Upper electrode structure, semiconductor process chamber, and semiconductor process device

Abstract

An upper electrode structure, a semiconductor process chamber, and a semiconductor process device. The upper electrode structure comprises: an upper electrode assembly (10) configured to be arranged at the top of a semiconductor process chamber; and a magnetic assembly (20) arranged above the upper electrode assembly (10), wherein the magnetic assembly (20) comprises at least two coil groups (21), and the at least two coil groups (21) are arranged in the vertical direction; each coil group (21) comprises a first coil (211) and at least one second coil (212), the at least one second coil (212) is sequentially nested, the innermost second coil (212) is nested on the outer side of the first coil (211), and each second coil (212) and the first coil (211) independently receive direct current power supply. The magnetic assembly (20) is divided into a plurality of layers in the axial direction and is divided into a plurality of areas in the radial direction, and whether a voltage is applied to the coil in each area of each layer can be independently controlled, so that the radial distribution of plasma can be accurately regulated and controlled, the uniformity of the plasma is improved, the spatial reuse rate of the upper electrode structure can be improved, and the cost of a machine is reduced.

Description

Upper electrode structure, semiconductor process chamber and semiconductor process equipment Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to an upper electrode structure, a semiconductor process chamber, and semiconductor process equipment. Background Art

[0002] Dry etching is an increasingly important step in integrated circuit (IC) manufacturing. As IC feature sizes continue to decrease, dry etching accounts for an increasing proportion of production lines. A traditional capacitively coupled plasma (CCP) process chamber consists of opposing upper and lower electrodes. RF power is applied to the lower electrode, with the upper electrode acting as only one plate of a capacitor. After the process gas enters the chamber from the upper electrode, it discharges and ionizes through the upper and lower electrodes to form a plasma, which then bombards the wafer surface, etching it.

[0003] Generally speaking, the more uniform the plasma distribution, the better the etching uniformity. Traditional process chambers can only improve plasma uniformity through structural dimensions and installation accuracy, but the improvement effect is limited and has significant limitations in application. Summary of the Invention

[0004] In response to the above technical problems, the present application provides an upper electrode structure, a semiconductor process chamber and a semiconductor process equipment, which can improve the problem that the existing semiconductor process chamber can only improve the plasma uniformity through structural size and installation accuracy, resulting in limited improvement effect.

[0005] To solve the above technical problems, in a first aspect, embodiments of the present application provide an upper electrode structure for use in a semiconductor process chamber, the upper electrode structure comprising:

[0006] an upper electrode assembly, configured to be disposed on the top of the semiconductor process chamber;

[0007] A magnetic assembly is disposed above the upper electrode assembly, the magnetic assembly comprising at least two coil groups, and the at least two coil groups are arranged in a vertical direction;

[0008] Each coil group includes a first coil and at least one second coil, the at least one second coil is nested in sequence, and the innermost second coil is nested outside the first coil, and each second coil and the first coil are independently powered by DC.

[0009] In some embodiments, the magnetic assembly further comprises:

[0010] A base is disposed above the upper electrode assembly, wherein the base is provided with at least two accommodating cavities, the at least two accommodating cavities are arranged in a vertical direction, and the at least two coil assemblies are disposed in the at least two accommodating cavities in a one-to-one correspondence;

[0011] Each of the accommodating cavities includes a first annular cavity and at least one second annular cavity, wherein the at least one second annular cavity is nested in sequence, and the innermost second annular cavity is nested outside the first annular cavity;

[0012] In the accommodating cavity and the corresponding coil group, the first coil is arranged in the first annular cavity, and the at least one second coil is arranged in the at least one second annular cavity in a one-to-one correspondence.

[0013] In some embodiments, there are two coil groups, and each coil group includes the first coil and one second coil;

[0014] The base comprises:

[0015] The carrier plate base has a top surface provided with a first annular groove and a second annular groove arranged around the first annular groove, and a bottom surface provided with a third annular groove and a fourth annular groove arranged around the third annular groove;

[0016] A top cover, covering the top surface of the carrier plate base, wherein the top cover and the first annular groove and the second annular groove respectively form the first annular cavity and the second annular cavity;

[0017] The bottom cover is sealed on the bottom surface of the carrier plate base, and the bottom cover, the third annular groove and the fourth annular groove respectively form the first annular cavity and the second annular cavity.

[0018] In some embodiments, the magnetic assembly further comprises:

[0019] A cooling element is provided on the top surface of the base and is used for introducing a circulating cooling medium to cool the base.

[0020] In some embodiments, the upper electrode structure further comprises:

[0021] a fixing frame, the upper electrode assembly is disposed on the fixing frame, the fixing frame is provided with a first separator spaced apart from the upper electrode assembly, and the first separator is located above the upper electrode assembly, and the base is movably disposed on the first separator;

[0022] The first driving source is provided on the first partition plate and connected to the base, and is used for driving the base to move in a horizontal direction relative to the first partition plate.

[0023] In some embodiments, the first driving source includes:

[0024] At least one pair of first motors is arranged around the base, and the two first motors in the same pair are symmetrically arranged relative to the center of the upper electrode assembly, for cooperatively driving the base to move on a straight line where the two first motors in the same pair are located.

[0025] In some embodiments, the upper electrode structure further comprises:

[0026] The second driving source is disposed on the first partition and connected to the base, and is used to adjust the tilt angle of the magnetic component or the height relative to the first partition.

[0027] In some embodiments, the second driving source includes:

[0028] At least three second motors are connected to the bottom surface of the base and are used to adjust the height or tilt angle of the base.

[0029] In a second aspect, an embodiment of the present application further provides a semiconductor process chamber, comprising a chamber body and an upper electrode structure as described in the above embodiments;

[0030] An opening is provided on the top of the chamber body, and the upper electrode structure is arranged at the opening.

[0031] In some embodiments, the semiconductor process chamber further comprises:

[0032] The radio frequency feeding module is connected to the upper electrode structure and is used to apply radio frequency voltage to the upper electrode structure.

[0033] In a third aspect, an embodiment of the present application further provides a semiconductor processing device, comprising the semiconductor process chamber as described in the above embodiments.

[0034] As described above, the upper electrode structure provided by the present application further includes a magnetic assembly, which is disposed above the upper electrode assembly. The magnetic assembly includes two or more coil groups arranged in a vertical direction, each coil group including a first coil and at least one second coil, and in each coil group, all second coils and the first coil are independently loaded with a DC voltage. That is, in this embodiment, the magnetic assembly is divided into multiple layers along the axial direction and multiple zones along the radial direction, and whether the coils in each layer and each zone are loaded with voltage can be independently controlled. This allows precise control of the radial distribution of the plasma and improves the uniformity of the plasma. In addition, compared to a single-layer or single-zone coil structure, when the magnetic field capability needs to be improved, the number of turns needs to be increased or the coil wire diameter and other parameters need to be changed. Such a structure requires more space and is more expensive. In this embodiment, the entire magnetic assembly is a multi-layer, multi-zone coil. When the same magnetic field capability needs to be improved, only the number of turns and wire diameter of the coils in each zone need to be fine-tuned. This can improve the spatial reuse rate of the upper electrode structure and reduce the cost of the machine. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The accompanying drawings herein are incorporated into and constitute a part of the specification, illustrate embodiments consistent with the present application, and together with the specification, are used to explain the principles of the present application. In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for describing the embodiments. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without inventive work.

[0036] FIG1 is a schematic structural diagram of a semiconductor process chamber in the related art;

[0037] FIG2 is a schematic structural diagram of an upper electrode structure provided in an embodiment of the present application;

[0038] FIG3 is a schematic diagram showing the effect of a magnetic component on plasma distribution according to an embodiment of the present application;

[0039] FIG4 is a schematic structural diagram of a magnetic assembly provided in an embodiment of the present application;

[0040] FIG5 is a schematic diagram of an exploded structure of a magnetic assembly provided in an embodiment of the present application;

[0041] FIG6 is a schematic cross-sectional view of a cooling element according to an embodiment of the present application;

[0042] FIG7 is a schematic diagram (top view) of the connection between a magnetic component and a first driving source provided in an embodiment of the present application;

[0043] FIG8 is a schematic diagram (bottom view) of adjusting the position of a magnetic component in the horizontal direction according to an embodiment of the present application;

[0044] FIG9 is a schematic diagram (side view) of adjusting the position of a magnetic component in the vertical direction according to an embodiment of the present application;

[0045] FIG10 is a schematic diagram (side view) of adjusting the tilt angle of a magnetic component provided in an embodiment of the present application.

[0046] The purpose of this application, its features, and advantages will be further described in conjunction with the embodiments and with reference to the accompanying drawings. The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and the accompanying text are not intended to limit the scope of the present application in any way, but rather to illustrate the concepts of this application to those skilled in the art by reference to specific embodiments. DETAILED DESCRIPTION

[0047] Exemplary embodiments will be described in detail herein, with examples illustrated in the accompanying drawings. In the following description, when referring to the drawings, identical numerals in different figures represent identical or similar elements, unless otherwise indicated. The embodiments described in the following exemplary embodiments are not intended to represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims.

[0048] It should be noted that, in this document, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprising a ..." does not exclude the presence of other identical elements in the process, method, article or device comprising the element. In addition, components, features, and elements with the same name in different embodiments of the present application may have the same meaning or different meanings, and their specific meanings need to be determined by their explanation in the specific embodiment or further combined with the context of the specific embodiment.

[0049] It should be further understood that the terms "comprising" and "including" indicate the presence of the described features, steps, operations, elements, components, items, kinds, and / or groups, but do not exclude the presence, occurrence, or addition of one or more other features, steps, operations, elements, components, items, kinds, and / or groups. The terms "or", "and / or", "including at least one of the following", etc. used in this application may be interpreted as inclusive, or mean any one or any combination. For example, "including at least one of the following: A, B, C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C", and for another example, "A, B or C" or "A, B and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C". Exceptions to this definition will only occur when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way.

[0050] It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are merely used to distinguish information of the same type from one another. For example, first information could also be referred to as second information, and similarly, second information could also be referred to as first information without departing from the scope of this document. Depending on the context, as used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context indicates otherwise.

[0051] It should be understood that the terms "top", "bottom", "up", "down", "vertical", "horizontal", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0052] For ease of description, the following embodiments are all described using the orthogonal space formed by the horizontal plane and the vertical direction as an example. This premise should not be understood as a limitation to the present application.

[0053] Please refer to Figure 1, which is a schematic structural diagram of a semiconductor process chamber in the related art. The semiconductor process chamber includes a chamber body 10a, an upper electrode assembly 20a and a lower electrode assembly 30a arranged opposite each other within the chamber body 10a, and a cover plate 40a covering the top of the chamber body 10a. The lower electrode assembly 30a is loaded with radio frequency power provided by an radio frequency power supply. The upper electrode assembly 20a serves only as a plate of a capacitor and may specifically include an upper electrode 21a and a gas distribution plate 22a arranged on the top surface of the upper electrode 21a. A cavity 50a is formed between the gas distribution plate 22a and the cover plate 40a. Process gas passes through the vent hole in the center of the cover plate 40a, enters the cavity 50a, and enters the chamber body 10a through the gas distribution structure within the upper electrode assembly 20a. Under the discharge excitation of the upper electrode assembly 20a and the lower electrode assembly 30a, a plasma is formed to bombard and etch the wafer surface. The semiconductor process chamber can only improve plasma uniformity through structural dimensions and installation accuracy, which has limited improvement effects and has significant limitations in application. Based on this, the present application provides an upper electrode structure, a semiconductor process chamber, and semiconductor process equipment.

[0054] Referring to Figures 2-4, Figure 2 is a schematic diagram of an upper electrode structure according to an embodiment of the present application, Figure 3 is a schematic diagram illustrating the effect of a magnetic assembly on plasma distribution according to an embodiment of the present application, and Figure 4 is a schematic diagram of a magnetic assembly according to an embodiment of the present application. The upper electrode structure may include an upper electrode assembly 10 and a magnetic assembly 20. In use, the upper electrode assembly 10 is configured to be disposed at the top of a semiconductor process chamber, for example, supported on the sidewall of the chamber body 100.

[0055] The magnetic assembly 20 is disposed above the upper electrode assembly 10. For example, the magnetic assembly 20 can be mounted above the upper electrode assembly 10 by a structure such as a bracket. The specific mounting method is not particularly limited in the embodiment of the present application. The magnetic assembly 20 includes at least two coil groups 21. The at least two coil groups 21 (i.e., all coil groups 21) are arranged in a vertical direction. Each coil group 21 includes a first coil 211 and at least one second coil 212. The at least one second coil 212 (i.e., all second coils 212) are nested in sequence, and the innermost second coil 212 is nested outside the first coil 211. Each second coil 212, i.e., each of all second coils 212, and the first coil 211 are independently powered by DC.

[0056] Figures 2 and 4 show a 2×2 magnetic component 20 structure, that is, two coil groups 21 are arranged in the vertical direction, and each coil group 21 includes a first coil 211 and a second coil 212. In other embodiments, such as for larger process chambers or larger wafers, each magnetic component 20 may include more than two coil groups 21, and each coil group 21 may also be provided with more than two second coils 212. It should be noted that in this embodiment, the first coil 211 can be disc-shaped or a ring-shaped structure with a middle space, and the middle space is used to set other structures. In the embodiments of the present application, the first coil 211 is described as an annular structure, which does not constitute a limitation to the present application.

[0057] Please refer to FIG3 , FIG3 (3b) is a schematic diagram of the effect of a magnetic component on the distribution of plasma provided by an embodiment of the present application, wherein FIG3 (3a) is a comparative diagram, wherein the top surface of the upper electrode assembly 10 is not provided with a magnetic component 20, and the plasma moves substantially in a straight line toward the surface of the wafer 101 on the supporting base 200. Generally, the distribution density of plasma is higher in the center area of ​​the wafer and lower in the edge area of ​​the wafer, which easily leads to an etching rate faster in the center area of ​​the wafer than in the edge area of ​​the wafer, and the probability of eccentricity problem increases. In FIG3 (3b), the top surface of the upper electrode assembly 10 is provided with a magnetic component 20. After the magnetic component 20 is loaded with a DC voltage, a radial magnetic field is generated in the vertical direction. During the downward movement of the plasma, the plasma is deflected toward the circumferential edge of the wafer under the action of the magnetic field, so that the plasma density in the center area is reduced and the plasma density in the edge area is increased. By regulating the voltage loaded on the magnetic component 20, the density distribution of the plasma on the entire surface of the wafer 101 can be made more uniform.

[0058] In this embodiment, the magnetic assembly 20 includes two or more layers of coil assemblies 21, each coil assembly 21 including a first coil 211 and at least one second coil 212. Furthermore, since each of the second coils 212 in each coil assembly 21 is independently loaded with a DC voltage as is the first coil 211, this embodiment divides the magnetic assembly 20 into multiple layers along the axial direction and multiple zones along the radial direction, and can independently control whether the coils in each layer and each zone are loaded with voltage, thereby precisely controlling the radial distribution of the plasma. Furthermore, compared to single-layer or single-zone coil structures, increasing the number of turns or changing parameters such as the coil wire diameter is required to increase the magnetic field capability, resulting in a larger space requirement and higher cost. In this embodiment, the entire magnetic assembly 20 is a multi-layer, multi-zone coil. To achieve the same magnetic field capability, only the number of turns and wire diameter of the coils in each zone need to be fine-tuned. This improves the spatial reuse rate of the top electrode structure and reduces machine costs. The present application does not limit the specific structure of the upper electrode assembly 10. As an example, please continue to refer to Figure 2. The upper electrode assembly 10 may include a cooling air inlet disk 11, an air uniforming disk 12, and a silicon electrode 13 stacked in sequence, as well as a focusing ring 14 sleeved on the outside of the upper electrode assembly 10 and an isolation ring 15 sleeved on the outside of the cooling air inlet disk 11 and the air uniforming disk 12. The cooling air inlet disk 11 can be used to allow gas to pass through, and a cooling channel is provided inside to cool the outside of the upper electrode assembly 10. The air uniforming disk 12 can homogenize the gas, and the gas enters the process chamber from the small hole in the silicon electrode 13 after homogenization.

[0059] In one embodiment, referring to Figures 2 and 4 , the present application provides a specific embodiment of a coil assembly. The magnetic assembly 20 of this embodiment may further include a base 22. The base 22 is disposed above the upper electrode assembly 10. For example, the base 22 may be supported on the sidewall of the chamber body 100, for example, by corresponding components, and suspended above the upper electrode assembly 10 to electrically isolate the coil assembly 21 from the upper electrode assembly 10. The base 22 includes at least two accommodating cavities 221. The at least two accommodating cavities 221 are arranged in a vertical direction, and each coil assembly 21 is disposed in a one-to-one correspondence within each accommodating cavity 221. In addition, each accommodating cavity 221 includes a first annular cavity 2211 and at least one second annular cavity 2212. When there are multiple second annular cavities 2212, they are nested in sequence, with the innermost second annular cavity 2212 nested outside the first annular cavity 2211. In the accommodating cavity 221 and the corresponding coil assembly 21 , the first coil 211 is disposed in the first annular cavity 2211 , and the second coils 212 are disposed in the second annular cavities 2212 in a one-to-one correspondence.

[0060] For example, as shown in FIG4 , the base 22 may include two accommodating cavities 221 arranged in a vertical direction, and each accommodating cavity 221 is provided with a corresponding coil assembly 21. Specifically, each accommodating cavity 221 includes a first annular cavity 2211 and a second annular cavity 2212, and each coil assembly 21 includes a first coil 211 disposed in the first annular cavity 2211 and a second coil 212 disposed in the second annular cavity 2212.

[0061] As an implementation method of the base 22 including the above-mentioned dual-zone double-layer coil, please refer to Figure 5, which is a schematic diagram of the exploded structure of a magnetic component provided in an embodiment of the present application. The base 22 may include: a supporting plate base 223, and a top cover 224 and a bottom cover 225 arranged on the upper and lower sides of the supporting plate base 223. The top surface of the supporting plate base 223 is provided with a first annular groove 2231 and a second annular groove 2232 arranged around the first annular groove 2231. The top cover 224 is sealed (for example, welded) on the top surface of the supporting plate base 223. The top cover 224 and the first annular groove 2231 form a first annular cavity 2211, that is, the top cover 224 closes the notch of the first annular groove 2231 to form the first annular cavity 2211; the top cover 224 and the second annular groove 2232 form a second annular cavity 2212, that is, the top cover 224 closes the notch of the second annular groove 2232 to form the second annular cavity 2212; the first coil 211 is arranged in the first annular cavity 2211, and the second coil 212 is arranged in the second annular cavity 2212. Similarly, a third annular groove and a fourth annular groove arranged around the third annular groove can also be provided on the bottom surface of the carrier plate base 223 (due to viewing angle reasons, the structure is not visible and is not shown in the figure), and the bottom cover 225 is sealed on the bottom surface of the carrier plate base 223. The bottom cover 225 and the third annular groove form a first annular cavity, that is, the bottom cover 225 closes the notch of the third annular groove to form a first annular cavity; the bottom cover 225 and the fourth annular groove form a second annular cavity, that is, the bottom cover 225 closes the notch of the fourth annular groove to form a second annular cavity; the first annular cavity and the second annular cavity formed on the bottom surface of the carrier plate base 223 respectively accommodate the first coil 211 and the second coil 212.

[0062] It is understandable that when more layers of coil assemblies 21 are required, the supporting plate base 223 and the corresponding top cover 224 and bottom cover 225 can be further added, and they can be stacked and welded in sequence.

[0063] In one embodiment, please continue to refer to Figures 4 and 5. The magnetic component 20 may further include a cooling member 23, which is arranged on the top surface of the base 22 and is used to pass a circulating cooling medium to cool the base 22. For example, the cooling member 23 can be arranged on the top surface of the top cover 224 of the base 22. Figure 6 is a schematic cross-sectional structural diagram of a cooling member provided in an embodiment of the present application. A spiral channel 231 can be provided inside the cooling member 23, and the inlet 232 and outlet 233 of the channel 231 can both be provided on the side of the cooling member 23 for connecting a pipeline so that the circulating cooling medium can flow through the cooling member 23 to achieve cooling and temperature control of the base 22.

[0064] In one embodiment, referring to Figures 2 and 7, Figure 7 is a schematic diagram (top view) of the connection between a magnetic assembly and a first driving source provided in an embodiment of the present application. The upper electrode structure may further include a fixing frame 30 and a first driving source 40. The upper electrode assembly 10 is disposed on the fixing frame 30. The fixing frame 30 is provided with a first partition 31 spaced apart from the upper electrode assembly 10, and the first partition 31 is located above the upper electrode assembly 10. The base 22 of the magnetic assembly 20 is movably disposed on the first partition 31. The first driving source 40 is disposed on the first partition 31 and connected to the base 22 for driving the base 22 to move horizontally relative to the first partition 31.

[0065] Since the horizontal position of the induced magnetic field of the magnetic component 20 has a significant effect on the uniformity of the plasma, this embodiment can use the first drive source 40 to drive the base 22 to move horizontally relative to the first partition 31 to adjust the horizontal position of the magnetic component 20, thereby increasing the magnetic flux in the area with a weaker etching rate, increasing the electron density in the area, and then increasing the etching rate in the area to meet some special process requirements. These special process requirements require a larger or smaller magnetic field strength in certain directions, which cannot be met by simply changing the voltage size of multiple zones. This embodiment can directionally improve the etching ability in a certain direction according to the process requirements, so that the etching selectivity is greater. The first drive source 40 can be implemented by a motor plus a conventional motion mechanism, and its specific implementation form is not particularly limited in this application.

[0066] In order to prevent the magnetic field generated by the magnetic component 20 from affecting the peripheral circuit, please continue to refer to Figure 2. Preferably, a shielding cover 32 is also provided on the fixing frame 30. The shielding cover 32 is provided on the first partition 31 to cover the magnetic component 20 inside, so that the magnetic field generated by the magnetic component 20 can only be emitted to one side of the upper electrode component 10.

[0067] As an example of a first driving source 40, please refer to Figures 7 and 8. Figure 8 is a schematic diagram (bottom view) of adjusting the position of a magnetic assembly in the horizontal direction provided in an embodiment of the present application. The first driving source 40 may include at least one pair of first motors 41. All first motors 41 are arranged around the base 22, and the two first motors 41 of the same pair are symmetrically arranged relative to the center of the upper electrode assembly 10, for collaboratively driving the base 22 to move on a straight line where the two first motors 41 of the same pair are located. It can be understood that with respect to Figure 7, when the magnetic assembly 20 is coaxially arranged with the upper electrode assembly 10 in the initial position, the two first motors 41 of the same pair are simultaneously symmetrically arranged relative to the center of the magnetic assembly 20.

[0068] For example, when the horizontal position of the magnetic assembly 20 needs to be adjusted, as shown in FIG8 , the two first motors 41A and 41B in the same pair control the extension and contraction of their own screw rods through electrical signals to push the magnetic assembly 20 and change its position. Specifically, the screw rod of the first motor 41A at the 3 o'clock position extends, and the screw rod of the first motor 41B at the 9 o'clock position retracts to adjust the position of the magnetic assembly 20 toward 9 o'clock (from the solid line to the dotted line position). It can be understood that in this embodiment, the more pairs of first motors 41 are set, the more accurate the position adjustment of the magnetic assembly 20.

[0069] In one embodiment, referring to FIG. 2 , the upper electrode structure may further include a second driving source 50 , which is disposed on the first partition 31 and connected to the base 22 for adjusting the tilt angle of the base 22 or the height relative to the first partition 31 .

[0070] Since the induced magnetic field of the magnetic component 20 decreases in strength as the distance from the upper electrode component 10 increases, the magnetic field strength will decay. In this embodiment, the second driving source 50 can be used to drive a part or the entire base 22 to move in the vertical direction to adjust the tilt angle or height of the base 22 to meet some special process requirements. These special process requirements require a larger magnetic field strength, which cannot be met by simply changing the voltage size of multiple zones. In this embodiment, the etching ability in a certain direction can be directionally improved according to the process requirements, so the etching selectivity is greater. The second driving source 50 can be implemented by a motor plus a conventional motion mechanism, and its specific implementation form is not particularly limited in this application.

[0071] As an example of a second driving source 50, please refer to Figures 9 and 10. Figure 9 is a schematic diagram (side view) of adjusting the position of a magnetic component in the vertical direction provided by an embodiment of the present application, and Figure 10 is a schematic diagram (side view) of adjusting the tilt angle of a magnetic component provided by an embodiment of the present application. The second driving source 50 may include: at least three second motors 51, the second motors 51 are connected to the bottom surface of the base 22 of the magnetic component 20, and are used to adjust the height or tilt angle of the base 22 of the magnetic component 20. When it is necessary to adjust the position (i.e., height) of the magnetic component 20 in the vertical direction, the screw rods of all the second motors 51 can be controlled to extend or retract at the same time, as shown in Figure 9. At this time, the base 22 of the magnetic component 20 moves as a whole in the vertical direction. When it is necessary to adjust the tilt angle of the base 22 of the magnetic component 20, at least one of all the second motors 51 can be selectively controlled to extend through the three-point leveling principle to move a portion of the base 22 of the magnetic component 20 in the vertical direction, so that it can be at the target tilt angle.

[0072] Continuing with FIG. 2 , another embodiment of the present application provides a semiconductor process chamber, comprising a chamber body 100 and the upper electrode structure described in the above embodiments. The chamber body 100 has an opening at the top, and the upper electrode structure is disposed at the opening. The semiconductor process chamber may be a capacitively coupled plasma etching process chamber.

[0073] In one embodiment, please continue to refer to FIG. 2 , the semiconductor process chamber may further include a radio frequency feeding module 300 , which is connected to the upper electrode structure and is used to apply radio frequency voltage to the upper electrode structure.

[0074] Conventional CCP devices typically do not mount RF components on their upper electrode structures, limiting their impact on plasma uniformity through structural size and mounting precision. This approach, however, applies RF voltage to the upper electrode structure to increase plasma density and widen the usable RF window.

[0075] For example, the RF feeding module 300 can be connected to a matcher and then connected to the upper electrode structure through the RF feeding copper column 301. Loading the upper electrode structure with RF voltage can increase the density of the plasma and expand the usable RF window.

[0076] In one embodiment, the semiconductor process chamber further includes a multi-way air inlet system. For example, a plurality of air inlet holes may be provided on the cooling air inlet plate 11 of the upper electrode structure, and each air inlet hole is connected to an air inlet pipe 400 .

[0077] Traditional upper electrode structures typically use a single central point for gas intake, followed by layer-by-layer diffusion. This spatial abruptness can create eddies, affecting gas uniformity. Furthermore, when low-flow gas is introduced during the process, some gas is absorbed by this gap, affecting gas transfer efficiency. This gap is caused by mounting issues and cannot be eliminated. In this embodiment, a multi-channel gas intake system is implemented to achieve more uniform and stable gas flow into the process chamber.

[0078] An embodiment of the present application further provides a semiconductor process equipment, which includes the semiconductor process chamber described in the above embodiments. The semiconductor process equipment may be a CCP etching equipment.

[0079] For other working principles and processes of the semiconductor process chamber and semiconductor processing equipment of this embodiment, please refer to the description of the upper electrode structure in the aforementioned embodiment of the present invention, which will not be repeated here.

[0080] The above describes in detail the upper electrode structure, semiconductor process chamber, and semiconductor process equipment provided by this application. This article uses specific examples to illustrate the principles and implementation methods of this application. It should be noted that in this application, the descriptions of each embodiment have their own emphases. For portions not detailed or recorded in one embodiment, please refer to the relevant descriptions of other embodiments.

[0081] The above are only preferred embodiments of the present application and do not limit the patent scope of the present application. The various technical features of the technical solution of the present application can be arbitrarily combined. In order to make the description concise, all possible combinations of the various technical features in the above embodiments are not described. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of this application, or directly or indirectly applied in other related technical fields, as long as there is no contradiction in the combination of these technical features, are also included in the patent protection scope of the present application.

Claims

1. An upper electrode structure, applied to a semiconductor process chamber, characterized in that: The upper electrode structure comprises: An upper electrode assembly, used to be arranged on the top of the semiconductor process chamber; A magnetic assembly is disposed above the upper electrode assembly, wherein the magnetic assembly includes at least two coil groups, and the at least two coil groups are arranged in a vertical direction; Each coil group includes a first coil and at least one second coil, the at least one second coil is nested in sequence, and the innermost second coil is nested outside the first coil, and each second coil and the first coil are independently powered by DC.

2. The upper electrode structure according to claim 1, characterized in that: The magnetic assembly further comprises: A base is arranged above the upper electrode assembly, wherein at least two accommodating cavities are arranged in the base, the at least two accommodating cavities are arranged in a vertical direction, and the at least two coil groups are arranged in the at least two accommodating cavities in a one-to-one correspondence; Each of the accommodating chambers comprises a first annular chamber and at least one second annular chamber, wherein the at least one second annular chamber is nested in sequence, and the innermost second annular chamber is nested on the outer side of the first annular chamber; In the accommodating cavity and the corresponding coil group, the first coil is arranged in the first annular cavity, and the at least one second coil is arranged in the at least one second annular cavity in a one-to-one correspondence.

3. The upper electrode structure according to claim 2, characterized in that: There are two coil groups, and each coil group includes the first coil and one second coil; The base comprises: A carrier plate base, the top surface of which is provided with a first annular groove and a second annular groove arranged around the first annular groove, and the bottom surface of which is provided with a third annular groove and a fourth annular groove arranged around the third annular groove; A top cover, covering the top surface of the carrier plate substrate, wherein the top cover and the first annular groove and the second annular groove respectively form the first annular cavity and the second annular cavity; A bottom cover is sealed on the bottom surface of the carrier plate substrate, and the bottom cover and the third annular groove and the fourth annular groove respectively form the first annular cavity and the second annular cavity.

4. The upper electrode structure according to claim 2, characterized in that: The magnetic assembly further comprises: A cooling element is arranged on the top surface of the base and is used to pass a circulating cooling medium to cool the base.

5. The upper electrode structure according to claim 2, characterized in that: Also includes: A fixing frame, the upper electrode assembly is arranged on the fixing frame, a first partition plate is arranged on the fixing frame and is spaced apart from the upper electrode assembly, and the first partition plate is located above the upper electrode assembly, and the base is movably arranged on the first partition plate; The first driving source is disposed on the first partition plate and connected to the base, and is used for driving the base to move in a horizontal direction relative to the first partition plate.

6. The upper electrode structure according to claim 5, characterized in that: The first driving source comprises: At least one pair of first motors is arranged around the base, and the two first motors of the same pair are symmetrically arranged relative to the center of the upper electrode assembly, for cooperatively driving the base to move on a straight line where the two first motors of the same pair are located.

7. The upper electrode structure according to claim 5, characterized in that: Also includes: The second driving source is disposed on the first partition and connected to the base, and is used for adjusting the tilt angle of the magnetic component or the height relative to the first partition.

8. The upper electrode structure according to claim 7, characterized in that: The second driving source comprises: At least three second motors are connected to the bottom surface of the base and are used to adjust the height or tilt angle of the base.

9. A semiconductor process chamber, characterized in that: It comprises a chamber body and an upper electrode structure as claimed in any one of claims 1 to 8; An opening is arranged on the top of the chamber body, and the upper electrode structure is arranged at the opening.

10. The semiconductor process chamber according to claim 9, characterized in that: Also includes: The radio frequency feeding module is connected to the upper electrode structure and is used to load radio frequency voltage to the upper electrode structure.

11. A semiconductor processing device, characterized in that: A semiconductor process chamber comprising the semiconductor process chamber described in claim 9 or 10.

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