Sensor element and sensor array

Abstract

This sensor element is for selectively recognizing molecules and comprises: a detection part having a molecule recognition site and a hydrocarbon chain R1 in the same molecule; and a semiconductor part having a hydrocarbon chain R2, wherein the semiconductor part changes electrical conduction characteristics in accordance with whether said molecule is attached or detached in the detection part.

Description

Sensor elements and sensor arrays

[0001] The present invention relates to a sensor element and a sensor array.

[0002] Conventionally, sensor elements have a molecular recognition site that is sensitive to a target molecule and a site that electrically outputs a signal generated at the molecular recognition site. Naturally occurring substances have been used as the detection site including the molecular recognition site. For example, in the examples of Patent Document 1, a human prostate-specific antibody is used.

[0003] Japanese Patent Application Laid-Open No. 2006-258661

[0004] Conventionally, naturally occurring substances have been used as sensing elements containing molecular recognition sites, and therefore the types of target molecules that can be detected have been fixed.

[0005] In contrast, an object of the present disclosure is to increase the degree of freedom in designing a sensor element by using a detection unit that is arbitrarily designed by organic synthesis.

[0006] The present disclosure provides the following: [1] A sensor element that selectively recognizes a molecule, comprising a molecular recognition site and a hydrocarbon chain R １ and a hydrocarbon chain R ２ and a semiconductor part having the hydrocarbon chain R, wherein the semiconductor part changes electrical conduction characteristics in response to attachment and detachment of the molecule in the detection part. [2] The sensor element according to [1], wherein the molecule is an organic molecule in the atmosphere. [3] The detection part is １ The hydrocarbon chain R １ and / or the hydrocarbon chain R ２ The sensor element according to [1] or [2], wherein the hydrocarbon chain R １is an alkyl group having 3 to 40 carbon atoms. [5] The sensor element according to any one of [1] to [4], wherein the molecular recognition site interacts with the target molecule through intermolecular interaction. [6] The sensor element according to any one of [1] to [5], wherein the electrical conduction characteristics of the semiconductor part are changed by reversible binding between the molecular recognition site and the target molecule. [7] The sensor element according to any one of [1] to [6], wherein the sensing part is a nitrogen atom-containing group having an alkyl group having 3 to 40 carbon atoms. [8] The sensing part is a group represented by the formula: R １ is an alkyl group having 3 to 40 carbon atoms, and R １１ is an alkylene group having 1 to 10 carbon atoms, and R １２ is an alkylene group having 1 to 10 carbon atoms, x1 is 0 or 1, x2 is 0 or 1, R ２１ is an alkyl group having 1 to 3 carbon atoms or an alkoxy group having 1 to 3 carbon atoms, R ２２ represents an alkyl group having 1 to 3 carbon atoms or an alkoxyl group having 1 to 3 carbon atoms, y1 represents an integer of 0 to 4, y2 represents an integer of 0 to 4, and M ＋ [9] The sensor element according to any one of [1] to [7], wherein the detecting unit has a structure derived from cucurbit[n]uril, and the structure derived from cucurbit[n]uril is a moiety contained in cucurbit[n]uril: (wherein * represents a bond), at least one H is O(CH ２ ) ｍ -CH ３

[10] The sensor element according to any one of [1] to [7], wherein n is an integer of 5 to 14, and m is an integer of 2 to 39.

[10] The detection unit is ３ - (CH ２ ) ｎａ -NH ２and n a is an integer from 1 to 20.

[11] The sensor element according to any one of [1] to

[10] , wherein the semiconductor portion is a polymer organic material.

[12] The sensor element according to

[11] , wherein the polymer organic material is at least one selected from polythiophenes, polythienothiophenes, dithiophenes, benzothienobenzothiophenes, dinaphthothienothiophenes, polyacetylenes, polyfluorenes, polyphenylene vinylenes, polypyrroles, and polyanilines.

[13] The sensor element according to any one of [1] to

[12] , wherein the semiconductor portion is at least one selected from thienothiophenes, acenes, phenacenes, fullerenes, phthalocyanines, oligothiophenes, perylenes, and quinolinol complexes.

[14] The sensor element according to any one of [1] to

[13] , wherein the semiconductor part is covered with a layer of the detection part, and the layer of the detection part functions as a gas barrier layer that blocks moisture and oxygen.

[15] The sensor element includes a gate electrode, a dielectric part located on the gate electrode, a drain electrode and a source electrode located on the dielectric part and isolated from each other, and the semiconductor part located on the dielectric part, the drain electrode, and the source electrode, and the dielectric part is a hydrocarbon chain R ７２

[16] The sensor element according to any one of [1] to

[14] , wherein the hydrocarbon chain R ７２ The sensor element according to

[15] , wherein the number of carbon atoms in the hydrocarbon chain R is 14.

[17] ７２ is the hydrocarbon chain R １

[18] The sensor element according to any one of

[15] to

[17] , wherein the sensing part is immobilized on the phosphonic acid by intermolecular interaction with the hydrocarbon chain R.

[19] The sensor element according to any one of [1] to

[18] , wherein the sensor element includes a transistor, and the semiconductor part is an active layer of the transistor.

[20] The sensor element according to

[19] , wherein the threshold voltage and mobility of the transistor change upon recognition of a target molecule.

[21] A sensor array having two or more sensor elements according to any one of [1] to

[20] , wherein the semiconductor parts of the two or more sensor elements are made of the same material and include two or more types of molecular recognition sites.

[22] A sensor array having a hydrocarbon chain R ２ On the surface of the semiconductor portion having a molecular recognition site and a hydrocarbon chain R １ a solution containing a sensing portion having the above in the same molecule is applied to the sensor element.

[0007] According to the present disclosure, the degree of freedom in designing the sensor element can be increased by using a detection unit designed by organic synthesis.

[0008] 1 is a schematic cross-sectional view showing a sensor element of a first embodiment. FIG. 1 is a schematic cross-sectional view showing a sensor element of a first modification. FIG. 2 is a schematic cross-sectional view showing a sensor element of a second modification. FIG. 3 is a schematic cross-sectional view showing a sensor element of a third modification. FIG. 4 is a schematic diagram showing a manufacturing method of the sensor element of the first embodiment. FIG. 5 is a schematic diagram explaining the operation of Example 3. FIG. 6 is a graph showing the rate of change of a transistor threshold voltage with respect to the concentration of isovaleric acid gas. FIG. 7 is a graph showing the relationship between the gate-source voltage and the absolute value of the drain current when isovaleric acid gas is used. FIG. 8 is a schematic diagram explaining how to determine the transistor threshold voltage. FIG. 9 is a graph showing the rate of change of a transistor threshold voltage with respect to the concentration of propionic acid gas. FIG. 10 is a graph showing the relationship between the gate-source voltage and the absolute value of the drain current when propionic acid gas is used. FIG. 11 is a graph showing the rate of change of a transistor threshold voltage with respect to the concentration of butyric acid gas. FIG. 12 is a graph showing the relationship between the gate-source voltage and the absolute value of the drain current when butyric acid gas is used. FIG. 13 is a graph showing the rate of change of a transistor threshold voltage with respect to the concentration of valeric acid gas. 1 is a graph showing the rate of change in transistor threshold voltage with respect to the concentration of hexanoic acid gas; 2 is a graph showing the relationship between the gate-source voltage and the absolute value of the drain current when hexanoic acid gas is used; 3 is a graph showing the rate of change in transistor threshold voltage when each gas (2 ppm) is used; 4 is a graph showing the rate of change in mobility when each gas (2 ppm) is used; 5 is a graph showing the rate of change in V when each gas (2 ppm) is used ＧＳ 1 is a graph showing the rate of change of drain current when V is −2 V. ＧＳ 1 is a graph showing the rate of change of drain current when V is −3 V. ＧＳ 1 is a graph showing the rate of change of drain current when V is -3 V. 2 is a graph showing the rate of change of transistor threshold voltage with respect to the concentration of acetaldehyde gas. 3 is a graph showing the relationship between gate-source voltage and absolute value of drain current when acetaldehyde gas is used. 4 is a graph showing the relationship between gate-source voltage and absolute value of drain current when each gas (6 ppm) is used. ＧＳ 10 is a graph showing the rate of change of drain current at −3V.

[0009] The sensor element of the present disclosure, the sensor array using the sensor element, and the manufacturing method will be described in detail below, but the present disclosure is not limited thereto.

[0010] [Sensor Element] (First Embodiment) FIG. 1A is a schematic cross-sectional view showing a first embodiment of a sensor element 10 according to the present disclosure. As shown in FIG. 1A, the sensor element 10 includes a substrate 4, a gate electrode 5 located on the substrate 4, a dielectric portion 7 located on the gate electrode 5, a bank portion 6 located from the substrate 4 toward the drain electrode 81 or toward the source electrode 82 and in contact with the gate electrode 5 and the dielectric portion 7, a drain electrode 81 and a source electrode 82 located on the dielectric portion 7 and the bank portion 6 and isolated from each other, and a detection layer 1 located on the dielectric portion 7, the drain electrode 81, and the source electrode 82. The sensor element 10 has a bottom surface facing the substrate 4, a top surface facing the detection layer 1 and opposing the bottom surface, a first end surface perpendicular to the bottom surface and the top surface, and located on the left side of the drawing, and a second end surface opposing the first end surface and located on the right side of the drawing. The film thickness of the sensor element 10 is not particularly limited, but may be, for example, in the range of 80 to 200 nm. In FIG. 1, the X direction is the direction from the left side of the paper to the right side of the paper, and is also called the width direction. The Z direction is the direction from the bottom to the top of the paper, and is also called the height direction. The Y direction is the direction perpendicular to the X and Z directions, and is also called the thickness direction. When arranged in the order X, Y, and Z, a right-handed system is formed.

[0011] The detection layer 1 has a semiconductor portion 3 and a detection portion 2 located on the semiconductor portion 3, and the detection portion 2 is located on the upper portion of the sensor element (upper side of the paper in FIG. 1A). The detection layer 1 (sensor element 10) selectively recognizes molecules and has a molecular recognition site and a hydrocarbon chain R １ a detection unit 2 (receptor unit) having the above in the same molecule, and a hydrocarbon chain R ２and a semiconductor part 3 having the compound represented by the formula (I) and the compound represented by the formula (II), wherein the semiconductor part 3 changes its electrical conduction characteristics in response to the attachment and detachment of the molecule in the detection part 2. Note that the "molecule" mentioned above includes both electrically neutral and ionic molecules. The molecule is an atomic group formed by a covalent bond, a coordinate bond, and / or an ionic bond, i.e., one molecule does not form the above bond with another molecule.

[0012] As described above, the sensor element 10 of the present disclosure includes the detection portion 2 and the semiconductor portion 3, and the detection portion 2 and the semiconductor portion 3 each include a hydrocarbon chain R １ and R ２ These two types of hydrocarbon chains allow the sensing unit 2 and the semiconductor unit 3 to be immobilized, and as a result, the molecular recognition site included in the sensing unit 2 can also be immobilized. Furthermore, since the sensing unit 2 can be formed into any structure by organic synthesis, it is possible to create sensor elements 10 having a variety of molecular recognition sites. In other words, it is easy to form the sensing unit 2 in accordance with the target molecule to be measured. Furthermore, the sensing unit 2 can be easily created by organic synthesis, which increases the design freedom of the sensor element 10.

[0013] Preferably, the change in electrical conduction properties can be measured by measuring the variation in potential.

[0014] In one embodiment, the sensor element 10 may be located in a closed system, for example, the sensor element 10 may be provided in a device that is not in direct contact with the outside world.

[0015] In one embodiment, the sensor element 10 may be located in an open system, in which case the target molecules may be organic molecules in the atmosphere.

[0016] The target molecule refers to a molecule that can interact with the detection unit 2, specifically, with the molecular recognition site.

[0017] The target molecule may contain a functional group, such as at least one selected from a hydroxy group, an aldehyde group, a carbonyl group, a carboxy group, a nitro group, an amino group, a sulfo group, a halogeno group, an ester bond, and an amide bond.

[0018] The target molecule is not particularly limited, but examples thereof include carboxylic acids such as acetic acid, propionic acid, butyric acid, valeric acid, and hexanoic acid; aldehydes such as formaldehyde, acetaldehyde, hexanal, and octanal; and alkanes such as hexane. Of these, carboxylic acids and aldehydes are preferred.

[0019] In one embodiment, the boiling point of the target molecule is, for example, 25° C. or lower.

[0020] In one aspect, the vapor pressure of the target molecule at 25° C. is 1 Pa or more. The upper limit of the vapor pressure is not particularly limited, but may be 1 MPa or less, 0.8 MPa or less, or 0.6 MPa or less.

[0021] In one aspect, the boiling point of the target molecule is 25° C. or lower, and the vapor pressure of the target molecule at 25° C. is 1 Pa or higher. The upper limit of the vapor pressure is not particularly limited, but may be 1 MPa or lower, 0.8 MPa or lower, or 0.6 MPa or lower.

[0022] The detection unit 2 is provided on the semiconductor unit 3 by, for example, coating a raw material compound. Preferably, the detection unit 2 is １ is a hydrocarbon chain R １ and / or hydrocarbon chain R ２ The molecules are immobilized on the semiconductor portion 3 by intermolecular interaction.

[0023] Preferably, the hydrocarbon chain R １ is an alkyl group having 3 to 40 carbon atoms or a derivative thereof, and more preferably an alkyl group having 6 to 20 carbon atoms. Here, the alkyl group derivative may be a chain containing at least one of an oxygen atom and a sulfur atom in the longest chain of the alkyl chain and / or containing an unsaturated bond between carbon atoms. １ may be branched or straight chain.

[0024] The alkyl group is more preferably a straight-chain alkyl group having 3 to 40 carbon atoms, and even more preferably a straight-chain alkyl group having 6 to 20 carbon atoms. Preferably, the straight-chain alkyl group does not contain an oxygen atom, a sulfur atom, or an unsaturated bond.

[0025] Preferably, the hydrocarbon chain R ２ is an alkyl group having 3 to 40 carbon atoms or a derivative thereof, and more preferably an alkyl group having 10 to 16 carbon atoms. Here, the alkyl group derivative may be such that the longest chain of the alkyl chain contains at least one of an oxygen atom and a sulfur atom and / or contains an unsaturated bond between carbon atoms. ２ may be branched or straight chain.

[0026] The alkyl group is more preferably a straight-chain alkyl group having 3 to 40 carbon atoms, and even more preferably a straight-chain alkyl group having 10 to 16 carbon atoms. Preferably, the straight-chain alkyl group does not contain an oxygen atom, a sulfur atom, or an unsaturated bond.

[0027] In one embodiment, the molecular recognition moiety interacts with the target molecule through an intermolecular interaction.

[0028] In one embodiment, the target molecule forms a reversible bond with the molecular recognition site, thereby changing the electrical conduction properties of the semiconductor portion. The reversible bond can be a covalent or non-covalent interaction. The non-covalent interaction can be, for example, one or more selected from the group consisting of an ionic bond, a hydrogen bond, a halogen bond, a dipole-dipole interaction, a dipole-induced dipole interaction, a London dispersion force, a π-π interaction, a cation-π interaction, an anion-π interaction, and a polar-π interaction.

[0029] The molecular recognition site may contain a functional group, such as at least one selected from a hydroxy group, an aldehyde group, a carbonyl group, a carboxy group, a nitro group, an amino group, a sulfo group, a halogeno group, an ester bond, an amide bond, and an azo group.

[0030] In one embodiment, the molecular recognition moiety is -NH ２ It is the base.

[0031] In one embodiment, the molecular recognition moiety is a -NH-C(=O)-NH- group.

[0032] In one embodiment, the molecular recognition moiety and the target molecule both comprise a functional group.

[0033] In one embodiment, the molecular recognition site comprises a functional group and the target molecule does not have a functional group.

[0034] In one embodiment, the detection unit 2 is a nitrogen atom-containing group having an alkyl group having 3 to 40 carbon atoms.

[0035] In one embodiment, the detection unit 2 is ３ - (CH ２ ) ｎａ -NH ２ and na is an integer of 1 to 20, preferably an integer of 5 to 20, more preferably an integer of 10 to 20, particularly preferably an integer of 13 to 17, for example, 15.

[0036] In one embodiment, the sensing unit 2 has a dipicolylamine metal complex. The dipicolylamine metal complex has a molecular recognition ability for an anionic species at the metal portion.

[0037] Preferably, the dipicolylamine metal complex can have a structure represented by the following formula:

[0038] In the above formula, R １ is a hydrocarbon chain R １ corresponds to R １１ is an alkylene group having 1 to 10 carbon atoms, x1 is 0 or 1, and R １２ is an alkylene group having 1 to 10 carbon atoms, x2 is 0 or 1, and R ２１ is an alkyl group having 1 to 3 carbon atoms or an alkoxy group having 1 to 3 carbon atoms, R ２２ represents an alkyl group having 1 to 3 carbon atoms or an alkoxyl group having 1 to 3 carbon atoms, y1 represents an integer of 0 to 4, y2 represents an integer of 0 to 4, and M ＋is a metal ion. The detection unit 2 has a dipicolylamine metal complex, so that the metal ion M ＋ The target molecule can be sensed at the interface between the semiconductor part 3 and the detection part 2, and the electrical characteristics of the sensor element 10, such as the transistor characteristics, change depending on the attachment and detachment of the target molecule. Furthermore, by having the above structural formula, a molecular recognition site field where multiple molecular recognition sites are aggregated can be spontaneously formed near the interface between the semiconductor part 3 and the detection part 2.

[0039] More preferably, R １１ is an alkylene group having 1 to 5 carbon atoms.

[0040] More preferably, R １２ is an alkylene group having 1 to 5 carbon atoms.

[0041] For example, x1 is 0. In another example, x1 is 1.

[0042] For example, x2 is 0. In another example, x2 is 1.

[0043] For example, x1 is 0 and x2 is 1. In another example, x1 is 1 and x2 is 0.

[0044] More preferably, R ２１ is a methyl group or a methoxy group. ２１ may be a naphthalene group.

[0045] More preferably, R ２２ is a methyl group or a methoxy group. ２２ may be a naphthalene group.

[0046] For example, y1 is 0. That is, R ２１ does not exist and hydrogen atoms are bonded.

[0047] In another embodiment, y1 is 1. In another embodiment, y1 is 2. In another embodiment, y1 is 3. In another embodiment, y1 is 4.

[0048] y2 is, for example, 0. That is, R ２２ does not exist and hydrogen atoms are bonded.

[0049] In another embodiment, y2 is 1. In another embodiment, y2 is 2. In another embodiment, y2 is 3. In another embodiment, y2 is 4.

[0050] M ＋ represents a cation of a metal element. Examples of metals include copper, zinc, nickel, and mercury. M ＋ By changing M, various target molecules can be sensed. ＋ For example, M ＋ When is a copper ion, it can sense carboxylic acids and their derivatives.

[0051] In one embodiment, the detection unit 2 has a structure derived from cucurbit[n]uril. Cucurbit[n]uril is a compound represented by the following formula, which is a glycoluril (=C) linked by a methylene group. ４ H ２ N ４ O ２ =) monomer. The oxygen atoms are arranged along the edge of the ring band and tilt inward, forming a somewhat closed cavity. n corresponds to n2 in the following formula and is an integer between 5 and 14, e.g., 7.

[0052] In the structure derived from cucurbit[n]uril, the moiety contained in cucurbit[n]uril: (wherein * represents a bond), at least one H is O(CH ２ ) ｍ -CH ３ is replaced by -(CH ２ ) ｍ -CH ３ is a hydrocarbon chain R １ The above "H in at least one of the moieties" may be, for example, either one of two Hs contained in the moiety, or two Hs contained in the moiety, or one H contained in the moiety and one H contained in another moiety.

[0053] m is an integer of 2 to 39, preferably an integer of 5 to 23.

[0054] In one embodiment, n is 7 and m is 16.

[0055] The compound constituting the sensing unit 2 may be used together with a solvent when applied to the semiconductor unit. The solvent may be any solvent capable of dissolving the compound, and examples thereof include acetone, methyl ethyl ketone, methyl isobutyl ketone, diisobutyl ketone, and cyclohexanone. The concentration of the compound contained in the solvent is not particularly limited as long as it is capable of forming the sensing unit 2, and is, for example, 0.1 to 10 mM.

[0056] The detection unit 2 can be obtained by applying a compound that constitutes the detection unit 2. Examples of methods for applying the detection unit 2 include an artificial application method and a method using a general printing technique, such as a drop casting method, spin coating, inkjet printing, and screen printing.

[0057] The film thickness of the detection unit 2 is not particularly limited, but may be in the range of 6.4 to 2.3 nm, for example.

[0058] Preferably, the sensing unit 2 and the semiconductor unit 3 are self-organized. In other words, the sensing unit 2 and the semiconductor unit 3 are bonded to each other, and multiple bonded portions exist, each of which behaves autonomously. As a result, a large, ordered structure is created in the sensing unit 2 and the semiconductor unit 3.

[0059] In one embodiment, the sensitivity of the detection unit 2 is in the range of 0 to 20 ppm, specifically 0 to 15 ppm, of the concentration of the target molecule in the measurement environment. By adjusting the structure of the detection unit 2, the sensitivity to the target molecule can be adjusted, and for example, the upper and lower measurement limits can be changed.

[0060] In one embodiment, the sensitivity of the detection unit 2 is in the range of 0 to 1.0 ppm, specifically 0 to 0.9 ppm, of the concentration of target molecules in the measurement environment.

[0061] In one embodiment, the semiconductor portion 3 is a polymer organic material having a hydrocarbon chain R ２The polymer organic material includes a compound having the formula:

[0033] . By having the above-mentioned structure, the bonding between the semiconductor part 3 and the detection part 2 is improved. The polymer organic material is a high molecular weight organic material. It is preferable to use a soluble semiconductor material as the polymer organic material.

[0062] The polymer organic material is at least one selected from polythiophenes, polythienothiophenes, dithiophenes, benzothienobenzothiophenes, dinaphthothienothiophenes, polyacetylenes, polyfluorenes, polyphenylene vinylenes, polypyrroles, and polyanilines. ２ is attached to at least one of the atoms forming the ring structure.

[0063] Preferably, the semiconductor portion 3 is a polythiophene, specifically pBTTT shown in the following formula: ３１ , and / or R ３１ They interact with each other, causing π-π stacking between the main chain skeletons, which makes it possible to control the orientation of the semiconductor portion 3. Here, the main chain skeleton refers to the main chain of the polymer organic material.

[0064] R ３１ are each independently an alkyl group having 12 to 16 carbon atoms, and are preferably linear alkyl groups. For example, R ３１ Ga-C １２ H ２５ Poly[2,5-bis(3-dodecylthiophen-2-yl)thieno[3,2-b]thiophene], -C １４ H ２９ Poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene], -C １６ H ３３ Examples of suitable thiophene include poly[2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene].

[0065] n1 is, for example, 10 to 1,000, and specifically, 50 to 300.

[0066] In one embodiment, the semiconductor portion 3 is composed of a low-molecular-weight compound. Specifically, the low-molecular-weight compound is at least one selected from thienothiophenes, acenes, phenacenes, fullerenes, phthalocyanines, oligothiophenes, perylenes, and quinolinol complexes. ２ is bonded to at least one atom forming the ring structure. It is preferable to use a soluble low-molecular-weight compound.

[0067] For example, the semiconductor portion 3 includes thienothiophenes, which have a hydrocarbon chain R ２ Examples of thienothiophenes include endo-DNTT-PMI and exo-DNTT-PMI, which are obtained by introducing a thermally detachable substituent into dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT). Endo-DNTT-PMI is the compound on the left below, and exo-DNTT-PMI is the compound on the right below. Hydrocarbon chain R ２ is bonded to at least one of the atoms forming the ring structure of DNTT.

[0068] The semiconductor portion 3 can be obtained by applying a compound that constitutes the semiconductor portion 3. Examples of the application method include a coating method and a method using a general printing technique, such as a drop casting method, spin coating, inkjet printing, and screen printing.

[0069] The compound constituting the semiconductor portion 3 may be used together with a solvent. The solvent may be any solvent capable of dissolving the compound, and examples thereof include 1,2-dichlorobenzene, chlorobenzene, toluene, and benzene. The concentration of the compound contained in the solvent is not particularly limited as long as it is capable of forming the semiconductor portion 3, and is, for example, 0.001 to 0.05 wt %.

[0070] The thickness of the semiconductor portion 3 is not particularly limited, but may be in the range of 30 to 50 nm, for example.

[0071] Preferably, the semiconductor part 3 is covered with the layer of the detection part 2, and the layer of the detection part 2 also functions as a gas barrier layer that blocks moisture and oxygen. That is, the semiconductor part 3 is not exposed. According to this embodiment, the detection part 2, particularly the hydrocarbon chain R １ The layer formed by the above functions as a gas barrier layer that prevents moisture or oxygen from coming into contact with the semiconductor portion 3 .

[0072] Preferably, the sensor element 10 includes a transistor, and the semiconductor portion 3 is an active layer of the transistor. In the above-described embodiment, when the detection portion 2 recognizes a target molecule, an electrical signal of the semiconductor portion 3 fluctuates. The sensor element 10 may be a transistor.

[0073] Preferably, when the detection unit 2 recognizes a target molecule, the threshold voltage and mobility of the transistor change.

[0074] In one embodiment, M included in the detection unit 2 ＋ may be distributed in the surface direction of the semiconductor portion 3 on the side opposite to the detection portion 2 .

[0075] (Other Components) Commonly used components can be used as other components in the sensor element 10. These will be specifically described below, but the other components are not limited to the following descriptions.

[0076] The substrate 4 may be, for example, a glass substrate, a resin substrate, or a ceramic substrate. In one embodiment, the substrate 4 is a glass substrate. In one embodiment, the substrate 4 is a resin substrate. In one embodiment, the substrate 4 is a ceramic substrate.

[0077] The gate electrode 5 is provided on the substrate 4. Specifically, the gate electrode 5 has a bottom surface in contact with the substrate 4, a top surface opposite the bottom surface, and two end surfaces connecting the bottom surface and the top surface, and a dielectric portion 7 is provided so as to be in contact with the top surface of the gate electrode 5, and a bank portion 6 is provided so as to be in contact with the end surfaces. Note that the gate electrode 5 only needs to be large enough to allow a channel region (described later) to be formed in the semiconductor portion 3.

[0078] The gate electrode 5 is made of, for example, gold, silver, copper, aluminum, a transparent electrode film (ITO), carbon, a conductive polymer, or a conductive material containing these as its main component. The gate electrode 5 can be provided by, for example, vapor deposition. Alternatively, etching may be performed so that the gate electrode 5 is exposed.

[0079] The gate electrode 5 may have an oxide layer 51 (oxide film) on the surface opposite to the substrate 4. In this case, the dielectric portion 7 is provided so as to contact the oxide layer 51, and the bank portion 6 is provided so as to contact the end surface. By providing the oxide layer 51, the dielectric portion 7 is fixed, and the dielectric constant of the sensor element 10 can be increased.

[0080] The oxide layer 51 is obtained by performing a reactive ion etching process on the gate electrode 5. For example, if the gate electrode 5 is made of aluminum, the oxide layer 51 is obtained by performing a reactive ion etching process on the aluminum to form aluminum oxide.

[0081] The gate electrode 5 may be electrically connected to an external circuit, such as a readout circuit, outside the sensor element 10. In this case, a portion for drawing out wiring may be provided in the bank portion 6 in order to connect to the external circuit.

[0082] The dielectric portion 7 is provided on the gate electrode 5. The surface of the dielectric portion 7 opposite to the gate electrode 5 is in contact with the drain electrode 81, the source electrode 82, and the semiconductor portion 3. Although the dielectric portion 7 is provided in FIG. 1A , in another embodiment, the dielectric portion 7 does not have to be provided, and for example, the drain electrode 81 and the source electrode 82 may be provided on an oxide layer 51 (oxide film) on the gate electrode 5. In other words, no other layer exists between the oxide layer 51 and the drain electrode 81, or between the oxide layer 51 and the source electrode 82.

[0083] In FIG. 1A, the dielectric portion 7 is made of a dielectric material, for example, a hydrocarbon chain R ７２ Phosphonic acid R ７２ -P(=O)(OH) ２ The hydrocarbon chain R ７２ The number of carbon atoms in the hydrocarbon chain R is preferably 3 to 40, more preferably 14. ７２may have a linear or branched structure, and may have a functional group containing an oxygen atom or a nitrogen atom in the hydrocarbon chain.

[0084] Hydrocarbon chain R ７２ is preferably an alkyl group having 3 to 40 carbon atoms, more preferably an alkyl group having 3 to 40 carbon atoms and a straight-chain structure, and even more preferably an alkyl group having 14 carbon atoms and a straight-chain structure.

[0085] By providing the dielectric portion 7, an electric double layer with a high dielectric constant can be formed, and the sensor element 10 can be driven at a low voltage. Furthermore, the dielectric portion 7 and the semiconductor portion 3 interact with each other, and as a result, the semiconductor portion 3 can be fixed and the orientation of the semiconductor portion 3 can be improved. The dielectric portion 7, the semiconductor portion 3, and the detection portion 2 are each bonded to form a bonded portion, and the multiple bonded portions behave autonomously. As a result, a large structure with order is created in the dielectric portion 7, the semiconductor portion 3, and the detection portion 2. Furthermore, the inventors' investigations have surprisingly revealed that the M contained in the detection portion 2 ＋ It was found that the hydrocarbon chain R of the dielectric part 7 is distributed on the semiconductor part 3 side. It is considered that the detection part 2 interacts not only with the semiconductor part 3 but also with the dielectric part 7, and this is because the detection part 2 is fixed in the sensor element 10. That is, preferably, the hydrocarbon chain R of the dielectric part 7 ７２ is the hydrocarbon chain R of the semiconductor portion 3 ２ In addition, the hydrocarbon chain R of the detection unit 2 １ The detection part 2 can be immobilized on the dielectric part 7 by intermolecular interaction.

[0086] The dielectric portion 7 may be a monomolecular film formed on the gate electrode 5 .

[0087] The thickness of the dielectric portion 7 is not particularly limited, but is, for example, 1 to 3 nm.

[0088] The compound constituting the dielectric portion 7 may be used together with a solvent. The solvent may be any solvent capable of dissolving the compound, and examples thereof include ethanol, 2-propanol, and dimethyl sulfoxide.

[0089] The bank portion 6 is provided so as to contact the end surface of the dielectric portion 7 (the surface in contact with the upper surface of the dielectric portion 7) and the end surface of the gate electrode 5. The upper surface of the dielectric portion 7 (i.e., the surface opposite the substrate 4) and the upper surface of the bank portion 6 (i.e., the surface opposite the substrate 4) are formed flush with each other. Note that "flush" does not necessarily mean a completely flush surface, and may include unevenness or the like. The provision of the bank portion 6 improves insulation. Furthermore, the provision of the bank portion 6 can avoid influences from the surrounding environment (improving environmental resistance) and improves water repellency. The bank portion 6 can also prevent leakage of the composition used to form the dielectric portion 7. Note that in FIG. 1A , the dielectric portion 7 is provided over the entire top surface of the gate electrode 5, but the bank portion 6 may be provided on only a portion of the top surface of the gate electrode 5. Note that the upper surfaces of the bank portion 6 and the dielectric portion 7 do not need to be flush with each other. For example, the upper surface of the bank portion 6 may be above or below the upper surface of the dielectric portion 7 in the plane of the drawing. The height of the bank portion 6 in the Z direction may be greater or smaller than the height of the gate electrode 5 and the dielectric portion 7 in the Z direction.

[0090] 1A, the boundary between the bank portion 6 and the dielectric portion 7 may be flat or may have irregularities. Furthermore, the upper surfaces of the dielectric portion 7 and the bank portion 6 do not need to be completely flat, and may have some irregularities.

[0091] The bank portion 6 includes an insulating material, and may be made of, for example, a compound in which at least some of the hydrogen atoms of a hydrocarbon group have been converted to fluorine atoms, and may have a ring structure. The ring structure may have a heteroatom. The bank portion 6 is preferably made of a material that is liquid-repellent and insulating, and more preferably made of a material that has low dielectric properties. The bank portion 6 is made of, for example, a fluorine-containing polymer.

[0092] The drain electrode 81 is provided on the bank portion 6 and the dielectric portion 7. The semiconductor portion 3 is provided on the drain electrode 81. The drain electrode 81 is provided between the semiconductor portion 3 and the dielectric portion 7 and the bank portion 6. The drain electrode 81 is located on the surfaces of the dielectric portion 7 and the bank portion 6 opposite to the substrate 4, and the extending direction side of the first end surface is exposed. Note that the extending direction side of the first end surface of the drain electrode 81 does not have to be exposed, and may be in contact with the bank portion 6 and / or the semiconductor portion 3.

[0093] The drain electrode 81 is an electrode formed of, for example, gold, silver, copper, aluminum, a transparent electrode film, carbon, or a conductive polymer. A combination of these may also be used.

[0094] The source electrode 82 is provided on the bank portion 6 and the dielectric portion 7. The semiconductor portion 3 is provided on the source electrode 82. The source electrode 82 is provided between the semiconductor portion 3 and the dielectric portion 7 and the bank portion 6. The source electrode 82 is located on the surfaces of the dielectric portion 7 and the bank portion 6 opposite to the substrate 4, and the extending direction side of the second end surface is exposed. Note that the extending direction side of the second end surface of the source electrode 82 does not have to be exposed, and may be in contact with the bank portion 6 and / or the semiconductor portion 3.

[0095] The source electrode 82 is an electrode made of, for example, gold, silver, copper, aluminum, a transparent electrode film, carbon, or a conductive polymer. A combination of these may also be used.

[0096] The drain electrode 81 and the source electrode 82 are spaced apart from each other. The semiconductor portion 3 is located between the drain electrode 81 and the source electrode 82. As a result, when the detection portion 2 senses a target molecule, a current flows between the drain electrode 81 and the source electrode 82. Note that a compound other than the semiconductor portion 3 that can pass a current may be provided between the drain electrode 81 and the source electrode 82. Note that the semiconductor portion 3 is located on the drain electrode 81 and the source electrode 82.

[0097] The drain electrode 81 may be electrically connected to an external circuit, for example, a readout circuit, and the source electrode 82 may be electrically connected to an external circuit.

[0098] In FIG. 1A, the bank portion 6 and the dielectric portion 7 are in contact with the drain electrode 81 or the source electrode 82, but the present invention is not limited to this.

[0099] [Sensor Array] The sensor array may have two or more sensor elements 10. The two or more sensor elements 10 may be of one type or two or more types.

[0100] The semiconductor portions 3 of two or more sensor elements 10 included in the sensor array are made of the same material, and the molecular recognition sites as a whole include two or more types of molecular recognition sites.

[0101] In one embodiment, the semiconductor portions 3 of two or more sensor elements are made of the same material, and the molecular recognition sites of the two or more sensor elements are different from each other, thereby enabling sensing of a plurality of target molecules.

[0102] In one embodiment, the semiconductor portions 3 of two or more sensor elements are made of the same material, and one sensor element has two or more different molecular recognition sites, thereby enabling sensing of a plurality of target molecules.

[0103] [Method of Manufacturing Sensor Element 10] A method of manufacturing the sensor element 10 of the first embodiment is shown in Fig. 2. In the following manufacturing method, aluminum is used for the gate electrode 5, but other materials may also be used.

[0104] First, a substrate 4 is prepared. On the substrate 4, aluminum is provided as a gate electrode 5 by, for example, vapor deposition. The aluminum film has a thickness of, for example, 30 nm. Thereafter, the top surface of the gate electrode 5 is etched to form an aluminum oxide layer 51 (AlO ｘ , x is the valence number, and may be any number that allows aluminum oxide to be formed) is exposed.

[0105] Thereafter, a composition for forming the bank portions 6 is spin-coated so as to cover the aluminum oxide layer 51. That is, the surfaces of the gate electrode 5 other than the surface facing the substrate 4, i.e., the two end faces (first end face, second end face), the top face, the first side face perpendicular to the first end face and the top face, and the second side face opposite the first side face, are covered with the composition having the bank portions 6. At this time, if necessary, a heat treatment is performed, for example, at 90 to 130°C for 5 to 30 minutes. Next, the bank portions 6 on the top face of the gate electrode 5 are removed by etching, for example, ion etching, to expose the top face of the gate electrode 5 (aluminum oxide layer 51). That is, a recess (opening 61) where no bank portions 6 are present is provided on the aluminum oxide layer 51. A hydrocarbon chain R is then introduced into the opening 61, for example, at 20 to 30°C for 15 to 20 hours. ７２ A composition having a phosphonic acid having the formula: is added to provide the dielectric portion 7. The dielectric portion 7 is heat-treated, if necessary, at 100 to 120° C. for 10 to 60 minutes, for example.

[0106] Thereafter, the drain electrode 81 and the source electrode 82 are provided by vapor deposition on the bank portion 6 and the dielectric portion 7, respectively. The thickness of the drain electrode 81 and the source electrode 82 is, for example, 30 nm each. The detection layer 1 is provided so as to cover the drain electrode 81, the source electrode 82, and the dielectric portion 7 present between the drain electrode 81 and the source electrode 82. At this time, if necessary, a curing treatment is performed at 45 to 65°C for 1 to 10 minutes, for example. In this way, the sensor element 10 is manufactured.

[0107] In the above embodiment, when viewed from the thickness direction of the substrate 4, the region located above the gate electrode 5 and sandwiched between the drain electrode 81 and the source electrode 82 is defined as the channel region of the detection layer 1. In the channel region, the distance between the drain electrode 81 and the source electrode 82 (length in the X direction) is defined as the channel length, and the length in the direction perpendicular to the channel length (width in the Y direction) is defined as the channel width. The channel length is, for example, 50 μm, and the channel width is, for example, 1000 μm.

[0108] The method for producing the detection layer 1 will be described below. First, the hydrocarbon chain R ２ A semiconductor part 3 having the hydrocarbon chain R ２ On the surface of the semiconductor portion 3 having a molecular recognition site and a hydrocarbon chain R１ In this embodiment, a solution containing a sensing portion 2 having a hydrocarbon chain R is applied to the sensor element 10. This allows the sensor element 10 to selectively recognize molecules. The sensor element 10 can be easily replaced with another sensor element. １ and hydrocarbon chain R ２ The semiconductor part 3 is formed by the interaction between the two. This allows the semiconductor part 3 to be easily formed by simply applying the solution. After applying the detection part 2 and / or the semiconductor part 3, a heat treatment may be performed, for example, at 140 to 180°C for 5 to 30 minutes.

[0109] Preferably, the application of the detection unit 2 is carried out under normal pressure. That is, in this embodiment, a vacuum state is not required. This allows the molecular recognition site to be easily formed.

[0110] [Variation 1] A variation is shown in Figure 1B. In the first embodiment, the bank portion 6 is adjacent to the gate electrode 5 and the dielectric portion 7, but in this variation, the bank portion 6a is adjacent to the gate electrode 5a, the dielectric portion 7a, the drain electrode 81a, or the source electrode 82a. This difference will be explained below. The rest of the configuration is the same as in the first embodiment.

[0111] 1B, the gate electrode 5a is provided on the substrate 4. The gate electrode 5a may have an oxide layer 51 (oxide film) on the surface opposite to the substrate 4.

[0112] The dielectric portion 7a is provided on the gate electrode 5a. The surface of the dielectric portion 7a opposite to the gate electrode 5a is in contact with the drain electrode 81a, the source electrode 82a, and the semiconductor portion 3.

[0113] The drain electrode 81 a is provided on the dielectric portion 7 a. The source electrode 82 a is provided on the dielectric portion 7 a. A detection layer 1 is provided on the drain electrode 81 a, the source electrode 82 a, and in the space between the drain electrode 81 a and the source electrode 82 a.

[0114] The bank portion 6a is provided on the substrate 4. There are two banks 6a, one of which extends from the substrate 4 to the detection layer 1 along a first end face of the sensor element 10a, and the other bank portion 6a extends from the substrate 4 to the detection layer 1 along a second end face of the sensor element 10a. That is, the gate electrode 5a is located on the substrate 4, the dielectric portion 7a is located on the gate electrode 5a, and the drain electrode 81a and the source electrode 82a are located on the dielectric portion 7a. One of the banks 6a extends from the surface of the substrate 4 on the gate electrode 5a side to the detection layer 1 along the end faces of the gate electrode 5a, the dielectric portion 7a, and the drain electrode 81a, and the other extends from the surface of the substrate 4 on the gate electrode 5a side to the detection layer 1 along the end faces of the gate electrode 5a, the dielectric portion 7a, and the source electrode 82a. When viewed from the top surface of the drain electrode 81a, the bank portion 6a, the drain electrode 81a, the source electrode 82a, and the detection layer 1 (semiconductor portion 3) are provided in the space between the drain electrode 81a and the source electrode 82a. The provision of the bank portion 6a improves insulation. Furthermore, the provision of the bank portion 6a makes it possible to avoid influences from the surrounding environment (improving environmental resistance) and improves water repellency. Furthermore, the bank portion 6a prevents leakage of the composition used to form the dielectric portion 7a, the drain electrode 81a, and the source electrode 82a. The boundaries between the bank portion 6a and the gate electrode 5a, the dielectric portion 7a, and the drain electrode 81a may be flat or may have irregularities. The boundaries between the bank portion 6a and the gate electrode 5a, the dielectric portion 7a, and the source electrode 82a may be flat or may have irregularities.

[0115] The bank portion 6a and the drain electrode 81a are in contact with each other. The bank portion 6a and the source electrode 82a are in contact with each other. The bank portion 6a and the drain electrode 81a may be spaced apart, and the bank portion 6a and the source electrode 82a may be spaced apart. When spaced apart, a dielectric portion 7 may be present between the bank portion 6a and the drain electrode 81a and between the bank portion 6a and the source electrode 82a, and a detection layer 1 (for example, a semiconductor portion 3) may be present.

[0116] The upper surface of the bank portion 6a is flush with the upper surface of the drain electrode 81a. The upper surface of the bank portion 6a is flush with the upper surface of the source electrode 82a. Note that the upper surfaces of the bank portion 6a and the drain electrode 81a, and the upper surfaces of the bank portion 6a and the source electrode 82a are not flush with each other. For example, the upper surface of the bank portion 6a may be located above or below the upper surface of the drain electrode 81a or the upper surface of the source electrode 82a in the plane of the drawing. The height of the bank portion 6a in the Z direction may be greater or smaller than the height of the gate electrode 5a, the dielectric portion 7a, and the drain electrode 81a (or the source electrode 82a) in the Z direction.

[0117] The gate electrode 5 a, the drain electrode 81 a, and the source electrode 82 a may be electrically connected to an external circuit, for example, a circuit on the readout side. In this case, a portion for drawing out wiring may be provided in the bank portion 6 a to connect to the external circuit.

[0118] The sensor element 10a, gate electrode 5a, dielectric portion 7a, bank portion 6a, drain electrode 81a and source electrode 82a have the same configuration as the sensor element 10, gate electrode 5, dielectric portion 7, bank portion 6, drain electrode 81 and source electrode 82 of the first embodiment, except for their positional relationships.

[0119] (Manufacturing Method) A manufacturing method for the sensor element 10a of the first modified example will be described below. First, a substrate 4 is prepared. Aluminum is provided as a gate electrode 5a on the substrate 4, for example, by vapor deposition. Thereafter, the top surface of the gate electrode 5a is etched to expose the aluminum oxide layer 51. Thereafter, a composition for forming the bank portion 6a is spin-coated so as to cover the aluminum oxide layer 51. The bank portion 6a can be formed in the same manner as in the first embodiment. Next, the bank portion 6a on the top surface of the gate electrode 5a is etched to expose the top surface of the gate electrode 5a (aluminum oxide layer 51). That is, a recess (opening 61) where no bank portion 6a exists is provided on the aluminum oxide layer 51. A hydrocarbon chain R is inserted into the opening 61. ７２A composition containing a phosphonic acid having the formula (I) is added to form the dielectric portion 7a. Then, a drain electrode 81a and a source electrode 82a are formed on the dielectric portion 7a in the recess by vapor deposition. A detection layer 1 is formed to cover the drain electrode 81a, the source electrode 82a, and the dielectric portion 7a located between the drain electrode 81a and the source electrode 82a. That is, a part of the dielectric portion 7a, the drain electrode 81a, and the source electrode 82a are present within the opening 61. In this manner, the sensor element 10a is manufactured. The heating treatment and heating time for each component can be performed in the same manner as in the first embodiment.

[0120] [Variation 2] Another variation is shown in Figure 1C. In the first embodiment, the bank portion 6 is adjacent to the gate electrode 5 and the dielectric portion 7, but in this variation, the bank portion 6b is adjacent to the gate electrode 5b, the dielectric portion 7b, the drain electrode 81b or the source electrode 82b, and the detection layer 1b. This difference will be explained below. The rest of the configuration is the same as in the first embodiment.

[0121] 1C, the gate electrode 5b is provided on the substrate 4. The gate electrode 5b may have an oxide layer 51 (oxide film) on the surface opposite to the substrate 4.

[0122] The dielectric portion 7b is provided on the gate electrode 5b. The surface of the dielectric portion 7b opposite to the gate electrode 5b is in contact with the drain electrode 81b, the source electrode 82b, and the semiconductor portion 3b.

[0123] The drain electrode 81b is provided on the dielectric portion 7b. The source electrode 82b is provided on the dielectric portion 7b. A detection layer 1b is provided on the drain electrode 81b, the source electrode 82b, and in the space between the drain electrode 81a and the source electrode 82a.

[0124] The detection layer 1b is provided on the drain electrode 81b, the source electrode 82b, and the dielectric portion 7b located between the drain electrode 81b and the source electrode 82b. The detection layer 1b includes a detection portion 2b and a semiconductor portion 3b.

[0125] The bank portion 6b is provided on the substrate 4. There are two banks 6b. One bank portion 6b extends from the substrate 4 to the top surface of the sensor element 10b along a first end surface of the sensor element 10b, and the other bank portion 6b extends from the substrate 4 to the top surface of the sensor element 10b along a second end surface of the sensor element 10b. That is, the gate electrode 5b is located on the substrate 4, the dielectric portion 7b is located on the gate electrode 5b, the drain electrode 81b and the source electrode 82b are located on the dielectric portion 7b, and the detection layer 1b is located on the drain electrode 81b, the source electrode 82b, and the separation portion between the drain electrode 81b and the source electrode 82b. The bank portion 6b extends along the first end surface of the sensor element 10b from the surface of the substrate 4 facing the gate electrode 5b to the top surface of the sensor element 10b. The bank portion 6b extends along the second end surface of the sensor element 10b from the surface of the substrate 4 on the gate electrode 5b side to the top surface of the sensor element 10b. When viewed from the top surface of the sensor element 10b, the bank portion 6b is exposed. Providing the bank portion 6b improves insulation. Providing the bank portion 6b also makes it possible to avoid influences from the surrounding environment (improving environmental resistance) and improves water repellency. Furthermore, the bank portion 6b prevents leakage of the composition used to form the sensor element 10b. Providing the bank portion 6b also reduces the amount of material used to form the detection layer 1b, allowing the detection layer 1b to be formed with a minimum amount of material.

[0126] The upper surface of the bank portion 6c is flush with the upper surface of the detection layer 1b (detection portion 2b). Note that the upper surfaces of the bank portion 6c and the detection layer 1b do not have to be flush with each other. For example, the upper surface of the bank portion 6c may be located above or below the upper surface of the detection layer 1b in the plane of the drawing. The height of the bank portion 6 in the Z direction may be greater or smaller than the heights of the gate electrode 5b, the dielectric portion 7b, the drain electrode 81b (or the source electrode 82b), and the detection layer 1b in the Z direction.

[0127] The boundaries between the gate electrode 5b, the dielectric portion 7b, the drain electrode 81b, and the detection layer 1b and the bank portion 6b may be flat or may have irregularities. The boundaries between the gate electrode 5a, the dielectric portion 7a, the source electrode 82a, and the detection layer 1b and the bank portion 6a may be flat or may have irregularities.

[0128] The bank portion 6b and the drain electrode 81b are in contact with each other. The bank portion 6b and the source electrode 82b are in contact with each other. The bank portion 6b and the drain electrode 81b may be spaced apart, and the bank portion 6b and the source electrode 82b may be spaced apart. When they are spaced apart, a dielectric portion 7b may be present between the bank portion 6b and the drain electrode 81b, and between the bank portion 6b and the source electrode 82b, and a detection layer 1b (for example, a semiconductor portion 3b) may be present.

[0129] The gate electrode 5b, the drain electrode 81b, and the source electrode 82b may be electrically connected to an external circuit, for example, a circuit on the readout side. In this case, a portion for drawing out wiring may be provided in the bank portion 6b to connect to the external circuit.

[0130] The sensor element 10b, gate electrode 5b, dielectric portion 7b, bank portion 6b, drain electrode 81b, source electrode 82b, and detection layer 1b have the same configuration as the sensor element 10, gate electrode 5, dielectric portion 7, bank portion 6, drain electrode 81, source electrode 82, and detection layer 1 of the first embodiment, except for their positional relationships.

[0131] (Manufacturing Method) A manufacturing method for the sensor element 10b of Modified Example 2 will be described below. First, a substrate 4 is prepared. Aluminum is provided as the gate electrode 5b on the substrate 4, for example, by vapor deposition. Thereafter, the top surface of the gate electrode 5b is etched to expose the aluminum oxide layer 51. Thereafter, a composition for forming the bank portion 6b is spin-coated so as to cover the aluminum oxide layer 51. The bank portion 6b can be formed in the same manner as in the first embodiment. Next, the bank portion 6b on the top surface of the gate electrode 5b is etched to expose the top surface of the gate electrode 5b (aluminum oxide layer 51). That is, a recess (opening 61) where no bank portion 6b exists is provided on the aluminum oxide layer 51. A hydrocarbon chain R is inserted into the opening 61. ７２A composition containing a phosphonic acid having the formula (I) is added to form the dielectric portion 7b. Then, a drain electrode 81b and a source electrode 82b are formed on the dielectric portion 7b in the opening 61 by vapor deposition. Then, a detection layer 1b is formed in the opening 61. That is, the dielectric portion 7b, the drain electrode 81b, the source electrode 82b, and the detection layer 1b are present in the opening 61. In this manner, the sensor element 10b is manufactured. Note that the heating treatment and heating time for each component can be performed in the same manner as in the first embodiment.

[0132] [Variation 3] Fig. 1D shows yet another variation. In this variation, the positional relationship between the gate electrode 5b, the dielectric portion 7b, the drain electrode 81b or the source electrode 82b, and the detection layer 1b of the bank portion 6b is different from that of the dielectric portion 7b, the drain electrode 81c or the source electrode 82c, and the detection layer 1c in variation 2. Furthermore, while the top surface of the sensor element 10b in variation 2 is flush, in this variation the top surface of the bank portion 6c and the top surface of the detection layer 1c are spaced apart. This difference will be explained below. The rest of the configuration is the same as in the first embodiment.

[0133] 1D, a gate electrode 5c is provided on the substrate 4. The gate electrode 5c may have an oxide layer 51 (oxide film) on the surface opposite to the substrate 4.

[0134] The dielectric portion 7c is provided on a part of the gate electrode 5c. The width of the dielectric portion 7c in the X direction is smaller than the width of the gate electrode 5c in the X direction. The surface of the dielectric portion 7c opposite to the gate electrode 5c is in contact with the drain electrode 81, the source electrode 82, and the semiconductor portion 3.

[0135] The drain electrode 81c is provided on the dielectric portion 7c. The source electrode 82c is provided on the dielectric portion 7c. A detection layer 1c is provided on the drain electrode 81c, the source electrode 82c, and in the space between the drain electrode 81c and the source electrode 82c. The drain electrode 81c is separated from the bank portion 6c. The source electrode 82c is separated from the bank portion 6c. The drain electrode 81c may be in contact with the bank portion 6c, and the source electrode 82c may be in contact with the bank portion 6c.

[0136] The detection layer 1c is provided on the drain electrode 81c, the source electrode 82c, the dielectric portion 7c located between the drain electrode 81c and the bank portion 6c, the dielectric portion 7c located between the source electrode 82c and the bank portion 6c, and the dielectric portion 7c located between the drain electrode 81c and the source electrode 82c. The detection layer 1c includes a detection portion 2c and a semiconductor portion 3c.

[0137] The bank portion 6c is provided on the substrate 4. The bank portion 6c is provided in contact with the end surface of the gate electrode 5c, the top surface connected to the end surface, and the end surfaces of the dielectric portion 7c and the detection layer 1c. Specifically, there are two banks 6c, one on the left side of the paper and the other on the right side of the paper. The surface of the bank portion 6c opposite the substrate 4 is located above the top surface of the detection layer 1c. The height of the bank portion 6c in the Z direction is greater than the heights of the gate electrode 5c, the dielectric portion 7c, and the detection layer 1c in the Z direction. The provision of the bank portion 6c improves insulation. Furthermore, the provision of the bank portion 6c prevents influences from the surrounding environment (improving environmental resistance) and improves water repellency. Furthermore, the bank portion 6c prevents leakage of the composition used to form the sensor element 10c. The provision of the bank portion 6c reduces the amount of material used to form the detection layer 1c, allowing the detection layer 1c to be formed with minimal material. Furthermore, since the surface of the bank portion 6c opposite the substrate 4 is located above the top surface of the detection layer 1c, the detection layer 1c can be formed using a minimum amount of material. The boundaries between the bank portion 6c and the dielectric portion 7c, drain electrode 81c, and detection layer 1c may be flat or may have irregularities. The boundaries between the bank portion 6c and the dielectric portion 7c, source electrode 82c, and detection layer 1c may be flat or may have irregularities. The top surfaces of the bank portion 6c and the detection layer 1c may be flush with each other, or the top surface of the detection layer 1c may be located above the top surface of the bank portion 6c.

[0138] The gate electrode 5c may be electrically connected to an external circuit, for example, a readout circuit. In this case, a portion for drawing out wiring may be provided in the bank portion 6c to connect to the external circuit. The drain electrode 81c and the source electrode 82c may be electrically connected to an external circuit, for example, a readout circuit. In this case, a portion for drawing out wiring may be provided in the detection layer 1c and the bank portion 6c to connect to the external circuit.

[0139] (Manufacturing Method) A manufacturing method of the sensor element 10c of the third modified example will be described below. First, a substrate 4 is prepared. Aluminum is provided as a gate electrode 5c on the substrate 4, for example, by vapor deposition. Thereafter, the top surface of the gate electrode 5c is etched to expose the aluminum oxide layer 51. Thereafter, a composition for forming the bank portion 6c is spin-coated so as to cover the aluminum oxide layer 51. The bank portion 6c can be formed in the same manner as in the first embodiment. Next, the bank portion 6c on the top surface of the gate electrode 5c is etched to expose the top surface of the gate electrode 5c (aluminum oxide layer 51). That is, a recess (opening 61) where no bank portion 6c exists is provided on the aluminum oxide layer 51. A hydrocarbon chain R is inserted into the opening 61. ７２ A composition having a phosphonic acid having the formula (I) is added to form the dielectric portion 7c. Then, a drain electrode 81c and a source electrode 82c are formed on the dielectric portion 7c in the opening 61 by vapor deposition. Then, a detection layer 1c is formed in the opening 61. That is, the dielectric portion 7b, the drain electrode 81c, the source electrode 82c, and the detection layer 1c are present in the opening 61. As described above, the sensor element 10c is manufactured. Note that the heating treatment and heating time for each component can be performed in the same manner as in the first embodiment. In this way, the sensor element 10c is manufactured. Note that the heating treatment and heating time for each component can be performed in the same manner as in the first embodiment.

[0140] The sensor element of the present invention and the sensor array having the sensor element have been described in detail above. However, the applications, methods of use, and methods of manufacturing articles of the sensor element of the present invention and the sensor array having the sensor element are not limited to those exemplified above.

[0141] For example, in the first embodiment and modifications 1 to 3, the end faces of the gate electrodes are covered with the bank portions, but part of the gate electrodes may penetrate the bank portions and the end faces of the gate electrodes may protrude from the bank portions. That is, part of the gate electrodes may not contact the dielectric portion and the bank portions, and the end faces of the gate electrodes may be exposed.

[0142] The sensor element of the present invention will be described in more detail below with reference to examples, but the present invention is not limited to these examples.

[0143] Example 1 (Detection unit: synthesis of dipicolylamine derivative) 12 mL of acetonitrile was added to 1.30 g of 2-picolyl chloride hydrochloride, 0.730 g of 1-dodecylamine, and 4.31 g of sodium carbonate, and the mixture was heated and stirred. Dichloromethane was added to the resulting mixture, and insoluble matter was filtered off, and the solvent was evaporated. The resulting crude product was purified by column chromatography to obtain 0.685 g of (N,N-dipicolyl)-1-dodecylamine as a pale yellow oil in a yield of 47%.

[0144] Example 2 (Fabrication of Gas Sensor Element A) Aluminum was vapor-deposited on a glass substrate, and the aluminum surface was treated by a reactive etching process. The aluminum film had a thickness of 30 nm. Amorphous resin (CYTOP, product number CTL-809M, manufactured by AGC Inc.) was spin-coated on the upper surface of the aluminum, and heat-treated at 110°C for 10 minutes to form a bank portion. The upper surface of the aluminum was then exposed by a reactive etching process. Tetradecylphosphonic acid (TDPA) was applied to the exposed upper surface of the aluminum and vapor-deposited at 25°C for 16 hours, followed by heat-treatment at 110°C for 30 minutes to form a dielectric portion.

[0145] Thereafter, gold was vapor-deposited as the drain electrode and the source electrode. The thickness of the drain electrode and the source electrode was 30 nm. A film of PBTTT-C14, an organic semiconductor material, was formed to cover the drain electrode and the source electrode, and the film was heat-treated at 55°C to form a semiconductor part. A dipicolylamine derivative (Cu ＩＩ -dpa-C １６A 1 mM acetone solution of the compound was applied to form a film, thereby obtaining a gas sensor element A. The structures of the compounds used are shown below.

[0146] Example 3 (Test Procedure and Test Results) Using gas sensor element A, a detection test for isovaleric acid, which is one of the substances that cause body odor, was carried out according to the following procedure.

[0147] Fig. 3 is a schematic diagram showing the operation of Example 3. As shown in Fig. 3, a gas permeator 91, a glove box 92 connected to the gas permeator 91, a gas chromatograph mass spectrometer (GC-MS) 93 for monitoring the concentration of isovaleric acid gas in the glove box 92, and a source meter 94 for measuring the voltage and current of the glove box 92 are connected. The glove box 92 has an installation stand 92A.

[0148] First, the gas sensor element 10 was placed on the placement table 92A.

[0149] Next, in the gas permeator 91, isovaleric acid (CH ３ CH (CH ３ ) CH ２ The generated isovaleric acid gas was passed as a detection gas 95 through a glove box 92 connected to a gas permeator 91.

[0150] A GC-MS 93 connected to the glove box 92 was used to monitor the concentration of the detection gas 95 inside the glove box 92. In addition, a source meter 94 was used to measure the transfer characteristics (ID-VGS characteristics) of the transistor of the gas sensor element A relative to the concentration of the detection gas 95.

[0151] (GC-MS83 measurement conditions) Measurement device: (Manufacturer: JEOL, Model number: JMS-Q1500) Ion source temperature: 170°C Ionization energy: 70 eV Ionization current: 5 μA

[0152] FIG. 4A shows the concentration of isovaleric acid gas (ppm) on the horizontal axis and the rate of change in transistor threshold voltage (V ＴＨ -V ＴＨ０ ) / V ＴＨ０, which shows the results of threshold voltage changes obtained from the ID-VGS characteristics of the measured transistor. ＴＨ０ is the threshold voltage when isovaleric acid gas is not generated (isovaleric acid gas concentration 0 ppm), and V ＴＨ is the gate threshold voltage. ＴＨ -V ＴＨ０ ) / V ＴＨ０ 4A shows the amplitude of the drain-source voltage V ＤＳ was measured at -2V.

[0153] In FIG. 4B, the horizontal axis represents the source-gate voltage V ＧＳ (V), the vertical axis is the drain current I ＤＳ As shown by the dotted line in FIG. 4B, when the isovaleric acid gas is 0 ppm, V ＧＳ As the absolute value of I increases (i.e., as it approaches from 0 V to −3 V), ＤＳ As shown by the solid line in Figure 4B, at 0.83 ppm of isovaleric acid gas, the absolute value of V ＧＳ The larger the absolute value of I ＤＳ Although the absolute value of (μA) became higher, I ＤＳ The absolute value of (μA) was reduced compared to the case of 0 ppm.

[0154] The threshold voltage V ＴＨ , V ＴＨ０ As shown in FIG. 5, the horizontal axis represents the source-gate voltage V ＧＳ , the vertical axis is the drain current I ＤＳ The graph shows the square root of the source-gate voltage V ＧＳ As increases (i.e., moving from the left side to the right side of FIG. 5), the drain current I ＤＳ Specifically, the square root value of the drain current I ＤＳ The square root of the source-gate voltage V ＧＳ The linear portion (A) decreases almost linearly as the source-gate voltage V increases, and the curved portion (B) connects to the linear portion. ＧＳ At this time, the drain current I ＤＳThe extension line along the straight line of the square root of the drain current I ＤＳ The intersection point of the line extending from the straight line where the square root of the ＴＨ Let's say.

[0155] 4A, it was confirmed that the transistor threshold voltage changed depending on the concentration of the detection gas 95, and it was found that the gas sensor element A could detect the detection gas 95. As shown in FIG. 4B, it was found that the transfer characteristics of the transistor changed when the detection gas 95 was added.

[0156] [Example 4] Acetic acid (CH ３ The same procedure as in Example 3 was carried out except that methyl methyl ketone (C(═O)OH) was used.

[0157] [Example 5] Propionic acid (CH ３ CH ２ The same operation as in Example 3 was carried out except that a 1000-kJ / cm2 SiO2 (C(═O)OH) was used. The results are shown in Figures 6A and 6B. Figure 6A shows the drain-source voltage V ＤＳ was measured at −1 V. In FIG. 6B, the results for 0 ppm propionic acid are shown by a dotted line, and the results for 1.5 ppm are shown by a solid line.

[0158] [Example 6] Butyric acid (CH ) was used instead of isovaleric acid. ３ CH ２ CH ２ The measurement was performed in the same manner as in Example 3 using a ZnO (C(═O)OH) as the drain-source voltage V ＤＳ was measured at −2 V. In FIG. 7B, the results for 0 ppm butyric acid are shown by a dotted line, and the results for 1 ppm butyric acid are shown by a solid line.

[0159] [Example 7] Valeric acid (CH 3 ) was used instead of isovaleric acid. ３ CH ２ CH ２ CH ２ The measurement was performed in the same manner as in Example 3 using a ZnO (C(═O)OH) as the drain-source voltage V ＤＳwas measured at −2 V. In FIG. 8B, the results for 0 ppm valeric acid are shown by a dotted line, and the results for 0.83 ppm valeric acid are shown by a solid line.

[0160] [Example 8] Hexanoic acid (CH ３ CH ２ CH ２ CH ２ CH ２ The measurement was performed in the same manner as in Example 3 using a ZnO (C(═O)OH) as the drain-source voltage V ＤＳ was measured at −2 V. In FIG. 9B, the results for 0 ppm hexanoic acid are shown by a dotted line, and the results for 12.8 ppm hexanoic acid are shown by a solid line.

[0161] As shown in Examples 4 to 8, it was found that when other carboxylic acids were used, the transistor threshold voltage changed depending on the concentration of the carboxylic acid gas, and the transfer characteristics of the transistor also changed.

[0162] 10A to 10D show the evaluation results based on Examples 3 to 8. In Fig. 10A to 10D, a to f represent the following structures.

[0163]

[0164] FIG. 10A shows the change rate of the transistor threshold voltage (V) with respect to the compounds a to f (horizontal axis) when each of the compounds a to f is contained at 2 ppm. ＴＨ -V ＴＨ０ ) / V ＴＨ０ The vertical axis shows the value of V ＴＨ is the value when each of compounds a to f is contained at 2 ppm, and V ＴＨ０ is the value when compounds a to f are not included (0 ppm).

[0165] FIG. 10B shows the rate of change in mobility (μ-μ) with respect to compounds a to f (horizontal axis) when each compound a to f is contained at 2 ppm. ０ ) / μ ０ μ is the value when each of compounds a to f is contained at 2 ppm, and μ ０ is the value when compounds a to f are not included (0 ppm).

[0166] In addition, the mobilities μ and μ ０ was calculated based on the following formula: where W is the gate width, 1,000 μm, C is the gate capacitance, 7.10×10 －７ μF / cm ２ , L is the gate length, which is 50 μm. ＤＳ , V ＧＳ , V ＴＨ have the same meanings as above.

[0167] 10C and 10D show the change rate of drain current (I ＤＳ -I ＤＳ０ ) / I ＤＳ０ 10C shows the results of the rate of change of drain current at VGS=-2V when compounds a to f are contained at 2 ppm each, and FIG. 10D shows the results of the rate of change of drain current at VGS=-3V when compounds a to f are contained at 2 ppm each. ＤＳ is the value when each of compounds a to f is contained at 2 ppm, and I ＤＳ０ is the value when compounds a to f are not included (0 ppm).

[0168] As shown in FIGS. 10A to 10D, when the sensor element of the present invention is used, the transistor threshold voltage V ＴＨ , mobility μ, drain current I ＤＳ It was confirmed that the values ​​(relative values) of

[0169] Example 9 (Detection Unit: Synthesis of Cucurbit[7]uril) A mixed solution of formaldehyde (14 mL of a 37% aqueous solution, 182 mmol) and sulfuric acid (60 mL of a 9 M aqueous solution) was ice-cooled, and glycouril (2) (11.4 g, 80 mmol) was added to obtain a gel-like mixture. The gel-like mixture was then heated to 100°C and poured into ultrapure water. Acetone was added to precipitate cucurbit[n]uril oligomers and polymers. The mixture was then filtered and washed using a mixed solution of acetone and water, yielding a mixture containing powdered cucurbit[n]uril. The resulting mixture was added with ultrapure water and filtered to obtain cucurbit[6]uril. The filtrate was then treated with acetone to obtain a precipitate containing cucurbit[7]uril. The recovered precipitate was dissolved in a mixed solution of water and formic acid and purified using column chromatography to obtain 395 mg (24%) of cucurbit[7]uril (3). Cucurbit[7]uril (3) (500 mg, 0.43 mmol), ammonium persulfate (147.2 mg, 0.645 mmol), sodium bisulfite (67.1 mg, 0.645 mmol), and 60 mL of ultrapure water were added. The mixture was allowed to react under a nitrogen atmosphere at 65°C. The mixture was then concentrated using an evaporator to obtain a crude product. The resulting crude product was dissolved in a mixed solution of water and formic acid and purified using column chromatography to obtain 116 mg (23%) of cucurbit[7]-OH (4). Dimethyl sulfoxide (DMSO) was added to 23 mg of cucurbit[7]-OH (4), and the mixture was heated and stirred at 75°C. After cooling to room temperature, 40 mg of 60% sodium hydride was added, and the mixture was heated and stirred at 75°C. The mixture was then allowed to cool to room temperature, and 40 mg of 60% sodium hydride was added. After stirring at room temperature for 30 minutes, 460 mg of 1-iodohexadecane was added and reacted at room temperature. After the reaction was completed, the mixture was washed with diethyl ether and methanol. Next, the washings were removed by centrifugation, and the mixture was dried at room temperature to obtain a powdery product (1).

[0170] [Example 10] (Preparation of Gas Sensor Element B) Dipicolylamine Derivative (Cu ＩＩ -dpa-C １６The same procedure as in Example 2 was repeated, except that a 0.5 mM DMSO solution of cucurbit[7]uril was used instead of the 1 mM acetone solution. As a result, a gas sensor element B was obtained.

[0171] Examples 11 to 19 (Test Results Using Gas Sensor Element B) Detection tests were carried out in the same manner as in Example 3, except that gas sensor element B was used instead of gas sensor element A and compounds g to o (6 ppm each) were used instead of isovaleric acid.

[0172]

[0173] FIG. 11 shows the change rate of drain current (I ＤＳ -I ＤＳ０ ) / I ＤＳ０ The absolute value (vertical axis) of ＤＳ , I ＤＳ０ and I ＤＳ０ have the same meanings as above.

[0174] As shown in FIG. 11, when the sensor element of the present invention is used, the drain current I ＤＳ It was confirmed that the values ​​(relative values) of each compound were suppressed. In particular, a large response was observed to the aromatic compounds g to n. Furthermore, a large response was observed to the compounds l to n.

[0175] [Example 20] (Preparation of gas sensor element C) Dipicolylamine derivative (Cu ＩＩ -dpa-C １６ The same procedure as in Example 2 was carried out except that a hexane solution containing 1 mM hexadecylamine was used instead of the acetone solution containing 1 mM hexadecylamine. In this way, a gas sensor element C was obtained.

[0176] Example 21 (Test Results Using Gas Sensor Element C) A detection test was carried out in the same manner as in Example 3, except that gas sensor element C was used instead of gas sensor element A and compound p (acetaldehyde, 6 ppm) was used instead of isovaleric acid.

[0177] FIG. 12A shows the acetaldehyde concentration (ppm) on the horizontal axis and the rate of change in transistor threshold voltage (V ＴＨ -V ＴＨ０ ) / V ＴＨ０1 is a graph showing the results of threshold voltage changes obtained from the ID-VGS characteristics of the measured transistors. ＴＨ and V ＴＨ０ are the same as those described above. Also, FIG. 12A shows the drain-source voltage V ＤＳ was measured at -2V.

[0178] In FIG. 12B, the horizontal axis represents the source-gate voltage V ＧＳ (V), the vertical axis is the drain current I ＤＳ As shown by the dotted line in FIG. 12B, when acetaldehyde gas is 0 ppm, V ＧＳ As the absolute value of I increases (i.e., as it approaches from 0 V to −3 V), ＤＳ As shown by the solid line in FIG. 12B, at 12 ppm of acetaldehyde gas, the absolute value of V ＧＳ The larger the absolute value of I ＤＳ Although the absolute value of (μA) became higher, I ＤＳ The absolute value of (μA) was reduced compared to the case of 0 ppm.

[0179] Examples 22 to 25 (Test Results Using Gas Sensor Element C) Detection tests were carried out in the same manner as in Example 3, except that gas sensor element C was used instead of gas sensor element A and compounds q to o (6 ppm each) were used instead of isovaleric acid.

[0180]

[0181] FIG. 13 shows the change rate of drain current (I ＤＳ -I ＤＳ０ ) / I ＤＳ０ The absolute value (vertical axis) of ＤＳ , I ＤＳ０ and I ＤＳ０ have the same meanings as above.

[0182] As shown in FIG. 13, when the sensor element of the present invention is used, the drain current I ＤＳ It was confirmed that the values ​​(relative values) of

[0183] The sensor element of the present disclosure is highly sensitive and selective, enabling gas molecule sensing technology capable of non-separation multi-analyte analysis. For example, by installing the sensor element inside an indoor unit or remote control device of an air conditioning system including ventilation equipment, or inside an air purifier, the concentration of a target substance in a room can be sensed. Furthermore, by using the sensor element of the present disclosure, volatile organic compounds (VOCs) can be detected, and an indoor ventilation index can be established, thereby enabling energy-saving and safe ventilation based on real-time environmental information. Furthermore, by installing the sensor element of the present disclosure in an air purifier or the like, air quality can be monitored, thereby contributing to indoor purification. Furthermore, health status can be monitored by detecting gases emitted by people, etc.

[0184] 10, 10a, 10b, 10c Sensor element 1, 1b, 1c Detection layer 2, 2b, 2c Detection section 3, 3b, 3c Semiconductor section 4 Substrate 5, 5a, 5b, 5c Gate electrode 51 Oxide layer 6, 6a, 6b, 6c Bank section 61 Opening 7, 7a, 7b, 7c Dielectric section 81, 81a, 81b, 81c Drain electrode 82, 82a, 82b, 82c Source electrode 91 Gas permeator 92 Glove box 92A Installation stand 93 Gas chromatograph mass spectrometer 94 Source meter 95 Detected gas

Claims

1. A sensor element that selectively recognizes a molecule, comprising a molecular recognition site and a hydrocarbon chain R １ and a hydrocarbon chain R ２ and a semiconductor portion having a structure in which an electrical conduction characteristic of the semiconductor portion changes in response to attachment and detachment of the molecule in the detection portion.

2. The sensor element according to claim 1, wherein the molecule is an organic molecule in the atmosphere.

3. The detection unit is the hydrocarbon chain R １ wherein the hydrocarbon chain R １ and / or the hydrocarbon chain R ２ is immobilized on the semiconductor part by intermolecular interaction with the sensor element according to claim 1 or 2.

4. The hydrocarbon chain R １ is an alkyl group having 3 to 40 carbon atoms. The sensor element according to any one of claims 1 to 3.

5. The sensor element according to any one of claims 1 to 4, wherein the molecular recognition site interacts with a target molecule by intermolecular interaction.

6. The sensor element according to any one of claims 1 to 5, wherein the electrical conduction characteristics of the semiconductor part are changed by the reversible binding between the molecular recognition site and the target molecule.

7. The sensor element according to any one of claims 1 to 6, wherein the detection part is a nitrogen atom-containing group having an alkyl group with 3 to 40 carbon atoms.

8. The detection unit has a structure represented by the formula: and has a structure represented by the formula: R １ is an alkyl group having 3 to 40 carbon atoms, and R １１ is an alkylene group having 1 to 10 carbon atoms, and R １２ is an alkylene group having 1 to 10 carbon atoms, x1 is 0 or 1, x2 is 0 or 1, and R ２１ is an alkyl group having 1 to 3 carbon atoms or an alkoxyl group having 1 to 3 carbon atoms, and R ２２ is an alkyl group having 1 to 3 carbon atoms or an alkoxyl group having 1 to 3 carbon atoms, y1 is an integer of 0 to 4, y2 is an integer of 0 to 4, and M ＋ is a metal ion. The sensor element according to any one of claims 1 to 7.

9. The detection unit has a structure derived from cucurbit[n]uril, and the structure derived from cucurbit[n]uril is a part included in cucurbit[n]uril: (wherein * is a bond), and at least one of the Hs is replaced by O(CH ２ ) ｍ -CH ３ ; n is an integer from 5 to 14; m is an integer from 2 to 39. The sensor element according to any one of claims 1 to 7.

10. The detection unit is CH ３ -(CH ２ ) ｎａ -NH ２ where na is an integer from 1 to 20, and the sensor element according to any one of claims 1 to 7.

11. The sensor element according to any one of claims 1 to 10, wherein the semiconductor part is a polymer organic material.

12. The sensor element according to claim 11, wherein the polymer organic material is at least one selected from polythiophenes, polythienothiophenes, dithiophenes, benzothieno[3,2-b]benzothiophenes, dinaphtho[2,3-b:2',3'-d]thieno[3,2-b]thiophenes, polyacetylenes, polyfluorenes, polyphenylenevinylenes, polypyrroles, and polyanilines.

13. The sensor element according to any one of claims 1 to 12, wherein the semiconductor part is at least one selected from thienothiophenes, acenes, phenacenes, fullerenes, phthalocyanines, oligothiophenes, perylenes, and quinolinol complexes.

14. The sensor element according to any one of claims 1 to 13, wherein the semiconductor part is covered with the layer of the detection part, and the layer of the detection part functions as a gas barrier layer that blocks moisture and oxygen.

15. A gate electrode, a dielectric portion located on the gate electrode, a drain electrode and a source electrode which are located on the dielectric portion and isolated from each other, and a semiconductor portion located on the dielectric portion, the drain electrode and the source electrode, wherein the dielectric portion has a portion derived from a phosphonic acid having a hydrocarbon chain R having 3 to 40 carbon atoms ７２ The sensor element according to any one of claims 1 to 14, having a portion derived from a phosphonic acid having 16. The hydrocarbon chain R ７２ The sensor element according to claim 15, wherein the number of carbon atoms is 14.

17. The hydrocarbon chain R ７２ interacts with the hydrocarbon chain R １ to immobilize the detection unit on the phosphonic acid. The sensor element according to claim 15 or 16 18. The sensor element according to any one of claims 15 to 17, wherein the detection part, the semiconductor part, and the dielectric part are self-organized.

19. The sensor element according to any one of claims 1 to 18, wherein the sensor element includes a transistor, and the semiconductor part is the active layer of the transistor.

20. The sensor element according to claim 19, wherein the threshold voltage and mobility of the transistor change by recognizing a target molecule.

21. A sensor array having two or more sensor elements according to any one of claims 1 to 20, wherein the semiconductor parts of the two or more sensor elements are composed of the same material and include two or more types of molecular recognition sites.

22. Hydrocarbon chain R ２ A solution containing a detection portion having a molecular recognition site and a hydrocarbon chain R １ in the same molecule is applied to the surface of a semiconductor portion having the same, a method for manufacturing a sensor element that selectively recognizes molecules.

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