Substrate processing apparatus

Abstract

A substrate processing apparatus, comprising: an RF power supply (100), which comprises a high-frequency RF power supply (111) and a low-frequency RF power supply (121); an upper electrode (200) coupled to the RF power supply (100); a lower electrode (300), which comprises a plurality of electrode partitions, the RF power supply (100) applying power to the plurality of electrode partitions by means of the upper electrode; a power measurement module, which is used for measuring a high-frequency power and a low-frequency power applied by the high-frequency RF power supply (111) and the low-frequency RF power supply (121) to each electrode partition; and an electrode impedance adjustment module, which is used for adjusting high-frequency impedance and low-frequency impedance from each electrode partition to a ground terminal on the basis of a measurement signal from the power measurement module.

Description

Substrate processing equipment Technical Field

[0001] The present invention belongs to the technical field of semiconductors and relates to a substrate processing device. Background Art

[0002] Semiconductor substrate processing equipment is used to process semiconductor substrates using techniques including plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PEALD), and plasma-enhanced pulsed deposition layer (PEPDL). One type of semiconductor substrate processing equipment is a plasma processing apparatus that includes a reaction chamber containing upper and lower electrodes, wherein radio frequency (RF) power is applied between the electrodes to excite a process gas into a plasma for processing the semiconductor substrate in the reaction chamber.

[0003] During substrate processing, such as PECVD, ion bombardment is a significant factor in inducing stress on the substrate. Excessive localized stress often leads to high substrate warpage. Furthermore, uneven factors such as airflow, temperature, and plasma distribution can lead to uneven film quality and thickness, resulting in poor film uniformity across the substrate surface. Conventional substrate processing equipment cannot precisely control and address these issues.

[0004] Therefore, it is necessary to provide a new substrate processing device. Summary of the Invention

[0005] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a substrate processing device for solving the problem that the substrate processing device in the prior art cannot be accurately controlled and adjusted.

[0006] To achieve the above-mentioned and other related purposes, a substrate processing apparatus includes:

[0007] RF power supply, including high-frequency RF power supply and low-frequency RF power supply;

[0008] an upper electrode coupled to the RF power source;

[0009] a lower electrode comprising a plurality of electrode partitions, wherein the RF power supply applies power to the plurality of electrode partitions respectively through the upper electrode;

[0010] a power detection module, configured to detect the high-frequency power and the low-frequency power applied to each electrode partition by the high-frequency RF power source and the low-frequency RF power source;

[0011] The electrode impedance adjustment module is used to adjust the high-frequency impedance and low-frequency impedance of each electrode partition to the ground end according to the detection signal of the power detection module.

[0012] Optionally, in different processes of processing a substrate by the substrate processing device or different stages of the same process, the electrode impedance adjustment module is configured to adjust the impedance value of the high-frequency impedance and / or low-frequency impedance from the lower electrode to the ground end so that the first current applied by the RF power supply to the upper electrode is switched to the second current.

[0013] Optionally, the electrode impedance adjustment module is configured to adjust the impedance value of the high-frequency impedance or the low-frequency impedance of at least one electrode partition to the ground end.

[0014] Optionally, the electrode impedance adjustment module is configured to respectively adjust the impedance values ​​of the high-frequency impedance and the low-frequency impedance of at least one electrode partition to the ground end.

[0015] Optionally, the electrode impedance adjustment module includes a high-frequency impedance adjustment circuit and a low-frequency impedance adjustment circuit, and both the high-frequency impedance adjustment circuit and the low-frequency impedance adjustment circuit include capacitors and / or inductors.

[0016] Optionally, the capacitor and / or the inductor are adjustable.

[0017] Optionally, each electrode partition is coupled to the electrode impedance adjustment module via a switch, and the switch is used to control the on and off of each electrode partition.

[0018] Optionally, the lower electrode is divided into equal parts.

[0019] Optionally, the lower electrode includes an inner electrode and at least one outer electrode surrounding the inner electrode, and the inner electrode and the outer electrode constitute the electrode partition.

[0020] Optionally, there are multiple outer electrodes, and the multiple outer electrodes are arranged in sequence and spaced apart from the outer edge of the inner electrode radially outward.

[0021] Optionally, the inner electrode and / or at least one outer electrode are divided equally.

[0022] Optionally, the electrode impedance adjustment module includes multiple impedance adjustment circuits, each of which includes a high-frequency impedance circuit and a low-frequency impedance circuit connected in parallel, which are respectively used to adjust the high-frequency impedance and low-frequency impedance of each electrode partition to the ground end.

[0023] Optionally, the power detection module includes voltage and current sensors.

[0024] As described above, the substrate processing device of the present invention can apply radio frequency power to each electrode partition corresponding to the local area of ​​the substrate separately by dividing the lower electrode into electrode partitions, and can adjust the high-frequency impedance and low-frequency impedance of each electrode partition to the ground end to achieve separate adjustment of the high-frequency power and low-frequency power applied to each electrode, so that the adjustment of the substrate processing device is more precise, and the film forming properties of the local area of ​​the substrate can be adjusted, thereby optimizing the uniformity of the substrate surface film.

[0025] Summary of the Figures

[0026] The features and properties of the present invention are further described by the following examples and accompanying drawings.

[0027] FIG1 is a schematic structural diagram of an embodiment of a substrate processing apparatus according to the present invention.

[0028] FIG2 is a schematic structural diagram of another embodiment of a substrate processing apparatus according to the present invention.

[0029] 3( a ) to 3 ( c ) are schematic diagrams of the present invention in which the outer electrodes are one, two, and three ring-shaped electrodes, respectively.

[0030] 4( a ) to 4 ( c ) are schematic diagrams of specific implementations of the present invention in which the inner electrode is divided into two equal parts, three equal parts, and four equal parts.

[0031] FIG5 is a schematic diagram of another embodiment of the present invention in which the inner electrode is a three-equally divided electrode.

[0032] FIG6 is a schematic diagram showing the lower electrode being divided into two equal parts in the present invention.

[0033] Preferred embodiments of the present invention

[0034] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present invention.

[0035] For example, when describing the embodiments of the present invention, cross-sectional views of device structures may be partially enlarged to scale for ease of explanation. Furthermore, these schematic views are merely illustrative and should not limit the scope of the present invention. Furthermore, in actual manufacturing, three-dimensional dimensions, including length, width, and depth, should be included.

[0036] For ease of description, spatially relative terms such as "under," "beneath," "lower," "below," "below," "above," "upper," and the like may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatially relative terms are intended to encompass orientations of the device in use or operation in addition to the orientation depicted in the drawings. Additionally, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present. As used herein, "between" is inclusive of both endpoints.

[0037] In the context of the present application, a structure described as a first feature being "above" a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where an additional feature is formed between the first and second features, such that the first and second features may not be in direct contact.

[0038] It should be noted that the diagrams provided in this embodiment are merely schematic illustrations of the basic concepts of the present invention. Therefore, the diagrams only show components relevant to the present invention and are not drawn according to the number, shape, and size of components in actual implementation. In actual implementation, the type, quantity, and ratio of each component can be arbitrarily varied, and the component layout can be more complex. Although the substrate processing apparatus described below is in the context of plasma-enhanced chemical vapor deposition, the substrate processing apparatus and the partitioned power control method can be applied to other types of plasma processing chambers, such as atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PEALD), plasma-enhanced pulsed deposition layer (PEPDL), and other plasma systems requiring plasma tuning.

[0039] As shown in FIG1 , this embodiment provides a substrate processing device for performing plasma-enhanced atomic layer deposition on a substrate. The substrate processing device includes an RF power supply 100, an upper electrode 200 coupled to the RF power supply 100, and a substrate support 800 for supporting a substrate W. In one embodiment, the upper electrode 200 also serves as a showerhead for supplying process gas, through which the process gas enters the substrate processing device. The substrate support 800 can be formed of a ceramic material, with its upper surface used to support the substrate W. The lower electrode 300 is embedded in the substrate support 800 (for the specific design of the lower electrode 300, please refer to FIG3 to FIG5 ). The RF power supply 100 outputs current to the upper electrode 200, and the lower electrode 300 is coupled to the upper electrode 200, forming an RF electric field between the upper and lower electrodes for exciting the process gas to form a plasma and deposit a thin film on the substrate surface. The lower electrode 300 includes a plurality of electrode partitions, each of which is coupled to an electrode impedance adjustment module via a power detection module, and the electrode impedance adjustment module is grounded. The power detection module includes multiple sensors 500, and the electrode impedance adjustment module includes multiple impedance adjustment circuits 400. The multiple impedance adjustment circuits 400 are respectively used to adjust the impedance from each electrode partition to the ground end to adjust the radio frequency power applied to each electrode partition.

[0040] The RF power supply 100 applies power to the lower electrode 300 through the upper electrode 200 to generate and maintain a plasma between the upper and lower electrodes. The RF power supply 100 includes a high-frequency RF power supply 111 and a low-frequency RF power supply 121. Figure 1 shows a specific embodiment of the RF power supply 100 including the high-frequency RF power supply 111 and the low-frequency RF power supply 121. The high-frequency RF power supply 111 is coupled to the upper electrode 200 via a matching network 112, and the low-frequency RF power supply 121 is coupled to the upper electrode 200 via a matching network 122. This RF power supply configuration allows the high-frequency RF power supply and the low-frequency RF power supply to apply power to the upper electrode 200 through matching networks of corresponding frequencies, according to process requirements, to excite the process gas to form a plasma. The high-frequency RF power supply applies a higher frequency than the low-frequency RF power supply. During operation, it is preferred that the frequency ranges of the high-frequency and low-frequency power supplies do not overlap. That is, the low frequency RF power source 121 always operates at a frequency lower than that of the high frequency RF power source 111. For example, the frequencies of commonly used high frequency RF power sources are 13.56 MHZ and 27.12 MHZ, while the frequencies of low frequency RF power sources are 370 kHz and 400 kHz.

[0041] A lower electrode 300 is provided in the substrate support 800. For the specific structure of the lower electrode, please refer to Figures 3 to 6. The lower electrode 300 is a metal wire mesh and can be formed of aluminum, copper or other conductive metal materials. The lower electrode is divided into multiple regions according to the spacing between different regions, so that the lower electrode is divided into multiple electrode regions, and the multiple electrode regions are spaced and insulated from each other. Exemplarily, in one embodiment, the lower electrode is divided into multiple electrode regions, such as the lower electrode is divided into two equal parts in Figure 6. In other embodiments not shown, the lower electrode can be divided into other equal parts, such as three equal parts, four equal parts, etc. In another embodiment, the lower electrode is divided into an inner electrode and an outer electrode according to the regions of the inner electrode and the outer electrode. In further other embodiments, the inner electrode and / or at least one outer electrode is further divided into multiple inner electrode regions and multiple outer electrode regions according to different regions. Exemplarily, the lower electrode 300 includes an inner electrode and at least one outer electrode surrounding the inner electrode. The outer electrode includes at least one of a first outer electrode and a second outer electrode, wherein the outer electrode that is not divided equally is the first outer electrode, and the outer electrode that is divided equally is the second outer electrode, as shown in Figures 3 to 5. For example, the lower electrodes 310, 320, 330, 340, 350, 360, and 370 include first outer electrodes 312, 322, 332, 342, 351, 361, and 371, respectively. Referring to Figure 5, the second outer electrode 374 is divided equally into a plurality of outer electrode partitions. The number of first outer electrodes is at least one. If the number of first outer electrodes is multiple, the multiple first outer electrodes can be arranged radially outward from the outer edge of the inner electrode in sequence. For example, in the lower electrode 310 in Figure 3 (a), one first outer electrode 312 is arranged radially outward from the outer edge of the inner electrode 311, and a gap (not marked) is left between the first outer electrode 312 and the inner electrode 311. In another embodiment, such as the lower electrodes 320 and 330 in 3(b)-3(c), a plurality of first outer electrodes 322 and 332 are arranged radially outward from the outer edge of the inner electrode. In the same lower electrode, the first outer electrode and the second outer electrode can be freely combined, including at least one first outer electrode and / or at least one second outer electrode. For example, in one embodiment, such as in FIG5 , the lower electrode 370 has one first outer electrode 371 and one second outer electrode 374. In other embodiments not shown, the first outer electrode and the second outer electrode can also have other combinations. In one combination, for example, the lower electrode includes a plurality of first outer electrodes 371 and a second outer electrode 374, and the plurality of first outer electrodes are arranged radially outward from the outer edge of the second outer electrode. In another combination, the lower electrode includes a plurality of second outer electrodes but does not include a first inner electrode. In this case, the plurality of second outer electrodes are arranged radially outward from the outer edge of the inner electrode.In another combination, the lower electrode includes a plurality of first outer electrodes and a plurality of second outer electrodes, the plurality of first outer electrodes are arranged radially outward from the outer edge of the inner electrode, and the plurality of second outer electrodes are arranged radially outward from the outermost outer edge of the plurality of first outer electrodes. There are other combinations that are not listed one by one. The inner electrode can be divided into equal parts or not. For example, the inner electrodes 311, 321, and 331 in Figure 3 are not divided into equal parts, and the inner electrodes 341, 352, 362, and 372 in Figures 4 and 5 are divided into inner electrode partitions. The gaps between the electrode partitions of the lower electrodes 310, 320, and 330 in Figures 3 and 5 are shown in the figures, while the gaps between the electrode partitions of the lower electrodes 340, 350, and 360 in Figure 4 are not shown in the figure.

[0042] The lower electrode also has a connecting portion, which passes through the gap formed by the inner electrode partitions and extends to the inner edge of the outer electrode. As shown in Figure 4(a), the connecting portion 343 passes through the gap between the two inner electrode partitions of the inner electrode 341 (not shown), and both ends extend to the inner edge of the outer electrode 342 without contacting the inner electrode 341. As shown in Figure 4(b), the connecting portion 353 extends from the central area 354 through the gaps formed by the three inner electrode partitions (the gaps are not shown) to the inner edge of the outer electrode 351. As shown in Figure 4(c), the connecting portion 364 extends from the central area 363 through the gaps formed by the four inner electrode partitions of the inner electrode 362 to the inner edge of the outer electrode 361. As shown in Figure 5, the first connecting portion 375 extends from the central area 376 through the gaps formed by the three inner electrode partitions to the inner edge of the first outer electrode 371, and the second connecting portion 373 extends from the central area 376 through the gaps formed by the three inner electrode partitions to the inner edge of the second outer electrode 374. The central area can be specifically described as not exceeding one-third of the circular radius determined by the outer edge of the inner electrode. By setting a connecting portion connecting the central area to the inner edge of the outer electrode, it is convenient to electrically connect the inner electrode and the outer electrode to the impedance adjustment circuit 400 within the limited space of the central area.

[0043] In one embodiment, the lower electrode is divided equally into multiple electrode partitions, and an ESC (electrostatic chuck) voltage can be applied simultaneously to the multiple electrode partitions to generate an electrostatic adsorption effect on the substrate. As shown in Figure 6, the lower electrode 380 includes two equally divided electrode partitions, and the ESC voltage is applied simultaneously to the two electrode partitions to generate an electrostatic adsorption effect on the substrate. In another embodiment, the lower electrode includes an inner electrode and an outer electrode, the outer electrode includes at least one first outer electrode and / or at least one second outer electrode, and the inner electrode is a whole or divided equally into multiple inner electrode partitions. The ESC voltage can be applied to the inner electrode without applying it to the outer electrode to generate an electrostatic adsorption effect on the substrate. When the inner electrode is divided equally into multiple inner electrode partitions and spaced apart from each other, the ESC voltage can be applied simultaneously to the multiple inner electrode partitions to generate an electrostatic adsorption effect on the substrate. For example, in Figure 4(a), the lower electrode 340 includes two inner electrode partitions, and the ESC voltage application circuit 700 applies the ESC voltage to the two inner electrode partitions simultaneously, as shown in the schematic diagram of Figure 2. In another embodiment, the inner electrode is integral, and the ESC voltage application circuit 700 applies an ESC voltage to one inner electrode to generate electrostatic attraction to the substrate. For example, in Figure 3(a), the ESC voltage is applied to the inner electrode 311 of the lower electrode 310 as shown in Figure 1. The ESC voltage application circuit 700 is coupled to the inner electrode and ground. In one embodiment, the ESC voltage application circuit 700 can be connected between the inner electrode and the impedance adjustment circuit. In another embodiment, the ESC voltage application circuit 700 can also be connected to the impedance adjustment circuit 400, as described in detail below.

[0044] The impedance adjustment circuit module includes at least one impedance adjustment circuit 400, which is used to regulate the impedance of at least one of the multiple electrode sections of the lower electrode to the ground terminal, thereby adjusting the power applied to the at least one electrode section by the high-frequency RF power supply 111 and / or the high-frequency RF power supply 111 and the low-frequency RF power supply 121. The impedance adjustment circuit 400 includes a high-frequency impedance adjustment circuit 410 or a high-frequency impedance adjustment circuit 410 and a low-frequency impedance adjustment circuit 420. The high-frequency impedance adjustment circuit 410 adjusts the high-frequency impedance of the electrode section to the ground terminal to adjust the high-frequency power applied to the electrode section by the high-frequency RF power supply 111. The low-frequency impedance adjustment circuit 420 adjusts the low-frequency impedance of the electrode section to the ground terminal to adjust the low-frequency power applied to the electrode section by the low-frequency RF power supply 121. The high-frequency impedance adjustment circuit 410 and the low-frequency impedance adjustment circuit 420 each include at least one of an inductor and a capacitor. Specifically, the high-frequency impedance adjustment circuit 410 includes an inductor 411 and a capacitor 412, and the low-frequency impedance adjustment circuit 420 includes an inductor 421 and a capacitor 422. The ESC voltage application circuit 700 is coupled between the inductor 421 and the capacitor 422 of the low-frequency impedance adjustment circuit 420. The ESC voltage application circuit 700 applies a voltage to the lower electrode through the inductor 421 to generate an electrostatic adsorption effect on the substrate. In various embodiments, at least one capacitor and / or inductor is adjustable, thereby allowing the impedance of each electrode partition to the ground end to be adjustable. Each electrode partition of the lower electrode is respectively coupled to a high-frequency impedance adjustment circuit and a low-frequency impedance adjustment circuit connected in parallel with each other. The high-frequency impedance adjustment circuit and the low-frequency impedance adjustment circuit are both grounded separately. The high-frequency impedance adjustment circuit only passes high-frequency current, and the low-frequency impedance adjustment circuit only passes low-frequency current, achieving high- and low-frequency current separation, and both high- and low-frequency RF power are adjustable. The high- and low-frequency impedance adjustment circuits adjust the impedance of the electrode partition to the ground end by adjusting the inductor and / or capacitor.

[0045] A switch 600 is coupled between each electrode partition and the impedance adjustment circuit 400. Each switch 600 is used to control whether the high-frequency RF power source 111 and the low-frequency RF power source 121 apply power to the electrode partition. In one embodiment, each impedance adjustment circuit 400 is coupled to each electrode partition via a switch 600. Each switch 600 controls whether the high-frequency RF power source 111 and the low-frequency RF power source 121 apply power to the corresponding electrode partition, as shown in Figures 1 and 2. During the PECVD process, if the film thickness of the substrate region corresponding to the outer electrode is thicker than that of the substrate region corresponding to the inner electrode, as shown in Figure 2, the switch 600 corresponding to the outer electrode can be opened, thereby opening the circuit between the outer electrode and the impedance adjustment circuit, and the high-frequency RF power source 111 and the low-frequency RF power source 121 do not apply power to the outer electrode.

[0046] The power detection module is used to detect the high-frequency power and low-frequency power applied to each electrode partition by the high-frequency RF power source and the low-frequency RF power source. The power detection module includes multiple sensors 500. Each electrode partition of the lower electrode is coupled to each impedance adjustment circuit 400 via a one-to-one corresponding sensor 500. Each sensor 500 is used to simultaneously measure the current output by both the high-frequency RF power source 111 and the low-frequency RF power source 121 in the same electrode partition to monitor the high-frequency RF power and low-frequency RF power applied to each electrode partition. The sensors 500 can be voltage and current sensors (e.g., V / I sensors), as shown in Figures 1 and 2. In one embodiment, the current output by the RF power source to the upper electrode remains constant throughout the entire process, such as PECVD. In another embodiment, during different processes or different stages of the same process, the electrode impedance adjustment module adjusts the high-frequency impedance and / or low-frequency impedance of at least one of the multiple electrode partitions to ground to switch the first current applied to the upper electrode by the high-frequency RF power source and the low-frequency RF power source to a second current. For example, if the stress of a certain electrode partition is too high during the same PECVD process, the low-frequency impedance of the corresponding electrode partition is adjusted. The low-frequency impedance value is increased while the high-frequency impedance value remains unchanged, thereby weakening the ion bombardment of the electrode partition and reducing the stress without affecting the high-frequency impedance. The film thickness is minimally affected, thereby optimizing the uniformity of the film on the substrate surface. In other embodiments, the high-frequency impedance value corresponding to the same electrode partition can also be adjusted while the low-frequency impedance value remains unchanged. In yet another embodiment, the impedance values ​​of the high-frequency impedance and low-frequency impedance corresponding to the same electrode partition can also be adjusted simultaneously. For example, in different PECVD processes, silicon nitride and silicon oxide are alternately formed on the substrate surface, and the high-frequency impedance and low-frequency impedance corresponding to the same electrode partition need to be adjusted simultaneously.

[0047] During plasma processing of a substrate, when adjusting the plasma in a localized area of ​​the substrate (e.g., adjusting the plasma density or velocity), the applied RF voltage / current of the electrode subarea corresponding to the localized area of ​​the substrate can be individually controlled. By adjusting the high and low frequency impedance between each electrode subarea and the ground terminal, the high and low frequency power applied to each electrode subarea can be individually adjusted. This allows for adjustment of the film formation properties (e.g., film formation rate, film thickness, etc.) of the localized area of ​​the substrate, thereby optimizing the uniformity of the film on the substrate surface. For example, when the stress on the outer ring of the substrate is relatively high, the capacitor and / or inductor in the low-frequency impedance adjustment circuit of the outer electrode corresponding to the outer ring of the substrate is adjusted to increase the low-frequency impedance of the outer electrode, thereby weakening ion bombardment and reducing the stress on the outer ring of the substrate. This does not affect the power applied to the outer electrode by the high-frequency power supply, and the thickness of the thin film deposited on the substrate surface is not affected.

[0048] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A substrate processing device, characterized in that: include: RF power supply, including high frequency RF power supply and low frequency RF power supply; an upper electrode coupled to the RF power source; A lower electrode, comprising a plurality of electrode partitions, wherein the RF power source applies power to the plurality of electrode partitions respectively through the upper electrode; A power detection module, used to detect the high-frequency power and the low-frequency power applied to each electrode partition by the high-frequency RF power source and the low-frequency RF power source; The electrode impedance adjustment module is used to adjust the high-frequency impedance and low-frequency impedance of each electrode partition to the ground end according to the detection signal of the power detection module.

2. The substrate processing device according to claim 1, characterized in that: In different processes of processing a substrate by the substrate processing device or different stages of the same process, the electrode impedance adjustment module is configured to adjust the impedance value of the high-frequency impedance and / or low-frequency impedance from the lower electrode to the ground terminal so that the first current applied by the RF power supply to the upper electrode is switched to the second current.

3. The substrate processing device according to claim 2, characterized in that: The electrode impedance adjustment module is configured to adjust the impedance value of the high-frequency impedance or the low-frequency impedance of at least one electrode partition to the ground end.

4. The substrate processing device according to claim 2, characterized in that: The electrode impedance adjustment module is configured to respectively adjust the impedance values ​​of the high-frequency impedance and the low-frequency impedance of at least one electrode partition to the ground end.

5. The substrate processing apparatus according to claim 1, characterized in that: The electrode impedance adjustment module includes a high-frequency impedance adjustment circuit and a low-frequency impedance adjustment circuit, and both the high-frequency impedance adjustment circuit and the low-frequency impedance adjustment circuit include capacitors and / or inductors.

6. The substrate processing device according to claim 5, characterized in that: The capacitor and / or the inductor are adjustable.

7. The substrate processing apparatus according to claim 1, characterized in that: Each electrode partition is respectively coupled to the electrode impedance adjustment module via a switch, and the switch is used to control the on and off of each electrode partition.

8. The substrate processing apparatus according to claim 1, wherein: The lower electrode is equally divided.

9. The substrate processing apparatus according to claim 1, characterized in that: The lower electrode includes an inner electrode and at least one outer electrode surrounding the inner electrode, and the inner electrode and the outer electrode form the electrode partition.

10. The substrate processing apparatus according to claim 9, characterized in that: There are a plurality of outer electrodes, and the plurality of outer electrodes are arranged in sequence and spaced apart from the outer edge of the inner electrode radially outward.

11. The substrate processing apparatus according to claim 9, characterized in that: The inner electrode and / or at least one outer electrode are divided equally.

12. The substrate processing apparatus according to claim 1, characterized in that: The electrode impedance adjustment module includes a plurality of impedance adjustment circuits, each of which includes a high-frequency impedance circuit and a low-frequency impedance circuit connected in parallel, and is used to adjust the high-frequency impedance and low-frequency impedance of each electrode partition to the ground end.

13. The substrate processing apparatus according to claim 1, characterized in that: The power detection module includes voltage and current sensors.

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