Display device

Abstract

In a non-display region (N) inside a display region, a plurality of inverted taper structures (Ra, Rb, Rc, Rd, Re, Rf, and Rg) are disposed in an annular shape so as to surround a through-hole (H) penetrating a display panel in the thickness direction. Each of the inverted taper structures (Ra-Rg) includes: a column portion (C) formed in the same layer and made of the same material as inorganic insulating films (15, 20); and a lid portion (L) disposed on the column portion (C). A first inorganic sealing film (41) is disposed so as to cover each of the inverted taper structures (Ra-Rg). The lid portion (L) has a thickness of at least 0.5 μm, and at least the surface thereof is made of a material having a lower dry etching rate than the inorganic insulating films (15, 20).

Description

display device

[0001] The present invention relates to a display device.

[0002] In recent years, self-luminous organic electroluminescence (EL) display devices using organic electroluminescence (EL) elements have been attracting attention as a display device alternative to liquid crystal display devices. For example, flexible organic EL display devices have been proposed, which are manufactured by forming a resin substrate on a glass substrate, forming organic EL elements and the like on the resin substrate, and then peeling the resin substrate from the glass substrate. Here, the organic EL elements include, for example, an organic EL layer including a light-emitting layer, a first electrode provided on one surface of the organic EL layer, and a second electrode provided on the other surface of the organic EL layer.

[0003] For example, Patent Document 1 discloses an organic electroluminescence display panel in which an organic EL layer and a second electrode formed by a vapor deposition method are divided by a partition wall having an inversely tapered portion.

[0004] Japanese Patent Application Laid-Open No. 2007-250520

[0005] In organic EL display devices, it has been proposed to provide an island-shaped non-display area within the display area where images are displayed, and to provide through-holes penetrating the non-display area in the thickness direction in order to accommodate, for example, a camera or fingerprint sensor. However, providing through-holes within the display area may allow moisture and other contaminants to enter the display area through the organic EL layer and second electrode exposed through the through-holes. This would result in deterioration of the organic EL layer, so it is necessary to form the organic EL layer and second electrode separately around the through-holes. Here, it is effective to use an inverse tapered structure (hereinafter also referred to as an "inverse tapered structure") as described in Patent Document 1, to form the organic EL layer and second electrode separately on the display area side and the through-hole side. However, when forming an inverse tapered structure by wet etching, the back surface of the glass substrate on which the resin substrate is formed may become rough due to wet etching, making it difficult to read alignment marks, or causing peeling defects due to uneven irradiation of laser light when peeling the resin substrate, resulting in reduced manufacturing yields. Therefore, there is room for improvement.

[0006] The present invention has been made in view of the above points, and an object of the present invention is to form an inverse tapered structure by dry etching.

[0007] In order to achieve the above object, a display device according to the present invention has a display panel including: a substrate; a thin film transistor layer provided on the substrate and including an inorganic insulating film; a light-emitting element layer provided on the thin film transistor layer, the light-emitting element layer having a plurality of light-emitting elements, each of which has a first electrode, a light-emitting functional layer, and a second electrode stacked in that order, corresponding to a plurality of sub-pixels constituting a display area; and a first inorganic sealing film provided on the light-emitting element layer, wherein a non-display area is provided in an island shape within the display area, and a through-hole is provided in the non-display area so as to penetrate the display panel in a thickness direction, and a plurality of inverted tapered structures are provided in the non-display area so as to surround the through-hole, and each of the inverted tapered structures includes a pillar portion formed in the same layer and made of the same material as the inorganic insulating film, and a lid portion provided on the pillar portion and protruding in an eave-like manner from the pillar portion to at least one of the through-hole side and the display area side, and the first inorganic sealing film is provided so as to cover each of the inverted tapered structures,

[0008] According to the present invention, an inverse tapered structure can be formed by dry etching.

[0009] FIG. 1 is a plan view showing a schematic configuration of an organic EL display device according to a first embodiment of the present invention. FIG. 2 is a plan view of a display region of an organic EL display panel constituting the organic EL display device according to the first embodiment of the present invention. FIG. 3 is a cross-sectional view of the display region of an organic EL display panel constituting the organic EL display device along line III-III in FIG. 1. FIG. 4 is an equivalent circuit diagram of a thin-film transistor layer constituting the organic EL display panel of the organic EL display device according to the first embodiment of the present invention. FIG. 5 is a cross-sectional view showing an organic EL layer constituting the organic EL display panel of the organic EL display device according to the first embodiment of the present invention. FIG. 6 is a plan view of a frame region of the organic EL display panel of the organic EL display device along line VI-VI in FIG. 1. FIG. 7 is a plan view of the non-display region of the organic EL display panel of the organic EL display device according to the first embodiment of the present invention and its surrounding area. FIG. 8 is a cross-sectional view of the non-display region of the organic EL display panel along line VIII-VIII in FIG. 7. FIG. 9 is a cross-sectional view showing a part of a process for manufacturing an organic EL display panel constituting the organic EL display device according to the first embodiment of the present invention. FIG. 10 is a cross-sectional view of the non-display region of an organic EL display panel constituting the organic EL display device according to a second embodiment of the present invention, corresponding to FIG. 8. FIG. 11 is a cross-sectional view of a non-display area of ​​an organic EL display panel constituting an organic EL display device according to a third embodiment of the present invention, and corresponds to FIG.

[0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments.

[0011] First Embodiment FIGS. 1 to 9 show a first embodiment of a display device according to the present invention. In the following embodiments, an organic EL display device including an organic EL element layer is exemplified as a display device including a light-emitting element layer. FIG. 1 is a plan view showing a schematic configuration of an organic EL display device 70 according to this embodiment. FIG. 2 is a plan view of a display region D of an organic EL display panel 50a constituting the organic EL display device 70. FIG. 3 is a cross-sectional view of the display region D of the organic EL display panel 50a taken along line III-III in FIG. 1. FIG. 4 is an equivalent circuit diagram of a thin-film transistor layer 30a constituting the organic EL display panel 50a. FIG. 5 is a cross-sectional view of an organic EL layer 33 constituting the organic EL display panel 50a. FIG. 6 is a plan view of a frame region F of the organic EL display panel 50a taken along line VI-VI in FIG. 1. FIG. 7 is a plan view of a non-display region N of the organic EL display panel 50a and its surroundings. 8 is a cross-sectional view of the non-display area N of the organic EL display panel 50a taken along line VIII-VIII in FIG.

[0012] As shown in FIG. 1, the organic EL display device 70 includes an organic EL display panel 50a having a through-hole H in a non-display area N, and an image sensor 60 installed as an electronic component on the back side of the through-hole H of the organic EL display panel 50a.

[0013] 1, the organic EL display panel 50a includes, for example, a rectangular display area D for displaying images, and a frame area F provided in a frame shape around the display area D. Note that, although the present embodiment illustrates a rectangular display area D, this rectangular shape also includes, for example, a substantially rectangular shape with arc-shaped sides, arc-shaped corners, or a shape with a notch in one of the sides.

[0014] As shown in FIG. 2 , a plurality of sub-pixels P are arranged in a matrix in the display region D. Also, as shown in FIG. 2 , for example, a sub-pixel P having a red light-emitting region Er for displaying red, a sub-pixel P having a green light-emitting region Eg for displaying green, and a sub-pixel P having a blue light-emitting region Eb for displaying blue are arranged adjacent to one another in the display region D. Note that, for example, three adjacent sub-pixels P having a red light-emitting region Er, a green light-emitting region Eg, and a blue light-emitting region Eb form one pixel in the display region D. Also, as shown in FIG. 1 , a non-display region N is provided in an island shape within the display region D. Here, in the non-display region N, a through-hole H is provided that is circular in plan view and penetrates the organic EL display panel 50a in its thickness direction in order to install an imaging element 60 on the back side, as shown in FIG. 1 .

[0015] At the lower end of the frame region F in FIG. 1 , a terminal portion T is provided so as to extend in one direction (the X direction in the figure). Here, in the frame region F, as shown in FIG. 1 , a bending portion B is provided between the display region D and the terminal portion T so as to extend in one direction (the X direction in the figure). The bending portion B can be bent, for example, 180° (in a U-shape) with the X direction in the figure as the bending axis. Also, in the frame region F, as shown in FIGS. 1 and 6 , a trench G, which is approximately C-shaped in plan view, is provided in the planarization film 22a (described later), penetrating the planarization film 22a. Here, the trench G is provided so as to be approximately C-shaped in plan view, opening on the terminal portion T side, as shown in FIG. 1 .

[0016] As shown in FIG. 3 , the organic EL display panel 50 a includes a resin substrate 10, a thin film transistor (hereinafter also referred to as “TFT”) layer 30 a provided on the resin substrate 10, an organic EL element layer 40 provided as a light emitting element layer on the TFT layer 30 a, and a sealing film 45 provided on the organic EL element layer 40.

[0017] The resin substrate 10 is made of, for example, polyimide resin.

[0018] As shown in FIG. 3 , the TFT layer 30a includes a base coat film 11 provided on a resin substrate 10, an initialization TFT 9a (see FIG. 4 ), a compensation TFT 9b (see FIG. 4 ), a writing TFT 9c (see FIG. 4 ), a driving TFT 9d, a power supply TFT 9e (see FIG. 4 ), a light-emission control TFT 9f, an anode discharge TFT 9g, and a capacitor 9h provided on the base coat film 11 in each subpixel P, and a planarization film 22a provided on each of the TFTs 9a to 9g and the capacitor 9h. Here, as shown in FIG. 2 , the TFT layer 30a is provided with a plurality of gate lines 14g extending parallel to one another in the X direction in the drawing. Furthermore, as shown in FIG. 2 , the TFT layer 30a is provided with a plurality of light-emission control lines 14e extending parallel to one another in the X direction in the drawing. 2, the TFT layer 30a is provided with a plurality of second initialization power lines 19i extending parallel to one another in the X direction in the drawing. As shown in FIG. 2, each light-emitting control line 14e is provided adjacent to each gate line 14g and each second initialization power line 19i. As shown in FIG. 2, the TFT layer 30a is provided with a plurality of source lines 21h extending parallel to one another in the Y direction in the drawing. As shown in FIG. 2, the TFT layer 30a is provided with a plurality of power supply lines 21i extending parallel to one another in the Y direction in the drawing. As shown in FIG. 2, each power supply line 21i is provided adjacent to each source line 21h.

[0019] The base coat film 11, the first gate insulating film 13 (described later), the first interlayer insulating film 15, the second gate insulating films 18a and 18b, and the second interlayer insulating film 20 are each composed of a single layer or a multilayer film of an inorganic insulating film such as silicon nitride, silicon oxide, silicon oxynitride, etc. Here, at least the side of the first interlayer insulating film 15 facing the second semiconductor layer 17a (described later) and the side of the second gate insulating film 18a facing the second semiconductor layer 17a are composed of, for example, a silicon oxide film.

[0020] The initialization TFT 9a, compensation TFT 9b, and anode discharge TFT 9g each include a second semiconductor layer, a second gate electrode, a third terminal electrode, and a fourth terminal electrode, each formed of an oxide semiconductor such as an In—Ga—Zn—O system. The writing TFT 9c, driving TFT 9d, power supply TFT 9e, and light-emission control TFT 9f each include a first semiconductor layer, a first gate electrode, a first terminal electrode, and a second terminal electrode, each formed of polysilicon such as low-temperature polysilicon (LTPS). The In—Ga—Zn—O system oxide semiconductor is a ternary oxide of In (indium), Ga (gallium), and Zn (zinc), and the proportions (composition ratios) of In, Ga, and Zn are not particularly limited. The In—Ga—Zn—O system semiconductor may be amorphous or crystalline. As the crystalline In—Ga—Zn—O-based semiconductor, a crystalline In—Ga—Zn—O-based semiconductor in which the c-axis is oriented approximately perpendicular to the layer surface is preferred. In place of the In—Ga—Zn—O-based semiconductor, other oxide semiconductors may be included. Examples of other oxide semiconductors include In—Sn—Zn—O-based semiconductors (e.g., In ２ O ３ -SnO ２ In—ZnO; InSnZnO). Here, the In—Sn—Zn—O based semiconductor is a ternary oxide of In (indium), Sn (tin), and Zn (zinc). Other oxide semiconductors include In—Al—Zn—O based semiconductors, In—Al—Sn—Zn—O based semiconductors, Zn—O based semiconductors, In—Zn—O based semiconductors, Zn—Ti—O based semiconductors, Cd—Ge—O based semiconductors, Cd—Pb—O based semiconductors, CdO (cadmium oxide), Mg—Zn—O based semiconductors, In—Ga—Sn—O based semiconductors, In—Ga—O based semiconductors, Zr—In—Zn—O based semiconductors, Hf—In—Zn—O based semiconductors, Al—Ga—Zn—O based semiconductors, Ga—Zn—O based semiconductors, In—Ga—Zn—Sn—O based semiconductors, InGaO ３ (ZnO) ５ , magnesium zinc oxide (Mg ｘ Zn １－ｘ O), cadmium zinc oxide (Cd ｘ Zn １－ｘThe Zn—O-based semiconductor may be ZnO in an amorphous state, a polycrystalline state, a microcrystalline state in which the amorphous state and the polycrystalline state are mixed, or a semiconductor in which no impurity element is added, to which one or more impurity elements selected from the group 1 elements, the group 13 elements, the group 14 elements, the group 15 elements, the group 17 elements, etc. are added.

[0021] 4, in each subpixel P, the initialization TFT 9a has a second gate electrode electrically connected to the gate line 14g(n-1) of the previous stage (n-1 stage), a third terminal electrode electrically connected to a lower conductive layer 16c of a capacitor 9h (described later) and a first gate electrode of the driving TFT 9d, and a fourth terminal electrode electrically connected to a power supply line 21i. In the equivalent circuit diagram of FIG. 4, the third and fourth terminal electrodes of the initialization TFT 9a (compensation TFT 9b, anode discharge TFT 9g) are indicated by circled numbers 3 and 4, and the first and second terminal electrodes of the writing TFT 9c (driving TFT 9d, power supply TFT 9e, light-emission control TFT 9f) are indicated by circled numbers 1 and 2. 4 shows the pixel circuit of the sub-pixel P in the nth row and the mth column, but also includes a part of the pixel circuit of the sub-pixel P in the (n-1)th row and the mth column. Also, in the equivalent circuit diagram of FIG. 4, the power supply line 21i that supplies the high power supply voltage ELVDD also serves as the first initialization power supply line, but the power supply line 21i and the first initialization power supply line may be provided separately. Also, while the same voltage as the low power supply voltage ELVSS is input to the second initialization power supply line 20i, this is not limiting, and a voltage different from the low power supply voltage ELVSS that turns off the organic EL element 35 (described later) may be input.

[0022] As shown in FIG. 4, in each subpixel P, the compensation TFT 9b has a second gate electrode electrically connected to the gate line 14g(n) of its own row (nth row), a third terminal electrode electrically connected to the first gate electrode of the driving TFT 9d, and a fourth terminal electrode electrically connected to the first terminal electrode of the driving TFT 9d.

[0023] As shown in FIG. 4, in each subpixel P, the writing TFT 9c has a first gate electrode electrically connected to the gate line 14g(n) of its own row (nth row), a first terminal electrode electrically connected to the corresponding source line 21h, and a second terminal electrode electrically connected to the second terminal electrode of the driving TFT 9d.

[0024] 4, in each sub-pixel P, the driving TFT 9d has its first gate electrode 14b (see FIG. 3) electrically connected to the third terminal electrodes of the initialization TFT 9a and the compensation TFT 9b, its first terminal electrode 21e (see FIG. 3) electrically connected to the fourth terminal electrode of the compensation TFT 9b and the second terminal electrode of the power supply TFT 9e, and its second terminal electrode 21g (see FIG. 3) electrically connected to the second terminal electrode of the writing TFT 9c and the first terminal electrode of the light emission control TFT 9f. Here, the driving TFT 9d is configured to control the current of the organic EL element 35. 3, the driving TFT 9d includes a first semiconductor layer 12b provided on the base coat film 11, a first gate insulating film 13 provided on the first semiconductor layer 12b, a first gate electrode 14b provided on the first gate insulating film 13 so as to overlap with a first channel region 12bc described later, a first interlayer insulating film 15 and a second interlayer insulating film 20 provided in this order so as to cover the first gate electrode 14b, and a first terminal electrode 21e and a second terminal electrode 21g provided spaced apart from each other on the second interlayer insulating film 20. Here, as shown in FIG. 3, the first semiconductor layer 12b includes a first conductor region 12ba and a second conductor region 12bb provided spaced apart from each other, and a first channel region 12bc defined between the first conductor region 12ba and the second conductor region 12bb. As shown in FIG. 3, the first terminal electrode 21e and the second terminal electrode 21g are electrically connected to the first conductor region 12ba and the second conductor region 12bb of the first semiconductor layer 12b, respectively, via two contact holes formed in the stacked film of the first gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 20.

[0025] As shown in FIG. 4, in each subpixel P, the power supply TFT 9e has a first gate electrode electrically connected to the light-emitting control line 14e of its own row (nth row), a first terminal electrode electrically connected to the power supply line 21i, and a second terminal electrode electrically connected to the first terminal electrode of the driving TFT 9d.

[0026] As shown in FIG. 4, in each subpixel P, the light-emission control TFT 9f has its first gate electrode 14a (see FIG. 3) electrically connected to the light-emission control line 14e of its own row (nth row), its first terminal electrode 21a (see FIG. 3) electrically connected to the second terminal electrode of the driving TFT 9d, and its second terminal electrode 21b (see FIG. 3) electrically connected to the first electrode 31a of the organic EL element 35. 3, the light-emission controlling TFT 9f includes a first semiconductor layer 12a provided on the base coat film 11, a first gate insulating film 13 provided on the first semiconductor layer 12a, a first gate electrode 14a provided on the first gate insulating film 13 so as to overlap a first channel region 12ac described later, a first interlayer insulating film 15 and a second interlayer insulating film 20 provided in this order so as to cover the first gate electrode 14a, and a first terminal electrode 21a and a second terminal electrode 21b provided spaced apart from each other on the second interlayer insulating film 20. Here, as shown in FIG. 3, the first semiconductor layer 12a includes a first conductor region 12aa and a second conductor region 12ab provided spaced apart from each other, and a first channel region 12ac defined between the first conductor region 12aa and the second conductor region 12ab. As shown in FIG. 3, the first terminal electrode 21a and the second terminal electrode 21b are electrically connected to the first conductor region 12aa and the second conductor region 12ab of the first semiconductor layer 12a, respectively, via two contact holes formed in the stacked film of the first gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 20.

[0027] As shown in FIG. 4, in each subpixel P, the anode discharge TFT 9g has its second gate electrode 19a (see FIG. 3) electrically connected to the gate line 14g(n) of its own row (nth row), its third terminal electrode 21c (see FIG. 3) electrically connected to the first electrode 31a of the organic EL element 35, and its fourth terminal electrode 21d (see FIG. 3) electrically connected to the second initialization power line 19i. 3, the anode discharge TFT 9g includes a second semiconductor layer 17a provided on the first interlayer insulating film 15, a second gate insulating film 18a provided on the second semiconductor layer 17a, a second gate electrode 19a provided on the second gate insulating film 18a so as to overlap with a second channel region 17ac (described later), a second interlayer insulating film 20 provided so as to cover the second gate electrode 19a, and a third terminal electrode 21c and a fourth terminal electrode 21d provided so as to be spaced apart from each other on the second interlayer insulating film 20. Here, as shown in FIG. 3, the second semiconductor layer 17a includes a third conductor region 17aa and a fourth conductor region 17ab provided so as to be spaced apart from each other, and a second channel region 17ac provided between the third conductor region 17aa and the fourth conductor region 17ab. 3, the third terminal electrode 21c is electrically connected to the third conductor region 17aa of the second semiconductor layer 17a via a contact hole formed in the second interlayer insulating film 20 and the relay electrode 16a. Furthermore, the fourth terminal electrode 21d is electrically connected to the fourth conductor region 17ab of the second semiconductor layer 17a via a contact hole formed in the second interlayer insulating film 20 and the relay electrode 16b. Furthermore, the third terminal electrode 21c of the anode discharge TFT 9g is electrically connected to the second conductor region 12ab of the first semiconductor layer 12a of the emission control TFT 9f via a contact hole formed in the second interlayer insulating film 20 and a contact hole formed in the stacked film of the relay electrode 16a, the first gate insulating film 13, and the first interlayer insulating film 15.

[0028] 4, in each subpixel P, the capacitor 9h has a lower conductive layer 16c (see FIG. 3) electrically connected to the first gate electrode 14b (see FIG. 3) of the drive TFT 9d and the third terminal electrodes of the initialization TFT 9a and the compensation TFT 9b, and an upper conductive layer 19b (see FIG. 3) electrically connected to the third terminal electrode of the anode discharge TFT 9g, the second terminal electrode of the light emission control TFT 9f, and the first electrode 31a of the organic EL element 35. Also, as shown in FIG. 3, the capacitor 9h includes a lower conductive layer 16c formed in the same layer as the relay electrodes 16a and 16b and made of the same material, a second gate insulating film 18b provided on the lower conductive layer 16c, and an upper conductive layer 19b provided on the second gate insulating film 18b and made of the same material as the second gate electrode 19a and made of the same layer. As shown in FIG. 3, the upper conductive layer 19b is electrically connected to a wiring layer 21f formed in the same layer as the first terminal electrode 21a and the like using the same material, via a contact hole formed in the second interlayer insulating film 20.

[0029] The planarizing film 22a has a flat surface in the display region D and is made of an organic resin material such as an acrylic resin.

[0030] 3, the organic EL element layer 40 includes a plurality of first electrodes 31a, a common edge cover 32a, a plurality of organic EL layers 33, and a common second electrode 34, which are stacked in order corresponding to a plurality of subpixels P. Here, in each subpixel P, the first electrode 31a, the organic EL layer 33, and the second electrode 34 are stacked in order to form an organic EL element 35 (see FIG. 4) provided as a light-emitting element.

[0031] The first electrode 31a is electrically connected to the second terminal electrode 21c of the emission control TFT 9f of each subpixel P through a contact hole formed in the planarization film 22a. The first electrode 31a has a function of injecting holes (positive holes) into the organic EL layer 33. In order to improve the efficiency of hole injection into the organic EL layer 33, the first electrode 31a is preferably formed of a material with a large work function. Examples of materials that can be used to form the first electrode 31a include metal materials such as silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au), titanium (Ti), ruthenium (Ru), manganese (Mn), indium (In), ytterbium (Yb), lithium fluoride (LiF), platinum (Pt), palladium (Pd), molybdenum (Mo), iridium (Ir), and tin (Sn). The material constituting the first electrode 31a is, for example, astatine (At) / astatine oxide (AtO ２ The first electrode 31a may be made of an alloy of tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), or another conductive oxide. The first electrode 31a may be formed by stacking multiple layers made of the above materials. Examples of compound materials with a large work function include indium tin oxide (ITO) and indium zinc oxide (IZO).

[0032] The edge cover 32a is provided in a lattice pattern and is common to all the sub-pixels P, and is made of an organic resin material such as an acrylic resin.

[0033] The organic EL layer 33 is provided as a light-emitting functional layer, and as shown in FIG. 5, includes a hole injection layer 1, a hole transport layer 2, a light-emitting layer 3, an electron transport layer 4, and an electron injection layer 5, which are stacked in this order on the first electrode 31 a.

[0034] The hole injection layer 1 is also called an anode buffer layer, and has the function of bringing the energy levels of the first electrode 31a and the organic EL layer 33 closer to each other, thereby improving the efficiency of hole injection from the first electrode 31a to the organic EL layer 33. Examples of materials that form the hole injection layer 1 include triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, phenylenediamine derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, and stilbene derivatives.

[0035] The hole transport layer 2 has a function of improving the efficiency of transporting holes from the first electrode 31a to the organic EL layer 33. Here, examples of materials constituting the hole transport layer 2 include porphyrin derivatives, aromatic tertiary amine compounds, styrylamine derivatives, polyvinylcarbazole, poly-p-phenylenevinylene, polysilane, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, hydrogenated amorphous silicon, hydrogenated amorphous silicon carbide, zinc sulfide, and zinc selenide.

[0036] The light-emitting layer 3 is a region into which holes and electrons are injected from the first electrode 31 a and the second electrode 34, respectively, and where the holes and electrons recombine when a voltage is applied by the first electrode 31 a and the second electrode 34. Here, the light-emitting layer 3 is made of a material with high luminous efficiency. Examples of materials that can be used to form the light-emitting layer 3 include metal oxinoid compounds [8-hydroxyquinoline metal complexes], naphthalene derivatives, anthracene derivatives, diphenylethylene derivatives, vinylacetone derivatives, triphenylamine derivatives, butadiene derivatives, coumarin derivatives, benzoxazole derivatives, oxadiazole derivatives, oxazole derivatives, benzimidazole derivatives, thiadiazole derivatives, benzothiazole derivatives, styryl derivatives, styrylamine derivatives, bisstyrylbenzene derivatives, trisstyrylbenzene derivatives, perylene derivatives, perinone derivatives, aminopyrene derivatives, pyridine derivatives, rhodamine derivatives, aquidin derivatives, phenoxazone, quinacridone derivatives, rubrene, poly-p-phenylenevinylene, and polysilane.

[0037] The electron transport layer 4 has a function of efficiently transferring electrons to the light-emitting layer 3. Examples of materials constituting the electron transport layer 4 include organic compounds such as oxadiazole derivatives, triazole derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, tetracyanoanthraquinodimethane derivatives, diphenoquinone derivatives, fluorenone derivatives, silole derivatives, and metal oxinoid compounds.

[0038] The electron injection layer 5 has a function of bringing the energy levels of the second electrode 34 and the organic EL layer 33 closer to each other and improving the efficiency of electron injection from the second electrode 34 to the organic EL layer 33, and this function can reduce the driving voltage of the organic EL element 35. The electron injection layer 5 is also called a cathode buffer layer. Here, examples of materials constituting the electron injection layer 5 include lithium fluoride (LiF), magnesium fluoride (MgF ２ ), calcium fluoride (CaF ２ ), strontium fluoride (SrF ２ ), barium fluoride (BaF ２inorganic alkali compounds such as aluminum oxide (Al ２ O ３ ), strontium oxide (SrO), etc.

[0039] As shown in FIG. 3 , the second electrode 34 is provided in common to all subpixels P so as to cover each organic EL layer 33 and the edge cover 32 a. The second electrode 34 has a function of injecting electrons into the organic EL layer 33. To improve the efficiency of electron injection into the organic EL layer 33, the second electrode 34 is preferably made of a material with a small work function. Examples of materials that can be used for the second electrode 34 include silver (Ag), aluminum (Al), vanadium (V), calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb), and lithium fluoride (LiF). Examples of materials that can be used for the second electrode 34 include magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), and astatine (At) / astatine oxide (AtO). ２ The second electrode 34 may be formed of an alloy such as lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), or lithium fluoride (LiF) / calcium (Ca) / aluminum (Al). The second electrode 34 may be formed of a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), or indium zinc oxide (IZO). The second electrode 34 may be formed by stacking multiple layers made of the above materials. Examples of materials with a low work function include magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), and lithium fluoride (LiF) / calcium (Ca) / aluminum (Al).

[0040] As shown in FIG. 3 , the sealing film 45 is provided to cover the second electrode 34. It includes a first inorganic sealing film 41, an organic sealing film 42, and a second inorganic sealing film 43 stacked in this order on the second electrode 34, and functions to protect the organic EL layer 33 of the organic EL element 35 from moisture and oxygen. The first inorganic sealing film 41 and the second inorganic sealing film 43 are made of inorganic insulating films such as silicon nitride, silicon oxide, and silicon oxynitride. The organic sealing film 42 is made of an organic resin material such as acrylic resin, epoxy resin, silicone resin, polyurea resin, parylene resin, polyimide resin, and polyamide resin. While the present embodiment illustrates a three-layer sealing film 45 in which the first inorganic sealing film 41, the organic sealing film 42, and the second inorganic sealing film 43 are stacked in this order, the sealing film 45 may have, for example, a single-layer structure including only the first inorganic sealing film 41, or a two-layer structure in which the first inorganic sealing film 41 and the organic sealing film 42 are stacked in this order. Furthermore, in the sealing film 45, as shown in Figures 3, 6 and 8, an organic sealing film 42 and a second inorganic sealing film 43 are provided on a first inorganic sealing film 41, and the second inorganic sealing film 43 is provided so as to cover the organic sealing film 42 on the first inorganic sealing film 41.

[0041] In addition, as shown in Figures 7 and 8, in the non-display area N of the organic EL display panel 50a, an inverted taper structure Ra, an inverted taper structure Rb, an inverted taper structure Rc, an inner dam wall Wc, an inverted taper structure Rd, an inverted taper structure Re, an inverted taper structure Rf, and an inverted taper structure Rg are arranged in a ring shape in that order to surround the through hole H.

[0042] As shown in FIG. 8, the inverse tapered structures Ra to Rg each include a column C provided in an annular shape and a lid L provided on the column C in an annular shape.

[0043] 8, the pillar portion C includes a lower layer portion 15b provided on the first gate insulating film 13 and formed in the same layer and made of the same material as the first interlayer insulating film 15, and an upper layer portion 20b provided on the lower layer portion 15b and formed in the same layer and made of the same material as the second interlayer insulating film 20. Here, the height of the pillar portion C is set to 1.5 μm or less so that the first inorganic sealing film 41 reliably covers each of the inverted tapered structures Ra to Rg.

[0044] As shown in FIG. 8 , the lid portion L includes a base layer 22d provided on the upper layer portion 20b and formed in the same layer and made of the same material as the planarization film 22a, and a surface layer 31c provided to cover the upper surface of the base layer 22d and formed in the same layer and made of the same material as the first electrode 31a. As shown in FIG. 8 , the lid portion L is provided so as to protrude in an eave-like manner by 0.5 μm or more from the column portion C toward the through-hole H side and the display region D side. The lid portion L is also provided with a thickness of, for example, 0.5 μm or more, and at least the surface layer 31c on the surface is formed of a material having a lower dry etching rate than the first interlayer insulating film 15 and the second interlayer insulating film 20. Note that, in this embodiment, the inverted tapered structures Ra to Rf are illustrated in which the lid portion L protrudes from the column portion C toward both the through-hole H side and the display region D side. However, the lid portion L may also protrude in an eave-like manner from the column portion C toward either the through-hole H side or the display region D side.

[0045] Due to the steps created by each inverted tapered structure Ra to Rg having the column portion C and lid portion L of the above-mentioned configuration, the organic EL layer 33 and the second electrode 34 are stacked in order, separated from those in the display region D, on the upper surface of the lid portion L of each inverted tapered structure Ra to Rg, the upper surface of the inner dam wall Wc, and the upper surface of the first gate insulating film 13 exposed from each inverted tapered structure Ra to Rg, as shown in Figure 8.

[0046] 8, the inner damming wall We includes a first inorganic layer 15e provided on the first gate insulating film 13 and formed in the same layer and of the same material as the first interlayer insulating film 15, a second inorganic layer 20e provided on the first inorganic layer 15e and formed in the same layer and of the same material as the second interlayer insulating film 20, a first resin layer 22e provided on the second inorganic layer 20e and formed in the same layer and of the same material as the planarizing film 22a, and a second resin layer 32e provided on the first resin layer 22e and formed in the same layer and of the same material as the edge cover 32a. Here, as shown in FIG. 8, the inner damming wall We is provided so as to overlap the inner edge of the organic sealing film 42 and is configured to suppress the spread of ink that will become the organic sealing film 42. As shown in Figure 8, the sealing film 45 is arranged on the through hole H side (right side in the figure) of the inner dam wall Wc, so as to cover the inverted tapered structures Ra to Rc with the second inorganic sealing film 43 stacked on top of the first inorganic sealing film 41.

[0047] 7 and 8, the organic EL display panel 50a is provided with detour wiring 21n that detours around the through-hole H around the inverse tapered structure Rg in the non-display region N. Here, the detour wiring 21n is electrically connected to the display wiring (gate line 14g, light-emitting control line 14e, source line 21h, etc.) that extends to the portion corresponding to the through-hole H.

[0048] As shown in FIG. 1, the organic EL display panel 50a also includes a first outer dam wall Wa in the frame region F, which is arranged in a frame shape outside the trench G so as to surround the display region D, and a second outer dam wall Wb in a frame shape around the first outer dam wall Wa.

[0049] 6, the first outer damming wall Wa includes a lower resin layer 22b formed in the same layer and made of the same material as the planarizing film 22a, and an upper resin layer 32c provided on the lower resin layer 22b via a connection wiring 31b and formed in the same layer and made of the same material as the edge cover 32a. The connection wiring 31b is formed in the same layer and made of the same material as the first electrode 31a. The first outer damming wall Wa is provided to overlap the outer peripheral edge of the organic sealing film 42 and is configured to suppress outward spreading of the ink that forms the organic sealing film 42.

[0050] As shown in Figure 6, the second outer damming wall Wb comprises a lower resin layer 22c formed in the same layer and made of the same material as the planarization film 22a, and an upper resin layer 32d provided on the lower resin layer 22c via connection wiring 31b and formed in the same layer and made of the same material as the edge cover 32a.

[0051] 1 , the organic EL display panel 50a includes a first frame wiring 21j that is provided in a frame shape inside the trench G in the frame region F, and whose both ends of the opening of the trench G extend to a terminal portion T. Here, the first frame wiring 21j is electrically connected to a power supply line 21i in the display region D, and is configured so that a high power supply voltage (ELVDD) is input at the terminal portion T. The first frame wiring 21j and a second frame wiring 21k (described later) are formed in the same layer and made of the same material as the source line 21h, the power supply line 21i, etc.

[0052] 1, the organic EL display panel 50a also includes a second frame wiring 21k that is provided in a generally C-shape outside the trench G in the frame region F and has both ends extending to the terminal portion T. Here, the second frame wiring 21k is electrically connected to the second electrode 34 in the display region D via the connection wiring 31b provided in the trench G, as shown in FIG. 6, and is configured so that a low power supply voltage (ELVSS) is input at the terminal portion T.

[0053] 6, the organic EL display panel 50a also includes a plurality of peripheral photo-spacers 32b in the frame region F, which are provided in an island shape so as to protrude upward from both edges of the trench G. Here, the peripheral photo-spacers 32b are formed in the same layer as the edge cover 32a and made of the same material.

[0054] The imaging element 60 is configured by, for example, a complementary metal oxide semiconductor (CMOS) camera, a charge coupled device (CCD) camera, etc. Note that, although the imaging element 60 is exemplified as an electronic component in this embodiment, the electronic component may be, for example, an optical sensor such as a fingerprint sensor or a face authentication sensor.

[0055] In the organic EL display device 70 described above, in each subpixel P, when the light-emission control line 14e is first selected and inactivated, the organic EL element 35 enters a non-light-emitting state. In this non-light-emitting state, the preceding gate line 14g(n-1) is selected, and a gate signal is input to the initialization TFT 9a via the gate line 14g(n-1), turning the initialization TFT 9a on. This applies the high power supply voltage ELVDD of the power supply line 21i to the capacitor 9h, and turns the driving TFT 9d on. As a result, the charge in the capacitor 9h is discharged, and the voltage applied to the first gate electrode of the driving TFT 9d is initialized. Next, the gate line 14(n) in the current row is selected and activated, thereby turning on the compensation TFT 9b and the writing TFT 9c, and a predetermined voltage corresponding to a source signal transmitted via the corresponding source line 21h is written into the capacitor 9h via the diode-connected driving TFT 9d. At the same time, the anode discharge TFT 9g is turned on, and an initialization signal is applied to the first electrode 31a of the organic EL element 35 via the second initialization power line 19i, resetting the charge accumulated in the first electrode 31a. Thereafter, the light-emission control line 14e is selected, turning on the power-supply TFT 9e and the light-emission control TFT 9f, and a drive current corresponding to the voltage applied to the first gate electrode of the driving TFT 9d is supplied from the power line 21i to the organic EL element 35. In this way, in the organic EL display device 70, the organic EL element 35 emits light at a brightness corresponding to the drive current in each sub-pixel P, thereby displaying an image. The organic EL display device 70 is configured to capture an image of the front side of the organic EL display panel 50a using an image sensor 60 installed on the rear side of the organic EL display panel 50a.

[0056] Next, a method for manufacturing the organic EL display device 70 of this embodiment will be described. The method for manufacturing the organic EL display device 70 of this embodiment includes a TFT layer forming step, an organic EL element layer forming step, a sealing film forming step, and a through-hole forming step. Figure 9 is a cross-sectional view showing part of the process for manufacturing the organic EL display panel 50a that constitutes the organic EL display device of this embodiment.

[0057] <TFT Layer Formation Process> First, for example, a silicon oxide film (thickness: about 250 nm) and a silicon nitride film (thickness: about 100 nm) are sequentially formed on a resin substrate 10 formed on a glass substrate 110 (see FIG. 9 ) by, for example, a plasma CVD (Chemical Vapor Deposition) method, thereby forming a base coat film 11.

[0058] Next, an amorphous silicon film (about 50 nm thick) is formed by plasma CVD on the substrate surface on which the base coat film 11 has been formed, and the amorphous silicon film is crystallized by laser annealing or the like to form a polysilicon film, which is then patterned to form the first semiconductor layers 12a and 12b, etc.

[0059] Furthermore, on the surface of the substrate on which the first semiconductor layer 12a etc. has been formed, a silicon oxide film (about 100 nm thick) is formed by, for example, plasma CVD to form the first gate insulating film 13, and then a metal film such as a molybdenum film (about 100 nm thick) is formed by, for example, sputtering, and then the metal film is patterned to form the first gate electrodes 14a and 14b, the gate line 14g, the light-emitting control line 14e etc.

[0060] Thereafter, a silicon oxide film (about 100 nm thick) is formed by, for example, plasma CVD on the substrate surface on which the first gate electrode 14 a etc. are formed to form the first interlayer insulating film 15, and then a metal film such as a molybdenum film (about 100 nm thick) is formed by, for example, sputtering, and then the metal film is patterned to form the relay electrodes 16 a and 16 b and the lower conductive layer 16 c etc.

[0061] Next, on the surface of the substrate on which the relay electrodes 16a and the like are formed, InGaZnO is deposited by, for example, a sputtering method. ４ After forming a semiconductor film (thickness: about 30 nm) such as the first semiconductor layer 17a and the like and annealing the film, the semiconductor film is patterned to form the second semiconductor layer 17a and the like.

[0062] Furthermore, a silicon oxide film (with a thickness of about 300 nm) is formed by, for example, plasma CVD on the surface of the substrate on which the second semiconductor layer 17a etc. are formed, and then a metal film such as a molybdenum film (with a thickness of about 100 nm) is formed by sputtering, and these laminated films are patterned to form the second gate insulating films 18a and 18b, the second gate electrode 19a, the upper conductive layer 19b, the second initialization power supply line 19i and the like.

[0063] Thereafter, a silicon oxide film (about 150 nm thick) is formed by, for example, plasma CVD on the substrate surface on which the second gate insulating film 18a and the second gate electrode 19a, etc. are formed, thereby forming a second interlayer insulating film 20.

[0064] Furthermore, after appropriate contact holes are formed in the first gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 20, a titanium film (first metal film, thickness: about 50 nm), an aluminum film (second metal film, thickness: about 400 nm), a titanium film (third metal film, thickness: about 50 nm), etc. are deposited in this order by, for example, a sputtering method to form a metal laminate film, and then the metal laminate film is patterned to form the first terminal electrodes 21a and 21e, the second terminal electrodes 21b and 21g, the third terminal electrode 21c and the fourth terminal electrode 21d, the wiring layer 21f, the source line 21h, the power supply line 21i, the first frame wiring 21j, the second frame wiring 21k, the detour wiring 21n, etc.

[0065] Finally, an acrylic photosensitive resin film (about 2 μm thick) is applied to the substrate surface on which the first terminal electrodes 21 a and 21 e, etc. are formed, for example, by a slit coating method, and then the applied film is pre-baked, exposed to light, developed, and post-baked to form the planarizing film 22 a, the lower resin layers 22 b and 22 c, the base layer 22 d, and the first resin layer 22 e.

[0066] In this manner, the TFT layer 30a can be formed.

[0067] <Organic EL element layer forming process> First, on the surface of the substrate on which the planarizing film 22a and the like have been formed in the TFT layer forming process, an ITO film (thickness: about 10 nm), an Ag film (thickness: about 100 nm), an ITO film (thickness: about 10 nm), and the like are formed in this order by, for example, a sputtering method to form a conductive laminated film, and then the conductive laminated film is patterned to form the first electrode 31a, the connection wiring 31b, the surface layer 31c, and the like.

[0068] Next, a photosensitive acrylic resin (about 2 μm thick) is applied to the substrate surface on which the first electrode 31 a etc. is formed, for example, by spin coating or slit coating, and then the applied film is pre-baked, exposed to light, developed and post-baked to form the edge cover 32 a, peripheral photospacer 32 b, upper resin layers 32 c and 32 d, second resin layer 32 e etc.

[0069] Furthermore, a resist is applied to the substrate surface on which the edge cover 32a etc. are formed, for example, by spin coating or slit coating, and the resist is partially exposed to light to form a resist pattern J (see Figure 9) that covers all areas except the areas where the inverted taper structures Ra to Rg are to be formed.

[0070] Thereafter, the first interlayer insulating film 15 and the second interlayer insulating film 20 exposed from the resist pattern J and the surface layer 31c are removed by dry etching using an isotropic etching device such as ICP (Inductively Coupled Plasma), thereby forming a pillar portion C consisting of a lower layer portion 15b and an upper layer portion 20b, as shown in FIG. 9, and forming inverted tapered structures Ra to Rg.

[0071] Furthermore, after peeling off the resist pattern J, a hole injection layer 1, a hole transport layer 2, a light emitting layer 3, an electron transport layer 4, and an electron injection layer 5 are sequentially formed by, for example, a vacuum deposition method, each having a thickness of about several tens of nm to 50 nm, to form an organic EL layer 33.

[0072] Finally, an ITO film (with a thickness of about 100 nm) is formed by, for example, sputtering or vacuum deposition so as to cover the edge cover 32a and each organic EL layer 33, thereby forming the second electrode 34. Note that, since the inverted tapered structures Ra to Rg are arranged in the non-display region N, the organic EL layer 33 and the second electrode 34 in the non-display region N are formed in a stepped manner by the inverted tapered structures Ra to Rg, as shown in FIG.

[0073] In this manner, the organic EL element layer 40 can be formed.

[0074] <Sealing film forming process> First, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film is formed by plasma CVD using a mask on the surface of the substrate on which the organic EL element layer 40 formed in the organic EL element layer forming process is formed, thereby forming a first inorganic sealing film 41.

[0075] Subsequently, an organic resin material such as an acrylic resin is deposited by, for example, an inkjet method on the surface of the substrate on which the first inorganic sealing film 41 has been formed, to form an organic sealing film 42 .

[0076] Then, using a mask, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film is deposited by plasma CVD on the substrate surface on which the organic sealing film 42 has been formed, thereby forming a second inorganic sealing film 43, thereby forming a sealing film 45.

[0077] Furthermore, after a front-side protective sheet (not shown) is attached to the surface of the substrate on which the sealing film 45 is formed, laser light is irradiated from the glass substrate 110 side of the resin substrate 10 to peel the glass substrate 110 from the underside of the resin substrate 10, and further, a back-side protective sheet (not shown) is attached to the underside of the resin substrate 10 from which the glass substrate 110 has been peeled.

[0078] In this manner, the organic EL display panel 50a can be formed.

[0079] <Through-hole forming process> In the non-display region N of the organic EL display panel 50a formed in the sealing film forming process, for example, a laser beam is irradiated while being scanned in a circular pattern to form a through-hole H. Thereafter, when the organic EL display panel 50a having the through-hole H formed therein is fixed, for example, inside a housing, an imaging element 60 such as a camera is installed so that the imaging element 60 is located on the back side of the through-hole H.

[0080] In this manner, the organic EL display device 70 of this embodiment can be manufactured.

[0081] As described above, in the organic EL display device 70 of this embodiment, each of the inverted tapered structures Ra-Rg includes a pillar portion C composed of a lower layer portion 15b and an upper layer portion 20b formed in the same layer and made of the same material as the first interlayer insulating film 15 and the second interlayer insulating film 20, and a lid portion L composed of a base portion 22d and a surface layer 31c provided on the pillar portion C. Here, the surface layer 31c of the lid portion L is formed of a material having a lower dry etching rate than the inorganic insulating first interlayer insulating film 15 and the second interlayer insulating film 20. Therefore, in the organic EL element layer formation process, after the lid portion L is formed, the first interlayer insulating film 15 and the second interlayer insulating film 20 exposed from the lid portion L are removed by dry etching to form the pillar portion C, and the lid portion L protrudes from the pillar portion C toward the through hole H and the display region D in an eave-like manner. Furthermore, since the thickness of the lid portion L provided on the pillar portion C is 0.5 μm or more, film peeling of the lid portion L protruding from the pillar portion C in an eave-like manner can be suppressed. This makes it possible to form the inverse tapered structures Ra to Rg in which film peeling of the lid portion L from the column portion C is suppressed, and therefore the inverse tapered structures Ra to Rg can be formed by dry etching.

[0082] Furthermore, according to the organic EL display device 70 of this embodiment, since the annular inverted tapered structures Ra-Rg are formed around the through-hole H in the non-display region N, the organic EL layer 33 and the second electrode 34 can be formed in multiple layers, separated on the display region D side and the through-hole H side. Furthermore, since the first inorganic sealing film 41 of the sealing film 45 is provided so as to cover the inverted tapered structures Ra-Rg, the intrusion of moisture into the organic EL layer 33 provided in the display region D is suppressed, deterioration of the organic EL layer 33 can be suppressed, and the reliability of the organic EL display device 70 can be improved.

[0083] Furthermore, according to the organic EL display device 70 of this embodiment, the inverse tapered structures Ra to Rg are formed by dry etching, which eliminates roughness caused by wet etching on the back surface of the glass substrate 110 on which the resin substrate 10 is formed, suppresses poor reading of alignment marks and peeling defects caused by uneven irradiation of laser light, and makes it possible to suppress a decrease in the manufacturing yield of the organic EL display device 70.

[0084] Second Embodiment Figure 10 shows a second embodiment of a display device according to the present invention. Figure 10 is a cross-sectional view of a non-display region N of an organic EL display panel 50b constituting the organic EL display device of this embodiment, and corresponds to Figure 8 described in the first embodiment. In the following embodiments, the same parts as those in Figures 1 to 9 are designated by the same reference numerals, and detailed description thereof will be omitted.

[0085] In the first embodiment described above, an organic EL display device 70 was illustrated as including an organic EL display panel 50a in which the surface layer 31c was formed in the same layer and made of the same material as the first electrode 31a. In the present embodiment, an organic EL display device is illustrated as including an organic EL display panel 50b in which the surface layer 23b was formed in the same layer and made of the same material as the second bypass wiring 23a.

[0086] The organic EL display device of this embodiment includes an organic EL display panel 50b having a through hole H in the non-display area N, and an imaging element 60 installed as an electronic component on the back side of the through hole H of the organic EL display panel 50b.

[0087] The organic EL display panel 50b, like the organic EL display panel 50a of the first embodiment, includes, for example, a rectangular display area D for displaying images, and a frame area F arranged in a frame shape around the display area D.

[0088] As shown in FIG. 10 , the organic EL display panel 50 b includes a resin substrate 10, a TFT layer 30 b provided on the resin substrate 10, an organic EL element layer 40 provided as a light-emitting element layer on the TFT layer 30 b, and a sealing film 45 provided on the organic EL element layer 40.

[0089] The TFT layer 30b includes a base coat film 11 provided on a resin substrate 10, an initialization TFT 9a, a compensation TFT 9b, a writing TFT 9c, a driving TFT 9d, a power supply TFT 9e, a light emission control TFT 9f, an anode discharge TFT 9g, and a capacitor 9h provided on the base coat film 11 in each subpixel P, and a first planarization film 22a and a second planarization film 24a provided in this order on the TFTs 9a to 9g and the capacitor 9h. Here, the TFT layer 30b includes a plurality of gate lines 14g, a plurality of light emission control lines 14e, a plurality of second initialization power supply lines 19i, a plurality of source lines 21h, and a plurality of power supply lines 21i, similar to the TFT layer 30a of the first embodiment.

[0090] In addition, as shown in Figure 10, in the organic EL display panel 50b, in the non-display area N, an inverted taper structure Ra, an inverted taper structure Rb, an inverted taper structure Rc, an inner dam wall Wc, an inverted taper structure Rd, an inverted taper structure Re, an inverted taper structure Rf, and an inverted taper structure Rg are arranged in a ring shape in that order to surround the through hole H.

[0091] As shown in FIG. 10, the inverse tapered structures Ra to Rg each include a column C provided in an annular shape and a lid L provided on the column C in an annular shape.

[0092] 10, the pillar portion C includes a lower layer portion 15b provided on the first gate insulating film 13 and formed in the same layer and made of the same material as the first interlayer insulating film 15, and an upper layer portion 20b provided on the lower layer portion 15b and formed in the same layer and made of the same material as the second interlayer insulating film 20. Here, the height of the pillar portion C is set to 1.5 μm or less so that the first inorganic sealing film 41 reliably covers each of the inverted tapered structures Ra to Rg.

[0093] As shown in FIG. 10 , the lid portion L includes a base layer 22d provided on the upper layer portion 20b and formed in the same layer and made of the same material as the planarization film 22a, and a surface layer 23b provided to cover the upper surface of the base layer 22d and formed in the same layer and made of the same material as the first detour wiring 23a described later. Here, as shown in FIG. 10 , the lid portion L is provided so as to protrude in an eave-like manner by 0.5 μm or more from the column portion C toward the through-hole H side and the display region D side. Furthermore, the lid portion L is provided, for example, to a thickness of 0.5 μm or more, and at least the surface layer 23b on the surface is formed of a material having a lower dry etching rate than the first interlayer insulating film 15 and the second interlayer insulating film 20. Note that, in this embodiment, the inverted tapered structures Ra to Rf in which the lid portion L protrudes from the column portion C toward both the through-hole H side and the display region D side are illustrated. However, the lid portion L may also protrude in an eave-like manner from the column portion C toward either the through-hole H side or the display region D side.

[0094] Due to the steps created by each inverted taper structure Ra to Rg having the column portion C and lid portion L of the above-mentioned configuration, the organic EL layer 33 and the second electrode 34 are stacked in order, separated from those in the display region D, on the upper surface of the lid portion L of each inverted taper structure Ra to Rg, the upper surface of the inner dam wall Wc, and the upper surface of the first gate insulating film 13 exposed from each inverted taper structure Ra to Rg, as shown in Figure 10.

[0095] As shown in Figure 10, the inner dam wall Wc comprises a first inorganic layer 15e provided on the first gate insulating film 13 and formed in the same layer and made of the same material as the first interlayer insulating film 15, a second inorganic layer 20e provided on the first inorganic layer 15e and formed in the same layer and made of the same material as the second interlayer insulating film 20, a first resin layer 24e provided on the second inorganic layer 20e and formed in the same layer and made of the same material as the second planarization film 24a, and a second resin layer 32e provided on the first resin layer 24e and formed in the same layer and made of the same material as the edge cover 32a.

[0096] 10 , the organic EL display panel 50b is provided with first detour wiring 21n that detours around the through-hole H around the inverted tapered structure Rg in the non-display region N. Here, the first detour wiring 21n and second detour wiring 23a (described later) are electrically connected to display wiring (gate lines 14g, light-emitting control lines 14e, source lines 21h, etc.) that extends to portions corresponding to the through-hole H.

[0097] 10, the organic EL display panel 50b is provided with a second detour wiring 23a that detours around the through-hole H around the first detour wiring 21n in the non-display region N. Here, the second detour wiring 23a is formed of a transparent conductive film such as ITO, and is provided as a transparent conductive layer between the first planarization film 22a and the second planarization film 24a, for example.

[0098] Furthermore, like the organic EL display panel 50a, the organic EL display panel 50b has, in the frame region F, a first outer damming wall Wa, a second outer damming wall Wb, a first frame wiring 21j, a second frame wiring 21k, and a plurality of peripheral photospacers 32b.

[0099] In the organic EL display device of this embodiment, similarly to the organic EL display device 70 of the first embodiment, an image is displayed by the organic EL element 35 emitting light at a luminance corresponding to the drive current in each subpixel P. The organic EL display device of this embodiment is also configured to capture an image of the front side of the organic EL display panel 50b using an image sensor 60 installed on the back side of the organic EL display panel 50b.

[0100] The organic EL display device of this embodiment can be manufactured as follows.

[0101] First, in the TFT layer formation process of the manufacturing method for the organic EL display device of the first embodiment, a transparent conductive film such as an ITO film (with a thickness of about 100 nm) is formed, for example, by sputtering, on the surface of the substrate on which the planarization film (first planarization film) 22a etc. is formed, and the transparent conductive film is patterned to form the second detour wiring 23a and the surface layer 23b.

[0102] Next, an acrylic photosensitive resin film (about 2 μm thick) is applied to the substrate surface on which the second detour wiring 23 a etc. are formed, for example, by a slit coating method, and then the applied film is pre-baked, exposed to light, developed and post-baked to form a second planarization film 24 a and a TFT layer 30 b.

[0103] Furthermore, in the organic EL element layer forming step of the manufacturing method for the organic EL display device of the first embodiment, when forming the first electrode 31a, the organic EL element layer 40 is formed without forming the surface layer 31c formed in the non-display region N, and the sealing film forming step and the through-hole forming step are performed in the same manner as in the manufacturing method for the organic EL display device of the first embodiment.

[0104] As described above, in the organic EL display device of this embodiment, each of the inverted tapered structures Ra to Rg includes a pillar portion C made of a lower layer portion 15b and an upper layer portion 20b formed in the same layer and made of the same material as the first interlayer insulating film 15 and the second interlayer insulating film 20, and a lid portion L made of a base portion 22d and a surface layer 23b provided on the pillar portion C. Here, the surface layer 23b of the lid portion L is formed of a material having a lower dry etching rate than the inorganic insulating first interlayer insulating film 15 and the second interlayer insulating film 20. Therefore, in the organic EL element layer formation process, the first interlayer insulating film 15 and the second interlayer insulating film 20 exposed from the lid portion L are removed by dry etching to form the pillar portion C, and the lid portion L protrudes from the pillar portion C toward the through hole H and the display region D in an eave-like manner. Furthermore, since the thickness of the lid portion L provided on the pillar portion C is 0.5 μm or more, film peeling of the lid portion L protruding from the pillar portion C in an eave-like manner can be suppressed. This makes it possible to form the inverse tapered structures Ra to Rg in which film peeling of the lid portion L from the column portion C is suppressed, and therefore the inverse tapered structures Ra to Rg can be formed by dry etching.

[0105] Furthermore, according to the organic EL display device of this embodiment, since annular inverted tapered structures Ra-Rg are formed around the through-hole H in the non-display region N, the organic EL layer 33 and the second electrode 34 can be formed in multiple layers, separated on the display region D side and the through-hole H side. Furthermore, since the first inorganic sealing film 41 of the sealing film 45 is provided so as to cover the inverted tapered structures Ra-Rg, the intrusion of moisture into the organic EL layer 33 provided in the display region D is suppressed, deterioration of the organic EL layer 33 can be suppressed, and the reliability of the organic EL display device can be improved.

[0106] Furthermore, according to the organic EL display device of this embodiment, the inverse tapered structures Ra to Rg are formed by dry etching, so that roughness caused by wet etching on the back surface of the glass substrate 110 on which the resin substrate 10 is formed is eliminated, and poor reading of the alignment mark and poor peeling due to uneven irradiation of laser light are suppressed, thereby suppressing a decrease in the manufacturing yield of the organic EL display device.

[0107] Third Embodiment Fig. 11 shows a third embodiment of a display device according to the present invention. Fig. 11 is a cross-sectional view of a non-display area N of an organic EL display panel 50c constituting the organic EL display device of this embodiment, and corresponds to Fig. 8 described in the first embodiment.

[0108] In the first embodiment described above, an organic EL display device 70 was illustrated as having an organic EL display panel 50a provided with a lid portion L consisting of two layers, namely, a base portion 22d and a surface layer 31c. In the present embodiment, however, an organic EL display device is illustrated as having an organic EL display panel 50c provided with a lid portion L consisting of a single layer, namely, a metal layer 21m.

[0109] The organic EL display device of this embodiment includes an organic EL display panel 50c having a through hole H in the non-display area N, and an imaging element 60 installed as an electronic component on the back side of the through hole H of the organic EL display panel 50c.

[0110] The organic EL display panel 50c, like the organic EL display panel 50a of the first embodiment, includes, for example, a rectangular display area D for displaying images, and a frame area F arranged in a frame shape around the display area D.

[0111] As shown in FIG. 11, the organic EL display panel 50c includes a resin substrate 10, a TFT layer 30c provided on the resin substrate 10, an organic EL element layer 40 provided as a light-emitting element layer on the TFT layer 30c, and a sealing film 45 provided on the organic EL element layer 40.

[0112] The TFT layer 30c includes a base coat film 11 provided on a resin substrate 10, an initialization TFT 9a, a compensation TFT 9b, a writing TFT 9c, a driving TFT 9d, a power supply TFT 9e, a light emission control TFT 9f, an anode discharge TFT 9g, and a capacitor 9h provided in each subpixel P on the base coat film 11, and a planarization film 22a provided on each of the TFTs 9a to 9g and the capacitor 9h. Here, the TFT layer 30c includes a plurality of gate lines 14g, a plurality of light emission control lines 14e, a plurality of second initialization power supply lines 19i, a plurality of source lines 21h, and a plurality of power supply lines 21i, similar to the TFT layer 30a of the first embodiment.

[0113] In addition, as shown in Figure 11, in the organic EL display panel 50c, in the non-display area N, an inverted taper structure Ra, an inverted taper structure Rb, an inverted taper structure Rc, an inner dam wall Wc, an inverted taper structure Rd, an inverted taper structure Re, an inverted taper structure Rf, and an inverted taper structure Rg are arranged in a ring shape in that order to surround the through hole H.

[0114] As shown in FIG. 11, the inverse tapered structures Ra to Rg each include a column C provided in an annular shape and a lid L provided on the column C in an annular shape.

[0115] 11, the pillar portion C includes a lower layer portion 15b provided on the first gate insulating film 13 and formed in the same layer and made of the same material as the first interlayer insulating film 15, and an upper layer portion 20b provided on the lower layer portion 15b and formed in the same layer and made of the same material as the second interlayer insulating film 20. Here, the height of the pillar portion C is set to 1.5 μm or less so that the first inorganic sealing film 41 reliably covers each of the inverted tapered structures Ra to Rg.

[0116] As shown in FIG. 11 , the lid portion L is formed on the upper layer portion 20b and is composed of a metal layer 21m formed in the same layer and made of the same material as the first terminal electrode 21a. Here, as shown in FIG. 11 , the lid portion L is formed so as to protrude from the column portion C toward the through-hole H and the display area D in an eave-like shape of 0.5 μm or more. The lid portion L is formed, for example, to a thickness of 0.5 μm or more and is made of a material with a lower dry etching rate than the first interlayer insulating film 15 and the second interlayer insulating film 20. The lid portion L (metal layer 21m) is formed, for example, of a metal laminate film formed by sequentially stacking a titanium film (thickness approximately 100 nm), an aluminum film (thickness approximately 600 nm), and a titanium film (thickness approximately 100 nm). In this embodiment, inverse taper structures Ra to Rf are exemplified in which the lid portion L protrudes from the column portion C to both the through hole H side and the display area D side, but the lid portion L may also protrude in a eave-like manner from the column portion C to either the through hole H side or the display area D side.

[0117] Due to the steps created by each inverted taper structure Ra to Rg having the column portion C and lid portion L of the above configuration, the organic EL layer 33 and the second electrode 34 are stacked in order, separated from those in the display region D, on the upper surface of the lid portion L of each inverted taper structure Ra to Rg, the upper surface of the inner dam wall Wc, and the upper surface of the first gate insulating film 13 exposed from each inverted taper structure Ra to Rg, as shown in Figure 11.

[0118] As in the organic EL display panel 50a, the organic EL display panel 50c is provided with a detour wiring 21n that detours around the through-hole H around the inverse tapered structure Rg in the non-display region N, as shown in FIG.

[0119] Furthermore, like the organic EL display panel 50a, the organic EL display panel 50c has, in the frame region F, a first outer damming wall Wa, a second outer damming wall Wb, a first frame wiring 21j, a second frame wiring 21k, and a plurality of peripheral photospacers 32b.

[0120] In the organic EL display device of this embodiment, similarly to the organic EL display device 70 of the first embodiment, an image is displayed by the organic EL element 35 emitting light at a luminance corresponding to the drive current in each sub-pixel P. The organic EL display device of this embodiment is also configured to capture an image of the front side of the organic EL display panel 50c using an image sensor 60 installed on the back side of the organic EL display panel 50c.

[0121] The organic EL display device of this embodiment can be manufactured by the method for manufacturing the organic EL display device of the first embodiment described above, in which the metal layer 21m is formed when the first terminal electrode 21a, etc. is formed in the TFT layer formation process, and the surface layer 31c is not formed when the first electrode 31a is formed in the organic EL element layer formation process.

[0122] As described above, in the organic EL display device of this embodiment, each of the inverted tapered structures Ra to Rg includes a pillar portion C made of a lower layer portion 15b and an upper layer portion 20b formed in the same layer and made of the same material as the first interlayer insulating film 15 and the second interlayer insulating film 20, and a lid portion L made of a metal layer 21m provided on the pillar portion C. Here, the lid portion L is formed of a material having a lower dry etching rate than the inorganic insulating first interlayer insulating film 15 and the second interlayer insulating film 20. Therefore, in the organic EL element layer formation process, after the lid portion L is formed, the first interlayer insulating film 15 and the second interlayer insulating film 20 exposed from the lid portion L are removed by dry etching to form the pillar portion C, and the lid portion L protrudes from the pillar portion C in an eave-like manner toward the through-hole H and the display region D. Furthermore, since the thickness of the lid portion L provided on the pillar portion C is 0.5 μm or more, film peeling of the lid portion L protruding from the pillar portion C in an eave-like manner can be suppressed. This makes it possible to form the inverse tapered structures Ra to Rg in which film peeling of the lid portion L from the column portion C is suppressed, and therefore the inverse tapered structures Ra to Rg can be formed by dry etching.

[0123] Furthermore, according to the organic EL display device of this embodiment, since annular inverted tapered structures Ra-Rg are formed around the through-hole H in the non-display region N, the organic EL layer 33 and the second electrode 34 can be formed in multiple layers, separated on the display region D side and the through-hole H side. Furthermore, since the first inorganic sealing film 41 of the sealing film 45 is provided so as to cover the inverted tapered structures Ra-Rg, the intrusion of moisture into the organic EL layer 33 provided in the display region D is suppressed, deterioration of the organic EL layer 33 can be suppressed, and the reliability of the organic EL display device can be improved.

[0124] Furthermore, according to the organic EL display device of this embodiment, the inverse tapered structures Ra to Rg are formed by dry etching, so that roughness caused by wet etching on the back surface of the glass substrate 110 on which the resin substrate 10 is formed is eliminated, and poor reading of the alignment mark and poor peeling due to uneven irradiation of laser light are suppressed, thereby suppressing a decrease in the manufacturing yield of the organic EL display device.

[0125] Other Embodiments In the above-described embodiments, the organic EL layer has been exemplified as having a five-layer laminate structure of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer. However, the organic EL layer may have a three-layer laminate structure of, for example, a hole injection layer / hole transport layer, a light-emitting layer, and an electron transport layer / electron injection layer.

[0126] In addition, in each of the above embodiments, an organic EL display device in which the first electrode is an anode and the second electrode is a cathode is exemplified. However, the present invention can also be applied to an organic EL display device in which the stacked structure of the organic EL layer is reversed, and the first electrode is a cathode and the second electrode is an anode.

[0127] Furthermore, in each of the above embodiments, an organic EL display device has been described as an example of a display device. However, the present invention can be applied to a display device including a plurality of light-emitting elements driven by current, and can be applied to, for example, a display device including QLEDs (Quantum-dot light emitting diodes), which are light-emitting elements using a quantum dot-containing layer.

[0128] As described above, the present invention is useful for flexible display devices.

[0129] C Pillar portion D Display area F Frame area H Through hole L Lid portion N Non-display area P Sub-pixel Ra, Rb, Rc, Rd, Re, Rf, Rg Inverse tapered structure Wa First outer damming wall Wb Second outer damming wall Wc Inner damming wall 10 Resin substrate 15 First interlayer insulating film 20 Second interlayer insulating film 21j First frame wiring 21m Metal layer 22a Planarization film, first planarization film 22d Base portion 23a Second detour wiring (transparent conductive layer) 23b Surface layer 24a Second planarization film 30a, 30b, 30c TFT layer (thin film transistor layer) 31a First electrode 31c Surface layer 33 Organic EL layer (organic electroluminescence layer, light-emitting functional layer) 34 Second electrode 35 Organic EL element (light-emitting element) 40 Organic EL element layer (light-emitting element layer) 41 First inorganic sealing film 42 Organic sealing film 43 Second inorganic sealing film 50a, 50b, 50c Organic EL display panel 60 Imaging element (electronic component) 70 Organic EL display device

Claims

1. A display device comprising: a substrate; a thin film transistor layer provided on the substrate and including an inorganic insulating film; a light emitting element layer provided on the thin film transistor layer and having a plurality of light emitting elements, each having a first electrode, a light emitting functional layer, and a second electrode laminated in that order, corresponding to a plurality of subpixels constituting a display area; and a first inorganic sealing film provided on the light emitting element layer, wherein a non-display area is provided in an island shape within the display area, and a through hole is provided in the non-display area that penetrates the display panel in the thickness direction, and a plurality of inverted tapered structures are provided in the non-display area in an annular shape surrounding the through hole, and each of the inverted tapered structures comprises a pillar portion formed in the same layer and made of the same material as the inorganic insulating film, and a lid portion provided on the pillar portion and protruding in an eave-like shape from the pillar portion to at least one of the through hole side and the display area side, and the first inorganic sealing film is provided so as to cover each of the inverted tapered structures, wherein the lid portion has a thickness of 0.5 μm or more, and at least the surface is formed of a material whose dry etching rate is lower than that of the inorganic insulating film.

2. A display device according to claim 1, wherein the thin film transistor layer has a planarization film formed on the inorganic insulating film, and the lid portion has a base portion formed in the same layer and made of the same material as the planarization film, and a surface layer formed on the base portion and made of the same material as the first electrode.

3. A display device according to claim 1, wherein the thin film transistor layer has a first planarization film, a transparent conductive layer and a second planarization film provided in that order on the inorganic insulating film, and the lid portion has a base portion formed in the same layer and made of the same material as the first planarization film, and a surface layer provided on the base portion and formed in the same layer and made of the same material as the transparent conductive layer.

4. A display device according to claim 1, wherein the thin film transistor layer has a metal laminate film provided on the inorganic insulating film, and the lid portion is formed from the metal laminate film.

5. A display device according to claim 4, wherein the metal laminated film is formed by laminating a first titanium-based metal film, a second aluminum-based metal film, and a third titanium-based metal film in this order.

6. A display device according to any one of claims 1 to 5, wherein the inorganic insulating film is formed of a silicon oxide film, a silicon nitride film or a silicon oxynitride film.

7. A display device according to any one of claims 1 to 6, characterized in that the light-emitting functional layer and the second electrode are laminated in this order on each of the lid portions.

8. A display device according to any one of claims 1 to 7, wherein an organic sealing film is provided on the first inorganic sealing film, a frame region is provided around the display region in a frame shape, an outer damming wall is provided in the frame region in a frame shape so as to overlap with the outer peripheral edge of the organic sealing film, and an inner damming wall is provided in the non-display region in a ring shape between one of the plurality of inverted tapered structures so as to overlap with the inner peripheral edge of the organic sealing film.

9. A display device according to claim 8, wherein a second inorganic sealing film is provided on the first inorganic sealing film so as to cover the organic sealing film, and the inverted tapered structure on the through-hole side of the inner blocking wall is covered with a laminated film of the first inorganic sealing film and the second inorganic sealing film.

10. A display device according to any one of claims 1 to 9, characterized in that an electronic component is installed in the through hole.

11. The display device according to claim 10, wherein the electronic component is an image pickup element.

12. The display device according to any one of claims 1 to 11, wherein the light-emitting functional layer is an organic electroluminescence layer.

Images