Light-emitting diode panel

Abstract

A light-emitting diode panel; in a region corresponding to a trench, the light-emitting diode panel is provided with a second conductive layer covering a first conductive layer to increase the thickness of the first conductive layer in the region corresponding to a trench.

Description

LED panels

[0001] This application claims priority to Chinese patent application No. 202311626225.3 filed on November 29, 2023, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the field of display technology, and in particular to a light emitting diode panel. Background Art

[0003] With the popularity of augmented reality (AR) and virtual reality (VR) technologies, micro-display technology with high brightness and high pixel resolution (PPI) has become the best display solution. Micro-display technology based on silicon-based micro light-emitting diodes (Micro-LEDs) has become the most competitive display solution. Unlike traditional LED manufacturing processes, the manufacturing process of silicon-based micro light-emitting diodes is more complicated. It is necessary to combine the driver substrate and LED epitaxy together, and then pattern the LED epitaxy and connect it to the driver substrate. In the process of combining the LED epitaxy and the driver plate, bonding metal needs to be introduced. Both the LED epitaxy and the bonding metal are relatively thick. After etching and patterning, a large trench step difference will be formed between Micro-LED pixels. When the subsequent conductive film is redeposited, it will become thinner or even break at the trench step between Micro-LED pixels, affecting the performance of silicon-based micro light-emitting diodes. SUMMARY OF THE INVENTION

[0004] The embodiments of the present application provide a light emitting diode panel, which can improve the stability of light emitting diode devices.

[0005] An embodiment of the present application provides a light emitting diode panel, comprising:

[0006] A driving substrate, comprising a substrate and a first conductive bonding layer provided on the substrate;

[0007] a second conductive bonding layer, wherein the second conductive bonding layer is bonded to a surface of the first conductive bonding layer away from the substrate;

[0008] a light-emitting diode epitaxial layer, the light-emitting diode epitaxial layer comprising a plurality of light-emitting diodes, the light-emitting diodes being arranged on a side of the second conductive bonding layer away from the substrate, one end of the light-emitting diode being electrically connected to the second conductive bonding layer, a groove being provided between two adjacent light-emitting diodes, the groove penetrating the light-emitting diode epitaxial layer, the second conductive bonding layer, and the first conductive bonding layer;

[0009] a protective layer, the protective layer covering the light-emitting diode epitaxial layer and the trench, the protective layer being provided with an opening, the opening exposing the light-emitting diode;

[0010] a first conductive layer, the first conductive layer covering the protective layer and connected to the other end of the light-emitting diode through the opening, wherein a portion of the first conductive layer covers the region of the groove;

[0011] The second conductive layer is directly disposed on a side of the first conductive layer away from the substrate, and the second conductive layer at least covers a region of the groove. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] FIG1 is a schematic structural diagram of a light-emitting diode panel provided in an embodiment of the present application;

[0013] Figure 2 is an enlarged view of portion A in Figure 1;

[0014] FIG3 is an enlarged view of another structure of portion A in FIG1 ;

[0015] FIG4 is a structural diagram of step S1 of the method for preparing a light emitting diode panel provided in an embodiment of the present application;

[0016] FIG5 is a structural diagram of step S2 of the method for preparing a light emitting diode panel provided in an embodiment of the present application;

[0017] FIG6 is a structural diagram of step S3 of the method for preparing a light emitting diode panel provided in an embodiment of the present application.

[0018] FIG7 is a structural diagram of step S4 of the method for preparing a light emitting diode panel provided in an embodiment of the present application;

[0019] FIG8 is another structural diagram of a light emitting diode panel provided in an embodiment of the present application;

[0020] FIG9 is an enlarged view of portion A in FIG8 . Modes for Carrying Out the Invention

[0021] The following will clearly and completely describe the technical solutions in the embodiments of the present application in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application and are not used to limit the present application. In the present application, unless otherwise specified, the directional words used, such as "upper" and "lower", generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inside" and "outside" refer to the outline of the device; the terms "first", "second", "third", etc. are used only as labels and do not impose numerical requirements or establish an order.

[0022] The embodiments of the present application provide a light emitting diode panel, which is described in detail below. It should be noted that the order of description of the following embodiments does not limit the preferred order of the embodiments.

[0023] An embodiment of the present application provides a light emitting diode panel, comprising:

[0024] A driving substrate, comprising a substrate and a first conductive bonding layer provided on the substrate;

[0025] a second conductive bonding layer, wherein the second conductive bonding layer is bonded to a surface of the first conductive bonding layer away from the substrate;

[0026] a light-emitting diode epitaxial layer, the light-emitting diode epitaxial layer comprising a plurality of light-emitting diodes, the light-emitting diodes being arranged on a side of the second conductive bonding layer away from the substrate, one end of the light-emitting diode being electrically connected to the second conductive bonding layer, a groove being provided between two adjacent light-emitting diodes, the groove penetrating the light-emitting diode epitaxial layer, the second conductive bonding layer, and the first conductive bonding layer;

[0027] a protective layer, the protective layer covering the light-emitting diode epitaxial layer and the trench, the protective layer being provided with an opening, the opening exposing the light-emitting diode;

[0028] a first conductive layer, the first conductive layer covering the protective layer and connected to the other end of the light-emitting diode through the opening, wherein a portion of the first conductive layer covers the region of the groove;

[0029] The second conductive layer is directly disposed on a side of the first conductive layer away from the substrate, and the second conductive layer at least covers a region of the groove.

[0030] Optionally, in some embodiments of the present application, the first conductive layer includes a first portion and a second portion that are connected, the first portion is disposed in the region of the light-emitting diode, the second portion is disposed in the region of the groove, and the thickness of the first portion is greater than that of the second portion;

[0031] A sum of a thickness of the second portion and a thickness of the second conductive layer is greater than or equal to a thickness of the first portion.

[0032] Optionally, in some embodiments of the present application, the groove includes a first groove and a second groove that are connected, the first groove passes through the light-emitting diode epitaxial layer, and the second groove passes through the second conductive bonding layer and the first conductive bonding layer;

[0033] The width of the first groove is greater than the width of the second groove, the thickness of the first conductive layer located in the first groove is greater than the thickness of the first conductive layer located in the second groove, and the thickness of the second conductive layer located in the first groove is greater than the thickness of the second conductive layer located in the second groove;

[0034] The sum of the thickness of the portion of the first conductive layer located in the second groove and the thickness of the portion of the second conductive layer located in the second groove is greater than or equal to the thickness of the first portion.

[0035] Optionally, in some embodiments of the present application, the second conductive layer includes a connected covering portion and a filling portion, the covering portion covers the area of ​​the second part corresponding to the first groove, and the filling portion fills the recessed portion of the second part corresponding to the second groove.

[0036] Optionally, in some embodiments of the present application, the second conductive layer covers the surface of the second portion away from the substrate.

[0037] Optionally, in some embodiments of the present application, the light-emitting diode panel further includes a third conductive layer, the third conductive layer is arranged between the light-emitting diode and the second conductive bonding layer, and the second groove passes through the third conductive layer.

[0038] Optionally, in some embodiments of the present application, the groove width is less than 0.6 microns.

[0039] Optionally, in some embodiments of the present application, the material of the second conductive layer is selected from at least one of metals and metal oxides.

[0040] Optionally, in some embodiments of the present application, the second conductive layer is a single-film structure.

[0041] Optionally, in some embodiments of the present application, the second conductive layer is a multi-layer stacked structure.

[0042] Optionally, in some embodiments of the present application, the second conductive layer includes an electroplating seed layer and an electroplating metal layer disposed on the electroplating seed layer, and the electroplating seed layer covers the first conductive layer.

[0043] In the light-emitting diode panel of the embodiment of the present application, a second conductive layer is provided in the area corresponding to the groove to cover the first conductive layer to thicken the thickness of the first conductive layer corresponding to the groove area, thereby compensating for the risk of thinning, breaking or false connection of the first conductive layer in the groove, thereby improving the connection conductivity and conductive stability of the first conductive layer between the light-emitting diodes, and improving the performance and manufacturing yield of the light-emitting diode panel.

[0044] 1 and 2 , an embodiment of the present application provides a light-emitting diode panel 100 , which includes a driving substrate qd, a second conductive bonding layer 11 , a light-emitting diode epitaxial layer 12 , a protective layer 13 , a first conductive layer 14 and a second conductive layer 15 .

[0045] The driving substrate qd includes a substrate 16 and a first conductive bonding layer 17 disposed on the substrate 16. The second conductive bonding layer 11 is bonded to a surface of the first conductive bonding layer 17 away from the substrate 16.

[0046] The LED epitaxial layer 12 includes a plurality of LEDs (LEDs). The LEDs (LEDs) are disposed on a side of the second conductive bonding layer 11 away from the substrate 16. One end of the LED is electrically connected to the second conductive bonding layer 11. A groove g1 is provided between adjacent LEDs (LEDs), extending through the LED epitaxial layer 12, the second conductive bonding layer 11, and the first conductive bonding layer 17.

[0047] The protective layer 13 covers the light emitting diode epitaxial layer 12 and the groove g1. An opening 13a is provided on the protective layer 13, and the opening 13a exposes the light emitting diode LED.

[0048] First conductive layer 14 covers protective layer 13 and is connected to the other end of light-emitting diode (LED) through opening 13a. First conductive layer 14 partially covers the area of ​​groove g1. Second conductive layer 15 is directly disposed on a side of first conductive layer 14 facing away from substrate 16. Second conductive layer 15 covers at least the area of ​​groove g1.

[0049] In the light-emitting diode panel 100 of the embodiment of the present application, a second conductive layer 15 is provided in the area corresponding to the groove g1 to cover the first conductive layer 14 so as to thicken the thickness of the first conductive layer 14 in the area corresponding to the groove g1, thereby compensating for the risk of thinning, breaking or false connection of the first conductive layer 14 at the groove g1, thereby improving the connection and conductivity capability of the first conductive layer 14 between the light-emitting diodes LED, and improving the performance and manufacturing yield of the light-emitting diode panel 100.

[0050] Optionally, the groove width of the groove g1 is less than 0.6 micrometers, for example, it may be 0.59 micrometers, 0.55 micrometers, 0.5 micrometers, 0.4 micrometers, 0.3 micrometers, 0.2 micrometers or 0.1 micrometers.

[0051] Since the second conductive layer 15 is added, the conductive continuity and stability between the light emitting diodes (LEDs) are improved, so the width of the groove g1 can be reduced, thereby improving the resolution of the light emitting diode panel 100 .

[0052] It should be noted that the notch width of the groove g1 is referred to as the notch width k1 of the first groove g11 hereinafter.

[0053] Optionally, the driving substrate qd further includes a thin film transistor structure layer 18, which is disposed between the substrate 16 and the first conductive bonding layer 17. The first conductive bonding layer 17 is electrically connected to the thin film transistors in the thin film transistor structure layer 18.

[0054] Optionally, the first conductive layer 14 includes a first portion 141 and a second portion 142 connected to each other. The first portion 141 is disposed in the region of the light emitting diode LED. The second portion 142 is disposed in the region of the groove g1. The thickness of the first portion 141 is greater than that of the second portion 142.

[0055] In the trench g1 region, the sum of the thickness of the second portion 142 and the thickness of the second conductive layer 15 is greater than or equal to the thickness of the first portion 141 .

[0056] In this embodiment, the total thickness of the conductive stack (second portion 142 + second conductive layer 15) located in the groove g1 region is set to be greater than or equal to the thickness of the first portion 141, thereby reducing the risk of the conductive layer being broken or having a virtual connection at the groove and reducing the impedance of the entire first conductive layer 14.

[0057] It should be understood that the thickness of the second portion 142 is the average thickness of the second portion 142 , the thickness of the second conductive layer 15 is the average thickness of the second conductive layer 15 , and the thickness of the first portion 141 is the average thickness of the first portion 141 .

[0058] In some embodiments, the thickness of the second portion 142 is the minimum thickness of the second portion 142, the thickness of the second conductive layer 15 is the minimum thickness of the second conductive layer 15, and the thickness of the first portion 141 is the maximum thickness or average thickness of the first portion 141, so as to further improve the stability of the connection conductivity of the conductive stack located in the groove g1 area and have the effect of reducing impedance.

[0059] The plurality of LEDs are connected to the first conductive layer 14. The resistivity of the second conductive layer 15 is lower than that of the first conductive layer 14, thereby improving the conductive performance of the connection between the LEDs and reducing the impedance of the first conductive layer 14.

[0060] Optionally, the material of the first conductive layer 14 is a transparent conductive material, such as an oxide such as indium tin oxide or indium zinc oxide.

[0061] The material of the second conductive layer 15 can be selected from at least one of metals or metal oxides. For example, the second conductive layer 15 can be formed using a metal element selected from chromium, copper, aluminum, gold, platinum, silver, zinc, molybdenum, tantalum, titanium, tungsten, manganese, nickel, iron, and cobalt; an alloy containing any of the above metal elements; or a metal oxide such as indium tin oxide or indium zinc oxide in combination with any of the above metal elements.

[0062] Optionally, the second conductive layer 15 is a single-layer structure or a multi-layer stacked structure.

[0063] Optionally, the light emitting diode (LED) includes a light emitting layer and a first electrode and a second electrode located on opposite sides of the light emitting layer, wherein the first electrode is one end of the light emitting diode (LED) and the second electrode is the other end of the light emitting diode (LED).

[0064] Optionally, the groove g1 includes a first groove g11 and a second groove g12 that are connected to each other, wherein the first groove g11 passes through the light-emitting diode epitaxial layer 12 , and the second groove g12 passes through the second conductive bonding layer 11 and the first conductive bonding layer 17 .

[0065] The notch width k1 of the first groove g11 is greater than the notch width k2 of the second groove g12. The thickness of the first conductive layer 14 located in the first groove g11 is greater than the thickness of the first conductive layer 14 located in the second groove g12. The thickness of the second conductive layer 15 located in the first groove g11 is greater than the thickness of the second conductive layer 15 located in the second groove g12.

[0066] The sum of the thickness of the portion of the first conductive layer 14 located in the second groove g12 and the thickness of the portion of the second conductive layer 15 located in the second groove g12 is greater than or equal to the thickness of the first portion 141 .

[0067] It should be understood that the second groove g12 is located in the deepest area of ​​the groove g1, so compared with the area of ​​the first groove g11, the second part 142 of the first conductive layer 14 and the part of the second conductive layer 15 located in the second groove g12 are both thinner. Therefore, the second part 142 located in the second groove g12 area is more likely to break or have a false connection.

[0068] Therefore, setting the thickness of the conductive stack located in the second groove g12 area to be greater than or equal to the thickness of the first portion 141 of the first conductive layer 14 can more accurately compensate for the thinner area of ​​the second portion 142 and improve the conductive connectivity and stability.

[0069] In addition, it can be understood that since the first conductive layer 14 and the second conductive layer 15 are both formed by a deposition process and the first groove g11 is located in the upper area of ​​the groove g1, the thickness of the conductive stack located in the first groove g11 area is thicker than that in the second groove g12 area.

[0070] Therefore, the thickness of the conductive stack located in the first groove g11 region is greater than the thickness of the first portion 141 of the first conductive layer 14 , further improving the conductive connection and stability, and reducing the impedance.

[0071] Optionally, the light emitting diode panel 100 may further include a third conductive layer 19 , which is disposed between the light emitting diode LED and the second conductive bonding layer 11 , and the second groove g12 passes through the third conductive layer 19 .

[0072] Optionally, the inclination angle a1 of the groove wall of the first groove g11 is smaller than the inclination angle a2 of the groove wall of the second groove g12, and the groove opening width k2 of the second groove g12 is smaller than the groove opening width k1 of the first groove g11, so that the volume of the second groove g12 is relatively small, making it easier for the second conductive layer 15 to fill the area of ​​the second groove g12, thereby further improving the continuity and stability of the conductive connection of the conductive stack located in the channel g1 area.

[0073] Optionally, the second conductive layer 15 includes a connected covering portion 151 and a filling portion 152, wherein the covering portion 151 covers the area of ​​the second portion 142 corresponding to the first groove g11 and the filling portion 152 fills the recessed portion ax of the second portion 142 corresponding to the second groove g12.

[0074] Among them, the filling portion 152 fills the recessed portion ax corresponding to the second groove g12, which not only ensures the conductive stability and continuity of the conductive stack in the second groove g12 area to the greatest extent, but also makes the current no longer need to pass through the bottom area of ​​the recessed portion ax, thereby reducing the current transmission path and improving the conductive performance.

[0075] Optionally, in some embodiments, as shown in FIG. 3 , the second conductive layer 15 covers the surface of the second portion 142 away from the substrate 16 .

[0076] The method for preparing the light emitting diode panel 100 of the embodiment of the present application includes the following steps:

[0077] In step S1, referring to FIG4 , the light-emitting diode epitaxial material layer, the first conductive bonding material layer, the second conductive bonding material layer, and the third conductive material layer of the driver substrate qd are patterned to form the second conductive bonding layer 11, the light-emitting diode epitaxial layer 12, the first conductive bonding layer 17, and the groove g1. Subsequently, a protective material layer bh is formed on the driver substrate qd, covering the second conductive bonding layer 11, the light-emitting diode epitaxial layer 12, the first conductive bonding layer 17, and the groove g1.

[0078] Alternatively, the substrate 16 of the drive substrate qd may be a silicon-based substrate or a glass substrate, etc. The materials of the first conductive bonding layer 17 and the second conductive bonding layer 11 may each be at least one of Cr, Ti, Pt, Sn, Au and Cu, or a combination of any of the above metal elements.

[0079] In step S2, referring to FIG5 , the protective material layer bh is patterned to form a protective layer 13 and an opening 13a. The opening 13a exposes the light-emitting diode (LED). Subsequently, a first conductive layer 14 is formed on the protective layer 13. The first conductive layer 14 is connected to the plurality of light-emitting diodes (LED) and extends to cover the groove g1 region.

[0080] In step S3, referring to FIG6 , a patterned photoresist layer pr is formed on the first conductive layer 14. The photoresist layer pr is correspondingly disposed on the region of the light-emitting diode LED. Subsequently, a conductive material layer dd is formed on the photoresist layer pr. The conductive material layer dd is disconnected at the edge of the photoresist layer pr to form a second conductive layer 15 covering the region of the groove g1.

[0081] In step S4 , referring to FIG. 7 , the photoresist layer pr and the conductive material layer dd on the photoresist layer pr are removed.

[0082] Optionally, in some embodiments, as shown in Figures 8 and 9, compared with the corresponding embodiment of Figure 1, the difference of this embodiment is that the second conductive layer 15 includes an electroplating seed layer 15a and an electroplating metal layer 15b arranged on the electroplating seed layer 15a, and the electroplating seed layer 15a covers the first conductive layer 14.

[0083] The electroplating metal layer 15 b fills the recessed portion ax of the electroplating seed layer 15 a located in the second groove g12 region.

[0084] Compared with the vapor deposition process, the second conductive layer 15 is formed by the electroplating process. The thickness of the second conductive layer 15 is more uniform, which can improve the thickness uniformity of the conductive stack in the groove g1 area, thereby improving the continuity and stability of the conductive performance of the conductive stack.

[0085] It should be noted that other structures of the LED panel 100 of this embodiment are similar to or identical to those of the embodiment corresponding to FIG. 1 .

[0086] In the light-emitting diode panel of the embodiment of the present application, a second conductive layer is provided in the area corresponding to the groove to cover the first conductive layer so as to thicken the thickness of the first conductive layer corresponding to the groove area, thereby compensating for the risk of thinning, breaking or false connection of the first conductive layer in the groove, thereby improving the connection and conduction capability of the first conductive layer between the light-emitting diodes and improving the performance and manufacturing yield of the light-emitting diode panel.

[0087] The above is a detailed introduction to a light-emitting diode panel provided in an embodiment of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and core idea of ​​the present application. At the same time, for those skilled in the art, based on the idea of ​​the present application, there may be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A light emitting diode panel, comprising: A driving substrate, the driving substrate comprising a substrate and a first conductive bonding layer disposed on the substrate; A second conductive bonding layer, wherein the second conductive bonding layer is bonded to a surface of the first conductive bonding layer away from the substrate; A light-emitting diode epitaxial layer, wherein the light-emitting diode epitaxial layer comprises a plurality of light-emitting diodes, wherein the light-emitting diodes are arranged on a side of the second conductive bonding layer away from the substrate, wherein one end of the light-emitting diodes is electrically connected to the second conductive bonding layer, and a groove is arranged between two adjacent light-emitting diodes, wherein the groove penetrates the light-emitting diode epitaxial layer, the second conductive bonding layer and the first conductive bonding layer; a protective layer, the protective layer covering the light-emitting diode epitaxial layer and the groove, an opening being provided on the protective layer, and the opening exposing the light-emitting diode; a first conductive layer, the first conductive layer covers the protective layer and is connected to the other end of the light-emitting diode through the opening, and a portion of the first conductive layer covers the region of the groove; The second conductive layer is directly disposed on a side of the first conductive layer away from the substrate, and the second conductive layer at least covers a region of the groove.

2. The light emitting diode panel according to claim 1, wherein: The first conductive layer includes a first portion and a second portion connected to each other, the first portion is arranged in the region of the light emitting diode, the second portion is arranged in the region of the groove, and the thickness of the first portion is greater than the thickness of the second portion; In the trench region, a sum of a thickness of the second portion and a thickness of the second conductive layer is greater than or equal to a thickness of the first portion.

3. The light emitting diode panel according to claim 2, wherein: The groove comprises a first groove and a second groove which are connected to each other, wherein the first groove penetrates the light-emitting diode epitaxial layer, and the second groove penetrates the second conductive bonding layer and the first conductive bonding layer; The notch width of the first groove is greater than the notch width of the second groove, the thickness of the first conductive layer located in the first groove is greater than the thickness of the first conductive layer located in the second groove, and the thickness of the second conductive layer located in the first groove is greater than the thickness of the second conductive layer located in the second groove; A sum of a thickness of a portion of the first conductive layer located in the second groove and a thickness of a portion of the second conductive layer located in the second groove is greater than or equal to a thickness of the first portion.

4. The light emitting diode panel according to claim 3, wherein: The second conductive layer includes a covering portion and a filling portion which are connected to each other. The covering portion covers a region of the second portion corresponding to the first groove, and the filling portion fills a recessed portion of the second portion corresponding to the second groove.

5. The light emitting diode panel according to claim 3, wherein: The second conductive layer covers a surface of the second portion away from the substrate.

6. The light emitting diode panel according to claim 3, wherein: The light emitting diode panel further includes a third conductive layer, wherein the third conductive layer is disposed between the light emitting diode and the second conductive bonding layer, and the second groove penetrates through the third conductive layer.

7. The light emitting diode panel according to claim 1, wherein: The groove has a width less than 0.6 micrometers.

8. The light emitting diode panel according to any one of claims 1 to 7, wherein: The second conductive layer is a single-layer structure.

9. The light emitting diode panel according to any one of claims 1 to 7, wherein: The second conductive layer is a multi-layer stacked structure.

10. The light emitting diode panel according to claim 9, wherein: The second conductive layer includes an electroplating seed layer and an electroplating metal layer disposed on the electroplating seed layer, and the electroplating seed layer covers the first conductive layer.

11. A light emitting diode panel, comprising: A driving substrate, the driving substrate comprising a substrate and a first conductive bonding layer disposed on the substrate; A second conductive bonding layer, wherein the second conductive bonding layer is bonded to a surface of the first conductive bonding layer away from the substrate; A light-emitting diode epitaxial layer, wherein the light-emitting diode epitaxial layer comprises a plurality of light-emitting diodes, wherein the light-emitting diodes are arranged on a side of the second conductive bonding layer away from the substrate, wherein one end of the light-emitting diodes is electrically connected to the second conductive bonding layer, and a groove is arranged between two adjacent light-emitting diodes, wherein the groove penetrates the light-emitting diode epitaxial layer, the second conductive bonding layer and the first conductive bonding layer; a protective layer, the protective layer covering the light-emitting diode epitaxial layer and the groove, an opening being provided on the protective layer, and the opening exposing the light-emitting diode; a first conductive layer, the first conductive layer covers the protective layer and is connected to the other end of the light-emitting diode through the opening, a portion of the first conductive layer covers the region of the groove, and the material of the first conductive layer is a transparent conductive material; The second conductive layer is directly disposed on a side of the first conductive layer away from the substrate, and the second conductive layer at least covers a region of the groove.

12. The light emitting diode panel according to claim 11, wherein: The first conductive layer includes a first portion and a second portion connected to each other, the first portion is arranged in the region of the light emitting diode, the second portion is arranged in the region of the groove, and the thickness of the first portion is greater than the thickness of the second portion; In the trench region, a sum of a thickness of the second portion and a thickness of the second conductive layer is greater than or equal to a thickness of the first portion.

13. The light emitting diode panel according to claim 12, wherein: The groove comprises a first groove and a second groove which are connected to each other, wherein the first groove penetrates the light-emitting diode epitaxial layer, and the second groove penetrates the second conductive bonding layer and the first conductive bonding layer; The notch width of the first groove is greater than the notch width of the second groove, the thickness of the first conductive layer located in the first groove is greater than the thickness of the first conductive layer located in the second groove, and the thickness of the second conductive layer located in the first groove is greater than the thickness of the second conductive layer located in the second groove; A sum of a thickness of a portion of the first conductive layer located in the second groove and a thickness of a portion of the second conductive layer located in the second groove is greater than or equal to a thickness of the first portion.

14. The light emitting diode panel according to claim 13, wherein: The second conductive layer includes a covering portion and a filling portion which are connected to each other. The covering portion covers a region of the second portion corresponding to the first groove, and the filling portion fills a recessed portion of the second portion corresponding to the second groove.

15. The light emitting diode panel according to claim 13, wherein: The second conductive layer covers a surface of the second portion away from the substrate.

16. The light emitting diode panel according to claim 13, wherein: The light emitting diode panel further includes a third conductive layer, wherein the third conductive layer is disposed between the light emitting diode and the second conductive bonding layer, and the second groove penetrates through the third conductive layer.

17. The light emitting diode panel according to claim 11, wherein: The groove has a width less than 0.6 micrometers.

18. The light emitting diode panel according to any one of claims 11 to 17, wherein: The second conductive layer is a single-layer structure.

19. The light emitting diode panel according to any one of claims 11 to 17, wherein: The second conductive layer is a multi-layer stacked structure.

20. The light emitting diode panel according to claim 19, wherein: The second conductive layer includes an electroplating seed layer and an electroplating metal layer disposed on the electroplating seed layer, and the electroplating seed layer covers the first conductive layer.

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