Condition setting support method, storage medium, and condition setting support device

Abstract

This condition setting support method includes executing support processing that supports the setting of a condition when performing development processing, which includes the supply of a developer to a coating film formed on a surface of a substrate. The support processing includes: acquiring a plurality of data sets, wherein each data set includes sample values of a plurality of parameters that represent at least a part of the condition when performing the development processing, and actual measurement data of a line width distribution that represents variations in line width on the surface of the substrate after the development processing; generating a prediction formula for predicting the line width distribution on the basis of the plurality of data sets; acquiring a setting value of a variation range when performing prediction for each of the plurality of parameters; and calculating, on the basis of the prediction formula and the variation range, a recommended value of each of the plurality of parameters such that the line width distribution approaches a target distribution, and a prediction result of the line width distribution corresponding to the recommended value.

Description

Condition setting support method, storage medium, and condition setting support device

[0001] The present disclosure relates to a condition setting support method, a storage medium, and a condition setting support device.

[0002] Japanese Patent Application Laid-Open No. 2003-129999 discloses a substrate processing apparatus, a substrate processing method, a substrate processing system, and a method for generating learning data that can reduce the burden on workers.

[0003] Japanese Patent Application Laid-Open No. 2021-108367

[0004] The present disclosure provides a condition setting support method, a storage medium, and a condition setting support device that are useful for simplifying the work of setting conditions for development processing.

[0005] A condition setting support method according to an aspect of the present disclosure includes executing a support process for supporting setting of conditions for performing a development process including supplying a developer to a film formed on a surface of a substrate, the support process including: acquiring a plurality of data sets, each data set including sample values ​​of a plurality of parameters representing at least a portion of conditions for performing the development process and measured data of a line width distribution representing a variation in line width on the surface of the substrate after the development process; generating a prediction formula for predicting the line width distribution based on the plurality of data sets; acquiring setting values ​​of variation ranges for each of the plurality of parameters when making the prediction; and calculating, based on the prediction formula and the variation ranges, recommended values ​​for each of the plurality of parameters such that the line width distribution approaches a target distribution, and a predicted result of the line width distribution corresponding to the recommended values.

[0006] According to the present disclosure, there are provided a condition setting support method, a storage medium, and a condition setting support device that are useful for simplifying the work of setting conditions for development processing.

[0007] FIG. 1 is a plan view schematically illustrating an example of a substrate processing apparatus. FIG. 2 is a front view schematically illustrating an example of a substrate processing apparatus. FIG. 3 is a schematic view illustrating an example of an apparatus for performing a development process. FIG. 4 is a schematic view illustrating an example of a development nozzle. FIG. 5 is a flowchart showing an example of a development process. FIGS. 6(a), 6(b), 6(c), and 6(d) are schematic views illustrating an example of a development process. FIGS. 7(a), 7(b), and 7(c) are schematic views illustrating an example of a development process. FIG. 8 is a flowchart showing an example of a development process. FIG. 9 is a schematic view showing an example of the functional configuration of a setting support apparatus. FIG. 10 is a schematic view showing an example of the hardware configuration of the setting support apparatus. FIG. 11 is a flowchart showing an example of a setting support method. FIG. 12 is a diagram schematically illustrating an example of an image used to evaluate whether puddle formation is possible. FIGS. 13(a) and 13(b) are tables showing example sample conditions. FIG. 14 is a schematic view showing an example of a plurality of measurement points. Fig. 15 is a flowchart showing an example of a series of processes executed by the setting support device. Fig. 16 is a schematic diagram showing an example of a screen for inputting actual measurement data into the setting support device. Fig. 17 is a schematic diagram showing an example of a screen for inputting prediction conditions into the setting support device. Fig. 18 is a schematic diagram showing an example of a screen for displaying calculation results by the setting support device. Fig. 19 is a schematic diagram showing an example of a screen for displaying calculation results by the setting support device.

[0008] Hereinafter, a wafer processing system as a substrate processing apparatus according to the present embodiment will be described with reference to the drawings. In this specification, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0009] <Wafer Processing System> First, the configuration of a wafer processing system according to this embodiment will be described. Figures 1 and 2 are a plan view and a front view, respectively, that schematically show the outline of the configuration of wafer processing system 1. In this embodiment, the wafer processing system 1 will be described as an example of a photolithography processing system that performs a resist film forming process and a development process on a wafer W (substrate).

[0010] 1, the wafer processing system 1 includes a cassette station 2 into which a cassette C containing a plurality of wafers W is loaded and unloaded, and a processing station 3 equipped with a plurality of various processing devices that perform predetermined processing on the wafers W. The wafer processing system 1 has a configuration in which the cassette station 2, the processing station 3, and an interface station 4 that transfers the wafers W between them and an exposure device (not shown) adjacent to the opposite side of the processing station 3 are integrally connected. Note that, although two processing stations 3 are installed between the cassette station 2 and the interface station 4 as shown in FIG. 1, one processing station 3 or three or more processing stations may be installed.

[0011] The cassette station 2 is provided with a plurality of cassette mounting tables 21 and wafer transfer devices 22 and 23. The cassette station 2 transfers wafers W between the cassette C mounted on the mounting table 12 and the processing station 3 using the wafer transfer device 22 or 23. To this end, the wafer transfer devices 22 and 23 are each provided with drive mechanisms for the X direction, Y direction, vertical direction, and around the vertical axis (θ direction) as needed, and may also be provided with drive mechanisms for all directions. At least one of the wafer transfer devices 22 and 23 is capable of transferring wafers W between the cassette C and the processing station 3, and is also capable of transferring wafers W to and from the processing station 3. Note that the transfer of wafers W to and from the processing station 3 refers to, for example, transferring wafers W to and from a third block G3 equipped with a transfer device accessible by a wafer transfer device 33 in the processing station 3 (described later). The third block G3 may be provided with a plurality of transfer devices (not shown) arranged vertically.

[0012] The cassette station 2 may include an inspection device (not shown) for inspecting the wafer W at a position accessible to either the wafer transfer device 22 or 23 .

[0013] The processing station 3 includes multiple blocks, e.g., three blocks G1, G2, and G4 (first, second, and fourth blocks). As shown in FIG. 2, multiple layers 31 each including the first and second blocks G1 and G2 are stacked vertically. For example, the first block G1 is provided on the front side of the processing station 3 (the negative X-direction side in FIG. 1), and the second block G2 is provided on the rear side of the processing station 3 (the positive X-direction side in FIG. 1). The fourth block G4 is provided on the interface station 4 side of the processing station 3 (the positive Y-direction side in FIG. 1) or at a connection point with another adjacent processing station 3. The fourth block G4 may include multiple transfer devices arranged vertically. The aforementioned third block G3 may also be provided within the processing station 3.

[0014] The first block G1 is provided with a plurality of processing devices, such as a patterning film forming device and a development processing device, both of which are not shown. The patterning film forming device may include, for example, a resist film forming device and an anti-reflection film forming device. For example, a plurality of processing devices are arranged horizontally. The number, arrangement, and type of these processing devices can be selected arbitrarily.

[0015] In these patterning film forming apparatuses and developing treatment apparatuses, for example, a predetermined processing liquid or a predetermined gas is supplied onto the wafer W. In this manner, the patterning film forming apparatus forms a resist film used as a mask when forming a pattern on an underlying film, or forms an anti-reflective film for efficiently performing a light irradiation process, such as an exposure process. Meanwhile, in the developing treatment apparatus, a portion of the exposed resist film is removed to form a concave-convex shape as the mask. The first block G1 may include a developing unit U3 as an example of an apparatus for performing a developing process.

[0016] For example, the second block G2 is provided with vertically and horizontally aligned heat treatment devices (not shown) that perform heat treatments such as heating and cooling of the wafer W. The second block G2 also is provided with vertically (Z direction in FIG. 2) and horizontally aligned hydrophobization devices that perform hydrophobization treatment to improve the fixation of the resist liquid to the wafer W, and peripheral exposure devices that expose the peripheral portion of the wafer W, both of which are not shown. The number and arrangement of these heat treatment devices, hydrophobization treatment devices, and peripheral exposure devices can also be selected as desired.

[0017] 1, a wafer transfer area 32 is formed in an area sandwiched between the first block G1 and the second block G2 in a plan view. In the wafer transfer area 32, for example, a wafer transfer device 33 is disposed.

[0018] The wafer transfer device 33 has a transfer arm that is movable in, for example, the X direction, the Y direction, the θ direction, and the vertical direction. The wafer transfer device 33 moves within the wafer transfer area 32 and can transfer the wafer W to predetermined devices in the surrounding first block G1, second block G2, third block G3, and fourth block G4. When there are multiple processing stations 3 as shown in Figure 1, the wafer transfer device 33 provided in the processing station 3 located on the interface station 4 side can transfer the wafer W to predetermined devices in the first, second, and fourth blocks G1, G2, and G4, as well as the fifth block G5 described below.

[0019] A plurality of wafer transfer devices 33 are arranged, for example, one above the other. One wafer transfer device 33 can transfer wafers W to a predetermined device located at the height of the upper layers 31 among the multiple layers 31 stacked vertically (see FIG. 2 ). Another wafer transfer device 33 can transfer wafers W to a predetermined device located at the height of the multiple layers 31 located below the layers 31. A plurality of wafer transfer regions 32 are provided to enable such transfer of wafers W. Note that the number of wafer transfer devices 33 and the number of layers 31 corresponding to one wafer transfer device 33 can be selected arbitrarily, such as by providing a wafer transfer device 33 for each layer 31.

[0020] The wafer transfer area 32, the first block G1, or the second block G2 may also include a shuttle transfer device (not shown). The shuttle transfer device linearly transfers wafers W between a space adjacent to one side of the processing station 3 and another space adjacent to the opposite side.

[0021] The interface station 4 is provided with a fifth block G5 equipped with a plurality of transfer devices, and wafer transfer devices 41 and 42. The interface station 4 uses the wafer transfer device 41 or 42 to transfer the wafer W between the fifth block G5, where the wafer W is transferred by the wafer transfer device 33, and the exposure device. To this end, the wafer transfer devices 41 and 42 are each provided with drive mechanisms in the X direction, Y direction, up and down direction, and around the vertical axis (θ direction) as needed, and may also be provided with drive mechanisms in all directions. At least one of the wafer transfer devices 41 and 42 can support the wafer W and transfer the wafer W between the transfer device in the fifth block G5 and the exposure device.

[0022] A cleaning device for cleaning the surface of the wafer W and the aforementioned peripheral exposure device may be provided in the interface station 4 at a position accessible to either of the wafer transfer devices 41 and 42 .

[0023] The inspection device may be provided in the cassette station 2 as described above, but it may also be provided in the processing station 3 and the interface station 4 at a position accessible to any of the transport arms (33, 41, 42 in Figure 1 or Figure 2) provided inside each station.

[0024] The wafer processing system 1 described above is provided with a control device 100. The control device 100 is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of wafers W in the wafer processing system 1. The program storage unit also stores a program for controlling the operation of drive systems such as the various processing devices and transfer devices described above to realize wafer processing in the wafer processing system 1. The program may be recorded on a computer-readable storage medium H and installed into the control device 100 from the storage medium H.

[0025] The wafer processing system 1 may include a line width measuring device 49. The line width measuring device 49 measures the line width of the resist pattern on the surface of the wafer W after the development process has been performed. The line width measuring device 49 may measure the line width of the resist pattern in any manner. The line width measuring device 49 may be configured to measure the line width at each of a plurality of measurement points on the surface of the wafer W (e.g., a plurality of measurement points located at different positions in the radial direction of the wafer W). The line width measuring device 49 may measure the line width based on an image obtained by capturing an image of the surface of the wafer W after the development process.

[0026] The wafer processing system 1 may include a setting support device 200. The setting support device 200 may be a computer independent of the control device 100. Alternatively, the setting support device 200 may be communicably connected to the control device 100 via a wired, wireless, or communication network. Details of the setting support device 200 will be described later.

[0027] <Operation of Wafer Processing System> The wafer processing system 1 is configured as described above. Next, an example of wafer processing performed using the wafer processing system 1 configured as described above will be described.

[0028] First, a cassette C containing a plurality of wafers W is carried into the cassette station 2 of the wafer processing system 1 and placed on the cassette mounting table 21. Next, each wafer W in the cassette C is sequentially removed by the wafer transfer device 22 or 23 and transferred to the delivery device in the third block G3.

[0029] The wafer W transferred to the transfer device in the third block G3 is supported by the wafer transfer device 33 and transferred to the hydrophobization treatment device provided in the second block G2, where hydrophobization treatment is performed. Next, the wafer W is transferred by the wafer transfer device 33 to the resist film forming device, where a resist film is formed on the wafer W. The wafer W is then transferred to the heat treatment device, where it is pre-baked, and then transferred to the transfer device in the fifth block G5. Note that, when there are multiple processing stations 3 as shown in FIGS. 1 and 2, the wafer W is temporarily placed in the transfer device in the fourth block G4 before being transferred to the transfer device in the fifth block G5, and then transferred between the multiple wafer transfer devices 33. Furthermore, the wafer W may be transferred by the wafer transfer device 33 to the peripheral exposure device, where the peripheral portion of the wafer W is exposed to light, as necessary.

[0030] The wafer W transferred to the delivery device in the fifth block G5 is transferred to the exposure device by wafer transfer devices 41 and 42, and is subjected to exposure processing with a predetermined pattern. Note that the wafer W may be cleaned by a cleaning device before the exposure processing.

[0031] The exposed wafer W is transferred to a transfer device in the fifth block G5 by wafer transfer devices 41 and 42. Thereafter, the wafer W is transferred to a heat treatment device by wafer transfer device 33, where it is subjected to post-exposure baking.

[0032] The wafer W that has been subjected to post-exposure baking is transferred by the wafer transfer device 33 to a developing treatment device (e.g., developing unit U3) and developed. After development is completed, the wafer W is transferred by the wafer transfer device 33 to the heat treatment device 40 and subjected to post-baking.

[0033] Thereafter, the wafer W is transferred by the wafer transfer device 33 to the delivery device in the third block G3, and then transferred by the wafer transfer device 22 or 23 in the cassette station 2 to the cassette C on the predetermined cassette mounting table 21. In this way, a series of photolithography steps is completed.

[0034] It should be noted that the wafer processing system of the present disclosure is not limited to the configuration and operation described above. For example, in the above embodiment, the wafer W is transferred between the interface station 4 and the exposure apparatus, but it does not have to be directly connected to the exposure apparatus. In that case, for example, the wafer W is transferred from the cassette station 2 to the processing station 3, where it undergoes the necessary processing, and then transferred back to the cassette station 2 for removal to the outside. Furthermore, unnecessary processing equipment listed above may not be provided, or processing may not be performed in that equipment.

[0035] <Developing Unit and Development Process> Fig. 3 is a schematic diagram showing the developing unit U3 and the functional configuration of the control device 100. Fig. 4 is a schematic diagram showing a developing nozzle provided in the developing unit U3. The developing unit U3 performs a developing process including supplying a developer to a coating formed on the surface of the wafer W (hereinafter referred to as "surface Wa"). As shown in Fig. 3, the developing unit U3 includes, for example, a spin holder 50, a developer supply unit 60, a rinse liquid supply unit 70, and an imaging device 90.

[0036] The rotary holder 50 holds and rotates the wafer W. The rotary holder 50 includes, for example, a holder 52 and a rotation drive unit 54. The holder 52 supports the back surface of the wafer W with the front surface Wa of the wafer W facing upward, and holds the wafer W by vacuum suction or the like. The rotation drive unit 54 rotates the holder 52 around a vertical rotation axis Ax using a power source such as an electric motor. This causes the wafer W to rotate around the rotation axis Ax. The holder 52 may hold the wafer W so that the center of the wafer W substantially coincides with the rotation axis Ax.

[0037] The developer supply unit 60 supplies a developer to the surface Wa of the wafer W held in the holder 52. The developer is a processing liquid for removing a target portion of the resist film (coating) after exposure. The target portion of the resist film is a portion that is soluble in the developer after the exposure process. When the developer is a positive type, the portion exposed in the exposure process is soluble in the developer. When the developer is a negative type, the portion not exposed in the exposure process is soluble in the developer. A specific example of a positive type developer is an alkaline solution. A specific example of a negative type developer is an organic solvent. The developer supply unit 60 includes, for example, a nozzle 61, a supply pipe 67, a tank 62, a pump 63, a valve 64, and a nozzle driver 66.

[0038] The nozzle 61 discharges the developer toward the front surface Wa of the wafer W. As shown in FIG. 4 , the nozzle 61 includes one end face 61 a and a discharge port 61 b. The end face 61 a faces the front surface Wa of the wafer W held by the holder 52. The end face 61 a is the tip of the nozzle 61. The discharge port 61 b ​​is provided in the end face 61 a (opens at the end face 61 a). The nozzle 61 may have a circular end face 61 a, and the discharge port 61 b ​​may open at the center of the end face 61 a. As an example, the center of the end face 61 a substantially coincides with the center of the discharge port 61 b.

[0039] The area of ​​the end face 61a is smaller than the area of ​​the front surface Wa of the wafer W. The nozzle 61 may include a plurality of discharge ports 61b scattered across the end face 61a instead of one discharge port 61b. The shape (outline) of the discharge port 61b may be circular or elliptical, polygonal, or slit-shaped. The area (opening area) of the discharge port 61b may be approximately 0.3% to 5% of the area of ​​the end face 61a.

[0040] Returning to FIG. 3 , the nozzle 61 is connected to a tank 62 via a supply pipe 67. The tank 62 contains a developer. A pump 63 and a valve 64 are provided on the supply pipe 67. The pump 63 is, for example, a bellows pump, and pressure-feeds the developer from the tank 62 to the nozzle 61. The valve 64 is, for example, an air-operated valve, and adjusts the opening of the flow path in the supply pipe 67. By controlling the valve 64, it is possible to switch between a state in which the developer is ejected from the nozzle 61 and a state in which the developer is not ejected from the nozzle 61.

[0041] The nozzle driving unit 66 adjusts the position of the nozzle 61. For example, the nozzle driving unit 66 moves the nozzle 61 across above the wafer W with the end surface 61 a facing downward, thereby raising and lowering the nozzle 61. The nozzle driving unit 66 may have a mechanism that moves the nozzle 61 along the front surface Wa of the wafer W using a power source such as an electric motor, and a mechanism that raises and lowers the nozzle 61 using a power source such as an electric motor. When moving the nozzle 61 along the front surface Wa of the wafer W, the nozzle driving unit 66 moves the nozzle 61 along a path that passes through the rotation axis Ax of the wafer W. The nozzle driving unit 66 may move the nozzle 61 along a straight path.

[0042] The rinse liquid supply unit 70 supplies a rinse liquid to the front surface Wa of the wafer W held by the holder 52. The rinse liquid is used to wash away the developer. The rinse liquid may also be used as a pre-wet liquid supplied to the front surface Wa before the developer is supplied. The rinse liquid is, for example, pure water or deionized water (DIW). The rinse liquid supply unit 70 includes, for example, a nozzle 71, a supply pipe 77, a tank 72, a pump 73, a valve 74, and a nozzle driver 76.

[0043] The nozzle 71 ejects the rinse liquid toward the front surface Wa of the wafer W. The nozzle 71 is connected to a tank 72 via a supply pipe 77. The tank 72 stores the rinse liquid. A pump 73 and a valve 74 are provided on the supply pipe 77. The pump 73 is, for example, a bellows pump, and pressure-feeds the rinse liquid from the tank 72 to the nozzle 71. The valve 74 is, for example, an air-operated valve, and adjusts the opening of a flow path in the supply pipe 77. Controlling the valve 74 makes it possible to switch between a state in which the rinse liquid is ejected from the nozzle 71 and a state in which the rinse liquid is not ejected from the nozzle 71.

[0044] The nozzle driving unit 76 moves the nozzle 71 using a power source such as an electric motor. The nozzle driving unit 76 may move the nozzle 71 along the front surface Wa of the wafer W with the discharge port of the nozzle 71 facing downward.

[0045] The imaging device 90 is a device capable of capturing an image of the front surface Wa (e.g., the entire front surface Wa) of the wafer W held in the holder 52. The imaging device 90 has a camera that captures an image of an imaging range including the front surface Wa and generates image data. The imaging device 90 may capture video data as the image data by capturing an image of the imaging range. For example, the imaging device 90 captures an image while the development process is being performed by the development unit U3 in response to an instruction from the control device 100. Whether the development process is appropriate may be determined based on the image data generated by the imaging device 90.

[0046] The control device 100 has, as functional components (hereinafter referred to as "functional blocks"), for example, a development control unit 102, a condition storage unit 104, and an imaging control unit 106. The processes executed by these functional blocks correspond to the processes executed by the control device 100.

[0047] The development control unit 102 controls the development unit U3 to perform a development process on the resist film (coating) formed on the front surface Wa of the wafer W. The development control unit 102 executes the development process on the wafer W by the development unit U3 in accordance with predetermined conditions (hereinafter referred to as "control conditions"). One development process includes multiple processing steps (unit processes). The number of processing steps included in the development process may vary depending on the film thickness of the coating on the front surface Wa.

[0048] The number of processing steps in the development process performed when the coating thickness is in the first range may be fewer than the number of processing steps in the development process (second development process) performed when the coating (second coating) thickness is in a second range that is larger than the first range. Hereinafter, a coating having a thickness in the first range will be referred to as a "thin film," and a coating having a thickness in the second range will be referred to as a "thick film." In one example, the thickness of a thin film is less than 5 μm, and the thickness of a thick film is 5 μm to 30 μm.

[0049] The condition storage unit 104 stores the control conditions. The condition storage unit 104 stores, as control conditions, a plurality of parameters that define conditions for a plurality of processing steps included in the development process. The operation of the apparatus (developing unit U3) in each processing step is defined by the plurality of parameters. The operation of the apparatus also includes maintaining the apparatus in a certain state. The condition storage unit 104 may store values ​​of a plurality of parameters for a thin film and values ​​of a plurality of parameters for a thick film. Specific examples of the plurality of parameters will be described later.

[0050] The imaging control unit 106 controls the imaging device 90 to capture an image of the front surface Wa of the wafer W while the development control unit 102 is causing the development unit U3 to perform the development process. The development process includes, for example, a processing step of maintaining a puddle of developer on the front surface Wa. The imaging control unit 106 may cause the imaging device 90 to capture an image so as to monitor the state of the puddle.

[0051] 5 shows an example of a series of processes executed by the control device 100 in a thin film development process as a process flow S1. In the process flow S1, the control device 100 first executes step S11 with the wafer W to be processed placed on the spin holder 50. In step S11, for example, the development control unit 102 causes the development unit U3 to execute a pre-wet process as a process step. While the wafer W is being rotated by the spin holder 50, the development control unit 102 supplies a rinse liquid to the front surface Wa of the wafer W using the rinse liquid supply unit 70.

[0052] 6A shows a schematic example of the state during the pre-wet process. In FIG. 6A, the rinse liquid being discharged from the nozzle 71 and the rinse liquid after being supplied to the surface Wa are indicated by "RF." The multiple parameters stored in the condition storage unit 104 may include a parameter that defines the discharge flow rate of the rinse liquid in the pre-wet process and a parameter that defines the discharge time of the rinse liquid.

[0053] Next, the control device 100 executes step S12. In step S12, for example, the development control unit 102 causes the developing unit U3 to execute a center discharge process as a processing step. The development control unit 102 may move the nozzle 61 using the nozzle drive unit 66 so that the nozzle 61 is positioned facing the center of the front surface Wa of the wafer W. The development control unit 102 may then cause the developer supply unit 60 to discharge the developer from the nozzle 61 positioned facing the center of the front surface Wa of the wafer W. The nozzle 61 facing the center of the front surface Wa means that any part of the nozzle 61 overlaps with the center of the front surface Wa as viewed from the direction along the rotation axis Ax. The development control unit 102 may discharge the developer from the nozzle 61 toward the center of the wafer W while rotating the wafer W at a constant rotation speed using the rotation holder 50. The multiple parameters stored in the condition memory unit 104 may include a parameter specifying the discharge flow rate of the developer in the center discharge process of step S12 and a parameter specifying the discharge time of the developer.

[0054] Next, the control device 100 executes step S13. In step S13, for example, the development control unit 102 causes the development unit U3 to execute a scan-out process (first step) as a processing step. The development control unit 102 may cause the nozzle 61, which is in contact with the developer on the front surface Wa of the wafer W, to eject the developer from the nozzle 61 while moving the nozzle 61 from the center of the wafer W toward the outer periphery. In one example, while the rotation holding unit 50 is rotating the wafer W, the development control unit 102 causes the nozzle 61, whose end surface 61 a is in contact with the developer on the front surface Wa, to move from the center of the wafer W to the outer edge of the wafer W by the nozzle driving unit 66 while ejecting the developer from the nozzle 61 toward the front surface Wa of the wafer W.

[0055] 6B shows a schematic example of the scan-out process in progress. In FIG. 6B, the developer being discharged from the nozzle 61 and the developer after being supplied to the surface Wa are indicated by "DF." The multiple parameters stored in the condition storage unit 104 may include a parameter that defines the discharge flow rate of the developer in the scan-out process and a parameter that defines the movement speed (scan-out speed) of the nozzle 61.

[0056] Next, the control device 100 executes step S14. In step S14, for example, the development control unit 102 causes the developing unit U3 to execute a scan-in process (second step) as a processing step. The development control unit 102 may cause the nozzle 61, which is in contact with the developer on the front surface Wa of the wafer W, to eject the developer from the nozzle 61 while moving the nozzle 61 from the outer periphery toward the center of the wafer W. In one example, while the rotation holding unit 50 is rotating the wafer W, the development control unit 102 causes the nozzle 61, whose end surface 61 a is in contact with the developer on the front surface Wa, to move from the outer edge of the wafer W to the center of the wafer W by the nozzle driving unit 66 while ejecting the developer from the nozzle 61 toward the front surface Wa of the wafer W.

[0057] 6C shows a schematic example of the scan-in process being performed. The parameters stored in the condition storage unit 104 may include a parameter that defines the discharge flow rate of the developer in the scan-in process and a parameter that defines the movement speed (scan-in speed) of the nozzle 61.

[0058] Next, the control device 100 executes step S15. In step S15, for example, the development control unit 102 causes the development unit U3 to execute a center discharge process as a processing step. In the center discharge process of step S15, the development control unit 102 may discharge the developer from the nozzle 61 arranged to face the center of the front surface Wa of the wafer W. The development control unit 102 may discharge the developer from the nozzle 61 toward the center of the wafer W while rotating the wafer W at a constant rotational speed using the rotation holding unit 50.

[0059] 6D shows a schematic example of the state during execution of the center discharge process in step S15. The multiple parameters stored in the condition storage unit 104 may include a parameter that defines the discharge flow rate of the developer in the center discharge process of step S15 and a parameter that defines the discharge time of the developer. The discharge time of the developer when executing the center discharge process of step S15 corresponds to the execution time of the center discharge time of step S15.

[0060] Next, the control device 100 executes step S16. In step S16, for example, the development control unit 102 causes the development unit U3 to execute a scan-out process as a processing step. The development control unit 102 may cause the development unit U3 to execute the scan-out process of step S16, similar to the scan-out process of step S13. FIG. 7A illustrates an example of the scan-out process of step S16. The multiple parameters stored in the condition storage unit 104 may include a parameter that specifies the discharge flow rate of the developer in the scan-out process of step S16 and a parameter that specifies the movement speed of the nozzle 61.

[0061] Next, the control device 100 executes step S17. In step S17, for example, the development control unit 102 causes the developing unit U3 to execute an outer periphery discharge process (fourth step) as a processing step. In the outer periphery discharge process, the development control unit 102 causes the developing unit U3 to supply the developer to an outer periphery region on the front surface Wa of the wafer W, but does not supply the developer to an area on the front surface Wa of the wafer W that is inside the outer periphery region. For example, while the wafer W is being rotated by the rotary holder 50, the development control unit 102 supplies the developer from the nozzle 61 to the outer periphery region in a state in which the nozzle 61 is positioned so that any part of the nozzle 61 overlaps the outer edge of the front surface Wa when viewed from the direction along the rotation axis Ax.

[0062] 7B shows a schematic example of the outer periphery discharge process being performed. The parameters stored in the condition storage unit 104 may include a parameter that specifies the discharge flow rate of the developer in the outer periphery discharge process and a parameter that specifies the discharge time of the developer. The discharge time of the developer when performing the outer periphery discharge process corresponds to the execution time of the outer periphery discharge process.

[0063] Next, the control device 100 executes step S18. In step S18, for example, the development control unit 102 causes the development unit U3 to execute a puddle maintenance process (third step) as a processing step. In the puddle maintenance process, the development control unit 102 causes a puddle of developer to be maintained on the front surface Wa of the wafer W. The puddle of developer is a liquid film (puddle) of developer on the front surface Wa. In one example, the development control unit 102 maintains a state in which the rotation of the wafer W by the rotation holder 50 is stopped.

[0064] 7C shows a schematic example of the state during execution of the paddle maintenance process. The multiple parameters stored in the condition storage unit 104 may include a parameter that specifies the execution time of the paddle maintenance process (e.g., the time for which the rotation of the wafer W is maintained stopped).

[0065] This completes the series of processing steps in the thin film development process. After this series of processing steps, the control device 100 may cause the rinse liquid supply unit 70 to supply a rinse liquid from the nozzle 71 so as to remove the developer from the front surface Wa. Then, the control device 100 may cause the rotation holder 50 to rotate the wafer W so as to remove the rinse liquid from the front surface Wa (so as to dry the front surface Wa).

[0066] 8 shows an example of a series of processes executed by the control device 100 in a thick film development process as process flow S2. In process flow S2, the control device 100 executes steps S21 to S23, similar to steps S11 to S13 in process flow S1. After executing steps S21 to S23, the control device 100 executes step S24, and then executes step S25, similar to step S14 in process flow S1.

[0067] In step S24, for example, the development control unit 102 causes the developing unit U3 to execute an outer periphery discharging process as a processing step. In one example, in the outer periphery discharging process of step S24, the development control unit 102 causes the developing unit U3 to supply the developer to an outer periphery region on the front surface Wa of the wafer W, but does not supply the developer to a region on the front surface Wa of the wafer W that is inside the outer periphery region. For example, when the wafer W is being rotated by the rotary holder 50, the development control unit 102 supplies the developer from the nozzle 61 to the outer periphery region in a state in which the nozzle 61 is positioned so that any part of the nozzle 61 overlaps the outer edge of the front surface Wa when viewed from the direction along the rotation axis Ax.

[0068] After executing step S25, the control device 100 executes steps S26 and S27. In the process flow S2, steps S26 and S27 are executed, unlike step S15 in the process flow S1.

[0069] In step S26, for example, the development control unit 102 causes the developing unit U3 to execute a center discharge process (second step) at a first rotational speed ω1 as a processing step. In step S26, the development control unit 102 may discharge the developer from the nozzle 61 arranged to face the center of the front surface Wa of the wafer W while rotating the wafer W at the first rotational speed ω1 using the rotation holding unit 50. The multiple parameters stored in the condition storage unit 104 may include a parameter that specifies the discharge flow rate of the developer in the center discharge process at the first rotational speed ω1 and a parameter that specifies the discharge time of the developer. The discharge time of the developer in the center discharge process of step S26 corresponds to the execution time of the center discharge process of step S26.

[0070] In step S27, for example, the development control unit 102 may cause the development unit U3 to perform a center discharge process at a second rotation speed ω2 that is lower than the first rotation speed ω1 as a processing step. In step S27, the development control unit 102 may cause the nozzle 61, which is arranged to face the center of the front surface Wa of the wafer W, to discharge the developer while rotating the wafer W at the second rotation speed ω2 using the rotation holding unit 50. The execution time of step S27 may be shorter than the execution time of step S26.

[0071] After steps S26 and S27 are performed, the control device 100 performs steps S28 to S30, similar to steps S16 to S18. This completes the series of processing steps in the thick-film development process. After this series of processing steps, the control device 100 may cause the rinse liquid supply unit 70 to supply a rinse liquid from the nozzle 71 so as to remove the developer on the front surface Wa. The control device 100 may then rotate the wafer W using the spin holder 50 so as to remove the rinse liquid from the front surface Wa (so as to dry the front surface Wa).

[0072] The control device 100 may cause the developing unit U3 to perform either a thin-film development process or a thick-film development process in response to instructions input in advance by an operator. As with the process flow S1, the various conditions for steps S21 to S23, S25, and S28 to S30 in the thick-film development process may be defined by multiple parameters stored in the condition storage unit 104. For example, with respect to the outer periphery discharge process (first step) in step S29, the multiple parameters may include a parameter defining the discharge flow rate of the developer and a parameter defining the discharge time of the developer. Furthermore, with respect to the paddle maintenance process (third step) in step S30, the multiple parameters may include a parameter defining the execution time of the paddle maintenance process (e.g., the time for which the rotation of the wafer W is maintained stopped).

[0073] <Setting Support Device> Figure 9 shows a schematic diagram of an example of a setting support device 200. The setting support device 200 (condition setting support device) is a device that supports the setting of control conditions when performing a development process, including supplying a developer to a coating formed on the surface Wa of the wafer W. The line width distribution of the resist pattern formed on the surface Wa after the development process varies depending on the values ​​of multiple parameters included in the control conditions. The line width distribution is a distribution (profile) that indicates the variation in line width at multiple measurement positions on the surface Wa. For each of the development processes for thin films and thick films, reference values ​​of multiple parameters may be preset in the condition storage unit 104 of the control device 100.

[0074] An operator or the like of the wafer processing system 1 may use the setting support device 200 to set the multiple parameters stored in the condition storage unit 104. In setting the multiple parameters, values ​​of the multiple parameters are set. Setting the multiple parameters may include changing the set values ​​of the parameters from their reference values ​​and maintaining the set values ​​of the parameters at their reference values.

[0075] The setting support device 200 is configured by one or more computers (for example, one computer). The computer that configures the setting support device 200 may be a personal computer, a tablet computer (tablet terminal), a smartphone, a workstation, a server computer, or a general-purpose computer.

[0076] The setting assistance device 200 includes, for example, a computer main body 202, an input device 204, and a monitor 206. The computer main body 202 is a device (computer main body) that executes the main functions of the computer that constitutes the setting assistance device 200. The input device 204 is a device for inputting information to the computer main body 202. The input device 204 may be any device that can input desired information to the computer main body 202, and specific examples include operation interfaces such as a keypad, a mouse, and an operation controller.

[0077] The monitor 206 is a device for displaying information output from the computer main body 202. The monitor 206 may be any device capable of displaying graphics, a specific example of which is a liquid crystal panel. The input device 204 and the monitor 206 may be integrated as a touch panel. The computer main body 202, the input device 204, and the monitor 206 may be integrated, as in a tablet computer. In one example, the setting assistance device 200 is configured by installing an application for assisting in setting conditions for development processing on a personal computer. This application may be constructed using any software.

[0078] The setting support device 200 may execute processing to support the setting of at least some of the multiple parameters stored in the condition storage unit 104 of the control device 100. Hereinafter, the parameters for which setting support is provided will be referred to as "target parameters." The setting support device 200 may set two or more target parameters. The two or more target parameters are multiple parameters that represent at least some of the conditions for performing development processing.

[0079] Two or more target parameters may be different between the thick film development process and the thin film development process. Two or more target parameters being different from each other means that the type of at least one of the two or more target parameters on one side is different from the type of each of the two or more target parameters on the other side. Depending on the selection of the user of the setting support device 200, the setting support device 200 may execute either a process of supporting the setting of two or more target parameters in the thin film development process or a process of supporting the setting of two or more target parameters in the thick film development process.

[0080] In one example, the two or more target parameters in the thin film development process include the movement speed of the nozzle 61 in the scan-out process, the movement speed of the nozzle 61 in the scan-in process, the execution time of the paddle maintenance process, and the execution time of the outer periphery discharge process. Also, the two or more target parameters in the thick film development process include the execution time of the outer periphery discharge process, the execution time of the center discharge time (the center discharge process at the first rotation speed ω1), and the execution time of the paddle maintenance process.

[0081] The setting support device 200 has, as functional blocks, for example, a film type selection unit 214, a first support processing execution unit 220 (support processing execution unit), and a second support processing execution unit 230 (support processing execution unit). The processing executed by these functional blocks corresponds to the processing executed by the setting support device 200.

[0082] The film type selection unit 214 selects whether to execute a process to assist in setting target parameters for a thin film or a process to assist in setting target parameters for a thick film, based on a user instruction input by the user. The film type selection unit 214 selects which process to execute, for example, in accordance with a user input (user instruction) to a mode selection screen displayed on the monitor 206. Hereinafter, the process to assist in setting target parameters for a thin film will be referred to as a "support process for a thin film," and the process to assist in setting target parameters for a thick film will be referred to as a "support process for a thick film."

[0083] The first support processing execution unit 220 executes the thin film support processing when the execution of the thin film support processing is selected by the user. The first support processing execution unit 220 has, for example, as functional blocks, an input data acquisition unit 222, a prediction formula generation unit 224, a prediction calculation unit 226, and a result output unit 228. The processing executed by these functional blocks corresponds to the processing executed by the first support processing execution unit 220 (the setting support device 200).

[0084] The input data acquisition unit 222 acquires multiple data sets as input data from a user of the setting support device 200. Each of the multiple data sets (each data set) includes sample values ​​of two or more target parameters for thin films and measured data of line width distribution representing variations in line width on the front surface Wa of the wafer W after a thin film development process. In each data set, the sample values ​​of the two or more target parameters are associated with the measured data of line width distribution. The user may input the multiple data sets into the setting support device 200 while also using an existing application installed on a computer that constitutes the setting support device 200. The input data acquisition unit 222 acquires a setting value of the variation range when making a prediction for each of the two or more target parameters for thin films.

[0085] The prediction formula generator 224 generates a prediction formula for predicting line width distribution based on multiple data sets acquired by the input data acquirer 222. The prediction formula is generated so that a predicted result of line width distribution can be calculated for, for example, two or more input target parameters. As part of the prediction formula, or in the process of constructing the prediction formula, a distribution (line width distribution) representing line width fluctuations at multiple different measurement positions (measurement points) along the radial direction of the front surface Wa of the wafer W may be approximated by Zernike polynomials. An example of the prediction formula will be described later.

[0086] The prediction calculation unit 226 calculates recommended values ​​for each of two or more target parameters so that the line width distribution approaches a target distribution, and a predicted result of the line width distribution corresponding to the recommended values, based on the prediction formula generated by the prediction formula generation unit 224 and the setting value of the variation range acquired by the input data acquisition unit 222. The target distribution regarding the line width distribution includes not only a distribution having a specific shape, but also setting a target of uniform line widths. Setting a target of uniform line widths means that the target distribution is a distribution having the same arbitrary line width at each of multiple measurement positions on the surface Wa.

[0087] The result output unit 228 outputs the calculation results by the prediction calculation unit 226. The result output unit 228 outputs, for example, the recommended values ​​for each of the two or more target parameters calculated by the prediction calculation unit 226 and the prediction results of the line width distribution corresponding to the recommended values ​​to the monitor 206. The result output unit 228 may display the calculation results by the prediction calculation unit 226 on the monitor 206 while also using an existing application installed on the computer that constitutes the setting assistance device 200. Alternatively, the result output unit 228 may generate data indicating the calculation results by the prediction calculation unit 226 in a file format that can be opened using the application.

[0088] The second support processing execution unit 230 executes the support processing for thick films (second support processing) when the execution of the support processing for thick films is selected by the user. The second support processing execution unit 230 has, for example, as functional blocks, an input data acquisition unit 232, a prediction formula generation unit 234, a prediction calculation unit 236, and a result output unit 238. The processing executed by these functional blocks corresponds to the processing executed by the second support processing execution unit 230 (the setting support device 200).

[0089] The input data acquisition unit 232 executes processing corresponding to the processing by the input data acquisition unit 222, except that the target parameters are target parameters for a thick film. The prediction formula generation unit 234 executes processing corresponding to the processing by the prediction formula generation unit 224, except that the target parameters are target parameters for a thick film. The prediction calculation unit 236 executes processing corresponding to the processing by the prediction calculation unit 226, except that the target parameters are target parameters for a thick film. The result output unit 238 executes processing corresponding to the processing by the result output unit 228, except that the output target is the calculation result by the prediction calculation unit 236.

[0090] 10 schematically shows the hardware configuration of the setting assistance device 200. The computer main body 202 of the setting assistance device 200 includes, for example, a circuit 250. The circuit 250 has a processor 252, a memory 254, a storage 256, an input / output port 258, and a timer 259. The storage 256 is configured with one or more non-volatile memory devices such as a flash memory or a hard disk. The storage 256 stores programs for configuring each of the functional blocks of the computer main body 202 described above. The storage 256 stores an assistance program for causing the computer to execute at least one of assistance processing for thick films and assistance processing for thin films.

[0091] The memory 254 is composed of one or more volatile memory devices such as a random access memory. The memory 254 temporarily stores a program loaded from the storage 256. The processor 252 is composed of one or more arithmetic devices such as a CPU (Central Processing Unit) or a GPU (Graphics Processing Unit). The processor 252 configures each functional block of the setting assistance device 200 by executing a program (the assistance program) loaded into the memory 254. The results of calculations by the processor 252 are temporarily stored in the memory 254. The input / output port 258 inputs and outputs information between the input device 204, the monitor 206, etc. in response to a request from the processor 252. The timer 259 measures elapsed time by, for example, counting reference pulses at a fixed interval.

[0092] The assistance program may be provided by being fixedly recorded on a tangible recording medium such as a CD-ROM, DVD-ROM, or semiconductor memory. Alternatively, the assistance program may be provided via a communication network as a data signal superimposed on a carrier wave. The hardware configuration of the setting assistance device 200 is not necessarily limited to one in which each functional block is configured by a program. For example, each functional block of the setting assistance device 200 may be configured by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) that integrates such a dedicated logic circuit. The setting assistance device 200 may also be configured by multiple computers connected to each other so that they can communicate with each other.

[0093] The setting assistance device 200 may be a server computer, and may be connected to a user terminal via a communication network such as the Internet. The setting assistance device 200 may receive information input from the user terminal via the communication network, and output the calculation results to the user terminal via the communication network (for example, display them on a monitor of the user terminal).

[0094] <Adjustment of Control Conditions> In the wafer processing system 1, adjustment of the control conditions for the development process is performed before the development process described above is performed. The adjustment of the control conditions includes adjustment of two or more target parameters. Parameters other than the two or more target parameters may also be adjusted. The adjustment of the control conditions may be performed before the first development process is performed after installation of the wafer processing system 1, or before restarting the wafer processing system 1 after maintenance. In the stage of adjusting the control conditions (hereinafter referred to as the "adjustment stage"), the setting support device 200 is used to adjust the two or more target parameters.

[0095] In the support method (condition setting support method) executed using the setting support device 200, either support processing for thick films or support processing for thin films, or both support processing for thick films and support processing for thin films, is executed. Hereinafter, when the support processing for thick films and support processing for thin films are collectively referred to, they will simply be referred to as "support processing." "Support processing" means either support processing for thick films or support processing for thin films, or both support processing for thick films and support processing for thin films.

[0096] The assistance process may include acquiring a plurality of data sets, each including at least sample values ​​of two or more target parameters and actual measurement data of line width distribution on the front surface Wa of the wafer W after a development process is performed with the target parameters set to the sample values. The assistance process may further include generating a prediction formula for predicting the line width distribution based on the plurality of data sets, acquiring setting values ​​for a variation range for each of the two or more target parameters when making the prediction, and calculating, based on the prediction formula and the variation range, recommended values ​​for each of the two or more target parameters that will bring the line width distribution closer to a target distribution, and a predicted result of the line width distribution corresponding to the recommended values.

[0097] In calculating the recommended values ​​for each of the two or more target parameters, the recommended values ​​for each of the two or more target parameters may be calculated by evaluating an index value representing line width uniformity from a predicted result of the line width distribution using the prediction formula when the two or more parameters are varied within the above-mentioned variation range. The above support method may further include evaluating whether a puddle of developer is appropriately formed on the front surface Wa of the wafer W during the development process before performing one of the support process for thick films and the support process for thin films, or both the support process for thick films and the support process for thin films. Specific examples of processes performed in the above-mentioned adjustment stage will be described below with reference to FIGS.

[0098] 11 shows a process flow (procedure) executed in the adjustment stage. In the adjustment stage, step S51 is executed first. In step S51, for example, the imaging control unit 106 of the control device 100 causes the imaging device 90 to capture an image while the development process is being performed in the development unit U3, and acquires video data from the imaging device 90. The video data includes an image captured while a puddle of developer is maintained on the surface Wa. Multiple parameters in the control conditions for acquiring the video data may be set to reference values.

[0099] Next, step S52 is executed. In step S52, for example, the control device 100 evaluates whether a puddle of developer is appropriately formed on the surface Wa of the wafer W during the development process. FIG. 12 schematically shows an image PI (still image) in one frame of video data obtained from the imaging device 90. For example, if the puddle of developer formed on the surface Wa (the portion indicated by "DF") is appropriate, the presence of developer is maintained over the entire surface Wa of the wafer W. On the other hand, if a portion of the surface Wa is devoid of developer, as indicated by "d" in FIG. 12, the puddle of developer is no longer appropriate.

[0100] The control device 100 may detect an improper state, such as a region without developer on the surface Wa, based on the results of comparing, for example, reference video data obtained when a puddle of developer is normally formed with the video data obtained in step S51. The control device 100 may determine that the puddle of developer is appropriate when no improper state is detected, and may determine that the puddle of developer is inappropriate when an improper state is detected. The control device 100 may have a functional block that executes a process for evaluating whether a puddle of developer is appropriately formed on the surface Wa of the wafer W during the development process. Instead of the control device 100, the setting support device 200 may have a functional block that executes a process for evaluating whether a puddle of developer is appropriately formed on the surface Wa of the wafer W during the development process.

[0101] If it is determined in step S52 that the puddle of developer is not properly formed (step S52: NO), step S53 is executed. In step S53, for example, an operator of the wafer processing system 1 adjusts the plurality of parameters stored in the condition storage unit 104. In step S53, parameters other than the target parameter among the plurality of parameters stored in the condition storage unit 104 may be adjusted. For example, a setting value of a parameter that defines the movement speed of the nozzle 61 in a second scan-out process executed after the center discharge process may be adjusted. When determining conditions for a thin-film development process, when step S53 is executed, the setting value of a parameter for the second scan-out process may be changed to the reference value of the corresponding parameter for a thick-film development process.

[0102] Next, step S54 is executed. In step S54, for example, based on an operation by an operator, the control device 100 causes the developing unit U3 to create multiple samples, and then acquires measured data of the line width distribution of each sample using the line width measuring device 49. The multiple samples may be created by performing a development process on wafers of the same type as the wafers W manufactured by the wafer processing system 1 and shipped as products.

[0103] For each of a plurality of samples, sample values ​​of two or more target parameters may be determined in advance by experimental design. Fig. 13( a) illustrates sample values ​​of target parameters for each sample produced when setting two or more target parameters in a thin-film development process. In the example shown in Fig. 13( a), six types of samples, A to F, are produced. At least some of the sample values ​​of the two or more target parameters differ between one sample and another sample.

[0104] In the table shown in FIG. 13A, "scan-out speed" represents the movement speed of the nozzle 61 during the scan-out process, and "scan-in speed" represents the movement speed of the nozzle 61 during the scan-in process. "Paddle maintenance time" represents the execution time of the paddle maintenance process, and "periphery development time" represents the execution time of the peripheral ejection process. For example, when producing sample A, the movement speed [m / s] of the nozzle 61 during the scan-out process is set to 200, and the movement speed [m / s] of the nozzle 61 during the scan-in process is also set to 200. Furthermore, the execution time [seconds] of the paddle maintenance process is set to 20, and the execution time [seconds] of the peripheral ejection time is set to 20.

[0105] FIG. 13(b) illustrates sample values ​​of target parameters for each sample created when setting two or more target parameters in a thick-film development process. In the example shown in FIG. 13(b), six types of samples, A to F, are created. Similar to the table shown in FIG. 13(a), at least some sample values ​​of two or more target parameters differ between one sample and another sample. In the table shown in FIG. 13(b), "center ejection time" represents the execution time of the center ejection time at the first rotation speed ω1. In FIGS. 13(a) and 13(b), sample values ​​for samples E and F are omitted. The setting support device 200 may present a user, such as an operator, with sample values ​​of target parameters for each sample created when setting two or more target parameters.

[0106] The measured data of the line width distribution is, for example, data obtained by measuring the line width distribution along a measurement line L passing through the center CP of a circular wafer W, as shown in FIG. 14 . The measurement line L may be a line perpendicular to a line passing through the center CP and a reference position (e.g., the position of the notch N) in the circumferential direction around the center CP of the wafer W. The measured data of the line width distribution along the measurement line L may be obtained by the line width measuring device 49 measuring the line widths at a plurality of measurement positions P (measurement points) set on the measurement line L. The plurality of measurement positions P may include the center CP of the wafer W, or may be set to be arranged at equal intervals on the measurement line L. Note that the line width distribution is not limited to the distribution along the measurement line L, and may also be obtained by measuring the line widths at two or more locations on the surface Wa that are different from each other.

[0107] After executing step S54, the user of the setting assistance device 200 grasps the sample values ​​of the two or more target parameters for each sample and the measured line width distribution data associated with the combination of the sample values. After executing step S54, step S60 is executed. In step S60, for example, the setting assistance device 200 executes a setting assistance process. Fig. 15 shows a series of processes executed by the setting assistance device 200 in the setting assistance process.

[0108] In the setting support process of step S60, the setting support device 200 first executes step S61. In step S61, for example, the film type selection unit 214 of the setting support device 200 selects whether the target of condition setting support is two or more target parameters in a development process for a thin film or two or more target parameters in a development process for a thick film. The film type selection unit 214 may select, based on a user input, whether the target of condition setting support is a target parameter for a thin film or a target parameter for a thick film.

[0109] When two or more target parameters in a thin film development process are selected as targets for setting support, the setting support device 200 executes a series of processes in steps S71 to S75. When two or more target parameters in a thick film development process are selected as targets for setting support, the setting support device 200 executes a series of processes in steps S81 to S85.

[0110] In step S71, for example, the input data acquisition unit 222 of the first support process execution unit 220 acquires the plurality of data sets. In each of the plurality of data sets, sample values ​​of two or more target parameters are associated with measured data of line width distribution. Fig. 16 illustrates an example of a state in which a user inputs measured data of line width distribution into an input screen displayed on the monitor 206 or into a file of an existing application. Although omitted from Fig. 16, the user may be able to input sample values ​​of two or more target parameters for each sample on an input screen or the like displayed on the monitor 206.

[0111] In step S72, for example, the prediction formula generator 224 of the first support process executing unit 220 generates a prediction formula for predicting a line width distribution according to two or more target parameters related to the thin film development process, based on the multiple data sets obtained in step S71. The prediction formula may be any formula as long as it can calculate a predicted result of the line width distribution from any value (combination) of two or more target parameters, but an example of the prediction formula will be described below.

[0112] The prediction formula generator 224 generates a prediction formula after, for example, approximating the line width distribution to the coefficients of a Zernike polynomial. Here, a brief explanation of Zernike polynomials will be given. Zernike polynomials are complex functions on a unit circle with a radius of 1 that are often used in the field of optics (in practice, they are used as real functions), and have polar coordinate arguments (r, θ). In the field of optics, Zernike polynomials are primarily used to analyze the aberration components of lenses, and by decomposing wavefront aberrations using Zernike polynomials, it is possible to know aberration components based on the shape of each independent wavefront, for example, a mountain-shaped, saddle-shaped, etc.

[0113] In the present disclosure, linewidth values ​​at multiple points on the surface Wa of the wafer W are indicated in the radial direction of the wafer W, and these linewidth value points are connected by a smoothly curved surface, so that the in-plane distribution of linewidths on the surface Wa of the wafer W can be captured as a wavefront that undulates up and down. Using Zernike polynomials, the in-plane linewidth distribution of the wafer W can be decomposed into multiple types of annular in-plane trend components Zi, including convexly or concavely curved components. The magnitude of each in-plane trend component Zi can be expressed by a Zernike coefficient.

[0114] Each in-plane tendency component Zi is also called a Zernike term, and is specifically expressed by the following equation using polar coordinate arguments (r, θ). In this disclosure, the Zernike terms are described in a notational order based on fringes. Z1(1) Z2(r cos θ) Z3(r sin θ) Z4(2r ２ -1) Z5 (r ２ ・cos2θ) Z6(r ２ ・sin2θ) Z7((3r ３ -2r)・cosθ) Z8((3r ３ -2r)・sinθ) Z9(6r ４ -6r ２ +1) ... Z16 (20r ６ -30r ４ +12r ２ +1) ...

[0115] The prediction formula generator 224 may create a prediction formula by, for example, specifying, from among the multiple coefficients included in the Zernike polynomial, a coefficient relating to the line width (average value of line width within the surface) over the entire surface of the wafer W, and one or more coefficients relating to concentric curved components. Of the Zernike coefficients, coefficients relating to four types of Z1, Z4, Z9, and Z16 may be used. The coefficient relating to Z1 corresponds to the average value of line width within the surface of the wafer W (Z-direction deviation component). Z4, Z9, and Z16 are all concentric curved components, and each indicates a different unevenness. Furthermore, when the above four types of coefficients are used, a zeroth-order term (constant term), a second-order term (r ２ ), quartic (r ４ ), and sixth order (r ６) terms will be included.

[0116] The line width distribution includes line width values ​​at a plurality of measurement points along the radial direction of the wafer W. Therefore, by expressing the line width distribution within the wafer W surface obtained from the line width values ​​at each point using Zernike polynomials, it becomes possible to describe the line width distribution using a combination of four feature quantities (Zernike coefficients). Note that when approximating using Zernike polynomials, the least squares method can be used. As a result of the approximation, coefficients related to Z1, Z4, Z9, and Z16 are obtained.

[0117] In one example, the prediction formula generator 224 approximates a distribution representing linewidth variations at multiple measurement points with a Zernike polynomial based on the measured linewidth distribution data obtained in step S71, thereby determining multiple Zernike coefficients constituting the Zernike polynomial. The prediction formula generator 224 then generates a relational expression showing the relationship between two or more target parameters and the multiple Zernike coefficients. This relational expression can be used to calculate changes in the multiple Zernike coefficients corresponding to changes in any one or more of the two or more target parameters. The change in linewidth (at each measurement point) can then be calculated from the changes in the multiple Zernike coefficients. The prediction formula generated by the prediction formula generator 224 includes, for example, the Zernike polynomial and the relational expression. In one example, the Zernike polynomial includes four terms of zeroth, second, fourth, and sixth orders related to the diameter of the wafer W (including the above Z1, Z4, Z9, and Z16).

[0118] In step S73, for example, the input data acquisition unit 222 acquires prediction conditions for predicting line width distributions in order to obtain recommended values ​​for two or more target parameters. As shown in FIG. 17 , the input data acquisition unit 222 may display a setting screen 260 on the monitor 206, allowing the user to input the prediction conditions. The prediction conditions include, for each target parameter, a variation range representing the range of change when performing prediction, and a width of change within the variation range (variation range). The variation range is defined by a minimum value and a maximum value. The setting screen 260 may allow the user to input the minimum and maximum values ​​of the variation range, as well as the variation range.

[0119] 17, for the parameter that defines the movement speed [m / s] of the nozzle 61 in the scan-out process, the minimum value of the variation range is set to 50, and the maximum value of the variation range is set to 250. The amount of change is set to 25. When predicting the line width distribution, the setting assistance device 200 changes the four target parameters as follows: Scan-out speed (movement speed of nozzle 61 in scan-out process): 50, 75, 100, 125, 150, 175, 200, 225, 250 Scan-in speed (movement speed of nozzle 61 in scan-in process): 50, 75, 100, 125, 150, 175, 200, 225, 250 Paddle maintenance time (execution time of paddle maintenance process): 5, 10, 15, 20, 25, 30, 35, 40, 45, 50 Outer periphery development time (execution time of outer periphery ejection process): 2, 6, 10, 14, 18, 22, 26, 30, 34

[0120] In step S74, for example, the prediction calculation unit 226 calculates recommended values ​​for each of the two or more target parameters that will bring the line width distribution closer to the target, based on the prediction formula generated in step S72 and the variation range of each target parameter acquired in step S73. In one example, the prediction calculation unit 226 uses the prediction formula to calculate a predicted line width distribution for each of all combinations of values ​​of the two or more target parameters defined by the variation range and change width for each target parameter acquired in step S73. The prediction calculation unit 226 then calculates an index value representing the line width uniformity (in-plane uniformity) in the line width distribution for each of all combinations of values ​​of the two or more target parameters. The prediction calculation unit 226 may calculate a value based on the standard deviation (e.g., a value three times the standard deviation) as the index value representing uniformity.

[0121] 17 , one combination of four target parameters is represented as (scan-out speed, scan-in speed, puddle hold time, outer peripheral developing time). First, prediction calculation unit 226 calculates the predicted line width distribution when the values ​​of the four target parameters are (50, 50, 5, 2) using the prediction formula described above, thereby obtaining the index value. Next, prediction calculation unit 226 fixes the other three target parameters, varies one target parameter by the set variation width described above, and obtains the predicted line width distribution and the index value for each variation step, repeating this process until all combinations are completed.

[0122] The prediction calculation unit 226 identifies a combination of values ​​of two or more target parameters that results in the smallest index value representing uniformity, and determines the value of each target parameter in that combination as the recommended value for each of the two or more target parameters. In one example, if the index value in the predicted line width distribution is smallest when the values ​​of the four target parameters are (75, 100, 40, 10), the prediction calculation unit 226 determines (75, 100, 40, 10) as the recommended value.

[0123] In step S75, for example, the result output unit 228 outputs information indicating the calculation results calculated in step S74. In one example, the result output unit 228 causes the monitor 206 to display recommended values ​​for each of two or more target parameters and a predicted result of the line width distribution (predicted line width distribution) based on the recommended values. Fig. 18 shows an example of a result screen displayed on the monitor 206. The result output unit 228 may cause the monitor 206 to display calculation result information 272 and graph information 274.

[0124] In one example, the calculation result information 272 includes the recommended values ​​for each of the four target parameters, the average value of the predicted line width distribution, a value obtained by multiplying the standard deviation by three, and the predicted line width at each measurement position. The graph information 274 includes a graph showing the change in the predicted line width with respect to the change in the measurement position.

[0125] Steps S81 to S85 are executed in the same manner as steps S71 to S75, respectively, except for the type of the two or more target parameters. Execution of step S75 or step S85 ends the setting support process of step S60. The user of the setting support device 200 may check the output result of step S75 or step S85 and change the setting values ​​of the two or more target parameters stored in the condition storage unit 104 of the control device 100 to the recommended values ​​calculated in step S74 or step S84. In the production stage after the two or more target parameters have been changed (adjusted), a thin film development process or a thick film development process may be performed by the developing unit U3 in accordance with a plurality of parameters including the two or more changed target parameters.

[0126] Here, a specific example of a series of processes including generating a prediction formula, predicting a line width distribution, and calculating a recommended value in steps S72 to S74 (or steps S82 to S84) will be described. The following describes an example in which the thin film support process is executed by the first support process execution unit 220. A similar series of processes may be executed by the second support process execution unit 230.

[0127] <Step (i)> First, the prediction formula generator 224 smooths the measured data of the line width distribution using Zernike polynomials. Smoothing the measured data of the line width distribution using Zernike polynomials corresponds to finding the coefficients of the Zernike terms (e.g., Z1, Z4, Z9, Z16) in the Zernike polynomials. When a set of measured data of the line width distributions of multiple samples is represented by a matrix "F", the prediction formula generator 224 performs Zernike approximation on the measured data of the line width distribution as shown in the following formulas (1) and (2): F=α ｚ ・Z...(1) α ｚ = F.Z. －１ ... (2)

[0128] In equations (1) and (2), matrix "F" has elements (components) whose number is obtained by multiplying the number of samples by the number of measurement points in the line width distribution. When the number of samples is denoted as n, if the number of measurement points in the line width distribution is 100, matrix "F" has (n x 100) elements (components). In the example shown in Figures 13(a) and 13(b), n is 6. In equations (1) and (2), matrix "Z" is a matrix for specifying the contribution to the Zernike polynomials at each measurement point in the line width distribution. For example, matrix "Z" can be obtained by converting the position of each measurement point defined in plane coordinates (XY space) into Zernike space defined by the Zernike polynomials. When Z1, Z4, Z9, and Z16 are used as Zernike terms and the number of measurement points is 100, matrix "Z" has (4 x 100) elements (components). Matrix "Z" －１ " is the inverse matrix of the matrix "Z". －１ " is a matrix determined by the Zernike terms used for approximation and the positions of each measurement point, regardless of the linewidth at each measurement point in the linewidth distribution.

[0129] In equations (1) and (2), the matrix “α ｚ " is a matrix representing the Zernike coefficients. ｚ The matrix "α" has the value of each Zernike coefficient for each of the multiple samples as an element (component) of the matrix. ｚ If the line width at each measurement point in the line width distribution for each sample is different, the matrix "α ｚ " can also be regarded as a matrix that specifies the relationship between each Zernike term in the Zernike polynomial and the measured data of the line width distribution for each sample. When Z1, Z4, Z9, and Z16 are used as the Zernike terms, the matrix "α ｚ " has (n×4) elements (components). Execution of step (i) corresponds to approximating a distribution representing the line width fluctuations at a plurality of measurement points with a Zernike polynomial, thereby determining a plurality of Zernike coefficients constituting the Zernike polynomial.

[0130] <Step (ii)> Next, the prediction formula generation unit 224 calculates the matrix “αｚ " and a matrix "P" that represents a set of sample values ​​of two or more target parameters to be adjusted. Specifically, the prediction formula generating unit 224 calculates the relationship between the matrix "α ｚ " and the matrix "β" that defines the relationship with the matrix "P" ｐ " is found. α ｚ = β ｐ ・P...(3) β ｐ = α ｚ ・P －１ ...(4)

[0131] In Equation (3) and Equation (4), the matrix "P" has elements (components) equal to the number of target parameters (2 or more) multiplied by the number of samples n. The matrix "P" has, for example, the values ​​in the table shown in FIG. 13(a) as elements (components). In this case, the matrix "P" has (4 x 6) elements (components). In the stage of performing step (ii), the matrix "α ｚ Since the matrix "P" and the matrix "P" are known, the matrix "β ｐ Execution of this step (ii) corresponds to generating a relational expression that indicates the relationship between two or more target parameters and a plurality of Zernike coefficients.

[0132] By creating Equation (3) or Equation (4), it is possible to calculate changes in the Zernike coefficients when two or more target parameters change. Equation (3) (or Equation (4)) is an example of a relational expression showing the relationship between two or more target parameters and a plurality of Zernike coefficients. Furthermore, Equations (1) and (3) (or Equations (2) and (4)) are examples of prediction expressions for predicting line width distribution. Hereinafter, for convenience of explanation, a combination (set) of sample values ​​of two or more target parameters for one sample will be referred to as a "sample condition." As shown in FIG. 13( a), a plurality of sample conditions different from each other are set.

[0133] <Step (iii)> Next, prediction calculation unit 226 determines a reference condition from among a plurality of sample conditions for a plurality of samples. For example, prediction calculation unit 226 calculates, for each sample, a uniformity index value based on the standard deviation of the measured data of line width distribution (e.g., a value three times the standard deviation), and selects the sample condition with the smallest index value as the reference condition.

[0134] <Step (iv)> Next, the prediction calculation unit 226 selects one combination from all combinations of the values ​​of two or more target parameters determined by the variation range and change width of each target parameter. This one combination is the combination for which the line width distribution is to be predicted, and hereinafter, this combination is referred to as "P ｐｒｅｄ The sample conditions selected as the reference conditions are denoted as "P ｓｔｄ After selecting one combination, the prediction calculation unit 226 calculates the difference "ΔP ｐｒｅｄ " is calculated. ΔP ｐｒｅｄ =P ｐｒｅｄ -P ｓｔｄ ...(5)

[0135] <Step (v)> Next, the prediction calculation unit 226 calculates the difference ΔP using the formula generated in step (ii), as shown in the following formula (6): ｐｒｅｄ The change in the Zernike coefficients according to ｐｒｅｄ " is written as ". ) is calculated. Δα ｐｒｅｄ = β ｐ ・ΔP ｐｒｅｄ ...(6) Then, the prediction calculation unit 226 calculates the change Δα of the Zernike coefficients using the equation generated in step (i). ｐｒｅｄ The change in line width corresponding to (more specifically, the change in line width at each measurement point; hereinafter, "ΔF ｐｒｅｄ " is expressed as ". ) is calculated. ΔF ｐｒｅｄ =Δα ｐｒｅｄ ・Z ... (7)

[0136] Execution of this step (v) corresponds to calculating the amount of change in a plurality of Zernike coefficients according to the amount of change in any one or more of the two or more target parameters, and calculating the change in line width (line width at each measurement point) from the amount of change in the plurality of Zernike coefficients.

[0137] <Step (vi)> Next, the prediction calculation unit 226 calculates the line width distribution under the reference conditions using the actual measurement data (hereinafter referred to as "F ｓｔｄ ") The line width change ΔF calculated by equation (7) ｐｒｅｄ This results in the parameter ΔP being ｐｒｅｄ The predicted result of the line width distribution when the "F ｐｒｅｄ " is the predicted result of the line width distribution, and has the predicted value of the line width at each measurement point. F ｐｒｅｄ =F ｓｔｄ +ΔF ｐｒｅｄ ...(8)

[0138] <Step (vii)> Next, the prediction calculation unit 226 performs the calculations of steps (iv) to (vi) for all combinations of the values ​​of two or more target parameters determined by the variation range and change width of each target parameter. The prediction calculation unit 226 then calculates an index value representing uniformity, such as three times the standard deviation, for each of the predicted line width distributions for all of the combinations. The prediction calculation unit 226 then selects the combination with the smallest index value representing uniformity (e.g., the smallest three times the standard deviation) and determines the values ​​of the two or more target parameters in that combination as recommended values. While the example of performing the calculations of steps (iv) to (vi) for each combination has been described, the calculations of steps (iv) to (vi) may be performed simultaneously for all combinations of the values ​​of two or more target parameters.

[0139] [Modifications] The series of processes shown in FIG. 15 is an example and can be modified as appropriate. In the series of processes, the setting support device 200 may execute one step and the next step in parallel, or may execute the steps in an order different from that of the above example. The setting support device 200 may omit any step, or may execute any step in a different order from that of the above example. The setting support device 200 may execute a series of processes including generating a prediction formula, predicting a line width distribution, and calculating a recommended value in a procedure different from that of steps (i) to (vii) described above. In generating the prediction formula, in addition to the coefficients related to Z1, Z4, Z9, and Z16, coefficients other than these coefficients (other Zernike terms) may be used as Zernike coefficients. In generating the prediction formula, coefficients other than these coefficients (other Zernike terms) may be used as Zernike coefficients instead of at least some of the coefficients related to Z1, Z4, Z9, and Z16. The prediction formula for predicting line width distribution may be generated (constructed) by a method other than a method using Zernike approximation.

[0140] As shown in Fig. 17, the user may be able to set an upper limit for the development time and an upper limit for the amount of chemicals consumed. The development time refers to the time from the start to the end of the development process (e.g., process flow S1 or process flow S2), and the amount of chemicals consumed refers to the total amount of developer consumed in the development process. The development time and the amount of chemicals consumed may be calculated from multiple parameters including two or more target parameters. Each of the development time and the amount of chemicals consumed may vary depending on the values ​​of the two or more target parameters.

[0141] In one example, if upper limits for the development time and the chemical consumption are set in step S74, the prediction calculation unit 226 calculates the development time and the chemical consumption for each combination of values ​​of two or more target parameters. Then, the prediction calculation unit 226 excludes, from among the combinations of values ​​of two or more target parameters, any combination in which the calculation result for at least one of the development time and the chemical consumption exceeds the set upper limit. After excluding such combinations, the prediction calculation unit 226 may calculate recommended values ​​for each of the two or more target parameters. If upper limits for the development time and the chemical consumption are set, the prediction calculation unit 236 may perform calculations in step S84 similar to the calculations performed by the prediction calculation unit 226 in step S74.

[0142] When upper limits for development time and chemical consumption are set, even if a combination results in the highest uniformity index value (for example, the smallest value three times the standard deviation), if the calculated value for development time or the calculated value for chemical consumption exceeds the upper limit, the combination will not be determined as a recommended value.Instead of setting both the upper limits for development time and chemical consumption, the user may be able to set either the upper limit for development time or the upper limit for chemical consumption.

[0143] In the above example, a distribution with high in-plane uniformity is set as the target distribution, but a distribution with a specific profile rather than a constant linewidth may also be set as the target distribution. For example, as shown in FIG. 17 , the user may be able to select whether the target distribution is to target in-plane uniformity or a distribution with a specific profile. When the target distribution is selected to be a distribution with a specific profile, the input data acquisition unit 222 and the input data acquisition unit 232 may acquire a target linewidth distribution representing a target linewidth distribution based on user input. Each of the input data acquisition unit 222 and the input data acquisition unit 232 may function as a target information acquisition unit that acquires a target linewidth distribution.

[0144] In step S74, the prediction calculation unit 226 may calculate recommended values ​​for each of the two or more parameters based on a comparison between the target line width distribution and the predicted line width distribution results obtained by the prediction formula when two or more target parameters are varied within the variation ranges of the respective target parameters. In one example, the prediction calculation unit 226 calculates the difference between the predicted line width value and the target line width value at each of a plurality of measurement positions for each combination of the values ​​of the two or more target parameters, and then counts the measurement positions where the difference is below a predetermined level. The prediction calculation unit 226 then selects a combination from among the combinations of the values ​​of the two or more target parameters where the counted number of measurement positions where the difference is below the predetermined level exceeds a set threshold, and determines the values ​​of the two or more target parameters for that combination as recommended values. When the comparison with the target line width distribution is performed, the prediction calculation unit 236 may perform a calculation in step S84 similar to the calculation performed by the prediction calculation unit 226 in step S74.

[0145] When there are two or more combinations in which the count number exceeds the threshold, the prediction calculation unit 226 and the prediction calculation unit 236 may calculate two or more combinations of recommended values. Fig. 19 shows an example of the output result to the monitor 206 when a target line width distribution is input. In the example shown in Fig. 19, "recommended 1" and "recommended 2" are obtained as combinations of two recommended values.

[0146] 19 , calculation result information 272 includes calculation results of recommended values ​​and the like for recommendation 1 and calculation results of recommended values ​​and the like for recommendation 2. Graph information 274 includes a graph showing a predicted line width distribution for recommendation 1, a graph showing a predicted line width distribution for recommendation 2, and a graph showing a target line width distribution. Similarly, in step (vii) described above, a comparison of the predicted line width distribution with the target line width distribution may be performed, and a recommended value may be calculated based on the comparison result.

[0147] In one example of the various examples described above, at least some of the matters described in other examples may be combined.

[0148] [Summary of the present disclosure] The present disclosure includes the following configurations [1] to

[20] .

[0149] [1] A condition setting support method including: executing a support process for supporting the setting of conditions for a development process, including supplying a developer to a film formed on a surface (Wa) of a substrate (W), the support process including: acquiring a plurality of data sets, each data set including sample values ​​of a plurality of parameters (two or more target parameters) representing at least a portion of the conditions for the development process and measured data of a line width distribution representing variations in line width on the surface (Wa) of the substrate (W) after the development process; generating a prediction formula for predicting the line width distribution based on the plurality of data sets; acquiring setting values ​​for a variation range for each of the plurality of parameters (two or more target parameters) when making the prediction; and calculating, based on the prediction formula and the variation range, recommended values ​​for each of the plurality of parameters (two or more target parameters) that will bring the line width distribution closer to a target distribution and a predicted line width distribution result corresponding to the recommended values. In this condition setting support method, the support process is executed to calculate recommended values ​​for the plurality of parameters that will bring the line width distribution on the surface (Wa) of the substrate (W) closer to the target value and the predicted line width distribution result corresponding to the recommended values. Therefore, when a person such as an operator adjusts the conditions of the development process, by knowing the calculated recommended values ​​and the predicted results of the line width distribution, the conditions of the development process can be easily set without relying on experience or extensive trial and error. Therefore, this condition setting support method is useful for simplifying the work of setting the conditions of the development process.

[0150] [2] The condition setting support method according to the above [1], wherein, in calculating the recommended values ​​for each of a plurality of parameters (two or more target parameters), an index value representing the uniformity of the line width is evaluated from the predicted results of the line width distribution by a prediction formula when the plurality of parameters (two or more target parameters) are varied within a variation range, thereby calculating the recommended values ​​for each of the plurality of parameters (two or more target parameters). In this case, it is possible to easily grasp the values ​​of the plurality of parameters that will increase the uniformity of the line width within the surface of the substrate (W).

[0151] [3] The condition setting support method according to the above [1], further comprising: acquiring a target line width distribution representing a target for the line width distribution; and, in calculating a recommended value for each of a plurality of parameters (two or more target parameters), calculating the recommended value for each of the plurality of parameters (two or more target parameters) based on a comparison between a predicted result of the line width distribution by a prediction formula when the plurality of parameters (two or more target parameters) are varied within a variation range and the target line width distribution. In this case, it is possible to easily grasp the values ​​of the plurality of parameters that result in a line width distribution having a tendency similar to the target line width distribution.

[0152] [4] The condition setting support method according to any one of [1] to [3] above, wherein supplying a developer during the development process includes discharging the developer from the nozzle (61) while the tip (61a) of the nozzle (61) is in contact with the developer on the surface (Wa) of the substrate (W). When the development process is performed while the tip (61a) of the nozzle (61) is in contact with the developer and discharging the developer, the factors affecting the line width distribution tend to be more complex than when such developer discharging is not performed, making parameter adjustment more complicated. In contrast, this support method simplifies the parameter adjustment process by providing support for recommended parameter values ​​and predicting the line width distribution based on those recommended values. As described above, by using this method for development processes where parameter adjustment tends to be complicated, the benefits of simplifying the condition setting process can be further realized.

[0153] [5] The condition setting support method according to [4] above, further comprising executing a second support process corresponding to the support process, the second support process being a process for supporting the setting of conditions for the second development process, including supplying a developer to a second film having a larger film thickness than the target film on which the development process is to be performed, and wherein the plurality of parameters (two or more target parameters) for which recommended values ​​are calculated in the support process are different from the plurality of parameters (two or more target parameters) for which recommended values ​​are calculated in the second support process. Factors that significantly affect the line width distribution may differ depending on the film thickness. In the above method, the plurality of parameters for which recommended values ​​are calculated are different for large and small film thicknesses, making it easy to set conditions appropriate for the film thickness.

[0154] [6] The condition setting support method according to [5], wherein the number of parameters (two or more target parameters) for which recommended values ​​are calculated in the support process is greater than the number of parameters (two or more target parameters) for which recommended values ​​are calculated in the second support process. When the film thickness is small, the influence of more factors can be reflected in the line width distribution. In this method, since the number of parameters for which recommended values ​​are calculated in the support process executed when the film thickness is small is large, it is easy to bring the line width distribution closer to the target distribution by adjusting the parameters, even when the film thickness is small.

[0155] [7] The condition setting support method according to the above [5] or [6], wherein the number of steps executed in the development process is smaller than the number of steps executed in the second development process. In this case, a development process suited to the film thickness can be executed.

[0156] [8] The development process includes a first step of discharging the developer from the nozzle (61) while moving the nozzle (61) in contact with the developer on the surface (Wa) of the substrate (W) from the center to the periphery of the substrate (W); a second step of discharging the developer from the nozzle (61) while moving the nozzle (61) in contact with the developer on the surface (Wa) of the substrate (W) from the periphery to the center of the substrate (W); a third step of maintaining a puddle of the developer on the surface (Wa) of the substrate (W); and a fourth step of supplying the developer to an outer peripheral region of the surface (Wa) and not supplying the developer to an area on the surface (Wa) of the substrate (W) that is more inward than the outer peripheral region, wherein the plurality of parameters (two or more target parameters) for which recommended values ​​are calculated in the support process include the movement speed of the nozzle (61) in the first step, the movement speed of the nozzle (61) in the second step, the execution time of the third step, and the execution time of the fourth step. In this case, it is possible to easily adjust four types of parameters that have a large effect on line width distribution in a development process with a small film thickness.

[0157] [9] The condition setting support method according to any one of [5] to [8] above, wherein the second development process includes a first step of supplying a developer to an outer peripheral region of the surface (Wa) of the substrate (W) without supplying the developer to a region on the surface (Wa) of the substrate (W) that is more inward than the outer peripheral region, a second step of ejecting the developer from a nozzle (61) arranged to face the center of the surface (Wa) of the substrate (W), and a third step of maintaining a puddle of the developer on the surface (Wa) of the substrate (W), and the multiple parameters (two or more target parameters) for which recommended values ​​are calculated in the second support process include the execution time of the first step, the execution time of the second step, and the execution time of the third step. In this case, it is possible to easily adjust three types of parameters that have a large effect on the line width distribution in a development process with a large film thickness.

[0158]

[10] The condition setting support method according to any one of [1] to [9] above, further comprising evaluating whether a puddle of developer is properly formed on the surface (Wa) of the substrate (W) during the development process before executing the support process. If a puddle of developer is not properly formed even after adjusting the multiple parameters for which the recommended values ​​are calculated, it is necessary to verify the conditions of the development process, including factors other than the multiple parameters. As a result, it may be necessary to adjust the multiple parameters again after confirming that a puddle is properly formed. In this method, whether a puddle of developer is properly formed is evaluated before executing the support process for adjusting the multiple parameters, which is useful for improving the efficiency of the condition adjustment work.

[0159]

[11] The condition setting support method according to any one of the above [1] to

[10] , wherein generating the prediction formula includes approximating, based on a plurality of data sets, a distribution representing line width fluctuations at a plurality of different measurement points along the radial direction of the surface (Wa) of the substrate (W), using Zernike polynomials, and creating a relational expression representing the relationship between a plurality of coefficients included in the Zernike polynomials and a plurality of parameters. In this case, the prediction formula can be generated more simply and appropriately.

[0160]

[12] The condition setting support method according to

[11] , wherein the Zernike polynomial includes four terms of order 0, order 2, order 4, and order 6 related to the diameter of the substrate (W). The Zernike polynomial may also include higher-order terms as components. In contrast, by generating a formula that includes the four terms of order 2, order 4, and order 6, it is possible to avoid the coefficients used in the Zernike polynomial from becoming too complex and to suppress overlearning when approximating the linewidth distribution.

[0161]

[13] A computer-readable storage medium storing a program for causing an apparatus to execute the condition setting support method according to any one of [1] to

[12] above. This storage medium is useful for simplifying the work of setting conditions for development processing.

[0162]

[14] A condition setting support device (200) including an support processing execution unit (220) that executes support processing to support setting of conditions for performing a development process including supplying a developer to a coating formed on a surface (Wa) of a substrate (W), wherein the support processing execution unit (220) executes the following operations in the support processing: acquiring a plurality of data sets, each data set including sample values ​​of a plurality of parameters (two or more target parameters) that represent at least a part of the conditions for performing the development process, and measured data of a line width distribution that represents fluctuations in line width on the surface (Wa) of the substrate (W) after the development process; generating a prediction formula for predicting the line width distribution based on the plurality of data sets; acquiring setting values ​​of fluctuation ranges for each of the plurality of parameters (two or more target parameters) when making the prediction; and calculating recommended values ​​for each of the plurality of parameters (two or more target parameters) that bring the line width distribution closer to a target distribution, and a predicted result of the line width distribution corresponding to the recommended values, based on the prediction formula and the fluctuation ranges. This setting support device (200) is useful for simplifying the work of setting conditions for development processing, similar to the condition setting support method described in [1] above.

[0163]

[15] The condition setting support device (200) described in

[14] above, wherein the support processing execution unit (220) calculates the recommended value for each of the plurality of parameters (two or more target parameters) by evaluating an index value representing line width uniformity from a prediction result of a line width distribution using a prediction formula when the plurality of parameters (two or more target parameters) are varied within a variation range. In this case, similar to the condition setting support method described in [2] above, it is possible to easily grasp the values ​​of the plurality of parameters that will increase the line width uniformity within the surface of the substrate (W).

[0164]

[16] The condition setting support device (200) described in

[14] above, wherein the support process execution unit (220) further acquires a target line width distribution representing a target for the line width distribution, and in calculating the recommended values ​​for each of the plurality of parameters (two or more target parameters), the support process execution unit (220) calculates the recommended values ​​for each of the plurality of parameters (two or more target parameters) based on a comparison between a predicted result of the line width distribution by a prediction formula when the plurality of parameters (two or more target parameters) are varied within a variation range and the target line width distribution. In this case, similar to the condition setting support method described in [3] above, it is possible to easily grasp the values ​​of the plurality of parameters that result in a line width distribution having a tendency similar to the target line width distribution.

[0165]

[17] The condition setting support device (200) according to any one of the above items

[14] to

[16] , wherein supplying a developer in the development process includes discharging the developer from the nozzle (61) while the tip (61 a) of the nozzle (61) is in contact with the developer on the surface (Wa) of the substrate (W). In this case, similar to the condition setting support method according to the above item [4], by using the setting support device (200) for development processes in which parameter adjustment tends to be complicated, it is possible to further benefit from simplification of the work of setting conditions.

[0166]

[18] The condition setting support device (200) described in

[17] above, further comprising a second support process execution unit (230) that executes a second support process corresponding to the support process, the second support process being a process that supports setting of conditions for a second developing process, including supplying a developer to a second coating that has a thickness larger than that of a target coating on which a developing process is to be executed, and the multiple parameters (two or more target parameters) for which recommended values ​​are calculated in the support process are different from the multiple parameters (two or more target parameters) for which recommended values ​​are calculated in the second support process. In this case, as with the condition setting support method described in [5] above, it is easy to set conditions appropriate for the thickness of the film.

[0167]

[19] The development process includes a first step of discharging the developer from the nozzle (61) while moving the nozzle (61) in contact with the developer on the surface (Wa) of the substrate (W) from the center to the periphery of the substrate (W); a second step of discharging the developer from the nozzle (61) while moving the nozzle (61) in contact with the developer on the surface (Wa) of the substrate (W) from the periphery to the center of the substrate (W); a third step of maintaining a puddle of the developer on the surface (Wa) of the substrate (W); and a fourth step of supplying the developer to an outer peripheral region of the surface (Wa) of the substrate (W) and not supplying the developer to a region on the surface (Wa) of the substrate (W) that is further inward than the outer peripheral region, wherein the plurality of parameters (two or more target parameters) for which recommended values ​​are calculated in the support process include the movement speed of the nozzle (61) in the first step, the movement speed of the nozzle (61) in the second step, the execution time of the third step, and the execution time of the fourth step. In this case, similar to the condition setting support method described in the above item [8], it is possible to easily adjust four types of parameters that have a large effect on the line width distribution in a development process for a small film thickness.

[0168]

[20] The condition setting support device (200) described in

[18] or

[19] above, wherein the second development process includes a first step of supplying a developer to an outer peripheral region of the surface (Wa) of the substrate (W) without supplying the developer to a region inside the outer peripheral region of the surface (Wa) of the substrate (W), a second step of ejecting the developer from a nozzle (61) arranged to face the center of the surface (Wa) of the substrate (W), and a third step of maintaining a puddle of the developer on the surface (Wa) of the substrate (W), and the multiple parameters (two or more target parameters) for which recommended values ​​are calculated in the second support process include the execution time of the first step, the execution time of the second step, and the execution time of the third step. In this case, as with the condition setting support method described in [9] above, it is possible to easily adjust three types of parameters that have a significant impact on line width distribution in a development process with a large film thickness.

[0169] 1...wafer processing system, W...wafer, Wa...surface, U3...developing unit, 61...nozzle, 200...setting support device, 220...first support process execution unit, 222...input data acquisition unit, 224...prediction formula generation unit, 226...prediction calculation unit, 228...result output unit, 230...second support process execution unit, 232...input data acquisition unit, 234...prediction formula generation unit, 236...prediction calculation unit, 238...result output unit.

Claims

1. A condition setting support method comprising: executing a support process for supporting setting of conditions for performing a development process including supplying a developer to a coating formed on a surface of a substrate, the support process comprising: acquiring a plurality of data sets, each data set including sample values ​​of a plurality of parameters representing at least a portion of the conditions for performing the development process and measured line width distribution data representing fluctuations in line width on the surface of the substrate after the development process; generating a prediction formula for predicting the line width distribution based on the plurality of data sets; acquiring a setting value for a variation range for each of the plurality of parameters when making the prediction; and calculating, based on the prediction formula and the variation range, recommended values ​​for each of the plurality of parameters such that the line width distribution approaches a target distribution, and a prediction result of the line width distribution corresponding to the recommended value.

2. A condition setting support method as described in claim 1, wherein in calculating the recommended value for each of the plurality of parameters, an index value representing line width uniformity is evaluated from the predicted result of the line width distribution by the prediction formula when the plurality of parameters are varied within the variation range, thereby calculating the recommended value for each of the plurality of parameters.

3. The condition setting support method according to claim 1, further comprising: acquiring a target line width distribution representing a target for the line width distribution; and in calculating the recommended value for each of the plurality of parameters, the recommended value for each of the plurality of parameters is calculated based on a comparison between a prediction result of the line width distribution by the prediction formula when the plurality of parameters are varied within the variation range and the target line width distribution.

4. A condition setting support method according to any one of claims 1 to 3, wherein supplying the developer in the development process includes ejecting the developer from a nozzle while the tip of the nozzle is in contact with the developer on the surface of the substrate.

5. A condition setting support method as described in claim 4, further comprising executing a second support process corresponding to the support process, the second support process being a process for supporting setting of conditions for a second developing process including supplying the developer to a second coating having a thickness larger than that of the coating on which the developing process is to be performed, and the plurality of parameters for which the recommended values ​​are calculated in the support process and the plurality of parameters for which the recommended values ​​are calculated in the second support process are different from each other.

6. A condition setting assistance method according to claim 5, wherein the number of the plurality of parameters for which the recommended values ​​are calculated in the assistance process is greater than the number of the plurality of parameters for which the recommended values ​​are calculated in the second assistance process.

7. The condition setting support method according to claim 5, wherein the number of steps executed in the developing process is smaller than the number of steps executed in the second developing process.

8. The condition setting support method according to claim 5, wherein the developing process includes a first step of ejecting the developing solution from the nozzle while moving the nozzle, in contact with the developing solution on the surface of the substrate, from the center of the substrate toward the periphery of the substrate; a second step of ejecting the developing solution from the nozzle while moving the nozzle, in contact with the developing solution on the surface of the substrate, from the periphery of the substrate toward the center of the substrate; a third step of maintaining a puddle of the developing solution on the surface of the substrate; and a fourth step of supplying the developing solution to an outer periphery region on the surface of the substrate and not supplying the developing solution to a region on the surface of the substrate that is more inward than the outer periphery region, and wherein the multiple parameters for which the recommended values ​​are calculated in the support process include a nozzle movement speed in the first step, a nozzle movement speed in the second step, an execution time of the third step, and an execution time of the fourth step.

9. The condition setting support method of claim 5, wherein the second developing process includes a first step of supplying the developer to an outer peripheral region on the surface of the substrate and not supplying the developer to a region on the surface of the substrate that is more inward than the outer peripheral region, a second step of ejecting the developer from the nozzle arranged to face the center of the surface of the substrate, and a third step of maintaining a puddle of the developer on the surface of the substrate, and the multiple parameters for which the recommended values ​​are calculated in the second support process include an execution time of the first step, an execution time of the second step, and an execution time of the third step.

10. A condition setting support method according to any one of claims 1 to 3, further comprising evaluating, before performing the support process, whether a puddle of the developer is properly formed on the surface of the substrate during the development process.

11. A condition setting assistance method according to any one of claims 1 to 3, wherein generating the prediction equation comprises: approximating, based on the plurality of data sets, a distribution representing line width variations at a plurality of mutually different measurement points along the radial direction of the surface of the substrate, using Zernike polynomials; and creating a relational equation showing the relationship between a plurality of coefficients included in the Zernike polynomials and the plurality of parameters.

12. The condition setting support method according to claim 11, wherein the Zernike polynomial includes four types of terms of 0th order, 2nd order, 4th order, and 6th order related to the diameter of the substrate.

13. A computer-readable storage medium storing a program for causing an apparatus to execute the condition setting support method according to any one of claims 1 to 3.

14. A condition setting support device comprising an support process execution unit that executes a support process to support setting of conditions for performing a development process including supplying a developer to a coating formed on a surface of a substrate, wherein the support process execution unit executes the following in the support process: acquire a plurality of data sets, each data set including sample values ​​of a plurality of parameters representing at least a portion of the conditions for performing the development process and measured line width distribution data representing fluctuations in line width on the surface of the substrate after the development process; generate a prediction formula for predicting the line width distribution based on the plurality of data sets; acquire setting values ​​for a variation range when making the prediction for each of the plurality of parameters; and calculate, based on the prediction formula and the variation range, recommended values ​​for each of the plurality of parameters such that the line width distribution approaches a target distribution, and a prediction result of the line width distribution corresponding to the recommended value.

15. The condition setting support device described in claim 14, wherein the support processing execution unit, in calculating the recommended value for each of the plurality of parameters, calculates the recommended value for each of the plurality of parameters by evaluating an index value representing line width uniformity from the prediction result of the line width distribution using the prediction formula when the plurality of parameters are varied within the variation range.

16. The condition setting support device described in claim 14, wherein the support process execution unit further executes acquiring a target line width distribution representing a target for the line width distribution, and in calculating the recommended value for each of the plurality of parameters, the support process execution unit calculates the recommended value for each of the plurality of parameters based on a comparison between the predicted result of the line width distribution by the prediction formula when the plurality of parameters are varied within the variation range and the target line width distribution.

17. A condition setting support device according to any one of claims 14 to 16, wherein supplying the developer in the development process includes ejecting the developer from the nozzle while the tip of the nozzle is in contact with the developer on the surface of the substrate.

18. A condition setting support device as described in claim 17, further comprising a second support process execution unit that executes a second support process corresponding to the support process, the second support process being a process that supports setting conditions for a second developing process including supplying the developer to a second coating having a larger thickness than the coating on which the developing process is to be executed, and the multiple parameters for which the recommended values ​​are calculated in the support process and the multiple parameters for which the recommended values ​​are calculated in the second support process are different from each other.

19. The condition setting support device of claim 18, wherein the developing process includes a first step of ejecting the developer from the nozzle while moving the nozzle in contact with the developer on the surface of the substrate from the center to the periphery of the substrate; a second step of ejecting the developer from the nozzle while moving the nozzle in contact with the developer on the surface of the substrate from the periphery to the center of the substrate; a third step of maintaining a puddle of the developer on the surface of the substrate; and a fourth step of supplying the developer to an outer periphery region on the surface of the substrate and not supplying the developer to a region on the surface of the substrate that is more inward than the outer periphery region, and wherein the multiple parameters for which the recommended values ​​are calculated in the support process include a nozzle movement speed in the first step, a nozzle movement speed in the second step, an execution time of the third step, and an execution time of the fourth step.

20. The condition setting support device of claim 18, wherein the second development process includes a first step of supplying the developer to an outer peripheral region on the surface of the substrate and not supplying the developer to a region on the surface of the substrate that is more inward than the outer peripheral region, a second step of ejecting the developer from the nozzle arranged to face the center of the surface of the substrate, and a third step of maintaining a puddle of the developer on the surface of the substrate, and the multiple parameters for which the recommended values ​​are calculated in the second support process include an execution time of the first step, an execution time of the second step, and an execution time of the third step.

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