Member for semiconductor manufacturing device

Abstract

A wafer placement table 10 comprises: a first ceramic plate 21 having a wafer placement surface 22 on an upper surface 21a and having an electrostatic electrode 23 built therein; a second ceramic plate 26 disposed on a lower surface 21b side of the first ceramic plate 21; a cooling plate 30 disposed on a lower surface 26b side of the second ceramic plate 26; a first bonding layer 41 that is made of metal, bonds the lower surface 21b of the first ceramic plate 21 and an upper surface 26a of the second ceramic plate 26, and is used as an RF electrode; and a second bonding layer 42 that is made of metal or an inorganic composition and bonds the lower surface 26b of the second ceramic plate 26 and an upper surface 30a of the cooling plate 30.

Description

Semiconductor manufacturing equipment components

[0001] The present invention relates to a member for a semiconductor manufacturing device.

[0002] Wafer mounting tables have been known as components for semiconductor manufacturing equipment. For example, Patent Document 1 discloses a wafer mounting table including a ceramic plate having a wafer mounting surface on its upper surface and an electrode embedded therein, a cooling plate made of a metal matrix composite material with a refrigerant flow path formed therein, and a metal bonding layer bonding the lower surface of the ceramic plate to the upper surface of the cooling plate. The chamber in which the wafer mounting table is installed has a flat electrode above the wafer mounting surface. In Patent Document 1, high-frequency power is applied between the flat electrode of the chamber and the metal bonding layer of the wafer mounting table to generate plasma above the wafer mounting surface.

[0003] Pamphlet of International Publication No. 2023 / 037698

[0004] In the wafer mounting table of Patent Document 1, the ceramic plate and cooling plate are bonded with metal. Although the corrosion resistance of the bonding layer is higher than when resin is used, the higher thermal conductivity of the metal makes the wafer more susceptible to cooling. To prevent the wafer from cooling too much, it is possible to increase the temperature of the coolant flowing through the coolant flow path or to embed a heater electrode in the ceramic plate and heat the ceramic plate with the heater electrode. However, these methods are undesirable because they waste power. Another option is to increase the thickness of the ceramic plate to prevent the wafer from cooling too much. However, when using a metal bonding layer as an RF electrode, the distance between the metal bonding layer and the wafer mounting surface increases, resulting in a problem of reduced plasma generation efficiency.

[0005] The present invention has been made to solve the above-mentioned problems, and its main object is to prevent the wafer from cooling too much without wasting power, and to improve plasma generation efficiency in a semiconductor manufacturing equipment component in which a ceramic plate and a cooling plate are bonded via a bonding layer with high thermal conductivity, while maintaining high corrosion resistance of the bonding layer.

[0006] [1] A semiconductor manufacturing equipment member of the present invention comprises: a first ceramic plate having a wafer mounting surface on its upper surface and incorporating an electrode; a second ceramic plate arranged on the lower surface side of the first ceramic plate; a cooling plate arranged on the lower surface side of the second ceramic plate; a first bonding layer made of metal and used as an RF electrode, bonding the lower surface of the first ceramic plate to the upper surface of the second ceramic plate; and a second bonding layer made of metal or an inorganic composition, bonding the lower surface of the second ceramic plate to the upper surface of the cooling plate.

[0007] This semiconductor manufacturing equipment component includes a first bonding layer made of metal, which bonds the lower surface of a first ceramic plate to the upper surface of a second ceramic plate and serves as an RF electrode; and a second bonding layer made of metal or an inorganic composition, which bonds the lower surface of the second ceramic plate to the upper surface of a cooling plate. The second bonding layer has higher corrosion resistance than resin. Furthermore, the thickness of the ceramic plate above the second bonding layer includes the thickness of the second ceramic plate in addition to the thickness of the first ceramic plate, preventing excessive cooling of the wafer without wasting power. Furthermore, because the first ceramic plate is present above the first bonding layer, which serves as an RF electrode, but the second ceramic plate is not, plasma generation efficiency is improved.

[0008] In this specification, the present invention may be described using terms such as up / down, left / right, front / back, etc., but these terms merely refer to relative positional relationships. Therefore, when the orientation of a semiconductor manufacturing equipment component is changed, up / down may become left / right, or left / right may become up / down, but such cases are also within the technical scope of the present invention. Furthermore, the term "RF electrode" refers to one of a pair of flat electrodes for generating plasma, and may be an electrode to which high frequency is applied (in which case the other electrode is connected to ground) or an electrode connected to ground (in which case high frequency is applied to the other electrode).

[0009] [2] In the semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member described in [1] above), the thickness of the first bonding layer is preferably 0.1 mm or more and 1 mm or less. If the thickness is 0.1 mm or more, heat generation when RF propagates through the first bonding layer can be suppressed, allowing plasma to be generated efficiently. Furthermore, if the thickness is 1 mm or less, problems caused by differences in thermal expansion between the first and second ceramic plates and the first bonding layer are less likely to occur.

[0010] [3] In the semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member according to [1] or [2]), the volume resistivity of the first bonding layer at 20°C is 1 × 10 -4 In this way, when the first bonding layer is used as an RF electrode, the resistance of the first bonding layer is sufficiently low so that the first bonding layer is unlikely to generate heat and is unlikely to become a factor that impairs the thermal uniformity of the wafer.

[0011] [4] In the semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member according to any one of [1] to [3] above), the absolute value of the difference between the linear thermal expansion coefficient of the first ceramic plate at 40 to 400°C and the linear thermal expansion coefficient of the second ceramic plate at 40 to 400°C is 1.5 x 10 -6 / K or less, it is possible to suppress the occurrence of problems caused by the difference in thermal expansion between the first ceramic plate and the second ceramic plate.

[0012] [5] In the semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member according to any one of [1] to [4] above), the cooling plate is formed of a metal or a metal ceramic composite material, and the absolute value of the difference in the linear thermal expansion coefficient between the cooling plate and the second ceramic plate at 40 to 400°C is 1.5 × 10 -6 / K or less. This can prevent problems caused by a difference in thermal expansion between the second ceramic plate and the cooling plate.

[0013] [6] The semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member according to any one of [1] to [5]) may include an RF electrode hole extending from the underside of the cooling plate through the cooling plate, the second bonding layer, and the second ceramic plate to the first bonding layer, into which an RF electrode connecting member directly connected to the first bonding layer is inserted.

[0014] [7] In the semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member described in [6] above), the RF electrode hole may have an insulating tube into which the RF electrode connecting member is inserted. This prevents the RF electrode connecting member from coming into contact with the cooling plate or the second bonding layer and causing a short circuit, even if the cooling plate or the RF electrode connecting member is conductive.

[0015] 1 is a vertical cross-sectional view of the wafer mounting table 10 installed in the chamber 90. FIG. 2 is a plan view of the wafer mounting table 10. FIG. 3 is an enlarged view of the area surrounded by the two-dot chain line circle in FIG.

[0016] A preferred embodiment of the present invention will be described below with reference to the drawings. Fig. 1 is a vertical cross-sectional view of a wafer stage 10 installed in a chamber 90, and Fig. 2 is a plan view of the wafer stage 10.

[0017] The wafer mounting table 10 is an example of a semiconductor manufacturing equipment component of the present invention and is used for performing CVD, etching, or the like on a wafer W using plasma. As shown in FIG. 1 , the wafer mounting table 10 includes a first ceramic plate 21, a second ceramic plate 26, a cooling plate 30, a first bonding layer 41, and a second bonding layer 42. In this embodiment, the ceramic plate 20 is a bonded body in which the first ceramic plate 21 and the second ceramic plate 26 are bonded together by the first bonding layer 41, and the ceramic plate 20 and the cooling plate 30 are bonded together via the second bonding layer 42.

[0018] The first ceramic plate 21 is a circular plate member having a step along its outer periphery. The first ceramic plate 21 is formed of a ceramic material such as alumina or aluminum nitride and has a circular wafer mounting surface 22 on its upper surface 21a. A wafer W is mounted on the wafer mounting surface 22. As shown in FIG. 2, a seal band 22a is formed on the wafer mounting surface 22 along the outer edge of the upper surface of the first ceramic plate 21, and multiple flat circular small protrusions 22b are formed on the entire inner surface of the seal band 22a. The seal band 22a and the circular small protrusions 22b have the same height, e.g., several micrometers to several tens of micrometers. As shown in FIG. 1, the first ceramic plate 21 incorporates an electrostatic electrode 23 on its side closer to the wafer mounting surface 22. The electrostatic electrode 23 is a planar mesh electrode embedded so as to cover almost the entire surface of the wafer mounting surface 22 in a plan view. The electrostatic electrode 23 is connected to a DC power supply 54 via a power supply member 52. A low-pass filter (LPF) 53 is provided between the electrostatic electrode 23 and the DC power supply 54. When a DC voltage is applied to the electrostatic electrode 23, the wafer W is attracted and fixed to the wafer mounting surface 22 (specifically, the upper surfaces of the seal bands 22a and the small circular protrusions 22b) by electrostatic attraction, and when the application of the DC voltage is stopped, the wafer W is released from the attraction and fixation to the wafer mounting surface 22. The power supply member 52 is electrically insulated from the cooling plate 30 and the first and second bonding layers 41, 42.

[0019] The second ceramic plate 26 is disposed on the lower surface 21b side of the first ceramic plate 21. The second ceramic plate 26 is a disk member having a diameter substantially equal to the diameter of the lower surface 21b of the first ceramic plate 21. The material used for the second ceramic plate 26 has a linear thermal expansion coefficient between 40 and 400°C that differs by an absolute value of 1.5×10 from that of the ceramic material used for the first ceramic plate 21. -6 / K or less, and preferably 1.0 × 10 -6 / K or less, and more preferably 0.5 × 10 -6 / K or less. For example, if the first ceramic plate 21 is made of alumina, the second ceramic plate 26 is preferably made of alumina or yttria. Furthermore, the thermal conductivity of the second ceramic plate 26 is preferably equal to or less than that of the first ceramic plate 21. In this way, the second ceramic plate 26 functions as a thermal resistance layer, and it is possible to effectively prevent the wafer W from being cooled too much.

[0020] The cooling plate 30 is disposed on the lower surface 26b of the second ceramic plate 26. The cooling plate 30 is a circular plate made of a metal or a ceramic composite material. The diameter of the cooling plate 30 is approximately the same as the diameter of the second ceramic plate 26. Examples of metal-ceramic composite materials include metal matrix composites (MMCs) and ceramic matrix composites (CMCs). Specific examples of such composite materials include materials containing Si, SiC, and Ti, and materials in which porous SiC is impregnated with Al and / or Si. A material containing Si, SiC, and Ti is called SiSiCTi, a material in which porous SiC is impregnated with Al is called AlSiC, and a material in which porous SiC is impregnated with Si is called SiSiC. Examples of metals include Mo. The material used for the cooling plate 30 has an absolute value of the difference in linear thermal expansion coefficient between 40 and 400°C from the ceramic material used for the second ceramic plate 26 of 1.5 × 10 -6 / K or less, and preferably 1.0 × 10 -6 / K or less, and more preferably 0.5 × 10 -6 It is more preferable that the value is 0.1 / K or less.

[0021] Table 1 shows the linear thermal expansion coefficients of representative materials at 40 to 400°C.

[0022]

[0023] The cooling plate 30 incorporates a refrigerant flow path 32 through which a refrigerant can circulate. The refrigerant flow path 32 is formed in a single stroke from one end (inlet) to the other end (outlet) across almost the entire surface of the wafer mounting table 10 in a plan view. The refrigerant flow path 32 may be formed, for example, in a spiral shape in a plan view ( FIG. 2 ) or a zigzag shape. The refrigerant is supplied to one end (inlet) of the refrigerant flow path 32 from a refrigerant circulation device (not shown), passes through the refrigerant flow path 32, and is discharged from the other end (outlet) of the refrigerant flow path 32 and returns to the refrigerant circulation device. The refrigerant circulation device can adjust the refrigerant to a desired temperature. The refrigerant is preferably a liquid, preferably an electrically insulating liquid. Examples of electrically insulating liquids include a fluorine-based inert liquid.

[0024] The first bonding layer 41 is a metal bonding layer that bonds the lower surface 21b of the first ceramic plate 21 to the upper surface 26a of the second ceramic plate 26. The first bonding layer 41 is used as an RF electrode. The thickness of the first bonding layer 41 is preferably 0.1 mm to 1 mm, more preferably 0.3 mm to 1 mm, and even more preferably 0.3 mm to 0.5 mm. A thickness of the first bonding layer 41 of 0.1 mm or more makes it easier to prevent the RF electrode holes 48 from penetrating through the first bonding layer 41 when forming them, and a thickness of 0.3 mm or more makes this even easier. A thickness of the first bonding layer 41 of 1 mm or less makes it less likely for defects (e.g., cracks) to occur in the wafer mounting table 10 due to differences in thermal expansion between the first and second ceramic plates 21, 26 and the first bonding layer 41, and a thickness of 0.5 mm or less makes it even less likely for defects to occur. The first bonding layer 41 is preferably an Al or Ti layer, and is formed by, for example, TCB (thermal compression bonding). TCB refers to a known method in which a metal bonding material is sandwiched between two members to be bonded, and the two members are pressure-bonded while being heated to a temperature below the solidus temperature of the metal bonding material. The volume resistivity of the first bonding layer 41 at 20°C is 1×10 -4 It is preferable that the resistivity is Ωcm or less, and 1×10 -5For example, the first bonding layer 41 may be made of Al or Ti, and the volume resistivity of Al and Ti at 20° C. is 0.28×10 -5 Ωcm, 5.33×10 -5 Therefore, it is more preferable that the first bonding layer 41 is made of Al.

[0025] The second bonding layer 42 is a bonding layer with a higher thermal conductivity than resin, bonding the lower surface 26b of the second ceramic plate 26 to the upper surface 30a of the cooling plate 30. Here, the second bonding layer 42 is made of a metal, such as Al or Ti. The second bonding layer 42 bonds the lower surface 26b of the second ceramic plate 26 to the upper surface 30a of the cooling plate 30 without any gaps. The thickness of the second bonding layer 42 is preferably approximately 0.1 mm. The second bonding layer 42 is preferably made of the same material as the first bonding layer 41. This allows the first bonding layer 41 and the second bonding layer 42 to be bonded together, thereby reducing the number of manufacturing steps. The second bonding layer 42 may be a layer formed by TCB (thermal compression bonding), or may be a layer formed of solder or metal brazing material.

[0026] Table 2 shows the thermal conductivities of representative materials.

[0027]

[0028] The RF electrode hole 48 is provided from the lower surface 30b of the cooling plate 30 through the cooling plate 30, the second bonding layer 42, and the second ceramic plate 26 to the first bonding layer 41. A metal RF rod (RF electrode connecting member) 62 directly connected to the first bonding layer 41 is inserted into the RF electrode hole 48. The RF rod 62 is inserted into an insulating tube 49 fixed to the RF electrode hole 48 with an adhesive. The insulating tube 49 serves to prevent the RF rod 62 from contacting the cooling plate 30 or the second bonding layer 42. The RF rod 62 is biased upward by a spring, and the tip of the RF rod 62 is firmly pressed against the lower surface of the first bonding layer 41. The RF rod 62 is connected to an RF power source 64 via a high-pass filter (HPF) 63.

[0029] A portion of the side surface of the first ceramic plate 21, the side surface of the first bonding layer 41, the side surface of the second ceramic plate 26, the side surface of the second bonding layer 42, and the side surface of the cooling plate 30 are covered with an insulating film 50. Examples of the insulating film 50 include a thermally sprayed film of alumina, yttria, or the like. The insulating film 50 prevents the side surface of the first bonding layer 41, the side surface of the second bonding layer 42, and the side surface of the cooling plate 30 from being corroded by plasma or the like.

[0030] In the wafer mounting table 10, for example, the first and second ceramic plates 21, 26 may be made of alumina, the cooling plate 30 may be made of SiSiCTi, and the first and second bonding layers 41, 42 may be made of Al. Alternatively, the first and second ceramic plates 21, 26 may be made of aluminum nitride, the cooling plate 30 may be made of Mo, and the first and second bonding layers 41, 42 may be made of Al. The first and second bonding layers 41, 42 may be made of TCB. The cooling plate 30 may be formed by separating an upper plate and a lower plate at the bottom surface of the refrigerant flow path 32 and bonding the two plates together with Al using TCB.

[0031] Next, a usage example of the wafer mounting table 10 configured as described above will be described. First, with the wafer mounting table 10 installed in the chamber 90, a wafer W is placed on the wafer mounting surface 22. The chamber 90 is then depressurized using a vacuum pump to a predetermined vacuum level, and a DC voltage is applied to the electrostatic electrode 23 to generate an electrostatic adsorption force, thereby adsorbing and fixing the wafer W to the wafer mounting surface 22 (specifically, the upper surface of the seal band 22a or the upper surface of the small circular protrusions 22b). Next, a reactive gas atmosphere at a predetermined pressure (e.g., several tens to several hundreds of Pa) is created inside the chamber 90. In this state, a high-frequency voltage is applied between the upper electrode 92 provided on the ceiling of the chamber 90 and the first bonding layer 41 of the wafer mounting table 10 to generate plasma. The surface of the wafer W is then processed by the generated plasma. A coolant is circulated through the coolant flow path 32 of the cooling plate 30.

[0032] The wafer mounting table 10 described above includes a first metal bonding layer 41, which serves as an RF electrode and bonds the lower surface 21b of the first ceramic plate 21 to the upper surface 26a of the second ceramic plate 26, and a second metal bonding layer 42, which serves as an RF electrode and bonds the lower surface 26b of the second ceramic plate 26 to the upper surface 30a of the cooling plate 30. The second bonding layer 42 has higher corrosion resistance than resin and can suppress deterioration over time and temperature rise at the periphery. Furthermore, the thickness of the ceramic plate 20 above the second bonding layer 42 includes the thickness of the first ceramic plate 21 as well as the thickness of the second ceramic plate 26, preventing excessive cooling of the wafer W without wasting power. Furthermore, because the first ceramic plate 21 exists above the first bonding layer 41, which serves as an RF electrode, but the second ceramic plate 26 does not, plasma generation efficiency is improved.

[0033] The thickness of the first bonding layer 41 is preferably 0.1 mm or more and 1 mm or less. If the thickness of the first bonding layer 41 is 0.1 mm or more, heat generation when RF propagates through the first bonding layer 41 can be suppressed, and plasma can be generated efficiently. If the thickness of the first bonding layer 41 is 1 mm or less, defects (such as peeling) due to differences in thermal expansion between the first and second ceramic plates 21, 26 and the first bonding layer 41 are less likely to occur.

[0034] Furthermore, the volume resistivity of the first bonding layer 41 at 20° C. is 1×10 -4 It is preferable that the resistivity is Ωcm or less, and 1×10 -5 In this way, when first bonding layer 41 is used as an RF electrode, first bonding layer 41 has a sufficiently low resistance, and therefore first bonding layer 41 is less likely to generate heat when high frequency power is applied between first bonding layer 41 and upper electrode 92, and is less likely to become a factor that impairs the thermal uniformity of wafer W.

[0035] Furthermore, the absolute value of the difference between the linear thermal expansion coefficient of the first ceramic plate 21 at 40 to 400°C and the linear thermal expansion coefficient of the second ceramic plate 26 at 40 to 400°C is 1.5×10 -6 / K or less. This can prevent defects (such as cracks) caused by the difference in thermal expansion between the first ceramic plate 21 and the second ceramic plate 26.

[0036] The cooling plate 30 is made of a metal or a metal ceramic composite material, and the absolute value of the difference in the linear thermal expansion coefficient between the cooling plate 30 and the second ceramic plate 26 at 40 to 400°C is 1.5×10 -6 / K or less. This can prevent defects (such as cracks) caused by the difference in thermal expansion between the second ceramic plate 26 and the cooling plate 30.

[0037] Furthermore, the RF electrode hole 48 has an insulating tube 49 into which the RF rod 62 is inserted. Therefore, even if the cooling plate 30 is conductive and the RF rod 62 is a metal rod, it is possible to prevent the RF rod 62 from coming into contact with the cooling plate 30 or the second bonding layer 42 and causing a short circuit.

[0038] In the wafer mounting table 10, the ceramic plate 20 is formed by bonding the first ceramic plate 21 and the second ceramic plate 26, each incorporating an electrostatic electrode 23, with a first bonding layer 41 that functions as an RF electrode. However, it is also possible to use a single ceramic plate incorporating both an electrostatic electrode and an RF electrode. However, if the RF electrode is embedded in the ceramic plate, the RF electrode must be thin (approximately several tens of micrometers) to prevent delamination between the RF electrode material and the ceramic material during manufacturing due to differences in thermal expansion between the two. In recent years, there has been a demand for the use of high-power plasma. However, thin RF electrodes can generate significant heat at the connection with the RF rod, potentially impairing the thermal uniformity of the wafer. In contrast, because the wafer mounting table 10 utilizes the first bonding layer 41 as an RF electrode, the first bonding layer 41 can be thick (0.1 mm or more), thereby suppressing heat generation at the connection with the RF rod 62.

[0039] It goes without saying that the present invention is not limited to the above-described embodiment, and can be embodied in various forms as long as they fall within the technical scope of the present invention.

[0040] In the embodiment described above, a metal bonding layer is used as the second bonding layer 42. However, a bonding layer made of an inorganic composition may also be used. Examples of inorganic compositions include glass such as quartz glass and soda glass, and inorganic adhesives containing ceramic.

[0041] In the above-described embodiment, the wafer mounting table 10 may have a plurality of holes penetrating the wafer mounting table 10 in the vertical direction. These holes include a plurality of gas holes opening in the wafer mounting surface 22 and lift pin holes for inserting lift pins that move the wafer W up and down relative to the wafer mounting surface 22. The gas holes are provided in suitable positions where the seal band 22 a and the small circular protrusions 22 b are not provided when the wafer mounting surface 22 is viewed from above. A thermally conductive gas, such as He gas, is supplied to the gas holes. When the thermally conductive gas is supplied to the gas holes, the thermally conductive gas fills the space below the wafer W placed on the wafer mounting surface 22. This improves thermal conduction between the wafer W and the wafer mounting table 10. The lift pin holes are provided at equal intervals along concentric circles of the wafer mounting surface 22 when the wafer mounting surface 22 is viewed from above. By moving the lift pins up and down, the wafer W can be lifted from the wafer mounting surface 22 or lowered onto the wafer mounting surface 22.

[0042] In the above-described embodiment, the first bonding layer 41 is connected to the RF power supply 64 and the upper electrode 92 is connected to ground, but the first bonding layer 41 may be connected to ground and the upper electrode 92 may be connected to the RF power supply 64.

[0043] In the above-described embodiment, the electrostatic electrode 23 is built into the first ceramic plate 21, but a heater electrode may be built in instead of or in addition to the electrostatic electrode 23. The heater electrode may be a resistance heating element (coil, ribbon, etc.) wired across the entire surface of the wafer mounting surface 22 in a plan view, or the wafer mounting surface 22 may be divided into a plurality of zones in a plan view and a resistance heating element wired for each zone. When the heater electrode is built into the first ceramic plate 21 together with the electrostatic electrode 23, the electrostatic electrode 23 is built in on the wafer mounting surface 22 side, and the heater electrode is built in below it.

[0044] The present invention can be used, for example, in semiconductor manufacturing equipment components that hold wafers when manufacturing semiconductors.

[0045] 10 wafer mounting table, 20 ceramic plate, 21 first ceramic plate, 21a upper surface, 21b lower surface, 22 wafer mounting surface, 22a seal band, 22b small circular protrusions, 23 electrostatic electrode, 26 second ceramic plate, 26a upper surface, 26b lower surface, 30 cooling plate, 30a upper surface, 30b lower surface, 32 refrigerant flow path, 41 first bonding layer, 42 second bonding layer, 48 RF electrode hole, 49 insulating tube, 50 insulating film, 52 power supply member, 53 LPF, 54 DC power supply, 62 RF rod, 63 HPF, 64 RF power supply, 90 chamber, 92 upper electrode.

Claims

1. A member for a semiconductor manufacturing apparatus, comprising: a first ceramic plate having a wafer placement surface thereon and incorporating electrodes; a second ceramic plate disposed on the lower surface side of the first ceramic plate; a cooling plate disposed on the lower surface side of the second ceramic plate; a first bonding layer made of metal that bonds the lower surface of the first ceramic plate and the upper surface of the second ceramic plate and is used as an RF electrode; and a second bonding layer made of metal or an inorganic composition that bonds the lower surface of the second ceramic plate and the upper surface of the cooling plate.

2. The member for a semiconductor manufacturing apparatus according to claim 1, wherein the thickness of the first bonding layer is 0.1 mm or more and 1 mm or less.

3. The volume resistivity of the first bonding layer at 20°C is 1×10 -4 Ω·cm or less. The member for a semiconductor manufacturing apparatus according to claim 1 or 2.

4. The absolute value of the difference between the linear thermal expansion coefficient of the first ceramic plate at 40 to 400 °C and the linear thermal expansion coefficient of the second ceramic plate at 40 to 400 °C is 1.5×10 -6 / K or less. The member for a semiconductor manufacturing apparatus according to claim 1 or 2.

5. The cooling plate is formed of a metal or a metal-ceramic composite material, and the absolute value of the difference in linear thermal expansion coefficient between 40 and 400 °C from the second ceramic plate is 1.5×10 -6 / K or less. The member for a semiconductor manufacturing apparatus according to claim 4.

6. The member for a semiconductor manufacturing apparatus according to claim 1 or 2, further comprising an RF electrode hole provided so as to penetrate the cooling plate, the second bonding layer, and the second ceramic plate from the lower surface of the cooling plate and reach the first bonding layer, and into which an RF electrode connection member directly connected to the first bonding layer is inserted.

7. The member for a semiconductor manufacturing apparatus according to claim 6, wherein the RF electrode hole has an insulating tube into which the RF electrode connection member is inserted.

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