface 21B of the first electrode 21, and the inorganic insulating layer 3 also covers the side surface 21B of the first electrode 21, and a second gap exists between the inorganic insulating layer 3 and the side surface 21B of the first electrode 21, and the width of the second gap is less than 0.2 μm. The inventors of this application have improved the width of the second gap by exploring structural parameters and process parameters, so that the light-emitting substrate provided by the embodiment of the present disclosure has better performance. Compared with the case where the gap between the inorganic layer 3a and the side surface of the first electrode 21a is larger, similar to the case shown in FIG1 , in the light-emitting substrate provided by the embodiment of the present disclosure, the width of the second gap is less than 0.2 μm, which can further increase the structural stability and mechanical strength of the electrical connection structure 2, improve the wrapping performance of the inorganic insulating layer 3 on the first electrode 21, and improve the pressure and impact resistance of the electrical connection structure 2, which is conducive to increasing the service life of the light-emitting substrate 10.

[0071] For example, referring to FIG5B , the width of the second slit is less than 0.1 μm, thereby further increasing the structural stability and mechanical strength of the electrical connection structure 2, improving the wrapping performance of the inorganic insulating layer 3 around the first electrode 21, and improving the compressive and impact resistance of the electrical connection structure 2, thereby facilitating an increase in the service life of the light-emitting substrate 10. In product testing, light-emitting substrates with a second slit width less than 0.1 μm exhibit significantly better compressive and impact resistance, thereby facilitating an increase in the service life of the light-emitting substrate 10.

[0072] Furthermore, referring to FIG. 5B , for example, the width of the second slit can be less than 0.05 μm, which can further increase the structural stability and mechanical strength of the electrical connection structure 2, improve the wrapping performance of the inorganic insulating layer 3 around the first electrode 21, and enhance the compressive and impact resistance of the electrical connection structure 2. In product testing, light-emitting substrates with a second slit width less than 0.05 μm exhibited improved compressive and impact resistance, which helps to extend the service life of the light-emitting substrate 10.

[0073] It should be noted that the width of the second slit refers to the width of the second slit in the direction in which the inorganic insulating layer 3 and the side surface 21B of the first electrode 21 are opposite to each other.

[0074] For example, the inorganic insulating layer 3 is tightly attached to the side surface 21B of the first electrode 21 without bubbles, gaps or impurities therebetween, thereby achieving a more ideal effect of improving the wrapping performance of the inorganic insulating layer 3 on the first electrode 21 .

[0075] FIG5C is a cross-sectional view of another electrical connection structure of a light-emitting substrate provided by an embodiment of the present disclosure under a scanning electron microscope. For example, referring to FIG5C , the inorganic insulating layer 3 includes a top 301 and a side 302. The top 301 of the inorganic insulating layer 3 covers the upper surface. The side 302 of the inorganic insulating layer 3 is connected to the top 301 of the inorganic insulating layer 3 and covers the side surface of the first electrode 21. The top 301 of the inorganic insulating layer 3 includes a main body B and a protrusion P. The main body B covers the upper surface of the first electrode 21. The protrusion P extends from the main body B in a horizontal direction parallel to the main surface of the base substrate 1 and protrudes from the main body B and the side surface, that is, the surface of the side 302 of the inorganic insulating layer 3. For example, in FIG5C , a virtual connecting line is constructed from the bottom to the top of the outer side surface of the side 302 of the inorganic insulating layer 3, and the protrusion P is located outside the virtual connecting line.

[0076] For example, when the thickness of the inorganic insulating layer 3 is within a predetermined range, the horizontal length of the protrusion P decreases as the thickness of the inorganic insulating layer 3 increases. The thickness of the inorganic insulating layer 3 refers to, for example, the thickness of its upper portion in a direction perpendicular to the main surface of the base substrate.

[0077] For example, the preset range includes at least 1200 angstroms to 3500 angstroms. FIG5C , FIG5D , and FIG5E respectively illustrate the inorganic insulating layer 3 having thicknesses of 1200 angstroms, 2400 angstroms, and 3500 angstroms. Taking the structures under these three thickness conditions as an example, as the thickness of the inorganic insulating layer 3 increases from 1200 angstroms to 3500 angstroms, the horizontal length of the protrusion P gradually decreases.

[0078] For example, the top 301 of the inorganic insulating layer 3 covers the upper surface 21A of the first electrode 21, the side 302 of the inorganic insulating layer 3 is connected to the top 301 of the inorganic insulating layer 3, and the side 302 of the inorganic insulating layer 3 covers the side surface 21B of the first electrode 21; the inorganic insulating layer 3 has an interface IP located at the junction of the top 301 and the side 302, the interface IP corresponds to the edge of the first electrode 21 away from the base substrate 1, and in the interface IP, the top 301 of the inorganic insulating layer 3 and the side 302 of the inorganic insulating layer 3 are continuously connected, and the interface IP is dense and has no cracks. The solution in the light-emitting substrate 10 provided by the embodiment of the present disclosure, in which "the top 301 of the inorganic insulating layer 3 and the side 302 of the inorganic insulating layer 3 are continuously connected, and the interface IP is dense and has no cracks", is different from the "schematic diagram composed of line drawings" in the prior art. For example, in the light-emitting substrate 10 provided by the embodiment of the present disclosure, under an electron scanning microscope (SEM), the inorganic insulating layer 3 and the upper surface 21A of the first electrode 21 are also tightly fitted, and there are no gaps or impurities composed of other substances between the two.

[0079] For example, the angle between the surface of the side portion 302 of the inorganic insulating layer 3 and the main surface of the base substrate 1 is 50° to 60°, and the thickness of the first electrode 21 is 2.7 μm; or the angle between the surface of the side portion 302 of the inorganic insulating layer 3 and the main surface of the base substrate 1 is 55° to 65°, and the thickness of the first electrode 21 is 3.6 μm. In this way, the angle between the surface of the side portion 302 of the inorganic insulating layer 3 and the main surface of the base substrate 1 is within a suitable range, which can prevent the inorganic insulating layer 3 from breaking and ensure that the inorganic insulating layer 3 has good wrapping properties around the first electrode 21.

[0080] For example, the electrical connection structure 2 also includes: a buffer layer buffer, which is stacked vertically with the first electrode 21; in order to reduce the warping level of the base substrate 1, after a large number of experimental studies, the following thickness range of the buffer layer buffer and the stress range of the buffer layer buffer are obtained, which can effectively reduce the warping level of the base substrate, facilitate the adhesion of the various film layers of the electrical connection structure 2 on the base substrate 1, and reduce the warping of the electrical connection structure 2, thereby ensuring the reliability of the subsequent solid crystal operation of the light-emitting device and ensuring the stable operation of the light-emitting device.

[0081] For example, the thickness of the buffer layer is in the range of 2000 angstroms to 2800 angstroms, and the stress of the buffer layer is in the range of -360 MPa to -440 MPa; or,

[0082] The thickness of the buffer layer is in the range of 3600 angstroms to 4500 angstroms, and the stress of the buffer layer is in the range of -360 MPa to -440 MPa; or,

[0083] The thickness of the buffer layer is in the range of 4600 angstroms to 5400 angstroms, and the stress of the buffer layer is in the range of -360 MPa to -440 MPa; or,

[0084] The thickness of the buffer layer is in the range of 5800 angstroms to 6200 angstroms, and the stress range of the buffer layer is less than -800 MPa.

[0085] Furthermore, while meeting the aforementioned buffer layer thickness ranges and buffer layer buffer stress ranges, the effect of the thickness of the first electrode 21 on the warping of the substrate 1 and the electrical connection structure 2 was also explored. For example, the warping specification of the substrate 1 is less than 0.2 mm. For example, when the thickness of the first electrode 21 is 1.8 μm to 3.6 μm, while meeting the aforementioned buffer layer thickness ranges, buffer layer buffer stress ranges, and thickness ranges of the first electrode 21, the warping level of the substrate can be more effectively reduced, facilitating the adhesion of the various film layers of the electrical connection structure 2 on the substrate 1 and reducing the warping of the electrical connection structure 2, thereby ensuring the reliability of the subsequent die-bonding operation of the light-emitting device and ensuring the stable operation of the light-emitting device.

[0086] For example, Figures 5G-5H are cross-sectional views under a scanning electron microscope of an electrical connection structure with different film layer parameters provided in an embodiment of the present disclosure. In the electrical connection structure shown in Figure 5G, the buffer layer has a thickness of 2400 angstroms, and the material of the first electrode 21 is copper and has a thickness of 1.8 μm. In the electrical connection structure shown in Figure 5H, the buffer layer has a thickness of 4000 angstroms, and the material of the first electrode 21 is copper and has a thickness of 2.7 μm. In the structures shown in Figures 5G and 5H, the flatness of the substrate and the electrical connection structure is good, and the inorganic insulating layer 3 has good coverage of the first electrode 21.

[0087] For example, the inorganic insulating layer 3 includes an edge portion, and the edge portion is stacked and in contact with the buffer layer in a vertical direction.

[0088] For example, the inorganic insulating layer 3 may be made of at least one of silicon nitride, silicon oxide, or silicon oxynitride; the buffer layer may be made of at least one of silicon nitride, silicon oxide, or silicon oxynitride; and the first electrode 21 may be made of copper. For example, the inorganic insulating layer and the buffer layer may be made of the same material. Specifically, for the specific materials of the inorganic insulating layer 3 and the buffer layer, the aforementioned buffer layer thickness range, the buffer layer stress range, and the first electrode 21 thickness range can effectively reduce substrate warpage.

[0089] For example, the base substrate 1 is a glass substrate that does not contain Na or Ca. For example, the base substrate 1 is an SDL substrate. This prevents the abnormal growth caused by the precipitation of Na / Ca ions in the glass itself, which could lead to corrosion of the conductive metal layer and blistering, which could seriously affect the reliability of the MLED light-emitting substrate.

[0090] Figure 6 is a schematic plan view of an electrical connection structure of a light-emitting substrate according to one embodiment of the present disclosure; Figure 7 is a schematic cross-sectional view taken along line A1-A2 in Figure 6 . The schematics shown in Figures 6-7 are combined with Figures 5B-5E to illustrate the positional relationship between the electrical connection structures, but the actual morphological features of the layered structures are based on Figures 5B-5E .

[0091] Figure 5F is a scanning electron microscope cross-sectional view of another electrical connection structure of a light-emitting substrate provided in one embodiment of the present disclosure, and Figure 8 is another schematic cross-sectional view along line A1-A2 in Figure 6 . Specifically, Figure 5F shows an actual structural diagram of the electrical connection structure, and Figure 8 is a schematic diagram of the electrical connection structure. Referring to Figures 5F and 8 , for example, the electrical connection structure 2 further includes a second electrode 22, which is stacked vertically with the first electrode 21 and the inorganic insulating layer 3, and is located on a side of the inorganic insulating layer 3 away from the first electrode 21. The second electrode 22 is electrically connected to the first electrode 21 via a first via V1 that penetrates the inorganic insulating layer 3.

[0092] For example, the inorganic insulating layer 3 includes: a first sub-inorganic insulating layer 31 and a second sub-inorganic insulating layer 32 stacked on each other in a vertical direction, the second sub-inorganic insulating layer 32 is located on the side of the first sub-inorganic insulating layer 31 away from the base substrate 1, and the first via V1 passes through the first sub-inorganic insulating layer 31 and the second sub-inorganic insulating layer 32.

[0093] For example, the thickness of the first inorganic sub-insulating layer 31 is greater than 4000 angstroms, so that the warping level of the base substrate and the electrical connection structure meets the requirements and the reliability of subsequent die bonding is guaranteed.

[0094] 7 , the inorganic insulating layer 3 includes a first sub-portion 3a and a second sub-portion 3b arranged in a vertical direction D1, the second sub-portion 3b being located on a side of the first sub-portion 3a away from the base substrate 1; the first sub-portion 3a has a first slope S1 surrounding the first via V1, and the second sub-portion 3b has a second slope S2 surrounding the first via V1; the first electrode 21 has a covering portion not exposed by the first via V1, the covering portion of the first electrode 21 has an upper surface TS1 away from the base substrate 1, a first angle θ1 is formed between the surface where the first slope S1 is located and the upper surface TS1 of the covering portion, a second angle θ2 is formed between the surface where the second slope S2 is located and the upper surface TS1 of the covering portion (represented in FIG7 by the angle between a dotted line parallel to the upper surface TS1 of the covering portion and the surface where the second slope S2 is located), and the second angle θ2 is greater than the first angle θ1, the first angle θ1 being the slope angle of the first slope S1, and the second angle θ2 being the slope angle of the second slope S2. As a result, the side wall of the inorganic insulating layer 3 surrounding the first via hole V1 (i.e., the hole wall of the first via hole V1) presents a double-step morphology, avoiding the slope angle of the entire side wall of the inorganic insulating layer 3 surrounding the first via hole V1 being too large, thereby facilitating the adhesion of the second electrode 22 to the first slope surface S1 and the second slope surface S2, and avoiding the second electrode 22 from breaking at the hole wall of the first via hole V1, which causes poor electrical performance and poor reliability. In addition, the double-step morphology can be produced by two dry etching processes, the first dry etching process using an atmosphere with a high oxygen concentration, and the second dry etching process using an atmosphere with a low oxygen concentration. Therefore, not only can the double-step morphology structure solve the above-mentioned problem of the second electrode 22 being easily broken at the position of the side wall of the inorganic insulating layer 3 surrounding the first via hole V1, but the two dry etching processes can also prevent the first electrode 21 from being over-oxidized under a high oxygen concentration after being exposed to the first via hole V0, thereby solving the problem of poor bubbling between the second electrode 22 caused by this.

[0095] The second electrode 22 is continuous at the double step including the first slope S1 and the second slope S2 , and covers the entire first via hole V0 . The second electrode 22 has no breakage or cracks, and no other impurities are mixed in the cracks due to the cracks.

[0096] For example, referring to FIG7 , the thickness of the second sub-portion 3b in the vertical direction D1 is less than the thickness of the first sub-portion 3a in the vertical direction D1. Thus, the second sub-portion 3b corresponding to the second slope surface S2 having a larger slope angle has a smaller thickness, which facilitates the adhesion of the second electrode 22 to the first slope surface S1 and the second slope surface S2. Otherwise, even if the aforementioned bubbling problem is solved, the adhesion between the second electrode 22 and the entire sidewall (the entire slope surface) of the inorganic insulating layer 3 surrounding the first via V1 is not ideal, further effectively preventing the second electrode 22 from breaking at the hole wall of the first via V1, which could lead to poor electrical performance and reliability.

[0097] For example, referring to Figure 7, the thickness of the second sub-portion 3b in the vertical direction D1 accounts for a ratio of less than or equal to 1 / 3 of the thickness of the inorganic insulating layer 3 in the vertical direction D1. After experimental verification, it has been found that meeting this condition can better prevent the second electrode 22 from breaking at the wall of the first via hole V1, thereby obtaining higher electrical reliability.

[0098] For example, a buffer layer buffer is provided on the main surface of the substrate 1 , and the first electrode 21 , the second electrode 22 , the inorganic insulating layer 3 , etc. are all provided on the buffer layer buffer.

[0099] For example, the first angle θ1 ranges from 15° to 30°, and the second angle θ2 ranges from 50° to 80°. The inventors of this application have discovered that the magnitude of the first angle θ1 and the magnitude of the second angle θ2 have a significant impact on preventing the second electrode from breaking. After experimentation, they have found that within the above-mentioned angle range, a relatively stable and good effect can be achieved. The second angle θ2 cannot be too large, thereby facilitating the adhesion of the second electrode to the second slope surface forming the second angle and preventing the second electrode from breaking. In addition, the magnitude of the first angle θ1 should not be too small or too large. If the first angle θ1 is too small, for example, less than 15°, it will make it difficult to form the first slope surface forming the first angle. If the first angle is too large, for example, greater than 30°, when the above-mentioned two-step dry etching process is used to form the first slope surface and the second slope surface, the second angle will be even larger. This is not conducive to the adhesion of the second electrode to the first slope surface, nor is it conducive to the adhesion of the second electrode to the second slope surface, and the second electrode is prone to breaking at the first and second slope surfaces.

[0100] For example, referring to Figure 7, the portion of the second electrode 22 located in the first via V1 has a bottom surface and a side surface. The bottom surface of the second electrode 22 is in contact with the first electrode 21, with no bubbles, gaps, or impurities between the bottom surface and the first electrode 21. The side surface of the second electrode 22 is in contact with the first slope S1 and the second slope S2, with no bubbles, gaps, or impurities between the bottom surface and the first slope S1 and the second slope S2. "Impurities" here refer to substances formed during the manufacturing process other than the target layers of the first electrode 21, the second electrode 22, and the inorganic insulating layer 3.

[0101] As shown in Figure 7, the portion of the second electrode 22 covering the first slope surface S1 and the second slope surface S2 away from the surface of the substrate 1 has a slope, and the angle between the slope and the plane where the main surface of the substrate 1 is located is the slope angle of the second electrode 22. For example, the slope angle of the second electrode 22 is less than 90°, for example, 30° to 60°.

[0102] For example, the material of the inorganic insulating layer 3 includes at least one of silicon nitride, silicon oxide, and silicon oxynitride; the material of the first electrode 21 and the second electrode 22 is a metal material, including a metal or alloy, such as copper. Copper is a preferred material for the conductive connection structure currently used in display substrates due to its good conductivity, ease of acquisition, and ease of fabrication. Alternatively, the material of the first electrode 21 and the second electrode 22 can be manganese, chromium, copper alloy, manganese alloy, etc. However, the materials of the first and second electrodes are not limited to the types listed above, and the present disclosed embodiments do not impose such restrictions.

[0103] Fig. 8 is another schematic cross-sectional view along line A1-A2 in Fig. 6. The embodiment shown in Fig. 8 differs from the embodiment shown in Fig. 7 in the following ways.

[0104] For example, referring to FIG8 , the inorganic insulating layer 3 includes a first sub-inorganic insulating layer 31 and a second sub-inorganic insulating layer 32 stacked one above the other in a vertical direction D1. The second sub-inorganic insulating layer 32 is located on a side of the first sub-inorganic insulating layer 31 away from the base substrate 1 . A first via V1 extends through the first and second sub-inorganic insulating layers 31 and 32 . The second sub-inorganic insulating layer 32 includes an upper portion 32 t and a lower portion 32 b . The lower portion 32 t contacts the first sub-inorganic insulating layer 31 . The upper portion 32 t is located on a side of the lower portion 32 b away from the first sub-inorganic insulating layer 31 . The upper portion 32 t serves as a second sub-portion having a second slope S2 , while the lower portion 32 b and the first sub-inorganic insulating layer 31 together serve as a first sub-portion having a first slope S1 . The dashed line l in FIG8 schematically represents the boundary between the upper portion 32 t and the lower portion 32 b . In the structure shown in Figure 8, the inorganic insulating layer 3 is composed of two sub-inorganic insulating layers. The side wall of the inorganic insulating layer 3 surrounding the first via hole V1 (that is, the hole wall of the first via hole V1) also presents a double-step morphology. Similar to the technical effect shown in Figure 7, the embodiment shown in Figure 8 can also prevent the slope angle of the entire side wall of the inorganic insulating layer 3 surrounding the first via hole V1 from being too large, thereby facilitating the adhesion of the second electrode 22 to the first slope surface S1 and the second slope surface S2, and avoiding the electrical and reliability problems caused by the breakage of the second electrode 22 at the hole wall of the first via hole V1. In addition, the double-step morphology can be produced by two dry etching processes. The first dry etching process uses an atmosphere with a high oxygen concentration, and the second dry etching process uses an atmosphere with a low oxygen concentration to solve the problem of poor bubbling between the second electrodes 22 caused by this.

[0105] For example, the first and second inorganic insulating layers 31 and 32 may be made of the same material. For example, the first and second inorganic insulating layers 31 and 32 may be made of at least one of silicon nitride, silicon oxide, and silicon oxynitride.

[0106] For example, referring to Figure 8, the light-emitting substrate 10 also includes a first organic insulating layer 4, which is located between the first sub-inorganic insulating layer 31 and the second sub-inorganic insulating layer 32, and includes a second via hole V2. The orthographic projection of the first via hole V1 on the base substrate 1 is within the range of the orthographic projection of the second via hole V2 on the base substrate 1. The first organic insulating layer 4 has an upper surface 41 away from the base substrate 1 and a side surface 42 facing the first via hole V1. The second sub-inorganic insulating layer 32 covers the upper surface 41 and the side surface 42 of the first organic insulating layer 4; the portion of the first sub-inorganic insulating layer 31 close to the first via hole V1 includes a first edge portion 31e exposed by the second via hole V2, and the portion of the second sub-inorganic insulating layer 32 covering the side surface 42 of the first organic insulating layer 4 is a second edge portion 32e. The second edge portion 32e also covers the first edge portion 31e and contacts the first edge portion 31e. The whole formed by the first edge portion 31e and the second edge portion 32e includes a first slope surface S1 and a second slope surface S2. Typically, after forming the first inorganic insulating layer 31, the first organic insulating layer 4 is formed, and then the second inorganic insulating layer 32 is formed. The second inorganic insulating layer 32 covers the first organic insulating layer 4, and the second edge portion 32e of the second inorganic insulating layer 32 wraps around the edge of the first organic insulating layer 4, thereby protecting the first organic insulating layer 4 from being etched during the subsequent dry etching process of the inorganic insulating layer 3 composed of the first inorganic insulating layer 31 and the second inorganic insulating layer 32. The second electrode 22 is continuous at the double step including the first slope S1 and the second slope S2. The second electrode 22 covers the entire first via hole V0, and the second electrode 22 has no breaks or cracks, and no impurities are contained in the cracks due to the cracks.

[0107] It should be noted that FIG8 is a cross-sectional view. In fact, the first edge portion 31e is in a ring shape surrounding the first via hole V1, for example, a closed ring shape surrounding the entire first via hole V1.

[0108] For example, referring to FIG8 , the first slope surface S1 includes the intersection of the first edge portion 31e and the second edge portion 32e. The slope angle of the first slope surface S1 at this intersection is the same as the slope angle of the entire first slope surface S1. That is, the entire first slope surface S1 has a smooth transition without abrupt changes at the intersection, which facilitates the adhesion and continuity of the second electrode 22 on the first slope surface S1.

[0109] Other features shown in FIG8 , such as the range of the first angle θ1, the range of the second angle θ2, the range of the slope angle of the second electrode 22 , etc., and the corresponding technical effects are the same as those of the embodiment shown in FIG7 , and reference may be made to the previous description, which will not be repeated here.

[0110] FIG9A is a schematic diagram of the electrical connection structure located in the light-emitting area and non-light-emitting area of ​​a display substrate provided in an embodiment of the present disclosure. For example, a portion of the electrical connection structure is located in the light-emitting area, and a portion of the electrical connection structure is located in the fan-out area of ​​the non-light-emitting area. The position of the fan-out area is shown in FIG5A. The fan-out area can be bent to the non-light-emitting side of the light-emitting substrate, which is opposite to the light-emitting side. For any display substrate provided in the embodiments of the present application, the electrical connection structure shown in FIG9A can be the electrical connection structure shown in FIG7 or FIG8.

[0111] Referring to FIG9A , for example, each light-emitting device that performs a light-emitting function includes a first electrode pin L1 and a second electrode pin L2. FIG9A , which is represented by two dotted-line boxes, does not illustrate the specific structure of the light-emitting device. For example, the light-emitting device can be transferred to the positions of the first electrode pin L1 and the second electrode pin L2, such as by flip-chip mounting. Referring to FIG5A and FIG9A , the light-emitting substrate 10 also includes a circuit board FPC located in the non-light-emitting region NLR. For example, the circuit board FPC is a flexible circuit board, but is not limited to a flexible circuit board.

[0112] For example, the light-emitting substrate includes a plurality of electrical connection structures, each of which has the above-mentioned first electrode 21 and second electrode 22, for example, having the structure shown in Figure 7 or Figure 8. Four electrical connection structures are introduced below, namely the first electrical connection structure 01, the second electrical connection structure 02, the third electrical connection structure 03 and the fourth electrical connection structure 04. The positions and specific connection structures of these electrical connection structures are different to achieve different functions. These four electrical connection structures play an important role in the light-emitting substrate provided by the present invention. The problem of the above-mentioned second electrode being easily broken at the first slope surface and the second slope surface and the bubbling problem at these positions have a fatal impact on whether the light-emitting substrate can emit light and display normally. Therefore, solving the above-mentioned problems at these positions has a direct and significant impact on improving the light-emitting quality and display quality of the light-emitting substrate. Of course, the type and position of the electrical connection structure, the structure connected and the function achieved are not limited to these four types, as long as it has the structure shown in Figure 7 or Figure 8.

[0113] For example, the electrical connection structure 2 includes a first electrical connection structure 01 having the first and second electrodes of the aforementioned electrical connection structure. To distinguish it from other electrical connection structures, in FIG9A , the first electrode of the first electrical connection structure 01 is labeled 211, and the second electrode of the first electrical connection structure 01 is labeled 221. The first and second electrodes 211 and 221 of the first electrical connection structure 01 are configured to provide an electrical signal to the light-emitting device for driving the light-emitting device to emit light.

[0114] Figure 9A shows the four light-emitting devices LED1, LED2, LED3, and LED4 of a first light-emitting unit PU1. The connection method of the first electrical connection structure 01 is the same for each light-emitting device. Light-emitting device LED1 is used as an example. The first electrode 211 of the first electrical connection structure 01 is electrically connected to the printed circuit board (FPC) to receive a power signal from the FPC. The second electrode 221 of the first electrical connection structure 01 is electrically connected to the first electrode pin L1 of the light-emitting device LED1 to provide a power signal to the light-emitting device LED1. The power signal is an electrical signal used to drive the light-emitting device LED1 to emit light. Light-emitting device LED1 emits light in response to the power signal from the first electrode pin L1 and the light-emitting drive signal from the second electrode pin L2.

[0115] For example, the light-emitting substrate 10 includes a first conductive layer and a second conductive layer, the first conductive layer includes a first electrode of each electrical connection structure, and the second conductive layer includes a second electrode of each electrical connection structure; the light-emitting substrate 10 also includes a driving circuit IC, and the driving circuit IC is at least partially located in the light-emitting area LR; the light-emitting substrate includes a light-emitting array, the light-emitting array includes a plurality of light-emitting units arranged in an array, each light-emitting unit includes a plurality of light-emitting devices, and a driving circuit IC is provided corresponding to each light-emitting unit, and the driving circuit IC is configured to provide a light-emitting control signal to the light-emitting device of the corresponding light-emitting unit to control the light-emitting state of the light-emitting device of the light-emitting unit.

[0116] The second conductive layer also includes a connecting electrode CE, a first end of the connecting electrode CE is electrically connected to the driving circuit IC, and a second end of the connecting electrode CE is electrically connected to the second electrode pin L2 of the light-emitting device to provide a light-emitting drive signal to the light-emitting device, and the light-emitting device emits light under the drive of the power signal and the light-emitting drive signal. For example, the light-emitting substrate can be a backlight panel, which can be used as a backlight source of a display panel. Alternatively, the light-emitting substrate can also be a display substrate, and the light-emitting device emits light to perform a display function. For example, the light-emitting drive signal is used to control the light-emitting brightness of the light-emitting device. For example, in the display substrate, each light-emitting unit P is a pixel, each sub-light-emitting unit P1~P4 is a sub-pixel, each sub-pixel includes a light-emitting device, and the light-emitting drive signal is used to control the display grayscale of the sub-pixel where the light-emitting device is located.

[0117] For example, referring to FIG9A , the plurality of electrical connection structures further include a second electrical connection structure 02, which includes the first electrode and the second electrode of the aforementioned electrical connection structure. To distinguish the plurality of electrical connection structures from the other electrical connection structures, the first electrode of the second electrical connection structure 02 is labeled 212 in FIG9A , and the second electrode of the second electrical connection structure 021 is labeled 222. The plurality of light-emitting units of the light-emitting array include a first light-emitting unit PU1 and a second light-emitting unit PU2 located in the same column. FIG9A only shows the first light-emitting unit PU1 as an example. The position of the second light-emitting unit PU2 relative to the first light-emitting unit PU1 can be referred to FIG5A . For example, each column extends from the FPC circuit board to the display area, such as from the fan-out area Fanout to the display area.

[0118] For example, referring to FIG9A , the first electrode 212 of the second electrical connection structure 02 is electrically connected to the printed circuit board (FPC) to receive a light-emission control signal from the FPC. The second electrode 222 of the second electrical connection structure 02 is electrically connected to the input terminal of the driver circuit IC corresponding to the first light-emitting unit PU1. The light-emission control signal can be a light-emission drive signal for controlling the light-emitting state of the light-emitting device, and the light-emission drive signal is used to control the light-emitting brightness of the light-emitting device. Alternatively, when the light-emitting unit is a display pixel, the light-emission control signal can be a data signal for controlling the grayscale of the light-emitting brightness of the light-emitting device. Alternatively, the light-emission control signal can be a timing control signal for controlling the light-emitting device to emit light.

[0119] For example, referring to FIG9A , the plurality of electrical connection structures further includes a third electrical connection structure 03, which includes the first and second electrodes of the aforementioned electrical connection structure. To distinguish it from the other electrical connection structures, FIG9A shows the first electrode of the third electrical connection structure 03 as 213, and the second electrode of the third electrical connection structure 03 as 223. The second electrode 223 of the third electrical connection structure 03 is electrically connected to the output terminal of the driver circuit IC corresponding to the first light-emitting unit PU1, and the first electrode 213 of the third electrical connection structure 03 is electrically connected to the input terminal of the driver circuit IC corresponding to the second light-emitting unit PU2 to provide a light-emission control signal to the second light-emitting unit PU2.

[0120] For example, referring to FIG9A , the plurality of electrical connection structures 2 further include a fourth electrical connection structure 04, which includes the first and second electrodes of the aforementioned electrical connection structure. To distinguish it from the other electrical connection structures, FIG9A shows the first electrode 214 and the second electrode 224 of the fourth electrical connection structure 04. The first electrode 214 of the fourth electrical connection structure 04 is grounded, and the second electrode 224 of the fourth electrical connection structure 04 is electrically connected to the ground signal input terminal of the driver circuit IC.

[0121] For example, the light-emitting device is a sub-millimeter light-emitting diode (Mini LED) or a micro light-emitting diode (Micro LED). For example, a sub-millimeter light-emitting diode (Mini LED) has a size of approximately 100-300 μm. A micro light-emitting diode (Micro LED) has a size of less than 100 μm.

[0122] The light-emitting substrate 10 includes a light-emitting array, which includes a plurality of light-emitting units arranged in an array. Each light-emitting unit includes a plurality of first electrical connection structures 01 and a plurality of light-emitting devices. In one light-emitting unit, the driving circuit IC and the connecting electrode CE are located in the middle, and the light-emitting devices are located on both sides.

[0123] Figure 9B is a schematic diagram of a display device provided by at least one embodiment of the present disclosure. Referring to Figure 9B , the display device 100 includes any of the light-emitting substrates 10 provided by the embodiments of the present disclosure. For example, the light-emitting substrate 10 is a display substrate, the light-emitting region LR is a display region and includes a pixel array. The pixel array includes a plurality of sub-pixels arranged in an array, and each sub-pixel used for display includes the aforementioned light-emitting device. The first electrode 21 and the second electrode 22 of the first electrical connection structure 01 provide an electrical signal to the light-emitting device to drive the light-emitting device to emit light, which is a display drive signal, thereby driving the light-emitting device to display an image.

[0124] Alternatively, in a display device requiring a backlight, the light-emitting substrate 10 can serve as the backlight of the display device and be configured to provide light for display to the display substrate. For example, if the display device 100 is a liquid crystal display device, the light-emitting substrate 10 can serve as the backlight of the liquid crystal display device.

[0125] For example, the display device 100 includes a light-emitting array comprising a plurality of light-emitting devices 10 arranged in an array. For example, the display device can be any product or component with a display function, such as a monitor, display panel, television, electronic paper, mobile phone, tablet computer, laptop computer, digital photo frame, or navigation system. Of course, the display device is not limited to the types listed above.

[0126] For example, the warping level of the substrate 1 using the above design is less than 0.2 mm, for example, less than 0.1 mm, which can effectively reduce the warping level, facilitate the adhesion of the various film layers of the electrical connection structure 2 on the substrate 1, and reduce the warping of the electrical connection structure 2, thereby ensuring the reliability of the subsequent die-bonding operation of the light-emitting device and ensuring the stable operation of the light-emitting device.

[0127] The warpage level refers to the height difference between the highest point of the main surface of the base substrate and the lowest point of the base substrate in a direction perpendicular to the main surface of the base substrate.

[0128] At least one embodiment of the present disclosure provides a method for manufacturing a light-emitting substrate 10, which includes: providing a base substrate 1, wherein the base substrate 1 has a main surface and includes a light-emitting area LR and a non-light-emitting area NLRLR that at least partially surrounds the light-emitting area LR; arranging a light-emitting device on the main surface of the base substrate 1, wherein the light-emitting device is located in the light-emitting area LR; and forming an electrical connection structure 2 on the main surface of the base substrate 1, including: forming a first electrode 21, wherein the first electrode 21 is located on the main surface of the base substrate 1; forming an inorganic insulating layer 3, wherein the inorganic insulating layer 3 and the first electrode 21 are stacked in a vertical direction perpendicular to the main surface of the base substrate 1, and are located on a side of the first electrode 21 away from the main surface of the base substrate 1, wherein the first electrode 21 has an upper surface away from the base substrate 1, the inorganic insulating layer 3 covers the upper surface of the first electrode 21, and the inorganic insulating layer 3 is directly and tightly fitted to the upper surface of the first electrode 21.

[0129] Specifically, the above structure can be formed layer by layer using conventional processes. For specific structural features, reference can be made to the description in the previous embodiments, which will not be repeated here.

[0130] For example, in the method for manufacturing the light-emitting substrate 10 provided in the embodiment of the present disclosure, a chemical vapor deposition method is used to form the inorganic insulating layer 3. Through experimental exploration and comparison, it is found that the use of a chemical vapor deposition (CVD) method to form the inorganic insulating layer 3 can form a structure as shown in FIG5B , ensuring that the lower surface of the second electrode 22 is in contact with the first electrode 21 and that there are no bubbles, gaps, or impurities between the second electrode 22 and the first electrode 21, and that the inorganic insulating layer 3 is tightly attached to the side surface 21B of the first electrode 21 and that there are no bubbles, gaps, or impurities between the two. Furthermore, the angle between the surface of the side portion 302 of the inorganic insulating layer 3 and the main surface of the base substrate 1 is small. This angle is within an appropriate range, which can prevent the inorganic insulating layer 3 from breaking and ensure that the inorganic insulating layer 3 has good wrapping properties for the first electrode 21. FIG1 is a structure formed by an inorganic insulating layer formed by physical vapor deposition (PVD). In FIG1 , first, there is a gap between the metal electrode 21a and the inorganic layer 3a in the conductive structure. Second, after testing and comparison, the angle between the surface of the side of the inorganic layer in FIG1 and the main surface of the base substrate is also large, which easily leads to the fracture of the inorganic layer. Third, in FIG1 , at the junction corresponding to FIG5B , the upper and side portions of the inorganic layer have cracks, and the wrapping effect on the metal electrode 21a is not as good as the continuous junction in FIG5B . It can be seen that compared with the inorganic insulating layer 3 formed by chemical vapor deposition (CVD), the effect achieved by forming the inorganic insulating layer by physical vapor deposition (PVD) is poor.

[0131] For example, the buffer layer is also formed using chemical vapor deposition (CVD), which can achieve good particle control, resulting in a film with strong adhesion, low warpage, and greater stability and durability.

[0132] Furthermore, in Mini LED or Micro LED light-emitting substrates, the buffer layer or inorganic insulating layer 3 is formed using a PVD process. This makes particle control difficult during the deposition process, especially when the buffer layer or inorganic insulating layer 3 is 3600 angstroms thick or thicker. This can easily lead to particle control exceeding requirements for the first electrode 21, resulting in poor film quality. CVD, on the other hand, is easier to adjust film quality than PVD, allowing for greater process adjustment margins in areas such as particle control, stress adjustment, adhesion optimization, and acid wash resistance. Furthermore, CVD is less expensive than PVD. For example, when only the first electrode 21 is formed without the second electrode 22 and the thickness of the first electrode 21 is 1.8 μm, the CVD process is approximately 12% less expensive than the PVD process. When only the first electrode 21 is formed without the second electrode 22 and the thickness of the first electrode 21 is 2.7 μm, the CVD process is even less expensive.

[0133] The above description is merely an exemplary embodiment of the present disclosure and is not intended to limit the scope of protection of the present disclosure. The scope of protection of the present disclosure is determined by the scope defined in the claims.

Claims

1. A light-emitting substrate, comprising: a substrate having a main surface, wherein the light-emitting substrate includes a light-emitting region and a non-light-emitting region at least partially surrounding the light-emitting region; a light-emitting device disposed on the main surface of the substrate and located in the light-emitting region; and an electrical connection structure, wherein the electrical connection structure includes: a first electrode located on the main surface of the substrate; an inorganic insulating layer stacked with the first electrode in a vertical direction perpendicular to the main surface of the substrate and located on a side of the first electrode away from the main surface of the substrate, wherein the first electrode has an upper surface away from the substrate, the inorganic insulating layer covers the upper surface of the first electrode, and there is a first gap between the inorganic insulating layer and the upper surface of the first electrode, and the width of the first gap is less than 0.2 μm.

2. The light-emitting substrate according to claim 1, wherein, the width of the first gap is less than 0.1 μm.

3. The light-emitting substrate according to claim 2, wherein, the width of the first gap is less than 0.05 μm.

4. The light-emitting substrate according to claim 1, wherein, the first electrode further has a side surface intersecting with the upper surface, the inorganic insulating layer covers the side surface of the first electrode, and the inorganic insulating layer also covers the side surface of the first electrode, and there is a second gap between the inorganic insulating layer and the side surface of the first electrode, and the width of the second gap is less than 0.2 μm.

5. The light-emitting substrate according to claim 4, wherein, the width of the second gap is less than 0.1 μm.

6. The light-emitting substrate according to claim 5, wherein, the width of the second gap is less than 0.05 μm.

7. The light-emitting substrate according to any one of claims 1-6, wherein, the inorganic insulating layer includes a top portion and a side portion, the top portion of the inorganic insulating layer covers the upper surface, the side portion of the inorganic insulating layer is connected to the top portion of the inorganic insulating layer and covers the side surface of the first electrode, the top portion of the inorganic insulating layer includes a main body portion and a protruding portion, the main body portion covers the upper surface of the first electrode, and the protruding portion extends from the main body portion in a horizontal direction parallel to the main surface of the substrate and protrudes beyond the main body portion and the side surface.

8. The light-emitting substrate according to claim 7, wherein, the thickness of the inorganic insulating layer is within a preset range, and as the thickness of the inorganic insulating layer increases, the length of the protruding portion in the horizontal direction becomes smaller.

9. The light-emitting substrate according to claim 8, wherein, the preset range includes at least 1200 Å to 3500 Å.

10. The light-emitting substrate according to any one of claims 1-9, wherein, the inorganic insulating layer includes a top portion and a side portion, the top portion of the inorganic insulating layer covers the upper surface, the side portion of the inorganic insulating layer is connected to the top portion of the inorganic insulating layer and covers the side surface of the first electrode; The inorganic insulating layer has a junction at the intersection of the top and the side, the junction corresponding to the edge of the first electrode remote from the substrate, the top and the side being continuously connected in the junction, and the junction being dense and free of cracks.

11. The light-emitting substrate according to any one of claims 1-10, wherein, the angle between the surface of the side and the main surface of the substrate is 50° to 60°, and the thickness of the first electrode is 2.7 μm; or, the angle between the surface of the side and the main surface of the substrate is 55° to 65°, and the thickness of the first electrode is 3.6 μm.

12. The light-emitting substrate according to any one of claims 1-11, wherein, the electrical connection structure further includes: a buffer layer, the buffer layer being stacked with the first electrode in the vertical direction; the thickness range of the buffer layer is 2000 Å to 2800 Å, and the stress range of the buffer layer is -360 Mpa to -440 Mpa; or, the thickness range of the buffer layer is 3600 Å to 4500 Å, and the stress range of the buffer layer is -360 Mpa to -440 Mpa; or, the thickness range of the buffer layer is 4600 Å to 5400 Å, and the stress range of the buffer layer is -360 Mpa to -440 Mp; or, the thickness range of the buffer layer is 5800 Å to 6200 Å, and the stress range of the buffer layer is less than -800 Mpa.

13. The light-emitting substrate according to claim 12, wherein, the thickness of the first electrode is 1.8 μm to 3.6 μm.

14. The light-emitting substrate according to claim 12 or 13, wherein, the inorganic insulating layer includes an edge portion, the edge portion being stacked and in contact with the buffer layer in the vertical direction.

15. The light-emitting substrate according to any one of claims 12-14, wherein, the material of the inorganic insulating layer includes at least one of silicon nitride, silicon oxide or silicon oxynitride; the material of the buffer layer includes at least one of silicon nitride, silicon oxide or silicon oxynitride; the material of the first electrode is copper.

16. The light-emitting substrate according to any one of claims 12-15, wherein, the substrate is a glass substrate, and the glass substrate does not include Na and Ca components.

17. The light-emitting substrate according to any one of claims 1-16, wherein, the electrical connection structure further includes: a second electrode, stacked with the first electrode and the inorganic insulating layer in the vertical direction, located on the side of the inorganic insulating layer remote from the first electrode, and electrically connected to the first electrode through a first via hole penetrating the inorganic insulating layer.

18. The light-emitting substrate according to claim 17, wherein, The inorganic insulating layer includes a first sub-inorganic insulating layer and a second sub-inorganic insulating layer stacked on top of each other in the vertical direction. The second sub-inorganic insulating layer is located on the side of the first sub-inorganic insulating layer away from the substrate. The first via penetrates through the first sub-inorganic insulating layer and the second sub-inorganic insulating layer.

19. The light-emitting substrate according to claim 18, wherein, the thickness of the first sub-inorganic insulating layer is greater than 4000 angstroms.

20. The light-emitting substrate according to claim 18 or 19, wherein, the electrical connection structure includes a first electrical connection structure having the first electrode and the second electrode. The first electrode and the second electrode of the first electrical connection structure are configured to provide an electrical signal for driving the light-emitting device to emit light to the light-emitting device.

21. The light-emitting substrate according to claim 20, wherein, the light-emitting device includes a first electrode pin and a second electrode pin; the light-emitting substrate further includes a circuit board located in the non-light-emitting area. The first electrode of the first electrical connection structure is electrically connected to the circuit board to receive a power signal from the circuit board. The second electrode of the first electrical connection structure is electrically connected to the first electrode pin of the light-emitting device to provide the power signal to the light-emitting device, and the power signal is the electrical signal for driving the light-emitting device to emit light; the light-emitting substrate includes a first conductive layer and a second conductive layer. The first conductive layer includes the first electrode, and the second conductive layer includes the second electrode; the light-emitting substrate further includes a driving circuit, and at least a part of the driving circuit is located in the light-emitting area; the second conductive layer further includes a connection electrode. The first end of the connection electrode is electrically connected to the driving circuit, and the second end of the connection electrode is electrically connected to the second electrode pin of the light-emitting device to provide a light-emitting driving signal to the light-emitting device. The light-emitting device emits light under the drive of the power signal and the light-emitting driving signal.

22. The light-emitting substrate according to any one of claims 18-21, wherein, the inorganic insulating layer includes a first sub-part and a second sub-part arranged in the vertical direction. The second sub-part is located on the side of the first sub-part away from the substrate; the first sub-part has a first slope surface surrounding the first via, and the second sub-part has a second slope surface surrounding the first via; the first electrode has a covered portion that is not exposed by the first via. The covered portion of the first electrode has an upper surface away from the substrate. There is a first included angle between the plane where the first slope surface is located and the upper surface of the covered portion, and there is a second included angle between the plane where the second slope surface is located and the upper surface of the covered portion. The second included angle is greater than the first included angle; the second sub-inorganic insulating layer includes an upper part and a lower part. The lower part is in contact with the first sub-inorganic insulating layer, and the upper part is located on the side of the lower part away from the first sub-inorganic insulating layer. The upper part serves as the second sub-part, and the whole formed by the lower part and the first sub-inorganic insulating layer serves as the first sub-part.

23. The light-emitting substrate according to any one of claims 1-22, wherein, the warpage level of the substrate is < 0.1 mm.

24. The light-emitting substrate according to any one of claims 1-23, wherein, the light-emitting substrate includes a plurality of the electrical connection structures, and the plurality of the electrical connection structures further includes a second electrical connection structure having a first electrode and a second electrode of the electrical connection structure; the light-emitting substrate further includes a driving circuit, at least a part of the driving circuit is located in the light-emitting area, the light-emitting substrate includes a light-emitting array, and the light-emitting array includes a plurality of light-emitting units arranged in an array, each of the light-emitting units includes a plurality of the light-emitting devices, and a driving circuit is provided corresponding to each light-emitting unit to control the light-emitting condition of the light-emitting devices of the light-emitting unit; the plurality of light-emitting units of the light-emitting array include a first light-emitting unit and a second light-emitting unit located in the same column; the first electrode of the second electrical connection structure is electrically connected to the circuit board to receive a light-emitting control signal from the circuit board, the second electrode of the second electrical connection structure is electrically connected to the input end of the driving circuit corresponding to the first light-emitting unit, and the light-emitting control signal includes a light-emitting driving signal for controlling the light-emitting state of the light-emitting device and / or a timing control signal for controlling the light-emitting of the light-emitting device; the plurality of electrical connection structures further includes a third electrical connection structure having a first electrode and a second electrode of the electrical connection structure; the second electrode of the third connection structure is electrically connected to the output end of the driving circuit corresponding to the first light-emitting unit, and the first electrode of the third electrical connection structure is electrically connected to the input end of the driving circuit corresponding to the second light-emitting unit to provide the light-emitting control signal to the second light-emitting unit.

25. The light-emitting substrate according to claim 24, wherein, the plurality of electrical connection structures further includes a fourth electrical connection structure having a first electrode and a second electrode of the electrical connection structure; the first electrode of the fourth electrical connection structure is grounded, and the second electrode of the fourth electrical connection structure is electrically connected to the ground signal input end of the driving circuit.

26. The light-emitting substrate according to any one of claims 1-25, wherein, the light-emitting device is a submillimeter light-emitting diode or a micro light-emitting diode.

27. A display device includes the light-emitting substrate according to any one of claims 1-26, wherein, the light-emitting substrate is a display substrate, the light-emitting area is a display area and includes sub-pixels, and the sub-pixels include the light-emitting devices; the electrical signals provided by the first electrode and the second electrode of the first electrical connection structure to the light-emitting devices for driving the light-emitting devices to emit light are display driving signals to drive the light-emitting devices to display an image; or, the light-emitting substrate serves as a backlight of the display device and is configured to provide light for display to the display substrate.

28. A manufacturing method of a light-emitting substrate, including: Provide a substrate, wherein the substrate has a main surface and includes a light-emitting region and a non-light-emitting region at least partially surrounding the light-emitting region; Dispose a light-emitting device on the main surface of the substrate, wherein the light-emitting device is located in the light-emitting region; and Form an electrical connection structure on the main surface of the substrate, including: Form a first electrode, wherein the first electrode is located on the main surface of the substrate; Form an inorganic insulating layer, wherein the inorganic insulating layer is stacked with the first electrode in a vertical direction perpendicular to the main surface of the substrate and is located on a side of the first electrode away from the main surface of the substrate, wherein The first electrode has an upper surface away from the substrate, the inorganic insulating layer covers the upper surface of the first electrode, and the inorganic insulating layer is directly and closely attached to the upper surface of the first electrode.

29. The method for manufacturing a light-emitting substrate according to claim 28, wherein, The inorganic insulating layer is formed by chemical vapor deposition.

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