Shaping system, control device, control circuit, control method, computer program, and shaping method

Abstract

This shaping system comprises: a shaping device for sequentially shaping a plurality of structural layers; and a control device for controlling the shaping device. The shaping device comprises an irradiation optical system for irradiation a shaping beam, and a movement device for changing the distance between a shaped structural layer and a material supply member. On the basis of distance information pertaining to the distance between the shaped structural layer and the material supply member, the control device reads, from path information provided for each of unit amounts of movement caused by the movement device, in-layer movement path information pertaining to the movement path of an irradiated location irradiated by the shaping beam, such that in-layer path information is read for every M (M being a natural number) layers if the distance difference is a prescribed threshold or less and such that the in-layer path information is read for every N (N being a natural number less than M) layers if the distance difference exceeds the prescribed threshold.

Description

Forming system, control device, control circuit, control method, computer program, and forming method

[0001] The present invention relates to the technical fields of, for example, a control device, a control circuit, a control method, a computer program, and a modeling method for modeling a modeled object.

[0002] An example of a modeling system for modeling a modeled object is described in Patent Document 1. Such a modeling system is required to model a modeled object with high precision.

[0003] US Patent Publication No. 2016 / 0375521

[0004] According to a first aspect, a manufacturing method is provided, comprising: a manufacturing apparatus that sequentially manufactures a plurality of structure layers on a mounting surface; and a control device that controls the manufacturing apparatus, wherein the manufacturing apparatus comprises: an irradiation optical system that irradiates a manufacturing beam; a material supply member that supplies a manufacturing material to a molten pool formed by irradiation of the manufacturing beam; a distance information acquisition device that acquires distance information regarding the distance between the material supply member and the structure layer manufactured by irradiation of the manufacturing beam from the irradiation optical system and supply of the manufacturing material from the material supply member; and a moving device that moves at least one of the material supply member and the mounting surface to change the distance; and the control device controls the manufacturing apparatus to irradiate the manufacturing beam from the irradiation optical system. a memory that stores trajectory information having intra-layer movement trajectory information regarding the movement trajectory of the irradiation position for each unit movement amount by the moving device, and a processor that reads out the intra-layer trajectory information from the trajectory information so as to sequentially transmit a plurality of the intra-layer trajectory information to the moving device, wherein the processor, based on the distance information acquired by the distance information acquisition device, reads out the intra-layer trajectory information for every M layers if a distance difference regarding the difference between the distance and a target value is within a predetermined threshold, and reads out the intra-layer trajectory information for every N layers if the distance difference exceeds the predetermined threshold, where M is a natural number and N is a natural number smaller than M.

[0005] According to a second aspect, a manufacturing method is provided, comprising: a manufacturing apparatus for sequentially manufacturing a plurality of structure layers on a mounting surface; and a control circuit for controlling the manufacturing apparatus, wherein the manufacturing apparatus comprises an irradiation optical system for irradiating a manufacturing beam; a material supply member for supplying a manufacturing material to a molten pool formed by irradiation of the manufacturing beam; a distance information acquisition device for acquiring distance information regarding the distance between the material supply member and the structure layer manufactured by irradiation of the manufacturing beam from the irradiation optical system and supply of the manufacturing material from the material supply member; and a moving device for moving at least one of the material supply member and the mounting surface so as to change the distance; and the control circuit controls the control circuit to control the irradiation optical system to A modeling system is provided in which the modeling device controls modeling based on intra-layer movement trajectory information regarding the movement trajectory of the irradiation position of the modeling beam, and when the distance information acquired by the distance information acquisition device regarding the Lth layer satisfies a first condition, the modeling device controls modeling based on the intra-layer trajectory information that is M layers above the Lth layer, and when the distance information acquired by the distance information acquisition device regarding the Lth layer satisfies a second condition different from the first condition, the modeling device controls modeling based on the intra-layer trajectory information that is N layers above the Lth layer, wherein L is a natural number, M is a natural number, and N is a natural number smaller than M.

[0006] According to a third aspect, there is provided a control device for controlling a modeling device that sequentially models a plurality of structure layers on a mounting surface, the modeling device including: an irradiation optical system that irradiates a modeling beam; a material supply member that supplies modeling material to a molten pool formed by irradiation of the modeling beam; a distance information acquisition device that acquires distance information regarding the distance between the material supply member and a structure layer formed by irradiation of the modeling beam from the irradiation optical system and supply of the modeling material from the material supply member; and a moving device that moves at least one of the material supply member and the mounting surface to change the distance; and the control device controls irradiation of the modeling beam from the irradiation optical system. A control device is provided, which includes a memory that stores trajectory information having intra-layer movement trajectory information regarding a position movement trajectory for each unit movement amount by the moving device, and a processor that reads out the intra-layer trajectory information from the trajectory information so as to sequentially transmit a plurality of the intra-layer trajectory information to the moving device, wherein the processor, based on the distance information acquired by the distance information acquisition device, reads out the intra-layer trajectory information for every M layers if a distance difference regarding the difference between the distance and a target value is within a predetermined threshold, and reads out the intra-layer trajectory information for every N layers if the distance difference exceeds the predetermined threshold, where M is a natural number and N is a natural number smaller than M.

[0007] According to a fourth aspect, there is provided a control circuit for controlling a modeling device that sequentially models a plurality of structure layers on a mounting surface, the modeling device including: an irradiation optical system that irradiates a modeling beam; a material supply member that supplies modeling material to a molten pool formed by irradiation of the modeling beam; a distance information acquisition device that acquires distance information regarding the distance between the material supply member and the structure layer modeled by irradiation of the modeling beam from the irradiation optical system and supply of the modeling material from the material supply member; and a moving device that moves at least one of the material supply member and the mounting surface to change the distance; and the control circuit controls the control circuit to acquire information regarding the distance between the material supply member and the structure layer modeled by irradiation of the modeling beam from the irradiation optical system. A control circuit is provided that controls modeling by the modeling device based on intra-layer movement trajectory information regarding the movement trajectory of the irradiation position of the modeling beam, and when the distance information acquired by the distance information acquisition device regarding the Lth layer satisfies a first condition, controls modeling by the modeling device based on the intra-layer trajectory information that is M layers above the Lth layer, and when the distance information acquired by the distance information acquisition device regarding the Lth layer satisfies a second condition different from the first condition, controls modeling by the modeling device based on the intra-layer trajectory information that is N layers above the Lth layer, where L is a natural number, M is a natural number, and N is a natural number smaller than M.

[0008] According to a fifth aspect, there is provided a control method for controlling a modeling device that sequentially models a plurality of structure layers on a mounting surface, the modeling device comprising: an irradiation optical system that irradiates a modeling beam; a material supply member that supplies modeling material to a molten pool formed by irradiation of the modeling beam; a distance information acquisition device that acquires distance information regarding the distance between the material supply member and a structure layer modeled by irradiation of the modeling beam from the irradiation optical system and supply of the modeling material from the material supply member; and a movement device that moves at least one of the material supply member and the mounting surface so as to change the distance, and the control method includes: an intra-layer movement trajectory related to the movement trajectory of the irradiation position of the modeling beam from the irradiation optical system; A control method is provided which includes preparing trajectory information having trace information for each unit movement amount by the moving device, and reading out the intra-layer trajectory information from the trajectory information so as to sequentially transmit a plurality of the intra-layer trajectory information to the moving device, wherein the reading out includes reading out the intra-layer trajectory information for every M layers when a distance difference between the distance and a target value is within a predetermined threshold based on the distance information acquired by the distance information acquisition device, and reading out the intra-layer trajectory information for every N layers when the distance difference exceeds the predetermined threshold based on the distance information acquired by the distance information acquisition device, wherein M is a natural number and N is a natural number smaller than M.

[0009] According to a sixth aspect, there is provided a control method for controlling a modeling device that sequentially models a plurality of structure layers on a mounting surface, the modeling device comprising: an irradiation optical system that irradiates a modeling beam; a material supply member that supplies modeling material to a molten pool formed by irradiation of the modeling beam; a distance information acquisition device that acquires distance information regarding the distance between the material supply member and a structure layer modeled by irradiation of the modeling beam from the irradiation optical system and supply of the modeling material from the material supply member; and a movement device that moves at least one of the material supply member and the mounting surface to change the distance. The control method includes: A control method is provided which includes controlling modeling by the modeling device based on intra-layer movement trajectory information regarding the movement trajectory of the shooting position, controlling modeling by the modeling device based on the intra-layer trajectory information that is M layers above the L layer when the distance information acquired by the distance information acquisition device regarding the Lth layer satisfies a first condition, and controlling modeling by the modeling device based on the intra-layer trajectory information that is N layers above the L layer when the distance information acquired by the distance information acquisition device regarding the Lth layer satisfies a second condition that is different from the first condition, wherein L is a natural number, M is a natural number, and N is a natural number smaller than M.

[0010] According to a seventh aspect, there is provided a computer program for causing a computer to execute the control method provided by the fifth or sixth aspect.

[0011] According to an eighth aspect, there is provided a modeling method for modeling an object from the modeling material using the modeling system provided by the first or second aspect.

[0012] According to a ninth aspect, there is provided a molding system comprising: a molding device that sequentially molds multiple structural layers on a mounting surface; and a control device that controls the molding device, wherein the molding device comprises an irradiation optical system that irradiates a molding beam; a material supply member that supplies molding material to a molten pool formed by irradiating the molding beam; and a distance information acquisition device that acquires distance information regarding the distance between the structural layer molded by irradiating the molding beam from the irradiation optical system and the supply of the molding material from the material supply member and the material supply member, and the control device controls the molding device to switch between a first condition in which the ratio of the increase in the amount of molding material fed to the molten pool to the increase in the distance is a first ratio, and a second condition in which the ratio of the increase in the amount of feeding to the increase in the distance is a second ratio that is greater than the first ratio, and controls the molding device to switch from molding under the first condition to molding under the second condition when a distance difference regarding the difference between the distance and a target value exceeds a predetermined threshold based on the distance information acquired by the distance information acquisition device.

[0013] According to a tenth aspect, there is provided a control device for controlling a molding device that sequentially molds multiple structural layers, the molding device comprising an irradiation optical system that irradiates a molding beam, a material supply member that supplies molding material to a molten pool formed by irradiating the molding beam, and a distance information acquisition device that acquires distance information regarding the distance between the structural layer molded by irradiating the molding beam from the irradiation optical system and the material supply member and the material supply member, the control device controls the molding device to switch between a first condition in which the ratio of the increase in the amount of molding material input into the molten pool to the increase in the distance is a first ratio, and a second condition in which the ratio of the increase in the input amount to the increase in the distance is a second ratio that is greater than the first ratio, and a control device that controls the molding device so as to switch from molding under the first condition to molding under the second condition when the distance difference regarding the difference between the distance and a target value exceeds a predetermined threshold based on the distance information acquired by the distance information acquisition device.

[0014] According to an eleventh aspect, there is provided a control method for controlling a molding device that sequentially molds multiple structural layers, the molding device comprising an irradiation optical system that irradiates a molding beam, a material supply member that supplies molding material to a molten pool formed by irradiating the molding beam, and a distance information acquisition device that acquires distance information regarding the distance between the structural layer molded by irradiating the molding beam from the irradiation optical system and the supply of the molding material from the material supply member and the material supply member, the control method including switching between a first condition in which the ratio of the increase in the amount of molding material input into the molten pool to the increase in the distance is a first ratio, and a second condition in which the ratio of the increase in the input amount to the increase in the distance is a second ratio greater than the first ratio, and switching from molding under the first condition to molding under the second condition when, based on the distance information acquired by the distance information acquisition device, a distance difference regarding the difference between the distance and a target value exceeds a predetermined threshold.

[0015] According to a twelfth aspect, there is provided a computer program for causing a computer to execute the control method provided by the eleventh aspect.

[0016] According to a thirteenth aspect, there is provided a modeling method for modeling an object from the modeling material using the modeling system provided in the ninth aspect.

[0017] According to a fourteenth aspect, a manufacturing method is provided that includes a manufacturing apparatus that sequentially manufactures a plurality of structural layers, and a control device that controls the manufacturing apparatus, wherein the manufacturing apparatus includes an irradiation optical system that irradiates a manufacturing beam, a material supply member that supplies a manufacturing material to a molten pool formed by irradiation of the manufacturing beam, a distance information acquisition device that acquires distance information regarding the distance between the structural layer manufactured by irradiation of the manufacturing beam from the irradiation optical system and supply of the manufacturing material from the material supply member and the material supply member, and a distance information acquisition device that moves at least one of the material supply member and a manufactured object including the manufactured structural layer so as to change the distance. and a moving device configured to move the material supply member and the object by a first distance, and the control device controls the modeling device so that, each time the structural layer is formed, the modeling device performs a first modeling operation to newly model the structural layer after moving either the material supply member or the object by a first distance, and if the difference between the position of the structural layer and a desired position after the first modeling operation exceeds a predetermined threshold, the control device controls the modeling device so that, each time the structural layer is formed, the control device controls the modeling device so that, after moving the material supply member and the object by a second distance shorter than the first distance, the control device performs a second modeling operation to newly model the structural layer.

[0018] According to a fifteenth aspect, there is provided a control device for controlling a modeling device that sequentially models a plurality of structural layers, the modeling device including: an irradiation optical system that irradiates a modeling beam; a material supply member that supplies a modeling material to a molten pool formed by irradiation of the modeling beam; a distance information acquisition device that acquires distance information regarding the distance between the material supply member and a structural layer modeled by irradiation of the modeling beam from the irradiation optical system and supply of the modeling material from the material supply member; and a movement device that moves at least one of the material supply member and a model including the already-modeled structural layer so as to change the distance. and a control device that controls the molding device so that, each time the structural layer is formed, the control device controls the molding device to move either the material supply member or the molded object a first distance away and then perform a first molding operation to newly mold the structural layer, and if the difference between the position of the structural layer and the desired position after the first molding operation is performed exceeds a predetermined threshold, the control device controls the molding device so that, each time the structural layer is formed, the control device controls the molding device to move the material supply member and the molded object a second distance away, which is less than the first distance, and then perform a second molding operation to newly mold the structural layer.

[0019] According to a sixteenth aspect, there is provided a control method for controlling a modeling apparatus that sequentially models a plurality of structural layers, the modeling apparatus including: an irradiation optical system that irradiates a modeling beam; a material supply member that supplies a modeling material to a molten pool formed by irradiation of the modeling beam; a distance information acquisition device that acquires distance information regarding the distance between the material supply member and a structural layer modeled by irradiation of the modeling beam from the irradiation optical system and supply of the modeling material from the material supply member; and a movement device that moves at least one of the material supply member and a model including the already-modeled structural layer so as to change the distance. The control method includes controlling the modeling device to perform a first modeling operation to newly model the structural layer after separating either the material supply member or the modeled object by a first distance each time the structural layer is formed, and if the difference between the position of the structural layer and the desired position after the first modeling operation is performed exceeds a predetermined threshold, controlling the modeling device to perform a second modeling operation to newly model the structural layer after separating the material supply member and the modeled object by a second distance less than the first distance each time the structural layer is formed.

[0020] According to a seventeenth aspect, there is provided a computer program for causing a computer to execute the control method provided by the sixteenth aspect.

[0021] According to an eighteenth aspect, there is provided a modeling method for modeling an object from the modeling material using the modeling system provided in the fourteenth aspect.

[0022] The functions and other advantages of the present invention will become apparent from the following detailed description of the preferred embodiments.

[0023] FIG. 1 is a cross-sectional view showing the overall configuration of a modeling system according to this embodiment. FIG. 2 is a cross-sectional view showing the configuration of a modeling device according to this embodiment. FIG. 3 is a block diagram showing the configuration of a modeling device according to this embodiment. FIG. 4 is a cross-sectional view showing the supply paths of modeling material supplied from each of a plurality of material nozzles. FIG. 5 shows an example of a molten pool image. FIG. 6 is a block diagram showing the configuration of a control device according to this embodiment. FIG. 7 shows an example of processing path information. FIGS. 8(a) to 8(e) are cross-sectional views showing the state when a modeling light is irradiated onto a certain area on a workpiece and modeling material is supplied. FIGS. 9(a) to 9(c) are cross-sectional views showing the process of forming a three-dimensional structure. FIG. 10 is a cross-sectional view showing the positional relationship between a material nozzle and a modeling surface. FIG. 11 is a graph showing the relationship between the nozzle distance and the amount of modeling material supplied to the molten pool and the layer thickness of the structural layer. FIG. 12 is a graph showing the relationship between the nozzle distance and the layer thickness of the structural layer. Each of Figures 13(a) to 13(h) shows an example of a modeling operation in which multiple structural layers are sequentially formed using the self-alignment function. Each of Figures 14(a) to 14(d) shows an example of a modeling operation in which multiple structural layers are sequentially formed using the self-alignment function. Figure 15 is a graph showing the relationship between the nozzle distance and the layer thickness of the structural layer. Each of Figures 16(a) to 16(h) shows an example of a modeling operation in which multiple structural layers are sequentially formed. Each of Figures 17(a) to 17(d) shows an example of a modeling operation in which multiple structural layers are sequentially formed. Figure 18(a) is a graph showing the relationship between the nozzle distance and the layer thickness of the structural layer, and Figure 18(b) is a graph showing the relationship between the nozzle distance and the material input amount of the modeling material injected into the molten pool. Figure 19 is a graph showing the relationship between the nozzle distance and the layer thickness of the structural layer. Figure 20 is a graph showing the relationship between the nozzle distance and the material input amount of the modeling material injected into the molten pool. Fig. 21 is a flowchart showing the flow of a modeling operation including a modeling mode switching operation. Fig. 22 is a graph showing the relationship between the nozzle distance and the layer thickness of the structure layer. Fig. 23(a) to Fig. 23(i) each show an example of a modeling operation in which a plurality of structure layers are sequentially modeled. Fig. 24(a) to Fig. 24(b) each show an example of a modeling operation in which a plurality of structure layers are sequentially modeled.Fig. 25 shows a first example of machining path information in the first modified example. Fig. 26 shows a second example of machining path information in the first modified example. Fig. 27 is a flowchart showing a flow of a modeling operation including a modeling mode switching operation in the second modified example.

[0024] Hereinafter, with reference to the drawings, embodiments of a modeling system, a control device, a control circuit, a control method, a computer program, and a modeling method will be described. Hereinafter, embodiments of a modeling system, a control device, a control circuit, a control method, a computer program, and a modeling method will be described using a modeling system SYS capable of modeling a model by performing additive processing. In particular, below, embodiments of a modeling system, a control device, a control circuit, a control method, a computer program, and a modeling method will be described using a modeling system SYS capable of modeling a model by performing additive processing based on laser metal deposition (LMD). Additive processing based on laser metal deposition is additive processing that melts a modeling material M supplied to a workpiece W with modeling light EL (i.e., an energy beam in the form of light) to form a model that is integrated with the workpiece W or that can be separated from the workpiece W.

[0025] In the following description, the positional relationships of the various components constituting the modeling system SYS will be described using an XYZ Cartesian coordinate system defined by mutually orthogonal X, Y, and Z axes. For ease of explanation, the X-axis direction and the Y-axis direction are each assumed to be horizontal (i.e., a predetermined direction within a horizontal plane), and the Z-axis direction is assumed to be vertical (i.e., a direction perpendicular to the horizontal plane, essentially the up-down direction or the direction of gravity). Furthermore, the rotation directions around the X-axis, Y-axis, and Z-axis (in other words, the tilt directions) are referred to as the θX direction, θY direction, and θZ direction, respectively. Here, the Z-axis direction may be the direction of gravity. Furthermore, the XY plane may be assumed to be horizontal.

[0026] (1) Configuration of Modeling System SYS First, the configuration of the modeling system SYS of this embodiment will be described.

[0027] (1-1) Overall Configuration of Modeling System SYS First, the overall configuration of the modeling system SYS of this embodiment will be described with reference to Fig. 1. Fig. 1 is a cross-sectional view showing an example of the structure of the modeling system SYS of this embodiment.

[0028] As shown in FIG. 1 , the modeling system SYS includes a modeling apparatus 1 and a control device 2 .

[0029] The modeling apparatus 1 is capable of modeling a model. In particular, the modeling apparatus 1 is capable of modeling a model under the control of the control device 2.

[0030] The modeling apparatus 1 is capable of forming a modeled object that is integrated with (or separable from) the workpiece W by performing additive processing on the workpiece W. In this case, the additive processing performed on the workpiece W corresponds to processing that adds the modeled object that is integrated with (or separable from) the workpiece W to the workpiece W. For this reason, the modeling apparatus 1 may be referred to as a processing apparatus, and the modeling system SYS may be referred to as a processing system. Note that the modeled object in this embodiment may refer to any object that is modeled by the modeling system SYS. For example, the modeling system SYS may form a three-dimensional structure ST (that is, a three-dimensional structure that has a size in all three-dimensional directions, a solid object, in other words, a structure that has a size in the X-axis direction, Y-axis direction, and Z-axis direction) as an example of the modeled object.

[0031] When the workpiece W is the stage 131 described below, the modeling system SYS can perform additional processing on the stage 131. When the workpiece W is a mounted object, which is an object placed on the stage 131, the modeling system SYS can perform additional processing on the mounted object. The mounted object placed on the stage 131 may be another three-dimensional structure ST (i.e., an existing structure) that has been modeled by the modeling system SYS. Note that FIG. 1 shows an example in which the workpiece W is an existing structure placed on the stage 131. Also, the following description will be given using an example in which the workpiece W is an existing structure placed on the stage 131.

[0032] The workpiece W may be a product that has a missing portion and needs to be repaired. In this case, the modeling system SYS may perform repair processing to repair the product that needs to be repaired by performing additional processing to form a shaped object to fill the missing portion. In other words, the additional processing performed by the modeling system SYS may include additional processing to add a shaped object to the workpiece W to fill the missing portion.

[0033] As described above, the modeling system SYS is capable of performing additive processing based on the laser build-up welding method. In other words, the modeling system SYS can also be considered a 3D printer that processes objects using additive manufacturing technology. The additive manufacturing technology may also be referred to as rapid prototyping, rapid manufacturing, or additive manufacturing. The laser build-up welding method (LMD) may also be referred to as directed energy deposition (DED).

[0034] The modeling system SYS using the additive manufacturing technology sequentially forms multiple structural layers SL (see FIG. 7 , etc., described later) on the workpiece W (specifically, on the surface of the workpiece W). As a result, a three-dimensional structure ST in which multiple structural layers SL are stacked is formed on the workpiece W (specifically, on the surface of the workpiece W). In this case, the modeling system SYS first sets the surface of the workpiece W as the modeling surface MS on which the object is actually formed, and forms the first structural layer SL on the modeling surface MS. Thereafter, the modeling system SYS sets the surface of the first structural layer SL as a new modeling surface MS, and forms the second structural layer SL on the new modeling surface MS. Thereafter, the modeling system SYS repeats the same operation to form a three-dimensional structure ST in which multiple structural layers SL are stacked along the Z-axis direction.

[0035] The modeling system SYS performs additive processing by processing the modeling material M using modeling light EL, which is an energy beam. The modeling material M is a material that can be melted by irradiation with modeling light EL of a predetermined intensity or higher. For example, at least one of a metallic material and a resinous material can be used as the modeling material M. Examples of metallic materials include at least one of a material containing copper, a material containing tungsten, and a material containing stainless steel. However, materials other than metallic materials and resinous materials may also be used as the modeling material M. The modeling material M is a powdered material. In other words, the modeling material M is a powder. However, the modeling material M does not have to be a powder. For example, at least one of a wire-shaped modeling material and a gaseous modeling material may be used as the modeling material M.

[0036] Like the modeling material M, the workpiece W may also be an object containing a material that can be melted by irradiation with modeling light EL of a predetermined intensity or higher. The material of the workpiece W may be the same as or different from the modeling material M. For example, at least one of a metallic material and a resinous material can be used as the material of the workpiece W. Examples of metallic materials include at least one of a material containing copper, a material containing tungsten, and a material containing stainless steel. However, materials other than metallic materials and resinous materials may also be used as the material of the workpiece W.

[0037] The control device 2 controls the modeling apparatus 1. Specifically, the control device 2 controls the operation of the modeling apparatus 1. For example, the control device 2 may control the modeling apparatus 1 to model a structure layer SL. For example, the control device 2 may control the modeling apparatus 1 to model a plurality of structure layers SL in sequence. For example, the control device 2 may control the modeling apparatus 1 to model a three-dimensional structure ST having a desired shape. For example, the control device 2 may control modeling by the modeling apparatus 1.

[0038] (1-2) Configuration of the Modeling Apparatus 1 Next, the configuration of the modeling apparatus 1 of this embodiment will be described with reference to Fig. 2 and Fig. 3. Fig. 2 is a cross-sectional view schematically showing the configuration of the modeling system SYS of this embodiment. Fig. 3 is a block diagram showing the configuration of the modeling apparatus 1 of this embodiment.

[0039] 2 and 3 , the modeling system SYS includes a material supply source 11, a modeling unit 12, a stage unit 13, a light source 14, a gas supply device 15, a housing 16, and an imaging device 17. At least a portion of each of the modeling unit 12, the stage unit 13, and the imaging device 17 is housed in a chamber space 163IN inside the housing 16.

[0040] The material supply source 11 supplies the modeling unit 12 with the modeling material M. The material supply source 11 supplies a desired amount of modeling material M according to the required amount so that the amount of modeling material M required per unit time to model the three-dimensional structure ST is supplied to the modeling unit 12.

[0041] The modeling unit 12 processes the modeling material M supplied from the material supply source 11 to model a three-dimensional structure ST. In order to model the three-dimensional structure ST, the modeling unit 12 includes a modeling head 121 and a head drive system 122. The modeling head 121 further includes an irradiation optical system 1211 and a material nozzle 1212. The modeling head 121 and the head drive system 122 are housed in a chamber space 163IN. However, at least a portion of the modeling head 121 and the head drive system 122 may be disposed in an external space 164OUT, which is a space outside the housing 16. The external space 164OUT may be a space accessible to an operator of the modeling system SYS.

[0042] The irradiation optical system 1211 is an optical system (optical member) for emitting the shaping light EL. Specifically, the irradiation optical system 1211 is optically connected to the light source 14 that emits the shaping light EL via an optical transmission member 141 that includes at least one of an optical fiber, a light pipe, or the like. The irradiation optical system 1211 emits the shaping light EL propagated from the light source 14 via the optical transmission member 141. The irradiation optical system 1211 irradiates the shaping light EL downward (i.e., toward the -Z side) from the irradiation optical system 1211. Therefore, the optical axis AX of the irradiation optical system 1211 may be an axis along the Z axis.

[0043] A stage 131 is disposed below the irradiation optical system 1211. When a workpiece W is placed on the stage 131, the irradiation optical system 1211 irradiates the workpiece W with the modeling light EL. Specifically, the irradiation optical system 1211 can irradiate the modeling light EL toward a target irradiation area EA that is set on or near the workpiece W as an area to be irradiated (typically, focused) with the modeling light EL. In other words, the irradiation optical system 1211 irradiates the modeling light EL toward the position where the target irradiation area EA is set. Furthermore, under the control of the control device 2, the state of the irradiation optical system 1211 can be switched between a state in which the modeling light EL is irradiated toward the target irradiation area EA and a state in which the modeling light EL is not irradiated toward the target irradiation area EA. Note that the direction of the modeling light EL emitted from the irradiation optical system 1211 is not limited to directly downward (i.e., aligned with the −Z-axis direction) and may be, for example, a direction inclined by a predetermined angle with respect to the Z-axis.

[0044] The material nozzle 1212 supplies (e.g., ejects, jets, spouts, or sprays) the modeling material M. For this reason, the material nozzle 1212 may also be referred to as a material supply member or a supply device (material supply device). The material nozzle 1212 is physically connected to the material supply source 11, which is a supply source of the modeling material M, via the supply pipe 111 and the mixer 112. The material nozzle 1212 supplies the modeling material M supplied from the material supply source 11 via the supply pipe 111 and the mixer 112. The material nozzle 1212 may pressure-feed the modeling material M supplied from the material supply source 11 via the supply pipe 111. That is, the modeling material M from the material supply source 11 and a conveying gas (i.e., a pressure-feed gas, for example, an inert gas such as nitrogen or argon) may be mixed in the mixer 112 and then pressure-feed to the material nozzle 1212 via the supply pipe 111. As a result, the material nozzle 1212 supplies the modeling material M together with the conveying gas. The transport gas may be, for example, a purge gas supplied from the gas supply device 15. However, the transport gas may be a gas supplied from a gas supply source different from the gas supply device 15.

[0045] The modeling head 121 includes a plurality of material nozzles 1212. As shown in Figure 4, which is a cross-sectional view showing the supply paths of the modeling material M supplied from each of the plurality of material nozzles 1212, the plurality of material nozzles 1212 are aligned so that the supply paths of the modeling material M from the plurality of material nozzles 1212 intersect in a concentration area CA. In other words, the plurality of material nozzles 1212 are aligned so that the modeling material M supplied from the plurality of material nozzles 1212 is supplied toward the concentration area CA. The concentration area CA may also be referred to as a concentration space.

[0046] Because the modeling material M supplied from the multiple material nozzles 1212 is supplied toward the concentration area CA, the distribution density of the modeling material M in the concentration area CA is higher than the distribution density of the modeling material M in an area other than the concentration area CA (an area outside the concentration area CA), as shown on the right side of FIG. 4 . For example, on the optical axis AX of the irradiation optical system 1211, the distribution density of the modeling material M in the concentration area CA is higher than the distribution density of the modeling material M in an area other than the concentration area CA. Furthermore, as shown in FIG. 4 , even within the concentration area CA, the distribution density of the modeling material M increases as one approaches the material concentration point CP, where the distribution density of the modeling material M is highest. Note that the material concentration point CP may be a point where imaginary axes extending in the supply direction of the modeling material M from the multiple material nozzles 1212 intersect. The material concentration point CP may also be referred to as a material concentration position or a material concentration spot.

[0047] The higher the distribution density of the building material M on the building surface MS, the thicker the layer thickness dz, which is the thickness (height) of the structure layer SL built on the building surface MS. Therefore, as shown on the right side of Fig. 4, the layer thickness dz of the structure layer SL built on the building surface MS included in the concentration area CA is thicker than the layer thickness dz of the structure layer SL built on the building surface MS included in an area different from the concentration area CA (an area outside the concentration area CA). Furthermore, as shown in Fig. 4, the closer the building surface MS is to the material concentration point CP, the thicker the layer thickness dz of the structure layer SL built on the building surface MS.

[0048] The focusing position in the Z-axis direction where the shaping light EL is focused may coincide with the material concentration point CP, or may be spaced apart from the material concentration point CP.

[0049] In the example shown in FIG. 4 , the material concentration point CP is located below the surface (particularly the upper surface; the same applies hereinafter in this paragraph) of the workpiece W (i.e., at a position away from the surface of the workpiece W on the −Z side). In other words, in this embodiment, the modeling system SYS performs additive processing on the workpiece W in a state in which the modeling material M supplied from the material nozzle 1212 reaches the surface of the workpiece W (or the modeling surface MS described later) before actually reaching the material concentration point CP. In this embodiment, the modeling system SYS performs additive processing on the workpiece W in a state in which the material concentration point CP is located below the surface of the workpiece W (or the modeling surface MS described later) (i.e., the modeling surface MS is located between the material concentration point CP and the material nozzle 1212). However, the material concentration point CP may also be located on the surface of the workpiece W. In other words, the modeling system SYS may perform additive processing on the workpiece W in a state in which the modeling material M supplied from the material nozzle 1212 reaches the surface of the workpiece W (or the modeling surface MS described later) at the same time as it reaches the material concentration point CP. In other words, the modeling system SYS may perform additive processing on the workpiece W in a state where the material concentration point CP is located on the surface of the workpiece W (or on the modeling surface MS, which will be described later). Alternatively, the material concentration point CP may be located above the surface of the workpiece W (i.e., at a position away from the surface of the workpiece W on the +Z side). In other words, the modeling system SYS may perform additive processing on the workpiece W in a state where the modeling material M supplied from the material nozzle 1212 reaches the modeling surface MS after actually reaching the material concentration point CP. In other words, the modeling system SYS may perform additive processing on the workpiece W in a state where the material concentration point CP is located above the modeling surface MS (i.e., the material concentration point CP is located between the modeling surface MS and the material nozzle 1212).

[0050] The material nozzle 1212 supplies the modeling material M downward (i.e., toward the -Z side). A stage 131 is disposed below the material nozzle 1212. When a workpiece W is mounted on the stage 131, the material nozzle 1212 supplies the modeling material M toward the workpiece W or the vicinity of the workpiece W. The direction of travel of the modeling material M supplied from the material nozzle 1212 is inclined at a predetermined angle (for example, an acute angle) with respect to the Z-axis direction. In other words, the material nozzle 1212 supplies the modeling material M from an oblique direction with respect to the Z-axis direction. Here, the supply direction of the modeling material M supplied from the material nozzle 1212 may be referred to as a direction including a Z-axis component. However, the direction of travel of the modeling material M supplied from the material nozzle 1212 may also be along the Z-axis.

[0051] The material nozzle 1212 supplies the modeling material M toward a target irradiation area EA onto which the modeling light EL from the irradiation optical system 1211 is irradiated. Therefore, the material nozzle 1212 and the irradiation optical system 1211 are aligned so that a target supply area MA, which is set on or near the workpiece W as an area onto which the material nozzle 1212 supplies the modeling material M, coincides with (or at least partially overlaps with) the target irradiation area EA. In this case, the modeling material M is supplied to the irradiation position of the modeling light EL on the workpiece W, and the modeling material M supplied from the material nozzle 1212 is irradiated with the modeling light EL emitted by the irradiation optical system 1211. As a result, the modeling material M melts. That is, a molten pool MP containing the molten modeling material M is formed on the workpiece W.

[0052] Since a molten pool MP is formed at the irradiation position of the modeling light EL, the material nozzle 1212 may be considered to supply the modeling material M to the molten pool MP formed by the modeling light EL emitted from the irradiation optical system 1211. Alternatively, for example, the modeling device 1 may melt the modeling material M from the material nozzle 1212 using the irradiation optical system 1211 before the modeling material M reaches the workpiece W, and then adhere the molten modeling material M to the workpiece W.

[0053] The head drive system 122 moves (i.e., moves) the object-forming head 121. For this reason, the head drive system 122 may be referred to as a movement device. The head drive system 122 moves the object-forming head 121, for example, along at least one of the X-axis, Y-axis, Z-axis, θX direction, θY direction, and θZ direction. Because the object-forming head 121 is equipped with an irradiation optical system 1211 and a material nozzle 1212, when the head drive system 122 moves the object-forming head 121, the irradiation optical system 1211 and the material nozzle 1212 equipped in the object-forming head 121 also move. For this reason, the head drive system 122 may be considered a drive system that moves the irradiation optical system 1211 and the material nozzle 1212.

[0054] When the head drive system 122 moves the object-forming head 121, the relative positional relationships between the object-forming head 121 and the stage 131, the workpiece W placed on the stage 131, and the object already formed on the workpiece W change in the direction of movement of the object-forming head 121. In other words, the relative positional relationships between the irradiation optical system 1211 and the material nozzle 1212 provided in the object-forming head 121 and the stage 131, the workpiece W, and the object change in the direction of movement of the object-forming head 121. For this reason, the head drive system 122 may be considered to function as a position changing device (drive device) that can change the relative positional relationships between the object-forming head 121 (the irradiation optical system 1211 and the material nozzle 1212), the stage 131, the workpiece W, and the object. Furthermore, when the relative positional relationships between the modeling head 121 (the irradiation optical system 1211 and the material nozzle 1212) and the stage 131, the workpiece W, and the modeled object change, the target irradiation position on the modeling surface MS to which the modeling light EL should be irradiated (i.e., the target irradiation area EA described above) and the target supply position on the modeling surface MS to which the modeling material M should be supplied (i.e., the target supply area MA described above) move relative to the modeling surface MS. Therefore, the head drive system 122 can be considered to function as a moving device that moves the target irradiation area EA and the target supply area MA relative to the modeling surface MS.

[0055] In this embodiment, the head drive system 122 may change the distance between the material nozzle 1212 and the printing surface MS (i.e., the spacing between the material nozzle 1212 and the printing surface MS in the Z-axis direction) by moving the printing head 121 (particularly, moving the material nozzle 1212) along the Z-axis. In the following description, for convenience of explanation, the distance between the material nozzle 1212 and the printing surface MS is referred to as the nozzle distance D (see FIG. 4 ). Therefore, the head drive system 122 may be considered to function as a distance change device that changes the nozzle distance D. As described above, because the surface of the workpiece W or the surface of a printed structure layer SL (particularly, the uppermost structure layer SL) is used as the printing surface MS, the nozzle distance D is equivalent to the distance between the material nozzle 1212 and the workpiece W or the printed structure layer SL (particularly, the uppermost structure layer SL) that is set as the printing surface MS. In this case, the head drive system 122 may be considered to change the distance between the material nozzle 1212 and the workpiece W or the already-formed structure layer SL (particularly the uppermost structure layer SL) set as the build surface MS by moving the build head 121 (particularly, moving the material nozzle 1212) along the Z axis. Furthermore, changing the nozzle distance D changes the distance (specifically, the distance along the Z axis) between the build surface MS and the concentration area CA and material concentration point CP, where the build material M supplied from the material nozzle 1212 is concentrated. Therefore, the head drive system 122 may be considered to function as a concentration area changing device that changes each of the concentration area CA and material concentration point CP (specifically, changes the positions of the concentration area CA and material concentration point CP, in other words, changes the distance between each of the concentration area CA and material concentration point CP and the build surface MS). The technical reasons for changing the nozzle distance D (and thereby changing each of the concentration area CA and material concentration point CP) will be described in detail later.

[0056] Note that the modeling unit 12 may be provided with a first drive system for moving the irradiation optical system 1211 and a second drive system for moving the material nozzle 1212, separately, in addition to or instead of the drive system for moving both the irradiation optical system 1211 and the material nozzle 1212. In this case, the first drive system does not need to move the material nozzle 1212, and the second drive system does not need to move the irradiation optical system 1211.

[0057] The stage unit 13 includes a stage 131 and a stage drive system 132 .

[0058] The workpiece W is placed on the stage 131. For this reason, the stage 131 may be referred to as a mounting device. Specifically, the workpiece W is placed on a stage mounting surface 1311, which is one surface of the stage 131 (e.g., the upper surface facing the +Z side). The stage 131 is capable of supporting the workpiece W placed on the stage 131. The stage 131 may be capable of holding the workpiece W placed on the stage 131. In this case, the stage 131 may be equipped with at least one of a mechanical chuck, an electrostatic chuck, a vacuum chuck, etc. to hold the workpiece W. Alternatively, the stage 131 may not be capable of holding the workpiece W placed on the stage 131. In this case, the workpiece W may be placed on the stage 131 in a clampless manner. Furthermore, the workpiece W may be attached to a holder, or the holder to which the workpiece W is attached may be placed on the stage 131. The irradiation optical system 1211 emits the modeling light EL for at least a portion of the period during which the workpiece W is placed on the stage 131. Furthermore, the material nozzle 1212 supplies the modeling material M for at least a portion of the period during which the workpiece W is placed on the stage 131.

[0059] The stage drive system 132 moves (i.e., moves) the stage 131. For this reason, the stage drive system 132 may be referred to as a movement device. The stage drive system 132 moves the stage 131, for example, along at least one of the X-axis, Y-axis, Z-axis, θX direction, θY direction, and θZ direction. When the stage drive system 132 moves the stage 131, the workpiece W placed on the stage 131 and the object that has already been formed on the workpiece W also move. For this reason, the stage drive system 132 may be considered to be a drive system that moves the workpiece W and the object.

[0060] When the stage drive system 132 moves the stage 131, the relative positional relationships between the modeling head 121 (the irradiation optical system 1211 and the material nozzle 1212), the stage 131, the workpiece W placed on the stage 131, and the object already formed on the workpiece W change in the movement direction of the stage 131. For this reason, the stage drive system 132 may be considered to function as a position changing device (drive device) that can change the relative positional relationships between the modeling head 121 (the irradiation optical system 1211 and the material nozzle 1212), the stage 131, the workpiece W, and the object. Furthermore, when the relative positional relationships between the modeling head 121 (the irradiation optical system 1211 and the material nozzle 1212) and the stage 131, the workpiece W, and the modeled object change, the target irradiation position on the modeling surface MS to which the modeling light EL should be irradiated (i.e., the target irradiation area EA described above) and the target supply position on the modeling surface MS to which the modeling material M should be supplied (i.e., the target supply area MA described above) move relative to the modeling surface MS. Therefore, the stage drive system 132 can be considered to function as a moving device that moves the target irradiation area EA and the target supply area MA relative to the modeling surface MS.

[0061] In this embodiment, the stage drive system 132 may change the distance between the material nozzle 1212 and the build surface MS (i.e., the nozzle distance D) by moving the stage 131 along the Z axis. Therefore, the stage drive system 132 may be considered to function as a distance changer that changes the nozzle distance D. As described above, since the surface of the workpiece W or the surface of a built structure layer SL (particularly, the surface of the uppermost structure layer SL) is used as the build surface MS, the stage drive system 132 may be considered to change the distance between the material nozzle 1212 and the workpiece W or the built structure layer SL (particularly, the uppermost structure layer SL) that is set as the build surface MS by moving the stage 131 along the Z axis. Furthermore, when the nozzle distance D changes, the distance (specifically, the distance along the Z axis) between the build surface MS and the concentration area CA and material concentration point CP where the build material M supplied from the material nozzle 1212 is concentrated changes. Therefore, the stage drive system 132 may be considered to function as a concentration area changing device that changes each of the concentration area CA and the material concentration point CP (specifically, changes the positions of each of the concentration area CA and the material concentration point CP; in other words, changes the distance between each of the concentration area CA and the material concentration point CP and the manufacturing surface MS).

[0062] The light source 14 emits, for example, at least one of infrared light, visible light, and ultraviolet light as the shaping light EL. However, other types of light may be used as the shaping light EL. The shaping light EL may include multiple pulsed lights (i.e., multiple pulse beams). The shaping light EL may include continuous light (CW: Continuous Wave). The shaping light EL may be laser light. In this case, the light source 14 may include a laser light source (for example, a semiconductor laser such as a laser diode (LD: Laser Diode)). The laser light source may be a fiber laser, a CO ２ The light source 14 may include at least one of a laser, a YAG laser, an excimer laser, etc. However, the shaping light EL does not have to be laser light. The light source 14 may include any light source (for example, at least one of an LED (Light Emitting Diode), a discharge lamp, etc.).

[0063] The gas supply device 15 is a supply source of purge gas for purging the chamber space 163IN. The purge gas includes an inert gas. Examples of the inert gas include at least one of nitrogen gas and argon gas. The gas supply device 15 is connected to the chamber space 163IN via a supply port 162 formed in a partition member 161 of the housing 16 and a supply pipe 151 connecting the gas supply device 15 to the supply port 162. The gas supply device 15 supplies purge gas to the chamber space 163IN via the supply pipe 151 and the supply port 162. As a result, the chamber space 163IN becomes a space purged with the purge gas. The purge gas supplied to the chamber space 163IN may be discharged from an exhaust port (not shown) formed in the partition member 161. The gas supply device 15 may be a cylinder containing an inert gas. When the inert gas is nitrogen gas, the gas supply device 15 may be a nitrogen gas generator that generates nitrogen gas using air as a raw material.

[0064] When the material nozzle 1212 supplies the modeling material M together with the purge gas, the gas supply device 15 may supply the purge gas to the mixer 112 to which the modeling material M from the material supply source 11 is supplied in addition to the chamber space 163IN. Specifically, the gas supply device 15 may be connected to the mixer 112 via a supply pipe 152 connecting the gas supply device 15 and the mixer 112. As a result, the gas supply device 15 supplies the purge gas to the mixer 112 via the supply pipe 152. In this case, the modeling material M from the material supply source 11 may be supplied (specifically, pressure-fed) toward the material nozzle 1212 through the supply pipe 111 by the purge gas supplied from the gas supply device 15 via the supply pipe 152. In other words, the gas supply device 15 may be connected to the material nozzle 1212 via the supply pipe 152, the mixer 112, and the supply pipe 111. In this case, the material nozzle 1212 supplies the build material M along with a purge gas for pumping the build material M.

[0065] The housing 16 is a housing device that houses at least a portion of each of the modeling unit 12 and the stage unit 13 in a chamber space 163IN, which is the internal space of the housing 16. The housing 16 includes a partition member 161 that defines the chamber space 163IN. The partition member 161 is a member that separates the chamber space 163IN from an external space 164OUT of the housing 16. The partition member 161 faces the chamber space 163IN via its inner wall surface 1611 and faces the external space 164OUT via its outer wall surface 1612. In this case, the space surrounded by the partition member 161 (more specifically, the space surrounded by the inner wall surface 1611 of the partition member 161) becomes the chamber space 163IN. The partition member 161 may be provided with an openable / closable door. This door may be opened when placing the workpiece W on the stage 131. The door may be opened when removing the workpiece W and / or the three-dimensional structure ST from the stage 131. The door may be closed while the molding operation and the processing operation are being performed. An observation window (not shown) for visually observing the chamber space 163IN from the external space 164OUT of the housing 16 may be formed in the partition member 161.

[0066] The imaging device 17 is a camera capable of capturing an image of an object to be imaged. The imaging device 17 may be attached to the object-forming head 121. In this case, the positional relationship between the imaging device 17 and the object-forming head 121 may be fixed. The positional relationship between the imaging device 17 and the irradiation optical system 1211 and the material nozzle 1212 provided in the object-forming head 121 may also be fixed. The head drive system 122 may move the imaging device 17 together with the object-forming head 121 (i.e., the irradiation optical system 1211 and the material nozzle 1212).

[0067] However, the imaging device 17 does not have to be attached to the object-forming head 121. In this case, the imaging device 17 may be disposed at a position that satisfies the condition that the positional relationship between the imaging device 17 and the object-forming head 121 is fixed. The imaging device 17 may be disposed at a position that satisfies the condition that the positional relationship between the imaging device 17 and the irradiation optical system 1211 and the material nozzle 1212 provided in the object-forming head 121 is fixed. The imaging device 17 may be disposed at a position that satisfies the condition that the imaging device 17 moves together with the object-forming head 121 (i.e., together with the irradiation optical system 1211 and the material nozzle 1212).

[0068] In this embodiment, an example will be described in which the imaging device 17 images a printing surface MS, which is an example of an imaging target. In this case, the imaging device 17 may image the printing surface MS. Note that, as described above, the surface of the workpiece W or the surface of the already-formed structure layer SL (particularly, the uppermost structure layer SL) is used as the printing surface MS, so the imaging device 17 may image the workpiece W or the already-formed structure layer SL (particularly, the uppermost structure layer SL).

[0069] The imaging device 17 may capture an image of the molten pool MP formed on the build surface MS by capturing an image of the build surface MS. In this case, the imaging device 17 may capture an image of the build surface MS during at least a portion of the period during which the molten pool MP is formed on the build surface MS.

[0070] The imaging device 17 may image the build surface MS (particularly, the molten pool MP) from a direction other than the Z-axis direction. In this case, the imaging device 17 may be positioned so that the optical axis of the imaging device 17 (e.g., the optical axis of the objective optical system provided in the imaging device 17) is an axis extending along a direction other than the Z-axis direction. In other words, the optical axis of the objective optical system provided in the imaging device 17 may extend in a direction other than the optical axis of the irradiation optical system 1211. Specifically, the imaging device 17 may image the build surface MS (particularly, the molten pool MP) from a direction inclined with respect to the Z-axis direction. In other words, the imaging device 17 may image the build surface MS (particularly, the molten pool MP) from a direction oblique with respect to the Z-axis direction. In this case, the imaging device 17 may be positioned so that the optical axis of the imaging device 17 (e.g., the optical axis of the objective optical system provided in the imaging device 17) is an axis extending along a direction inclined with respect to the Z-axis direction (in other words, a direction oblique with respect to the Z-axis direction).

[0071] The imaging device 17 may capture an image of the build surface MS (particularly, the molten pool MP) and generate an image that includes the build surface MS (particularly, the molten pool MP) as a molten pool image IMG. The imaging device 17 may output the generated molten pool image IMG to the control device 2.

[0072] The weld pool image IMG generated by the imaging device 17 may be used by the control device 2 to control the size of the weld pool MP. That is, the control device 2 may control the size of the weld pool MP based on the weld pool image IMG generated by the imaging device 17. For example, the control device 2 may calculate the size of the weld pool MP based on the weld pool image IMG. For example, the control device 2 may calculate the size of the weld pool MP captured in the weld pool image IMG. The control device 2 may then control the size of the weld pool MP so that the size of the weld pool MP becomes a predetermined target size. For example, if the calculated size of the weld pool MP is smaller than the predetermined target size, the control device 2 may control the size of the weld pool MP so that the size of the weld pool MP becomes larger (resulting in the target size). For example, if the calculated size of the weld pool MP is larger than the predetermined target size, the control device 2 may control the size of the weld pool MP so that the size of the weld pool MP becomes smaller (resulting in the target size). To control the size of the weld pool MP, the control device 2 may control the light source 14 to control the intensity of the shaping light EL. Specifically, the higher the intensity of the shaping light EL, the greater the amount of shaping material M melted on the shaping surface MS. As a result, the size of the molten pool MP containing the molten shaping material M increases. Therefore, if the calculated size of the molten pool MP is smaller than a predetermined target size, the control device 2 may control the light source 14 to increase the intensity of the shaping light EL (resulting in a larger molten pool MP). For example, if the calculated size of the molten pool MP is larger than a predetermined target size, the control device 2 may control the light source 14 to decrease the intensity of the shaping light EL (resulting in a smaller molten pool MP). To control the size of the molten pool MP, the control device 2 may control the light source 14 to control the intensity of the shaping light EL.

[0073] The molten pool image IMG generated by the imaging device 17 may be used by the control device 2 to calculate the distance between the material nozzle 1212 and the build surface MS (i.e., the nozzle distance D). Specifically, as described above, because the imaging device 17 moves along with the material nozzle 1212, a change in the nozzle distance D changes the state of the build surface MS (particularly the state of the molten pool MP) reflected in the molten pool image IMG. In other words, a change in the nozzle distance D causes a positional shift of the molten pool MP in the molten pool image IMG. As an example, as shown in FIG. 5 , which shows an example of a molten pool image IMG, a change in the nozzle distance D changes the position at which the molten pool MP is reflected in the molten pool image IMG. FIG. 5 shows an example in which the position at which the molten pool MP is reflected in the molten pool image IMG moves downward as the nozzle distance D increases. 5 shows an example in which the position where the weld pool MP is captured in the weld pool image IMG moves upward as the nozzle distance D becomes shorter. Therefore, the control device 2 can calculate the nozzle distance D based on the weld pool image IMG. For example, the control device 2 may calculate the nozzle distance D based on the position of the weld pool MP in the weld pool image IMG. In other words, the control device 2 may calculate the nozzle distance D based on the positional deviation of the weld pool MP in the weld pool image IMG. When the weld pool image IMG is used to calculate the nozzle distance D, the imaging device 17 may be considered to function as a distance information acquisition device capable of acquiring distance information related to the nozzle distance D.

[0074] (1-3) Configuration of the Control Device 2 Next, the configuration of the control device 2 of this embodiment will be described with reference to Fig. 6. Fig. 6 is a block diagram showing the configuration of the control device 2 of this embodiment.

[0075] 6 , the control device 2 includes a calculation device 21 and a storage device 22. The control device 2 may further include a communication device 23, an input device 24, and an output device 25. However, the control device 2 does not necessarily have to include at least one of the communication device 23, the input device 24, and the output device 25. The calculation device 21, the storage device 22, the communication device 23, the input device 24, and the output device 25 may be connected via a data bus 26.

[0076] The arithmetic device 21 is hardware including at least a circuit (for example, at least one of an electronic circuit and an electric circuit). Therefore, the arithmetic device 21 may be referred to as a group of circuits (Circuitry). The arithmetic device 21 may be referred to as a control circuit (Control Circuitry). The control device 2 including the arithmetic device 21 may be referred to as a control circuit.

[0077] The arithmetic device 21 includes at least one processor (i.e., one processor or multiple processors) as hardware. The processor may include, for example, a processor conforming to a von Neumann computer architecture. The processor conforming to the von Neumann computer architecture may include at least one of a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit). The processor may include, for example, a processor conforming to a non-von Neumann computer architecture. The processor conforming to the non-von Neumann computer architecture may include at least one of an FPGA (Field Programmable Gate Array) and an ASIC (Application Specific Circuit). The processor may be realized by a group of circuits (e.g., at least one of an electronic circuit and an electric circuit).

[0078] The arithmetic device 21 reads a computer program 221 including at least one of computer program code and computer program instructions. For example, the arithmetic device 21 may read the computer program 221 stored in the storage device 22. For example, the arithmetic device 21 may read the computer program 221 stored in a computer-readable, non-transitory storage medium using a storage medium reading device (not shown) included in the control device 2. The computer program 221 read from the storage medium may be stored in the storage device 22. The arithmetic device 21 may acquire (i.e., download or read) the computer program 221 from a device (not shown) located outside the control device 2 via the communication device 23 (or another communication device). The downloaded computer program 221 may be stored in the storage device 22.

[0079] The arithmetic device 21 executes the loaded computer program 221. As a result, logical functional blocks for executing processing to be performed by the control device 2 (e.g., processing for controlling the operation of the modeling apparatus 1, i.e., a control method) are realized within the arithmetic device 21. In other words, the arithmetic device 21, together with the storage device 22, etc. in which the computer program 221 is recorded (in other words, together with the storage device 22 and the computer program 221 recorded in the storage device 22, etc.), can function as a controller or computer for realizing the logical functional blocks for executing processing to be performed by the control device 2. In other words, the at least one processor included in the arithmetic device 21, the memory (recording medium) included in the storage device 22, etc., and the computer program 221 are configured so that the control device 2 performs processing to be performed by the control device 2.

[0080] The arithmetic device 21 may include a single processor. In this case, the arithmetic device 21 may perform the following operations (e.g., processing for controlling the operation of the modeling system SYS) using the single processor. For example, if the arithmetic device 21 performs a first operation (e.g., a first processing for controlling the operation of the modeling system SYS) and a second operation (e.g., a second processing for controlling the operation of the modeling system SYS), the arithmetic device 21 may perform both the first and second operations using a single processor. Alternatively, the arithmetic device 21 may include multiple processors. In this case, the arithmetic device 21 may perform each of the following operations using any one of the multiple processors. For example, if the arithmetic device 21 includes first and second processors and performs the first and second operations, the arithmetic device 21 may perform each of the first and second operations using any one of the first and second processors. For example, the computing device 21 may perform a first operation using a first processor, may perform a second operation using the first processor, may perform the first operation using a second processor, or may perform the second operation using the second processor.

[0081] The arithmetic device 21 may generate a control signal CS that controls the operation of the modeling apparatus 1 as a result of executing the computer program 221, using logical functional blocks realized within the arithmetic device 21. The arithmetic device 21 may output the generated control signal CS to at least one of the material supply source 11, the modeling unit 12, the stage unit 13, the light source 14, the gas supply device 15, and the imaging device 17 via the communication device 23 described below. At least one of the material supply source 11, the modeling unit 12, the stage unit 13, the light source 14, the gas supply device 15, and the imaging device 17 may operate based on the control signal CS output (generated) by the arithmetic device 21. In other words, the modeling apparatus 1 may perform additional processing on the workpiece W based on the control signal CS output (generated) by the arithmetic device 21.

[0082] A computational model that can be constructed by machine learning may be implemented in the computational device 21 by the computational device executing the computer program 221. An example of a computational model that can be constructed by machine learning is a computational model including a neural network (so-called artificial intelligence (AI)). In this case, learning of the computational model may include learning of parameters of the neural network (e.g., at least one of a weight and a bias). The computational device 21 may control the operation of the modeling device 1 using the computational model. In other words, the operation of controlling the operation of the modeling device 1 may include the operation of controlling the operation of the modeling device 1 using the computational model. Note that a computational model that has been constructed by offline machine learning using training data may be implemented in the computational device 21. Furthermore, the computational model implemented in the computational device 21 may be updated by online machine learning on the computational device 21. Alternatively, the calculation device 21 may control the operation of the modeling device 1 using a calculation model implemented in a device external to the calculation device 21 (i.e., a device provided outside the control device 2) in addition to or instead of the calculation model implemented in the calculation device 21.

[0083] The recording medium for recording the computer program 221 executed by the arithmetic device 21 may be at least one of a CD-ROM, CD-R, CD-RW, flexible disk, MO, DVD-ROM, DVD-RAM, DVD-R, DVD+R, DVD-RW, DVD+RW, and Blu-ray (registered trademark) or other optical disk, a magnetic medium such as a magnetic tape, a magneto-optical disk, a semiconductor memory such as a USB memory, and any other medium capable of storing a program. The recording medium may include a device capable of recording the computer program 221 (for example, a general-purpose device or a dedicated device in which the computer program 221 is implemented in a state in which it can be executed in at least one of the forms of software and firmware). Furthermore, each process or function included in the computer program 221 may be realized by a logical processing block realized within the arithmetic device 21 when the arithmetic device 21 (i.e., processor) executes the computer program 221, or may be realized by hardware such as a predetermined gate array (FPGA (Field Programmable Gate Array), ASIC (Application Specific Integrated Circuit)) provided in the arithmetic device 21, or may be realized in a form that mixes logical processing blocks and partial hardware modules that realize some elements of the hardware.

[0084] The storage device 22 includes at least one memory capable of storing desired data. In other words, the storage device 22 includes at least one memory containing desired data. The memory may be realized by a group of circuits (e.g., at least one of electronic circuits and electric circuits). For example, the storage device 22 may store a computer program 221 executed by the arithmetic device 21. In this case, the storage device 22 (memory) may be used as the above-mentioned recording medium for recording the computer program 221 executed by the arithmetic device 21. The storage device 22 may temporarily store data used by the arithmetic device 21 when the arithmetic device 21 is executing the computer program 221. The storage device 22 may store data to be stored long-term by the control device 2. The storage device 22 may include at least one of a RAM (Random Access Memory), a ROM (Read Only Memory), a hard disk device, a magneto-optical disk device, an SSD (Solid State Drive), and a disk array device. That is, the storage device 22 may include a non-transitory recording medium.

[0085] The communication device 23 can communicate with devices external to the control device 2 (e.g., the molding apparatus 1) via a communication network (not shown). In this embodiment, the communication device 23 may receive (i.e., acquire) a molten pool image IMG from the molding apparatus 1. Furthermore, the communication device 23 may transmit (i.e., output) to the molding apparatus 1 a control signal CS for controlling the operation of the molding apparatus 1.

[0086] The input device 24 is a device that accepts information input to the control device 2 from outside the control device 2. For example, the input device 24 may include an operation device (e.g., at least one of a keyboard, a mouse, and a touch panel) that can be operated by a user of the control device 2. For example, the input device 24 may include a recording medium reading device that can read information recorded as data on a recording medium that can be externally attached to the control device 2.

[0087] It should be noted that information can be input as data to the control device 2 from a device external to the control device 2 via the communication device 23. In this case, the communication device 23 may function as an input device that accepts information input to the control device 2 from outside the control device 2.

[0088] The output device 25 is a device that outputs information to the outside of the control device 2. For example, the output device 25 may output information as an image. That is, the output device 25 may include a display device (a so-called display) that can display an image. For example, the output device 25 may output information as sound. That is, the output device 25 may include an audio device (a so-called speaker) that can output sound. For example, the output device 25 may output information on paper. That is, the output device 25 may include a printing device (a so-called printer) that can print desired information on paper. For example, the output device 25 may output information as data to a recording medium that can be externally attached to the control device 2.

[0089] The control device 2 can output information as data to a device external to the control device 2 via the communication device 23. In this case, the communication device 23 may function as an output device that outputs information to a device external to the control device 2.

[0090] (2) Operations Performed by the Modeling System SYS Next, operations performed by the modeling system SYS will be described.

[0091] (2-1) Modeling Operation First, the modeling operation (additional processing operation for performing additional processing on the workpiece W) performed by the modeling system SYS will be described. As described above, the modeling system SYS models the three-dimensional structure ST by performing additional processing based on the laser build-up welding method. Therefore, the modeling system SYS may model the three-dimensional structure ST by performing a modeling operation in accordance with the laser build-up welding method.

[0092] The modeling system SYS models a three-dimensional structure ST on a workpiece W based on three-dimensional model data (in other words, three-dimensional model information) of the three-dimensional structure ST to be modeled. As the three-dimensional model data, measurement data of a three-dimensional object measured by at least one of a measuring device provided in the modeling system SYS and a three-dimensional shape measuring device provided separately from the modeling system SYS may be used. As the three-dimensional model data, CAD (Computer Aided Design) data may be used.

[0093] To form a three-dimensional structure ST, the modeling system SYS sequentially models, for example, multiple structural layers SL aligned along the Z-axis direction. For example, the modeling system SYS sequentially models multiple structural layers SL layer by layer based on data for multiple layers obtained by slicing a three-dimensional model of the three-dimensional structure ST along the Z-axis direction. As a result, a three-dimensional structure ST is formed, which is a layered structure in which multiple structural layers SL, each aligned in an extension direction perpendicular to the Z-axis, are stacked along the Z-axis. Note that the structural layers SL do not necessarily have to be models having a layered shape.

[0094] In addition, in order to model the three-dimensional structure ST, the modeling system SYS may sequentially model multiple structural layers SL arranged along a direction inclined with respect to the Z-axis direction (i.e., a direction oblique with respect to the Z-axis direction). For example, the modeling system SYS sequentially models multiple structural layers SL layer by layer based on data of multiple layers obtained by slicing a three-dimensional model of the three-dimensional structure ST along a direction inclined with respect to the Z-axis direction. As a result, the three-dimensional structure ST is modeled as a layered structure in which multiple structural layers SL, each extending in a direction inclined with respect to the Z-axis direction, are stacked along a direction inclined with respect to the Z-axis direction.

[0095] The modeling system SYS may model the three-dimensional structure ST on the workpiece W based on processing control information generated based on three-dimensional model data (in other words, three-dimensional model information) of the three-dimensional structure ST to be modeled. The processing control information may be generated (in other words, prepared) by the control device 2. The processing control information may be generated by a control information generating device different from the control device 2.

[0096] An example of the processing control information is the processing path information TPI shown in FIG. 7 . As shown in FIG. 7 , the processing path information TPI may include information regarding the target irradiation position (i.e., the position of the target irradiation area EA) where the shaping light EL should be irradiated to form the three-dimensional structure ST. For example, the processing path information TPI may include information indicating the position of the target irradiation area EA using three-dimensional coordinates. In particular, the processing path information TPI may include information regarding the movement trajectory of the target irradiation area EA. For example, the processing path information TPI may include information indicating the movement trajectory of the target irradiation area EA using a time series of multiple three-dimensional coordinates. For this reason, the processing path information TPI may be referred to as trajectory information. The processing path information TPI may include a G-code indicating a processing path or tool path corresponding to the movement trajectory of the target irradiation area EA. The processing path information TPI may be generated as a file with an extension "gcode" or "gco."

[0097] Since the target irradiation area EA is irradiated with the shaping light EL, the movement trajectory of the target irradiation area EA may be considered to be equivalent to the movement trajectory of the irradiation position of the shaping light EL. The movement trajectory of the target irradiation area EA may be considered to include the movement trajectory of the irradiation position of the shaping light EL. In this case, the processing path information TPI may include information regarding the movement trajectory of the irradiation position of the shaping light EL.

[0098] As described above, the modeling system SYS sequentially models multiple structural layers SL to model the three-dimensional structure ST. In this case, as shown in FIG. 7 , the processing path information TPI may include multiple pieces of intra-layer pass information LPI used to model the multiple structural layers SL, respectively. For example, if K structural layers SL (where K is a constant indicating an integer greater than or equal to 2) are sequentially modeled to model the three-dimensional structure ST, the processing path information TPI may include intra-layer pass information LPI used to model the first structural layer SL, intra-layer pass information LPI used to model the second structural layer SL, ..., intra-layer pass information LPI used to model the (K-1)th structural layer SL, and intra-layer pass information LPI used to model the Kth structural layer SL. The intra-layer pass information LPI may include information regarding the target irradiation positions (i.e., the positions of the target irradiation areas EA) to which the modeling light EL should be irradiated in order to model each structural layer SL. For example, the intra-layer pass information LPI may include information indicating the positions of the target irradiation areas EA for modeling each structural layer SL using three-dimensional coordinates. In particular, the intra-layer pass information LPI may include information regarding the movement trajectories of the target irradiation areas EA for modeling each structural layer SL. For example, the intra-layer pass information LPI may include information indicating the movement trajectories of the target irradiation areas EA for modeling each structural layer SL using a time series of multiple three-dimensional coordinates. For this reason, the intra-layer pass information LPI may be referred to as intra-layer movement trajectory information.

[0099] One intra-layer pass information LPI corresponding to one structural layer SL may be considered to include information about the movement trajectory of the target irradiation area EA within a predetermined plane (first plane) on which the one structural layer SL is to be formed. Other intra-layer pass information LPI corresponding to another structural layer SL different from the one structural layer SL may be considered to include information about the movement trajectory of the target irradiation area EA within a predetermined plane (other plane) on which the other structural layer SL is to be formed, different from the predetermined plane (first plane) on which the one structural layer SL is to be formed. In other words, the multiple intra-layer pass information LPI included in the processing pass information TPI may be considered to include information about the movement trajectory of the target irradiation area EA within multiple different planes on which the multiple structural layers SL are to be formed. Because multiple structural layers SL are stacked along the Z-axis direction, the multiple intra-layer pass information LPI included in the processing pass information TPI may be considered to include information about the movement trajectory of the target irradiation area EA within multiple planes located at different positions in the Z-axis direction. Furthermore, when a structural layer SL is formed on a curved surface rather than on a flat surface, the intra-layer path information LP1 corresponding to the structural layer SL may include information regarding the movement trajectory of the target irradiation area EA within the curved surface.

[0100] The processing path information TPI may be stored in the storage device 22. In this case, the calculation device 21 may read the processing path information TPI from the storage device 22 and control the modeling device 1 based on the read processing path information TPI. Specifically, the calculation device 21 may read multiple pieces of intra-layer pass information LPI in sequence (or all at once) from the processing path information TPI stored in the storage device 22. The calculation device 21 may control the modeling device 1 to sequentially model each of the multiple structure layers SL based on the read multiple pieces of intra-layer pass information LPI.

[0101] Here, the operation of forming each structure layer SL based on the intra-layer pass information LPI will be described with reference to FIGS. 8( a) to 8(e). Under the control of the control device 2, the modeling system SYS moves at least one of the modeling head 121 and the stage 131 based on the intra-layer pass information LPI so that the target irradiation area EA is set in a desired area on the modeling surface MS corresponding to the surface of the workpiece W or the surface of the modeled structure layer SL. Then, the modeling system SYS irradiates the target irradiation area EA with modeling light EL from the irradiation optical system 1211. At this time, the focusing surface on which the modeling light EL is focused in the Z-axis direction may coincide with the modeling surface MS. Alternatively, the focusing surface may be offset from the modeling surface MS in the Z-axis direction. As a result, as shown in FIG. 8(a), a molten pool (i.e., a pool of metal or the like melted by the modeling light EL) MP is formed on the modeling surface MS irradiated with the modeling light EL. Furthermore, under the control of the control device 2, the modeling system SYS supplies the modeling material M from the material nozzle 1212. As a result, the modeling material M is supplied to the molten pool MP. In other words, the modeling material M is poured into the molten pool MP. The modeling material M supplied (pouring) into the molten pool MP is melted by the modeling light EL irradiating the molten pool MP. Alternatively, the modeling material M supplied from the material nozzle 1212 may be melted by the modeling light EL before reaching the molten pool MP, and the molten modeling material M may be supplied to the molten pool MP. Thereafter, when the modeling light EL is no longer irradiated onto the molten pool MP due to the movement of at least one of the modeling head 121 and the stage 131, the molten modeling material M in the molten pool MP cools and solidifies (i.e., solidifies). As a result, the solidified modeling material M is deposited on the modeling surface MS, as shown in FIG. 8( c).

[0102] The modeling system SYS repeats a series of modeling processes, including forming the molten pool MP by irradiating the modeling light EL, supplying the modeling material M to the molten pool MP, melting the supplied modeling material M, and solidifying the molten modeling material M, while controlling at least one of the head drive system 122 and the stage drive system 132 so that the target irradiation area EA moves on the modeling surface MS along a movement trajectory based on the intra-layer pass information LPI, as shown in FIG. 8( d ). In this case, the calculation device 21 may transmit (output) the read intra-layer pass information LPI to at least one of the head drive system 122 and the stage drive system 132. At least one of the head drive system 122 and the stage drive system 132 may move at least one of the modeling head 121 and the stage 131 based on the intra-layer pass information LPI transmitted from the calculation device 21 so that the target irradiation area EA moves on the modeling surface MS along a movement trajectory based on the intra-layer pass information LPI. Alternatively, the arithmetic unit 21 may generate a control signal CS for controlling at least one of the head drive system 122 and the stage drive system 132 based on the read intra-layer pass information LPI, and transmit the generated control signal CS to at least one of the head drive system 122 and the stage drive system 132. At least one of the head drive system 122 and the stage drive system 132 may move at least one of the modeling head 121 and the stage 131 based on the control signal CS transmitted from the arithmetic unit 21 so that the target irradiation area EA moves on the modeling surface MS along a movement trajectory based on the intra-layer pass information LPI. Even in this case, since the control signal CS is generated based on the intra-layer pass information LPI, transmitting the control signal CS generated based on the intra-layer pass information LPI to at least one of the head drive system 122 and the stage drive system 132 may be considered equivalent to transmitting the intra-layer pass information LPI to at least one of the head drive system 122 and the stage drive system 132.

[0103] While the target irradiation area EA is moving, the modeling system SYS irradiates the area on the modeling surface MS where an object is to be formed with the modeling light EL, while not irradiating the area on the modeling surface MS where an object is not to be formed with the modeling light EL. In other words, the modeling system SYS irradiates the modeling surface MS with the modeling light EL at a timing appropriate to the distribution of the area where an object is to be formed, while moving the target irradiation area EA on the modeling surface MS along a movement trajectory based on the intra-layer path information LPI. As a result, the molten pool MP also moves on the modeling surface MS along a movement trajectory appropriate to the movement trajectory of the target irradiation area EA. Specifically, the molten pool MP is sequentially formed on the modeling surface MS in the area irradiated with the modeling light, along the movement trajectory of the target irradiation area EA. As a result, as shown in FIG. 8( e), a structure layer SL corresponding to an assembly of objects made of melted and subsequently solidified modeling material M is formed on the modeling surface MS. In other words, a structure layer SL is formed that corresponds to an assembly of objects formed on the build surface MS in a pattern that corresponds to the movement trajectory of the molten pool MP (i.e., a structure layer SL that has a shape that corresponds to the movement trajectory of the molten pool MP in a planar view). In other words, a structure layer SL is formed that corresponds to an assembly of objects that extend along an extension direction that is parallel to the movement direction of the molten pool MP (e.g., an extension direction along the XY plane). In this case, the structure layer SL may be considered to be a structure layer SL that extends along the extension direction that is parallel to the movement direction of the molten pool MP.

[0104] When the target irradiation area EA is set in an area where it is not desired to form an object, the modeling system SYS may irradiate the target irradiation area EA with the modeling light EL and stop the supply of the modeling material M. When the target irradiation area EA is set in an area where it is not desired to form an object, the modeling system SYS may supply the modeling material M to the target irradiation area EA and irradiate the target irradiation area EA with the modeling light EL at an intensity that does not allow a molten pool MP to form.

[0105] The modeling system SYS repeatedly performs operations for modeling such a structure layer SL based on multiple pieces of intra-layer pass information LPI under the control of the control device 2. Specifically, the modeling system SYS models a first structure layer SL#1 on a modeling surface MS corresponding to the surface of the workpiece W. To model the structure layer SL#1, the control device 2 reads out the intra-layer pass information LPI#1 used to model the first structure layer SL#1 from the processing path information TPI stored in the storage device 22. Then, the calculation device 21 controls the modeling device 1 to model the structure layer SL#1 based on the intra-layer pass information LPI#1. As a result, the structure layer SL#1 is modeled on the modeling surface MS, as shown in FIG. 9A . Then, the modeling system SYS sets the surface (i.e., the upper surface) of the structure layer SL#1 as a new modeling surface MS, and models a second structure layer SL#2 on the new modeling surface MS. To print the structural layer SL#2, the control device 2 reads out the intra-layer pass information LPI#2 used to print the structural layer SL#2 from the processing path information TPI stored in the storage device 22. Then, the calculation device 21 controls the printing apparatus 1 to print the structural layer SL#2 based on the intra-layer pass information LPI#2. In this case, before performing the printing operations shown in FIGS. 8( a) to 8(e), the calculation device 21 controls at least one of the head drive system 122 and the stage drive system 132 based on the intra-layer pass information LPI#2 so that the printing head 121 moves along the Z axis relative to the stage 131. Specifically, the control device 2 controls at least one of the head drive system 122 and the stage drive system 132 to move the printing head 121 toward the +Z side and / or move the stage 131 toward the −Z side so that the target irradiation area EA is set on the surface of the structural layer SL#1 (i.e., the new printing surface MS). In this case, the relative movement amount of the object-forming head 121 with respect to the stage 131 may be a movement amount corresponding to a target value of the layer thickness dz, which is the thickness (height) of the structure layer SL. For example, the relative movement amount of the object-forming head 121 with respect to the stage 131 may be the same as the target value of the layer thickness dz.Therefore, the Z position of the target irradiation area EA indicated by the intra-layer pass information LPI#2 may be a position away from the Z position of the target irradiation area EA indicated by the intra-layer pass information LPI#1 on the +Z side by the target value of the layer thickness dz. Then, the calculation device 21 controls the modeling apparatus 1 to model the structural layer SL#2 based on the intra-layer pass information LPI#2. As a result, the structural layer SL#2 is modeled as shown in FIG. 9B. Thereafter, similar operations are repeated until all structural layers SL constituting the three-dimensional structure ST to be modeled on the workpiece W are modeled. In other words, the calculation device 21 sequentially reads out multiple pieces of intra-layer pass information LPI from the processing pass information TPI stored in the storage device 22 and sequentially transmits the read-out intra-layer pass information LPI to at least one of the head drive system 122 and the stage drive system 132. As a result, as shown in FIG. 9C, the three-dimensional structure ST is modeled by a layered structure in which multiple structural layers SL are stacked.

[0106] (2-2) Self-Alignment Function The modeling system SYS may have a function in which "the size of the modeled object added to the modeling surface MS by additive processing (i.e., the modeling amount, for example, the layer thickness dz of the above-mentioned structural layer SL) varies depending on the distance between the material nozzle 1212 and the modeling surface MS (i.e., the nozzle distance D)." In the following explanation, for convenience of explanation, this function is referred to as a self-alignment function. Note that the self-alignment function may also be referred to as a self-adjustment function, a self-correcting function, a self-righting function, a self-regulating function, or a self-alignment function.

[0107] Specifically, as shown in FIG. 10 (particularly the diagram at the bottom left of FIG. 10 ), which illustrates the positional relationship between the material nozzle 1212 and the build surface MS, when the material concentration point CP is located below the build surface MS, the longer the nozzle distance D, the shorter the distance D' between the concentration area CA and the build surface MS along the Z-axis direction. Note that the distance D' between the concentration area CA and the build surface MS may also refer to the distance between the material concentration point CP and the build surface MS. As a result, as shown in FIG. 11 , the longer the nozzle distance D, the greater the amount of build material M (material input amount SM) dispensed from the material nozzle 1212 into the molten pool MP per unit time. This is because the shorter the distance D', the closer the concentration area CA, where the build material M is concentrated, is to the build surface MS. In the following description, the amount of build material M dispensed into the molten pool MP will be referred to as the material input amount SM. The greater the material input amount SM, the greater the amount of build material M melted in the molten pool MP. The greater the amount of the building material M that melts in the molten pool MP, the greater the amount of the building material M that solidifies on the building surface MS. As a result, the height of the object made of the solidified building material M increases. Therefore, as shown by the thick solid line in Figure 11, when the material concentration point CP is located below the building surface MS, the longer the nozzle distance D, the thicker the layer thickness dz of the structure layer SL built on the building surface MS. In other words, there is a relationship between the nozzle distance D and the layer thickness dz such that the longer the nozzle distance D, the thicker the layer thickness dz.

[0108] Similarly, as shown in FIG. 10 (particularly the diagram at the lower right of FIG. 10 ), when the material concentration point CP is located below the build surface MS, the shorter the nozzle distance D, the longer the distance D' between the concentration area CA and the build surface MS along the Z-axis. As a result, as shown in FIG. 11 , the shorter the nozzle distance D, the smaller the material input amount SM from the material nozzle 1212 per unit time. This is because the longer the distance D', the farther the concentration area CA, where the build material M is concentrated, is from the build surface MS. The smaller the material input amount SM, the smaller the amount of build material M melted in the molten pool MP. The smaller the amount of build material M melted in the molten pool MP, the smaller the amount of build material M solidified on the build surface MS. As a result, the height of the object made of the solidified build material M becomes smaller. Therefore, as shown by the thick solid line in FIG. 11 , the shorter the nozzle distance D, the thinner the layer thickness dz of the structure layer SL built on the build surface MS. That is, there is a relationship between the nozzle distance D and the layer thickness dz such that the shorter the nozzle distance D, the thinner the layer thickness dz.

[0109] Note that, when the material concentration point CP is located above the printing surface MS, the longer the nozzle distance D, the longer the distance D' between the concentration area CA and the printing surface MS along the Z-axis direction. Therefore, as shown by the thick dotted line in FIG. 11 , when the material concentration point CP is located above the printing surface MS, the longer the nozzle distance D, the thinner the layer thickness dz of the structure layer SL printed on the printing surface MS. In other words, a relationship exists between the nozzle distance D and the layer thickness dz, such that the longer the nozzle distance D, the thinner the layer thickness dz. Similarly, when the material concentration point CP is located above the printing surface MS, the shorter the nozzle distance D, the shorter the distance D' between the concentration area CA and the printing surface MS along the Z-axis direction. Therefore, as shown by the thick dotted line in FIG. 11 , when the material concentration point CP is located above the printing surface MS, the shorter the nozzle distance D, the thicker the layer thickness dz of the structure layer SL printed on the printing surface MS. That is, there is a relationship between the nozzle distance D and the layer thickness dz such that the shorter the nozzle distance D, the thicker the layer thickness dz.

[0110] However, as described above, in this embodiment, the modeling system SYS performs modeling operations in a state in which the material concentration point CP is located below the modeling surface MS, as a general rule. Therefore, the modeling system SYS generally uses the region on the left side of the graph in Fig. 11 (specifically, the region indicated by the thick solid line in the graph). In other words, the modeling system SYS generally performs modeling operations in the region on the left side of the graph in Fig. 11 (specifically, the region indicated by the thick solid line in the graph). The region on the left side of the graph in Fig. 11 is the region to the left of the point where the material concentration point CP is located on the modeling surface MS, the point where the material input amount, which is the amount of modeling material M input into the molten pool MP, is maximized, or the point where the layer thickness dz is maximized.

[0111] The modeling system SYS may use such a self-alignment function to sequentially model multiple structure layers SL. That is, the modeling system SYS may sequentially model multiple structure layers SL using the self-alignment function under the self-alignment condition that "the shorter the nozzle distance D, the thicker the layer thickness dz (i.e., the farther the material nozzle 1212 is from the modeling surface MS, the greater the layer thickness dz), and the longer the nozzle distance D, the thinner the layer thickness dz (i.e., the closer the material nozzle 1212 is to the modeling surface MS, the thinner the layer thickness dz)." Hereinafter, an example of a modeling operation in which multiple structure layers SL are sequentially modeled using the self-alignment function will be described with reference to FIGS. 12 and 13 . Specifically, as shown in FIG. 12 , an example of a modeling operation in which multiple structure layers SL are sequentially modeled using the self-alignment function will be described under the condition that the target layer thickness dz_tgt, which is the target value of the layer thickness dz of the structure layer SL, is set to the first layer thickness dz #11.

[0112] In this case, the processing path information TPI includes multiple pieces of intra-layer pass information LPI that are respectively used to form multiple structural layers SL having the first layer thickness dz#11. Specifically, the processing path information TPI includes multiple pieces of intra-layer pass information LPI that include instructions to move the shaping head 121 along the Z-axis direction relative to the stage 131 by an amount corresponding to the first layer thickness dz#11 each time a structural layer SL is formed.

[0113] In this case, first, as shown in FIG. 13( a), in order to form the first structural layer SL#1 having the first layer thickness dz#11, the arithmetic device 21 moves at least one of the modeling head 121 and the stage 131 based on the intra-layer pass information LPI for forming the first structural layer SL#1 so that the nozzle distance D, which is the distance between the surface of the workpiece W (i.e., the modeling surface MS) and the material nozzle 1212, becomes the first distance D#11 (see FIG. 12) for forming the structural layer SL having the first layer thickness dz#11. Then, the arithmetic device 21 controls the modeling apparatus 1 to form the structural layer SL#1 based on the intra-layer pass information LPI for forming the first structural layer SL#1. As a result, as shown in FIG. 13( b), the first structural layer SL#1 having the first layer thickness dz#11 is formed.

[0114] Then, as shown in FIG. 13( c), in order to print a second structural layer SL#2 having a first layer thickness dz#11, the arithmetic device 21 moves the modeling head 121 relative to the stage 131 along the Z-axis direction by an amount corresponding to the first layer thickness dz#11, based on the intra-layer pass information LPI for printing the second structural layer SL#2. As a result, as shown in FIG. 13( c), the nozzle distance D, which is the distance between the surface of the structural layer SL#1 (i.e., the printing surface MS) and the material nozzle 1212, becomes the first distance D#11. Then, the arithmetic device 21 controls the modeling apparatus 1 to print the structural layer SL#2 based on the intra-layer pass information LPI for printing the second structural layer SL#2. As a result, as shown in FIG. 13( d), the second structural layer SL#2 having the first layer thickness dz#11 is printed on the structural layer SL#1.

[0115] Thereafter, the same operation is repeated until all of the structural layers SL that constitute the three-dimensional structure ST to be formed on the workpiece W are formed. As a result, the three-dimensional structure ST is formed by a layered structure in which multiple structural layers SL are stacked.

[0116] Here, an example of a situation in which the self-alignment function described above is effective is a situation in which the layer thickness dz of the formed structural layer SL differs from the target layer thickness dz_tgt (in this case, the first layer thickness dz#11). As an example, as shown in FIG. 13( d ), a case will be described in which the layer thickness dz of the third structural layer SL#3 formed on the structural layer SL#2 is thinner than the first layer thickness dz#11. Even in this case, as shown in FIG. 13( d ), after the structural layer SL#3 is formed, in order to form the fourth structural layer SL#4, the arithmetic device 21 moves the modeling head 121 along the Z-axis direction relative to the stage 131 by an amount corresponding to the first layer thickness dz#11, based on the intra-layer pass information LPI for forming the fourth structural layer SL#4. However, because the layer thickness dz of the structure layer SL#3 is thinner than the first layer thickness dz#11, as shown in FIG. 13(d), the nozzle distance D, which is the distance between the surface of the structure layer SL#3 (i.e., the printing surface MS) and the material nozzle 1212, becomes the second distance D#12, which is longer than the first distance D#11. The calculation device 21 then controls the printing apparatus 1 to print the structure layer SL#4 based on the intra-layer pass information LPI for printing the fourth structure layer SL#4. Here, as shown in FIG. 12, when the nozzle distance D becomes the second distance D#12, a structure layer SL having a second layer thickness dz#12, which is thicker than the first layer thickness dz#11, is printed. Therefore, as shown in FIG. 13(e), a fourth structure layer SL#4 having a second layer thickness dz#12, which is thicker than the first layer thickness dz#11, is printed on the structure layer SL#3.

[0117] 13( f), after the structural layer SL#4 is formed, the arithmetic device 21 moves the modeling head 121 relative to the stage 131 in the Z-axis direction by a movement amount equivalent to the first layer thickness dz#11, based on the intra-layer pass information LPI for forming the fifth structural layer SL#5. Here, because the structural layer SL#4 having the second layer thickness dz#12 that is thicker than the first layer thickness dz#11 has been formed, after the modeling head 121 has moved relative to the stage 131 in the Z-axis direction by the movement amount equivalent to the first layer thickness dz#11, as shown in FIG. 13( f), the nozzle distance D, which is the distance between the surface of the structural layer SL#4 (i.e., the modeling surface MS) and the material nozzle 1212, becomes a third distance D#13 that is shorter than the second distance D#12 shown in FIG. 13( d). That is, the nozzle distance D approaches the first distance D#11, which is the target value of the nozzle distance D. Then, the calculation device 21 controls the modeling apparatus 1 to model the fifth structural layer SL#5 based on the intra-layer pass information LPI for modeling the fifth structural layer SL#5. Here, as shown in FIG. 12 , when the nozzle distance D becomes a third distance D#13 that is longer than the first distance D#11 and shorter than the second distance D#12, a structural layer SL having a third layer thickness dz#13 that is thicker than the first layer thickness dz#11 and thinner than the second layer thickness dz#12 is modeled. Therefore, as shown in FIG. 13( g ), a fifth structural layer SL#5 having a third layer thickness dz#13 that is thicker than the first layer thickness dz#11 and thinner than the second layer thickness dz#12 is modeled on the structural layer SL#4. That is, the layer thickness dz of the structural layer SL#5 approaches the first layer thickness dz#11, which is the target layer thickness dz_tgt, more than the layer thickness dz of the structural layer SL#4.

[0118] In this way, if a structural layer SL thinner than the target layer thickness dz_tgt is formed, a structural layer SL thicker than the target layer thickness dz_tgt is formed on top of it. Thereafter, the layer thickness dz of the structural layer SL to be formed gradually becomes thinner, and eventually, the layer thickness dz of the structural layer SL to be formed converges to the target layer thickness dz_tgt. Therefore, even if a structural layer SL thinner than the target layer thickness dz_tgt is formed, the height of the three-dimensional structure ST to be finally formed converges to the height of a three-dimensional structure ST formed without forming a structural layer SL thinner than the target layer thickness dz_tgt. Furthermore, although detailed description will be omitted to avoid duplication, if a structural layer SL thicker than the target layer thickness dz_tgt is formed, a structural layer SL thinner than the target layer thickness dz_tgt is formed on top of it. Thereafter, the layer thickness dz of the structure layer SL to be formed gradually increases, and finally, the layer thickness dz of the structure layer SL to be formed converges to the target layer thickness dz_tgt. Therefore, even if a structure layer SL thicker than the target layer thickness dz_tgt is formed, the height of the three-dimensional structure ST to be finally formed converges to the height of the three-dimensional structure ST formed without forming a structure layer SL thicker than the target layer thickness dz_tgt. Therefore, the modeling system SYS can accurately model the three-dimensional structure ST to be finally formed by sequentially forming multiple structure layers SL using the self-alignment function. In other words, the modeling accuracy of the modeling system SYS is improved.

[0119] Furthermore, as shown in FIG. 14( a), the layer thickness dz of the molded structure layer SL may vary within the structure layer SL. That is, the flatness of the surface of the molded structure layer SL (i.e., the index value that increases as the variation in the surface of the structure layer SL relative to an ideal flat surface increases) may increase. For example, FIG. 14( a) shows an example in which the layer thickness dz of the structure layer SL#2 varies within the structure layer SL#2. In this case, as shown in FIG. 14( b), during the period in which the structure layer SL#3 is molded on the structure layer SL#2, the nozzle distance D, which is the distance between the surface of the structure layer SL#2 (i.e., the molded surface MS) and the material nozzle 1212, fluctuates in accordance with the variation in the layer thickness dz of the structure layer SL#2 as at least one of the material nozzle 1212 and the stage 131 moves. As a result, as shown in FIG. 14C, the self-alignment function described above causes the variation in the layer thickness dz of the structural layer SL#3 formed on the structural layer SL#2 to be smaller than the variation in the layer thickness dz of the structural layer SL#2. In other words, the self-alignment function described above causes the surface flatness of the structural layer SL#3 formed on the structural layer SL#2 to be smaller than the surface flatness of the structural layer SL#2. Thereafter, the self-alignment function described above causes the variation in the layer thickness dz of another structural layer SL formed on one structural layer SL to be smaller than the variation in the layer thickness dz of the one structural layer SL. As a result, the varied layer thickness dz of the structural layer SL gradually returns to its original layer thickness dz (i.e., a uniform layer thickness dz). Therefore, as shown in FIG. 14D, at a certain point, the variation in the layer thickness dz of the structural layer SL is eliminated.

[0120] Incidentally, the thicker the target layer thickness dz_tgt, the fewer the number of structural layers SL to be formed in order to form the three-dimensional structure ST. The fewer the number of structural layers SL to be formed, the shorter the time required to form the three-dimensional structure ST. Therefore, the thicker the target layer thickness dz_tgt, the more improved (i.e., higher) the throughput of the modeling apparatus 1 (i.e., the throughput of the modeling system SYS). For example, as shown in FIG. 12 , when the target layer thickness dz_tgt is set to the maximum layer thickness dz_max, which is the maximum value of the structural layer SL that can be formed, the throughput of the modeling apparatus 1 is maximized.

[0121] On the other hand, the thicker the target layer thickness dz_tgt, the more likely it is that the effect of the self-alignment function described above will be weakened. Hereinafter, the technical reason why the effect of the self-alignment function described above will be weakened as the target layer thickness dz_tgt increases will be described with reference to FIGS. 15 and 16 . Specifically, as shown in FIG. 15 , an example of a molding operation in which multiple structural layers SL are sequentially molded under a condition in which the target layer thickness dz_tgt, which is the target value of the layer thickness dz of the structural layer SL, is set to the maximum layer thickness dz_max or a value close to the maximum layer thickness dz_max, i.e., the technical reason why the effect of the self-alignment function is weakened will be described.

[0122] In this case, the processing path information TPI includes multiple pieces of intra-layer pass information LPI that are respectively used to form multiple structural layers SL having the first layer thickness dz#21. Specifically, the processing path information TPI includes multiple pieces of intra-layer pass information LPI that include instructions to move the shaping head 121 along the Z-axis direction relative to the stage 131 by an amount corresponding to the first layer thickness dz#21 each time a structural layer SL is formed.

[0123] In this case, first, as shown in FIG. 16( a), in order to form the first structural layer SL#1 having the first layer thickness dz#21, the arithmetic device 21 moves at least one of the modeling head 121 and the stage 131 based on the intra-layer pass information LPI for forming the first structural layer SL#1 so that the nozzle distance D, which is the distance between the surface of the workpiece W (i.e., the modeling surface MS) and the material nozzle 1212, becomes the first distance D#21 (see FIG. 15 ) for forming the structural layer SL having the first layer thickness dz#21. Then, the arithmetic device 21 controls the modeling apparatus 1 to form the structural layer SL#1 based on the intra-layer pass information LPI for forming the first structural layer SL#1. As a result, as shown in FIG. 16( b), the first structural layer SL#1 having the first layer thickness dz#21 is formed.

[0124] Then, as shown in FIG. 16( c), in order to print a second structural layer SL#2 having a first layer thickness dz#21, the arithmetic device 21 moves the modeling head 121 relative to the stage 131 along the Z-axis direction by a movement amount corresponding to the first layer thickness dz#21, based on the intra-layer pass information LPI for printing the second structural layer SL#2. As a result, as shown in FIG. 16( c), the nozzle distance D, which is the distance between the surface of the structural layer SL#1 (i.e., the printing surface MS) and the material nozzle 1212, becomes the first distance D#21. Then, the arithmetic device 21 controls the modeling apparatus 1 to print the structural layer SL#2 based on the intra-layer pass information LPI for printing the second structural layer SL#2. As a result, as shown in FIG. 16( d), a first structural layer SL#2 having a first layer thickness dz#21 is printed on the structural layer SL#1.

[0125] Thereafter, similar operations are repeated until all structural layers SL constituting the three-dimensional structure ST to be formed on the workpiece W have been formed. Here, as shown in FIG. 16(d), an example will be described in which the layer thickness dz of the third structural layer SL#3 formed on the structural layer SL#2 is thinner than the first layer thickness dz#21. Even in this case, as shown in FIG. 16(d), after the structural layer SL#3 is formed, the computing device 21 moves the modeling head 121 along the Z-axis direction relative to the stage 131 by an amount corresponding to the first layer thickness dz#21, based on the intra-layer pass information LPI for forming the fourth structural layer SL#4. However, because the layer thickness dz of the structure layer SL#3 is thinner than the first layer thickness dz#21, as shown in FIG. 16( d ), the nozzle distance D, which is the distance between the surface of the structure layer SL#3 (i.e., the printing surface MS) and the material nozzle 1212, becomes a second distance D#22, which is longer than the first distance D#21. The calculation device 21 then controls the printing apparatus 1 to print the structure layer SL#4 based on the intra-layer pass information LPI for printing the fourth structure layer SL#4. Here, on the graph shown in FIG. 15 , the thicker the layer thickness dz, the smaller the slope of the graph. In other words, the thicker the layer thickness dz, the smaller the ratio of the increase in the layer thickness dz to the increase in the nozzle distance D. Therefore, in the example shown in FIG. 16( d ), the layer thickness dz of the structure layer SL to be printed is thinner than in the example shown in FIG. 13( d ), in which the effect of the self-alignment function is fully exerted. Alternatively, in the region on the graph shown in Fig. 15 where the nozzle distance D exceeds the nozzle distance corresponding to the maximum layer thickness dz_max, as the nozzle distance D increases, the layer thickness dz of the structure layer SL to be formed becomes thinner. In this case, too, in the example shown in Fig. 16(d), the layer thickness dz of the structure layer SL to be formed becomes thinner compared to the example shown in Fig. 13(d), in which the effect of the self-alignment function is fully exerted. For convenience of explanation, the following describes an example in which, when the nozzle distance D is the second distance D#22 as shown in Fig. 15, a structure layer SL having a second layer thickness dz#22 thinner than the first layer thickness dz#21 is formed.Therefore, as shown in FIG. 16( e ), a fourth structural layer SL#4 having a second layer thickness dz#22 thinner than the first layer thickness dz#21 is formed on the structural layer SL#3.

[0126] 16( f), after the structural layer SL#4 is formed, the arithmetic device 21 moves the modeling head 121 relative to the stage 131 in the Z-axis direction by a movement amount equivalent to the first layer thickness dz#21, based on the intra-layer pass information LPI for forming the fifth structural layer SL#5. Here, because the structural layer SL#4 having the second layer thickness dz#22, which is thinner than the first layer thickness dz#21, has been formed, after the modeling head 121 has moved relative to the stage 131 in the Z-axis direction by the movement amount equivalent to the first layer thickness dz#21, as shown in FIG. 16( f), the nozzle distance D, which is the distance between the surface of the structural layer SL#4 (i.e., the printing surface MS) and the material nozzle 1212, becomes a third distance D#23, which is longer than the second distance D#22 shown in FIG. In other words, the nozzle distance D becomes even farther from the first distance D#21, which is the original target value of the nozzle distance D. Thereafter, the calculation device 21 controls the modeling apparatus 1 to model the structural layer SL#5, based on the intra-layer pass information LPI for modeling the fifth structural layer SL#5. In this case, for the same reason as when the structural layer SL#4 is modeled, the fifth structural layer SL#5 having a third layer thickness dz#23 that is thinner than the first layer thickness dz#21 (and, in some cases, thinner than the second layer thickness dz#22) is modeled on the structural layer SL#4, as shown in FIG. 16( g).

[0127] In this way, if a structural layer SL thinner than the target layer thickness dz_tgt is formed under conditions where the target layer thickness dz_tgt is relatively thick (specifically, under conditions where the effect of the self-alignment function is weakened), the layer thickness dz of the structural layer SL to be formed thereon may be thinner than if a structural layer SL thinner than the target layer thickness dz_tgt were formed under conditions where the target layer thickness dz_tgt is not so thick (specifically, under conditions where the effect of the self-alignment function is exerted). For this reason, there is a possibility that the nozzle distance D will continue to be longer than the original target distance. In other words, there is a possibility that the nozzle distance D will monotonically increase. As a result, there is a possibility that the layer thickness dz of the structural layer SL to be formed will continue to be less than the target layer thickness dz_tgt. As a result, there is a possibility that the layer thickness dz of the structural layer SL to be formed will increasingly deviate from the target layer thickness dz_tgt as the structural layer SL is formed. As a result, as shown in Figure 16 (h), the height of the three-dimensional structure ST that is finally formed may be lower than the height of a three-dimensional structure ST that is formed without forming a structural layer SL thinner than the target layer thickness dz_tgt. In other words, the effect of the self-alignment function may be weakened. As a result, the forming accuracy of the three-dimensional structure ST may deteriorate. Note that, although detailed explanation will be omitted to avoid repetition, even if a structural layer SL thicker than the target layer thickness dz_tgt is formed under conditions where the target layer thickness dz_tgt is appropriately thick (specifically, conditions where the effect of the self-alignment function is weakened), the forming accuracy of the three-dimensional structure ST may deteriorate.

[0128] Furthermore, as shown in FIG. 17( a), even when the effect of the self-alignment function is weakened, the layer thickness dz of the formed structure layer SL may vary within the structure layer SL, just as when the effect of the self-alignment function is exerted. In other words, the flatness of the surface of the formed structure layer SL may increase. For example, FIG. 17( a) shows an example in which the layer thickness dz of the structure layer SL#2 varies within the structure layer SL#2. In this case, as shown in FIG. 17( b), during the period in which the structure layer SL#3 is formed on the structure layer SL#2, the nozzle distance D, which is the distance between the surface of the structure layer SL#2 (i.e., the forming surface MS) and the material nozzle 1212, fluctuates in accordance with the variation in the layer thickness dz of the structure layer SL#2 as at least one of the material nozzle 1212 and the stage 131 moves. As a result, due to the weakening of the effect of the self-alignment function described above, as shown in FIG. 17( c), the variation in the layer thickness dz of the structural layer SL#3 formed on the structural layer SL#2 may be greater than the variation in the layer thickness dz of the structural layer SL#2. In other words, due to the weakening of the effect of the self-alignment function described above, the flatness of the surface of the structural layer SL#3 formed on the structural layer SL#2 may be greater than the flatness of the surface of the structural layer SL#2. Even after that, due to the weakening of the effect of the self-alignment function described above, the variation in the layer thickness dz of another structural layer SL formed on one structural layer SL may be greater than the variation in the layer thickness dz of the one structural layer SL. Therefore, as shown in FIG. 17( d), the varying layer thickness dz of the structural layer SL becomes increasingly different from the original layer thickness dz (i.e., a uniform layer thickness dz). As a result, the molding accuracy of the three-dimensional structure ST may deteriorate.

[0129] (2-3) Self-Alignment Modeling Mode and High-Throughput Modeling Mode As described above, the thicker the target layer thickness dz_tgt, the weaker the effect of the self-alignment function described above, which may result in a deterioration in the modeling accuracy of the three-dimensional structure ST. However, even in this case, the modeling apparatus 1 can still model the three-dimensional structure ST with high throughput, although the modeling accuracy may not be high. For this reason, the modeling apparatus 1 may, under the control of the control device 2, model multiple structural layers SL (three-dimensional structures ST) in a high-throughput modeling mode that prioritizes improving throughput over achieving the effects of the self-alignment function. Alternatively, the modeling apparatus 1 may, under the control of the control device 2, model multiple structural layers SL (three-dimensional structures ST) in a self-alignment modeling mode that prioritizes achieving the effects of the self-alignment function over achieving the effects of throughput.

[0130] However, when the modeling apparatus 1 models multiple structural layers SL (three-dimensional structures ST) in the self-aligned modeling mode, although the modeling accuracy of the three-dimensional structures ST increases, there is a limit to how much the throughput of the modeling apparatus 1 can be improved. On the other hand, when the modeling apparatus 1 models multiple structural layers SL (three-dimensional structures ST) in the high-throughput modeling mode, although the throughput of the modeling apparatus 1 increases, there is a limit to how much the accuracy of the modeling of the three-dimensional structures ST can be improved.

[0131] Therefore, in the present embodiment, the control device 2 may perform a modeling mode switching operation to control the modeling apparatus 1 to switch the modeling mode of the modeling system SYS between the self-aligned modeling mode and the high-throughput modeling mode during the period in which the three-dimensional structure ST is being modeled. In other words, the control device 2 may perform a modeling mode switching operation to appropriately select the self-aligned modeling mode or the high-throughput modeling mode as the modeling mode of the modeling system SYS during the period in which the three-dimensional structure ST is being modeled. As a result, the modeling system SYS may achieve both improvement in the modeling accuracy of the three-dimensional structure ST and improvement in throughput.

[0132] The self-aligned printing mode and the high-throughput printing mode may be distinguished based on the target layer thickness dz_tgt. For example, as shown in FIG. 18A , which is a graph showing the relationship between the layer thickness dz and the nozzle distance D, the target layer thickness dz_tgt used in the self-aligned printing mode may be thinner than the target layer thickness dz_tgt used in the high-throughput printing mode. As an example, the target layer thickness dz_tgt used in the self-aligned printing mode may be equal to or less than a predetermined layer thickness threshold dz_th, and the target layer thickness dz_tgt used in the high-throughput printing mode may be equal to or greater than the predetermined layer thickness threshold dz_th. In other words, the self-aligned printing mode may be a printing mode that uses a target layer thickness dz_tgt that is equal to or less than the predetermined layer thickness threshold dz_th, and the high-throughput printing mode may be a printing mode that uses a target layer thickness dz_tgt that is equal to or greater than the predetermined layer thickness threshold dz_th. In other words, the self-aligned printing mode may be a printing mode that satisfies the condition that the target layer thickness dz_tgt is equal to or less than a predetermined layer thickness threshold dz_th, and the high-throughput printing mode may be a printing mode that satisfies the condition that the target layer thickness dz_tgt is equal to or greater than a predetermined layer thickness threshold dz_th. As another example, the target layer thickness dz_tgt used in the self-aligned printing mode may be a first layer thickness, and the target layer thickness dz_tgt used in the high-throughput printing mode may be a second layer thickness that is thicker than the first layer thickness. In other words, the self-aligned printing mode may be a printing mode in which the target layer thickness dz_tgt is set to the first layer thickness that is thinner than the second layer thickness, and the high-throughput printing mode may be a printing mode in which the target layer thickness dz_tgt is set to the second layer thickness that is thicker than the first layer thickness. In other words, the self-aligned printing mode may be a printing mode that satisfies the condition that the target layer thickness dz_tgt is set to a first layer thickness that is thinner than the second layer thickness, and the high-throughput printing mode may be a printing mode that satisfies the condition that the target layer thickness dz_tgt is set to a second layer thickness that is thicker than the first layer thickness. Note that the first layer thickness may be a layer thickness that is equal to or smaller than the above-mentioned predetermined layer thickness threshold dz_th, and the second layer thickness may be a layer thickness that is equal to or larger than the above-mentioned predetermined layer thickness threshold dz_th.As another example, the target layer thickness dz_tgt used in the self-aligned printing mode may be included in a first layer thickness range, and the target layer thickness dz_tgt used in the high-throughput printing mode may be included in a second layer thickness range that is thicker than the first layer thickness range. That is, the self-aligned printing mode may be a printing mode in which the target layer thickness dz_tgt is included in the first layer thickness range that is thinner than the second layer thickness range, and the high-throughput printing mode may be a printing mode in which the target layer thickness dz_tgt is included in the second layer thickness range that is thicker than the first layer thickness range. In other words, the self-aligned printing mode may be a printing mode that satisfies the condition that the target layer thickness dz_tgt is included in the first layer thickness range that is thinner than the second layer thickness range, and the high-throughput printing mode may be a printing mode that satisfies the condition that the target layer thickness dz_tgt is included in the second layer thickness range that is thicker than the first layer thickness range. Furthermore, the first layer thickness range may be a range including layer thicknesses equal to or less than the above-mentioned predetermined layer thickness threshold dz_th, and the second layer thickness range may be a range including layer thicknesses equal to or greater than the above-mentioned predetermined layer thickness threshold dz_th.

[0133] The effect of the self-alignment function is likely to be reduced when the target layer thickness dz_tgt is set to a predetermined percentage or more of the maximum layer thickness dz_max, which is the maximum value of the structure layer SL that can be formed. Therefore, a value that is a predetermined percentage or more of the maximum layer thickness dz_max may be used as the layer thickness threshold dz_th. Examples of the predetermined percentage include at least one of 50% (i.e., half), 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, and 95%.

[0134] 18( a), the slope of the graph may be zero at the coordinate point where the layer thickness dz is the maximum layer thickness dz_max and in its vicinity. In other words, even if the nozzle distance D fluctuates (e.g., increases) at this coordinate point and in its vicinity, the layer thickness dz of the structure layer SL to be formed does not need to change. Furthermore, because the layer thickness dz depends on the material input amount SM as described above, even if the nozzle distance D fluctuates (e.g., increases) at this coordinate point and in its vicinity, the material input amount SM does not need to change. In this case, the maximum layer thickness dz_max may be a layer thickness dz that satisfies the condition that the layer thickness dz of the structure layer SL to be formed does not change (i.e., the amount of the building material M input into the molten pool MP does not change) even if the nozzle distance D fluctuates (e.g., increases).

[0135] When the self-aligned printing mode and the high-throughput printing mode are distinguished based on the target layer thickness dz_tgt, the control device 2 may switch the printing mode of the printing apparatus 1 between the self-aligned printing mode and the high-throughput printing mode by controlling (e.g., changing) the target layer thickness dz_tgt. For example, the control device 2 may set the printing mode of the printing apparatus 1 to the self-aligned printing mode by setting the target layer thickness dz_tgt to the target layer thickness dz_tgt corresponding to the self-aligned printing mode. For example, the control device 2 may set the printing mode of the printing apparatus 1 to the high-throughput printing mode by setting the target layer thickness dz_tgt to the target layer thickness dz_tgt corresponding to the high-throughput printing mode.

[0136] In this way, when the target layer thickness dz_tgt used in the self-aligned printing mode is thinner than the target layer thickness dz_tgt used in the high-throughput printing mode, the layer thickness dz of the structural layer SL printed in the self-aligned printing mode will be thinner than the layer thickness dz of the structural layer SL printed in the high-throughput printing mode. Therefore, the self-aligned printing mode and the high-throughput printing mode may be distinguished based on the layer thickness dz of the structural layer SL printed by the printing operation (i.e., the actual layer thickness dz). For example, the layer thickness dz of the structural layer SL printed in the self-aligned printing mode may be thinner than the layer thickness dz of the structural layer SL printed in the high-throughput printing mode. As an example, the layer thickness dz of the structural layer SL formed in the self-aligned forming mode may be equal to or less than the predetermined layer thickness threshold dz_th (or another threshold different from the above-mentioned layer thickness threshold dz_th; the same applies hereinafter in this paragraph), and the layer thickness dz of the structural layer SL formed in the high-throughput forming mode may be equal to or greater than the predetermined layer thickness threshold dz_th. In other words, the self-aligned forming mode may be a forming mode for forming a structural layer SL whose layer thickness dz is equal to or less than the predetermined layer thickness threshold dz_th, and the high-throughput forming mode may be a forming mode for forming a structural layer SL whose layer thickness dz is equal to or greater than the predetermined layer thickness threshold dz_th. In other words, the self-aligned modeling mode may be a modeling mode that satisfies the condition of forming a structural layer SL whose layer thickness dz is equal to or less than a predetermined layer thickness threshold dz_th, and the high-throughput modeling mode may be a modeling mode that satisfies the condition of forming a structural layer SL whose layer thickness dz is equal to or greater than a predetermined layer thickness threshold dz_th. As another example, the layer thickness dz of the structural layer SL formed in the self-aligned modeling mode may be the third layer thickness, and the layer thickness dz of the structural layer SL formed in the high-throughput modeling mode may be a fourth layer thickness that is thicker than the third layer thickness. In other words, the self-aligned modeling mode may be a modeling mode that forms a structural layer SL whose layer thickness dz is the third layer thickness that is thinner than the fourth layer thickness, and the high-throughput modeling mode may be a modeling mode that forms a structural layer SL whose layer thickness dz is the fourth layer thickness that is thicker than the third layer thickness.In other words, the self-aligned modeling mode may be a modeling mode that satisfies the condition of forming a structural layer SL having a third layer thickness dz that is thinner than the fourth layer thickness, and the high-throughput modeling mode may be a modeling mode that satisfies the condition of forming a structural layer SL having a fourth layer thickness dz that is thicker than the third layer thickness. Note that the third layer thickness may be equal to or less than the predetermined layer thickness threshold dz_th, and the fourth layer thickness may be equal to or greater than the predetermined layer thickness threshold dz_th. As another example, the layer thickness dz of the structural layer SL formed in the self-aligned modeling mode may be within the third layer thickness range, and the layer thickness dz of the structural layer SL formed in the high-throughput modeling mode may be within a fourth layer thickness range that is thicker than the third layer thickness range. That is, the self-aligned shaping mode may be a shaping mode in which a structural layer SL having a layer thickness dz falling within a third thickness range that is thinner than the fourth thickness range is formed, and the high-throughput shaping mode may be a shaping mode in which a structural layer SL having a layer thickness dz falling within a fourth thickness range that is thicker than the third thickness range is formed. In other words, the self-aligned shaping mode may be a shaping mode that satisfies the condition of shaping a structural layer SL having a layer thickness dz falling within a third thickness range that is thinner than the fourth thickness range, and the high-throughput shaping mode may be a shaping mode that satisfies the condition of shaping a structural layer SL having a layer thickness dz falling within a fourth thickness range that is thicker than the third thickness range. Note that the third thickness range may be a range that includes a layer thickness equal to or less than the predetermined layer thickness threshold dz_th, and the fourth thickness range may be a range that includes a layer thickness equal to or greater than the predetermined layer thickness threshold dz_th.

[0137] Even when the self-aligned modeling mode and the high-throughput modeling mode are distinguished based on the layer thickness dz of the structure layer SL to be modeled, the control device 2 may switch the modeling mode of the modeling apparatus 1 between the self-aligned modeling mode and the high-throughput modeling mode by controlling (e.g., changing) the target layer thickness dz_tgt, because changing the target layer thickness dz_tgt changes the layer thickness dz of the structure layer SL to be modeled.

[0138] When a new structural layer SL is formed, the height of the object increases by the layer thickness dz of the newly formed structural layer SL. Therefore, the target layer thickness dz_tgt may be considered equivalent to a target value of the increase in height of the object (hereinafter referred to as the "height increase amount"). Furthermore, the layer thickness dz of the structural layer SL to be formed (i.e., the actual layer thickness dz) may be considered equivalent to the actual value of the increase in height of the object. In this case, the self-aligned fabrication mode and the high-throughput fabrication mode, which are distinguished based on at least one of the target layer thickness dz_tgt and the layer thickness dz of the structural layer SL, may be considered to be distinguished based on the height increase amount (specifically, at least one of the target value and the actual value of the height increase amount; the same applies hereinafter).

[0139] As described above, the thicker the layer thickness dz of the structure layer SL to be formed, the more improved the throughput of the modeling apparatus 1. In other words, the thicker the target layer thickness dz_tgt, the more improved the throughput of the modeling apparatus 1. For this reason, the self-aligned modeling mode and the high-throughput modeling mode, which are distinguished based on at least one of the target layer thickness dz_tgt and the layer thickness dz of the structure layer SL, may be considered to be distinguished based on the throughput.

[0140] As described above, the layer thickness dz of the structure layer SL varies depending on the nozzle distance D. In other words, the layer thickness dz of the structure layer SL is determined according to the nozzle distance D. Therefore, the target layer thickness dz_tgt may be considered to indirectly indicate the target value of the nozzle distance D. Furthermore, the layer thickness dz of the structure layer SL to be modeled may be considered to indirectly indicate the actual nozzle distance D. Therefore, the self-aligned modeling mode and the high-throughput modeling mode, which are distinguished based on at least one of the target layer thickness dz_tgt and the layer thickness dz of the structure layer SL, may be distinguished based on the nozzle distance D (specifically, at least one of the target value and actual value of the nozzle distance D; the same applies hereinafter). For example, as shown in FIG. 18( a), which is a graph showing the relationship between the layer thickness dz and the nozzle distance D, the nozzle distance D used in the self-aligned modeling mode may be shorter than the nozzle distance D used in the high-throughput modeling mode. As an example, the nozzle distance D used in the self-aligned modeling mode may be equal to or less than a predetermined distance threshold D_th, and the nozzle distance D used in the high-throughput modeling mode may be equal to or greater than the predetermined distance threshold D_th. That is, the self-aligned modeling mode may be a modeling mode that uses a nozzle distance D that is equal to or less than the predetermined distance threshold D_th, and the high-throughput modeling mode may be a modeling mode that uses a nozzle distance D that is equal to or greater than the predetermined distance threshold D_th. In other words, the self-aligned modeling mode may be a modeling mode that satisfies the condition that the nozzle distance D is equal to or less than the predetermined distance threshold D_th, and the high-throughput modeling mode may be a modeling mode that satisfies the condition that the nozzle distance D is equal to or greater than the predetermined distance threshold D_th. As another example, a first distance may be used as the nozzle distance D used in the self-aligned modeling mode, and a second distance longer than the first distance may be used as the nozzle distance D used in the high-throughput modeling mode. In other words, the self-aligned modeling mode may be a modeling mode in which the nozzle distance D is set to a first distance that is shorter than the second distance, and the high-throughput modeling mode may be a modeling mode in which the nozzle distance D is set to a second distance that is longer than the first distance.In other words, the self-aligned modeling mode may be a modeling mode that satisfies the condition that the nozzle distance D is set to a first distance that is shorter than the second distance, and the high-throughput modeling mode may be a modeling mode that satisfies the condition that the nozzle distance D is set to a second distance that is longer than the first distance. The first distance may be equal to or shorter than the predetermined distance threshold D_th, and the second distance may be equal to or longer than the predetermined distance threshold D_th. As another example, the nozzle distance D used in the self-aligned modeling mode may be included in a first distance range, and the nozzle distance D used in the high-throughput modeling mode may be included in a second distance range that is longer than the first distance range. In other words, the self-aligned modeling mode may be a modeling mode in which the nozzle distance D is included in a first distance range that is shorter than the second distance range, and the high-throughput modeling mode may be a modeling mode in which the nozzle distance D is included in a second distance range that is longer than the first distance range. In other words, the self-aligned printing mode may be a printing mode that satisfies the condition that the nozzle distance D is included in a first distance range that is shorter than the second distance range, and the high-throughput printing mode may be a printing mode that satisfies the condition that the nozzle distance D is included in a second distance range that is longer than the first distance range. Note that the first distance range may be a range that includes distances equal to or shorter than the above-mentioned predetermined distance threshold D_th, and the second distance range may be a range that includes distances equal to or longer than the above-mentioned predetermined distance threshold D_th.

[0141] The predetermined distance threshold D_th may be a value of the nozzle distance D corresponding to the above-described predetermined layer thickness threshold dz_th. In this case, a value that is equal to or greater than a predetermined percentage of the maximum layer thickness distance D_max (see FIG. 18A ), which is the nozzle distance D for forming a structure layer SL whose layer thickness dz is the maximum layer thickness dz_max, may be used as the predetermined distance threshold D_th. As described above, an example of the predetermined percentage is at least one of 50% (i.e., half), 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, and 95%.

[0142] 18( a), the slope of the graph may be zero at the coordinate point where the layer thickness dz is the maximum layer thickness dz_max and in the vicinity thereof, as described above. That is, as described above, the layer thickness dz of the structure layer SL to be formed does not need to change even if the nozzle distance D fluctuates (e.g., increases) at this coordinate point and in the vicinity thereof. Furthermore, as described above, because the layer thickness dz depends on the material input amount SM, the material input amount SM does not need to change even if the nozzle distance D fluctuates (e.g., increases) at this coordinate point and in the vicinity thereof. In this case, the maximum layer thickness distance D_max may be a nozzle distance D that satisfies the condition that the layer thickness dz of the structure layer SL to be formed does not change (i.e., the amount of the building material M input into the molten pool MP does not change) even if the nozzle distance D fluctuates (e.g., increases).

[0143] When the self-aligned modeling mode and the high-throughput modeling mode are distinguished based on the nozzle distance D, the control device 2 may switch the modeling mode of the modeling apparatus 1 between the self-aligned modeling mode and the high-throughput modeling mode by controlling (e.g., changing) the nozzle distance D. For example, the control device 2 may set the modeling mode of the modeling apparatus 1 to the self-aligned modeling mode by setting the nozzle distance D to the nozzle distance D corresponding to the self-aligned modeling mode. For example, the control device 2 may set the modeling mode of the modeling apparatus 1 to the high-throughput modeling mode by setting the nozzle distance D to the nozzle distance D corresponding to the high-throughput modeling mode. Alternatively, when the self-aligned modeling mode and the high-throughput modeling mode are distinguished based on the nozzle distance D, the control device 2 may switch the modeling mode of the modeling apparatus 1 between the self-aligned modeling mode and the high-throughput modeling mode by controlling (e.g., changing) the target layer thickness dz_tgt. This is because, when the target layer thickness dz_tgt is changed, the movement amount of the modeling head 121 that moves in the Z-axis direction relative to the stage 131 changes each time the structure layer SL is formed, and as a result, the nozzle distance D changes. For example, the control device 2 may set the modeling mode of the modeling apparatus 1 to the self-aligned modeling mode by setting the target layer thickness dz_tgt to the target layer thickness dz_tgt that corresponds to the nozzle distance D in the self-aligned modeling mode. For example, the control device 2 may set the modeling mode of the modeling apparatus 1 to the high-throughput modeling mode by setting the target layer thickness dz_tgt to the target layer thickness dz_tgt that corresponds to the nozzle distance D in the high-throughput modeling mode.

[0144] As described with reference to FIG. 11 , the layer thickness dz of the structural layer SL varies depending on the amount of the building material M supplied to the molten pool MP (i.e., the material input amount SM). In other words, the layer thickness dz of the structural layer SL is determined according to the material input amount SM. Therefore, the target layer thickness dz_tgt may be considered to indirectly indicate the target value of the material input amount SM. Furthermore, the layer thickness dz of the structural layer SL to be built may be considered to indirectly indicate the actual value of the material input amount SM. Therefore, the self-aligned building mode and the high-throughput building mode, which are distinguished based on at least one of the target layer thickness dz_tgt and the layer thickness dz of the structural layer SL, may be distinguished based on the material input amount SM (specifically, at least one of the target value and actual value of the material input amount SM; the same applies hereinafter). For example, as shown in FIG. 18B , which is a graph showing the relationship between the material input amount SM and the nozzle distance D, the material input amount SM used in the self-aligned modeling mode may be smaller than the material input amount SM used in the high-throughput modeling mode. As an example, the material input amount SM used in the self-aligned modeling mode may be equal to or smaller than a predetermined material threshold SM_th, and the material input amount SM used in the high-throughput modeling mode may be equal to or larger than the predetermined material threshold SM_th. In other words, the self-aligned modeling mode may be a modeling mode that uses a material input amount SM that is equal to or smaller than the predetermined material threshold SM_th, and the high-throughput modeling mode may be a modeling mode that uses a material input amount SM that is equal to or larger than the predetermined material threshold SM_th. In other words, the self-aligned modeling mode may be a modeling mode that satisfies the condition that the material input amount SM is equal to or smaller than the predetermined material threshold SM_th, and the high-throughput modeling mode may be a modeling mode that satisfies the condition that the material input amount SM is equal to or larger than the predetermined material threshold SM_th. As another example, a first amount may be used as the material input amount SM used in the self-aligned modeling mode, and a second amount greater than the first amount may be used as the material input amount SM used in the high-throughput modeling mode.That is, the self-aligned modeling mode may be a modeling mode in which the material input amount SM is set to a first amount less than the second amount, and the high-throughput modeling mode may be a modeling mode in which the material input amount SM is set to a second amount greater than the first amount. In other words, the self-aligned modeling mode may be a modeling mode that satisfies the condition that the material input amount SM is set to a first amount less than the second amount, and the high-throughput modeling mode may be a modeling mode that satisfies the condition that the material input amount SM is set to a second amount greater than the first amount. The first amount may be equal to or less than the predetermined material threshold SM_th, and the second amount may be equal to or greater than the predetermined material threshold SM_th. As another example, the material input amount SM used in the self-aligned modeling mode may be within a first amount range, and the material input amount SM used in the high-throughput modeling mode may be within a second amount range greater than the first amount range. That is, the self-aligned printing mode may be a printing mode in which the material input amount SM is included in a first amount range that is smaller than a second amount range, and the high-throughput printing mode may be a printing mode in which the material input amount SM is included in a second amount range that is larger than the first amount range. In other words, the self-aligned printing mode may be a printing mode that satisfies the condition that the material input amount SM is included in a first amount range that is smaller than the second amount range, and the high-throughput printing mode may be a printing mode that satisfies the condition that the material input amount SM is included in a second amount range that is larger than the first amount range. Note that the first amount range may be a range that includes an amount equal to or smaller than the predetermined material threshold value SM_th, and the second amount range may be a range that includes an amount equal to or larger than the predetermined material threshold value SM_th.

[0145] The predetermined material threshold SM_th may be a value of the material input amount SM corresponding to the above-described predetermined layer thickness threshold dz_th. In this case, a value that is equal to or greater than a predetermined percentage of the maximum input amount SM_max (see FIG. 18( b)), which is the material input amount SM for forming a structure layer SL having a layer thickness dz equal to the maximum layer thickness dz_max, may be used as the predetermined material threshold SM_th. As described above, examples of the predetermined percentage include at least one of 50% (i.e., half), 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, and 95%.

[0146] 18(b), the slope of the graph may be zero at and near the coordinate point where the layer thickness dz is the maximum layer thickness dz_max. In other words, at and near this coordinate point, the material input amount SM does not need to change even if the nozzle distance D fluctuates (e.g., increases). In this case, the maximum input amount SM_max may be a material input amount SM that satisfies the condition that the layer thickness dz of the structure layer SL to be formed does not change (i.e., the amount of building material M input into the molten pool MP does not change) even if the nozzle distance D fluctuates (e.g., increases).

[0147] Even when the self-aligned modeling mode and the high-throughput modeling mode are distinguished based on the material input amount SM, the control device 2 may switch the modeling mode of the modeling apparatus 1 between the self-aligned modeling mode and the high-throughput modeling mode by controlling (e.g., changing) the nozzle distance D. This is because, as described above, the self-aligned function utilizes the fact that the material input amount SM changes in accordance with changes in the nozzle distance D. For example, the control device 2 may set the modeling mode of the modeling apparatus 1 to the self-aligned modeling mode by setting the nozzle distance D to the nozzle distance D corresponding to the material input amount SM in the self-aligned modeling mode. For example, the control device 2 may set the modeling mode of the modeling apparatus 1 to the high-throughput modeling mode by setting the nozzle distance D to the nozzle distance D corresponding to the material input amount SM in the high-throughput modeling mode. Alternatively, when the self-aligned modeling mode and the high-throughput modeling mode are distinguished based on the material input amount SM, the control device 2 may switch the modeling mode of the modeling apparatus 1 between the self-aligned modeling mode and the high-throughput modeling mode by controlling (e.g., changing) the target layer thickness dz_tgt. This is because changing the target layer thickness dz_tgt changes the amount of movement of the modeling head 121 in the Z-axis direction relative to the stage 131 each time the structure layer SL is formed, which in turn changes the nozzle distance D and, in turn, the material input amount SM. For example, the control device 2 may set the modeling mode of the modeling apparatus 1 to the self-aligned modeling mode by setting the target layer thickness dz_tgt to a target layer thickness dz_tgt that corresponds to the material input amount SM in the self-aligned modeling mode. For example, the control device 2 may set the target layer thickness dz_tgt to a target layer thickness dz_tgt corresponding to the material input amount SM in the high-throughput modeling mode, thereby setting the modeling mode of the modeling device 1 to the high-throughput modeling mode.

[0148] 18( a), under conditions where the nozzle distance D is equal to or less than the maximum layer thickness distance D_max (i.e., under conditions where the material concentration point CP is located below the build surface MS), the slope of the graph may decrease as the nozzle distance D increases. In other words, the relationship between the nozzle distance D and the layer thickness dz may change as the nozzle distance D changes. In this case, if the self-aligned build mode and the high-throughput build mode are distinguished based on at least one of the target layer thickness dz_tgt and the layer thickness dz of the structural layer SL, as described above, the relationship between the nozzle distance D and the layer thickness dz in the self-aligned build mode may differ from the relationship between the nozzle distance D and the layer thickness dz in the high-throughput build mode. In this case, the self-aligned build mode and the high-throughput build mode, which are distinguished based on at least one of the target layer thickness dz_tgt and the layer thickness dz of the structural layer SL, may be distinguished based on the relationship between the nozzle distance D and the layer thickness dz. As an example, as shown in Figure 18 (a), the self-aligned printing mode may be a printing mode that utilizes a characteristic area FA1 in which the relationship between the nozzle distance D and the layer thickness dz is the desired relationship, and the high-throughput printing mode may be a printing mode that utilizes a characteristic area FA2 in which the relationship between the nozzle distance D and the layer thickness dz is not the desired relationship.

[0149] The characteristic regions FA1 and FA2 may be distinguished based on whether the relationship between the nozzle distance D and the layer thickness dz is a linear relationship, which is an example of a desired relationship. In this case, the characteristic region FA1 may include a region where the relationship between the nozzle distance D and the layer thickness dz is linear. The characteristic region FA2 may include a region where the relationship between the nozzle distance D and the layer thickness dz is not linear. In this case, the self-aligned printing mode may be a printing mode where the relationship between the nozzle distance D and the layer thickness dz is linear, and the high-throughput printing mode may be a printing mode where the relationship between the nozzle distance D and the layer thickness dz is not linear.

[0150] The characteristic regions FA1 and FA2 may be distinguished based on the ratio (i.e., the slope of the graph in FIG. 18A, in other words, the differential value) of the increase in the layer thickness dz to the increase in the nozzle distance D. In the following explanation, for convenience of explanation, the ratio of the increase in the layer thickness dz to the increase in the nozzle distance D will be referred to as the layer thickness increase ratio.

[0151] A first example of the characteristic regions FA1 and FA2 distinguished based on the layer thickness increase rate is a case where the layer thickness increase rate in the characteristic region FA1 is greater than the layer thickness increase rate in the characteristic region FA2. That is, a first example of the characteristic regions FA1 and FA2 distinguished based on the layer thickness increase rate is a case where the slope of the graph in the characteristic region FA1 is greater than the slope of the graph in the characteristic region FA2. In this case, the self-aligned printing mode may be a printing mode with a greater layer thickness increase rate than the high-throughput printing mode, or the high-throughput printing mode may be a printing mode with a smaller layer thickness increase rate than the self-aligned printing mode.

[0152] A second example of the characteristic regions FA1 and FA2 distinguished based on the layer thickness increase rate is where the characteristic region FA1 includes a region where the layer thickness increase rate is equal to or greater than a predetermined percentage threshold, and the characteristic region FA2 includes a region where the layer thickness increase rate is equal to or less than the predetermined percentage threshold. That is, a second example of the characteristic regions FA1 and FA2 distinguished based on the layer thickness increase rate is where the slope of the graph in the characteristic region FA1 is equal to or greater than a predetermined percentage threshold, and the slope of the graph in the characteristic region FA2 is equal to or less than a predetermined percentage threshold. In this case, the self-aligned printing mode may be a printing mode where the layer thickness increase rate is equal to or greater than a predetermined percentage threshold, and the high-throughput printing mode may be a printing mode where the layer thickness increase rate is equal to or less than a predetermined percentage threshold.

[0153] The predetermined percentage threshold may be a value of the layer thickness increase rate corresponding to the above-mentioned predetermined layer thickness threshold dz_th. For example, the predetermined percentage threshold may be set to a desired value that allows a characteristic region where the layer thickness dz is equal to or greater than the layer thickness threshold dz_th to be distinguished from a characteristic region where the layer thickness dz is equal to or less than the layer thickness threshold dz_th based on the layer thickness increase rate. In this case, the characteristic region FA1 may include a region where the layer thickness dz is equal to or less than the layer thickness threshold dz_th, and the characteristic region FA2 may include a region where the layer thickness dz is equal to or greater than the layer thickness threshold dz_th.

[0154] The predetermined percentage threshold may be a value of the layer thickness increase rate corresponding to the above-mentioned predetermined distance threshold D_th. For example, the predetermined percentage threshold may be set to a desired value that enables a characteristic region where the nozzle distance D is equal to or greater than the distance threshold D_th and a characteristic region where the nozzle distance D is equal to or less than the distance threshold D_th to be distinguished from each other based on the layer thickness increase rate. In this case, the characteristic region FA1 may include a region where the nozzle distance D is equal to or less than the distance threshold D_th, and the characteristic region FA2 may include a region where the nozzle distance D is equal to or greater than the distance threshold D_th.

[0155] The predetermined percentage threshold may be a value of the layer thickness increase rate corresponding to the above-mentioned predetermined material threshold SM_th. For example, the predetermined percentage threshold may be set to a desired value that allows a characteristic region where the material input amount SM is equal to or greater than the material threshold SM_th and a characteristic region where the material input amount SM is equal to or less than the material threshold SM_th to be distinguished from the layer thickness increase rate. In this case, the characteristic region FA1 may include a region where the material input amount SM is equal to or less than the material threshold SM_th, and the characteristic region FA2 may include a region where the material input amount SM is equal to or greater than the material threshold SM_th.

[0156] A third example of the characteristic regions FA1 and FA2 distinguished based on the layer thickness increase rate is where the characteristic region FA1 includes a region where the layer thickness increase rate is a first rate, and the characteristic region FA2 includes a region where the layer thickness increase rate is a second rate smaller than the first rate. That is, a third example of the characteristic regions FA1 and FA2 distinguished based on the layer thickness increase rate is where the characteristic region FA1 includes a region where the graph slope is a first slope, and the characteristic region FA2 includes a region where the graph slope is a second slope smaller than the first slope. In this case, the self-aligned printing mode may be a printing mode in which the layer thickness increase rate is the first rate greater than the second rate, and the high-throughput printing mode may be a printing mode in which the layer thickness increase rate is the second rate smaller than the first rate. The first rate may be equal to or greater than the predetermined rate threshold, and the second rate may be equal to or less than the predetermined rate threshold.

[0157] A fourth example of the characteristic regions FA1 and FA2 distinguished based on the layer thickness increase rate is where the characteristic region FA1 includes a region where the layer thickness increase rate falls within a first rate range, and the characteristic region FA2 includes a region where the layer thickness increase rate falls within a second rate range that is smaller than the first rate range. That is, a fourth example of the characteristic regions FA1 and FA2 distinguished based on the layer thickness increase rate is where the characteristic region FA1 includes a region where the slope of the graph falls within a first slope range, and the characteristic region FA2 includes a region where the slope of the graph falls within a second slope range that is smaller than the first slope range. In this case, the self-aligned printing mode may be a printing mode where the layer thickness increase rate falls within a first rate range that is larger than the second rate range, and the high-throughput printing mode may be a printing mode where the layer thickness increase rate falls within a second rate range that is smaller than the first rate range. The first ratio range may be a range including ratios equal to or greater than the predetermined ratio threshold value described above, and the second ratio range may be a range including ratios equal to or less than the predetermined ratio threshold value described above.

[0158] A fifth example of the characteristic areas FA1 and FA2 distinguished based on the layer thickness increase rate is an example of the characteristic areas FA1 and FA2 that satisfy the conditions shown in Fig. 19 . Specifically, as shown in Fig. 19 , which is a graph showing the relationship between the layer thickness dz and the nozzle distance D, when the target value of the nozzle distance D is set to the first distance H1 included in the characteristic area FA2, the actual value of the nozzle distance D becomes the first distance H1, and as a result, a structure layer SL is formed in which the layer thickness dz becomes the first layer thickness Z1. In other words, a structured object having the same build height as the first layer thickness Z1 is formed as the structure layer SL. Note that setting the target value of the nozzle distance D to the first distance H1 included in the characteristic area FA2 is equivalent to setting the target layer thickness dz_tgt to the first layer thickness Z1 included in the characteristic area FA2 and corresponding to the first distance H1. Similarly, when the target value of the nozzle distance D is set to the second distance H2 included in the characteristic area FA1 (i.e., the second distance H2 smaller than the first distance H1), the actual value of the nozzle distance D becomes the first distance H1, and as a result, a structure layer SL is formed in which the layer thickness dz becomes the second layer thickness Z2 smaller than the first layer thickness Z1. In other words, a structured object having the same build height as the second layer thickness Z2 is formed as the structure layer SL. Note that setting the target value of the nozzle distance D to the second distance H2 included in the characteristic area FA1 is equivalent to setting the target layer thickness dz_tgt to the second layer thickness Z2 included in the characteristic area FA1 and corresponding to the second distance H2.

[0159] On the other hand, if the target value of the nozzle distance D is set to the first distance H1 but the actual value of the nozzle distance D is the second distance H2, a structure layer SL is formed having a layer thickness dz of the second layer thickness Z2. Similarly, if the target value of the nozzle distance D is set to the second distance H2 but the actual value of the nozzle distance D is the first distance H1, a structure layer SL is formed having a layer thickness dz of the first layer thickness Z1. In other words, the layer thickness dz of the structure layer SL that is actually formed depends on the actual value of the nozzle distance D rather than on the target value of the nozzle distance D.

[0160] In this case, the characteristic area FA2 showing the relationship between the first layer thickness Z1 and the first distance H1 and the characteristic area FA1 showing the relationship between the second layer thickness Z2 and the second distance H2 may satisfy the first condition, as shown in Figure 19, that "when the target value of the nozzle distance D is set to the first distance H1 but the actual value of the nozzle distance D is greater than the first distance H1 by the distance ΔA1, the variation ΔB1 in the layer thickness dz (= first layer thickness Z1 + variation ΔB1) of the structural layer SL formed is smaller than the variation ΔB2 in the layer thickness dz (= second layer thickness Z2 + variation ΔB2) of the structural layer SL formed when the target value of the nozzle distance D is set to the second distance H2 but the actual value of the nozzle distance D is greater than the second distance H2 by the distance ΔA1." Furthermore, the characteristic area FA2 showing the relationship between the first layer thickness Z1 and the first distance H1 and the characteristic area FA1 showing the relationship between the second layer thickness Z2 and the second distance H2 may satisfy the second condition, as shown in Figure 19, that "when the target value of the nozzle distance D is set to the first distance H1 but the actual value of the nozzle distance D is smaller than the first distance H1 by the distance ΔA2, the variation ΔC1 in the layer thickness dz (= first layer thickness Z1 - variation ΔC1) of the structural layer SL formed is smaller than the variation ΔC2 in the layer thickness dz (= second layer thickness Z2 - variation ΔC2) of the structural layer SL formed when the target value of the nozzle distance D is set to the second distance H2 but the actual value of the nozzle distance D is smaller than the second distance H2 by the distance ΔA2."

[0161] When the self-aligned modeling mode and the high-throughput modeling mode are distinguished based on the relationship between the nozzle distance D and the layer thickness dz, the control device 2 may switch the modeling mode of the modeling apparatus 1 between the self-aligned modeling mode and the high-throughput modeling mode by controlling (e.g., changing) the nozzle distance D. For example, the control device 2 may set the modeling mode of the modeling apparatus 1 to the self-aligned modeling mode by setting the nozzle distance D to the nozzle distance D included in the characteristic area FA1 corresponding to the self-aligned modeling mode. For example, the control device 2 may set the modeling mode of the modeling apparatus 1 to the high-throughput modeling mode by setting the nozzle distance D to the nozzle distance D included in the characteristic area FA2 corresponding to the high-throughput modeling mode. Alternatively, when the self-aligned printing mode and the high-throughput printing mode are distinguished based on the relationship between the nozzle distance D and the layer thickness dz, the control device 2 may switch the printing mode of the modeling apparatus 1 between the self-aligned printing mode and the high-throughput printing mode by controlling (e.g., changing) the target layer thickness dz_tgt. For example, the control device 2 may set the printing mode of the modeling apparatus 1 to the self-aligned printing mode by setting the target layer thickness dz_tgt to the target layer thickness dz_tgt included in the property area FA1 corresponding to the self-aligned printing mode. For example, the control device 2 may set the printing mode of the modeling apparatus 1 to the high-throughput printing mode by setting the target layer thickness dz_tgt to the target layer thickness dz_tgt included in the property area FA2 corresponding to the high-throughput printing mode.

[0162] 18(b), under conditions where the nozzle distance D is equal to or less than the maximum layer thickness distance D_max (i.e., under conditions where the material concentration point CP is located below the printing surface MS), the slope of the graph may decrease as the nozzle distance D increases. In other words, the relationship between the nozzle distance D and the material input amount SM may also change as the nozzle distance D changes. In this case, if the self-aligned printing mode and the high-throughput printing mode are distinguished based on at least one of the target layer thickness dz_tgt and the layer thickness dz of the structural layer SL as described above, the relationship between the nozzle distance D and the material input amount SM in the self-aligned printing mode may differ from the relationship between the nozzle distance D and the material input amount SM in the high-throughput printing mode. In this case, the self-aligned printing mode and the high-throughput printing mode, which are distinguished based on at least one of the target layer thickness dz_tgt and the layer thickness dz of the structural layer SL, may also be distinguished based on the relationship between the nozzle distance D and the material input amount SM. As an example, as shown in Figure 18 (b), the self-aligned printing mode may be a printing mode that utilizes characteristic area FA3 in which the relationship between nozzle distance D and material input amount SM is the desired relationship, and the high-throughput printing mode may be a printing mode that utilizes characteristic area FA4 in which the relationship between nozzle distance D and material input amount SM is not the desired relationship.

[0163] The characteristic regions FA3 and FA4 may be distinguished based on whether the relationship between the nozzle distance D and the material input amount SM is a linear relationship, which is an example of a desired relationship. In this case, the characteristic region FA3 may include a region where the relationship between the nozzle distance D and the material input amount SM is linear. The characteristic region FA4 may include a region where the relationship between the nozzle distance D and the material input amount SM is not linear. In this case, the self-aligned printing mode may be a printing mode where the relationship between the nozzle distance D and the material input amount SM is linear, and the high-throughput printing mode may be a printing mode where the relationship between the nozzle distance D and the material input amount SM is not linear.

[0164] The characteristic areas FA3 and FA4 may be distinguished based on the ratio (i.e., the slope of the graph in FIG. 18(b), in other words, the differential value) of the increase in the material input amount SM relative to the increase in the nozzle distance D. In the following explanation, for convenience of explanation, the ratio of the increase in the material input amount SM relative to the increase in the nozzle distance D will be referred to as the material increase ratio.

[0165] A first example of the characteristic regions FA3 and FA4 distinguished based on the material increase rate is a case where the material increase rate in the characteristic region FA3 is greater than the material increase rate in the characteristic region FA4. That is, a first example of the characteristic regions FA3 and FA4 distinguished based on the material increase rate is a case where the slope of the graph in the characteristic region FA3 is greater than the slope of the graph in the characteristic region FA4. In this case, the self-aligned printing mode may be a printing mode with a greater material increase rate than the high-throughput printing mode, or the high-throughput printing mode may be a printing mode with a smaller material increase rate than the self-aligned printing mode.

[0166] A second example of the characteristic regions FA3 and FA4 distinguished based on the material increase rate is where the characteristic region FA3 includes a region where the material increase rate is equal to or greater than the predetermined percentage threshold, and the characteristic region FA4 includes a region where the material increase rate is equal to or less than the predetermined percentage threshold. That is, a second example of the characteristic regions FA3 and FA4 distinguished based on the material increase rate is where the slope of the graph in the characteristic region FA3 is equal to or greater than the predetermined percentage threshold, and the slope of the graph in the characteristic region FA4 is equal to or less than the predetermined percentage threshold. In this case, the self-aligned printing mode may be a printing mode where the material increase rate is equal to or greater than the predetermined percentage threshold, and the high-throughput printing mode may be a printing mode where the material increase rate is equal to or less than the predetermined percentage threshold.

[0167] The predetermined percentage threshold may be a value of the material increase percentage corresponding to the above-mentioned predetermined layer thickness threshold dz_th. For example, the predetermined percentage threshold may be set to a desired value that allows a characteristic region where the layer thickness dz is equal to or greater than the layer thickness threshold dz_th to be distinguished from a characteristic region where the layer thickness dz is equal to or less than the layer thickness threshold dz_th based on the material increase percentage. In this case, the characteristic region FA3 may include a region where the layer thickness dz is equal to or less than the layer thickness threshold dz_th, and the characteristic region FA4 may include a region where the layer thickness dz is equal to or greater than the layer thickness threshold dz_th.

[0168] The predetermined percentage threshold may be a value of the material increase percentage corresponding to the above-mentioned predetermined distance threshold D_th. For example, the predetermined percentage threshold may be set to a desired value that enables a characteristic region where the nozzle distance D is equal to or greater than the distance threshold D_th to be distinguished from a characteristic region where the nozzle distance D is equal to or less than the distance threshold D_th based on the material increase percentage. In this case, the characteristic region FA3 may include a region where the nozzle distance D is equal to or less than the distance threshold D_th, and the characteristic region FA4 may include a region where the nozzle distance D is equal to or greater than the distance threshold D_th.

[0169] The predetermined percentage threshold may be a value of the material increase percentage corresponding to the above-mentioned predetermined material threshold SM_th. For example, the predetermined percentage threshold may be set to a desired value that allows a characteristic region where the material input amount SM is equal to or greater than the material threshold SM_th to be distinguished from a characteristic region where the material input amount SM is equal to or less than the material threshold SM_th, based on the material increase percentage. In this case, the characteristic region F3 may include a region where the material input amount SM is equal to or less than the material threshold SM_th, and the characteristic region FA4 may include a region where the material input amount SM is equal to or greater than the material threshold SM_th.

[0170] A third example of the characteristic regions FA3 and FA4 distinguished based on the material increase rate is where the characteristic region FA3 includes a region where the material increase rate is a first rate, and the characteristic region FA4 includes a region where the material increase rate is a second rate that is smaller than the first rate. That is, a third example of the characteristic regions FA3 and FA4 distinguished based on the material increase rate is where the characteristic region FA3 includes a region where the graph slope is a first slope, and the characteristic region FA4 includes a region where the graph slope is a second slope that is smaller than the first slope. In this case, the self-aligned printing mode may be a printing mode in which the material increase rate is the first rate that is larger than the second rate, and the high-throughput printing mode may be a printing mode in which the material increase rate is the second rate that is smaller than the first rate.

[0171] A fourth example of the characteristic regions FA3 and FA4 distinguished based on the material increase rate is where the characteristic region FA3 includes a region where the material increase rate falls within a first rate range, and the characteristic region FA4 includes a region where the material increase rate falls within a second rate range that is smaller than the first rate range. That is, a fourth example of the characteristic regions FA3 and FA4 distinguished based on the material increase rate is where the characteristic region FA3 includes a region where the slope of the graph falls within a first slope range, and the characteristic region FA4 includes a region where the slope of the graph falls within a second slope range that is smaller than the first slope range. In this case, the self-aligned printing mode may be a printing mode where the material increase rate falls within the first rate range that is larger than the second rate range, and the high-throughput printing mode may be a printing mode where the material increase rate falls within the second rate range that is smaller than the first rate range.

[0172] A fifth example of the characteristic areas FA3 and FA4 distinguished based on the material increase rate is the example of the characteristic areas FA3 and FA4 that satisfy the conditions shown in Figure 20. Specifically, as shown in Figure 20, which is a graph showing the relationship between the material input rate SM and the nozzle distance D, when the target value of the nozzle distance D is set to the third distance H3 included in the characteristic area FA4, the actual value of the nozzle distance D becomes the third distance H3, and as a result, the material input rate SM becomes the third input rate Z3. Similarly, when the target value of the nozzle distance D is set to the fourth distance H4 included in the characteristic area FA3 (i.e., the fourth distance H4 smaller than the third distance H3), the actual value of the nozzle distance D becomes the third distance H3, and as a result, the material input rate SM becomes the fourth input rate Z4 smaller than the third input rate Z3.

[0173] On the other hand, if the target value of the nozzle distance D is set to the third distance H3 but the actual value of the nozzle distance D becomes the fourth distance H4, the material input amount SM becomes the fourth input amount Z4. Similarly, if the target value of the nozzle distance D is set to the fourth distance H4 but the actual value of the nozzle distance D becomes the third distance H3, the material input amount SM becomes the third input amount Z3. In other words, the actual material input amount SM depends on the actual value of the nozzle distance D rather than on the target value of the nozzle distance D.

[0174] In this case, the characteristic area FA4 showing the relationship between the third input amount Z3 and the third distance H3 and the characteristic area FA3 showing the relationship between the fourth input amount Z4 and the fourth distance H4 may satisfy the third condition, as shown in Figure 20, that is, "when the target value of the nozzle distance D is set to the third distance H3 but the actual value of the nozzle distance D is greater than the third distance H3 by the distance ΔA3, the fluctuation ΔB3 in the material input amount SM (= the third input amount Z3 + the fluctuation ΔB3) is smaller than the fluctuation ΔB4 in the material input amount SM (= the fourth input amount Z4 + the fluctuation ΔB4) when the target value of the nozzle distance D is set to the fourth distance H4 but the actual value of the nozzle distance D is greater than the fourth distance H4 by the distance ΔA3." Furthermore, the characteristic area FA4 showing the relationship between the third input amount Z3 and the third distance H3 and the characteristic area FA3 showing the relationship between the fourth input amount Z4 and the fourth distance H4 may satisfy a fourth condition, as shown in Figure 20, which is that "the variation ΔC3 in the material input amount SM (= third input amount Z3 - variation ΔC3) when the target value of the nozzle distance D is set to the third distance H3 but the actual value of the nozzle distance D is smaller than the third distance H3 by the distance ΔA4 is smaller than the variation ΔC4 in the material input amount SM (= fourth input amount Z4 - variation ΔC4) when the target value of the nozzle distance D is set to the fourth distance H4 but the actual value of the nozzle distance D is smaller than the fourth distance H4 by the distance ΔA4."

[0175] When the self-aligned modeling mode and the high-throughput modeling mode are distinguished based on the relationship between the nozzle distance D and the material input amount SM, the control device 2 may switch the modeling mode of the modeling apparatus 1 between the self-aligned modeling mode and the high-throughput modeling mode by controlling (e.g., changing) the nozzle distance D. For example, the control device 2 may set the modeling mode of the modeling apparatus 1 to the self-aligned modeling mode by setting the nozzle distance D to the nozzle distance D included in the property area FA3 corresponding to the self-aligned modeling mode. For example, the control device 2 may set the modeling mode of the modeling apparatus 1 to the high-throughput modeling mode by setting the nozzle distance D to the nozzle distance D included in the property area FA4 corresponding to the high-throughput modeling mode. Alternatively, when the self-aligned modeling mode and the high-throughput modeling mode are distinguished based on the relationship between the nozzle distance D and the material input amount SM, the control device 2 may switch the modeling mode of the modeling apparatus 1 between the self-aligned modeling mode and the high-throughput modeling mode by controlling (e.g., changing) the target material input amount SM_tgt. For example, the control device 2 may set the modeling mode of the modeling apparatus 1 to the self-aligned modeling mode by setting the target material input amount SM_tgt to the target material input amount SM_tgt included in the property area FA3 corresponding to the self-aligned modeling mode. For example, the control device 2 may set the modeling mode of the modeling apparatus 1 to the high-throughput modeling mode by setting the target material input amount SM_tgt to the target material input amount SM_tgt included in the property area FA4 corresponding to the high-throughput modeling mode.

[0176] (2-4) Modeling Operation Including Modeling Mode Switching Operation Next, a description will be given of the flow of the modeling operation including the modeling mode switching operation for switching the modeling mode of the modeling apparatus 1 between the self-aligned modeling mode and the high-throughput modeling mode, with reference to Fig. 21. Fig. 21 is a flowchart showing the flow of the modeling operation including the modeling mode switching operation.

[0177] 21 , first, the control device 2 selects the high-throughput printing mode as the printing mode of the modeling apparatus 1 (step S11). That is, the arithmetic device 21 selects the high-throughput printing mode as the default printing mode (or initial printing mode) of the modeling apparatus 1 (step S11). Because the structure layer SL has not been printed at this stage, the phenomenon of the effect of the self-alignment function described with reference to FIGS. 15 to 17 being weakened does not occur. For this reason, the control device 2 first selects the high-throughput printing mode as the printing mode of the modeling apparatus 1 in order to prioritize improving the throughput of the modeling apparatus 1. However, the arithmetic device 21 may also select the self-alignment printing mode as the default printing mode (or initial printing mode) of the modeling apparatus 1.

[0178] For convenience of explanation, the following description will be given of an example in which the modeling mode of the modeling apparatus 1 is switched by controlling (changing) the target layer thickness dz_tgt. Therefore, in step S11, the control device 2 may set the target layer thickness dz_tgt to a target layer thickness dz_tgt corresponding to the high-throughput modeling mode. That is, in this embodiment, the target layer thickness dz_tgt corresponding to the high-throughput modeling mode is used as the default target layer thickness dz_tgt (or the initial target layer thickness dz_tgt). The following description will be given of an example in which the first layer thickness dz#31 corresponding to the high-throughput modeling mode is used as the default target layer thickness dz_tgt (or the initial target layer thickness dz_tgt), as shown in FIG. 22 , which is a graph showing the relationship between the nozzle distance D and the layer thickness dz.

[0179] As described above, since the target layer thickness dz_tgt is equivalent to the amount of movement of the modeling head 121 relative to the stage 131 each time the structural layer SL is modeled, for the sake of convenience, the following explanation may be considered to describe an example of switching the modeling mode of the modeling device 1 by controlling (changing) the amount of movement of the modeling head 121 relative to the stage 131 each time the structural layer SL is modeled.

[0180] Furthermore, when the high-throughput printing mode is selected as the initial printing mode of the printing device 1, the calculation device 71 may read out, from the memory device 72, processing path information TPI that includes multiple intra-layer path information LPI, including instructions to move the printing head 121 along the Z-axis direction relative to the stage 131 by an amount corresponding to the first layer thickness dz#31 each time a structural layer SL is printed.

[0181] Thereafter, the control device 2 controls the modeling device 1 to model one structural layer SL (in this case, the first structural layer SL) (steps S12 and S13). Specifically, based on the intra-layer pass information LPI for modeling the one structural layer SL, the control device 2 moves the modeling head 121 so that the modeling head 121 is positioned at an initial position where the nozzle distance D is the nozzle distance D corresponding to the target layer thickness dz_tgt (step S12). Specifically, as shown in FIG. 22 , the nozzle distance D corresponding to the first layer thickness dz#31 set as the target layer thickness dz_tgt is distance D#31. In this case, based on the intra-layer pass information LPI for modeling the one structural layer SL, the control device 2 moves the modeling head 121 so that the modeling head 121 is positioned at an initial position where the nozzle distance D is distance D#31 (step S12). As described above, the control device 2 may move the stage 131 in addition to or instead of the object-forming head 121 so that the object-forming head 121 is positioned at its initial position. In the following description, for simplicity's sake, an example will be described in which the control device 2 moves the object-forming head 121 in step S12. Thereafter, the control device 2 controls the object-forming apparatus 1 to form one structure layer SL based on the intra-layer pass information LPI for forming the one structure layer SL (step S13). As a result, the object-forming apparatus 1 forms the one structure layer SL (step S13).

[0182] While the building apparatus 1 is building one structure layer SL, the imaging device 17 images the building surface MS on which the one structure layer SL is being built (step S14). In particular, the imaging device 17 images the molten pool MP formed on the building surface MS to build the one structure layer SL (step S14). As a result, the imaging device 17 generates a molten pool image IMG in which the building surface MS (in particular, the molten pool MP) is captured. The imaging device 17 outputs the generated molten pool image IMG to the control device 2.

[0183] Thereafter, the control device 2 calculates the distance between the material nozzle 1212 and the build surface MS (i.e., the actual nozzle distance D) based on the molten pool image IMG generated by the imaging device 17 (step S15). Note that the method for calculating the nozzle distance D has already been explained.

[0184] Then, after the molding device 1 has finished molding one structural layer SL, the control device 2 determines whether the molding device 1 has molded all structural layers SL that need to be molded in order to mold the three-dimensional structure ST (step S16).

[0185] If the result of the judgment in step S16 is that the molding device 1 has molded all of the structural layers SL that need to be molded to mold the three-dimensional structure ST (step S16: Yes), the control device 2 terminates the molding operation shown in Figure 21.

[0186] On the other hand, if it is determined in step S16 that the modeling apparatus 1 has not yet modeled all of the structural layers SL that should be modeled to model the three-dimensional structure ST (step S16: No), the control device 2 controls the modeling apparatus 1 to model the next structural layer SL. However, before the modeling apparatus 1 models the next structural layer SL, the control device 2 determines whether the distance difference, which is the difference between the nozzle distance D calculated in step S15 and the target value of the nozzle distance D, satisfies a predetermined distance condition. As the target value of the nozzle distance D, for example, the nozzle distance D corresponding to the first layer thickness dz#31 set as the target layer thickness dz_tgt in step S11 (i.e., distance D#31) may be used.

[0187] In step S17, the control device 2 may determine whether the distance difference satisfies a first distance condition or a second distance condition. The first distance condition may include a condition that the distance difference is not so large that the effect of the self-alignment function described with reference to Figures 15 to 17 is reduced. On the other hand, the second distance condition may include a condition that the distance difference is so large that the effect of the self-alignment function described with reference to Figures 15 to 17 is reduced.

[0188] An example of the first distance condition may be a condition that the distance difference is less than a predetermined judgment threshold. An example of the second distance condition may be a condition that the distance difference exceeds a predetermined judgment threshold. The predetermined judgment threshold may be a desired value that can distinguish, based on the distance difference, between a state in which the distance difference is large enough to reduce the effect of the self-alignment function described with reference to Figures 15 to 17 and a state in which the distance difference is not large enough to reduce the effect of the self-alignment function described with reference to Figures 15 to 17. In this case, in step S17, the control device 2 may determine whether the distance difference exceeds or falls below the predetermined judgment threshold.

[0189] If the distance difference exceeds a predetermined determination threshold, the nozzle distance D calculated in step S15 changes (e.g., increases or decreases) relative to the target value of the nozzle distance D. Specifically, if the distance difference exceeds a predetermined determination threshold, the nozzle distance D calculated in step S15 changes (e.g., increases or decreases) relative to the target value of the nozzle distance D by more than the determination threshold. Therefore, as an example of the first distance condition, a condition that the nozzle distance D calculated in step S15 does not change (e.g., does not increase or decrease) relative to the target value of the nozzle distance D may be used. As an example of the first distance condition, a condition that the nozzle distance D calculated in step S15 does not change (e.g., does not increase or decrease) relative to the target value of the nozzle distance D by an amount that exceeds the determination threshold may be used. As an example of the second distance condition, a condition that the nozzle distance D calculated in step S15 changes (e.g., increases or decreases) relative to the target value of the nozzle distance D. As an example of the second distance condition, a condition may be used in which the nozzle distance D calculated in step S15 has changed (for example, increased or decreased) to such an extent that the change in distance exceeds a judgment threshold value relative to the target value of the nozzle distance D.

[0190] As explained above with reference to FIG. 5 , when the nozzle distance D changes, the position at which the weld pool MP appears in the weld pool image IMG changes. That is, when the nozzle distance D changes, the position of the weld pool MP in the weld pool image IMG shifts, as explained above. In this case, the distance difference between the nozzle distance D calculated in step S15 and the target value of the nozzle distance D increases as the difference between the position at which the weld pool MP appears in the weld pool image IMG and the position at which the weld pool MP should actually appear increases. In other words, the distance difference between the nozzle distance D calculated in step S15 and the target value of the nozzle distance D increases as the positional shift of the weld pool MP in the weld pool image IMG increases. Therefore, as the first distance condition for the nozzle distance D or in place of the first distance condition for the nozzle distance D, a condition that the difference between the position where the weld pool MP is reflected in the weld pool image IMG and the position where the weld pool MP should actually be reflected (i.e., the positional deviation of the weld pool MP in the weld pool image IMG) is below a predetermined judgment threshold may be used. As the second distance condition for the nozzle distance D or in place of the second distance condition for the nozzle distance D, a condition that the difference between the position where the weld pool MP is reflected in the weld pool image IMG and the position where the weld pool MP should actually be reflected (i.e., the positional deviation of the weld pool MP in the weld pool image IMG) is above a predetermined judgment threshold may be used. The predetermined judgment threshold may be a desired value that can distinguish, from the positional deviation of the molten pool MP in the molten pool image IMG, between a state in which the positional deviation of the molten pool MP is so large that the effect of the self-alignment function described with reference to Figures 15 to 17 is reduced and a state in which the positional deviation of the molten pool MP is not so large that the effect of the self-alignment function described with reference to Figures 15 to 17 is reduced. In this case, the control device 2 does not necessarily have to calculate the nozzle distance D in step S15.

[0191] If the determination result in step S17 is that the distance difference satisfies the first distance criterion (i.e., does not satisfy the second distance criterion) (step S17: No), it is assumed that the distance difference is not so large that the effect of the self-alignment function described with reference to FIGS. 15 to 17 is weakened. In other words, it is assumed that the modeling apparatus 1 is modeling a structure layer SL whose layer thickness dz is the same as or close to the first layer thickness dz#31. As a result, it is assumed that the height of the modeled object including the structure layer SL that has been modeled by the modeling apparatus 1 (i.e., the three-dimensional structure ST being modeled) is the same as or close to the assumed height.

[0192] Therefore, in this case, the control device 2 does not need to switch the modeling mode of the modeling apparatus 1. The control device 2 may maintain the modeling mode of the modeling apparatus 1 as the high-throughput modeling mode. The control device 2 may control the modeling apparatus 1 to model the next structure layer SL in the high-throughput modeling mode. The control device 2 may control the modeling apparatus 1 to continue the modeling operation in the high-throughput modeling mode. In this case, the control device 2 moves the modeling head 121 relative to the stage 131 along the Z-axis by an amount corresponding to the first layer thickness dz#31, based on the intra-layer pass information LPI for modeling the next structure layer SL (step S12). Specifically, based on the intra-layer path information LPI for forming the next structure layer SL, the control device 2 moves the modeling head 121 along the Z axis so that the modeling head 121 is separated from the object including the structure layer SL that has already been formed by the modeling device 1 (i.e., the three-dimensional structure ST being modeled) by a distance equivalent to the first layer thickness dz#31 (step S12). Thereafter, the operations from step S13 to step S17 are performed again.

[0193] On the other hand, if the determination result in step S17 is that the distance difference satisfies the second distance criterion (i.e., does not satisfy the first distance criterion) (step S17: Yes), it is assumed that the distance difference has become large enough to cause the phenomenon of weakening of the effect of the self-alignment function described with reference to FIGS. 15 to 17 . In other words, it is assumed that the modeling apparatus 1 may be modeling a structure layer SL whose layer thickness dz is significantly different from the first layer thickness dz#31. As a result, it is assumed that the height of the modeled object including the structure layer SL that has been modeled by the modeling apparatus 1 (i.e., the three-dimensional structure ST being modeled) may be significantly different from the expected height.

[0194] Therefore, in this case, the control device 2 switches the modeling mode of the modeling apparatus 1 (Step S18). Specifically, the control device 2 switches the modeling mode of the modeling apparatus 1 from the high-throughput modeling mode to the self-aligned modeling mode. That is, the control device 2 selects the self-aligned modeling mode as the modeling mode of the modeling apparatus 1 in order to prioritize improving the modeling accuracy of the modeling apparatus 1. Therefore, the control device 2 may change the target layer thickness dz_tgt from the target layer thickness dz_tgt corresponding to the high-throughput modeling mode to the target layer thickness dz_tgt corresponding to the self-aligned modeling mode (Step S18). That is, the control device 2 may set the target layer thickness dz_tgt to the target layer thickness dz_tgt corresponding to the self-aligned modeling mode. In the following description, an example will be described in which the control device 2 sets the target layer thickness dz_tgt to the second layer thickness dz#32 corresponding to the self-aligned printing mode in step S18, as shown in Fig. 22, which is a graph showing the relationship between the nozzle distance D and the layer thickness dz. As shown in Fig. 22, the second layer thickness dz#32 corresponding to the self-aligned printing mode is thinner than the first layer thickness dz#31 corresponding to the high-throughput printing mode.

[0195] In this case, before forming the next structure layer SL, the control device 2 moves the model-forming head 121 relative to the stage 131 along the Z axis by a movement amount corresponding to the second layer thickness dz#32 (step S12). Specifically, the control device 2 moves the model-forming head 121 so that the model-forming head 121 is separated along the Z axis by a distance corresponding to the second layer thickness dz#32 from the object including the structure layer SL that has been formed by the model-forming device 1 (i.e., the three-dimensional structure ST being formed) (step S12). As a result, the nozzle distance D changes compared to when the model-forming head 121 moves relative to the stage 131 along the Z axis by a movement amount corresponding to the first layer thickness dz#31. Typically, because the second layer thickness dz#32 is thinner than the first layer thickness dz#31, the nozzle distance D is shorter compared to when the modeling head 121 moves along the Z axis relative to the stage 131 by an amount corresponding to the first layer thickness dz#31. Here, as described above, if the intra-layer pass information LPI includes an instruction to move the modeling head 121 along the Z axis relative to the stage 131 by an amount corresponding to the first layer thickness dz#31 each time a structural layer SL is modeled, the control device 2 may correct the amount of movement in the Z axis direction indicated by the intra-layer pass information LPI (i.e., the indicated value of the Z position) using the second layer thickness dz#32 corresponding to the self-aligned modeling mode, and move the modeling head 121 so that the modeling head 121 moves along the Z axis relative to the stage 131 by an amount corresponding to the second layer thickness dz#32, based on the intra-layer pass information LPI with the corrected amount of movement in the Z axis direction. That is, the control device 2 may modify the processing path information TPI in accordance with the switching of the modeling mode. However, as will be described later in a first modified example, the control device 2 may also switch the modeling mode without modifying the processing path information TPI.

[0196] Thereafter, the operations from step S13 to step S17 are performed again.

[0197] The above-described operation is repeated until it is determined that the modeling apparatus 1 has completed modeling of all the structural layers SL to be modeled in order to model the three-dimensional structure ST (Step S16: Yes). Therefore, to briefly summarize the above-described operation, when it is determined that the distance difference satisfies the first distance criterion (for example, the distance difference is below the determination threshold) in a situation where the modeling mode of the modeling apparatus 1 is set to the high-throughput modeling mode (that is, the target layer thickness dz_tgt is set to the first layer thickness dz#31), the control device 2 controls the modeling apparatus 1 to move the modeling head 121 along the Z-axis direction relative to the stage 131 by an amount corresponding to the first layer thickness dz#31 every time a structural layer SL is modeled, and then to continue the operation of modeling the next structural layer SL. On the other hand, when it is determined that the distance difference satisfies the second distance criterion (for example, the distance difference exceeds the determination threshold) under a situation in which the modeling mode of the modeling apparatus 1 is set to the high-throughput modeling mode (i.e., the target layer thickness dz_tgt is set to the first layer thickness dz#31), the control device 2 switches the modeling mode of the modeling apparatus 1 to the self-aligned modeling mode (i.e., sets the target layer thickness dz_tgt to the second layer thickness dz#32). In other words, the control device 2 controls the modeling apparatus 1 so that each time a structure layer SL is modeled, the modeling head 121 moves along the Z-axis direction relative to the stage 131 by an amount equivalent to the second layer thickness dz#32, and then models the next structure layer SL. Furthermore, when the modeling mode of the modeling device 1 is set to the self-aligned modeling mode (i.e., the target layer thickness dz_tgt is set to the second layer thickness dz#32) and it is determined that the distance difference satisfies the second distance criterion (for example, the distance difference exceeds the judgment threshold), the control device 2 controls the modeling device 1 to move the modeling head 121 along the Z-axis direction relative to the stage 131 by an amount equivalent to the second layer thickness dz#32 each time a structural layer SL is modeled, and then continue the operation of modeling the next structural layer SL.On the other hand, when it is determined that the distance difference satisfies the first distance criterion (for example, the distance difference is below the determination threshold) under a situation in which the modeling mode of the modeling apparatus 1 is set to the self-aligned modeling mode (i.e., the target layer thickness dz_tgt is set to the second layer thickness dz#32), the control device 2 switches the modeling mode of the modeling apparatus 1 to the high-throughput modeling mode (i.e., sets the target layer thickness dz_tgt to the first layer thickness dz#31). In other words, the control device 2 controls the modeling apparatus 1 so that each time a structure layer SL is modeled, the modeling head 121 moves along the Z-axis direction relative to the stage 131 by an amount equivalent to the first layer thickness dz#31, and then models the next structure layer SL.

[0198] As described above, in the present embodiment, the control device 2 selects the modeling mode for modeling another structural layer SL to be modeled after the first structural layer SL, based on the nozzle distance D calculated during the period in which one structural layer SL is being modeled. In this case, the control device 2 changes the modeling mode as needed between the end of modeling of the first structural layer SL and the start of modeling of the other structural layer SL. In other words, the control device 2 sets the target layer thickness dz_tgt used for modeling the other structural layer SL to be modeled after the first structural layer SL, based on the nozzle distance D calculated during the period in which one structural layer SL is being modeled. In other words, the control device 2 changes the target layer thickness dz_tgt as needed between the end of modeling of the first structural layer SL and the start of modeling the other structural layer SL.

[0199] On the other hand, the control device 2 does not need to change the modeling mode during the period in which one structural layer SL or another structural layer SL is being modeled, based on the nozzle distance D calculated during the period in which one structural layer SL is being modeled. In other words, the control device 2 does not need to change the target layer thickness dz_tgt during the period in which one structural layer SL or another structural layer SL is being modeled, based on the nozzle distance D calculated during the period in which one structural layer SL is being modeled.

[0200] However, the control device 2 may change the modeling mode during the period in which one structural layer SL or another structural layer SL is being modeled, based on the nozzle distance D calculated during the period in which one structural layer SL is being modeled. In other words, the control device 2 may change the target layer thickness dz_tgt during the period in which one structural layer SL or another structural layer SL is being modeled, based on the nozzle distance D calculated during the period in which one structural layer SL is being modeled.

[0201] Here, with reference to FIG. 23 , an example of a three-dimensional structure ST formed by a forming operation including a forming mode switching operation will be described. First, as shown in FIG. 23( a), the forming apparatus 1 forms a first structural layer SL#1 having a first layer thickness dz#31 in the high-throughput forming mode. Specifically, the forming apparatus 1 moves the forming head 121 relative to the stage 131 so that the nozzle distance D becomes a distance D#31 corresponding to the first layer thickness dz#31. Then, the forming apparatus 1 forms the first structural layer SL#1. As a result, as shown in FIG. 23( b), the first structural layer SL#1 having the first layer thickness dz#31 is formed.

[0202] Then, the modeling apparatus 1 models a second structural layer SL#2 having a first layer thickness dz#31 in the high-throughput modeling mode. Specifically, the modeling apparatus 1 moves the modeling head 121 relative to the stage 131 along the Z-axis direction by a movement amount corresponding to the first layer thickness dz#31. As a result, as shown in FIG. 23( c), the nozzle distance D, which is the distance between the surface of the structural layer SL#1 (i.e., the modeling surface MS) and the material nozzle 1212, becomes the first distance D#31. Then, the modeling apparatus 1 models a structural layer SL#2. As a result, as shown in FIG. 23( d), a first structural layer SL#2 having a first layer thickness dz#31 is modeled on the structural layer SL#1.

[0203] Thereafter, similar operations are repeated until all structural layers SL constituting the three-dimensional structure ST to be formed on the workpiece W are formed. Here, as shown in Fig. 23(e), an example will be described in which the layer thicknesses dz of the third structural layer SL#3 and the fourth structural layer SL#4 formed on the structural layer SL#2 become thinner than the first layer thickness dz#31, and as a result, the nozzle distance D becomes a distance D#33 that is longer than the distance D#31, and as a result, at the stage where the formation of the structural layer SL#4 is completed, it is determined in step S17 of Fig. 21 that the distance difference (in this case, the difference between the distance D#33 that is the current nozzle distance and the distance D#31 that is the target value of the nozzle distance D) exceeds the determination threshold.

[0204] In this case, the control device 2 switches the modeling mode of the modeling apparatus 1 from the high-throughput modeling mode to the self-aligned modeling mode. Therefore, the modeling apparatus 1 models the structural layer SL#5 on the structural layer SL#4 in the self-aligned modeling mode. Therefore, as shown in FIG. 23( f), the modeling apparatus 1 moves the modeling head 121 along the Z-axis direction relative to the stage 131 by a movement amount equivalent to the second layer thickness dz#32. The modeling apparatus 1 then models the structural layer SL#5. As a result, as shown in FIG. 23( g), the structural layer SL#5 is modeled on the structural layer SL#4. Thereafter, as shown in FIG. 23( h), the modeling apparatus 1 continues to model the structural layer SL in the self-aligned modeling mode until it is determined that the distance difference is below the determination threshold. FIG. 23( h) shows an example in which structural layers SL#5 to SL#7 are modeled.

[0205] Here, the layer thickness dz of the structural layers SL#5 to SL#7 formed in the self-aligned forming mode is thinner than the layer thickness dz of the structural layers SL#5 to SL#7 formed if the forming mode had not been switched. Furthermore, compared to the case where the forming mode had not been switched, the movement amount of the forming head 121 relative to the stage 131 each time a structural layer SL is formed (i.e., the movement amount corresponding to the target layer thickness dz_tgt) is reduced. Therefore, each time a structural layer SL is formed in the self-aligned forming mode, the nozzle distance D, which has become longer than the distance D#31, which is the original target value, gradually becomes shorter. In other words, the nozzle distance D gradually converges to the distance D#31, which is the original target value. As a result, at an appropriate time, it is determined that the distance difference is below the determination threshold, as shown in FIG. 23( h).

[0206] In this case, the control device 2 switches the modeling mode of the modeling apparatus 1 to the high-throughput modeling mode. Therefore, the modeling apparatus 1 models the subsequent structural layers SL in the high-throughput modeling mode. As a result, as shown in FIG. 23(i), relatively thick structural layers SL (in the example shown in FIG. 23(i), structural layers SL#8 to SL#9 having a first layer thickness dz#31) are modeled on top of the relatively thin structural layer SL#7 modeled in the self-aligned modeling mode. Thereafter, the same operation is repeated.

[0207] As described above, when a modeling operation including a modeling mode switching operation is performed, an operation of forming at least one structure layer SL in the high-throughput modeling mode and an operation of forming at least one structure layer SL in the self-aligned modeling mode are alternately repeated. As an example, an operation of forming at least one first structure layer SL in the high-throughput modeling mode, an operation of forming at least one structure layer SL on the first structure layer SL in the self-aligned modeling mode, and an operation of forming at least one structure layer SL on the second structure layer SL in the high-throughput modeling mode are performed. In this case, the technical problems illustrated in FIGS. 16( a) to 16( h) do not occur compared to when a modeling operation not including a modeling mode switching operation is performed. Specifically, even if the nozzle distance D becomes longer than the original target distance (specifically, the distance D#31 corresponding to the high-throughput modeling mode) due to the structure layer SL being thinner than the target layer thickness dz_tgt, the nozzle distance D gradually becomes shorter as the modeling mode is switched. In other words, even if the nozzle distance D becomes longer than the original target distance (specifically, the distance D#31 corresponding to the high-throughput printing mode), the nozzle distance D gradually converges to the original target value, the distance D#31, as the printing mode is switched. As a result, as shown in FIGS. 16( a) to 16(h), the structural layer SL with a layer thickness dz thinner than the target layer thickness dz_tgt (specifically, the first layer thickness dz#31 corresponding to the high-throughput printing mode) will no longer be continuously printed. In other words, the state of the printing apparatus 1 returns from a state in which a structural layer SL with a layer thickness dz thinner than the target layer thickness dz_tgt is printed to a state in which a structural layer SL with a layer thickness dz equal to the target layer thickness dz_tgt is printed. Therefore, the height of the three-dimensional structure ST to be finally printed will be the same as the height of a three-dimensional structure ST printed without printing a structural layer SL thinner than the target layer thickness dz_tgt.Although detailed description will be omitted to avoid repetition, even when a structure layer SL thicker than the target layer thickness dz_tgt is formed, the nozzle distance D becomes shorter than the original target distance (specifically, the distance D#31 corresponding to the high-throughput printing mode). However, as the printing mode is switched, the nozzle distance D gradually converges to the original target value, the distance D#31. Therefore, unlike the examples shown in Figures 16(a) to 16(h), deterioration in the printing accuracy of the three-dimensional structure ST is prevented. Therefore, the printing system SYS can achieve both improved printing accuracy of the three-dimensional structure ST and improved throughput.

[0208] As described above with reference to FIGS. 17( a) to 17(d), the layer thickness dz of the structure layer SL formed in the high-throughput forming mode may vary significantly within the structure layer SL. In this case, when a forming operation including a forming mode switching operation is performed, it is determined in step S17 of FIG. 21 that the distance difference exceeds the determination threshold when the variation in the layer thickness dz of the structure layer SL formed in the high-throughput forming mode exceeds a certain amount. Therefore, the forming apparatus 1 subsequently forms the structure layer SL in the self-aligned forming mode. For example, as shown in FIG. 24(a), an example will be described in which it is determined in step S17 of FIG. 21 that the distance difference exceeds the determination threshold when the structure layer SL#4 is formed in the high-throughput forming mode. In this case, as described with reference to FIGS. 14( a) to 14(d), the variation in the layer thickness dz of another structural layer SL formed on one structural layer SL is smaller than the variation in the layer thickness dz of the one structural layer SL. Therefore, as shown in FIG. 24(b), the variation in the layer thickness dz of the structural layers SL (structural layers SL#5 to SL#8 in the example shown in FIG. 24(b)) formed in the self-aligned forming mode gradually decreases. Ultimately, the variation in the layer thickness dz of the structural layers SL, which increased in the high-throughput forming mode, is eliminated in the self-aligned forming mode. This prevents a deterioration in the forming accuracy of the three-dimensional structure ST. Therefore, the forming system SYS can achieve both improved forming accuracy of the three-dimensional structure ST and improved throughput.

[0209] (4) Modifications (4-1) First Modification In the above description, when the machining path information TPI includes an instruction to move the modeling head 121 along the Z-axis direction relative to the stage 131 by an amount corresponding to a predetermined layer thickness each time the structural layer SL is modeled, the control device 2 modifies the machining path information TPI in accordance with the switching of the modeling mode (i.e., the change in the target layer thickness dz_tgt). On the other hand, in the first modification, the control device 2 may switch the modeling mode without modifying the machining path information TPI. In this case, the control device 2 does not need to modify the machining path information TPI, and therefore the processing load on the control device 2 is reduced.

[0210] (4-1-1) First Example of Processing Path Information TPI in the First Modification As shown in FIG. 25 , which illustrates a first example of the processing path information TPI in the first modification, the processing path information TPI may include a plurality of pieces of intra-layer pass information LPI, each of which includes an instruction to move the shaping head 121 by a unit movement amount along the Z-axis relative to the stage 131 each time a structural layer SL is formed. In this case, the processing path information TPI may be considered to have a plurality of pieces of intra-layer pass information LPI for each unit movement amount. As the unit movement amount, a movement amount corresponding to the layer thickness dz of the structural layer SL to be formed in the self-aligned printing mode is used. As an example, if the unit movement amount is 0.1 mm, the processing path information TPI may include a plurality of pieces of intra-layer pass information LPI, each of which includes an instruction to move the shaping head 121 by 0.1 mm along the Z-axis relative to the stage 131 each time a structural layer SL is formed.

[0211] The unit movement amount substantially indicates the target layer thickness dz_tgt of the structural layer SL. For this reason, the processing pass information TPI including a plurality of intra-layer pass information LPI including an instruction to move the modeling head 121 by the unit movement amount along the Z-axis direction relative to the stage 131 each time a structural layer SL is modeled may be considered equivalent to the processing pass information TPI including a plurality of intra-layer pass information LPI each used to model a plurality of structural layers SL whose layer thicknesses dz correspond to the unit movement amount.

[0212] 25 shows the processing path information TPI, which includes an instruction to move the modeling head 121 by a unit movement amount along the Z-axis direction relative to the stage 131 each time a structural layer SL is formed, and which includes K pieces of intra-layer pass information LPI (specifically, intra-layer pass information LPI#1 to LPI#K) each used to form K structural layers SL (note that K is a constant indicating an integer (natural number) greater than or equal to 2). In this case, the intra-layer pass information LPI#1 includes information for controlling the modeling apparatus 1 to form the first structural layer SL#1, whose layer thickness dz corresponds to the unit movement amount. The intra-layer pass information LPI#2 includes information for controlling the modeling apparatus 1 to move the modeling head 121 by the unit movement amount along the Z-axis direction relative to the stage 131 after the structural layer SL#1 is formed, and then form the second structural layer SL#2, whose layer thickness dz corresponds to the unit movement amount, on the structural layer SL#1. Therefore, the Z position specified by the intra-layer pass information LPI#2 (i.e., the Z position of the target irradiation area EA, essentially the Z position of the modeling head 121) is the position obtained by adding the unit movement amount to the Z position specified by the intra-layer pass information LPI#2. The intra-layer pass information LPI#3 to LPI#K are also similar to the intra-layer pass information LPI#2. That is, the intra-layer pass information LPI#k (note that k is a variable indicating an integer greater than or equal to 2 and less than or equal to K) includes information for controlling the modeling apparatus 1 so that, after the structural layer SL#k-1 is formed, the modeling head 121 is moved by the unit movement amount along the Z axis relative to the stage 131, and then the kth structural layer SL#k, whose layer thickness dz corresponds to the unit movement amount, is modeled on the structural layer SL#k-1. Therefore, the Z position specified by the intra-layer pass information LPI#k is the position obtained by adding the unit movement amount to the Z position specified by the intra-layer pass information LPI#k-1. In other words, the Z position specified by the intralayer path information LPI#k is the position obtained by adding "unit movement amount x (k-1)" to the Z position specified by the intralayer path information LPI#1.

[0213] In this case, the control device 2 may switch the modeling mode of the modeling apparatus 1 by changing the rule for reading out the intra-layer pass information LPI from the machining pass information TPI.

[0214] Specifically, when the high-throughput printing mode is selected as the printing mode of the printing apparatus 1, the control device 2 may set the rule for reading the intra-layer pass information LPI to a first rule that reads multiple pieces of intra-layer pass information LPI for each M (where M is a constant indicating a natural number) layers. Specifically, the control device 2 may set the rule for reading the intra-layer pass information LPI to a first rule that reads one piece of intra-layer pass information LPI for each M pieces of intra-layer pass information LPI from the machining pass information TPI. For example, when the constant M is set to 4, the control device 2 may set the rule for reading the intra-layer pass information LPI to a first rule that reads one piece of intra-layer pass information LPI for each four pieces of intra-layer pass information LPI (in the example shown in FIG. 25 , the intra-layer pass information LPI surrounded by a thick solid line) from the machining pass information TPI.

[0215] In this case, the modeling apparatus 1 models a structure layer SL having a layer thickness dz equal to "unit movement amount × constant M." In other words, the first rule is essentially equivalent to a rule that sets the target layer thickness dz_tgt of the structure layer SL to "unit movement amount × constant M." In this case, the constant M may be set so that the target layer thickness dz_tgt, which is "unit movement amount × constant M," becomes the target layer thickness dz_tgt in the high-throughput modeling mode described above (see FIG. 18( a) and the like).

[0216] On the other hand, when the self-aligned printing mode is selected as the printing mode of the printing apparatus 1, the control device 2 may set the rule for reading the intra-layer pass information LPI to a second rule that reads multiple pieces of intra-layer pass information LPI for each N (where N is a natural number smaller than the constant M) layers. Specifically, the control device 2 may set the rule for reading the intra-layer pass information LPI to a second rule that reads one piece of intra-layer pass information LPI for each N pieces of intra-layer pass information LPI from the machining pass information TPI. For example, when the constant N is set to 1, the control device 2 may set the rule for reading the intra-layer pass information LPI to a second rule that reads one piece of intra-layer pass information LPI for each piece of intra-layer pass information LPI from the machining pass information TPI (i.e., reads multiple pieces of intra-layer pass information LPI one by one in sequence).

[0217] In this case, the modeling apparatus 1 models a structural layer SL having a layer thickness dz equal to "unit movement amount × constant N." In other words, the second rule is essentially equivalent to a rule that sets the target layer thickness dz_tgt of the structural layer SL to "unit movement amount × constant N." In this case, the target layer thickness dz_tgt, which is "unit movement amount × constant N," becomes the target layer thickness dz_tgt in the self-aligned modeling mode described above (see FIG. 18( a) and the like). As a specific example, a modeling operation will be described in which the unit movement amount is set to 0.1 mm, the constant M is set to 4, the constant N is set to 1, and the processing path information TPI includes K pieces of intra-layer path information LPI related to the K structural layers SL shown in FIG. 25 . For ease of explanation, the K structural layers SL that are respectively formed using the K pieces of intra-layer pass information LPI will be referred to as the K unit structural layers SLu#1 to SLu#K to distinguish them from the structural layers SL that are actually formed by the forming operation. In this case, the control device 2 selects the high-throughput forming mode as the default forming mode of the forming apparatus 1, and therefore reads out one piece of intra-layer pass information LPI for every four pieces of intra-layer pass information LPI. For example, to form the first structural layer SL, the control device 2 reads out the intra-layer pass information LPI#1 related to the first unit structural layer SLu#1. Then, the control device 2 controls the forming apparatus 1 to form the structural layer SL#1 based on the intra-layer pass information LPI#1.

[0218] Then, in order to print the second structure layer SL#2 on the structure layer SL#1, the control device 2 reads out the intra-layer pass information LPI#5, which is four layers (i.e., M layers) above the intra-layer pass information LPI#1. That is, the control device 2 reads out the intra-layer pass information LPI#5 for the unit structure layer SLu#5, which is four layers (i.e., M layers) above the unit structure layer SLu#1. Then, the control device 2 moves the modeling head 121 along the Z-axis direction relative to the stage 131 based on the intra-layer pass information LPI#5. Here, as described above, the Z position specified by the intra-layer pass information LPI#k is the position obtained by adding "unit movement amount x (k-1)" to the Z position specified by the intra-layer pass information LPI#1. Therefore, the Z position specified by the intralayer pass information LPI#5 is the value obtained by adding "0.1 mm (i.e., unit movement amount) × 4 = 0.4 mm" to the Z position specified by the intralayer pass information LPI#1. Therefore, based on the intralayer pass information LPI#5, the control device 2 moves the modeling head 121 by 0.4 mm along the Z-axis direction relative to the stage 131. Thereafter, based on the intralayer pass information LPI#5, the control device 2 controls the modeling device 1 to model the structural layer SL#3.

[0219] Then, in order to print the third structure layer SL#3 on the structure layer SL#2, the control device 2 reads out the intra-layer pass information LPI#9, which is four layers (i.e., M layers) above the intra-layer pass information LPI#5. That is, the control device 2 reads out the intra-layer pass information LPI#9 for the unit structure layer SLu#9, which is four layers (i.e., M layers) above the unit structure layer SLu#5. Then, based on the intra-layer pass information LPI#9, the control device 2 moves the modeling head 121 along the Z-axis direction relative to the stage 131. Here, the Z position specified by the intra-layer pass information LPI#9 is the value obtained by adding "0.1 mm (i.e., unit movement amount) × 9 = 0.9 mm" to the Z position specified by the intra-layer pass information LPI#1. Therefore, the Z position specified by the intra-layer pass information LPI#9 is the value obtained by adding "0.4 mm" to the Z position specified by the intra-layer pass information LPI#5. Therefore, based on the intra-layer pass information LPI#9, the control device 2 moves the model-forming head 121 by 0.4 mm along the Z-axis direction relative to the stage 131. Thereafter, based on the intra-layer pass information LPI#9, the control device 2 controls the model-forming device 1 to model the structural layer SL#3.

[0220] Here, an example will be described in which, after the structural layer SL#3 has been formed, it is determined in step S17 of FIG. 21 that the distance difference exceeds the determination threshold. That is, an example will be described in which, after the structural layer SL#3 has been formed based on the intra-layer pass information LPI#9 related to the ninth unit structural layer SLu#5, it is determined in step S17 of FIG. 21 that the distance difference exceeds the determination threshold. In this case, the control device 2 selects the self-aligned forming mode as the forming mode of the forming apparatus 1 (step S18 of FIG. 21). Therefore, the forming apparatus 1 forms the fourth structural layer SL#4 on the structural layer SL#3 in the self-aligned forming mode. To form the structural layer SL#4, the control device 2 reads out the intra-layer pass information LPI#10, which is one layer (i.e., the Nth layer) above the intra-layer pass information LPI#9. That is, the control device 2 reads out the intra-layer pass information LPI#10 for the unit structure layer SLu#10, which is one layer (i.e., the Nth layer) above the unit structure layer SLu#9. Then, the control device 2 moves the modeling head 121 along the Z-axis direction relative to the stage 131 based on the intra-layer pass information LPI#10. Here, the Z position specified by the intra-layer pass information LPI#10 is the Z position specified by the intra-layer pass information LPI#9 plus 0.1 mm (i.e., unit movement amount) × 9 = 0.9 mm. Therefore, based on the intra-layer pass information LPI#9, the control device 2 moves the modeling head 121 along the Z-axis direction relative to the stage 131 by 0.1 mm. Then, based on the intra-layer pass information LPI#10, the control device 2 controls the modeling device 1 to model the structure layer SLu#4.

[0221] Then, in order to print the fifth structure layer SL#5 on the structure layer SL#4, the control device 2 reads the intra-layer pass information LPI#10, which is one layer (i.e., the Nth layer) above the intra-layer pass information LPI#10. That is, the control device 2 reads the intra-layer pass information LPI#11 for the unit structure layer SLu#11, which is one layer (i.e., the Nth layer) above the unit structure layer SLu#10. Then, based on the intra-layer pass information LPI#11, the control device 2 moves the modeling head 121 along the Z-axis direction relative to the stage 131. Here, the Z position specified by the intra-layer pass information LPI#11 is a value obtained by adding 0.1 mm (i.e., the unit movement amount) to the Z position specified by the intra-layer pass information LPI#10. Therefore, based on the intra-layer pass information LPI#11, the control device 2 moves the modeling head 121 along the Z-axis direction relative to the stage 131 by 0.1 mm. Thereafter, the control device 2 controls the modeling device 1 to model the structural layer SL#5 based on the intra-layer path information LPI#11.

[0222] Here, an example will be described in which, after the structural layer SL#5 has been formed, it is determined in step S17 of FIG. 21 that the distance difference is below the determination threshold. That is, an example will be described in which, after the structural layer SL#5 has been formed based on the intra-layer pass information LPI#11 related to the 11th unit structural layer SLu#11, it is determined in step S17 of FIG. 21 that the distance difference is below the determination threshold. In this case, the control device 2 selects the high-throughput printing mode as the printing mode of the printing apparatus 1 (step S11 of FIG. 21). Therefore, the printing apparatus 1 prints the sixth structural layer SL#6 on the structural layer SL#5 in the high-throughput printing mode. To print the structural layer SL#6, the control device 2 reads out intra-layer pass information LPI#15, which is four layers (i.e., M layers) above the intra-layer pass information LPI#11. That is, the control device 2 reads out the intra-layer pass information LPI#15 for the unit structure layer SLu#15, which is four layers (i.e., M layers) above the unit structure layer SLu#11. Then, the control device 2 moves the modeling head 121 along the Z-axis direction relative to the stage 131 based on the intra-layer pass information LPI#15. As described above, the Z position specified by the intra-layer pass information LPI#15 is calculated by adding 0.1 mm (i.e., unit movement amount) × 4 = 0.4 mm to the Z position specified by the intra-layer pass information LPI#11. Therefore, the control device 2 moves the modeling head 121 by 0.4 mm along the Z-axis direction relative to the stage 131 based on the intra-layer pass information LPI#11. Then, the control device 2 controls the modeling device 1 to model the structure layer SLu#6 based on the intra-layer pass information LPI#5.

[0223] Thereafter, the same operation is repeated.

[0224] (4-1-2) Second example of processing path information TPI in the first modified example As shown in Figure 26, which shows a first example of processing path information TPI in the first modified example, processing path information TPI may include at least one intra-layer pass information LPI for forming at least one structural layer SL in a self-aligned forming mode and at least one intra-layer pass information LPI for forming at least one structural layer SL in a high-throughput forming mode.

[0225] In the self-aligned printing mode, the target layer thickness dz_tgt is set to a relatively thin layer thickness. Therefore, in the self-aligned printing mode, the movement amount of the printing head 121 that moves relative to the stage 131 each time the structural layer SL is printed (i.e., the movement amount equivalent to the target layer thickness dz_tgt) is set to a relatively small movement amount. On the other hand, in the high-throughput printing mode, the target layer thickness dz_tgt is set to a relatively thick layer thickness. Therefore, in the self-aligned printing mode, the movement amount of the printing head 121 that moves relative to the stage 131 each time the structural layer SL is printed (i.e., the movement amount equivalent to the target layer thickness dz_tgt) is set to a relatively large movement amount. For this reason, at least one intra-layer pass information LPI for printing at least one structural layer SL in the self-aligned printing mode may be intra-layer pass information LPI in which the movement amount of the printing head 121 relative to the stage 131 each time a structural layer SL is printed is set to a relatively small movement amount (specifically, the movement amount in the self-aligned printing mode). At least one intra-layer pass information LPI for printing at least one structural layer SL in the high-throughput printing mode may be intra-layer pass information LPI in which the movement amount of the printing head 121 relative to the stage 131 each time a structural layer SL is printed is set to a relatively large movement amount (specifically, the movement amount in the high-throughput printing mode). In the example shown in Figure 26, at least one intra-layer pass information LPI for forming at least one structural layer SL in the self-aligned forming mode is intra-layer pass information LPI in which the movement amount of the forming head 121 that moves relative to the stage 131 each time a structural layer SL is formed is set to 0.1 mm, and at least one intra-layer pass information LPI for forming at least one structural layer SL in the high-throughput forming mode is intra-layer pass information LPI in which the movement amount of the forming head 121 that moves relative to the stage 131 each time a structural layer SL is formed is set to 0.4 mm.

[0226] In particular, within the processing pass information TPI, at least one piece of intra-layer pass information LPI for printing at least one structural layer SL in the self-aligned printing mode and at least one piece of intra-layer pass information LPI for printing at least one structural layer SL in the high-throughput printing mode may be arranged alternately. In the example shown in Fig. 26, within the processing pass information TPI, four pieces of intra-layer pass information LPI for printing four structural layers SL in the self-aligned printing mode and four pieces of intra-layer pass information LPI for printing four structural layers SL in the high-throughput printing mode are arranged alternately. Specifically, in the example shown in Figure 26, the processing path information TPI includes four pieces of intra-layer path information LPI#1 to LPI#4 for forming four structural layers SL#1 to SL#4 in high-throughput printing mode, four pieces of intra-layer path information LPI#5 to LPI#8 for forming four structural layers SL#5 to SL#8 in self-aligned printing mode, and four pieces of intra-layer path information LPI#9 to LPI#12 for forming four structural layers SL#9 to SL#12 in high-throughput printing mode (however, intra-layer path information LPI#10 to LPI#12 are not shown).

[0227] In this case, the modeling apparatus 1 may alternately repeat an operation of forming at least one structure layer SL in the high-throughput modeling mode and an operation of forming at least one structure layer SL in the self-aligned modeling mode. For example, when the processing path information TPI shown in FIG. 26 is used, the modeling apparatus 1 may form four structure layers SL#1 to SL#4 in the high-throughput modeling mode. Thereafter, the modeling apparatus 1 may form four structure layers SL#5 to SL#8 on the structure layer SL#4 in the self-aligned modeling mode. Thereafter, the modeling apparatus 1 may form four structure layers SL#9 to SL#12 on the structure layer SL#8 in the high-throughput modeling mode.

[0228] Even in this case, the above-described effects can be achieved because the modeling mode of the modeling apparatus 1 can be switched at an appropriate timing. Furthermore, because the modeling mode of the modeling apparatus 1 is essentially switched based on the processing path information TPI, the control device 2 does not need to actively switch the modeling mode of the modeling apparatus 1. Specifically, the control device 2 does not need to calculate the nozzle distance D (step S15 in FIG. 21 ), nor does it need to determine whether the distance difference between the nozzle distance D and the target value satisfies the distance condition (step S17 in FIG. 21 ). In this case, the imaging device 17 does not need to capture an image of the modeling surface MS, and the modeling apparatus 1 does not need to be equipped with the imaging device 17.

[0229] (4-2) Second Modification As already explained, the control device 2 may control the size of the molten pool MP so that the size of the molten pool MP becomes a predetermined target size. In the second modification, as shown in the flowchart of Fig. 27 which shows the flow of the molding operation in the second modification (particularly, the molding operation including the molding mode switching operation), the control device 2 may change the target value (target size) of the size of the molten pool MP in accordance with the switching of the molding mode of the molding apparatus 1.

[0230] 27 , when the high-throughput manufacturing mode is selected as the manufacturing mode of the manufacturing apparatus 1 in step S11, the control device 2 may set the target size of the molten pool MP to a first size. On the other hand, when the self-aligned manufacturing mode is selected as the manufacturing mode of the manufacturing apparatus 1 in step S18, the control device 2 may set the target size of the molten pool MP to a second size different from the first size.

[0231] The first size may be larger than the second size. In this case, the size of the molten pool MP formed in the high-throughput modeling mode is larger than the size of the molten pool MP formed in the self-aligned modeling mode. This increases the amount of modeling material M melted in the molten pool MP, resulting in a thicker layer thickness dz of the structure layer SL. This further improves the throughput of the modeling apparatus 1.

[0232] When the self-aligned manufacturing mode is selected as the manufacturing mode of the manufacturing apparatus 1, the control device 2 may set the target size of the molten pool MP to a relatively large first size. In this case, the throughput in the self-aligned manufacturing mode is improved.

[0233] In addition to or instead of changing the target size of the molten pool MP, the control device 2 may change the amount of the building material M to be supplied to the molten pool MP (i.e., the material input amount SM) in accordance with switching of the building mode of the building apparatus 1. For example, when the high-throughput building mode is selected as the building mode of the building apparatus 1, the control device 2 may set the material input amount SM to a first input amount. On the other hand, when the self-aligned building mode is selected as the building mode of the building apparatus 1, the control device 2 may set the material input amount SM to a second input amount different from the first input amount.

[0234] The control device 2 may change the material input amount SM by controlling the material supply source 11. For example, the control device 2 may change the material input amount SM by controlling the material supply source 11 to change the amount of the building material M supplied from the material supply source 11 to the material nozzle 1212. Alternatively, in addition to or instead of controlling the material supply source 11, the control device 2 may change the material input amount SM by changing the positional relationship within the building surface MS between the target supply area (material supply area) MA to which the material nozzle 1212 supplies the building material M on the plane on which the molten pool MP is located (i.e., the building surface MS). For example, the control device 2 may increase the material input amount SM by moving the target supply area MA closer to the center of the molten pool MP. The control device 2 may decrease the material input amount SM by moving the target supply area MA away from the center of the molten pool MP. In this case, the molding device 1 is equipped with a nozzle drive system that moves the material nozzle 1212 independently of the irradiation optical system 1211, and the control device 2 may change the positional relationship between the target supply area MA and the molten pool MP by controlling the nozzle drive system.

[0235] The first input amount may be greater than the second input amount. In this case, the amount of the building material M input to the molten pool MP in the high-throughput building mode is greater than the amount of the building material M input to the molten pool MP in the self-aligned building mode. This increases the amount of the building material M melted in the molten pool MP, resulting in a thicker layer thickness dz of the structure layer SL. This further improves the throughput of the building apparatus 1.

[0236] When the self-aligned modeling mode is selected as the modeling mode of the modeling apparatus 1, the control device 2 may set the material input amount SM to the first input amount, which is relatively large. In this case, the throughput in the self-aligned modeling mode is improved.

[0237] (4-3) Third Modification In the above description, the control device 2 calculates the nozzle distance D based on the molten pool image IMG generated by the imaging device 17 capturing an image of the molten pool MP. However, the imaging device 17 may capture an image of the build surface MS without capturing an image of the molten pool MP. Even in this case, the build surface MS is reflected in the image generated by the imaging device 17. Therefore, the control device 2 may calculate the position of the build surface MS based on the image generated by the imaging device 17, and then calculate the distance between the material nozzle 1212 and the build surface MS (i.e., the nozzle distance D) based on the calculated position of the build surface MS. In this case, since the imaging device 17 does not need to image the molten pool MP, in addition to or instead of imaging the building surface MS while the molding apparatus 1 is building the structure layer SL, the imaging device 17 may image the building surface MS before the molding apparatus 1 starts building the structure layer SL, or may image the building surface MS after the molding apparatus 1 has finished building the structure layer SL. Note that the imaging device 17 may also measure the temperature or temperature distribution of the molten pool MP.

[0238] Alternatively, the modeling apparatus 1 may include a position measurement device capable of measuring the position of the modeling surface MS in addition to or instead of the imaging device 17. Examples of the position measurement device include at least one of a stereo camera, a 3D scanner, a TOF (Time Of Flight) sensor, and an interferometer. In this case, the control device 2 may calculate the distance between the material nozzle 1212 and the modeling surface MS (i.e., the nozzle distance D) based on the measurement results of the position measurement device. In this case, the position measurement device may be considered to function as a distance information acquisition device capable of acquiring distance information related to the nozzle distance D. Furthermore, in this case, since the imaging device 17 does not need to capture an image of the molten pool MP, the position measurement device may measure the position of the modeling surface MS while the modeling apparatus 1 is modeling the structure layer SL, may measure the position of the modeling surface MS before the modeling apparatus 1 starts modeling the structure layer SL, or may measure the position of the modeling surface MS after the modeling apparatus 1 has finished modeling the structure layer SL. In addition, when the modeling apparatus 1 is equipped with a position measurement device, the modeling apparatus 1 does not need to be equipped with the imaging device 17.

[0239] (4-4) Fourth Modification In the above description, the control device 2 switches the modeling mode based on the distance difference, which is the difference between the nozzle distance D and its target value. In this case, in the above description, when the distance difference exceeds the judgment threshold, the control device 2 sets the target layer thickness dz_tgt (effectively, the movement amount of the modeling head 121 that moves in the Z-axis direction relative to the stage 131 each time the structure layer SL is formed) to the first layer thickness. When the distance difference is below the judgment threshold, the control device 2 sets the target layer thickness dz_tgt to the second layer thickness. In other words, the control device 2 sets the target layer thickness dz_tgt to one of two types of layer thickness. In the fourth modification, the control device 2 may set the target layer thickness dz_tgt to one of three or more types of layer thickness based on the value of the distance difference. For example, when the distance difference is below the first judgment threshold, the control device 2 may set the target layer thickness dz_tgt to the first layer thickness. For example, when the distance difference exceeds the first determination threshold and is less than a second determination threshold that is greater than the first determination threshold, the control device 2 may set the target layer thickness dz_tgt to a second layer thickness that is thinner than the first layer thickness. For example, when the distance difference exceeds the second determination threshold, the control device 2 may set the target layer thickness dz_tgt to a third layer thickness that is thinner than the second layer thickness.

[0240] (4-5) Other Modifications In the above description, the modeling system SYS melts the modeling material M by irradiating the modeling light EL onto the modeling material M. However, the modeling system SYS may melt the modeling material M by irradiating the modeling material M with an arbitrary energy beam. In this case, the modeling system SYS may include a beam irradiation device capable of irradiating the arbitrary energy beam in addition to or instead of the irradiation optical system 1211. Examples of the arbitrary energy beam include at least one of a charged particle beam and an electromagnetic wave. Examples of the charged particle beam include at least one of an electron beam and an ion beam.

[0241] In the above description, the modeling system SYS performs additive processing using the laser build-up welding method. However, the modeling system SYS may also form the three-dimensional structure ST from the modeling material M using any other method that can form the three-dimensional structure ST by irradiating the modeling material M with modeling light EL (or any energy beam). Alternatively, the modeling system SYS may form the three-dimensional structure ST using any other method for additive processing that is different from the method of irradiating the modeling material M with modeling light EL (or any energy beam).

[0242] The above-described modeling unit 12 (particularly, the modeling head 121) may be attached to a robot (typically, an articulated robot). When the modeling head 121 is moved by a robot, the head drive system 122 may be a robot. For example, the modeling unit 12 (particularly, the modeling head 121) may be attached to a welding robot for welding. For example, the modeling unit 12 (particularly, the modeling head 121) may be attached to a self-propelled mobile robot. The self-propelled mobile robot may include, for example, a self-propelled device such as an AGV (Automatic Guided Vehicle) or an AMR (Autonomous Mobile Robot) and a robot arm provided on the self-propelled device.

[0243] (5) Supplementary Notes The following supplementary notes are further disclosed in relation to the above-described embodiment.

[0244] [Appendix A1] A modeling device that forms a model by sequentially stacking a plurality of structural layers on a mounting surface, and a control device that controls the modeling device, wherein the modeling device comprises: an irradiation optical system that irradiates a modeling beam; a material supply member that supplies a modeling material to a molten pool formed by irradiation of the modeling beam; a distance information acquisition device that acquires distance information regarding the distance between the structural layer formed by irradiation of the modeling beam from the irradiation optical system and supply of the modeling material from the material supply member and the material supply member; and a movement device that moves at least one of the irradiation optical system, the material supply member, and the structural layer, and the control device controls the modeling device to perform a modeling operation of irradiating the modeling beam and supplying the modeling material to form a structural layer along an extension direction while moving at least one of the irradiation optical system, the material supply member, and the structural layer using the movement device, a modeling system that controls the modeling device using distance information from the distance information acquisition device to change an increase in height of a modeled object when modeling one structure layer by the modeling operation from a first increase to a second increase that is smaller than the first increase.

[0245] [Appendix A2] A manufacturing apparatus comprising: a manufacturing device that sequentially manufactures a plurality of structural layers on a mounting surface; and a control circuit that controls the manufacturing device, wherein the manufacturing device comprises: an irradiation optical system that irradiates a manufacturing beam; a material supply member that supplies a manufacturing material to a molten pool formed by the irradiation of the manufacturing beam; and a distance information acquisition device that acquires distance information regarding the distance between the structural layer manufactured by the irradiation of the manufacturing beam from the irradiation optical system and the supply of the manufacturing material from the material supply member and the material supply member, wherein the control circuit is capable of switching between setting a target distance between the structural layer and the material supply member to H1 or to H2 that is smaller than H1 based on the distance information, and a manufacturing height Z1 manufactured when the target distance is set to H2 and the actual distance is H1 is greater than a manufacturing height Z2 manufactured when the target distance is set to H2 and the actual distance is H2, A molding system in which ΔB1 of a printing height Z1+ΔB1 that is formed when the target distance is set to H1 and the actual distance is higher than H1 by ΔA1 is smaller than ΔB2 of a printing height Z2+ΔB2 that is formed when the target distance is set to H2 and the actual distance is higher than H2 by ΔA1, and ΔC1 of a printing height Z1-ΔC1 that is formed when the target distance is set to H1 and the actual distance is shorter than H1 by ΔA2 is smaller than ΔC2 of a printing height Z2-ΔC2 that is formed when the target distance is set to H2 and the actual distance is shorter than H2 by ΔA2.

[0246] [Supplementary Note A3] The modeling system according to Supplementary Note A1 or A2, wherein the height increase amount is a thickness of the one structure layer modeled by the modeling operation.

[0247] [Supplementary Note A4] The modeling system according to Supplementary Note A1 or A2, wherein the height increase amount is a target value of a thickness of the one structure layer to be modeled by the modeling operation.

[0248] [Appendix A5] The shaping system according to any one of Appendices A1 to A4, further comprising: a moving device that moves at least one of the material supplying member and the placement surface so as to change the distance.

[0249] [Appendix A6] The shaping system according to Appendix A5, wherein the control device controls the moving device to change the distance when changing the height increase amount.

[0250] [Appendix A7] The molding system according to Appendix A5 or A6, wherein the material supply member supplies the molding material toward the molten pool from a direction oblique to a direction in which the distance between the structure layer and the material supply member is changed.

[0251] [Appendix A8] The manufacturing system according to any one of Appendices A5 to A7, wherein the amount of the manufacturing material supplied to the molten pool per unit time changes when the distance is changed.

[0252] [Appendix A9] The manufacturing system according to any one of Appendices A5 to A8, wherein an amount of the manufacturing material introduced into the molten pool per unit time increases as the distance increases.

[0253] [Appendix A10] The shaping system according to any one of Appendices A5 to A9, wherein the moving device moves an optical member that emits the shaping beam and the material supply member in the irradiation optical system.

[0254] [Appendix A11] When changing the height increase amount, the control device changes the positional relationship between the material supply area, which is the area where the building material is supplied in the plane in which the molten pool is located, and the molten pool in the plane, thereby changing the amount of building material fed into the molten pool per unit time. This is a manufacturing system described in any one of Appendices A1 to A10.

[0255] [Appendix A12] The shaping system described in any one of Appendices A1 to A11, wherein the control device controls the shaping device so as to switch from a shaping operation in which the height increase amount is the first increase amount to a shaping operation in which the height increase amount is the second increase amount when a distance difference regarding the difference between the distance and a target value exceeds a predetermined threshold.

[0256] [Supplementary Note A13] The object-forming system described in Supplementary Note A12, wherein the control device controls the object-forming device to perform the object-forming operation with the first increment when the distance difference is less than the predetermined threshold after the object-forming operation with the second increment is performed.

[0257] [Supplementary Note A14] The modeling system described in Supplementary Note A12 or A13, wherein, when the distance difference is below the predetermined threshold after a modeling operation in which a height increase amount is the first increase amount is performed, the control device controls the modeling device to continue the modeling operation in which the height increase amount is the first increase amount.

[0258] [Appendix A15] The shaping system described in any one of Appendices A12 to A14, wherein, when the distance difference exceeds the predetermined threshold after the shaping operation in which the height increase amount is the second increase amount is performed, the control device controls the shaping device to continue the shaping operation in which the height increase amount is the second increase amount.

[0259] [Appendix A16] The shaping system according to any one of Appendices A1 to A15, wherein the distance over which the height increase amount is the first increase amount is longer than the distance over which the height increase amount is the second increase amount.

[0260] [Appendix A17] A manufacturing system described in any one of Appendices A1 to A16, wherein the first range of distance in which the height increase amount is the first increase amount is located in a range shorter than the distance range in which the amount of manufacturing material input into the molten pool does not change when the distance increases.

[0261] [Appendix A18] The shaping system according to Appendix A17, wherein the second range of distances in which the height increase amount is the second increase amount is located in a range of distances shorter than the first range.

[0262] [Appendix A19] A manufacturing system described in Appendix A17 or A18, wherein the first range is located in a distance range greater than half the distance at which the amount of the manufacturing material injected into the molten pool does not change when the distance increases.

[0263] [Appendix A20] A manufacturing system described in any one of Appendices A17 to A18, wherein the second range is located in a distance range smaller than half the distance at which the amount of the manufacturing material injected into the molten pool does not change when the distance increases.

[0264] [Appendix A21] The molding system according to any one of Appendices A1 to A20, wherein the distance information acquisition device includes an imaging device capable of capturing an image of the molten pool to generate a molten pool image.

[0265] [Appendix A22] The molding system according to Appendix A21, wherein the imaging device images the molten pool from a direction different from the direction in which the distance is changed.

[0266] [Appendix A23] The molding system according to Appendix A22, wherein the control device controls the molding device to change the distance based on a positional deviation of the molten pool image captured by the imaging device.

[0267] [Appendix A24] The control device controls the molding device so that the size of the molten pool becomes a target size based on the size of the molten pool image captured by the imaging device. This is the molding system described in any one of Appendices A21 to A23.

[0268] [Appendix A25] The modeling system according to Appendix A24, wherein the target size is set depending on the distance between the structure layer and the material supply member.

[0269] [Supplementary Note A26] The shaping system according to Supplementary Note A24 or A25, wherein the target size in the shaping operation in which the height increase amount is the first increase amount is different from the target size in the shaping operation in which the height increase amount is the second increase amount.

[0270] [Supplementary Note A27] The shaping system according to Supplementary Note A26, wherein the target size in a shaping operation in which the height increase amount is the first increase amount is larger than the target size in a shaping operation in which the height increase amount is the second increase amount.

[0271] [Appendix A28] A control device that controls a modeling device that forms a model by sequentially stacking a plurality of structural layers on a mounting surface, the modeling device comprising: an irradiation optical system that irradiates a modeling beam; a material supply member that supplies a modeling material to a molten pool formed by irradiation of the modeling beam; a distance information acquisition device that acquires distance information regarding the distance between the structural layer formed by irradiation of the modeling beam from the irradiation optical system and supply of the modeling material from the material supply member and the material supply member; and a movement device that moves at least one of the irradiation optical system, the material supply member, and the structural layer, and the control device controls the modeling device to perform a modeling operation of irradiating the modeling beam and supplying the modeling material to form a structural layer along an extension direction while moving at least one of the irradiation optical system, the material supply member, and the structural layer using the movement device; a control device that controls the modeling device by using the distance information obtained by the distance information acquisition device so as to change an increase in height of the modeled object when one structure layer is modeled by the modeling operation from a first increase in height to a second increase in height that is smaller than the first increase in height.

[0272] [Appendix A29] A control circuit for controlling a modeling device that sequentially models a plurality of structural layers on a mounting surface, the modeling device comprising: an irradiation optical system that irradiates a modeling beam; a material supply member that supplies a modeling material to a molten pool formed by irradiation of the modeling beam; and a distance information acquisition device that acquires distance information relating to the distance between the structural layer modeled by irradiation of the modeling beam from the irradiation optical system and supply of the modeling material from the material supply member and the material supply member; the control circuit is capable of switching, based on the distance information, whether to set a target distance between the structural layer and the material supply member to H1 or to H2 that is smaller than H1; and a modeling height Z1 that is modeled when the target distance is set to H2 and the actual distance is H1 is greater than a modeling height Z2 that is modeled when the target distance is set to H2 and the actual distance is H2; A control circuit in which ΔB1 of a build height Z1-ΔB1 to be formed when the target distance is set to H1 and the actual distance is higher than H1 by ΔA1 is smaller than ΔB2 of a build height Z2-ΔB2 to be formed when the target distance is set to H2 and the actual distance is higher than H2 by ΔA1, and ΔC1 of a build height Z1-ΔC1 to be formed when the target distance is set to H1 and the actual distance is shorter than H2 by ΔA2 is smaller than ΔC2 of a build height Z2-ΔC2 to be formed when the target distance is set to H2 and the actual distance is shorter than H2 by ΔA2.

[0273] [Appendix A30] A control method for controlling a modeling device that forms a model by sequentially stacking a plurality of structural layers on a mounting surface, the modeling device comprising: an irradiation optical system that irradiates a modeling beam; a material supply member that supplies a modeling material to a molten pool formed by irradiation of the modeling beam; a distance information acquisition device that acquires distance information regarding the distance between the material supply member and the structural layer formed by irradiation of the modeling beam from the irradiation optical system and supply of the modeling material from the material supply member; and a movement device that moves at least one of the irradiation optical system, the material supply member, and the structural layer; and the control method includes performing a modeling operation of irradiating the modeling beam and supplying the modeling material to form a structural layer along an extension direction while moving at least one of the irradiation optical system, the material supply member, and the structural layer by the movement device; and changing an increase in height of the object when one structure layer is formed by the modeling operation from a first increase in height to a second increase in height that is smaller than the first increase in height, by using the distance information obtained by the distance information acquisition device.

[0274] [Appendix A31] A control method for controlling a modeling device that sequentially models a plurality of structural layers on a mounting surface, the modeling device comprising: an irradiation optical system that irradiates a modeling beam; a material supply member that supplies a modeling material to a molten pool formed by irradiation of the modeling beam; and a distance information acquisition device that acquires distance information regarding the distance between the structural layer modeled by irradiation of the modeling beam from the irradiation optical system and supply of the modeling material from the material supply member and the material supply member, the control method including switching, based on the distance information, whether to set a target distance between the structural layer and the material supply member to H1 or to H2 that is smaller than H1, and a modeling height Z1 that is modeled when the target distance is set to H2 and the actual distance is H1 is greater than a modeling height Z2 that is modeled when the target distance is set to H2 and the actual distance is H2, A control method in which ΔB1 of a build height Z1-ΔB1 formed when the target distance is set to H1 and the actual distance is ΔA1 higher than H1 is smaller than ΔB2 of a build height Z2-ΔB2 formed when the target distance is set to H2 and the actual distance is ΔA1 higher than H2, and ΔC1 of a build height Z1-ΔC1 formed when the target distance is set to H1 and the actual distance is ΔA2 shorter than H2 is smaller than ΔC2 of a build height Z2-ΔC2 formed when the target distance is set to H2 and the actual distance is ΔA2 shorter than H2.

[0275] [Appendix A32] A computer program that causes a computer to execute the control method according to appendix A30 or A31.

[0276] [Supplementary Note A33] A modeling method for modeling a model from the modeling material, using the modeling system according to any one of Supplementary Notes A1 to A27.

[0277] [Appendix B1] A shaping system comprising: a shaping device that sequentially shaping a plurality of structural layers on a mounting surface; and a control device that controls the shaping device, wherein the shaping device comprises: an irradiation optical system that irradiates a shaping beam; a material supply member that supplies shaping material to a molten pool formed by irradiating the shaping beam; and a distance information acquisition device that acquires distance information regarding the distance between the material supply member and the structural layer formed by irradiating the shaping beam from the irradiation optical system and supplying the shaping material from the material supply member, and the control device controls the shaping device to select, using the distance information from the distance information acquisition device, a first shaping operation that shaping the structural layer formed by the shaping operation by the shaping device so that the layer thickness of the structural layer formed by the shaping operation by the shaping device is a first thickness, or a second shaping operation that shaping the structural layer formed by the shaping operation by the shaping device so that the layer thickness is a second thickness thinner than the first thickness.

[0278] [Supplementary Note B2] The shaping system according to Supplementary Note B1, wherein the control device selects the second shaping operation when the distance with respect to a target value increases.

[0279] [Supplementary Note B3] The modeling system according to Supplementary Note B1 or B2, wherein the control device does not switch between the first modeling operation and the second modeling operation during a period in which the one structure layer is being modeled.

[0280] [Appendix B4] The shaping system according to any one of Appendices B1 to B3, further comprising: a moving device that moves at least one of the material supplying member and the placement surface so as to change the distance.

[0281] [Supplementary Note B5] The shaping system according to Supplementary Note B4, wherein the control device controls the movement device to change the distance when changing the layer thickness.

[0282] [Appendix B6] The molding system according to Appendix B4 or B5, wherein the material supply member supplies the molding material toward the molten pool from a direction oblique to a direction in which the distance between the structure layer and the material supply member is changed.

[0283] [Appendix B7] The manufacturing system according to any one of Appendices B4 to B6, wherein the amount of the manufacturing material supplied to the molten pool per unit time changes when the distance is changed.

[0284] [Appendix B8] An embodied molding system according to any one of appendices B4 to B7, wherein an increase in the distance increases the amount of embodied material per unit time that is fed into the molten pool.

[0285] [Appendix B9] The shaping system according to any one of Appendices B4 to B8, wherein the moving device moves an optical member of the irradiation optical system that emits the shaping beam and the material supply member.

[0286] [Appendix B10] When changing the layer thickness, the control device changes the positional relationship between the material supply area, which is the area where the building material is supplied in the plane where the molten pool is located, and the molten pool in the plane, thereby changing the amount of building material fed into the molten pool per unit time. This is a manufacturing system described in any one of Appendices B1 to B9.

[0287] [Appendix B11] The object-forming system described in any one of Appendices D1 to D1, wherein the control device controls the object-forming device to switch from the first object-forming operation to the second object-forming operation when a distance difference regarding a difference between the distance and a target value exceeds a predetermined threshold.

[0288] [Supplementary Note B12] The object-forming system described in Supplementary Note B11, wherein the control device controls the object-forming device to perform the first object-forming operation when the distance difference is less than the predetermined threshold value after the second object-forming operation is performed.

[0289] [Supplementary Note B13] The object-forming system described in Supplementary Note B11 or B12, wherein, when the distance difference is less than the predetermined threshold value after the first object-forming operation is performed, the control device controls the object-forming device to continue the first object-forming operation.

[0290] [Supplementary Note B14] The object-forming system described in any one of Supplementary Notes B11 to B13, wherein, when the distance difference exceeds the predetermined threshold value after the second object-forming operation is performed, the control device controls the object-forming device to continue the second object-forming operation.

[0291] [Supplementary Note B15] The shaping system according to any one of Supplementary Notes B1 to B14, wherein the distance over which the layer thickness is the first thickness is longer than the distance over which the layer thickness is the second thickness.

[0292] [Appendix B16] A manufacturing system described in any one of Appendices B1 to B15, wherein the first range of distances in which the layer thickness becomes the first thickness is located in a range shorter than the distance range in which the amount of manufacturing material input into the molten pool does not change when the distance increases.

[0293] [Supplementary Note B17] The shaping system according to Supplementary Note B16, wherein the second range of distances in which the layer thickness is the second thickness is located in a range of distances shorter than the first range.

[0294] [Appendix B18] A manufacturing system described in Appendix B16 or B17, wherein the first range is located in a distance range greater than half the distance at which the amount of the manufacturing material injected into the molten pool does not change when the distance increases.

[0295] [Appendix B19] A manufacturing system described in any one of Appendices B16 to B17, wherein the second range is located in a distance range smaller than half the distance at which the amount of the manufacturing material fed into the molten pool does not change when the distance increases.

[0296] [Appendix B20] The molding system according to any one of Appendices B1 to B19, wherein the distance information acquisition device includes an imaging device capable of capturing an image of the molten pool to generate a molten pool image.

[0297] [Appendix B21] The molding system according to Appendix B20, wherein the imaging device images the molten pool from a direction different from the direction in which the distance is changed.

[0298] [Supplementary Note B22] The molding system according to Supplementary Note B21, wherein the control device controls the molding device to change the distance based on a positional deviation of the molten pool image captured by the imaging device.

[0299] [Appendix B23] The control device controls the molding device so that the size of the molten pool becomes a target size based on the size of the molten pool image captured by the imaging device. This is the molding system described in any one of Appendices B20 to B22.

[0300] [Supplementary Note B24] The modeling system according to Supplementary Note B23, wherein the target size is set depending on the distance between the structure layer and the material supply member.

[0301] [Supplementary Note B25]) The model-forming system according to Supplementary Note B23 or B24, wherein the target size in the first model-forming operation is different from the target size in the second model-forming operation.

[0302] [Supplementary Note B26] The model-forming system according to Supplementary Note B25, wherein the target size in the first model-forming operation is larger than the target size in the second model-forming operation.

[0303] [Appendix B27] A control device that controls a modeling device that sequentially models a plurality of structural layers on a mounting surface, the modeling device comprising: an irradiation optical system that irradiates a modeling beam; a material supply member that supplies modeling material to a molten pool formed by irradiation of the modeling beam; and a distance information acquisition device that acquires distance information regarding the distance between the material supply member and the structural layer modeled by irradiation of the modeling beam from the irradiation optical system and supply of the modeling material from the material supply member, wherein the control device controls the modeling device to select, using the distance information from the distance information acquisition device, a first modeling operation that models the structural layer modeled by the modeling operation by the modeling device so that the layer thickness of the structural layer is a first thickness, or a second modeling operation that models the structural layer modeled by the modeling operation by the modeling device so that the layer thickness is a second thickness that is thinner than the first thickness.

[0304] [Appendix B28] A control method for controlling a modeling device that sequentially models a plurality of structural layers on a mounting surface, the modeling device comprising: an irradiation optical system that irradiates a modeling beam; a material supply member that supplies modeling material to a molten pool formed by irradiation of the modeling beam; and a distance information acquisition device that acquires distance information regarding the distance between the material supply member and the structural layer modeled by irradiation of the modeling beam from the irradiation optical system and supply of the modeling material from the material supply member, the control method comprising: using the distance information from the distance information acquisition device, modeling the structural layer modeled by the modeling operation of the modeling device so that the layer thickness of the structural layer modeled by the modeling operation of the modeling device is a first thickness; and modeling the structural layer modeled by the modeling operation of the modeling device so that the layer thickness of the structural layer modeled by the modeling operation is a second thickness that is thinner than the first thickness.

[0305] [Appendix B29] A computer program that causes a computer to execute the control method described in Appendix B28.

[0306] [Supplementary Note B30] A modeling method for modeling a model from the modeling material, using the modeling system according to any one of Supplementary Notes B1 to B26.

[0307] [Appendix C1] A shaping system comprising: a shaping device that sequentially shaping a plurality of structural layers; and a control device that controls the shaping device, wherein the shaping device comprises: an irradiation optical system that irradiates a shaping beam; a material supply member that supplies shaping material to a molten pool formed by irradiation of the shaping beam; a moving device that moves at least one of the material supply member and the placement surface so as to change the distance between the structural layer formed by irradiation of the shaping beam from the irradiation optical system and supply of the shaping material from the material supply member and the material supply member; and an imaging device that is capable of generating a molten pool image by imaging the molten pool, wherein the control device controls the shaping device to change the distance based on a positional deviation of the molten pool image captured by the imaging device.

[0308] [Appendix C2] The manufacturing system according to Appendix C1, wherein the control device controls the manufacturing device to change the distance when a positional deviation of the molten pool image from a target position exceeds a predetermined threshold.

[0309] [Appendix C3] The molding system according to Appendix C1 or C2, wherein the material supply member supplies the molding material toward the molten pool from a direction oblique to a direction in which the distance between the structure layer and the material supply member is changed.

[0310] [Appendix C4] An embodied molding system according to any one of appendices C1 to C3, wherein the amount of embodied material per unit time fed into the molten pool changes when the distance is changed.

[0311] [Appendix C5] An embodied molding system according to any one of appendices C1 to C4, wherein an increase in the distance increases the amount of embodied material per unit time that is fed into the molten pool.

[0312] [Appendix C7] The shaping system according to any one of Appendices C1 to C5, wherein the moving device moves an optical member of the irradiation optical system that emits the shaping beam and the material supply membe...

Claims

1. A shaping system comprising a shaping device that sequentially shapes a plurality of structural layers on a placement surface, and a control device that controls the shaping device, wherein the shaping device includes an irradiation optical system that irradiates a shaping beam, a material supply member that supplies a shaping material to a molten pool formed by the irradiation of the shaping beam, a distance information acquisition device that acquires distance information regarding the distance between the structural layer shaped by the irradiation of the shaping beam from the irradiation optical system and the supply of the shaping material from the material supply member, and a material supply member, and a moving device that moves at least one of the material supply member and the placement surface so as to change the distance, and the control device includes a memory that stores trajectory information having, for each unit displacement amount by the moving device, layer movement trajectory information regarding the movement trajectory of the irradiation position of the shaping beam from the irradiation optical system, and a processor that reads out the layer movement trajectory information from the trajectory information so as to sequentially transmit a plurality of the layer movement trajectory information to the moving device, and the processor reads out the layer movement trajectory information every M layers when a distance difference regarding the difference between the distance and a target value is within a predetermined threshold based on the distance information acquired by the distance information acquisition device, and reads out the layer movement trajectory information every N layers when the distance difference exceeds the predetermined threshold, where M is a natural number and N is a natural number smaller than M.

2. A shaping apparatus that sequentially shapes a plurality of structural layers on a placement surface, and a control circuit that controls the shaping apparatus. The shaping apparatus includes an irradiation optical system that irradiates a shaping beam, a material supply member that supplies a shaping material to a melting pool formed by the irradiation of the shaping beam, a distance information acquisition device that acquires distance information regarding the distance between the structural layer shaped by the irradiation of the shaping beam from the irradiation optical system and the supply of the shaping material from the material supply member and the material supply member, and a moving device that moves at least one of the material supply member and the placement surface so as to change the distance. The control circuit controls the shaping by the shaping apparatus based on the in-layer movement trajectory information regarding the movement trajectory of the irradiation position of the shaping beam from the irradiation optical system. When the distance information acquired by the distance information acquisition device regarding the L-th layer satisfies a first condition, the control circuit controls the shaping by the shaping apparatus based on the in-layer trajectory information of the layer that is M layers above the L-th layer. When the distance information acquired by the distance information acquisition device regarding the L-th layer satisfies a second condition different from the first condition, the control circuit controls the shaping by the shaping apparatus based on the in-layer trajectory information of the layer that is N layers above the L-th layer. Here, L is a natural number, M is a natural number, and N is a natural number smaller than M. A shaping system.

3. The first condition is that the distance difference regarding the difference between the distance based on the distance information acquired by the distance information acquisition device and the target value is within a predetermined threshold value. The second condition is that the distance difference exceeds the predetermined threshold value. The shaping system according to claim 2.

4. The in-layer movement trajectory information includes information regarding the movement trajectory within a predetermined plane. The shaping system according to any one of claims 1 to 3.

5. The plurality of in-layer movement trajectory information included in the trajectory information includes information regarding the movement trajectory within planes different from each other. The shaping system according to claim 4.

6. The planes different from each other are planes that are at different positions in the moving direction by the moving device. The shaping system according to claim 5.

7. The distance in the moving direction between the planes different from each other corresponds to the unit displacement amount. The shaping system according to claim 6.

8. The shaping system according to any one of claims 1 to 7, wherein the moving device moves at least one of the material supply member and the placement surface so as to change the positional relationship between the material supply member and the placement surface in a direction intersecting the traveling direction of the shaping beam to be irradiated.

9. The shaping system according to claim 8, wherein the processor controls the moving device so as to change the positional relationship based on the read intra-layer trajectory information.

10. The shaping system according to any one of claims 1 to 9, wherein, after the shaping operation based on the intra-layer trajectory information read for each N layers, when the distance difference based on the acquired distance information is less than a predetermined threshold value, the processor controls the shaping device to perform a shaping operation based on the intra-layer trajectory information read for each M layers.

11. The shaping system according to any one of claims 1 to 10, wherein, after the shaping operation based on the intra-layer trajectory information read for each M layers, when the distance difference based on the acquired distance information is less than a predetermined threshold value, the processor controls the shaping device to continue the shaping operation based on the intra-layer trajectory information read for each M layers.

12. The shaping system according to any one of claims 1 to 11, wherein, after the shaping operation based on the intra-layer trajectory information read for each N layers, when the distance difference based on the acquired distance information is greater than a predetermined threshold value, the processor controls the shaping device to continue the shaping operation based on the intra-layer trajectory information read for each N layers.

13. The shaping system according to any one of claims 1 to 12, wherein the thickness of one of the structural layers shaped by the shaping operation based on the intra-layer trajectory information read for each M layers is greater than the thickness of one of the structural layers shaped by the shaping operation based on the intra-layer trajectory information read for each N layers.

14. The shaping system according to any one of claims 1 to 13, wherein the distance information acquisition device includes an imaging device capable of generating a molten pool image by imaging the molten pool.

15. The shaping system according to claim 14, wherein the imaging device images the molten pool from a direction different from the direction in which the distance is changed.

16. The shaping system according to claim 15, wherein the processor controls the shaping device to change the distance based on the displacement of the molten pool image by the imaging device.

17. The shaping system according to any one of claims 14 to 16, wherein the processor controls the shaping device so that the size of the molten pool becomes a target size based on the size of the molten pool image by the imaging device.

18. The shaping system according to claim 17, wherein the target size is set according to the distance between the structural layer and the material supply member.

19. The shaping system according to claim 17 or 18, wherein the target size during the shaping operation based on the in-layer trajectory information read for each M layer is different from the target size during the shaping operation based on the in-layer trajectory information read for each N layer.

20. The shaping system according to claim 19, wherein the target size during the shaping operation based on the in-layer trajectory information read for each M layer is larger than the target size during the shaping operation based on the in-layer trajectory information read for each N layer.

21. The shaping system according to any one of claims 1 to 20, wherein the input amount per unit time of the shaping material input into the molten pool during the shaping operation based on the in-layer trajectory information read for each M layer is different from the input amount per unit time of the shaping material input into the molten pool during the shaping operation based on the in-layer trajectory information read for each N layer.

22. The shaping system according to claim 21, wherein the input amount per unit time of the shaping material input into the molten pool during the shaping operation based on the in-layer trajectory information read for each M layer is larger than the input amount per unit time of the shaping material input into the molten pool during the shaping operation based on the in-layer trajectory information read for each N layer.

23. The shaping system according to any one of claims 1 to 22, wherein the moving device moves the optical member that emits the shaping beam among the irradiation optical systems and the material supply member.

24. A control device for controlling a modeling apparatus that sequentially models a plurality of structural layers on a placement surface, the modeling apparatus comprising: an irradiation optical system that irradiates a modeling beam; a material supply member that supplies a modeling material to a molten pool formed by the irradiation of the modeling beam; a distance information acquisition device that acquires distance information regarding the distance between the structural layer modeled by the irradiation of the modeling beam from the irradiation optical system and the supply of the modeling material from the material supply member, and the material supply member; and a moving device that moves at least one of the material supply member and the placement surface so as to change the distance, the control device comprising: a memory that stores trajectory information having, for each unit displacement amount by the moving device, layer-internal movement trajectory information regarding the movement trajectory of the irradiation position of the modeling beam from the irradiation optical system; and a processor that reads out the layer-internal trajectory information from the trajectory information so as to sequentially transmit a plurality of the layer-internal trajectory information to the moving device, the processor reading out the layer-internal trajectory information every M layers when a distance difference regarding the difference between the distance and a target value is within a predetermined threshold based on the distance information acquired by the distance information acquisition device, and reading out the layer-internal trajectory information every N layers when the distance difference exceeds the predetermined threshold, where M is a natural number and N is a natural number smaller than M. Control device.

25. A control circuit for controlling a shaping apparatus that sequentially shapes a plurality of structural layers on a placement surface, the shaping apparatus including: an irradiation optical system that irradiates a shaping beam; a material supply member that supplies a shaping material to a melting pool formed by the irradiation of the shaping beam; a distance information acquisition device that acquires distance information regarding the distance between a structural layer shaped by the irradiation of the shaping beam from the irradiation optical system and the supply of the shaping material from the material supply member, and the material supply member; a moving device that moves at least one of the material supply member and the placement surface so as to change the distance; the control circuit controls the shaping by the shaping apparatus based on in-layer movement trajectory information regarding the movement trajectory of the irradiation position of the shaping beam from the irradiation optical system, and when the distance information acquired by the distance information acquisition device regarding the L-th layer satisfies a first condition, controls the shaping by the shaping apparatus based on the in-layer trajectory information of the layer that is M layers above the L-th layer, and when the distance information acquired by the distance information acquisition device regarding the L-th layer satisfies a second condition different from the first condition, controls the shaping by the shaping apparatus based on the in-layer trajectory information of the layer that is N layers above the L-th layer, where L is a natural number, M is a natural number, and N is a natural number smaller than M. The control circuit.

26. A control method for controlling a modeling apparatus that sequentially models a plurality of structural layers on a placement surface, the modeling apparatus comprising: an irradiation optical system that irradiates a modeling beam; a material supply member that supplies a modeling material to a melting pool formed by the irradiation of the modeling beam; a distance information acquisition device that acquires distance information regarding the distance between the structural layer modeled by the irradiation of the modeling beam from the irradiation optical system and the supply of the modeling material from the material supply member, and the material supply member; and a moving device that moves at least one of the material supply member and the placement surface so as to change the distance, the control method comprising: preparing trajectory information having, for each unit displacement amount by the moving device, in-layer movement trajectory information regarding a movement trajectory of an irradiation position of the modeling beam from the irradiation optical system; and reading out the in-layer trajectory information from the trajectory information so as to sequentially transmit a plurality of the in-layer trajectory information to the moving device, the reading out comprising: reading out the in-layer trajectory information every M layers when a distance difference regarding the difference between the distance and a target value is within a predetermined threshold based on the distance information acquired by the distance information acquisition device; and reading out the in-layer trajectory information every N layers when the distance difference exceeds the predetermined threshold based on the distance information acquired by the distance information acquisition device, where M is a natural number and N is a natural number smaller than M.

27. A control method for controlling a shaping apparatus that sequentially shapes a plurality of structural layers on a placement surface, the shaping apparatus including: an irradiation optical system that irradiates a shaping beam; a material supply member that supplies a shaping material to a melting pool formed by irradiation of the shaping beam; a distance information acquisition device that acquires distance information regarding the distance between a structural layer shaped by irradiation of the shaping beam from the irradiation optical system and supply of the shaping material from the material supply member, and the material supply member; and a moving device that moves at least one of the material supply member and the placement surface so as to change the distance, the control method including: controlling the shaping by the shaping apparatus based on in-layer movement trajectory information regarding a movement trajectory of an irradiation position of the shaping beam from the irradiation optical system; when the distance information acquired by the distance information acquisition device regarding the L-th layer satisfies a first condition, controlling the shaping by the shaping apparatus based on the in-layer trajectory information of the layer that is M layers above the L-th layer; and when the distance information acquired by the distance information acquisition device regarding the L-th layer satisfies a second condition different from the first condition, controlling the shaping by the shaping apparatus based on the in-layer trajectory information of the layer that is N layers above the L-th layer, where L is a natural number, M is a natural number, and N is a natural number smaller than M.

28. A computer program causing a computer to execute the control method according to claim 26 or 27.

29. A shaping method for shaping an object from the shaping material using the shaping system according to any one of claims 1 to 23.

30. A shaping system comprising a shaping device that sequentially shapes a plurality of structural layers on a placement surface, and a control device that controls the shaping device. The shaping device includes an irradiation optical system that irradiates a shaping beam, a material supply member that supplies a shaping material to a melting pool formed by the irradiation of the shaping beam, and a distance information acquisition device that acquires distance information regarding the distance between the structural layer shaped by the irradiation of the shaping beam from the irradiation optical system and the supply of the shaping material from the material supply member and the material supply member. The control device controls the shaping device so as to switch between a first condition in which the ratio of the increase amount of the input amount of the shaping material input into the melting pool with respect to the increase amount of the distance is a first ratio, and a second condition in which the ratio of the increase amount of the input amount with respect to the increase amount of the distance is a second ratio greater than the first ratio. Based on the distance information acquired by the distance information acquisition device, when the distance difference regarding the difference between the distance and the target value exceeds a predetermined threshold, the control device controls the shaping device to switch from shaping under the first condition to shaping under the second condition.

31. The shaping system according to claim 30, further comprising a moving device that moves at least one of the material supply member and the placement surface so as to change the distance.

32. The shaping system according to claim 31, wherein the control device controls the moving device to change the distance when switching between the first condition and the second condition.

33. The shaping system according to claim 31 or 32, wherein the material supply member supplies the shaping material toward the melting pool from an oblique direction with respect to the direction in which the distance between the structural layer and the material supply member is changed.

34. The shaping system according to any one of claims 31 to 33, wherein the input amount per unit time of the shaping material input into the melting pool changes when the distance is changed.

35. The shaping system according to any one of claims 31 to 34, wherein when the distance increases, the input amount per unit time of the shaping material input into the melting pool increases.

36. The shaping system according to any one of claims 31 to 35, wherein the moving device moves an optical member that emits the shaping beam among the irradiation optical system and the material supply member.

37. The shaping system according to any one of claims 30 to 36, wherein the amount of the shaping material input per unit time into the melting bath is changed by changing the positional relationship in the plane between the material supply region, which is the region where the shaping material is supplied, and the melting bath, in the plane where the melting bath is located.

38. The shaping system according to any one of claims 30 to 37, wherein the control device controls the shaping device so as to perform the shaping operation under the first condition when the distance difference is less than the predetermined threshold value after the shaping operation under the second condition is performed.

39. The shaping system according to any one of claims 30 to 38, wherein the control device controls the shaping device so as to continue the shaping operation under the first condition when the distance difference is less than the predetermined threshold value after the shaping operation under the first condition is performed.

40. The shaping system according to any one of claims 30 to 39, wherein the control device controls the shaping device so as to continue the shaping operation under the second condition when the distance difference is greater than the predetermined threshold value after the shaping operation under the second condition is performed.

41. The shaping system according to any one of claims 30 to 40, wherein the thickness of one structural layer shaped under the first condition is different from the thickness of one structural layer shaped under the second condition.

42. The shaping system according to any one of claims 30 to 41, wherein the thickness of one structural layer shaped under the first condition is greater than the thickness of one structural layer shaped under the second condition.

43. The shaping system according to any one of claims 30 to 42, wherein the distance for the first condition is longer than the distance for the second condition.

44. The shaping system according to any one of claims 30 to 43, wherein the first range of the distance for the first condition is located in a range shorter than the range in which the input amount of the shaping material input into the melting bath does not change when the distance increases.

45. The shaping system according to claim 44, wherein the second range of the distance for the second condition is located in a range shorter than the first range.

46. The shaping system according to claim 44 or 45, wherein the first range is located in a distance range greater than half of the distance at which the input amount of the shaping material input into the melting pool does not change when the distance increases.

47. The shaping system according to any one of claims 44 to 46, wherein the second range is located in a distance range smaller than half of the distance at which the input amount of the shaping material input into the melting pool does not change when the distance increases.

48. The shaping system according to any one of claims 30 to 47, wherein the distance information acquisition device includes an imaging device capable of generating a melting pool image by imaging the melting pool.

49. The shaping system according to claim 48, wherein the imaging device images the melting pool from a direction different from the direction in which the distance is changed.

50. The shaping system according to claim 49, wherein the control device controls the shaping device to change the distance based on the positional deviation of the melting pool image by the imaging device.

51. The shaping system according to any one of claims 48 to 50, wherein the control device controls the shaping device so that the size of the melting pool becomes a target size based on the size of the melting pool image by the imaging device.

52. The shaping system according to claim 51, wherein the target size is set according to the distance between the structural layer and the material supply member.

53. The shaping system according to claim 51 or 52, wherein the target size during the shaping operation under the first condition is different from the target size during the shaping operation under the second condition.

54. The shaping system according to claim 53, wherein the target size during the shaping operation under the first condition is larger than the target size during the shaping operation under the second condition.

55. A control device for controlling a shaping device that sequentially shapes a plurality of structural layers, the shaping device including: an irradiation optical system that irradiates a shaping beam; a material supply member that supplies a shaping material to a molten pool formed by irradiation of the shaping beam; and a distance information acquisition device that acquires distance information regarding the distance between a structural layer shaped by irradiation of the shaping beam from the irradiation optical system and supply of the shaping material from the material supply member, and the material supply member, the control device controlling the shaping device so as to switch between a first condition in which a ratio of an increase amount of the input amount of the shaping material input into the molten pool with respect to an increase amount of the distance is a first ratio, and a second condition in which the ratio of the increase amount of the input amount with respect to the increase amount of the distance is a second ratio greater than the first ratio, and controlling the shaping device to switch from shaping under the first condition to shaping under the second condition when a distance difference regarding the difference between the distance and a target value exceeds a predetermined threshold value based on the distance information acquired by the distance information acquisition device.

56. A control method for controlling a shaping device that sequentially shapes a plurality of structural layers, the shaping device including: an irradiation optical system that irradiates a shaping beam; a material supply member that supplies a shaping material to a molten pool formed by irradiation of the shaping beam; and a distance information acquisition device that acquires distance information regarding the distance between a structural layer shaped by irradiation of the shaping beam from the irradiation optical system and supply of the shaping material from the material supply member, and the material supply member, the control method including switching between a first condition in which a ratio of an increase amount of the input amount of the shaping material input into the molten pool with respect to an increase amount of the distance is a first ratio, and a second condition in which the ratio of the increase amount of the input amount with respect to the increase amount of the distance is a second ratio greater than the first ratio, and switching from shaping under the first condition to shaping under the second condition when a distance difference regarding the difference between the distance and a target value exceeds a predetermined threshold value based on the distance information acquired by the distance information acquisition device.

57. A computer program for causing a computer to execute the control method according to claim 56.

58. A shaping method for shaping an object from the shaping material using the shaping system according to any one of claims 30 to 54.

59. A shaping system comprising a shaping device that sequentially shapes a plurality of structural layers, and a control device that controls the shaping device. The shaping device includes an irradiation optical system that irradiates a shaping beam, a material supply member that supplies a shaping material to a melting pool formed by the irradiation of the shaping beam, a distance information acquisition device that acquires distance information regarding the distance between a structural layer shaped by the irradiation of the shaping beam from the irradiation optical system and the supply of the shaping material from the material supply member and the material supply member, and a moving device that moves at least one of the material supply member and a shaped object including the shaped structural layer so as to change the distance. The control device controls the shaping device to perform a first shaping operation in which, each time a structural layer is formed, one of the material supply member and the shaped object is separated by a first distance and then the structural layer is newly shaped. When the difference between the position of the structural layer and a desired position exceeds a predetermined threshold after the first shaping operation is performed, the control device controls the shaping device to perform a second shaping operation in which, each time a structural layer is formed, the distance between the material supply member and the shaped object is separated by a second distance shorter than the first distance and then the structural layer is newly shaped.

60. The shaping system according to claim 59, wherein the control device controls the shaping device to perform the first shaping operation when the difference is below the predetermined threshold after the second shaping operation is performed.

61. The shaping system according to claim 59 or 60, wherein the control device controls the shaping device to continue the first shaping operation when the difference is below the predetermined threshold after the first shaping operation is performed.

62. The shaping system according to any one of claims 59 to 61, wherein the control device controls the shaping device to continue the second shaping operation when the difference exceeds the predetermined threshold after the second shaping operation is performed.

63. The shaping system according to any one of claims 59 to 62, wherein at least one of the first and second distances is set based on the throughput of the shaping device.

64. The shaping system according to any one of claims 59 to 63, wherein the first distance is greater than half of the distance that can maximize the throughput of the shaping device.

65. The second distance is a distance smaller than half of the distance that can maximize the throughput of the shaping device. The shaping system according to any one of claims 59 to 64.

66. At least one of the first and second distances is set such that the thickness of the structural layer shaped by the first shaping operation is greater than the thickness of the structural layer shaped by the second shaping operation. The shaping system according to any one of claims 59 to 65.

67. The thickness of the structural layer shaped by the shaping device varies according to the relationship with the distance between the material supply member and the shaped object, and at least one of the first and second distances is set based on the relationship between the thickness and the distance. The shaping system according to any one of claims 59 to 66.

68. The first distance is a distance corresponding to the thickness included in a characteristic region where the relationship between the thickness and the distance does not become a desired relationship. The shaping system according to claim 67.

69. The second distance is a distance corresponding to the distance included in a characteristic region where the relationship between the thickness and the distance becomes a desired relationship. The shaping system according to claim 67 or 68.

70. The desired relationship includes a linear relationship. The shaping system according to any one of claims 67 to 69.

71. The second distance is smaller than half of the first distance. The shaping system according to any one of claims 59 to 70.

72. The thickness of the structural layer shaped by the first shaping operation is greater than the thickness of the structural layer shaped by the second shaping operation. The shaping system according to any one of claims 59 to 71.

73. The irradiation optical system forms a melting pool by irradiating the shaping beam onto the surface of the shaped object, the control device controls the shaping device so that the size of the melting pool becomes a target size, and the target size when the first shaping operation is being performed is different from the target size when the second shaping operation is being performed. The shaping system according to any one of claims 59 to 72.

74. The target size when the first shaping operation is being performed is larger than the target size when the second shaping operation is being performed. The shaping system according to claim 73.

75. The amount of the modeling material input into the melting pool per unit time by the material supply member when the first modeling operation is being performed is different from the amount of the modeling material input into the melting pool per unit time by the material supply member when the second modeling operation is being performed. The modeling system according to any one of claims 59 to 74.

76. The amount of the modeling material input into the melting pool per unit time by the material supply member when the first modeling operation is being performed is greater than the amount of the modeling material input into the melting pool per unit time by the material supply member when the second modeling operation is being performed. The modeling system according to any one of claims 59 to 75.

77. The moving device moves an optical member that emits the modeling beam among the irradiation optical systems and the material supply member. The modeling system according to any one of claims 59 to 76.

78. A control device that controls a modeling device that sequentially models a plurality of structural layers, wherein the modeling device includes: an irradiation optical system that irradiates a modeling beam; a material supply member that supplies a modeling material to a melting pool formed by the irradiation of the modeling beam; a distance information acquisition device that acquires distance information regarding the distance between the structural layer modeled by the irradiation of the modeling beam from the irradiation optical system and the supply of the modeling material from the material supply member and the material supply member; and a moving device that moves at least one of the material supply member and the modeled object including the modeled structural layer so as to change the distance. The control device controls the modeling device to perform a first modeling operation of newly modeling the structural layer after separating either the material supply member or the modeled object by a first distance each time the structural layer is formed. When the difference between the position of the structural layer and the desired position exceeds a predetermined threshold after the first modeling operation is performed, the control device controls the modeling device to perform a second modeling operation of newly modeling the structural layer after separating the distance between the material supply member and the modeled object by a second distance that is less than the first distance each time the structural layer is formed. Control device.

79. A control method for controlling a shaping apparatus that sequentially shapes a plurality of structural layers, the shaping apparatus comprising: an irradiation optical system that irradiates a shaping beam; a material supply member that supplies a shaping material to a melting pool formed by irradiation of the shaping beam; a distance information acquisition device that acquires distance information regarding the distance between the structural layer shaped by irradiation of the shaping beam from the irradiation optical system and supply of the shaping material from the material supply member, and the material supply member; and a moving device that moves at least one of the material supply member and the shaped article including the shaped structural layer so as to change the distance, the control method comprising: controlling the shaping apparatus to perform a first shaping operation of newly shaping the structural layer after separating either the material supply member or the shaped article by a first distance each time the structural layer is formed; and when the difference between the position of the structural layer and a desired position exceeds a predetermined threshold value after the first shaping operation is performed, controlling the shaping apparatus to perform a second shaping operation of newly shaping the structural layer after separating the distance between the material supply member and the shaped article by a second distance that is less than the first distance each time the structural layer is formed.

80. A computer program for causing a computer to execute the control method according to claim 79.

81. A shaping method for shaping a shaped article from the shaping material using the shaping system according to any one of claims 59 to 77.

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