Surface light emitting element, surface light emitting element array, electronic device, and method for manufacturing surface light emitting element

Abstract

Provided is a surface light emitting element capable of reducing a radiation angle in various modes.　This surface light emitting element according to the present technology comprises a light emitting element unit in which at least one light emitting layer and a plurality of oxidization constriction layers are laminated. The plurality of oxidization constriction layers include a first oxidization constriction layer and a second oxidization constriction layer that is closer to an emission surface than the first oxidization constriction layer and has a smaller oxidization constriction diameter than the first oxidization constriction layer. The surface light emitting element according to the present technology makes it possible to provide a surface light emitting element capable of reducing a radiation angle in various modes.

Description

Surface light emitting device, surface light emitting device array, electronic device, and method of manufacturing surface light emitting device

[0001] The technology according to the present disclosure (hereinafter also referred to as "the technology") relates to a surface light emitting device, a surface light emitting device array, an electronic device, and a method for manufacturing the surface light emitting device.

[0002] 2. Description of the Related Art Conventionally, there has been known a surface-emitting device capable of obtaining a surface-emitting output, such as a surface-emitting laser, in which a light-emitting layer and a plurality of oxide constriction layers are stacked (see, for example, Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2004-253408

[0004] However, conventional surface light emitting devices have room for improvement in terms of reducing the radiation angle in more diverse modes.

[0005] Therefore, a main object of the present technology is to provide a surface light emitting device that can reduce the radiation angle in more diverse modes.

[0006] The present technology provides a surface-emitting device including a light-emitting element portion including at least one light-emitting layer and multiple oxide constriction layers stacked together, wherein the multiple oxide constriction layers include: a first oxide constriction layer; and a second oxide constriction layer that is closer to the emission surface than the first oxide constriction layer and has a smaller oxide constriction diameter than the first oxide constriction layer. The light-emitting layer may be disposed between the first and second oxide constriction layers. There may be multiple pairs of the first and second oxide constriction layers. The at least one light-emitting layer may be multiple light-emitting layers, and the multiple pairs may be stacked on top of each other and individually correspond to the multiple light-emitting layers, with the corresponding light-emitting layer disposed between the first and second oxide constriction layers of each pair. A tunnel junction layer may be provided between two adjacent light-emitting layers. In the multiple pairs, the first oxide constriction layer may have the same oxide constriction diameter, and the second oxide constriction layer may have the same oxide constriction diameter. The plurality of sets may have a smaller oxidation constriction diameter of the second oxide constriction layer as the set is closer to the emission surface. The plurality of sets may have a smaller oxidation constriction diameter of the first oxide constriction layer as the set is closer to the emission surface. The plurality of sets may have the same oxidation constriction diameter of the first oxide constriction layer. The plurality of sets may have a smaller oxidation constriction diameter of the first oxide constriction layer as the set is closer to the emission surface. The plurality of sets may have the same oxidation constriction diameter of the second oxide constriction layer. Two adjacent sets among the plurality of sets may have the same oxidation constriction diameter of the first oxide constriction layer of the set closer to the emission surface and the same oxidation constriction diameter of the second oxide constriction layer of the set farther from the emission surface. The second oxide constriction layer may be thicker than the first oxide constriction layer. Each of the first and second oxidized constriction layers may have a non-oxidized region and an oxidized region surrounding the non-oxidized region, the non-oxidized region of the first and second oxidized constriction layers may both contain Al, and the non-oxidized region of the second oxidized constriction layer may have a higher Al composition than the non-oxidized region of the first oxidized constriction layer. A reflector may be provided on one and / or the other side of the light-emitting layer in a direction perpendicular to the surface. The light-emitting element component may have a recessed portion exposing at least side surfaces of the plurality of oxidized constriction layers.The present technology also provides a surface light emitting element array in which a plurality of surface light emitting elements are arranged in an array, the surface light emitting element including a light emitting element portion in which at least one light emitting layer and a plurality of oxide constriction layers are stacked, the plurality of oxide constriction layers including: a first oxide constriction layer; and a second oxide constriction layer that is closer to the emission surface than the first oxide constriction layer and has a smaller oxide constriction diameter than the first oxide constriction layer.The present technology also provides an electronic device including a surface light emitting element including: a light emitting element portion in which at least one light emitting layer and a plurality of oxide constriction layers are stacked, the plurality of oxide constriction layers including: a first oxide constriction layer; and a second oxide constriction layer that is closer to the emission surface than the first oxide constriction layer and has a smaller oxide constriction diameter than the first oxide constriction layer. The present technology also provides a method for manufacturing a surface light emitting device, the method including: laminating at least a light emitting layer and first and second oxidizable layers on a substrate to produce a laminate; etching the laminate until at least side surfaces of the first and second oxidizable layers are exposed; and oxidizing each of the first and second oxidizable layers from the side surfaces, wherein the second oxidizable layer is closer to an emission surface than the first oxidizable layer, and in the oxidizing step, an oxidation rate of the second oxidizable layer is higher than that of the first oxidizable layer. The emission surface may be a surface of the laminate opposite to the substrate side or a surface of the laminate facing the substrate side.

[0007] FIG. 3A is a cross-sectional view of a surface light emitting device according to Example 1 of an embodiment of the present technology; FIG. 3B is a plan view of a surface light emitting device according to Example 1 of an embodiment of the present technology; FIG. 3A is a diagram showing a zeroth-order transverse mode distribution in the case of a symmetric OA diameter; FIG. 3B is a diagram showing a zeroth-order transverse mode distribution in the case of an asymmetric OA diameter; FIG. 4A is a diagram showing a first-order transverse mode distribution in the case of a symmetric OA diameter; FIG. 4B is a diagram showing a first-order transverse mode distribution in the case of an asymmetric OA diameter; FIG. 5A is a graph showing FFP radiation angle characteristics of the zeroth-order mode in the case of a symmetric OA diameter and an asymmetric OA diameter; FIG. 5B is a graph showing FFP radiation angle characteristics of the first-order mode in the case of a symmetric OA diameter and an asymmetric OA diameter; FIG. 5C is a graph showing FFP radiation angle characteristics of the second-order mode in the case of a symmetric OA diameter and an asymmetric OA diameter. 1 is a graph showing an oscillation threshold gain for each mode in the case of a symmetrical OA diameter and in the case of an asymmetrical OA diameter (large OA diameter on the emission side and small OA diameter on the emission side), and a diagram schematically showing two surface light emitting devices having asymmetrical OA diameters. FIG. 2 is a flowchart for describing an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 3 is a cross-sectional view for each process of an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 4 is a cross-sectional view for each process of an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 5 is a cross-sectional view for each process of an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 6 is a cross-sectional view for each process of an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. 16A is a diagram showing FFP radiation angle characteristics of a first-order mode in the case of an asymmetric OA diameter (alternating) and in the case of an asymmetric OA diameter (stepwise). FIG. 16B is a diagram showing FFP radiation angle characteristics of a second-order mode in the case of an asymmetric OA diameter (alternating) and in the case of an asymmetric OA diameter (stepwise). FIG. 16B is a diagram showing FFP radiation angle characteristics of a second-order mode in the case of an asymmetric OA diameter (alternating) and in the case of an asymmetric OA diameter (stepwise).FIG. 1 is a cross-sectional view of a surface light emitting device according to Example 4 of an embodiment of the present technology. FIG. 2 is a cross-sectional view of a surface light emitting device according to Example 5 of an embodiment of the present technology. FIG. 3 is a cross-sectional view of a surface light emitting device according to Example 6 of an embodiment of the present technology. FIG. 4 is a cross-sectional view of a surface light emitting device according to Example 7 of an embodiment of the present technology. FIG. 5 is a cross-sectional view of a surface light emitting device according to Example 8 of an embodiment of the present technology. FIG. 6 is a cross-sectional view of a surface light emitting device according to Example 9 of an embodiment of the present technology. FIG. 7 is a cross-sectional view of a surface light emitting device according to Example 10 of an embodiment of the present technology. FIG. 8 is a cross-sectional view of a surface light emitting device according to Example 11 of an embodiment of the present technology. FIG. 9 is a cross-sectional view of a surface light emitting device according to Example 10 of an embodiment of the present technology. FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 12 of an embodiment of the present technology. FIG. 12 is a cross-sectional view of a surface light emitting device according to Example 13 of an embodiment of the present technology. FIG. 13 is a cross-sectional view of a surface light emitting device according to Example 14 of an embodiment of the present technology. FIG. 14 is a cross-sectional view of a surface light emitting device according to Example 15 of an embodiment of the present technology. FIG. 15 is a cross-sectional view of a surface light emitting device according to Example 16 of an embodiment of the present technology. FIG. 16 is a plan view of a surface light emitting device according to Example 16 of an embodiment of the present technology. FIG. 17 is a cross-sectional view of a surface light emitting device according to Example 17 of an embodiment of the present technology. FIG. 17 is a partially cutaway perspective view of a surface light Fig. 1 is a cross-sectional view of a surface light emitting device according to a first modified example of a tenth example of an embodiment of the present technology. Fig. 2 is a cross-sectional view of a surface light emitting device according to a second modified example of a tenth example of an embodiment of the present technology. Fig. 3 is a cross-sectional view of a surface light emitting device according to a second modified example of a thirteenth example of an embodiment of the present technology. Fig. 4 is a diagram showing an example of application of a surface light emitting device according to a first example of an embodiment of the present technology to a distance measurement device. Fig. 5 is a block diagram showing an example of a schematic configuration of a vehicle control system. Fig. 6 is an explanatory diagram showing an example of an installation position of a distance measurement device.

[0008] Preferred embodiments of the present technology will be described in detail below with reference to the accompanying drawings. Note that in this specification and the drawings, components having substantially the same functional configurations are denoted by the same reference numerals, and redundant description will be omitted. The embodiments described below illustrate typical embodiments of the present technology, and the scope of the present technology should not be interpreted narrowly. Even when the present specification describes that the surface light emitting device, surface light emitting device array, electronic device, and method for manufacturing a surface light emitting device according to the present technology achieve multiple effects, it is sufficient that the surface light emitting device, surface light emitting device array, and method for manufacturing a surface light emitting device according to the present technology achieve at least one effect. The effects described in this specification are merely examples and are not limiting, and other effects may also be achieved.

[0009] The description will be made in the following order: 0. Introduction 1. Surface-light-emitting device according to Example 1 of one embodiment of the present technology 2. Surface-light-emitting device according to Example 2 of one embodiment of the present technology 3. Surface-light-emitting device according to Example 3 of one embodiment of the present technology 4. Surface-light-emitting device according to Example 4 of one embodiment of the present technology 5. Surface-light-emitting device according to Example 5 of one embodiment of the present technology 6. Surface-light-emitting device according to Example 6 of one embodiment of the present technology 7. Surface-light-emitting device according to Example 7 of one embodiment of the present technology 8. Surface-light-emitting device according to Example 8 of one embodiment of the present technology 9. Surface-light-emitting device according to Example 9 of one embodiment of the present technology 10. Surface-light-emitting device according to Example 10 of one embodiment of the present technology 11. Surface-light-emitting device according to Example 11 of one embodiment of the present technology 12. Surface-light-emitting device according to Example 12 of one embodiment of the present technology 13. Surface-light-emitting device according to Example 13 of one embodiment of the present technology 14. Surface-light-emitting device according to Example 14 of one embodiment of the present technology 15. Surface-light-emitting device according to Example 15 of one embodiment of the present technology 16. Surface-light-emitting device according to Example 16 of one embodiment of the present technology 17. 18. Surface light emitting device according to Example 17 of an embodiment of the present technology 19. Surface light emitting device array including a plurality of surface light emitting devices according to Example 1 of an embodiment of the present technology 20. Modification of the present technology 21. Example of application to electronic devices 22. Example of application of surface light emitting device to distance measurement device 23. Example of application of distance measurement device to a moving body

[0010] <0. Introduction>

[0011] A conventional method for controlling the radiation angle of emitted light from a surface-emitting element (e.g., a surface-emitting laser) is disclosed in, for example, Patent Document 1 (JP 2004-253408 A). In this method, in a surface-emitting element in which oxide constriction layers having an optical aperture (OA) are provided above and below a light-emitting layer, one oxide constriction layer is used for current confinement, and the other oxide constriction layer is used for suppressing higher-order modes.

[0012] However, Patent Document 1 does not mention anything about controlling the radiation angle of a far field pattern (FFP) (hereinafter, also simply referred to as "radiation angle"). Furthermore, Patent Document 1 does not mention anything about achieving radiation angle control in more diverse modes by controlling light confinement three-dimensionally using multiple oxide confinement layers.

[0013] Therefore, the inventors have succeeded in reducing the radiation angle in a variety of modes by appropriately controlling the optical confinement in three dimensions through ingenuity in the profiles (shapes, materials, and arrangements) of the multiple oxide confinement layers of the surface light emitting device, which is a new discovery by the inventors.

[0014] The inventors have developed a surface light emitting device according to the present technology as a surface light emitting device that embodies this new finding. The surface light emitting device according to the present technology can reduce the radiation angle in a wider variety of modes.

[0015] Hereinafter, several examples of an embodiment of a surface light emitting device according to the present technology will be described in detail with reference to the drawings. In the following, in cross-sectional views such as Fig. 1, the upper side will be referred to as "upper" and the lower side will be referred to as "lower". The term "same" used in this specification includes not only completely same but also substantially same (when there is a slight difference within the range of the same effect).

[0016] 1. Surface light emitting device according to Example 1 of an embodiment of the present technology> Fig. 1 is a cross-sectional view of a surface light emitting device 10 according to Example 1 of an embodiment of the present technology. Fig. 2 is a plan view (top view) of the surface light emitting device 10 according to Example 1 of an embodiment of the present technology. Fig. 1 is a cross-sectional view taken along line 1-1 in Fig. 2.

[0017] <Configuration of Surface Light Emitting Device> (Overall Configuration) A surface light emitting device 10 according to Example 1 of an embodiment of the present technology is, for example, a vertical cavity surface emitting laser (VCSEL) as shown in Figures 1 and 2. The surface light emitting device 10 is, for example, a surface emission type VCSEL. The surface light emitting device 10 has, for example, a multi-junction structure.

[0018] The surface light emitting element 10 is driven by, for example, a driver (drive circuit), which includes, for example, a power supply and a transistor that controls the on / off of the power supply to the surface light emitting element 10.

[0019] As an example, the surface light emitting element 10 includes a light emitting element unit LE in which a plurality of (e.g., two) light emitting layers (e.g., first and second light emitting layers 105, 111) and a plurality of (e.g., four) oxide constriction layers (e.g., oxide constriction layers 104, 106, 110, 112) are stacked. The first light emitting layer 105 is disposed on one side (below) of the second light emitting layer 111 in the direction perpendicular to the surface (vertical direction). Each light emitting layer is also called an "active layer."

[0020] Here, one of the multiple oxide constriction layers stacked on top of each other is defined as a "first oxide constriction layer," and another oxide constriction layer that is closer to the output surface ES than the first oxide constriction layer and has a smaller oxide constriction diameter than the first oxide constriction layer is defined as a "second oxide constriction layer."

[0021] The surface light emitting device 10 has a plurality of pairs (for example, two pairs) of first and second oxide confinement layers. The plurality of pairs (for example, two pairs) are stacked on top of each other and correspond to a plurality of light emitting layers (for example, two light emitting layers).

[0022] More specifically, the plurality of (e.g., four) oxidized constriction layers (e.g., oxidized constriction layers 104, 106, 110, 112) includes a plurality of sets (e.g., first and second sets) of first and second oxidized constriction layers corresponding to a plurality of (e.g., two) light-emitting layers (e.g., first and second light-emitting layers 105, 111), with the corresponding light-emitting layer disposed between the first and second oxidized constriction layers of each set. Here, the first oxidized constriction layer of the first set is oxidized constriction layer 104, the second oxidized constriction layer of the first set is oxidized constriction layer 106, the first oxidized constriction layer of the second set is oxidized constriction layer 110, and the second oxidized constriction layer of the second set is oxidized constriction layer 112. The second set is located closer to the emission surface ES than the first set. Hereinafter, in this embodiment, the oxidized constricting layer 104 will also be referred to as the "first oxidized constricting layer 104," the oxidized constricting layer 106 as the "second oxidized constricting layer 106," the oxidized constricting layer 110 as the "first oxidized constricting layer 110," and the oxidized constricting layer 112 as the "second oxidized constricting layer 112."

[0023] In this embodiment, the first light-emitting layer 105 is disposed between the first and second oxide constriction layers 104 and 106 of the first set, and the second light-emitting layer 111 is disposed between the first and second oxide constriction layers 110 and 112 of the second set. Here, the second oxide constriction layer 106 is located closer to (above) the emission surface ES than the first oxide constriction layer 104. The second oxide constriction layer 112 is located closer to (above) the emission surface ES than the first oxide constriction layer 110.

[0024] A tunnel junction layer 108 is provided between two adjacent light-emitting layers (e.g., first and second light-emitting layers 105 and 111). More specifically, the tunnel junction layer 108 is provided between the first set of second oxide constriction layers 106 and the second set of first oxide constriction layers 110.

[0025] A first semiconductor multilayer film reflector 102 is provided on one side (lower side) of the first oxide constricting layer 104 in the direction perpendicular to the surface (up-down direction). A substrate 101 is provided on the opposite side (lower side) of the first semiconductor multilayer film reflector 102 to the first oxide constricting layer 104 side. A first cladding layer 103 is provided between the first oxide constricting layer 104 and the first semiconductor multilayer film reflector 102. A second cladding layer 107 is provided between the second oxide constricting layer 106 and the tunnel junction layer 108. The first and second cladding layers 103 and 107 have different conductivity types.

[0026] A third cladding layer 109 is provided between the tunnel junction layer 108 and the first oxide constriction layer 110. A second semiconductor multilayer film reflector 114 is provided on the other side (upper side) of the second oxide constriction layer 112 in the perpendicular-to-plane direction (up-down direction). A fourth cladding layer 113 is provided between the second oxide constriction layer 112 and the second semiconductor multilayer film reflector 114. The third and fourth cladding layers 109 and 113 have mutually different conductivity types.

[0027] As described above, in the surface-emitting device 10, as an example, the first semiconductor multilayer film reflector 102, the first cladding layer 103, the first oxide constriction layer 104, the first light-emitting layer 105, the second oxide constriction layer 106, the second cladding layer 107, the tunnel junction layer 108, the third cladding layer 109, the first oxide constriction layer 110, the second light-emitting layer 111, the second oxide constriction layer 112, the fourth cladding layer 113, and the second semiconductor multilayer film reflector 114 are stacked in this order from bottom to top on the substrate 101.

[0028] In the surface-emitting device 10, the first light-emitting layer 105 has a double heterostructure sandwiched between first and second clad layers 103 and 107 of different conductivity types in a direction perpendicular to the surface, and holes and electrons can undergo radiative recombination (radiative recombination) in the first light-emitting layer 105. In the surface-emitting device 10, the second light-emitting layer 111 has a double heterostructure sandwiched between third and fourth clad layers 109 and 113 of different conductivity types in a direction perpendicular to the surface, and holes and electrons can undergo radiative recombination (radiative recombination) in the second light-emitting layer 111.

[0029] In the surface-emitting element 10, a resonator is configured including first and second light-emitting layers 105, 111 and first and second semiconductor multilayer film reflectors 102, 114 that sandwich the first and second light-emitting layers 105, 111 in the direction perpendicular to the surface. The surface-emitting element 10 emits laser light from an emission surface ES, which is the surface of the light-emitting element portion LE on the second semiconductor multilayer film reflector 114 side.

[0030] The first and second semiconductor multilayer film reflectors 102, 114 have high reflectivities (e.g., 99% or higher), enabling vertical optical confinement within the resonator. Furthermore, each pair of first and second oxide confinement layers has a horizontal refractive index distribution within the resonator, enabling lateral optical confinement to the central high-refractive-index portion (non-oxidized region). In other words, the surface-emitting device 10 achieves high three-dimensional optical confinement near each light-emitting layer through vertical and horizontal optical confinement within the resonator.

[0031] As an example, a recess DP that defines at least the mesa structure MS is provided on the upper surface of the light-emitting element portion LE. The recess DP exposes at least the side surfaces of multiple (e.g., four) oxidized constriction layers. Here, the recess DP includes a notch DP1 and a groove DP2. The notch DP1 defines a portion (e.g., a majority portion) of the mesa structure MS in the circumferential direction, and the groove DP2 defines the remaining portion of the mesa structure MS in the circumferential direction and the lower portion of the first semiconductor multilayer film reflector 102 corresponding to the remaining portion. A buried layer 119 (insulating layer) is provided in the recess DP. The mesa structure MS includes at least a portion (e.g., an upper portion) of the first semiconductor multilayer reflector 102, the first cladding layer 103, the first oxide constriction layer 104, the first light-emitting layer 105, the second oxide constriction layer 106, the second cladding layer 107, the tunnel junction layer 108, the third cladding layer 109, the first oxide constriction layer 110, the second light-emitting layer 111, the second oxide constriction layer 112, the fourth cladding layer 113, and the second semiconductor multilayer reflector 114. The mesa structure MS is also referred to as a "light-emitting mesa." Here, the mesa structure MS has a circular shape in a planar view (see FIG. 2 ), but may have other shapes such as an ellipse or a polygon. The diameter of the mesa structure MS is, for example, several tens of μm (e.g., 20 μm to 30 μm).

[0032] As an example, an anode electrode 115 (p-side electrode) is provided in a circumferential (e.g., ring-shaped) shape on the top of the mesa structure MS (specifically, on the second semiconductor multilayer film reflector 114) so ​​as to surround at least the central portion of each oxidized constriction layer in plan view. The inner diameter side of the anode electrode 115 serves as the emission port.

[0033] As an example, an electrode pad 117 spaced apart from the anode electrode 115 and an anode wiring 118 connecting the electrode pad 117 and the anode electrode 115 are provided on the buried layer 113 provided in the cutout DP1.

[0034] As an example, a cathode electrode 116 (n-side electrode) is provided so as to extend vertically in an electrode installation area EIA on the opposite side of the light emitting element portion LE of the buried layer 119 provided in the trench DP2. As an example, one end of the cathode electrode 116 is located on the substrate 101, and the other end is located at the same height as the upper surface of the anode electrode 115.

[0035] As an example, the surface light emitting element 10 is mounted on a mounting substrate (for example, a drive substrate having a driver, a wiring substrate connected to the driver, etc.) with the junction facing up.

[0036] (Substrate) The substrate 101 is, for example, a substrate made of a compound semiconductor, such as an n-GaAs substrate.

[0037] (First Semiconductor Multilayer Reflector) The first semiconductor multilayer reflector 102 (semiconductor DBR), for example, is a semiconductor multilayer reflector doped with n-type impurities, and has low light absorption, high reflectivity, and electrical conductivity. Multilayer reflectors are also called distributed Bragg reflectors (DBRs). The first semiconductor multilayer reflector 102 has a structure in which high-refractive index layers and low-refractive index layers with different refractive indices are alternately stacked with an optical thickness equal to one-quarter of the emission wavelength of each light-emitting layer. The low-refractive index layers are made of a compound semiconductor containing Al (e.g., AlGaAs, AlAs, etc.). The high-refractive index layers are made of a compound semiconductor (e.g., AlGaAs, GaAs, etc.). The low-refractive index layers are high-Al composition layers with a higher Al composition than the high-refractive index layers. It is preferable that the refractive index difference (Al composition difference) between the high-refractive index layers and the low-refractive index layers be as large as possible. This is because high reflectivity can be obtained with a small number of pairs. The Al composition of the low refractive index layer is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more. The Al composition of the high refractive index layer is preferably 0.2 or less, more preferably 0.15 or less, even more preferably 0.1 or less, and even more preferably 0.05 or less. Examples of n-type impurities (n-type dopants) in the first semiconductor multilayer film reflector 102 include Si, Se, and Ge. Here, the first semiconductor multilayer film reflector 102 is set to have a slightly higher reflectivity than the second semiconductor multilayer film reflector 114.

[0038] (First Cladding Layer) The first cladding layer 103 is made of, for example, a compound semiconductor, such as n-AlGaAs. The "cladding layer" is also called a "spacer layer." The Al composition of the first cladding layer 103 is, for example, 0.3 to 0.5 (for example, 0.4).

[0039] (First set of first oxide constriction layers) As an example, the first set of first oxide constriction layers 104 are disposed between the first cladding layer 103 and the first light-emitting layer 105. The first oxide constriction layer 104 may be provided, for example, in the first cladding layer 103 or in the first semiconductor multilayer film reflector 102.

[0040] For example, the first oxidized constricting layer 104 has a non-oxidized region 104a and an oxidized region 104b surrounding the non-oxidized region 104a. The outer shape (shape in plan view) of the non-oxidized region 104a is determined by the inner peripheral shape of the oxidized region 104b. The diameter (average diameter) of the non-oxidized region 104a is determined by the inner diameter (average inner diameter) of the oxidized region 104b. The first oxidized constricting layer 104 is preferably disposed at or near a node of a standing wave generated in the resonator. In the oxidized constricting layer, the non-oxidized region is also referred to as an OA (optical aperture) (hereinafter the same). In the oxidized constricting layer, the diameter of the non-oxidized region is also referred to as an OA diameter (optical aperture diameter) (hereinafter the same).

[0041] The non-oxidized region 104a functions as a current / light passing region. For example, the non-oxidized region 104a includes an Al-containing compound semiconductor (e.g., AlGaAs, AlAs, etc.). The non-oxidized region 104a preferably has an Al composition of 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more.

[0042] The oxidized region 104b is, for example, a circular (for example, ring-shaped) region in plan view that surrounds the non-oxidized region 104a. The oxidized region 104b has a higher resistance and a lower refractive index than the non-oxidized region 104a, and functions as a current / light confinement region. For example, the oxidized region 104b is made of an oxide containing Al (for example, Al x O y etc.)

[0043] (First Light-Emitting Layer) The first light-emitting layer 105 is made of, for example, a compound semiconductor having a smaller band gap energy than the first and second cladding layers 103 and 107. The first light-emitting layer 105 is made of, for example, a GaAs-based compound semiconductor (e.g., GaAs, AlGaAs, GaInAs, GaInAsN, etc.). The first light-emitting layer 105 may have any of a quantum well structure, a multiple quantum well structure, a quantum wire structure, and a quantum dot structure. The emission wavelength of the first light-emitting layer 105 is set to, for example, approximately 600 to 1100 nm. The first light-emitting layer 105 is preferably disposed at or near the antinode of a standing wave generated in the resonator.

[0044] (First set of second oxide constriction layers) For example, the first set of second oxide constriction layers 106 are disposed between the first light-emitting layer 105 and the second cladding layer 107. Note that the second oxide constriction layer 106 may be provided within the second cladding layer 107, for example.

[0045] For example, the second oxidized constriction layer 106 has a non-oxidized region 106a and an oxidized region 106b surrounding the non-oxidized region 106a. The outer shape (shape in plan view) of the non-oxidized region 106a is determined by the inner circumferential shape of the oxidized region 106b. The diameter (average diameter) of the non-oxidized region 106a is determined by the inner diameter (average inner diameter) of the oxidized region 106b. The second oxidized constriction layer 106 is preferably disposed at or near a node of a standing wave generated in the resonator.

[0046] The non-oxidized region 106a functions as a current / light passing region. For example, the non-oxidized region 106a includes an Al-containing compound semiconductor (e.g., AlGaAs, AlAs, etc.). The non-oxidized region 106a preferably has an Al composition of 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more.

[0047] The oxidized region 106b is, for example, a circular (for example, ring-shaped) region in plan view that surrounds the non-oxidized region 106a. The oxidized region 106b has a higher resistance and a lower refractive index than the non-oxidized region 106a, and functions as a current / light confinement region. For example, the oxidized region 106b is made of an oxide containing Al (for example, Alx O y etc.)

[0048] (Second Cladding Layer) The second cladding layer 107 is made of, for example, a compound semiconductor, such as p-AlGaAs. The "cladding layer" is also called a "spacer layer." The Al composition of the second cladding layer 107 is, for example, 0.3 to 0.5 (for example, 0.4).

[0049] (tunnel junction layer)

[0050] The tunnel junction layer 108 includes a p-type semiconductor region 108a and an n-type semiconductor region 108b stacked on top of each other. Here, the p-type semiconductor region 108a is disposed on the substrate 101 side (below) of the n-type semiconductor region 108b. The p-type semiconductor region 108a is, for example, a highly doped p-type layer (e.g., a p-GaAs layer, a p-InGaAs layer, etc.) doped with a high concentration of p-type impurities. The n-type semiconductor region 108b is, for example, a highly doped n-type layer (e.g., an n-GaAs layer, an n-InGaAs layer, etc.) doped with a high concentration of n-type impurities. The action of the tunnel junction layer 108 allows currents of approximately the same magnitude to flow through the first and second light-emitting layers 105, 111.

[0051] (Third Cladding Layer) The third cladding layer 109 is made of, for example, a compound semiconductor, such as n-AlGaAs. The "cladding layer" is also called a "spacer layer." The Al composition of the third cladding layer 109 is, for example, 0.3 to 0.5 (for example, 0.4).

[0052] (Second Set of First Oxidized Constriction Layers) The second set of first oxidized constriction layers 110 are, for example, disposed between the third cladding layer 109 and the second light-emitting layer 111. Note that the first oxidized constriction layer 110 may be provided within the third cladding layer 109, for example.

[0053] For example, the first oxidized constriction layer 110 has a non-oxidized region 110a and an oxidized region 110b surrounding the non-oxidized region 110a. The outer shape (shape in plan view) of the non-oxidized region 110a is determined by the inner circumferential shape of the oxidized region 110b. The diameter (average diameter) of the non-oxidized region 110a is determined by the inner diameter (average inner diameter) of the oxidized region 110b. The first oxidized constriction layer 110 is preferably disposed at or near a node of a standing wave generated in the resonator.

[0054] The non-oxidized region 110a functions as a current / light passing region. The non-oxidized region 110a includes, for example, a compound semiconductor containing Al (e.g., AlGaAs, AlAs, etc.). The non-oxidized region 110a preferably has an Al composition of 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more.

[0055] The oxidized region 110b is, for example, a circular (for example, ring-shaped) region in plan view that surrounds the non-oxidized region 110a. The oxidized region 110b has a higher resistance and a lower refractive index than the non-oxidized region 110a, and functions as a current / light confinement region. For example, the oxidized region 110b is made of an oxide containing Al (for example, Al x O y etc.)

[0056] (Second Light-Emitting Layer) The second light-emitting layer 111 is, for example, made of a compound semiconductor having a smaller band gap energy than the third and fourth cladding layers 109 and 113. The second light-emitting layer 111 is, for example, made of a GaAs-based compound semiconductor (e.g., GaAs, AlGaAs, GaInAs, GaInAsN, etc.). The second light-emitting layer 111 may have any of a quantum well structure, a multiple quantum well structure, a quantum wire structure, and a quantum dot structure. The emission wavelength of the second light-emitting layer 111 is set to, for example, approximately 600 to 1100 nm. For example, the emission wavelength of the second light-emitting layer 111 is set to the same as the emission wavelength of the first light-emitting layer 105. The second light-emitting layer 111 is preferably disposed at or near an antinode of a standing wave generated in the resonator.

[0057] (Second set of second oxide constriction layers) As an example, the second set of second oxide constriction layers 112 are disposed between the second light-emitting layer 111 and the fourth cladding layer 113. The second oxide constriction layer 112 may be provided, for example, in the fourth cladding layer 113 or in the second semiconductor multilayer film reflector 114.

[0058] For example, the second oxidized constriction layer 112 has a non-oxidized region 112a and an oxidized region 112b surrounding the non-oxidized region 112a. The outer shape (shape in plan view) of the non-oxidized region 112a is determined by the inner circumferential shape of the oxidized region 112b. The diameter (average diameter) of the non-oxidized region 112a is determined by the inner diameter (average inner diameter) of the oxidized region 112b. The second oxidized constriction layer 112 is preferably disposed at or near a node of a standing wave generated in the resonator.

[0059] The non-oxidized region 112a functions as a current / light passing region. For example, the non-oxidized region 112a includes an Al-containing compound semiconductor (e.g., AlGaAs, AlAs, etc.). The non-oxidized region 112a preferably has an Al composition of 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more.

[0060] The oxidized region 112b is, for example, a circular (for example, ring-shaped) region in plan view that surrounds the non-oxidized region 112a. The oxidized region 112b has a higher resistance and a lower refractive index than the non-oxidized region 112a, and functions as a current / light confinement region. For example, the oxidized region 112b is made of an oxide containing Al (for example, Al x O y etc.)

[0061] (Second Semiconductor Multilayer Reflector) The second semiconductor multilayer reflector 114 (semiconductor DBR), for example, is a semiconductor multilayer reflector doped with p-type impurities, and has low light absorption, high reflectivity, and electrical conductivity. Multilayer reflectors are also called distributed Bragg reflectors (DBRs). The second semiconductor multilayer reflector 114 has a structure in which high-refractive index layers and low-refractive index layers with different refractive indices are alternately stacked with an optical thickness equal to one-quarter of the emission wavelength of each light-emitting layer. The low-refractive index layers are made of a compound semiconductor containing Al (e.g., AlGaAs, AlAs, etc.). The high-refractive index layers are made of a compound semiconductor (e.g., AlGaAs, GaAs, etc.). The low-refractive index layers are high-Al composition layers with a higher Al composition than the high-refractive index layers. It is preferable that the refractive index difference (Al composition difference) between the high-refractive index layers and the low-refractive index layers is large. This is because high reflectivity can be obtained with a small number of pairs. The Al composition of the low refractive index layer is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more. The Al composition of the high refractive index layer is preferably 0.2 or less, more preferably 0.15 or less, even more preferably 0.1 or less, and even more preferably 0.05 or less. Examples of p-type impurities (p-type dopants) in the second semiconductor multilayer film reflector 114 include Zn, Mg, Be, and C. Here, the reflectivity of the second semiconductor multilayer film reflector 114 is set slightly lower than that of the first semiconductor multilayer film reflector 102.

[0062] (Anode Electrode) The anode electrode 115 may have a single-layer structure or a multilayer structure. The anode electrode 115 is made of at least one metal (including alloys) selected from the group consisting of, for example, Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, Ge, and In. When the anode electrode 115 has a multilayer structure, it is made of materials such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, or Ag / Pd. The anode electrode 115 is electrically connected to the positive side of the driver.

[0063] (Electrode Pad) The electrode pad 117 may have a single-layer structure or a laminated structure. The electrode pad 117 is made of at least one metal (including alloys) selected from the group consisting of, for example, Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, Ge, and In. When the electrode pad 117 has a laminated structure, it is made of a material such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, or Ag / Pd.

[0064] (Anode Wiring) The anode wiring 118 is made of plating containing, for example, Au, Ag, Cu, or the like.

[0065] (Cathode Electrode) The cathode electrode 116 may have a single-layer structure or a laminated structure. The cathode electrode 116 is made of at least one metal (including alloys) selected from the group consisting of, for example, Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, Ge, and In. When the cathode electrode 116 has a laminated structure, it is made of materials such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, or Ag / Pd. The cathode electrode 116 is electrically connected to the cathode side of the driver.

[0066] (Buried Layer) The buried layer 119 is made of a resin such as BCB (benzocyclobutene) or polyamide, or a dielectric material such as SiN, SiO2, or SiON.

[0067] (Details of First and Second Oxidized Constriction Layers) In this specification, the oxidized constriction diameter of the oxidized constriction layer designated by reference numeral 104 is designated as D104, the oxidized constriction diameter of the oxidized constriction layer designated by reference numeral 106 is designated as D106, the oxidized constriction diameter of the oxidized constriction layer designated by reference numeral 110 is designated as D110, and the oxidized constriction diameter of the oxidized constriction layer designated by reference numeral 112 is designated as D112. Here, the oxidized constriction diameter refers to the average inner diameter of the oxidized region of the oxidized constriction layer (the average outer diameter of the non-oxidized region). Here, the inner periphery of the oxidized region (the outer periphery of the non-oxidized region) is the circumference, and the diameter of that circle is the oxidized constriction diameter.

[0068] In the first set of first and second oxidized constricting layers 104, 106, the second oxidized constricting layer 106 is closer to the emission surface ES than the first oxidized constricting layer 104 and has a smaller oxidized constriction diameter than the first oxidized constricting layer 104 (D106<D104).

[0069] In the second set of first and second oxidized constricting layers 110, 112, the second oxidized constricting layer 112 is closer to the emission surface ES than the first oxidized constricting layer 110 and has a smaller oxidized constriction diameter than the first oxidized constricting layer 110 (D112<D110).

[0070] The first and second oxidized constriction layers 104, 106 of the first set and the first and second oxidized constriction layers 110, 112 of the second set have the same oxidized constriction diameter (D104 = D110) of the first oxidized constriction layers 104, 110 and the same oxidized constriction diameter (D106 = D112) of the second oxidized constriction layers 106, 112. Here, the oxidized constriction diameter of each first oxidized constriction layer is set smaller than the inner diameter of the anode electrode 115, and the oxidized constriction diameter of each second oxidized constriction layer is set larger than the inner diameter of the anode electrode 115.

[0071] As can be seen from the above description, in the surface-emitting device 10, the multiple oxidation constriction layers are arranged in alternating order from the side closer (upper side) to the side farther (lower side) from the emission surface ES, with the oxidation constriction layers having the smallest oxidation constriction diameter at the top and the oxidation constriction layers having the large oxidation constriction diameter at the bottom. The oxidation constriction diameters of the first and second oxidation constriction layers in each set are asymmetric (different).

[0072] As an example, the in-plane positions of the non-oxidized region 104a of the first oxidized constricting layer 104 and the non-oxidized region 110a of the first oxidized constricting layer 110 are the same. As an example, the non-oxidized region 104a of the first oxidized constricting layer 104 and the non-oxidized region 110a of the first oxidized constricting layer 110 are surrounded by the anode electrode 115 in a planar view. As an example, the in-plane positions of the non-oxidized region 106a of the second oxidized constricting layer 106 and the non-oxidized region 112a of the second oxidized constricting layer 112 are the same.

[0073] The non-oxidized regions 104a, 106a of the first set of first and second oxidized constricting layers 104, 106 both contain Al, and the non-oxidized region 106a of the second oxidized constricting layer 106 has a higher Al composition than the non-oxidized region 104a of the first oxidized constricting layer 104. The non-oxidized region 104a of the first oxidized constricting layer 104 is made of a compound semiconductor such as AlGaAs. The non-oxidized region 106a of the second oxidized constricting layer 106 is made of a compound semiconductor such as AlGaAs or AlAs. The Al composition of the non-oxidized region 104a of the first oxidized constricting layer 104 is preferably 0.6 or more, more preferably 0.65 or more, even more preferably 0.7 or more, and even more preferably 0.75 or more. The Al composition of the non-oxidized region 104a of the first oxidized constricting layer 104 is preferably less than 0.8. The Al composition of the non-oxidized region 106a of the second oxidized constriction layer 106 is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more.

[0074] The non-oxidized regions 110a, 112a of the second set of first and second oxidized constricting layers 110, 112 both contain Al, and the non-oxidized region 112a of the second oxidized constricting layer 112 has a higher Al composition than the non-oxidized region 110a of the first oxidized constricting layer 110. The non-oxidized region 110a of the first oxidized constricting layer 110 is made of a compound semiconductor such as AlGaAs. The non-oxidized region 112a of the second oxidized constricting layer 112 is made of a compound semiconductor such as AlGaAs or AlAs. The Al composition of the non-oxidized region 110a of the first oxidized constricting layer 110 is preferably 0.6 or more, more preferably 0.65 or more, even more preferably 0.7 or more, and even more preferably 0.75 or more. The Al composition of the non-oxidized region 110a of the first oxidized constricting layer 110 is preferably less than 0.8. The Al composition of the non-oxidized region 112a of the second oxidized constriction layer 112 is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more.

[0075] It is preferable that the non-oxidized region 104a of the first oxidized constriction layer 104 and the non-oxidized region 110a of the first oxidized constriction layer 110 have the same oxidation rate under the same oxidation conditions. Here, the non-oxidized region 104a of the first oxidized constriction layer 104 and the non-oxidized region 110a of the first oxidized constriction layer 110 have the same Al composition and thickness.

[0076] It is preferable that the non-oxidized region 106a of the second oxidized constricting layer 106 and the non-oxidized region 112a of the second oxidized constricting layer 112 have the same oxidation rate under the same oxidation conditions. Here, the non-oxidized region 106a of the second oxidized constricting layer 106 and the non-oxidized region 112a of the second oxidized constricting layer 112 have the same Al composition and thickness.

[0077] Under the same oxidation conditions, it is preferable that the oxidation rate of each second oxidized constriction layer is higher than the oxidation rate of each first oxidized constriction layer, where each second oxidized constriction layer has a thickness equal to or greater than (e.g., equal to) the thickness of each first oxidized constriction layer and has a higher Al composition in the non-oxidized region than the Al composition in the non-oxidized region of each first oxidized constriction layer.

[0078] The inventors have found through electromagnetic field simulations that when a surface-emitting device has a structure in which the oxide constriction diameters (OA diameters) of the first and second oxide constriction layers sandwiching the light-emitting layer are asymmetric (different) (a structure having asymmetric OA diameters), the mode confinement near the light-emitting layer changes, and the FFP (Far Field Pattern) changes, compared to a structure in which the oxide constriction diameters (OA diameters) are symmetric (the same) (a structure having symmetric OA diameters).

[0079] Fig. 3A is a diagram showing the zeroth-order transverse mode distribution when the OA diameter is symmetric. Fig. 3B is a diagram showing the zeroth-order transverse mode distribution when the OA diameter is asymmetric. Fig. 4A is a diagram showing the first-order transverse mode distribution when the OA diameter is symmetric. Fig. 4B is a diagram showing the first-order transverse mode distribution when the OA diameter is asymmetric. Fig. 5A is a graph showing the FFP radiation angle characteristics of the zeroth-order mode when the OA diameter is symmetric and when the OA diameter is asymmetric. Fig. 5B is a graph showing the FFP radiation angle characteristics of the first-order mode when the OA diameter is symmetric and when the OA diameter is asymmetric. Fig. 5C is a graph showing the FFP radiation angle characteristics of the second-order mode when the OA diameter is symmetric and when the OA diameter is asymmetric.

[0080] As shown in Figures 3A and 3B, in the lowest order, zeroth mode, there is almost no difference in the transverse mode distribution (the white blurred area) between the case of a symmetric OA diameter and the case of an asymmetric OA diameter. However, as shown in Figures 4A and 4B, in the first order mode, when the OA diameter is asymmetric, the transverse mode distribution (the white blurred area) is slightly wider in the horizontal direction than when the OA diameter is symmetric, indicating that the transverse mode distribution has changed.

[0081] Furthermore, when this transverse mode is emitted to the outside, the FFP radiation angle changes, and as with the transverse mode distribution, there is almost no difference in the radiation angle between the symmetric OA diameter and the asymmetric OA diameter in the zeroth order (see Figure 5A), whereas for the first order and higher, the asymmetric OA diameter exhibits a narrower FFP radiation angle characteristic than the symmetric OA diameter (see Figures 5B and 5C). In particular, in the high-order second-order mode shown in Figure 5C, a narrowing of the FFP by about 7° in the FFP half-width is observed, indicating a high radiation angle narrowing effect.

[0082] FIG. 6 is a graph showing the oscillation threshold gain for each mode when the OA diameter is symmetric and when the OA diameter is asymmetric (large OA diameter on the exit side and small OA diameter on the exit side), and is a schematic diagram showing two surface-emitting elements with asymmetric OA diameters.

[0083] We investigated the effect on the FFP emission angle when the OA diameter relationship between the two oxide constriction layers sandwiching the light-emitting layer is reversed in the case of asymmetric OA diameters. Regarding the emission angles shown in Figures 5A to 5C, reversing the OA diameter relationship between the two oxide constriction layers sandwiching the light-emitting layer in the case of asymmetric OA diameters did not result in a significant difference. However, as shown in Figure 6, a significant difference was observed in the oscillation threshold gain for each mode. The calculation results showed that, as with the FFP, there was almost no difference in threshold gain for the zeroth order. However, when the asymmetric OA diameter is smaller on the output side, the oscillation threshold gain for the first order mode and higher order modes tends to increase significantly, making oscillation more difficult. This means that the surface-emitting device is less likely to emit light in higher order modes, which tend to have larger emission angles, and this results in a reduced emission angle in the final FFP. Furthermore, it was found that the radiation angle reduction effect was obtained in a wider range of modes, from lower to higher modes, compared to the case where the OA diameter was smaller on the output side (where the OA diameter was larger on the output side). Therefore, in this embodiment, the oxidation constriction diameter of the second oxidation constriction layer, which is the oxidation constriction layer on the output side of each set of first and second oxidation constriction layers, was made smaller than the oxidation constriction diameter of the first oxidation constriction layer.

[0084] <Operation of Surface-Emitting Element> The operation of the surface-emitting element 10 will be described below. When a power supply voltage of the driver is applied to the light-emitting element unit LE, a current flows into the light-emitting element unit LE from the anode side of the driver via the anode electrode 115. The current flowing into the light-emitting element unit LE passes through the second semiconductor multilayer film reflector 114 and the fourth cladding layer 113 in this order, is confined by the second oxide constriction layer 112, and is injected into the second light-emitting layer 111. The current injected into the second light-emitting layer 111 is confined by the first oxide constriction layer 110, passes through the third cladding layer 109, the tunnel junction layer 108, and the second cladding layer 107 in this order, is confined by the second oxide constriction layer 106, and is injected into the first light-emitting layer 105. At this time, due to the action of the tunnel junction layer 108, a current of the same magnitude as the current injected into the second light-emitting layer 111 is injected into the first light-emitting layer 105. Each of the second light-emitting layer 111 and the first light-emitting layer 105 into which a current has been injected emits light, and the light travels back and forth between the first and second semiconductor multilayer film reflectors 102, 114 while being confined by each oxide constriction layer and amplified by each light-emitting layer, and when oscillation conditions are satisfied, the light is emitted as laser light from the upper surface of the light-emitting element unit LE (the upper surface of the second semiconductor multilayer film reflector 114). The current injected into the first light-emitting layer 105 is confined by the first oxide constriction layer 104, and flows out to the cathode side of the driver via the first cladding layer 103, the first semiconductor multilayer film reflector 102, the substrate 101, and the cathode electrode 116 in this order.

[0085] <<Method for Manufacturing Surface Light Emitting Device>> An example of a method for manufacturing the surface light emitting device 10 will be described below with reference to the flowchart of Fig. 7. The overall flow is as follows: first, a semiconductor manufacturing method using semiconductor manufacturing equipment is used to simultaneously produce a plurality of surface light emitting devices 10 on a single wafer (hereinafter, also referred to as "substrate 101" for convenience) which is the base material of the substrate 101. Next, the series of the plurality of surface light emitting devices 10 are separated from each other by dicing (e.g., stealth dicing) to obtain chip-shaped surface light emitting devices 10.

[0086] In the first step S1, a stacked body L is produced (see FIG. 8 ). Specifically, the stacked body L is produced by stacking a first semiconductor multilayer reflector 102, a first cladding layer 103, an oxidized layer 104S (first oxidized layer), a first light-emitting layer 105, an oxidized layer 106S (second oxidized layer), a second cladding layer 107, a tunnel junction layer 108, a third cladding layer 109, an oxidized layer 110S (first oxidized layer), a second light-emitting layer 111, an oxidized layer 112S (second oxidized layer), a fourth cladding layer 113, and a second semiconductor multilayer reflector 114 in this order on a substrate 101 serving as a growth substrate by an epitaxial crystal growth method such as MOCVD (Metal Organic Chemical Vapor Deposition). When producing the laminate, methyl-based organometallic gases such as trimethylaluminum (TMAl), trimethylgallium (TMGa), and trimethylindium (TMIn), and arsine (AsH) gas are used as raw materials for the compound semiconductor, disilane (SiH) is used as a raw material for the donor impurity, and carbon tetrabromide (CBr) is used as a raw material for the acceptor impurity.

[0087] The oxidized layer 104S is a compound semiconductor layer (e.g., an AlGaAs layer) that will be used to form the first oxide constricting layer 104. The oxidized layer 106S is a compound semiconductor layer (e.g., an AlGaAs layer, an AlAs layer, etc.) that will be used to form the second oxide constricting layer 106 and has a higher oxidation rate than the oxidized layer 104S under the same oxidation conditions. The oxidized layer 110S is a compound semiconductor layer (e.g., an AlGaAs layer) that will be used to form the first oxide constricting layer 110 and has the same oxidation rate as the oxidized layer 104S under the same oxidation conditions. The oxidized layer 112S is a compound semiconductor layer (e.g., an AlGaAs layer, an AlAs layer, etc.) that will be used to form the second oxide constricting layer 112 and has a higher oxidation rate than the oxidized layer 110S under the same oxidation conditions and is the same as the oxidized layer 106S.

[0088] In the next step S2, the mesa M is formed. Specifically, prior to forming the mesa M, the stack is etched by photolithography and etching until the substrate 101 is exposed, thereby forming an electrode installation area EIA for installing the cathode electrode 116 (see FIG. 9 ). Next, a resist pattern for forming the mesa M is formed on the stack by photolithography. Next, the stack is etched by, for example, dry etching using the resist pattern as a mask. This etching is continued until at least the side surfaces of the oxidized layers 104S, 106S, 110S, and 112S are exposed (e.g., until the etched bottom surface is positioned within the first semiconductor multilayer film reflector 102). As a result, the mesa M is formed (see FIG. 10 ). Then, the resist pattern is removed. Note that the electrode installation area EIA may be formed after forming the mesa M.

[0089] In the next step S3, multiple oxidized constriction layers are formed (see FIG. 11 ). Specifically, the mesa M (see FIG. 10 ) formed in the stack is exposed to a high-temperature water vapor atmosphere (under the same oxidation conditions) to oxidize the oxidized layers 104S, 106S, 110S, and 112S by several micrometers from the side surfaces toward the center of the mesa. During this process, the oxidized layers 106S and 112S, which have a relatively high oxidation rate, have a longer oxidation distance, while the oxidized layers 104S and 110S, which have a relatively low oxidation rate, have a shorter oxidation distance. As a result, the oxidized layer 104S becomes the first oxidized constriction layer 104, the oxidized layer 106S becomes the second oxidized constriction layer 106, the oxidized layer 110S becomes the first oxidized constriction layer 110, and the oxidized layer 112S becomes the second oxidized constriction layer 112. As a result, the mesa M becomes a mesa structure MS.

[0090] In the next step S4, a burying layer 119 is formed (see FIG. 12). Specifically, the burying layer 119 is buried in the peripheral region of the mesa structure of the stack and one side of the first semiconductor multilayer film reflector 102 by photolithography and etching.

[0091] In the next step S5, the anode electrode 115, the electrode pad 117, and the cathode electrode 116 are formed (see FIG. 13 ). Specifically, for example, by lift-off, the anode electrode 115 is formed in a ring shape in plan view on the mesa structure, the electrode pad 117 is formed on the buried layer 119, and the cathode electrode 116 is formed thickly in the electrode installation area EIA on the substrate 101. At this time, for example, evaporation, sputtering, etc. are used to form a film of the electrode material.

[0092] In the final step S6, the anode wiring 118 is formed (see FIG. 14). Specifically, the anode wiring 118 is formed on the buried layer 113 by, for example, plating so that one end of the anode wiring 118 contacts the anode electrode 115 and the other end contacts the electrode pad 117. Prior to plating, it is preferable to form a seed layer in advance in the area to be plated.

[0093] <Effects of the Surface Light Emitting Element and the Method for Manufacturing the Surface Light Emitting Element> The effects of the surface light emitting element 10 and the method for manufacturing the surface light emitting element 10 will be described below.

[0094] The surface-emitting element 10 comprises a light-emitting element section LE in which at least one light-emitting layer (e.g., first and second light-emitting layers 105, 111) and a plurality of oxide constriction layers are stacked, and the plurality of oxide constriction layers comprise a first oxide constriction layer 104, a second oxide constriction layer 106 that is closer to the emission surface ES than the first oxide constriction layer 104 and has a smaller oxide constriction diameter than the first oxide constriction layer 104, a first oxide constriction layer 110, and a second oxide constriction layer 112 that is closer to the emission surface ES than the first oxide constriction layer 110 and has a smaller oxide constriction diameter than the first oxide constriction layer 110.

[0095] In the surface-emitting device 10, the oxide constriction diameter of the second oxide constriction layer of each set, which is closer to the emission surface ES, is smaller than the oxide constriction diameter of the first oxide constriction layer, so that the radiation angle can be reduced in a wider variety of modes. Reducing the radiation angle in a wider variety of modes means that the beam quality in a wider variety of modes can be improved.

[0096] As a result, the surface light emitting device 10 can realize a highly efficient and high output surface emitting laser that can reduce the radiation angle in a wider variety of modes.

[0097] Furthermore, the surface light emitting device 10 can also suppress oscillation in higher modes.

[0098] The surface light emitting device 10 has a plurality of pairs (for example, two pairs) of first and second oxide confinement diameters, which can further improve the luminous efficiency in the light emitting layer.

[0099] The above-mentioned multiple sets (for example, two sets) are stacked on top of each other and individually correspond to the first and second light-emitting layers 105, 111, with the corresponding light-emitting layer being disposed between the first and second oxide constriction layers of each set. That is, the first light-emitting layer 105 is disposed between the first and second oxide constriction layers 104, 106 of the first set, and the second light-emitting layer 111 is disposed between the first and second oxide constriction layers 110, 112 of the second set. This can further improve the luminous efficiency of each light-emitting layer.

[0100] A tunnel junction layer 108 is provided between two adjacent first and second light emitting layers 105 and 111. This allows currents of approximately the same magnitude to flow through the first and second light emitting layers 105 and 111.

[0101] In the plurality of sets of first and second oxide constriction layers, the first oxide constriction layer has the same oxide constriction diameter, and the second oxide constriction layer has the same oxide constriction diameter, which allows the first oxide constriction layers in each set and the second oxide constriction layers in each set to have the same oxidation rate (e.g., the same material, the same thickness) under the same oxidation conditions, making it easier to stabilize the epitaxial conditions and enabling stable production of asymmetric OA diameters.

[0102] The second oxide constriction layer of each set may be thicker than the first oxide constriction layer of the set, in which case the oxide constriction diameter of the second oxide constriction layer of each set may be smaller than the oxide constriction diameter of the first oxide constriction layer of the set.

[0103] Each of the first and second oxidized constriction layers of each set has a non-oxidized region and an oxidized region surrounding the non-oxidized region, the non-oxidized regions of the first and second oxidized constriction layers of the set both contain Al, and the non-oxidized region of the second oxidized constriction layer has a higher Al composition than the non-oxidized region of the first oxidized constriction layer. In this case, the oxidized constriction diameter of the second oxidized constriction layer of each set can be made smaller than the oxidized constriction diameter of the first oxidized constriction layer of the set.

[0104] A first semiconductor multilayer reflector 102 is provided on one side of the first and second light emitting layers 105, 111 in the direction perpendicular to the surface, and a second semiconductor multilayer reflector 114 is provided on the other side. This allows the surface light emitting device 10 to function as a surface emitting laser.

[0105] The light emitting element portion LE has a recess portion DP that exposes the side surfaces of at least a plurality of oxidized constriction layers (for example, oxidized constriction layers 104, 106, 110, and 112). This allows a plurality of oxidized constriction layers to be formed collectively by a single oxidation process.

[0106] The manufacturing method of the surface light emitting device 10 includes the steps of stacking at least an emitting layer (e.g., first and second emitting layers 105, 111), a first set of first and second oxidizable layers (e.g., oxidizable layers 104S, 106S), and a second set of first and second oxidizable layers (e.g., oxidizable layers 110S, 112S) on a substrate 101 to produce a laminate L; etching the laminate L until at least the side surfaces of the first and second oxidizable layers of each set are exposed; and oxidizing each of the first and second oxidizable layers of each set from the side surfaces, wherein the second oxidizable layer of each set is closer to the light emitting surface than the first oxidizable layer, and in the oxidation step, the oxidation rate of the second oxidizable layer of each set is higher than the oxidation rate of the first oxidizable layer of that set.

[0107] According to the manufacturing method of the surface light emitting device 10, it is possible to manufacture a highly efficient and high output surface emitting laser that can reduce the radiation angle in a wider variety of modes.

[0108] The emission surface ES is the surface of the laminate L opposite to the substrate 101. This makes it possible to manufacture a highly efficient, high-output surface-emitting laser that can reduce the radiation angle in a wider variety of modes.

[0109] The emission surface ES may be the surface of the laminate L on the substrate 101 side. This makes it possible to manufacture a highly efficient, high-output, back-emitting surface-emitting laser that can reduce the radiation angle in a wider variety of modes.

[0110] (Supplementary Explanation) In light-emitting devices (e.g., VCSELs) with a multi-junction structure having multiple PN junctions (double heterostructures in which an active layer is sandwiched between p-type cladding layers and n-type cladding layers), the two oxide confinement layers sandwiching each active layer above and below each other contribute to optical confinement while suppressing current spreading. Furthermore, a tunnel junction layer is placed between the PN junctions to prevent voltage rise when connecting PN junctions in series. This reduces the driving voltage without interfering with current injection into each active layer. With this multi-junction structure, the light emission and optical gain of each active layer simultaneously contribute to laser oscillation in response to the current injected into the device. This significantly increases the increase in optical output relative to the injected current (slope efficiency), resulting in a highly efficient light-emitting device.

[0111] On the other hand, light-emitting devices with multi-junction structures with multiple PN junctions require multiple oxide confinement layers for current confinement and light confinement. This increases the difference in equivalent refractive index between the mesa center and its periphery throughout the device, resulting in a tendency for the laser beam radiation angle to widen. If a multi-junction structure with multiple PN junctions were to use a single oxide confinement layer, carrier diffusion would increase in the active layer located far from the oxide confinement layer, weakening lateral light confinement in that area and reducing the overall device efficiency. While ion implantation can be used to reduce carrier diffusion, this method creates crystal defects in the crystal during ion implantation, making it undesirable from a reliability perspective to apply ion implantation to areas with relatively high optical intensity. Furthermore, since the refractive index in the region insulated by ion implantation is minimal, it contributes little to lateral light confinement, making it difficult to use it as a substitute for an oxide confinement layer while maintaining high efficiency comparable to that of an oxide confinement layer. In other words, ion implantation is generally used partially or additionally to improve efficiency.

[0112] 2. Surface light emitting device according to Example 2 of an embodiment of the present technology> Fig. 15 is a cross-sectional view of a surface light emitting device 20 according to Example 2 of an embodiment of the present technology. Fig. 16A is a diagram showing the oscillation threshold gain of a first-order mode in the case of an asymmetric OA diameter (alternating) and in the case of an asymmetric OA diameter (stepwise). Fig. 16B is a diagram showing the oscillation threshold gain of a second-order mode in the case of an asymmetric OA diameter (alternating) and in the case of an asymmetric OA diameter (stepwise).

[0113] As shown in Figure 15, the surface-emitting device 20 has the same configuration as the surface-emitting device 10 of Example 1, except that the oxide constriction diameter of the multiple (e.g., four) oxide constriction layers gradually decreases as they are closer to the emission surface (D104>D106>D110>D112).

[0114] In the surface-emitting device 20, the closer a pair of first and second oxidized constriction layers is to the light-emitting surface, the smaller the oxidized constriction diameter of the second oxidized constriction layer 112. That is, the oxidized constriction diameter D112 of the second oxidized constriction layer 112 is smaller than the oxidized constriction diameter D106 of the first oxidized constriction layer 106.

[0115] In the surface-emitting device 20, the closer a pair of first and second oxidized constriction layers is to the light-emitting surface, the smaller the oxidized constriction diameter of the first oxidized constriction layer in the pair. That is, the oxidized constriction diameter D110 of the second pair of first oxidized constriction layers 110 is smaller than the oxidized constriction diameter D104 of the first pair of first oxidized constriction layers 104.

[0116] In the surface light emitting device 20, the oxidation constriction diameter D110 of the first oxidation constriction layer 110 of the second set is smaller than the oxidation constriction diameter D106 of the second oxidation constriction layer 106 of the first set.

[0117] In the surface light emitting device 20, for example, it is preferable that the closer to the light emitting surface the plurality of (for example, four) oxidized constriction layers are, the higher the oxidation rate of the non-oxidized region is under the same oxidation conditions.

[0118] 16A and 16B, the surface light emitting device 20 having asymmetric OA diameters (stepwise) tends to have an even smaller FFP radiation angle than the surface light emitting device 10 according to Example 1 having asymmetric OA diameters (alternating), and it is thought that a higher radiation angle control effect can be achieved. In addition, in the surface light emitting device 20, when inspecting the OA diameters by optical transmission images using an infrared microscope or the like, all OA diameters are different, so that it is easy to measure them individually and to grasp the state after fabrication, which is also an advantage.

[0119] 3. Surface Light Emitting Device According to Example 3 of an Embodiment of the Present Technology FIG. 17 is a cross-sectional view of a surface light emitting device 30 according to Example 3 of an embodiment of the present technology.

[0120] As shown in Figure 17, the surface-emitting element 30 has a configuration generally similar to that of the surface-emitting element 20 of Example 2, except that the first and second oxide constriction layers of two adjacent pairs of pairs have the same oxide constriction diameter as the first oxide constriction layer of the pair closer to the emission surface and the second oxide constriction diameter of the pair farther from the emission surface.

[0121] More specifically, in the surface-emitting device 30, the oxidation constriction diameter D106 of the first set of second oxidized constriction layers 106 is the same as the oxidation constriction diameter D110 of the second set of first oxidized constriction layers 110. Furthermore, in the surface-emitting device 30, the oxidation constriction diameters D106 and D110 of the second oxidized constriction layers 106 and 110 are smaller than the oxidation constriction diameter D104 of the first oxidized constriction layer 104 and larger than the oxidation constriction diameter D112 of the second oxidized constriction layer 112.

[0122] In the surface light emitting device 30, for example, it is preferable that the second oxidized constriction layer 106 and the first oxidized constriction layer 110 have the same oxidation rate of the non-oxidized region under the same oxidation conditions.

[0123] According to the surface light emitting device 30, it is possible to obtain substantially the same effects as those of the surface light emitting device 20 according to the second embodiment.

[0124] 4. Surface Light Emitting Device According to Example 4 of an Embodiment of the Present Technology FIG. 18 is a cross-sectional view of a surface light emitting device 40 according to Example 4 of an embodiment of the present technology.

[0125] As shown in FIG. 18, the surface light emitting device 40 has a configuration generally similar to that of the surface light emitting device 30 according to the third embodiment, except that the oxidation constriction diameters of the oxidation constriction layers 110 and 112 are the same.

[0126] In the surface-emitting device 40, the oxidation constriction diameters D110 and D112 of the oxidation constriction layers 110 and 112 are smaller than the oxidation constriction diameter D106 of the first set of second oxidation constriction layers 106, and the oxidation constriction diameter D106 of the first set of second oxidation constriction layers 106 is smaller than the oxidation constriction diameter D104 of the first set of first oxidation constriction layers 104.

[0127] In the surface-emitting device 40, as an example, it is preferable that the oxidation rate of the non-oxidized region of the second oxidized constriction layer 106 under the same oxidation conditions is lower than that of the oxidized constriction layer 110 and higher than that of the first oxidized constriction layer 104. In the surface-emitting device 40, it is preferable that the oxidation rates of the non-oxidized regions of the oxidized constriction layers 110 and 112 under the same oxidation conditions are the same.

[0128] Here, examples of pairs of first and second oxidized constriction layers other than the first pair include a third pair of first and second oxidized constriction layers 104, 110 (D104>D110), a fourth pair of first and second oxidized constriction layers 104, 112 (D104>D112), a fifth pair of first and second oxidized constriction layers 106, 110 (D106>D110), and a sixth pair of first and second oxidized constriction layers 106, 112 (D106>D112).

[0129] According to the surface light emitting device 40, it is possible to obtain substantially the same effects as those of the surface light emitting device 30 according to the third embodiment.

[0130] 5. Surface Light Emitting Element According to Example 5 of an Embodiment of the Present Technology FIG. 19 is a cross-sectional view of a surface light emitting element 50 according to Example 5 of an embodiment of the present technology.

[0131] As shown in Figure 19, the surface-emitting element 50 has a configuration generally similar to that of the surface-emitting element 40 of Example 4, except that the oxidation constriction diameters D104 and D106 of the oxidation constriction layers 104 and 106 are the same, and the oxidation constriction diameters D110 and D112 of the oxidation constriction layers 110 and 112 are the same.

[0132] In the surface-emitting device 50, the oxidation rate of the non-oxidized region of the oxidized constriction layer 106 under the same oxidation conditions is preferably lower than that of the oxidized constriction layer 110 and the same as that of the oxidized constriction layer 104. In the surface-emitting device 50, the oxidation rates of the non-oxidized region of the oxidized constriction layers 104 and 106 under the same oxidation conditions are preferably the same. In the surface-emitting device 50, the oxidation rates of the non-oxidized region of the oxidized constriction layers 110 and 112 under the same oxidation conditions are preferably the same.

[0133] Here, examples of pairs of first and second oxidized constriction layers other than the first and second pairs include a third pair of first and second oxidized constriction layers 104, 110 (D104>D110), a fourth pair of first and second oxidized constriction layers 104, 112 (D104>D112), a fifth pair of first and second oxidized constriction layers 106, 110 (D106>D110), and a sixth pair of first and second oxidized constriction layers 106, 112 (D106>D112).

[0134] According to the surface light emitting device 50, it is possible to obtain substantially the same effects as those of the surface light emitting device 40 according to the fourth embodiment.

[0135] 6. Surface Light Emitting Device According to Example 6 of an Embodiment of the Present Technology FIG. 20 is a cross-sectional view of a surface light emitting device 60 according to Example 6 of an embodiment of the present technology.

[0136] As shown in Figure 20, the surface-emitting element 60 has a configuration generally similar to that of the surface-emitting element 50 of Example 5, except that the oxidation constriction diameter D106 of the first set of second oxidation constriction layers 106 and the oxidation constriction diameters D110 and D112 of the oxidation constriction layers 110 and 112 are the same.

[0137] In the surface light emitting device 60, the oxidation rate of the non-oxidized region of the second oxidized constriction layer 106 under the same oxidation conditions is preferably the same as that of the oxidized constriction layers 110 and 112 and higher than that of the first oxidized constriction layer 104.

[0138] Here, examples of pairs of first and second oxidized constriction layers other than the first pair include a third pair of first and second oxidized constriction layers 104, 110 (D104>D110) and a fourth pair of first and second oxidized constriction layers 104, 112 (D104>D112).

[0139] According to the surface light emitting device 60, it is possible to obtain substantially the same effects as those of the surface light emitting device 50 according to the fifth embodiment.

[0140] 7. Surface Light Emitting Device According to Example 7 of an Embodiment of the Present Technology FIG. 21 is a cross-sectional view of a surface light emitting device 70 according to Example 7 of an embodiment of the present technology.

[0141] As shown in FIG. 21, the surface light emitting device 70 has a configuration generally similar to that of the surface light emitting device 20 according to the second embodiment, except that it does not have the first set of first oxidized constriction layers 104 .

[0142] Here, examples of pairs of first and second oxide constriction diameters other than the first pair include a third pair of first and second oxide constriction layers 106, 110 (D106>D110) and a fourth pair of first and second oxide constriction layers 106, 112 (D106>D112).

[0143] According to the surface light emitting device 70, although the radiation angle reducing effect is slightly inferior to that of the surface light emitting device 20 according to the second embodiment, it is possible to obtain substantially the same effect as that of the surface light emitting device 20 according to the second embodiment.

[0144] 8. Surface Light Emitting Device According to Example 8 of an Embodiment of the Present Technology FIG. 22 is a cross-sectional view of a surface light emitting device 80 according to Example 8 of an embodiment of the present technology.

[0145] As shown in Figure 22, the surface-emitting element 80 has a configuration generally similar to that of the surface-emitting element 70 of Example 7, except that the oxidation constriction diameter D106 of the oxidation constriction layer 106 and the oxidation constriction diameter D110 of the second set of first oxidation constriction layers 110 are the same.

[0146] In the surface light emitting device 80, the oxidation rate of the non-oxidized region of the oxidized constriction layer 106 and the first oxidized constriction layer 110 under the same oxidation conditions is preferably the same and lower than that of the second oxidized constriction layer 112.

[0147] Here, a third set of first and second oxidized constriction diameters other than the second set includes the first and second oxidized constriction layers 106 and 112 (D106>D112).

[0148] According to the surface light emitting device 80, although the radiation angle reducing effect is slightly inferior to that of the surface light emitting device 70 according to the seventh embodiment, it is possible to obtain substantially the same effect as that of the surface light emitting device 70 according to the seventh embodiment.

[0149] 9. Surface Light Emitting Device According to Example 9 of an Embodiment of the Present Technology FIG. 23 is a cross-sectional view of a surface light emitting device 90 according to Example 9 of an embodiment of the present technology.

[0150] The surface-emitting device 90 has a configuration generally similar to that of the surface-emitting device 80 of Example 8, except that the oxidation constriction diameters D110 and D112 of the oxidation constriction layers 110 and 112 are the same, and the oxidation constriction diameter D106 of the oxidation constriction layer 106 is larger than the oxidation constriction diameters D110 and D112.

[0151] In the surface light emitting device 90, the oxidation rate of the non-oxidized region of the oxidized constriction layer 110 under the same oxidation conditions is preferably the same as that of the oxidized constriction layer 112 and higher than that of the oxidized constriction layer 106.

[0152] Here, examples of pairs of first and second oxide constriction diameters include a third pair of first and second oxide constriction layers 106, 110 (D106>D110) and a fourth pair of first and second oxide constriction layers 106, 112 (D106>D112).

[0153] According to the surface light emitting device 90, although the radiation angle reducing effect is slightly inferior to that of the surface light emitting device 70 according to the seventh embodiment, it is possible to obtain substantially the same effect as that of the surface light emitting device 70 according to the seventh embodiment.

[0154] 10. Surface Light Emitting Device According to Example 10 of an Embodiment of the Present Technology FIG. 24 is a cross-sectional view of a surface light emitting device 100 according to Example 10 of an embodiment of the present technology.

[0155] The surface light emitting device 100 has a configuration generally similar to that of the surface light emitting device 10 according to the first embodiment, except that it does not have a multi-junction structure.

[0156] The surface light emitting device 100 does not have the tunnel junction layer 108 , the third cladding layer 109 , the second light emitting layer 111 , the second set of first and second oxide constriction layers 110 and 112 , and the fourth cladding layer 113 .

[0157] According to the surface light emitting device 100, although it is inferior in terms of high output, it is possible to obtain substantially the same effects as the surface light emitting device 10 according to the first embodiment while having a simple configuration.

[0158] 11. Surface Light Emitting Device According to Example 11 of an Embodiment of the Present Technology FIG. 25 is a cross-sectional view of a surface light emitting device 11 according to Example 11 of an embodiment of the present technology.

[0159] The surface light emitting device 11 has a configuration generally similar to that of the surface light emitting device 10 according to the first embodiment, except that it is a surface emitting laser of a back surface emission type.

[0160] In the surface light emitting element 11 , the light emitting surface is the rear surface (lower surface) of the substrate 101 .

[0161] Here, one of the two pairs of first and second oxide constriction layers is the first pair of first and second oxide constriction layers 112, 110 (D112>D110), and the other is the second pair of first and second oxide constriction layers 106, 104 (D106>D104).

[0162] In the surface-emitting element 11, the reflectance of the second semiconductor multilayer film reflector 114 is set to be slightly higher than the reflectance of the first semiconductor multilayer film reflector 102. The surface-emitting element 11 emits laser light to the rear surface side (lower surface side) of the substrate 101.

[0163] In the surface light emitting device 11, for example, an anode electrode 115 is provided in a solid state on the top of the mesa structure MS (more specifically, on the upper surface of the second semiconductor multilayer film reflector 114). The anode electrode 115 can also function as a metal reflector and can form a hybrid mirror together with the second semiconductor multilayer film reflector 114.

[0164] The surface light emitting device 11 can be manufactured by a manufacturing method generally similar to the manufacturing method of the surface light emitting device 10 according to the first embodiment.

[0165] According to the surface light emitting device 11, it is possible to provide a back-emitting surface emitting laser that can obtain substantially the same effects as the surface light emitting device 10 according to the first embodiment.

[0166] 12. Surface Light Emitting Device According to Example 12 of an Embodiment of the Present Technology FIG. 26 is a cross-sectional view of a surface light emitting device 120 according to Example 12 of an embodiment of the present technology.

[0167] The surface light emitting device 120 has a configuration generally similar to that of the surface light emitting device 20 according to the second embodiment, except that it is a surface emitting laser of a back surface emission type.

[0168] In the surface light emitting element 120 , the light emitting surface is the rear surface (lower surface) of the substrate 101 .

[0169] Here, one of the two pairs of first and second oxide constriction layers is the first pair of first and second oxide constriction layers 112, 110 (D112>D110), and the other is the second pair of first and second oxide constriction layers 106, 104 (D106>D104).

[0170] In the surface-emitting element 120, the reflectance of the second semiconductor multilayer film reflector 114 is set to be slightly higher than the reflectance of the first semiconductor multilayer film reflector 102. The surface-emitting element 120 emits laser light to the rear surface side (lower surface side) of the substrate 101.

[0171] In the surface light emitting device 120, for example, an anode electrode 115 is provided in a solid state on the top of the mesa structure MS (more specifically, on the upper surface of the second semiconductor multilayer film reflector 114). The anode electrode 115 can also function as a metal reflector, and can form a hybrid mirror together with the second semiconductor multilayer film reflector 114.

[0172] The surface light emitting device 120 can be manufactured by a manufacturing method generally similar to the manufacturing method of the surface light emitting device 20 according to the second embodiment.

[0173] According to the surface light emitting element 120, it is possible to provide a back-emitting surface emitting laser that can obtain substantially the same effects as the surface light emitting element 20 according to the second embodiment.

[0174] 13. Surface Light Emitting Device According to Example 13 of an Embodiment of the Present Technology FIG. 27 is a cross-sectional view of a surface light emitting device 130 according to Example 13 of an embodiment of the present technology.

[0175] The surface-emitting element 130 has a configuration generally similar to that of the surface-emitting element 10 of Example 1, except that the oxidation constriction diameter D104 of the first set of first oxidation constriction layers 104 is larger than the oxidation constriction diameter D110 of the second set of first oxidation constriction layers 110.

[0176] According to the surface light emitting device 130, it is possible to obtain substantially the same effects as those of the surface light emitting device 10 according to the first embodiment.

[0177] 14. Surface Light Emitting Device According to Example 14 of an Embodiment of the Present Technology FIG. 28 is a cross-sectional view of a surface light emitting device 140 according to Example 14 of an embodiment of the present technology.

[0178] The surface-emitting element 140 has a configuration generally similar to that of the surface-emitting element 10 of Example 1, except that in each set of first and second oxide constriction layers, the thickness of the second oxide constriction layer is thicker than the thickness of the first oxide constriction layer.

[0179] As an example, in the surface-emitting device 140, the second oxidized constricting layer 106 is thicker than the first oxidized constricting layer 104 in the first set, and the second oxidized constricting layer 112 is thicker than the first oxidized constricting layer 110 in the second set. The thickness of the first oxidized constricting layer 104 in the first set is the same as the thickness of the first oxidized constricting layer 110 in the second set. The thickness of the second oxidized constricting layer 106 in the first set is the same as the thickness of the second oxidized constricting layer 112 in the second set. It is preferable that the Al composition of the non-oxidized regions of each oxidized constricting layer is the same.

[0180] That is, in the surface light emitting device 140, similarly to the surface light emitting device 10 according to Example 1, in each set of first and second oxidized constricting layers, it is preferable that the oxidation rate of the non-oxidized region of the second oxidized constricting layer is higher than that of the first oxidized constricting layer under the same oxidation conditions. As long as this condition is satisfied, the Al composition of the non-oxidized region of each oxidized constricting layer can be changed as appropriate.

[0181] The surface light emitting device 140 can be manufactured by a manufacturing method generally similar to the manufacturing method of the surface light emitting device 10 according to the first embodiment.

[0182] According to the surface light emitting device 140, it is possible to obtain substantially the same effects as those of the surface light emitting device 10 according to the first embodiment.

[0183] 15. Surface Light Emitting Device According to Example 15 of an Embodiment of the Present Technology FIG. 29 is a cross-sectional view of a surface light emitting device 150 according to Example 15 of an embodiment of the present technology.

[0184] The surface light emitting device 150 has a configuration generally similar to that of the surface light emitting device 20 according to the second embodiment, except that the thickness of the multiple (for example, four) oxide constriction layers increases as they are closer to the light emitting surface.

[0185] As an example, in the surface-emitting device 150, the second oxidized constricting layer 106 in the first set is thicker than the first oxidized constricting layer 104, and the second oxidized constricting layer 112 in the second set is thicker than the first oxidized constricting layer 110. The first oxidized constricting layer 110 in the second set is thicker than the second oxidized constricting layer 106 in the first set. It is preferable that the Al composition of the non-oxidized regions of each oxidized constricting layer be the same.

[0186] That is, in the surface light emitting device 150, similarly to the surface light emitting device 20 according to Example 2, it is preferable that the oxidation rate of the non-oxidized region of the multiple (e.g., four) oxidized constriction layers closer to the emission surface is higher under the same oxidation conditions. As long as this condition is satisfied, the Al composition of the non-oxidized region of each oxidized constriction layer can be changed as appropriate.

[0187] The surface light emitting device 150 can be manufactured by a manufacturing method generally similar to the manufacturing method of the surface light emitting device 20 according to the second embodiment.

[0188] According to the surface light emitting device 150, it is possible to obtain substantially the same effects as those of the surface light emitting device 20 according to the second embodiment.

[0189] 16. Surface light emitting device according to Example 16 of an embodiment of the present technology> Fig. 30 is a cross-sectional view of a surface light emitting device 160 according to Example 16 of an embodiment of the present technology. Fig. 31 is a plan view of a surface light emitting device 160 according to Example 16 of an embodiment of the present technology. Fig. 30 is a cross-sectional view taken along line 30-30 of Fig. 31 .

[0190] As shown in FIGS. 30 and 31, the surface light emitting element 160 has a configuration generally similar to that of the surface light emitting element 10 according to the first embodiment, except that the light emitting element portion LE has a mesare-less structure.

[0191] The surface light emitting element 160 does not have a buried layer 119. In the surface light emitting element 160, a plurality of (e.g., four) trenches 121 (grooves) are formed as recesses in the upper surface of the light emitting element portion LE. The plurality of (e.g., four) trenches 121 are arranged to surround the non-oxidized regions of a plurality of (e.g., four) oxidized constriction layers. Each trench 121 penetrates the oxidized region of each oxidized constriction layer. An insulating film 122 made of a dielectric material such as SiO, SiN, or SiON is buried in each trench 121. An ion implantation region IIA having a circular shape in plan view is provided inside the region of the light emitting element portion LE where the plurality of trenches 121 are formed to suppress current leakage. Note that each trench 121 may be an air gap.

[0192] In the surface light emitting element 160 , the cathode electrode 116 is provided in a solid state on the rear surface (lower surface) of the substrate 101 .

[0193] The surface-emitting device 160 can be manufactured by a method similar to that of the surface-emitting device 10 of Example 1, except that multiple trenches 121 are formed as defect portions instead of the defect portions DP that define the mesa structure MS, the oxidized layer that is the material for each oxidized constriction layer is oxidized from the side exposed to each trench 121 to form the oxidized constriction layer, and then an insulating film 22 is buried in the trenches 121.

[0194] According to the surface light emitting device 160, it is possible to provide a surface emitting laser having a mesare-less structure, which can obtain the same effects as the surface light emitting device 10 according to the first embodiment.

[0195] 17. Surface Light Emitting Device According to Example 17 of an Embodiment of the Present Technology FIG. 32 is a cross-sectional view of a surface light emitting device 170 according to Example 17 of an embodiment of the present technology.

[0196] As shown in FIG. 32, the surface light emitting element 170 has the same configuration as the surface light emitting element 10 according to the first embodiment, except that it is a surface emission type LED (light emitting diode).

[0197] The surface-emitting device 170 does not have the second semiconductor multilayer film reflector 114, and an anode electrode 115 is provided on the fourth cladding layer 113. It is also possible to configure a back-emitting LED by removing the first semiconductor multilayer film reflector 102 from the surface-emitting device 10 instead of the second semiconductor multilayer film reflector 114.

[0198] The surface emitting device 170 can be manufactured by a method generally similar to that of the surface emitting device 10 of Example 1, except that the second semiconductor multilayer film reflector 114 is not laminated when the laminate is generated.

[0199] According to the surface light emitting device 170, it is possible to provide a surface emission type LED that can obtain substantially the same effects as the surface light emitting device 10 according to the first embodiment.

[0200] 18. Surface light emitting element array including a plurality of surface light emitting elements according to Example 1 of an embodiment of the present technology> FIG. 33 is a cross-sectional view of a surface light emitting element array 1 including a plurality of surface light emitting elements 10 according to Example 1 of an embodiment of the present technology.

[0201] The surface light emitting element array 1 includes a plurality of surface light emitting elements 10 arranged in a two-dimensional array (e.g., a staggered pattern, a matrix pattern, etc.). The plurality of surface light emitting elements 10 share at least a substrate 101 (e.g., the substrate 101 and at least a part of the first semiconductor multilayer film reflector 102).

[0202] The surface light emitting element array 1 can obtain a very high total output and can be adapted to point light irradiation, etc. Note that the surface light emitting element array may be configured by arranging any of the surface light emitting elements of Examples 2 to 17 in a two-dimensional array.

[0203] 19. Modifications of the Present Technology The present technology is not limited to the examples of the above-described embodiment, and can be modified as appropriate.

[0204] 34, a surface emitting device 10-1 according to a modified example of Example 1 may have an intra-cavity structure in which the cathode electrode 116 is disposed on the first semiconductor multilayer film reflector 102. In this case, a semi-insulating substrate or an insulating substrate may be used for the substrate 101.

[0205] For example, as shown in FIG. 35, as in the surface-emitting device 100-1 according to variant example 1 of Example 10, the light-emitting device unit LE may have a single light-emitting layer (first light-emitting layer 105) and at least three (for example, three) oxidized constriction layers 104, 106, 110 (D104=D110, D106>D104).

[0206] For example, as shown in Figure 36, as in the surface-emitting element 100-2 relating to variant example 2 of Example 10, the light-emitting element unit LE may have a single light-emitting layer (first light-emitting layer 105) and at least three (e.g., three) oxidized constriction layers 104, 106, 110 (D104>D106>D110).

[0207] For example, as shown in Figure 37, in a surface-emitting device 130-1 according to a modified example of Example 13, the oxidation constriction diameter D112 of the second oxidized constriction layer 112 of the second set may be smaller than the oxidation constriction diameter D106 of the second oxidized constriction layer 106 of the first set, and the oxidation constriction diameter D104 of the first oxidized constriction layer 104 of the first set may be the same as the oxidation constriction diameter D110 of the first oxidized constriction layer 110 of the second set.

[0208] The surface light emitting device according to the present technology may have three or more light emitting layers stacked on each other. In this case, it is preferable that a tunnel junction layer is provided between at least one pair of two light emitting layers adjacent to each other in the direction perpendicular to the surface.

[0209] The surface light emitting device according to the present technology may have five or more oxide constriction layers stacked on one another. In this case, the five or more oxide constriction layers preferably include at least one pair of first and second oxide constriction layers.

[0210] The surface light emitting devices of the above-described embodiments and modifications may be arranged in a one-dimensional array to form a surface light emitting device array.

[0211] In the above-described embodiments and modifications, a GaAs-based surface-emitting device (a material system lattice-matched to GaAs) has been mainly described, but the present technology is not limited thereto and can also be applied to, for example, an InP-based surface-emitting device (a material system lattice-matched to InP), a GaN-based surface-emitting device (a material system lattice-matched to GaN), etc. Examples of InP-based devices include AlGaInP-based, AlGaInAs-based, and AlInAs-based devices.

[0212] That is, the surface light emitting device according to the present technology can use a material that emits light at any wavelength within the wavelength range of 200 to 2000 nm.

[0213] The light emitting element portion LE is not limited to a semiconductor multilayer film reflector, and may have a reflector made of one or a combination of two or more materials selected from semiconductors, dielectrics, and metals.

[0214] In the surface-emitting devices of the above-mentioned embodiments and modifications, at least one of the first and second semiconductor multilayer film reflectors 102 and 114 may also function as a cladding layer, thereby making it possible to omit at least one of the first and fourth cladding layers 103 and 113.

[0215] In the surface light emitting devices according to the above-described embodiments and modifications, the conductivity types (p-type and n-type) of the first and second semiconductor structures may be reversed. In this case, however, the positional relationship between the anode electrode and the cathode electrode must also be reversed.

[0216] Parts of the configurations of the surface light emitting devices according to the above-described embodiments and modifications may be combined within a range that does not contradict each other.

[0217] In each of the above-described embodiments and modifications, the arrangement, material, conductivity type, thickness, width, numerical value, shape, size, etc. of each layer constituting the surface-emitting device can be appropriately changed within the range in which the surface-emitting device functions.

[0218] 20. Application Examples to Electronic Devices The technology according to the present disclosure (the present technology) can be applied to various products (electronic devices). For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot, a low-power device (e.g., a smartphone, a smartwatch, a tablet, a mouse, etc.), or a wireless or wired communication device.

[0219] The surface light emitting device according to the present technology can also be applied as a light source for devices that form or display images using light (for example, printers, copiers, projectors, head-mounted displays, head-up displays, etc.).

[0220] 21. Example of Application of Surface Light Emitting Device to Distance Measuring Device An application example of the surface light emitting device 10 according to Example 1 of an embodiment of the present technology will be described below.

[0221] 38 illustrates an example of a schematic configuration of a distance measurement device 1000 (distance measuring device) including the surface light emitting element 10 according to Example 1, as an example of an electronic device according to the present technology. The distance measurement device 1000 measures the distance to a subject S by a TOF (Time Of Flight) method. The distance measurement device 1000 includes the surface light emitting element 10. The distance measurement device 1000 includes, for example, the surface light emitting element 10, a light receiving device 125, lenses 128 and 138, a signal processing unit 145, a control unit 155, a display unit 165, and a storage unit 175.

[0222] The light receiving device 125 receives light emitted from the surface light emitting device 10 and reflected by the subject S (object). That is, the light receiving device 125 detects the light reflected by the subject S. The lens 128 is a lens, such as a collimating lens, for converting the light emitted from the surface light emitting device 10 into parallel light. The lens 138 is a lens, such as a condensing lens, for collecting the light reflected by the subject S and guiding it to the light receiving device 125.

[0223] The signal processing unit 145 is a circuit for generating a signal corresponding to the difference between the signal input from the light-receiving device 125 and the reference signal input from the control unit 155. The control unit 155 is configured to include, for example, a time-to-digital converter (TDC). The reference signal may be a signal input from the control unit 155 or an output signal from a detection unit that directly detects the output of the surface-emitting device 10. The control unit 155 is, for example, a processor that controls the surface-emitting device 10, the light-receiving device 125, the signal processing unit 145, the display unit 165, and the storage unit 175. The control unit 155 is a circuit that measures the distance to the subject S based on the signal generated by the signal processing unit 145. The control unit 155 generates a video signal for displaying information about the distance to the subject S and outputs it to the display unit 165. The display unit 165 displays the information about the distance to the subject S based on the video signal input from the control unit 155. The control unit 155 stores the information about the distance to the subject S in the storage unit 175.

[0224] In this application example, instead of the surface light emitting element 10 of Example 1, surface light emitting elements 10-1, 20, 30, 40, 50, 60, 70, 80, 90, 100, 100-1, 100-2, 110, 120, 130, 140, 150, 160, 170, and surface light emitting element array 1 can also be applied to distance measurement device 1000.

[0225] 22. Example in which distance measuring device is mounted on a moving body> FIG. 39 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving body control system to which the technology according to the present disclosure can be applied.

[0226] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 39, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053.

[0227] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0228] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0229] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, a distance measurement device 12031 is connected to the outside-vehicle information detection unit 12030. The distance measurement device 12031 includes the above-described distance measurement device 1000. The outside-vehicle information detection unit 12030 causes the distance measurement device 12031 to measure the distance to an object outside the vehicle (subject S) and acquires the distance data obtained thereby. The outside-vehicle information detection unit 12030 may perform object detection processing for people, cars, obstacles, signs, etc. based on the acquired distance data.

[0230] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0231] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc.

[0232] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0233] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0234] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying information to vehicle occupants or the outside of the vehicle. In the example of Fig. 39, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0235] FIG. 40 is a diagram showing an example of the installation position of the distance measurement device 12031.

[0236] In FIG. 40, a vehicle 12100 has distance measurement devices 12101, 12102, 12103, 12104, and 12105 as a distance measurement device 12031.

[0237] Distance measuring devices 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of vehicle 12100. Distance measuring device 12101 provided on the front nose and distance measuring device 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire data ahead of vehicle 12100. Distance measuring devices 12102 and 12103 provided on the side mirrors mainly acquire data on the sides of vehicle 12100. Distance measuring device 12104 provided on the rear bumper or back door mainly acquires data behind vehicle 12100. The forward data acquired by distance measuring devices 12101 and 12105 is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, etc.

[0238] 40 shows an example of the detection ranges of the distance measurement devices 12101 to 12104. Detection range 12111 indicates the detection range of the distance measurement device 12101 provided on the front nose, detection ranges 12112 and 12113 indicate the detection ranges of the distance measurement devices 12102 and 12103 provided on the side mirrors, respectively, and detection range 12114 indicates the detection range of the distance measurement device 12104 provided on the rear bumper or back door.

[0239] For example, based on the distance data obtained from the distance measuring devices 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the detection ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which runs autonomously without relying on driver operation.

[0240] For example, based on the distance data obtained from the distance measuring devices 12101 to 12104, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0241] The above describes an example of a mobile object control system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to the distance measurement device 12031 of the above-described configuration.

[0242] The present technology may also be configured as follows: (1) A surface-emitting device including a light-emitting element portion in which at least one light-emitting layer and a plurality of oxide constriction layers are stacked, wherein the plurality of oxide constriction layers include: a first oxide constriction layer; and a second oxide constriction layer that is closer to the emission surface than the first oxide constriction layer and has a smaller oxide constriction diameter than the first oxide constriction layer. (2) The surface-emitting device according to (1), wherein the light-emitting layer is disposed between the first and second oxide constriction layers. (3) The surface-emitting device according to (1) or (2), wherein there are a plurality of pairs of the first and second oxide constriction layers. (4) The surface-emitting device according to (3), wherein the at least one light-emitting layer is a plurality of light-emitting layers, wherein the plurality of pairs are stacked on top of each other and individually correspond to the plurality of light-emitting layers, and wherein the corresponding light-emitting layer is disposed between the first and second oxide constriction layers of each pair. (5) The surface-emitting device according to (4), wherein a tunnel junction layer is provided between two adjacent light-emitting layers. (6) The surface-emitting device according to any one of (3) to (5), wherein the plurality of sets have the same oxidation constriction diameter of the first oxide constriction layer and the same oxidation constriction diameter of the second oxide constriction layer. (7) The surface-emitting device according to any one of (3) to (6), wherein the plurality of sets are closer to the emission surface, the smaller the oxidation constriction diameter of the second oxide constriction layer. (8) The surface-emitting device according to any one of (3) to (7), wherein the plurality of sets are closer to the emission surface, the smaller the oxidation constriction diameter of the first oxide constriction layer. (9) The surface-emitting device according to any one of (3) to (8), wherein the plurality of sets have the same oxidation constriction diameter of the first oxide constriction layer. (10) The surface-emitting device according to any one of (3) to (9), wherein the plurality of sets are closer to the emission surface, the smaller the oxidation constriction diameter of the first oxide constriction layer. (11) The surface-emitting device according to any one of (3) to (10), wherein the plurality of sets of the first and second oxidized constriction layers have the same oxidized constriction diameter of the second oxidized constriction layer. (12) The surface-emitting device according to any one of (3) to (11), wherein, in two adjacent sets of the plurality of sets, the oxidized constriction diameter of the first oxidized constriction layer of the set closer to the light-emitting surface and the oxidized constriction diameter of the second oxidized constriction layer of the set farther from the light-emitting surface are the same.(13) The surface-emitting device according to any one of (1) to (12), wherein the second oxidized constriction layer is thicker than the first oxidized constriction layer. (14) The surface-emitting device according to any one of (1) to (13), wherein each of the first and second oxidized constriction layers has a non-oxidized region and an oxidized region surrounding the non-oxidized region, wherein the non-oxidized regions of the first and second oxidized constriction layers both contain Al, and wherein the non-oxidized region of the second oxidized constriction layer has a higher Al composition than the non-oxidized region of the first oxidized constriction layer. (15) The surface-emitting device according to any one of (1) to (14), wherein a reflecting mirror is provided on one and / or the other side of the light-emitting layer in a direction perpendicular to the surface. (16) The surface-emitting device according to any one of (1) to (15), wherein the light-emitting element portion has a recessed portion exposing at least side surfaces of the plurality of oxidized constriction layers. (17) A surface light emitting device array in which a plurality of surface light emitting elements are arranged in an array, the surface light emitting elements comprising a light emitting device section in which at least one light emitting layer and a plurality of oxide constriction layers are stacked, the plurality of oxide constriction layers including: a first oxide constriction layer, and a second oxide constriction layer that is closer to the emission surface than the first oxide constriction layer and has a smaller oxide constriction diameter than the first oxide constriction layer. (18) An electronic device comprising a surface light emitting element comprising a light emitting device section in which at least one light emitting layer and a plurality of oxide constriction layers are stacked, the plurality of oxide constriction layers including: a first oxide constriction layer, and a second oxide constriction layer that is closer to the emission surface than the first oxide constriction layer and has a smaller oxide constriction diameter than the first oxide constriction layer. (19) A method for manufacturing a surface light emitting device, comprising: a step of laminating at least a light emitting layer and first and second oxidizable layers on a substrate to produce a laminate; a step of etching the laminate until at least side surfaces of the first and second oxidizable layers are exposed; and a step of oxidizing each of the first and second oxidizable layers from the side surfaces, wherein the second oxidizable layer is closer to the light emitting surface than the first oxidizable layer, and in the oxidizing step, an oxidation rate of the second oxidizable layer is higher than an oxidation rate of the first oxidizable layer. (20) The method for manufacturing a surface light emitting device according to (19), wherein the light emitting surface is a surface of the laminate opposite to the substrate side or a surface of the laminate facing the substrate side.

[0243] 10, 10-1, 20, 30, 40, 50, 60, 70, 80, 90, 100, 100-1, 100-2, 110, 120, 130, 140, 150, 160, 170: surface-emitting element 102: first semiconductor multilayer film reflector (reflector) 104: oxidation constriction layer 104a: non-oxidized region 104b: oxidation region 105: first light-emitting layer (light-emitting layer) 106: oxidation constriction layer 106a: non-oxidized region 106b: oxidation region 108: tunnel junction layer 110: oxidation constriction layer 110a: non-oxidized region 110b: oxidation region 111: second light-emitting layer (light-emitting layer) 112: oxidation constriction layer 112a: non-oxidized region 112b: oxidation region 114: Second semiconductor multilayer film reflector (reflector) 121: Trench (defective portion) 1000: Electronic device LE: Light emitting element portion ES: Emission surface DP: Defective portion L: Laminate

Claims

1. A surface-emitting device comprising a light-emitting element portion in which at least one light-emitting layer and a plurality of oxidized constriction layers are stacked, the plurality of oxidized constriction layers including: a first oxidized constriction layer; and a second oxidized constriction layer that is closer to the emission surface than the first oxidized constriction layer and has a smaller oxidized constriction diameter than the first oxidized constriction layer.

2. The surface light emitting device according to claim 1, wherein the light emitting layer is disposed between the first and second oxide constriction layers.

3. The surface light emitting device according to claim 1, wherein a plurality of pairs of the first and second oxide constriction layers are present.

4. The surface-emitting device according to claim 3, wherein the at least one light-emitting layer is a plurality of light-emitting layers, the plurality of sets are stacked on top of each other and correspond individually to the plurality of light-emitting layers, and the corresponding light-emitting layer is disposed between the first and second oxide constriction layers of each set.

5. The surface light emitting device according to claim 4, further comprising a tunnel junction layer provided between two adjacent light emitting layers.

6. The surface light emitting device according to claim 4, wherein the plurality of pairs have the same oxidation constriction diameter of the first oxidation constriction layer and the same oxidation constriction diameter of the second oxidation constriction layer.

7. The surface light emitting device according to claim 4, wherein the plurality of pairs have a smaller oxidized constriction diameter of the second oxidized constriction layer in the pair closer to the light emitting surface.

8. The surface light emitting device according to claim 7, wherein the plurality of pairs have a smaller oxidized constriction diameter of the first oxidized constriction layer in the pair closer to the light emitting surface.

9. The surface light emitting device according to claim 7, wherein the plurality of sets have the same oxidized constriction diameter of the first oxidized constriction layer.

10. The surface light emitting device according to claim 4, wherein the plurality of pairs have a smaller oxidized constriction diameter of the first oxidized constriction layer in the pair closer to the light emitting surface.

11. The surface light emitting device according to claim 10, wherein the plurality of sets have the same oxidized constriction diameter of the second oxidized constriction layer.

12. A surface-emitting element as described in claim 4, wherein, in two adjacent groups among the plurality of groups, the oxidation constriction diameter of the first oxidation constriction layer of the group closer to the emission surface is the same as the oxidation constriction diameter of the second oxidation constriction layer of the group farther from the emission surface.

13. The surface light emitting device according to claim 1, wherein the second oxide constriction layer is thicker than the first oxide constriction layer.

14. A surface-emitting element as described in claim 1, wherein each of the first and second oxidized constriction layers has a non-oxidized region and an oxidized region surrounding the non-oxidized region, the non-oxidized regions of the first and second oxidized constriction layers both contain Al, and the non-oxidized region of the second oxidized constriction layer has a higher Al composition than the non-oxidized region of the first oxidized constriction layer.

15. The surface light emitting device according to claim 1, wherein a reflector is provided on one and / or the other side of the light emitting layer in a direction perpendicular to the surface.

16. The surface light emitting device according to claim 1, wherein the light emitting element section has a recessed portion that exposes at least the side surfaces of the plurality of oxidized constriction layers.

17. A surface light emitting device array in which a plurality of surface light emitting elements are arranged in an array, the surface light emitting element array comprising a light emitting element portion in which at least one light emitting layer and a plurality of oxidized constriction layers are stacked, the plurality of oxidized constriction layers including a first oxidized constriction layer and a second oxidized constriction layer that is closer to the emission surface than the first oxidized constriction layer and has a smaller oxidized constriction diameter than the first oxidized constriction layer.

18. An electronic device comprising a surface-emitting element having a light-emitting element section in which at least one light-emitting layer and a plurality of oxidized constriction layers are stacked, the plurality of oxidized constriction layers including: a first oxidized constriction layer; and a second oxidized constriction layer that is closer to the emission surface than the first oxidized constriction layer and has a smaller oxidized constriction diameter than the first oxidized constriction layer.

19. A method for manufacturing a surface-emitting device, comprising: a step of stacking at least a light-emitting layer and first and second oxidizable layers on a substrate to produce a laminate; a step of etching the laminate until at least the side surfaces of the first and second oxidizable layers are exposed; and a step of oxidizing each of the first and second oxidizable layers from the side surfaces, wherein the second oxidizable layer is closer to the emission surface than the first oxidizable layer, and in the oxidizing step, the oxidation rate of the second oxidizable layer is higher than the oxidation rate of the first oxidizable layer.

20. The method for manufacturing a surface light emitting device according to claim 19, wherein the light emitting surface is a surface of the laminate opposite to the substrate side or a surface of the laminate facing the substrate side.

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