Ion implantation device and beam current measuring apparatus

Abstract

A beam current measuring apparatus (100) for an ion implantation device comprises: a first electrode (110) that detects ions of an ion beam irradiated onto a first beam irradiation surface; a plurality of second electrodes (120) that are arranged downstream of the first electrode (110) in the direction in which the ion beam advances, that respectively correspond to a plurality of apertures (116) in the first electrode (110), and that detect ions of an ion beam irradiated onto respective second beam irradiation surfaces of the plurality of second electrodes (120); and a magnetic field generator (130) that is configured so as to apply a first magnetic field (B11) which suppresses the inflow of electrons to the first electrode (110) and the outflow of electrons from the first electrode (110), and a second magnetic field (B12) which suppresses the inflow of electrons to the plurality of second electrodes (120) and the outflow of electrons from the plurality of second electrodes (120).

Description

Ion implantation equipment and beam current measuring device

[0001] The present disclosure relates to ion implantation systems and beam current measurement devices.

[0002] In semiconductor device manufacturing processes, a process of implanting ions into semiconductor wafers (also referred to as an ion implantation process) is typically performed for the purpose of changing the conductivity of the semiconductor, changing the crystalline structure of the semiconductor, etc. The beam current distribution of the ion beam may be measured for monitoring and control of the ion beam, and for this purpose, it is known to provide a beam current measuring device, for example, at the end of the beam line (see, for example, Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2021-72251

[0004] Generally, such a beam current measuring device measures the charge per unit time when the ion beam is incident and obtains the beam current of the ion beam based on this. Therefore, if stray electrons flow into the beam current measuring device from the surrounding space or if secondary electrons emitted from the beam current measuring device when the ion beam is incident are lost into the surrounding space, the beam current measurement of the ion beam by the beam current measuring device may become inaccurate.

[0005] An exemplary object of an embodiment of the present disclosure is to provide a technique for measuring the beam current of an ion beam with high accuracy.

[0006] An ion implantation apparatus according to one aspect of the present disclosure includes a beam current measuring device including: a first electrode having a first beam irradiation surface and detecting ions of an ion beam irradiated onto the first beam irradiation surface, the first electrode having a plurality of apertures formed at a predetermined arrangement on the first beam irradiation surface; a plurality of second electrodes arranged downstream of the first electrode in the direction of ion beam propagation and corresponding to each of the plurality of apertures, each of the plurality of second electrodes having a second beam irradiation surface and detecting ions of the ion beam that pass through each of the plurality of apertures and are irradiated onto the second beam irradiation surface of each of the plurality of second electrodes; and a magnetic field generator configured to apply a first magnetic field that suppresses electrons from flowing into the first electrode and electrons from flowing out of the first electrode, and a second magnetic field that suppresses electrons from flowing into each of the plurality of second electrodes and electrons from each of the plurality of second electrodes.

[0007] A beam current measuring instrument according to one aspect of the present disclosure includes: a first electrode having a first beam irradiation surface and detecting ions of an ion beam irradiated onto the first beam irradiation surface, the first electrode having a plurality of apertures formed at a predetermined arrangement on the first beam irradiation surface; a plurality of second electrodes arranged downstream of the first electrode in the direction of travel of the ion beam and corresponding to each of the plurality of apertures, each of the plurality of second electrodes having a second beam irradiation surface and detecting ions of the ion beam that pass through each of the plurality of apertures and are irradiated onto the second beam irradiation surface of each of the plurality of second electrodes; and a magnetic field generator configured to apply a first magnetic field that suppresses the inflow of electrons into the first electrode and the outflow of electrons from the first electrode, and a second magnetic field that suppresses the inflow of electrons into each of the plurality of second electrodes and the outflow of electrons from each of the plurality of second electrodes.

[0008] Any combination of the above components or mutual substitution of the components or expressions of the present disclosure between methods, devices, systems, etc. are also valid aspects of the present disclosure.

[0009] According to a non-limiting exemplary embodiment of the present disclosure, a technique for measuring the beam current of an ion beam with high accuracy can be provided.

[0010] 5A to 5C are side views schematically showing the vertical direction of the first workpiece held by the first holding device. 5D are front views showing an example of the operation of the first holding device and the second holding device. 5E are front views showing an example of the operation of the first holding device and the second holding device. 5F are front views showing an example of the operation of the first holding device and the second holding device. 5G are front views showing an example of the operation of the first holding device and the second holding device. 5H are front views showing an example of the operation of the first holding device and the second holding device. 5I are a flowchart showing the flow of an ion implantation method according to an embodiment. 5I are a flowchart showing the flow of an ion implantation method according to a modified example. 5I are a top view showing a schematic configuration of an ion implantation device according to another embodiment. 5I are a side view showing a schematic configuration of an ion implantation device according to another embodiment. 5I are a front view schematically showing a beam current measuring device according to an embodiment. 19(a) and 19(b) are schematic diagrams showing exemplary magnet arrangements of a magnetic field generator of a beam current measurement device according to an embodiment, and an electron suppression magnetic field generated thereby. 20(a) is a partial cross-sectional view showing a portion of the beam current measurement device shown in FIG. 20 in more detail. 20(b) is a schematic diagram showing another example of a magnetic field generator of a beam current measurement device according to an embodiment. 20(a) and 20(b) are schematic diagrams showing exemplary magnet arrangements of a magnetic field generator.

[0011] Hereinafter, with reference to the drawings, a detailed description will be given of embodiments for carrying out an ion implantation apparatus and an ion implantation method according to the present disclosure. In the description of the drawings, the same elements are designated by the same reference numerals, and duplicated descriptions will be omitted as appropriate. Furthermore, the configurations described below are merely examples, and do not limit the scope of the present invention in any way.

[0012] FIG. 1 is a top view showing a schematic configuration of an ion implantation apparatus 10 according to an embodiment. FIG. 2 is a side view showing a schematic configuration of the ion implantation apparatus 10 according to an embodiment. The ion implantation apparatus 10 is configured to perform ion implantation processing on the surfaces of workpieces W1 and W2. The workpieces W1 and W2 are, for example, substrates, such as semiconductor wafers. For convenience of explanation, the workpieces may be referred to as "substrates" or "wafers" in this specification, but this is not intended to limit the target of the implantation processing to a specific object. The workpieces may also be large substrates (e.g., glass substrates or resin substrates) used in the manufacture of flat panel displays (FPDs).

[0013] The ion implantation apparatus 10 is configured to irradiate the entire surfaces of the workpieces W1, W2 with a spot-like ion beam by scanning the ion beam back and forth in a predetermined scanning direction and reciprocating the workpieces W1, W2 in a direction intersecting the scanning direction. The ion implantation apparatus 10 includes a beam generating device 12, an implantation processing chamber 14, a transport device 16, and a control device 18.

[0014] The beam generator 12 is configured to generate an ion beam and transport the ion beam to the implantation chamber 14. The implantation chamber 14 accommodates workpieces W1 and W2 to be implanted. In the implantation chamber 14, the workpieces W1 and W2 are irradiated with the ion beam provided by the beam generator 12. The transport device 16 is configured to transport the workpieces W1 and W2 before implantation into the implantation chamber 14 and transport the workpieces W1 and W2 after implantation from the implantation chamber 14. The control device 18 is configured to control the overall operation of the various devices that make up the ion implantation apparatus 10. The ion implantation apparatus 10 includes a vacuum pumping system (not shown) for providing a desired vacuum environment for the beam generator 12, the implantation chamber 14, and the transport device 16.

[0015] The beam generator 12 includes, in order from the upstream side of the beamline A, an ion source 20, an extraction unit 22, a mass analysis unit 24, a beam shaping unit 26, a beam scanning unit 28, a beam collimation unit 30, an acceleration / deceleration unit 32, and an energy analysis unit 34. Here, the beamline A is used for convenience of explanation and is synonymous with the ideal beam trajectory in design when the ion beam is not scanned by the beam scanning unit 28. Furthermore, the upstream side of the beamline A refers to the side closer to the ion source 20, and the downstream side of the beamline A refers to the side closer to the implantation processing chamber 14 (or the beam stopper 38).

[0016] The beam generator 12 is configured so that the beamline A bends midway. The traveling direction of the beamline A changes at the mass analyzer 24 and the energy analyzer 34. The beamline A is configured to extend in a horizontal plane perpendicular to the vertical direction. For convenience of explanation, the traveling direction of the ion beam traveling along the beamline A is referred to as the z direction, the vertical direction as the y direction, and the direction perpendicular to the y and z directions as the x direction. In particular, the traveling direction of the beamline A from the ion source 20 to the mass analyzer 24 is referred to as the z1 direction, and the direction perpendicular to the y and z1 directions as the x1 direction. Furthermore, the traveling direction of the beamline A from the mass analyzer 24 to the energy analyzer 34 is referred to as the z2 direction, and the direction perpendicular to the y and z2 directions as the x2 direction. Furthermore, the traveling direction of the beamline A downstream of the energy analyzer 34 is referred to as the z3 direction, and the direction perpendicular to the y and z3 directions as the x3 direction.

[0017] The ion source 20 is configured to generate ions that constitute an ion beam. The ion source 20 includes an arc chamber 20a. The arc chamber 20a has an internal space 20b in which plasma is generated. The arc chamber 20a has a substantially rectangular box shape that defines the internal space 20b. The arc chamber 20a has a front slit 20c for extracting ions from the plasma generated in the internal space 20b. The front slit 20c has a slit shape with a long opening width in the horizontal direction (x1 direction) and a short opening width in the vertical direction (y direction). In other words, the horizontal opening width of the front slit 20c is larger than the vertical opening width of the front slit 20c.

[0018] The ion source 20 includes a source magnet device 20d. The source magnet device 20d is configured to apply a magnetic field B1 in the horizontal direction (x1 direction) to the internal space 20b of the arc chamber 20a. By applying the magnetic field B1, the source magnet device 20d increases the generation efficiency of plasma generated in the internal space 20b of the arc chamber 20a. The direction in which the source magnet device 20d applies the magnetic field B1 corresponds to the longitudinal direction of the front slit 20c.

[0019] The extraction unit 22 is provided downstream of the ion source 20. The extraction unit 22 extracts ions from the ion source 20 to generate an ion beam. The extraction unit 22 is configured to extract ions from plasma generated in the internal space 20b of the arc chamber 20a. The extraction unit 22 includes a first extraction electrode 22a and a second extraction electrode 22b. The first extraction electrode 22a is provided downstream of the arc chamber 20a, and the second extraction electrode 22b is provided downstream of the first extraction electrode 22a. A negative suppression voltage is applied to the first extraction electrode 22a. A ground voltage is applied to the second extraction electrode 22b. A positive extraction voltage is applied to the arc chamber 20a.

[0020] The first extraction electrode 22a has a first extraction opening 22c through which the ion beam passes. Similar to the front slit 20c, the first extraction opening 22c has a slit shape with a long opening width in the horizontal direction (x1 direction) and a short opening width in the vertical direction (y direction). In other words, the horizontal opening width of the first extraction opening 22c is larger than the vertical opening width of the first extraction opening 22c. The second extraction electrode 22b has a second extraction opening 22d through which the ion beam passes. Similar to the front slit 20c, the second extraction opening 22d has a slit shape with a long opening width in the horizontal direction (x1 direction) and a short opening width in the vertical direction (y direction). In other words, the horizontal opening width of the second extraction opening 22d is larger than the vertical opening width of the second extraction opening 22d.

[0021] The ion beam extracted by the extraction unit 22 may be a ribbon-shaped beam that spreads in the horizontal direction (x1 direction). The horizontal size of the ribbon-shaped beam can be increased by increasing the horizontal opening widths of the front slit 20c, the first extraction opening 22c, and the second extraction opening 22d. As a result, it becomes easy to increase the beam current of the ion beam extracted from the ion source 20.

[0022] The mass analysis unit 24 is provided downstream of the extraction unit 22. The mass analysis unit 24 is configured to select, by mass analysis, required ion species from the ion beam extracted by the extraction unit 22. The mass analysis unit 24 includes a mass analysis magnet device 24a, a mass analysis slit 24b, and an injector Faraday cup 24c.

[0023] The mass analysis magnet device 24a applies a magnetic field B2 to the ion beam, deflecting the ion beam along different paths depending on the value of the ion mass-to-charge ratio M=m / q (m is mass, q is charge). The mass analysis magnet device 24a applies a magnetic field B2 in the vertical direction (-y direction) to deflect the ion beam in the horizontal direction (x1 direction). The strength of the magnetic field B2 applied by the mass analysis magnet device 24a is adjusted so that ion species having a desired mass-to-charge ratio M pass through the mass analysis slit 24b. The ion beam passing through the mass analysis slit 24b is deflected, for example, by 90 degrees by the mass analysis magnet device 24a.

[0024] The mass analysis slit 24b is provided downstream of the mass analysis magnet device 24a. The mass analysis slit 24b has a slit shape with a narrow opening width in the horizontal direction (x2 direction) and a wide opening width in the vertical direction (y direction). In other words, the vertical opening width of the mass analysis slit 24b is wider than the horizontal opening width of the mass analysis slit 24b.

[0025] The mass analysis slit 24b may be configured so that the opening width (i.e., slit width) in the horizontal direction (x2 direction) is variable to adjust the mass resolution. The mass analysis slit 24b may be configured so that it is composed of two beam shields that are movable in the slit width direction, and the slit width is adjustable by changing the distance between the two beam shields. The mass analysis slit 24b may be configured so that the slit width is adjustable by switching to one of multiple slits with different slit widths.

[0026] The injector Faraday cup 24c is provided downstream of the mass analysis slit 24b. The injector Faraday cup 24c measures the beam current of the mass-analyzed ion beam that passes through the mass analysis slit 24b. The injector Faraday cup 24c can measure the mass analysis spectrum of the ion beam by measuring the beam current while changing the magnetic field strength of the mass analysis magnet device 24a. The measured mass analysis spectrum can be used to calculate the mass resolution of the mass analysis unit 24.

[0027] The injector Faraday cup 24c is configured to be able to be inserted into and removed from the beamline A by the operation of the injector driver 24d. The injector driver 24d moves the injector Faraday cup 24c in a direction (e.g., the x2 direction) perpendicular to the z2 direction in which the beamline A extends. When the injector Faraday cup 24c is placed in the beamline A as shown by the dashed line in Figure 1, it blocks the ion beam traveling downstream. On the other hand, when the injector Faraday cup 24c is retracted from the beamline A as shown by the solid line in Figure 1, the blockage of the ion beam traveling downstream is released.

[0028] A magnetic shield 23 may be provided between the extraction unit 22 and the mass analysis unit 24. The magnetic shield 23 is configured to suppress magnetic field interference between the magnetic field B1 applied to the ion source 20 and the magnetic field B2 applied to the mass analysis unit 24. The magnetic shield 23 is made of a magnetic material such as an electromagnetic steel plate. The magnetic shield 23 has a passage opening 23a that allows the ion beam traveling from the extraction unit 22 toward the mass analysis unit 24 to pass through. The passage opening 23a may have a slit shape that is long in the horizontal direction (x1 direction) and short in the vertical direction (y direction), similar to the front slit 20c. In other words, the horizontal opening width of the passage opening 23a may be larger than the vertical opening width of the passage opening 23a.

[0029] The beam shaping unit 26 is provided downstream of the mass analysis unit 24. The beam shaping unit 26 is configured to shape the ion beam that has passed through the mass analysis unit 24 into a desired cross-sectional shape and convergence / divergence angle. The beam shaping unit 26 includes a lens device that adjusts at least one of the cross-sectional shape and convergence / divergence angle of the ion beam. The beam shaping unit 26 is configured, for example, to focus a ribbon-shaped ion beam that spreads in the horizontal direction and shape it into a spot-shaped ion beam.

[0030] The beam shaping unit 26 includes a plurality of lens devices, for example, three lens devices 26a, 26b, and 26c. The three lens devices 26a to 26c are configured, for example, as electric field type triple quadrupole lenses (also called triplet Q lenses). By using a combination of multiple lens devices, the beam shaping unit 26 can independently adjust the convergence or divergence of the ion beam in each of the horizontal direction (x2 direction) and the vertical direction (y direction). The beam shaping unit 26 may also include a magnetic field type lens device. The beam shaping unit 26 may also include a lens device that shapes the ion beam using both an electric field and a magnetic field.

[0031] The beam scanning unit 28 is provided downstream of the beam shaping unit 26. The beam scanning unit 28 is configured to generate a scanned beam SB by scanning the ion beam back and forth in a predetermined scan direction. The beam scanning unit 28 can also be considered a beam deflection device that deflects the ion beam shaped by the beam shaping unit 26 in the predetermined scan direction. The beam scanning unit 28 is configured so that the scan direction is a direction different from the horizontal direction, for example, so that the scan direction is the vertical direction (y direction).

[0032] The beam scanning unit 28 includes a pair of scanning electrodes 28a and 28b facing each other in the vertical direction (y direction). The pair of scanning electrodes 28a and 28b are connected to a variable voltage power supply (not shown). By periodically changing the voltage applied between the pair of scanning electrodes 28a and 28b, the electric field generated between the pair of scanning electrodes 28a and 28b is changed, thereby deflecting the ion beam at various angles. As a result, the ion beam is scanned over the entire scanning range in the vertical direction (y direction). In FIG. 2 , the arrow Y illustrates the scanning direction and scanning range of the ion beam, and the dashed lines indicate multiple trajectories of the ion beam within the scanning range. Note that the beam scanning unit 28 may be a magnetic field type instead of an electric field type. The beam scanning unit 28 may also include a magnet device for deflecting the ion beam.

[0033] The beam collimator 30 is provided downstream of the beam scanning unit 28. The beam collimator 30 is configured to make the traveling direction of the ion beam scanned back and forth by the beam scanning unit 28 parallel to the direction of the beam line A. The beam collimator 30 has a plurality of arc-shaped collimating lens electrodes 30a, 30b, each having an ion beam passage slit at the center in the horizontal direction (x2 direction). The collimating lens electrodes 30a, 30b are connected to a high-voltage power supply (not shown), and an electric field generated by applying a voltage acts on the ion beam to collimate the traveling direction of the ion beam. Note that the beam collimator 30 may be of a magnetic field type instead of an electric field type. The beam collimator 30 may also include a magnet device for deflecting the ion beam.

[0034] The acceleration / deceleration unit 32 is provided downstream of the beam collimator 30. The acceleration / deceleration unit 32 is configured to accelerate or decelerate the scan beam collimated by the beam collimator 30. The acceleration / deceleration unit 32 is an electrostatic acceleration / deceleration device, and accelerates or decelerates the ion beam by utilizing a potential difference between a first potential applied to the upstream side of the acceleration / deceleration unit 32 and a second potential applied to the downstream side of the acceleration / deceleration unit 32.

[0035] The energy analyzer 34 is provided downstream of the acceleration / deceleration unit 32. The energy analyzer 34 is configured to analyze the energy of the ion beam and pass ions having a desired energy toward the implantation processing chamber 14. The energy analyzer 34 is an angular energy filter (AEF) that deflects the ion beam horizontally and selects a desired energy by the deflection angle θ. The deflection angle θ is, for example, greater than or equal to 10 degrees and less than or equal to 20 degrees, and is approximately 15 degrees. The energy analyzer 34 includes an AEF electrode pair 34a, 34b and an energy analysis slit 34c.

[0036] The AEF electrode pair 34a, 34b are arranged to face each other in a direction perpendicular to the scan direction. The AEF electrode pair 34a, 34b are arranged to face each other in the horizontal direction (x2 direction or x3 direction). The AEF electrode pair 34a, 34b are connected to a high-voltage power supply (not shown) and deflect the ion beam by applying an electric field to it. The AEF electrode pair 34a, 34b are deflection devices that deflect the scan beam in the horizontal direction. The energy analysis slit 34c is provided downstream of the AEF electrode pair 34a, 34b.

[0037] The energy analysis slit 34c has a slit shape with a long opening width in the vertical direction (y direction) and a short opening width in the horizontal direction (x3 direction). That is, the opening width of the energy analysis slit 34c in the vertical direction is larger than the opening width of the energy analysis slit 34c in the horizontal direction. The energy analysis slit 34c allows ion beams of a desired energy value or energy range to pass toward the workpieces W1 and W2 and blocks ion beams other than those.

[0038] The energy analysis unit 34 may be a magnetic field type instead of an electric field type. The energy analysis unit 34 may include a magnet device for magnetic field deflection. The energy analysis unit 34 may use both an electric field and a magnetic field, and may include an AEF electrode pair for electric field deflection and a magnet device for magnetic field deflection.

[0039] In this way, the beam generator 12 supplies the ion beam to be irradiated onto the workpieces W1 and W2 to the implantation processing chamber 14. The beam generator 12 may also be called a beamline device. The beam generator 12 is configured to generate an ion beam for achieving desired implantation conditions by adjusting the operating parameters of various devices that make up the beam generator 12.

[0040] The implantation processing chamber 14 includes a plasma shower device 36 , a beam stopper 38 , a first holding device 40 , and a second holding device 42 .

[0041] The plasma shower device 36 is located downstream of the energy analysis unit 34. The plasma shower device 36 supplies low-energy electrons to the ion beam and the surfaces (processing surfaces) of the workpieces W1 and W2 according to the beam current of the ion beam, thereby suppressing charge-up due to accumulation of positive charges on the processing surfaces caused by ion implantation. The plasma shower device 36 includes, for example, a shower tube 36a through which the ion beam passes and a plasma generator 36b that supplies electrons into the shower tube 36a. The shower tube 36a has a shape in which the opening width in the vertical direction (y direction) is long and the opening width in the horizontal direction (x3 direction) is short.

[0042] The beam stopper 38 is provided at the most downstream position of the beam line A and is attached to, for example, the side wall of the implantation processing chamber 14. When the workpieces W1 and W2 are not present in the beam line A, the ion beam is incident on the beam stopper 38. The beam stopper 38 is provided with a plurality of tuning cups 38a, 38b, 38c, and 38d. The plurality of tuning cups 38a to 38d are Faraday cups configured to measure the beam current of the ion beam incident on the beam stopper 38. The plurality of tuning cups 38a to 38d are arranged at intervals in, for example, the vertical direction (y direction).

[0043] The first holding device 40 is configured to be able to hold a first workpiece W1 to be subjected to implantation processing. The first holding device 40 is configured to reciprocate the first workpiece W1 held by the first holding device 40 in a direction crossing the scan beam. The first holding device 40 is configured to reciprocate the first workpiece W1 in the horizontal direction (x3 direction). The first holding device 40 is movable along a guide rail 44 extending in the horizontal direction (x3 direction).

[0044] The first holding device 40 includes a first chuck mechanism 50 , a first twist mechanism 52 , a first vertical angle adjustment mechanism 54 , a first horizontal angle adjustment mechanism 56 , and a first reciprocating mechanism 58 .

[0045] The first chuck mechanism 50 is configured to contact the back surface of the first workpiece W1 and hold the first workpiece W1. The first chuck mechanism 50 includes, for example, an electrostatic chuck for holding the first workpiece W1. The first chuck mechanism 50 may also include a temperature adjustment mechanism for cooling or heating the first workpiece W1. The first chuck mechanism 50 also includes a first lift mechanism for lifting the first workpiece W1 so as to separate the first workpiece W1 from the first chuck mechanism 50.

[0046] The first twist mechanism 52 rotatably supports the first chuck mechanism 50. The first twist mechanism 52 rotates the first chuck mechanism 50 around a rotation axis (also referred to as the twist axis) extending in the normal direction to the processing surface of the first workpiece W1 held by the first chuck mechanism 50, thereby adjusting the twist angle φa1 of the first workpiece W1. The first twist mechanism 52 adjusts the twist angle φa1 between an alignment mark provided on the outer periphery of the first workpiece W1 and a reference position, for example. Here, the alignment mark on the first workpiece W1 refers to, for example, a notch or orientation flat provided on the outer periphery of the wafer, and is a mark that serves as a reference for the crystal axis direction and angular position of the wafer in the circumferential direction.

[0047] The first vertical angle adjustment mechanism 54 rotatably supports the first twist mechanism 52. The first vertical angle adjustment mechanism 54 rotates the first twist mechanism 52 around a horizontally extending rotation axis (also referred to as a transport tilt axis) to adjust the vertical orientation of the first workpiece W1. The vertical orientation of the first workpiece W1 can be defined by the vertical rotation angle φb1 around the horizontal rotation axis.

[0048] The first horizontal angle adjustment mechanism 56 rotatably supports the first vertical angle adjustment mechanism 54. The first horizontal angle adjustment mechanism 56 rotates the first vertical angle adjustment mechanism 54 around a rotation axis (also referred to as an injection tilt axis) extending in the vertical direction to adjust the horizontal orientation of the first workpiece W1. The horizontal orientation of the first workpiece W1 can be defined by the horizontal rotation angle φc1 around the vertical rotation axis.

[0049] The first reciprocating motion mechanism 58 is configured to move the first horizontal angle adjustment mechanism 56 in the horizontal direction (x3 direction). The first reciprocating motion mechanism 58 moves the first horizontal angle adjustment mechanism 56 along the guide rail 44. The first reciprocating motion mechanism 58 includes, for example, a first ball screw 58a that extends in the horizontal direction (x3 direction) along the guide rail 44. The first reciprocating motion mechanism 58 rotates the first ball screw 58a to linearly move the first horizontal angle adjustment mechanism 56 in the horizontal direction.

[0050] The second holding device 42 is configured to be able to hold a second workpiece W2 to be subjected to implantation processing. The second holding device 42 is configured to reciprocate the second workpiece W2 held by the second holding device 42 in a direction crossing the scan beam. The second holding device 42 is configured to reciprocate the second workpiece W2 in the horizontal direction (x3 direction). The second holding device 42 is movable along a guide rail 44 extending in the horizontal direction (x3 direction).

[0051] The second holding device 42 can be configured similarly to the first holding device 40. The second holding device 42 is movable in the same direction as the first holding device 40. The second holding device 42 is movable along a guide rail 44 shared with the first holding device 40. Note that the second holding device 42 may be configured to be movable along a guide rail different from that of the first holding device 40. In other words, the implantation processing chamber 14 may be provided with a first guide rail along which the first holding device 40 moves and a second guide rail along which the second holding device 42 moves. The second holding device 42 is movable simultaneously with the first holding device 40. The second holding device 42 is movable independently of the first holding device 40.

[0052] The second holding device 42 includes a second chuck mechanism 60 , a second twist mechanism 62 , a second vertical angle adjustment mechanism 64 , a second horizontal angle adjustment mechanism 66 , and a second reciprocating mechanism 68 .

[0053] The second chuck mechanism 60 is configured to contact the back surface of the second workpiece W2 and hold the second workpiece W2. The second chuck mechanism 60 includes, for example, an electrostatic chuck for holding the second workpiece W2. The second chuck mechanism 60 may also include a temperature adjustment mechanism for cooling or heating the second workpiece W2. The second chuck mechanism 60 also includes a second lift mechanism for lifting the second workpiece W2 so as to separate it from the second chuck mechanism 60.

[0054] The second twist mechanism 62 rotatably supports the second chuck mechanism 60. The second twist mechanism 62 rotates the second chuck mechanism 60 around a rotation axis (also referred to as a twist axis) extending in the normal direction to the processing surface of the second workpiece W2 held by the second chuck mechanism 60, thereby adjusting the twist angle φa2 of the second workpiece W2. The second twist mechanism 62 adjusts, for example, the twist angle φa2 between an alignment mark provided on the outer periphery of the second workpiece W2 and a reference position.

[0055] The second vertical angle adjustment mechanism 64 rotatably supports the second twist mechanism 62. The second vertical angle adjustment mechanism 64 rotates the second twist mechanism 62 around a horizontally extending rotation axis (also referred to as a transport tilt axis) to adjust the vertical orientation of the second workpiece W2. The vertical orientation of the second workpiece W2 can be defined by the vertical rotation angle φb2 around the horizontal rotation axis.

[0056] The second horizontal angle adjustment mechanism 66 rotatably supports the second vertical angle adjustment mechanism 64. The second horizontal angle adjustment mechanism 66 rotates the second vertical angle adjustment mechanism 64 around a rotation axis (also referred to as an injection tilt axis) extending in the vertical direction to adjust the horizontal orientation of the second workpiece W2. The horizontal orientation of the second workpiece W2 can be defined by the horizontal rotation angle φc2 around the vertical rotation axis.

[0057] The second reciprocating motion mechanism 68 is configured to move the second horizontal angle adjustment mechanism 66 in the horizontal direction (x3 direction). The second reciprocating motion mechanism 68 moves the second horizontal angle adjustment mechanism 66 along the guide rail 44. The second reciprocating motion mechanism 68 includes, for example, a second ball screw 68a extending in the horizontal direction (x3 direction) along the guide rail 44, and by rotating the second ball screw 68a, the second horizontal angle adjustment mechanism 66 is linearly moved in the horizontal direction.

[0058] The transport device 16 includes a first transport device 70 and a second transport device 72. The first transport device 70 and the second transport device 72 are arranged apart from the beamline A in the horizontal direction (x3 direction). In the example of FIG. 1 , the first transport device 70 is arranged apart from the beamline A in the −x3 direction, and the second transport device 72 is arranged apart from the beamline A in the +x3 direction. The first transport device 70 and the second transport device 72 are arranged such that the beam stopper 38 is located between the first transport device 70 and the second transport device 72, for example.

[0059] The first transfer device 70 is configured to load the first workpiece W1 before the implantation process into the implantation process chamber 14 and load the first workpiece W1 after the implantation process out of the implantation process chamber 14. The first transfer device 70 loads the first workpiece W1 into the first holding device 40 and loads the first workpiece W1 out of the first holding device 40. The first transfer device 70 includes, for example, a first transfer robot (not shown) for transporting the first workpiece W1. The first transfer device 70 transports the first workpiece W1 through a first transfer port 74 provided in the sidewall of the implantation process chamber 14.

[0060] The second transfer device 72 is configured to load the second workpiece W2 before the implantation process into the implantation process chamber 14 and load the second workpiece W2 after the implantation process out of the implantation process chamber 14. The second transfer device 72 loads the second workpiece W2 into the second holding device 42 and loads the second workpiece W2 out of the second holding device 42. The second transfer device 72 includes, for example, a second transfer robot (not shown) for transporting the second workpiece W2. The second transfer device 72 transports the second workpiece W2 through a second transfer port 76 provided in the sidewall of the implantation process chamber 14.

[0061] The control device 18 controls the overall operation of the ion implantation device 10. The control device 18 is realized in terms of hardware by elements and mechanical devices such as a computer CPU and memory, and in terms of software by a computer program, etc. Various functions provided by the control device 18 can be realized by cooperation between hardware and software.

[0062] The control device 18 includes a processor 18a such as a central processing unit (CPU) and a memory 18b such as a read-only memory (ROM) or a random access memory (RAM). The control device 18 controls the overall operation of the ion implantation device 10 in accordance with a program stored in the memory 18b, for example, by the processor 18a executing the program. The processor 18a may execute a program stored in an arbitrary storage device other than the memory 18b, may execute a program obtained from an arbitrary recording medium by a reading device, or may execute a program obtained via a network. The memory 18b in which the program is stored may be a volatile memory such as a dynamic random access memory (DRAM), or may be a non-volatile memory such as an electrically erasable programmable read-only memory (EEPROM), a flash memory, a magnetoresistive memory, a resistance change memory, or a ferroelectric memory. Non-volatile memory, magnetic recording media such as magnetic tapes and magnetic disks, and optical recording media such as optical disks are examples of non-transitory, tangible computer-readable storage media.

[0063] The various functions provided by the control device 18 may be realized by a single device having a processor 18a and a memory 18b, or may be realized by cooperation of multiple devices each having a processor 18a and a memory 18b.

[0064] 3 is a front view showing a schematic configuration of the first holding device 40 and the second holding device 42, as viewed in the beam traveling direction (z3 direction) in the implantation processing chamber 14. In FIG. 3, the first holding device 40 is disposed at a first transfer position 80, and the second holding device 42 is disposed at a second transfer position 82. The first transfer position 80 is a position for loading or unloading the first workpiece W1 into or from the first holding device 40 through the first transfer port 74. The first transfer position 80 corresponds to the position of the first transfer port 74. The second transfer position 82 is a position for loading or unloading the second workpiece W2 into or from the second holding device 42 through the second transfer port 76. The second transfer position 82 corresponds to the position of the second transfer port 76. The first transfer position 80 and the second transfer position 82 are separated in the horizontal direction (x3 direction) from an implantation position 84 for irradiating the workpieces W1 and W2 with an ion beam.

[0065] The implantation position 84 is located at the center of the implantation processing chamber 14 in the horizontal direction (x3 direction). The implantation position 84 is located between the first transfer position 80 and the second transfer position 82. The implantation position 84 includes an implantation center position 84C, an implantation left end position 84L, and an implantation right end position 84R. In FIG. 3 , the workpieces WC, WL, and WR located at the implantation center position 84C, the implantation left end position 84L, and the implantation right end position 84R are indicated by two-dot chain lines. The implantation center position 84C corresponds to the position irradiated with the scan beam SB generated by the beam generator 12. The implantation left end position 84L is shifted to the left (+x3 direction in FIG. 3 ) from the implantation center position 84C and is set so that the entire surface to be processed of the workpiece WL located at the implantation left end position 84L does not overlap with the scan beam SB. The right end position 84R of the implantation is shifted to the right (-x3 direction in Figure 3) from the central implantation position 84C, and is set so that the entire surface of the workpiece WR placed at the right end position 84R does not overlap with the scan beam SB.

[0066] The size h of the irradiation range of the scan beam SB in the vertical direction (y direction) Ｂ is the size h of the processed surface of the processed objects W1 and W2 in the vertical direction (y direction) Ｗ The vertical size of the scan beam SB is larger than h Ｂis, for example, the vertical size h of the processed surfaces of the processed objects W1 and W2. Ｗ The thickness is 1.1 times or more and 3 times or less, and preferably 1.2 times or more and 2 times or less.

[0067] The first holding device 40 reciprocates in the horizontal direction (x3 direction) at the injection position 84, thereby irradiating the entire processing surface of the first workpiece W1 with the scan beam SB. The first holding device 40 reciprocates within a movement range C from the injection left end position 84L to the injection right end position 84R, thereby irradiating the entire processing surface of the first workpiece W1 with the scan beam SB. The first holding device 40 moves to the first transfer position 80, thereby enabling the first workpiece W1 to be loaded or unloaded. The first holding device 40 is movable between the injection position 84 and the first transfer position 80. The first holding device 40 is movable over a first movable range E1 from the first transfer position 80 to the injection left end position 84L. The first holding device 40 cannot move to the second transfer position 82.

[0068] The second holding device 42 reciprocates in the horizontal direction (x3 direction) at the injection position 84, thereby irradiating the entire processing surface of the second workpiece W2 with the scan beam SB. The second holding device 42 reciprocates within a movement range C from the injection left end position 84L to the injection right end position 84R, thereby irradiating the entire processing surface of the second workpiece W2 with the scan beam SB. The second holding device 42 moves to the second transfer position 82, thereby enabling the second workpiece W2 to be loaded or unloaded. The second holding device 42 is movable between the injection position 84 and the second transfer position 82. The second holding device 42 is movable over a second movable range E2 from the second transfer position 82 to the injection right end position 84R. The second holding device 42 cannot move to the first transfer position 80.

[0069] The first implantation position for irradiating the first workpiece W1 held by the first holding device 40 with an ion beam is common to the second implantation position for irradiating the second workpiece W2 held by the second holding device 42 with an ion beam. That is, the first implantation position and the second implantation position coincide with the common implantation position 84. Furthermore, the first movement range in which the first holding device 40 reciprocates the first workpiece W1 at the first implantation position is common to the second movement range in which the second holding device 42 reciprocates the second workpiece W2 at the second implantation position. That is, the first movement range and the second movement range coincide with the common movement range C. The first movement range and the second movement range overlap when viewed in the beam traveling direction. The vertical position of the first workpiece W1 held by the first holding device 40 at the first implantation position is common to the vertical position of the second workpiece W2 held by the second holding device 42 at the second implantation position. The position in the beam traveling direction of the first workpiece W1 held by the first holding device 40 at the first implantation position is the same as the position in the beam traveling direction of the second workpiece W2 held by the second holding device 42 at the second implantation position. Therefore, the first holding device 40 and the second holding device 42 are configured to allow the first workpiece W1 and the second workpiece W2 to move back and forth in the same manner relative to the scan beam SB. Therefore, the first workpiece W1 and the second workpiece W2 are irradiated with the scan beam SB in a common implantation environment.

[0070] 4(a) and 4(b) are top views schematically showing the horizontal orientation of the first workpiece W1 held by the first holding device 40. 4(a) and 4(b) show changes in the horizontal orientation of the first workpiece W1 caused by the first horizontal angle adjustment mechanism 56. The same applies to the horizontal orientation of the second workpiece W2 held by the second holding device 42.

[0071] 4(a) and 4(b) show the orientation of the first workpiece W1 during the implantation process in which the first workpiece W1 is irradiated with the scan beam SB. FIG. 4(a) shows a case in which the surface of the first workpiece W1 is perpendicular to the direction of travel of the scan beam SB (z3 direction). FIG. 4(b) shows a case in which the surface of the first workpiece W1 is obliquely intersecting the direction of travel of the scan beam SB (z3 direction). In FIG. 4(b), the surface of the first workpiece W1 has a horizontal tilt angle α1 with respect to the direction of travel of the scan beam SB (z3 direction). The horizontal tilt angle α1 indicates the horizontal inclination of the incident direction of the scan beam SB relative to the normal to the surface of the first workpiece W1. The first holding device 40 can adjust the horizontal tilt angle α1 of the first workpiece W1 by driving the first horizontal angle adjustment mechanism 56 to adjust the horizontal rotation angle φc1. The first holding device 40 is configured to be able to adjust the horizontal tilt angle α1 within a range of ±30 degrees or ±60 degrees during ion implantation, for example.

[0072] 5(a) to 5(c) are side views schematically showing the vertical orientation of the first workpiece W1 held by the first holding device 40. 5(a) to 5(c) show changes in the vertical orientation of the first workpiece W1 caused by the first vertical angle adjustment mechanism 54. The same applies to the vertical orientation of the second workpiece W2 held by the second holding device 42.

[0073] 5A shows an example of the orientation of the first workpiece W1 during the implantation process in which the scan beam SB is irradiated onto the first workpiece W1. In FIG. 5A, the first holding device 40 holds the first workpiece W1 so that the surface to be processed of the first workpiece W1 is oriented perpendicular to the direction of travel of the scan beam SB (the z3 direction). In other words, the first holding device 40 holds the first workpiece W1 so that the surface to be processed of the first workpiece W1 is oriented not along the horizontal direction. In the example of FIG. 5A, the first holding device 40 holds the first workpiece W1 so that the surface to be processed of the first workpiece W1 is oriented along the vertical direction.

[0074] FIG. 5(b) shows another example of the orientation of the first workpiece W1 during the implantation process in which the scan beam SB is irradiated onto the first workpiece W1. In FIG. 5(b), the first holding device 40 holds the first workpiece W1 so that the surface to be processed of the first workpiece W1 is tilted relative to the vertical direction. In FIG. 5(b), the first holding device 40 holds the first workpiece W1 so that the surface to be processed of the first workpiece W1 is not aligned with the horizontal direction. In FIG. 5(b), the surface to be processed of the first workpiece W1 has a vertical tilt angle β1 with respect to the traveling direction of the scan beam SB (direction z3). The vertical tilt angle β1 indicates the vertical inclination of the incident direction of the scan beam SB with respect to the normal to the surface to be processed of the first workpiece W1. First holding device 40 can adjust vertical tilt angle β1 by adjusting vertical rotation angle φb1 by driving first vertical angle adjustment mechanism 54. First holding device 40 is configured to be able to adjust vertical tilt angle β1 within a range of ±30 degrees or ±60 degrees, for example, during ion implantation.

[0075] FIG. 5(c) shows the orientation of the first workpiece W1 during the transfer process of loading or unloading the first workpiece W1 into or from the first holding device 40. In FIG. 5(c), the first holding device 40 holds the first workpiece W1 with the processing surface of the first workpiece W1 oriented horizontally. In FIG. 5(c), the first holding device 40 lifts the first workpiece W1 using the first lift mechanism 50a so that the first workpiece W1 moves away from the first chuck mechanism 50. This allows the arm of the first transport robot for loading or unloading the first workpiece W1 to be inserted into the gap 50b between the first chuck mechanism 50 and the first workpiece W1. Note that it is not essential that the arm of the first transport robot be inserted into the gap 50b between the first chuck mechanism 50 and the first workpiece W1. The arm of the first transport robot may be configured to support the outer periphery of the first workpiece W1 instead of the back surface of the first workpiece W1. In this case, the gap 50b may be very small.

[0076] 6 to 9 are front views showing an example of the operation of the first holding device 40 and the second holding device 42. FIG. 6 shows a situation in which the first injection process is being performed on the first workpiece W1. In FIG. 6, the first holding device 40 is disposed at the injection position 84, and the second holding device 42 is disposed at the second transfer position 82. The first holding device 40 reciprocates horizontally at the injection position 84 as indicated by the arrow X to perform the injection process on the first workpiece W1. The second holding device 42 lifts up the second workpiece W2 using the second lift mechanism 60a at the second transfer position 82 in order to transport the second workpiece W2 after the injection process through the second transfer port 76. The second holding device 42 receives the second workpiece W2 using the second lift mechanism 60a at the second transfer position 82 in order to transport the second workpiece W2 before the injection process through the second transfer port 76.

[0077] 6, the first holding device 40 holds the first workpiece W1 so that the scan beam SB is irradiated onto the processing surface of the first workpiece W1. The first holding device 40 holds the first workpiece W1 in an orientation where the horizontal tilt angle α1 is zero, as shown in FIG. 4(a), for example. The first holding device 40 holds the first workpiece W1 in an orientation where the vertical tilt angle β1 is zero, as shown in FIG. 5(a), for example. The first holding device 40 may hold the first workpiece W1 in an orientation where the horizontal tilt angle α1 is not zero, as shown in FIG. 4(b). The first holding device 40 may hold the first workpiece W1 in an orientation where the vertical tilt angle β1 is not zero, as shown in FIG. 5(b). The first holding device 40 may hold the first workpiece W1 in an orientation where both the horizontal tilt angle α1 and the vertical tilt angle β1 are not zero.

[0078] 6, the second holding device 42 holds the second workpiece W2 so that it is oriented so that the second workpiece W2 can be loaded or unloaded through the second transfer opening 76. Similar to FIG. 5(c), the second holding device 42 holds the second workpiece W2 with the processing surface of the second workpiece W2 oriented horizontally. The second holding device 42 lifts up the second workpiece W2 using the second lift mechanism 60a, forming a gap 60b between the second chuck mechanism 60 and the second workpiece W2. The second transfer device 72 inserts the arm of the second transfer robot into the gap 60b between the second chuck mechanism 60 and the second workpiece W2, thereby unloading the second workpiece W2 after the injection process. When the second workpiece W2 before injection processing is placed on the second lift mechanism 60a by the arm of the second transport robot, the second holding device 42 releases the lift-up of the second workpiece W2 and holds the second workpiece W2 in the second chuck mechanism 60. After holding the second workpiece W2 before injection processing, the second holding device 42 drives the second vertical angle adjustment mechanism 64 to change the vertical rotation angle φb2 and holds the second workpiece W2 with the processing surface of the second workpiece W2 oriented not along the horizontal direction.

[0079] 7 illustrates a situation in which the first injection process for the first workpiece W1 is switched to the second injection process for the second workpiece W2. That is, the first injection process for the first workpiece W1 is completed and the second injection process for the second workpiece W2 is initiated. In FIG. 7, the first holding device 40 moves from the injection position 84 toward the first transfer position 80 as indicated by arrow F1, and the second holding device 42 moves from the second transfer position 82 toward the injection position 84 as indicated by arrow F2. As shown in FIG. 7, by simultaneously moving the first holding device 40 and the second holding device 42 in the same direction, the time required to switch from the first injection process to the second injection process can be shortened.

[0080] In FIG. 7 , the first holding device 40 and the second holding device 42 can be moved so as to maintain the relative distance d between the first workpiece W1 held by the first holding device 40 and the second workpiece W2 held by the second holding device 42. For example, the relative distance d can be maintained constant by making the movement speeds of the first holding device 40 and the second holding device 42 the same. The first holding device 40 and the second holding device 42 may be moved so as to maintain the relative distance d within a range from a predetermined upper limit to a predetermined lower limit by adjusting the movement speeds of the first holding device 40 and the second holding device 42. In this case, the movement speed of the first holding device 40 may be faster or slower than the movement speed of the second holding device 42. For ion implantation that achieves a uniform dose distribution in the horizontal direction of the workpiece, it is preferable that the relative distance d be as small as possible. For ion implantation that achieves a non-uniform dose distribution in the horizontal direction of the workpiece, it is preferable that the relative distance d be larger than the size of the scan beam SB in the horizontal direction (x3 direction).

[0081] In FIG. 7 , the moving speed of the first holding device 40 holding the first workpiece W1 at the end of the injection process may be the maximum speed that the first holding device 40 can achieve. By moving the first holding device 40 at the maximum speed, the time required from the completion of the first injection process into the first workpiece W1 to the removal of the first workpiece W1 can be shortened, thereby improving productivity. On the other hand, the moving speed of the second holding device 42 holding the second workpiece W2 at the start of the injection process may be determined according to the injection conditions of the second workpiece W2. By moving the second holding device 42 at a moving speed according to the injection conditions, the second injection process into the second workpiece W2 can be started at the same moving speed after the second workpiece W2 has moved to the injection position 84. This allows the start of the second injection process to be accelerated, improving productivity.

[0082] 8 shows a situation in which the second injection process is being performed on the second workpiece W2. In FIG. 8, the second holding device 42 is disposed at an injection position 84, and the first holding device 40 is disposed at a first transfer position 80. The second holding device 42 reciprocates horizontally at the injection position 84 as indicated by the arrow X for the injection process on the second workpiece W2. The first holding device 40 lifts up the first workpiece W1 at the first transfer position 80 using the first lift mechanism 50a to transport the first workpiece W1 after the injection process through the first transfer opening 74. The first holding device 40 receives the first workpiece W1 at the first transfer position 80 using the first lift mechanism 50a to transport the first workpiece W1 before the injection process through the first transfer opening 74.

[0083] In FIG. 8 , the second holding device 42 holds the second workpiece W2 so that the processing surface of the second workpiece W2 is oriented so that the scan beam SB is irradiated onto it. The second holding device 42 holds the second workpiece W2 in an orientation where the horizontal tilt angle α2 is zero, as in FIG. 4( a), for example. The second holding device 42 holds the second workpiece W2 in an orientation where the vertical tilt angle β2 is zero, as in FIG. 5( a). The second holding device 42 may hold the second workpiece W2 in an orientation where the horizontal tilt angle α2 is not zero, as in FIG. 4( b). The second holding device 42 may hold the second workpiece W2 in an orientation where the vertical tilt angle β2 is not zero, as in FIG. 5( b). The second holding device 42 may hold the second workpiece W2 in an orientation where both the horizontal tilt angle α2 and the vertical tilt angle β2 are not zero.

[0084] 8, the first holding device 40 holds the first workpiece W1 so that it is oriented so that it can be loaded or unloaded through the first transfer opening 74. As shown in FIG. 5(c), the first holding device 40 holds the first workpiece W1 so that the processing surface of the first workpiece W1 is oriented horizontally. The first holding device 40 lifts up the first workpiece W1 using the first lift mechanism 50a, forming a gap 50b between the first chuck mechanism 50 and the first workpiece W1. The first transfer device 70 inserts the arm of the first transfer robot into the gap 50b between the first chuck mechanism 50 and the first workpiece W1, thereby unloading the first workpiece W1 after the injection process. When the first workpiece W1 before injection processing is placed on the first lift mechanism 50a by the arm of the first transport robot, the first holding device 40 releases the lift-up of the first workpiece W1 and holds the first workpiece W1 in the first chuck mechanism 50. After holding the first workpiece W1 before injection processing, the first holding device 40 drives the first vertical angle adjustment mechanism 54 to change the vertical rotation angle φb1 and holds the first workpiece W1 with the processing surface of the first workpiece W1 oriented not along the horizontal direction.

[0085] 9 illustrates a situation in which the second injection process for the second workpiece W2 is switched to the first injection process for the first workpiece W1. That is, the second injection process for the second workpiece W2 is completed and the first injection process for the first workpiece W1 is initiated. In FIG. 9, the first holding device 40 moves from the first transfer position 80 toward the injection position 84 as indicated by arrow F3, and the second holding device 42 moves from the injection position 84 toward the second transfer position 82 as indicated by arrow F4. As shown in FIG. 9, by simultaneously moving the first holding device 40 and the second holding device 42 in the same direction, the time required to switch from the second injection process to the first injection process can be shortened.

[0086] 9 , the first holding device 40 and the second holding device 42 can be moved so as to maintain the relative distance d between the first workpiece W1 held by the first holding device 40 and the second workpiece W2 held by the second holding device 42. For example, the relative distance d can be maintained constant by making the movement speeds of the first holding device 40 and the second holding device 42 the same. The movement speeds of the first holding device 40 and the second holding device 42 may be adjusted to move the first holding device 40 and the second holding device 42 so that the relative distance d is maintained within a range from a predetermined upper limit to a predetermined lower limit. In this case, the movement speed of the first holding device 40 may be faster or slower than the movement speed of the second holding device 42. The relative distance d is preferably greater than the size of the scan beam SB in the horizontal direction (x3 direction).

[0087] In FIG. 9 , the moving speed of the second holding device 42 holding the second workpiece W2 at the end of the injection process may be the maximum speed that the second holding device 42 can achieve. By moving the second holding device 42 at the maximum speed, the time required from the completion of the second injection process into the second workpiece W2 to the removal of the second workpiece W2 can be shortened, thereby improving productivity. On the other hand, the moving speed of the first holding device 40 holding the first workpiece W1 at the start of the injection process may be determined according to the injection conditions of the first workpiece W1. By moving the first holding device 40 at a moving speed according to the injection conditions, the first injection process into the first workpiece W1 can be started at the same moving speed after the first workpiece W1 has moved to the injection position 84. This allows the start of the first injection process to be accelerated, improving productivity.

[0088] 10 is a flowchart showing the flow of the ion implantation method according to the embodiment. First, a first workpiece W1 before implantation is loaded into the first holding device 40 (S10). In S10, the first workpiece W1 after implantation held in the first holding device 40 may be unloaded, and then the first workpiece W1 before implantation may be loaded into the first holding device 40. Next, the second holding device 42 is moved to the second transfer position 82 (S12), and the first holding device 40 is moved to the first implantation position (e.g., implantation position 84) (S14). S12 and S14 can be performed simultaneously, or the execution periods of S12 and S14 can be performed so that they at least partially overlap. Next, the first holding device 40 is reciprocated at the first implantation position, and the reciprocating first workpiece W1 is irradiated with an ion beam (S16).

[0089] Before, during, or after S16, the second workpiece W2 before the implantation process is loaded into the second holding device 42 (S18). In S18, the implanted second workpiece W2 held in the second holding device 42 may be unloaded, and then the second workpiece W2 before the implantation process may be loaded into the second holding device 42. Next, the first holding device 40 is moved to the first transfer position 80 (S20), and the second holding device 42 is moved to a second implantation position (e.g., implantation position 84) (S22). S20 and S22 can be performed simultaneously, or the respective execution periods of S20 and S22 can be performed so as to at least partially overlap. Next, the second holding device 42 is reciprocated at the second implantation position, and the reciprocating second workpiece W2 is irradiated with an ion beam (S24).

[0090] The flow shown in FIG. 10 can be repeatedly executed. For example, the process of S10 after the repetition can be executed before, during, or after the execution of S24. Before, during, or after the execution of S24, the first workpiece W1 held in the first holding device 40 that has been subjected to the injection process can be removed, and the first workpiece W1 before the injection process can be carried into the first holding device 40. By repeating the flow shown in FIG. 10, the first injection process for the first workpiece W1 held in the first holding device 40 and the second injection process for the second workpiece W2 held in the second holding device 42 can be alternately and repeatedly executed. The flow shown in FIG. 10 can be repeatedly executed until the injection processes for the multiple workpieces to be continuously processed are completed.

[0091] According to this embodiment, by providing multiple holding devices in the injection treatment chamber 14, the injection process and the transport process of the workpieces can be performed in parallel. For example, the transport process of the second workpiece W2 can be performed by the second holding device 42 simultaneously with the first injection process of the first workpiece W1 held by the first holding device 40. Furthermore, the transport process of the first workpiece W1 can be performed by the first holding device 40 simultaneously with the second injection process of the second workpiece W2 held by the second holding device 42. As a result, the time required for continuous treatment of multiple workpieces can be shortened and productivity can be improved compared to when the injection process and the transport process are performed alternately using a single holding device.

[0092] According to this embodiment, by configuring multiple holding devices to reciprocate horizontally, the configuration of the implantation processing chamber 14 and the transfer device 16 can be made less complex than in a configuration in which multiple holding devices reciprocate vertically. Furthermore, by configuring multiple holding devices to reciprocate horizontally, the vertical dimensions of the implantation processing chamber 14 and the transfer device 16 can be reduced. As a result, it is possible to provide an ion implantation apparatus 10 having an outer size that falls within the height limit of a floor in a typical semiconductor process factory.

[0093] According to this embodiment, by configuring the multiple holding devices to move along the common guide rail 44, the reciprocating movements of the multiple holding devices at the injection position can be standardized. As a result, it is possible to prevent differences in the injection environment caused by using multiple holding devices. As a result, it is possible to improve the productivity of the injection process for multiple workpieces while suppressing variations in the injection process for multiple workpieces.

[0094] According to this embodiment, by scanning the ion beam back and forth in the vertical direction and moving the workpiece back and forth in the horizontal direction, the entire surface of the workpiece can be efficiently irradiated with the scan beam. Furthermore, by deflecting the ion beam horizontally in the mass analysis unit 24 and the energy analysis unit 34, a beamline A can be formed that travels along a horizontal plane, and the vertical size of the beam generator 12 can be reduced.

[0095] According to this embodiment, by forming the front slit 20c of the ion source 20 in a slit shape that is long in the horizontal direction, an ion beam that spreads in the horizontal direction can be generated through the extraction section 22. As a result, it is easier to generate an ion beam with a larger beam current than when a spot-shaped ion beam is extracted from the ion source 20. Furthermore, because the vertical size of the ion beam extracted from the ion source 20 is small, the distance between the opposing magnetic poles of the mass analysis magnet device 24a through which the ion beam passes can be made smaller. As a result, the size of the mass analysis magnet device 24a can be reduced. For example, compared to a comparative example in which the front slit of the ion source is narrowed in the horizontal direction and has a slit shape that is long in the vertical direction, an ion beam with a larger beam current can be generated while reducing the size of the mass analysis magnet device 24a.

[0096] According to this embodiment, by shaping the ion beam expanding in the horizontal direction into a spot shape by the beam shaping unit 26, it is possible to form a spot beam suitable for beam scanning in the vertical direction by the beam scanning unit 28. By scanning the spot beam in the vertical direction by the beam scanning unit 28, it becomes possible to implant ions into a workpiece having a large vertical size. According to this embodiment, a scanned beam with a larger beam current can be irradiated onto a workpiece having a large vertical size, thereby improving the productivity of the implantation process.

[0097] In this embodiment, the direction of application of the magnetic field B1 in the ion source 20 and the direction of application of the magnetic field B2 in the mass analyzer 24 are perpendicular to each other, which increases the possibility that interference between the two will adversely affect beam quality and magnetic field control. On the other hand, in the comparative example in which the direction of application of the magnetic field in the ion source is vertical, the direction of application of the magnetic field in the ion source and the direction of application of the magnetic field in the mass analyzer are parallel, so even if the two magnetic fields interfere with each other to a certain extent, this does not pose a major problem. According to this embodiment, by providing a magnetic shield 23 between the extraction unit 22 and the mass analyzer 24, magnetic field interference between the horizontal magnetic field B1 applied to the ion source 20 and the vertical magnetic field B2 applied to the mass analyzer 24 can be suppressed. This makes it possible to achieve both high plasma generation efficiency in the ion source 20 and high mass analysis accuracy in the mass analyzer 24.

[0098] This embodiment can be applied to ion implantation processing of a workpiece having a large vertical size. An example of a workpiece having a large vertical size is a large substrate used in the manufacture of flat panel displays (FPDs). The vertical and horizontal dimensions of such a large substrate are, for example, 1 m x 2 m or more. It is not practical to move such a large workpiece back and forth in the vertical direction. According to this embodiment, the workpiece is moved back and forth in the horizontal direction, which makes it easier to move the large substrate back and forth compared to moving the workpiece back and forth in the vertical direction. Ion implantation processing of the large substrate can be performed by irradiating the large substrate, which is moved back and forth in the horizontal direction, with a scan beam that is scanned in the vertical direction.

[0099] When the workpiece is a large substrate for an FPD, the ion implantation apparatus 10 does not need to include at least one of the beam collimator 30, the acceleration / deceleration unit 32, and the energy analyzer 34. When the workpiece is a large substrate for an FPD, the implantation chamber 14 may be transported into and out of the implantation chamber 14 by moving the workpiece horizontally. For example, the large substrate before implantation may be transported into the implantation chamber 14 from the right (or left) side, moved left (or right) in the implantation chamber 14 to perform ion implantation, and the large substrate after implantation may be transported out from the left (or right) side of the implantation chamber 14. In this way, the ion implantation apparatus 10 may continuously process large substrates in-line.

[0100] 11 is a flowchart showing the flow of an ion implantation method according to a modified example, in which a first implantation step for a first workpiece W1 and a second implantation step for a second workpiece W2 are carried out in parallel.

[0101] First, the first workpiece W1 before the injection process is carried into the first holding device 40 (S30). In S30, the first workpiece W1 after the injection process held in the first holding device 40 may be carried out, and then the first workpiece W1 before the injection process may be carried into the first holding device 40. Alternatively, the second workpiece W2 before the injection process is carried into the second holding device 42 (S32). In S32, the second workpiece W2 after the injection process held in the second holding device 42 may be carried out, and then the second workpiece W2 before the injection process may be carried into the second holding device 42. The order of steps S30 and S32 does not matter; S32 may be started after S30 starts, or S30 may be started after S32 starts. Steps S30 and S32 may be performed simultaneously.

[0102] Next, the first holding device 40 is moved to a first implantation position (e.g., implantation position 84) (S34). The first holding device 40 is reciprocated at the first implantation position, thereby irradiating the reciprocating first workpiece W1 with an ion beam (S36). The number of reciprocating movements of the first workpiece W1 in S36 is not particularly limited, but may be, for example, only one reciprocation. Thereafter, the first holding device 40 is retracted from the first implantation position (S38), and the second holding device 42 is moved to a second implantation position (e.g., implantation position 84) (S40). The first retraction position to which the first holding device 40 is retracted is, for example, located between the first transfer position 80 and the first implantation position. The first retraction position to which the first holding device 40 is retracted may be the same as the first transfer position 80.

[0103] Next, the second holding device 42 is reciprocated at the second implantation position, thereby irradiating the reciprocating second workpiece W2 with an ion beam (S42). The number of reciprocating movements of the second workpiece W2 in S42 is not particularly limited, but may be, for example, only one reciprocation. Thereafter, the second holding device 42 is retracted from the second implantation position (S44). The second retraction position to which the second holding device 42 is retracted is, for example, located between the second transfer position 82 and the second implantation position. The second retraction position to which the second holding device 42 is retracted may be the same as the second transfer position 82.

[0104] If the implantation process for the first workpiece W1 and the second workpiece W2 is not complete (N in S46), steps S34 to S44 are repeated until the implantation process is complete. For example, if the number of reciprocating movements required to complete the implantation process for the first workpiece W1 and the second workpiece W2 is three (i.e., three round trips), steps S34 to S44 are repeated three times. In this case, the step of irradiating the ion beam by making one round trip of the first workpiece W1 and the step of irradiating the ion beam by making one round trip of the second workpiece W2 are alternately performed three times each. In this case, steps S38 and S40 can be performed simultaneously by minimizing the relative distance d between the first workpiece W1 and the second workpiece W2, and steps S44 and S34 can be performed simultaneously by minimizing the relative distance d between the first workpiece W1 and the second workpiece W2. In other words, the first workpiece W1 and the second workpiece W2 can be moved back and forth in the same direction in synchronization while maintaining the relative distance d between them as small as possible, thereby improving the utilization efficiency of the ion beam.

[0105] If the injection process is completed in S46 (Y in S46), the first holding device 40 is moved to the first transfer position 80 (S48), and the second holding device 42 is moved to the second transfer position 82 (S50). The order of steps S48 and S50 does not matter; S50 may be started after S48, or S48 may be started after S50. Steps S48 and S50 may be executed simultaneously. Furthermore, if the first retraction position is the first transfer position 80, step S48 may be omitted because the first holding device 40 is already positioned at the first transfer position 80 in step S38. Similarly, if the second retraction position is the second transfer position 82, step S50 may be omitted because the second holding device 42 is already positioned at the second transfer position 82 in step S44.

[0106] The flow shown in FIG. 11 can be repeatedly executed until the implantation process for multiple workpieces to be processed consecutively is completed. According to the flow shown in FIG. 11 , the first transfer process of loading and unloading the first workpiece W1 into and out of the first holding device 40 and the second transfer process of loading and unloading the second workpiece W2 into and out of the second holding device 42 can be executed simultaneously, thereby improving productivity. The flow shown in FIG. 11 is preferably applied when the implantation time during which the workpiece is irradiated with an ion beam is sufficiently short (e.g., less than half) compared to the transport time required for loading and unloading the workpiece. The flow shown in FIG. 11 is also preferably applied when the implantation time during which the workpiece is irradiated with an ion beam is sufficiently long (e.g., more than twice as long) compared to the transport time required for loading and unloading the workpiece. The flow shown in FIG. 11 can also be applied when the implantation time during which the workpiece is irradiated with an ion beam is approximately the same as the transport time required for loading and unloading the workpiece. In this case, the flow shown in FIG. 10 may be more productive.

[0107] In the above-described embodiment, the beam generating device 12 generates a scanned beam using the beam scanning unit 28 and the beam collimating unit 30. In another embodiment, the beam generating device may generate a ribbon beam. The beam generating device may include a ribbon beam generating unit instead of the beam scanning unit 28. The ribbon beam generating unit generates a ribbon beam by diverging a spot-shaped ion beam in the vertical direction. The ribbon beam generating unit may be configured by an electric field type or magnetic field type beam diverging device.

[0108] In the above-described embodiment, the ion beam extracted from the ion source 20 is a ribbon-shaped beam that expands in the horizontal direction. In another embodiment, the ion beam extracted from the ion source may be a ribbon beam that expands in the vertical direction. In this case, the front slit of the ion source has a slit shape with a long vertical opening width and a short horizontal opening width. Similarly, the extraction electrode of the extraction unit has a slit shape with a long vertical opening width and a short horizontal opening width. In this case, the mass analysis unit is configured to deflect the ribbon beam that expands in the vertical direction in the horizontal direction. In this case, the beam generator does not need to include the beam scanning unit 28 and the beam collimating unit 30. In this case, the ion source and the extraction unit can be considered as a ribbon beam generating unit for generating a ribbon beam that expands in the vertical direction.

[0109] In the other embodiment described above, the size of the vertical irradiation range of the ribbon beam expanded in the vertical direction is larger than the vertical size of the workpiece. Therefore, the beam generating device that generates the ribbon beam is configured to irradiate the ion beam over an irradiation range whose size in the vertical direction is larger than the size of the processing surface of the workpiece. Note that in the above embodiment, the beam generating device 12 that generates the scan beam is configured to irradiate the ion beam over an irradiation range whose size in the vertical direction is larger than the size of the processing surface of the workpiece.

[0110] The above-described embodiment illustrates the case where multiple holding devices 40, 42 are provided in the implantation processing chamber 14. In another embodiment, only a single holding device may be provided in the implantation processing chamber 14. The single holding device may be configured similarly to either the first holding device 40 or the second holding device 42 described above.

[0111] In the above-described embodiment, the scanning direction of the scan beam SB is vertical. In another embodiment, the scanning direction of the scan beam SB may be configured to be inclined relative to the vertical. In this case, the beam scanning unit 28, the beam collimating unit 30, the acceleration / deceleration unit 32, and the energy analysis unit 34 are arranged at positions rotated (i.e., tilted) around the beam line A extending in the z2 direction (e.g., downstream of the mass analysis unit 24 and upstream of the beam scanning unit 28) as the rotation axis. Note that it is also possible to arrange the beam scanning unit 28 and the beam collimating unit 30 alone to rotate, while at least one of the acceleration / deceleration unit 32 and the energy analysis unit 34 is not rotated. In this case, the scanning direction of the scan beam SB is preferably within 45 degrees from the vertical.

[0112] In the above-described embodiment, the first holding device 40 and the second holding device 42 move in the horizontal direction. In another embodiment, the movement direction of the first holding device 40 and the second holding device 42 does not have to be horizontal, and may be inclined relative to the horizontal direction. The movement direction of the first holding device 40 and the second holding device 42 may be a direction different from the horizontal direction and may be any direction that crosses the scan beam.

[0113] Certain aspects of the present disclosure are as follows: (Item 1) An ion implantation apparatus comprising: an ion source that generates ions; an extraction unit that extracts the ions from the ion source to generate an ion beam; a beam scanning unit configured to scan the ion beam back and forth in a scan direction different from a horizontal direction to generate a scan beam; and a holding device configured to hold a workpiece, the holding device being configured to move the workpiece held by the holding device back and forth in a direction crossing the scan beam. (Item 2) The ion implantation apparatus according to Item 1, wherein the holding device moves the workpiece held by the holding device back and forth in the horizontal direction. (Item 3) The ion implantation apparatus according to Item 1 or 2, wherein the scan direction is a direction within 45 degrees of the vertical direction. (Item 4) The ion implantation apparatus according to Item 1 or 2, wherein the scan direction is a vertical direction. (Item 5) The ion implanter according to any one of Items 1 to 4, wherein the ion source includes a front slit through which the ions extracted by the extraction unit pass, and the horizontal opening width of the front slit is larger than the vertical opening width of the front slit. (Item 6) The ion implanter according to Item 5, wherein the ion source includes: an arc chamber having an internal space and the front slit for extracting the ions from plasma generated in the internal space; and a magnet device that applies a magnetic field in the horizontal direction to the internal space. (Item 7) The ion implanter according to Item 5 or 6, wherein the extraction unit includes an extraction electrode having an extraction opening through which the ion beam passes, and the horizontal opening width of the extraction opening is larger than the vertical opening width of the extraction opening. (Item 8) The ion implanter according to any one of Items 1 to 7, further including a mass analysis unit that is provided between the extraction unit and the beam scanning unit and that deflects the ion beam in the horizontal direction. (Item 9) The ion implantation device according to Item 8, wherein the mass analysis unit includes a magnet device that applies a magnetic field to the ion beam in a vertical direction. (Item 10) The ion implantation device according to Item 8 or Item 9, further including a magnetic shield that is provided between the extraction unit and the mass analysis unit and has a passage opening through which the ion beam passes.(Item 11) The ion implanter according to any one of Items 8 to 10, further comprising a beam shaping unit provided between the mass analysis unit and the beam scanning unit, the beam shaping unit including at least one lens device for adjusting at least one of the cross-sectional shape and convergence / divergence angle of the ion beam. (Item 12) The ion implanter according to any one of Items 1 to 11, further comprising a beam collimating unit provided downstream of the beam scanning unit for collimating the scan beam. (Item 13) The ion implanter according to any one of Items 1 to 12, further comprising an energy analysis unit including a deflection unit for deflecting the scan beam in the horizontal direction and an energy analysis slit provided downstream of the deflection unit. (Item 14) The ion implanter according to Item 13, wherein the deflection unit includes a pair of electrodes facing each other across the scan beam, and a power supply for applying a DC voltage to the pair of electrodes. (Item 15) The ion implanter according to Item 14, wherein the pair of electrodes of the deflection unit are arranged to face each other in the horizontal direction. (Item 16) The ion implantation apparatus according to Item 14, wherein the electrode pair of the deflection device is arranged to face each other in a direction perpendicular to the scanning direction. (Item 17) An ion implantation method comprising: generating ions using an ion source; extracting the ions from the ion source to generate an ion beam; scanning the ion beam back and forth in a scanning direction different from a horizontal direction to generate a scan beam; and moving a workpiece back and forth in a direction crossing the scan beam.

[0114] An aspect of the present disclosure is as follows: (Item 18) An ion implantation apparatus including: a beam generating device configured to generate an ion beam to be irradiated onto a workpiece, and to irradiate the ion beam over an irradiation range whose size in a vertical direction is larger than the size of a surface to be processed of the workpiece, a first holding device configured to be able to hold a first workpiece, and configured to move the first workpiece held by the first holding device back and forth in a horizontal direction so that the first workpiece crosses the irradiation range, and a second holding device configured to hold a second workpiece, and configured to move the second workpiece held by the second holding device back and forth in the horizontal direction so that the second workpiece crosses the irradiation range. (Item 19) The ion implantation apparatus according to Item 18, wherein the first holding device is configured to be movable between a first implantation position for irradiating the first workpiece with the ion beam and a first transfer position for loading the first workpiece into or unloading the first holding device, and the second holding device is configured to be movable between a second implantation position for irradiating the second workpiece with the ion beam and a second transfer position for loading the second workpiece into or unloading the second holding device. (Item 20) The ion implantation apparatus according to Item 19, wherein the first implantation position and the second implantation position are located between the first transfer position and the second transfer position. (Item 21) The ion implantation apparatus according to Item 19 or 20, wherein a first movement range in which the first holding device reciprocates the first workpiece at the first implantation position overlaps with a second movement range in which the second holding device reciprocates the second workpiece at the second implantation position, as viewed in the beam traveling direction. (Item 22) The ion implantation apparatus according to item 21, wherein the first movement range is common to the second movement range. (Item 23) The ion implantation apparatus according to any one of items 19 to 22, wherein the vertical position of the first workpiece held by the first holding device at the first implantation position is common to the vertical position of the second workpiece held by the second holding device at the second implantation position.(Item 24) The ion implantation apparatus according to any one of Items 19 to 23, wherein the position in the beam traveling direction of the first workpiece held by the first holding device at the first implantation position is the same as the position in the beam traveling direction of the second workpiece held by the second holding device at the second implantation position. (Item 25) The ion implantation apparatus according to any one of Items 19 to 24, wherein the first holding device is configured to be immovable to the second transfer position, and the second holding device is configured to be immovable to the first transfer position. (Item 26) The ion implantation apparatus according to any one of Items 18 to 25, wherein the first holding device and the second holding device are movable in the same direction. (Item 27) The ion implantation apparatus according to any one of Items 18 to 26, wherein the first holding device and the second holding device are simultaneously movable in the same direction while maintaining the relative distance between the first workpiece held by the first holding device and the second workpiece held by the second holding device. (Item 28) The ion implantation apparatus according to any one of Items 18 to 27, wherein the first holding device and the second holding device are movable along a common guide rail. (Item 29) The ion implantation apparatus according to any one of Items 18 to 28, wherein the first holding device comprises a first vertical angle adjustment mechanism that adjusts the vertical orientation of the first workpiece and a first horizontal angle adjustment mechanism that adjusts the horizontal orientation of the first workpiece, and the second holding device comprises a second vertical angle adjustment mechanism that adjusts the vertical orientation of the second workpiece and a second horizontal angle adjustment mechanism that adjusts the horizontal orientation of the second workpiece. (Item 30) An ion implantation apparatus described in any one of Items 18 to 28, wherein the first holding device comprises a first vertical angle adjustment mechanism that rotates around the horizontal rotation axis to adjust the orientation of the first workpiece, and a first horizontal angle adjustment mechanism that rotates around the vertical rotation axis to adjust the orientation of the first workpiece, and the second holding device comprises a second vertical angle adjustment mechanism that rotates around the horizontal rotation axis to adjust the orientation of the second workpiece, and a second horizontal angle adjustment mechanism that rotates around the vertical rotation axis to adjust the orientation of the second workpiece.(Item 31) The ion implantation apparatus described in any one of Items 18 to 28, wherein the first holding device is provided with a first vertical angle adjustment mechanism that adjusts the orientation of the first workpiece, and the first vertical angle adjustment mechanism is configured to adjust the orientation of the processing surface of the first workpiece to be along the horizontal direction when the first workpiece is loaded or unloaded, and to adjust the orientation of the processing surface of the first workpiece to be not along the horizontal direction when the first workpiece is irradiated with the ion beam; and the second holding device is provided with a second vertical angle adjustment mechanism that adjusts the orientation of the second workpiece, and the second vertical angle adjustment mechanism is configured to adjust the orientation of the processing surface of the second workpiece to be along the horizontal direction when the second workpiece is loaded or unloaded, and to adjust the orientation of the processing surface of the second workpiece to be not along the horizontal direction when the second workpiece is irradiated with the ion beam. (Item 32) The ion implantation apparatus according to any one of Items 18 to 31, wherein the first holding device comprises a first horizontal angle adjustment mechanism that adjusts the horizontal orientation of the first workpiece and a first twist mechanism that adjusts the twist angle of the first workpiece, and the second holding device comprises a second horizontal angle adjustment mechanism that adjusts the horizontal orientation of the second workpiece and a second twist mechanism that adjusts the twist angle of the second workpiece. (Item 33) The ion implantation apparatus according to any one of Items 18 to 32, wherein the beam generation device comprises a beam scanning unit that scans the ion beam back and forth across the irradiation range. (Item 34) The ion implantation apparatus according to any one of Items 18 to 32, wherein the beam generation device comprises a ribbon beam generation unit that generates a ribbon beam having a beam size corresponding to the size of the irradiation range.(Item 35) An ion implantation method comprising: generating an ion beam to be irradiated onto a workpiece; irradiating the ion beam over an irradiation range whose size in the vertical direction is larger than the size of the surface to be processed of the workpiece; holding a first workpiece in a first holding device; using the first holding device to move the first workpiece back and forth in a horizontal direction so that the first workpiece crosses the irradiation range; holding a second workpiece in a second holding device; and using the second holding device to move the second workpiece back and forth in the horizontal direction so that the second workpiece crosses the irradiation range.

[0115] Fig. 12 is a top view showing a schematic configuration of an ion implanter 10A according to another embodiment. Fig. 13 is a side view showing a schematic configuration of an ion implanter 10A according to another embodiment. The ion implanter 10A shown in Figs. 12 and 13 differs from the ion implanter 10 shown in Figs. 1 and 2 in that a beam current measuring device 100 is provided on a beam stopper 38. The ion implanter 10A shown in Figs. 12 and 13 will be described below, focusing on the differences from the ion implanter 10 shown in Figs. 1 and 2, and a description of the commonalities will be omitted as appropriate.

[0116] The beam stopper 38 is provided at the most downstream position of the beam line A and is attached to, for example, the side wall of the implantation processing chamber 14. When the workpieces W1 and W2 are not present in the beam line A, the ion beam is incident on the beam stopper 38. The beam current measuring device 100 is configured to measure the beam current of the ion beam incident on the beam stopper 38. The beam current measuring device 100 is sometimes called a tuning Faraday.

[0117] Fig. 14 is a front view schematically showing a beam current measurement instrument 100 according to an embodiment. Fig. 15 is a cross-sectional view schematically showing an A-A cross section of the beam current measurement instrument 100 shown in Fig. 14. As shown in the figure, the beam current measurement instrument 100 includes a first electrode 110, a plurality of second electrodes 120, and a magnetic field generator 130 configured to apply an electron suppression magnetic field B around these electrodes. The magnetic field generator 130 will be described in detail later.

[0118] The first electrode 110 has a first beam irradiation surface 112 onto which an ion beam, for example, a scan beam SB, is irradiated. The first beam irradiation surface 112 corresponds to the surface of the first electrode 110 facing upstream. The first electrode 110 is a plate-shaped electrode arranged so as to be perpendicular to the traveling direction of the ion beam (z3 direction), and the first beam irradiation surface 112 is arranged along a plane (x3-y plane) perpendicular to the z3 direction.

[0119] Because the ion beam incident on the beam current measurement device 100 is scanned in the vertical direction (y direction) as described above, the area that can be irradiated by the ion beam in the x3-y plane is elongated along the y direction. The dimensions of the first electrode 110 in the x3 direction and the y direction are determined so that this elongated irradiation range of the ion beam falls within the first beam irradiation surface 112. In other words, the dimension of the scan beam SB in the y direction is smaller than the dimension of the first electrode 110 in the y direction. Furthermore, the dimension of the scan beam SB in the x3 direction is smaller than the dimension of the first electrode 110 in the x3 direction. Therefore, when the scan beam SB is incident on the beam current measurement device 100, the entire scan beam SB is irradiated onto the first beam irradiation surface 112. The scan beam SB is not irradiated outside the first electrode 110.

[0120] The first electrode 110 is configured to detect ions of the ion beam irradiated onto the first beam irradiation surface 112. The first electrode 110 is formed of, for example, graphite. Alternatively, the first electrode 110 may be formed of a metal such as a high-melting-point metal or another suitable conductor. The beam current measurement device 100 is provided with a first current detector 114 electrically connected to the first electrode 110. The first current detector 114 is configured to detect ions of the ion beam irradiated onto the first beam irradiation surface 112 as a first ion beam current. The first current detector 114 may be, for example, a known ammeter. The measurement result of the first ion beam current by the first current detector 114 can be provided from the first current detector 114 to the control device 18.

[0121] The first electrode 110 has a plurality of apertures 116 formed in a predetermined arrangement on the first beam irradiation surface 112. The first electrode 110 may have at least three apertures 116, or any number of apertures 116. As a non-limiting example, the first electrode 110 has four apertures 116 as shown.

[0122] The multiple apertures 116 are arranged in the y direction. The multiple apertures 116 have the same shape when viewed in the z3 direction. Each aperture 116 has an aperture width in the y direction and an aperture length in the x3 direction, with the aperture length being longer than the aperture width. In other words, each aperture 116 is elongated along the x3 direction.

[0123] The aperture length of the aperture 116 may be equal to or somewhat longer than the x3 dimension of the ion beam, allowing the aperture 116 to accommodate the entire width of the ion beam in the x3 direction.

[0124] The dimension of the ion beam in the y direction is larger than the dimension of each of the multiple apertures 116 in the y direction. Therefore, a portion of the ion beam irradiated onto the first beam irradiation surface 112 is cut out by the aperture 116. The cut-out beam portion 118 passes through the aperture 116 and travels further downstream within the beam current measuring device 100. The remaining portion of the ion beam excluding the beam portion 118 is irradiated onto the first beam irradiation surface 112, as described above, and is detected as the first ion beam current by the first current detector 114.

[0125] The multiple second electrodes 120 are disposed downstream of the first electrode 110 in the z3 direction and correspond to each of the multiple apertures 116 of the first electrode 110. Thus, the multiple second electrodes 120 are arranged in the y direction, similar to the multiple apertures 116 of the first electrode 110. The multiple second electrodes 120 have the same shape when viewed in the z3 direction. The same number of multiple second electrodes 120 as the multiple apertures 116 are provided, and a single Faraday cup is formed by the combination of one aperture 116 and one corresponding second electrode 120.

[0126] Each of the multiple second electrodes 120 has a second beam irradiation surface 122. The second electrode 120 is a cup-shaped electrode arranged facing the back surface of the first electrode 110, i.e., the surface of the first electrode 110 opposite the first beam irradiation surface 112, and the second beam irradiation surface 122 includes the bottom surface of the cup-shaped electrode facing the back surface of the first electrode 110. The dimensions of the second electrode 120 in the x3 direction and y direction are determined so that the beam portion 118 from the corresponding aperture 116 fits within the second beam irradiation surface 122. Therefore, the second electrode 120 has an elongated shape along the x3 direction. The entire beam portion 118 passing through the corresponding aperture 116 is irradiated onto the second beam irradiation surface 122. The beam portion 118 is not irradiated outside the second electrode 120.

[0127] The plurality of second electrodes 120 are configured to detect ions of the ion beam (i.e., beam portions 118) that have passed through the plurality of apertures 116 and irradiated onto the second beam irradiation surfaces 122 of the plurality of second electrodes 120, respectively. Similar to the first electrode 110, the second electrodes 120 are formed of, for example, graphite or another suitable conductor. The beam current measurement device 100 is provided with a plurality of second current detectors 124. Each of the plurality of second current detectors 124 is electrically connected to a respective one of the plurality of second electrodes 120 and configured to detect the ions of the beam portions 118 that have irradiated onto the second beam irradiation surfaces 122 as a second ion beam current. The second current detectors 124 may be, for example, a known ammeter. The measurement result of the second ion beam current by the second current detectors 124 may be provided to the control device 18 from the second current detectors 124.

[0128] The control device 18 may use the measurement results of the beam current measurement device 100 as follows: For example, the control device 18 may sum up the measurement results of the first ion beam current by the first current detector 114 and the measurement results of the second ion beam current by the second current detector 124, and consider the sum of the beam currents thus obtained to be the beam current of the ion beam.

[0129] Furthermore, when the scan beam SB is irradiated, the measurement results of the first ion beam current and the measurement results of the second ion beam current are assumed to be in a predetermined ratio. This ratio is based on the ratio between the y-direction dimension of the scan beam SB and the sum of the y-direction dimensions of the multiple apertures 116. Therefore, the validity of the measurement by the beam current measuring device 100 can be evaluated by comparing the ratio of the first ion beam current and the second ion beam current obtained by actual measurement with the assumed ratio. For example, if the difference between the actually measured ratio and the assumed ratio is within a predetermined range, the measurement is deemed valid. However, if this difference deviates from the predetermined range, the measurement is deemed invalid. Alternatively, the validity of the measurement by each second electrode 120 can be evaluated by comparing the measurement results from each second electrode 120.

[0130] When the ion beam is scanned and irradiated as a scan beam SB, the beam density distribution of the ion beam in the scanning direction can be estimated from the change over time of the beam current detected from one second electrode 120. Furthermore, by comparing the measurement results of the change over time of the beam current detected from each second electrode 120, the validity of the measurement by each second electrode 120 can also be evaluated.

[0131] 16 is a schematic diagram showing an example of the magnetic field generator 130 of the beam current measurement instrument 100 according to the embodiment and the electron suppression magnetic field generated thereby. The magnetic field generator 130 is configured to apply a first magnetic field B11 that suppresses the inflow of electrons to the first electrode 110 and the outflow of electrons from the first electrode 110, and a second magnetic field B12 that suppresses the inflow of electrons to each of the multiple second electrodes 120 and the outflow of electrons from each of the multiple second electrodes 120.

[0132] The magnetic field generator 130 includes a plurality of first permanent magnets 132 that generate a first magnetic field B11, a plurality of second permanent magnets 134 that generate a second magnetic field B12, and a yoke 136 that connects the plurality of first permanent magnets 132 and the plurality of second permanent magnets 134. The magnetic field generator 130 is disposed between the first electrode 110 and the second electrode 120 in the z3 direction.

[0133] When viewed in the z3 direction, the multiple first permanent magnets 132 are arranged in the y direction such that each of the multiple apertures 116 is disposed between two first permanent magnets 132. In the illustrated example of arrangement of the first permanent magnets 132, one aperture 116 is disposed between two adjacent first permanent magnets 132 in the y direction arrangement of the first permanent magnets 132, and one first permanent magnet 132 is disposed between two adjacent apertures 116 in the y direction. In other words, the first permanent magnets 132 and the apertures 116 are arranged alternately one by one in the y direction.

[0134] The multiple first permanent magnets 132 are disposed between the first electrode 110 and the yoke 136 in the z3 direction. More specifically, the multiple first permanent magnets 132 are attached to a yoke front surface 136a. The yoke 136 is disposed downstream of the first electrode 110 and upstream of the second electrode 120 in the z3 direction, and the yoke front surface 136a corresponds to the surface of the yoke 136 facing the first electrode 110.

[0135] The first permanent magnet 132 is arranged along the aperture 116 in the x3 direction, so that the first magnetic field B11 is generated over the entire length of the aperture 116 in the x3 direction.

[0136] Two first permanent magnets 132 adjacent to each other in the y direction and sandwiching the aperture 116 are arranged so that opposite magnetic poles face the first electrode 110. For convenience, in FIG. 16 , the north poles of the magnets are represented in black and the south poles in white. Taking the two first permanent magnets 132 sandwiching the top aperture 116 in the y direction in FIG. 16 as an example, the first permanent magnet 132 above this aperture 116 is arranged with its south pole facing the first electrode 110 and its north pole in contact with the yoke 136, while the first permanent magnet 132 below is arranged with its north pole facing the first electrode 110 and its south pole in contact with the yoke 136. In this way, the multiple first permanent magnets 132 are arranged so that the magnetic poles face alternately in opposite directions.

[0137] Therefore, the multiple first permanent magnets 132 generate a first magnetic field B11 in a space upstream of the first electrode 110 in the z3 direction and adjacent to the first beam irradiation surface 112. When viewed in the z3 direction, the first magnetic field B11 is a cusp magnetic field having magnetic poles between adjacent apertures 116 among the multiple apertures 116. The magnetic poles of the cusp magnetic field follow the y-direction arrangement of the first permanent magnets 132, with different magnetic poles alternately aligned in the y direction.

[0138] 16 , additional first permanent magnets 132a may be arranged in the y direction together with the first permanent magnets 132 arranged adjacent to the aperture 116. When viewed in the z3 direction, the additional first permanent magnets 132a are arranged at both ends of the first electrode 110 in the y direction, above and below the arrangement of the first permanent magnets 132. The additional first permanent magnets 132a are attached to the yoke front surface 136a, similar to the first permanent magnets 132. By adding the first permanent magnets 132a in this manner, the y-direction length of the region where the first magnetic field B11 is generated can be matched to the y-direction length of the first electrode 110.

[0139] Similar to the first permanent magnets 132, the additional first permanent magnets 132a are also arranged so that the magnetic pole orientation is opposite to that of the first permanent magnets 132 adjacent to them in the y direction. Taking the top first permanent magnet 132a in the y direction as an example in FIG. 16 , the additional first permanent magnet 132a is arranged with its N pole facing the first electrode 110 and its S pole in contact with the yoke 136, opposite to the magnetic pole orientation of the first permanent magnet 132 adjacent to it above the top aperture 116.

[0140] When viewed in the z3 direction, the multiple second permanent magnets 134 are arranged in the y direction such that each of the multiple second electrodes 120 is disposed between two second permanent magnets 134. In the illustrated example of the arrangement of the second permanent magnets 134, one second electrode 120 is disposed between two adjacent second permanent magnets 134 in the y direction arrangement of the second permanent magnets 134, and two second permanent magnets 134 are disposed between two adjacent second electrodes 120 in the y direction. In other words, a second permanent magnet 134 is provided on both sides of each second electrode 120, and multiple such sets of one second electrode 120 and two second permanent magnets 134 are lined up in the y direction.

[0141] Furthermore, as described above, the second electrode 120 is disposed at the same position in the y direction as the aperture 116, and therefore the first permanent magnets 132 and the second electrodes 120 are arranged alternately in the y direction when viewed in the z3 direction. The multiple first permanent magnets 132 are arranged in the y direction such that each of the multiple first permanent magnets 132 is disposed between two second permanent magnets 134 when viewed in the z3 direction. As shown in the figure, two second permanent magnets 134 are disposed between two second electrodes 120 adjacent to each other in the y direction, and one first permanent magnet 132 is disposed between these two second permanent magnets 134.

[0142] The second permanent magnets 134 are disposed between the second electrode 120 and the yoke 136 in the z3 direction. More specifically, the second permanent magnets 134 are attached to the yoke back surface 136b. The yoke back surface 136b faces the second electrode 120, i.e., corresponds to the surface of the yoke 136 opposite to the yoke front surface 136a.

[0143] The second permanent magnet 134 is disposed along the second electrode 120 in the x3 direction, so that the second magnetic field B12 is generated over the entire length of the second electrode 120 in the x3 direction.

[0144] Two second permanent magnets 134 adjacent to each other in the y direction and sandwiching the second electrode 120 are arranged so that opposite magnetic poles face the first electrode 110. Taking the set of two second permanent magnets 134 sandwiching the uppermost second electrode 120 in the y direction in FIG. 16 as an example, the second permanent magnet 134 above this second electrode 120 is arranged with its south pole facing the first electrode 110 and in contact with the yoke 136, and the second permanent magnet 134 below is arranged with its north pole facing the first electrode 110 and in contact with the yoke 136. 16, the set of two second permanent magnets 134 sandwiching the second electrode 120 from the top in the y direction has the upper second permanent magnet 134 arranged with its north pole facing the first electrode 110 and in contact with the yoke 136, while the lower second permanent magnet 134 has its south pole facing the first electrode 110 and in contact with the yoke 136. This magnetic pole orientation is repeated for the sets of two second permanent magnets 134 sandwiching the third and fourth second electrodes 120 from the top in the y direction in FIG.

[0145] Therefore, the plurality of second permanent magnets 134 generate a second magnetic field B12 around and inside the second electrode 120, including the upstream entrance of the second electrode 120. Because the second electrode 120 is a cup-shaped electrode as described above, the second magnetic field B12 crosses the space surrounded by the cup-shaped electrode in the y direction.

[0146] Furthermore, the magnetic pole orientation of the second permanent magnet 134 is determined so that the first permanent magnet 132 and the second permanent magnet 134 mutually strengthen their magnetic fields in the space upstream of the first electrode 110 and adjacent to the first beam irradiation surface 112. As shown in the figure, the magnetic pole orientation of the second permanent magnet 134 adjacent to a certain first permanent magnet 132 is the same as that of the first permanent magnet 132. Therefore, one first permanent magnet 132 and two second permanent magnets 134 arranged between two adjacent second electrodes 120 have the same magnetic pole orientation. The direction of the second magnetic field B12 generated by the second permanent magnet 134 is the same as that of the first magnetic field B11 in the space upstream of the first electrode 110 and adjacent to the first beam irradiation surface 112. Therefore, the second magnetic field B12 can strengthen the first magnetic field B11 in the space upstream of the first electrode 110 and adjacent to the first beam irradiation surface 112. Similarly, the direction of the first magnetic field B11 is the same as the direction of the second magnetic field B12 when it crosses the second electrode 120 in the y direction. Therefore, the first magnetic field B11 can strengthen the second magnetic field B12 when it crosses the second electrode 120 in the y direction.

[0147] The yoke 136 is a single plate-shaped yoke arranged perpendicular to the z3 direction and has a plurality of openings 138 for passing the beam portion 118. The yoke 136 is made of, for example, pure iron or other soft magnetic material. The same yoke 136 is used for the first permanent magnet 132 and the second permanent magnet 134. This allows for space savings, cost savings, and shorter assembly time.

[0148] With this configuration, the magnetic field generator 130 can generate a cusp magnetic field as a first magnetic field B11 in a space adjacent to the first beam irradiation surface 112 upstream of the first electrode 110, and can generate a second magnetic field B12 that crosses the second electrode 120 in the y direction in a space surrounded by the second electrode 120. The first magnetic field B11 and the second magnetic field B12 are superimposed to generate an electron suppression magnetic field B. The first magnetic field B11 acts to suppress the inflow of electrons into the first electrode 110 and the outflow of electrons from the first electrode 110. The second magnetic field B12 acts to suppress the inflow of electrons into each of the multiple second electrodes 120 and the outflow of electrons from each of the multiple second electrodes 120. Such an electron suppression magnetic field B makes it possible to accurately measure the beam current of the ion beam at each of the first electrode 110 and the multiple second electrodes 120.

[0149] Some existing beam current measuring instruments include a single Faraday cup and measure the beam current of the entire ion beam, including the scan beam SB, using this single Faraday cup. In this case, to measure a relatively large ion beam, such as the scan beam SB, the aperture of the single Faraday cup must be enlarged to accommodate the ion beam. However, if the Faraday cup aperture is too large, it becomes difficult to properly apply an electron suppression magnetic field to suppress electrons from entering or exiting the Faraday cup, resulting in a decrease in beam current detection accuracy. Another existing beam current measuring instrument uses a configuration in which multiple Faraday cups, each with an aperture smaller than the size of the ion beam, are arranged side by side. However, this configuration has the disadvantage of being unable to measure the beam current of an ion beam that does not enter the Faraday cup aperture.

[0150] In contrast, according to a non-limiting exemplary embodiment of the present disclosure, the beam current of the beam portion 118 of the ion beam incident on the beam current measurement device 100 can be measured by the second electrode 120, and the beam current of the portion other than the beam portion 118 can be measured by the first electrode 110. Therefore, the above-mentioned problems in existing beam current measurement devices can be solved or alleviated.

[0151] Furthermore, some existing beam current measurement devices generate an electron suppression magnetic field by placing magnets only at both ends of the device. In this case, the magnets at both ends must be relatively large to generate the desired magnetic field, which results in a problem of a strong stray magnetic field around the beam current measurement device. If such a stray magnetic field were to extend to the region on the wafer where ions are implanted, it could affect the behavior of electrons around the wafer. As a result, the stray magnetic field could cause product defects in devices processed by the ion implantation system.

[0152] In contrast, according to a non-limiting exemplary embodiment of the present disclosure, the first permanent magnets 132, each with a different magnetic pole orientation, are arranged at relatively short intervals. This reduces the distance between the magnetic poles and the magnetic path length, allowing the magnetic flux densities of the different magnetic poles to cancel each other out over a long distance. This reduces the magnetic field leakage in the region on the wafer where ions are implanted. Similarly, the second permanent magnet 134 also reduces the magnetic field leakage in the region on the wafer where ions are implanted.

[0153] The first permanent magnets 132 and the second permanent magnets 134 may be arranged in a different manner from the illustrated example.

[0154] In the above example, the first permanent magnets 132 and the apertures 116 are arranged alternately one by one in the y direction. Alternatively, like the arrangement of the second permanent magnets 134 described above, a first permanent magnet 132 may be provided on both sides of each aperture 116, and multiple sets of one aperture 116 and two first permanent magnets 132 may be arranged in the y direction. In this case, the multiple first permanent magnets 132 are also arranged in the y direction such that each of the multiple apertures 116 is positioned between two first permanent magnets 132 when viewed in the z3 direction. Two first permanent magnets 132 adjacent to each other in the y direction across one aperture 116 are arranged so that their opposite magnetic poles face the first electrode 110.

[0155] Alternatively, the second permanent magnets 134 and the second electrodes 120 may be arranged alternately one by one in the y direction. Even in this case, the multiple second permanent magnets 134 are arranged in the y direction such that, when viewed in the z3 direction, each of the multiple second electrodes 120 is disposed between two second permanent magnets 134. Two second permanent magnets 134 adjacent to each other in the y direction, sandwiching one second electrode 120 therebetween, are arranged so that their opposite magnetic poles face the first electrode 110.

[0156] Fig. 17 is a partial cross-sectional view showing in more detail a portion of the beam current measurement device 100 shown in Fig. 15. As described above, the beam current measurement device 100 includes a first electrode 110, a plurality of second electrodes 120, and a magnetic field generator 130 disposed between the first electrode 110 and the plurality of second electrodes 120, the magnetic field generator 130 including a plurality of first permanent magnets 132, a plurality of second permanent magnets 134, and a yoke 136. The first electrode 110 has a plurality of recesses 111 arranged corresponding to the plurality of second electrodes 120, and an aperture 116 is formed at the bottom of each recess 111.

[0157] The beam current measurement device 100 includes a cooling block 140 for cooling the first electrode 110. The cooling block 140 is disposed between the first electrode 110 and the yoke 136 in the z3 direction and between the recesses 111 of the first electrode 110 in the y direction. The cooling block 140 is attached to the rear surface of the first electrode 110 and is in thermal contact with the first electrode 110. The cooling block 140 is formed of, for example, aluminum, but may also be formed of other suitable metals or highly thermally conductive materials. A coolant flow path for flowing a coolant (e.g., cooling water) may be formed inside the cooling block 140. The cooling block 140 can suppress excessive temperature rise of the first electrode 110 due to irradiation with an ion beam. A similar cooler (not shown) may also be attached to the second electrode 120.

[0158] A recess for accommodating the first permanent magnet 132 is provided on the surface of the cooling block 140 on the side opposite the first electrode 110 in the z3 direction. A protrusion 142 is formed on the yoke front surface 136a of the yoke 136 to allow contact between the first permanent magnet 132 accommodated in this recess of the cooling block 140 and the yoke 136. In this way, the first permanent magnet 132 can be disposed close to the first electrode 110 while being in contact with the yoke 136, and the first electrode 110 can be cooled by the cooling block 140.

[0159] 18 is a schematic diagram showing another example of the magnetic field generator 130 of the beam current measurement instrument 100 according to the embodiment. As in the above-described embodiment, the magnetic field generator 130 includes a plurality of first permanent magnets 132 that apply a first magnetic field B11 to the vicinity of the first beam irradiation surface 112 of the first electrode 110, and a plurality of second permanent magnets 134 that apply a second magnetic field B12 to the second electrode 120.

[0160] The arrangement of the first permanent magnets 132 is similar to that of the above-described embodiment, but the arrangement of the second permanent magnets 134 is different from that of the above-described embodiment. As shown in the figure, two second permanent magnets 134 adjacent to each other in the y direction, sandwiching the second electrode 120 therebetween, are arranged with their opposite magnetic poles facing each other. For example, the second permanent magnet 134 above the second electrode 120 faces its south pole toward the second electrode 120, and the second permanent magnet 134 below the second electrode 120 faces its north pole toward the second electrode 120. In this manner, the second magnetic field B12 can also be generated so as to cross the second electrode 120 in the y direction.

[0161] 19( a) and 19(b) are schematic diagrams showing an exemplary magnet arrangement of the magnetic field generator 130. FIGS. 19(a) and 19(b) schematically show the arrangement of the first permanent magnets 132 in the longitudinal direction of the aperture 116 (i.e., the x3 direction) as viewed in the z3 direction. As shown in FIG. 19(a), the first permanent magnets 132 may be arranged without any gaps in the x3 direction along the aperture 116. Alternatively, as shown in FIG. 19(b), the first permanent magnets 132 may be arranged in the x3 direction along the aperture 116 with some gaps in the x3 direction. By adjusting the gaps between the first permanent magnets 132, it is possible to adjust the magnetic field strength distribution in, for example, the x3 direction produced by the first permanent magnets 132.

[0162] In the above-described embodiment, the beam current measuring device 100 is provided on the beam stopper 38. However, in addition to or instead of this, the beam current measuring device 100 may be provided at another location in the beamline A. For example, the beam current measuring device 100 may be provided inside the implantation chamber 14 and be movable to and from the surface of the workpieces W1 and W2. The beam current measuring device 100 may be retracted from the implantation position where the workpieces W1 and W2 are located during ion implantation, and inserted into the implantation position when the workpieces W1 and W2 are not at the implantation position. In this manner, the beam current measuring device 100 can measure the scanning beam SB at the surface of the workpieces W1 and W2.

[0163] An aspect of the present disclosure is as follows: (Item 36) An ion implantation apparatus including a beam current measuring device comprising: a first electrode having a first beam irradiation surface and detecting ions of an ion beam irradiated on the first beam irradiation surface, the first electrode having a plurality of apertures formed at a predetermined arrangement on the first beam irradiation surface; a plurality of second electrodes arranged downstream of the first electrode in a traveling direction of the ion beam and corresponding to each of the plurality of apertures, each of the plurality of second electrodes having a second beam irradiation surface and detecting ions of the ion beam that pass through each of the plurality of apertures and irradiated on the second beam irradiation surface of each of the plurality of second electrodes; and a magnetic field generator configured to apply a first magnetic field that suppresses electrons from flowing into the first electrode and electrons from flowing out of the first electrode, and a second magnetic field that suppresses electrons from flowing into each of the plurality of second electrodes and electrons from flowing out of each of the plurality of second electrodes. (Item 37) The ion implantation device according to Item 36, wherein the magnetic field generator is configured to generate, as the first magnetic field, a cusp magnetic field in a space adjacent to the first beam irradiation surface upstream of the first electrode in the traveling direction, and the cusp magnetic field has a magnetic pole between adjacent apertures of the plurality of apertures as viewed in the traveling direction. (Item 38) The ion implantation device according to Item 36 or 37, wherein each second electrode is a cup-shaped electrode, and the magnetic field generator is configured to generate, as the second magnetic field, a magnetic field that crosses a space surrounded by the cup-shaped electrodes. (Item 39) The ion implantation device according to any one of Items 36 to 38, wherein the plurality of apertures of the first electrode and the plurality of second electrodes are both arranged in a first direction perpendicular to the traveling direction. (Item 40) The ion implantation apparatus described in Item 39, wherein the magnetic field generator comprises: a plurality of first permanent magnets arranged in the first direction so that each of the plurality of apertures is positioned between two first permanent magnets when viewed toward the direction of travel, and which generate the first magnetic field; and a plurality of second permanent magnets arranged in the first direction so that each of the plurality of second electrodes is positioned between two second permanent magnets when viewed toward the direction of travel, and which generate the second magnetic field.(Item 41) The ion implantation device according to Item 40, wherein the two first permanent magnets are arranged so that different magnetic poles face the first electrode, and the two second permanent magnets are arranged so that different magnetic poles face the first electrode. (Item 42) The ion implantation device according to Item 40, wherein the two first permanent magnets are arranged so that different magnetic poles face the first electrode, and the two second permanent magnets are arranged so that different magnetic poles face each other. (Item 43) The ion implantation device according to any one of Items 40 to 42, wherein the magnetic poles of the second permanent magnets are oriented such that the first permanent magnets and the second permanent magnets reinforce each other's magnetic fields in a space adjacent to the first beam irradiation surface upstream of the first electrode in the traveling direction. (Item 44) The ion implantation device according to any one of Items 40 to 43, wherein the magnetic field generator includes a yoke connecting the plurality of first permanent magnets and the plurality of second permanent magnets. (Item 45) The ion implantation device according to Item 44, wherein the yoke is disposed downstream of the first electrode in the traveling direction and has a yoke front surface facing the first electrode and a yoke back surface facing away from the first electrode, the plurality of first permanent magnets are disposed on the yoke front surface, and the plurality of second permanent magnets are disposed on the yoke back surface. (Item 46) The ion implantation device according to any one of Items 39 to 45, wherein each of the plurality of apertures has an aperture width in the first direction and an aperture length in a second direction perpendicular to the traveling direction of the ion beam and the first direction, the aperture length being longer than the aperture width. (Item 47) The ion implantation device according to any one of Items 39 to 46, wherein the dimension of the ion beam in the first direction is smaller than the dimension of the first electrode in the first direction and larger than the dimension of each of the plurality of apertures in the first direction. (Item 48) An ion implantation apparatus described in any one of Items 39 to 47, further comprising a beam scanner arranged upstream of the first electrode in the direction of propagation of the ion beam and capable of scanning the ion beam in the first direction by applying at least one of an electric field and a magnetic field to the ion beam.(Item 49) The ion implantation apparatus described in any one of Items 36 to 48, wherein the beam current measuring device comprises: a first current detector electrically connected to the first electrode and detecting ions of the ion beam irradiated onto the first beam irradiation surface as a first ion beam current; and a second current detector electrically connected to each of the plurality of second electrodes and detecting ions of the ion beam irradiated onto the second beam irradiation surface as a second ion beam current. (Item 50) A beam current measuring device comprising: a first electrode having a first beam irradiation surface and detecting ions of an ion beam irradiated on the first beam irradiation surface, the first electrode having a plurality of apertures formed in a predetermined arrangement on the first beam irradiation surface; a plurality of second electrodes arranged downstream of the first electrode in the traveling direction of the ion beam and corresponding to each of the plurality of apertures, each of the plurality of second electrodes having a second beam irradiation surface, and detecting ions of the ion beam that pass through each of the plurality of apertures and are irradiated on the second beam irradiation surface of each of the plurality of second electrodes; and a magnetic field generator configured to apply a first magnetic field that suppresses the inflow of electrons into the first electrode and the outflow of electrons from the first electrode, and a second magnetic field that suppresses the inflow of electrons into each of the plurality of second electrodes and the outflow of electrons from each of the plurality of second electrodes.

[0164] While the present disclosure has been described above with reference to the above-described embodiments, the present disclosure is not limited to the above-described embodiments, and the configurations of the embodiments may be appropriately combined or substituted. Furthermore, based on the knowledge of a person skilled in the art, it is also possible to appropriately rearrange the combinations and processing orders in the embodiments, and to apply various design changes and other modifications to the embodiments. Such rearrangements and modifications may also be included in the scope of the ion implantation apparatus and ion implantation method according to the present disclosure.

[0165] Embodiments of the present disclosure may take the form of a computer program comprising one or more computer-readable sequences describing the methods of the present disclosure, or a non-transitory tangible recording medium (e.g., non-volatile memory, magnetic tape, magnetic disk, or optical disk) on which such a computer program is stored, and a processor may execute such a computer program to implement the methods of the present disclosure.

[0166] The present disclosure can be used in the fields of ion implantation devices and beam current measurement devices.

[0167] 10... ion implantation device, 12... beam generation device, 14... implantation processing chamber, 16... transport device, 18... control device, 20... ion source, 20a... arc chamber, 20b... internal space, 20c... front slit, 22... extraction section, 22a... first extraction electrode, 22b... second extraction electrode, 22c... first extraction opening, 22d... second extraction opening, 23... magnetic shield, 24... mass analysis section, 24a... mass analysis magnet device, 24b... mass analysis slit, 26...Beam shaping section, 26a...Lens device, 28...Beam scanning section, 28a, 28b...Scanning electrode pair, 30...Beam collimating section, 30a, 30b...Collimating lens electrode, 34...Energy analysis section, 34a, 34b...AEF electrode pair, 34c...Energy analysis slit, 40...First holding device, 42...Second holding device, 44...Guide rail, 50...First chuck mechanism, 50a...First lift mechanism, 52...First twist mechanism, 54...Second 1 vertical angle adjustment mechanism, 56...first horizontal angle adjustment mechanism, 58...first reciprocating mechanism, 60...second chuck mechanism, 60a...second lift mechanism, 62...second twist mechanism, 64...second vertical angle adjustment mechanism, 66...second horizontal angle adjustment mechanism, 68...second reciprocating mechanism, 70...first transfer device, 72...second transfer device, 74...first transfer port, 76...second transfer port, 80...first transfer position, 82...second transfer position, 84...implantation position, 100...beam Current measuring device, 110...first electrode, 112...first beam irradiation surface, 116...aperture, 120...second electrode, 122...second beam irradiation surface, 130...magnetic field generator, 132...first permanent magnet, 134...second permanent magnet, 136...yoke, A...beamline, SB...scan beam, W1...first processed object, W2...second processed object, B11...first magnetic field, B12...second magnetic field, C...movement range, E1...first movable range, E2...second movable range.

Claims

1. An ion implantation device comprising: a first electrode having a first beam irradiation surface and detecting ions of an ion beam irradiated onto the first beam irradiation surface, the first electrode having a plurality of apertures formed in a predetermined arrangement on the first beam irradiation surface; a plurality of second electrodes arranged downstream of the first electrode in the traveling direction of the ion beam and corresponding to each of the plurality of apertures, each of the plurality of second electrodes having a second beam irradiation surface, and detecting ions of the ion beam that pass through each of the plurality of apertures and are irradiated onto the second beam irradiation surface of each of the plurality of second electrodes; and a magnetic field generator configured to apply a first magnetic field that suppresses the inflow of electrons into the first electrode and the outflow of electrons from the first electrode, and a second magnetic field that suppresses the inflow of electrons into each of the plurality of second electrodes and the outflow of electrons from each of the plurality of second electrodes.

2. The ion implantation apparatus of claim 1, wherein the magnetic field generator is configured to generate a cusp magnetic field as the first magnetic field in a space adjacent to the first beam irradiation surface upstream of the first electrode in the traveling direction, and the cusp magnetic field has magnetic poles between adjacent apertures of the plurality of apertures when viewed in the traveling direction.

3. An ion implantation apparatus as described in claim 1 or 2, wherein each second electrode is a cup-shaped electrode, and the magnetic field generator is configured to generate, as the second magnetic field, a magnetic field that crosses a space surrounded by the cup-shaped electrodes.

4. The ion implantation apparatus of claim 1, wherein said plurality of apertures of said first electrode and said plurality of second electrodes are both arranged in a first direction perpendicular to said direction of travel.

5. The ion implantation apparatus of claim 4, wherein the magnetic field generator comprises: a plurality of first permanent magnets arranged in the first direction such that, when viewed in the direction of travel, each of the plurality of apertures is positioned between two first permanent magnets, and generate the first magnetic field; and a plurality of second permanent magnets arranged in the first direction such that, when viewed in the direction of travel, each of the plurality of second electrodes is positioned between two second permanent magnets, and generate the second magnetic field.

6. The ion implantation apparatus according to claim 5, wherein the two first permanent magnets are arranged so that different magnetic poles face the first electrode, and the two second permanent magnets are arranged so that different magnetic poles face the first electrode.

7. The ion implantation apparatus according to claim 5, wherein the two first permanent magnets are arranged so that different magnetic poles face the first electrode, and the two second permanent magnets are arranged so that different magnetic poles face each other.

8. An ion implantation device as described in claim 5, wherein the orientation of the magnetic poles of the second permanent magnet is determined so that the first permanent magnet and the second permanent magnet mutually strengthen their magnetic fields in a space adjacent to the first beam irradiation surface upstream of the first electrode in the traveling direction.

9. The ion implanter of claim 5, wherein said magnetic field generator comprises a yoke connecting said first plurality of permanent magnets and said second plurality of permanent magnets.

10. The ion implantation device described in claim 9, wherein the yoke is disposed downstream of the first electrode in the traveling direction and has a yoke front surface facing the first electrode and a yoke back surface facing the opposite side to the first electrode, the plurality of first permanent magnets are disposed on the yoke front surface, and the plurality of second permanent magnets are disposed on the yoke back surface.

11. The ion implantation apparatus of claim 4, wherein each of the plurality of apertures has an aperture width in the first direction and an aperture length in a second direction perpendicular to the direction of propagation of the ion beam and the first direction, the aperture length being longer than the aperture width.

12. The ion implantation apparatus of claim 4, wherein a dimension of said ion beam in said first direction is smaller than a dimension of said first electrode in said first direction and larger than a dimension of each of said plurality of apertures in said first direction.

13. An ion implantation apparatus according to any one of claims 4 to 12, further comprising a beam scanner arranged upstream of the first electrode in the direction of travel of the ion beam, and capable of scanning the ion beam in the first direction by applying at least one of an electric field and a magnetic field to the ion beam.

14. The ion implantation apparatus according to claim 1, wherein the beam current measuring device comprises: a first current detector electrically connected to the first electrode and detecting ions of the ion beam irradiated onto the first beam irradiation surface as a first ion beam current; and a second current detector electrically connected to each of the plurality of second electrodes and detecting ions of the ion beam irradiated onto the second beam irradiation surface as a second ion beam current.

15. A beam current measuring device comprising: a first electrode having a first beam irradiation surface and detecting ions of an ion beam irradiated onto the first beam irradiation surface, the first electrode having a plurality of apertures formed in a predetermined arrangement on the first beam irradiation surface; a plurality of second electrodes arranged downstream of the first electrode in the traveling direction of the ion beam and corresponding to each of the plurality of apertures, each of the plurality of second electrodes having a second beam irradiation surface, and detecting ions of the ion beam that pass through each of the plurality of apertures and are irradiated onto the second beam irradiation surface of each of the plurality of second electrodes; and a magnetic field generator configured to apply a first magnetic field that suppresses the inflow of electrons into the first electrode and the outflow of electrons from the first electrode, and a second magnetic field that suppresses the inflow of electrons into each of the plurality of second electrodes and the outflow of electrons from each of the plurality of second electrodes.

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