Flow equalizing assembly, gas intake device and semiconductor apparatus

Abstract

Provided in the present application are a flow equalizing assembly, a gas intake device and a semiconductor apparatus. A flow equalizing cavity is provided inside the flow equalizing assembly, the top wall of the flow equalizing cavity being provided with a plurality of gas inlets penetrating the top wall in the direction of its own thickness, and the bottom wall of the flow equalizing cavity being provided with a plurality of gas outlets penetrating the bottom wall in the direction of its own thickness; and the inside of the flow equalizing cavity is provided with a plurality of gas intake tubes which are arranged corresponding to the plurality of gas inlets on a one-to-one basis, and a plurality of gas output tubes which are arranged corresponding to the plurality of gas outlets on a one-to-one basis, each gas intake tube having a first end connected to the corresponding gas inlet and a second end in communication with the flow equalizing cavity, and each gas output tube having a first end connected to the corresponding gas outlet and a second end in communication with the flow equalizing cavity, the second end of the gas intake tube being located below the second end of the gas output tube. By using the present application, the direction of flow of a process gas may change during the process of passing through the flow equalizing assembly, thus helping achieve equal gas discharge volumes from the gas outlets, improving the distribution uniformity of the process gas, which in turn improves the process uniformity and product yield.

Description

Flow uniformity components, air intake devices and semiconductor equipment Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular, to a flow-uniform component, an air intake device, and semiconductor equipment. Background Art

[0002] The gas inlet system is a crucial component of semiconductor equipment, primarily used to introduce reactive process gases into the process chamber to enable thin film growth, etching, and other related processes. The uniformity of the gas ejected from the inlet system directly impacts the uniformity of the process results.

[0003] In some related technologies, a flow plate is used to improve gas uniformity. Specifically, as shown in Figure 1, a semiconductor device 100' is provided with a base 11' within a process chamber 10'. The base 11' is used to support a wafer 200. The semiconductor device 100' has an air intake device comprising an inlet flow channel 21' and a flow plate 31' disposed within the process chamber 10'. The process gas is delivered to the process chamber 10' via the inlet flow channel 21'. The flow plate 31' is provided with a plurality of through holes 311', each of which has a uniform aperture. This allows the process gas to be uniformly distributed through the flow plate 31' and then directed to the surface of the wafer 200.

[0004] However, this method cannot ensure uniform distribution of the process gas above the wafer 200, resulting in poor uniformity of process results and low product yield. Summary of the Invention

[0005] The present application aims to solve at least one of the technical problems existing in the prior art, and proposes a flow uniforming component, an air intake device and a semiconductor device.

[0006] In the first aspect, the present application provides a uniform flow component, which has a uniform flow chamber inside the uniform flow component, and the top wall of the uniform flow chamber is provided with a plurality of air inlets penetrating the top wall along the thickness direction of the uniform flow chamber, and the bottom wall of the uniform flow chamber is provided with a plurality of air outlets penetrating the bottom wall along the thickness direction of the uniform flow chamber; the uniform flow chamber is provided with a plurality of air inlet pipes arranged one-to-one corresponding to the plurality of air inlets, and a plurality of air outlet pipes arranged one-to-one corresponding to the plurality of air outlets; the first end of the air inlet pipe is connected to the corresponding air inlet, and the second end of the air inlet pipe is connected to the uniform flow chamber; the first end of the air outlet pipe is connected to the corresponding air outlet, and the second end of the air outlet pipe is connected to the uniform flow chamber; the second end of the air inlet pipe is located below the second end of the outlet pipe.

[0007] In some possible embodiments, the second end of the air inlet pipe is closed, and a plurality of first uniform flow holes are circumferentially spaced on the tube wall of the second end of the air inlet pipe; and / or, the second end of the air outlet pipe is closed, and a plurality of second uniform flow holes are circumferentially spaced on the tube wall of the second end of the air outlet pipe.

[0008] In some possible embodiments, the channel inside the air inlet pipe passes through the corresponding second end of the air inlet pipe, and the second end of the air inlet pipe is close to the bottom wall and forms a first gap with the bottom wall; and / or, the channel inside the air outlet pipe passes through the corresponding second end of the air outlet pipe, and the second end of the air outlet pipe is close to the top wall and forms a second gap with the top wall.

[0009] In some possible embodiments, when a first gap is formed between the second end of the air inlet pipe and the bottom wall and a second gap is formed between the second end of the air outlet pipe and the top wall, the axial dimensions of the first gap and the second gap in the uniform flow chamber are both greater than or equal to 0.1 mm and less than or equal to one half of the height of the uniform flow chamber.

[0010] In some possible implementations, all of the air inlet pipes and all of the air outlet pipes extend along the axial direction of the flow-uniform cavity;

[0011] The top wall is provided with a plurality of rows of air inlets sequentially spaced along a first radial direction of the uniform flow chamber, and each row of air inlets includes a plurality of air inlets sequentially spaced along a second radial direction of the uniform flow chamber; or, the top wall is provided with a plurality of circles of air inlets spaced along a radial direction of the uniform flow chamber, and the aperture of each circle of air inlets gradually increases from the center to the edge of the top wall, and the number of air inlets in each circle gradually increases;

[0012] The bottom wall is provided with a plurality of rows of air outlets spaced in sequence along a first radial direction, and each row of air outlets includes a plurality of air outlets spaced in sequence along a second radial direction;

[0013] The air inlet and the air outlet are staggered with each other in the first radial direction and the second radial direction; wherein the first radial direction, the second radial direction and the axial direction of the uniform flow chamber are perpendicular to each other.

[0014] In some possible implementations, the orthographic projections of all the gas outlets on the uniform flow chamber on the supporting surface of the base of the semiconductor device exceed the edge of the wafer supported by the supporting surface.

[0015] In the second aspect, the present application provides an air intake device, comprising: one or multiple flow equalizer components stacked and spaced apart and at least one first total air intake pipe; the flow equalizer component is any one of the flow equalizer components provided in the first aspect of the present application, and when the air intake device includes one flow equalizer component, the outlet of the first total air intake pipe is located on the air inlet side of the flow equalizer component; when the air intake device includes multiple flow equalizer components, the outlet of the first total air intake pipe is located on the air inlet side of the first flow equalizer component stacked from top to bottom along the axial direction of the flow equalizer cavity.

[0016] In some possible embodiments, when the air intake device includes multiple flow equalizer components, the air intake device also includes: a connecting ring arranged between any two adjacent flow equalizer components and connected to the two adjacent flow equalizer components, and the connecting ring and the two adjacent flow equalizer components together enclose an air intake space.

[0017] In some possible embodiments, the last of the plurality of flow-uniform assemblies stacked from top to bottom along the axial direction of the flow-uniform chamber is a second flow-uniform assembly, and the remaining flow-uniform assemblies are first flow-uniform assemblies; the air intake device further includes: at least one second main air intake pipe and a plurality of connecting pipes provided for each of the first flow-uniform assemblies; and the air inlet end of the connecting pipe is connected to the air outlet of the corresponding first flow-uniform assembly, and the air outlet end of the connecting pipe passes through all the flow-uniform assemblies located below the corresponding first flow-uniform assembly and is exposed to the air outlet side of the second flow-uniform assembly;

[0018] Each of the air intake spaces is connected to at least one of the second main air intake pipes; the second main air intake pipe corresponding to the air intake space passes through other uniform flow components located above the air intake space and enters the corresponding air intake space.

[0019] In some possible implementations, each of the air intake spaces corresponds to one second main air intake pipe.

[0020] In some possible implementations, when the air intake device includes two flow-uniform components, there is one air intake space, and the number of the connecting pipes is the same as the number of the air outlets of the first flow-uniform components;

[0021] The connecting pipe passes through the air inlet space and the second flow equalizer component, and the air inlet end of the connecting pipe is connected to the air outlet of the first flow equalizer component, and the air outlet end of the connecting pipe is exposed to the air outlet side of the second flow equalizer component.

[0022] In some possible embodiments, the outlet end of the first main air inlet pipe is connected to a first cover plate, which covers the port of the outlet end of the first main air inlet pipe. Multiple outlets are distributed on the first cover plate, and multiple outlets are arranged on the pipe wall of the outlet end of the first main air inlet pipe at circumferential intervals.

[0023] In some possible embodiments, the outlet end of the second main air inlet pipe is connected to a second cover plate, which covers the port of the outlet end of the second main air inlet pipe. A plurality of openings are distributed on the second cover plate, and a plurality of openings are arranged on the pipe wall of the outlet end of the second main air inlet pipe at circumferential intervals.

[0024] In a third aspect, the present application provides a semiconductor device, comprising: a process chamber and any one of the air intake devices provided in the second aspect of the present application, wherein a base is provided inside the process chamber, and the base has a supporting surface for supporting a wafer; the flow uniforming component is located in the process chamber, and the flow uniforming component is opposite to the base; the air inlet end of the first main air inlet pipe is located outside the process chamber, and the air outlet end of the first main air inlet pipe is located inside the process chamber.

[0025] In some possible embodiments, the semiconductor device further includes a support ring arranged inside the process chamber, and the support ring is fixedly connected to the inner wall of the process chamber; when the air intake device includes one flow equalizer component, the bottom of the flow equalizer component is fixedly arranged on the support ring; when the air intake device includes multiple flow equalizer components, the last flow equalizer component among the multiple flow equalizer components stacked from top to bottom along the axial direction of the flow equalizer chamber is the second flow equalizer component, and the bottom of the second flow equalizer component is fixedly arranged on the support ring.

[0026] In some possible implementations, at least one of the flow-uniform components is grounded on the air intake device.

[0027] This application has the following beneficial effects:

[0028] The uniform flow assembly provided in the present application is designed to have a uniform flow chamber inside, and an air inlet pipe and an air outlet pipe are provided inside the uniform flow chamber. The first end of the air inlet pipe is connected to the air inlet of the top wall of the uniform flow chamber, and the second end is connected to the uniform flow chamber. The first end of the air outlet pipe is connected to the air outlet of the bottom wall of the uniform flow chamber, and the second end is connected to the uniform flow chamber, and the second end of the air inlet pipe is located below the second end of the air outlet pipe.

[0029] In this way, when the process gas passes through the uniform flow component, it flows out from the second end of the air inlet pipe into the uniform flow chamber, and then flows into the air outlet pipe. During this process, the process gas needs to change its flow direction so that the pressure of the process gas in each part of the uniform flow chamber is consistent, that is, the air pressure in the uniform flow chamber can be balanced. Based on this, when the apertures of each air outlet are equal, the flow speed of the process gas ejected from each air outlet is also consistent, so the gas ejection volume of each air outlet is the same. In this way, the uniform flow effect is enhanced, the distribution uniformity of the process gas is improved, and it is beneficial to improve the product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] FIG1 is a schematic cross-sectional view of a semiconductor device provided by some related technologies;

[0031] 2 and 3 are schematic diagrams of current distribution plates in semiconductor devices provided by other related technologies;

[0032] FIG4 is a schematic cross-sectional view of a semiconductor device provided by some related technologies;

[0033] FIG5 is a schematic structural diagram of a semiconductor device provided in Example 1 of the present application;

[0034] FIG6 is a schematic cross-sectional view of the semiconductor device shown in FIG5 along the AA direction;

[0035] FIG7 is a schematic diagram of the three-dimensional structure of the current uniforming component in the semiconductor device shown in FIG5;

[0036] FIG8 is a side view of the flow distribution assembly shown in FIG7;

[0037] FIG9 is a bottom view of the flow distribution assembly shown in FIG7 ;

[0038] FIG10 is a schematic cross-sectional view of the flow distribution assembly shown in FIG9 along the BB direction;

[0039] FIG11 is a schematic structural diagram of the first main air inlet pipe in the semiconductor device shown in FIG5 ;

[0040] FIG12 is a schematic structural diagram of a semiconductor device provided in Example 3 of the present application;

[0041] FIG13 is a structure of another semiconductor device provided in the fourth embodiment of the present application;

[0042] FIG14 is a top view of the semiconductor device shown in FIG13;

[0043] FIG15 is a schematic cross-sectional view of the semiconductor device shown in FIG14 taken along the CC direction;

[0044] FIG16 is a front view of the air intake device in the semiconductor device shown in FIG13;

[0045] FIG17 is a schematic cross-sectional view of the air intake device shown in FIG16 along the DD direction;

[0046] FIG18 is a schematic cross-sectional view of the air intake device shown in FIG16 along the EE direction;

[0047] FIG19 is a schematic cross-sectional view of the air intake device shown in FIG16 along the FF direction;

[0048] FIG20 is a schematic cross-sectional view of the air intake device shown in FIG16 along the GG direction;

[0049] FIG21 is a schematic cross-sectional view of the air intake device shown in FIG16 along the HH direction;

[0050] FIG22 is a schematic cross-sectional view of the air intake device shown in FIG16 along direction II;

[0051] FIG23 is a schematic cross-sectional view of the air intake device shown in FIG16 along the JJ direction;

[0052] FIG24 is a schematic cross-sectional view of the air intake device shown in FIG22 taken along the KK direction;

[0053] FIG25 is a schematic cross-sectional view of the air intake device shown in FIG22 along the LL direction.

[0054] Description of reference numerals:

[0055] 100-Semiconductor equipment;

[0056] 10-process chamber; 11-base; 12-support ring;

[0057] 20-first main air intake pipe; 21-first cover plate; 211-outlet;

[0058] 30 - air intake device; 31 - flow equalizer assembly; 31a - first flow equalizer assembly; 31b - second flow equalizer assembly; 311 - flow equalizer chamber; 312 - upper base plate; 3121 - air inlet; 313 - lower base plate; 3131 - air outlet; 314 - first structural ring; 315 - second structural ring; 316 - air intake pipe; 3161 - first flow equalizer hole; 317 - air outlet pipe; 3171 - second flow equalizer hole; 318 - avoidance annular groove; 32 - connecting ring; 33 - air intake space; 34 - connecting pipe; 35 - second main air intake pipe; 351 - second cover plate; 352 - opening;

[0059] 200-wafer. DETAILED DESCRIPTION

[0060] It can be understood that although the flow plate 31' in the related technology shown in Figure 1 can even out the process gas, since the outlet end of the inlet flow channel 21' corresponds to the center of the flow plate 31', the diffusion speed of the process gas toward the through hole 311' located in the middle of the flow plate 31' is greater than the diffusion speed toward the through hole 311' located around the flow plate 31', resulting in differences in the flow speed of the process gas passing through each through hole 311', forming a jet effect, and then leading to uneven airflow distribution in the process chamber 10', ultimately causing problems such as poor uniformity of process results and low product yield.

[0061] To this end, in related art, as shown in Figures 2 and 3, a plurality of circles of through holes 311' are distributed on the flow plate 31', spaced apart along its radial direction. Each circle of through holes 311' is composed of multiple through holes 311' spaced apart along the circumference of the flow plate 31'. Furthermore, the diameter of each circle of through holes 311' gradually increases from the center to the edge of the flow plate 31', and the number of through holes 311' contained in each circle of through holes 311' gradually increases.

[0062] According to the relationship between gas flow velocity and flow rate: Q = V × S, it can be understood that the gas discharge volume Q of a single through-hole 311' is related to the flow velocity V of the process gas flowing through the through-hole 311' and the flow cross-sectional area S of the through-hole 311'. Based on this, in the related art shown in Figures 2 and 3, by setting the aperture of the through-holes 311' closer to the edge of the flow plate 31' to be larger and the number of through-holes 311' to be greater, the distribution density of the gas discharge volume Q through each through-hole 311' is nearly equal, thereby improving process uniformity. However, the difference in the flow velocity V of the process gas flowing through each through-hole 311' can lead to poor consistency in process results.

[0063] However, to achieve uniform distribution of the process gas within the process chamber 10', the arrangement of the through holes 311' should be different for different process conditions (i.e., gas pressure, process gas flow velocity, and flow rate). Therefore, a single flow plate 31' is difficult to adapt to different process conditions and does not have good process compatibility and scalability.

[0064] In other related technologies, as shown in FIG4 , the air intake device of the semiconductor device 100 ′ is further provided with a diffusion channel 41 ′. The process gas ejected from the outflow end of the inlet flow channel 21 ′ is diffused through the diffusion channel 41 ′ and then flows into the process chamber 10 ′ through the through hole 311 ′ of the flow equalizer 31 ′.

[0065] When the semiconductor device 100' shown in FIG4 is an atomic layer deposition (ALD) device, an exemplary process is as follows: i) introducing two dilution gases into the inlet flow channel 21'; ii) introducing a first precursor and a dilution gas into the inlet flow channel 21'; iii) stopping introducing the first precursor into the inlet flow channel 21', and continuing to introduce the dilution gas into the inlet flow channel 21'; iv) introducing a second precursor and a dilution gas into the inlet flow channel 21'; v) stopping introducing the second precursor into the inlet flow channel 21', and continuing to introduce the dilution gas into the inlet flow channel 21'; vi) looping through steps ii) to v). In this way, the first precursor and the second precursor are alternately introduced into the process chamber 10'. Although the related art adds a diffusion channel 41', it cannot guarantee the uniformity of the process gas distribution, and is not compatible and scalable for different process conditions. Therefore, the film prepared using the semiconductor device 100' has poor uniformity and consistency, and the product yield is low.

[0066] After careful research, the applicant found that the cause of the technical problem was:

[0067] First, the process gas introduced into the inlet flow channel 21' usually contains multiple gas components. For example, multiple gases are introduced at the same time in the above-mentioned step ii) and step iv). Since the density and flow rate settings of different gases are different, the diffusion efficiency and gas distribution of various gases are different. Gases with high density tend to concentrate in the central area of ​​the diffusion channel 41' and are difficult to diffuse to the peripheral area of ​​the diffusion channel 41', resulting in a high concentration of the process gas reaching the center of the wafer and a low concentration of the process gas reaching the edge of the wafer, thereby leading to uneven distribution of the process gas. The uniformity of the process results is strongly correlated with the uniformity of the process gas distribution. Therefore, this will result in poor uniformity in the film preparation effect and affect the product yield.

[0068] Similarly, when the semiconductor device 100' shown in Figure 4 is used to perform a plasma etching process, plasma is introduced into the inlet flow channel 21'. The diffusion channel 41' has a poor effect on the diffusion of plasma toward the edge of the uniform flow plate 31', resulting in more plasma reaching the center of the wafer and less plasma reaching the edge of the wafer, thereby affecting the uniformity and consistency of the etching effect. Similarly, for the free radical isotropic etching process, the combination of the diffusion channel 41' and the uniform flow plate 31' cannot completely filter out charged particles in the plasma, resulting in poor consistency of the free radical isotropic etching effect and affecting product yield.

[0069] Secondly, because the two precursors share the same inlet flow channel 21', the residual gases of the two precursors are prone to chemical vapor deposition (CVD) reactions within the inlet flow channel 21', resulting in the formation of reaction byproducts on the flow channel walls of the inlet flow channel 21'. As the process time increases, when the reaction byproducts accumulate to a certain thickness, they are easily blown off by the process gas or naturally fall onto the wafer surface, resulting in increased particle size on the film surface, affecting the film formation quality and product yield.

[0070] Furthermore, since reaction byproducts are easily generated on the flow channel wall of the inlet flow channel 21 ′, this method has many drawbacks.

[0071] First, when the reaction by-products accumulate to a certain thickness, they will affect the flow cross-sectional area of ​​the inlet flow channel 21'. Under the premise of a certain flow velocity, the gas volume entering the process chamber 10' will decrease, the process efficiency will be reduced, and the product process consistency and equipment production capacity will be affected.

[0072] Secondly, the cleaning cycle of the air intake device is shortened, affecting the life of the air intake device and the equipment utilization rate.

[0073] In view of this, the embodiments of the present application provide a uniform flow assembly, an air intake device, and a semiconductor device. To enable those skilled in the art to better understand the technical solution of the present application, the uniform flow assembly, the air intake device, and the semiconductor device provided by the present application are described in detail below with reference to the accompanying drawings.

[0074] Example 1

[0075] Please refer to Figures 5, 6 and 7. The semiconductor equipment 100 provided in an embodiment of the present application includes a process chamber 10 and an air intake device 30. A base 11 is provided inside the process chamber 10. The base 11 has a carrying surface, which is used to carry a wafer 200 so that the wafer 200 can be processed in the process chamber 10.

[0076] The air intake device 30 is used to introduce process gas into the process chamber 10. The air intake device 30 provided in this embodiment includes a first main air intake pipe 20 and a flow equalizer assembly 31. The air intake end of the first main air intake pipe 20 is located outside the process chamber 10, and the air outlet end of the first main air intake pipe 20 extends from the top of the process chamber 10 into the process chamber 10. The air outlet end of the first main air intake pipe 20 is located on the air inlet side of the flow equalizer assembly 31.

[0077] The flow equalizer 31 is opposite to the base 11 and can equalize the process gas flowing out of the outlet end of the first main inlet pipe 20 so that the process gas is evenly sprayed onto the surface of the wafer 200. The structure of the flow equalizer 31 is first described in detail below.

[0078] Referring to Figures 7 to 10 , this embodiment provides a flow equalizing assembly 31 having a flow equalizing chamber 311 therein. The top wall of the flow equalizing chamber 311 is provided with a plurality of air inlets 3121 extending through the top wall along its thickness, and the bottom wall of the flow equalizing chamber 311 is provided with a plurality of air outlets 3131 extending through the bottom wall along its thickness. For example, each of the air outlets 3131 has an equal diameter.

[0079] A plurality of air inlet pipes 316 and a plurality of air outlet pipes 317 are further provided inside the flow-uniforming chamber 311. The air inlet pipes 316 and the air outlet pipes 317 each have two ends. As used herein, the "first end" of the air inlet pipe 316 and the "gas inflow end" of the air inlet pipe 316 can be used interchangeably, the "second end" of the air inlet pipe 316 and the "gas outflow end" of the air inlet pipe 316 can be used interchangeably, the "first end" of the air outlet pipe 317 and the "gas outflow end" of the air outlet pipe 317 can be used interchangeably, and the "second end" of the air outlet pipe 317 and the "gas inflow end" of the air outlet pipe 317 can be used interchangeably. Exemplarily, the number of air inlet pipes 316 is equal to the number of air inlet ports 3121, and multiple air inlet pipes 316 correspond one-to-one to multiple air inlet ports 3121. The gas inlet end of each air inlet pipe 316 is connected to the corresponding air inlet port 3121, and the gas outflow end is penetrated by the channel inside it, so that the gas outflow end of each air inlet pipe 316 is connected to the uniform flow chamber 311, and the gas outflow end of the air inlet pipe 316 is close to the bottom wall of the uniform flow chamber 311 and forms a first gap with the bottom wall. In other words, the two ends of each air inlet pipe 316 are the gas inflow end and the gas outflow end, respectively, and the air inlet pipe 316 has a channel connecting the gas inflow end and the gas outflow end, so that the process gas flows from the gas inflow end of the air inlet pipe 316 to the gas outflow end. All the air inlet pipes 316 are located inside the uniform flow chamber 311, the gas inlet end of each air inlet pipe 316 is connected to the corresponding air inlet port 3121, and the gas outflow end of each air inlet pipe 316 is close to the bottom wall of the uniform flow chamber 311 and forms a first gap between the bottom wall so that the gas outflow end of the air inlet pipe 316 is connected to the uniform flow chamber 311. Exemplarily, the number of gas outlet pipes 317 is equal to the number of gas outlet ports 3131, and multiple gas outlet pipes 317 correspond one-to-one to multiple gas outlet ports 3131. The gas outflow end of each gas outlet pipe 317 is connected to the corresponding gas outlet port 3131, and the gas inflow end is penetrated by the channel inside it, so that the gas inflow end of each gas outlet pipe 317 is connected to the uniform flow chamber 311, and the gas inflow end of the gas outlet pipe 317 is close to the top wall of the uniform flow chamber 311 and forms a second gap with the top wall. In other words, the two ends of each gas outlet pipe 317 are the gas inflow end and the gas outflow end, respectively, and the gas outlet pipe 317 has a channel connecting the gas inflow end and the gas outflow end, so that the process gas flows from the gas inflow end of the gas outlet pipe 317 to the gas outflow end. All the outlet pipes 317 are located inside the uniform flow chamber 311, and the gas outflow end of each outlet pipe 317 is connected to the corresponding outlet port 3131. The gas inflow end of each outlet pipe 317 is close to the top wall of the uniform flow chamber 311 and forms a second gap between the top wall so that the gas inflow end of the outlet pipe 317 is connected to the uniform flow chamber 311.

[0080] It should also be noted that, along the axial direction of the process chamber 10, the gas outlet end of the inlet pipe 316 is located below the gas inlet end of the outlet pipe 317. That is, the first gap is located below the second gap. It should be noted that in the drawings of the various embodiments of this application, the Z-axis represents the axial direction of the process chamber 10, and the axial direction of the uniform flow chamber 311 also extends along the Z-axis.

[0081] 6 , the flow path of the process gas during operation of the semiconductor device 100 of this embodiment is as follows: the process gas flows from the outlet end of the first main inlet pipe 20 into the gas guide space S1 enclosed by the upper cover of the process chamber 10 and the top wall of the flow uniformity assembly 31, and is initially uniformed. Thereafter, the process gas is divided into multiple streams of process gas, each of which flows from an inlet port 3121 into a corresponding inlet pipe 316, flows through the gas outlet end of the inlet pipe 316 into the first gap, and is ejected downward to the bottom wall of the flow uniformity chamber 311. Through the reflection of the bottom wall of the uniform flow chamber 311, the process gas flows radially along the process chamber 10 in the uniform flow chamber 311 and is uniformed. At the same time, the process gas also flows upward to the top wall of the uniform flow chamber 311. Through the reflection of the top wall of the uniform flow chamber 311, the process gas flows from the second gap into the adjacent outlet pipe 317, and is sprayed into the process space S2 between the bottom wall of the uniform flow component 31 and the base 11 through the outlet 3131 connected to the corresponding outlet pipe 317, and is then sprayed onto the surface of the wafer 200 to perform the corresponding thin film deposition process or etching process.

[0082] It can be seen that the flow-leveling component 31 of this embodiment is designed with an air inlet pipe 316 and an air outlet pipe 317, and the gas outlet end of the air inlet pipe 316 is located below the gas inlet end of the air outlet pipe 317. In this way, when the process gas passes through the flow-leveling component 31, it will be reflected twice and the flow direction will be changed under the effect of the reflection. In this way, the pressure buffering of the process gas at various locations in the flow-leveling chamber 311 is consistent, that is, the air pressure buffering balance can be achieved in the flow-leveling chamber 311. Based on this, when the apertures of the various air outlets 3131 are equal (that is, the flow cross-sectional areas S of the various air outlets 3131 are equal), the flow velocity V of the process gas ejected from the various air outlets 3131 is also consistent, and therefore, the gas ejection amount Q of each air outlet 3131 is also the same. In this way, the process gas is buffered and evenly distributed in the uniform flow chamber 311, thereby enhancing the uniform flow effect and improving the uniformity of the distribution of the process gas, which is beneficial to improving the product yield and the consistency of the process results at various locations on the wafer surface. In other words, the uniform flow component 31 of this embodiment buffers and evens out the gas in the uniform flow chamber 311 by causing the flow direction of the process gas flowing from the air inlet pipe 316 to the air outlet pipe 317 to change at least once in the vertical direction, thereby alleviating the pressure difference of the process gas flowing out of the air inlet pipe 316 in the uniform flow chamber 311. In this way, the pressure buffering of the gas at various locations in the uniform flow chamber 311 is consistent. When the cross-sectional areas of the various air outlets 3131 are equal, the gas ejection amounts of each air outlet 3131 are the same, thereby achieving uniform flow.

[0083] Furthermore, because the flow-leveling assembly 31 of this embodiment achieves pressure buffering and gas uniformity by reversing the flow of process gas within the flow-leveling chamber 311, its gas uniformity performance is less affected by manufacturing errors. Furthermore, compared to the related art shown in Figures 2 and 3 , the flow-leveling assembly 31 of this embodiment and the gas inlet device 30 equipped with the flow-leveling assembly 31 have excellent compatibility with process conditions, a simple structure, and a beneficial effect on reducing the volume of the process chamber 10 in which the flow-leveling assembly 31 is used.

[0084] As shown in FIG8 , in the flow-uniforming assembly 31 disclosed in the present application, the dimension of the first gap in the axial direction Z of the flow-uniforming chamber 311 is h1, and the dimension of the second gap in the axial direction Z of the flow-uniforming chamber 311 is h2, 0.1 mm ≤ h1 ≤ H×1 / 2, 0.1 mm ≤ h2 ≤ H×1 / 2. Wherein, H is the height of the flow-uniforming chamber 311. Wherein, h1 and h2 are preferably 0.1 mm, and in this case, both h1 and h2 are relatively small. Thus, on the one hand, the transport path of the process gas from the gas outflow end of the inlet pipe 316 to the gas inflow end of the outlet pipe 317 can be effectively extended, thereby improving the gas uniformity effect. On the other hand, the first gap and the second gap are equivalent to slits, which can also promote the process gas to flow radially along the flow-uniforming chamber 311 when entering and exiting the slit, so that the diffusion effect of the process gas in the radial direction of the process chamber 10 can be effectively improved, thereby improving the uniformity of the diffusion of the process gas to the edge of the process chamber 10.

[0085] The air inlet pipe 316 and the air outlet pipe 317 are not limited to being straight pipes, but may also have bends. When the air inlet pipe 316 and the air outlet pipe 317 are straight pipes, the extension direction of each air inlet pipe 316 and each air outlet pipe 317 is not limited. For example, please continue to refer to Figures 6 and 8. The air inlet pipe 316 and the air outlet pipe 317 extend along the axial direction Z of the uniform flow chamber 311. For another example, the extension direction of the air inlet pipe 316 and the air outlet pipe 317 may also be inclined to the top wall of the uniform flow chamber 311. When the air inlet pipe 316 and the air outlet pipe 317 have bends, for example, the air inlet pipe 316 may be in an "N" shape, and the process gas completes two changes in flow direction during transportation in the air inlet pipe 316.

[0086] Please continue to refer to Figures 7 and 9. There are multiple rows of air inlets 3121 arranged in sequence along the first radial direction of the uniform flow chamber 311 on the top wall, and each row of air inlets 3121 includes multiple air inlets 3121 arranged in sequence along the second radial direction of the uniform flow chamber 311. Among them, the first radial direction and the second radial direction are perpendicular to each other. It should be noted that in the drawings of each embodiment of the present application, the X-axis direction and the Y-axis direction represent the first radial direction and the second radial direction of the uniform flow chamber 311, respectively. In other words, the air inlets 3121 are arranged in a grid pattern on the top wall of the uniform flow chamber 311, that is, arranged in multiple rows and columns.

[0087] Specifically, the multiple rows of air inlets 3121 can be evenly distributed along a first radial direction, and the multiple columns of air inlets 3121 can be evenly distributed along a second radial direction. In this way, the air inlets 3121 are evenly distributed on the top wall, so that the process gas entering the air guide space S1 can be evenly diffused into each air inlet 3121 along the radial direction of the uniform flow cavity 311, thereby ensuring uniform airflow distribution.

[0088] The arrangement of the gas outlets 3131 can refer to the arrangement of the gas inlets 3121. Specifically, a plurality of gas outlets 3131 are distributed on the bottom wall and are spaced apart in sequence along the first radial direction X, and each gas outlet 3131 includes a plurality of gas outlets 3131 spaced apart in sequence along the second radial direction Y. In other words, the gas outlets 3131 are also arranged in a grid pattern on the bottom wall of the uniform flow chamber 311. Among them, the multiple gas outlets 3131 can be uniformly distributed along the first radial direction X, and the multiple gas outlets 3131 can be uniformly distributed along the second radial direction Y. In this way, the gas outlets 3131 are evenly distributed on the bottom wall and have the same aperture, so that the process gas can be evenly sprayed onto the surface of the wafer 200 along the bottom wall of the uniform flow chamber 311, ensuring the uniformity of the distribution of the process gas flow.

[0089] It is understood that when the inlet pipes 316 and the outlet pipes 317 extend along the axial direction Z of the flow-uniform chamber 311, the arrangement of the inlet pipes 316 is the same as the arrangement of the inlet ports 3121, and the arrangement of the outlet pipes 317 is the same as the arrangement of the outlet ports 3131. Specifically, in the example shown in FIG9 , the inlet pipes 316 are arranged in ten rows along the first radial direction X and in ten columns along the second radial direction Y, and the outlet pipes 317 are arranged in nine rows along the first radial direction X and in nine columns along the second radial direction Y.

[0090] Based on this embodiment, as a further example, the air inlet 3121 and the air outlet 3131 are staggered in both the first radial direction X and the second radial direction Y. Thus, as shown in FIG9 , the air inlet pipe 316 and the air outlet pipe 317 are also staggered in both the first radial direction X and the second radial direction Y.

[0091] In this way, the flow path of the process gas ejected from the gas outlet end of the inlet pipe 316 must change both radially and axially with respect to the flow-uniform chamber 311 before it can flow to the gas inlet end of the outlet pipe 317. This increases the number of changes in the flow direction of the process gas as it passes through the flow-uniform assembly 31, further enhancing the gas-uniformity effect of the flow-uniform assembly 31, thereby significantly improving the uniformity of gas distribution and the uniformity of the corresponding process effects.

[0092] Of course, the number of rows and columns of the air inlet pipes 316 and the air outlet pipes 317 is not limited to the above numbers, and can be designed according to specific needs and working conditions.

[0093] In some embodiments, the arrangement of the air inlets 3121 can also be a circular array, that is, a plurality of circles of air inlets 3121 are provided on the top wall of the uniform flow chamber 311 and are arranged at radial intervals along the process chamber 10, and from the center of the top wall of the uniform flow chamber 311 to the edge of the top wall, each circle of air inlets 3121 gradually increases, and the number of air inlets 3121 in each circle also gradually increases, that is, the air inlets 3121 in the edge area of ​​the top wall of the uniform flow chamber 311 are denser, which is conducive to making the air intake volume of the air inlet pipe 316 near the edge of the process chamber 10 equivalent to the air intake volume of the air inlet pipe 316 near the center of the process chamber 10, further effectively improving the uniformity of the air flow distribution.

[0094] In some embodiments, the orthographic projections of all gas outlets 3131 in the flow-uniform chamber 311 on the supporting surface extend beyond the edge of the wafer 200 supported by the supporting surface of the base 11. In other words, each gas outlet 3131 forms an orthographic projection on the supporting surface. Most of these orthographic projections are located inside the location of the wafer 200, but some orthographic projections have partial or complete areas located outside the location of the wafer 200. In this way, the spray area of ​​the process gas after uniform flow through the flow-uniform chamber 311 can cover the entire wafer 200, ensuring the uniform distribution of the process gas sprayed onto various areas on the surface of the wafer 200, thereby improving the consistency of the process effects at various locations on the wafer.

[0095] Please continue to refer to Figures 6 and 8. The above-mentioned flow uniforming component 31 may specifically include an upper substrate 312, a lower substrate 313, and a first structural ring 314 and a second structural ring 315 arranged between the upper substrate 312 and the lower substrate 313. The upper substrate 312, the first structural ring 314, the second structural ring 315 and the lower substrate 313 together form a flow uniforming cavity 311.

[0096] For example, one first intake manifold 20 may be provided.

[0097] When there is only one first main air inlet pipe 20, the semiconductor device 100 can be a plasma etching device for implementing a semiconductor plasma etching process, and the process gas transported by the first main air inlet pipe 20 into the process chamber 10 is plasma. It is worth noting that the plasma is not limited to being provided by a remote plasma source (RPS), but can also be generated by the inductively coupled plasma (ICP) technology or the capacitively coupled plasma (CCP) technology adopted by the plasma etching device. In this way, during the etching process of the plasma etching device, the uniform flow component 31 can make the plasma diffuse evenly in the process chamber 10 to avoid the problem of more plasma reaching the center of the wafer 200 and less plasma reaching the edge of the wafer 200, thereby improving the uniformity of the etching effect and the consistency of the process results at various locations on the wafer.

[0098] When there is only one first main gas inlet pipe 20, the semiconductor device 100 can also be an atomic layer deposition device for implementing an atomic layer deposition process. The process gas inputted into the process chamber 10 by the first main gas inlet pipe 20 is a precursor. Specifically, during the deposition process, different precursors are alternately delivered to the first main gas inlet pipe 20. In this way, during the deposition process of the atomic layer deposition device, the uniform flow component 31 can uniformly diffuse the precursor in the process chamber 10, thereby avoiding the problem of high precursor concentration reaching the center of the wafer 200 and low precursor concentration reaching the edge of the wafer 200, thereby improving the uniformity and consistency of the deposition process results across the wafer.

[0099] For example, there may be multiple first main air inlet pipes 20, and each first main air inlet pipe 20 may deliver different precursors. The semiconductor device 100 of this embodiment may be an atomic layer deposition device, and precursors may be delivered alternately to each first main air inlet pipe 20 during the deposition process.

[0100] In this way, on the one hand, when each first main air inlet pipe 20 alternately introduces precursors into the process chamber 10, each precursor can be evenly distributed by the uniform flow component 31 and then guided to the wafer 200, so that the precursors are evenly distributed. On the other hand, since each first main air inlet pipe 20 is used to transport a precursor separately, it is beneficial to avoid different precursors sharing the first main air inlet pipe 20, which leads to chemical vapor deposition reaction in the first main air inlet pipe 20, and further helps to avoid the generation of particles in the first main air inlet pipe 20 due to the generation of reaction by-products and the impact on film uniformity, so as to greatly improve the deposition uniformity and process yield.

[0101] This arrangement also effectively prevents the generation of reaction byproducts within the first main air intake pipe 20, which could affect the cross-sectional area of ​​the first main air intake pipe 20, thereby ensuring that the process efficiency and production capacity of the atomic layer deposition equipment are not reduced. Furthermore, it effectively avoids shortening the cleaning cycle of the first main air intake pipe 20, thereby ensuring the service life of the first main air intake pipe 20 and the equipment's utilization rate.

[0102] In summary, the semiconductor device 100 provided in this embodiment is compatible with a variety of semiconductor process types, has good process compatibility and scalability, and has high process uniformity and product yield. Of course, the semiconductor device 100 is not limited to plasma etching equipment or atomic layer deposition equipment, and can also be other semiconductor equipment such as CVD and PECVD.

[0103] To further improve process uniformity, referring to FIG11 , the outlet end of the first main air inlet pipe 20 is connected to a first cover plate 21, which covers the outlet port of the first main air inlet pipe 20. The first cover plate 21 is provided with a plurality of outlets 211. Furthermore, the outlet wall of the first main air inlet pipe 20 is provided with a plurality of outlets 211 spaced circumferentially, and the axial direction of the outlets 211 on the wall is perpendicular to the axial direction Z of the process chamber 10. For example, the plurality of outlets 211 on the wall of the first main air inlet pipe 20 may be evenly distributed along the circumference of the first main air inlet pipe 20.

[0104] In this way, when the process gas flows from the outlet 211 of the first main air inlet pipe 20 to the air guide space S1, the process gas can be divided into multiple small air flows, part of the multiple small air flows are transported from the outlet 211 on the first cover plate 21 along the axial direction Z of the process chamber 10 to the air guide space S1, and the remaining part is transported from the outlet 211 on the pipe wall of the first main air inlet pipe 20 along the radial direction of the process chamber 10 to the air guide space S1.

[0105] In this embodiment, in the process of the process gas flowing from the outlet 211 of the first main air inlet pipe 20 to the gas guide space S1, the process gas can be diffused evenly in the axial direction Z of the process chamber 10 and the radial direction of the process chamber 10, thereby improving the effect of the process gas diffusing to the edge of the process chamber 10, thereby improving the uniformity of the gas distribution at various locations in the process chamber 10.

[0106] As shown in FIG6 , the semiconductor device 100 disclosed in this embodiment may further include a support ring 12 disposed within the process chamber 10. The support ring 12 is fixedly connected to the inner wall of the process chamber 10, and the bottom of the flow leveling assembly 31 is fixedly mounted on the support ring 12. Thus, the support ring 12 supports the flow leveling assembly 31, allowing the flow leveling assembly 31 to be stably mounted within the process chamber 10.

[0107] The lower base plate 313 of the flow-leveling chamber 311 can be fixedly attached to the support ring 12. Referring to Figures 8 and 10 , the bottom of the flow-leveling assembly 31 can also be provided with an annular relief groove 318, into which the support ring 12 is embedded, ensuring that the support ring 12 does not protrude from the bottom surface of the flow-leveling assembly 31. This eliminates the need for the support ring 12 to occupy additional axial space within the process chamber 10.

[0108] In some embodiments, the current equalizing assembly 31 may be grounded. Specifically, any one or more of the upper substrate 312, the lower substrate 313, the first structural ring 314, and the second structural ring 315 may be grounded.

[0109] By grounding the uniform flow component 31, when the semiconductor device 100 of this embodiment is a free radical etching device, the process gas (such as fluorine-based gases such as CF4, NF3) is dissociated by an energy source such as RPS, CCP or ICP to form plasma, and the plasma is introduced into the uniform flow component 31 through the air inlet 3121. The charged particles in the plasma (electrons, charged ions, radicals and other types of charged particles) will be recombined during the transportation process and collide, adsorb and neutralize with the wall of the air inlet pipe 316, the wall of the air outlet pipe 317 and the top wall, side wall and bottom wall of the uniform flow chamber 311, and are thus filtered out. The uncharged free radicals in the plasma are fully and evenly diffused in the uniform flow chamber 311 and can pass through the uniform flow component 31 smoothly, and then are sprayed into the process space S2 through the air outlet 3131, and evenly sprayed onto the surface of the wafer 200 to perform an isotropic etching process. In this way, problems such as vertical etching and damage to the surface material of the wafer 200 caused by the charged particles in the plasma bombarding the surface of the wafer 200 can be effectively avoided. Therefore, the free radical etching equipment can realize isotropic free radical etching, which can be used for free radical lateral etching process and ensure the consistency and uniformity of the process effect.

[0110] It is worth noting that the process gas ejected from the inlet pipe 316 needs to change its flow direction before being transported to the outlet pipe 317. This process increases the probability of charged particles recombining and colliding, adsorbing, and neutralizing with the walls of the inlet pipe 316, the outlet pipe 317, and the top, side, and bottom walls of the uniform flow chamber 311 during transportation. This significantly improves the filtering effect of the uniform flow component 31 on charged particles, thereby further improving the uniformity and consistency of the isotropic etching process. In particular, the dissociated plasma can be introduced into the uniform flow component 31 simultaneously with the chemical gas, thereby achieving effective filtering of the charged particles and radicals in the plasma and uniforming of the free radicals and chemical gas, thereby meeting the requirements of simultaneous free radical etching and chemical etching processes in special processes.

[0111] As can be seen from the above description, in embodiments where the inlet pipe 316 and the outlet pipe 317 are bent, during a free radical etching process in the semiconductor device 100, plasma flowing within the inlet pipe 316 is likely to collide with the pipe wall of the inlet pipe 316 when it changes direction at the bend. This effectively increases the likelihood that charged particles in the plasma will be neutralized and filtered, thereby improving the filtering effect. Similarly, plasma flowing within the outlet pipe 317 is likely to collide with the pipe wall of the outlet pipe 317 when it changes direction at the bend.

[0112] Example 2

[0113] This embodiment is similar to the first embodiment, with the main difference being the different ways in which the air inlet pipe 316 and the air outlet pipe 317 are connected to the uniform flow chamber 311. In the first embodiment, the gas outflow end of the air inlet pipe 316 and the gas inflow end of the air outlet pipe 317 in the uniform flow assembly 31 are both penetrated by their internal channels to achieve communication with the uniform flow chamber 311. In this embodiment, the gas outflow end of the air inlet pipe 316 and the gas inflow end of the air outlet pipe 317 are both sealed, and a first uniform flow hole 3161 communicating with the uniform flow chamber 311 is provided on the wall of the gas outflow end of the air inlet pipe 316, and a second uniform flow hole 3171 communicating with the uniform flow chamber 311 is provided on the wall of the gas inflow end of the air outlet pipe 317.

[0114] It can be understood that the axial directions of the first uniform flow holes 3161 and the second uniform flow holes 3171 are both perpendicular to the axial direction Z of the process chamber 10. A plurality of the first uniform flow holes 3161 and the second uniform flow holes 3171 are provided. Specifically, the plurality of first uniform flow holes 3161 can be evenly distributed and spaced apart along the circumference of the air inlet pipe 316, and the plurality of second uniform flow holes 3171 can be evenly distributed and spaced apart along the circumference of the air outlet pipe 317.

[0115] In this way, in the semiconductor preparation process, the process gas ejected from the air inlet pipe 316 enters the uniform flow chamber 311 along the radial direction of the process chamber 10 through the first uniform flow hole 3161, and the process gas diffuses along the radial direction of the process chamber 10 and flows upward along the axial direction of the process chamber 10, and then enters the air outlet pipe 317 along the radial direction of the process chamber 10 through the second uniform flow hole 3171, and is then ejected from the air outlet 3131 into the process space S2.

[0116] The flow uniformity component 31 of this embodiment, by providing a first flow uniformity hole 3161 on the tube wall of the air inlet pipe 316 and a second flow uniformity hole 3171 on the tube wall of the air outlet pipe 317, can not only change the flow direction of the process gas and realize buffer diffusion in the flow uniformity chamber 311 to achieve air pressure balance, thereby enhancing the flow uniformity effect, but also can uniformly flow the process gas in the radial direction of the flow uniformity chamber 311, thereby improving the uniformity of the process gas diffusion to the edge of the process chamber 10.

[0117] Here, the term "the gas outflow end of the inlet pipe 316 is blocked" should be understood broadly. This can mean that the gas outflow end of the inlet pipe 316 is fixedly connected to the bottom wall of the flow-uniform chamber 311 and thus blocked, or that the internal passage of the inlet pipe 316 does not penetrate the gas outflow end of the inlet pipe 316. Similarly, the gas inflow end of the outlet pipe 317 is fixedly connected to the top wall and thus blocked, or that the internal passage of the outlet pipe 317 does not penetrate the gas inflow end of the outlet pipe 317.

[0118] Any semiconductor device 100 in this embodiment may be a plasma etching device, or may be an atomic layer deposition device, a PECVD device, a CVD device, a free radical etching device, or the like.

[0119] It should be noted that the communication method between the gas outflow end of the air inlet pipe 316 and the uniform flow chamber 311, and the communication method between the gas inflow end of the air outlet pipe 317 and the uniform flow chamber 311 can adopt any one of Example 1 and Example 2, as long as the gas outflow end of the air inlet pipe 316 is located below the gas inflow end of the air outlet pipe 317.

[0120] Example 3

[0121] This embodiment is similar to the first and second embodiments described above, except that, whereas the air intake device 30 in the first and second embodiments only has one uniform flow assembly 31, this embodiment includes multiple uniform flow assemblies 31, and the uniform flow cavities 311 of each uniform flow assembly 31 are interconnected. It should be understood that the figures of this embodiment illustrate two uniform flow assemblies 31, each with the structure of the uniform flow assembly 31 as described in the second embodiment, and should not be construed as limiting the present application.

[0122] Referring to Figure 12 , the air intake device 30 includes a plurality of stacked and spaced flow equalizers 31. Furthermore, the air intake device 30 includes a connecting ring 32 disposed between and connected to any two adjacent flow equalizers 31. The connecting ring 32 and the two adjacent flow equalizers 31 together enclose an air intake space 33.

[0123] The air intake device 30 may be provided with N uniform flow components 31, where N ≥ 2, and N is a positive integer, and the connecting ring 32 is provided with N-1, and accordingly, the number of the air intake spaces 33 is also N-1. In the following text, for the sake of convenience and clarity of description, the uniform flow component 31 closest to the base 11 among the N uniform flow components 31 stacked from top to bottom along the axial direction Z of the uniform flow chamber 311 is referred to as the second uniform flow component 31b, and the remaining uniform flow components 31 are referred to as the first uniform flow component 31a. Among them, the first uniform flow component 31 (also the first uniform flow component 31a) stacked is closest to the upper cover of the process chamber 10, and the top wall of the first uniform flow component 31 (also the first uniform flow component 31a) stacked and the upper cover of the process chamber 10 form an air guide space S1, and the outlet 211 of any first main air intake pipe 20 is located on the air inlet 3121 side of the first uniform flow component 31. The second flow balancing assembly 31b is closest to the lower floor of the process chamber 10. A process space S2 is formed between the bottom wall of the second flow balancing assembly 31b and the base 11. The second flow balancing assembly 31b is fixedly mounted on the support ring 12, ensuring a stable installation within the process chamber 10. To prevent the support ring 12 from occupying space along the axial direction Z of the process chamber 10, only the annular groove 318 is provided at the bottom of the second flow balancing assembly 31b among the N flow balancing assemblies 31.

[0124] When N=2, as shown in FIG12 , there is one first flow-uniform component 31 a , and the air intake device 30 has an air intake space 33 , through which the air outlet 3131 of the first flow-uniform component 31 a communicates with the air intake 3121 of the second flow-uniform component 31 b .

[0125] When N=3, two first flow equalizers 31a are provided: a first first flow equalizer 31a and a second first flow equalizer 31a. The first first flow equalizer 31a is positioned above the second first flow equalizer 31a. An air intake space 33 is formed between the first and second first flow equalizers 31a, and between the second and second first flow equalizers 31a and 31b. The air outlet 3131 of the first first flow equalizer 31a communicates with the air intake 3121 of the second first flow equalizer 31a through the air intake space 33 between the two first flow equalizers 31a. The air outlet 3131 of the second first flow equalizer 31a communicates with the air intake 3121 of the second first flow equalizer 31b through the air intake space 33 between the second first flow equalizer 31a and the second flow equalizer 31b.

[0126] When N>3, the same applies, and this embodiment will not be listed here one by one. In general, the flow balancing chambers 311 of each flow balancing assembly 31 are connected to each other.

[0127] The air intake device 30 of this embodiment is configured with multiple flow-leveling components 31. During the process, the process gas entering the air guide space S1 from the outlet 211 of the first main air intake pipe 20 is evenly distributed from the top to the bottom of the process chamber 10 through the stacked flow-leveling components 31 in sequence, and then ejected from the outlet 3131 of the second flow-leveling component 31b into the process space S2, and then ejected onto the surface of the wafer 200 for film deposition or etching. Thus, compared with the first and second embodiments, the air intake device 30 is designed with multiple levels of flow-leveling components 31 to increase the frequency of flow-leveling of the process gas, thereby significantly improving the uniformity of the process gas flow, and improving the process uniformity and process yield.

[0128] It is also understood that the gas intake device 30 can be applied to highly integrated semiconductor devices 100. Specifically, the process chamber 10 of a highly integrated semiconductor device 100 is typically relatively small in radial direction. The gas intake device 30 of this embodiment is designed with multiple stacked and spaced flow-uniform components 31, enabling a large-volume design. Each flow-uniform component 31 can effectively uniformly flow the process gas. Therefore, even though the gas intake device 30 of this embodiment has a relatively small radial dimension of the process chamber 10, it can still ensure effective and uniform distribution of the process gas.

[0129] In some embodiments, for any two adjacent flow equalizer components 31 , the air outlet 3131 on the bottom wall of one flow equalizer component 31 and the air inlet 3121 on the top wall of the other adjacent flow equalizer component 31 are staggered in the first radial direction X and the second radial direction Y.

[0130] In this embodiment, two uniform flow components 31 are provided as an example. In actual use, when the process gas flowing out of the outlet 3131 of the first uniform flow component 31a is injected into the inlet space 33, its flow direction needs to change along the radial direction of the process chamber 10 before flowing to the inlet 3121 of the second uniform flow component 31b. This helps to improve the diffusion uniformity of the process gas and significantly enhances the uniform flow effect, thereby improving the uniformity of the process results and the process yield rate.

[0131] Of course, it is worth pointing out that in the air intake device 30 provided in this embodiment, any one of the multiple flow-uniform components 31 can also be replaced by the flow-uniform component 31 introduced in the first embodiment.

[0132] It should be noted that in this embodiment, there may be one or more first main air inlet pipes 20. When there is only one first main air inlet pipe 20, the semiconductor device 100 utilizing any of the air inlet devices 30 of this embodiment may be a plasma etching device, an atomic layer deposition device, a CVD device, a PECVD device, a free radical etching device, etc. If the semiconductor device 100 is an atomic layer deposition device, different precursors may be alternately fed into the first main air inlet pipe 20 during the deposition process.

[0133] When there are multiple first main air inlet pipes 20, each first main air inlet pipe 20 may deliver different process gases. The semiconductor device 100 using any of the air inlet devices 30 of this embodiment may be an atomic layer deposition device, and during the deposition process, precursors may be alternately delivered to each first main air inlet pipe 20.

[0134] In addition, one of the multiple flow equalizers 31 is grounded. The semiconductor device 100 of this embodiment is suitable for free radical etching equipment. When the process gas passes through the grounded flow equalizer 31, charged particles in the plasma are filtered, and uncharged free radicals are sprayed onto the surface of the wafer 200 after flow equalization, thereby ensuring isotropic etching.

[0135] Alternatively, in a preferred embodiment, there are multiple grounded flow assemblies 31, for example, each flow assemblies 31 is grounded. This allows the dissociated plasma to pass through the stacked flow assemblies 31 in sequence, not only to diffuse evenly along the radial and axial directions of the process chamber 10, but also to undergo multiple filtrations, thereby improving the filtration effect.

[0136] Example 4

[0137] This embodiment is similar to the third embodiment, except that, while the flow cavities 311 of the various flow balancing assemblies 31 on the air intake device 30 in the third embodiment are interconnected, the flow balancing cavities 311 of the various flow balancing assemblies 31 on the air intake device 30 in this embodiment are not interconnected. It should be understood that the figures of this embodiment illustrate two flow balancing assemblies 31, and that the structure of the flow balancing assemblies 31 is illustrated by way of example using the structure of the second embodiment as an example, and should not be construed as limiting this application.

[0138] In this embodiment, referring to Figures 13 to 18 , the air intake device 30 further includes a plurality of connecting tubes 34 provided for each first flow equalizer assembly 31 a. The air inlet end of the connecting tube 34 is connected to the air outlet 3131 of the corresponding first flow equalizer assembly 31 a, and the air outlet end of the connecting tube 34 passes through all the flow equalizer assemblies 31 below the corresponding first flow equalizer assembly 31 a and is exposed to the air outlet 3131 side of the second flow equalizer assembly 31 b.

[0139] The air intake device 30 also includes at least one second main air intake pipe 35. The air intake end of the second main air intake pipe 35 is located outside the process chamber 10, and the air outlet end of the second main air intake pipe 35 extends from the top of the process chamber 10 into the process chamber 10. The air outlet end of the second main air intake pipe 35 is connected to one of the air intake spaces 33. Each air intake space 33 is connected to at least one second main air intake pipe 35. The second main air intake pipe 35 corresponding to the air intake space 33 passes through the other flow distribution components 31 located above the air intake space 33 and enters the corresponding air intake space 33.

[0140] When N=2, as shown in Figures 13 to 18, the air intake device 30 includes multiple connecting tubes 34 connected in a one-to-one correspondence with the multiple air outlets 3131 of the first flow equalizer assembly 31a. The number of connecting tubes 34 is equal to the number of air outlets 3131 of the first flow equalizer assembly 31a. All connecting tubes 34 extend through the air intake space 33 and the second flow equalizer assembly 31b. The air intake ends of the connecting tubes 34 are connected to the air outlets 3131 of the first flow equalizer assembly 31a, and the air outlet ends of the connecting tubes 34 extend through the bottom wall of the second flow equalizer assembly 31b and are exposed on the side of the air outlets 3131 of the second flow equalizer assembly 31b. Thus, the arrangement of the connecting tubes 34 is the same as the arrangement of the air outlets 3131 and the air outlet pipes 317 of the first flow equalizer assembly 31a.

[0141] According to the description of the first embodiment, the air inlet pipe 316 and the air outlet pipe 317 of the flow uniforming component 31 are arranged in a grid-like manner.

[0142] As shown in Figures 16, 19, and 20, the inlet pipes 316 of the first flow equalizer assembly 31a are specifically arranged in ten rows along the first radial direction X and in eleven rows along the second radial direction Y. The outlet pipes 317 of the first flow equalizer assembly 31a are specifically arranged in eleven rows along the first radial direction X and in ten rows along the second radial direction Y. It should be noted that the holes depicted by dashed lines in Figure 19 are schematic diagrams of the outlet pipes 317 in the first flow equalizer assembly 31a, and the holes depicted by solid lines are schematic diagrams of the inlet pipes 316 in the first flow equalizer assembly 31a. Conversely, the holes depicted by dashed lines in Figure 20 are schematic diagrams of the inlet pipes 316 in the first flow equalizer assembly 31a, and the holes depicted by solid lines are schematic diagrams of the outlet pipes 317 in the first flow equalizer assembly 31a.

[0143] Since the arrangement of the connecting tubes 34 is the same as that of the outlet pipes 317 of the first flow uniforming component 31a, referring to Figures 16 and 19 to 21, the connecting tubes 34 are also arranged in eleven rows along the first radial direction X and in ten columns along the second radial direction Y.

[0144] The inlet pipes 316 and outlet pipes 317 of the second flow-leveling component 31b are also arranged in a grid pattern. According to the examples shown in Figures 16, 22, and 23, the inlet pipes 316 of the second flow-leveling component 31b are specifically arranged in eleven rows along the first radial direction X and in eleven columns along the second radial direction Y. The outlet pipes 317 of the second flow-leveling component 31b are specifically arranged in ten rows along the first radial direction X and in ten columns along the second radial direction Y. It should be noted that the holes depicted by dashed lines in Figure 22 are schematic diagrams of the outlet pipes 317 in the second flow-leveling component 31b, and the schematic diagrams of the inlet pipes 316 and the connecting pipe 34 in the second flow-leveling component 31b are holes depicted by solid lines. The holes depicted by dashed lines in Figure 23 are schematic diagrams of the inlet pipes 316 of the second flow-leveling component 31b, and the schematic diagrams of the outlet pipes 317 and the connecting pipe 34 in the second flow-leveling component 31b are holes depicted by solid lines.

[0145] Please continue to refer to Figures 20 to 23. It is easy to understand that the number of rows of connecting tubes 34 along the first radial direction X is equal to the number of rows of inlet tubes 316 of the second uniform flow assembly 31b, and each row of connecting tubes 34 is arranged side by side with each row of inlet tubes 316 of the second uniform flow assembly 31b. At the same time, the number of rows of connecting tubes 34 arranged along the second radial direction Y is equal to the number of rows of outlet tubes 317 of the second uniform flow assembly 31b, and each row of connecting tubes 34 is arranged side by side with each row of outlet tubes 317 of the second uniform flow assembly 31b. In this way, when each connecting tube 34 passes through the second uniform flow assembly 31b, it can pass through the gap surrounded by two adjacent outlet tubes 317 and two adjacent inlet tubes 316 on the second uniform flow assembly 31b, so as to prevent the connecting tube 34 from interfering with the outlet tube 317 or inlet tube 316 of the second uniform flow assembly 31b. Of course, each connecting pipe 34 may also pass through a gap surrounded by two adjacent rows of air inlet pipes 316 and two adjacent rows of air outlet pipes 317 of the second flow uniforming component 31 b.

[0146] In this example, the process gas flowing out of the outlet 211 of the first main air inlet pipe 20 enters the first flow equalizer assembly 31a, is evenly distributed by the first flow equalizer assembly 31a, enters the connecting pipe 34, and is then directly delivered to the process space S2 from the outlet end of the connecting pipe 34. The process gas flowing out of the outlet end of the second main air inlet pipe 35 enters the air inlet space 33, then flows into the second flow equalizer assembly 31b, is evenly distributed by the second flow equalizer assembly 31b, and is ejected from the outlet 3131 of the second flow equalizer assembly 31b into the process space S2.

[0147] When N=3, two first flow equalizer assemblies 31a are provided: a first first flow equalizer 31a and a second first flow equalizer 31a. The first first flow equalizer 31a is positioned above the second first flow equalizer 31a. An air intake space 33 is formed between the first and second first flow equalizer assemblies 31a, and between the second and second first flow equalizer 31a, 31b. The air intake device 30 includes a plurality of connecting pipes 34 connected in a one-to-one correspondence with the plurality of air outlets 3131 of the first first flow equalizer 31a, and a plurality of connecting pipes 34 connected in a one-to-one correspondence with the plurality of air outlets 3131 of the second first flow equalizer 31a. The multiple connecting tubes 34 connected to the first first flow equalizer assembly 31a penetrate the air intake space 33 between the two first flow equalizer assemblies 31a, and the air outlet ends of the multiple connecting tubes 34 connected to the first first flow equalizer assembly 31a pass through the second first flow equalizer assembly 31a and the second flow equalizer assembly 31b to be exposed at the bottom of the second flow equalizer assembly 31b. The multiple connecting tubes 34 connected to the second first flow equalizer assembly 31a penetrate the air intake space 33 between the second first flow equalizer assembly 31a and the second flow equalizer assembly 31b, and the air outlet ends of the multiple connecting tubes 34 connected to the second first flow equalizer assembly 31a are exposed at the bottom of the second flow equalizer assembly 31b.

[0148] In this example, the process gas flowing out of the outlet 211 of the first main air inlet pipe 20 is homogenized by the first first flow equalizer 31a and then directly delivered to the process space S2 via the connecting pipe 34. The process gas flowing out of the outlet end of the second main air inlet pipe 35 corresponding to the air inlet space 33 between the two first flow equalizers 31a is homogenized by the second first flow equalizer 31a and then directly delivered to the process space S2 via the connecting pipe 34. The process gas flowing out of the outlet end of the second main air inlet pipe 35 corresponding to the air inlet space 33 between the second first flow equalizer 31a and the second flow equalizer 31b is homogenized by the second flow equalizer 31b and then ejected into the process space S2 via the outlet 3131 of the second flow equalizer 31b.

[0149] When N>3, the same applies, and this embodiment will not be listed here one by one.

[0150] In general, when the air intake device 30 is provided with multiple flow equalizers 31 and the air intake device 30 is provided with a connecting pipe 34, each flow equalizer 31 is independent of each other. With this arrangement, each flow equalizer 31 can independently equalize the process gas delivered to its corresponding flow equalizer chamber 311.

[0151] Moreover, in the air intake device 30 of this embodiment, the second main air intake pipe 35 can also be fixedly connected to the flow uniforming component 31 it passes through, thereby improving the structural reliability of the air intake device 30.

[0152] The above-mentioned intake space 33 can be correspondingly communicated with multiple second main intake pipes 35, and can also be correspondingly communicated with one second main intake pipe 35.

[0153] In the examples shown in Figures 13 and 15, the first main air inlet pipe 20 and the second main air inlet pipe 35 are both one. When the semiconductor equipment 100 using the air inlet device 30 of this embodiment is an atomic layer deposition equipment, different precursors can be alternately introduced into the first main air inlet pipe 20 and the second main air inlet pipe 35.

[0154] Specifically, referring to FIG24 , a first precursor is introduced into the first main air inlet pipe 20, flows out of the outlet 211 of the first main air inlet pipe 20 into the air guide space S1, then enters the corresponding air inlet pipe 316 through the air inlet 3121 of the first uniform flow component 31a, flows from the gas outlet end of the air inlet pipe 316 into the uniform flow chamber 311 of the first uniform flow component 31a, and then flows into the interior of the air outlet pipe 317 after being diffused and uniformed in the radial and axial directions of the process chamber 10. Then, it flows from the air outlet 3131 corresponding to the air outlet pipe 317 into the connecting pipe 34 corresponding to the air outlet 3131, then flows along the connecting pipe 34 to the air outlet 3131 side of the second uniform flow component 31b, and is then ejected into the process space S2, where it is blown onto the surface of the wafer 200. The flow path of the first precursor is shown by a solid arrow in FIG24 .

[0155] Specifically, referring to FIG. 25 , a second precursor is introduced into the second main inlet pipe 35 , flows out of the outlet end of the second main inlet pipe 35 into the inlet space 33 , then enters the corresponding inlet pipe 316 through the inlet port 3121 of the second uniform flow assembly 31 b , flows from the gas outlet end of the inlet pipe 316 into the uniform flow chamber 311 of the second uniform flow assembly 31 b , and then diffuses and uniformizes along the radial and axial directions of the process chamber 10 before flowing into the outlet pipe 317 . The second precursor is then ejected from the outlet port 3131 corresponding to the outlet pipe 317 into the process space S2 and swept onto the surface of the wafer 200 . The flow path of the second precursor is indicated by the dotted arrow in FIG. 25 .

[0156] By adopting this design, each flow-leveling assembly 31 can evenly distribute the gas of a single precursor. Compared with related technologies, this embodiment not only prevents different precursors from sharing the same first main air inlet pipe 20, but also prevents different precursors from sharing the same flow-leveling assembly 31 for flow distribution. This effectively avoids the problem of different precursors sharing the same flow-leveling assembly 31, which could lead to chemical vapor deposition reactions within the flow-leveling assembly 31. This helps prevent the generation of reaction byproducts within the flow-leveling assembly 31 that could affect flow uniformity, thereby ensuring the quality of thin film preparation and the consistency and uniformity of process effects.

[0157] In some embodiments, referring to Figures 13 and 15 , the outlet end of the second main air inlet pipe 35 is connected to a second cover plate 351, which covers the outlet port of the second main air inlet pipe 35. The second cover plate 351 has a plurality of openings 352 distributed thereon. Furthermore, the wall of the outlet end of the second main air inlet pipe 35 has a plurality of openings 352 spaced circumferentially thereon, with the axial direction of the openings 352 on the wall being perpendicular to the axial direction Z of the process chamber 10. Specifically, the plurality of openings 352 on the wall of the second main air inlet pipe 35 can be evenly distributed along the circumference of the second main air inlet pipe 35.

[0158] In this way, when the process gas flows from the outlet end of the second main air inlet pipe 35 to the air inlet space 33, the process gas can be divided into multiple small air flows, part of the multiple small air flows enters the air inlet space 33 from the opening 352 on the second cover plate 351 along the axial direction Z of the process chamber 10, and the remaining part enters the air inlet space 33 from the opening 352 on the tube wall along the radial direction of the process chamber 10.

[0159] In this embodiment, in the process of the process gas flowing from the outlet end of the second main air inlet pipe 35 to the air inlet space 33, the gas can not only be uniformly distributed along the axial direction Z of the process chamber 10, but also diffused uniformly along the radial direction of the process chamber 10, thereby improving the effect of the process gas diffusing to the edge of the process chamber 10, and further improving the uniformity of gas distribution and the uniformity and consistency of the process effect.

[0160] As an embodiment, each of the plurality of flow-uniform components 31 may be grounded, so that each flow-uniform component 31 can filter the process gas flowing into the component.

[0161] It is understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present application, and the present application is not limited thereto. Those skilled in the art may make various modifications and improvements without departing from the spirit and substance of the present application, and such modifications and improvements are also considered to be within the scope of protection of the present application.

Claims

1. A flow-uniform component, characterized in that: The uniform flow assembly has a uniform flow cavity inside, the top wall of the uniform flow cavity is provided with a plurality of air inlets penetrating the top wall along the thickness direction thereof, and the bottom wall of the uniform flow cavity is provided with a plurality of air outlets penetrating the bottom wall along the thickness direction thereof; The uniform flow chamber is provided with a plurality of air inlet pipes corresponding to the plurality of air inlets one by one, and a plurality of air outlet pipes corresponding to the plurality of air outlets one by one; the first end of the air inlet pipe is connected to the corresponding air inlet, and the second end of the air inlet pipe is connected to the uniform flow chamber; the first end of the air outlet pipe is connected to the corresponding air outlet, and the second end of the air outlet pipe is connected to the uniform flow chamber; the second end of the air inlet pipe is located below the second end of the air outlet pipe.

2. The flow-uniform assembly according to claim 1, characterized in that: The second end of the air inlet pipe is closed, and a plurality of first uniform flow holes are arranged at intervals along the circumferential direction on the pipe wall of the second end of the air inlet pipe; And / or, the second end of the air outlet pipe is closed, and a plurality of second uniform flow holes are arranged at intervals along the circumferential direction on the pipe wall of the second end of the air outlet pipe.

3. The flow-uniform assembly according to claim 1, characterized in that: The channel inside the air intake pipe passes through the corresponding second end of the air intake pipe, and the second end of the air intake pipe is close to the bottom wall and forms a first gap with the bottom wall; And / or, the channel inside the air outlet pipe passes through the corresponding second end of the air outlet pipe, and the second end of the air outlet pipe is close to the top wall and forms a second gap with the top wall.

4. The flow-uniform assembly according to claim 3, characterized in that: When a first gap is formed between the second end of the air inlet pipe and the bottom wall and a second gap is formed between the second end of the air outlet pipe and the top wall, the dimensions of the first gap and the second gap in the axial direction of the uniform flow chamber are both greater than or equal to 0.1 mm and less than or equal to one half of the height of the uniform flow chamber.

5. The flow-uniform assembly according to claim 1, characterized in that: All the air inlet pipes and all the air outlet pipes extend along the axial direction of the flow-uniform cavity; The top wall is provided with a plurality of rows of air inlets spaced in sequence along a first radial direction of the uniform flow cavity, and each row of air inlets includes a plurality of air inlets spaced in sequence along a second radial direction of the uniform flow cavity; or, the top wall is provided with a plurality of circles of air inlets spaced in sequence along a radial direction of the uniform flow cavity, and the aperture of each circle of air inlets gradually increases from the center to the edge of the top wall, and the number of air inlets in each circle gradually increases; The bottom wall is provided with a plurality of rows of the air outlets spaced in sequence along a first radial direction, and each row of the air outlets includes a plurality of the air outlets spaced in sequence along a second radial direction; The air inlet and the air outlet are staggered with each other in the first radial direction and the second radial direction; wherein the first radial direction, the second radial direction and the axial direction of the flow-uniform chamber are perpendicular to each other.

6. The flow-uniform assembly according to claim 1, characterized in that: The orthographic projections of all the gas outlets on the uniform flow cavity on the carrying surface of the base of the semiconductor device exceed the edge of the wafer carried by the carrying surface.

7. An air intake device, characterized in that: include: One or a plurality of flow-uniform components as claimed in any one of claims 1 to 6 and at least one first main air intake pipe arranged in a stacked and spaced manner; When the air intake device includes a flow equalizer assembly, the outlet of the first main air intake pipe is located at the air intake side of the flow equalizer assembly; When the air intake device includes a plurality of the flow-leveling components, the outlet of the first main air intake pipe is located at the air intake side of the first flow-leveling component stacked from top to bottom along the axial direction of the flow-leveling cavity.

8. The air intake device according to claim 7, characterized in that: When the air intake device includes a plurality of the flow-uniform components, the air intake device further includes: A connecting ring is arranged between any two adjacent flow-leveling components and connected to the two adjacent flow-leveling components, and the connecting ring and the two adjacent flow-leveling components jointly enclose an air intake space.

9. The air intake device according to claim 8, characterized in that: The last one of the plurality of flow-uniform components stacked from top to bottom along the axial direction of the flow-uniform cavity is a second flow-uniform component, and the remaining flow-uniform components are all first flow-uniform components; The air intake device further comprises: at least one second main air intake pipe and a plurality of connecting pipes provided for each of the first flow-uniform components; The air inlet end of the connecting pipe is connected to the air outlet of the corresponding first flow equalizer component, and the air outlet end of the connecting pipe passes through all the flow equalizer components located below the corresponding first flow equalizer component and is exposed to the air outlet side of the second flow equalizer component; Each of the air intake spaces is connected to at least one of the second main air intake pipes; the second main air intake pipe corresponding to the air intake space passes through other uniform flow components located above the air intake space and enters the corresponding air intake space.

10. The air intake device according to claim 9, characterized in that: Each of the air intake spaces corresponds to one of the second main air intake pipes.

11. The air intake device according to claim 9, characterized in that: When the air intake device includes two flow-leveling components, the air intake space is one, and the number of the connecting pipes is the same as the number of the air outlets of the first flow-leveling components; The connecting pipe runs through the air inlet space and the second flow equalizer, and the air inlet end of the connecting pipe is connected to the air outlet of the first flow equalizer, and the air outlet end of the connecting pipe is exposed to the air outlet side of the second flow equalizer.

12. The air intake device according to any one of claims 9 to 11, characterized in that: The outlet end of the first main air inlet pipe is connected to a first cover plate, the first cover plate covers the port of the outlet end of the first main air inlet pipe, a plurality of outlets are distributed on the first cover plate, and a plurality of outlets are arranged at intervals along the circumferential direction on the pipe wall of the outlet end of the first main air inlet pipe; And / or, the outlet end of the second main air intake pipe is connected to a second cover plate, the second cover plate covers the port of the outlet end of the second main air intake pipe, a plurality of openings are distributed on the second cover plate, and a plurality of openings are circumferentially spaced on the pipe wall of the outlet end of the second main air intake pipe.

13. A semiconductor device, characterized in that: include: A process chamber, wherein a susceptor is provided inside, and the susceptor has a carrying surface for carrying a wafer; as well as The air intake device according to any one of claims 7 to 12, wherein the flow equalizer is located in the process chamber, and the flow equalizer is opposite to the base; the air intake end of the first main air intake pipe is located outside the process chamber, and the air outlet end of the first main air intake pipe is located in the process chamber.

14. The semiconductor device according to claim 13, wherein: It also includes a support ring disposed inside the process chamber, wherein the support ring is fixedly connected to an inner wall of the process chamber; When the air intake device includes a flow-leveling assembly, the bottom of the flow-leveling assembly is fixedly disposed on the support ring; When the air intake device includes a plurality of the flow-leveling assemblies, the last flow-leveling assembly stacked from top to bottom along the axial direction of the flow-leveling cavity is the second flow-leveling assembly, and the bottom of the second flow-leveling assembly is fixedly disposed on the support ring.

15. The semiconductor device according to claim 13 or 14, characterized in that: At least one of the flow-uniform components is grounded on the air intake device.

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