Transfer method, transfer unit, release plate, release plate precursor substrate, method for manufacturing display device, and method for manufacturing mounting board

Abstract

The present invention discloses a transfer method for transferring a structure to a transfer destination, the transfer method comprising: preparing a release plate that includes a base material, a resin layer provided on the base material, and a structure retained on the surface of the resin layer on the opposite side from the base material, in which the retained thickness of the portion of the resin layer located between the base material and the structure is a thickness for which a transfer laser has a transmittance of at least 50%; and transferring the structure from the release plate to a transfer destination by causing the transfer laser to be incident on the base material from the surface of the base material on the opposite side from the resin layer, with an energy density such that at least a portion of the resin layer remains on the base material. This provides a transfer method that allows for a reduction in residue originating from the resin layer (retention layer) on the structure after transfer.

Description

Transfer method, transfer unit, release plate, release plate precursor substrate, display device manufacturing method, and mounting substrate manufacturing method

[0001] The present invention relates to a transfer method, a transfer unit, a release plate, a release plate precursor substrate, a method for manufacturing a display device, and a method for manufacturing a mounting substrate.

[0002] In recent years, with the miniaturization of semiconductor elements, microstructure transfer (mounting) technology using adhesive resins has attracted attention as a means of assembling electrical and electronic products using semiconductor elements. In particular, there has been active development of technology for manufacturing LED displays for applications such as signage, TVs, medical devices, in-vehicle displays, and smartphones by transferring (mounting) tens of thousands of mini-LEDs (LED elements with short sides of 100 μm or more to several hundred μm) or micro-LEDs (LED elements with short sides of 100 μm or less, or even 50 μm or less) at once.

[0003] To date, methods have been developed for transferring microstructures such as microLEDs onto circuit boards using silicone adhesive cured materials as donor substrates or transfer stamp materials (see, for example, Patent Document 1).

[0004] Furthermore, a technique has been proposed that can transfer semiconductor chips with high precision by mitigating the impact during transfer (for example, Patent Document 2).

[0005] JP 2021-34610 A JP 2019-67892 A

[0006] Kristin M. Charipar et al., "Use of an Elastomeric Donor for LIFT of Metal Foils," Journal of Laser Micro / Nanoengineering, Vol. 13, No. 2, 2018.

[0007] One technique for transferring a structure using a laser is to transfer an object to be transferred by using a laser-induced phenomenon such as laser ablation. Among these techniques, a technique for moving an object to be transferred in the direction of laser irradiation is called LIFT (Laser-Induced Forward Transfer) (see, for example, Non-Patent Document 1). Conversely, a method for returning an object to be transferred in the direction of laser irradiation is called LIBT (Laser-Induced Back Transfer).

[0008] In conventional LIFT, a release plate is used that includes a substrate and a support layer formed on the substrate and holding the structure, and the structure is peeled off (transferred) from the interface between the substrate and the support layer of the release plate by laser ablation. This method allows the structure to be transferred to the transfer destination with a certain degree of accuracy.

[0009] However, in conventional LIFT, a method for steadily causing ablation has been considered to ensure the transfer of structures, but the resin layer on the release plate is strongly ablated, resulting in a problem that a large amount of residue from the resin layer remains in the transferred structure.

[0010] The present invention has been made to solve the above problems, and aims to provide a transfer method that can reduce residues resulting from a resin layer (retention layer) on a structure after transfer, a transfer unit that can transfer a structure with reduced residue to a transfer destination, a release plate that can transfer a structure with reduced residue, a release plate precursor substrate that can provide a release plate that can transfer a structure with reduced residue, a manufacturing method for a display device that can manufacture a display device in which a structure with reduced residue is arranged on a wiring substrate, and a manufacturing method for a mounting substrate that can manufacture a mounting substrate in which a structure with reduced residue is arranged on a wiring substrate.

[0011] In order to solve the above-mentioned problems, the present invention provides, as a first aspect of a transfer method, a transfer method for transferring a structure to a transfer destination, the transfer method including: preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite to the substrate, the resin layer having a thickness such that a portion of the resin layer held between the substrate and the structure has a thickness that allows a transfer laser transmittance of 50% or more; and applying the transfer laser to the substrate from the surface of the substrate opposite to the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the transfer destination.

[0012] The transfer method of the first aspect as described above can reduce residues originating from the resin layer (retention layer) on the structure after transfer.

[0013] The thickness of the resin layer is preferably such that the transmittance of the transfer laser is 70% or more.

[0014] By using a resin layer with a retention thickness that provides a transfer laser transmittance of 70% or more, residues originating from the resin layer (retention layer) on the structure after transfer can be reduced.

[0015] The retained thickness of the resin layer may be 0.1 μm or less.

[0016] For example, the thickness of the resin layer can be set to 0.1 μm or less.

[0017] The retained thickness of the resin layer is preferably 0.06 μm or less.

[0018] The thickness of the resin layer is preferably 0.06 μm or less.

[0019] The resin layer may include a portion that is thicker than the retaining thickness in an area other than where the structures are disposed.

[0020] In the resin layer, the holding thickness of the portion located between the base material of the resin layer and the structure may be a thickness that provides a transfer laser transmittance of 50% or more, and other portions may be thicker than the holding thickness.

[0021] For example, the thickness of the thick portion may be greater than 0.1 μm and equal to or less than 0.4 μm.

[0022] The thickness of the thick portion is not particularly limited, but can be, for example, more than 0.1 μm and 0.4 μm or less.

[0023] For example, at least a portion of the resin layer can be thermally decomposed at the interface where the structure and the resin layer are in contact, and the structure can be transferred from the release plate to the transfer destination.

[0024] For example, at least a portion of the resin layer can be thermally decomposed at the interface where the structure and the resin layer are in contact, and the structure can be transferred from the release plate to the transfer destination.

[0025] In this case, thermal decomposition of the resin layer at the interface can occur when the transfer laser passes through the substrate and the resin layer, causing the surface of the structure in contact with the resin layer to heat up to a temperature above the thermal decomposition temperature of the resin layer.

[0026] Instead of absorbing the transfer laser, the surface of the structure in contact with the resin layer may generate heat at a temperature equal to or higher than the thermal decomposition temperature of the resin layer, thereby causing thermal decomposition of the resin layer.

[0027] The thermal decomposition temperature of the constituent material of the surface of the structure in contact with the resin layer is preferably higher than the thermal decomposition temperature of the resin layer.

[0028] Such a structure can be transferred to a transfer destination while preventing deterioration.

[0029] It is more preferable that the thermal decomposition temperature of the constituent material of the surface of the structure in contact with the resin layer is higher by 200° C. or more than the thermal decomposition temperature of the resin layer.

[0030] With such a structure, it is possible to transfer to the transfer destination while more reliably preventing deterioration.

[0031] For example, the resin layer may include a polyimide or benzocyclobutene resin.

[0032] Although not particularly limited, for example, a resin layer containing polyimide or benzocyclobutene resin can be used.

[0033] For example, the surface of the structure that is in contact with the resin layer may contain gallium nitride or gallium phosphide.

[0034] The material of the structure is not particularly limited, but for example, a structure whose surface in contact with the resin layer contains gallium nitride or gallium phosphide can be transferred.

[0035] For example, the resin layer may contain polyimide, and the surface of the structure that is in contact with the resin layer may contain gallium nitride.

[0036] For example, a resin layer containing polyimide can be used to transfer a structure whose surface in contact with the resin layer contains gallium nitride.

[0037] Alternatively, the resin layer may contain polyimide, and the surface of the structure that is in contact with the resin layer may contain gallium phosphide.

[0038] For example, a resin layer containing polyimide may be used, and a structure whose surface in contact with the resin layer contains gallium phosphide may be transferred.

[0039] Alternatively, the resin layer may contain benzocyclobutene resin, and the surface of the structure in contact with the resin layer may contain gallium phosphide.

[0040] For example, a resin layer containing benzocyclobutene resin may be used to transfer a structure whose surface in contact with the resin layer contains gallium phosphide.

[0041] For example, the transmittance of the substrate to the transfer laser may be 90% or more.

[0042] The transmittance of the transfer laser through the substrate is not particularly limited, but can be, for example, 90% or more.

[0043] The transfer laser may be, for example, an excimer laser having a wavelength of 248 nm.

[0044] The wavelength of the transfer laser is not particularly limited, but for example, an excimer laser with a wavelength of 248 nm can be used.

[0045] The present invention also provides, as a second aspect of the transfer method, a transfer method for transferring a structure to a transfer destination, comprising: preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, wherein the holding thickness of a portion of the resin layer located between the substrate and the structure is 0.1 μm or less; and applying a transfer laser to the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the transfer destination.

[0046] Even with the transfer method of the second embodiment, residues originating from the resin layer (retention layer) on the structure after transfer can be reduced.

[0047] For example, the transmittance of the substrate to the transfer laser may be 90% or more.

[0048] The transmittance of the transfer laser through the substrate is not particularly limited, but can be, for example, 90% or more.

[0049] The present invention also provides a third aspect of a transfer method for transferring a structure to a transfer destination, the transfer method comprising: preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate; and irradiating a transfer laser onto the substrate from the surface of the substrate opposite the resin layer so as to suppress direct ablation of the resin layer by the transfer laser, thereby generating heat at the surface of the structure in contact with the resin layer and thermally decomposing at least a portion of the resin layer at the interface where the structure and the resin layer are in contact; and transferring the structure from the release plate to the transfer destination.

[0050] Even with the transfer method of the third aspect, residues originating from the resin layer (retention layer) on the structure after transfer can be reduced.

[0051] The present invention also provides, as a first aspect of the transfer unit, a transfer unit that transfers a structure to a transfer destination, comprising: a light source that oscillates a transfer laser; a release plate that includes a substrate, a resin layer provided on the substrate, and a structure held on the surface of the resin layer opposite the substrate, wherein the holding thickness of a portion of the resin layer located between the substrate and the structure is a thickness that makes the transmittance of the transfer laser 50% or more; a holding mechanism configured to hold the transfer destination; an alignment mechanism configured to position the light source and the holding mechanism opposite each other with the release plate sandwiched therebetween; and a controller configured to control the oscillation of the transfer laser by the light source so that the transfer laser is incident on the substrate from the surface of the substrate opposite the resin layer, with an energy density such that at least a portion of the resin layer remains on the substrate.

[0052] With such a transfer unit of the first embodiment, it is possible to reduce residues originating from the resin layer (retention layer) on the structure after transfer.

[0053] The thickness of the resin layer is preferably such that the transmittance of the transfer laser is 70% or more.

[0054] If the transfer unit includes a resin layer having a thickness that allows the transmittance of the transfer laser to be 70% or more, the structure can be transferred to the transfer destination with high accuracy.

[0055] The retained thickness of the resin layer may be 0.1 μm or less.

[0056] For example, the thickness of the resin layer can be set to 0.1 μm or less.

[0057] The retained thickness of the resin layer is preferably 0.06 μm or less.

[0058] The thickness of the resin layer is preferably 0.06 μm or less.

[0059] In the resin layer, a region other than where the structures are disposed may include a portion that is thicker than the retained thickness.

[0060] In the resin layer, the holding thickness of the portion located between the base material of the resin layer and the structure may be a thickness that provides a transfer laser transmittance of 50% or more, and other portions may be thicker than the holding thickness.

[0061] For example, the thickness of the thick portion may be greater than 0.1 μm and equal to or less than 0.4 μm.

[0062] The thickness of the thick portion is not particularly limited, but can be, for example, more than 0.1 μm and 0.4 μm or less.

[0063] The transfer unit of the present invention may, for example, thermally decompose at least a portion of the resin layer at the interface where the structure and the resin layer contact, and transfer the structure from the release plate to a transfer destination.

[0064] In the transfer unit of the present invention, for example, at least a part of the resin layer can be thermally decomposed at the interface where the structure and the resin layer are in contact, and the structure can be transferred from the release plate to the transfer destination.

[0065] In this case, thermal decomposition of the resin layer at the interface can occur when the transfer laser passes through the substrate and the resin layer, causing the surface of the structure in contact with the resin layer to heat up to a temperature above the thermal decomposition temperature of the resin layer.

[0066] Instead of absorbing the transfer laser, the surface of the structure in contact with the resin layer may generate heat at a temperature equal to or higher than the thermal decomposition temperature of the resin layer, thereby causing thermal decomposition of the resin layer.

[0067] The thermal decomposition temperature of the constituent material of the surface of the structure in contact with the resin layer is preferably higher than the thermal decomposition temperature of the resin layer.

[0068] Such a transfer unit makes it possible to transfer the structure to the transfer destination while preventing the structure from being deteriorated.

[0069] It is more preferable that the thermal decomposition temperature of the constituent material of the surface of the structure in contact with the resin layer is higher by 200° C. or more than the thermal decomposition temperature of the resin layer.

[0070] With such a transfer unit, it is possible to transfer the structure to the transfer destination while more reliably preventing the structure from deteriorating.

[0071] For example, the resin layer may include a polyimide or benzocyclobutene resin.

[0072] Although not particularly limited, for example, a resin layer containing polyimide or benzocyclobutene resin can be used.

[0073] For example, the surface of the structure that is in contact with the resin layer may contain gallium nitride or gallium phosphide.

[0074] The constituent material of the structure is not particularly limited, but may include, for example, a structure whose surface in contact with the resin layer contains gallium nitride or gallium phosphide.

[0075] For example, the resin layer may contain polyimide, and the surface of the structure that is in contact with the resin layer may contain gallium nitride.

[0076] For example, it may include a resin layer containing polyimide and a structure whose surface in contact with the resin layer contains gallium nitride.

[0077] Alternatively, the resin layer may contain benzocyclobutene resin, and the surface of the structure in contact with the resin layer may contain gallium phosphide.

[0078] For example, it may include a resin layer containing a benzocyclobutene resin and a structure whose surface in contact with the resin layer contains gallium phosphide.

[0079] Alternatively, the resin layer may contain polyimide, and the surface of the structure that is in contact with the resin layer may contain gallium phosphide.

[0080] For example, it may include a resin layer containing polyimide and a structure whose surface in contact with the resin layer contains gallium phosphide.

[0081] For example, the transmittance of the substrate to the transfer laser may be 90% or more.

[0082] The transmittance of the transfer laser through the substrate is not particularly limited, but can be, for example, 90% or more.

[0083] The light source can oscillate, for example, an excimer laser having a wavelength of 248 nm.

[0084] The wavelength of the transfer laser is not particularly limited, but for example, an excimer laser with a wavelength of 248 nm can be used.

[0085] The present invention also provides a second aspect of the transfer unit, which is a transfer unit that transfers a structure to a transfer destination, comprising: a light source that oscillates a transfer laser; a release plate that includes a substrate, a resin layer provided on the substrate, and a structure held on the surface of the resin layer opposite the substrate, wherein the holding thickness of a portion of the resin layer located between the substrate and the structure is 0.1 μm or less; a holding mechanism configured to hold the transfer destination; an alignment mechanism configured to position the light source and the holding mechanism opposite each other with the release plate sandwiched therebetween; and a controller configured to control the oscillation of the transfer laser by the light source so that the transfer laser is incident on the substrate from the surface of the substrate opposite the resin layer, with an energy density such that at least a portion of the resin layer remains on the substrate.

[0086] Even with the transfer unit of the second embodiment, residues originating from the resin layer (retention layer) on the structure after transfer can be reduced.

[0087] For example, the transmittance of the substrate to the transfer laser may be 90% or more.

[0088] The transmittance of the transfer laser through the substrate is not particularly limited, but can be, for example, 90% or more.

[0089] The present invention also provides a transfer method as a third aspect of a transfer unit, which is a transfer unit that transfers a structure to a transfer destination, comprising: a light source that oscillates a transfer laser; a release plate that includes a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate; and a controller configured to control the oscillation of the transfer laser by the light source so that the transfer laser is incident on the substrate from the surface of the substrate opposite the resin layer so as to suppress direct ablation of the resin layer by the transfer laser, thereby heating the surface of the structure that contacts the resin layer and thermally decomposing at least a portion of the resin layer at the interface where the structure and the resin layer contact, and transferring the structure from the release plate to the transfer destination.

[0090] Even with the transfer unit of the third embodiment, residues originating from the resin layer (retention layer) on the structure after transfer can be reduced.

[0091] The present invention also provides, as a first aspect of the release plate, a release plate used to transfer a structure to a transfer destination using a transfer laser, comprising: a substrate; a resin layer provided on the substrate; and a structure held on the surface of the resin layer opposite the substrate, wherein the holding thickness of the portion of the resin layer located between the substrate and the structure is such that the transmittance of the transfer laser is 50% or more.

[0092] With such a release plate of the first aspect, it is possible to reduce residues originating from the resin layer (retention layer) on the structure after transfer.

[0093] Furthermore, the present invention provides a second aspect of the release plate, which is used to transfer a structure to a transfer destination using a transfer laser, and includes: a substrate; a resin layer provided on the substrate; and a structure held on a surface of the resin layer opposite the substrate, wherein the holding thickness of the portion of the resin layer located between the substrate and the structure is 0.1 μm or less.

[0094] Even with the release plate of the second embodiment, residues originating from the resin layer (retention layer) on the structure after transfer can be reduced.

[0095] The present invention also provides a release plate precursor substrate used to manufacture a release plate that transfers a structure to a transfer destination using a transfer laser, the release plate precursor substrate having a base material and a resin layer provided on the base material, wherein the thickness of the resin layer is 0.4 μm or less.

[0096] By using such a release plate precursor substrate, it is possible to reduce residues originating from the resin layer (retention layer) on the structure after transfer.

[0097] The present invention also provides a first aspect of a method for manufacturing a display device, which is a method for manufacturing a display device that transfers a structure to a wiring board, comprising: preparing a wiring board; preparing a release plate that includes a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, wherein the holding thickness of a portion of the resin layer located between the substrate and the structure is such that the transmittance of a transfer laser is 50% or more; and irradiating the transfer laser onto the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the wiring board.

[0098] According to the manufacturing method of the display device of the first aspect, it is possible to manufacture a display device in which structures with reduced residues are arranged on a wiring substrate.

[0099] The present invention also provides a second aspect of a method for manufacturing a display device, which is a method for manufacturing a display device in which a structure is transferred to a wiring substrate, comprising: preparing a wiring substrate; preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, wherein the holding thickness of a portion of the resin layer located between the substrate and the structure is 0.1 μm or less; and irradiating a transfer laser onto the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the wiring substrate.

[0100] Even with the method for manufacturing a display device according to the second aspect, it is possible to manufacture a display device in which structures with reduced residues are arranged on a wiring substrate.

[0101] The present invention also provides a third aspect of a method for manufacturing a display device, which is a method for manufacturing a display device that transfers a structure to a wiring board, comprising: preparing a wiring board; preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate; and irradiating a transfer laser onto the substrate from a surface of the substrate opposite the resin layer so as to suppress direct ablation of the resin layer by the transfer laser, thereby heating the surface of the structure that contacts the resin layer and thermally decomposing at least a portion of the resin layer at the interface where the structure and the resin layer contact, and transferring the structure from the release plate to the wiring board.

[0102] Even with the manufacturing method of the display device according to the third aspect, it is possible to manufacture a display device in which structures with reduced residues are arranged on a wiring substrate.

[0103] Furthermore, the present invention provides a first aspect of a method for manufacturing a mounting substrate, which is a method for transferring a structure to a wiring board, comprising: preparing a wiring board; preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, wherein the holding thickness of a portion of the resin layer located between the substrate and the structure is such that the transmittance of a transfer laser is 50% or more; and applying the transfer laser to the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the wiring board.

[0104] According to the method for manufacturing a mounting board of the first aspect, it is possible to manufacture a mounting board in which a structure with reduced residue is arranged on a wiring board.

[0105] Furthermore, the present invention provides a second aspect of a method for manufacturing a mounting substrate, which is a method for transferring a structure to a wiring board, comprising: preparing a wiring board; preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, wherein the holding thickness of a portion of the resin layer located between the substrate and the structure is 0.1 μm or less; and applying a transfer laser to the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the wiring board.

[0106] The method for manufacturing a mounting board according to the second aspect also makes it possible to manufacture a mounting board on which a structure with reduced residue is arranged on a wiring board.

[0107] Furthermore, the present invention provides a third aspect of a method for manufacturing a mounting substrate, which is a method for transferring a structure to a wiring board, comprising: preparing a wiring board; preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate; and irradiating a transfer laser onto the substrate from a surface of the substrate opposite the resin layer so as to suppress direct ablation of the resin layer by the transfer laser, thereby generating heat at a surface of the structure in contact with the resin layer and thermally decomposing at least a portion of the resin layer at the interface where the structure and the resin layer are in contact; and transferring the structure from the release plate to the wiring board.

[0108] The method for manufacturing a mounting board according to the third aspect also makes it possible to manufacture a mounting board on which a structure with reduced residue is arranged on a wiring board.

[0109] It is a schematic diagram showing an example of a transfer unit of the present invention. It is a schematic enlarged cross-sectional view of a part of the release plate shown in Figure 1. It is a schematic enlarged cross-sectional view of a part of an example of a transfer method of the present invention. It is a schematic cross-sectional view of a part of another example of a transfer method of the present invention.

[0110] As described above, there has been a need to develop a transfer method that reduces residues on the structure after transfer.

[0111] The present inventors have discovered that by using a release plate in which the retention thickness of the portion of the resin layer located between the substrate and the structure is such that the transmittance of the transfer laser is 50% or more, or a release plate in which the retention thickness of the portion of the resin layer located between the substrate and the structure is 0.1 μm or less, and irradiating the substrate with a transfer laser from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, or by irradiating the substrate with a transfer laser from the surface of the substrate opposite the resin layer so as to suppress direct ablation of the resin layer by the transfer laser, the surface of the structure in contact with the resin layer is heated, and at least a portion of the resin layer is thermally decomposed at the interface where the structure and the resin layer contact, it is possible to transfer the structure to the transfer destination while reducing residues derived from the resin layer (retention layer) on the structure after transfer, and have completed the present invention.

[0112] That is, the transfer method of a first aspect of the present invention is a transfer method for transferring a structure to a transfer destination, comprising: preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on the surface of the resin layer opposite the substrate, wherein the holding thickness of the portion of the resin layer located between the substrate and the structure is such that the transmittance of the transfer laser is 50% or more; and irradiating the transfer laser onto the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the transfer destination.

[0113] Furthermore, a transfer method of a second aspect of the present invention is a transfer method for transferring a structure to a transfer destination, comprising: preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, wherein the holding thickness of the portion of the resin layer located between the substrate and the structure is 0.1 μm or less; and irradiating a transfer laser onto the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the transfer destination.

[0114] Furthermore, a third aspect of the transfer method of the present invention is a transfer method that includes: preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on the surface of the resin layer opposite the substrate; irradiating a transfer laser onto the substrate from the surface of the substrate opposite the resin layer so as to suppress direct ablation of the resin layer by the transfer laser, thereby heating the surface of the structure that contacts the resin layer, and thermally decomposing at least a portion of the resin layer at the interface where the structure and the resin layer contact; and transferring the structure from the release plate to a transfer destination.

[0115] Furthermore, a transfer unit of a first aspect of the present invention is a transfer unit that transfers a structure to a transfer destination, and includes: a light source that oscillates a transfer laser; a release plate that includes a substrate, a resin layer provided on the substrate, and a structure held on the surface of the resin layer opposite the substrate, and the holding thickness of a portion of the resin layer located between the substrate and the structure is a thickness that makes the transmittance of the transfer laser 50% or more; a holding mechanism configured to hold the transfer destination; an alignment mechanism configured to position the light source and the holding mechanism opposite each other with the release plate sandwiched therebetween; and a controller configured to control the oscillation of the transfer laser by the light source so that the transfer laser is incident on the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate.

[0116] Furthermore, a transfer unit according to a second aspect of the present invention is a transfer unit that transfers a structure to a transfer destination, and includes: a light source that oscillates a transfer laser; a release plate that includes a substrate, a resin layer provided on the substrate, and a structure held on the surface of the resin layer opposite the substrate, wherein the holding thickness of the portion of the resin layer located between the substrate and the structure is 0.1 μm or less; a holding mechanism configured to hold the transfer destination; an alignment mechanism configured to position the light source and the holding mechanism opposite each other with the release plate sandwiched therebetween; and a controller configured to control the oscillation of the transfer laser by the light source so that the transfer laser is incident on the substrate from the surface of the substrate opposite the resin layer, with an energy density such that at least a portion of the resin layer remains on the substrate.

[0117] Furthermore, a transfer unit according to a third aspect of the present invention is a transfer unit for transferring a structure to a transfer destination, comprising: a light source for oscillating a transfer laser; a release plate including a substrate, a resin layer provided on the substrate, and a structure held on the surface of the resin layer opposite the substrate; and a controller configured to control the oscillation of the transfer laser by the light source so that the transfer laser is incident on the substrate from the surface of the substrate opposite the resin layer so as to suppress direct ablation of the resin layer by the transfer laser, thereby heating the surface of the structure that contacts the resin layer and thermally decomposing at least a portion of the resin layer at the interface where the structure and the resin layer contact, and transferring the structure from the release plate to the transfer destination.

[0118] Furthermore, a release plate according to a first aspect of the present invention is a release plate used to transfer a structure to a transfer destination using a transfer laser, and includes a substrate, a resin layer provided on the substrate, and a structure held on the surface of the resin layer opposite the substrate, wherein the holding thickness of the portion of the resin layer located between the substrate and the structure is such that the transmittance of the transfer laser is 50% or more.

[0119] A second aspect of the release plate of the present invention is a release plate used to transfer a structure to a transfer destination using a transfer laser, and includes: a substrate; a resin layer provided on the substrate; and a structure held on the surface of the resin layer opposite the substrate, wherein the holding thickness of the portion of the resin layer located between the substrate and the structure is 0.1 μm or less.

[0120] Furthermore, the release plate precursor substrate of the present invention is a release plate precursor substrate used to manufacture a release plate that transfers a structure to a transfer destination using a transfer laser, and has a base material and a resin layer provided on the base material, wherein the thickness of the resin layer is 0.4 μm or less.

[0121] Furthermore, a first aspect of the present invention provides a method for manufacturing a display device, which involves transferring a structure to a wiring board, and includes: preparing a wiring board; preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on the surface of the resin layer opposite the substrate, wherein the holding thickness of the portion of the resin layer located between the substrate and the structure is such that the transmittance of the transfer laser is 50% or more; and irradiating the transfer laser onto the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the wiring board.

[0122] Furthermore, a second aspect of the present invention relates to a method for manufacturing a display device, which is a method for manufacturing a display device that transfers a structure to a wiring substrate, and includes: preparing a wiring substrate; preparing a release plate that includes a substrate, a resin layer provided on the substrate, and a structure held on the surface of the resin layer opposite the substrate, wherein the holding thickness of the portion of the resin layer located between the substrate and the structure is 0.1 μm or less; and irradiating a transfer laser onto the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the wiring substrate.

[0123] Furthermore, a third aspect of the present invention provides a method for manufacturing a display device, which transfers a structure to a wiring board, and includes: preparing a wiring board; preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on the surface of the resin layer opposite the substrate; and irradiating a transfer laser onto the substrate from the surface of the substrate opposite the resin layer so as to suppress direct ablation of the resin layer by the transfer laser, thereby heating the surface of the structure that contacts the resin layer and thermally decomposing at least a portion of the resin layer at the interface where the structure and the resin layer contact, and transferring the structure from the release plate to the wiring board.

[0124] Furthermore, a first aspect of the present invention provides a method for manufacturing a mounting substrate, which transfers a structure to a wiring board, and includes: preparing a wiring board; preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, the resin layer having a holding thickness at a portion located between the substrate and the structure such that the transmittance of the transfer laser is 50% or more; and irradiating the transfer laser onto the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the wiring board.

[0125] Furthermore, a second aspect of the present invention provides a method for manufacturing a mounting substrate, which transfers a structure to a wiring board, and includes: preparing a wiring board; preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, wherein the holding thickness of a portion of the resin layer located between the substrate and the structure is 0.1 μm or less; and irradiating the transfer laser onto the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the wiring board.

[0126] A third aspect of the present invention provides a method for manufacturing a mounting substrate, which transfers a structure to a wiring board, and includes: preparing a wiring board; preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate; and applying a transfer laser to the substrate from a surface of the substrate opposite the resin layer so as to suppress direct ablation of the resin layer by the transfer laser, thereby generating heat at a surface of the structure in contact with the resin layer and thermally decomposing at least a portion of the resin layer at the interface where the structure and the resin layer are in contact; and transferring the structure from the release plate to the wiring board.

[0127] The present invention will be described in detail below, but the present invention is not limited thereto.

[0128] [Transfer Unit] <First Aspect> A transfer unit according to a first aspect of the present invention is a transfer unit that transfers a structure to a transfer destination, and includes: a light source that oscillates a transfer laser; a release plate that includes a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, wherein the holding thickness of a portion of the resin layer located between the substrate and the structure is such that the transmittance of the transfer laser is 50% or more; a holding mechanism configured to hold the transfer destination; an alignment mechanism configured to position the light source and the holding mechanism opposite each other with the release plate therebetween; and a controller configured to control oscillation of the transfer laser by the light source so that the transfer laser is incident on the substrate from the surface of the substrate opposite the resin layer, at an energy density such that at least a portion of the resin layer remains on the substrate.

[0129] Examples of the transfer unit according to the first aspect of the present invention will be described below with reference to Figures 1 to 3. However, the transfer unit according to the first aspect of the present invention is not limited to the examples shown in Figures 1 to 3.

[0130] The transfer unit 10 shown in FIG. 1 is a transfer unit that transfers a structure 20 onto a transfer destination 30 .

[0131] The transfer unit 10 shown in FIG. 1 includes a light source 2 , a release plate 1 , a holding mechanism 3 , an alignment mechanism 4 , and a controller 5 .

[0132] The light source 2 is configured to oscillate a transfer laser L. In the example of Fig. 1, the light source 2 includes a laser oscillator 21 that oscillates the transfer laser L and a mirror 22 that changes the orientation of the laser oscillator 21, but is not limited to this configuration. For example, the light source 2 may also include a galvano scanner that includes the mirror 22, a scanner that drives the mirror 22, and a controller that controls the mirror 22 and the scanner.

[0133] The laser oscillator 21 may be one that pulses the transfer laser L or one that continuously oscillates the transfer laser L. The laser oscillator 21 that pulses the transfer laser L is preferable because it can irradiate only appropriate locations with the transfer laser at an appropriate energy density.

[0134] The light source 2 may include, between the laser oscillator 21 and the release plate 1, a shaping optical system that shapes the energy distribution of the transfer laser L and / or a photomask that adjusts the irradiation shape.

[0135] The wavelength of the transfer laser L is not particularly limited. The transfer laser L can be, for example, an excimer laser (KrF excimer laser) having a wavelength of 248 nm. Other examples include an ArF excimer laser (wavelength 193 nm), a XeCl excimer laser (wavelength 308 nm), and a XeF excimer laser (wavelength 353 nm). From the viewpoints of proven use and ease of availability, a KrF excimer laser is preferable.

[0136] FIG. 2 is a schematic enlarged cross-sectional view of a part of the release plate 1 included in the transfer unit 10 shown in FIG.

[0137] The release plate 1 includes a substrate 11, a resin layer 12 provided on the substrate 11, and structures 20 held on the surface of the resin layer 12 opposite to the substrate 11. In the example of FIG. 1 , the release plate 1 includes a plurality of structures 20.

[0138] The substrate 11 is not particularly limited, but may be made of, for example, quartz. The substrate 11 preferably has a transmittance of 90% or more for the transfer laser L. However, as will be described in detail below, in the transfer unit 10 of the first embodiment of the present invention, the retention thickness T of the portion 12B of the resin layer 12 located between the substrate 11 and the structure 20 is １ The transmittance of the transfer laser L through the substrate 11 is not particularly limited as long as the thickness of the substrate 11 is such that the transmittance of the transfer laser L is 50% or more. If the transmittance of the transfer laser L through the substrate 11 is 90% or more, the attenuation of the energy of the transfer laser L from the light source 2 in the substrate layer 11 can be suppressed, thereby enabling transfer with high energy efficiency.

[0139] The thickness of the substrate 11 can be, for example, 0.1 mm or more and 1.0 mm or less, but is not particularly limited.

[0140] The thickness T of the portion 12B of the resin layer 12 located between the substrate 11 and the structure 20 １ is a thickness at which the transmittance of the transfer laser L is 50% or more. The transmittance of the transfer laser L through the portion 12B of the resin layer 12 depends on, for example, the wavelength of the transfer laser L, the material of the resin layer 12, and the thickness T １ The retention thickness T １ The thickness of the resin layer 12 is preferably such that the transmittance of the transfer laser L is 70% or more. Here, the transmittance refers to the transmittance when the transfer laser L is incident perpendicularly to the surface of the resin layer 12, in other words, the transmittance in the thickness direction of the resin layer 12. This means that the absorption rate of the transfer laser L in the resin layer 12 is less than 50%, which effectively suppresses ablation of the resin layer 12 or allows for gentle ablation. The upper limit of the transmittance is 100%, but it may be approximately 90% or less from the viewpoint of easy material availability and ensuring holding power.

[0141] The material of the resin layer 12 is not particularly limited, but the resin layer 12 can include, for example, polyimide, benzocyclobutene resin, or silicone-based resin.

[0142] Resin layer 12 retention thickness T １ is preferably 0.1 μm or less, and more preferably 0.06 μm or less. For example, the transmittance of a portion of the polyimide resin layer 12 having a thickness of 0.1 μm for a transfer laser L having a wavelength of 248 nm is 55% or more. Also, for example, the transmittance of a portion of the polyimide resin layer 12 having a thickness of 0.05 μm for a transfer laser L having a wavelength of 248 nm is 74% or more.

[0143] In conventional techniques, materials such as polyimide forming the resin layer 12 are designed to have a relatively high transfer laser absorption rate and to strongly ablate the resin layer for the purpose of active ablation. This results in uncontrolled ablation, leading to the aforementioned problem of significant residues from the resin layer 12 remaining on the structure after transfer. Furthermore, in conventional techniques, clumps of residue sometimes remain scattered randomly, making removal of the residue difficult. The inventors have discovered that even in resin layer 12 made of a material with a high transfer laser absorption rate that results in such strong ablation, ablation can be suppressed or gentler ablation can be achieved by reducing the amount of transfer laser absorbed by the resin layer in the portion holding the structure (portion 12B). This can be achieved, for example, by controlling the transmittance and thickness of the resin layer in the portion holding the structure (portion 12B). It can also be achieved by controlling the transmittance of the material used in the resin layer.

[0144] In the resin layer 12, as shown in FIG. 2, the region other than where the structures 13 are arranged has a retention thickness T １ That is, the thickness T of the portion 12C may be ２ is the holding thickness T １ In the transfer unit 10 of the present invention, the resin layer 12 has a holding thickness T １ In order to obtain a release plate having a structure, there is a technique in which a structure provided on another substrate is pressed onto a release plate precursor substrate and transferred by the difference in adhesive force. １ The thickness of the other part is T ２ It will be thinner than.

[0145] The thickness T of the portion 12C of the resin layer 12 ２ is not particularly limited, but can be, for example, more than 0.1 μm and 0.4 μm or less.

[0146] Holding thickness T １ The thickness T of the portion 12C ２As a method for making the thickness smaller than T, for example, there is a method of applying pressure so as to press the structure into the resin layer when stacking the structure on the release plate precursor substrate. By applying pressure in this way, it is possible to selectively reduce the thickness of only the region where the structure is arranged and its surroundings. Although it depends on the shape and size of the structure, the strength and time of pressure, for example, the thickness can be reduced to T １ is the thickness T of the portion 12C ２ The size can be set to about two-thirds to four-fifths of the original size.

[0147] The structure 20 is a transfer target to be transferred to the transfer destination 30. The structure 20 is not particularly limited. For example, the structure 20 may be an LED chip such as a micro LED or a mini LED, or may be a semiconductor chip.

[0148] The constituent material of the structure 20 is not particularly limited, but for example, the surface 20A of the structure 20 in contact with the resin layer 12 can contain gallium nitride (GaN) or gallium phosphide (GaP).

[0149] In the transfer unit 10 shown in FIG. 1, the release plate 1 is held by a holder 41 .

[0150] The holding mechanism 3 is configured to hold the transfer destination 30 .

[0151] The transfer destination 30 is not particularly limited as long as it can receive the structure 20. If the structure 20 is an LED chip, the transfer destination 30 may be a wiring board of a display device. Alternatively, if the structure 20 is a semiconductor chip, the transfer destination 30 may be a wiring board of a mounting board.

[0152] The details of the holding mechanism 3 can be changed as appropriate according to the shape of the transfer destination 30. In the example of Fig. 1, the holding mechanism 3 is a stage on which the transfer destination 30 is placed and held.

[0153] The alignment mechanism 4 is configured to position the light source 2 and the holding mechanism 3 opposite each other with the release plate 1 therebetween. Although not limited thereto, in the example of the transfer unit 10 shown in FIG. 1 , the alignment mechanism 4 includes a holder 41 that holds the release plate 1, a mechanism (not shown) that positions each component of the light source 2, and a mechanism (not shown) that positions the holding mechanism 3.

[0154] The controller 5 is configured to control the oscillation of the transfer laser L by the light source 2. More specifically, the controller 5 is configured to control the oscillation of the transfer laser L by the light source 2 so that the transfer laser L is incident on the surface of the substrate 11 opposite to the resin layer 12, with an energy density such that at least a portion of the resin layer 12 remains on the substrate 11.

[0155] The transfer unit 10 of the first embodiment may, for example, as shown in FIG. 3, thermally decompose at least a portion 12A of the resin layer 12 at the interface 13 where the structure 20 and the resin layer 12 are in contact, and transfer the structure 20 from the release plate 1 to the transfer destination 30.

[0156] For example, in the transfer unit 10 of the first aspect, thermal decomposition of the resin layer 12 at the interface 13 may occur when the transfer laser L transmitted through the substrate 11 and the resin layer 12 causes the surface 20A of the structure 20 in contact with the resin layer 12 to generate heat at a temperature equal to or higher than the thermal decomposition temperature of the resin layer 12. Furthermore, the vicinity of the interface of the structure 20 in contact with the resin layer 12 may contain a material with a high absorption rate of the transfer laser L.

[0157] Other details of the transfer unit 10 will be described later.

[0158] By using the transfer unit 10 according to the first aspect of the present invention, it is possible to carry out the transfer method according to the first aspect of the present invention, which will be described in detail below. The detailed reasons for this will be explained in the transfer method below, but by using the transfer unit according to the first aspect of the present invention, residues originating from the resin layer (retention layer) 12 on the structure 20 after transfer can be reduced.

[0159] The release plate 1 provided in the transfer unit 10 of the first embodiment described above is the release plate of the first embodiment of the present invention. That is, the release plate 1 of the first embodiment of the present invention is a release plate 1 used to transfer the structures 20 to the transfer destination 3 by the transfer laser L, and includes a substrate 11, a resin layer 12 provided on the substrate 11, and the structures 20 held on the surface of the resin layer 12 opposite to the substrate 11, and has a holding thickness T of a portion 12B of the resin layer 12 located between the substrate 11 and the structures 20. １ is a release plate having a thickness that allows the transmittance of the transfer laser L to be 50% or more.

[0160] <Second Aspect> A transfer unit according to a second aspect of the present invention is a transfer unit that transfers a structure to a transfer destination, and includes: a light source that oscillates a transfer laser; a release plate that includes a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, wherein the holding thickness of a portion of the resin layer located between the substrate and the structure is 0.1 μm or less; a holding mechanism configured to hold the transfer destination; an alignment mechanism configured to position the light source and the holding mechanism opposite each other with the release plate therebetween; and a controller configured to control oscillation of the transfer laser by the light source so that the transfer laser is incident on the substrate from the surface of the substrate opposite the resin layer, at an energy density such that at least a portion of the resin layer remains on the substrate.

[0161] 1 to 3 can also be said to be a transfer unit according to a second aspect of the present invention. More specifically, the transfer unit 10 shown in FIGS. 1 to 3 has a retention thickness T １ The release plate 1 has a thickness of 0.1 μm or less.

[0162] Other details can be the same as those of the transfer unit 10 of the first embodiment.

[0163] By using the transfer unit 10 according to the second aspect of the present invention, it is possible to carry out the transfer method according to the second aspect of the present invention, which will be described in detail below. The detailed reasons for this will be explained in the transfer method below, but by using the transfer unit according to the second aspect of the present invention, it is possible to reduce residues originating from the resin layer (retention layer) 12 on the structure 20 after transfer.

[0164] The release plate 1 provided in the transfer unit 10 of the second embodiment described above is the release plate of the second embodiment of the present invention. That is, the release plate 1 of the second embodiment of the present invention is a release plate 1 used to transfer the structures 20 to the transfer destination 3 by the transfer laser L, and includes a substrate 11, a resin layer 12 provided on the substrate 11, and the structures 20 held on the surface of the resin layer 12 opposite to the substrate 11, and has a holding thickness T of a portion 12B of the resin layer 12 located between the substrate 11 and the structures 20. １ The release plate has a thickness of 0.1 μm or less.

[0165] The release plate 1 of the second aspect of the present invention can be manufactured by, for example, preparing a release plate precursor substrate having a base material 11 and a resin layer 12 provided on the base material 11, the resin layer 12 having a thickness of 0.4 μm or less, and holding the structures 20 on the surface 11 of the resin layer 12 of the release plate precursor substrate opposite the base material 11. When holding the structures 20, the structures 20 are pressed against the resin layer 12, and the holding thickness T of the portion 12B of the resin layer 12 located between the base material 11 and the structures 20 is set to 0.4 μm or less. １ The release plate precursor substrate used here is the release plate precursor substrate of the present invention.

[0166] <Third Aspect> A transfer unit according to a third aspect of the present invention is a transfer unit that transfers a structure to a transfer destination, and includes: a light source that oscillates a transfer laser; a release plate that includes a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate; and a controller configured to control the oscillation of the transfer laser from the light source so that the transfer laser is incident on the substrate from a surface of the substrate opposite the resin layer so as to suppress direct ablation of the resin layer by the transfer laser, thereby heating the surface of the structure that contacts the resin layer and thermally decomposing at least a part of the resin layer at the interface where the structure and the resin layer contact, and transferring the structure from the release plate to the transfer destination.

[0167] 1 to 3 can also be considered, from another aspect, to be a transfer unit of a third aspect of the present invention. More specifically, the transfer unit 10 shown in FIGS. 1 to 3 can include a controller 5 configured to control the oscillation of a transfer laser L from a light source 2 so that the transfer laser L is incident on the substrate 11 from the surface of the substrate 11 opposite the resin layer 12, so as to suppress direct ablation of the resin layer 12 by the transfer laser, thereby heating a surface 20A of the structure 20 that contacts the resin layer 12, and thermally decomposing at least a portion 12A of the resin layer 12 at an interface 13 where the structure 20 and the resin layer 12 contact, thereby transferring the structure 20 from the release plate 1 to a transfer destination 3.

[0168] Other details can be the same as those of the transfer unit 10 of the first embodiment.

[0169] By using the transfer unit 10 according to the third aspect of the present invention, it is possible to carry out the transfer method according to the third aspect of the present invention, which will be described in detail below. The detailed reason for this will be explained in the transfer method below, but it is possible to reduce residues originating from the resin layer (retention layer) 12 on the structure 20 after transfer.

[0170] [Transfer Method] <First Aspect> A transfer method according to a first aspect of the present invention is a transfer method for transferring a structure to a transfer destination, the transfer method comprising: preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, the resin layer having a thickness such that a portion of the resin layer held between the substrate and the structure has a thickness that provides a transfer laser transmittance of 50% or more; and applying the transfer laser to the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the transfer destination.

[0171] The transfer method of the first aspect of the present invention can be carried out, for example, using the transfer unit of the first aspect of the present invention, although the transfer method of the first aspect of the present invention can also be carried out in other devices or other units.

[0172] The transfer method according to the first embodiment of the present invention will be described below with reference to FIGS.

[0173] First, the release plate 1 shown in FIGS. 1 and 2 includes a substrate 11, a resin layer 12 provided on the substrate 11, and structures 20 held on the surface of the resin layer 12 opposite to the substrate 11, and the holding thickness T of a portion 12B of the resin layer 20 located between the substrate 11 and the structures 20 is １ A release plate 1 having a thickness such that the transmittance of the transfer laser L is 50% or more is prepared.

[0174] Next, a transfer laser L is incident on the substrate 11 from the side opposite the resin layer 12 of the substrate 11 with an energy density such that at least a portion of the resin layer 12 remains on the substrate 11, and the structure 20 is transferred from the release plate 1 to the transfer destination 3.

[0175] In this way, the retained thickness T of the portion 12B of the resin layer 12 located between the substrate 11 and the structure 20 １By irradiating the transfer laser L onto the substrate 11 under the above conditions for a release plate 1 having a thickness such that the transmittance of the transfer laser L is 50% or more, the structure 20 can be peeled off from the release plate 1 at the interface 13 between the resin layer 12 and the structure 20.

[0176] In conventional techniques, materials such as polyimide forming the resin layer 12 are designed to have a relatively high transfer laser absorption rate and to strongly ablate the resin layer for the purpose of active ablation. This results in uncontrolled ablation, leading to the aforementioned problem of significant residues from the resin layer 12 remaining on the structure after transfer. Furthermore, in conventional techniques, clumps of residue sometimes remain scattered randomly, making removal of the residue difficult. The inventors have discovered that even in resin layer 12 made of a material with a high transfer laser absorption rate that results in such strong ablation, ablation can be suppressed or gentler ablation can be achieved by reducing the amount of transfer laser absorbed by the resin layer in the portion holding the structure (portion 12B). This can be achieved, for example, by controlling the transmittance and thickness of the resin layer in the portion holding the structure (portion 12B). It can also be achieved by controlling the transmittance of the material used in the resin layer.

[0177] As described above, the transfer method of the present invention can reduce residues originating from the resin layer (retention layer) 12 on the structure 20 after transfer.

[0178] Furthermore, according to the transfer method of the first aspect of the present invention, the structure 20 can be transferred to the transfer destination 30 with high precision.

[0179] The energy density at which at least a part of the resin layer 12 remains on the substrate 11 can be determined by, for example, the material of the resin layer 12 and the retained thickness T １ , may depend on the material of the surface 20A of the structure 20 that contacts the resin layer 12, and the wavelength of the transfer laser L.

[0180] For example, the resin layer 12 is made of polyimide, and the holding thickness T １When the transfer laser L having a wavelength of 248 nm is applied to the surface 20A of the structure 20 that is in contact with the resin layer 12 and the surface 20A is made of gallium nitride, ... ２ ~3000mJ / cm ２ By irradiating with an energy density in the range of 1000 mJ / cm, it is possible to peel off the structure 20 from the release plate 1, more specifically, at the interface 13 between the resin layer 12 and the structure 20, with at least a portion of the resin layer 12 remaining on the substrate 11. The irradiation may be performed multiple times (for example, 5 to 10 times), and the irradiation may be performed at an energy density of 1000 mJ / cm. ２ When irradiated ten times, the dose is 100 mJ / cm ２ ×10.

[0181] The resin layer 12 is made of polyimide, and the holding thickness T １ In the case where the transfer laser L having a wavelength of 248 nm is applied at 1000 mJ / cm 2 , and the surface 20A of the structure 20 that is in contact with the resin layer 12 is made of gallium nitride, ２ ~2000mJ / cm ２ By irradiating with an energy density in this range, the structure 20 can be peeled off from the release plate 1, with at least a portion of the resin layer 12 remaining on the substrate 11, more specifically at the interface 13 between the resin layer 12 and the structure 20.

[0182] The resin layer 12 is made of polyimide, and the holding thickness T １ When the transfer laser L having a wavelength of 248 nm is applied at 1000 mJ / cm 2 and the surface 20A of the structure 20 that contacts the resin layer 12 is made of gallium phosphide, ２ ~3000mJ / cm ２ By irradiating with an energy density in this range, the structure 20 can be peeled off from the release plate 1, with at least a portion of the resin layer 12 remaining on the substrate 11, more specifically at the interface 13 between the resin layer 12 and the structure 20.

[0183] The resin layer 12 is made of polyimide, and the holding thickness T １ In the case where the transfer laser L having a wavelength of 248 nm is irradiated with a laser beam having a wavelength of 1000 mJ / cm 2 , and the surface 20A of the structure 20 in contact with the resin layer 12 is made of gallium phosphide,２ ~2000mJ / cm ２ By irradiating with an energy density in this range, the structure 20 can be peeled off from the release plate 1, with at least a portion of the resin layer 12 remaining on the substrate 11, more specifically at the interface 13 between the resin layer 12 and the structure 20.

[0184] The resin layer 12 is made of polycyclobutene resin, and the holding thickness T １ When the transfer laser L having a wavelength of 248 nm is applied to the surface 20A of the structure 20 that is in contact with the resin layer 12 and the surface 20A is made of gallium nitride, ... ２ ~3000mJ / cm ２ By irradiating with an energy density in this range, the structure 20 can be peeled off from the release plate 1, with at least a portion of the resin layer 12 remaining on the substrate 11, more specifically at the interface 13 between the resin layer 12 and the structure 20.

[0185] The resin layer 12 is made of polycyclobutene resin, and the holding thickness T １ In the case where the transfer laser L having a wavelength of 248 nm is applied at 1000 mJ / cm 2 , and the surface 20A of the structure 20 that is in contact with the resin layer 12 is made of gallium nitride, ２ ~2000mJ / cm ２ By irradiating with an energy density in this range, the structure 20 can be peeled off from the release plate 1, with at least a portion of the resin layer 12 remaining on the substrate 11, more specifically at the interface 13 between the resin layer 12 and the structure 20.

[0186] The resin layer 12 is made of polycyclobutene resin, and the holding thickness T １ When the transfer laser L having a wavelength of 248 nm is applied at 1000 mJ / cm 2 and the surface 20A of the structure 20 that contacts the resin layer 12 is made of gallium phosphide, ２ ~3000mJ / cm ２ By irradiating with an energy density in this range, the structure 20 can be peeled off from the release plate 1, with at least a portion of the resin layer 12 remaining on the substrate 11, more specifically at the interface 13 between the resin layer 12 and the structure 20.

[0187] The resin layer 12 is made of polycyclobutene resin, and the holding thickness T １ In the case where the transfer laser L having a wavelength of 248 nm is irradiated with a laser beam having a wavelength of 1000 mJ / cm 2 , and the surface 20A of the structure 20 in contact with the resin layer 12 is made of gallium phosphide, ２ ~2000mJ / cm ２ By irradiating with an energy density in this range, the structure 20 can be peeled off from the release plate 1, with at least a portion of the resin layer 12 remaining on the substrate 11, more specifically at the interface 13 between the resin layer 12 and the structure 20.

[0188] According to the first transfer method of the present invention, for example, the surface 20A of the structure 20 can absorb the irradiation of the transfer laser L and generate heat. The surface 20A of the structure 20 can become at or above the thermal decomposition temperature of the resin layer 12. The heat thus generated can thermally decompose the part 12A of the resin layer 12 that constitutes the interface 13.

[0189] That is, according to the transfer method of the first aspect of the present invention, for example, at least a portion 12A of resin layer 12 can be thermally decomposed at interface 13 where structure 20 and resin layer 12 are in contact. This thermal decomposition causes structure 20 to be peeled off at interface 13 where structure 20 and resin layer 12 are in contact, and structure 20 can be transferred from release plate 1 to transfer destination 3.

[0190] <Second Aspect> A transfer method according to a second aspect of the present invention is a transfer method for transferring a structure to a transfer destination, the transfer method comprising: preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite to the substrate, wherein the holding thickness of a portion of the resin layer located between the substrate and the structure is 0.1 μm or less; and applying a transfer laser to the substrate from the surface of the substrate opposite to the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the transfer destination.

[0191] The transfer method of the second aspect of the present invention can be carried out, for example, using the transfer unit of the second aspect of the present invention, although the transfer method of the second aspect of the present invention can also be carried out in other devices or other units.

[0192] The transfer method according to the second embodiment of the present invention will be described below with reference to FIGS.

[0193] First, the release plate 1 shown in FIGS. 1 and 2 includes a substrate 11, a resin layer 12 provided on the substrate 11, and structures 20 held on the surface of the resin layer 12 opposite to the substrate 11, and the holding thickness T of a portion 12B of the resin layer 12 located between the substrate 11 and the structures 20 is １ A release plate 1 having a surface roughness of 0.1 μm or less is prepared.

[0194] The irradiation conditions of the transfer laser L are the same as those in the first embodiment.

[0195] In this way, the retained thickness T of the portion 12B of the resin layer 12 located between the substrate 11 and the structure 20 １ By irradiating the transfer laser L onto the substrate 11 under the above conditions for the release plate 1 having a thickness of 0.1 μm, the structure 20 can be peeled off from the release plate 1 at the interface 13 between the resin layer 12 and the structure 20.

[0196] Therefore, according to the transfer method of the second aspect of the present invention, for the same reason as in the transfer method of the first aspect, it is possible to reduce residues originating from the resin layer (retention layer) 12 on the structure 20 after transfer. Furthermore, according to the transfer method of the second aspect of the present invention, it is possible to transfer the structure 20 to the transfer destination 30 with high accuracy.

[0197] <Third Aspect> A transfer method of a third aspect of the present invention is a transfer method including: preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate; and applying a transfer laser to the substrate from the surface of the substrate opposite the resin layer so as to suppress direct ablation of the resin layer by the transfer laser, thereby generating heat at the surface of the structure in contact with the resin layer and thermally decomposing at least a portion of the resin layer at the interface where the structure and the resin layer are in contact; and transferring the structure from the release plate to a transfer destination.

[0198] The transfer method of the third aspect of the present invention can be carried out, for example, using the transfer unit of the third aspect of the present invention, although the transfer method of the third aspect of the present invention can also be carried out in other devices or other units.

[0199] The transfer method according to the third embodiment of the present invention will be described below with reference to FIGS.

[0200] First, a release plate 1 shown in Figures 1 and 2 is prepared, that is, a release plate 1 including a substrate 11, a resin layer 12 provided on the substrate 11, and a structure 20 held on the surface of the resin layer 12 opposite the substrate 11.

[0201] Next, the transfer laser L is incident on the substrate 11 from the side opposite to the resin layer 12 so as to suppress direct ablation of the resin layer 12 by the transfer laser L, causing heat to be generated on the surface of the structure 20 that contacts the resin layer 12, causing thermal decomposition of at least a portion of the resin layer 12 at the interface 13 where the structure 20 and the resin layer 12 contact, and transferring the structure 20 from the release plate 1 to the transfer destination.

[0202] In this way, by irradiating the transfer laser L onto the base material 11 under the above conditions for the release plate 1 which includes the base material 11, the resin layer 12 and the structure 20, the structure 20 can be peeled off from the release plate 1 at the interface 13 between the resin layer 12 and the structure 20.

[0203] Therefore, according to the transfer method of the third aspect of the present invention, for the same reason as in the transfer method of the first aspect, it is possible to reduce residues originating from the resin layer (retention layer) 12 on the structure 20 after transfer. Furthermore, according to the transfer method of the third aspect of the present invention, it is possible to transfer the structure 20 to the transfer destination 30 with high accuracy.

[0204] Optional matters regarding the transfer method and transfer unit of the present invention will be described below.

[0205] For example, in the present invention, thermal decomposition of the resin layer 12 at the interface 13 can be caused by a transfer laser L that has passed through the substrate 11 and the resin layer 12, causing the surface 20A of the structure 20 that contacts the resin layer 12 to heat up to a temperature above the thermal decomposition temperature of the resin layer 12.

[0206] If the thermal decomposition temperature of the material of the surface 20A of the structure 20 that is in contact with the resin layer 12 is higher than the thermal decomposition temperature of the resin layer 12, the structure 20 can be transferred while preventing deterioration.

[0207] In particular, deterioration of the structure 20 can be more reliably prevented if the thermal decomposition temperature of the constituent material of the surface 20A of the structure 20 that is in contact with the resin layer 12 is higher by 200°C or more than the thermal decomposition temperature of the resin layer 12. The upper limit of the difference in thermal decomposition temperature is not particularly limited, but can be, for example, about 500°C.

[0208] In addition, if the surface 20A of the structure 20 in contact with the resin layer 12 becomes a thin film that is easily removed by thermal decomposition, the surface 20A of the structure 20 in contact with the resin layer 12 may be heated to a temperature above the thermal decomposition temperature. For example, if gallium nitride is used as the material for the structure 20, significant thermal decomposition occurs at temperatures above 900°C, producing a gallium metal film, which can be removed using an acidic aqueous solution such as hydrochloric acid. Depending on the solubility of the thin film produced, removal using not only the above-mentioned acidic aqueous solution but also an alkaline aqueous solution can be used. This reduces the restrictions on the materials used for the structure 20 and the resin layer 12, allowing for a wider range of combinations to be employed.

[0209] For example, the resin layer 12 may contain polyimide, and the surface 20A of the structure 20 in contact with the resin layer 12 may contain gallium nitride.

[0210] Such a combination of materials is suitable when the wavelength of the transfer laser L is 248 nm.

[0211] In another embodiment, for example, the resin layer 12 may contain polyimide, and the surface 20A of the structure 20 in contact with the resin layer 12 may contain gallium phosphide.

[0212] In another embodiment, for example, the resin layer 12 may contain benzocyclobutene, and the surface 20A of the structure 20 in contact with the resin layer 12 may contain gallium phosphide.

[0213] 1 to 3 show an example in which release plate 1 and transfer destination 30 are separated by a gap, i.e., a gap LIFT. With the transfer method and transfer unit of the present invention, even if the gap is, for example, 300 μm, it is possible to transfer structure 20 with high precision while reducing residues originating from resin layer (retention layer) 12 on structure 20 after transfer.

[0214] Alternatively, in the transfer method and transfer unit 1 of the present invention, the release plate 1 and the transfer destination 30 can be arranged in a state in which the structure 20 is in contact with the transfer destination 30, as shown in Fig. 4, for example. LIFT performed in this state can be called, for example, contact LIFT. If the transfer method of the present invention is contact LIFT, the structure 20 can be transferred with even higher accuracy.

[0215] Furthermore, with the transfer method and transfer unit of the present invention, for example, the thickness of resin layer 12 can be reduced, and the initial speed of movement of structure 20 from release plate 1 to transfer destination 3 can be reduced. As a result, even in the case of gap LIFT, even if the adhesiveness or cushioning of the receiving surface of transfer destination 3 is low, or even if structure 20 is easily damaged (large or has steps), it is possible to transfer structure 20 while preventing damage to structure 20.

[0216] Furthermore, Gap LIFT is useful when elements of various heights are transferred as structures 20 to the transfer destination 3 .

[0217] Furthermore, according to the transfer method of the present invention, it is possible to minimize ablation of the resin layer 12 compared to conventional techniques. In other words, it is possible to concentrate the thermal decomposition of the resin layer 12 near the interface with the structure 20. This makes it easy to reduce residues originating from the resin layer 12 at the transfer destination 30. Furthermore, when the structure 20 is an LED chip and the surface that contacts the resin layer 12 is the light-emitting surface, it is important to suppress the generation of the residues and carbon-based debris.

[0218] The inventors discovered that when the transmittance of the resin layer between the structure and the release plate substrate is low, relatively severe ablation occurs, easily generating residue and its clumps. They also discovered that increasing the transmittance can moderate the ablation and reduce the residue and its clumps caused by severe ablation. In particular, controlling the transmittance makes it easier to control the location in the thickness direction where ablation occurs. For example, at a transmittance of around 40%, ablation can occur at a depth midway in the thickness direction. At this time, a portion of the resin layer remains on the transferred chip side, but because ablation is controlled, the clumps of residue are suppressed. In other words, it is believed that the remaining resin has become a thin coating due to the control of ablation. Such a thin coating is easier to remove than clumps of residue and can be removed by etching processes such as laser irradiation, wet etching, and dry etching. Therefore, although the effect of thermal decomposition is relatively small, a transmittance of 40% or higher makes it easy to remove residue after transfer.

[0219] When the transmittance is 60% or higher, the aforementioned thermal decomposition can be expected. Furthermore, reducing the thickness of the resin layer is effective for increasing the transmittance. In particular, when the thickness is 0.1 μm or less, the energy density of the irradiated laser can be reduced, making it easier to remove most of the resin. This removal is thought to be achieved by thermal decomposition, gradual ablation, or a combination of these. Furthermore, a thinner resin layer also reduces the absolute amount of resin, which is thought to contribute to reducing residue. Therefore, the energy density does not need to be such that at least a portion of the resin layer remains on the substrate; most of the resin layer may be removed by thermal decomposition, gradual ablation, or a combination of these. From this perspective, the thickness of the resin layer provided on the release plate precursor substrate is preferably 0.2 μm or less, more preferably 0.1 μm or less, particularly preferably 0.09 μm or less, very preferably 0.07 μm or less, and extremely preferably 0.06 μm or less. There is no particular lower limit, but from the viewpoint of the structure retention and resin layer formability, it is approximately 0.01 μm or 0.02 μm.

[0220] [Method for manufacturing display device and method for manufacturing mounting substrate] A first aspect of the present invention is a method for manufacturing a display device that transfers a structure to a wiring board, and includes: preparing a wiring board; preparing a release plate that includes a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, wherein the holding thickness of a portion of the resin layer located between the substrate and the structure is a thickness that makes the transmittance of a transfer laser 50% or more; and irradiating the transfer laser onto the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the wiring board.

[0221] In other words, the manufacturing method of the display device of the first aspect of the present invention can also be said to be a manufacturing method that includes, in the transfer method of the first aspect of the present invention, a method of transferring a structure to a wiring substrate as the transfer destination.

[0222] According to the method for manufacturing a display device according to the first aspect of the present invention, for the reasons explained above, it is possible to manufacture a display device in which structures with reduced residues are arranged on a wiring substrate.

[0223] Furthermore, a second aspect of the present invention relates to a method for manufacturing a display device, which is a method for manufacturing a display device that transfers a structure to a wiring substrate, and includes: preparing a wiring substrate; preparing a release plate that includes a substrate, a resin layer provided on the substrate, and a structure held on the surface of the resin layer opposite the substrate, wherein the holding thickness of the portion of the resin layer located between the substrate and the structure is 0.1 μm or less; and irradiating a transfer laser onto the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the wiring substrate.

[0224] In other words, the manufacturing method of the display device of the second aspect of the present invention can also be said to be a manufacturing method that includes, in the transfer method of the second aspect of the present invention, a method of transferring a structure to a wiring substrate as the transfer destination.

[0225] According to the method for manufacturing a display device according to the second aspect of the present invention, for the reasons explained above, it is possible to manufacture a display device in which structures with reduced residues are arranged on a wiring substrate.

[0226] Furthermore, a third aspect of the present invention provides a method for manufacturing a display device, which transfers a structure to a wiring board, and includes: preparing a wiring board; preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on the surface of the resin layer opposite the substrate; and irradiating a transfer laser onto the substrate from the surface of the substrate opposite the resin layer so as to suppress direct ablation of the resin layer by the transfer laser, thereby heating the surface of the structure that contacts the resin layer and thermally decomposing at least a portion of the resin layer at the interface where the structure and the resin layer contact, and transferring the structure from the release plate to the wiring board.

[0227] In other words, the manufacturing method of the display device of the third aspect of the present invention can also be said to be a manufacturing method that includes, in the transfer method of the third aspect of the present invention, a method of transferring a structure to a wiring substrate as the transfer destination.

[0228] According to the method for manufacturing a display device according to the third aspect of the present invention, for the reasons explained above, it is possible to manufacture a display device in which structures with reduced residues are arranged on a wiring substrate.

[0229] Furthermore, a first aspect of the present invention provides a method for manufacturing a mounting substrate, which transfers a structure to a wiring board, and includes: preparing a wiring board; preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, wherein the holding thickness of a portion of the resin layer located between the substrate and the structure is such that the transmittance of a transfer laser is 50% or more; and irradiating the transfer laser onto the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the wiring board.

[0230] In other words, the method for manufacturing a mounting substrate according to the first aspect of the present invention can also be said to be a manufacturing method that includes, in the transfer method according to the first aspect of the present invention, a method of transferring a structure to a wiring board as the transfer destination.

[0231] According to the method for manufacturing a mounting board according to the first aspect of the present invention, for the reasons explained above, it is possible to manufacture a mounting board on which a structure with reduced residue is arranged on a wiring board.

[0232] Furthermore, a second aspect of the present invention provides a method for manufacturing a mounting substrate, which involves transferring a structure to a wiring board, and includes: preparing a wiring board; preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, wherein the holding thickness of a portion of the resin layer located between the substrate and the structure is 0.1 μm or less; and irradiating a transfer laser onto the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the wiring board.

[0233] In other words, the method for manufacturing a mounting substrate according to the second aspect of the present invention can also be said to be a manufacturing method that includes the transfer method according to the second aspect of the present invention, in which the transfer destination is a wiring board and the structure is transferred to the wiring board.

[0234] According to the method for manufacturing a mounting board according to the second aspect of the present invention, for the reasons explained above, it is possible to manufacture a mounting board on which a structure with reduced residue is arranged on a wiring board.

[0235] A third aspect of the present invention provides a method for manufacturing a mounting substrate, which transfers a structure to a wiring board, and includes: preparing a wiring board; preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate; and applying a transfer laser to the substrate from a surface of the substrate opposite the resin layer so as to suppress direct ablation of the resin layer by the transfer laser, thereby generating heat at a surface of the structure in contact with the resin layer and thermally decomposing at least a portion of the resin layer at the interface where the structure and the resin layer are in contact; and transferring the structure from the release plate to the wiring board.

[0236] In other words, the method for manufacturing a mounting substrate according to the third aspect of the present invention can also be said to be a manufacturing method that includes, in the transfer method according to the third aspect of the present invention, a method of transferring a structure to a wiring board as the transfer destination.

[0237] According to the method for manufacturing a mounting board according to the third aspect of the present invention, for the reasons explained above, it is possible to manufacture a mounting board on which a structure with reduced residue is arranged on a wiring board.

[0238] EXAMPLES The present invention will be specifically explained below using examples and comparative examples, but the present invention is not limited to these.

[0239] Example 1 In Example 1, the transfer unit 10 shown in FIGS. 1 to 3 was used to transfer the structure 20 by gap LIFT.

[0240] The release plate 1 was prepared including a quartz substrate 11, a 0.2 μm thick polyimide resin layer 12, and 20 micro LED chips 20 held on the surface of the substrate 11 opposite the resin layer 12. The surface 20A of the micro LED chips 20 in contact with the resin layer 12 contained gallium nitride. The holding thickness T of the portion 12B of the resin layer 12 located between the substrate 11 and the structure 20 was １ was about 0.15 μm.

[0241] The light source 2 was provided with a laser oscillator 21 capable of oscillating a pulse excimer laser having a wavelength of 248 nm as a transfer laser L.

[0242] As the transfer destination 30, a donor plate was prepared, which was made of a quartz substrate and had a silicone resin layer formed on the surface thereof.

[0243] The transmittance of the transfer laser L through the substrate 11 was 90% or more. The transmittance of the transfer laser L through the resin layer 12 having a thickness of about 0.15 μm was about 40%.

[0244] In the transfer unit prepared as described above, the alignment mechanism 4 and the controller 5 are used to transfer the image with a transfer laser L at 100 mJ / cm. ２ As a result, the transfer laser L was transmitted through the base material 11 and the resin layer 12 and irradiated onto the micro LED chip 20, thereby transferring the micro LED chip 20 from the release plate 1 to the transfer destination 30.

[0245] In Example 1, transfer to the target position was achieved with high accuracy. Furthermore, when the release plate and the micro LED chip 20 after transfer in Example 1 were observed, a portion of the resin layer 12 remained on the surface of the micro LED chip 20 and on the substrate 11.

[0246] These results show that in Example 1, ablation occurred at a depth midway in the thickness direction. At this time, part of the resin layer remained on the transferred chip side, but because the ablation was controlled, the formation of clumps of residue was suppressed. In other words, it is believed that the remaining resin became a thin coating due to the control of ablation.

[0247] Example 2 In Example 2, the transfer unit 10 shown in FIGS. 1, 2, and 4 was used to transfer the structure 20 by contact LIFT.

[0248] The release plate 1 prepared included a quartz substrate 11, a 0.05 μm thick polyimide resin layer 12, and 20 micro LED chips 20 held on the surface of the substrate 11 opposite to the resin layer 12. The surface 20A of the micro LED chips 20 in contact with the resin layer 12 contained gallium nitride.

[0249] The light source 2 was provided with a laser oscillator 21 capable of oscillating a pulse excimer laser having a wavelength of 248 nm as a transfer laser L.

[0250] As the transfer destination 30, a donor plate was prepared, which was made of a quartz substrate and had a silicone resin layer formed on the surface thereof.

[0251] The transmittance of the transfer laser L through the substrate 11 was 90% or more. The transmittance of the transfer laser L through the resin layer 12 having a thickness of about 0.05 μm was about 74%.

[0252] In the transfer unit prepared as described above, the alignment mechanism 4 and the controller 5 are used to transfer the image with a transfer laser L at 150 mJ / cm. ２As a result, the transfer laser L was transmitted through the base material 11 and the resin layer 12 and irradiated onto the micro LED chip 20, thereby transferring the micro LED chip 20 from the release plate 1 to the transfer destination 30.

[0253] In Example 2, transfer to the target position was achieved with high accuracy. Furthermore, when the release plate and the micro LED chip 20 after transfer in Example 1 were observed, the resin layer 12 was not observed on the surface of the micro LED chip 20 or on the substrate 11. Furthermore, no residue was observed on the surface of the micro LED chip 20.

[0254] From these results, it is believed that in Example 2, most of the resin layer was removed by thermal decomposition, gentle ablation, or a combination of these.

[0255] This specification includes the following aspects. [1] A transfer method for transferring a structure to a transfer destination, the transfer method comprising: preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, the release plate having a thickness such that the transmittance of a transfer laser is 50% or more at a portion of the resin layer located between the substrate and the structure; and applying the transfer laser to the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the transfer destination. [2] The transfer method described in [1], wherein the retained thickness of the resin layer is a thickness such that the transmittance of the transfer laser is 70% or more. [3] The transfer method described in [1] or [2], wherein the retained thickness of the resin layer is 0.1 μm or less. [4] The transfer method described in [2], wherein the retained thickness of the resin layer is 0.06 μm or less. [5] The transfer method according to any one of [1] to [4], wherein the region of the resin layer other than where the structures are disposed includes a portion thicker than the retention thickness. [6] The transfer method according to [5], wherein the thickness of the thick portion is greater than 0.1 μm and less than or equal to 0.4 μm. [7] The transfer method according to any one of [1] to [6], wherein at least a portion of the resin layer is thermally decomposed at the interface where the structures and the resin layer contact, and the structures are transferred from the release plate to the transfer destination. [8] The transfer method according to [7], wherein the thermal decomposition of the resin layer at the interface occurs when the transfer laser transmitted through the substrate and the resin layer heats the surface of the structures in contact with the resin layer to a temperature equal to or higher than the thermal decomposition temperature of the resin layer. [9] The transfer method according to any one of [1] to [8], wherein the thermal decomposition temperature of the constituent material of the surface of the structures in contact with the resin layer is higher than the thermal decomposition temperature of the resin layer.

[10] The transfer method according to any one of [1] to [9], wherein the thermal decomposition temperature of the constituent material of the surface of the structure in contact with the resin layer is higher by 200° C. or more than the thermal decomposition temperature of the resin layer.

[11] The transfer method according to any one of [1] to

[10] , wherein the resin layer contains a polyimide or a benzocyclobutene resin.

[12] The transfer method according to any one of [1] to

[11] , wherein the surface of the structure in contact with the resin layer contains gallium nitride or gallium phosphide.

[13] The transfer method according to any one of [1] to

[10] , wherein the resin layer contains polyimide, and the surface of the structure in contact with the resin layer contains gallium nitride.

[14] The transfer method according to any one of [1] to

[10] , wherein the resin layer contains polyimide, and the surface of the structure in contact with the resin layer contains gallium phosphide.

[15] The transfer method according to any one of [1] to

[10] , wherein the resin layer contains a benzocyclobutene resin, and the surface of the structure in contact with the resin layer contains gallium phosphide.

[16] The transfer method according to any one of [1] to

[15] , wherein the transmittance of the transfer laser through the substrate is 90% or more.

[17] The transfer method according to any one of [1] to

[16] , wherein the transfer laser is an excimer laser having a wavelength of 248 nm.

[18] A transfer method for transferring a structure to a transfer destination, the transfer method comprising: preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, the resin layer having a holding thickness of 0.1 μm or less at a portion located between the substrate and the structure; and applying a transfer laser to the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the transfer destination.

[19] The transfer method according to

[18] , wherein the transmittance of the transfer laser through the substrate is 90% or more.

[20] A transfer method for transferring a structure to a transfer destination, comprising: preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate; irradiating a transfer laser onto the substrate from the surface of the substrate opposite the resin layer so as to suppress direct ablation of the resin layer by the transfer laser, thereby heating the surface of the structure in contact with the resin layer, and thermally decomposing at least a portion of the resin layer at the interface where the structure and the resin layer are in contact; and transferring the structure from the release plate to the transfer destination.

[21] A transfer unit for transferring a structure to a transfer destination, the transfer unit comprising: a light source that oscillates a transfer laser; a substrate; a resin layer provided on the substrate; and a structure held on the surface of the resin layer opposite the substrate, the resin layer having a thickness at which the transmittance of the transfer laser is 50% or more at a portion of the resin layer located between the substrate and the structure; a holding mechanism configured to hold the transfer destination; an alignment mechanism configured to oppose the light source and the holding mechanism across the release plate; and a controller configured to control the oscillation of the transfer laser by the light source so that the transfer laser is incident on the surface of the substrate opposite the resin layer with an energy density such that at least a portion of the resin layer remains on the substrate.

[22] The transfer unit described in

[21] , wherein the held thickness of the resin layer is a thickness at which the transmittance of the transfer laser is 70% or more.

[23] The transfer unit described in

[21] or

[22] , wherein the held thickness of the resin layer is 0.1 μm or less.

[24] The transfer unit according to

[22] , wherein the retention thickness of the resin layer is 0.06 μm or less.

[25] The transfer unit according to any one of

[21] to

[24] , wherein the region of the resin layer other than where the structures are arranged includes a portion thicker than the retention thickness.

[26] The transfer unit according to

[25] , wherein the thickness of the thick portion is greater than 0.1 μm and less than or equal to 0.4 μm.

[27] The transfer unit according to any one of

[21] to

[26] , wherein at least a portion of the resin layer is thermally decomposed at the interface where the structures and the resin layer contact, and the structures are transferred from the release plate to a transfer destination.

[28] The transfer unit according to

[27] , wherein the thermal decomposition of the resin layer at the interface is caused by the transfer laser transmitted through the substrate and the resin layer heating the surface of the structures that contacts the resin layer to a temperature equal to or higher than the thermal decomposition temperature of the resin layer.

[29] A transfer unit according to any one of

[21] to

[28] , wherein the thermal decomposition temperature of the constituent material of the surface of the structure in contact with the resin layer is higher than the thermal decomposition temperature of the resin layer.

[30] The transfer unit according to any one of

[21] to

[28] , wherein the thermal decomposition temperature of the constituent material of the surface of the structure in contact with the resin layer is at least 200°C higher than the thermal decomposition temperature of the resin layer.

[31] The transfer unit according to any one of

[21] to

[30] , wherein the resin layer comprises a polyimide or a benzocyclobutene resin.

[32] The transfer unit according to any one of

[21] to

[31] , wherein the surface of the structure in contact with the resin layer comprises gallium nitride or gallium phosphide.

[33] The transfer unit according to any one of

[21] to

[30] , wherein the resin layer comprises a polyimide, and the surface of the structure in contact with the resin layer comprises gallium nitride.

[34] The transfer unit according to any one of

[21] to

[30] , wherein the resin layer comprises a benzocyclobutene resin, and the surface of the structure in contact with the resin layer comprises gallium phosphide.

[35] The transfer unit according to any one of

[21] to

[30] , wherein the resin layer contains polyimide, and the surface of the structure in contact with the resin layer contains gallium phosphide.

[36] The transfer unit according to any one of

[21] to

[35] , wherein the substrate has a transmittance of 90% or more for the transfer laser.

[37] The transfer unit according to any one of

[21] to

[36] , wherein the light source oscillates an excimer laser having a wavelength of 248 nm.

[38] A transfer unit for transferring a structure to a transfer destination, the transfer unit comprising: a light source that oscillates a transfer laser, a substrate, a resin layer provided on the substrate, and a structure held on the surface of the resin layer opposite the substrate, wherein the holding thickness of the resin layer located between the substrate and the structure is 0.1 μm or less, a holding mechanism configured to hold the transfer destination, an alignment mechanism configured to align the light source and the holding mechanism opposite each other with the release plate therebetween, and a controller configured to control the oscillation of the transfer laser by the light source so that the transfer laser is incident on the surface of the substrate opposite the resin layer with an energy density such that at least a portion of the resin layer remains on the substrate.

[39] The transfer unit according to

[38] , wherein the transmittance of the transfer laser through the substrate is 90% or more.

[40] A transfer method for transferring a structure to a transfer destination, the transfer unit comprising: a light source that oscillates a transfer laser, a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, and a controller configured to control the oscillation of the transfer laser from the light source so that the transfer laser is incident on the substrate from the surface of the substrate opposite the resin layer so as to suppress direct ablation of the resin layer by the transfer laser, thereby heating the surface of the structure that contacts the resin layer and thermally decomposing at least a portion of the resin layer at the interface where the structure and the resin layer contact, and transferring the structure from the release plate to the transfer destination.

[41] A release plate used for transferring a structure to a transfer destination with a transfer laser, the release plate comprising: a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, the release plate having a thickness at which the transmittance of the transfer laser is 50% or more.

[42] A release plate used to transfer a structure to a destination using a transfer laser, the release plate comprising a substrate, a resin layer provided on the substrate, and a structure held on the surface of the resin layer opposite to the substrate, wherein the held thickness of the portion of the resin layer located between the substrate and the structure is 0.1 μm or less.

[43] A release plate precursor substrate used to manufacture a release plate for transferring a structure to a destination using a transfer laser, the release plate precursor substrate comprising a substrate and a resin layer provided on the substrate, the resin layer having a thickness of 0.4 μm or less.

[44] A method for manufacturing a display device that transfers a structure to a wiring board, the method comprising: preparing a wiring board; preparing a release plate that includes a substrate, a resin layer provided on the substrate, and a structure held on the surface of the resin layer opposite the substrate, wherein the holding thickness of the portion of the resin layer located between the substrate and the structure is a thickness that makes the transmittance of a transfer laser 50% or more; and irradiating the transfer laser onto the substrate from the surface of the substrate opposite the resin layer with an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the wiring board.

[45] A method for manufacturing a display device that transfers a structure to a wiring substrate, the method comprising: preparing a wiring substrate; preparing a release plate that includes a substrate, a resin layer provided on the substrate, and a structure held on the surface of the resin layer opposite the substrate, wherein the holding thickness of the portion of the resin layer located between the substrate and the structure is 0.1 μm or less; and irradiating a transfer laser onto the substrate from the surface of the substrate opposite the resin layer with an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the wiring substrate.

[46] A method for manufacturing a display device that transfers a structure to a wiring substrate, the method comprising: preparing a wiring substrate; preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate; irradiating a transfer laser onto the substrate from a surface of the substrate opposite the resin layer so as to suppress direct ablation of the resin layer by the transfer laser, thereby heating the surface of the structure that contacts the resin layer, and thermally decomposing at least a portion of the resin layer at the interface where the structure and the resin layer contact; and transferring the structure from the release plate to the wiring substrate.

[47] A method for manufacturing a mounting substrate that transfers a structure to a wiring board, the method comprising: preparing a wiring board; preparing a release plate that includes a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, wherein the holding thickness of a portion of the resin layer located between the substrate and the structure is a thickness that provides a transmittance of a transfer laser of 50% or more; and applying the transfer laser to the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the wiring board.

[48] ​​A method for manufacturing a mounting substrate in which a structure is transferred to a wiring board, the method comprising: preparing a wiring board; preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, wherein the holding thickness of the resin layer at a portion located between the substrate and the structure is 0.1 μm or less; and applying a transfer laser to the substrate from the surface of the substrate opposite the resin layer at an energy density such that at least a portion of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the wiring board.

[49] A method for manufacturing a mounting substrate in which a structure is transferred to a wiring board, the method comprising: preparing a wiring board; preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate; irradiating a transfer laser onto the substrate from the surface of the substrate opposite the resin layer so as to suppress direct ablation of the resin layer by the transfer laser, thereby heating the surface of the structure in contact with the resin layer and thermally decomposing at least a portion of the resin layer at the interface where the structure and the resin layer are in contact; and transferring the structure from the release plate to the wiring board.

[0256] The present invention also includes the following aspects: [A1] A transfer method for transferring a structure to a transfer destination, the transfer method comprising: preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite to the substrate, wherein a holding thickness of a portion of the resin layer located between the substrate and the structure is such that the transmittance of a transfer laser is 40% or more (preferably 50% or more, more preferably 60% or more, and particularly preferably 70% or more); [A2] A transfer method for transferring a structure to a transfer destination, the transfer method comprising: preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite the substrate, wherein the held thickness of a portion of the resin layer located between the substrate and the structure is 0.15 μm or less (preferably 0.1 μm or less, more preferably 0.09 μm or less, particularly preferably 0.07 μm or less, and extremely preferably 0.06 μm or less); and applying a transfer laser to the substrate from the surface of the substrate opposite the resin layer, thereby transferring the structure from the release plate to the transfer destination.

[0257] The present invention is not limited to the above-described embodiments. The above-described embodiments are merely examples, and anything that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits similar effects is included within the technical scope of the present invention.

Claims

1. A transfer method for transferring a structure to a transfer destination, comprising a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite to the substrate, wherein a holding thickness of a portion located between the substrate and the structure of the resin layer is a thickness at which a transmittance of a transfer laser is 50% or more, preparing a release plate; and irradiating the substrate with the transfer laser from a surface of the substrate opposite to the resin layer at an energy density such that at least a part of the resin layer remains on the substrate, and transferring the structure from the release plate to the transfer destination.

2. The transfer method according to claim 1, wherein the holding thickness of the resin layer is a thickness at which the transmittance of the transfer laser is 70% or more.

3. The transfer method according to claim 1, wherein the holding thickness of the resin layer is 0.1 μm or less.

4. The transfer method according to claim 2, wherein the holding thickness of the resin layer is 0.06 μm or less.

5. The transfer method according to any one of claims 1 to 4, wherein, in the resin layer, a region other than the region where the structure is disposed includes a portion thicker than the holding thickness.

6. The transfer method according to claim 5, wherein the thickness of the thicker portion is more than 0.1 μm and 0.4 μm or less.

7. The transfer method according to any one of claims 1 to 4, wherein at least a part of the resin layer is thermally decomposed at an interface where the structure is in contact with the resin layer, and the structure is transferred from the release plate to the transfer destination.

8. The thermal decomposition of the resin layer at the interface is caused by the transfer laser passing through the substrate and the resin layer, and the surface of the structure in contact with the resin layer generates heat at a temperature equal to or higher than the thermal decomposition temperature of the resin layer. The transfer method according to claim 7.

9. The transfer method according to any one of claims 1 to 4, wherein a thermal decomposition temperature of a constituent material of a surface of the structure in contact with the resin layer is higher than a thermal decomposition temperature of the resin layer.

10. The transfer method according to claim 9, wherein a thermal decomposition temperature of a constituent material of a surface of the structure in contact with the resin layer is 200 ° C or higher than a thermal decomposition temperature of the resin layer.

11. The transfer method according to any one of claims 1 to 4, wherein the resin layer contains polyimide or benzocyclobutene resin.

12. The transfer method according to any one of claims 1 to 4, wherein a surface of the structure in contact with the resin layer contains gallium nitride or gallium phosphide.

13. The transfer method according to claim 9, wherein the resin layer contains polyimide and the surface of the structure in contact with the resin layer contains gallium nitride.

14. The transfer method according to claim 9, wherein the resin layer contains polyimide and the surface of the structure in contact with the resin layer contains gallium phosphide.

15. The transfer method according to claim 9, wherein the resin layer contains a benzocyclobutene resin and the surface of the structure in contact with the resin layer contains gallium phosphide.

16. The transfer method according to any one of claims 1 to 4, wherein the transmittance of the transfer laser through the substrate is 90% or more.

17. The transfer method according to any one of claims 1 to 4, wherein the transfer laser is an excimer laser having a wavelength of 248 nm.

18. A transfer method for transferring a structure to a transfer destination, comprising: preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite to the substrate, wherein a holding thickness of a portion located between the substrate and the structure in the resin layer is 0.1 μm or less; and irradiating the substrate with a transfer laser from a surface of the substrate opposite to the resin layer at an energy density such that at least a part of the resin layer remains on the substrate, thereby transferring the structure from the release plate to the transfer destination.

19. The transfer method according to claim 18, wherein the transmittance of the transfer laser through the substrate is 90% or more.

20. A transfer method for transferring a structure to a transfer destination, comprising: preparing a release plate including a substrate, a resin layer provided on the substrate, and a structure held on a surface of the resin layer opposite to the substrate; and irradiating the substrate with a transfer laser from a surface of the substrate opposite to the resin layer so as to suppress direct ablation of the resin layer by the transfer laser, thereby heating a surface of the structure in contact with the resin layer, thermally decomposing at least a part of the resin layer at an interface where the structure and the resin layer are in contact with each other, and transferring the structure from the release plate to the transfer destination.

21. A transfer unit for transferring a structure to a transfer destination, comprising: a light source that oscillates a transfer laser; a substrate; a resin layer provided on the substrate; and a structure held on a surface of the resin layer opposite to the substrate, wherein a holding thickness of a portion located between the substrate and the structure of the resin layer is a thickness at which a transmittance of the transfer laser is 50% or more; a holding mechanism configured to hold the transfer destination; an alignment mechanism configured to oppose the light source and the holding mechanism with the release plate interposed therebetween; and a controller configured to control oscillation of the transfer laser by the light source such that the transfer laser is incident on the substrate from a surface of the substrate opposite to the resin layer with an energy density such that at least a part of the resin layer remains on the substrate.

22. The transfer unit according to claim 21, wherein the holding thickness of the resin layer is a thickness at which a transmittance of the transfer laser is 70% or more.

23. The transfer unit according to claim 21, wherein the holding thickness of the resin layer is 0.1 µm or less.

24. The transfer unit according to claim 22, wherein the holding thickness of the resin layer is 0.06 µm or less.

25. The transfer unit according to any one of claims 21 to 24, wherein, in the resin layer, a region other than the region where the structure is disposed includes a portion thicker than the holding thickness.

26. The transfer unit according to claim 25, wherein the thickness of the thick portion is more than 0.1 µm and 0.4 µm or less.

27. The transfer unit according to any one of claims 21 to 24, wherein at least a part of the resin layer is thermally decomposed at an interface where the structure is in contact with the resin layer, and the structure is transferred from the release plate to the transfer destination.

28. The transfer unit according to claim 23, wherein thermal decomposition of the resin layer at the interface is caused by heat generation of a surface of the structure in contact with the resin layer at a temperature equal to or higher than a thermal decomposition temperature of the resin layer by the transfer laser that has passed through the substrate and the resin layer.

29. The transfer unit according to any one of claims 21 to 24, wherein a thermal decomposition temperature of a constituent material of a surface of the structure in contact with the resin layer is higher than a thermal decomposition temperature of the resin layer.

30. The transfer unit according to claim 29, wherein the thermal decomposition temperature of the constituent material of the surface of the structure in contact with the resin layer is 200 °C or higher than the thermal decomposition temperature of the resin layer.

31. The transfer unit according to any one of claims 21 to 24, wherein the resin layer contains polyimide or benzocyclobutene resin.

32. The transfer unit according to any one of claims 21 to 24, wherein the surface of the structure in contact with the resin layer contains gallium nitride or gallium phosphide.

33. The transfer unit according to claim 29, wherein the resin layer contains polyimide and the surface of the structure in contact with the resin layer contains gallium nitride.

34. The transfer unit according to claim 29, wherein the resin layer contains benzocyclobutene resin and the surface of the structure in contact with the resin layer contains gallium phosphide.

35. The transfer unit according to claim 29, wherein the resin layer contains polyimide and the surface of the structure in contact with the resin layer contains gallium phosphide.

36. The transfer unit according to any one of claims 21 to 24, wherein the transmittance of the transfer laser through the substrate is 90% or more.

37. The transfer unit according to any one of claims 21 to 24, wherein the light source oscillates an excimer laser having a wavelength of 248 nm.

38. A transfer unit for transferring a structure to a transfer destination, comprising: a light source that oscillates a transfer laser; a substrate; a resin layer provided on the substrate; a structure held on a surface of the resin layer opposite to the substrate; a release plate having a holding thickness of 0.1 μm or less at a portion located between the substrate and the structure; a holding mechanism configured to hold the transfer destination; an alignment mechanism configured to oppose the light source and the holding mechanism with the release plate interposed therebetween; and a controller configured to control the oscillation of the transfer laser by the light source so that the transfer laser is incident on the substrate from a surface of the substrate opposite to the resin layer with an energy density such that at least a part of the resin layer remains on the substrate.

39. The transfer unit according to claim 38, wherein the transmittance of the transfer laser through the substrate is 90% or more.

40. A transfer unit that transfers a structure to a transfer destination, the transfer unit including: a light source that oscillates a transfer laser; a release plate including a base material, a resin layer provided on the base material, and a structure held on a surface of the resin layer opposite to the base material; and a controller configured to control oscillation of the transfer laser by the light source such that the transfer laser is incident on the base material from a surface of the base material opposite to the resin layer so as to suppress direct ablation of the resin layer by the transfer laser, heat the surface of the structure in contact with the resin layer, thermally decompose at least a part of the resin layer at an interface where the structure and the resin layer are in contact, and transfer the structure from the release plate to the transfer destination.

41. A release plate used for transferring a structure to a transfer destination by a transfer laser, the release plate including: a base material; a resin layer provided on the base material; and a structure held on a surface of the resin layer opposite to the base material, wherein a holding thickness of a portion located between the base material and the structure of the resin layer is a thickness at which a transmittance of the transfer laser is 50% or more.

42. A release plate used for transferring a structure to a transfer destination by a transfer laser, the release plate including: a base material; a resin layer provided on the base material; and a structure held on a surface of the resin layer opposite to the base material, wherein a holding thickness of a portion located between the base material and the structure of the resin layer is 0.1 μm or less.

43. A release plate precursor substrate used for manufacturing a release plate for transferring a structure to a transfer destination by a transfer laser, the release plate precursor substrate including: a base material; and a resin layer provided on the base material, wherein a thickness of the resin layer is 0.4 μm or less.

44. A method for manufacturing a display device that transfers a structure onto a wiring substrate, the method including: preparing a wiring substrate; preparing a release plate including a base material, a resin layer provided on the base material, and a structure held on a surface of the resin layer opposite to the base material, wherein a holding thickness of a portion located between the base material and the structure of the resin layer is a thickness at which the transmittance of a transfer laser is 50% or more; and irradiating the transfer laser from a surface of the base material opposite to the resin layer onto the base material with an energy density such that at least a part of the resin layer remains on the base material, to transfer the structure from the release plate onto the wiring substrate.

45. A method for manufacturing a display device that transfers a structure onto a wiring substrate, the method including: preparing a wiring substrate; preparing a release plate including a base material, a resin layer provided on the base material, and a structure held on a surface of the resin layer opposite to the base material, wherein a holding thickness of a portion located between the base material and the structure of the resin layer is 0.1 μm or less; and irradiating the transfer laser from a surface of the base material opposite to the resin layer onto the base material with an energy density such that at least a part of the resin layer remains on the base material, to transfer the structure from the release plate onto the wiring substrate.

46. A method for manufacturing a display device that transfers a structure onto a wiring substrate, the method including: preparing a wiring substrate; preparing a release plate including a base material, a resin layer provided on the base material, and a structure held on a surface of the resin layer opposite to the base material; and irradiating the transfer laser from a surface of the base material opposite to the resin layer onto the base material so as to suppress direct ablation of the resin layer by the transfer laser, causing the surface of the structure in contact with the resin layer to generate heat, thermally decomposing at least a part of the resin layer at an interface where the structure and the resin layer are in contact, and transferring the structure from the release plate onto the wiring substrate.

47. A method for manufacturing a mounting substrate for transferring a structure onto a wiring substrate, the method comprising: preparing a wiring substrate; preparing a release plate including a base material, a resin layer provided on the base material, and a structure held on a surface of the resin layer opposite to the base material, wherein a holding thickness of a portion located between the base material and the structure of the resin layer is a thickness at which a transmittance of a transfer laser is 50% or more; and irradiating the transfer laser from a surface of the base material opposite to the resin layer onto the base material with an energy density such that at least a part of the resin layer remains on the base material, and transferring the structure from the release plate onto the wiring substrate.

48. A method for manufacturing a mounting substrate for transferring a structure onto a wiring substrate, the method comprising: preparing a wiring substrate; preparing a release plate including a base material, a resin layer provided on the base material, and a structure held on a surface of the resin layer opposite to the base material, wherein a holding thickness of a portion located between the base material and the structure of the resin layer is 0.1 μm or less; and irradiating the transfer laser from a surface of the base material opposite to the resin layer onto the base material with an energy density such that at least a part of the resin layer remains on the base material, and transferring the structure from the release plate onto the wiring substrate.

49. A method for manufacturing a mounting substrate for transferring a structure onto a wiring substrate, the method comprising: preparing a wiring substrate; preparing a release plate including a base material, a resin layer provided on the base material, and a structure held on a surface of the resin layer opposite to the base material; and irradiating the transfer laser from a surface of the base material opposite to the resin layer onto the base material so as to suppress direct ablation of the resin layer by the transfer laser, heating a surface of the structure in contact with the resin layer, thermally decomposing at least a part of the resin layer at an interface where the structure and the resin layer are in contact, and transferring the structure from the release plate onto the wiring substrate.

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