Wafer processing method and wafer processing apparatus

Abstract

An embodiment of the present application provides a wafer processing method, comprising: rotating a wafer; by means of a nozzle, supplying a processing liquid to the center of rotation of the wafer, so that a localized liquid film is formed on the surface of the wafer; and before the localized liquid film is diffused to the edge of the wafer, moving the nozzle and continuously supplying the processing liquid, so that a liquid landing point of the processing liquid moves from the center of rotation of the wafer to a first position. The wafer processing method of the present application can reduce liquid splashing.

Description

Wafer processing method and wafer processing device Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a wafer processing method and a wafer processing device. Background Art

[0002] In integrated circuit manufacturing, wafer processing equipment is required for etching, cleaning and other process treatments on wafers. Existing wafer processing equipment mainly performs process treatment by placing the wafer on a chuck and spraying a processing liquid onto the surface of the wafer while rotating the wafer. Specifically, as shown in Figure 1, the wafer processing equipment includes a chuck 2 for carrying a wafer 1, a drive 3 for driving the chuck 2 to rotate, and a nozzle 4 for supplying a processing liquid. During the process of processing the wafer 1, the nozzle 4 sprays the processing liquid onto the wafer 1, and the drive 3 drives the chuck 2 to rotate.

[0003] Since there is a height difference between the nozzle 4 and the wafer 1 when the nozzle 4 supplies the processing liquid to the wafer 1, under the action of gravity, the processing liquid usually hits the wafer 1 at a certain speed, which not only easily causes the processing liquid to splash, but also has a certain impact on the processing of the wafer 1 and the chamber environment. In severe cases, the impact of the processing liquid on the wafer 1 may cause defects in the wafer 1. Summary of the Invention

[0004] The embodiments of the present application provide a wafer processing method and a wafer processing device, which can reduce the problem of splashing of processing liquid.

[0005] On the one hand, the present application provides a wafer processing method, comprising rotating a wafer; supplying a processing liquid to the rotation center of the wafer through a nozzle to form a local liquid film on the surface of the wafer; before the local liquid film diffuses to the edge of the wafer, moving the nozzle and continuously supplying the processing liquid to move the landing point of the processing liquid from the rotation center of the wafer to a first position.

[0006] Specifically, the nozzle is moved before the local liquid film spreads to the first position.

[0007] Specifically, the nozzle is moved when the local liquid film diffuses to the second position so that when the liquid landing point reaches the first position, the distance between the local liquid film and the wafer rotation center is greater than or equal to the distance between the first position and the wafer rotation center, and the second position is between the wafer rotation center and the first position.

[0008] Specifically, the nozzle continuously supplies the treatment liquid.

[0009] Specifically, the nozzle supplies the processing liquid to the rotation center of the wafer for a preset time, so that the local liquid film spreads to the second position when the nozzle starts to move.

[0010] Specifically, the method further includes: obtaining the time t1 when the liquid point moves from the wafer rotation center to the first position and the time t2 when the local liquid film diffuses from the wafer rotation center to the first position, and the preset time t=t2-t1.

[0011] Specifically, the method also includes: obtaining the amount of processing liquid required when the local liquid film covers the second position, and when the amount of processing liquid required when the local liquid film covers the second position is supplied at the rotation center of the wafer, the nozzle stops supplying the processing liquid.

[0012] Specifically, the wafer processing method further includes: after the liquid landing point reaches the first position, reciprocatingly moving the nozzle between the wafer rotation center and the first position.

[0013] Specifically, a speed at which the liquid landing point moves from the rotation center to the first position is less than a speed at which the liquid landing point moves from the first position to the rotation center.

[0014] Specifically, the speed of the liquid landing point gradually decreases when it moves from the rotation center to the first position; and the speed of the liquid landing point gradually increases when it moves from the first position to the rotation center.

[0015] Specifically, the wafer processing method also includes: when the liquid landing point reaches the first position, moving the nozzle so that the liquid landing point moves from the first position to the third position, and moving the nozzle back and forth between the first position and the third position, and the third position is symmetrical with the first position about the rotation center of the wafer.

[0016] The wafer processing method of the present application forms a local liquid film on the wafer surface before the nozzle moves, and moves the nozzle before the local liquid film diffuses to the edge of the wafer, so that at least part of the processing liquid sprayed from the nozzle falls on the local liquid film. While reducing the splash of the processing liquid, it can also reduce the overlapping time of the processing liquid at the center of wafer rotation, so that the wafer can be processed evenly.

[0017] On the other hand, the present application provides a wafer processing device, comprising: a controller; a rotating unit, electrically connected to the controller, for rotating the wafer; a supply unit, electrically connected to the controller and comprising a nozzle, for supplying processing liquid to the rotation center of the wafer through the nozzle under the control of the controller, so that a local liquid film is formed on the surface of the wafer; a moving unit, electrically connected to the controller and connected to the nozzle, for, under the control of the controller, before the local liquid film diffuses to the edge of the wafer, moving the nozzle and continuously supplying the processing liquid, so that the landing point of the processing liquid moves from the rotation center of the wafer to the first position.

[0018] Other features and advantages of the present application will become apparent from the following detailed description, or may be learned in part by practice of the present application.

[0019] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application.

[0020] Summary of the Figures

[0021] The accompanying drawings are incorporated into and constitute a part of the specification, illustrating embodiments consistent with the present application and, together with the specification, explaining the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application, and those skilled in the art can derive other drawings based on these drawings without inventive effort. In the drawings:

[0022] FIG1 shows a schematic structural diagram of a wafer processing device according to an embodiment of the present application;

[0023] FIG2 schematically shows a flow chart of a wafer processing method according to an embodiment of the present application;

[0024] FIG3 schematically shows a nozzle movement diagram according to an embodiment of the present application;

[0025] FIG4 schematically shows a flow chart of a wafer processing method according to an embodiment of the present application;

[0026] FIG5 schematically shows a schematic diagram of nozzle movement in an embodiment of the present application;

[0027] FIG6 schematically shows a block diagram of a wafer processing apparatus according to an embodiment of the present application.

[0028] Preferred embodiments of the present invention

[0029] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this application will be thorough and complete and will fully convey the concepts of the example embodiments to those skilled in the art.

[0030] In addition, described feature, structure or characteristic can be combined in one or more embodiments in any suitable manner.In the following description, many specific details are provided so as to provide a full understanding of the embodiments of the present application. However, it will be appreciated by those skilled in the art that the technical scheme of the present application can be put into practice without one or more of the specific details, or other methods, components, devices, steps etc. can be adopted. In other cases, known methods, devices, implementations or operations are not shown or described in detail to avoid blurring the various aspects of the application.

[0031] Please refer to Figures 2 to 5. The present application provides a wafer processing method that can be performed by the wafer processing equipment shown in Figure 1. Here, the processing liquid can be a liquid used in a wet processing process such as a cleaning liquid and an etching liquid. For example, the processing liquid can be hydrofluoric acid (HF), a mixed acid of sulfuric acid and hydrogen peroxide (SPM), a dilute sulfuric acid peroxide (DSP), an ammonia-hydrogen peroxide water mixture (SC1), high-purity phosphoric acid (H3PO4), etc. The wafer processing method of the present application can reduce the problem of splashing of the processing liquid during the wet processing of wafer 1.

[0032] As shown in FIG2 , the wafer processing method provided in the embodiment of the present application includes the following steps:

[0033] S110 : The wafer 1 is rotated, and the processing liquid is supplied to the rotation center of the wafer through the nozzle 4 , so that a local liquid film is formed on the surface of the wafer 1 .

[0034] The wafer 1 is placed on the chuck 2 of the wafer processing equipment. The wafer 1 rotates horizontally around the vertical axis on the chuck 2, with the center of the wafer serving as the center of rotation of the wafer. The nozzle 4 is aligned with the center of rotation of the wafer while supplying the processing liquid so that the landing point of the processing liquid from the nozzle 4 falls on the center of rotation of the wafer. Under the action of the centrifugal force generated by the rotation of the wafer 1, the processing liquid will diffuse from the center of rotation to the edge of the wafer on the wafer 1, so that the processing liquid reaches a position closer to the edge of the wafer than the center of rotation of the wafer, thereby forming a local liquid film. The area of ​​the local liquid film is larger than the area of ​​the droplet formed on the wafer 1 by the landing point of the nozzle 4 during the movement of the nozzle 4, so that the landing point is located in the local liquid film during the movement of the nozzle 4. Compared with the landing point being directly on the solid wafer 1, the splash of processing liquid caused by the impact of the processing liquid on the wafer 1 can be reduced. Among them, the landing point of the nozzle 4 is the position where the processing liquid from the nozzle 4 falls on the wafer 1. 3 or 5 , the nozzle 4 moves from the wafer rotation center to a direction away from the wafer rotation center, and then moves back and forth within a certain range from the wafer rotation center.

[0035] S120 : Before the local liquid film spreads to the edge of the wafer, the nozzle 4 is moved and the processing liquid is continuously supplied, so that the landing point of the processing liquid moves from the rotation center of the wafer to the first position 5 .

[0036] After nozzle 4 supplies treatment liquid for a preset time at the wafer's rotational center, nozzle 4 moves. Specifically, nozzle 4 remains at the wafer's rotational center and supplies treatment liquid for a preset time. The preset time is greater than the time it takes for nozzle 4 to pass through various locations on wafer 1 during its movement, allowing a localized liquid film to form at the wafer's rotational center. Simultaneously, the preset time is less than the time it takes for the localized liquid film to diffuse to the wafer's edge. By controlling the supply time, the conditions for moving nozzle 4 are determined, ensuring that nozzle 4 moves before the localized liquid film diffuses to the wafer's edge. Nozzle 4 continuously supplies treatment liquid during the formation of the localized liquid film, between the formation of the localized liquid film and the movement of nozzle 4, and throughout the movement of nozzle 4. The time it takes for the localized liquid film to diffuse to the wafer's edge is determined through pre-testing, using the same conditions as those used during actual wafer 1 processing. Multiple tests using the same conditions can be used and the average value taken. The time it takes for nozzle 4 to pass through various locations on wafer 1 during its movement is set based on processing requirements. Conditions such as the flow rate of treatment liquid supplied, the type of treatment liquid, and the height of nozzle 4 when nozzle 4 is stationary and when nozzle 4 is moving are set as needed, and all other conditions except the speed of nozzle 4 movement can be the same. During the movement of the nozzle 4, the moving speed of the liquid landing point is faster than the spreading speed of the local liquid film.

[0037] In one embodiment of the present application, after the nozzle 4 supplies a predetermined amount of processing liquid at the center of rotation of the wafer, the nozzle 4 is moved. The predetermined amount is greater than the amount of droplets of the processing liquid landing points when the nozzle 4 passes through various positions on the wafer 1 during the movement, so that a local liquid film is formed at the center of rotation of the wafer. At the same time, the predetermined amount is less than the processing amount required for the local liquid film to diffuse to the edge of the wafer, so as to determine the conditions for moving the nozzle 4 by controlling the supply amount, so that the nozzle 4 moves before the local liquid film diffuses to the edge of the wafer. The nozzle 4 continues to supply the processing liquid during the process of forming the local liquid film and moving the nozzle 4, and stops supplying the processing liquid after the local liquid film is formed and before the nozzle 4 is moved. Among them, the amount of processing liquid required for the local liquid film to diffuse to the edge of the wafer is obtained through pre-testing, and the conditions of the pre-test are the same as the conditions when the wafer 1 is actually processed. The same conditions can be used to test multiple times and take the average.

[0038] The wafer processing apparatus also includes a housing, within which the chuck 2 and nozzle 4 are disposed. A first position 5 is located between the wafer's rotational center and the wafer's edge, and is determined relative to the housing. Therefore, the positional relationship between the first position 5 and the nozzle 4 does not change as the wafer 1 rotates. The first position 5 is determined based on processing requirements and the likelihood of process fluid splashing. The first position 5 can be 10-70 mm from the wafer's rotational center, preferably 20-40 mm, and can be, for example, 25 mm, 30 mm, or 35 mm.

[0039] In one embodiment of the present application, the movement speed of the nozzle 4 can be uniform. In one embodiment of the present application, the movement speed of the nozzle 4 can also be variable. For example, the speed can be gradually reduced from the center of rotation of the wafer to the first position 5. The closer to the edge of the wafer, the more obvious the splashing of the processing liquid under the action of centrifugal force. The inventors have found that the faster the movement speed of the nozzle 4, the more obvious the splashing of the processing liquid. Therefore, appropriately reducing the movement speed of the nozzle 4 at a position closer to the edge of the wafer can reduce the splashing of the processing liquid.

[0040] Moving the nozzle 4 before the local liquid film diffuses to the edge of the wafer, compared to moving the nozzle 4 after the local liquid film fully covers the wafer 1, can reduce the splashing of the processing liquid while forming the local liquid film, and at the same time reduce the time or amount of the processing liquid supplied at the rotation center of the wafer during the formation of the local liquid film, thereby making the time or amount of the processing liquid at the rotation center of the wafer closer to other positions on the wafer 1, thereby increasing the uniformity of the processing of the wafer 1.

[0041] Furthermore, the nozzle 4 is moved before the local liquid film diffuses to the first position 5 to further reduce the time or amount of processing liquid at the center position of wafer rotation, thereby increasing the uniformity of wafer 1 processing.

[0042] Furthermore, when the local liquid film diffuses to the second position 6, the nozzle 4 is moved so that when the liquid landing point reaches the first position 5, the distance between the local liquid film and the wafer rotation center is equal to the distance between the first position 5 and the wafer rotation center. This allows the local liquid film and the liquid landing point to reach the first position 5 simultaneously, and the liquid landing point moves faster than the diffusion speed of the local liquid film. During the process of the liquid landing point moving from the wafer rotation center to the first position 5, the position of the local liquid film is always ahead of the liquid landing point, that is, the liquid landing point always moves within the local liquid film, which can further reduce splashing of the processing liquid. Among them, the second position 6 is between the wafer rotation center and the first position 5. The second position 6 is on the movement trajectory of the nozzle 4 from the first position 5 to the second position 6. The second position 6 is a position determined with reference to the housing. The positional relationship between the first position 5 and the nozzle 4 does not change as the wafer 1 rotates. In one embodiment of the present application, the nozzle 4 is moved when the local liquid film diffuses to the second position 6, so that when the landing point reaches the first position 5, the distance between the local liquid film and the wafer rotation center is greater than the distance between the first position 5 and the wafer rotation center, so that the local liquid film reaches the first position 5 before the landing point, and the landing point can also be kept moving within the local liquid film, which can further reduce the splashing of the processing liquid.

[0043] Specifically, the nozzle 4 supplies the processing liquid to the wafer rotation center for a preset time, so that the local liquid film diffuses to the second position 6 when the nozzle 4 starts to move. Specifically, the time t1 for the liquid point to move from the wafer rotation center to the first position 5 and the time t2 for the local liquid film to diffuse from the wafer rotation center to the first position 5 are obtained, and the preset time t=t2-t1. The time for the liquid point to move from the wafer rotation center to the first position 5 is obtained by calculation or pre-testing, and the time for the local liquid film to diffuse to the first position 5 is obtained by pre-testing. The pre-test conditions are the same as the conditions when the wafer 1 is actually processed. The same conditions can be used to test multiple times and then take the average. For example, when the time for the liquid point to move from the wafer rotation center to the first position 5 is obtained by calculation, if the nozzle 4 moves at a constant speed, the time for the liquid point to move from the wafer rotation center to the first position 5 is the quotient obtained by dividing the distance between the wafer rotation center and the first position 5 by the speed of the nozzle 4.

[0044] Table 1 records the splashing of the processing liquid when the processing liquid is DSP, the movement speed of the nozzle 4 is a uniform 100 m / s, the first position 5 is 70 mm away from the rotation center of the wafer, the preset times are 1s, 3s, 5s, and 7s, and the time for the local liquid film to diffuse from the rotation center of the wafer to the first position 5 is 2.3s. The wafer 1 is treated with the processing liquid for 3 hours. It can be seen that a good splashing situation can be obtained when the preset time is 3s.

[0045] Table 1

[0046] In one embodiment of the present application, the amount of processing liquid required for the localized liquid film to cover second position 6 is determined. The amount of processing liquid required for the localized liquid film to cover second position 6 is supplied at the wafer rotation center, and nozzle 4 stops supplying processing liquid. The amount of processing liquid required for the localized liquid film to spread to second position 6 is determined through pre-testing. The pre-test conditions are the same as those used during actual wafer 1 processing. Multiple tests using the same conditions can be used to obtain an average value.

[0047] 2 , S130 : when the liquid landing point reaches the first position 5 , the nozzle 4 is reciprocated between the wafer rotation center and the first position 5 .

[0048] FIG3 schematically illustrates the reciprocating movement of nozzle 4 between the wafer rotation center and first position 5. Nozzle 4 can reciprocate between the wafer rotation center and first position 5 at a constant speed. Nozzle 4 reciprocates between the wafer rotation center and first position 5 until the required thickness of the processing liquid on wafer 1 is met, processing of wafer 1 is complete, or other conditions are met.

[0049] Table 2 records the splashing of the processing liquid when the wafer 1 is treated with the processing liquid for 3 hours, when the processing liquid is DSP, the movement speed of the nozzle 4 is 100m / s, the certain time for the nozzle 4 to spray the processing liquid toward the wafer rotation center of the wafer 1 is 1s, and the first position 5 is 40mm, 30mm and 20mm away from the wafer rotation center respectively. It can be seen that when the nozzle 4 moves back and forth between the wafer rotation center and the first position 5, the splashing of the processing liquid is good.

[0050] Table 2

[0051] In one embodiment of the present application, the nozzle 4 can move at a variable speed when moving back and forth between the wafer rotation center and the first position 5, and the speed can gradually decrease from the wafer rotation center to the first position 5, and gradually increase from the first position 5 to the wafer rotation center. The closer to the edge of the wafer, the more obvious the splashing of the processing liquid under the action of centrifugal force. The inventors found that the faster the movement speed of the nozzle 4, the more obvious the splashing of the processing liquid. Therefore, appropriately reducing the movement speed of the nozzle 4 at a position closer to the edge of the wafer can reduce the splashing of the processing liquid.

[0052] In one embodiment of the present application, when the nozzle 4 is moved back and forth at a variable speed between the wafer rotation center and the first position 5, the speed at which the nozzle 4 moves from the wafer rotation center to the first position 5 may be less than the speed at which the nozzle 4 moves from the wafer rotation center to the first position 5, that is, the speed at which the nozzle 4 moves from the wafer rotation center to a position away from the rotation center is less than the speed at which the nozzle 4 moves from a position away from the rotation center to the wafer rotation center. Due to the action of centrifugal force, the processing liquid on the wafer 1 always diffuses outward. When the nozzle 4 moves from the wafer rotation center to the wafer edge, the liquid superposition is greater than when the nozzle 4 moves from the wafer edge to the wafer rotation center, and the liquid splashing is more serious. The inventors have found that the faster the nozzle 4 moves, the more obvious the splashing. Therefore, when the speed at which the nozzle 4 moves from the wafer rotation center to the first position 5 is less than the speed at which the nozzle 4 moves from the first position 5 to the wafer rotation center, liquid splashing can be reduced.

[0053] In one implementation of an embodiment of the present application, as shown in Figure 4, after step S120, step S140 may also be included: when the landing point reaches the first position 5, the nozzle 4 is moved to move the landing point from the first position 5 to the third position 7, and the nozzle 4 is moved back and forth between the first position 5 and the third position 7. The third position 7 is symmetrical with the first position 5 about the center of rotation of the wafer in the housing.

[0054] The wafer processing method of Figure 4 can further reduce the overlap time of the processing liquid's landing positions. Figure 5 schematically illustrates the reciprocating movement of nozzle 4 between first position 5 and third position 7. Nozzle 4 can reciprocate between first position 5 and third position 7 at a constant speed. Nozzle 4 reciprocates between first position 5 and third position 7 until the thickness of the processing liquid on wafer 1 meets the required level, processing of wafer 1 is complete, or other conditions are met.

[0055] In one embodiment of the present application, the nozzle 4 can be moved at a variable speed when moving back and forth between the first position 5 and the third position 7. For example, in step S140, the speed at which the nozzle 4 moves from the wafer rotation center to the first position 5 is less than the speed at which the nozzle 4 moves from the wafer rotation center to the third position 7 is less than the speed at which the nozzle 4 moves from the wafer rotation center to the third position 7 is less than the speed at which the nozzle 4 moves from the wafer rotation center to the third position 7, that is, the speed at which the nozzle 4 moves from the wafer rotation center to a position away from the wafer rotation center is less than the speed at which the nozzle 4 moves from the wafer rotation center to a position away from the wafer rotation center, so as to reduce liquid splashing.

[0056] In one embodiment of the present application, the movement speed of the nozzle 4 can be variable. For example, the speed can gradually decrease from the wafer rotation center to the first position 5, and gradually increase from the first position 5 to the wafer rotation center; the speed can gradually decrease from the wafer rotation center to the third position, and gradually decrease from the third position to the wafer rotation center, thereby reducing splashing of the processing liquid.

[0057] FIG6 shows a block diagram of a wafer processing apparatus according to an embodiment of the present application, which may be provided in a wafer processing device.

[0058] 6 , a wafer processing device 600 according to an embodiment of the present application includes a controller 601 , a rotating unit 602 , a supply unit 603 and a moving unit 604 , wherein the rotating unit 602 , the supply unit 603 and the moving unit 604 are all electrically connected to the controller 601 .

[0059] Among them, the rotation unit 602 is used to rotate the wafer 1 under the control of the controller 601; the supply unit 603 includes the aforementioned nozzle 4, which is used to supply the processing liquid to the rotation center of the wafer 1 through the nozzle 4 under the control of the controller 601, so that a local liquid film is formed on the surface of the wafer 1; the moving unit 604 is connected to the nozzle 4, and is used to move the nozzle 4 and continuously supply the processing liquid before the local liquid film diffuses to the edge of the wafer under the control of the controller 601, so that the landing point of the processing liquid moves from the rotation center of the wafer 1 to the first position 5.

[0060] Specifically, based on the above solution, the moving unit 604 is further configured to: move the nozzle 4 before the local liquid film diffuses to the first position 5 .

[0061] Specifically, based on the above-mentioned scheme, the moving unit 604 is also configured to: move the nozzle 4 when the local liquid film diffuses to the second position 6, so that when the liquid landing point reaches the first position 5, the distance between the local liquid film and the rotation center of the wafer 1 is greater than or equal to the distance between the first position 5 and the rotation center of the wafer 1, and the second position 6 is between the rotation center of the wafer 1 and the first position 5.

[0062] Specifically, based on the above solution, the supply unit 603 is further configured to: continuously supply the treatment liquid through the nozzle 4 .

[0063] Specifically, based on the above solution, the supply unit 603 is further configured to supply the processing liquid to the rotation center of the wafer 1 for a preset time through the nozzle 4, so that the local liquid film spreads to the second position 6 when the nozzle 4 starts to move.

[0064] Specifically, the controller 601 is further configured to obtain the time t1 when the liquid landing point moves from the rotation center of the wafer 1 to the first position 5 and the time t2 when the local liquid film diffuses from the rotation center of the wafer 1 to the first position 5, and the preset time t=t2-t1.

[0065] Specifically, the controller 601 is further configured to obtain the amount of processing liquid required for the partial liquid film to cover the second position 6 and notify the supply unit 603. The supply unit 603 is further configured to stop supplying the processing liquid through the nozzle 4 when the amount of processing liquid required for the partial liquid film to cover the second position 6 is supplied at the rotation center of the wafer 1.

[0066] Specifically, the moving unit 604 is further configured to move the nozzle 4 back and forth between the rotation center of the wafer 1 and the first position 5 after the liquid landing point reaches the first position 5. The controller 601 may notify the moving unit 604 of the time when the liquid landing point reaches the first position 5.

[0067] Specifically, the moving unit 604 is further configured to make the speed at which the landing point moves from the rotation center to the first position 5 smaller than the speed at which the landing point moves from the first position 5 to the rotation center.

[0068] Specifically, the moving unit 604 is further configured to gradually reduce the speed of the liquid landing point when it moves from the rotation center to the first position 5; and gradually increase the speed of the liquid landing point when it moves from the first position 5 to the rotation center.

[0069] Specifically, the moving unit 604 is further configured such that, after the landing point reaches the first position 5, the nozzle 4 is moved so that the landing point moves from the first position 5 to the third position 7, and the nozzle 4 is reciprocated between the first position 5 and the third position 7, and the third position 7 is symmetrical with the first position 5 about the rotation center of the wafer 1. Those skilled in the art will readily conceive of other embodiments of the present application after considering the specification and practicing the embodiments disclosed herein. This application is intended to cover any variations, uses, or adaptations of the present application that follow the general principles of this application and include common knowledge or customary technical means in the art that are not disclosed herein.

[0070] It should be understood that the present application is not limited to the exact structures described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. A wafer processing method, characterized in that: include: Rotating wafers; supplying a processing liquid to the rotation center of the wafer through a nozzle to form a local liquid film on the surface of the wafer; Before the local liquid film spreads to the edge of the wafer, the nozzle is moved and the processing liquid is continuously supplied, so that the landing point of the processing liquid moves from the rotation center of the wafer to the first position.

2. The wafer processing method according to claim 1, wherein: The nozzle is moved before the local liquid film spreads to the first position.

3. The wafer processing method according to claim 2, wherein: When the local liquid film diffuses to the second position, the nozzle is moved so that when the liquid landing point reaches the first position, the distance between the local liquid film and the wafer rotation center is greater than or equal to the distance between the first position and the wafer rotation center, and the second position is between the wafer rotation center and the first position.

4. The wafer processing method according to claim 3, wherein: The nozzle continuously supplies the treatment liquid.

5. The wafer processing method according to claim 4, characterized in that: The nozzle supplies the processing liquid toward the rotation center of the wafer for a preset time, so that the local liquid film spreads to the second position when the nozzle starts to move.

6. The wafer processing method according to claim 5, characterized in that: It also includes obtaining the time t1 when the liquid point moves from the wafer rotation center to the first position and the time t2 when the local liquid film diffuses from the wafer rotation center to the first position, and the preset time t=t2-t1.

7. The wafer processing method according to claim 3, wherein: It also includes obtaining the amount of processing liquid required when the local liquid film covers the second position, and when the amount of processing liquid required when the local liquid film covers the second position is supplied at the rotation center of the wafer, the nozzle stops supplying the processing liquid.

8. The wafer processing method according to claim 1, wherein: Also includes: When the liquid landing point reaches the first position, the nozzle is reciprocated between the wafer rotation center and the first position.

9. The wafer processing method according to claim 8, wherein: The speed at which the liquid landing point moves from the rotation center to the first position is less than the speed at which the liquid landing point moves from the first position to the rotation center.

10. The wafer processing method according to claim 8, wherein: The speed of the liquid landing point gradually decreases when it moves from the rotation center to the first position; the speed of the liquid landing point gradually increases when it moves from the first position to the rotation center.

11. The wafer processing method according to claim 1, wherein: Also includes: When the liquid landing point reaches the first position, the nozzle is moved so that the liquid landing point moves from the first position to the third position, and the nozzle is moved back and forth between the first position and the third position. The third position is symmetrical to the first position about the rotation center of the wafer.

12. A wafer processing device, characterized in that: include: Controller; a rotating unit, electrically connected to the controller, and configured to rotate the wafer; a supply unit, electrically connected to the controller and comprising a nozzle, for supplying a processing liquid to the rotation center of the wafer through the nozzle under the control of the controller, so as to form a local liquid film on the surface of the wafer; A moving unit is electrically connected to the controller and connected to the nozzle, and is used to move the nozzle and continuously supply the processing liquid before the local liquid film diffuses to the edge of the wafer under the control of the controller, so that the landing point of the processing liquid moves from the center of rotation of the wafer to the first position.

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