Source circuit boards and integrated digital radio-frequency circuit systems having waveguide channels

Abstract

An integrated digital RF circuit system comprises: a base substrate comprising a substrate integrated waveguide comprising a waveguide width, a first plurality of vias, and a second plurality of vias; and a source circuit board comprising a waveguide channel, wherein: the waveguide channel is positioned at least partially between the first plurality of vias and the second plurality of vias; the waveguide channel defines a channel length and a channel width; the channel length is greater than the channel width; and the channel length is greater than the waveguide width.

Description

SOURCE CIRCUIT BOARDS AND INTEGRATED DIGITAL RADIOFREQUENCY CIRCUIT SYSTEMS HAVING WAVEGUIDE CHANNELSCROSS REFERENCE TO RELATED APPLICATION

[0001] This application claims the benefit of priority under 35 U.S.C. §119 of U.S. Provisional Application Serial No. 63 / 604254 filed on November 30, 2023, the content of which is relied upon and incorporated herein by reference in its entirety.BACKGROUNDField

[0002] The present disclosure generally relates to integrated digital radio-frequency (“RF”) circuit systems and source circuit boards having waveguide channels, and to methods for manufacturing the same.Technical Background

[0003] RF circuit systems (for example, RF transceivers) may desire to connect an antenna package (for example, a glass antenna package) to a circuit board (for example, a printed circuit board) with minimum electrical loss. However, typical methods of constructing such RF circuit systems with reduced electrical loss may involve using larger (and, often, thereby more costly) connectors to connect the antenna package and the circuit board of the RF circuit systems. However, in some contexts, RF circuit systems may also desire to reduce their size and manufacturing costs while also reducing electrical loss, and so such typical methods of reducing electrical loss may be undesirable.

[0004] RF circuit systems may typically require attaching a circuit board and an antenna package thereof by soldering the circuit board to the antenna package. However, requiring soldering of such may reduce the materials which may be viable for the formation of the circuit board, the antenna package, and / or any components of either or both of the circuit board and / or the antenna package. Further, soldering may cause differing degrees of thermal expansion between the circuit board and the antenna package, which may increase stress effects experienced by the resulting RF circuit systems. Further still, attaching a circuit board and an antenna package by soldering may require inserting one or more layers between the circuit board and the antenna package, such as redistribution layers, connectors, and / or jumpers.

[0005] Accordingly, a need may exist for an RF circuit system that minimizes the electrical loss between an antenna package and a circuit board of the RF circuit system while also minimizing a size of the RF circuit system and a cost of manufacturing the RF circuit system. Further, a need may exist for an RF circuit system that may attach an antenna package or a circuit board without requiring soldering of the antenna package to the circuit board and / or the insertion of layers therebetween.SUMMARY

[0006] According to a first embodiment Al, an integrated digital radio-frequency (“RF”) circuit system may comprise: a first base substrate comprising a first substrate integrated waveguide, the first substrate integrated waveguide comprising: a first waveguide length and a first waveguide width, a first plurality of vias disposed along the first waveguide length, wherein each via of the first plurality of vias extends at least partially through the first base substrate, and a second plurality of vias disposed along the first waveguide length, wherein each via of the second plurality of vias extends at least partially through the first base substrate and wherein the first plurality of vias and the second plurality of vias are separated by the first waveguide width; and a source circuit board comprising: a front side, a rear side opposite the front side, and a waveguide channel defined by the source circuit board which guides an electromagnetic wave to or from the first substrate integrated waveguide, wherein the waveguide channel extends from the rear side toward the front side; wherein: the waveguide channel is positioned at least partially between the first plurality of vias and the second plurality of vias; the waveguide channel defines a channel length and a channel width; the channel length is greater than the channel width; and the channel length is greater than the first waveguide width.

[0007] A second embodiment A2 includes the integrated digital RF circuit system according to the aspect Al, wherein the source circuit board may comprise the first base substrate, the first base substrate may comprise a source electromagnetic wave transmission element, and the source electromagnetic wave transmission element may propagate or receive the electromagnetic wave through the waveguide channel.

[0008] A third embodiment A3 includes the integrated digital RF circuit system according to the aspect A2, wherein the source electromagnetic wave transmission element may comprise: a grounded coplanar waveguide; a microstrip transmission line; a patch element; a slot antenna; an RF chip; or any combination thereof.

[0009] A fourth embodiment A4 includes the integrated digital RF circuit system according to the aspect A2 or the aspect A3, wherein the first base substrate may be attached to the source circuit board by at least one of: an adhesive; soldering; ambient temperature laser welding; laser sintering; optical contacting; thermal diffusion bonding; or any combination thereof.

[0010] A fifth embodiment A5 includes the integrated digital RF circuit system according to any of the aspects A1-A4, wherein the integrated digital RF circuit system may further comprise an antenna package, wherein the antenna package may be attached to the rear side of the source circuit board and wherein the antenna package may comprise the first base substrate.

[0011] A sixth embodiment A6 includes the integrated digital RF circuit system according to the aspect A5, wherein: the antenna package may further comprise a spacer layer and an antenna layer; the antenna layer may comprise an antenna element; the spacer layer may be positioned between the antenna layer and the first base substrate; and the first base substrate may be positioned between the spacer layer and the rear side of the source circuit board.

[0012] A seventh embodiment A7 includes the integrated digital RF circuit system according to the aspect A6, wherein the antenna element may either: receive the first electromagnetic wave from the first substrate integrated waveguide and transmit the first electromagnetic wave into an environment; receive the first electromagnetic wave from the environment and transmit the first electromagnetic wave to the first substrate integrated waveguide; or any combination thereof.

[0013] An eighth embodiment A8 includes the integrated digital RF circuit system according to any of the aspects A5-A7, wherein: the source circuit board may further comprise a second base substrate; the second base substrate may comprise a second substrate integrated waveguide; the antenna package may comprise a package electromagnetic wave transmission element; the second substrate integrated waveguide may comprise a source electromagnetic wave transmission element; and the waveguide channel may guide the electromagnetic wave between the source electromagnetic wave transmission element and the package electromagnetic wave transmission element.

[0014] A ninth embodiment A9 includes the integrated digital RF circuit system according to the aspect A8, wherein either or both of the package electromagnetic wave transmission element and the source electromagnetic wave transmission element maycomprise: a grounded coplanar waveguide; a microstrip transmission line; a patch element; a slot antenna; an RF chip; or any combination thereof.

[0015] A tenth embodiment A10 includes the integrated digital RF circuit system according to the aspect A8 or the aspect A9, wherein the second substrate integrated waveguide may comprise: a third plurality of vias disposed along the second waveguide length, wherein each via of the third plurality of vias extends at least partially through the second base substrate; and a fourth plurality of vias disposed along the second waveguide length, wherein each via of the fourth plurality of vias extends at least partially through the second base substrate and wherein the third plurality of vias and the fourth plurality of vias are separated by the second waveguide width; wherein: the waveguide channel may be positioned at least partially between the third plurality of vias and the fourth plurality of vias; and the channel length may be greater than the second waveguide width.

[0016] An eleventh embodiment Al l includes the integrated digital RF circuit system according to any of the aspects A5-A10, wherein the antenna package may be attached to the source circuit board by at least one of: an adhesive; soldering; ambient temperature laser welding; laser sintering; optical contacting; thermal diffusion bonding; or any combination thereof.

[0017] A twelfth embodiment A 12 includes the integrated digital RF circuit system according to any of the embodiments Al-Al l, wherein the electromagnetic wave may comprise a frequency of greater than or equal 300 MHz and less than or equal to 300 GHz.

[0018] A thirteenth embodiment A13 includes the integrated digital RF circuit system according to the embodiment A 12, wherein the electromagnetic wave may comprise a frequency of greater than or equal to 75 GHz and less than or equal to 84 GHz.

[0019] A fourteenth embodiment A 14 includes the integrated digital RF circuit system according to any of the embodiments A1-A13, wherein: the electromagnetic wave may comprise a wavelength X; the first waveguide width may be greater than or equal to (0.5 * X) - 0.05 mm; and the first waveguide width may be less than or equal to (0.5 * X) + 0.05 mm.

[0020] A fifteenth embodiment A15 includes the integrated digital RF circuit system according to any of the embodiments A1-A14, wherein the channel length may be greater than or equal to 2.9 mm and less than or equal to 3.1 mm; and the channel width may be greater than or equal to 1.4 mm and less than or equal to 1.6 mm.

[0021] A sixteenth embodiment A16 includes the integrated digital RF circuit system according to any of the embodiments A1-A15, wherein the channel length may be parallel to the first waveguide length.

[0022] A seventeenth embodiment A17 includes the integrated digital RF circuit system according to any of the embodiments Al -A 16, wherein the source circuit board may comprise a printed circuit board.

[0023] An eighteenth embodiment Al 8 includes the integrated digital RF circuit system according to any of the embodiments Al -A 17, wherein the first base substrate may comprise at least one of: a glass; a ceramic; a glass-ceramic; a polymer; a polycrystalline ceramic; a single crystal ceramic; or any combination thereof.

[0024] According to a nineteenth embodiment Bl, a method for manufacturing an integrated digital RF circuit system may comprise: forming and / or using a source circuit board comprising: a base substrate comprising a substrate integrated waveguide, the substrate integrated waveguide comprising: a waveguide length and a waveguide width, a first plurality of vias disposed along the waveguide length, wherein each via of the first plurality of vias extends at least partially through the base substrate, and a second plurality of vias disposed along the waveguide length, wherein each via of the second plurality of vias extends at least partially through the base substrate and wherein the first plurality of vias and the second plurality of vias are separated by the first waveguide width, a front side, a rear side opposite the front side, and a waveguide channel defined by the source circuit board for guiding an electromagnetic wave to or from the first substrate integrated waveguide, wherein the waveguide channel extends from the rear side toward the front side, wherein: the waveguide channel defines a channel length and a channel width, the channel length is greater than the channel width, the channel length is greater than the waveguide width, and the waveguide channel is positioned at least partially between the first plurality of vias and the second plurality of vias; attaching an antenna layer to a spacer layer; attaching the spacer layer to a waveguide layer; attaching the waveguide layer to the rear side of the source circuit board, wherein: the spacer layer is positioned between the waveguide layer and the antenna layer, and the waveguide layer is positioned between the spacer layer and the source circuit board.

[0025] A twentieth embodiment B2 includes the method according to the aspect Bl, wherein the base substrate may comprise a source electromagnetic wave transmission element,and the source electromagnetic wave transmission element may propagate or receive the electromagnetic wave through the waveguide channel.

[0026] A twenty-first embodiment B3 includes the method according to the aspect B2, wherein the source electromagnetic wave transmission element may comprise: a grounded coplanar waveguide; a microstrip transmission line; a patch element; a slot antenna; an RF chip; or any combination thereof.

[0027] A twenty-second embodiment B4 includes the method according to the aspect B2 or the aspect B3, wherein the base substrate may be attached to the source circuit board by at least one of: an adhesive; soldering; ambient temperature laser welding; laser sintering; optical contacting; thermal diffusion bonding; or any combination thereof.

[0028] A twenty-third embodiment B5 includes the method according to any of the embodiments B1-B4, wherein the electromagnetic wave may comprise a frequency of greater than or equal 300 MHz and less than or equal to 300 GHz.

[0029] A twenty-fourth embodiment B6 includes the method according to the embodiment B5, wherein the electromagnetic wave may comprise a frequency of greater than or equal to 75 GHz and less than or equal to 84 GHz.

[0030] A twenty-fifth embodiment B7 includes the method according to any of the embodiments B1-B6, wherein: the electromagnetic wave may comprise a wavelength X; the waveguide width may be greater than or equal to (0.5 * X) - 0.05 mm; and the waveguide width may be less than or equal to (0.5 * X) + 0.05 mm.

[0031] A twenty-sixth embodiment B8 includes the method according to any of the embodiments B1-B7, wherein the channel length may be greater than or equal to 2.9 mm and less than or equal to 3. 1 mm; and the channel width may be greater than or equal to 1.4 mm and less than or equal to 1 .6 mm.

[0032] A twenty-seventh embodiment B9 includes the method according to any of the embodiments B1-B8, wherein the channel length may be parallel to the waveguide length.

[0033] A twenty-eighth embodiment B10 includes the method according to any of the embodiments B1-B9, wherein the source circuit board may comprise a printed circuit board.

[0034] An twenty-ninth embodiment B 11 includes the method according to any of the embodiments B1-B10, wherein the base substrate may comprise at least one of: a glass; aceramic; a glass-ceramic; a polymer; a polycrystalline ceramic; a single crystal ceramic; or any combination thereof.

[0035] According to a thirtieth embodiment Cl, a method for manufacturing an integrated digital RF circuit system may comprise: forming and / or using a base substrate comprising a substrate integrated waveguide, the substrate integrated waveguide comprising: a first waveguide length and a first waveguide width, a first plurality of vias disposed along the first waveguide length, wherein each via of the first plurality of vias extends at least partially through the base substrate, and a second plurality of vias disposed along the first waveguide length, wherein each via of the second plurality of vias extends at least partially through the base substrate and wherein the first plurality of vias and the second plurality of vias are separated by the first waveguide width; attaching an antenna layer to a spacer layer; attaching the spacer layer to the base substrate; and attaching the base substrate to a rear side of a source circuit board comprising: a front side opposite the rear side, and a waveguide channel defined by the source circuit board for guiding an electromagnetic wave to or from the substrate integrated waveguide, wherein: the waveguide channel extends from the rear side toward the front side, the waveguide channel is positioned at least partially between the first plurality of vias and the second plurality of vias, the waveguide channel defines a channel length and a channel width, the channel length is greater than the channel width, the channel length is greater than the first waveguide width, the base substrate is positioned between the spacer layer and the source circuit board, and the spacer layer is positioned between the antenna layer and the base substrate.

[0036] A thirty-first embodiment C2 includes the method according to the aspect Cl, wherein the base substrate may comprise a source electromagnetic wave transmission element, and the source electromagnetic wave transmission element may propagate or receive the electromagnetic wave through the waveguide channel.

[0037] A thirty-second embodiment C3 includes the method according to the aspect C2, wherein the source electromagnetic wave transmission element may comprise: a grounded coplanar waveguide; a microstrip transmission line; a patch element; a slot antenna; an RF chip; or any combination thereof.

[0038] A thirty-third embodiment C4 includes the method according to the aspect C2 or the aspect C3, wherein the base substrate may be attached to the source circuit board by atleast one of: an adhesive; soldering; ambient temperature laser welding; laser sintering; optical contacting; thermal diffusion bonding; or any combination thereof.

[0039] A thirty-fourth embodiment C5 includes the method according to any of the aspects C1-C4, wherein the source circuit board may further comprise a second base substrate; the second base substrate may comprise a second substrate integrated waveguide; the antenna layer may comprise a package electromagnetic wave transmission element; the waveguide channel may guide the electromagnetic wave between the source electromagnetic wave transmission element and the package electromagnetic wave transmission element.

[0040] A thirty-fifth embodiment C6 includes the method according to the aspect C5, wherein either or both of the package electromagnetic wave transmission element and the source electromagnetic wave transmission element may comprise: a grounded coplanar waveguide; a microstrip transmission line; a patch element; a slot antenna; an RF chip; or any combination thereof.

[0041] A thirty-sixth embodiment C7 includes the method according to the aspect C5 or the aspect C6, wherein the second substrate integrated waveguide may comprise: a second waveguide length and a second waveguide width; a third plurality of vias disposed along the second waveguide length, wherein each via of the third plurality of vias extends at least partially through the second base substrate; and a fourth plurality of vias disposed along the second waveguide length, wherein each via of the fourth plurality of vias extends at least partially through the second base substrate and wherein the third plurality of vias and the fourth plurality of vias are separated by the second waveguide width; wherein: the waveguide channel may be positioned at least partially between the third plurality of vias and the fourth plurality of vias; and the channel length may be greater than the second waveguide width.

[0042] An thirty-seventh embodiment C8 includes the method according to any of the aspects C1-C7, wherein the electromagnetic wave may comprise a frequency of greater than or equal 300 MHz and less than or equal to 300 GHz.

[0043] A thirty-eighth embodiment C9 includes the method according to the aspect C8, wherein the electromagnetic wave may comprise a frequency of greater than or equal to 75 GHz and less than or equal to 84 GHz.

[0044] A thirty-ninth embodiment CIO includes the method according to any of the aspects C1-C9, wherein the electromagnetic wave comprises a wavelength X; the firstwaveguide width may be greater than or equal to (0.5 * X) - 0.05 mm; and the first waveguide width may be less than or equal to (0.5 * X) + 0.05 mm.

[0045] An fortieth embodiment Cl l includes the method according to any of the aspects C1-C10, wherein the channel length may be greater than or equal to 2.9 mm and less than or equal to 3. 1 mm; and the channel width may be greater than or equal to 1.4 mm and less than or equal to 1.6 mm.

[0046] A forty-first embodiment C12 includes the method according to any of the embodiments Cl-Cl l, wherein the channel length may be parallel to the first waveguide length.

[0047] A forty-second embodiment C13 includes the method according to any of the embodiments C1-C12, wherein the source circuit board may comprise a printed circuit board.

[0048] A forty-third embodiment C14 includes the method according to any of the embodiments C1-C13, wherein the first base substrate may comprise at least one of: a glass; a ceramic; a glass-ceramic; a polymer; a polycrystalline ceramic; a single crystal ceramic; or any combination thereof.

[0049] Additional features and advantages of the aspects described herein will be set forth in the detailed description which follows, and in part will be readily apparent to those skilled in the art from that description or recognized by practicing the aspects described herein, including the detailed description, which follows, the claims, as well as the appended drawings.

[0050] It is to be understood that both the foregoing general description and the following detailed description describe various aspects and are intended to provide an overview or framework for understanding the nature and character of the claimed subject matter. The accompanying drawings are included to provide a further understanding of the various aspects, and are incorporated into and constitute a part of this specification. The drawings illustrate the various aspects described herein, and together with the description serve to explain the principles and operations of the claimed subject matter.BRIEF DESCRIPTION OF THE DRAWINGS

[0051] The embodiments set forth in the drawings are illustrative and exemplary in nature and not intended to limit the subject matter defined by the claims. The following detailed description of the illustrative embodiments can be understood when read inconjunction with the following drawings, wherein like structure is indicated with like reference numerals and in which:

[0052] FIG. 1 schematically depicts an exploded view of an integrated digital RF circuit system comprising a source circuit board having a circuit board top layer and a circuit board bottom layer and an antenna package having a waveguide layer, a spacer layer, and an antenna layer, according to one or more embodiments shown and described herein;

[0053] FIG. 2A schematically depicts a rear side of a circuit board bottom layer of a source circuit board, according to one or more embodiments shown and described herein;

[0054] FIG. 2B schematically depicts a zoomed in view of a first base substrate on the rear side of the circuit board bottom layer of the source circuit board of FIG. 2A, according to one or more embodiments shown and described herein;

[0055] FIG. 2C schematically depicts a front side of the circuit board bottom layer of the source circuit board of FIG. 2A, according to one or more embodiments shown and described herein;

[0056] FIG. 2D schematically depicts a zoomed in view of an integrated circuit on the front side of the circuit board bottom layer of the source circuit board of FIG. 2A, according to one or more embodiments shown and described herein;

[0057] FIG. 3 A schematically depicts a front side of a circuit board top layer of a source circuit board, according to one or more embodiments shown and described herein;

[0058] FIG. 3B schematically depicts a zoomed in view of waveguide channels on the front side of the circuit board top layer of the source circuit board depicted in FIG. 3A, according to one or more embodiments shown and described herein;

[0059] FIG. 3C schematically depicts a zoomed in view of a substrate integrated waveguide on a first base substrate on the rear side of a circuit board bottom layer of a source circuit board, with an overlay view of the waveguide channel of the circuit board top layer of the source circuit board depicted in FIG. 3A, according to one or more embodiments shown and described herein;

[0060] FIG. 4A schematically depicts an exploded view of a waveguide layer of an antenna package above a circuit board top layer of a source circuit board, according to one or more embodiments shown and described herein;

[0061] FIG. 4B schematically depicts a zoomed in view of a substrate integrated waveguide on the waveguide layer of FIG. 4A, with an overlay view of a waveguide channel of a circuit board top layer of the source circuit board, according to one or more embodiments shown and described herein;

[0062] FIG. 5 schematically depicts an antenna layer of an antenna package, according to one or more embodiments shown and described herein;

[0063] FIG. 6 is a flow diagram of a first method for manufacturing an integrated digitalRF circuit system, according to one or more embodiments shown and described herein;

[0064] FIG. 7 is a flow diagram of a second method for manufacturing an integrated digital RF circuit system, according to one or more embodiments shown and described herein; and

[0065] FIG. 8 is a plot of insertion loss versus frequency of electromagnetic waves propagated by an exemplary substrate integrated waveguide (y-axis: insertion loss of the substrate integrated waveguide (decibels); x-axis: frequency of the electromagnetic waves propagated by the substrate integrated waveguide (Gigahertz)), according to one or more embodiments shown and described herein.DETAILED DESCRIPTION

[0066] The present disclosure, in one form, is related to source circuit boards and integrated digital radio-frequency (“RF”) circuit systems having waveguide channels for connecting an antenna to a source circuit board, in particular for usage in routing microwaves or millimeter- waves from a waveguide on the source circuit board to a waveguide on the antenna. Reference will now be made in detail to source circuit boards, integrated digital RF circuit systems, and methods of manufacturing the same.

[0067] Specifically, in embodiments, source circuit boards and integrated digital RF circuit systems described herein may include a waveguide channel positioned about an electromagnetic wave transmission element, at least partially between bias of a waveguide, and parallel or substantially parallel to the vias of the waveguide. In embodiments, the waveguide may be a waveguide of a substrate of either the source circuit board or of an antenna package of the integrated digital RF circuit system.

[0068] In embodiments, a waveguide channel may be positioned about an electromagnetic wave transmission element. In embodiments, a waveguide channel may bepositioned at least partially between a first plurality of vias and a second plurality of vias of a waveguide. In embodiments, a waveguide channel may define a channel length and a channel width, a waveguide may define a waveguide length and waveguide width, the channel length may be greater than the channel width, and the channel length may be greater than the waveguide width. Accordingly, in embodiments, the waveguide channel may be positioned parallel or substantially parallel to the waveguide length of the waveguide. Accordingly, in embodiments, the waveguide channel may be sized such that the waveguide channel cannot have a channel length perpendicular or substantially perpendicular to the waveguide length of the waveguide while also being positioned about the electromagnetic wave transmission element.

[0069] In embodiments, a waveguide channel may define a channel width and a channel length greater than the channel width, and the waveguide channel may be positioned about a source electromagnetic wave transmission element of a source circuit board, at least partially between a first plurality of vias and a second plurality vias of a first waveguide of the source circuit board, about a package electromagnetic wave transmission element of an antenna package, at least partially between a third plurality of vias and a fourth plurality of vias of a second waveguide of the antenna package, and the channel length may be greater than both a first waveguide width of the first waveguide and a second waveguide width of the second waveguide. Accordingly, in embodiments, the waveguide channel may be positioned parallel or substantially parallel to both a first waveguide length of the first waveguide and a second waveguide length of a second waveguide.

[0070] An advantage of the present disclosure is, thereby, that, in embodiments, such waveguide channels may, as described in further detail below, minimize electrical loss between a first waveguide of a source circuit board and a second waveguide of an antenna package (between which the waveguide channel is positioned), as, for example, the waveguide channel may provide a waveguide for an electromagnetic wave propagated between the first waveguide and the second waveguide.

[0071] Another advantage of the present disclosure is that, in embodiments, by orienting a waveguide channel parallel or substantially parallel to a waveguide length of a waveguide, a size of the waveguide and / or of a substrate or layer upon which the waveguide is positioned may be reduced by, for example, reducing a waveguide width of the waveguide due to the waveguide width not having to include an entirety or majority of the channel length. Accordingly, in embodiments, by reducing a size of a waveguide and / or of a substrate or layerupon which the waveguide is positioned, a manufacturing cost of the waveguide, of the substrate and / or layer upon which the waveguide is positioned, and / or of a source circuit board, antenna package, and / or integrated digital RF circuit system of which the substrate and / or layer is a component.

[0072] Another advantage of the present disclosure is that, in embodiments, integrated digital RF circuit systems comprising antenna packages and source circuit boards having embodiments of waveguide channels described herein may be manufactured, in embodiments, without soldering the source circuit board to the antenna package. Accordingly, in embodiments, integrated digital RF circuit systems described herein may provide reduced stress experienced by the integrated digital RF circuit systems (caused by, for example, thermal expansion caused by soldering the antenna package to the source circuit board) and / or provide greater flexibility in choice of materials for forming the source circuit board, the antenna package, and / or any components of the source circuit board and / or the antenna package (when compared to, for example, alternative circuit systems having antenna packages soldered to circuit boards).

[0073] Another advantage of the present disclosure is that, in embodiments, integrated digital RF circuit systems described herein may not require layers positioned between an antenna package and a source circuit board of the integrated digital RF circuit system due to, for example, the source circuit board having embodiments of waveguide channels described herein and / or the source circuit board not being soldered to the antenna layer. Accordingly, integrated digital RF circuit systems described herein may, in embodiments, incorporate fewer components than, for example, alternative circuit systems, thereby, for example, reducing cost and / or complexity of manufacturing embodiments of integrated digital RF circuit systems described herein.

[0074] Ranges may be expressed herein as from “about” one particular value, and / or to “about” another particular value. When such a range is expressed, another embodiment includes from the one particular value and / or to the other particular value. Similarly, when values are expressed as approximations, by use of the antecedent “about,” it will be understood that the particular value forms another embodiment. It will be further understood that the endpoints of each of the ranges are significant both in relation to the other endpoint, and independently of the other endpoint.

[0075] Directional terms as used herein - for example up, down, right, left, front, back, top, bottom - are made only with reference to the figures as drawn and are not intended to imply absolute orientation.

[0076] Unless otherwise expressly stated, it is in no way intended that any method set forth herein be construed as requiring that its steps be performed in a specific order, nor that with any apparatus specific orientations be required. Accordingly, where a method claim does not actually recite an order to be followed by its steps, or that any apparatus claim does not actually recite an order or orientation to individual components, or it is not otherwise specifically stated in the claims or description that the steps are to be limited to a specific order, or that a specific order or orientation to components of an apparatus is not recited, it is in no way intended that an order or orientation be inferred, in any respect. This holds for any possible non-express basis for interpretation, including: matters of logic with respect to arrangement of steps, operational flow, order of components, or orientation of components; plain meaning derived from grammatical organization or punctuation, and; the number or type of embodiments described in the specification.

[0077] As used herein, the singular forms “a,” “an” and “the” include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to “a” component includes aspects having two or more such components, unless the context clearly indicates otherwise.

[0078] Turning now to the drawings, in FIG. 1, an integrated digital RF circuit system 100 includes a source circuit board 110 and an antenna package 120. In embodiments, the source circuit board 110 may be a printed circuit board (“PCB”). In the embodiment of FIG. 1, the source circuit board 110 includes a circuit board bottom layer 200 and a circuit board top layer 300. However, in other embodiments, the source circuit board 110 may include only one layer, three layers, four layers, or even five or more layers. In the embodiment of FIG. 1, the antenna package 120 includes a waveguide layer 400, a spacer layer 450, and an antenna layer 500.

[0079] In the embodiment of FIG. 1, the antenna package 120 may be attached to a rear side 114 of the source circuit board 110 (defined by, in the embodiment of FIG. 1, the circuit board top layer 300). Further, in the embodiment of FIG. 1, the layers 400, 450, 500 may all be attached sequentially such that the spacer layer 450 is positioned between the waveguide layer 400 and the antenna layer 500. Accordingly, in the embodiment of FIG. 1, when theintegrated digital RF circuit system 100 is fully assembled (for example, by attaching the antenna package 120 to the source circuit board 110), the waveguide layer 400 may be positioned between the spacer layer 450 and the rear side 114 of the source circuit board 110, with the antenna layer 500 being a distal-most layer of the layers 400, 450, 500 relative to the source circuit board 110. In embodiments, the circuit board top layer 300 may be attached to the circuit board bottom layer 200, such that the circuit board bottom layer 200 defines a front side 112 of the source circuit board 110, opposite the rear side 114.

[0080] In embodiments, the circuit board layers 200, 300 may be attached by an adhesive (for example, an organic adhesive), soldering, ambient temperature laser welding, laser sintering, optical contacting (for example, wringing), thermal diffusion bonding between metal layers, and / or any other attachment mechanisms, as are known in the art. In embodiments wherein the circuit board layers 200, 300 are attached by an adhesive, the adhesive may be applied, in embodiments, by roller, inkjet, spraying, pre-cut adhesive films, or any combination thereof.

[0081] In embodiments, any, some, or all of the layers 400, 450, 500 may be attached by an adhesive (for example, an organic adhesive), soldering, ambient temperature laser welding, laser sintering, optical contacting (for example, wringing), thermal diffusion bonding between metal layers, and / or any other attachment mechanisms, as are known in the art. In embodiments wherein any, some, or all of the layers 400, 450, 500 are attached by an adhesive, the adhesive may be applied, in embodiments, by roller, ink jet, spraying, pre-cut adhesive films, or any combination thereof.

[0082] In embodiments, the source circuit board 110 and the antenna package 120 may be attached by an adhesive (for example, an organic adhesive), soldering, ambient temperature laser welding, laser sintering, optical contacting (for example, wringing), thermal diffusion bonding between metal layers, and / or any other attachment mechanisms, as are known in the art. In embodiments wherein the source circuit board 110 and the antenna package 120 are attached by an adhesive, the adhesive may be applied, in embodiments, by roller, ink jet, spraying, pre-cut adhesive films, or any combination thereof.

[0083] In embodiments, the integrated digital RF circuit system 100 may be used, for example, for telecommunication applications for third generation (3G), fourth generation (4G), fifth generation (5G), and / or sixth generation (6G) cellular network technology and long term evolution (LTE) technology, Bluetooth communication, near field communication (NFC),radio frequency identification (RFID) signals, global positioning system (GPS) signals, satellite to satellite communications, radar, and other radio frequency applications. Accordingly, in embodiments, the antenna layer 500 may include antenna elements (for example, as depicted in FIG. 5 as antenna elements 510 and described in further detail below) which send and / or receive and / or are configured to send and / or receive an RF signal (for example, as an electromagnetic wave which may be, in embodiments, a microwave or millimeter-wave). In embodiments, the antenna layer 500 may thereby propagate and / or receive and / or be configured to propagate and / or receive an electromagnetic signal through the spacer layer 450 and via a waveguide of the waveguide layer 400 to the source circuit board 110 which may, thereby, be electrically coupled to the antenna package 120.

[0084] In embodiments, any, some, or all of the source circuit board 110, the circuit board bottom layer 200, and / or the circuit board top layer 300 may be formed, partially or wholly, from one or more dielectric materials. In embodiments, a dielectric material forming, partially or wholly, any, some, or all of the source circuit board 110, the circuit board bottom layer 200, and / or the circuit board top layer 300 may include a glass (including, in embodiments, any, some, or all of lithium potassium borosilicate glass, silica glass, an ion- exchanged glass, and / or an inorganic glass), a ceramic (including, in embodiments, any, some, or all of a polycrystalline ceramic, a polycrystalline inorganic material, a polycrystalline aluminum oxide, alumina, and / or silica), a glass-ceramic (including, in embodiments, Coming 9606® cordierite glass-ceramic), a polymer, (including, in embodiments, polycarbonate, ceramic-fdled PTFE composites, and / or Topas®), a polycrystalline ceramic, a single crystal ceramic (including, in embodiments, sapphire), and / or any combination thereof . In embodiments, a dielectric material forming, partially or wholly, any, some, or all of the source circuit board 110, the circuit board bottom layer 200, and / or the circuit board top layer 300 may include an organic material and / or an inorganic material. In embodiments, any, some, or all of the source circuit board 110, the circuit board bottom layer 200, and / or the circuit board top layer 300 may be formed, partially or wholly, from a plurality of dielectric materials, and, in certain such embodiments, the plurality of dielectric materials may include a plurality of organic materials, a plurality of inorganic materials, and / or any combination of one or more organic materials and one or more inorganic materials. In embodiments wherein any, some, or all of the source circuit board 110, the circuit board bottom layer 200, and / or the circuit board top layer 300 are formed, partially or wholly, from a plurality of dielectric materials, the plurality of dielectric materials may form individual layers of any, some, or all of the sourcecircuit board 110, the circuit board bottom layer 200, and / or the circuit board top layer 300. In embodiments, one or more laminates may be applied to any, some, or all of the source circuit board 110, the circuit board bottom layer 200, and / or the circuit board top layer 300 to, for example, decrease a dielectric permittivity of the source circuit board 110, the circuit board bottom layer 200, and / or the circuit board top layer 300.

[0085] In embodiments, the spacer layer 450 may be formed from a dielectric material, such as, in embodiments, a glass (including, in embodiments, any, some, or all of lithium potassium borosilicate glass, silica glass, and / or an inorganic glass), a ceramic (including, in embodiments, any, some, or all of a polycrystalline ceramic, a polycrystalline inorganic material, a polycrystalline aluminum oxide, alumina, and / or silica), a glass-ceramic (including, in embodiments, Coming 9606® cordierite glass-ceramic), a polymer, (including, in embodiments, polycarbonate, ceramic-filled PTFE composites, and / or Topas®), a polycrystalline ceramic, a single crystal ceramic (including, in embodiments, sapphire), and / or any combination thereof.. In embodiments, the spacer layer 450 may be formed from an adhesive. In embodiments, the spacer layer 450 may be formed from an adhesive comprising an organic adhesive and / or an inorganic adhesive. In embodiments, the spacer layer 450 may be formed from an adhesive containing glass beads. In embodiments, the antenna layer 500 may be formed from the same dielectric material(s) as any, some, or all of the source circuit board 110, the circuit board bottom layer 200, the circuit board top layer 300, the waveguide layer 400, and / or the antenna layer 500, which may, in embodiments, reduce bending of the integrated digital RF circuit system 100.

[0086] In embodiments, the antenna layer 500 may be formed from a dielectric material, such as, in embodiments, a glass (including, in embodiments, any, some, or all of lithium potassium borosilicate glass, silica glass, and / or an inorganic glass), a ceramic (including, in embodiments, any, some, or all of a polycrystalline ceramic, a polycrystalline inorganic material, a polycrystalline aluminum oxide, alumina, and / or silica), a glass-ceramic (including, in embodiments, Coming 9606® cordierite glass-ceramic), a polymer, (including, in embodiments, polycarbonate, ceramic-filled PTFE composites, and / or Topas®), a polycrystalline ceramic, a single crystal ceramic (including, in embodiments, sapphire), and / or any combination thereof.. In embodiments, the antenna layer 500 may be formed from the same dielectric material(s) as any, some, or all of the source circuit board 110, the circuit board bottom layer 200, the circuit board top layer 300, the waveguide layer 400, and / or the spacerlayer 450, which may, in embodiments, reduce bending of the integrated digital RF circuit system 100.

[0087] In embodiments, the spacer layer 450 may be positioned between the antenna layer 500 and the waveguide layer 400, by attaching the waveguide layer 400 to the spacer layer 450 and attaching the antenna layer 500 to the spacer layer 450 on a side of the spacer layer 450 opposite the waveguide layer 400. By positioning the spacer layer 450 between the antenna layer 500 and the waveguide layer 400, the spacer layer 450 may create a resonant structure, enabling the waveguide layer 400 to propagate an electromagnetic wave from the source circuit board 110 and to the antenna layer 500 (via, for example, the waveguide layer 400) and / or from the antenna layer 500 and to the source circuit board 110 (via, for example, the waveguide layer 400). However, in embodiments, to propagate an electromagnetic wave between a waveguide of the source circuit board 110 and the waveguide layer 400, a connecting mechanism may advantageously be included therebetween to minimize electrical loss of the electromagnetic wave between the source circuit board 110 and the waveguide layer 400.

[0088] In embodiments, certain applications of integrated digital RF circuit systems (such as, in embodiments, the integrated digital RF circuit system 100) may desire minimization of a size, as defined by, for example, a length of the integrated digital RF circuit system 100, the source circuit board 110, and / or the antenna package 120 (as measured in, for example, the x-direction of FIG. 1), a width of the integrated digital RF circuit system 100, the source circuit board 110, and / or the antenna package 120 (as measured in, for example, the y- direction of FIG. 1), and / or a thickness of the integrated digital RF circuit system 100, the source circuit board 110, and / or the antenna package 120 (as measured in, for example, the z- direction of FIG. 1). Accordingly, in embodiments, it may be desirable to decrease a size of a connection mechanism between the source circuit board 110 and the waveguide layer 400.

[0089] In embodiments, any, some, or all of the source circuit board 110, the antenna package 120, and / or any, some, or all of the layers 200, 300, 400, 450, 500 may include components not depicted herein which may be nonetheless readily understood by persons having ordinary skill in the art.

[0090] Referring to FIGS. 2A-2B, a first base substrate 250 may be attached to a side of the circuit board bottom layer 200 closest to the rear side 114 of the source circuit board 110. In the embodiment of FIGS. 2A-2B, the first base substrate 250 may be separate from(and, for example, attached to) the circuit board bottom layer 200. However, in other embodiments, the first base substrate 250 may entirely form the circuit board bottom layer 200.

[0091] The first base substrate 250 includes first substrate integrated waveguides (“SIWs”) 260, and source electromagnetic wave transmission elements 261 are positioned between vias 262 of each of the first SIWs 260 (for example, as depicted in FIG. 3C and described in further detail below). In embodiments, each of the source electromagnetic wave transmission elements 261 may propagate and / or receive an electromagnetic wave (guided by, for example, the first SIWs 260) to and / or from other electromagnetic wave transmission elements, such as, for example, electromagnetic wave transmission elements of the antenna package 120 (such as, for example, first electromagnetic wave transmission elements 421 A, as depicted in FIGS. 4A-4B and described in further detail below). Accordingly, in embodiments, the source electromagnetic wave transmission elements 261 may include, for example, grounded coplanar waveguides, microstrip transmission lines, patch elements (for example, patch antennas), slot antennas, an RF chip, or any combination thereof.

[0092] In the embodiment of FIGS. 2A-2B, the first base substrate 250 includes 7 first SIWs 260. However, in other embodiments, the first base substrate 250 may include any plurality of the first SIWs 260, including two first SIWs 260, three first SIWs 260, or even four or more first SIWs 260. In embodiments, the first base substrate 250 may include only one first SIW 260.

[0093] In embodiments, the first base substrate 250 may be attached to the circuit board bottom layer 200 and / or the source circuit board 110 by an adhesive (for example, an organic adhesive), soldering, ambient temperature laser welding, laser sintering, optical contacting (for example, wringing), thermal diffusion bonding between metal layers, and / or any other attachment mechanisms, as are known in the art. In embodiments wherein the first base substrate 250 and the source circuit board 110 or the circuit board bottom layer 200 are attached by an adhesive, the adhesive may be applied, in embodiments, by roller, inkjet, spraying, precut adhesive films, or any combination thereof.

[0094] In embodiments, the first base substrate 250 may be formed, partially or wholly, from one or more dielectric materials. In embodiments, a dielectric material forming, partially or wholly, the first base substrate 250 may include a glass (including, in embodiments, any, some, or all of lithium potassium borosilicate glass, silica glass, an ion-exchanged glass, and / or an inorganic glass), a ceramic (including, in embodiments, any, some, or all of a polycrystallineceramic, a polycrystalline inorganic material, a polycrystalline aluminum oxide, alumina, and / or silica), a glass-ceramic (including, in embodiments, Coming 9606® cordierite glassceramic), a polymer, (including, in embodiments, polycarbonate,, ceramic-filled PTFE composites, and / or Topas®), a polycrystalline ceramic, a single crystal ceramic (including, in embodiments, sapphire), and / or any combination thereof. In embodiments, a dielectric material forming, partially or wholly, the first base substrate 250 may include an organic material and / or an inorganic material. In embodiments, the first base substrate 250 may be formed, partially or wholly, from a plurality of dielectric materials, and, in certain such embodiments, the plurality of dielectric materials may include a plurality of organic materials, a plurality of inorganic materials, and / or any combination of one or more organic materials and one or more inorganic materials. In embodiments wherein the first base substrate 250 is formed, partially or wholly, from a plurality of dielectric materials, the plurality of dielectric materials may form individual layers of the first base substrate 250. In embodiments, one or more laminates may be applied to the first base substrate 250 to, for example, decrease a dielectric permittivity of the first base substrate 250.

[0095] Referring to FIGS. 2C-2D, in embodiments, the front side 112 of the circuit board bottom layer 200 includes an integrated circuit 270 (for example, a microchip or other similar structure, as are known in the art). In embodiments, integrated circuit 270 may be electrically coupled to microstrip transmission lines 271, which each may be electrically coupled to a respective one of the source electromagnetic wave transmission elements 261 such that the microstrip transmission lines 271 may propagate and / or receive an electromagnetic wave to and / or from the respective one of the source electromagnetic wave transmission elements 261 via a respective one of the first SIWs 260. In embodiments, rather than having the microstrip transmission lines 271, the integrated circuit 270 may instead be electrically coupled to the source electromagnetic wave transmission elements 261 by other mechanisms, such as, for example, grounded coplanar waveguides.

[0096] Referring to FIGS. 3A-3B, the circuit board top layer 300 defines waveguide channels 310 (that is to say, the circuit board top layer 300 forms the waveguide channel 310 as a gap within the circuit board top layer 300). In embodiments, each of the waveguide channels 310 may be positioned such that, when the circuit board layers 200, 300 are attached, the waveguide channels 310 are each positioned about a respective one of the source electromagnetic wave transmission elements 261. Accordingly, in embodiments, the waveguide channels 310 may function as a connection mechanism (for example, couplers)which may electrically couple the source electromagnetic wave transmission elements 261 to other electromagnetic wave transmission elements, such as electromagnetic wave transmission elements of the antenna package 120 (for example, first package electromagnetic wave transmission elements 421 A, as depicted in FIGS. 4A-4B and described in further detail below), such that the source electromagnetic wave transmission elements 261 may propagate and / or receive electromagnetic waves to and / or from such other electromagnetic wave transmission elements. Accordingly, such electromagnetic waves may radiate through the waveguide channels 310 between the source electromagnetic wave transmission elements 261 and such other electromagnetic wave transmission elements, and the waveguide channels 310, thereby guide such electromagnetic waves, reducing, for example, electrical loss of the electromagnetic waves between the source electromagnetic wave transmission elements 261 and such other electromagnetic wave transmission elements. The waveguide channels 310 may thereby function as waveguides for electromagnetic waves between the source electromagnetic wave transmission elements 261 and other electromagnetic wave transmission elements.

[0097] In embodiments, the waveguide channels 310 may be hollow waveguides. In embodiments, the waveguide channels 310 may be rectangular or substantially rectangular waveguides (as described in further detail below, with respect to FIG. 3C). In embodiments, the waveguide channels 310 may be gaps in the circuit board top layer 300. In embodiments, the circuit board top layer 300 may comprise a metal plating about walls of the waveguide channels 310. In embodiments, the waveguide channels 310 may be milled slots in the circuit board top layer 300.

[0098] Referring to FIG. 3C, an exemplary one of the first SIWs 260 on the rear side 114 of the first base substrate 250 may be defined by vias 262, including a first plurality of vias 262A (arranged as a first row, for example, linearly) and a second plurality of vias 262B (arranged as a second row, for example, linearly), wherein the first plurality of vias 262A and the second plurality of vias 262B define an interior spacing (w) between interior edges of the pluralities of vias 262A, 262B. In embodiments, each of the first SIWs 260 of FIGS. 2A-2B may be substantially similar to the exemplary first SIW 260 depicted in FIG. 3C. However, as described elsewhere herein, any, some, or all of the first SIWs 260 of FIGS. 2A-2B may differ from the exemplary first SIW 260 depicted in FIG. 3C by, for example, having differing numbers of the vias 262, having differing numbers of source electromagnetic wave transmission elements 261 positioned between the vias 262, and / or in other aspects, as described elsewhere herein. In embodiments, any, some, or all of the vias 262 may extend atleast partially through the first base substrate 250. In embodiments, any, some, or all of the vias 262 may extend wholly through the first base substrate 250. In the embodiment of FIG. 3C, the vias 262 are arranged in two rows (for example, the first plurality of vias 262A and the second plurality of vias 262B). However, in other embodiments, the vias 262 may be arranged into any number of rows, including, in embodiments, three rows, four rows, or even five or more rows. In the embodiment of FIG. 3C, the first SIW 260 includes 27 vias. However, in other embodiments, the first SIW 260 may instead include 10 or more vias 262, 100 or more vias 262, 250 or more vias 262, 500 or more vias 262, or even 1,000 or more vias 262.

[0099] In the embodiment of FIGS. 2A-2B and 3C, each of the first SIWs 260 has only one source electromagnetic wave transmission element 261 positioned between the vias 262 of each of the first SIWs 260. However, in other embodiments, any, some, or all of the first SIWs 260 may have a plurality of source electromagnetic wave transmission elements 261 positioned between the vias 262 of each of the first SIW 260. In embodiments, any, some, or all of the first SIWs 260 may have differing numbers of source electromagnetic wave transmission elements 261 positioned between the vias 262 of each of the first SIWs 260.

[0100] In embodiments, the first SIWs 260 may propagate and / or be configured to propagate an electromagnetic wave comprising a frequency ( / ) and a vacuum wavelength ( / .). In embodiments, the first SIW 260 may propagate and / or be configured to propagate the electromagnetic wave along and / or parallel to a first waveguide length ( / ) between each of the pluralities of vias 262A, 262B, wherein the first waveguide length ( / ) of the first SIW 260 extends along a propagation direction of the electromagnetic wave through the first SIW 260. In embodiments having more than two rows of the vias 262, each additional row of the vias 262 may further define an additional waveguide along which an additional electromagnetic wave may be propagated.

[0101] In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 100 MHz (megahertz), 300 MHz, 3 GHz (gigahertz), greater than or equal to 30 GHz, greater than or equal to 50 GHz, greater than or equal to 100 GHz, greater than or equal to 200 GHz, or even greater than or equal to 300 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be less than or equal to 400 GHz, less than or equal to 300 GHz, less than or equal to 200 GHz, less than or equal to 100 GHz, less than or equal to 50 GHz, less than or equal to 30 GHz, less than or equal to 3 GHz, or even less than or equal to 300 MHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 100 MHz and less than or equal to 400 GHz. In embodiments, the frequency ( / ) ofthe electromagnetic wave may be greater than or equal to 100 MHz and less than or equal to 300 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 100 MHz and less than or equal to 200 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 100 MHz and less than or equal to 100 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 100 MHz and less than or equal to 50 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 100 MHz and less than or equal to 30 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 100 MHz and less than or equal to 3 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 100 MHz and less than or equal to 300 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 300 MHz and less than or equal to 400 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 300 MHz and less than or equal to 300 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 300 MHz and less than or equal to 200 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 300 MHz and less than or equal to 100 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 300 MHz and less than or equal to 50 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 300 MHz and less than or equal to 30 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 300 MHz and less than or equal to 3 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 3 GHz and less than or equal to 400 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 3 GHz and less than or equal to 300 GHz. In embodiments, the frequency ( ) of the electromagnetic wave may be greater than or equal to 3 GHz and less than or equal to 200 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 3 GHz and less than or equal to 100 GHz. In embodiments, the frequency ( ) of the electromagnetic wave may be greater than or equal to 3 GHz and less than or equal to 50 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 3 GHz and less than or equal to 30 GHz. In embodiments, the frequency ( ) of the electromagnetic wave may be greater than or equal to 30 GHz and less than or equal to 400 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 30 GHz and less than or equal to 300 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 30 GHz and less than or equal to 200GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 30 GHz and less than or equal to 100 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 30 GHz and less than or equal to 50 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 50 GHz and less than or equal to 400 GHz. In embodiments, the frequency ( ) of the electromagnetic wave may be greater than or equal to 50 GHz and less than or equal to 300 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 50 GHz and less than or equal to 200 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 50 GHz and less than or equal to 100 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 100 GHz and less than or equal to 400 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 100 GHz and less than or equal to 300 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 100 GHz and less than or equal to 200 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 200 GHz and less than or equal to 400 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 200 GHz and less than or equal to 300 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be greater than or equal to 300 GHz and less than or equal to 400 GHz. In embodiments, the frequency ( / ) of the electromagnetic wave may be within any other range within the above-described ranges, such as, in embodiments, greater than or equal to 75 GHz and less than or equal to 84 GHz.

[0102] In embodiments, the vacuum wavelength (z) of the electromagnetic wave may be greater than or equal to 1 qm, greater than or equal to 1 mm (millimeter), greater than or equal to 10 mm, greater than or equal to 50 mm, or even greater than or equal to 1 cm (centimeter). In embodiments, the vacuum wavelength (z) of the electromagnetic wave may be less than or equal to 10 cm, less than or equal to 1 cm, less than or equal to 50 mm, less than or equal to 10 mm, or even less than or equal to 1 mm. In embodiments, the vacuum wavelength (z) of the electromagnetic wave may be greater than or equal to 1 qm and less than or equal to 10 cm. In embodiments, the vacuum wavelength (z) of the electromagnetic wave may be greater than or equal to 1 qm and less than or equal to 1 cm. In embodiments, the vacuum wavelength (z) of the electromagnetic wave may be greater than or equal to 1 qm and less than or equal to 50 mm. In embodiments, the vacuum wavelength (2) of the electromagnetic wave may be greater than or equal to 1 qm and less than or equal to 10 mm.In embodiments, the vacuum wavelength (z) of the electromagnetic wave may be greater than or equal to 1 gm and less than or equal to 1 mm. In embodiments, the vacuum wavelength (z) of the electromagnetic wave may be greater than or equal to 1 mm and less than or equal to 10 cm. In embodiments, the vacuum wavelength (z) of the electromagnetic wave may be greater than or equal to 1 mm and less than or equal to 1 cm. In embodiments, the vacuum wavelength (z) of the electromagnetic wave may be greater than or equal to 1 mm and less than or equal to 50 mm. In embodiments, the vacuum wavelength (z) of the electromagnetic wave may be greater than or equal to 1 mm and less than or equal to 10 mm. In embodiments, the vacuum wavelength (z) of the electromagnetic wave may be greater than or equal to 10 mm and less than or equal to 10 cm. In embodiments, the vacuum wavelength (z) of the electromagnetic wave may be greater than or equal to 10 mm and less than or equal to 1 cm. In embodiments, the vacuum wavelength (z) of the electromagnetic wave may be greater than or equal to 10 mm and less than or equal to 50 mm. In embodiments, the vacuum wavelength (z) of the electromagnetic wave may be greater than or equal to 50 mm and less than or equal to 10 cm. In embodiments, the vacuum wavelength (z) of the electromagnetic wave may be greater than or equal to 50 mm and less than or equal to 1 cm. In embodiments, the vacuum wavelength (z) of the electromagnetic wave may be greater than or equal to 1 cm and less than or equal to 10 cm. In embodiments, the vacuum wavelength (z) of the electromagnetic wave may be within any other range within the above-described ranges.

[0103] Referring still to FIG. 3C, in embodiments, the vias 262 define a via spacing (p) (for example, a pitch of the first SIW 260), which is the distance between each via of the vias 262 and each via, of the same row (for example, the first plurality of vias 262A or the second plurality of vias 262B), that neighbors the via of the vias 262. For example, the via spacing (p) can be the distance between the center of a via and the center of an adjacent via of the same row (e.g., a center-to-center distance). In embodiments, the via spacing (p) may be substantially constant between distinct rows of vias. For example, in the embodiment of FIG. 3C, the via spacing (p) defined by the first plurality of vias 262A may be substantially equal to the via spacing (p) defined by the second plurality of vias 262B. However, in other embodiments, the via spacing (p) may not be substantially constant across distinct rows of vias. For example, in embodiments, the first plurality of vias 262A may define a via spacing (p) of differing length than a via spacing (p) defined by the second plurality of vias 262B. Further, in embodiments, a via spacing (p) of vias of other SIWs of the first SIWs 260 (as depicted in, for example, FIGS. 2A-2D) may differ between such SIWs of the first SIWs 260.

[0104] In embodiments, the via spacing (p) may be greater than or equal to 50 pm, greater than or equal to 100 pm, greater than or equal 250 pm, greater than or equal to 500 pm, or even greater than or equal to 750 pm. In embodiments, the via spacing (p) may be less than or equal to 1 mm, less than or equal to 750 pm, less than or equal to 500 pm, less than or equal to 250 pm, or even less than or equal to 100 pm. In embodiments, the via spacing (p) may be greater than or equal to 50 pm and less than or equal to 1 mm. In embodiments, the via spacing (p) may be greater than or equal to 50 pm and less than or equal to 750 pm. In embodiments, the via spacing (p) may be greater than or equal to 50 pm and less than or equal to 500 pm. In embodiments, the via spacing (p) may be greater than or equal to 50 pm and less than or equal to 250 pm. In embodiments, the via spacing (p) may be greater than or equal to 50 pm and less than or equal to 100 pm. In embodiments, the via spacing (p) may be greater than or equal to 100 pm and less than or equal to 1 mm. In embodiments, the via spacing (p) may be greater than or equal to 100 pm and less than or equal to 750 pm. In embodiments, the via spacing (p) may be greater than or equal to 100 pm and less than or equal to 500 pm. In embodiments, the via spacing (p) may be greater than or equal to 100 pm and less than or equal to 250 pm. In embodiments, the via spacing (p) may be greater than or equal to 250 pm and less than or equal to 1 mm. In embodiments, the via spacing (p) may be greater than or equal to 250 pm and less than or equal to 750 pm. In embodiments, the via spacing (p) may be greater than or equal to 250 pm and less than or equal to 500 pm. In embodiments, the via spacing (p) may be greater than or equal to 500 pm and less than or equal to 1 mm. In embodiments, the via spacing (p) may be greater than or equal to 500 pm and less than or equal to 750 pm. In embodiments, the via spacing (p) may be greater than or equal to 750 pm and less than or equal to 1 mm. In embodiments, the via spacing (p) may be within any other range of the above-described ranges.

[0105] Referring still to FIG. 3C, in embodiments, the vias 262 define a first waveguide width (a) of the first SIW 260, wherein the first waveguide width (a) of the first SIW 260 is a distance between the centers of vias of adjacent rows (for example, a distance between a center of a via of the first plurality of vias 262 A and a center of an adjacent via of the second plurality of vias 262B). For example, the waveguide width (a) can be the distance between an axis of one row of vias (e.g., a line passing through the center of each via in the row of vias) and an axis of an adjacent row of vias. Accordingly, in embodiments, the first waveguide width (a) of the first SIW 260 separates the first plurality of vias 262A from the second plurality of vias 262B. In embodiments, a waveguide width (a) of other SIWs of the first SIWs 260 (as depicted in, for example, FIGS. 2A-2D) may differ between such SIWs of the first SIWs 260.

[0106] In embodiments, the first waveguide width (a) of the first SIW 260 may be substantially equal to half of a vacuum wavelength (z) of an electromagnetic wave propagated by the first SIW 260. In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to half of vacuum wavelength (z) of an electromagnetic wave propagated by the first SIW 260 minus 0.05 mm and less than or equal to half the vacuum wavelength (z) of the electromagnetic wave propagated by the first SIW 260 plus 0.05 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to half of a vacuum wavelength (z) of an electromagnetic wave propagated by the first SIW 260 minus 0.1 mm and less than or equal to half the vacuum wavelength (z) plus 0.1 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to half of a vacuum wavelength (z) of an electromagnetic wave propagated by the first SIW 260 minus 0.15 mm and less than or equal to half the vacuum wavelength (2) plus 0.15 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to half of a vacuum wavelength (z) of an electromagnetic wave propagated by the first SIW 260 minus 0.2 mm and less than or equal to half the vacuum wavelength (2) plus 0.2 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to half of a vacuum wavelength (2) of an electromagnetic wave propagated by the first SIW 260 minus 0.25 mm and less than or equal to half the vacuum wavelength (2) plus 0.25 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be within any other range of the above-described ranges.

[0107] In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to 0. 1 mm, greater than or equal to 0.5 mm, greater than or equal to 1 mm, greater than or equal to 2.5 mm, or even greater than or equal to 5 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be less than or equal to 10 mm, less than or equal to 5 mm, less than or equal to 2.5 mm, less than or equal to 1 mm, or even less than or equal to 0.5 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to 0. 1 mm and less than or equal to 10 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to 0.1 mm and less than or equal to 5 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to 0.1 mm and less than or equal to 2.5 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to 0.1 mm and less than or equal to 1 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to 0.1 mm and less than or equal to 0.5 mm. In embodiments, the firstwaveguide width (a) of the first SIW 260 may be greater than or equal to 0.5 mm and less than or equal to 10 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to 0.5 mm and less than or equal to 5 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to 0.5 mm and less than or equal to 2.5 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to 0.5 mm and less than or equal to 1 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to 1 mm and less than or equal to 10 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to 1 mm and less than or equal to 5 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to 1 mm and less than or equal to 2.5 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to 2.5 mm and less than or equal to 10 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to 2.5 mm and less than or equal to 5 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be greater than or equal to 2.5 mm and less than or equal to 5 mm. In embodiments, the first waveguide width (a) of the first SIW 260 may be within any other range of the above-described ranges.

[0108] Referring still to FIG. 3C, in embodiments, each of the vias 262 comprise a via diameter (d). In embodiments, the via diameter (d) may be substantially constant for each of the vias 262. In embodiments, the via diameter (d) may differ between any, some, or all of the vias 262. In embodiments, the via diameter (d) may be substantially equal for vias of distinct rows of vias. For example, in the embodiment of FIG. 3C, a via diameter (d) of the vias 262 of the first plurality of vias 262A may be substantially equal to a via diameter (d) of the vias 262 of the second row of vias 262B. However, in other embodiments, the via diameter (d) may not be substantially equal for vias of distinct rows of vias. For example, a via diameter (d) of the vias 262 of the first plurality of vias 262A may differ from a via diameter (d) of the vias 262 of the second plurality of vias 262B. Further, in embodiments, a via diameter (d) of vias of other SIWs of the first SIWs 260 (as depicted in, for example, FIGS. 2A-2D) may differ between such SIWs of the first SIWs 260.

[0109] In embodiments, the via diameter (d) may be greater than or equal to 1 pm, greater than or equal to 10 pm, greater than or equal to 25 pm, greater than or equal to 50 pm, greater than or equal to 75 pm, greater than or equal to 100 pm, or even greater than or equal to 250 pm. In embodiments, the via diameter (d) may be less than or equal to 500 pm, lessthan or equal to 250 qm, less than or equal to 100 qm, less than or equal to 75 qm, less than or equal to 50 qm, less than or equal to 25 qm, or even less than or equal to 10 qm. In embodiments, the via diameter (d) may be greater than or equal to 1 qm and less than or equal to 500 qm. In embodiments, the via diameter (<7) may be greater than or equal to 1 qm and less than or equal to 250 qm. In embodiments, the via diameter (<7) may be greater than or equal to 1 qm and less than or equal to 100 qm. In embodiments, the via diameter (<7) may be greater than or equal to 1 qm and less than or equal to 75 qm. In embodiments, the via diameter (d) may be greater than or equal to 1 qm and less than or equal to 50 qm. In embodiments, the via diameter (d) may be greater than or equal to 1 qm and less than or equal to 25 qm. In embodiments, the via diameter (d) may be greater than or equal to 1 qm and less than or equal to 10 qm. In embodiments, the via diameter (d) may be greater than or equal to 10 qm and less than or equal to 500 qm. In embodiments, the via diameter (d) may be greater than or equal to 10 qm and less than or equal to 250 qm. In embodiments, the via diameter (d) may be greater than or equal to 10 qm and less than or equal to 100 qm. In embodiments, the via diameter (d) may be greater than or equal to 10 qm and less than or equal to 75 qm. In embodiments, the via diameter (d) may be greater than or equal to 10 qm and less than or equal to 50 qm. In embodiments, the via diameter (d) may be greater than or equal to 10 qm and less than or equal to 25 qm. In embodiments, the via diameter (d) may be greater than or equal to 25 qm and less than or equal to 500 qm. In embodiments, the via diameter (d) may be greater than or equal to 25 qm and less than or equal to 250 qm. In embodiments, the via diameter (d) may be greater than or equal to 25 qm and less than or equal to 100 qm. In embodiments, the via diameter (d) may be greater than or equal to 25 qm and less than or equal to 75 qm. In embodiments, the via diameter (d) may be greater than or equal to 25 qm and less than or equal to 50 qm. In embodiments, the via diameter (d) may be greater than or equal to 50 qm and less than or equal to 500 qm. In embodiments, the via diameter (d) may be greater than or equal to 50 qm and less than or equal to 250 qm. In embodiments, the via diameter (d) may be greater than or equal to 50 qm and less than or equal to 100 qm. In embodiments, the via diameter (d) may be greater than or equal to 50 qm and less than or equal to 75 qm. In embodiments, the via diameter (d) may be greater than or equal to 75 qm and less than or equal to 500 qm. In embodiments, the via diameter (d) may be greater than or equal to 75 qm and less than or equal to 250 qm. In embodiments, the via diameter (d) may be greater than or equal to 75 qm and less than or equal to 100 qm. In embodiments, the via diameter (d) may be greater than or equal to 100 qm and less than or equal to 500 qm. In embodiments, the via diameter (d) may be greater than or equal to 100 qm and less than or equal to 250 qm. In embodiments, the viadiameter (d) may be greater than or equal to 250 pm and less than or equal to 500 pm. In embodiments, the via diameter ( ) may be within any other range within the above-described ranges.

[0110] Referring still to FIG. 3C, the respective waveguide channel 310 of the first SIW 260 depicted in FIG. 3C is depicted in an overlay. Accordingly, since the waveguide channel 310 may not, in the embodiment of FIG. 3C, be formed from the first base substrate 250, the waveguide channel 310 is depicted with dashed lines. The waveguide channel 310 may be positioned about the source electromagnetic wave transmission element 261 such that the waveguide channel 310 may guide an electromagnetic wave to and / or from the first SIW 260 by extending from the rear side 114 of the source circuit board 110 (for example, in embodiments, through the circuit board top layer 300) toward the front side 112 of the source circuit board 110 such that the waveguide channel 310 extends to the first base substrate 250. However, in embodiments (such as, for example, embodiments wherein the source circuit board 110 does not include the circuit board top layer 300), the waveguide channel 310 may be formed from, instead, another layer, such as, in embodiments, the waveguide layer 400.

[0111] The waveguide channel 310 defines a channel length (lc) and a channel width (wc). In the embodiment of FIG. 3C, the channel length (lc) runs parallel to the first waveguide length (Z) of the first SIW 260. However, in other embodiments, the channel length (lc) may only run substantially parallel to the first waveguide length (Z) of the first SIW 260. Nonetheless, in embodiments, the waveguide channel 310, importantly, may be substantially rectangular in shape and positioned such that the channel length (lc) may not be substantially perpendicular to the first waveguide length (Z) of the first SIW 260. That is to say, in embodiments, the channel length (lc) may be both greater than the channel width (wc) and greater than the first waveguide width (a) of the first SIW 260. However, to be “substantially rectangular in shape,” as described herein, should not be construed as requiring the waveguide channel 310 as being defined exclusively by four linear edges. Rather, as can be seen in FIG. 3C, the waveguide channel 310, instead, has rounded edges. To that effect, in embodiments, the shape of the waveguide channel 310 may be limited only by the channel length (lc) being greater than the channel width (wc).

[0112] In embodiments, the channel length (lc) may be greater than or equal to 2 mm, greater than or equal to 2.2 mm, greater than or equal to 2.4 mm, greater than or equal to 2.6 mm, greater than or equal to 2.8 mm, or even greater than or equal to 2.9 mm. In embodiments, the channel length (lc) may be less than or equal to 4 mm, less than or equal to 3.8 mm, lessthan or equal to 3.6 mm, less than or equal to 3.4 mm, less than or equal to 3.2 mm, or even less than or equal to 3. 1 mm. In embodiments, the channel length (lc) may be greater than or equal to 2 mm and less than or equal to 4 mm. In embodiments, the channel length (lc) may be greater than or equal to 2 mm and less than or equal to 3.8 mm. In embodiments, the channel length (lc) may be greater than or equal to 2 mm and less than or equal to 3.6 mm. In embodiments, the channel length (lc) may be greater than or equal to 2 mm and less than or equal to 3.4 mm. In embodiments, the channel length (lc) may be greater than or equal to 2 mm and less than or equal to 3.2 mm. In embodiments, the channel length (lc) may be greater than or equal to 2 mm and less than or equal to 3. 1 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.2 mm and less than or equal to 4 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.2 mm and less than or equal to 3.8 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.2 mm and less than or equal to 3.6 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.2 mm and less than or equal to 3.4 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.2 mm and less than or equal to 3.2 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.2 mm and less than or equal to 3.1 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.4 mm and less than or equal to 4 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.4 mm and less than or equal to 3.8 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.4 mm and less than or equal to 3.6 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.4 mm and less than or equal to 3.4 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.4 mm and less than or equal to 3.2 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.4 mm and less than or equal to 3.1 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.6 mm and less than or equal to 4 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.6 mm and less than or equal to 3.8 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.6 mm and less than or equal to 3.6 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.6 mm and less than or equal to 3.4 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.6 mm and less than or equal to 3.2 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.6 mm and less than or equal to 3.1 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.8 mm and less than or equal to 4 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.8 mm and less than or equal to 3.8 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.8 mm and less than orequal to 3.6 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.8 mm and less than or equal to 3.4 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.8 mm and less than or equal to 3.2 mm. In embodiments, the channel length (L) may be greater than or equal to 2.8 mm and less than or equal to 3.1 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.9 mm and less than or equal to 4 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.9 mm and less than or equal to 3.8 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.9 mm and less than or equal to 3.6 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.9 mm and less than or equal to 3.4 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.9 mm and less than or equal to 3.2 mm. In embodiments, the channel length (lc) may be greater than or equal to 2.9 mm and less than or equal to 3. 1 mm. In embodiments, the channel length (lc) may be within any other range of the above-described ranges.

[0113] In embodiments, the channel width (wc) may be greater than or equal to 0.5 mm, greater than or equal to 0.75 mm, greater than or equal to 1 mm, greater than or equal to 1.2 mm, or even greater than or equal to 1.4 mm. In embodiments, the channel width (wc) may be less than or equal to 2.5 mm, less than or equal to 2.25 mm, less than or equal to 2 mm, less than or equal to 1.8 mm, or even less than or equal to 1.6 mm. In embodiments, the channel width (wc) may be greater than or equal to 0.5 mm and less than or equal to 2.5 mm. In embodiments, the channel width (wc) may be greater than or equal to 0.5 mm and less than or equal to 2.25 mm. In embodiments, the channel width (wc) may be greater than or equal to 0.5 mm and less than or equal to 2 mm. In embodiments, the channel width (wc) may be greater than or equal to 0.5 mm and less than or equal to 1.8 mm. In embodiments, the channel width (wc) may be greater than or equal to 0.5 mm and less than or equal to 1.6 mm. In embodiments, the channel width (wc) may be greater than or equal to 0.75 mm and less than or equal to 2.5 mm. In embodiments, the channel width (wc) may be greater than or equal to 0.75 mm and less than or equal to 2.25 mm. In embodiments, the channel width (wc) may be greater than or equal to 0.75 mm and less than or equal to 2 mm. In embodiments, the channel width (wc) may be greater than or equal to 0.75 mm and less than or equal to 1.8 mm. In embodiments, the channel width (wc) may be greater than or equal to 0.75 mm and less than or equal to 1.6 mm. In embodiments, the channel width (wc) may be greater than or equal to 1 mm and less than or equal to 2.5 mm. In embodiments, the channel width (wc) may be greater than or equal to 1 mm and less than or equal to 2.25 mm. In embodiments, the channel width (wc) may be greaterthan or equal to 1 mm and less than or equal to 2 mm. In embodiments, the channel width (wc) may be greater than or equal to 1 mm and less than or equal to 1 .8 mm. In embodiments, the channel width (wc) may be greater than or equal to 1 mm and less than or equal to 1.6 mm. In embodiments, the channel width (wc) may be greater than or equal to 1.2 mm and less than or equal to 2.5 mm. In embodiments, the channel width (wc) may be greater than or equal to 1.2 mm and less than or equal to 2.25 mm. In embodiments, the channel width (wc) may be greater than or equal to 1.2 mm and less than or equal to 2 mm. In embodiments, the channel width (wc) may be greater than or equal to 1.2 mm and less than or equal to 1.8 mm. In embodiments, the channel width (wc) may be greater than or equal to 1.2 mm and less than or equal to 1.6 mm. In embodiments, the channel width (wc) may be greater than or equal to 1.4 mm and less than or equal to 2.5 mm. In embodiments, the channel width (wc) may be greater than or equal to 1.4 mm and less than or equal to 2.25 mm. In embodiments, the channel width (wc) may be greater than or equal to 1.4 mm and less than or equal to 2 mm. In embodiments, the channel width (wc) may be greater than or equal to 1.4 mm and less than or equal to 1.8 mm. In embodiments, the channel width (wc) may be greater than or equal to 1.4 mm and less than or equal to 1.6 mm. In embodiments, the channel width (wc) may be within any other range of the above-described ranges.

[0114] Accordingly, in embodiments, the waveguide channel 310 may enable the first SIW 260 to have a smaller first waveguide width (a) than alternative potential waveguide widths of alternative potential SIWs which may be coupled to waveguide channels which have channel lengths which may be substantially perpendicular to waveguide lengths ( / ) of such an alternative potential SIWs. Accordingly, the size of the first SIW 260 may be reduced (by reducing, for example, the first waveguide width (a) of the first SIW 260 to a magnitude within a range such as, for example, any, some, or all of the ranges of those described above). By reducing a size of the first SIW 260, in embodiments, a size of the first base substrate 250 may also be reduced. By reducing a size of the first base substrate 250, in embodiments, a cost of manufacturing the first base substrate 250 (and, thereby, for example, a cost of manufacturing the source circuit board 110 and / or the circuit board bottom layer 200) may similarly be reduced. Further, in embodiments, the waveguide channel 310 may reduce electrical loss of an electromagnetic wave propagated and / or received by the first SIW 260 and / or the source electromagnetic wave transmission element 261 by functioning as a waveguide guiding the electromagnetic wave to and / or from the first SIW 260. Finally, in embodiments, the waveguide channel 310 may enable the integrated digital RF circuit system 100 to bemanufactured without the insertion of layers between the source circuit board 110 and the antenna package 120 (such as, for example, redistribution layers, connectors, or jumpers between the source circuit board 110 and the antenna package 120) because the waveguide channel 310 may itself provide a coupling mechanism between the source circuit board 110 and the antenna package 120.

[0115] In embodiments, the waveguide channel 310 may be positioned at least partially between the first plurality of vias 262A and the second plurality of vias 262B. In the embodiment of FIG. 3C, the waveguide channel 310 is depicted as being positioned wholly between the pluralities of vias 262A, 262B (that is to say, within the interior spacing (w)). However, in other embodiments, the waveguide channel 310 may have an alternative size, position, or orientation such that the waveguide channel 310 overlaps with any, some, or all of the vias 262. In embodiments, the waveguide channel 310 may have any size, position, or orientation such that the waveguide channel 310 may be positioned about the source electromagnetic wave transmission element 261 and has a size such that the channel length (lc) may be greater than the channel width (wc). Since, in embodiments, the channel width (wc) runs parallel or substantially parallel to the first waveguide length ( / ) of the first SIW 260, this orientation of the waveguide channel 310 may, in embodiments, enable the source electromagnetic wave transmission element 261 to similarly run parallel or substantially parallel to the first waveguide length (Z) of the first SIW 260.

[0116] In embodiments, to propagate an electromagnetic wave to and / or from the first SIW 260 and / or the source electromagnetic wave transmission element 261 (when compared to, for example, alternative SIWs and / or electromagnetic wave transmission elements wherein the electromagnetic wave transmission element and / or a waveguide channel may not be oriented substantially parallel to the first waveguide length (Z) of the first SIW 260), a polarization of an electromagnetic wave propagated or received by the first SIW 260 and / or the source electromagnetic wave transmission element 261 may be rotated to account for the orientation of the source electromagnetic wave transmission element 261 and / or of the waveguide channel 310. Further, in embodiments, an electromagnetic wave propagated by another SIW and / or other electromagnetic wave transmission element and received by the first SIW 260 and / or the source electromagnetic wave transmission element 261 may similarly be rotated in polarization to account for the orientation of the source electromagnetic wave transmission element 261 and / or of the waveguide channel 310.

[0117] Referring to FIG. 4A, the waveguide layer 400 includes a second base substrate 410. In embodiments, the waveguide layer 400 may include no additional layers or substrates besides the second base substrate 410. However, in other embodiments, the waveguide layer 400 may include additional layers or substrates not depicted in FIG. 4A. For example, in embodiments, the waveguide layer 400 may define (that is to say, form the waveguide channel 310 as a gap within the waveguide layer 400) the waveguide channels 310 or include an additional layer defining (that is to say, form the waveguide channel 310 as a gap within the additional layer of the waveguide layer 400) the waveguide channels 310, and, in certain such embodiments, the source circuit board 110 may not include the circuit board top layer 300 or define the waveguide channels 310. In embodiments, the waveguide channels 310 may be gaps in the waveguide layer 400 or a layer of the waveguide layer 400. In embodiments, the waveguide layer 400 may comprise a metal plating about walls of the waveguide channels 310. In embodiments, the waveguide channels 310 may be milled slots in the waveguide layer 400.

[0118] The second base substrate 410 includes second SIWs 420. Each of the second SIWs 420 includes a first package electromagnetic wave transmission element 421 A which may, in embodiments, propagate and / or receive one or more electromagnetic waves to and / or from the source circuit board 110 (via, for example, respective ones of the source electromagnetic wave transmission elements 261). In embodiments, the second SIWs 420 may propagate and / or receive one or more electromagnetic waves to and / or from respective ones of the first package electromagnetic wave transmission elements 421 A from or to respective second package electromagnetic wave transmission elements 42 IB. The second package electromagnetic wave transmission elements 42 IB may thereby propagate and / or receive such electromagnetic wave(s) to and / or from other wave transmission elements, such as, for example, antenna elements of the antenna layer 500 (for example, as depicted in FIG. 5 and described in further detail below). Accordingly, the waveguide layer 400, the second SIWs 420, and the package electromagnetic wave transmission elements 421 A, 42 IB may, in embodiments, thereby electrically couple any, some, or all of the source circuit board 110, the integrated circuit 270, respective SIWs of the first SIWs 260, and / or respective ones of the source electromagnetic wave transmission elements 261 such that one or more electromagnetic waves may be transmitted there between. In embodiments, the first package electromagnetic wave transmission elements 421 A may include, for example, grounded coplanar waveguides, microstrip transmission lines, patch elements (for example, patch antennas), slot antennas, an RF chip, or any combination thereof. In embodiments, the second package electromagneticwave transmission elements 42 IB may include, for example, grounded coplanar waveguides, microstrip transmission lines, patch elements (for example, patch antennas), slot antennas, an RF chip, or any combination thereof.

[0119] In the embodiment of FIG. 4A, the second base substrate 410 includes 7 secondSIWs 420. However, in other embodiments, the second base substrate 410 may include any plurality of the second SIWs 420, including two second SIWs 420, three second SIWs 420, or even four or more second SIWs 420. In embodiments, the second base substrate 410 may include only one second SIW 420. In embodiments, the second base substrate 410 may include a number of the second SIWs 420 equal to a number of the first SIWs 260 of the first base substrate 260.

[0120] In the embodiment of FIG. 4A, each of the second SIWs 420 includes only one first package electromagnetic wave transmission element 421 A positioned between the vias 422 (as depicted in FIG. 4B and described in further detail below) of each of the second SIWs 420. However, in other embodiments, each of the second SIWs 420 may include a plurality of first package electromagnetic wave transmission elements 421 A positioned between the vias 422 of each of the second SIWs 420, such as, for example, two first package electromagnetic wave transmission elements 421 A, three first package electromagnetic wave transmission elements 421 A, or even four or more first package electromagnetic wave transmission elements421 A. In embodiments, any, some, or all of the second SIWs 420 may have differing numbers of first package electromagnetic wave transmission elements 421 A positioned between the vias422 of each of the second SIWs 420.

[0121] In the embodiment of FIG. 4A, each of the second SIWs 420 includes six second package electromagnetic wave transmission element 42 IB positioned between the vias 422 (as depicted in FIG. 4B and described in further detail below) of each of the second SIWs 420. However, in other embodiments, each of the second SIWs 420 may include any plurality of second package electromagnetic wave transmission elements 42 IB positioned between the vias 422 of each of the second SIWs 420, such as, for example, two second package electromagnetic wave transmission elements 42 IB, three second package electromagnetic wave transmission elements 42 IB, or even four or more second package electromagnetic wave transmission elements 42 IB. In embodiments, each of the second SIWs 420 may include only one second package electromagnetic wave transmission element 42 IB positioned between the vias 422 of each of the second SIWs 420. In embodiments, any, some, or all of the second SIWs 420 mayhave differing numbers of second package electromagnetic wave transmission elements 42 IB positioned between the vias 422 of each of the second SIWs 420.

[0122] Accordingly, in embodiments, each of the waveguide channels 310 may be positioned such that, when the source circuit board 110 and the waveguide layer 400 are attached, the waveguide channels 310 are each positioned about a respective one of the first package electromagnetic wave transmission elements 421 A. Accordingly, in embodiments, the waveguide channels 310 may function as a connection mechanism (for example, couplers) which may electrically couple the first package electromagnetic wave transmission elements 421 A to other electromagnetic wave transmission elements, such as the source electromagnetic wave transmission elements 261 (for example, as depicted in FIGS. 2A-3C and described in further detail above), such that the first package electromagnetic wave transmission elements 421 A may propagate and / or receive electromagnetic waves to and / or from such other electromagnetic wave transmission elements. Accordingly, such electromagnetic waves may radiate through the waveguide channels 310 between the first package electromagnetic wave transmission elements 421 A and such other electromagnetic wave transmission elements, and the waveguide channels 310, thereby guide such electromagnetic waves, reducing, for example, electrical loss of the electromagnetic waves between the first package electromagnetic wave transmission elements 421 A and such other electromagnetic wave transmission elements. The waveguide channels 310 may thereby function as waveguides for electromagnetic waves between the first package electromagnetic wave transmission elements 421 A and other source electromagnetic wave transmission elements.

[0123] In embodiments, the second base substrate 410 may be formed, partially or wholly, from one or more dielectric materials. In embodiments, a dielectric material forming, partially or wholly, the second base substrate 410 may include a glass (including, in embodiments, any, some, or all of lithium potassium borosilicate glass, silica glass, an ion- exchanged glass, and / or an inorganic glass), a ceramic (including, in embodiments, any, some, or all of a polycrystalline ceramic, a polycrystalline inorganic material, a polycrystalline aluminum oxide, alumina, and / or silica), a glass-ceramic (including, in embodiments, Coming 9606® cordierite glass-ceramic), a polymer, (including, in embodiments, polycarbonate, ceramic-filled PTFE composites, and / or Topas®), a polycrystalline ceramic, a single crystal ceramic (including, in embodiments, sapphire), and / or any combination thereof. In embodiments, a dielectric material forming, partially or wholly, the second base substrate 410 may include an organic material and / or an inorganic material. In embodiments, the secondbase substrate 410 may be formed, partially or wholly, from a plurality of dielectric materials, and, in certain such embodiments, the plurality of dielectric materials may include a plurality of organic materials, a plurality of inorganic materials, and / or any combination of one or more organic materials and one or more inorganic materials. In embodiments wherein the second base substrate 410 is formed, partially or wholly, from a plurality of dielectric materials, the plurality of dielectric materials may form individual layers of the second base substrate 410. In embodiments, one or more laminates may be applied to the second base substrate 410 to, for example, decrease a dielectric permittivity of the second base substrate 410.

[0124] Referring to FIG. 4B, an exemplary one of the second SIWs 420 may be defined by vias 422, including a third plurality of vias 422A (arranged as a first row) and a fourth plurality of vias 422B (arranged as a second row), wherein the third plurality of vias 422A and the fourth plurality of vias 422B define an interior spacing (w) between interior edges of the pluralities of vias 422A, 422B. In embodiments, each of the second SIWs 420 of FIG. 4A may be substantially similar to the exemplary second SIW 420 depicted in FIG. 4B. However, as described elsewhere herein, any, some, or all of the second SIWs 420 of FIG. 4A may differ from the exemplary second SIW 420 depicted in FIG. 4B by, for example, having differing numbers of the vias 422, having differing numbers of first package electromagnetic wave transmission elements 421 A positioned between the vias 422, and / or in other aspects, as described elsewhere herein. In embodiments, any, some, or all of the vias 422 may extend at least partially through the second base substrate 410. In embodiments, any, some, or all of the vias 422 may extend wholly through the second base substrate 410. In the embodiment of FIG. 4B, the vias 422 are arranged in two rows (for example, the third plurality of vias 422A and the fourth plurality of vias 422B). However, in other embodiments, the vias 422 may be arranged into any number of rows, including, in embodiments, three rows, four rows, or even five or more rows. In the embodiment of FIG. 4B, the second SIW 420 includes 27 vias. However, in other embodiments, the second SIW 420 may instead include 10 or more vias 422, 100 or more vias 422, 250 or more vias 422, 500 or more vias 422, or even 1,000 or more vias 422.

[0125] In embodiments, the second SIWs 420 may propagate and / or be configured to propagate an electromagnetic wave comprising a frequency ( / ) and a vacuum wavelength ( / .). and the frequency ( / ) and the vacuum wavelength ( / .) may be within ranges such as those described above with respect to the frequencies and / or vacuum wavelengths of electromagnetic waves propagated by the first SIWs 260. In embodiments, the second SIW 420 may propagateand / or be configured to propagate the electromagnetic wave along and / or parallel to a second waveguide length ( / ) of the second SIW 420 between each of the pluralities of vias 422A, 422B, wherein the second waveguide length (Z) of the second SIW 420 extends along a propagation direction of the electromagnetic wave through the second SIW 420. In embodiments having more than two rows of the vias 422, each additional row of the vias 422 may further define an additional waveguide along which an additional electromagnetic wave may be propagated.

[0126] In embodiments, the vias 422 define a via spacing (p), similarly to the vias 262 of the first SIWs 260. In embodiments, the via spacing (p) may be substantially constant between distinct rows of vias. For example, in the embodiment of FIG. 4B, the via spacing (p) defined by the third plurality of vias 422A may be substantially equal to the via spacing (p) defined by the fourth plurality of vias 422B. However, in other embodiments, the via spacing (p) may not be substantially constant across distinct rows of vias. For example, in embodiments, the third plurality of vias 422A may define a via spacing (p) of differing length than a via spacing (p) defined by the fourth plurality of vias 422B. Further, in embodiments, a via spacing (p) of vias of other SIWs of the second SIWs 420 (as depicted in, for example, FIG. 4A) may differ between such SIWs of the second SIWs 420. In embodiments, the via spacing (p) defined by the vias 422 may be within ranges such as those described above with respect to the via spacing (p) of the first SIW 260.

[0127] In embodiments, the vias 422 define a second waveguide width (a) of the second SIW 420. Accordingly, in embodiments, the second waveguide width (a) of the second SIW 420 separates the third plurality of vias 422A from the fourth plurality of vias 422B. In embodiments, the second waveguide width (a) of the second SIW 420 may be substantially equal to half of a vacuum wavelength ( / .) of an electromagnetic wave propagated by the second SIW 420. Further, in embodiments, a waveguide width (a) of other SIWs of the second SIWs 420 (as depicted in, for example, FIGS. 2A-2D) may differ between such SIWs of the second SIWs 420. In embodiments, the second waveguide width (a) of the second SIW 420 may be within ranges such as those described above with respect to the first waveguide width (a) of first SIW 260.

[0128] In embodiments, the second waveguide width (a) of the second SIW 420 may be substantially equal to half of a vacuum wavelength ( / .) of an electromagnetic wave propagated by the second SIW 420. In embodiments, the second waveguide width (a) of the second SIW 420 may be greater than or equal to half of a vacuum wavelength ( / .) of an electromagnetic wave propagated by the second SIW 420 minus 0.05 mm and less than or equalto half the vacuum wavelength (z) plus 0.05 mm. In embodiments, the second waveguide width (a) of the second SIW 420 may be greater than or equal to half of a vacuum wavelength (z) of an electromagnetic wave propagated by the second SIW 420 minus 0.1 mm and less than or equal to half the vacuum wavelength (z) plus 0. 1 mm. In embodiments, the second waveguide width (a) of the second SIW 420 may be greater than or equal to half of a vacuum wavelength (z) of an electromagnetic wave propagated by the second SIW 420 minus 0.15 mm and less than or equal to half the vacuum wavelength (z) plus 0.15 mm. In embodiments, the second waveguide width (a) of the second SIW 420 may be greater than or equal to half of a vacuum wavelength (2) of an electromagnetic wave propagated by the second SIW 420 minus 0.2 mm and less than or equal to half the vacuum wavelength (2) plus 0.2 mm. In embodiments, the second waveguide width (a) of the second SIW 420 may be greater than or equal to half of a vacuum wavelength (2) of an electromagnetic wave propagated by the second SIW 420 minus 0.25 mm and less than or equal to half the vacuum wavelength (2) plus 0.25 mm. In embodiments, the second waveguide width (a) of the second SIW 420 may be within any other range of the above-described ranges.

[0129] In embodiments, each of the vias 422 comprise a via diameter (d). In embodiments, the via diameter ( ) may be substantially constant for each of the vias 422. In embodiments, the via diameter (d) may differ between any, some, or all of the vias 422. In embodiments, the via diameter (d) may be substantially equal for vias of distinct rows of vias. However, in other embodiments, the via diameter (d) may not be substantially equal for vias of distinct rows of vias. Further, in embodiments, a via diameter (d) of vias of other SIWs of the second SIWs 420 (as depicted in, for example, FIG. 4A) may differ between such SIWs of the second SIWs 420. In embodiments, the via diameter (d) of the vias 422 may be within ranges such as those described above with respect to the via diameter (d) vias 262.

[0130] Referring still to FIG. 4B, the respective waveguide channel 310 of the second SIW 420 depicted in FIG. 4B is depicted in an overlay. Accordingly, since the waveguide channel 310 may not, in the embodiment of FIG. 4B, be formed from the second base substrate 410, the waveguide channel 310 is depicted with dashed lines. The waveguide channel 310 may be positioned about the first package electromagnetic wave transmission element 421 A such that the waveguide channel 310 may guide an electromagnetic wave to and / or from the second SIW 420 by extending to the second base substrate 410 (for example, in embodiments, through the circuit board top layer 300 or through another layer or substrate of the waveguide layer 400) from, in embodiments, the source circuit board 110.

[0131] Accordingly, in embodiments, the waveguide channel 310 may enable the second SIW 420 to have a smaller second waveguide width (a) than alternative potential waveguide widths of alternative potential SIWs which may be coupled to waveguide channels which have channel lengths which may be substantially perpendicular to waveguide lengths ( / ) of such alternative potential SIWs. Accordingly, the size of the second SIW 420 may be reduced (by reducing, for example, the second waveguide width (a) of the second SIW 420 to a magnitude within a range such as, for example, any, some, or all of the ranges of those described above). By reducing a size of the second SIW 420, in embodiments, a size of the second base substrate 410 may also be reduced. By reducing a size of the second base substrate 410, in embodiments, a cost of manufacturing the second base substrate 410 (and, thereby, for example, a cost of manufacturing the waveguide layer 400) may similarly be reduced. Further, in embodiments, the waveguide channel 310 may reduce electrical loss of an electromagnetic wave propagated and / or received by the second SIW 420 and / or the first package electromagnetic wave transmission element 421 A by functioning as a waveguide guiding the electromagnetic wave to and / or from the second SIW 420.

[0132] In embodiments, the waveguide channel 310 may be positioned at least partially between the third plurality of vias 422A and the fourth plurality of vias 422B. In the embodiment of FIG. 4B, the waveguide channel 310 is depicted as being positioned wholly between the pluralities of vias 422A, 422B (that is to say, within the interior spacing (w)). However, in other embodiments, the waveguide channel 310 may have an alternative size, position, or orientation such that the waveguide channel 310 overlaps with any, some, or all of the vias 422. In embodiments, the waveguide channel 310 may have any size, position, or orientation such that the waveguide channel 310 may be positioned about the first package electromagnetic wave transmission element 421 A and has a size such that the channel length (lc) may be greater than the channel width (wc). Since, in embodiments, the channel width (wc) runs parallel or substantially parallel to the second waveguide length ( / ) of the second SIW 420, this orientation of the waveguide channel 310 may, in embodiments, enable the first package electromagnetic wave transmission element 421 A to similarly run parallel or substantially parallel to the second waveguide length ( / ) of the second SIW 420.

[0133] In embodiments, to propagate an electromagnetic wave to and / or from the first SIW 260 and / or the source electromagnetic wave transmission element 261 (when compared to, for example, alternative SIWs and / or electromagnetic wave transmission elements wherein the electromagnetic wave transmission element and / or a waveguide channel may not beoriented substantially parallel to the second waveguide length ( / ) of the second SIW 420), a polarization of an electromagnetic wave propagated or received by the first SIW 260 and / or the source electromagnetic wave transmission element 261 may be rotated to account for the orientation of the source electromagnetic wave transmission element 261 and / or of the waveguide channel 310. Further, in embodiments, an electromagnetic wave propagated by another SIW and / or other electromagnetic wave transmission element and received by the first SIW 260 and / or the source electromagnetic wave transmission element 261 may similarly be rotated in polarization to account for the orientation of the source electromagnetic wave transmission element 261 and / or of the waveguide channel 310.

[0134] Referring to FIGS. 3C and 4B, in embodiments, the waveguide channel 310 may be sized, oriented, and / or positioned such that the waveguide channel 310 is positioned about both the source electromagnetic wave transmission element 261 and the first package electromagnetic wave transmission element 421 A. Accordingly, in embodiments, the waveguide channel 310 may form a waveguide between the electromagnetic wave transmission elements 261, 421 A and / or the SIWs 260, 420, thereby enabling either or both of the electromagnetic wave transmission elements 261, 421 A to propagate and / or receive an electromagnetic wave to and / or from the other of the electromagnetic wave transmission elements 261, 421 A. The waveguide channel 310 may thereby provide a coupler between the electromagnetic wave transmission elements 261, 421 A and reduce electrical loss of an electromagnetic wave propagated therebetween. In embodiments, the channel length (lc) may, therefore, be greater than both the first waveguide width (a) of the first SIW 260 and the second waveguide width (a) of the second SIW 420 such that, in embodiments, the channel length (lc) runs parallel or substantially parallel to both the first waveguide length ( / ) of the first SIW 260 and the second waveguide length (Z) of the second SIW 420. Further, in embodiments, the waveguide channel 310 may be both positioned at least partially between the first plurality of vias 262A and the second plurality of vias 262B while also being positioned at least partially between the third plurality of vias 422A and the fourth plurality of vias 422B. In embodiments, the waveguide channel 310 may be both positioned wholly between the first plurality of vias 262A and the second plurality of vias 262B while also being positioned wholly between the third plurality of vias 422A and the fourth plurality of vias 422B. In embodiments, the waveguide channel 310 may be both positioned at least partially between the first plurality of vias 262A and the second plurality of vias 262B while also being positioned wholly between the third plurality of vias 422A and the fourth plurality of vias 422B. In embodiments, thewaveguide channel 310 may be both positioned wholly between the first plurality of vias 262A and the second plurality of vias 262B while also being positioned at least partially between the third plurality of vias 422 A and the fourth plurality of vias 422B.

[0135] However, in other embodiments, any, some, or all of the source circuit board 110, the antenna package 120, the circuit board bottom layer 200, the circuit board top layer 300, and / or the waveguide layer 400 may be manufactured separately of any, some, or all of such other components of the integrated digital RF circuit system 100. Accordingly, in embodiments, the waveguide channel 310 may run parallel or substantially parallel to only one of, rather than both of, the first waveguide length ( / ) of the first SIW 260 and the second waveguide length ( / ) of the second SIW 420. Accordingly, in embodiments, the waveguide channel 310 may be positioned about only the source electromagnetic wave transmission element 261 and / or the first SIW 260 such that, for example, the channel length (lc) is greater than the first waveguide width (a) of the first SIW 260. In embodiments, the waveguide channel 310 may be positioned about only the first package electromagnetic wave transmission element 421 A and / or the second SIW 420 such that, for example, the channel length (lc) is greater than the second waveguide width (a) of the second SIW 420.

[0136] Referring now to FIGS. 2A-3B and FIG. 4A, in embodiments, each of the first SIWs 260 and respective ones of the source electromagnetic wave transmission elements 261 may correspond to, and thereby propagate and / or receive an electromagnetic wave through, a respective one of the waveguide channels 310. Accordingly, in such embodiments, each of the waveguide channels 310 may be sized, oriented, and / or positioned about a respective one of the source electromagnetic wave transmission elements 261 and / or be parallel or substantially parallel to the first waveguide length ( / ) of a respective one of the first SIWs 260 such that, in embodiments, the channel length (lc) of each waveguide channel 310 is greater than the first waveguide width (a) of the respective one of the first SIWs 260. Similarly, in embodiments, each of the waveguide channels 310 may be positioned at least partially between the first plurality of vias 262A and the second plurality of vias 262B of a respective one of the first SIWs 260 and positioned at least partially between the third plurality of vias 422A and the fourth plurality of vias 422B of a respective one of the second SIWs 420. However, in embodiments, only some the first SIWs 260 and respective ones of the source electromagnetic wave transmission elements 261 may correspond to, and thereby propagate and / or receive an electromagnetic wave through, a respective one of the waveguide channels 310. Accordingly, in embodiments, each or some of the waveguide channels 310 may be sized, oriented, and / orpositioned about a respective one of the source electromagnetic wave transmission elements 261 and / or be parallel or substantially parallel to the first waveguide length ( / ) of a respective one of the first SIWs 260 such that, in embodiments, the channel length (lc) of each waveguide channel 310 is greater than the first waveguide width (a) of the respective one of the first SIWs 260. Similarly, in embodiments, some of the waveguide channels 310 may be positioned at least partially between the first plurality of vias 262A and the second plurality of vias 262B of only some of the first SIWs 260 and positioned at least partially between the third plurality of vias 422A and the fourth plurality of vias 422B of only some of the second SIWs 420. In certain such embodiments, some of the first SIWs 260 and source electromagnetic wave transmission elements 261 may not propagate or receive an electromagnetic wave through a respective one of the waveguide channels 310. Further, in embodiments, only one the first SIWs 260 and respective ones of the source electromagnetic wave transmission elements 261 may correspond to, and thereby propagate and / or receive an electromagnetic wave through, a respective one of the waveguide channels 310. Accordingly, in embodiments, only one of the waveguide channels 310 may be sized, oriented, and / or positioned about a respective one of the source electromagnetic wave transmission elements 261 and / or be parallel or substantially parallel to the first waveguide length ( / ) of a respective one of the first SIWs 260 such that, in embodiments, the channel length (lc) of each waveguide channel 310 is greater than the first waveguide width (a) of the respective one of the first SIWs 260. Similarly, in embodiments, only one of the waveguide channels 310 may be positioned at least partially between the first plurality of vias 262A and the second plurality of vias 262B of only one of the first SIWs 260 and positioned at least partially between the third plurality of vias 422A and the fourth plurality of vias 422B of only one of the second SIWs 420. In certain such embodiments, the remaining ones of the first SIWs 260 and source electromagnetic wave transmission elements 261 may not propagate or receive an electromagnetic wave through a respective one of the waveguide channels 310.

[0137] Still referring to FIGS. 2A-3B and FIG. 4A, in embodiments, each of the second SIWs 420 and respective ones of the first package electromagnetic wave transmission elements 421 A may correspond to, and thereby propagate and / or receive an electromagnetic wave through, a respective one of the waveguide channels 310. Accordingly, in such embodiments, each of the waveguide channels 310 may be sized, oriented, and / or positioned about a respective one of the first package electromagnetic wave transmission elements 421 A and / or be parallel or substantially parallel to the second waveguide length (Z) of a respective one ofthe second SIWs 420 such that, in embodiments, the channel length (lc) of each waveguide channel 310 is greater than the second waveguide width (a) of the respective one of the second SIWs 420. However, in embodiments, only some the second SIWs 420 and respective ones of the first package electromagnetic wave transmission elements 421 A may correspond to, and thereby propagate and / or receive an electromagnetic wave through, a respective one of the waveguide channels 310. Accordingly, in such embodiments, each or some of the waveguide channels 310 may be sized, oriented, and / or positioned about a respective one of the first package electromagnetic wave transmission elements 421 A and / or be parallel or substantially parallel to the second waveguide length ( / ) of a respective one of the second SIWs 420 such that, in embodiments, the channel length (lc) of each waveguide channel 310 is greater than the second waveguide width (a) of the respective one of the second SIWs 420. In certain such embodiments, some of the second SIWs 420 and first package electromagnetic wave transmission elements 421 A may not propagate or receive an electromagnetic wave through a respective one of the waveguide channels 310. Further, in embodiments, only one the second SIWs 420 and respective ones of the first package electromagnetic wave transmission elements 421 A may correspond to, and thereby propagate and / or receive an electromagnetic wave through, a respective one of the waveguide channels 310. Accordingly, in such embodiments, only one of the waveguide channels 310 may be sized, oriented, and / or positioned about a respective one of the first package electromagnetic wave transmission elements 421 A and / or be parallel or substantially parallel to the second waveguide length (Z) of a respective one of the second SIWs 420 such that, in embodiments, the channel length (lc) of each waveguide channel 310 is greater than the second waveguide width (a) of the respective one of the second SIWs 420. In certain such embodiments, the remaining ones of the second SIWs 420 and first package electromagnetic wave transmission elements 421 A may not propagate or receive an electromagnetic wave through a respective one of the waveguide channels 310.

[0138] Referring to FIG. 5, the antenna layer 500 includes antenna elements 510. In embodiments, the antenna elements 510 may be positioned on a side of the antenna layer 500 opposite a side attached to the spacer layer 450. In embodiments, the antenna elements 510 may include, for example, grounded coplanar waveguides, microstrip transmission lines, patch elements (for example, patch antennas), slot antennas, an RF chip, or any combination thereof. In embodiments, the antenna elements 510 may receive and / or transmit an electromagnetic wave into and / or from an environment. Accordingly, in embodiments, the antenna elements 510 may function as a radar device, an electromagnetic communication device (for example,with an external transceiver or receiver), or other such device which communicates or otherwise collects information by transmitting and / or receiving an electromagnetic wave to and / or from an environment or other device.

[0139] In embodiments, the antenna elements 510 may propagate and / or receive an electromagnetic wave to and / or from a respective one or more of the second package electromagnetic wave transmission elements 42 IB. Accordingly, in embodiments, the antenna elements 510 may receive one or more electromagnetic waves from the second package electromagnetic wave transmission elements 42 IB and transmit the electromagnetic wave into an environment and / or to an external device. Similarly, in embodiments, the antenna elements 510 may receive an electromagnetic wave from an environment and / or external device and transmit the electromagnetic wave to the second package electromagnetic wave transmission elements 42 IB. In embodiments, the antenna layer 500 may be formed from a glass or other optically transparent or substantially optically transparent material. Accordingly, in embodiments, one or more electromagnetic waves transmitted between the antenna elements 510 and the second package electromagnetic wave transmission elements 42 IB may propagate through both the spacer layer 450 and the antenna layer 500, as, in certain such embodiments, the antenna elements 510 may be positioned on a side of the antenna layer 500 opposite a side of the antenna layer 500 attached to the spacer layer 450.

[0140] In the embodiment of FIG. 5, the antenna layer 500 includes 48 antenna elements 510. However, in other embodiments, the antenna layer 500 may include any plurality of antenna elements 510. In embodiments, the antenna layer 500 may include only one antenna element 510. In embodiments, the antenna layer 500 may include a number of the antenna elements 510 equal to a number of the second package electromagnetic wave transmission elements 42 IB of the waveguide layer 400.

[0141] Referring to FIGS. 4A and 5, each of the antenna elements 510 may correspond to a respective one of the second package electromagnetic wave transmission elements 42 IB. In embodiments, any, some, or all of the antenna elements 510 may correspond to a plurality of the second package electromagnetic wave transmission elements 42 IB. In embodiments, any, some, or all of the second electromagnetic wave transmission elements 42 IB may correspond to a plurality of the antenna elements 510. Accordingly, in embodiments, each of the second package electromagnetic wave transmission elements 42 IB may propagate and / or receive an electromagnetic wave to and / or from a respective one or more of the antenna elements 510 (for example, through the spacer layer 450). Similarly, in embodiments, each ofthe antenna elements 510 may propagate and / or receive an electromagnetic wave to and / or from a respective one or more of the second package electromagnetic wave transmission elements 421B (for example, through the spacer layer 450). To this effect, in embodiments, when the antenna layer 500, the spacer layer 450, and the waveguide layer 400 are attached, each of the antenna elements 510 may be positioned above (for example, in the +z direction of the axes of FIGS. 1 and / or 4) a respective one of the second package electromagnetic wave transmission elements 42 IB.

[0142] Accordingly, referring to FIGS. 1, 2A, 2C, 3A, 4A, and 5, the integrated digital RF circuit system 100 may operate, in embodiments, by propagating and / or receiving one or more electromagnetic wave signals, via, for example, the various components positioned therebetween, between the integrated circuit 270 and the antenna elements 510. For example, an electromagnetic wave may be transmitted by the integrated circuit 270 by the microstrip transmission line 271, whereafter the electromagnetic wave signal may propagate through the first SIW 260 and to the source electromagnetic wave transmission element 261, which may then transmit the electromagnetic wave signal through the waveguide channel 310 and to the first package electromagnetic wave transmission element 421 A, whereafter the electromagnetic wave signal may propagate through the second SIW 420 to the second package electromagnetic wave transmission element 42 IB, which may transmit the electromagnetic wave signal to the antenna element 510, which may thereby transmit the electromagnetic wave signal to an environment and / or external device. Similarly, in embodiments, the antenna element 510 may receive an electromagnetic wave signal which the antenna element 510 may transmit to the second package electromagnetic wave transmission element 42 IB, whereafter the electromagnetic wave signal may propagate through the second SIW 420 to the first package electromagnetic wave transmission element 421 A, which may transmit the electromagnetic wave signal through the waveguide channel 310 and to the source electromagnetic wave transmission element 261, whereafter the electromagnetic wave signal may propagate through the first SIW 260 and to the microstrip transmission line 271, which may thereby transmit the electromagnetic wave signal to the integrated circuit 270.

[0143] In embodiments, the source circuit board 110 may operate by propagating and / or receiving electromagnetic wave signals through the waveguide channel 310 via, for example, the various components positioned between the waveguide channel 310 and the integrated circuit 270. For example, an electromagnetic wave may be transmitted by the integrated circuit 270 by the microstrip transmission line 271, whereafter the electromagneticwave signal may propagate through the first SIW 260 and to the source electromagnetic wave transmission element 261, which may then transmit the electromagnetic wave signal through the waveguide channel 310. Similarly, in embodiments, the source electromagnetic wave transmission element 261 may receive an electromagnetic wave signal through the waveguide channel 310, whereafter the electromagnetic wave signal may propagate through the first SIW 260 and to the microstrip transmission line 271, which may thereby transmit the electromagnetic wave signal to the integrated circuit 270.

[0144] In embodiments, the antenna package 120 may operate, in embodiments, by propagating and / or receiving one or more electromagnetic wave signals through the waveguide channel 310, via, for example, the various components positioned between the waveguide channel 310 and the antenna elements 510. For example, the first package electromagnetic wave transmission element 421 A may receive an electromagnetic wave through the waveguide channel 310, whereafter the electromagnetic wave signal may propagate through the second SIW 420 to the second package electromagnetic wave transmission element 42 IB, which may transmit the electromagnetic wave signal to the antenna element 510, which thereby may transmit the electromagnetic wave signal to an environment and / or external device. Similarly, in embodiments, the antenna element 510 may receive an electromagnetic wave signal which the antenna element 510 may thereby transmit to the second package electromagnetic wave transmission element 42 IB, whereafter the electromagnetic wave signal may propagate through the second SIW 420 to the first package electromagnetic wave transmission element 421 A, which may transmit the electromagnetic wave signal through the waveguide channel 310.

[0145] FIG. 6 depicts a flow diagram of a first illustrative method 600 of manufacturing an integrated digital RF circuit system, such as the integrated digital RF circuit system 100 of FIGS. 1-5, as described herein. While the first method 600 generally relates to the manufacture of the integrated digital RF circuit systems described herein, it should be understood that a similar process may be used for other integrated digital RF circuit systems and, using only part of the first method 600, other integrated digital RF circuit systems, source circuit boards, antenna packages, and waveguide channels (e.g., the source circuit board 110, the antenna package 120, and / or the waveguide channel 310, as described herein with respect to FIGS. 1- 5), albeit without steps pertaining to components of such integrated digital RF circuit systems.

[0146] Referring to FIG. 6 and with reference to FIGS. 2A-3C, the first method 600 includes forming the source circuit board 110 comprising the waveguide channel 310 definedby the source circuit board 110 and the first base substrate 250 comprising the first SIW 260, as depicted in block 610. In embodiments, the first SIW 260 may comprise the first waveguide length (Z) and the first waveguide width (a) . In embodiments, the first SIW 260 may comprise the first plurality of vias 262A disposed along the first waveguide length (Z) of the first SIW 260. In embodiments, each of the vias 262 of the first plurality of vias 262A may extend at least partially through the first base substrate 250. In embodiments, the first SIW 260 may comprise the second plurality of vias 262B disposed along the first waveguide length (Z) of the first SIW 260. In embodiments, each of the vias 262 of the second plurality of vias 262B may extend at least partially through the first base substrate 250. In embodiments, the first plurality of vias 262A and the second plurality of vias 262B may be separated by the first waveguide width (a) of the first SIW 260. In embodiments, the source circuit board 110 may comprise the front side 112. In embodiments, the source circuit board 110 may comprise the rear side 114 opposite the front side 112. In embodiments, the waveguide channel 310 may guide an electromagnetic wave to andZor from the first SIW 260. In embodiments, the waveguide channel 310 may extend from the rear side 114 toward the front side 112. In embodiments, the waveguide channel 310 may define the channel length (lc) and the channel width (wc). In embodiments, the channel length (lc) may be greater than the channel width (wc). In embodiments, the channel length (lc) may be greater than the first waveguide width (a) of the first SIW 260. In embodiments, the waveguide channel 310 may be positioned at least partially between the first plurality of vias 262A and the second plurality of vias 262B. In embodiments, the first base substrate 250 may comprise the source electromagnetic wave transmission element 261. In embodiments, the waveguide channel 310 may be positioned about the source electromagnetic wave transmission element 261. In embodiments, the waveguide channel 310 may be positioned parallel or substantially parallel to the first waveguide length (Z) of the first SIW 260.

[0147] Referring again to FIG. 6 and with reference to FIGS. 1 and 5, the first method 600 includes attaching the antenna layer 500 to the spacer layer 450, as depicted in block 620.

[0148] Referring again to FIG. 6 and with reference to FIGS. 1 and 5, the first method 600 includes attaching the spacer layer 450 to the waveguide layer 400, as depicted in block 630. In embodiments, the spacer layer 450 may be positioned between the waveguide layer 400 and the antenna layer 500. In embodiments, the waveguide layer 400 may be positioned between the spacer layer 450 and the source circuit board 110.

[0149] Referring again to FIG. 6 and with reference to FIGS . 1 and 4A, the first method600 includes attaching the waveguide layer 400 to the rear side 114 of the source circuit board 110, as depicted in block 640.

[0150] In embodiments, the waveguide layer 400 may include the second base substrate 410. In embodiments, the second base substrate 410 may include the second SIW 420. In embodiments, the second SIW 420 may comprise the second waveguide length (Z) and the second waveguide width (a). In embodiments, the second SIW 420 may comprise the third plurality of vias 422A disposed along the second waveguide length (Z) of the second SIW 420. In embodiments, each of the vias 422 of the third plurality of vias 422A may extend at least partially through the second base substrate 410. In embodiments, the second SIW 420 may comprise the fourth plurality of vias 422B disposed along the second waveguide length (Z) of the second SIW 420. In embodiments, each of the vias 422 of the fourth plurality of vias 422B may extend at least partially through the second base substrate 410. In embodiments, the third plurality of vias 422A and the fourth plurality of vias 422B may be separated by the second waveguide width (a) of the second SIW 420. In embodiments, the second base substrate 410 may be a component of the waveguide layer 400. In embodiments, the waveguide layer 400 may comprise only a single layer, and, in embodiments, the single layer may be the second base substrate 410.

[0151] In embodiments, the waveguide channel 310 may be positioned at least partially between the third plurality of vias 422A and the fourth plurality of vias 422B. In embodiments, the channel length (lc) may be greater than the second waveguide width (a) of the second SIW 420. In embodiments, the second base substrate 410 may comprise the first package electromagnetic wave transmission element 421 A. In embodiments, the waveguide channel 310 may be positioned about the first package electromagnetic wave transmission element 421 A. In embodiments, the waveguide channel 310 may be positioned parallel or substantially parallel to the second waveguide length (Z) of the second SIW 420.

[0152] In embodiments, the waveguide channel 310 may guide an electromagnetic wave between the first SIW 260 and the second SIW 420. In embodiments, the channel length (lc) may be greater than the first waveguide width (a) of the first SIW 260 and the second waveguide width (a) of the second SIW 420. In embodiments, the waveguide channel 310 may be positioned at least partially between the first plurality of vias 262A and the second plurality of vias 262B and at least partially between the third plurality of vias 422A and the fourth plurality of vias 422B. In embodiments, the waveguide channel 310 may be positioned aboutboth the source electromagnetic wave transmission element 261 and the first package electromagnetic wave transmission element 421 A. In embodiments, the waveguide channel 310 may be positioned parallel or substantially parallel to both the first waveguide length (Z) of the first SIW 260 and the second waveguide length ( / ) of the second SIW 420.

[0153] FIG. 7 depicts a flow diagram of a second illustrative method 700 of manufacturing an integrated digital RF circuit system, such as the integrated digital RF circuit system 100 of FIGS. 1-5, as described herein. While the second method 700 generally relates to the manufacture of the integrated digital RF circuit systems described herein, it should be understood that a similar process may be used for other integrated digital RF circuit systems and, using only part of the second method 700, other integrated digital RF circuit systems, source circuit boards, antenna packages, and waveguide channels (e.g., the source circuit board 110, the antenna package 120, and / or the waveguide channel 310, as described herein with respect to FIGS. 1-5), albeit without steps pertaining to components of such integrated digital RF circuit systems.

[0154] Referring to FIG. 7 and with reference to FIGS. 4A-4B, the second method 700 includes forming the second base substrate 410 comprising the second SIW 420, as depicted in block 710. In embodiments, the second SIW 420 may comprise the second waveguide length ( / ) and the second waveguide width (a). In embodiments, the second SIW 420 may comprise the third plurality of vias 422A disposed along the second waveguide length ( / ) of the second SIW 420. In embodiments, each of the vias 422 of the third plurality of vias 422A may extend at least partially through the second base substrate 410. In embodiments, the second SIW 420 may comprise the fourth plurality of vias 422B disposed along the second waveguide length ( / ) of the second SIW 420. In embodiments, each of the vias 422 of the fourth plurality of vias 422B may extend at least partially through the second base substrate 410. In embodiments, the third plurality of vias 422A and the fourth plurality of vias 422B may be separated by the second waveguide width (a) of the second SIW 420. In embodiments, the second base substrate 410 may be a component of the waveguide layer 400. In embodiments, the waveguide layer 400 may comprise only a single layer, and, in embodiments, the single layer may be the second base substrate 410.

[0155] Referring again to FIG. 7 and with reference to FIGS. 1 and 5, the second method 700 includes attaching the antenna layer 500 to the spacer layer 450, as depicted in block 720.

[0156] Referring again to FIG. 7 and with reference to FIG. 1, the second method 700 includes attaching the spacer layer 450 to the second base substrate 410, as depicted in block 730. In embodiments wherein the second base substrate 410 is a component of the waveguide layer 400, the second method 700 may further or alternatively include attaching the spacer layer 450 to the waveguide layer 400, rather than, for example, attaching the spacer layer 450 directly to the second base substrate 410.

[0157] Referring again to FIG. 7 and with reference to FIGS. 1-4B, the second method 700 includes attaching the second base substrate 410 to the rear side 114 of the source circuit board 110, as depicted in block 740. In embodiments, the source circuit board 110 may comprise the front side 112 opposite the rear side 114. In embodiments, the source circuit board 110 may define the waveguide channel 310. In embodiments, the waveguide channel 310 may guide an electromagnetic wave to and / or from the second SIW 420. In embodiments, the waveguide channel 310 may extend from the rear side 114 toward the front side 112. In embodiments, the waveguide channel 310 may define the channel length (lc) and the channel width (wc). In embodiments, the channel length (lc) may be greater than the channel width (Wc).

[0158] In embodiments wherein the second base substrate 410 is a component of the waveguide layer 400, the second method 700 may further or alternatively include attaching the waveguide layer 400 to the source circuit board 110, rather than, for example, attaching the second base substrate 410 directly to the source circuit board 110. In embodiments, the waveguide layer 400, rather than the source circuit board 110, may define the waveguide channel 310. In certain such embodiments, the waveguide channel 310 may extend from the source circuit board 110 to the second base substrate 410.

[0159] In embodiments, the waveguide channel 310 may be positioned at least partially between the third plurality of vias 422A and the fourth plurality of vias 422B. In embodiments, the channel length (lc) may be greater than the second waveguide width (a) of the second SIW 420. In embodiments, the second base substrate 410 may comprise the first package electromagnetic wave transmission element 421 A. In embodiments, the waveguide channel 310 may be positioned about the first package electromagnetic wave transmission element 421 A. In embodiments, the waveguide channel 310 may be positioned parallel or substantially parallel to the second waveguide length (Z) of the second SIW 420.

[0160] In embodiments, the source circuit board 110 may comprise the first base substrate 250. In embodiments, the first base substrate 250 may comprise the first SIW 260. In embodiments, the first SIW 260 may comprise the first waveguide length (Z) and the first waveguide width (a). In embodiments, the first SIW 260 may comprise the first plurality of vias 262A disposed along the first waveguide length (Z) of the first SIW 260. In embodiments, each of the vias 262 of the first plurality of vias 262A may extend at least partially through the first base substrate 250. In embodiments, the first SIW 260 may comprise the second plurality of vias 262B disposed along the first waveguide length (Z) of the first SIW 260. In embodiments, each of the vias 262 of the second plurality of vias 262B may extend at least partially through the first base substrate 250. In embodiments, the first plurality of vias 262A and the second plurality of vias 262B may be separated by the first waveguide width (a) of the first SIW 260. In embodiments, the waveguide channel 310 may guide an electromagnetic wave to and / or from the first SIW 260. In embodiments, the waveguide channel 310 may extend from the rear side 114 toward the front side 112. In embodiments, the channel length (1c) of the waveguide channel 310 may be greater than the first waveguide width (a) of the first SIW 260. In embodiments, the waveguide channel 310 may be positioned at least partially between the first plurality of vias 262A and the second plurality of vias 262B. In embodiments, the first base substrate 250 may comprise the source electromagnetic wave transmission element 261. In embodiments, the waveguide channel 310 may be positioned about the source electromagnetic wave transmission element 261. In embodiments, the waveguide channel 310 may be positioned parallel or substantially parallel to the first waveguide length ( / ) of the first SIW 260.

[0161] In embodiments, the waveguide channel 310 may guide an electromagnetic wave between the first SIW 260 and the second SIW 420. In embodiments, the channel length (lc) may be greater than the first waveguide width (a) of the first SIW 260 and the second waveguide width (a) of the second SIW 420. In embodiments, the waveguide channel 310 may be positioned at least partially between the first plurality of vias 262A and the second plurality of vias 262B and at least partially between the third plurality of vias 422A and the fourth plurality of vias 422B. In embodiments, the waveguide channel 310 may be positioned about both the source electromagnetic wave transmission element 261 and the first package electromagnetic wave transmission element 421 A. In embodiments, the waveguide channel 310 may be positioned parallel or substantially parallel to both the first waveguide length (Z) of the first SIW 260 and the second waveguide length (Z) of the second SIW 420.

[0162] In embodiments, the second base substrate 410 may be positioned between the spacer layer 450 and the source circuit board 110. In embodiments, the spacer layer 450 may be positioned between the antenna layer 500 and the second base substrate 410.

[0163] It should now be understood that the present disclosure relates to various integrated digital RF circuit systems, source circuit boards, and antenna packages, in addition to methods of manufacturing the same, that include an SIW having a waveguide length, a first plurality of vias, and a second plurality of vias and a waveguide channel having a channel length and a channel width, wherein the waveguide channel is positioned at least partially between the first plurality of vias and the second plurality of vias, channel length is greater than the channel width, and the channel length is greater than the waveguide width. Accordingly, integrated digital RF circuit systems, source circuit boards, and antenna packages are described herein that have waveguide channels which may be parallel or substantially parallel to waveguide lengths of waveguides of a source circuit board (e.g., of an integrated digital RF circuit system), of waveguides of an antenna package (e.g., of an integrated digital RF circuit system), and / or of waveguides of both a source circuit board and an antenna package of an integrated digital RF circuit system. Such waveguide channels of source circuit boards, antenna packages, or both may advantageously reduce a size of such waveguides and / or substrates upon which such waveguides are positioned, by, for example, orienting the waveguide channel to be parallel or substantially parallel to waveguide lengths of such waveguides. Further, such waveguide channels of source circuit boards, antenna packages, or both may advantageously reduce electrical loss of an electromagnetic wave propagated and / or received by a waveguide of a source circuit board or an antenna package by providing a waveguide between the source circuit board and antenna package.EXAMPLES

[0001] In order that various embodiments be more readily understood, reference is made to the following examples, which are intended to illustrate various embodiments of the laser bonding methods described herein.

[0164] Referring now to FIG. 8, a plot 800 demonstrates electrical loss (as measured in decibels (“dB”)) of electromagnetic waves propagated through a waveguide channel (for example, the waveguide channel 310) relative to frequencies (in GHz) of such electromagnetic waves. As exemplified, at, for example, 77 GHz, an electromagnetic wave exhibits loss of about 1 dB including about 0.5 dB in propagation loss (rather than, for example, insertion loss).

[0165] While particular embodiments have been illustrated and described herein, it should be understood that various other changes and modifications may be made without departing from the spirit and scope of the claimed subject matter. Moreover, although various aspects of the claimed subject matter have been described herein, such aspects need not be utilized in combination. It is therefore intended that the appended claims cover all such changes and modifications that are within the scope of the claimed subject matter.

Claims

CLAIMSWhat is claimed is:

1. An integrated digital RF circuit system comprising: a first base substrate comprising a first substrate integrated waveguide, the first substrate integrated waveguide comprising: a first waveguide length and a first waveguide width, a first plurality of vias disposed along the first waveguide length, wherein each via of the first plurality of vias extends at least partially through the first base substrate, and a second plurality of vias disposed along the first waveguide length, wherein each via of the second plurality of vias extends at least partially through the first base substrate and wherein the first plurality of vias and the second plurality of vias are separated by the first waveguide width; and a source circuit board comprising: a front side, a rear side opposite the front side, and a waveguide channel defined by the source circuit board which guides an electromagnetic wave to or from the first substrate integrated waveguide, wherein the waveguide channel extends from the rear side toward the front side; wherein: the waveguide channel is positioned at least partially between the first plurality of vias and the second plurality of vias; the waveguide channel defines a channel length and a channel width; the channel length is greater than the channel width; and the channel length is greater than the first waveguide width.

2. The integrated digital RF circuit system of claim 1, wherein: the source circuit board comprises the first base substrate, the first base substrate comprises a source electromagnetic wave transmission element, and the source electromagnetic wave transmission element propagates or receives the electromagnetic wave through the waveguide channel.

3. The integrated digital RF circuit system of claim 2, wherein the source electromagnetic wave transmission element comprises at least one of: a grounded coplanar waveguide; a microstrip transmission line; a patch element; a slot antenna; an RF chip; or any combination thereof.

4. The integrated digital RF circuit system of claim 3, wherein the first base substrate is attached to the source circuit board by at least one of: an adhesive; soldering; ambient temperature laser welding; laser sintering; optical contacting; thermal diffusion bonding; or any combination thereof.

5. The integrated digital RF circuit system of claim 1, further comprising an antenna package, wherein the antenna package is attached to the rear side of the source circuit board and wherein the antenna package comprises the first base substrate.

6. The integrated digital RF circuit system of claim 5, wherein: the antenna package further comprises a spacer layer and an antenna layer; the antenna layer comprises an antenna element; the spacer layer is positioned between the antenna layer and the first base substrate; and the first base substrate is positioned between the spacer layer and the rear side of the source circuit board.

7. The integrated digital RF circuity system of claim 6, wherein the antenna element either:receives the first electromagnetic wave from the first substrate integrated waveguide and transmits the first electromagnetic wave into an environment; receives the first electromagnetic wave from the environment and transmits the first electromagnetic wave to the first substrate integrated waveguide; or any combination thereof.

8. The integrated digital RF circuitry system of claim 5, wherein: the source circuit board further comprises a second base substrate; the second base substrate comprises a second substrate integrated waveguide; the antenna package comprises a package electromagnetic wave transmission element; the second substrate integrated waveguide comprises a source electromagnetic wave transmission element; and the waveguide channel guides the electromagnetic wave between the source electromagnetic wave transmission element and the package electromagnetic wave transmission element.

9. The integrated digital RF circuitry system of claim 8, wherein either or both of the package electromagnetic wave transmission element and the source electromagnetic wave transmission element comprises at least one of: a grounded coplanar waveguide; a microstrip transmission line; a patch element; a slot antenna; an RF chip; or any combination thereof.

10. The integrated digital RF circuit system of claim 8, wherein the second substrate integrated waveguide comprises: a second waveguide length and a second waveguide width; a third plurality of vias disposed along the second waveguide length, wherein each via of the third plurality of vias extends at least partially through the second base substrate; and a fourth plurality of vias disposed along the second waveguide length, wherein each via of the fourth plurality of vias extends at least partially through the second base substrateand wherein the third plurality of vias and the fourth plurality of vias are separated by the second waveguide width; wherein: the waveguide channel is positioned at least partially between the third plurality of vias and the fourth plurality of vias; and the channel length is greater than the second waveguide width.

11. The integrated digital RF circuit system of claim 5, wherein the antenna package is attached to the source circuit board by at least one of: an adhesive; soldering; ambient temperature laser welding; laser sintering; optical contacting; thermal diffusion bonding; or any combination thereof.

12. The integrated digital RF circuit system of claim 1, wherein the electromagnetic wave comprises a frequency of greater than or equal 300 MHz and less than or equal to 300 GHz.

13. The integrated digital RF circuit system of claim 12, wherein the electromagnetic wave comprises a frequency of greater than or equal to 75 GHz and less than or equal to 84 GHz.

14. The integrated digital RF circuit system of claim 1, wherein: the electromagnetic wave comprises a wavelength X; the first waveguide width is greater than or equal to (0.5 * X) - 0.05 mm; and the first waveguide width is less than or equal to (0.5 * X) + 0.05 mm.

15. The integrated digital RF circuit system of claim 1, wherein: the channel length is greater than or equal to 2.9 mm and less than or equal to 3. 1 mm; and the channel width is greater than or equal to 1.4 mm and less than or equal to 1.6 mm.

16. The integrated digital RF circuit system of claim 1, wherein the channel length is parallel to the first waveguide length.

17. The integrated circuit system of claim 1, wherein the source circuit board comprises a printed circuit board.

18. The integrated digital RF circuit system of claim 1, wherein the first base substrate comprises at least one of: a glass; a ceramic; a glass-ceramic; a polymer; a polycrystalline ceramic; a single crystal ceramic; or any combination thereof.

19. A method for manufacturing an integrated digital RF circuit system, the method comprising: forming a source circuit board comprising: a base substrate comprising a substrate integrated waveguide, the substrate integrated waveguide comprising: a waveguide length and a waveguide width, a first plurality of vias disposed along the waveguide length, wherein each via of the first plurality of vias extends at least partially through the base substrate, and a second plurality of vias disposed along the waveguide length, wherein each via of the second plurality of vias extends at least partially through the base substrate and wherein the first plurality of vias and the second plurality of vias are separated by the first waveguide width, a front side, a rear side opposite the front side, and a waveguide channel defined by the source circuit board for guiding an electromagnetic wave to or from the first substrate integrated waveguide, wherein the waveguide channel extends from the rear side toward the front side, wherein: the waveguide channel defines a channel length and a channel width,the channel length is greater than the channel width, the channel length is greater than the waveguide width, and the waveguide channel is positioned at least partially between the first plurality of vias and the second plurality of vias; attaching an antenna layer to a spacer layer; attaching the spacer layer to a waveguide layer; attaching the waveguide layer to the rear side of the source circuit board, wherein: the spacer layer is positioned between the waveguide layer and the antenna layer, and the waveguide layer is positioned between the spacer layer and the source circuit board.

20. A method for manufacturing an integrated digital RF circuit system, the method comprising: forming abase substrate comprising a substrate integrated waveguide, the substrate integrated waveguide comprising: a waveguide length and a waveguide width, a first plurality of vias disposed along the waveguide length, wherein each via of the first plurality of vias extends at least partially through the base substrate, and a second plurality of vias disposed along the waveguide length, wherein each via of the second plurality of vias extends at least partially through the base substrate and wherein the first plurality of vias and the second plurality of vias are separated by the waveguide width; attaching an antenna layer to a spacer layer; attaching the spacer layer to the base substrate; and attaching the base substrate to a rear side of a source circuit board comprising: a front side opposite the rear side, and a waveguide channel defined by the source circuit board for guiding an electromagnetic wave to or from the substrate integrated waveguide, wherein: the waveguide channel extends from the rear side toward the front side, the waveguide channel is positioned at least partially between the first plurality of vias and the second plurality of vias, the waveguide channel defines a channel length and a channel width, the channel length is greater than the channel width,the channel length is greater than the waveguide width, the base substrate is positioned between the spacer layer and the source circuit board, and the spacer layer is positioned between the antenna layer and the base substrate.

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