Artificial brain battery that mimics the behavior of neurons involved in the transport of adrenaline produced in the human brain

A brain implant with semiconductor-layered semi-metal oxide electrodes mimics synaptic behavior to improve signal transmission and reduce energy consumption, addressing inefficiencies in existing treatments for neurodegenerative diseases.

WO2025144348A1PCT designated stage Publication Date: 2025-07-03ONDOKUZ MAYIS UNIVERSITESI
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Patent Information

Application Number
PCT/TR2024/051780
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-12-26
Publication Date
2025-07-03

AI Technical Summary

Technical Problem

Existing treatments for neurodegenerative diseases such as Alzheimer's and Parkinson's fail to precisely mimic the synaptic behavior of the human brain, leading to inefficiencies in signal transmission and energy consumption.

Method used

A brain implant using semiconductor-layered semi-metal oxide electrodes mimics synaptic behavior by facilitating ion diffusion through suitable channels, ensuring precise synaptic responses with low energy consumption, and replicating synaptic plasticity.

Benefits of technology

The implant effectively models synaptic communication, enhancing learning and memory capabilities while reducing energy consumption, offering a potential treatment for neurodegenerative diseases.

✦ Generated by Eureka AI based on patent content.

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Abstract

This invention relates to a brain battery capable of electrically mimicking the behavior of brain synapses. The battery is designed to support or replicate brain functions in individuals with neurodegenerative diseases. Specifically, it can be utilized as a potential solution for the treatment of diseases such as Alzheimer's disease and Parkinson's disease, which affect brain functions. Featuring electrodes made of semiconductor-layered semi-metal oxides, the battery is optimized for energy-efficient operation and precise synaptic response. The invention finds applications in biomedical engineering and neurology, particularly in the treatment of neurodegenerative disorders.
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Description

[0001] ARTIFICIAL BRAIN BATTERY THAT MIMICS THE BEHAVIOR OF NEURONS INVOLVED IN THE TRANSPORT OF ADRENALINE PRODUCED IN THE HUMAN BRAIN

[0002] Technical Field:

[0003] This invention relates to a brain battery capable of electrically mimicking the behavior of brain synapses. The battery is designed to support or replicate brain functions in individuals with neurodegenerative diseases. Specifically, it can be utilized as a potential solution for the treatment of diseases such as Alzheimer’s disease and Parkinson’s disease, which affect brain functions. Featuring electrodes made of semiconductor-layered semi-metal oxides, the battery is optimized for energy-efficient operation and precise synaptic response. The invention finds applications in biomedical engineering and neurology, particularly in the treatment of neurodegenerative disorders.

[0004] State of the Art

[0005] In the technical field related to the invention, various devices and methods are used for the treatment of neurodegenerative diseases. Techniques such as deep brain stimulation are particularly applied for Parkinson's disease. However, our invention is fundamentally different from existing methods, as it is based on a unique brain battery concept that electrically mimics brain synapse behavior rather than sending signals to the brain. There is no patent or publication in the existing literature that exactly matches this concept. However, there are studies on similar concepts and methods for modulating neural activity.

[0006] The invention described in the application numbered "WO2015079324" includes a system designed for treating a patient, consisting of a stimulator for stimulating brain tissue, a control device for adjusting stimulation parameters, and a diagnostic tool for measuring patient parameters and producing diagnostic data. The invention described in the application numbered "US20060173510" explains devices and methods aimed at detecting, preventing, and / or treating neurological disorders. These devices and methods utilize electrical stimulation and include a unique concentric ring electrode component.

[0007] The invention described in the application numbered "US8280514" relates to a method for identifying a region of the brain by recording discharges from at least one implanted electrode and analyzing the recordings of discharges within the beta frequency band range to measure neuronal firing and / or local field potentials.

[0008] In the state of the art, electrodes are placed in the brain to deliver continuous electrical stimuli to specific brain regions, aiming to alleviate the symptoms of diseases by directly providing electrical or pharmacological stimulation to the nervous system. Numerous devices and methods have been developed to treat neurodegenerative diseases to date. Approaches such as Deep Brain Stimulation (DBS) and Neuromodulation target specific brain regions to mitigate symptoms, while methods like optogenetics, bioelectronic medicines, and memristor-based circuits modulate more specific neural mechanisms. However, none of these studies possess the capacity to directly and precisely mimic the synaptic behavior of the human brain.

[0009] The neuromorphic device included in the present application supports synapses that cannot perform their functions by mimicking the synaptic behavior of the human brain. This external reinforcement method holds the potential to offer an innovative and pioneering approach to treating neurodegenerative diseases such as Alzheimer’s, Dementia, and Schizophrenia.

[0010] In conclusion, due to the aforementioned limitations and the inadequacies of existing solutions, there is a need for new technology in this field.

[0011] Summary of the Invention and Objectives

[0012] This invention relates to a brain implant capable of electrically mimicking the behavior of brain synapses.

[0013] The primary objective of the invention is to precisely replicate the signal behavior of the synaptic regions in the human brain. This offers a potential solution to eliminate the issues encountered during the transmission of electrical signals produced by neurons via synapses, particularly in cases of learning disorders. Another objective of the invention is to enable the capability to more effectively mimic brain synaptic behavior by using semiconducting layered semi-metal oxides as electrode materials. This material selection minimizes the attenuation of electrical signals and accurately models synaptic communication.

[0014] Another objective of the invention is to utilize high-bandgap semiconductor materials, which prevent signal transmission delays, while low-bandgap materials reduce attenuation and enhance energy efficiency. This allows the battery to provide precise synaptic responses while maintaining low energy consumption.

[0015] Another objective of the invention is to ensure that electrical transmission occurs via cationic ions, incorporating electrode materials specifically designed to mimic synaptic communication and facilitate ion diffusion through appropriate diffusion channels. This enhances the accuracy of the battery by modeling natural synaptic communication.

[0016] Another objective of the invention is the selection of layered semi-metal oxides with suitable diffusion channels for ion diffusion, which enhances the ability to mimic synaptic plasticity and strengthen synaptic connections. This enables the battery to model brain functions more effectively.

[0017] Explanation of Figures:

[0018] FIGURE 1 : Aschematic illustration of the brain battery subject to the invention.

[0019] Reference Numbers:

[0020] 1 . Gate Electrode

[0021] 2. Electrolyte

[0022] 3. Source Electrode

[0023] 4. Drain Electrode

[0024] 5. Active Layer

[0025] Detailed Description of the Invention

[0026] The artificial neuromorphic device is an artificial neuromorphic system designed to mimic the synaptic behavior of the human brain. Unlike traditional computer architectures, it aims to emulate the energy efficiency, parallelism, and adaptive learning capabilities of biological synapses. The ultimate goal is to provide a biocompatible external device that can aid in the treatment and potentially complete eradication of incurable diseases such as dementia, schizophrenia, cognitive decline, and Alzheimer’s disease, which have plagued humanity for centuries.

[0027] In general terms, the human brain contains approximately 86 billion neurons, interconnected through billions of synaptic connections. Neurons are the fundamental building blocks of the central and peripheral nervous systems. They are cells that receive and transmit electrical and chemical signals. Neurons play a vital role in the learning process. Learning involves structural and functional changes in the brain, a process known as neuroplasticity. This process is primarily driven by the strengthening or weakening of connections (synapses) between neurons. Short-term and long-term memory represent two distinct forms of learning and memory, depending on the persistence of these changes.

[0028] Short-Term Memory and Synaptic Activation: Short-term memory refers to the ability to store information for a limited period. This leads to rapid and temporary changes in neurons (e.g., an increase in neurotransmitter release). Such changes are typically associated with synaptic activation or slight modifications and are usually not permanent.

[0029] Long-Term Memory and Synaptic Strengthening: Long-term memory refers to the process through which structural and functional changes occur in the brain to allow information to be stored for an extended period (sometimes a lifetime). These changes particularly take place during a process known as long-term potentiation (LTP), which involves the strengthening of synaptic connections between neurons. LTP is a phenomenon where synaptic activity increases, and the connections are strengthened.

[0030] When approached from a cellular biology perspective, each neuron consists of a cell body (soma), dendrites, and an axon.

[0031] • Cell Body (Soma): This is the main part of the neuron. The nucleus, which contains the cell's genetic information, is located in this section.

[0032] • Dendrites: These are thin, branching structures that extend from the cell body and receive signals from other neurons. • Axon: This is the long, slender structure through which the neuron transmits signals. At the end of the axon, synaptic terminals are present to relay signals to other neurons or target cells.

[0033] Functions and Roles:

[0034] 1. Information Transmission: Neurons perform the primary communication function of the nervous system by receiving and transmitting electrical signals.

[0035] 2. Information Processing: Neurons generate electrical activity in response to incoming signals, forming the foundation of cognitive functions and sensory responses in the brain.

[0036] 3. Memory and Learning: The strength and number of synaptic connections between neurons are critical for learning and memory formation. When something new is learned or an experience occurs, changes take place in the structure and function of synapses.

[0037] 4. Cellular-Level Communication: Neurons communicate at the cellular level by transmitting signals via chemical neurotransmitters. These neurotransmitters cross the synaptic cleft to relay information from one neuron to another.

[0038] In neurodegenerative diseases such as dementia and Alzheimer’s, significant changes occur in neuronal activity and structural integrity. These neuronal alterations are among the key factors underlying the deterioration of brain function in such diseases. These disruptions can lead to memory loss, difficulties in decision-making, language problems, and other neurological symptoms. Compared to a normal brain, a brain affected by dementia or Alzheimer’s exhibits notable impairments in neuronal activity, structure, and function. Therefore, early diagnosis, treatment, and management of these conditions are of critical importance.

[0039] The invention encompasses the concept of developing a brain implant capable of electrically mimicking brain synapse behavior. This implant features electrodes produced using layered semiconductor semi-metal oxides.

[0040] Technical Information on Electrode Materials: Selection of Electrode Material: Semiconductor materials have been chosen to prevent delays in the attenuation of electrical signals required for the brain's short-term behavior.

[0041] Band Gap Criterion: Materials with a high electrical band gap cause signal transmission delays, while those with a low band gap lead to delayed attenuation. Therefore, semiconductor materials are ideal as they possess an optimal band gap between these extremes.

[0042] Ionic Conduction Mechanism: Electrical conduction must occur via cationic ions. For this reason, the selected electrode material must have diffusion channels suitable for ion diffusion.

[0043] Layered Semi-Metal Oxides: These materials are ideal for this application due to their semiconductor properties and suitable ion diffusion channels.

[0044] Electrode Thickness: The thickness of the electrode material is directly related to the power density consumed. Electrode materials produced homogeneously at the nanoscale enable lower power consumption. This is a critical factor for the energy efficiency of the battery and significantly affects its response time.

[0045] In the brain cell configuration, only one electrode will perform the synaptic behavior. The other electrode will serve as the ion source. The conductivity of the electrode material tasked with synaptic behavior will be controlled by two separate conductive materials, similar to the source electrode (3) and drain electrodes (4) in typical memristor systems.

[0046] Connection and Transmission:

[0047] The artificial synaptic device establishes a connection with the active layer (5) through the gate electrode (1). This connection represents electrical communication similar to a biological synaptic connection.

[0048] The gate electrode (1) can receive various input signals and process these signals to control the conductivity of the active layer (5). This functionality mimics the strengthening or weakening of biological synaptic connections.

[0049] Role of the Active Layer (5): The active layer (5) assumes the role of information processing and storage, similar to biological synapses. The specialized materials in this layer exhibit variable conductivity under the influence of electrical current.

[0050] The learning capability of the artificial synaptic device is related to changes in the structure of the active layer (5). For instance, a frequently repeated signal can strengthen the synaptic connection, representing a process akin to learning.

[0051] Transmission via Drain Electrode and Source Electrode:

[0052] The current passing through the active layer (5) establishes a communication pathway between the drain and source terminals. This pathway enables the transmission of information within the device.

[0053] The drain electrode and source electrode can be likened to the axon of a biological neuron. Changes in the active layer (5) influence the characteristics of the current between the drain and source, representing synaptic transmission.

[0054] Synaptic Plasticity and Adaptation:

[0055] A key feature of the artificial synaptic device is its ability to mimic synaptic plasticity, representing the device's capacity for learning and adapting to environmental changes.

[0056] Structural changes in the materials of the active layer (5) can strengthen or weaken the synaptic connection. This enables the device to adapt to various inputs and exhibit behavior similar to learning.

[0057] Memory and Learning:

[0058] The artificial synaptic device possesses the capability to process, store, and retrieve information, representing functionalities akin to learning and memory formation.

[0059] Changes in the active layer (5) enable the device to adapt to past experiences. This simulates the processes of recalling previously learned information or integrating new information.

[0060] The artificial synaptic device is a neuromorphic system designed to mimic the neural functionality of the brain. Unlike traditional computer architectures, this system targets the energy efficiency, parallelism, and adaptive learning capabilities of biological synapses. Its ability to adapt to various input signals, facilitate learning, and enable memory formation provides opportunities for diverse applications, such as artificial intelligence implementations and the treatment of neurological disorders.

[0061] The gate electrode (1), active layer (5), drain electrode (4), and source electrode (3) play specific roles in the context of a brain-like artificial synapse or neuromorphic device, with each component having a counterpart resembling the biological nervous system.

[0062] Gate Electrode (1):

[0063] Biological Counterpart: The gate electrode (1) in an artificial synaptic device is analogous to the dendrites of a biological neuron. Dendrites are the branched extensions of a neuron that receive signals from other neurons.

[0064] Role: The gate electrode (1) receives electrical signals and controls the flow of current through the active layer (5). It modulates the synaptic strength in the artificial synapse, similar to how dendrites receive and integrate signals in a biological neuron.

[0065] Active Layer (5):

[0066] Biological Counterpart: The active layer (5) can be likened to synapses between biological neurons. Synapses are the connections through which one neuron communicates with another, allowing for the transmission of signals (chemical or electrical).

[0067] Role: The active layer (5) functions as an artificial synapse where information is processed and transmitted. Changes in the properties of the active layer (5) mimic synaptic plasticity, resembling learning and memory-like functions.

[0068] Discharge Electrode (4) and Source Electrode (3):

[0069] Biological Counterpart: The discharge electrode (4) and source electrode (3) are analogous to the axon of a biological neuron. The axon is a long, slender structure that transmits signals away from the cell body, and the terminal buttons are regions that release neurotransmitters into the synaptic cleft.

[0070] Role: The discharge and source terminals facilitate the flow of current through the active layer (5), modulated by the gate electrode (1). This current flow represents the transmission of information and is analogous to the signal transmission in a neuron's axon and the release of neurotransmitters at the synaptic terminal. In summary, the gate electrode (1), active layer (5), discharge, and source electrodes form the core components of an artificial synapse, mimicking the fundamental elements of biological neural networks. This analogy enables the development of neuromorphic devices that replicate specific aspects of synaptic behavior, contributing to advancements in brain-like computation and artificial intelligence applications.

[0071] The electrolyte (2) used in the brain implant is an artificial cerebrospinal fluid, designed to mimic the composition of natural cerebrospinal fluid. This electrolyte contains Na, Mg, and K ions in alignment with the natural composition of brain fluid. Its role within the brain implant is critical, as it facilitates the transmission of signals produced at the gate electrode (1) to the active layer (5) via ion transport. By employing this fluid composition, the brain implant ensures efficient transmission of electrical signals while maintaining compatibility and harmonious interaction with brain tissue.

Claims

CLAIMS1. An artificial synaptic device capable of electrically mimicking brain synaptic behavior, characterized by:• At least one gate electrode (1) that establishes a connection with the active layer (5), receives electrical input signals, processes these signals, and controls the conductivity of the active layer (5),• At least one active layer (5) that acts as an artificial synapse, performing information processing and transmission while mimicking synaptic plasticity and enabling information processing and storage,• At least one drain electrode (4) that facilitates the flow of current through the active layer (5) modulated by the gate electrode (1),• At least one source electrode (3) that facilitates the flow of current through the active layer (5) modulated by the gate electrode (1),• At least one electrolyte (2) that ensures the transmission of signals produced at the gate electrode (1) to the active layer (5) via ions.

2. The artificial synaptic device according to Claim 1 , characterized by including an active layer (5) exhibiting variable conductivity under the influence of electrical current.

3. The artificial synaptic device according to Claim 1 , characterized by including a gate electrode (1), a drain electrode (4), and a source electrode (3) made of semiconductor-layered semi-metal oxides.

4. The artificial synaptic device according to Claim 1 , characterized by including an electrolyte (2) containing Na+, K+, and Mg2+ ions for enabling cationic ionbased electrical transmission.

Citation Information

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