Processing method and processing system

Abstract

A processing method for mounting a plurality of dies on a target substrate, the method comprising: preparing a die assembly in which a plurality of divided dies are supported by a support material; and disposing the die assembly on a carrier on the opposite side to the support material, wherein the shape of a body portion of the carrier is the same as the shape of the target substrate.

Description

Processing method and processing system

[0001] The present disclosure relates to a processing method and a processing system.

[0002] Patent Document 1 discloses a wafer processing method for dividing a wafer into individual devices. This processing method includes the steps of: placing a protective member on the front surface of the wafer; holding the protective member side of the wafer on a chuck table and positioning a cutting blade from the back surface of the wafer in an area corresponding to the intended dividing line, forming cutting grooves on the back surface of the wafer, and dividing the wafer into individual devices; and placing the wafer in an opening of a frame having an opening for accommodating the wafer, adhering dicing tape to the back surface of the wafer and the frame, and peeling the protective member from the front surface of the wafer.

[0003] Japanese Patent Application Laid-Open No. 2020-009791

[0004] The technology disclosed herein uses a carrier that holds multiple dies to efficiently mount the multiple dies on a target substrate.

[0005] One aspect of the present disclosure is a processing method for mounting multiple dies on a target substrate, the processing method including: preparing a die assembly in which multiple divided dies are supported on a support; and disposing the die assembly on a carrier on an opposite side of the support, wherein the shape of a main body portion of the carrier is the same as the shape of the target substrate.

[0006] According to the present disclosure, a carrier that holds multiple dies can be used to efficiently mount the multiple dies on a target substrate.

[0007] FIG. 1 is a plan view showing an outline of the configuration of a wafer on which a plurality of types of dies are mounted. FIG. 2 is a cross-sectional view showing an outline of the configuration of a first carrier that holds a first die. FIG. 3 is a cross-sectional view showing an outline of the configuration of a first carrier that holds a first die. FIG. 4 is a cross-sectional view showing an outline of the configuration of a second carrier that holds a second die. FIG. 5 is a cross-sectional view showing an outline of the configuration of a second carrier that holds a second die. FIG. 6 is a plan view showing an outline of the configuration of a processing system. FIG. 7 is a flow diagram showing main steps of processing in a preparation processing system. FIG. 8 is an explanatory diagram schematically showing some steps of processing in the preparation processing system. FIG. 9 is a cross-sectional view showing an outline of the configuration of a mounting device. FIG. 10 is an explanatory diagram showing how a first die is electrostatically attracted to a first carrier. FIG. 11 is a cross-sectional view showing an outline of the configuration of a peeling device. FIG. 12 is a flow diagram showing main steps of processing in a mounting processing system. FIG. 13 is an explanatory diagram schematically showing some steps of processing in a mounting processing system. FIG. 14 is a cross-sectional view showing an outline of the configuration of a mounting device according to another embodiment. FIG. 15 is a cross-sectional view showing an outline of the configuration of a mounting device according to another embodiment. FIG. 16 is an explanatory diagram schematically showing some steps of processing in a preparation processing system according to another embodiment. 10A and 10B are explanatory diagrams illustrating a part of the process steps in the preparation process system according to another embodiment, and an explanatory diagram illustrating a part of the process steps in the mounting process system according to another embodiment.

[0008] In recent years, in the manufacturing process of semiconductor devices, in response to demands for even higher performance and higher density of devices, a chip-on-wafer (CoW) manufacturing process has been studied as one method of three-dimensional packaging technology. Chip-on-wafer manufacturing is carried out by a method disclosed in Patent Document 1, for example.

[0009] In a chip-on-wafer manufacturing process (hereinafter referred to as a "die-on-wafer manufacturing process"), a series of processes, including surface activation and hydrophilization, are required before semiconductor chips (hereinafter referred to as "dies") are mounted on a semiconductor substrate (hereinafter referred to as a "wafer"). These die processes are performed, for example, while the die is placed on a dicing tape fixed to a dicing frame. The dicing tape with the die placed thereon is prepared, for example, by a processing method disclosed in Patent Document 1. However, if the series of processes are performed in this state, the dicing tape with the die placed thereon may be damaged, making the dicing tape unreusable.

[0010] Therefore, the inventors have conducted extensive research and found that, instead of performing the above series of processes on dies on dicing tape in the die-on-wafer manufacturing process, the above series of processes can be performed while the dies are held by a carrier having approximately the same shape as the wafer, which can prevent damage to the carrier that would otherwise be caused to the dicing tape.

[0011] However, when using the carrier, multiple dies arranged on a dicing tape are transferred one by one to the carrier, and then the above series of processes are performed while the dies are held by the carrier. In this case, transferring the dies from the dicing tape to the carrier takes time, which reduces the throughput of the die-on wafer manufacturing process. Therefore, there is room for improvement in the conventional die-on wafer manufacturing process.

[0012] The technology disclosed herein uses a carrier that holds multiple dies to efficiently mount the multiple dies on a target substrate. Hereinafter, a processing system and a processing method according to the present embodiment will be described with reference to the drawings. Note that in this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0013] In this embodiment, as shown in Fig. 1, multiple types of dies D1 and D2 are mounted on a wafer W as a target substrate. Specifically, first, a first carrier C1 is prepared to hold multiple first dies D1 as shown in Fig. 2 and Fig. 3, and a second carrier C2 is prepared to hold multiple second dies D2 as shown in Fig. 4 and Fig. 5. Next, the multiple first dies D1 held by the first carrier C1 and the multiple second dies D2 held by the second carrier C2 are bonded to the wafer W as a target substrate.

[0014] 1, the wafer W on which the first die D1 and the second die D2 are mounted is a semiconductor wafer such as a silicon substrate or a glass substrate used in the manufacturing process of semiconductor devices. For example, the diameter of the wafer W is 300 mm and the thickness is approximately 800 μm. The surface of the wafer W on which the first die D1 and the second die D2 are mounted is referred to as the front surface Wa, and the surface opposite to the front surface Wa is referred to as the back surface Wb.

[0015] The number and arrangement of the first die D1 and the second die D2 to be mounted on the front surface Wa of the wafer W are set to a desired pattern. A device layer (not shown) may be formed on the front surface Wa. This device layer is formed to correspond to a device layer E of the first die D1, which will be described later.

[0016] 2 and 3, the first carrier C1 holds a plurality of first dies D1. The first die D1 has a configuration in which, for example, a silicon layer S1 and a device layer E are stacked. A circuit is formed in the device layer E. As will be described later, when the first die D1 is bonded to the wafer W, high bonding accuracy is required for the first die D1, i.e., the first die D1 is a high-precision die. Note that the surface of the first die D1 on which the device layer E is formed is referred to as the front surface D1a, and the surface opposite to the front surface D1a is referred to as the back surface D1b.

[0017] The multiple first dies D1 are formed by dividing and thinning a first die wafer G1, which serves as a die substrate, as described below. The first die wafer G1 has a configuration in which a pre-divided and pre-thinned silicon layer S1 and a pre-divided device layer E are stacked. The first die wafer G1 has approximately the same diameter as the main body M1 of the first carrier C1, which will be described later, and is, for example, 300 mm in diameter. The surface of the first die wafer G1 on which the device layer E is formed is referred to as the front surface G1a, and the surface opposite to the front surface G1a is referred to as the back surface G1b.

[0018] 4 and 5, the second carrier C2 holds a plurality of second dies D2. Each second die D2 has a structure in which, for example, a silicon layer S2 and an oxide film F are stacked. No devices such as circuits are formed on the oxide film F. As will be described later, when the second die D2 is bonded to the wafer W, low bonding accuracy is required for the second die D2; that is, the second die D2 is a low-precision die. The surface of the second die D2 on which the oxide film F is formed is referred to as the front surface D2a, and the surface opposite to the front surface D2a is referred to as the back surface D2b.

[0019] The multiple second dies D2 are formed by dividing and thinning a second die wafer G2 serving as a die substrate, as described below. The second die wafer G2 has a configuration in which a pre-divided and pre-thinned silicon layer S2 and a pre-divided oxide film F are stacked. The second die wafer G2 has approximately the same diameter as the main body M2 of the second carrier C2, described below, and is, for example, 300 mm in diameter. The surface of the second die wafer G2 on which the oxide film F is formed is referred to as the front surface G2a, and the surface opposite to the front surface G2a is referred to as the back surface G2b.

[0020] As described above, the first die D1 and the second die D2 are different types of dies. The first die D1 has a circuit formed thereon, whereas the second die D2 does not. Therefore, the joining accuracy required for the first die D1 is relatively high, while the joining accuracy required for the second die D2 is relatively low. In addition, the shapes (size and thickness) of the first die D1 and the second die D2 are also different. Therefore, the number of first dies D1 held by the first carrier C1 and the number of second dies D1 held by the second carrier C2 are also different.

[0021] The first carrier C1 and the second carrier C2 have the same configuration. First, the configuration of the first carrier C1 will be described.

[0022] As shown in Figures 2 and 3, the first carrier C1 has an adsorption surface on its surface for electrostatically and vacuum-adsorbing and holding multiple first dies D1. The first carrier C1 adsorbs and holds the silicon layer S1 on the back surface D1b of the first die D1. The first carrier C1 has a structure in which a main body M1 and an insulating layer N1 are stacked. Note that the surface of the first carrier C1 on which the insulating layer N1 is formed is referred to as the front surface C1a, and the surface opposite the front surface C1a is referred to as the back surface C1b. Furthermore, the main body M1 does not have an electrode portion (electrode wiring pattern) for electrostatically adsorbing the first die D1.

[0023] The main body M1 has approximately the same diameter and thickness as the wafer W on which the first die D1 is mounted, e.g., a diameter of 300 mm and a thickness of approximately 800 μm. The main body M1 is made of any conductive material, such as silicon, aluminum, an aluminum alloy, stainless steel, alumina, zirconia, SiC, or titanium. In other words, a silicon substrate may be used as the main body M1. The main body M1 may have approximately the same diameter as the wafer W on which the first die D1 is mounted, but may have a different thickness (e.g., 500 μm to 1000 μm) from the wafer.

[0024] The main body M1 has a plurality of through holes H1 formed therethrough in the thickness direction. The through holes H1 can be formed at any position on the suction surface of the first carrier C1. For example, the through holes H1 may be formed one for each of the first dies D1 held by the first carrier C1, in other words, the same number as the number of first dies D1 held by the first carrier C1. Alternatively, for example, the through holes H1 may be formed in a number corresponding to each of the first dies D1 held by the first carrier C1, in other words, a number greater than the number of first dies D1 held by the first carrier C1.

[0025] Although the number, size, spacing, and arrangement of the through holes H1 are not particularly limited, it is desirable to determine the number, size, and spacing so as to ensure the strength (rigidity) of the first carrier C1 so that deformation such as bending does not occur. For example, the diameter of the through holes H1 is 0.5 mm to 5.0 mm, and the spacing (the center-to-center distance between adjacent through holes H1) is 0.5 mm to 5.0 mm.

[0026] The insulating layer N1 is formed on the surface of the main body M1 and constitutes the adsorption surface of the first die D1 on the first carrier C1. The insulating layer N1 has no through-holes and covers the surface of the main body M1. The insulating layer N1 has a thickness of, for example, several tens of μm, which is sufficient to hold the first die D1 on the first carrier C1 by electrostatic adsorption.

[0027] The insulating layer N1 is made of a flexible and insulating material, such as polyimide or EVA (ethylene-vinyl acetate copolymer). In this embodiment, "the insulating layer N1 is flexible" means that the insulating layer N1 on the main body M1 has an elastic modulus of 2 GPa or less, preferably 0.5 GPa or less. In this embodiment, "the insulating layer N1 has insulating properties" means that the insulating layer N1 on the main body M1 has a breakdown voltage of 30 kV or more, preferably 40 kV or more.

[0028] As shown in Figures 4 and 5, the second carrier C2 has a similar configuration to the first carrier C1, i.e., a stack of a main body M2 and an insulating layer N2. The surface of the second carrier C2 on which the insulating layer N2 is formed is referred to as the front surface C2a, and the surface opposite the front surface C2a is referred to as the back surface C2b. The configurations of the main body M2 and the insulating layer N2 are similar to those of the main body M1 and the insulating layer N1, respectively. The main body M2 has a plurality of through holes H2 formed therethrough in the thickness direction. Because the second die D2 held by the second carrier C2 is a different type from the first die D1, the number, size, spacing, and arrangement of the through holes H2 may be different from those of the through holes H1 of the first carrier C1.

[0029] Next, the processing system 1 according to this embodiment will be described. FIG. 6 is a plan view showing the outline of the configuration of the processing system 1.

[0030] 6 , the processing system 1 includes a preparation processing system 10 and a mounting processing system 20. In the preparation processing system 10, a first carrier C1 for holding a plurality of first dies D1 is prepared, and a second carrier C2 for holding a plurality of second dies D2 is prepared. In the mounting processing system 20, the plurality of first dies D1 held in the first carrier C1 prepared in the preparation processing system 10 and the plurality of second dies D2 held in the second carrier C2 prepared in the preparation processing system 10 are mounted onto a wafer W.

[0031] The preparation processing system 10 has a configuration in which a carry-in / out station 30 and a processing station 31 are integrally connected. In the carry-in / out station 30, for example, FOUPs Fg1, Fg2, Fc1, and Fc2, each capable of accommodating a plurality of first die wafers G1, a plurality of second die wafers G2, a plurality of first carriers C1, and a plurality of second carriers C2, are carried in and out from the outside. The processing station 31 is equipped with various processing devices for implementing a series of processes described below.

[0032] The loading / unloading station 30 is provided with a FOUP mounting table 40. In the illustrated example, a plurality of FOUPs, for example, one each of Fg1, Fg2, Fc1, and Fc2, are mounted on the FOUP mounting table 40, aligned in a line in the Y-axis direction. Note that the number and arrangement of FOUPs Fg1, Fg2, Fc1, and Fc2 mounted on the FOUP mounting table 40 are not limited to those in this embodiment and can be determined arbitrarily.

[0033] A transfer device 50 is provided adjacent to the FOUP mounting table 40 on the positive side of the X-axis. The transfer device 50 is configured to be movable on a transfer path 51 extending in the Y-axis direction. The transfer device 50 also has, for example, two transfer arms 52, 52 that hold and transfer the first die forming wafer G1, the second die forming wafer G2, the first carrier C1, and the second carrier C2. Each transfer arm 52 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis. Note that the configuration of the transfer arms 52 is not limited to this embodiment and may have any configuration. The transfer device 50 is configured to be able to transfer the first die forming wafer G1, the second die forming wafer G2, the first carrier C1, and the second carrier C2 to and from the FOUPs Fg1, Fg2, Fc1, and Fc2 on the FOUP mounting table 40, a transition device 70 (described later), and a buffer device 71 (described later).

[0034] The processing station 31 is provided with a transport device 60, a transition device 70, a buffer device 71, a dicing device 80, a bonding device 81, a grinding device 82, a polishing device 83, a cleaning device 84, a mounting device 85, and a peeling device 86. The number and arrangement of these various processing devices are not limited to those in this embodiment, and can be determined as desired.

[0035] The transfer device 60 is configured to be movable on a transfer path 61 extending in the X-axis direction. The transfer device 60 also has, for example, two transfer arms 62, 62 that hold and transfer the first die formation wafer G1, the second die formation wafer G2, the first carrier C1, and the second carrier C2. Each transfer arm 62 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis, and is configured to be able to transfer the first die formation wafer G1, the second die formation wafer G2, the first carrier C1, and the second carrier C2 to each of the devices 70, 71, 80-86 in the processing station 31.

[0036] The transition device 70 and the buffer device 71 are disposed on the negative side of the X-axis of the transport device 60. The transition device 70 and the buffer device 71 are stacked in this order vertically from the top. Note that a plurality of buffer devices 71 may be stacked.

[0037] The transition device 70 transfers the first die wafer G1, the second die wafer G2, the first carrier C1, and the second carrier C2 between the transfer device 50 and the transfer device 60. The buffer device 71 temporarily stores the first die wafer G1, the second die wafer G2, the first carrier C1, and the second carrier C2.

[0038] The dicing device 80, bonding device 81, grinding device 82, and polishing device 83 are arranged in this order from the negative side to the positive side of the X axis on the positive side of the Y axis of the transport device 50. The cleaning device 84, mounting device 85, and peeling device 86 are arranged in this order from the negative side to the positive side of the X axis on the negative side of the Y axis of the transport device 50.

[0039] The dicing device 80 dices the die forming wafers G1, G2 using plasma. In the dicing device 80, for example, under a reduced pressure atmosphere, a process gas is excited into plasma and ionized. The ions are irradiated onto the surfaces G1a, G2a of the die forming wafers G1, G2, etching the surfaces G1a, G2a. As a result, grooves L for dividing the die forming wafers G1, G2 are formed on the surfaces G1a, G2a. These grooves L are lines (planned dividing lines) along which the die forming wafers G1, G2 are divided, and are also referred to as scribe lines. As will be described later, the grooves L are formed from the surfaces G1a, G2a of the die forming wafers G1, G2 to partway along the thickness direction.

[0040] The bonding device 81 bonds support tape P as a support material to the surfaces G1a and G2a of the die wafers G1 and G2. For example, BG tape (backgrind tape) is used as the support tape P. The support tape P is made of any conductive material.

[0041] The grinding device 82 grinds the back surfaces G1b and G2b of the die forming wafers G1 and G2, each having a support tape P attached to its front surface G1a and G2a. This thins the die forming wafers G1 and G2. As described below, grinding the back surfaces G1b and G2b of the die forming wafers G1 and G2 creates grooves L penetrating the wafers G1 and G2 in the thickness direction, thereby singulating the die forming wafers G1 and G2 into a plurality of dies D1 and D2. Hereinafter, the plurality of first dies D1 supported on the support tape P will be referred to as a first die assembly K1, and the plurality of second dies D2 supported on the support tape P will be referred to as a second die assembly K2. Note that, in the die assemblies K1 and K2, the surfaces facing the support tape P will be referred to as the front surfaces K1a and K2a, and the surfaces opposite the front surfaces K1a and K2a will be referred to as the back surfaces K1b and K2b.

[0042] The polishing device 83 polishes the back surfaces K1b and K2b of the die assemblies K1 and K2 ground by the grinding device 82.

[0043] The cleaning device 84 cleans the back surfaces K1b and K2b of the die assemblies K1 and K2 polished by the polishing device 83. In the cleaning device 84, a cleaning liquid, for example, DI water, is supplied onto the die assemblies K1 and K2 from a two-fluid nozzle while rotating the wafer W held by, for example, a spin chuck. The supplied cleaning liquid then spreads over the back surfaces of the die assemblies K1 and K2, cleaning the back surfaces.

[0044] The mount device 85 places the die assemblies K1 and K2 on the carriers C1 and C2 with their rear surfaces K1b and K2b facing inward. The mount device 85 attracts and holds the dies D1 and D2 on the attracting surface by, for example, generating electrostatic (Coulomb) force between the carriers C1 and C2 and the dies D1 and D2. The configuration of the mount device 85 will be described in detail later.

[0045] The peeling device 86 peels off the support tape P attached to the surfaces K1a and K2a of the die assemblies K1 and K2 held by the carriers C1 and C2. The peeling device 86 irradiates the support tape P with ultraviolet light, for example, and then peels off the support tape P. The configuration of the peeling device 86 will be described in detail later.

[0046] Although the preparatory processing system 10 according to this embodiment is configured as described above, other processing devices may be further disposed in the preparatory processing system 10 depending on the purpose, and some processing devices may be disposed outside the preparatory processing system 10 depending on the purpose. For example, the dicing device 80 performs processing under a reduced pressure, and may be disposed outside the preparatory processing system 10. Furthermore, for example, the mounting device 85 and the peeling device 86 may be disposed in separate systems outside the preparatory processing system 10. Furthermore, for example, the mounting device 85 and the peeling device 86 may be provided as an integrated device rather than as separate devices.

[0047] The mounting processing system 20 has a configuration in which a carry-in / out station 90 and a processing station 91 are integrally connected. In the carry-in / out station 90, for example, FOUPs Fw, Fc1, and Fc2, each capable of accommodating a plurality of wafers W, a plurality of first carriers C1, and a plurality of second carriers C2, are respectively carried in and out between the outside and the system. The processing station 91 is equipped with various processing devices for implementing a series of processes described below.

[0048] The loading / unloading station 90 is provided with a FOUP mounting table 100. In the illustrated example, a plurality of FOUPs, for example, two FOUPs Fw, one FOUP Fc1, and one FOUP Fc2, are placed on the FOUP mounting table 100, lined up in the Y-axis direction. Note that the number and arrangement of the FOUPs Fw, Fc1, and Fc2 placed on the FOUP mounting table 100 are not limited to those in this embodiment and can be determined arbitrarily.

[0049] A transfer device 110 is provided adjacent to the FOUP mounting table 100 on the positive side of the X-axis. The transfer device 110 is configured to be movable on a transfer path 111 extending in the Y-axis direction. The transfer device 110 also has, for example, two transfer arms 112, 112 that hold and transfer wafers W, first carriers C1, and second carriers C2. Each transfer arm 112 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis. Note that the configuration of the transfer arms 112 is not limited to this embodiment and may have any configuration. The transfer device 110 is configured to transfer wafers W, first carriers C1, and second carriers C2 to and from the FOUPs Fw, Fc1, and Fc2 on the FOUP mounting table 100, a transition device 130 (described later), and a buffer device 131 (described later).

[0050] The processing station 91 is provided with, for example, three processing blocks 92 to 94. The first processing block 92, the second processing block 93, and the third processing block 94 are arranged in this order from the negative side to the positive side of the X axis.

[0051] The first processing block 92 is provided with a transfer device 120, a transition device 130, a buffer device 131, an inspection device 140, a wafer surface modification device 141 as a substrate surface device, a die surface modification device 142, a wafer surface cleaning device 143 as a substrate surface cleaning device, a die surface cleaning device 144, a wafer surface hydrophilization device 145 as a substrate surface hydrophilization device, and a die surface hydrophilization device 146. The number and arrangement of these various processing devices are not limited to those in this embodiment and can be determined as desired.

[0052] The transfer device 120 is configured to be movable on a transfer path 121 extending in the X-axis direction. The transfer device 120 also has, for example, two transfer arms 122, 122 that hold and transfer the wafer W, the first carrier C1, and the second carrier C2. Each transfer arm 122 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis, and is configured to be able to transfer the wafer W, the first carrier C1, and the second carrier C2 to each of the devices 130, 131, 140 to 146 in the first processing block 92, a transition device 160 described later, and a buffer device 161 described later.

[0053] The transition device 130 and the buffer device 131 are disposed on the negative side of the X-axis of the transport device 120. The transition device 130 and the buffer device 131 are stacked in this order vertically from the top. Note that a plurality of buffer devices 131 may be stacked.

[0054] The transition device 130 transfers the wafers W, the first carrier C1, and the second carrier C2 between the transfer device 110 and the transfer device 120. The buffer device 131 temporarily stores the wafers W, the first carrier C1, and the second carrier C2.

[0055] The inspection device 140, wafer surface modification device 141, and die surface modification device 142 are arranged on the positive side of the Y axis of the transfer device 120. The inspection device 140, wafer surface modification device 141, and die surface modification device 142 are stacked vertically in this order from the top. The wafer surface modification device 141 and die surface modification device 142 are arranged side by side in this order from the negative side to the positive side of the X axis.

[0056] The inspection device 140 inspects a wafer W on which a first die D1 and a second die D2 are mounted. The inspection device 140, for example, takes an image of the wafer W and inspects for the presence or absence of voids between the surface Wa of the wafer W and the dies D1 and D2. The inspection device 140 may also inspect the positions of the dies D1 and D2 bonded to the surface Wa of the wafer W.

[0057] The wafer surface modification device 141 uses plasma to modify the surface Wa of the wafer W. In the wafer surface modification device 141, for example, under a reduced pressure atmosphere, oxygen gas or nitrogen gas serving as a processing gas is excited to be turned into plasma and ionized. The oxygen ions or nitrogen ions are irradiated onto the surface Wa of the wafer W, and the surface Wa is subjected to plasma processing and modified.

[0058] Like the wafer surface modification device 141, the die surface modification device 142 also uses plasma to modify the surfaces D1a and D2a of the dies D1 and D2. In the die surface modification device 142, for example, under a reduced pressure atmosphere, oxygen gas or nitrogen gas serving as a processing gas is excited to be turned into plasma and ionized. The oxygen ions or nitrogen ions are irradiated onto the surfaces D1a and D2a of the dies D1 and D2 held by the carriers C1 and C2, and the surfaces D1a and D2a are plasma-processed and modified.

[0059] The wafer surface cleaning device 143, die surface cleaning device 144, wafer surface hydrophilization device 145, and die surface hydrophilization device 146 are arranged on the negative side of the Y axis of the transfer device 120. The wafer surface cleaning device 143 and die surface cleaning device 144, and the wafer surface hydrophilization device 145 and die surface hydrophilization device 146 are stacked vertically from the top in this order. The wafer surface cleaning device 143 and die surface cleaning device 144 are arranged side by side in this order from the negative side to the positive side of the X axis. The wafer surface hydrophilization device 145 and die surface hydrophilization device 146 are arranged side by side in this order from the negative side to the positive side of the X axis.

[0060] The wafer surface cleaning device 143 cleans the surface Wa of the wafer W. In the wafer surface cleaning device 143, while the wafer W held by, for example, a spin chuck is rotated, a cleaning liquid such as pure water, DI water, DHF, or IPA is supplied onto the wafer W. The supplied cleaning liquid then spreads over the surface Wa of the wafer W, cleaning the surface Wa.

[0061] The die surface cleaning device 144 also cleans the surfaces D1a and D2a of the dies D1 and D2, similarly to the wafer surface cleaning device 143. In the die surface cleaning device 144, a cleaning liquid is supplied onto the dies D1 and D2 held by the carriers C1 and C2 while the carriers C1 and C2 held by the chucks are rotated. The supplied cleaning liquid then spreads over the surfaces D1a and D2a of the dies D1 and D2, cleaning the surfaces D1a and D2a.

[0062] The wafer surface hydrophilization device 145 hydrophilizes and rinses the surface Wa of the wafer W. In the wafer surface hydrophilization device 145, pure water is supplied onto the wafer W while the wafer W held by, for example, a spin chuck is being rotated. The supplied pure water then spreads over the surface Wa of the wafer W, hydrophilizing the surface Wa. The surface Wa is also rinsed with the pure water.

[0063] Like the wafer surface hydrophilization device 145, the die surface hydrophilization device 146 hydrophilizes and rinses the surfaces D1a and D2a of the dies D1 and D2. In the die surface hydrophilization device 146, a cleaning solution is supplied onto the dies D1 and D2 held by the carriers C1 and C2 while the carriers C1 and C2 held by, for example, spin chucks are rotated. The supplied cleaning solution then spreads over the surfaces D1a and D2a of the dies D1 and D2, hydrophilizing the surfaces D1a and D2a. The surfaces D1a and D2a are also rinsed with pure water.

[0064] The second processing block 93 is provided with a transport device 150, a transition device 160, a buffer device 161, and a first bonding device 170. The number and arrangement of these various processing devices are not limited to those in this embodiment, and can be determined arbitrarily.

[0065] The transfer device 150 is configured to be movable on a transfer path 151 extending in the X-axis direction. The transfer device 150 also has, for example, two transfer arms 152, 152 that hold and transfer the wafer W, the first carrier C1, and the second carrier C2. Each transfer arm 152 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis, and is configured to be able to transfer the wafer W, the first carrier C1, and the second carrier C2 to each of the devices 160, 161, 170 in the second processing block 93, a transition device 190 described later, and a buffer device 191 described later.

[0066] The transition device 160 and the buffer device 161 are disposed on the negative side of the X-axis of the transport device 150. The transition device 160 and the buffer device 161 are stacked in this order in the vertical direction from the top. Note that a plurality of buffer devices 161 may be stacked.

[0067] The transition device 160 transfers the wafers W, the first carrier C1, and the second carrier C2 between the transfer device 120 and the transfer device 150. The buffer device 161 temporarily stores the wafers W, the first carrier C1, and the second carrier C2.

[0068] For example, two first bonding devices 170 are arranged in the positive direction of the Y axis of the transfer device 150, and two are arranged in the negative direction of the Y axis of the transfer device 150. The first bonding devices 170 bond the first die D1 (high-precision die) held by the first carrier C1 to the wafer W. That is, high bonding precision is required of the first bonding devices 170 (hereinafter, such a bonding device may be referred to as a "high-precision bonding device").

[0069] In the first bonding device 170, air is supplied to the through-hole H1 of the first carrier C1 held by the carrier holding part to detach the first die D1 from the suction surface of the first carrier C1, and then the first die D1 on the first carrier C1 is picked up by a collet. Next, the first die D1 is transferred from the collet to the bond head, and the bond head is lowered to press and bond the first die D1 against the wafer W held by the wafer holding part.

[0070] The third processing block 94 is provided with a transport device 180, a transition device 190, a buffer device 191, and a second bonding device 200. The number and arrangement of these various processing devices are not limited to this embodiment and can be determined arbitrarily.

[0071] The transfer device 180 is configured to be movable on a transfer path 181 extending in the X-axis direction. The transfer device 180 also has, for example, two transfer arms 182, 182 that hold and transfer the wafer W and the second carrier C2. Each transfer arm 182 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis, and is configured to be able to transfer the wafer W and the second carrier C2 to each of the devices 190, 191, and 200 in the third processing block 94.

[0072] The transition device 190 and the buffer device 191 are disposed on the negative side of the X-axis of the transport device 180. The transition device 190 and the buffer device 191 are stacked in this order vertically from the top. Note that a plurality of buffer devices 191 may be stacked.

[0073] The transition device 190 transfers the wafers W and the second carrier C2 between the transfer device 150 and the transfer device 180. The buffer device 191 temporarily stores the wafers W, the first carrier C1, and the second carrier C2.

[0074] For example, two second bonding devices 200 are arranged in the positive direction of the Y axis of the transfer device 180, and two are arranged in the negative direction of the Y axis of the transfer device 180. The second bonding devices 200 bond the second die D2 (low-precision die) held by the second carrier C2 to the wafer W. In other words, the bonding precision required of the second bonding devices 200 is low (hereinafter, such a bonding device may be referred to as a "low-precision bonding device").

[0075] In the second bonding apparatus 200, air is supplied to the through-hole H2 of the second carrier C2 held by the carrier holder to detach the second die D2 from the suction surface of the second carrier C2, and then the second die D2 on the second carrier C2 is picked up by a collet. Next, the second die D2 is transferred from the collet to the bond head, and the bond head is lowered to press and bond the second die D2 against the wafer W held by the wafer holder.

[0076] The first bonding apparatus 170, which is a high-precision bonding apparatus, and the second bonding apparatus 200, which is a low-precision bonding apparatus, have different precision specifications for their apparatus configurations and different bonding condition specifications. The apparatus configurations with different precision specifications are, for example, various movement mechanisms and alignment mechanisms (position adjustment mechanisms), with the first bonding apparatus 170 having high precision and the second bonding apparatus 200 having low precision. The bonding conditions with different specifications are conditions for bonding the dies D1 and D2 to the wafer W, and are apparatus parameters. The apparatus parameters include, for example, the acceleration / deceleration and speed of the various movement mechanisms, and the waiting time until the drive of the drive units of the various movement mechanisms stabilizes. The apparatus parameters also include whether alignment (position adjustment) is required and the time required for alignment.

[0077] The mounting processing system 20 according to this embodiment is configured as described above, but other processing devices may be further disposed in the mounting processing system 20 depending on the purpose, and some processing devices may be disposed outside the mounting processing system 20 depending on the purpose. For example, the wafer surface modification device 141 and the die surface modification device 142 are processes performed in a reduced pressure atmosphere, and may be disposed outside the mounting processing system 20.

[0078] Furthermore, the preparatory processing system 10 and the mounting processing system 20 may be configured as an integrated unit, or some of the processing devices in the preparatory processing system 10 and some of the processing devices in the mounting processing system 20 may be configured as an integrated unit.

[0079] The above-described processing system 1 (preparation processing system 10 and implementation processing system 20) is provided with at least one control device 210. The control device 210 processes computer-executable instructions that cause the processing system 1 to perform the various processes described in this disclosure. The control device 210 may be configured to control each element of the processing system 1 to perform the various processes described herein. In one embodiment, some or all of the control device 210 may be included in the processing system 1. The control device 210 may include a processing unit, a storage unit, and a communication interface. The control device 210 is implemented, for example, by a computer. The processing unit may be configured to read from the storage unit a program that provides logic or routines that enable various control operations and execute the read program to perform various control operations. This program may be stored in the storage unit in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit and read from the storage unit by the processing unit for execution. The medium may be various computer-readable storage media or a communication line connected to the communication interface. The storage medium may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit) or one or more circuits. The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the processing system 1 via a communication line such as a LAN (Local Area Network).

[0080] Next, a description will be given of a die-on wafer manufacturing process carried out in the processing system 1 configured as above.

[0081] First, the processing in the preparation processing system 10 will be described. In the preparation processing system 10, a first carrier C1 holding a plurality of first dies D1 is prepared, and a second carrier C2 holding a plurality of second dies D2 is prepared. Since the preparation method for the first carrier C1 and the preparation method for the second carrier C2 are similar, the following explanation will focus on the preparation method for the first carrier C1. Figure 7 is a flow diagram showing the main steps of the processing in the preparation processing system 10. Figure 8 is an explanatory diagram schematically showing some steps of the processing in the preparation processing system 10.

[0082] First, FOUPs Fg1 and Fc1, each containing a plurality of first die wafers G1 and first carriers C1, are placed on the FOUP mounting table 40 of the carry-in / out station 30. At this time, as shown in FIG. 8( a), the first die wafer G1 is stored with its surface G1a facing upward. As described above, the first die wafer G1 has a structure in which the pre-separation and pre-thinning silicon layer S1 and the pre-separation device layer E are stacked. The first carrier C1 is also stored with its surface C1a facing upward.

[0083] Next, the transfer device 50 removes the first die wafer G1 from the FOUP Fg1 and transfers it to the transition device 70. The first die wafer G1 transferred to the transition device 70 is then transferred to the dicing device 80 by the transfer device 60. In the dicing device 80, plasma processing is performed, for example, under a reduced pressure atmosphere, and the first die wafer G1 is diced (St11 in FIG. 7 ). As a result, as shown in FIG. 8( b), the first die wafer G1 is etched, and grooves L for singulating the first die wafer G1 are formed in the front surface G1a. These grooves L divide the first die wafer G1 into multiple first dies D1. Note that in St11, the grooves L are formed from the front surface G1a of the first die wafer G1 to partway along the thickness direction, and do not reach the back surface G1b. Such control of the depth of the grooves L is possible because the dicing device 80 performs plasma processing.

[0084] The grooves L formed in the first die wafer G1 in St11 may penetrate the wafer in the thickness direction. In this case, after the support tape P is attached to the surface G1a of the first die wafer G1 in St12, which will be described later, the first die wafer G1 is diced in St11.

[0085] Next, the first die wafer G1 is transported by the transport device 60 to the bonding device 81. In the bonding device 81, a support tape P is attached to the front surface G1a of the first die wafer G1, as shown in FIG. 8C (St12 in FIG. 7).

[0086] Next, the first die wafer G1 is transported by the transport device 60 to the grinding device 82. At this time, the front and back surfaces of the first die wafer G1 are inverted so that the back surface G1b faces upward, as shown in FIG. 8(d). The inversion of the front and back surfaces of the first die wafer G1 may be performed by the transport device 60 or by an inverting device (not shown). In the grinding device 82, the back surface G1b of the first die wafer G1, to whose front surface G1a the support tape P is attached, is ground (St13 in FIG. 7). This thins the first die wafer G1. In addition, grooves L penetrate the first die wafer G1 in the thickness direction, dividing and singulating the first die wafer G1 into a plurality of first dies D1. In this way, a first die aggregate K1 (a plurality of first dies D1) supported by the support tape P is formed.

[0087] Next, the first die aggregate K1 is transported by the transport device 60 to the polishing device 83. In the polishing device 83, the back surface K1b of the first die aggregate K1 is polished (St14 in FIG. 7 ). As a result, the back surface K1b of the first die aggregate K1 is flattened.

[0088] Next, the first die aggregate K1 is transported by the transport device 60 to the cleaning device 84. In the cleaning device 84, the back surface K1b of the first die aggregate K1 is cleaned with, for example, a cleaning liquid (St15 in FIG. 7).

[0089] Next, the first die assembly K1 is transported by the transport device 60 to the mounting device 85. At this time, the first die assembly K1 is turned over, with the front surface K1a (support tape P) facing upward, as shown in FIG. 8( e). The turning over of the first die assembly K1 may be performed by the transport device 60 or by a turning device (not shown). In the mounting device 85, the first die assembly K1 is disposed with the back surface K1b side on the front surface C1a of the first carrier C1 (St16 in FIG. 7).

[0090] 9 , in the mounting device 85, the back surface C1b of the first carrier C1 is held by a lower chuck 300, and the support tape P on the front surface K1a side of the first die aggregate K1 is held by an upper chuck 301. The lower chuck 300 and the upper chuck 301 are, for example, electrostatic chucks, and electrostatically attract the first carrier C1 and the first die aggregate K1.

[0091] In this embodiment, the first carrier C1 is disposed on the lower side and the first die assembly K1 is disposed on the upper side, but the vertical arrangement of the first carrier C1 and the first die assembly K1 may be reversed, i.e., the first die assembly K1 may be disposed on the lower side and the first carrier C1 may be disposed on the upper side.

[0092] The lower chuck 300 is provided with a power supply unit 310. The power supply unit 310 has a power supply source 311 that supplies power to the first carrier C1 via the lower chuck 300, and a ground wire 312. The arrangement and configuration of the power supply unit 310 are not limited to those described above, and it is sufficient if the power supply unit 310 can apply an appropriate voltage to the first carrier C1.

[0093] The upper chuck 301 is provided with a charge eliminator 320. The charge eliminator 320 has a ground wire 321 connected to the upper chuck 301 and the first die assembly K1 via the support tape P. The arrangement and configuration of the charge eliminator 320 are not limited to this, and it is sufficient if the charge eliminator 320 can appropriately eliminate charge from the first die assembly K1.

[0094] When the first die assembly K1 is held by suction on the first carrier C1, the first die assembly K1 is first placed on the surface C1a of the first carrier C1 as shown in Fig. 10(a) . Next, a voltage (a positive (+) charge in the illustrated example) is applied to the first carrier C1 from the power supply source 311 of the power supply unit 310, and the main body M1 of the first carrier C1 is positively charged.

[0095] 10B, when the main body portion M1 is positively charged, charges of the opposite polarity (i.e., negative (-)) to the charges accumulated in the main body portion M1 are accumulated on the back surface K1b of the first die aggregate K1 across the insulating layer N1, and charges of the same polarity (i.e., positive (+)) as the charges accumulated in the main body portion M1 are accumulated on the front surface K1a of the first die aggregate K1.

[0096] Next, as shown in FIG. 10C, the charge removal unit 320 removes (earths) the positive charge on the surface K1a of the first die assembly K1, leaving behind negative charges that attract the positive charge on the main body M1.

[0097] Thereafter, a potential difference occurs between the main body M1 of the first carrier C1 and the first die aggregate K1 across the insulating layer N1, generating an electrostatic force that attracts them to each other, and the first die aggregate K1 is adsorbed to the adsorption surface of the first carrier C1 by the electrostatic force.

[0098] In this embodiment, the main body M1 of the first carrier C1 functions as a pseudo-unipolar electrode, and the first die assembly K1 can be attracted and held on the suction surface via the insulating layer N1 without forming an electrode wiring pattern inside the main body M1. That is, the insulating layer N1 serves to insulate the main body M1 from the electric charge applied thereto, thereby maintaining the electric charge accumulated in the main body M1.

[0099] In addition, in the first carrier C1 of this embodiment, the insulating layer N1 is formed of a flexible material with a small elastic modulus. After the first die assembly K1 is placed on the first carrier C1, a gap is formed between the first die assembly K1 and the insulating layer N1 before the first die assembly K1 is electrostatically attracted and held. Due to the flexibility of the insulating layer N1, when the first die assembly K1 is electrostatically attracted to the insulating layer N1, air escapes from between the first die assembly K1 and the insulating layer N1, creating a pseudo-vacuum state between the first die assembly K1 and the insulating layer N1. As a result, in addition to the electrostatic attraction between the first carrier C1 and the first die assembly K1, a vacuum attraction force formed by the pseudo-vacuum state is generated, and a strong holding state is formed using both the electrostatic attraction force and the vacuum attraction force.

[0100] The timing of applying a voltage to the main body M1 and the timing of de-electrifying the first die assembly K1 are not limited to the above examples. For example, a voltage may be applied to the main body M1 before the first die assembly K1 is placed on the suction surface (when the first die assembly K1 is not present on the first carrier C1). Alternatively, a voltage may be applied after the first die assembly K1 is placed on the suction surface (after the first die assembly K1 is placed on the first carrier C1) as shown in FIG. 10 . Alternatively, a voltage may be applied to the main body M1 simultaneously with the placement of the first die assembly K1 on the suction surface. The de-electrification of the first die assembly K1 on the first carrier C1 may be performed simultaneously with the application of a voltage after the first die assembly K1 is placed on the suction surface, or after the placement of the first die assembly K1 on the suction surface is completed and the voltage is applied to hold the first die assembly K1 by suction.

[0101] However, if a voltage is applied to the main body M1 when the first die assembly K1 is not placed on the suction surface, particles may be attracted to the suction surface by the generated electrostatic force and adhere to the suction surface. In view of this, it is preferable to apply a voltage to the main body M1 after the first die assembly K1 is placed on the suction surface or simultaneously with the placement of the first die assembly K1 on the suction surface. More preferably, it is desirable to apply a voltage to the main body M1 after all the first die assemblies K1 are placed on the first carrier C1.

[0102] Next, the first die assembly K1 is transported by the transport device 60 to the peeling device 86. In the peeling device 86, the support tape P attached to the surface K1a of the first die assembly K1 held by the first carrier C1 is peeled off, as shown in FIG. 8(f) (St17 in FIG. 7).

[0103] 11, in the peeling device 86, the back surface C1b of the first carrier C1 is held by a chuck 400. The method for holding the first carrier C1 by the chuck 400 is arbitrary.

[0104] An ultraviolet ray irradiation unit 410 is provided above the chuck 400. The ultraviolet ray irradiation unit 410 irradiates ultraviolet rays onto the support tape P attached to the surface K1a of the first die assembly K1 held by the chuck 400. The ultraviolet rays reduce the adhesion between the support tape P and the surface K1a of the first die assembly K1.

[0105] A peeling unit 420 is provided above the chuck 400. The peeling unit 420 supports, for example, the outer edge of the support tape P and can lift the outer edge of the support tape P diagonally upward using a moving mechanism (not shown). At this time, the ultraviolet rays irradiated from the ultraviolet irradiation unit 410 reduce the adhesion between the support tape P and the surface K1a of the first die assembly K1, so the support tape P can be easily peeled off from the surface K1a. Then, by further moving the peeling unit 420 diagonally upward, the support tape P is peeled off sequentially from one end to the other.

[0106] After steps St11 to St17 described above, the first carrier C1 holds a plurality of first dies D1. The first carrier C1 is then transported by the transport device 60 to the transition device 70, and then by the transport device 50 to the FOUP Fc1. This completes the series of processes in the preparation processing system 10.

[0107] The FOUP from which the first carrier C1 is retrieved does not necessarily have to be the same FOUP that housed the first carrier C1 when it was carried in. That is, for example, the FOUPs that housed the first die wafer G1 and the first carrier C1 may each carry out different members, or a new FOUP or the like for carrying out the first carrier C1 may be carried into the preparation processing system 10.

[0108] Furthermore, the above-described St11 to St17 are performed on the second die wafer G2 and the second carrier C2, and the second carrier C2 for holding a plurality of second dies D2 is prepared.

[0109] Next, the processing in the mounting processing system 20 will be described. In the mounting processing system 20, a plurality of first dies D1 held in a first carrier C1 prepared in the preparation processing system 10 and a plurality of second dies D2 held in a second carrier C2 prepared in the preparation processing system 10 are mounted on a wafer W. Fig. 12 is a flow chart showing main steps of the processing in the mounting processing system 20. Fig. 13 is an explanatory diagram schematically showing some steps of the processing in the mounting processing system 20.

[0110] First, FOUPs Fw, Fc1, and Fc2, each containing a plurality of wafers W, a first carrier C1, and a second carrier C2, are placed on a FOUP mounting table 100 in a carry-in / out station 90. At this time, a plurality of first dies D1 are held in the first carrier C1 as shown in FIG. 13( a), and a plurality of second dies D2 are held in the second carrier C2 as shown in FIG. 13( b). The first carrier C1 is stored with its surface C1a (first die D1) facing upward, and the second carrier C2 is stored with its surface C2a (second die D2) facing upward. As described above, the first die D1 is a high-precision die, and the second die D2 is a low-precision die.

[0111] Next, the transfer device 110 removes the wafer W from the FOUP Fw and transfers it to the transition device 130. The wafer W transferred to the transition device 130 is transferred by the transfer device 120 to the wafer front surface cleaning device 143. In the wafer front surface cleaning device 143, the front surface Wa of the wafer W is cleaned with, for example, a cleaning liquid (St21 in FIG. 12 ).

[0112] Next, the wafer W is transferred by the transfer device 120 to the wafer surface modification device 141. In the wafer surface modification device 141, a plasma process is performed, for example, under a reduced pressure atmosphere, to modify the surface Wa of the wafer W (St22 in FIG. 12).

[0113] Next, the wafer W is transferred by the transfer device 120 to the wafer surface hydrophilization device 145. In the wafer surface hydrophilization device 145, for example, pure water is used to attach hydroxyl groups (silanol groups) to the surface Wa of the wafer W modified in St22, thereby making the surface Wa hydrophilic. The surface Wa is also rinsed with the pure water (St23 in FIG. 12 ).

[0114] Next, the wafer W is transferred by the transfer device 120 to the transition device 160, and further transferred by the transfer device 150 to the first bonding device 170. Note that if the bonding process has already been performed in the four first bonding devices 170, the wafer W is transferred to the buffer device 161 and temporarily stored in the buffer device 161.

[0115] While the wafer W is being processed in the above-described steps St21 to St23, the first die D1 held in the first carrier C1 is processed. First, the transfer device 110 removes the first carrier C1 from the FOUP Fc1 and transfers it to the transition device 130. The first carrier C1 transferred to the transition device 130 is then transferred by the transfer device 120 to the die surface cleaning device 144. In the die surface cleaning device 144, the surface D1a of the first die D1 is cleaned with, for example, a cleaning liquid (St24 in FIG. 12 ).

[0116] Next, the first carrier C1 is transported by the transport device 120 to the die surface modification device 142. In the die surface modification device 142, for example, plasma processing is performed under a reduced pressure atmosphere, and the surface D1a of the first die D1 is modified (St25 in FIG. 12).

[0117] Next, the first carrier C1 is transported by the transport device 120 to the die surface hydrophilization device 146. In the die surface hydrophilization device 146, hydroxyl groups (silanol groups) are attached to the surface D1a of the first die D1 modified in St25 using, for example, pure water, thereby hydrophilizing the surface D1a. The surface D1a is also rinsed with the pure water (St26 in FIG. 12 ).

[0118] Next, the first carrier C1 is transported by the transport device 120 to the transition device 160, and further transported by the transport device 150 to the first joining device 170. Note that if the joining process has already been performed in the four first joining devices 170, the first carrier C1 is transported to the buffer device 161 and temporarily stored therein.

[0119] While the wafer W is subjected to the processes in St21 to St23 described above and the first die D1 is subjected to the processes in St24 to St26 described above, the second die D2 held in the second carrier C2 is processed. First, the transfer device 110 removes the second carrier C2 from the FOUP Fc2 and transfers it to the transition device 130. The second carrier C2 transferred to the transition device 130 is then transferred by the transfer device 120 to the die surface cleaning device 144. In the die surface cleaning device 144, the surface D2a of the second die D2 is cleaned with, for example, a cleaning liquid (St27 in FIG. 12 ).

[0120] Next, the second carrier C2 is transported by the transport device 120 to the die surface modification device 142. In the die surface modification device 142, for example, plasma processing is performed under a reduced pressure atmosphere, and the surface D2a of the second die D2 is modified (St28 in FIG. 12).

[0121] Next, the second carrier C2 is transported by the transport device 120 to the die surface hydrophilization device 146. In the die surface hydrophilization device 146, hydroxyl groups (silanol groups) are attached to the surface D2a of the second die D2 modified in St28 using, for example, pure water, thereby hydrophilizing the surface D2a. The surface D2a is also rinsed with the pure water (St29 in FIG. 12 ).

[0122] Next, the second carrier C2 is transported by the transport device 120 to the transition device 160, then by the transport device 150 to the transition device 190, and then by the transport device 180 to the second joining device 200. Note that if the joining process has already been performed in the four second joining devices 200, the second carrier C2 is transported to the buffer device 191 and temporarily stored therein.

[0123] The wafer W having undergone the processes of St21 to St23 described above is transferred to the first bonding apparatus 170, and the first carrier C1 having undergone the processes of St24 to St26 described above is transferred to the first bonding apparatus 170. In the first bonding apparatus 170, the first die D1 held by the first carrier C1 is removed from the first carrier C1 and picked up. Furthermore, as shown in FIG. 13( c), the surface D1 a of the picked-up first die D1 is brought into contact with the surface Wa of the wafer W, and the first die D1 is pressed against the wafer W, thereby bonding the first die D1 to the wafer W (St30 in FIG. 12 ).

[0124] In St30, because the surface Wa of the wafer W and the surface D1a of the first die D1 have been modified in St22 and St25, respectively, van der Waals forces (intermolecular forces) are generated between the surfaces Wa and D1a, thereby bonding the surfaces Wa and D1a together. Furthermore, because the surface Wa of the wafer W and the surface D1a of the first die D1 have been hydrophilized in St23 and St26, respectively, the hydrophilic groups between the surfaces Wa and D1a form hydrogen bonds (intermolecular forces), thereby firmly bonding the surfaces Wa and D1a together.

[0125] As described above, the first bonding apparatus 170 is a high-precision bonding apparatus. The first die D1 includes a device layer E on which circuits and the like are formed, and high bonding precision is required. In St30, the first die D1 can be bonded to a desired position on the wafer W with high precision.

[0126] In St30, when all the first dies D1 held in the first carrier C1 are bonded to the wafers W, the first carrier C1 is transferred to the transition device 160 by the transfer device 150, transferred to the transition device 130 by the transfer device 120, and further transferred to the FOUP Fc1 by the transfer device 110. On the other hand, if the first die D1 remains in the first carrier C1 after St30, the first carrier C1 may remain in the first bonding device 170, and the first die D1 may be bonded to the subsequent wafer W. Alternatively, if the first die D1 remains in the first carrier C1 after St30, the first carrier C1 may be transferred to the buffer device 161 by the transfer device 150 and temporarily stored in the buffer device 161.

[0127] On the other hand, in St30, when the first die D1 is bonded to all of the desired positions on the wafer W, the wafer W is transferred by the transfer device 150 to the transition device 190, and then transferred by the transfer device 180 to the second bonding device 200. Note that if the bonding process has already been performed in the four second bonding devices 200, the wafer W is transferred to the buffer device 191 and temporarily stored in the buffer device 191.

[0128] The second carrier C2, which has been subjected to the processes of St27 to St29 described above, is transferred to the second bonding apparatus 200. In the second bonding apparatus 200, the second die D2 held by the second carrier C2 is removed from the second carrier C2 and picked up. Furthermore, as shown in FIG. 13(d), the surface D2a of the picked-up second die D2 is brought into contact with the surface Wa of the wafer W, and the second die D2 is pressed against the wafer W, thereby bonding the second die D2 to the wafer W (St31 in FIG. 12).

[0129] In St31, because the surface Wa of the wafer W and the surface D2a of the second die D2 have been modified in St22 and St28, respectively, van der Waals forces (intermolecular forces) are generated between the surfaces Wa and D2a, thereby bonding the surfaces Wa and D2a together. Furthermore, because the surface Wa of the wafer W and the surface D2a of the second die D2 have been hydrophilized in St23 and St29, respectively, the hydrophilic groups between the surfaces Wa and D2a form hydrogen bonds (intermolecular forces), thereby firmly bonding the surfaces Wa and D2a together.

[0130] As described above, the second bonding apparatus 200 is a low-precision bonding apparatus. Since the second die D2 does not have a circuit or the like formed thereon and therefore requires low bonding precision, the second die D2 is bonded with low precision to a desired position on the wafer W in St31. In this case, since low bonding precision is sufficient, the time required for St31 can be shortened.

[0131] In St31, when all the second dies D2 held in the second carrier C2 are bonded to the wafers W, the second carrier C2 is transferred to the transition device 190 by the transfer device 180, transferred to the transition device 160 by the transfer device 150, transferred to the transition device 130 by the transfer device 120, and further transferred to the FOUP Fc2 by the transfer device 110. On the other hand, if the second die D2 remains in the second carrier C2 after St31 is performed, the second carrier C2 may remain in the second bonding device 200, and the second die D2 may be bonded to the subsequent wafer W. Alternatively, if the second die D2 remains in the second carrier C2 after St31 is performed, the second carrier C2 may be transferred to the buffer device 191 by the transfer device 180 and temporarily stored in the buffer device 191.

[0132] 1, the wafer W is transferred to the transition device 190 by the transfer device 180, transferred to the transition device 160 by the transfer device 150, and transferred to the inspection device 140 by the transfer device 120. In the inspection device 140, for example, an image of the wafer W is taken and the presence or absence of voids between the surface Wa of the wafer W and the dies D1 and D2 is inspected (St32 in FIG. 12).

[0133] Next, the wafer W is transferred to the transition device 130 by the transfer device 120, and further transferred to the FOUP Fw by the transfer device 110. In this way, a series of processes in the mounting processing system 20 is completed.

[0134] The FOUPs into which the wafers W, the first carrier C1, and the second carrier C2 are recovered do not necessarily have to be the same FOUPs that housed the wafers W, the first carrier C1, and the second carrier C2, respectively, when they were carried in. That is, for example, the FOUPs that housed the wafers W, the first carrier C1, and the second carrier C2, respectively, may carry out different members, or a new FOUP or the like for carrying out the wafers W, the first carrier C1, and the second carrier C2 may be carried into the mounting processing system 20.

[0135] According to the above embodiment, the preparation processing system 10 includes the mounting device 85, so that in St16, the first die aggregate K1 can be collectively disposed on the first carrier C1. This eliminates the need to transfer multiple dies arranged on a dicing tape one by one to a carrier, as in the conventional method, and shortens the time required for preparing the first carrier C1 to hold multiple first dies D1. Similarly, the time required for preparing the second carrier C2 to hold multiple second dies D2 can also be shortened. This improves the throughput of the die-on-wafer manufacturing process.

[0136] Here, high-precision dies that require inspection before being placed on the carrier are picked up from the dicing tape, inspected one by one, and then placed on the carrier. In this embodiment, the first die D1 is a high-precision die, but does not require the individual inspection described above. Therefore, the first die assembly K1 can be collectively placed on the first carrier C1 in St16. The second die D2 is a low-precision die, and also does not require the individual inspection described above. Therefore, the second die assembly K2 can be collectively placed on the second carrier C2 in St16. Therefore, this embodiment is particularly useful when placing dies D1 and D2 that do not require individual inspection on the carriers C1 and C2.

[0137] The mounting processing system 20 of this embodiment includes a first bonding apparatus 170, which is a high-precision bonding apparatus, and a second bonding apparatus 200, which is a low-precision bonding apparatus. The first die D1 includes a device layer E on which circuits and the like are formed, and therefore requires high bonding accuracy. The first bonding apparatus 170 can bond the first die D1 to a desired position on the wafer W with high accuracy. The second die D2 does not include circuits and therefore requires low bonding accuracy. The second bonding apparatus 200 bonds the second die D2 to a desired position on the wafer W with low accuracy. Since low bonding accuracy is sufficient, the time required for bonding the second die D2 to the wafer W can be shortened. Therefore, the throughput of the die-on-wafer manufacturing process can be improved while appropriately mounting multiple types of first dies D1 and second dies D2 on the wafer W with the required bonding accuracy.

[0138] In this embodiment, the second bonding device 200 is a low-precision bonding device, and the device configuration can be reduced to lower precision specifications compared to a high-precision bonding device. As a result, the device cost of the second bonding device 200 can be reduced, and the device cost of the processing system 1 can be reduced.

[0139] The mounting device 85 in the above embodiment adsorbs and holds the dies D1 and D2 on the adsorption surface by, for example, generating electrostatic (Coulomb) force between the carriers C1 and C2 and the dies D1 and D2, but the method of arranging the dies D1 and D2 on the carriers C1 and C2 (the method of holding the dies D1 and D2 by the carriers C1 and C2) is not limited to this.

[0140] For example, the die assemblies K1 and K2 may be pressed against the carriers C1 and C2 in the mounting device 85. In the following description, the first die assembly K1 is mounted on the first carrier C1, but the same applies to the second die assembly K2 being mounted on the second carrier C2.

[0141] For example, as shown in FIG. 14 , in the mounting device 85, the back surface C1b of the first carrier C1 is held by a chuck 330. In this state, a roller 340 is brought into contact with the support tape P on the front surface K1a side of the first die assembly K1 and moved. In this case, by pressing the first die assembly K1 against the first carrier C1, air is removed from between the first die assembly K1 and the insulating layer N1, generating a vacuum suction force between the first die assembly K1 and the insulating layer N1, thereby suction-holding the first die assembly K1 to the first carrier C1. Note that in this case, the material of the main body M1 of the first carrier C1 does not need to be conductive and can be any material. Furthermore, the material of the insulating layer N1 does not need to be insulating and can be any material.

[0142] 15 , for example, in the mounting device 85, the first carrier C1 is disposed above and the first die assembly K1 is disposed below. The support tape P on the front surface K1a of the first die assembly K1 is held by a lower chuck 350, and the back surface C1b of the first carrier C1 is held by an upper chuck 351. In this state, a striker 360 presses the center of the back surface C1b of the first carrier C1. The striker 360 has an actuator unit 361 that contacts the center of the back surface C1b of the first carrier C1 and a cylinder unit 362 that supports and moves the actuator unit 361 in the vertical direction. With the actuator unit 361 in contact with the center of the back surface C1b of the first carrier C1, the cylinder unit 362 moves the actuator unit 361 downward to press the center of the back surface C1b. This causes air to escape from between the first die assembly K1 and the insulating layer N1, creating a vacuum suction force between the first die assembly K1 and the insulating layer N1, and the first die assembly K1 is adsorbed and held onto the first carrier C1.

[0143] Alternatively, for example, an adhesive sheet may be used for the insulating layer N1 of the first carrier C1. In this case, adhesive force is generated between the first die assembly K1 and the insulating layer N1, thereby holding the first die assembly K1 on the first carrier C1. A thermal release sheet may be used for the insulating layer N1. The thermal release sheet is a sheet that has adhesive force at room temperature but is released when heated. In this case, when bonding the first die D1 to the wafer W in St30, the first die D1 is released from the first carrier C1. At this time, heating the insulating layer N1 can make it easier to release the first die D1.

[0144] Alternatively, for example, an intermolecular force, such as van der Waals force, may be generated between the insulating layer N1 of the first carrier C1 and the first die D1, thereby holding the first die D1 on the first carrier C1. In such a case, for example, the insulating layer N1 may be heated to fluidize (transition into glass), and then the first die D1 may be pressed against the insulating layer N1 to adhere to it. Any method for heating the insulating layer N1 may be used. For example, a heating mechanism may be provided on a stage (not shown) holding the first carrier C1 to heat the insulating layer N1. This adhesion then generates an intermolecular force between the insulating layer N1 and the first die D1, thereby holding the first die D1 on the first carrier C1. Note that if an intermolecular force is generated simply by heating the insulating layer N1, the step of adhering the first die D1 to the insulating layer N1 may be omitted.

[0145] In the above embodiment, the first carrier C1 holds a plurality of first dies D1, and the second carrier C2 holds a plurality of second dies D2, but one carrier may hold a plurality of first dies D1 and a plurality of second dies D2. Alternatively, one carrier may hold three or more types of dies, and the pattern of dies held by one carrier is arbitrary.

[0146] Furthermore, in the above embodiment, the case where the first die D1 and the second die D2 are mounted on the wafer W has been described. However, three or more types of dies may be mounted on the wafer W. For example, a third die D3 may be mounted on the wafer W in addition to the first die D1 and the second die D2. In such a case, the processing system 1 may be provided with a dedicated bonding device (not shown) for bonding the third die D3 to the wafer W. Alternatively, if the third die D3 is a low-precision die, the second die D2 and the third die D3 may be bonded to the wafer W by replacing the bond head in the second bonding device 200.

[0147] In the above embodiment, support tape P is used as the support material, but support wafer Q may also be used. A series of die-on wafer manufacturing processes using support wafer Q will be described below. Fig. 16 is an explanatory diagram schematically showing some of the processing steps in preparation processing system 10, and Fig. 17 is an explanatory diagram schematically showing some of the processing steps in mounting processing system 20.

[0148] First, as shown in Fig. 16(a) , a first die forming wafer G1 and a support wafer Q are bonded in a bonding apparatus (not shown) of the preparation processing system 10. The support wafer Q is bonded to the surface G1a (device layer E) of the first die forming wafer G1. In this embodiment, copper wiring R is formed on the device layer E of the first die forming wafer G1.

[0149] Next, as shown in Fig. 16(b), edge trimming of the first die wafer G1 is performed in a trimming device (not shown) of the preparation processing system 10. In the trimming device, for example, a laser beam is irradiated onto the peripheral edge of the first die wafer G1 to remove the peripheral edge.

[0150] 16C, the back surface G1b of the first die wafer G1 is ground in the grinding device 82 of the preparation processing system 10. At this time, the copper wiring R of the first die wafer G1 is exposed on the back surface G1b.

[0151] 16D, an insulating film U is formed on the rear surface G1b of the first die wafer G1 in a film forming apparatus (not shown) of the preparation processing system 10. In the film forming apparatus, for example, CVD (Chemical Vapor Deposition) is performed using plasma in a reduced pressure atmosphere to form the insulating film U on the rear surface G1b.

[0152] Next, in the polishing device 83 of the preparation processing system 10, the back surface G1b of the first die wafer G1 is polished as shown in FIG. 16(e).

[0153] Next, the first die wafer G1 is diced in the dicing device 80 of the preparation processing system 10 as shown in FIG. 16(f). At this time, grooves L are formed in the first die wafer G1, and the first die wafer G1 is singulated into a plurality of first dies D1. In this way, a first die aggregate K1 (a plurality of first dies D1) supported on the support wafer Q is formed.

[0154] Next, the front and rear surfaces of the first die aggregate K1 are turned over, and the front surface K1a (support wafer Q) faces upward as shown in FIG. 16(g).

[0155] Next, in the mounting device 85 of the preparation processing system 10, the first die aggregate K1 is disposed with its rear surface K1b on the front surface C1a of the first carrier C1 as shown in FIG. 16(g).

[0156] Next, in the peeling device 86 of the preparation processing system 10, the support wafer Q bonded to the surface K1a of the first die aggregate K1 held by the first carrier C1 is peeled off as shown in Fig. 16(h). Note that the configuration of the peeling device 86 may be different from that of the device that peels off the support tape P.

[0157] Next, in the cleaning device 84 of the preparation processing system 10, the back surface K1b of the first die aggregate K1 is cleaned with, for example, a cleaning liquid.

[0158] Next, in the mounting processing system 20, the first die D1 of the first die aggregate K1 is bonded to the front surface Wa of the wafer W as shown in FIG. 17(a).

[0159] 17(b), a plurality of first dies D1 are mounted on the wafer W in a planar arrangement, and these first dies D1 are stacked in multiple layers. At this time, copper wiring R is connected between the first dies D1 stacked in multiple layers. This completes the series of die-on-wafer manufacturing processes.

[0160] Next, a description will be given of a series of die-on wafer manufacturing processes using a support wafer Q according to another embodiment. Fig. 18 is an explanatory diagram showing a schematic view of some of the process steps in the preparation process system 10, and Fig. 19 is an explanatory diagram showing a schematic view of some of the process steps in the mounting process system 20.

[0161] First, the processes shown in Figures 16(a) to 16(g) are performed to arrange the first die aggregate K1 on the front surface C1a of the first carrier C1 with the back surface K1b side as shown in Figure 18(a).

[0162] Next, the process shown in FIG. 16(h) described above is performed to peel off the support wafer Q bonded to the surface K1a of the first die aggregate K1 held by the first carrier C1 as shown in FIG. 18(b).

[0163] Next, as shown in Fig. 18(c), first die assemblies K1 supported by support wafers Q are stacked in multiple layers on a first carrier C1. That is, the back surface K1b of the first die assembly K1 bonded to the support wafer Q shown in Fig. 18(a) is disposed on the front surface K1a of the first die assembly K1 from which the support wafer Q shown in Fig. 18(b) has been peeled off. Thereafter, as shown in Fig. 18(d), the topmost support wafer Q is peeled off, and the first die assemblies K1 are stacked in multiple layers on the first carrier C1.

[0164] Next, in the cleaning device 84 of the preparation processing system 10, the back surface K1b of the uppermost first die aggregate K1 is cleaned with, for example, a cleaning liquid.

[0165] Next, in the mounting processing system 20, the stacked first die D1 is bonded to the front surface Wa of the wafer W as shown in FIG.

[0166] 19(b), a plurality of first dies D1 are mounted on the wafer W in a planar arrangement, and these first dies D1 are stacked in multiple layers. At this time, copper wiring R is connected between the first dies D1 stacked in multiple layers. This completes the series of die-on-wafer manufacturing processes.

[0167] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0168] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that would be apparent to a person skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0169] 1 Processing system 85 Mounting device C1 First carrier C2 Second carrier D1 First die D2 Second die K1 First die assembly K2 Second die assembly M1, M2 Main body P Support tape W Wafer

Claims

1. A method for processing a plurality of dies to be mounted on a target substrate, comprising: preparing a die assembly in which a plurality of the divided dies are supported by a support material; and disposing the die assembly on a carrier on the opposite side of the support material, wherein the shape of the main body of the carrier is the same as the shape of the target substrate.

2. The processing method according to claim 1, further comprising peeling the support material from the plurality of dies disposed on the carrier.

3. The processing method according to claim 2, wherein the steps of preparing the die assembly, disposing the die assembly on the carrier, and peeling the support material are repeated to stack a plurality of the dies on the carrier in a plurality of layers.

4. The processing method according to claim 1, further comprising bonding the plurality of dies disposed on the carrier to the target substrate.

5. The processing method according to claim 1, wherein when disposing the die assembly on the carrier, the die assembly is adsorbed to the carrier by electrostatic force.

6. The processing method according to claim 1, wherein when disposing the die assembly on the carrier, the die assembly is pressed against the carrier to be pressure-bonded.

7. The processing method according to claim 1, wherein individual inspection of the dies before being disposed on the carrier is unnecessary.

8. The processing method according to claim 1, wherein preparing the die assembly includes dicing a die substrate using plasma and forming grooves for fragmenting the die substrate into a plurality of the dies.

9. The processing method according to claim 1, wherein preparing the die assembly includes dicing a die substrate using plasma, forming grooves from the surface of the die substrate to the middle in the thickness direction, attaching the support material to the surface of the die substrate, grinding the back surface of the die substrate to penetrate the grooves in the thickness direction, and fragmenting the die substrate into a plurality of the dies.

10. A processing system for mounting a plurality of dies on a target substrate, comprising: a mounting device for disposing a die assembly in which a plurality of the divided dies are supported by a support material on a carrier on the opposite side of the support material, wherein the shape of the main body of the carrier is the same as the shape of the target substrate.

11. The processing system according to claim 10, further comprising a peeling device for peeling the support material from the plurality of dies disposed on the carrier.

12. The processing system according to claim 11, wherein arranging the die assembly on the carrier in the mounting device and repeatedly peeling the support material in the peeling device to stack a plurality of the dies on the carrier in a plurality of layers.

13. The processing system according to claim 10, further comprising a bonding device that bonds a plurality of the dies arranged on the carrier to the target substrate.

14. The processing system according to claim 10, wherein the mounting device adsorbs the die assembly to the carrier by electrostatic force.

15. The processing system according to claim 10, wherein the mounting device presses and crimps the die assembly to the carrier.

16. The processing system according to claim 10, wherein individual inspection of the die before being arranged on the carrier is unnecessary.

17. The processing system according to claim 10, further comprising a dicing device that dices a die substrate using plasma and forms grooves for separating the die substrate into a plurality of the dies.

18. The processing system according to claim 10, comprising: a dicing device that dices a die substrate using plasma and forms grooves from the surface of the die substrate to the middle in the thickness direction; a bonding device that attaches the support material to the surface of the die substrate; and a grinding device that grinds the back surface of the die substrate to penetrate the grooves in the thickness direction and separates the die substrate into a plurality of the dies.

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