Light detection device

Abstract

This light detection device comprises: a first photoelectric conversion unit that is provided on a substrate and converts light in a first wavelength range into electric charges; a second photoelectric conversion unit that faces the first photoelectric conversion unit, is provided separated from the first photoelectric conversion unit, and converts light in a second wavelength range, which is different from the first wavelength range, into electric charges; a partition wall that is provided so as to surround the first photoelectric conversion unit between the first photoelectric conversion unit and the second photoelectric conversion unit, and that has a side wall inclined with respect to the surface of the substrate; and an optical filter that is provided so as to be surrounded by the partition wall between the first photoelectric conversion unit and the second photoelectric conversion unit, and that has laminated therein, from the first photoelectric conversion unit toward the second photoelectric conversion unit, on a first layer having a first refractive index, a second layer having a second refractive index different from the first refractive index, the optical filter selectively transmitting at least light in the first wavelength range.

Description

Photodetector

[0001] The present disclosure relates to a light detection device.

[0002] Patent Document 1 discloses a solid-state imaging device. The solid-state imaging device includes a pixel array section in which a plurality of pixels are arranged two-dimensionally. Each pixel includes a first photoelectric conversion region formed on an upper layer of a semiconductor layer and a second photoelectric conversion region formed on the semiconductor layer, the first photoelectric conversion region and the second photoelectric conversion region being aligned on the same optical axis. A first filter is formed on the first photoelectric conversion region, transmitting light in a predetermined wavelength range corresponding to a color component. A second filter is formed between the first and second photoelectric conversion regions, transmitting light in the infrared (IR) range. The second filter is a multilayer filter. The multilayer filter is formed by periodically stacking high-refractive-index materials and low-refractive-index materials alternately. The transmission band of the multilayer filter is set to the infrared wavelength range. In other words, the multilayer filter selectively transmits infrared light, allowing it to be received by the second photoelectric conversion region.

[0003] A solid-state imaging device configured in this manner can generate a high-resolution infrared light image while maintaining high image quality of a visible light image.

[0004] Japanese Patent Application Laid-Open No. 2017-208496

[0005] In the above-described solid-state imaging device, the second filter does not take into consideration oblique incidence characteristics. That is, when light is incident on the second filter, if the angle of incidence of the light changes, the film thickness of each layer of the second filter through which the light passes changes, making it difficult to obtain optimal light transmittance. For this reason, a photodetector capable of improving oblique incidence characteristics has been desired.

[0006] The photodetector according to a first embodiment of the present disclosure includes a first photoelectric conversion unit disposed on a substrate and converting light in a first wavelength range into electric charges; a second photoelectric conversion unit disposed opposite the first photoelectric conversion unit and spaced apart from the first photoelectric conversion unit and converting light in a second wavelength range different from the first wavelength range into electric charges; a partition wall disposed between the first photoelectric conversion unit and the second photoelectric conversion unit so as to surround the periphery of the first photoelectric conversion unit and having side walls inclined with respect to the surface of the substrate; and an optical filter disposed between the first photoelectric conversion unit and the second photoelectric conversion unit so as to be surrounded by the partition wall and having a first layer having a first refractive index and a second layer having a second refractive index different from the first refractive index stacked from the first photoelectric conversion unit to the second photoelectric conversion unit, and which at least selectively transmits light in the first wavelength range.

[0007] In a photodetector according to a second embodiment of the present disclosure, at least the portion of the partition that contacts the optical filter in the photodetector according to the first embodiment is formed from a material that has a lower refractive index than the optical filter.

[0008] In a light detection device according to a third embodiment of the present disclosure, in the light detection device according to the first embodiment, the optical filter is a multilayer interference filter.

[0009] In a photodetector according to a fourth embodiment of the present disclosure, in the photodetector according to the first embodiment, the optical filter is a surface plasmon resonance filter.

[0010] A photodetector according to a fifth embodiment of the present disclosure includes a first photoelectric conversion unit disposed on a substrate and converting light in a first wavelength range into electric charges; a second photoelectric conversion unit disposed opposite the first photoelectric conversion unit and spaced apart from the first photoelectric conversion unit and converting light in a second wavelength range different from the first wavelength range into electric charges; a partition wall disposed between the first photoelectric conversion unit and the second photoelectric conversion unit so as to surround the first photoelectric conversion unit; and an optical filter disposed between the first photoelectric conversion unit and the second photoelectric conversion unit, the optical filter being surrounded by the partition wall and disposed from the surface of the substrate along the side wall of the partition wall, from the first photoelectric conversion unit to the second photoelectric conversion unit, and having a first layer having a first refractive index and a second layer having a second refractive index different from the first refractive index stacked on top of the first layer, and which at least selectively transmits light in the first wavelength range.

[0011] FIG. 1 is a circuit block diagram illustrating a system configuration of a photodetector according to a first embodiment of the present disclosure. FIG. 2 is a circuit diagram of a pixel and a pixel circuit of the photodetector shown in FIG. 1. FIG. 3 is a schematic diagram illustrating the schematic configuration of the pixel and the pixel circuit shown in FIG. 2. FIG. 4 is a plan view of a main portion illustrating a specific configuration of the pixel shown in FIGS. 2 and 3. FIG. 5 is a cross-sectional view (cross-sectional view taken along the A-A line shown in FIG. 4) of a main portion illustrating a specific configuration of the pixel shown in FIGS. 2 and 3. FIG. 6 is an enlarged cross-sectional view of a main portion illustrating a specific configuration of an optical filter disposed in the pixel shown in FIG. 5. FIG. 7A is an enlarged cross-sectional view of a main portion illustrating a specific configuration of a partition wall and an optical filter shown in FIG. 5. FIG. 7B is an enlarged cross-sectional view corresponding to FIG. 7A illustrating a specific configuration of a partition wall and an optical filter of a photodetector according to a comparative example. FIG. 8 is a graph illustrating oblique incidence characteristics of an optical filter of a photodetector according to a comparative example. FIG. 9 is a table illustrating the relationships between the refractive indexes of the materials, the critical angles, and the inclination angles of the sidewalls of the partitions shown in FIG. 8 for the multiple types of materials forming the partitions. FIG. 10 is a cross-sectional view illustrating a first step in a method for manufacturing a photodetector according to the first embodiment. FIG. 11 is a cross-sectional view illustrating a second step. FIG. 12 is a cross-sectional view illustrating a third step. FIG. 13 is a cross-sectional view illustrating a fourth step. FIG. 14 is a cross-sectional view illustrating a fifth step. FIG. 15 is a cross-sectional view illustrating a sixth step. FIG. 16 is a cross-sectional view illustrating a seventh step. FIG. 17 is a cross-sectional view illustrating an eighth step. FIG. 18 is a cross-sectional view illustrating a ninth step. FIG. 19 is a plan view of a main part corresponding to FIG. 4 illustrating a specific configuration of a pixel of a photodetector according to a second embodiment of the present disclosure. FIG. 20 is a cross-sectional view of a main part corresponding to FIG. 5 illustrating a specific configuration of a pixel of a photodetector according to a third embodiment of the present disclosure. FIG. 21 is a cross-sectional view illustrating a first step in a method for manufacturing a photodetector according to the third embodiment. FIG. 22 is a cross-sectional view illustrating a second step. FIG. 23 is a cross-sectional view illustrating a third step. FIG. 24 is a cross-sectional view illustrating a fourth step. Fig. 25 is a cross-sectional view at a fifth step. Fig. 26 is a cross-sectional view at a sixth step. Fig. 27 is a cross-sectional view at a seventh step. Fig. 28 is a cross-sectional view at an eighth step. Fig. 29 is a cross-sectional view of a main part corresponding to Fig. 5 for explaining a specific configuration of a pixel of a photodetector according to a fourth embodiment of the present disclosure.FIG. 30 is a cross-sectional view illustrating a first step in a method for manufacturing a photodetector according to a fourth embodiment. FIG. 31 is a cross-sectional view illustrating a second step. FIG. 32 is a cross-sectional view illustrating a third step. FIG. 33 is a cross-sectional view illustrating a fourth step. FIG. 34 is a cross-sectional view illustrating a fifth step. FIG. 35 is a cross-sectional view illustrating a sixth step. FIG. 36 is a cross-sectional view illustrating a seventh step. FIG. 37 is a cross-sectional view illustrating an eighth step. FIG. 38 is a cross-sectional view illustrating a ninth step. FIG. 39 is a cross-sectional view illustrating a tenth step. FIG. 40 is a cross-sectional view illustrating an eleventh step. FIG. 41 is a plan view illustrating a specific configuration of a pixel of a photodetector according to a fifth embodiment of the present disclosure, corresponding to FIG. 4. FIG. 42 is a cross-sectional view illustrating a specific configuration of the pixel shown in FIG. 41, corresponding to FIG. 5 (a cross-sectional view taken along the line B-B shown in FIG. 41). FIG. 43 is a cross-sectional view illustrating a specific configuration of a pixel of a photodetector according to a sixth embodiment of the present disclosure, corresponding to FIG. 5. FIG. 44 is a cross-sectional view illustrating a specific configuration of a pixel of a photodetector according to a seventh embodiment of the present disclosure, corresponding to FIG. 5. Fig. 45 is a cross-sectional view of a main part corresponding to Fig. 5 , illustrating a specific configuration of a pixel of a photodetector according to an eighth embodiment of the present disclosure. Fig. 46 is a block diagram illustrating an example of a schematic configuration of a vehicle control system. Fig. 47 is an explanatory diagram illustrating an example of installation positions of an outside-vehicle information detection unit and an imaging unit. Fig. 48 is a block diagram illustrating an example of a schematic configuration of an in-vivo information acquisition system.

[0012] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The description will be made in the following order. 1. First Embodiment The first embodiment describes a first example in which the present technology is applied to a photodetector. The first embodiment describes the configuration and manufacturing method of the photodetector. In particular, the first embodiment describes the system configuration, circuit configuration, planar configuration, and cross-sectional configuration of the photodetector. 2. Second Embodiment The second embodiment describes a second example in which the configuration of the partitions arranged around the pixels in the photodetector according to the first embodiment is changed. 3. Third Embodiment The third embodiment describes a third example in which the configuration of the partitions arranged around the pixels in the photodetector according to the first embodiment is changed. The third embodiment also describes a manufacturing method of the photodetector, including a manufacturing method of the partitions. 4. Fourth Embodiment The fourth embodiment describes a fourth example in which the configuration of the optical filter in the photodetector according to the first embodiment is changed. The fourth embodiment also describes a manufacturing method of the photodetector, including a manufacturing method of the optical filter. 5. Fifth Embodiment The fifth embodiment describes a fifth example in which the configuration of the optical filter is changed in the photodetector according to the first embodiment. 6. Sixth Embodiment The sixth embodiment describes a sixth example in which the configuration of the pixel and optical filter is changed in the photodetector according to the first embodiment. 7. Seventh Embodiment The sixth embodiment describes a seventh example in which the photodetector according to the fourth embodiment is combined with the photodetector according to the sixth embodiment. 8. Eighth Embodiment The eighth embodiment describes an eighth example in which the photodetector according to the fifth embodiment is combined with the photodetector according to the sixth embodiment. 9. Application Example to a Moving Body This application example describes an example in which the present technology is applied to a moving body. 10. Application to an In-Vivo Information Acquisition System This application example describes an example in which the present technology is applied to an in-vivo information acquisition system. 11. Other Embodiments

[0013] 1. First Embodiment A photodetector 1 and a method for manufacturing the photodetector 1 according to a first embodiment of the present disclosure will be described with reference to FIGS.

[0014] Here, the arrow X direction shown as appropriate in the drawings indicates one planar direction of the photodetector 1 placed on a flat surface for convenience. The arrow Y direction indicates another planar direction perpendicular to the arrow X direction. The arrow Z direction indicates an upward direction perpendicular to the arrow X and arrow Y directions. In other words, the arrow X direction, arrow Y direction, and arrow Z direction exactly correspond to the X-axis direction, Y-axis direction, and Z-axis direction, respectively, of a three-dimensional coordinate system. Note that these directions are shown to facilitate understanding of the explanation and do not limit the directions of the present technology.

[0015] [Configuration of the Photodetector 1] (1) Overall System Configuration of the Photodetector 1 FIG. 1 shows an example of a circuit block for explaining the system configuration of the photodetector 1. As shown in FIG.

[0016] The photodetector 1 has a light receiving region 101 in the center of a substrate 2 when viewed from the direction of the arrow Z (hereinafter simply referred to as "in a plan view"). A plurality of pixels 100 are regularly arranged in the light receiving region 101. A plurality of pixels 100 are arranged with the direction of the arrow X as a first direction, and a plurality of pixels 100 are arranged with the direction of the arrow Y as a second direction. In other words, the plurality of pixels 100 are arranged in a matrix. In the pixels 100, incident light is converted into electric charges as signals.

[0017] The photodetector 1 further includes a peripheral circuit disposed around the light-receiving region 101. The peripheral circuit includes at least a readout circuit RC1, a readout circuit RC2, and a drive circuit DR.

[0018] As will be explained in detail later, one pixel 100 includes two or more photoelectric conversion units. Here, one pixel 100 is constructed of two types of photoelectric conversion units stacked in the direction of the arrow Z. The readout circuit RC1 includes, for example, a pixel circuit that reads, as a signal, the charges converted in one of the two types of photoelectric conversion units. The readout circuit RC2 includes, for example, a pixel circuit that reads, as a signal, the charges converted in the other of the two types of photoelectric conversion units. The drive circuit DR outputs a drive signal that drives the photoelectric conversion units of the pixel 100.

[0019] (2) Circuit Configuration and Schematic Configuration of Each of the Pixel 100, Pixel Circuit PC1, and Pixel Circuit PC2 Fig. 2 shows an example of the circuit configuration of the pixel 100, pixel circuit PC1, and pixel circuit PC2. Fig. 3 shows an example of the schematic configuration of the pixel 100, pixel circuit PC1, and pixel circuit PC2.

[0020] The pixel 100 includes two photoelectric conversion units: a first photoelectric conversion unit 3 and a second photoelectric conversion unit 9. The wavelength band of light converted in the first photoelectric conversion unit 3 is different from the wavelength band of light converted in the second photoelectric conversion unit 9.

[0021] The first photoelectric conversion unit 3 is composed of a semiconductor photodiode. The first photoelectric conversion unit 3 generates electric charges according to the amount of incident light. The electric charges are sent as signals to the pixel circuit PC1. The pixel circuit PC1 constitutes a readout circuit RC1 (see FIG. 1).

[0022] The pixel circuit PC1 is connected to the first photoelectric conversion unit 3. Here, the pixel circuit PC1 includes a transfer transistor TG1, a reset transistor RST1, an amplification transistor AMP1, and a selection transistor SEL1. Transistors such as the transfer transistor TG1 are configured, for example, by n-channel conductivity type insulated gate field effect transistors (IGFETs). Note that the pixel circuit PC1 may be configured to include only the reset transistor RST1, the amplification transistor AMP1, and the selection transistor SEL1 without including the transfer transistor TG1. Furthermore, the pixel circuit PC1 may be configured to further include a floating diffusion conversion gain switching transistor.

[0023] The specific configuration of the pixel circuit PC1 is as follows: One of a pair of main electrodes of the transfer transistor TG1 is connected to the first photoelectric conversion unit 3. The other main electrode is connected to the gate electrode of the amplification transistor AMP1 through a floating diffusion FD1. A control signal line (horizontal signal line) TS that transfers a control signal is connected to the gate electrode. One of a pair of main electrodes of the reset transistor RST1 is connected to the floating diffusion FD1. The other main electrode is connected to a power supply voltage VDD. A reset signal line RS1 that transfers a reset signal is connected to the gate electrode. One of the pair of main electrodes of the amplification transistor AMP1 is connected to the power supply voltage VDD. The other main electrode is connected to one of a pair of main electrodes of the selection transistor SEL1. The other main electrode of the selection transistor SEL1 is connected to an output signal line (vertical signal line) VSL1. The gate electrode is connected to a selection signal line SS1. Here, the control signal line TS is connected to a drive circuit DR (see FIG. 1), and the output signal line VSL1 is connected to a readout circuit RC1 (see FIG. 1).

[0024] Here, the second photoelectric conversion unit 9 is configured with an organic photodiode. The second photoelectric conversion unit 9 generates electric charges according to the amount of incident light. The electric charges are sent as signals to the pixel circuit PC2. The pixel circuit PC2 constitutes a readout circuit RC2 (see FIG. 1).

[0025] The pixel circuit PC2 is connected to the second photoelectric conversion unit 9. Here, the pixel circuit PC2 includes a reset transistor RST2, an amplification transistor AMP2, and a selection transistor SEL2. The pixel circuit PC2 may also be configured to further include a floating diffusion conversion gain switching transistor.

[0026] The second photoelectric conversion unit 9 is connected to a drive signal line VOA that supplies a drive voltage to one electrode of each pixel 100 and a power supply voltage line VOU that supplies a fixed voltage to the other electrodes of the plurality of pixels 100 .

[0027] The second photoelectric conversion unit 9 is connected to the gate electrode of the amplification transistor AMP2 through a floating diffusion FD2. One of the pair of main electrodes of the reset transistor RST2 is connected to the floating diffusion FD2. The other main electrode is connected to a power supply voltage VDD. A reset signal line RS2 that transfers a reset signal is connected to the gate electrode. One of the pair of main electrodes of the amplification transistor AMP2 is connected to the power supply voltage VDD. The other main electrode is connected to one of the pair of main electrodes of the selection transistor SEL2. The other main electrode of the selection transistor SEL2 is connected to an output signal line (vertical signal line) VSL2. The gate electrode is connected to a selection signal line SS2. Here, the drive signal line VOA is connected to the drive circuit DR (see FIG. 1). Furthermore, the output signal line VSL2 is connected to a readout circuit RC2 (see FIG. 1).

[0028] Here, in the present technology, the through wiring 52 (or the through wiring 42) is described as a component. The through wiring 52 includes two types: a first through wiring 521 and a second through wiring 522. The first through wiring 521 constitutes a part of the floating diffusion FD2 that connects one electrode of the second photoelectric conversion unit 9 and the pixel circuit PC2. The second through wiring 522 constitutes a connection wiring that connects the other electrode of the second photoelectric conversion unit 9 and the drive signal line VOA. In the description of the present technology, when there is no particular need to distinguish between the first through wiring 521 and the second through wiring 522, they will be collectively described simply as "through wiring 52."

[0029] The photodetector 1 further includes an image processing circuit (not shown). Each of the pixel circuits PC1 and PC2 is connected to the image processing circuit. The image processing circuit includes, for example, an analog-to-digital converter (ADC) and a digital signal processor (DSP). The charge converted from light by the pixel 100 is an analog signal. This analog signal is amplified in each of the pixel circuits PC1 and PC2. The ADC converts the analog signals output from each of the pixel circuits PC1 and PC2 into digital signals. The DSP performs functional processing of the digital signals. In other words, the image processing circuit performs signal processing for image creation.

[0030] (3) Device Configuration of Photodetector 1 Fig. 4 shows an example of the planar configuration of a pixel 100 of the photodetector 1 according to the first embodiment. Fig. 5 shows an example of the longitudinal cross-sectional configuration of the pixel 100 shown in Fig. 4. The photodetector 1 is constructed as a stacked back-illuminated solid-state imaging device that converts incident light L incident from the outside in the direction of arrow Z into electric charges.

[0031] As described above, the photodetector 1 includes a plurality of pixels 100 that convert incident light L into electric charges. In a plan view, the planar shape of each pixel 100 is formed into a rectangular shape that is approximately square. FIG. 4 shows a total of four pixels 100, including two pixels 100 arranged in the direction of the arrow X and two pixels 100 arranged in the direction of the arrow Y. Furthermore, when viewed in the direction of the arrow Y (hereinafter simply referred to as "in a side view") and in a plan view, a partition 110 is disposed along the periphery of each pixel 100. The partition 110 is used as an inter-pixel isolation region. Therefore, each pixel 100 is electrically and optically isolated from the other pixels 100 by the partition 110.

[0032] In a side view, the photodetector 1 includes, as main components, a base 2, a first photoelectric conversion unit 3, an optical filter (first optical filter) 7, a second photoelectric conversion unit 9, a charge accumulation and transfer layer 93, and an optical filter (second optical filter) 12. The pixel 100 includes, as main components, the first photoelectric conversion unit 3, the optical filter 7, the second photoelectric conversion unit 9, the charge accumulation and transfer layer 93, the optical filter 12, and a partition wall 110. The photodetector 1 further includes an optical lens 13.

[0033] (4) Configuration of Base 2 As shown in Fig. 5, in the photodetector 1, the base 2 is formed of, for example, a single-crystal silicon (Si) substrate. Although only a portion of the base 2 is shown here, one or more other bases are stacked on the opposite side of the base 2 in the direction of the arrow Z. Parts of the readout circuit RC1 and the readout circuit RC2 (see Fig. 1) may be disposed on the base 2. Except in this case, the readout circuit RC1, the readout circuit RC2, and the drive circuit DR are disposed on other bases.

[0034] Here, each of the readout circuits RC1 and RC2 includes a column signal processing circuit and an output circuit. The drive circuit DR includes a vertical drive circuit and a horizontal drive circuit. Furthermore, another substrate includes a control circuit.

[0035] First, the control circuit receives an input clock and data instructing the operation mode, etc., and outputs data such as internal information of the photodetector device 1. That is, the control circuit generates clock signals and control signals that serve as references for the operation of the vertical drive circuit, column signal processing circuit, horizontal drive circuit, etc., based on a vertical synchronization signal, a horizontal synchronization signal, and a master clock. These signals are then input to the vertical drive circuit, column signal processing circuit, horizontal drive circuit, etc.

[0036] The vertical drive circuit is configured, for example, with a shift register. The vertical drive circuit selects pixel drive wirings and supplies pulses to the selected pixel drive wirings to drive the pixels 100. The pixels 100 are driven row by row. That is, the vertical drive circuit sequentially selects and scans each pixel 100 in the pixel region row by row in the vertical direction. Signal charges generated in the photoelectric conversion elements of each pixel 100 according to the amount of light received are supplied as pixel signals to a column signal processing circuit via vertical signal lines.

[0037] The column signal processing circuit is arranged, for example, for each column of pixels 100. The column signal processing circuit performs signal processing such as noise removal for each pixel column on signals output from one row of pixels 100. That is, the column signal processing circuit performs signal processing such as CDS (Correlated Double Sampling) that removes fixed pattern noise unique to the pixels 100, signal amplification, and AD conversion. A horizontal selection switch is connected between the output stage of the column signal processing circuit and the horizontal signal line.

[0038] The horizontal drive circuit is configured by, for example, a shift register, and sequentially outputs horizontal scanning pulses to select each of the column signal processing circuits in turn, causing each of the column signal processing circuits to output a pixel signal to a horizontal signal line.

[0039] The output circuit processes and outputs signals sequentially supplied from each column signal processing circuit via a horizontal signal line. For example, the output circuit may perform only buffering, or may perform black level adjustment, column variation correction, various digital signal processing, etc. The input / output terminals exchange signals between the photodetector 1 and the outside.

[0040] (5) Configuration of First Photoelectric Conversion Unit 3 The first photoelectric conversion unit 3 is disposed within the base 2. A first photoelectric conversion unit 3 is disposed for each pixel 100. Although a detailed configuration of the first photoelectric conversion unit 3 is not shown, the first photoelectric conversion unit 3 is configured by a semiconductor photodiode including a p-type semiconductor region and an n-type semiconductor region. Here, the first photoelectric conversion unit 3 is configured by, for example, a PIN (Positive Intrinsic Negative) type photodiode.

[0041] In the first embodiment, the first photoelectric conversion unit 3 receives incident light L in the infrared wavelength range as the first wavelength range, and generates photoelectrically converted charges according to the amount of received light. The charges generated in the first photoelectric conversion unit 3 are output to the pixel circuit PC1.

[0042] (6) Configuration of Optical Filter 7 The optical filter 7 is laminated on the surface of the base 2 on the arrow Z direction side with an insulator 700 interposed therebetween. In other words, the optical filter 7 is disposed between the first photoelectric conversion unit 3 and the second photoelectric conversion unit 9, surrounded by the partition wall 110. In the first embodiment, the optical filter 7 is configured as a multilayer interference filter that selectively transmits at least light in the first wavelength range.

[0043] 6 shows an example of the longitudinal cross-sectional structure of the optical filter 7. The optical filter 7 is formed by stacking a first layer 711 having a first refractive index and a second layer 721 having a second refractive index different from the first refractive index, from the first photoelectric conversion section 3 to the second photoelectric conversion section 9, and repeating this stacking configuration. In the first embodiment, the optical filter 7 is formed by alternately stacking the first layers 711, 712, 713, and 714 having the first refractive index and the second layers 721, 722, and 723 having the second refractive index.

[0044] Here, each of the first layer 711, the first layer 712, the first layer 713, and the first layer 714 is made of, for example, silicon oxide (SiO ２ ) is formed. ２The refractive index of the first layer 712 is 1.45 (see FIG. 9 ). The film thickness of the first layer 712 is, for example, 70 nm or more and 90 nm or less. The film thickness of the first layer 713 is, for example, 100 nm or more and 120 nm or less. On the other hand, each of the second layers 721, 722, and 723 is formed of, for example, amorphous silicon (a-Si). The refractive index of a-Si is 3.67 (see FIG. 9 ). The film thickness of the second layer 721 is, for example, 25 nm or more and 35 nm or less. The film thickness of the second layer 722 is, for example, 35 nm or more and 45 nm or less. The film thickness of the second layer 723 is, for example, 140 nm or more and 150 nm or less. The effective thickness of the optical filter 7 including the second layer 721, the first layer 712, the second layer 722, the first layer 713, and the second layer 723 is, for example, 400 nm or more and 420 nm or less. Here, the optical filter 7 may contain a-Si and SiO other than the above materials, and may be formed by laminating two or more selected from SiN, SiNO, and TiO shown in FIG.

[0045] A second photoelectric conversion unit 9 is disposed on the arrow Z direction side of the optical filter 7 with an insulator 6 interposed therebetween. A plurality of wirings 8 are disposed on the insulator 6. The insulator 6 is made of, for example, a multi-layer SiO ２ The wiring 8 is made of a conductive and transparent material, such as indium zinc oxide (IZO) or indium tin oxide (ITO).

[0046] (7) Configuration of Second Photoelectric Conversion Unit 9 As shown in Fig. 5 , the second photoelectric conversion unit 9 is disposed on the opposite side of the optical filter 7 from the first photoelectric conversion unit 3, with an insulator 6 interposed therebetween. The second photoelectric conversion unit 9 is disposed across a plurality of pixels 100. Here, the second photoelectric conversion unit 9 is disposed across all of the pixels 100. Note that, in the present technology, the second photoelectric conversion unit 9 may be disposed for each pixel 100, for each pixel unit, for each plurality of pixels 100, or for each plurality of pixel units.

[0047] The second photoelectric conversion section 9 includes a first electrode 91, an organic photoelectric conversion layer 94, and a second electrode 95. The second photoelectric conversion section 9 further includes an insulator 92 and a charge accumulation and transfer layer 93.

[0048] (7-1) Configuration of First Electrode 91 The first electrode 91 is disposed on the optical filter 7 side, and is formed on the surface of the insulator 6 on the arrow Z direction side. The first electrode 91 is used as a readout electrode or a lower electrode, and is disposed for each pixel 100. The first electrode 91 is connected to a predetermined circuit through wiring 8 and the like disposed within the insulator 6. Here, the wiring 8 disposed on the top layer of the insulator 6 is used as the first electrode 91. Like the wiring 8, the first electrode 91 is formed of IZO or ITO. The film thickness of the first electrode 91 is, for example, 10 nm or more and 100 nm or less.

[0049] (7-2) Structure of the Organic Photoelectric Conversion Layer 94 The organic photoelectric conversion layer 94 is disposed on the opposite side of the first electrode 91 from the optical filter 7, with an insulator 92 interposed therebetween. The insulator 92 is made of, for example, SiO ２ The insulator 92 is made of an insulating material such as silicon oxynitride (SiON), aluminum oxide (AlO), hafnium oxide (HfO), etc. The thickness of the insulator 92 is, for example, 1 nm or more and 30 nm or less.

[0050] The organic photoelectric conversion layer 94 uses an organic material. Examples of the organic material that can be used include p-type organic semiconductors, n-type organic semiconductors, stacked structures of p-type organic semiconductors and n-type organic semiconductors, and mixtures of p-type organic semiconductors and n-type organic semiconductors (bulk heterostructures). Examples of stacked structures include stacked structures of p-type organic semiconductors, mixtures of p-type organic semiconductors and n-type organic semiconductors (bulk heterostructures), and n-type organic semiconductors. Examples of stacked structures include stacked structures of p-type organic semiconductors and mixtures of p-type organic semiconductors and n-type organic semiconductors (bulk heterostructures). Examples of stacked structures include stacked structures of n-type organic semiconductors and mixtures of p-type organic semiconductors and n-type organic semiconductors (bulk heterostructures). The stacking order of the stacked structures can be changed as needed.

[0051] Examples of p-type organic semiconductors include naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, perylene derivatives, tetracene derivatives, pentacene derivatives, quinacridone derivatives, thiophene derivatives, thienothiophene derivatives, benzothiophene derivatives, benzothienobenzothiophene derivatives, triallylamine derivatives, carbazole derivatives, perylene derivatives, picene derivatives, chrysene derivatives, fluoranthene derivatives, phthalocyanine derivatives, subphthalocyanine derivatives, subporphyrazine derivatives, metal complexes having a heterocyclic compound as a ligand, polythiophene derivatives, polybenzothiadiazole derivatives, and polyfluorene derivatives.

[0052] Examples of n-type organic semiconductors include fullerenes and fullerene derivatives (e.g., fullerenes (higher fullerenes) such as C60, C70, and C74, endohedral fullerenes, etc.) or fullerene derivatives (e.g., fullerene fluorides, PCBM fullerene compounds, fullerene polymers, etc.), organic semiconductors with larger (deeper) HOMO and LUMO than p-type organic semiconductors, and transparent inorganic metal oxides. Specific examples of n-type organic semiconductors that can be used include heterocyclic compounds containing nitrogen atoms, oxygen atoms, and sulfur atoms. Examples of heterocyclic compounds include organic molecules, organometallic complexes, and subphthalocyanine derivatives having, as part of their molecular skeletons, pyridine derivatives, pyrazine derivatives, pyrimidine derivatives, triazine derivatives, quinoline derivatives, quinoxaline derivatives, isoquinoline derivatives, acridine derivatives, phenazine derivatives, phenanthroline derivatives, tetrazole derivatives, pyrazole derivatives, imidazole derivatives, thiazole derivatives, oxazole derivatives, imidazole derivatives, benzimidazole derivatives, benzotriazole derivatives, benzoxazole derivatives, carbazole derivatives, benzofuran derivatives, dibenzofuran derivatives, subporphyrazine derivatives, polyphenylenevinylene derivatives, polybenzothiadiazole derivatives, and polyfluorene derivatives.

[0053] Examples of groups contained in the fullerene derivative include halogen atoms; linear, branched, or cyclic alkyl or phenyl groups; groups having linear or condensed aromatic compounds; groups having halides; partial fluoroalkyl groups; perfluoroalkyl groups; silylalkyl groups; silylalkoxy groups; arylsilyl groups; arylsulfanyl groups; alkylsulfanyl groups; arylsulfonyl groups; alkylsulfonyl groups; arylsulfide groups; alkylsulfide groups; amino groups; alkylamino groups; arylamino groups; hydroxy groups; alkoxy groups; acylamino groups; acyloxy groups; carbonyl groups; carboxy groups; carboxamido groups; carboalkoxy groups; acyl groups; sulfonyl groups; cyano groups; nitro groups; groups having chalcogenides; phosphine groups; phosphonic groups; and derivatives thereof.

[0054] The thickness of the organic photoelectric conversion layer 94 made of an organic material is not limited, but is, for example, 1×10 －８ m or more 5×10 －７ The thickness of the organic photoelectric conversion layer 94 is preferably 2.5×10 －８ m or more 3×10 －７ More preferably, the thickness of the organic photoelectric conversion layer 94 is 2.5×10 －８ m or more 2×10 －７ More preferably, the thickness of the organic photoelectric conversion layer 94 is 1×10 －７ m or more 1.8×10 －７ m or less. Most organic semiconductors are classified into p-type and n-type. P-type means that they easily transport holes. N-type means that they easily transport electrons. Therefore, unlike inorganic semiconductors, they are not limited to being interpreted as having holes or electrons as the majority carriers of thermal excitation.

[0055] When the second photoelectric conversion unit 9 generates electric charges by photoelectric conversion from light of a green wavelength as the second wavelength range, the organic material that forms the organic photoelectric conversion layer 94 can be, for example, a rhodamine-based dye, a melacyanine-based dye, a quinacridone derivative, a subphthalocyanine-based dye (subphthalocyanine derivative), etc.

[0056] Furthermore, when the second photoelectric conversion unit 9 performs photoelectric conversion on light of a blue wavelength, for example, coumaric acid dye, tris-8-hydroxyquinolialuminum (Alq3), melacyanine dye, or the like can be used as the organic material forming the organic photoelectric conversion layer 94. When the second photoelectric conversion unit 9 performs photoelectric conversion on light of a red wavelength, for example, phthalocyanine dye, subphthalocyanine dye (subphthalocyanine derivative), or the like can be used as the organic material forming the organic photoelectric conversion layer 94.

[0057] Furthermore, the second photoelectric conversion section 9 may be constructed using an inorganic photoelectric conversion layer instead of the organic photoelectric conversion layer 94. In this case, crystalline Si, a-Si, microcrystalline Si, crystalline selenium, amorphous selenium, chalcopalite-based compounds, or III-V group compound semiconductors can be used as inorganic materials for constructing the inorganic photoelectric conversion layer. Examples of chalcopalite-based compounds include CIGS (CuInGaSe), CIS (CuInSe ２ ), CuInS ２ , CuAlS ２ , CuAlSe ２ , CuGaS ２ , CuGaSe ２ , AgAlS ２ , AgAlSe ２ , AgInS ２ or AgInSe ２ III-V group compound semiconductors include GaAs, InP, AlGaAs, InGaP, AlGaInP, InGaAsP, etc. Furthermore, III-V group compound semiconductors include CdSe, CdS, In2Se ３ , In ２ S ３ , Bi ２ Se ３ , Bi ２ S ３ , ZnSe, ZnS, PbSe, PbS, etc. In addition, quantum dots made of these materials can be used in the organic photoelectric conversion layer 94.

[0058] Although not shown, the organic photoelectric conversion layer 94 can be configured with a laminated structure of a lower semiconductor layer and an upper photoelectric conversion layer. By providing the lower semiconductor layer in the organic photoelectric conversion layer 94, recombination during charge accumulation can be prevented in the organic photoelectric conversion layer 94, and the efficiency of charge transfer to the charge accumulation and transfer layer 93 can be improved. Furthermore, the generation of dark current can be effectively suppressed.

[0059] The upper photoelectric conversion layer can be made of any material selected from the various materials used to form the organic photoelectric conversion layer 94 described above.

[0060] On the other hand, it is preferable to use a material for the lower semiconductor layer that has a large band gap value (for example, a band gap value of 3.0 eV or more) and a higher mobility than the material forming the organic photoelectric conversion layer 94. Specifically, it is possible to use an oxide semiconductor material such as IGZO, or an organic semiconductor material such as a transition metal dichalcogenide, silicon carbide, diamond, graphene, carbon nanotube, condensed polycyclic hydrocarbon compound, or condensed heterocyclic compound. Furthermore, when the charges to be stored are electrons, it is possible to use a material for the lower semiconductor layer that has an ionization potential greater than the ionization potential of the material forming the organic photoelectric conversion layer 94.

[0061] On the other hand, when the charges to be accumulated are holes, a material having an electron affinity smaller than that of the material forming the organic photoelectric conversion layer 94 can be used as the lower semiconductor layer. In addition, the impurity concentration of the material forming the lower semiconductor layer is, for example, 1×10 １８ cm －３ The lower semiconductor layer may have a single-layer structure or a multi-layer structure. The material forming the lower semiconductor layer may be different between the region corresponding to the first electrode 91 and the region corresponding to the floating diffusion.

[0062] (7-3) Configuration of the Second Electrode 95 The second electrode 95 is disposed on the opposite side of the organic photoelectric conversion layer 94 from the first electrode 91. The second electrode 95 is used as a common electrode or an upper electrode and is disposed across multiple pixels 100. The second electrode 95 is connected to a predetermined circuit on the circuit board 21 via wiring or the like (not shown). A fixed potential is supplied to the second electrode 95. Like the first electrode 91, the second electrode 95 is formed of an electrode material that is conductive and transparent. The second electrode 95 is formed of an electrode material such as ITO or IZO. Alternatively, the second electrode 95 may be formed of one or more electrode materials selected from IGZO, IAZO, ITZO, IGSiO, ZnO, AZO, and GZO. The film thickness of the second electrode 95 is, for example, 10 nm to 100 nm.

[0063] (7-4) Structure of Charge Accumulation and Transfer Layer 93 The charge accumulation and transfer layer 93 is disposed between the first electrode 91 and the organic photoelectric conversion layer 94. To explain in detail, the organic photoelectric conversion layer 94 is disposed on the first electrode 91 with an insulator 92 interposed therebetween. In this example, the charge accumulation and transfer layer 93 is disposed across a plurality of pixels 100. The insulator 92 is used as a gate insulating film. The insulator 92 is made of, for example, SiO ２ , SiON, AlO, and HfO are used. The charge accumulation and transfer layer 93 accumulates charges generated by photoelectric conversion of light in the second photoelectric conversion unit 9. The charge accumulation and transfer layer 93 is connected to the through wiring 52, and is connected to the pixel circuit PC2 (see FIG. 2) via the through wiring 52, the through wiring 42, etc. The through wiring 52, the through wiring 42, etc. form a floating diffusion FD2. In other words, the charges accumulated in the charge accumulation and transfer layer 93 are transferred to the pixel circuit PC2 via the floating diffusion FD2.

[0064] The charge accumulation and transfer layer 93 is formed of an oxide semiconductor, which is a transparent semiconductor. For example, IGZO containing indium (In), gallium (Ga), zinc (Zn), and oxygen (O) is used for the charge accumulation and transfer layer 93. IAZO containing In, aluminum (Al), Zn, and O, or ITZO containing In, tin (Sn), Zn, and O, can also be used for the charge accumulation and transfer layer 93. Furthermore, one or more semiconductor materials selected from IGSiO, ZnO, AZO, GZO, ITO, and IZO can also be used for the charge accumulation and transfer layer 93. The thickness of the charge accumulation and transfer layer 93 is, for example, 10 nm to 100 nm.

[0065] (8) Configuration of the Through Wiring 52 and the Through Wiring 42 As shown in FIGS. 4 and 5 , the through wiring 52 is formed to penetrate the partition 110 in the direction of arrow Z in side view. Furthermore, the through wirings 52 are arranged at regular intervals in the extension direction of the partition 110 in plan view. To explain in detail, in plan view, the through wirings 52 are arranged at regular intervals in the partition 110 extending in the direction of arrow X in the partition 110. Furthermore, the through wirings 52 are arranged at regular intervals in the direction of arrow Y in the partition 110 extending in the direction of arrow Y. The partition 110 will be described in detail later. The through wiring 52 is formed to contain one or more metals selected from W, Al, and copper (Cu).

[0066] Furthermore, in a side view, the area of ​​the first end face S1 of the through wiring 52 on the first photoelectric conversion unit 3 side is smaller than the area of ​​the second end face S2 of the through wiring 52 on the second photoelectric conversion unit 9 side. That is, as shown in FIG. 5 , the cross-sectional shape of the through wiring 52 is formed into an inverted trapezoid. With the through wiring 52 configured in this manner, it is possible to reduce the connection area with the through wiring 42 and reduce the area occupied by the through wiring 42. In other words, it is possible to increase the area occupied by the first photoelectric conversion unit 3 and improve the amount of light received by the first photoelectric conversion unit 3.

[0067] The through wiring 42 is formed to penetrate the base 2 in the direction of the arrow Z in a side view, and is electrically connected to the through wiring 52. Furthermore, the through wiring 42 overlaps the through wiring 52 in a plan view, and is disposed at a fixed interval, similar to the through wiring 52. The through wiring 42 is connected to a predetermined circuit such as the pixel circuit PC2. The through wiring 42 is formed of, for example, the same metal as the through wiring 52.

[0068] 5, the optical filter 12 is disposed on the opposite side of the second electrode 95 from the organic photoelectric conversion layer 94, with the sealing layer 11 interposed therebetween. Here, the sealing layer 11 is formed of one or more sealing materials selected from, for example, AlO, SiN, and SiON. The thickness of the sealing layer 11 is, for example, 5 nm or more and 1000 nm or less.

[0069] The optical filter 12 includes a red filter 12R that transmits light in the red wavelength range, a green filter 12G that transmits light in the green wavelength range, and a blue filter 12B that transmits light in the blue wavelength range as the second wavelength range. The red filter 12R transmits light having a wavelength of, for example, 585 nm or more and 780 nm or less. The green filter 12G transmits light having a wavelength of, for example, 500 nm or more and 585 nm or less. The blue filter 12B transmits light having a wavelength of, for example, 400 nm or more and 500 nm or less.

[0070] The optical filter 12 is formed, for example, by adding a pigment to a resin material that imparts color to the material. To explain in more detail, organic resin materials such as phthalocyanine derivatives can be practically used as the resin.

[0071] (10) Configuration of Optical Lens 13 As shown in Fig. 5, the optical lens 13 is disposed on the opposite side of the optical filter 12 from the second photoelectric conversion unit 9. Although not shown in a plan view, the optical lens 13 is formed in a circular shape for each pixel 100. In addition, in a side view, the optical lens 13 is formed in a curved shape that curves in the direction of arrow Z and collects incident light L. The optical lens 13 is a so-called on-chip lens, and is formed for each pixel 100 or integrally across multiple pixels 100. The optical lens 13 is formed, for example, from a transparent resin material.

[0072] Although not shown in the figure, an anti-reflection layer is formed on the surface of the optical lens 13. The anti-reflection layer may be made of, for example, SiO ２ It is formed by

[0073] (11) Configuration of Partition Wall 110 Fig. 7A shows an example of a specific longitudinal cross-sectional configuration of the partition wall 110 and the optical filter 7. As shown in Figs. 4, 5, and 7A, the partition wall 110 is disposed between the first photoelectric conversion section 3 and the second photoelectric conversion section 9, and is disposed so as to surround the periphery of the first photoelectric conversion section 3 in a plan view. The pixels 100 are constructed in the region surrounded by the partition wall 110. This will be described in detail.

[0074] In side view, the partition 110 is formed in a trapezoidal shape in which a width dimension W2 of a second surface (top surface) 110A on the second photoelectric conversion section 9 side is smaller than a width dimension W1 of a first surface (bottom surface) 110B on the first photoelectric conversion section 3 side. In other words, the partition 110 has a sidewall 110S that is inclined with respect to the surface of the base 2. The sidewall 110S has an inclination angle θ with respect to the first surface 110B of the partition 110. The optimal inclination angle θ will be described in detail later.

[0075] The optical filter 7 described above is disposed from the surface of the base 2 along the side wall 110S of the partition 110 in the region of the pixel 100 whose periphery is surrounded by the partition 110. The surface of the base 2 corresponds to the surface of the first photoelectric conversion section 3. At least the second layer 721, the first layer 712, the second layer 722, the first layer 713, and the second layer 723 are stacked in the direction perpendicular to the surface of the base 2, thereby forming the optical filter 7. In other words, the plane direction of the second layer 721 etc. is parallel to the surface of the base 2.

[0076] The optical filter 7 disposed along the side wall 110S of the partition 110 is formed by stacking at least the second layer 721, the first layer 712, the second layer 722, the first layer 713, and the second layer 723 in a direction perpendicular to the side wall 110S. In other words, the surface direction of the second layer 721, etc. is parallel to the side wall 110S. The optical filter 7 disposed on the surface of the base 2 and the optical filter 7 disposed on the side wall 110S of the partition 110 are each formed continuously without any joints.

[0077] At least the portion of the partition 110 that contacts the optical filter 7, that is, at least the side wall 110S, is made of a material having a lower refractive index than the optical filter 7. In the first embodiment, the entire partition 110 except for the through-wire 52 is made of SiO 2 , which has a lower refractive index than the second layer (a-Si) 721 of the optical filter 7. ２ The partition wall 110 may be formed by including one or more selected from silicon nitride (SiN), SiON, and titanium oxide (TiO) as long as the refractive index condition is satisfied.

[0078] FIG. 7B shows an example of a specific longitudinal cross-sectional configuration of the partition 110CE and the optical filter 7CE of a photodetector according to a comparative example. FIG. 8 shows an example of a graph illustrating oblique incidence characteristics. In the photodetector according to the comparative example, the side surface of the optical filter 7CE contacts the side wall of the partition 110CE, and the optical filter 7CE is disposed surrounded by the partition 110CE. Like the optical filter 7, the optical filter 7CE is formed by alternately stacking first layers 711, 712, 713, and 714 having a first refractive index and second layers 721, 722, and 723 having a second refractive index. Here, the sidewalls 110CES of the partition 110CE are formed vertically with an inclination angle θ of 90 degrees. The first layers 711 and the like of the optical filter 7CE contact the sidewalls 110CES.

[0079] In Fig. 8, the horizontal axis represents wavelength [nm]. The vertical axis represents reflectance or transmittance [%]. In the first embodiment, the first photoelectric conversion unit 3 receives infrared light. The wavelength band of the infrared light shown in Fig. 8 is approximately 700 nm or more and 1000 nm or less. The angle of incidence θin of the incident light L on the optical filter 7CE is set to 30 degrees.

[0080] 8, in the photodetector according to the comparative example, the layer structure of the optical filter 7CE through which the incident light L passes is different in the vicinity of the partition 110CE. Therefore, as shown in data Dc1, the reflectance of infrared light at the sidewall 110CES of the partition 110CE is degraded in the case of oblique incidence. Furthermore, as shown in data Dc2, the transmittance of infrared light is degraded in the vicinity of the partition 110CE in the case of oblique incidence.

[0081] In contrast to the photodetector according to the comparative example, in the photodetector 1 according to the first embodiment, the optical filter 7 is disposed along the side wall 110S of the partition 110. That is, the layer configuration of the optical filter 7 through which the incident light L passes is the same on both the surface of the base 2 and the surface of the side wall 110S. Therefore, as shown in data D1, the reflectance of infrared light at the side wall 110S of the partition 110 is improved in the case of oblique incidence. Furthermore, as shown in data D2, the transmittance of infrared light near the partition 110 is improved in the case of oblique incidence.

[0082] 9 is a table illustrating the relationship between the refractive index of each material, the critical angle, and the inclination angle of the sidewall 110S of the partition wall 110, among the various materials forming the partition wall 110. As shown in FIG. 9, the refractive index of the a-Si forming the second layer 721 of the optical filter 7 is 3.67. In contrast, the refractive index of the SiO ２ The refractive index of SiN, which is another material that can form the partition wall 110, is 2.00, the refractive index of SiON is 2.00, and the refractive index of TiO is 2.4.

[0083] Here, the total reflection condition at the side wall 110S of the partition 110 is calculated for oblique incidence of incident light L. In other words, the reflection condition is calculated such that all of the incident light L is reflected by the side wall 110S and received by the first photoelectric conversion unit 3. A-Si is used for the second layer 721 of the optical filter 7, and SiO is used for the partition 110. ２ When is used, the critical angle θcr is calculated by the following formula: sin θcr=n ｓｉｏ / n ｓｉ where n is the refractive index. In this case, the critical angle θcr is 23.3 degrees, and the inclination angle θ of the side wall 110S of the partition 110 is 54 degrees. That is, if the inclination angle θ of the side wall 110S is 54 degrees or more, the total reflection condition is satisfied, and the incident light L reflected by the side wall 110S can be efficiently collected on the first photoelectric conversion part 3.

[0084] Similarly, when SiN is used for the partition 110, the critical angle θcr is 33.0 degrees, and the inclination angle θ of the sidewall 110S is 63 degrees. When SiON is used for the partition 110, the critical angle θcr is 33.0 degrees, and the inclination angle θ of the sidewall 110S is 63 degrees. When TiO is used for the partition 110, the critical angle θcr is 40.8 degrees, and the inclination angle θ of the sidewall 110S is 71 degrees. Therefore, in the first embodiment, it is preferable that the inclination angle θ of the sidewall 110S be set to be equal to or greater than 50 degrees and equal to or less than 90 degrees.

[0085] [Manufacturing Method of Photodetector 1] Next, a method of manufacturing the above-described photodetector 1 will be described with reference to Fig. 10 to Fig. 18. Fig. 10 to Fig. 18 show an example of a series of cross-sectional processes illustrating the manufacturing method of the photodetector 1 according to the first embodiment.

[0086] First, a base 2 is prepared (see FIG. 10). The base 2 is made of, for example, single crystal Si. Subsequently, a first photoelectric conversion section 3 is formed on the base 2 in the region where the pixel 100 is to be formed (see FIG. 10). Next, an insulator 700 is formed on the surface of the first photoelectric conversion section 3, and subsequently a first layer 711 that will become a part of the optical filter 7 is formed (see FIG. 10). The first layer 711 is made of, for example, SiO ２ The first layer 711 is formed by chemical vapor deposition (CVD).

[0087] As shown in FIG. 10, through-wirings 42 are formed in the base 2 between the regions where the pixels 100 are formed.

[0088] 11, a barrier rib forming layer 110F is formed on the entire surface of the base 2. The barrier rib forming layer 110F is made of, for example, SiO ２ The partition wall forming layer 110F is formed by using the CVD method.

[0089] 12, the partition-forming layer 110F is patterned, and the partition-forming layer 110F is removed in the formation region of the pixel 100. When the partition-forming layer 110F is patterned, the partition 110 is formed from the partition-forming layer 110F remaining between the formation regions of the pixel 100. The partition 110 has an inclined sidewall 110S. Photolithography and etching techniques are used to pattern the partition-forming layer 110F. For example, dry etching is used as the etching technique.

[0090] 13, a second layer 721 and a first layer 712, which will become part of the optical filter 7, are sequentially formed on the entire surface of the base 2, including the surface of the base 2 and the surface of the side wall 110S of the partition wall 110. The second layer 721 is made of, for example, a-Si. The second layer 721 is formed by using a CVD method. The first layer 712 is made of, for example, SiO ２ The first layer 712 is formed by using a CVD method.

[0091] 14, a second layer 722, which will become a part of the optical filter 7, is then formed over the entire surface of the base 2. The second layer 722 is made of, for example, a-Si. The second layer 722 is deposited using a CVD method.

[0092] 15, a first layer 713 and a second layer 723, which will become part of the optical filter 7, are then formed in sequence over the entire surface of the substrate 2. The first layer 713 is made of, for example, SiO ２ The first layer 713 is formed by using the CVD method. The second layer 723 is formed by using, for example, a-Si. The second layer 723 is formed by using the CVD method.

[0093] Subsequently, a first layer 714 that will become a part of the optical filter 7 is formed over the entire surface of the substrate 2. The first layer 714 is made of, for example, SiO ２The first layer 714 is formed by CVD. As shown in FIG. 16 , a planarization process is performed until the second surface 110A of the partition wall 110 is exposed, and excess first layer 714 and the like are removed. This planarization process forms the optical filter 7 arranged from the surface of the base 2 along the side wall 110S of the partition wall 110. The planarization process uses an etching technique or a chemical mechanical polishing (CMP) technique.

[0094] As shown in Fig. 17, a through hole 110H is formed in the partition wall 110. The through hole 110H is formed using photolithography and etching techniques. As shown in Fig. 18, a through wiring 52 is formed in the through hole 110H. The through wiring 52 is formed by forming a metal film over the entire surface of the base 2 using a sputtering method or a CVD method, and then removing excess metal. The metal is removed by, for example, a CMP technique.

[0095] Thereafter, the second photoelectric conversion unit 9, the optical filter 12, and the optical lens 13 are formed in sequence, completing the photodetector 1 shown in Fig. 5. Through this series of manufacturing steps, the method for manufacturing the photodetector 1 according to the first embodiment is completed.

[0096] [Operation and Effect] As shown in Figures 4, 5, 6, and 7A, the photodetector 1 according to the first embodiment includes a first photoelectric conversion unit 3, a second photoelectric conversion unit 9, a partition wall 110, and an optical filter 7. The first photoelectric conversion unit 3 is disposed on the base 2 and converts light in a first wavelength range into electric charges. The second photoelectric conversion unit 9 faces the first photoelectric conversion unit 3 and is disposed at a distance from the first photoelectric conversion unit 3. The second photoelectric conversion unit 9 converts light in a second wavelength range different from the first wavelength range into electric charges. The partition wall 110 is disposed between the first photoelectric conversion unit 3 and the second photoelectric conversion unit 9, surrounding the periphery of the first photoelectric conversion unit 3. The partition wall 110 has a sidewall 110S that is inclined with respect to the surface of the base 2. The optical filter 7 is disposed between the first photoelectric conversion section 3 and the second photoelectric conversion section 9, surrounded by the partition wall 110. The optical filter 7 is formed by stacking, from the first photoelectric conversion section 3 toward the second photoelectric conversion section 9, first layers 712, 713, and 714 having a first refractive index, and second layers 721, 722, and 723 having a second refractive index different from the first refractive index. The optical filter 7 selectively transmits at least light in the first wavelength range. Here, the optical filter 7 is a multilayer interference filter. In the photodetector 1 configured in this manner, the side wall 110S of the partition wall 110 is inclined, and therefore the optical filter 7 is disposed from the surface of the base 2 along the side wall 110S of the partition wall 110. In other words, the surface directions of the first layer 712, second layer 721, etc. of the optical filter 7 are arranged parallel to the side wall 110S of the partition 110, similar to the surface of the base 2. Therefore, even if oblique incidence occurs near the partition 110, the layer configuration of the optical filter 7 does not change, and the original characteristics of the optical filter 7 can be maintained. Therefore, the optical filter 7 of the photodetector 1 according to the first embodiment can selectively transmit even obliquely incident infrared light and allow it to be effectively received by the first photoelectric conversion unit 3, thereby generating a high-resolution infrared light image.

[0097] 5 and 7A , in the photodetector 1, at least the portion of the partition 110 that contacts the optical filter 7 is made of a material having a lower refractive index than that of the optical filter 7. According to the photodetector 1 configured in this manner, the boundary surface between the optical filter 7 and the side wall 110S of the partition 110 can be formed as the opposite surface to the incident light L. Therefore, the obliquely incident infrared light can be effectively received by the first photoelectric conversion unit 3, and a high-resolution infrared light image can be generated.

[0098] 5 and 7A , in the photodetector 1, the partition 110 is formed in a trapezoidal shape in side view, in which the width dimension W2 of the second surface 110A on the second photoelectric conversion unit 9 side is smaller than the width dimension W1 of the first surface 110B on the first photoelectric conversion unit 3 side. According to the photodetector 1 configured in this manner, the optical filter 7 can be disposed along the side wall 110S of the partition 110 from the surface of the base 2. In addition, the boundary surface between the optical filter 7 and the side wall 110S of the partition 110 can be formed as the opposite surface to the incident light L.

[0099] 5 and 7A , in the photodetector 1, a through wiring 52 made of metal is disposed inside the partition 110. The through wiring 52 is connected to the second photoelectric conversion unit 9 and also to the through wiring 42. In a side view, the area of ​​a first end face S1 of the through wiring 52 disposed inside the partition 110 on the side of the first photoelectric conversion unit 3 is smaller than the area of ​​a second end face S2 of the through wiring 52 on the side of the second photoelectric conversion unit 9. According to the photodetector 1 configured in this manner, the connection area between the through wiring 52 and the through wiring 42 can be reduced, and the area occupied by the through wiring 42 can be reduced. In other words, the area occupied by the first photoelectric conversion unit 3 can be increased, and the amount of light received by the first photoelectric conversion unit 3 can be improved.

[0100] 19 will be used to describe a photodetector 1 according to a second embodiment of the present disclosure. The second embodiment describes an example in which the configuration of the partitions 110 disposed around the pixels 100 in the photodetector 1 according to the first embodiment is changed. Note that in the second embodiment and subsequent embodiments, components that are the same as or substantially the same as components of the photodetector 1 and its manufacturing method according to the first embodiment are denoted by the same reference numerals, and redundant description will be omitted.

[0101] [Configuration of Photodetector 1] FIG. 19 shows an example of the planar configuration of the pixel 100 of the photodetector 1 according to the second embodiment.

[0102] 19 , in the photodetector 1 according to the second embodiment, a through-wire 52 is disposed at each of the four corners of a pixel 100 in a plan view. A light-shielding plate 523 is disposed between the through-wires 52. In other words, the light-shielding plate 523 extends in the direction of arrow X or arrow Y along each side of the pixel 100. The light-shielding plate 523 has the same vertical cross-sectional shape as the through-wire 52 and is made of the same metal as the through-wire 52. The light-shielding plate 523 is connected to a fixed power supply such as a ground power supply.

[0103] The components other than those described above are the same or substantially the same as the components of the photodetector 1 according to the first embodiment.

[0104] [Operational Effects] The photodetector 1 according to the second embodiment can provide the same operational effects as those provided by the photodetector 1 according to the first embodiment.

[0105] 19 , in the photodetector 1, a light-shielding plate 523 is disposed on the partition wall 110. According to the photodetector 1 configured in this manner, the light-shielding plate 53 can effectively suppress or prevent leakage of incident light L between adjacent pixels 100. Therefore, in the photodetector 1, it is possible to effectively suppress or prevent color mixing.

[0106] 20 to 28, a photodetector 1 according to a third embodiment of the present disclosure will be described. The third embodiment describes an example in which the configuration of the partitions 110 disposed around the pixels 100 in the photodetector 1 according to the first embodiment is changed.

[0107] [Configuration of Photodetector 1] FIG. 20 shows an example of a vertical cross-sectional configuration of a pixel 100 of a photodetector 1 according to the third embodiment.

[0108] As shown in Figure 20, in the photodetector 1 of the third embodiment, when viewed from the side, the partition 110 is formed in an inverted trapezoid shape in which the width dimension W2 of the second surface 110A on the second photoelectric conversion section 9 side is larger than the width dimension W1 of the first surface 110B on the first photoelectric conversion section 3 side.

[0109] The optical filter 7 is disposed within a region surrounded by the partition wall 110. In the third embodiment, the end face of the optical filter 7 is formed in contact with the side wall 110S of the partition wall 110. The first layer 712 and the second layer 721 of the optical filter 7, which are closer to the first photoelectric conversion unit 3, extend further outward than the first layer 713 and the second layer 723, which are closer to the second photoelectric conversion unit 9.

[0110] In other words, by forming the cross-sectional shape of the partition 110 into an inverted trapezoidal shape, the occupied area (opening area) of the first photoelectric conversion section 3 can be increased while the optical filter 7 can be extended to the periphery of the first photoelectric conversion section 3 while maintaining the layer structure.

[0111] The components other than those described above are the same or substantially the same as the components of the photodetector 1 according to the first embodiment.

[0112] 21 to 28 show an example of a series of cross-sectional processes for explaining the method for manufacturing the photodetector 1 according to the third embodiment.

[0113] 10 of the manufacturing method of the photodetector 1 according to the first embodiment (hereinafter simply referred to as the "first manufacturing method"), the base 2 is prepared, and a first layer 711 that will become a part of the optical filter 7 is formed (see FIG. 21). Subsequently, as shown in FIG. 21, through wirings 42 are formed in the base 2 between the formation regions of the pixels 100.

[0114] 22 , a second layer 721, a first layer 712, a second layer 722, a first layer 713, a second layer 723, and a first layer 714, which will become parts of the optical filter 7, are formed in this order over the entire surface of the base 2. In this way, the optical filter 7 is completed.

[0115] 23, an opening 7H is formed in the optical filter 7 between the regions where the pixels 100 are formed. The opening 7H is formed by photolithography and etching. As the etching technique, for example, dry etching is used.

[0116] 24, a partition wall forming layer 110F is formed over the entire surface of the optical filter 7. The partition wall forming layer 110F is formed of, for example, SiO 2 , as in the first manufacturing method. ２ The partition wall forming layer 110F is formed by using the CVD method. The partition wall forming layer 110F is also embedded in the opening 7H formed beforehand.

[0117] 25, excess partition-forming layer 110F is removed until the surface of optical filter 7 is exposed. As a result, partitions 110 are formed from partition-forming layer 110F and embedded in openings 7H. Etching or CMP is used to remove partition-forming layer 110F.

[0118] 17 of the first manufacturing method, as shown in Fig. 26, through holes 110H are formed in the partition wall 110. The through holes 110H are formed using photolithography and etching techniques.

[0119] 27 , a metal layer 52A is formed on the entire surface including the surfaces of the optical filter 7 and the partition wall 110. The metal layer 52A is made of, for example, W. The metal layer 52A is formed by sputtering or CVD.

[0120] 28, the excess metal 52A is removed by, for example, CMP, to form the through-wiring 52 from the metal 52A in the through-hole 110H.

[0121] Thereafter, the second photoelectric conversion unit 9, the optical filter 12, and the optical lens 13 are formed in sequence, thereby completing the photodetector 1 shown in Fig. 20. Through this series of manufacturing steps, the method for manufacturing the photodetector 1 according to the third embodiment is completed.

[0122] [Operational Effects] The photodetector 1 according to the third embodiment can provide the same operational effects as those provided by the photodetector 1 according to the first embodiment.

[0123] 20 , in the photodetector 1, the partition 110 is formed in an inverted trapezoidal shape. According to the photodetector 1 configured in this manner, the optical filter 7 can be extended to the periphery of the first photoelectric conversion unit 3 while maintaining the layer structure and expanding the area occupied by the first photoelectric conversion unit 3. Therefore, the optical filter 7 of the photodetector 1 according to the third embodiment can selectively transmit even obliquely incident infrared light, particularly around the pixel 100, and allow the first photoelectric conversion unit 3 to effectively receive the light, thereby generating a high-resolution infrared light image.

[0124] Furthermore, because the partition 110 is formed in an inverted trapezoidal shape, obliquely incident infrared light can also be easily collected on the first photoelectric conversion unit 3. This makes it possible to improve the amount of light received by the first photoelectric conversion unit 3, thereby generating a high-resolution infrared light image.

[0125] 29 to 40, a photodetector 1 according to a fourth embodiment of the present disclosure will be described. The fourth embodiment describes an example in which the configuration of the optical filter 7 in the photodetector 1 according to the first embodiment is changed.

[0126] [Configuration of Photodetector 1] FIG. 29 shows an example of a vertical cross-sectional configuration of a pixel 100 of a photodetector 1 according to the fourth embodiment.

[0127] 29 , in the photodetector 1 according to the fourth embodiment, the cross-sectional shape of the optical filter 7 in a side view is formed into a lens shape that curves and protrudes toward the first photoelectric conversion unit 3. In the optical filter 7, each layer, such as the first layer 712, is also formed into a lens shape that protrudes in the same direction.

[0128] The partition wall 110 has an inclined sidewall 110S, similar to the partition wall 110 of the photodetector 1 according to the first embodiment. The end face portion of the optical filter 7 is disposed along this sidewall 110S.

[0129] The components other than those described above are the same or substantially the same as the components of the photodetector 1 according to the first embodiment.

[0130] 30 to 40, a method for manufacturing the above-described photodetector 1 will be described. Figures 30 to 40 show an example of a series of cross-sectional processes for explaining the method for manufacturing the photodetector 1 according to the fourth embodiment.

[0131] 10 of the first manufacturing method, the base 2 is prepared, and a first layer 711 that will become a part of the optical filter 7 is formed (see FIG. 30 ). Subsequently, as shown in FIG. 30 , through wirings 42 are formed in the base 2 between the formation regions of the pixels 100.

[0132] 31 , a partition-forming layer 110F1 that will become part of the partition 110 is formed over the entire surface of the base 2. Here, since the partition-forming layer 110F1 is formed as part of the partition 110, it has a smaller refractive index than the second layer 721 of the optical filter 7, in particular, and is made of a material that has a different polishing rate than the first layer 711 during dishing processing.

[0133] 32, the partition-forming layer 110F1 is patterned, and a part of the partition 110 is formed from the partition-forming layer 110F1. Photolithography and etching techniques are used for the patterning.

[0134] 33, the first layer 711 of the optical filter 7 is formed again over the entire surface of the base 2. The first layer 711 is formed so as to cover a part of the partition wall 110.

[0135] As shown in FIG. 34, the first layer 711 is subjected to dishing processing, and the cross-sectional shape of the surface of the first layer 711 is formed into a lens shape that curves and protrudes toward the first photoelectric conversion section 3 side.

[0136] 35, a second layer 721, which will become a part of the optical filter 7, is formed on the surface of the first layer 711. Subsequently, as shown in Fig. 36, a first layer 712, a second layer 722, a first layer 713, a second layer 723, and a first layer 714 are sequentially formed on the surface of the second layer 721. This completes the optical filter 7. The cross-sectional shape of the optical filter 7 is formed into a lens shape.

[0137] 23 of the manufacturing method of the photodetector 1 according to the third embodiment (hereinafter simply referred to as the "third manufacturing method"), an opening 7H is formed in the optical filter 7 between the formation regions of the pixel 100, as shown in FIG. 37. Photolithography and etching techniques are used to form the opening 7H. For example, dry etching is used as the etching technique. A part of the partition 110 (partition forming layer 110F1) is exposed in the opening 7H.

[0138] 24 of the third manufacturing method, as shown in Fig. 38, a partition wall forming layer 110F is formed over the entire surface of the optical filter 7. As in the first manufacturing method, the partition wall forming layer 110F is made of, for example, SiO ２ The partition wall forming layer 110F is formed by using the CVD method. The partition wall forming layer 110F is also embedded in the opening 7H formed beforehand.

[0139] 25 of the third manufacturing method, as shown in FIG. 39, excess partition-forming layer 110F is removed until the surface of the optical filter 7 is exposed. As a result, partitions 110 are formed from the partition-forming layer 110F and embedded in the openings 7H. Etching or CMP technology is used to remove the partition-forming layer 110F. Here, the partitions 110 are formed by the partition-forming layer 110F and the partition-forming layer 110F1.

[0140] As in the steps shown in FIGS. 26 to 28 of the third manufacturing method, as shown in FIG. 40, through holes 110H are formed in the partition wall 110, and through wirings 52 are formed in the through holes 110H.

[0141] Thereafter, the second photoelectric conversion unit 9, the optical filter 12, and the optical lens 13 are formed in sequence, completing the photodetector 1 shown in Fig. 29. Through this series of manufacturing steps, the method for manufacturing the photodetector 1 according to the fourth embodiment is completed.

[0142] [Operational Effects] The photodetector 1 according to the fourth embodiment can provide the same operational effects as those provided by the photodetector 1 according to the first embodiment.

[0143] 29 , in the photodetector 1, the optical filter 7 is formed in a lens shape. In the photodetector 1 configured in this manner, the optical filter 7 is disposed from the surface of the base 2 along the side wall 110S of the partition 110. Therefore, even if oblique incidence occurs near the partition 110, the layer structure of the optical filter 7 does not change much, and the original characteristics of the optical filter 7 can be maintained. Therefore, the optical filter 7 of the photodetector 1 according to the fourth embodiment can selectively transmit even obliquely incident infrared light and allow it to be effectively received by the first photoelectric conversion unit 3, thereby generating a high-resolution infrared light image.

[0144] Furthermore, since the optical filter 7 is formed in a lens shape, the incident light L can be condensed and effectively received by the first photoelectric conversion unit 3. Similarly, the photodetector 1 can generate a high-resolution infrared light image.

[0145] 41 to 42, a photodetector 1 according to a fifth embodiment of the present disclosure will be described. The fifth embodiment describes an example in which the configuration of the optical filter 7 in the photodetector 1 according to the first embodiment is changed.

[0146] [Configuration of Photodetector 1] Fig. 41 shows an example of the planar configuration of a pixel 100 of a photodetector 1 according to the fifth embodiment. Fig. 42 shows an example of the longitudinal cross-sectional configuration of the pixel 100 shown in Fig. 41. As shown in Fig. 41 and Fig. 42, the photodetector 1 according to the fifth embodiment uses a surface plasmon resonance filter as the optical filter 7.

[0147] More specifically, the optical filter 7 is disposed surrounded by the partition walls 110. The optical filter 7 is formed by laminating a first layer 731, a second layer 74, a second layer 75, and the first layer 731. The first layer 731 and the first layer 732 are opposed to each other in the thickness direction and are spaced apart from each other. The first layer 731 and the first layer 732 are each made of a metal. For example, Al is used for the first layer 731 and the first layer 732. The second layer 74 and the second layer 75 are each disposed between the first layer 731 and the first layer 732. The second layer 75 is embedded in through holes 74H regularly arranged in the second layer 74. The second layer 74 and the second layer 75 are each made of a dielectric material. For example, TiO is used for the second layer 74. For example, SiO is used for the second layer 75. ２ is used.

[0148] The optical filter 7, like the optical filter 7 of the photodetector 1 according to the first embodiment, selectively transmits at least incident light L in the first wavelength range (here, infrared light).

[0149] The components other than those described above are the same or substantially the same as the components of the photodetector 1 according to the first embodiment.

[0150] [Effects] The photodetector 1 according to the fifth embodiment can achieve the same effects as those achieved by the photodetector 1 according to the first embodiment. In particular, in the photodetector 1, the partition 110 has an inclined sidewall 110S, which makes it easier for obliquely incident infrared light to be collected on the first photoelectric conversion unit 3. This can improve the amount of light received by the first photoelectric conversion unit 3, making it possible to generate a high-resolution infrared light image.

[0151] 6. Sixth Embodiment A photodetector 1 according to a sixth embodiment of the present disclosure will be described with reference to Fig. 43. In the sixth embodiment, an example will be described in which the configurations of the pixels 100 and the optical filters 7 in the photodetector 1 according to the first embodiment are changed.

[0152] [Configuration of Photodetector 1] FIG. 43 shows an example of a vertical cross-sectional configuration of a pixel 100 of a photodetector 1 according to the sixth embodiment.

[0153] 43 , in the photodetector 1 according to the sixth embodiment, of the plurality of pixels 100 arranged in a basic manner, one pixel 100 is configured by stacking a first photoelectric conversion unit 3 that receives red light R and a second photoelectric conversion unit 9 that receives green light G. And another pixel 100 is configured by stacking a first photoelectric conversion unit 3 that receives blue light B and a second photoelectric conversion unit 9 that receives green light G.

[0154] The first photoelectric conversion unit 3 is formed of, for example, a semiconductor photodiode, similar to the first photoelectric conversion unit 3 of the photodetector 1 according to the first embodiment. The second photoelectric conversion unit 9 is formed of, for example, an organic photodiode, similar to the second photoelectric conversion unit 9 of the photodetector 1 according to the first embodiment.

[0155] The optical filter 7 and the partition 110 have substantially the same configuration as the optical filter 7 and the partition 110 of the photodetector 1 according to the first embodiment. However, the transmission wavelength ranges of red light R and blue light B are different. For this reason, in the sixth embodiment, the optical filter 7 disposed in the first photoelectric conversion unit 3 that receives blue light B is formed to be thinner than the optical filter 7 disposed in the first photoelectric conversion unit 3 that receives red light R.

[0156] The components other than those described above are the same or substantially the same as the components of the photodetector 1 according to the first embodiment.

[0157] [Operational Effects] The photodetector 1 according to the sixth embodiment can provide the same operational effects as those provided by the photodetector 1 according to the first embodiment.

[0158] In addition, in the sixth embodiment, the present technology can be applied to a photodetector 1 that receives red light R, blue light B, and green light G, but does not receive infrared light.

[0159] 7. Seventh Embodiment A photodetector 1 according to a seventh embodiment of the present disclosure will be described with reference to Fig. 44. In the seventh embodiment, an example will be described in which the photodetector 1 according to the fourth embodiment and the photodetector 1 according to the sixth embodiment are combined.

[0160] [Configuration of Photodetector 1] FIG. 44 shows an example of a vertical cross-sectional configuration of a pixel 100 of a photodetector 1 according to the seventh embodiment.

[0161] 44, the photodetector 1 according to the seventh embodiment is configured by combining the photodetector 1 according to the fourth embodiment with the photodetector 1 according to the sixth embodiment. That is, the optical filter 7 of the photodetector 1 according to the fourth embodiment is disposed in the pixel 100 of the photodetector 1 according to the sixth embodiment. The optical filter 7 is formed in a lens shape.

[0162] The components other than those described above are the same or substantially the same as the components of the photodetector 1 according to the fourth embodiment or the photodetector 1 according to the sixth embodiment.

[0163] [Effects] The photodetector 1 according to the seventh embodiment can achieve effects that combine the effects obtained by the photodetector 1 according to the fourth embodiment and the effects obtained by the photodetector 1 according to the sixth embodiment.

[0164] 8. Eighth Embodiment A photodetector 1 according to an eighth embodiment of the present disclosure will be described with reference to Fig. 45. In the eighth embodiment, an example will be described in which the photodetector 1 according to the fifth embodiment and the photodetector 1 according to the sixth embodiment are combined.

[0165] [Configuration of Photodetector 1] FIG. 45 shows an example of a vertical cross-sectional configuration of a pixel 100 of a photodetector 1 according to the eighth embodiment.

[0166] 45 , the photodetector 1 according to the eighth embodiment is configured by combining the photodetector 1 according to the fifth embodiment with the photodetector 1 according to the sixth embodiment. That is, the optical filter 7 of the photodetector 1 according to the fifth embodiment is disposed in the pixel 100 of the photodetector 1 according to the sixth embodiment. The optical filter 7 is a surface plasmon resonance filter.

[0167] The other components are the same or substantially the same as the components of the photodetector 1 according to the fifth embodiment or the photodetector 1 according to the sixth embodiment.

[0168] [Effects] The photodetector 1 according to the eighth embodiment can achieve effects that combine the effects achieved by the photodetector 1 according to the fifth embodiment and the effects achieved by the photodetector 1 according to the sixth embodiment.

[0169] 9. Application Examples to Mobile Bodies The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of mobile body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0170] FIG. 45 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology according to the present disclosure can be applied.

[0171] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 45, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (Interface) 12053.

[0172] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0173] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0174] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc. based on the received images.

[0175] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0176] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0177] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, vehicle lane departure warning, etc.

[0178] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0179] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0180] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying the passengers of the vehicle or the outside of the vehicle of information. In the example of Fig. 45, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0181] FIG. 46 is a diagram showing an example of the installation position of the imaging unit 12031.

[0182] In FIG. 46, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0183] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided on the front nose and the imaging unit 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided on the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0184] 46 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, an overhead image of the vehicle 12100 viewed from above can be obtained.

[0185] At least one of the image capturing units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the image capturing units 12101 to 12104 may be a stereo camera made up of multiple image capturing elements, or may be an image capturing element having pixels for phase difference detection.

[0186] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation.

[0187] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines a collision risk that indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0188] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the images captured by the image capturing units 12101 to 12104. Such pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104 as infrared cameras and performing pattern matching on a series of feature points that indicate the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0189] The above describes an example of a vehicle control system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to the imaging unit 12031 among the components described above. By applying the technology according to the present disclosure to the imaging unit 12031, it is possible to improve oblique incidence characteristics.

[0190] 10. Application Example to Intra-Vivo Information Acquisition System The technology according to the present disclosure can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

[0191] FIG. 48 is a block diagram showing an example of a schematic configuration of a system for acquiring information from within a patient's body using a capsule endoscope, to which the technology according to the present disclosure can be applied.

[0192] The in-vivo information acquisition system 10001 includes a capsule endoscope 10100 and an external control device 10200 .

[0193] The capsule endoscope 10100 is swallowed by a patient during an examination. The capsule endoscope 10100 has an imaging function and a wireless communication function, and moves through the inside of organs such as the stomach and intestines by peristaltic movement or the like until it is naturally expelled from the patient, sequentially capturing images of the inside of the organs (hereinafter also referred to as in-vivo images) at predetermined intervals, and sequentially wirelessly transmitting information about the in-vivo images to an external control device 10200 outside the body.

[0194] The external control device 10200 comprehensively controls the operation of the in-vivo information acquisition system 10001. The external control device 10200 also receives information about the in-vivo images transmitted from the capsule endoscope 10100, and generates image data for displaying the in-vivo images on a display device (not shown) based on the received information about the in-vivo images.

[0195] In this way, the in-vivo information acquisition system 10001 can obtain in-vivo images of the state inside the patient's body at any time from the time the capsule endoscope 10100 is swallowed until it is expelled.

[0196] The configurations and functions of the capsule endoscope 10100 and the external control device 10200 will be described in more detail.

[0197] The capsule endoscope 10100 has a capsule-shaped housing 10101, which houses a light source unit 10111, an imaging unit 10112, an image processing unit 10113, a wireless communication unit 10114, a power supply unit 10115, a power supply unit 10116, and a control unit 10117.

[0198] The light source unit 10111 is composed of a light source such as an LED (light emitting diode), and irradiates the imaging field of the imaging unit 10112 with light.

[0199] The imaging unit 10112 is composed of an imaging element and an optical system consisting of multiple lenses provided in front of the imaging element. Reflected light (hereinafter referred to as observation light) of light irradiated onto the body tissue to be observed is collected by the optical system and incident on the imaging element. In the imaging unit 10112, the imaging element photoelectrically converts the incident observation light, generating an image signal corresponding to the observation light. The image signal generated by the imaging unit 10112 is provided to the image processing unit 10113.

[0200] The image processing unit 10113 is configured with processors such as a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit), and performs various signal processing on the image signal generated by the imaging unit 10112. The image processing unit 10113 provides the image signal that has been subjected to the signal processing to the wireless communication unit 10114 as RAW data.

[0201] The wireless communication unit 10114 performs predetermined processing such as modulation on the image signal that has been subjected to signal processing by the image processing unit 10113, and transmits the image signal to the external control device 10200 via the antenna 10114A. The wireless communication unit 10114 also receives a control signal related to drive control of the capsule endoscope 10100 from the external control device 10200 via the antenna 10114A. The wireless communication unit 10114 provides the control signal received from the external control device 10200 to the control unit 10117.

[0202] The power supply unit 10115 is composed of an antenna coil for receiving power, a power regeneration circuit that regenerates power from the current generated in the antenna coil, a boost circuit, etc. The power supply unit 10115 generates power using the principle of so-called contactless charging.

[0203] The power supply unit 10116 is configured by a secondary battery and stores the power generated by the power supply unit 10115. In Fig. 48, to avoid cluttering the drawing, arrows and the like indicating the destinations of the power supply unit 10116 are omitted, but the power stored in the power supply unit 10116 is supplied to the light source unit 10111, the imaging unit 10112, the image processing unit 10113, the wireless communication unit 10114, and the control unit 10117 and can be used to drive these units.

[0204] The control unit 10117 is composed of a processor such as a CPU, and appropriately controls the operation of the light source unit 10111, the imaging unit 10112, the image processing unit 10113, the wireless communication unit 10114, and the power supply unit 10115 in accordance with control signals transmitted from the external control device 10200.

[0205] The external control device 10200 is configured with a processor such as a CPU or a GPU, or a microcomputer or control board equipped with a processor and a storage element such as a memory. The external control device 10200 controls the operation of the capsule endoscope 10100 by transmitting a control signal to the control unit 10117 of the capsule endoscope 10100 via the antenna 10200A. In the capsule endoscope 10100, for example, the light irradiation conditions of the light source unit 10111 for the observation object can be changed by the control signal from the external control device 10200. Furthermore, the imaging conditions (e.g., the frame rate and exposure value of the imaging unit 10112) can be changed by the control signal from the external control device 10200. Furthermore, the control signal from the external control device 10200 can change the content of processing in the image processing unit 10113 and the conditions for transmitting image signals from the wireless communication unit 10114 (e.g., the transmission interval, the number of transmitted images, etc.).

[0206] The external control device 10200 also performs various image processing on the image signal transmitted from the capsule endoscope 10100 to generate image data for displaying the captured in-vivo image on a display device. The image processing may include various signal processing such as development processing (demosaic processing), high-quality image processing (band enhancement processing, super-resolution processing, NR (Noise Reduction) processing, and / or image stabilization processing), and / or enlargement processing (electronic zoom processing). The external control device 10200 controls the driving of the display device to display the captured in-vivo image based on the generated image data. Alternatively, the external control device 10200 may record the generated image data in a recording device (not shown) or print it out on a printing device (not shown).

[0207] An example of an in-vivo information acquisition system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to the image capturing unit 10112 among the configurations described above. By applying the technology according to the present disclosure to the image capturing unit 10112, it is possible to improve oblique incidence characteristics.

[0208] 11. Other Embodiments The present technology is not limited to the above-described embodiments and may be modified in various ways without departing from the spirit of the present technology. For example, among the photodetection devices according to the first to eighth embodiments, photodetection devices according to two or more of the above-described embodiments may be combined.

[0209] A photodetector according to a first embodiment of the present disclosure includes a first photoelectric conversion unit, a second photoelectric conversion unit, a partition wall, and an optical filter. The first photoelectric conversion unit is disposed on a base and converts light in a first wavelength range into electric charges. The second photoelectric conversion unit faces the first photoelectric conversion unit and is disposed at a distance from the first photoelectric conversion unit. The second photoelectric conversion unit converts light in a second wavelength range different from the first wavelength range into electric charges. The partition wall is disposed between the first and second photoelectric conversion units and surrounds the first photoelectric conversion unit. The partition wall has sidewalls inclined with respect to the surface of the base. The optical filter is disposed between the first and second photoelectric conversion units and is surrounded by the partition wall. The optical filter is formed by stacking, from the first photoelectric conversion unit to the second photoelectric conversion unit, a first layer having a first refractive index and a second layer having a second refractive index different from the first refractive index. The optical filter selectively transmits at least light in the first wavelength range. In the photodetector configured in this manner, since the side walls of the partitions are inclined, the optical filter is disposed from the surface of the base along the side walls of the partitions. Therefore, even if oblique incidence occurs near the partitions, the layer structure of the optical filter does not change, and the original characteristics of the optical filter can be maintained. Therefore, the optical filter selectively transmits even obliquely incident light, allowing it to be effectively received by the first photoelectric conversion unit.

[0210] In a photodetector according to a second embodiment of the present disclosure, at least a portion of the partition wall that contacts the optical filter in the photodetector according to the first embodiment is formed of a material having a lower refractive index than the optical filter. In the photodetector configured in this manner, the boundary surface between the optical filter and the side wall of the partition wall can be formed as the opposite surface, allowing obliquely incident light to be effectively received by the first photoelectric conversion unit.

[0211] In a photodetector according to a third embodiment of the present disclosure, the optical filter in the photodetector according to the first embodiment is a multilayer interference filter, and the photodetector configured in this manner can achieve the same effects as those achieved by the photodetector according to the first embodiment.

[0212] In a photodetector according to a fourth embodiment of the present disclosure, the optical filter in the photodetector according to the first embodiment is a surface plasmon resonance filter, and the photodetector configured in this manner can achieve the same effects as those achieved by the photodetector according to the first embodiment.

[0213] A photodetector according to a fifth embodiment of the present disclosure includes a first photoelectric conversion unit, a second photoelectric conversion unit, a partition wall, and an optical filter. The first photoelectric conversion unit is disposed on a base and converts light in a first wavelength range into electric charges. The second photoelectric conversion unit faces the first photoelectric conversion unit and is disposed at a distance from the first photoelectric conversion unit and converts light in a second wavelength range different from the first wavelength range into electric charges. The partition wall is disposed between the first photoelectric conversion unit and the second photoelectric conversion unit, surrounding the periphery of the first photoelectric conversion unit. The optical filter is surrounded by the partition wall between the first photoelectric conversion unit and the second photoelectric conversion unit, and is disposed from the surface of the base along a sidewall of the partition wall. The optical filter has a first layer having a first refractive index and a second layer having a second refractive index different from the first refractive index stacked on top of each other from the first photoelectric conversion unit to the second photoelectric conversion unit, and at least selectively transmits light in the first wavelength range. In the photodetector configured as described above, the optical filter is disposed from the surface of the base along the sidewall of the partition. Therefore, even if oblique incidence occurs near the partition, the layer structure of the optical filter does not change, and the original characteristics of the optical filter can be maintained. Therefore, the optical filter selectively transmits even obliquely incident light, allowing it to be effectively received by the first photoelectric conversion unit.

[0214] <Configuration of the Present Technology> The present technology has the following configuration. According to the present technology having the following configuration, it is possible to improve oblique incidence characteristics in a photodetector. (1) A photodetector comprising: a first photoelectric conversion unit disposed on a base and converting light in a first wavelength range into electric charges; a second photoelectric conversion unit facing the first photoelectric conversion unit and disposed at a distance from the first photoelectric conversion unit and converting light in a second wavelength range different from the first wavelength range into electric charges; a partition wall disposed between the first photoelectric conversion unit and the second photoelectric conversion unit so as to surround the periphery of the first photoelectric conversion unit and having a sidewall inclined with respect to a surface of the base; and an optical filter disposed between the first photoelectric conversion unit and the second photoelectric conversion unit so as to be surrounded by the partition wall and having a second layer having a second refractive index different from the first refractive index stacked on a first layer having a first refractive index from the first photoelectric conversion unit to the second photoelectric conversion unit, and which at least selectively transmits light in the first wavelength range. (2) The photodetector according to (1), wherein at least a portion of the partition that contacts the optical filter is formed from a material having a refractive index lower than that of the optical filter. (3) The photodetector according to (1) or (2), wherein a metal is disposed inside the partition. (4) The photodetector according to any one of (1) to (3), wherein, in side view, the partition is formed into a trapezoidal shape in which a second surface on the second photoelectric conversion unit side is smaller in width than a first surface on the first photoelectric conversion unit side. (5) The photodetector according to any one of (1) to (3), wherein, in side view, the partition is formed into an inverted trapezoidal shape in which a second surface on the second photoelectric conversion unit side is larger in width than a first surface on the first photoelectric conversion unit side. (6) The photodetector according to (3), wherein at least a portion of the metal disposed inside the partition is electrically connected to the second photoelectric conversion unit. (7) The photodetector according to (3) or (6), wherein, in a side view, the area of ​​a first end face of the metal disposed inside the partition on the side of the first photoelectric conversion unit is smaller than the area of ​​a second end face of the metal on the side of the second photoelectric conversion unit.(8) The photodetector according to any one of (1) to (7), wherein the optical filter is disposed from the surface of the base along the side wall of the partition, and the first layer and the second layer are disposed parallel to the side wall of the partition. (9) The photodetector according to any one of (1) to (8), wherein the optical filter is a multilayer interference filter. (10) The photodetector according to any one of (1) to (8), wherein the optical filter is a surface plasmon resonance filter. (11) The photodetector according to any one of (1) to (10), wherein the optical filter is formed by stacking two or more materials selected from amorphous silicon, silicon oxide, silicon nitride, silicon oxynitride, and titanium oxide. (12) The photodetector according to any one of (1) to (11), wherein the partition is formed by including one or more materials selected from silicon oxide, silicon nitride, silicon oxynitride, and titanium oxide. (13) The photodetector according to (3), (6), or (7), wherein the metal disposed inside the partition contains one or more selected from tungsten, aluminum, and copper. (14) The photodetector according to (1) or (9), wherein, in a side view, the cross-sectional shape of the optical filter is formed into a lens shape that curves and protrudes toward the first photoelectric conversion unit. (15) The photodetector according to any one of (1) to (14), wherein the first photoelectric conversion unit and the second photoelectric conversion unit constitute pixels, a plurality of the pixels are regularly arranged, and a transmission wavelength range of an optical filter disposed in one of the plurality of arranged pixels is different from that of an optical filter disposed in another of the pixels.(16) A photodetector comprising: a first photoelectric conversion unit disposed on a base and converting light in a first wavelength range into electric charges; a second photoelectric conversion unit facing the first photoelectric conversion unit and spaced apart from the first photoelectric conversion unit and converting light in a second wavelength range different from the first wavelength range into electric charges; a partition wall disposed between the first photoelectric conversion unit and the second photoelectric conversion unit so as to surround the periphery of the first photoelectric conversion unit; and an optical filter surrounded by the partition wall between the first photoelectric conversion unit and the second photoelectric conversion unit, disposed along a side wall of the partition wall from the surface of the base and having a first layer having a first refractive index and a second layer having a second refractive index different from the first refractive index stacked on top of the first layer from the first photoelectric conversion unit to the second photoelectric conversion unit, and at least selectively transmitting light in the first wavelength range.

[0215] This application claims priority based on Japanese Patent Application No. 2023-200327, filed on November 28, 2023, in the Japan Patent Office, the entire contents of which are incorporated herein by reference.

[0216] Those skilled in the art will recognize that various modifications, combinations, subcombinations, and variations may occur depending on design requirements and other factors, and are intended to be within the scope of the appended claims and their equivalents.

Claims

1. A photodetector comprising: a first photoelectric conversion unit disposed on a base and converting light in a first wavelength range into electric charges; a second photoelectric conversion unit facing the first photoelectric conversion unit and spaced apart from the first photoelectric conversion unit and converting light in a second wavelength range different from the first wavelength range into electric charges; a partition wall disposed between the first photoelectric conversion unit and the second photoelectric conversion unit so as to surround the periphery of the first photoelectric conversion unit and having a sidewall inclined with respect to a surface of the base; and an optical filter disposed between the first photoelectric conversion unit and the second photoelectric conversion unit so as to be surrounded by the partition wall and having a first layer having a first refractive index and a second layer having a second refractive index different from the first refractive index stacked from the first photoelectric conversion unit to the second photoelectric conversion unit, and at least selectively transmitting light in the first wavelength range.

2. The photodetector according to claim 1, wherein at least the portion of the partition that contacts the optical filter is made of a material having a lower refractive index than the optical filter.

3. The photodetector according to claim 1, wherein a metal is disposed inside the partition.

4. The photodetector device of claim 1, wherein, when viewed from the side, the partition is formed into a trapezoidal shape in which the width dimension of a second surface on the second photoelectric conversion section side is smaller than the width dimension of a first surface on the first photoelectric conversion section side.

5. The photodetector device of claim 1, wherein, when viewed from the side, the partition is formed into an inverted trapezoid shape in which the width dimension of a second surface on the second photoelectric conversion section side is greater than the width dimension of a first surface on the first photoelectric conversion section side.

6. The light detection device according to claim 3, wherein at least a portion of the metal disposed inside the partition is electrically connected to the second photoelectric conversion section.

7. The photodetector device of claim 3, wherein, when viewed from the side, the area of ​​a first end face of the metal arranged inside the partition on the side of the first photoelectric conversion unit is smaller than the area of ​​a second end face of the metal on the side of the second photoelectric conversion unit.

8. The photodetector according to claim 1, wherein the optical filter is disposed along the side wall of the partition from the surface of the base, and the first layer and the second layer are disposed parallel to the side wall of the partition.

9. The optical detection device according to claim 1, wherein the optical filter is a multi-layer interference filter.

10. The optical detection device according to claim 1, wherein the optical filter is a surface plasmon resonance filter.

11. The photodetector according to claim 1, wherein the optical filter is formed by laminating two or more materials selected from the group consisting of amorphous silicon, silicon oxide, silicon nitride, silicon oxynitride and titanium oxide.

12. The light detection device according to claim 1, wherein the partition is formed containing one or more selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride and titanium oxide.

13. The photodetector according to claim 3, wherein the metal disposed inside the partition is formed to contain one or more selected from the group consisting of tungsten, aluminum, and copper.

14. The light detection device according to claim 1, wherein the cross-sectional shape of the optical filter is formed into a lens shape that curves and protrudes toward the first photoelectric conversion section when viewed from the side.

15. The photodetection device according to claim 1, wherein the first photoelectric conversion unit and the second photoelectric conversion unit form pixels, the pixels are regularly arranged in a plurality of pixels, and an optical filter disposed in one of the plurality of arranged pixels has a transmission wavelength range different from that of an optical filter disposed in another of the pixels.

16. A photodetector comprising: a first photoelectric conversion unit disposed on a base and converting light in a first wavelength range into electric charges; a second photoelectric conversion unit facing the first photoelectric conversion unit and spaced apart from the first photoelectric conversion unit and converting light in a second wavelength range different from the first wavelength range into electric charges; a partition wall disposed between the first photoelectric conversion unit and the second photoelectric conversion unit so as to surround the periphery of the first photoelectric conversion unit; and an optical filter disposed between the first photoelectric conversion unit and the second photoelectric conversion unit, the periphery of which is surrounded by the partition wall and disposed from the surface of the base along a side wall of the partition wall, the optical filter having a first layer having a first refractive index and a second layer having a second refractive index different from the first refractive index stacked on top of the first layer from the first photoelectric conversion unit to the second photoelectric conversion unit, and which at least selectively transmits light in the first wavelength range.

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