Overvoltage regulation circuit of radio frequency power amplifier, and communication device

Abstract

Disclosed are an overvoltage regulation circuit of a radio frequency power amplifier, and a communication device. The overvoltage regulation circuit is coupled to a bias circuit of the radio frequency power amplifier; the overvoltage regulation circuit comprises a level reference network, a leakage suppression network and a first switch; one end of the level reference network is coupled to a power supply of the radio frequency power amplifier, and the other end of the level reference network is coupled to a control end of the first switch and is configured to control the first switch to be turned on when it is detected that the power supply is overvoltage; and one end of the leakage suppression network is coupled to the first switch, and the other end of the leakage suppression network is coupled to the bias circuit of the radio frequency power amplifier and is configured to generate, when the first switch is turned on, a compensation signal to regulate the bias circuit, so as to regulate a working state of the radio frequency power amplifier. The circuit can ensure that the radio frequency power amplifier will not be permanently burned when the power supply has unstable conditions such as voltage overshoot and voltage fluctuation, and can adaptively satisfy system performance requirements.

Description

Overvoltage regulation circuit of radio frequency power amplifier and communication device Technical Field

[0001] The present invention relates to the field of radio frequency / communication technology, and in particular to an overvoltage regulation circuit of a radio frequency power amplifier. Background Art

[0002] Radio frequency power amplifiers (RF PAs) are key active components in radio frequency (RF) and communication systems and circuits, including RF integrated circuits and systems. RF PAs, also known as radio frequency power amplifiers (PAs), amplify low-power RF input signals and output higher-power signals, thereby increasing the transmission distance and quality of communication equipment.

[0003] RF power amplifiers typically draw their energy from a direct current (DC) source. This power management system or device typically converts other DC sources (such as lithium batteries) or AC sources into a stable DC power source, which is then supplied to the RF amplifier's VCC. However, under surges or other unusual conditions, the RF amplifier's DC source may experience voltage overshoots, voltage fluctuations, and other instabilities, resulting in performance fluctuations and even reliability issues such as permanent component burnout.

[0004] Summary of the Invention

[0005] The technical problem to be solved by the present invention is to overcome the defects in the prior art that power supply voltage fluctuation or overshoot leads to unstable RF PA performance or even damage to RF PA, and to provide a radio frequency power amplifier surge protection and overvoltage regulation circuit.

[0006] The present invention solves the above technical problems through the following technical solutions:

[0007] The present invention provides an overvoltage regulation circuit for a radio frequency power amplifier, wherein the overvoltage regulation circuit is coupled to a bias circuit of the radio frequency power amplifier; the overvoltage regulation circuit comprises a level reference network, a leakage suppression network, and a first switch;

[0008] One end of the level reference network is coupled to the power supply of the RF power amplifier, and the other end is coupled to the control end of the first switch, and is used to control the first switch to open when an overvoltage of the power supply is detected;

[0009] One end of the leakage suppression network is coupled to the first switch, and the other end is coupled to the bias circuit of the RF power amplifier, and is used to generate a compensation signal to adjust the bias circuit when the first switch is turned on, so as to adjust the working state of the RF power amplifier.

[0010] Preferably, the overvoltage regulation circuit further includes a control regulation network and a second switch;

[0011] One end of the control and regulation circuit is coupled to the control level, and the other end is coupled to the control end of the second switch; the first switch and the second switch are connected in series;

[0012] The control and regulation circuit is used to regulate the working state of the overvoltage regulation circuit by controlling the second switch.

[0013] Preferably, the control and regulation network includes a first bias resistor; one end of the first bias resistor is coupled to the control level, and the other end is coupled to the control end of the second switch.

[0014] Preferably, the control and regulation network further comprises at least one diode; the at least one diode is connected in series with the first bias resistor to regulate the conduction amount of the second switch; and / or,

[0015] The control and regulation network further includes at least one transistor; the at least one transistor is connected in series with the first bias resistor in the form of a diode, and is used to adjust the conduction amount of the second switch; and / or,

[0016] The control and regulation network further includes at least one MOS transistor (Metal-Oxide-Semiconductor Field-Effect Transistor); the at least one MOS transistor is connected in series with the first bias resistor in the form of a diode, and is used to adjust the conduction amount of the second switch.

[0017] Preferably, the second switch comprises a second transistor; the base of the second transistor is coupled to the output end of the control and regulation network, the collector of the second transistor is connected to the first switch, and the emitter of the second transistor is grounded; and / or,

[0018] The second switch includes a second field effect transistor; the gate of the second field effect transistor is coupled to the output end of the control and regulation network, the drain of the second field effect transistor is connected to the first switch, and the source of the second field effect transistor is grounded; and / or,

[0019] The control and regulation network further includes a signal regulator, one end of the signal regulator is coupled to the control end of the second switch, and the other end of the signal regulator is grounded;

[0020] The signal regulator is used to adjust the range of the compensation signal.

[0021] Preferably, the level reference network includes a second bias resistor and at least one diode; the second bias resistor and the at least one diode are connected in series, and the at least one diode is used to provide a level reference according to the power supply voltage; and / or,

[0022] The level reference network includes a second bias resistor and at least one transistor; the at least one transistor is connected in series with the second bias resistor in the form of a diode, and the at least one transistor is used to provide a level reference according to the power supply voltage; and / or,

[0023] The level reference network includes a second bias resistor and at least one MOS transistor; the at least one MOS transistor is connected in series with the second bias resistor in the form of a diode, and the at least one MOS transistor is used to provide a level reference according to the power supply voltage.

[0024] Preferably, the leakage suppression network short-circuits the first switch coupling and the bias circuit; and / or,

[0025] The leakage suppression network includes a diode connected in series or a transistor connected in series in the form of a diode to prevent current from flowing back to the bias circuit; and / or,

[0026] The level reference network further includes a decoupling capacitive device to reduce interference from potential power supply noise; and / or,

[0027] The leakage suppression network is further specifically configured to generate a voltage compensation signal to adjust the bias circuit when the first switch is turned on, so as to adjust the operating state of the radio frequency power amplifier.

[0028] Preferably, the first switch includes a first transistor; the base of the first transistor is coupled to the output end of the level reference network, the collector of the first transistor is coupled to the leakage suppression network, and the emitter of the first transistor is grounded through the second switch; and / or,

[0029] The first switch includes a first field effect transistor; the gate of the first field effect transistor is coupled to the output end of the level reference network, the drain of the first field effect transistor is coupled to the leakage suppression network, and the source of the first field effect transistor is grounded through the second switch.

[0030] The present invention also provides a communication device, which includes a radio frequency power amplifier and at least one overvoltage regulation circuit of the radio frequency power amplifier as described above.

[0031] Preferably, the communication device includes a first radio frequency power amplifier, a first overvoltage regulation circuit and a second overvoltage regulation circuit;

[0032] The first overvoltage regulation circuit and the second overvoltage regulation circuit independently generate compensation signals according to the power supply voltage of the first RF power amplifier to adjust the bias circuit of the first RF power amplifier to adjust the working state of the first RF power amplifier.

[0033] Preferably, the communication device includes a second radio frequency power amplifier, a third radio frequency power amplifier, a third overvoltage regulation circuit and a fourth overvoltage regulation circuit;

[0034] The third overvoltage regulation circuit generates a compensation signal according to the power supply voltage of the second RF power amplifier to adjust the bias circuit of the second RF power amplifier, so as to adjust the working state of the second RF power amplifier;

[0035] The fourth overvoltage regulation circuit generates a compensation signal according to the power supply voltage of the third RF power amplifier to regulate the bias circuit of the third RF power amplifier, so as to adjust the working state of the third RF power amplifier.

[0036] The positive progress effect of the present invention is:

[0037] The overvoltage regulation circuit of the RF power amplifier provided by the present invention ensures that the RF power amplifier will not be permanently burned when the power supply has unstable conditions such as voltage overshoot and voltage fluctuation. It also ensures that the RF power amplifier can adaptively meet the performance requirements of the system when the power supply voltage changes. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] To more clearly illustrate the technical solutions of the embodiments of this specification, the following briefly describes the drawings required for describing the embodiments. Obviously, the drawings described below are merely examples or embodiments of this specification. Those skilled in the art can apply this specification to other similar scenarios based on these drawings without inventive effort. Unless otherwise apparent from the context or otherwise noted, the same reference numerals in the figures represent the same structure or operation.

[0039] FIG1 is a first structural diagram of an overvoltage regulation circuit of a radio frequency power amplifier in Embodiment 1 of the present invention.

[0040] FIG2 is a second structural diagram of the overvoltage regulation circuit of the radio frequency power amplifier in Embodiment 1 of the present invention.

[0041] FIG3 is a third structural diagram of the overvoltage regulation circuit of the radio frequency power amplifier in Embodiment 1 of the present invention.

[0042] FIG4 is a schematic diagram of the structure of a level reference network in Embodiment 1 of the present invention.

[0043] FIG5 is a schematic diagram of the structure of the control and regulation network in Example 1 of the present invention.

[0044] FIG6 is a schematic diagram of the structure of the leakage suppression network in Example 1 of the present invention.

[0045] FIG7 is a fourth structural diagram of the overvoltage regulation circuit of the radio frequency power amplifier in Embodiment 1 of the present invention.

[0046] FIG8 is a fifth structural diagram of the overvoltage regulation circuit of the radio frequency power amplifier in Embodiment 1 of the present invention.

[0047] FIG9 is a sixth structural diagram of the overvoltage regulation circuit of the radio frequency power amplifier in Embodiment 1 of the present invention.

[0048] FIG10 is a seventh structural diagram of the overvoltage regulation circuit of the radio frequency power amplifier in Embodiment 1 of the present invention.

[0049] FIG11 is a first structural diagram of a communication device according to the second embodiment of the present invention.

[0050] FIG12 is a second schematic structural diagram of the communication device in the second embodiment of the present invention.

[0051] FIG13 is a third structural diagram of the communication device in the second embodiment of the present invention. DETAILED DESCRIPTION

[0052] The present invention is further described below by way of examples, but the present invention is not limited to the scope of the examples.

[0053] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various places herein does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0054] As used herein, unless the context clearly indicates otherwise, the terms "a," "an," "an," and / or "the" are not intended to refer to the singular but may include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements specifically identified, and these steps and elements do not constitute an exclusive list. A method or apparatus may also include additional steps or elements.

[0055] The definitions of "first" and "second" herein, and the descriptions "first," "second," etc., are provided for illustrative purposes only and are not intended to be sequential or to limit the number of devices herein. They should not be construed as limiting this disclosure. For example, a first element could be referred to as a second element without departing from the scope of this disclosure. Similarly, a second element could be referred to as a first element.

[0056] Example 1

[0057] Please refer to Figure 1, which is a first schematic diagram of the structure of the overvoltage regulation circuit of the RF power amplifier in this embodiment. Specifically, as shown in Figure 1, the overvoltage regulation circuit is coupled to the bias circuit 6 of the RF power amplifier; the overvoltage regulation circuit includes a level reference network 1, a leakage suppression network 2, and a first switch 3.

[0058] One end of the level reference network 1 is coupled to the RF power amplifier's power supply VCC, and the other end is coupled to the control terminal of a first switch 3. This network is used to control the opening of the first switch 3 when a power supply overvoltage is detected. The leakage suppression network 2 is coupled to the first switch 3 at one end and to the bias circuit of the RF power amplifier at the other end. This network is used to generate a compensation signal Icomp to adjust the bias circuit and thus the operating state of the RF power amplifier when the first switch 3 is turned on. Specifically, the RF PA and the level reference circuit use the same DC source, VCC.

[0059] Please refer to Figure 2, which is a second schematic diagram of the overvoltage regulation circuit of the RF power amplifier in this embodiment. Specifically, as shown in Figure 2, the overvoltage regulation circuit also includes a control and regulation network 4 and a second switch 5. One end of the control and regulation network 4 is coupled to the control voltage level VREG, and the other end is coupled to the control terminal of the second switch 5. The first switch 3 and the second switch 5 are connected in series. The control and regulation network 4 is used to adjust the operating state of the overvoltage regulation circuit by controlling the second switch 5. Specifically, the overvoltage regulation circuit in this embodiment enters the operating state (VREG is high) via the control network 4 and the second switch 5. At this time, surge fluctuations in the DC power supply VCC voltage are detected by the level reference network 1 and generated through the first switch 3 and the leakage suppression network 2. A compensation current Icomp is provided to the bias circuit, thereby adjusting the bias of the RF power amplifier, thereby regulating (or completely shutting down) the RF PA, and providing protection for the RF PA against surges or overvoltages on VCC.

[0060] Please refer to Figure 3, which is a third structural diagram of the overvoltage regulation circuit for the RF power amplifier in this embodiment. Specifically, as shown in Figure 3, in this embodiment, the control and regulation network 4 includes a first bias resistor R1; one end of the first bias resistor R1 is coupled to the control level, and the other end is coupled to the control end of the second switch 5. The level reference network 1 is coupled to the DC source VCC at one end and to the base of the transistor device Q1 at the other end; the control and regulation network 4 is coupled to the control level VREG at one end and to the base of the transistor device Q2 at the other end; the leakage suppression network 2 is coupled to the collector of the transistor device Q1 at one end and to the bias circuit of the RF PA at the other end; the bias circuit is coupled to the control level VREG at one end and to the RF PA at the other end; and the RF PA and the level reference circuit use the same DC source VCC.

[0061] In an optional embodiment, the level reference network 1 may include a second bias resistor R2 and several diodes M1…Mn; the second bias resistor R2 and several diodes M1…Mn are connected in series, and the several diodes M1…Mn are used to provide a level reference according to the power supply voltage; in another optional embodiment, the level reference network 1 includes a second bias resistor and at least one transistor; at least one transistor is connected in series with the second bias resistor in the form of a diode, and at least one transistor is used to provide a level reference according to the power supply voltage; in addition, the level reference network 1 may also include a second bias resistor and at least one MOS transistor; at least one MOS transistor is connected in series with the second bias resistor in the form of a diode, and at least one MOS transistor is used to provide a level reference according to the power supply voltage. Please refer to Figure 4, which is a schematic diagram of the structure of the level reference network in this embodiment. Specifically, as shown in Figure 4, the level reference network can adopt any of the structures b, c, or d in Figure 4. Optionally, the resistive device R can be implemented by a linear resistor or discrete SMD resistor (chip resistor) provided by the RF power amplifier semiconductor process or other processes. Optimally, the resistive device R can be implemented by a linear resistor provided by the RF power amplifier semiconductor process. It is worth noting that FIG4 does not limit the implementation of the level reference network to the three forms b, c, or d. Under the guidance of the present invention, those skilled in the art can use other similar circuit structures to implement the level reference network. For example, the positions of R and Dx in the structure b in FIG4 can be swapped, or the order of R and Qx in the structure c in FIG4 can be swapped. Such methods are all within the scope of the present invention.

[0062] In an optional embodiment, the control and regulation network 4 includes a diode N1; a diode N1 is connected in series with the first bias resistor R1, and is used to adjust the conduction amount of the second switch 5; in another optional embodiment, the control and regulation network 4 also includes at least one transistor; at least one transistor is connected in series with the first bias resistor in the form of a diode, and is used to adjust the conduction amount of the second switch 5; in addition, the control and regulation network 4 also includes at least one MOS transistor; at least one MOS transistor is connected in series with the first bias resistor in the form of a diode, and is used to adjust the conduction amount of the second switch 5. Please refer to Figure 5, which is a structural diagram of the control and regulation network in this embodiment. Specifically, as shown in Figure 5, the control and regulation network can adopt any structure of b, c, d or e in Figure 5. Optionally, the resistive device R can be implemented by a linear resistor or discrete SMD resistor provided by the RF power amplifier semiconductor process or other processes. Optimally, the resistive device R can be implemented by a linear resistor provided by the RF power amplifier semiconductor process. It is worth noting that FIG5 does not limit the implementation of the control and regulation network to the three forms b, c, d or e. Those skilled in the art can use other similar circuit structures to complete the control and regulation network under the guidance of the present invention. Such methods all fall within the scope of the guidance of the present invention.

[0063] In an optional embodiment, the leakage suppression network 2 couples the first switch 3 and short-circuits the bias circuit; in another optional embodiment, the leakage suppression network 2 may include a series-connected diode or a series-connected transistor in the form of a diode to prevent current from flowing back to the bias circuit; please refer to Figure 6, which is a structural diagram of the leakage suppression network in this embodiment. Specifically, as shown in Figure 6, the leakage suppression network can adopt any structure of b, c or d in Figure 6. Among them, optionally, the resistive device R can be implemented by a linear resistor or discrete SMD resistor provided by the RF power amplifier semiconductor process or other processes. Optimally, the resistive device R can be implemented by a linear resistor provided by the RF power amplifier semiconductor process. It is worth noting that Figure 6 does not limit the implementation of the leakage suppression network to the three forms of b, c or d. Those skilled in the art can use other similar circuit structures to complete the control and regulation network under the guidance of the present invention. Such methods all fall within the scope of the guidance of the present invention.

[0064] In this embodiment, the first switch 3 includes a first transistor Q1; the base of the first transistor Q1 is coupled to the output end of the level reference network 1, the collector of the first transistor Q1 is coupled to the leakage suppression network 2, and the emitter of the first transistor Q1 is grounded through the second switch 5; the second switch 5 includes a second transistor Q2; the base of the second transistor Q2 is coupled to the output end of the control and regulation network 4, the collector of the second transistor Q2 is connected to the first switch 3, and the emitter of the second transistor Q2 is grounded; in this embodiment, the first transistor Q1 and the second transistor Q2 can respectively be integrated or discrete heterojunction transistors (HBTs) or other process transistors (BJTs) of the RF power amplifier semiconductor process. Optimally, the first transistor Q1 and the second transistor Q2 can use the same RF power amplifier process and use transistors on the same chip to increase the effect of the circuit of the present invention and reduce the cost of the circuit of the present invention.

[0065] Please refer to Figure 7, which is a fourth structural diagram of the overvoltage regulation circuit of the RF power amplifier in this embodiment. Specifically, as shown in Figure 7, in another optional embodiment, the first switch 3 includes a first field effect transistor q1; the gate of the first field effect transistor q1 is coupled to the output end of the level reference network 1, the drain of the first field effect transistor q1 is coupled to the leakage suppression network 2, and the source of the first field effect transistor q1 is grounded through the second switch 5; the second switch 5 includes a second field effect transistor q2; the gate of the second field effect transistor q2 is coupled to the output end of the control and regulation network 4, the drain of the second field effect transistor q2 is connected to the first switch 3, and the source of the second field effect transistor q2 is grounded. The active devices used in this embodiment are not limited to triodes (HBT / BJT, etc.) devices, but can also be field effect transistors, such as CMOS FETs, gallium nitride FETs, etc. Further, the process can also be CMOS, SOI, or SiGe, etc. This embodiment is not limited to this.

[0066] Please refer to Figure 8, which is a fifth structural diagram of the overvoltage regulation circuit of the RF power amplifier in this embodiment. Specifically, as shown in Figure 8, in an optional embodiment, the control and regulation network 4 also includes a signal regulator 41, one end of the signal regulator 41 is coupled to the control end of the second switch 5, and the other end is grounded; the signal regulator 41 is used to adjust the range of the compensation signal. Specifically, on the basis of the above embodiment, a Q4 regulation device is added as an additional part of the control and regulation network of the circuit of the present invention to control the range of Icomp of the circuit of the present invention. Q4 can be a transistor implemented in the form of a diode. Optimally, Q4 can be implemented by a transistor on the same chip as the RF amplifier devices Q1 and Q2, and its area can be adjusted so that the circuit of the present invention can achieve the best effect in regulating the conversion VCC.

[0067] Please refer to Figure 9, which is a sixth structural diagram of the overvoltage regulation circuit of the RF power amplifier in this embodiment. Specifically, as shown in Figure 9, the level reference network 1 also includes a decoupling capacitive device to reduce the interference of potential power supply noise; this embodiment adds decoupling capacitive devices C1 and C2 on the basis of the above embodiment to increase the interference of the circuit of the present invention on potential noise such as VCC. The capacitive devices C1 and C2 can be MiM capacitors (MiM capacitors) or stack capacitors (stack capacitors) provided by the RF power amplifier semiconductor process or other processes, or linear capacitors or parasitic capacitors provided by other processes, or discrete SMD capacitors. Optimally, C1 and C2 can be implemented by capacitive devices on the same chip as the RF amplifier devices Q1 and Q2.

[0068] Please refer to Figure 10, which is a seventh schematic diagram of the overvoltage regulation circuit for an RF power amplifier in this embodiment. Specifically, as shown in Figure 10, leakage suppression network 2 is further configured to generate a voltage compensation signal when first switch 3 is turned on to adjust the bias circuit and thereby regulate the operating state of the RF power amplifier. This embodiment, building on the previous embodiment, utilizes resistor R3 between VREG and the bias circuit to convert the compensation current Icomp generated by the present circuit into a voltage compensation signal. This signal controls or adjusts the bias current of the RF PA, thereby regulating or shutting off the RF PA's bias current to protect the RF PA or achieve optimal operating conditions based on changes in VCC.

[0069] The overvoltage regulation circuit of the RF power amplifier provided in this embodiment ensures that the RF power amplifier will not be permanently burned when the power supply has unstable conditions such as voltage overshoot and voltage fluctuation. It also ensures that the RF power amplifier can adaptively meet the performance requirements of the system when the power supply voltage changes.

[0070] Example 2

[0071] This embodiment provides a communication device, which includes a radio frequency power amplifier and at least one overvoltage regulation circuit of the radio frequency power amplifier in embodiment 1.

[0072] Please refer to Figure 11, which is a first structural diagram of the communication device in this embodiment. Specifically, as shown in Figure 11, in an optional embodiment, the communication device includes a first RF power amplifier 201, a first overvoltage regulation circuit 21, and a second overvoltage regulation circuit 22. The first overvoltage regulation circuit 21 and the second overvoltage regulation circuit 22 independently generate compensation signals based on the power supply voltage of the first RF power amplifier to adjust the bias circuit of the first RF power amplifier 201 to adjust the operating state of the first RF power amplifier.

[0073] Specifically, this embodiment combines the implementations of Example 1. The first overvoltage regulation circuit 21 and the second overvoltage regulation circuit 22 each generate two independently operating compensation currents, Icompa and Icompb, to adjust the RF PA bias at different levels. This multi-dimensionally adjusts or shuts down the RF PA bias current, protecting the RF PA or ensuring optimal operation based on VCC variations. This enables this embodiment to handle RF PA protection and regulation in more complex VCC variation environments.

[0074] In another optional embodiment, the communication device includes a second RF power amplifier 202, a third RF power amplifier 203, a third overvoltage regulation circuit 23 and a fourth overvoltage regulation circuit 24; the third overvoltage regulation circuit 23 generates a compensation signal according to the power supply voltage of the second RF power amplifier 202 to adjust the bias circuit of the second RF power amplifier 202, so as to adjust the working state of the second RF power amplifier 202; the fourth overvoltage regulation circuit 24 generates a compensation signal according to the power supply voltage of the third RF power amplifier 203 to adjust the bias circuit of the third RF power amplifier, so as to adjust the working state of the third RF power amplifier 203.

[0075] Please refer to Figure 12, which is a second structural diagram of the communication device in this embodiment. Specifically, as shown in Figure 12, the second RF power amplifier 202 can be the driver stage of the RF power amplifier, and the third RF power amplifier 203 can be the output stage of the RF power amplifier. The driver stage and the output stage are coupled in series. The third overvoltage regulation circuit 23 protects or regulates power surges or overvoltages of the driver stage of the RF power amplifier, and the fourth overvoltage regulation circuit 24 protects or regulates power surges or overvoltages of the output stage of the amplifier, thereby protecting or regulating power surges or overvoltages of the entire amplifier. It should be noted that the RF power amplifier in this embodiment is not limited to two stages: it can also be three stages or other numbers of stages.

[0076] Please refer to Figure 13, which is a third structural diagram of the communication device in this embodiment. Specifically, as shown in Figure 13, the second RF power amplifier 202 can be the driver stage of the RF power amplifier, and the third RF power amplifier 203 can be the output stage of the RF power amplifier. The driver stage and the output stage are coupled in parallel. The third overvoltage regulation circuit 23 protects or regulates power surges or overvoltages of the driver stage of the RF power amplifier, and the fourth overvoltage regulation circuit 24 protects or regulates power surges or overvoltages of the output stage of the amplifier, thereby protecting or regulating power surges or overvoltages of the entire amplifier. It should be noted that the RF power amplifier in this embodiment is not limited to two stages: it can also be three stages or other numbers of stages.

[0077] Although specific embodiments of the present invention have been described above, those skilled in the art will appreciate that these are merely illustrative and that the scope of the present invention is defined by the appended claims. Those skilled in the art may make various changes or modifications to these embodiments without departing from the principles and essence of the present invention, and such changes and modifications are intended to fall within the scope of the present invention.

Claims

1. An overvoltage regulation circuit for a radio frequency power amplifier, characterized in that, The overvoltage regulation circuit is coupled to the bias circuit of the radio frequency power amplifier; the overvoltage regulation circuit includes a level reference network, a leakage suppression network, and a first switch; One end of the level reference network is coupled to the power supply of the radio frequency power amplifier, and the other end is coupled to the control terminal of the first switch, and is configured to control the first switch to turn on when detecting that the power supply is overvoltage; One end of the leakage suppression network is coupled to the first switch, and the other end is coupled to the bias circuit of the radio frequency power amplifier, and is configured to generate a compensation signal to adjust the bias circuit when the first switch is turned on, so as to adjust the operating state of the radio frequency power amplifier.

2. The overvoltage regulation circuit according to claim 1, wherein The overvoltage regulation circuit further includes a control regulation network and a second switch; One end of the control regulation circuit is coupled to a control level, and the other end is coupled to the control terminal of the second switch; the first switch is connected in series with the second switch; The control regulation circuit is configured to adjust the operating state of the overvoltage regulation circuit by controlling the second switch.

3. The overvoltage regulation circuit according to claim 2, characterized in that The control regulation network includes a first bias resistor; one end of the first bias resistor is coupled to the control level, and the other end is coupled to the control terminal of the second switch.

4. The overvoltage regulation circuit according to claim 3, wherein The control regulation network further includes at least one diode; the at least one diode is connected in series with the first bias resistor and is configured to adjust the conduction amount of the second switch; and / or, The control regulation network further includes at least one triode; the at least one triode is connected in series with the first bias resistor in the form of a diode and is configured to adjust the conduction amount of the second switch; and / or, The control regulation network further includes at least one MOS transistor; the at least one MOS transistor is Connected in series with the first bias resistor in the form of a diode and is configured to adjust the conduction amount of the second switch.

5. The overvoltage regulation circuit according to claim 2, characterized in that, The second switch includes a second triode; the base of the second triode is coupled to the output terminal of the control regulation network, the collector of the second triode is connected to the first switch, and the emitter of the second triode is grounded; and / or, The second switch includes a second field effect transistor; the gate of the second field effect transistor is coupled to the output terminal of the control regulation network, the drain of the second field effect transistor is connected to the first switch, and the source of the second triode is grounded; and / or, The control regulation network further includes a signal regulator, one end of the signal regulator is coupled to the control terminal of the second switch, and the other end is grounded; The signal regulator is configured to adjust the range of the compensation signal.

6. The overvoltage regulation circuit according to claim 1, characterized in that, The level reference network includes a second bias resistor and at least one diode; the second bias resistor and the at least one diode are connected in series, and the at least one diode is configured to provide a level reference according to the power supply voltage; and / or, The level reference network includes a second bias resistor and at least one triode; the at least one triode is connected in series with the second bias resistor in the form of a diode, and the at least one triode is configured to provide a level reference according to the power supply voltage; and / or, The level reference network includes a second bias resistor and at least one MOS transistor; the at least one MOS transistor is connected in series with the second bias resistor in the form of a diode, and the at least one MOS transistor is used to provide a level reference according to the power supply voltage.

7. The overvoltage regulation circuit according to claim 1, characterized in that, The leakage suppression network short-circuits the first switch coupling and the bias circuit; and / or, The leakage suppression network includes a series-connected diode or a triode connected in series in the form of a diode to prevent current from flowing back to the bias circuit; and / or, The level reference network further includes a decoupling capacitive device to reduce the interference of potential power supply noise; and / or, The leakage suppression network is further specifically configured to generate a voltage compensation signal to adjust the bias circuit when the first switch is turned on, so as to adjust the operating state of the radio frequency power amplifier.

8. The overvoltage regulation circuit according to claim 5, wherein, The first switch includes a first triode; the base of the first triode is coupled to the output terminal of the level reference network, the collector of the first triode is coupled to the leakage suppression network, and the emitter of the first triode is grounded through the second switch; and / or, The first switch includes a first field effect transistor; the gate of the first field effect transistor is coupled to the output terminal of the level reference network, the drain of the first field effect transistor is coupled to the leakage suppression network, and the source of the first field effect transistor is grounded through the second switch.

9. A communication device, characterized in that, The communication device includes at least one radio frequency power amplifier and at least one overvoltage regulation circuit of the radio frequency power amplifier according to any one of claims 1-8.

10. The communication device according to claim 9, wherein, The communication device includes a first radio frequency power amplifier, a first overvoltage regulation circuit, and a second overvoltage regulation circuit; The first overvoltage regulation circuit and the second overvoltage regulation circuit independently generate compensation signals according to the power supply voltage of the first radio frequency power amplifier to adjust the bias circuit of the first radio frequency power amplifier, so as to adjust the operating state of the first radio frequency power amplifier.

11. The communication device according to claim 9, characterized in that, The communication device includes a second radio frequency power amplifier, a third radio frequency power amplifier, a third overvoltage regulation circuit, and a fourth overvoltage regulation circuit; The third overvoltage regulation circuit generates a compensation signal according to the power supply voltage of the second radio frequency power amplifier to adjust the bias circuit of the second radio frequency power amplifier, so as to adjust the operating state of the second radio frequency power amplifier; The fourth overvoltage regulation circuit generates a compensation signal according to the power supply voltage of the third radio frequency power amplifier to adjust the bias circuit of the third radio frequency power amplifier, so as to adjust the operating state of the third radio frequency power amplifier.

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